Microwave generating device and radiotherapy equipment

Abstract

The embodiment of the invention provides a microwave generating device and radiotherapy equipment. The microwave generating device comprises a microwave source used for generating microwave energy; the pulse modulator is used for providing pulse power for the microwave source; and an impedance matching circuit connected between the microwave source and the pulse modulator. Wherein the impedance matching circuit comprises an instantaneous matching unit, and the instantaneous matching unit is used for performing impedance matching at the moment when the pulse modulator applies the high-voltage pulse. The instantaneous matching unit comprises a resistor element and a capacitor element which are connected in series, the first end of the instantaneous matching unit is connected with the first output end of the pulse modulator and the anode of the microwave source, and the second end of the instantaneous matching unit is connected with the second output end of the pulse modulator and the cathode of the microwave source.

Description

Technical Field

[0001] This specification relates to the technical field of medical devices, and particularly to a microwave generating device and a radiotherapy device. Background Art

[0002] As a key component in a radiotherapy device, a pulse modulator mainly provides pulsed power to a microwave source (such as a magnetron) of the radiotherapy device. The pulse modulator generally consists of two parts: a pulse unit (Pulse Unit, abbreviated as PU) and a transformer unit (Transformation Unit, abbreviated as TU). The pulse unit and the transformer unit are connected by an interconnecting wire, and the interconnecting wire forms a part of the impedance matching between the pulse modulator and the microwave source. A relatively large distance between the pulse unit and the transformer unit will cause various problems such as a decrease in the voltage rise rate and serious distortion of the pulse waveform, thereby affecting the working stability and efficiency of the radiotherapy device.

[0003] Therefore, it is desirable to provide a microwave generating device that can achieve a high voltage rise rate and improve the waveform quality even when the distance between the pulse unit and the transformer unit is relatively large. Summary of the Invention

[0004] One aspect of this specification provides a microwave generating device, including: a microwave source for generating microwave energy; a pulse modulator for providing pulsed power to the microwave source; and an impedance matching circuit connected between the microwave source and the pulse modulator, the impedance matching circuit including an instantaneous matching unit for performing impedance matching at the moment when a high-voltage pulse is applied to the pulse modulator; wherein the instantaneous matching unit includes a series-connected resistor element and capacitor element, a first end of the instantaneous matching unit is connected to a first output end of the pulse modulator and an anode of the microwave source, and a second end of the instantaneous matching unit is connected to a second output end of the pulse modulator and a cathode of the microwave source.

[0005] In some embodiments, a first end of the resistor element of the instantaneous matching unit serves as the first end of the instantaneous matching unit, a second end of the resistor element is connected to a first end of the capacitor element, and a second end of the capacitor element serves as the second end of the instantaneous matching unit.

[0006] In some embodiments, a withstand voltage value of the capacitor element is greater than an operating voltage of the microwave source; and / or the resistor element includes a plurality of serially-connected resistors, and insulating keys are provided between the plurality of serially-connected resistors.

[0007] In some embodiments, the impedance matching circuit further includes an inverse peak suppression unit, which is configured to perform inverse peak suppression after the high-voltage pulse ends; wherein, the cathode of the inverse peak suppression unit is connected to the first output end of the pulse modulator and the anode of the microwave source, and the anode of the inverse peak suppression unit is connected to the second output end of the pulse modulator and the cathode of the microwave source.

[0008] In some embodiments, the inverse peak suppression unit includes a diode element, the cathode of the diode element is the cathode of the inverse peak suppression unit, and the anode of the diode element is the anode of the inverse peak suppression unit; wherein, the first end of the resistor element is connected to the cathode of the diode element, and the second end of the capacitor element is connected to the anode of the diode element.

[0009] In some embodiments, the pulse modulator includes a transformer unit, and the transformer in the transformer unit includes: a magnetic core, a primary coil, and a secondary coil; wherein, the primary coil includes a plurality of primary windings connected in parallel, and the plurality of primary windings are insulated from each other.

[0010] In some embodiments, an insulating sleeve is provided between the magnetic core and the primary coil, and an insulating partition is provided on the insulating sleeve, and the insulating partition is used to insulate the plurality of primary windings from each other; wherein, the primary coil is wound around the outer side of the insulating sleeve, and each primary winding is wound between the insulating partitions in a single-turn foil winding manner.

[0011] In some embodiments, a lead groove is provided on the insulating partition, and lead terminals are electrically connected to both ends of each primary winding respectively, and the lead terminals can extend out of the insulating sleeve through the lead groove.

[0012] In some embodiments, the secondary coil includes two secondary windings connected in parallel, and a filament power supply is connected between the two secondary windings connected in parallel; wherein, the output end of the first secondary winding in the two secondary windings is connected to the cathode of the microwave source, and the output end of the second secondary winding is connected to the filament of the microwave source.

[0013] In some embodiments, the pulse modulator includes a switch unit and a transformer unit, and the switch unit and the transformer unit are connected by an interconnecting wire; wherein, the interconnecting wire includes a conductive conductor made by stacking multiple thin copper sheets.

[0014] In some embodiments, the conductive conductor includes a positive conductor and a negative conductor; the interconnecting wire further includes: a first insulating layer sleeved around the periphery of the positive conductor, and a second insulating layer sleeved around the periphery of the negative conductor.

[0015] In some embodiments, the interconnection line includes a ferrite core sleeved on at least one connection end of the interconnection line.

[0016] In some embodiments, the pulse modulator includes n switching units; the transformer in the transformer unit includes a magnetic core, a primary coil, and a secondary coil, the primary coil includes n primary windings connected in parallel, and the n primary windings are respectively connected to the n switching units through n interconnection lines; where n is a positive integer.

[0017] Another aspect of this specification provides a radiotherapy device, which is characterized by including: a frame, on which the microwave generating device as described above is provided. Description of the Drawings

[0018] This specification will be further described in the form of exemplary embodiments, and these exemplary embodiments will be described in detail through the drawings. These embodiments are not restrictive. In these embodiments, the same numbers represent the same structures, where:

[0019] Figure 1 is a schematic diagram of an application scenario of an exemplary radiotherapy device shown in some embodiments of this specification;

[0020] Figure 2 is a schematic diagram of the structure of an exemplary microwave generating device shown in some embodiments of this specification;

[0021] Figure 3 is a schematic diagram of the structure of an exemplary pulse generator shown in some embodiments of this specification;

[0022] Figure 4 is a schematic diagram of the structure of an exemplary transformer shown in some embodiments of this specification;

[0023] Figure 5 is a schematic diagram of the structure of an exemplary interconnection line shown in some embodiments of this specification;

[0024] Figure 6 is a schematic diagram of the structure of an exemplary interconnection line shown in some other embodiments of this specification;

[0025] Figure 7 is a schematic diagram of an equivalent circuit of an exemplary interconnection line shown in some embodiments of this specification;

[0026] Figure 8 is a schematic diagram of the structure of an exemplary impedance matching circuit shown in some embodiments of this specification;

[0027] Figure 9 is a schematic diagram of an exemplary pulse waveform shown in some embodiments of this specification. Detailed implementation manners

[0028] In order to more clearly illustrate the technical solutions of the embodiments of this specification, the following will briefly introduce the accompanying drawings required for the description of the embodiments. Obviously, the accompanying drawings in the following description are only some examples or embodiments of this specification. For those of ordinary skill in the art, without creative efforts, this specification can also be applied to other similar scenarios based on these drawings. Unless obvious from the language context or otherwise stated, the same reference numerals in the figures represent the same structure or operation.

[0029] It should be understood that the "system", "device", "unit" and / or "module" used herein is a way to distinguish different components, elements, parts, portions or assemblies at different levels. However, if other words can achieve the same purpose, the said words can be replaced by other expressions.

[0030] As shown in this specification and the claims, unless the context clearly indicates an exceptional situation, words such as "a", "an", "one" and / or "the" do not specifically refer to the singular and may also include the plural. Generally speaking, the terms "comprise" and "include" only indicate the inclusion of the steps and elements that have been clearly identified, and these steps and elements do not constitute an exclusive list. The method or device may also include other steps or elements.

[0031] Flowcharts are used in this specification to illustrate the operations performed by the system according to the embodiments of this specification. The relevant descriptions are to help better understand the control method and / or system. It should be understood that the operations before or after do not necessarily need to be executed precisely in sequence. On the contrary, they can be executed in reverse order or simultaneously. At the same time, other operations can also be added to these processes, or one or several operations can be removed from these processes.

[0032] The pulse modulator is a key component in medical devices (such as radiotherapy devices). Its main function is to provide pulsed power to high-power microwave sources (such as magnetrons or klystrons). For example, a high-voltage pulse modulator can output a series of pulsed voltages with high power, a certain repetition frequency, and a certain pulse width to the magnetron or klystron of its load. The pulse modulator generally consists of two parts: a pulse unit (Pulse Unit, abbreviated as PU) and a transformer unit (Transformation Unit, abbreviated as TU). A relatively large distance between the pulse unit and the transformer unit will cause various problems such as a decrease in the voltage rise rate and serious distortion of the pulse waveform, thus affecting the service life and working efficiency of the microwave source load.

[0033] The quality of the pulse waveform output by the pulse modulator directly affects the output RF power quality of the load it acts on, and has an obvious adverse effect on the working efficiency of the microwave source, thus affecting the working stability and efficiency of the radiotherapy equipment. For example, if the pulse waveform is distorted, it will cause the radiation dose emitted by the radiotherapy equipment to be unstable (such as fluctuating up and down) and / or the radiation position to be inaccurate (for example, irradiating to a non-target position), thus affecting the efficiency of radiotherapy.

[0034] The pulse voltage flatness and the pulse voltage rise rate (RRV: Rate of Rise) are two key indicators for evaluating the quality of the pulse waveform output by the pulse modulator. If the RRV is too low, it may cause parasitic oscillations in the microwave source load of the pulse modulator (such as a magnetron or a klystron); if the RRV is too high, it may cause the microwave source to arc frequently, thus reducing the service life of the microwave source. For example, when the pulse modulator provides pulsed high voltage to a 3.1 MW magnetron load, the RRV generally needs to reach 100 kV / μs. If it is lower than this value, it may cause parasitic oscillations in the magnetron; if it is higher than this value, it may cause the magnetron to arc frequently.

[0035] As Figure 9 (a) shows, the flat part B of the pulse voltage includes the voltage top drop (peak value and valley value) and the voltage ripple, where the pulse voltage top drop characterizes the stability of the anode voltage of the microwave source (such as a magnetron or a klystron). Taking the magnetron load as an example, too large a voltage top drop will cause the magnetron to work unstably, and the voltage ripple will cause a large change in the instantaneous power level.

[0036] The RRV of the output pulse of the pulse modulator is related to the inductance L of the interconnecting wire gen and the leakage inductance L of the main pulse transformer (such as transformer 235) σ The sum. The larger the sum, the lower the RRV; the smaller the sum, the higher the RRV. As the formula: Therefore, when the interconnecting wire connecting the pulse unit and the transformer unit is relatively long (for example, greater than 30 cm), the inductance L of the interconnecting wire gen becomes larger, increasing the delay of the pulse waveform, thus causing the RRV to decrease. For example, for the O-shaped frame, compared with the C-shaped frame, the distance between the PU and the TU is generally farther, and it is easier to have problems such as a decrease in the voltage rise rate, serious interference with the pulse waveform, and serious waveform distortion.

[0037] In addition, according to the impedance matching theory, if you want to obtain the maximum power and optimized pulse waveform on the microwave source (such as a magnetron or a klystron) load, the equivalent impedance Z of the microwave source load L needs to be equal to the internal resistance Z of the pulse modulator as the signal source m . Among them, the equivalent impedance Z of the load L and the internal resistance Z of the pulse modulatorm When they are equal, it is called impedance matching; otherwise, it is called impedance mismatch. When there is impedance mismatch, not only can the pulse modulator not provide pulse power to the microwave source with maximum efficiency, but also the pulse waveform output to the load will be distorted, and the above-mentioned pulse voltage rise rate and pulse voltage flatness indexes will also deteriorate.

[0038] In the embodiments of the present specification, a microwave generating device is provided. An impedance matching circuit is provided between the microwave source and the pulse modulator. The impedance matching circuit includes an instantaneous matching unit for performing impedance matching at the moment when the pulse modulator applies a high-voltage pulse; and an anti-peak suppression unit for performing anti-peak suppression after the high-voltage pulse ends, improving the distortion degree and flatness of the pulse waveform output by the pulse modulator to the microwave source (such as a magnetron), and improving the quality of the pulse waveform.

[0039] Figure 1 It is a schematic diagram of the application scenario of an exemplary radiotherapy device shown according to some embodiments of the present specification.

[0040] As Figure 1 shown, in some embodiments, the medical system 100 may include a radiotherapy device 110, a processing device 120, a terminal device 130, a storage device 140, and a network 150. The connections between the components in the medical system 100 may be variable. As Figure 1 shown, in some embodiments, the radiotherapy device 110 may be connected to the processing device 120 through the network 150. For example, the radiotherapy device 110 may be directly connected to the processing device 120. For another example, the storage device 140 may be directly or through the network 150 connected to the processing device 120. As an example, the terminal device 130 may be directly connected to the processing device 120 (as shown by the dashed arrow connecting the terminal device 130 and the processing device 120), or may be connected to the processing device 120 through the network 150.

[0041] The radiotherapy device, that is, the radiation therapy device, is used to perform radiation therapy on a target object or a part of it located within its detection area. In some embodiments, the radiotherapy device 110 may include a gantry 113 and a medical bed 115. The gantry 113 may be used to carry a microwave generating device (such as the microwave generating device 2000). In some embodiments, the shape of the gantry 113 may include a C shape or an O shape. In some embodiments, the microwave generating device may include a microwave source, a pulse modulator, an impedance matching circuit connected between the microwave source and the pulse modulator, etc. For more detailed content, see Figure 2 and its related descriptions. The medical bed 115 may be used to carry the target object for performing radiation therapy on the target object.

[0042] The processing device 120 may process data and / or information obtained from the radiotherapy device 110, the terminal device 130, the storage device 140, or other components of the medical system 100. In some embodiments, the processing device 120 and the radiotherapy device 110 may be integrated into one body. For example, the processing device 120 may be integrated in the radiotherapy device 110 to jointly implement the methods and / or functions described in this specification.

[0043] In some embodiments, the processing device 120 may include an input device and / or an output device. Through the input device and / or the output device, interaction with the user can be achieved (for example, displaying reconstructed images, etc.). In some embodiments, the input device and / or the output device may include a display screen, a keyboard, a mouse, a microphone, etc., or any combination thereof.

[0044] The terminal device 130 may be connected and / or communicate with the radiotherapy device 110, the processing device 120, and / or the storage device 140. For example, the terminal device 130 may obtain and display the reconstructed image from the processing device 120. In some embodiments, the terminal device 130 may include a mobile device 131, a tablet computer 132, a laptop computer 133, etc., or any combination thereof. In some embodiments, the terminal device 130 (or all or part of its functions) may be integrated in the processing device 120.

[0045] The storage device 140 may store data, instructions, and / or any other information. In some embodiments, the storage device 140 may store data obtained from the radiotherapy device 110, or the processing device 120, or the terminal device 130 (such as projection data, reconstructed images, patient information, etc.).

[0046] In some embodiments, the storage device 140 may include one or more storage components, and each storage component may be an independent device or a part of other devices. In some embodiments, the storage device 140 may include a random access memory (RAM), a read-only memory (ROM), a mass storage device, a removable memory, a volatile read-write memory, etc., or any combination thereof. Exemplarily, the mass storage device may include a magnetic disk, an optical disk, a solid-state disk, etc. The RAM may include a dynamic RAM (DRAM), a double data rate synchronous dynamic RAM (DDR SDRAM), a static RAM (SRAM), a thyristor RAM (T-RAM), and a zero-capacitance (Z-RAM), etc. The ROM may include a mask ROM (MROM), a programmable ROM (PROM), an erasable programmable ROM (PEROM), an electrically erasable programmable ROM (EEPROM), a CD-ROM, and a digital versatile disc ROM, etc. In some embodiments, the storage device 140 may be implemented on a cloud platform.

[0047] Network 150 may include any suitable network capable of facilitating information and / or data exchange. In some embodiments, at least one component of medical system 100 (e.g., radiotherapy device 110, processing device 120, terminal device 130, storage device 140) may exchange information and / or data with at least one other component in medical system 100 via network 150.

[0048] It should be noted that medical system 100 is provided for illustrative purposes only and is not intended to limit the scope of this specification. Those of ordinary skill in the art can make various modifications or changes according to the description of this specification. For example, medical system 100 may implement similar or different functions on other devices. However, these changes and modifications will not depart from the scope of this specification.

[0049] Figure 2 It is a schematic structural diagram of an exemplary microwave generating device shown in some embodiments of this specification.

[0050] As Figure 2 shown, in some embodiments, microwave generating device 2000 may include pulse modulator 200, microwave source 300, and impedance matching circuit 400 connected between microwave source 300 and pulse modulator 200.

[0051] Microwave source 300 is used to generate microwave energy. In some embodiments, microwave source 300 is a high-power microwave source, such as a magnetron or a klystron. In the following embodiments of this specification, the description will mainly take the microwave source as a magnetron as an example. It can be understood that the relevant description is only for example, and in some alternative embodiments, the magnetron can be replaced by a klystron.

[0052] Pulse modulator 200 is used to provide pulsed power to microwave source 300. In some embodiments, pulse modulator 200 may include pulse unit 220 and transformer unit 230. Among them, pulse unit 220 and transformer unit 230 may be connected by interconnecting wire 240.

[0053] Pulse unit 220 may be used to control the parameters of the pulse waveform output by the pulse modulator to the load. In some embodiments, as Figure 3 shown, pulse unit 220 may include power supply 213 and switch unit 215. One end of switch unit 215 may be connected to power supply 213, and the other end is connected to transformer unit 230 through interconnecting wire 240.

[0054] The power supply 213 can be used to convert the primary power supply into a required DC power supply or AC power supply to provide high voltage for the pulse modulator 200. The switch unit 215 can be used to determine the parameters of the output pulse of the pulse modulator. For example, by controlling the closing and opening of the switch unit 215, the energy storage unit can discharge the load (such as the microwave source 300) of the pulse modulator 200 to form an output pulse with certain voltage, power, pulse width and pulse waveform parameters.

[0055] In some embodiments, the pulse unit 220 may only include the switch unit 215. In this case, one end of the pulse unit 220 is connected to the power supply 213, and the other end is connected to the transformer unit 230 through the interconnecting wire 240.

[0056] The transformer unit 230 can be used to convert the voltage and / or current of the pulse modulator 200 into the voltage and / or current of the load. For example, the transformer unit 230 can convert the DC voltage of the pulse modulator 200 into a voltage suitable for its magnetron load. In some embodiments, the transformer unit 230 may include a transformer 235. In some embodiments, the transformer 235 can be installed in an oil tank filled with mineral transformer oil. In some embodiments, the transformer in the transformer unit 230 includes a magnetic core, a primary coil and a secondary coil, and the primary coil includes a plurality of primary windings connected in parallel. In some embodiments, the secondary coil includes two secondary windings connected in parallel, and a filament power supply is connected between the two secondary windings connected in parallel. For more details, see Figure 4 described in

[0057] In some embodiments, the interconnecting wire 240 may include a conductive conductor, an insulating layer, a shielding layer, and / or a protective layer. In some embodiments, the interconnecting wire 240 may include a ferrite magnetic core. For more details, see Figures 5 - 6 described in

[0058] The impedance matching circuit 400 can be used to compensate for the distortion of the high-voltage pulse waveform caused by the mismatch between the pulse modulator 200 and the load (such as the microwave source 300) at the moment when the high-voltage output pulse is applied. In some embodiments, the impedance matching circuit (also referred to as the RCD circuit) 400 may include an instantaneous matching unit for performing impedance matching at the moment when the high-voltage pulse is applied to the pulse modulator. In some embodiments, the impedance matching circuit 400 may further include an anti-peak suppression unit for performing anti-peak suppression after the high-voltage pulse ends. For more details, see Figure 8 described in

[0059] Figure 4 is a schematic structural diagram of an exemplary transformer shown in some embodiments of the present specification.

[0060] Such as Figure 4As shown in (a), in some embodiments, the transformer 235 may include a plurality of primary windings 410 connected in parallel, a magnetic core 420, and two secondary windings 430 connected in parallel. Among them, the plurality of primary windings 410 connected in parallel are insulated from each other to form a primary coil; the two secondary windings 430 connected in parallel form a secondary coil.

[0061] In some embodiments, as Figure 4 shown in (c), an insulating sleeve 50 is provided between the magnetic core 420 and the primary coil, and an insulating partition 60 is provided on the insulating sleeve 50. The insulating partition 60 can insulate and separate the plurality of primary windings 410 of the primary coil from each other. Among them, the primary coil is wound around the outer side surface of the insulating sleeve 50, and each primary winding 410 is wound between the insulating partitions 60 in a single-turn foil winding manner, so that the plurality of primary windings 410 are insulated from each other.

[0062] By winding each primary winding of the primary coil around the outer circumference of the insulating sleeve in a single-turn foil winding manner and spacing them through insulating partitions, the leakage inductance caused by the primary coil can be correspondingly reduced, and at the same time, the insulation requirements between the primary coil and the magnetic core can be met, thereby correspondingly improving the stability of the pulse transformer.

[0063] In some embodiments, in order to make the distance between the plurality of primary windings as small as possible to reduce the leakage inductance between the primary windings, the thickness range of the insulating partition 60 can be between 0.5 mm and 1 mm.

[0064] In some embodiments, a lead wire groove is provided on the insulating partition 60, and lead wire terminals are electrically connected to both ends of each primary winding 410 respectively, and the lead wire terminals can extend out of the insulating sleeve 50 through the lead wire groove. The metal foil of the primary winding 410 can be connected to the lead wire terminal by welding or other means. With such a setting, it is convenient to connect the winding wire groove where the primary winding extends out of the insulating sleeve to an external power supply. In some embodiments, the bottom wall of the lead wire groove extends outward to form a spacer, and the spacer is used to separate the two lead wire terminals of the primary winding. With such a setting, the leakage inductance and parasitic capacitance between the two lead wire terminals can be minimized.

[0065] In some embodiments, a filament power supply is connected between the two secondary windings 430 connected in parallel. In some embodiments, the low-voltage side of the secondary winding 430 is connected to the filament power supply. Among them, the output terminal of one of the two secondary windings (also called the first secondary winding, such as Figure 4 the secondary winding 430 on the left or right side in (a)) is connected to the cathode of the microwave source 300, and the output terminal of the other (also called the second secondary winding, such as Figure 4 the secondary winding 430 on the right or left side in (a)) is connected to the filament of the microwave source 300. In some embodiments, the number of turns of the two secondary windings 430 is the same.

[0066] With two parallel secondary windings, on the one hand, the current-carrying capacity of the transformer can be increased, and on the other hand, insulation for filament heating can be achieved.

[0067] In some embodiments, as Figure 4 shown in (a) or (b), the transformer 235 may further include a reset winding 440 for connecting to a reset power supply.

[0068] It should be noted that Figure 4 the descriptions shown in (a)-(c) and the above description regarding the transformer 235 are provided for illustrative purposes only and are not intended to limit the scope of this specification. In some embodiments, the transformer 235 may include three or more primary windings 410. In some embodiments, the transformer 235 may include two or more primary windings 410. In some embodiments, two or more of the multiple parallel-connected primary windings 410 may be connected to a switching unit 215. In some embodiments, the multiple parallel-connected primary windings 410 may be connected to the same switching unit 215. In some embodiments, two or more switching units 215 may be connected to a power supply 213. In some embodiments, each switching unit 215 may be connected to a power supply 213.

[0069] The above-mentioned transformer with multiple parallel primary windings belongs to a matrix transformer. By setting the pulse transformer (i.e., the transformer 235) in this matrix form, the leakage inductance parameter of the pulse modulator can be better reduced, thereby obtaining a better pulse waveform, providing pulse power to the microwave source load with maximum efficiency, and improving the working efficiency and reliability of the microwave source.

[0070] In some embodiments, the pulse modulator 200 may include n switching units 215, the transformer 235 includes n primary windings 410, and the n primary windings 410 may be respectively connected to the n switching units 215 through n interconnecting lines. Among them, the n switching units 215 are all connected to the output of the same charging power supply 213. For example Figure 4 as shown in (b), when the transformer 235 includes n primary windings 410, there may also be n pairs of interconnecting lines (for example, interconnecting line 1, interconnecting line 2,..., interconnecting line n), and both ends of each pair of interconnecting lines are respectively connected to a primary winding 410 and a switching unit 215. Among them, n is a positive integer. In some embodiments, two or more primary windings may be connected to the same switching unit through one interconnecting line.

[0071] Through the design of multiple groups of interconnecting lines, the inductances of the pulse modulator are paralleled, and further, the overall inductance of the pulse modulator is further reduced, so that when the pulse unit and the transformer unit are at a relatively long distance, the pulse voltage rise rate of the pulse modulator is increased.

[0072] It should be noted that the above description of the pulse modulator 200 and its various modules (e.g., the transformer 235) is provided for illustrative purposes only and is not intended to limit the scope of this specification. Those of ordinary skill in the art can make various changes and modifications based on the description of this specification. For example, multiple parallel primary windings can be connected to the switching unit through an interconnecting wire. However, these changes and modifications do not depart from the scope of this specification.

[0073] Figure 5 is a schematic structural diagram of an exemplary interconnecting wire shown in some embodiments of this specification. Among them, Figure 5 (a)-(c) all correspond to the cross-section of the interconnecting wire.

[0074] In some embodiments, the interconnecting wire 240 includes conductive conductors (such as positive conductors and / or negative conductors), and the conductive conductors can be made by stacking multiple layers of thin copper sheets. In some embodiments, the conductive conductors can be made by stacking multiple layers of flexible thin copper sheets. In some embodiments, the conductive conductors can be made by stacking multiple layers of corona-resistant thin copper sheets. For example, the conductive conductors can be formed by stacking multiple thin electrolytic copper or electrolytic tough pitch copper sheets (e.g., with a thickness less than 0.01, 0.03, or 0.05 millimeters, etc.).

[0075] In some embodiments, the interconnecting wire 240 may further include an insulating layer sleeved on the periphery of the conductive conductors. In some embodiments, the interconnecting wire 240 may further include a shielding layer sleeved on the periphery of the insulating layer, and / or a protective layer sleeved on the periphery of the shielding layer.

[0076] In some embodiments, the insulating layer can be an insulating material such as ethylene propylene rubber, cross-linked polyethylene, or polyamide-imide. Preferably, the material of the insulating layer can be polyamide-imide.

[0077] In some embodiments, for example Figure 5 (as shown in (a)), the interconnecting wire 240 may include a positive conductor 510, a negative conductor 520, a first insulating layer 530 sleeved on the periphery of the positive conductor 510, and a second insulating layer 540 sleeved on the periphery of the negative conductor 520. In some embodiments, the first insulating layer 530 can be closely adhered to the positive conductor 510 through a lamination process, and the second insulating layer 540 is closely adhered to the negative conductor 520 through a lamination process. The lamination process refers to a method of combining two or more layers of the same or different materials into a whole by heating and pressurizing with or without an adhesive, also known as the lamination molding method.

[0078] Taking the positive conductor and the first insulating layer as an example, as Figure 5As shown in (b), the first insulating layer 530 closely surrounds the positive conductor 510, and there may be a certain overlapping area P at the part where the first insulating layer 530 is joined end to end along the radial direction of the positive conductor. It can be understood that Figure 5 (b) is only an example. In some embodiments, the positive conductor and the first insulating layer (or the negative conductor and the second insulating layer) can be closely attached together in any reasonable manner, and this specification does not limit this.

[0079] By using the special tough insulating material polyamideimide with high temperature resistance and self-extinguishing arc as the insulating layer, and laminating the insulating layer with the thin copper bar to form the conductor layer, it is possible to achieve the closest fit of the conductor under the condition of ensuring insulation, and reduce the inductance of the interconnection line.

[0080] In some embodiments, the shielding layer 550 can be sleeved on the periphery of the first insulating layer 530 and the second insulating layer 540, for example Figure 5 as shown in (a). The shielding layer can be used to evenly distribute the electric field, control the potential and limit the electric field, avoid partial discharge on the surface of the insulating layer, conduct leakage current and charging current.

[0081] In some embodiments, as Figure 5 shown in (a), the interconnection line 240 further includes a protective layer 560, and the protective layer 560 is sleeved outside the shielding layer 550 to protect the interconnection line and improve its service life.

[0082] In some embodiments, each primary winding 410 in the transformer 235 can be connected to a switching unit 215 through an Figure 5 interconnection line 240 as shown in (a).

[0083] In some embodiments, as Figure 5 shown in (c), the interconnection line 240 may only include the positive conductor 510, and the first insulating layer 530 which is closely attached to the positive conductor 510 through a lamination process and is sleeved on the periphery of the positive conductor 510. In this case, the shielding layer 550 can be directly sleeved on the periphery of the first insulating layer 530 and used as the carrier of the negative current, that is, acting as the negative conductor. In some embodiments, a protective layer 560 can be sleeved outside the shielding layer 550.

[0084] Through the design method of using the shielding layer as the negative conductor, while ensuring that the interconnection line has a certain shielding function, the volume of the interconnection line can be made smaller and the weight can be made lighter.

[0085] In some embodiments, each primary winding 410 in the transformer 235 can be connected to a switching unit 215 through an Figure 5 interconnection line 240 as shown in (c).

[0086] It should be noted that the above description regarding Figure 5 is provided for illustrative purposes only and is not intended to limit the scope of this specification. Those of ordinary skill in the art can make various changes and modifications based on the description of this specification. For example, the interconnecting line 240 may not include the protective layer 560 or the shielding layer 550. However, these changes and modifications do not depart from the scope of this specification.

[0087] In some embodiments, the interconnecting line 240 may include a ferrite core sleeved on at least one of its connection ends. For example, the interconnecting line 240 may include a ferrite core fixedly connected to one end of the conductive conductor (e.g., one end connecting to the switching unit or the other end connecting to the transformer unit). Again, for example, the interconnecting line 240 may include two ferrite cores, and the two ferrite cores are respectively fixedly connected to both ends of the conductive conductor (e.g., one end connecting to the switching unit and the other end connecting to the transformer unit). In some embodiments, the shielding layer (such as the shielding layer 550) of the interconnecting line may wrap the at least one ferrite core and the conductive conductor connected to the ferrite core, and is respectively connected to the negative terminals at both ends of the interconnecting line. In some embodiments, the material of the core may include various magnetic materials such as nanocrystalline and amorphous, and this specification does not make specific limitations thereto.

[0088] Please refer to Figure 6 , Figure 6 which is a schematic structural diagram of an exemplary interconnecting line shown in some other embodiments of this specification. Among them, Figure 6 (a) shows an overall schematic diagram of the interconnecting line, and the dotted line direction corresponds to the cross-sectional direction of the interconnecting line; Figure 6 (b) shows an enlarged schematic structural diagram of the ferrite core.

[0089] Taking the example of including two ferrite cores, as Figure 6 (a) shows, both ends of the interconnecting line 240 respectively include a ferrite core 610, the two ferrite cores 610 are respectively connected to both ends of the cable 620, the two ferrite cores 610 and the cable 620 are wrapped by the shielding layer 550, and both ends of the interconnecting line 240 are respectively connected to the negative terminals (such as both ends of the negative conductor in the interconnecting line are respectively connected to the negative terminals). Among them, the cable 620 includes a conductive conductor (e.g., the positive conductor 510 and / or the negative conductor 520) and / or an insulating layer sleeved on the periphery of the conductive conductor (such as the first insulating layer 530 and / or the second insulating layer 540). For example, the two ferrite cores 610 may be respectively connected to Figure 5In the interconnecting line shown in (a), one of the ferrite cores 610 is fixedly connected to the first end of the positive conductor 510 and the first end of the negative conductor 520, and the other ferrite core 610 is fixedly connected to the second end of the positive conductor 510 and the second end of the negative conductor 520. For another example, the two ferrite cores 610 can be respectively connected to Figure 5 In the interconnecting line shown in (c), one of the ferrite cores 610 is connected to the first end of the positive conductor 510, and the other ferrite core 610 is connected to the second end of the positive conductor 510. In some embodiments, Figure 6 A protective layer (e.g., protective layer 560) can be sleeved around the periphery of the shielding layer 550 in the interconnecting line 240 shown in (a).

[0090] In some embodiments, the ferrite core 610 can be circular ring-shaped, and a part of the cable 620 (e.g., the part connected to the ferrite core) is wrapped inside the circular ring of the ferrite core 610. In some embodiments, as Figure 6 As shown in (b), the ferrite core 610 can include a core 613 and a coil 615 surrounding the core, and the core 613 is connected to one end of the conductive conductor. In some embodiments, the inductance of the interconnecting line can be changed by adjusting one or more parameter values among the length L of the ferrite core, the diameter d of the core 613, and the diameter D of the coil 615. In some embodiments, the length L of the ferrite core, the diameter d of the core 613, and the diameter D of the coil 615 can be determined based on the length, diameter, etc. of the interconnecting line. For example, the diameter d of the core 613 is greater than the diameter of the positive conductor (in this case, the cable 620 only includes the positive conductor), or greater than the sum of the diameters of the positive conductor + the first insulating layer (in this case, the cable 620 includes the positive conductor and the first insulating layer sleeved around the positive conductor), or greater than the sum of the diameters of the positive conductor + the first insulating layer + the negative conductor + the second insulating layer (in this case, the cable 620 includes the positive conductor, the first insulating layer sleeved around the positive conductor, the negative conductor, and the second insulating layer sleeved around the negative conductor).

[0091] Figure 7 is a schematic diagram of an equivalent circuit of an exemplary interconnecting line shown in some embodiments of this specification. Among them, Figure 7 (a) is the equivalent circuit of the interconnecting line without a ferrite core, Figure 7 (b) is the equivalent circuit of the interconnecting line with a ferrite core.

[0092] The impedance of the interconnecting line generated after installing the ferrite core can be composed of the inductance of the interconnecting line itself before adding the ferrite core and the equivalent impedance generated by the installed ferrite core in series. For example Figure 7As shown in (b), the impedance of the interconnecting wire with a ferrite core can be equivalent to the inductance Le of the wire without a ferrite core, the parallel circuit of the resistance Rs and inductance Ls of the ferrite core, and the series circuit of the resistance Rm, inductance Lm, and capacitance Cm. For example, the impedance Z of the interconnecting wire with a ferrite core can be calculated by the following formula:

[0093] Among them, Le represents the self-inductance of the wire wrapped by the ferrite core, and jwLe represents the reactance generated by the self-inductance of the wire without a ferrite core. represents the load effect generated by the rotational motion of the ferrite core spin. represents the load effect generated by the motion of the domain wall.

[0094] When using the interconnecting wire with a ferrite core, when the output pulse voltage of the pulse modulator gradually increases and the current I flowing through the interconnecting wire increases, the magnetization intensity H increases, the hysteresis loop of the ferrite core transforms from non-saturation to saturation, the magnetic permeability u decreases, and from the fact that the inductance of the interconnecting wire is proportional to the magnetic permeability u, the inductance L decreases. The characteristic impedance Z of the interconnecting wire is proportional to √(L / C), and the wave velocity is inversely proportional to √(L*C). Therefore, the wave velocity becomes faster, the pulse front is compressed, and the RRV level of the pulse modulator is improved.

[0095] In some embodiments, each primary winding 410 in the transformer 235 can be connected to a switch unit 215 through an interconnecting wire Figure 6 as shown in (a).

[0096] It should be noted that the above description regarding Figure 6 is provided only for illustrative purposes and is not intended to limit the scope of this specification. Those of ordinary skill in the art can make various changes and modifications according to the description of this specification. For example, the interconnecting wire only includes Figure 6 the ferrite core 610 on the left or right side of (a). However, these changes and modifications do not depart from the scope of this specification.

[0097] In some embodiments, Figure 5 and Figure 6 the interconnecting wires shown in can be two different structural types of interconnecting wires respectively. For example, the transformer 235 can be connected to the switch unit 215 through the interconnecting wire Figure 5 shown in (a) or Figure 5 (c), or can also be through Figure 6The interconnecting line shown in (a) is connected to the switching unit 215. In some embodiments, two or more of the multiple primary windings 410 in the transformer 235 can be connected to the corresponding switching units 215 through interconnecting lines of the same or different structural types. For example, the primary winding 1 can be connected to the corresponding switching unit 1 through the interconnecting line shown in Figure 5 (a), the primary winding 2 is connected to the corresponding switching unit 2 through the interconnecting line shown in Figure 5 (c), and the primary winding 3 is connected to the corresponding switching unit 3 through the interconnecting line shown in Figure 6 (a). As another example, the primary winding 1 and the primary winding 2 are respectively connected to the switching unit 1 and the switching unit 2 through the interconnecting lines shown in Figure 5 (a), and the primary winding 3 is connected to the corresponding switching unit 3 through the interconnecting line shown in Figure 5 (c). As another example, the primary winding 1, the primary winding 2, and the primary winding 3 are respectively connected to the switching unit 1, the switching unit 2, and the switching unit 3 through the interconnecting lines shown in Figure 5 (a), or Figure 5 (c), or Figure 6 (a).

[0098] In some embodiments, Figure 5 and Figure 6 the interconnecting lines shown in can be two parts of one type of interconnecting line. For example, the cable 620 of the interconnecting line can include Figure 5 the positive conductor 510 shown in (a), the negative conductor 520, the first insulating layer 530 closely attached to the positive conductor, the second insulating layer 540 closely attached to the negative conductor, Figure 6 the ferrite cores 610 connected to both ends of the cable 620 shown in (a), and the shielding layer 550 that wraps the cable 620 and the two ferrite cores 610. As another example, the cable 620 of the interconnecting line can include Figure 5 the positive conductor 510 shown in (c), the first insulating layer 530 closely attached to the positive conductor, Figure 6 the ferrite cores 610 connected to both ends of the cable 620 shown in (a), the shielding layer 550 that wraps the cable 620 and the two ferrite cores 610 and acts as a negative carrier, and the protective layer 560.

[0099] Figure 8 is a schematic structural diagram of an exemplary impedance matching circuit shown in some embodiments of the present specification.

[0100] As Figure 8As shown, in some embodiments, the impedance matching circuit 400 may include an instantaneous matching unit 810. The first end 813 of the instantaneous matching unit 810 is connected to the first output end 201 of the pulse modulator 200 and the anode 310 of the microwave source 300. The second end 815 of the instantaneous matching unit 810 is connected to the second output end 202 of the pulse modulator 200 and the cathode 320 of the microwave source 300.

[0101] In some embodiments, the instantaneous matching unit 810 includes a series-connected resistor element and capacitor element. The first end a of the resistor element serves as the first end 813 of the instantaneous matching unit 810. The second end b of the resistor element is connected to the first end a of the capacitor element. The second end b of the capacitor element serves as the second end 815 of the instantaneous matching unit 810. That is, the first end a of the resistor element is connected to the anode 310 of the high-power microwave source 300 (e.g., magnetron or klystron), and the second end b of the capacitor element is connected to the cathode 320 of the high-power microwave source 300.

[0102] The capacitor element in the instantaneous matching unit 810 is equivalent to a switch S. At the moment when the high-voltage pulse is applied, the capacitor is short-circuited, equivalent to the switch S being closed, and only the resistor element exists between the pulse modulator 200 and the microwave source 300 for impedance matching. During the flat period of the high-voltage pulse, due to the DC-blocking effect of the capacitor element, the capacitor is open-circuited, equivalent to the switch S being opened, and the impedance matching circuit 810 does not affect the pulse waveform during the pulse, and at this time, the impedance of the pulse transformer 200 and the microwave source 300 is matched under normal operating conditions.

[0103] At the moment when the high-voltage pulse output by the pulse modulator is applied to the cathode of the magnetron, since the conduction voltage threshold of the magnetron has not been reached, the magnetron does not oscillate and is equivalent to an open circuit at this time. The impedance of the primary coil of the transformer 235 depends to a certain extent on the impedance reflected by the secondary coil. When the circuit of the secondary coil is disconnected, the impedance of the primary coil will be very large. Therefore, at the moment when the high-voltage pulse is applied, the impedance of the primary coil of the transformer is very large. Since the maximum voltage in any closed circuit is generated across the maximum impedance, at the moment when the high-voltage pulse is applied for the first time, because the magnetron does not oscillate and does not reflect any load, a large voltage will be generated across the primary coil of the transformer 235. If this situation is allowed to exist, it will cause the magnetron to spark immediately. By performing impedance matching through the instantaneous matching unit at the moment when the high-voltage pulse is applied by the pulse modulator, the above situation can be avoided, thereby avoiding magnetron sparking.

[0104] In some embodiments, the breakdown voltage value of the capacitor element is greater than the operating voltage of the microwave source. For example, if the operating voltage of the magnetron is 52 kV, the breakdown voltage value of the capacitor element should satisfy being greater than 52 kV. For example, when using a 750 pF capacitor element, its breakdown voltage value is about 60 kV, which is greater than 52 kV.

[0105] In some embodiments, the resistive element may include a plurality of resistors connected in series, and an insulating key is provided between the plurality of resistors connected in series. For example, the resistive element may use four 12-ohm resistors connected in series, with a total resistance value of 48 ohms, and an insulating key is provided between each resistor. In some embodiments, insulating keys are provided at both ends of the resistive element, that is, insulating keys are provided at both ends of the two outermost resistors among the plurality of resistors connected in series. In some embodiments, the voltage withstand of the resistive element needs to be greater than the operating voltage of the microwave source.

[0106] As Figure 8 shown, in some embodiments, the impedance matching circuit 400 may further include an anti-peak suppression unit 820. The first end 823 (cathode) of the anti-peak suppression unit 820 is connected to the first output end 201 of the pulse modulator 200 and the anode 310 of the microwave source 300, and the second end 825 (anode) of the anti-peak suppression unit 820 is connected to the second output end 202 of the pulse modulator 200 and the cathode 320 of the microwave source 300. The other end 330 of the cathode of the microwave source 300 is grounded. Among them, the anti-peak suppression unit 820 and the instantaneous matching unit 810 are connected in parallel. As Figure 8 shown in

[0107] In some embodiments, the anti-peak suppression unit 820 includes a diode element. The cathode of the diode element is the cathode of the anti-peak suppression unit 820 (i.e., the first end 823), and the anode of the diode element is the anode of the anti-peak suppression unit 820 (i.e., the second end 825). Among them, the first end a of the resistive element in the instantaneous matching unit 810 is connected to the cathode of the diode element in the anti-peak suppression unit 820, and the second end b of the capacitive element in the instantaneous matching unit 810 is connected to the anode of the diode element.

[0108] After the high-voltage pulse ends, the capacitive element and the microwave source discharge to prolong the trailing-edge fall time of the pulse voltage, thereby causing a relatively large anti-peak voltage. At this time, the diode element can perform anti-peak suppression.

[0109] By providing an RCD circuit between the transformer unit and the microwave source (such as a magnetron, a klystron), the waveform distortion of the high-voltage pulse caused by the mismatch between the pulse modulator and the load instantaneously when the high-voltage pulse is output can be compensated, thereby improving the waveform distortion problem.

[0110] Figure 9 is a schematic diagram of an exemplary pulse waveform shown according to some embodiments of the present specification. Among them, Figure 9 (a) is the voltage pulse waveform and current pulse waveform corresponding to before impedance matching,Figure 9 (b) shows the corresponding voltage pulse waveform and current pulse waveform after impedance matching. Please refer to Figure 9 (a) for the pulse waveform shown. Since the magnetron is approximately open circuit and has a very high resistance before starting to oscillate, there is a serious positive mismatch between the pulse modulator and the magnetron, resulting in an overshoot peak (as shown in the dotted circle in the figure) at the front edge of the voltage pulse of the magnetron; the current pulse also experiences overshoot. In addition, within the entire pulse flat top section, the current pulse waveform oscillates and distorts significantly (as shown in the dotted rectangle in the figure), unable to reach a stable state. Even after the magnetron is turned off and the current drops to zero, there is still a long-time oscillation (as shown in the solid rectangle in the figure). Please refer to Figure 9 (b). After using the Figure 8 impedance matching circuit shown, the overshoot peak at the front edge of the magnetron pulse (as shown in the dotted circle in the figure) and the overshoot of the current are suppressed. Within the entire pulse flat top section, the oscillation amplitude of the current decreases and finally stabilizes (as shown in the dotted rectangle in the figure). After the magnetron is turned off and the current drops to zero, the oscillation no longer exists (as shown in the solid rectangle in the figure), obtaining a pulse waveform with better quality.

[0111] In addition, according to Figure 9 (a) and (b), it can be seen that after impedance matching using the impedance matching circuit 400, compared with before matching, at the same magnetron voltage, the current of the magnetron is greater, that is, a greater output power is obtained on the load side of the magnetron, and the impedance matching performance is optimized.

[0112] The beneficial effects that the embodiments of this specification may bring include but are not limited to: (1) By using copper sheets stacked as conductors and closely laminating the conductors and the insulating layer, the inductance of the interconnections can be reduced, the delay of the pulse waveform can be decreased, the rise rate of the pulse waveform output to the microwave source load can be increased, the parasitic oscillation output by the microwave source (such as a magnetron) can be reduced, and the RF quality and working efficiency of the microwave source output can be improved; (2) By designing the transformer in the form of multiple parallel primary windings, the inductance of the pulse modulator can be further reduced, so that even if the PU and TU are connected by long interconnections, a high voltage rise rate of the microwave source can still be achieved, thereby improving the operation reliability of the microwave source; (3) By connecting an RCD circuit to the output end of the load to achieve impedance matching between the pulse modulator and the load, the waveform distortion caused by the long distance between the PU and TU or other layouts can be removed, the waveform quality can be improved, thereby improving the RF power quality of the microwave source output and enhancing the performance of the particle acceleration device; (4) By designing a shielding layer outside the interconnections, the interference from the long interconnections and the RF interference emitted by the magnetron can be suppressed, thereby improving the operation reliability of the particle acceleration device system; (5) By setting an RCD circuit between the microwave source and the pulse modulator, the problem of high-voltage pulse waveform distortion caused by the mismatch between the pulse modulator and the load at the moment of outputting a high-voltage pulse can be compensated, the distortion degree and flatness of the pulse waveform output by the pulse modulator to the microwave source (such as a magnetron) can be improved, and the quality of the pulse waveform can be enhanced.

[0113] The basic concepts have been described above. Obviously, for those skilled in the art, the above detailed disclosure is only an example and does not constitute a limitation to this specification. Although not explicitly stated here, those skilled in the art may make various modifications, improvements, and corrections to this specification. Such modifications, improvements, and corrections are proposed in this specification, so such modifications, improvements, and corrections still fall within the spirit and scope of the exemplary embodiments of this specification.

[0114] Meanwhile, this specification uses specific terms to describe the embodiments of this specification. Such as "one embodiment", "an embodiment", and / or "some embodiments" mean a certain feature, structure, or characteristic related to at least one embodiment of this specification. Therefore, it should be emphasized and noted that the "one embodiment" or "an embodiment" or "an alternative embodiment" mentioned twice or more at different positions in this specification does not necessarily refer to the same embodiment. In addition, certain features, structures, or characteristics in one or more embodiments of this specification can be appropriately combined.

[0115] In addition, unless clearly stated in the claims, the order of the processing elements and sequences, the use of numerical and alphabetical characters, or the use of other names described in this specification are not used to limit the order of the processes and methods in this specification. Although some currently useful embodiments of the invention are discussed through various examples in the above disclosure, it should be understood that such details are for illustrative purposes only. The appended claims are not limited to the disclosed embodiments. On the contrary, the claims are intended to cover all modifications and equivalent combinations that conform to the essence and scope of the embodiments of this specification. For example, although the system components described above can be implemented by hardware devices, they can also be implemented only through software solutions, such as installing the described system on existing servers or mobile devices.

[0116] Similarly, it should be noted that, in order to simplify the presentation of the disclosure in this specification and thus help the understanding of one or more embodiments of the invention, in the previous description of the embodiments of this specification, sometimes multiple features are merged into one embodiment, drawing, or description thereof. However, this method of disclosure does not mean that the features required by the subject matter of this specification are more than those mentioned in the claims. In fact, the features of the embodiments are fewer than all the features of the individual embodiments disclosed above.

[0117] In some embodiments, numbers are used to describe the components and the quantity of attributes. It should be understood that such numbers used in the description of the embodiments are modified by the modifiers "about", "approximate", or "substantially" in some examples. Unless otherwise stated, "about", "approximate", or "substantially" indicate that the said numbers allow a variation of ±20%. Accordingly, in some embodiments, the numerical parameters used in the specification and claims are approximate values, and such approximate values may change according to the characteristics required by individual embodiments. In some embodiments, the numerical parameters should consider the specified significant digits and adopt the method of retaining the general number of digits. Although the numerical ranges and parameters used in some embodiments of this specification to confirm the breadth of their scope are approximate values, in specific embodiments, such numerical settings are made as precise as possible within the feasible range.

[0118] For each patent, patent application, patent application publication, and other materials cited in this specification, such as articles, books, specifications, publications, documents, etc., their entire contents are hereby incorporated into this specification as references. Except for the application history documents that are inconsistent with or conflict with the content of this specification, and also except for the documents that limit the broadest scope of the claims of this specification (currently or subsequently appended to this specification). It should be noted that if there are any inconsistencies or conflicts between the descriptions, definitions, and / or uses of terms in the supplementary materials of this specification and the content described in this specification, the descriptions, definitions, and / or uses of terms in this specification shall prevail.

[0119] Finally, it should be understood that the embodiments described in this specification are only used to illustrate the principles of the embodiments of this specification. Other variations may also fall within the scope of this specification. Therefore, by way of example and not limitation, alternative configurations of the embodiments of this specification may be regarded as consistent with the teachings of this specification. Accordingly, the embodiments of this specification are not limited to the embodiments explicitly presented and described in this specification.

Claims

1. A microwave generating device, characterized in that, Comprising: A microwave source for generating microwave energy; A pulse modulator for providing pulsed power to the microwave source; And An impedance matching circuit connected between the microwave source and the pulse modulator, the impedance matching circuit including an instantaneous matching unit for performing impedance matching at the moment when the pulse modulator applies a high-voltage pulse; Wherein, the instantaneous matching unit includes a series-connected resistor element and capacitor element, a first end of the instantaneous matching unit is connected to a first output end of the pulse modulator and an anode of the microwave source, and a second end of the instantaneous matching unit is connected to a second output end of the pulse modulator and a cathode of the microwave source.

2. The microwave generating device according to claim 1, characterized in that, A first end of the resistor element of the instantaneous matching unit serves as the first end of the instantaneous matching unit, a second end of the resistor element is connected to a first end of the capacitor element, and a second end of the capacitor element serves as the second end of the instantaneous matching unit.

3. The microwave generating device according to claim 1, wherein The withstand voltage value of the capacitor element is greater than the operating voltage of the microwave source; and / or The resistor element includes a plurality of series-connected resistors, and insulating keys are provided between the plurality of series-connected resistors.

4. The microwave generating device according to claim 1, characterized in that, The impedance matching circuit further includes an inverse peak suppression unit for performing inverse peak suppression after the high-voltage pulse ends; Wherein, a cathode of the inverse peak suppression unit is connected to a first output end of the pulse modulator and an anode of the microwave source, and an anode of the inverse peak suppression unit is connected to a second output end of the pulse modulator and a cathode of the microwave source.

5. The microwave generating device according to claim 4, characterized in that, The inverse peak suppression unit includes a diode element, a cathode of the diode element serves as the cathode of the inverse peak suppression unit, and an anode of the diode element serves as the anode of the inverse peak suppression unit; Wherein, a first end of the resistor element is connected to the cathode of the diode element, and a second end of the capacitor element is connected to the anode of the diode element.

6. The microwave generating device according to claim 1, characterized in that, The pulse modulator includes a transformer unit, and the transformer in the transformer unit includes: A magnetic core, a primary coil and a secondary coil; wherein, the primary coil includes a plurality of primary windings connected in parallel, and the plurality of primary windings are insulated from each other.

7. The microwave generating device according to claim 6, wherein An insulating sleeve is provided between the magnetic core and the primary coil, and an insulating partition is provided on the insulating sleeve for insulating and separating the plurality of primary windings from each other; Wherein, the primary coil is wound around an outer side surface of the insulating sleeve, and each primary winding is wound in a single-turn foil winding manner between the insulating partitions.

8. The microwave generating device according to claim 7, characterized in that, Lead grooves are provided on the insulating partition, and lead terminals are electrically connected to both ends of each primary winding respectively, and the lead terminals can extend out of the insulating sleeve through the lead grooves.

9. The microwave generating device according to claim 6, characterized in that, The secondary coil includes two secondary windings connected in parallel, and a filament power supply is connected between the two parallel-connected secondary windings; Wherein, an output end of a first secondary winding among the two secondary windings is connected to a cathode of the microwave source, and an output end of a second secondary winding is connected to a filament of the microwave source.

10. The microwave generating device according to claim 1, characterized in that, The pulse modulator includes a switch unit and a transformer unit, and the switch unit and the transformer unit are connected by an interconnecting wire; Among them, the interconnecting line includes a conductive conductor made by stacking multiple layers of thin copper sheets.

11. The microwave generating device according to claim 10, characterized in that, The conductive conductor includes a positive conductor and a negative conductor; The interconnecting line further includes: a first insulating layer sleeved around the periphery of the positive conductor, and a second insulating layer sleeved around the periphery of the negative conductor.

12. The microwave generating device according to claim 10, characterized in that, The interconnecting line includes a ferrite core sleeved at at least one connection end of the interconnecting line.

13. The microwave generating device according to claim 10, wherein the pulse modulator includes n switching units; The transformer in the transformer unit includes a magnetic core, a primary coil, and a secondary coil. The primary coil includes n parallel primary windings, and the n primary windings are respectively connected to the n switching units through n interconnecting lines; where n is a positive integer.

14. A radiotherapy device, characterized in that, including: a frame, on which the microwave generating device according to any one of claims 1-13 is provided.

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