Processing furnace, processing equipment, etching method and processing method

Abstract

The invention provides a processing furnace, processing equipment, an etching method and a processing method. The processing furnace comprises a first furnace tube, a second furnace tube, a third furnace tube and a fourth furnace tube, the second furnace tube is arranged on the outer side of the first furnace tube in a sleeving manner, a second cavity is formed between the second furnace tube and the first furnace tube, and the second cavity is communicated with the first cavity; one end of the first air inlet pipe is positioned outside the second furnace tube, and the other end is positioned in the first cavity; one end of the second air inlet pipe is positioned outside the second furnace tube, and the other end is positioned in the second cavity; one end of the exhaust pipe is located outside the second furnace tube, and the other end of the exhaust pipe is located in the second cavity. According to the processing furnace, the etching effect on the film layer attached to the interior of the processing furnace can be improved.

Description

Technical Field

[0001] This application relates to the technical field of chip processing, and in particular, to a processing furnace, processing equipment, etching method, and processing method. Background Art

[0002] A processing furnace is an important device for growing a film layer on the surface of a wafer. The processing furnace generally includes a furnace tube, an inlet pipe, and an exhaust pipe fixed to the furnace tube. When growing a film layer, the wafer can be placed inside the furnace tube, and a gas is introduced into the furnace tube through the inlet pipe. The gas undergoes a chemical reaction and a film layer grows on the surface of the wafer. At the same time, a film layer also grows on the inner wall of the furnace tube. When the film layer in the furnace tube reaches a certain thickness, it will fall off, thus affecting the growth of the film layer on the wafer. Therefore, it is necessary to periodically etch the film layer on the furnace tube.

[0003] In the related art, when etching the film layer, an etching gas is introduced into the inlet pipe, and the etching gas reacts chemically with the film layer on the surface of the furnace tube and volatilizes. However, this etching method often does not etch cleanly enough. Therefore, multiple etchings are required. After multiple etchings, the surface of the furnace tube may be etched, thus affecting the service life of the furnace tube. Summary of the Invention

[0004] In order to solve the above technical problems, this application provides a processing furnace, processing equipment, etching method, and processing method, which can improve the etching effect on the film layer attached inside the processing furnace.

[0005] In a first aspect of this application, a processing furnace is provided, including: a first furnace tube, a second furnace tube, a first inlet pipe, a second inlet pipe, and an exhaust pipe. A first cavity is formed inside the first furnace tube. The second furnace tube is sleeved outside the first furnace tube, and a second cavity is formed between the second furnace tube and the first furnace tube. The second cavity communicates with the first cavity. One end of the first inlet pipe is located outside the second furnace tube, and the other end is located inside the first cavity. One end of the second inlet pipe is located outside the second furnace tube, and the other end is located inside the second cavity. One end of the exhaust pipe is located outside the second furnace tube, and the other end is located inside the second cavity.

[0006] The processing furnace can be applied to processing equipment. In addition to the processing furnace, the processing equipment may further include a gas supply system. One ends of the first inlet pipe and the second inlet pipe of the processing furnace are both located outside the second furnace tube and connected to the gas supply system. In the process of the wafer film layer growth process, the wafer can be fixed inside the first cavity, and the gas supply system can introduce a third gas into the first inlet pipe. The third gas can undergo a chemical reaction and generate SiN. The SiN can adhere to the surface of the wafer and form a film layer containing SiN. A film layer containing SiN is also formed on the inner wall of the first furnace tube, the outer wall of the first furnace tube, and the inner wall of the second furnace tube.

[0007] In the process of film layer etching, the gas supply system can introduce a first gas into a first inlet pipe and a second gas into a second inlet pipe. The compositions of the first gas and the second gas can be the same. For example, both can include F2 and N2. F2 is used to chemically react with SiN to generate volatile SiF, and N2 is used to dilute F2.

[0008] Since the other end of the first inlet pipe is located in the first cavity, and the first cavity is formed by the interior of the first furnace tube, the first inlet pipe can introduce the first gas into the first cavity, and the first gas can etch the film layer attached to the inner wall of the first furnace tube. The first cavity is in communication with the second cavity. Therefore, the remaining first gas after etching can flow from the first cavity to the second cavity through the first cavity. The second cavity is located between the first furnace tube and the second furnace tube. Thus, the remaining first gas can etch the film layers attached to the outer wall of the first furnace tube and the inner wall of the second furnace tube. The F2 concentration of this remaining first gas is relatively low. Therefore, it cannot thoroughly etch the film layers attached to the outer wall of the first furnace tube and the inner wall of the second furnace tube.

[0009] The second inlet pipe can introduce the second gas supplied by the gas supply system into the second cavity. The second gas can etch the film layers attached to the outer wall of the first furnace tube and the inner wall of the second furnace tube. The remaining first gas and the second gas in the second cavity are both discharged through the exhaust pipe. That is to say, the remaining first gas after reacting with the film layer on the inner wall of the first furnace tube introduced from the first cavity and the second gas introduced from the second inlet pipe can jointly etch the film layers attached to the outer wall of the first furnace tube and the inner wall of the second furnace tube, thereby increasing the F2 concentration and further improving the etching effect. Therefore, in this application, the processing furnace can achieve the etching effect with one etching, thus reducing the surface etching of the first furnace tube and the second furnace tube caused by multiple etchings, which may affect the service life of the processing furnace.

[0010] Based on this, the second inlet pipe includes a connected first conduit and a second conduit. One end of the first conduit is located outside the second furnace tube and the other end is located in the second cavity. The second conduit is located in the second cavity, and through holes are provided on the pipe wall of the second conduit. In this way, after the gas supply system introduces the second gas into the first conduit, the second gas can flow from the first conduit to the second conduit and flow into the second cavity from the through holes on the pipe wall of the second conduit, thereby etching the film layers attached to the outer wall of the first furnace tube and the inner wall of the second furnace tube. The remaining second gas after etching can be discharged through the exhaust pipe, thereby improving the etching effect on the film layer.

[0011] Regarding the number of through holes, in a possible implementation, there is one through hole provided on the tube wall of the second conduit, and the dimension of the through hole along the length direction of the second conduit is relatively large. For example, the dimension of the through hole along the length direction can be more than half of the length of the second conduit.

[0012] In another possible implementation, there are multiple through holes provided on the tube wall of the second conduit. In this way, the second gas can flow out from the multiple through holes, and the second gas flowing out from each through hole can etch different regions of the film layer on the outer wall of the first furnace tube and the inner wall of the second furnace tube, thereby being able to further improve the etching effect on the film layer. On this basis, the multiple through holes are evenly distributed on the tube wall of the second conduit, thereby being able to improve the etching uniformity.

[0013] Regarding the arrangement mode of the multiple through holes, in a possible implementation, the multiple through holes are arranged along the length direction of the second conduit. In this way, it is simple and convenient to manufacture, and the cost is relatively low. In another possible implementation, the multiple through holes can be arranged in two columns.

[0014] Based on this, the center distance range between two adjacent through holes is 2 cm - 3 cm. Exemplarily, 2 cm, 2.5 cm or 3 cm. If the center distance between two adjacent through holes is less than 2 cm, this will result in the through holes being set relatively densely, thus causing a large deformation of the second inlet pipe when manufacturing the through holes. If the center distance between two adjacent through holes is greater than 3 cm, this will result in the center distance between two adjacent through holes being too large, thus causing an insufficient etching of the area on the outer wall of the first furnace tube and the inner wall of the second furnace tube corresponding to the through hole. Therefore, when the center distance range between two adjacent through holes is 2 cm - 3 cm, it can reduce the large deformation of the second inlet pipe while improving the etching effect on the film layer.

[0015] Moreover, the dimension range of the through hole along the length direction of the second conduit is 6 mm - 10 mm. Exemplarily, 6 mm, 8 mm or 10 mm. If the dimension of the through hole along the length direction of the second conduit is less than 6 mm, it will result in a relatively small flow rate of the second gas introduced from the second through hole, thus causing an insufficient etching of the film layer on the outer wall of the first furnace tube and the inner wall of the second furnace tube within a certain period of time. If the dimension of the through hole along the length direction of the second conduit is greater than 10 mm, this will cause a large deformation of the second inlet pipe when manufacturing the through hole. Therefore, when the dimension range of the through hole along the length direction of the second conduit is 6 mm - 10 mm, it can improve the etching effect on the film layer while reducing the large deformation of the second inlet pipe.

[0016] The first furnace tube can be a tubular structure with openings at both ends, and the second furnace tube can be a tubular structure with both ends closed. In this way, when the second furnace tube is sleeved outside the first furnace tube, the first cavity in the first furnace tube can communicate with the second cavity between the first furnace tube and the second furnace tube through the openings at both ends of the first furnace tube.

[0017] In some embodiments, compared with the first end of the second furnace tube, both the first conduit and the exhaust pipe are closer to the second end of the second furnace tube. That is, the first conduit is closer to the second end of the second furnace tube, and the exhaust pipe is also closer to the second end of the second furnace tube. That is, the first conduit and the exhaust pipe are located at the same end of the second furnace tube. The processing furnace may further include a flange, which can be sleeved and fixed on the outer surface of the second furnace tube, and both the first conduit and the exhaust pipe can be fixed on the second furnace tube through the flange. When both the first conduit and the exhaust pipe are closer to the second end, it is convenient to connect the first conduit and the exhaust pipe to the same flange, thereby reducing the number of flanges and further simplifying the structure of the processing furnace.

[0018] Moreover, the distance between the first conduit and the first end is less than the distance between the exhaust pipe and the first end, and the second conduit extends towards the first end. In this way, the second gas entering the second conduit from the first conduit can flow into the second cavity through the through holes. And since the second conduit extends towards the first end, some of the through holes are close to the first end. Thus, part of the second gas can flow into the area near the first end in the second cavity through the through holes close to the first end, and after chemical reaction with the film layers on the outer wall of the first furnace tube and the inner wall of the second furnace tube, it flows from the area near the first end to the exhaust pipe near the second end and is discharged through the exhaust pipe. Thus, the second gas can fully react with the film layers on the outer wall of the first furnace tube and the inner wall of the second furnace tube, thereby improving the etching effect.

[0019] In some other embodiments, the first conduit is closer to the first end of the second furnace tube, and the exhaust pipe is closer to the second end of the second furnace tube.

[0020] In addition, compared with the first end of the second furnace tube, both the first conduit and the first intake pipe are closer to the second end of the second furnace tube. Moreover, the first intake pipe may include a connected third conduit and a fourth conduit. The third conduit is arranged parallel to the first conduit, and the fourth conduit is arranged parallel to the second conduit. The distance between the first conduit and the first end of the second furnace tube is less than the distance between the third conduit and the first end. Both the first conduit and the first intake pipe can be connected to the flange. When both the first conduit and the first intake pipe are closer to the second end of the second furnace tube, it is convenient to connect the first conduit and the first intake pipe to the same flange, thereby reducing the number of flanges and further simplifying the structure of the processing furnace.

[0021] In some embodiments, the projection of the second intake pipe on the cross-section of the second furnace tube and the projection of the exhaust pipe on the cross-section do not overlap. Here, the cross-section is perpendicular to the length direction of the second furnace tube. After the second gas enters the second cavity through the second conduit of the second intake pipe and etches the film layer, it is discharged from the exhaust pipe. Since their projections on the cross-section do not overlap, the second gas can be divided into two paths and flow in two opposite directions along the circumference and be discharged from the exhaust pipe. During the flow, it can fully chemically react with the film layers on the outer wall of the first furnace tube and the inner wall of the second furnace tube. Thus, the etching of the film layers on the outer wall of the first furnace tube and the inner wall of the second furnace tube is more thorough.

[0022] Further, the projection of the second intake pipe on the cross-section and the projection of the exhaust pipe on the cross-section are respectively located on opposite sides of the second furnace tube. In this way, the second gas introduced into the second cavity from the second conduit can be divided into two paths, flow in two opposite directions along the circumference and be discharged from the exhaust pipe, and the path lengths of these two paths of the second gas are basically the same, thereby improving the etching uniformity.

[0023] Moreover, the projection of the first intake pipe on the cross-section and the projection of the second intake pipe on the cross-section do not overlap, and the projection of the first intake pipe on the cross-section and the projection of the exhaust pipe on the cross-section do not overlap. In this way, the first gas entering the first cavity from the first intake pipe and the second gas entering the second cavity from the second intake pipe enter at different positions along the circumferential direction of the second furnace tube, thereby further improving the etching effect.

[0024] In some embodiments, the ratio range of the length of the second conduit to the length of the second furnace tube is 0.7 - 0.9. That is to say, the second conduit is provided in the area of 70% - 90% of the length of the second furnace tube. Thus, the second gas in the second conduit can flow into the second cavity through each through-hole, so that the areas of the second furnace tube to be etched corresponding to the second gas flowing out of each through-hole are as identical as possible, thereby further improving the etching effect.

[0025] In the second aspect of the present application, a processing device is further provided, including a gas supply system and the processing furnace of any of the above embodiments. The first intake pipe and the second intake pipe of the processing furnace are respectively connected to the gas supply system. The gas supply system can introduce the first gas into the first intake pipe, and the gas supply system can introduce the second gas into the second intake pipe. The processing device can achieve all the effects of the processing furnace.

[0026] Based on this, the gas supply system includes a gas tank, and a first intake pipe and a second intake pipe are connected to the same gas tank. Thus, the first gas and the second gas are the same. Exemplarily, the composition and concentration of the first gas are respectively the same as those of the second gas. After the first gas reacts with the film layer on the inner wall of the first furnace tube in the first cavity, the remaining first gas flows from the first cavity into the second cavity. At this time, the F2 concentration of the remaining first gas is relatively low. In this way, the total concentration of F2 in the second gas and the remaining first gas is higher than the F2 concentration entering the first intake pipe. However, since the second gas and the remaining first gas are located in the second cavity, and the other end of the exhaust pipe is also located in the second cavity, that is to say, the second gas and the remaining first gas are closer to the exhaust pipe. In this way, the flow rate of the second gas and the remaining first gas is relatively fast. Thus, the etching rate of the second gas and the remaining first gas on the film layers on the outer wall of the first furnace tube and the inner wall of the second furnace tube is basically the same as the etching rate of the first gas on the film layer on the inner wall of the first furnace tube, thereby making the etching more uniform. In addition, since the first intake pipe and the second intake pipe are connected to the same gas tank, there is no need to prepare two different gas tanks, thus simplifying the structure of the processing equipment and reducing the cost of the processing equipment.

[0027] In the third aspect of the present application, there is also provided an etching method, which is applied to the processing furnace of any of the above embodiments. The etching method includes: the first intake pipe introduces the first gas into the first cavity; the first gas etches the film layer attached to the inner wall of the first furnace tube, and flows from the first cavity into the second cavity, and etches the film layer attached to the outer wall of the first furnace tube and the film layer attached to the inner wall of the second furnace tube; the second intake pipe introduces the second gas into the second cavity; the second gas etches the film layer attached to the outer wall of the first furnace tube and the film layer attached to the inner wall of the second furnace tube; the exhaust pipe discharges the remaining first gas and second gas after etching from the second cavity. The etching method can achieve all the effects of the processing furnace.

[0028] In the fourth aspect of the present application, there is also provided a processing method, which is applied to the processing furnace of any of the above embodiments. The processing method includes: the first intake pipe introduces a third gas into the first cavity, and a wafer is fixed in the first cavity; the third gas undergoes a chemical reaction and forms a film layer on the wafer, and the remaining third gas after the chemical reaction flows from the first cavity into the second cavity; the exhaust pipe discharges the remaining third gas from the second cavity. The processing method can achieve all the effects of the processing furnace. Description of the Drawings

[0029] To more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the description of the embodiments of the present application will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0030] Figure 1 Structural schematic diagram of a processing furnace in an embodiment of the present application;

[0031] Figure 2 Structural schematic diagram of a processing device in another embodiment of the present application;

[0032] Figure 3 is Figure 2 side view of;

[0033] Figure 4 is Figure 2 cross-sectional schematic diagram of the processing furnace in;

[0034] Figure 5 is Figure 2 structural schematic diagram of a second air inlet pipe in;

[0035] Figure 6 Another structural schematic diagram of the second air inlet pipe;

[0036] Figure 7 Flow schematic diagram of an etching method;

[0037] Figure 8 Flow schematic diagram of a processing method.

[0038] Icon: 100 - processing device; 1 - processing furnace; 2 - gas supply system; 201 - gas tank; 10 - first furnace tube; 11 - first cavity; 20 - second furnace tube; 21 - second cavity; 22 - first end; 23 - second end; 30 - first air inlet pipe; 31 - third conduit; 32 - fourth conduit; 40 - exhaust pipe; 50 - second air inlet pipe; 51 - first conduit; 52 - second conduit; 521 - through hole; 60 - flange; 70 - air inlet pipe. Detailed implementation manners

[0039] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are some, rather than all, of the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of the present application.

[0040] As used herein, the term "and / or" is merely a description of the relationship between associated objects, indicating that there can be three relationships. For example, A and / or B can represent three situations: A alone, A and B existing simultaneously, and B alone, where A and B can be singular or plural. The character " / " generally indicates that the associated objects before and after are in an "or" relationship. "At least one (item)" means one or more, and "a plurality" means two or more. "At least one of the following (items)" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, at least one of a, b, or c can represent: a, b, c, "a and b", "a and c", "b and c", or "a and b and c", where a, b, c can be single or multiple.

[0041] The terms "first", "second", etc. in the description and claims of the embodiments of this application are used to distinguish different objects, rather than to describe a specific order of the objects. For example, the first target object and the second target object, etc., are used to distinguish different target objects, rather than to describe a specific order of the target objects.

[0042] Words such as "connected" and "linked" are used to express the intercommunication or interaction between different components, and can include being directly connected or indirectly connected through other components. In addition, the terms "comprising" and "having" and any of their variations are intended to cover non-exclusive inclusion. For example, a method, system, product, or device comprising a series of steps or units does not necessarily have to be limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products, or devices. Terms such as "up", "down", "left", and "right" are only used with respect to the orientation of the components in the drawings. These directional terms are relative concepts, and they are used for relative description and clarification, and can change accordingly with the change in the orientation of the components placed in the drawings.

[0043] In the embodiments of this application, words such as "exemplary" or "for example" are used to give examples, illustrations, or explanations. Any embodiment or design solution described as "exemplary" or "for example" in the embodiments of this application should not be construed as being more preferred or having more advantages than other embodiments or design solutions. Rather, the use of words such as "exemplary" or "for example" is intended to present the relevant concepts in a specific manner.

[0044] In the description of the embodiments of this application, unless otherwise specified, "a plurality" means two or more. For example, a plurality of processing units means two or more processing units; a plurality of systems means two or more systems.

[0045] In the process of chip manufacturing, the wafer film layer growth process is an indispensable part, and the processing furnace 1 is an important device required in the process of wafer film layer growth. In one embodiment, as Figure 1 shown, the processing furnace 1 includes a first furnace tube 10, a second furnace tube 20, an intake pipe 70, and an exhaust pipe 40. The materials of the first furnace tube 10 and the second furnace tube 20 may both include quartz. A first cavity 11 is formed inside the first furnace tube 10. The second furnace tube 20 is sleeved outside the first furnace tube 10, and a second cavity 21 is formed between the second furnace tube 20 and the first furnace tube 10. The second cavity 21 communicates with the first cavity 11. One end of the intake pipe 70 is located outside the second furnace tube 20, and the other end of the intake pipe 70 is located inside the first cavity 11. One end of the exhaust pipe 40 is located outside the second furnace tube 20, and the other end of the exhaust pipe 40 is located inside the second cavity 21 between the first furnace tube 10 and the second furnace tube 20.

[0046] In the process of film layer growth, the wafer can be placed in the first cavity 11 of the first furnace tube 10, and gas is introduced into the first cavity 11 through the intake pipe 70. The gas undergoes a chemical reaction and a film layer grows on the surface of the wafer. At the same time, a film layer b1 will also grow on the inner wall of the first furnace tube 10. The remaining gas after the chemical reaction will flow from the first cavity 11 to the second cavity 21 and be discharged from the exhaust pipe 40. When the remaining gas passes through the second cavity 21, a chemical reaction will also occur, and a film layer b2 will be formed on the outer wall of the first furnace tube 10 and a film layer b3 will be formed on the inner wall of the second furnace tube 20. When the film layers b1, b2, and b3 reach a certain thickness, they will fall off, thus affecting the film layer growth of the wafer. Therefore, it is necessary to etch the film layers b1, b2, and b3 regularly.

[0047] In the process of film layer etching, etching gas can be introduced into the first cavity 11 through the intake pipe 70. The etching gas may include F2 and N2. F2 is used to chemically react with SiN to generate volatile SiF, and N2 is used to dilute F2. The etching gas chemically reacts with the film layer b1 on the inner wall of the first furnace tube 10 and volatilizes. The remaining etching gas after the chemical reaction flows from the first cavity 11 into the second cavity 21, chemically reacts with the film layer b2 on the outer wall of the first furnace tube 10 and the film layer b3 on the inner wall of the second furnace tube 20, and is discharged from the exhaust pipe 40. However, since the remaining etching gas has chemically reacted with the film layer b1 on the inner wall of the first furnace tube 10 before flowing into the second cavity 21, the concentration of F2 in the remaining etching gas after the chemical reaction is relatively low, and the etching ability is weakened. As a result, the film layers b2 on the outer wall of the first furnace tube 10 and the film layer b3 on the inner wall of the second furnace tube 20 are not etched thoroughly enough, and the film layer b2 remains on the outer wall of the first furnace tube 10 and the film layer b3 remains on the inner wall of the second furnace tube 20.

[0048] In order to etch the remaining film layers b2 and b3 completely, secondary etching or multiple etching is usually carried out. For example, etching gas is continuously introduced into the first cavity 11 through the intake pipe 70 until the film layer b2 on the outer wall of the first furnace tube 10 and the film layer b3 on the inner wall of the second furnace tube 20 are etched completely. However, after the etching gas enters the processing furnace 1, it can chemically react with the film layer b1 on the inner wall of the first furnace tube 10. That is to say, the F2 concentration of the etching gas that chemically reacts with the film layer b1 on the inner wall of the first furnace tube 10 is relatively high. After multiple etching operations, part of the quartz material on the inner wall of the first furnace tube 10 may be etched away, resulting in damage to the first furnace tube 10 and further affecting the service life of the processing furnace 1. In addition, if part of the quartz material on the inner wall of the first furnace tube 10 is etched away, the adhesion on the inner wall of the first furnace tube 10 will be affected. Usually, after growing the film layer a fixed number of times or for a fixed duration, a film layer etching process is carried out. If the adhesion on the inner wall of the first furnace tube 10 decreases, it may cause the film layer b2 on the inner wall of the first furnace tube 10 to fall off before the time for the film layer etching process arrives, thus affecting the growth of the wafer film layer.

[0049] Based on this, as Figure 2 shown, this embodiment provides a processing device 100, which can be applied to the wafer film layer growth process. The processing device 100 includes a gas supply system 2, a heating module ( Figure 2 not shown in the figure), a processing furnace 1, and a controller ( Figure 2 not shown in the figure). The gas supply system 2 is used to introduce gas into the processing furnace 1. The heating module is used to heat the processing furnace 1. In this way, during the process of growing the film layer on the wafer, the wafer can grow the film layer at a certain temperature, which is beneficial to the growth of the film layer. The controller can be electrically connected to the heating module and the gas supply system 2, and is used to control the opening and closing of the heating module and the gas supply system 2.

[0050] As Figure 2 and Figure 4 shown, the processing furnace 1 includes: a first furnace tube 10, a second furnace tube 20, a first intake pipe 30, a second intake pipe 50, and an exhaust pipe 40. The first furnace tube 10 can be a tubular structure with openings at both ends, and a first cavity 11 is formed inside the first furnace tube 10. The first furnace tube 10 can be a quartz furnace tube, that is, the material of the first furnace tube 10 can include quartz.

[0051] As Figure 2 shown, the second furnace tube 20 can be a tubular structure with both ends closed, and one end of the second furnace tube 20 is a side wall that can be opened and closed. In this way, when it is necessary to grow a film layer on the wafer, the side wall that can be opened and closed can be opened, and the wafer can be fixed in the first cavity 11 of the first furnace tube 10.

[0052] As Figure 2As shown, the second furnace tube 20 can be sleeved outside the first furnace tube 10, and a second cavity 21 can be formed between the first furnace tube 10 and the second furnace tube 20. The first cavity 11 in the first furnace tube 10 can communicate with the second cavity 21 between the first furnace tube 10 and the second furnace tube 20 through the openings at both ends of the first furnace tube 10. The second furnace tube 20 can be a quartz furnace tube, that is, the material of the second furnace tube 20 can include quartz.

[0053] As Figure 3 shown, the first intake pipe 30 penetrates and is fixed on the second furnace tube 20. One end of the first intake pipe 30 is located outside the second furnace tube 20 and is connected to the gas supply system 2, and the other end of the first intake pipe 30 is located in the first cavity 11 of the first furnace tube 10. Exemplarily, the first intake pipe 30 can include a connected third conduit 31 and a fourth conduit 32. One end of the third conduit 31 is located outside the second furnace tube 20, and the other end is located in the first cavity 11. The fourth conduit 32 is located in the first cavity 11, and the third conduit 31 is perpendicular to the fourth conduit 32. Thus, during the process of wafer film layer growth, the gas supply system 2 can introduce a third gas into the first intake pipe 30. The third gas includes dichlorosilane (DCS) and ammonia (NH3). The molecular formula of dichlorosilane is H2SiCl2, and the two can undergo a chemical reaction to generate SiN. During the process of furnace tube film layer etching, the gas supply system 2 can introduce a first gas into the first intake pipe 30. The first gas can be an etching gas. Specifically, the first gas can include F2 and N2. F2 is used to chemically react with the SiN film layer to generate volatile SiF, and N2 is used to dilute F2.

[0054] As Figure 2 shown, the exhaust pipe 40 penetrates and is fixed on the second furnace tube 20. One end of the exhaust pipe 40 is located outside the second furnace tube 20, and the other end of the exhaust pipe 40 is located in the second cavity 21 between the first furnace tube 10 and the second furnace tube 20. Thus, the exhaust pipe 40 can discharge the gas located in the second cavity 21. Moreover, in order to increase the exhaust speed, the cross-sectional area of the exhaust pipe 40 can be larger than the cross-sectional area of the first intake pipe 30.

[0055] As Figure 2 shown, compared with one end of the second furnace tube 20, the first intake pipe 30 and the exhaust pipe 40 are closer to the second end 23 of the second furnace tube 20. That is to say, the first intake pipe 30 and the exhaust pipe 40 are located at the same end of the second furnace tube 20.

[0056] As Figure 2As shown, during the process of growing the wafer film layer, the wafer can be fixed in the first cavity 11. The gas supply system 2 can introduce a third gas into the first intake pipe 30. The third gas can undergo a chemical reaction and generate SiN. Since both the first intake pipe 30 and the exhaust pipe 40 are close to the second end 23 of the second furnace tube 20, the third gas can enter the first cavity 11 from a position close to the second end 23 and flow towards the first end 22. During the flow, a film layer containing SiN can be formed on the surface of the wafer in the first cavity 11. At the same time, a film layer b1 containing SiN is also formed on the inner wall of the first furnace tube 10. Then, the remaining third gas after the reaction enters the second cavity 21 from a position close to the first end 22, and flows from a position close to the first end 22 to a position close to the second end 23 in the second cavity 21, and is discharged from the exhaust pipe 40. During the flow in the second cavity 21, a film layer b2 containing SiN is formed on the outer wall of the first furnace tube 10 and a film layer b3 containing SiN is also formed on the inner wall of the second furnace tube 20.

[0057] As Figure 2 shown, the second intake pipe 50 penetrates and is fixed on the second furnace tube 20. One end of the second intake pipe 50 is located outside the second furnace tube 20 and is connected to the gas supply system 2. In this way, the gas supply system 2 can introduce a second gas into the second intake pipe 50. The second gas can be an etching gas, and the second gas can include F2 and N2. F2 is used to chemically react with the SiN film layer to generate volatile SiF, and N2 is used to dilute F2. The other end of the second intake pipe 50 is located in the second cavity 21 between the first furnace tube 10 and the second furnace tube 20.

[0058] During the process of etching the film layer, the gas supply system 2 can introduce a first gas into the first intake pipe 30 and a second gas into the second intake pipe 50. Since the other end of the first intake pipe 30 is located in the first cavity 11, and the first cavity 11 is formed by the inside of the first furnace tube 10, the first intake pipe 30 can introduce the first gas into the first cavity 11, and the first gas can etch the film layer b1 attached to the inner wall of the first furnace tube 10. And the first cavity 11 communicates with the second cavity 21. Therefore, the remaining first gas after etching can flow through the first cavity 11 to the second cavity 21. The second cavity 21 is located between the first furnace tube 10 and the second furnace tube 20. Thus, the remaining first gas can etch the film layer b2 attached to the outer wall of the first furnace tube 10 and the film layer b3 attached to the inner wall of the second furnace tube 20. The F2 concentration of the remaining first gas is relatively low. Therefore, it cannot thoroughly etch the film layer b2 attached to the outer wall of the first furnace tube 10 and the film layer b3 attached to the inner wall of the second furnace tube 20.

[0059] The second intake pipe 50 can introduce the second gas introduced by the gas supply system 2 into the second cavity 21. The second gas can etch the film layer b2 attached to the outer wall of the first furnace tube 10 and the film layer b3 attached to the inner wall of the second furnace tube 20. The remaining first gas and second gas in the second cavity 21 are both discharged through the exhaust pipe 40. That is to say, the remaining first gas after reacting with the film layer b1 on the inner wall of the first furnace tube 10 introduced from the first cavity 11 and the second gas introduced from the second intake pipe 50 can jointly etch the film layer b2 attached to the outer wall of the first furnace tube 10 and the film layer b3 attached to the inner wall of the second furnace tube 20, thereby increasing the concentration of F2 and further improving the etching effect. Therefore, the present application can achieve the etching effect with one etching of the processing furnace 1, thereby reducing the surface etching of the first furnace tube 10 and the second furnace tube 20 caused by multiple etching, which affects the service life of the processing furnace 1.

[0060] The first gas and the second gas can be the same. Exemplarily, the composition and concentration of the first gas are respectively the same as those of the second gas. Here, the concentration can refer to the concentration of F2. Based on this, as Figure 2 shown, the gas supply system 2 includes a gas tank 201, and the first intake pipe 30 and the second intake pipe 50 are connected to the same gas tank 201. After the first gas reacts with the film layer b1 on the inner wall of the first furnace tube 10 in the first cavity 11, the remaining first gas flows from the first cavity 11 into the second cavity 21. At this time, the F2 concentration of the remaining first gas is relatively low. In this way, the total F2 concentration of the second gas and the remaining first gas is higher than the F2 concentration entering the first intake pipe 30. However, since the second gas and the remaining first gas are located in the second cavity 21, and the other end of the exhaust pipe 40 is also located in the second cavity 21, that is to say, the second gas and the remaining first gas are closer to the exhaust pipe 40. In this way, the flow rate of the second gas and the remaining first gas is relatively fast. Thus, the etching rate of the second gas and the remaining first gas on the film layer b2 on the outer wall of the first furnace tube 10 and the film layer b3 on the inner wall of the second furnace tube 20 is basically the same as the etching rate of the first gas on the film layer b1 on the inner wall of the first furnace tube 10, thereby making the etching more uniform. In addition, since the first intake pipe 30 and the second intake pipe 50 are connected to the same gas tank 201, there is no need to prepare two different gas tanks 201, thereby simplifying the structure of the processing equipment 100 and reducing the cost of the processing equipment 100.

[0061] As Figure 2 shown, the second intake pipe 50 includes a connected first conduit 51 and a second conduit 52. The first conduit 51 penetrates and is fixed on the second furnace tube 20. One end of the first conduit 51 is located outside the second furnace tube 20, and the other end of the first conduit 51 is located in the second cavity 21.

[0062] AsFigure 2 As shown, the second conduit 52 may be located within the second cavity 21. Moreover, in one possible implementation, as Figure 5 shown, the second conduit 52 may extend from the first conduit 51 towards the first end 22. That is to say, the first conduit 51 is fixed to one end of the second conduit 52, and the second intake pipe 50 as a whole may be in an "L" shape. In another possible implementation, as Figure 6 shown, the second conduit 52 may extend from the first conduit 51 towards the first end 22 and the second end 23 respectively. That is to say, the first conduit 51 is fixed to the middle position of the second conduit 52, and the second intake pipe 50 as a whole may be in a "T" shape.

[0063] There is an included angle a between the length direction of the first conduit 51 and the length direction of the second conduit 52. Exemplarily, in this embodiment, as Figure 5 shown, the included angle a between the length direction of the first conduit 51 and the length direction of the second conduit 52 may be a right angle. In other embodiments, the included angle a between the length direction of the first conduit 51 and the length direction of the second conduit 52 may also be an acute angle or an obtuse angle.

[0064] As Figure 5 shown, through holes 521 are provided on the tube wall of the second conduit 52. Thus, as Figure 2 shown, after the gas supply system 2 introduces the second gas into the first conduit 51, the second gas can flow through the first conduit 51 to the second conduit 52, and flow through the through holes 521 on the tube wall of the second conduit 52 to the second cavity 21, so as to etch the film layers on the outer wall of the first furnace tube 10 and the inner wall of the second furnace tube 20. The remaining second gas after etching can be discharged through the exhaust pipe 40, thereby improving the etching effect on the film layers b1, b2, and b3.

[0065] Regarding the number of the through holes 521, in one possible implementation, one through hole 521 is provided on the tube wall of the second conduit 52, and the dimension of the through hole 521 along the length direction of the second conduit 52 is relatively large. For example, the dimension of the through hole 521 along the length direction may be more than half of the length of the second conduit 52.

[0066] In another possible implementation, as Figure 5 shown, a plurality of through holes 521 are provided on the tube wall of the second conduit 52. Thus, as Figure 2 shown, the second gas can flow out from the plurality of through holes 521, and the second gas flowing out from each through hole 521 can etch different regions of the film layers on the outer wall of the first furnace tube 10 and the inner wall of the second furnace tube 20, thereby further improving the etching effect on the film layers. On this basis, the plurality of through holes 521 are evenly distributed on the tube wall of the second conduit 52, thereby improving the etching uniformity.

[0067] When a plurality of through holes 521 are provided on the tube wall of the second conduit 52, with regard to the arrangement of the plurality of through holes 521, in one possible implementation manner, as Figure 5 shown, the plurality of through holes 521 are arranged along the length direction of the second conduit 52. In this way, the manufacturing is simple and convenient, and the cost is relatively low. In another possible implementation manner, the plurality of through holes 521 can be arranged in two columns.

[0068] As Figure 5 shown, the center distance L1 between two adjacent through holes 521 ranges from 2 cm to 3 cm. Exemplarily, 2 cm, 2.5 cm or 3 cm. If the center distance L1 between two adjacent through holes 521 is less than 2 cm, this will result in a relatively dense arrangement of the through holes 521, thereby causing a large deformation of the second intake pipe 50 when manufacturing the through holes 521. If the center distance L1 between two adjacent through holes 521 is greater than 3 cm, this will cause the center distance L1 between two adjacent through holes 521 to be too large, thereby resulting in an insufficient etching of the areas to be etched on the outer wall of the first furnace tube 10 and the inner wall of the second furnace tube 20 corresponding to the through hole 521. Therefore, when the center distance L1 between two adjacent through holes 521 ranges from 2 cm to 3 cm, it can reduce the large deformation of the second intake pipe 50 while improving the etching effect on the film layer.

[0069] Moreover, the dimension L2 of the through hole 521 along the length direction of the second conduit 52 ranges from 6 mm to 10 mm. Exemplarily, 6 mm, 8 mm or 10 mm. If the dimension L2 of the through hole 521 along the length direction of the second conduit 52 is less than 6 mm, it will result in a relatively small flow rate of the second gas introduced into the second through hole 521, thereby insufficiently etching the film layer on the outer wall of the first furnace tube 10 and the inner wall of the second furnace tube 20 within a certain period of time. If the dimension L2 of the through hole 521 along the length direction of the second conduit 52 is greater than 10 mm, this will cause a large deformation of the second intake pipe 50 when manufacturing the through hole 521. Therefore, when the dimension L2 of the through hole 521 along the length direction of the second conduit 52 ranges from 6 mm to 10 mm, it can improve the etching effect on the film layer while reducing the large deformation of the second intake pipe 50.

[0070] As Figure 2As shown, compared with the first end 22 of the second furnace tube 20, both the first conduit 51 and the exhaust pipe 40 are closer to the second end 23 of the second furnace tube 20. That is, the first conduit 51 is closer to the second end 23 of the second furnace tube 20, and the exhaust pipe 40 is also closer to the second end 23 of the second furnace tube 20. That is to say, the first conduit 51 and the exhaust pipe 40 are located at the same end of the second furnace tube 20. The processing furnace 1 may further include a flange 60. The flange 60 can be sleeved and fixed on the outer surface of the second furnace tube 20, and both the first conduit 51 and the exhaust pipe 40 can be fixed on the second furnace tube 20 through the flange 60. When both the first conduit 51 and the exhaust pipe 40 are closer to the second end 23, it is convenient to connect the first conduit 51 and the exhaust pipe 40 to the same flange 60, thereby reducing the number of flanges 60 and further simplifying the structure of the processing furnace 1.

[0071] Moreover, as Figure 2 shown, the distance between the first conduit 51 and the first end 22 is less than the distance between the exhaust pipe 40 and the first end 22, and the second conduit 52 extends towards the first end 22. The distance between the first conduit 51 and the first end 22 may refer to the distance between the side of the first conduit 51 facing the first end 22 and the first end 22. Similarly, the distance between the exhaust pipe 40 and the first end 22 may refer to the distance between the side of the exhaust pipe 40 facing the first end 22 and the first end 22. In this way, the second gas entering the second conduit 52 from the first conduit 51 can flow through the through holes 521 into the second cavity 21. And since the second conduit 52 extends towards the first end 22, some of the through holes 521 are close to the first end 22. Thus, some of the second gas can flow through the through holes 521 close to the first end 22 into the area close to the first end 22 in the second cavity 21, and after chemically reacting with the film layers on the outer wall of the first furnace tube 10 and the inner wall of the second furnace tube 20, it flows from the area close to the first end 22 to the exhaust pipe 40 close to the second end 23 and is discharged through the exhaust pipe 40. Thus, the second gas can fully react with the film layers on the outer wall of the first furnace tube 10 and the inner wall of the second furnace tube 20, thereby improving the etching effect.

[0072] In other embodiments, the first conduit 51 is closer to the first end 22 of the second furnace tube 20, and the exhaust pipe 40 is closer to the second end 23 of the second furnace tube 20.

[0073] In addition, as Figure 2As shown, compared with the first end 22 of the second furnace tube 20, the first conduit 51 and the first intake pipe 30 are also closer to the second end 23 of the second furnace tube 20. Moreover, the distance between the first conduit 51 and the first end 22 of the second furnace tube 20 is less than the distance between the third conduit 31 and the first end 22. The distance between the third conduit 31 and the first end 22 may refer to the distance between the side of the third conduit 31 facing the first end 22 and the first end 22. Both the first conduit 51 and the first intake pipe 30 can be connected to the flange 60. When both the first conduit 51 and the first intake pipe 30 are closer to the second end 23 of the second furnace tube 20, it is convenient to connect the first conduit 51 and the first intake pipe 30 to the same flange 60, thereby reducing the number of flanges 60 and further simplifying the structure of the processing furnace 1.

[0074] As Figure 4 shown, the projection of the second intake pipe 50 on the cross-section of the second furnace tube 20 and the projection of the exhaust pipe 40 on the cross-section do not overlap. The cross-section is perpendicular to the length direction of the second furnace tube 20. After the second gas enters the second cavity 21 from the second conduit 52 of the second intake pipe 50 and etches the film layers b2 and b3, it is discharged from the exhaust pipe 40. Since their projections on the cross-section do not overlap, the second gas needs to be divided into two paths and flow in two opposite directions along the circumference and be discharged from the exhaust pipe 40. During the flow process, it can fully react chemically with the film layer b2 on the outer wall of the first furnace tube 10 and the film layer b3 on the inner wall of the second furnace tube 20. Thus, the etching of the film layer b2 on the outer wall of the first furnace tube 10 and the film layer b3 on the inner wall of the second furnace tube 20 is more thorough.

[0075] Furthermore, as Figure 4 shown, the projection of the second intake pipe 50 on the cross-section and the projection of the exhaust pipe 40 on the cross-section are respectively located on opposite sides of the second furnace tube 20. In this way, the second gas introduced into the second cavity 21 from the second conduit 52 can be divided into two paths, flow in two opposite directions along the circumference and be discharged from the exhaust pipe 40, and the path lengths of these two paths of the second gas are basically the same, thereby improving the etching uniformity.

[0076] Moreover, as Figure 4 shown, the projection of the first intake pipe 30 on the cross-section and the projection of the second intake pipe 50 on the cross-section do not overlap, and the projection of the first intake pipe 30 on the cross-section and the projection of the exhaust pipe 40 on the cross-section do not overlap. In this way, the first gas entering the first cavity 11 from the first intake pipe 30 and the second gas entering the second cavity 21 from the second intake pipe 50 enter at different positions along the circumferential direction of the second furnace tube 20, thereby further improving the etching effect.

[0077] As Figure 2As shown, the ratio range between the length L3 of the second conduit 52 and the length L4 of the second furnace tube 20 is 0.7 - 0.9. For example, 0.7, 0.8, or 0.9. That is to say, the second conduit 52 is provided in the region of 70% - 90% of the length L3 of the second furnace tube 20. Thus, the second gas in the second conduit 52 can flow through each through-hole 521 into the second cavity 21, so that the regions of the second furnace tube 20 to be etched corresponding to the second gas flowing out of each through-hole 521 are as identical as possible, thereby further improving the etching effect.

[0078] The embodiment of the present application further provides an etching method, which is applied to Figure 2 the processing furnace 1 shown. As Figure 7 shown, the etching method includes:

[0079] S61, the first intake pipe introduces the first gas into the first cavity.

[0080] The first gas can be introduced into the first intake pipe 30 by using Figure 2 the gas supply system 2 shown. The first gas can be introduced into the first cavity 11 through the first intake pipe 30.

[0081] S62, the first gas etches the film layer attached to the inner wall of the first furnace tube, and flows from the first cavity to the second cavity, and etches the film layer attached to the outer wall of the first furnace tube and the film layer attached to the inner wall of the second furnace tube.

[0082] As Figure 2 shown, the first gas can etch the film layer b1 attached to the inner wall of the first furnace tube 10. Since the first cavity 11 communicates with the second cavity 21, the remaining first gas after etching can flow from the first cavity 11 to the second cavity 21, and the remaining first gas etches the film layer b2 attached to the outer wall of the first furnace tube 10 and the film layer b3 attached to the inner wall of the second furnace tube 20.

[0083] S63, the second intake pipe introduces the second gas into the second cavity.

[0084] The second gas can be introduced into the second intake pipe 50 by using Figure 2 the gas supply system 2 shown. The second gas can be introduced into the second cavity 21 through the second intake pipe 50.

[0085] S64, the second gas etches the film layer attached to the outer wall of the first furnace tube and the film layer attached to the inner wall of the second furnace tube.

[0086] As Figure 2As shown, after the second gas enters the second cavity 21, it can etch the film layer b2 attached to the outer wall of the first furnace tube 10 and the film layer b3 attached to the inner wall of the second furnace tube 20. That is to say, the first gas remaining after reacting with the film layer b1 on the inner wall of the first furnace tube 10 introduced from the first cavity 11 and the second gas introduced from the second intake pipe 50 can jointly etch the film layer b2 attached to the outer wall of the first furnace tube 10 and the film layer b3 attached to the inner wall of the second furnace tube 20, thereby increasing the concentration of F2 and further improving the etching effect. Therefore, in this application, the processing furnace 1 can achieve the etching effect with one etching, thus reducing the surface etching of the first furnace tube 10 and the second furnace tube 20 caused by multiple etchings, which may affect the service life of the processing furnace 1.

[0087] S4. The exhaust pipe discharges the remaining first gas and second gas after etching from the second cavity.

[0088] As Figure 2 shown, the remaining first gas and second gas after etching can be discharged from the second cavity 21 through the exhaust pipe 40.

[0089] The embodiment of this application also provides a processing method applied to Figure 2 the processing furnace 1 as Figure 8 shown. As

[0090] S71. The first intake pipe introduces a third gas into the first cavity.

[0091] A workpiece stage is provided in the first cavity 11 inside the first furnace tube 10, and the wafer can be fixed on the workpiece stage.

[0092] S72. The third gas undergoes a chemical reaction and forms a film layer on the wafer, and the remaining third gas after the chemical reaction flows from the first cavity 11 to the second cavity 21.

[0093] The third gas can undergo a chemical reaction and generate SiN. As Figure 2 shown, since both the first intake pipe 30 and the exhaust pipe 40 are close to the second end 23 of the second furnace tube 20, the third gas can enter the first cavity 11 from a position close to the second end 23 and flow towards the first end 22. During the flow, a film layer containing SiN can be formed on the surface of the wafer in the first cavity 11. The remaining third gas after the chemical reaction can flow from the first cavity 11 to the second cavity 21.

[0094] S73. The exhaust pipe discharges the remaining third gas from the second cavity.

[0095] As Figure 2As shown, since one end of the exhaust pipe 40 is located outside the second furnace tube 20 and the other end of the exhaust pipe 40 is located inside the second cavity 21, the remaining third gas flowing into the second cavity 21 can be discharged from the exhaust pipe 40.

[0096] The embodiments of the present application have been described above in conjunction with the accompanying drawings. However, the present application is not limited to the above specific embodiments. The above specific embodiments are merely illustrative and not restrictive. Under the inspiration of the present application, those of ordinary skill in the art can also make many forms without departing from the purpose of the present application and the scope protected by the claims, and all of them fall within the protection scope of the present application.

Claims

1. A processing furnace, characterized in that: Comprising: A first furnace tube, within which a first cavity is formed; A second furnace tube, sleeved outside the first furnace tube, and a second cavity is formed between the second furnace tube and the first furnace tube, and the second cavity communicates with the first cavity; A first inlet pipe, one end of which is outside the second furnace tube and the other end is inside the first cavity; A second inlet pipe, one end of which is outside the second furnace tube and the other end is inside the second cavity; An exhaust pipe, one end of which is outside the second furnace tube and the other end is inside the second cavity.

2. The processing furnace according to claim 1, wherein The second inlet pipe includes a connected first conduit and a second conduit. One end of the first conduit is outside the second furnace tube and the other end is inside the second cavity. The second conduit is inside the second cavity, and through holes are provided on the wall of the second conduit.

3. The processing furnace according to claim 2, characterized in that A plurality of the through holes are provided on the wall of the second conduit.

4. The processing furnace according to claim 3, characterized in that, The plurality of through holes are arranged along the length direction of the second conduit.

5. The processing furnace according to claim 3 or 4, characterized in that, The center distance range between two adjacent through holes is 2 cm - 3 cm.

6. The processing furnace according to any one of claims 2-5, characterized in that, The dimension range of the through holes along the length direction of the second conduit is 6 mm - 10 mm.

7. The processing furnace according to any one of claims 2-6, characterized in that, Compared with the first end of the second furnace tube, both the first conduit and the exhaust pipe are close to the second end of the second furnace tube, and the distance between the first conduit and the first end is less than the distance between the exhaust pipe and the first end, and the second conduit extends towards the first end.

8. The processing furnace according to any one of claims 2-7, characterized in that, The projection of the second inlet pipe on the cross-section of the second furnace tube and the projection of the exhaust pipe on the cross-section have no overlap, and the cross-section is perpendicular to the length direction of the second furnace tube.

9. The processing furnace according to claim 8, characterized in that The projection of the second inlet pipe on the cross-section and the projection of the exhaust pipe on the cross-section are respectively located on opposite sides of the second furnace tube.

10. The processing furnace according to claim 8 or 9, characterized in that: The projection of the first inlet pipe on the cross-section and the projection of the second inlet pipe on the cross-section have no overlap, and the projection of the first inlet pipe on the cross-section and the projection of the exhaust pipe on the cross-section have no overlap.

11. The processing furnace according to any one of claims 2-10, characterized in that, The ratio range of the length of the second conduit to the length of the second furnace tube is 0.7 - 0.

9.

12. A processing device, characterized in that, Comprising a gas supply system and a processing furnace according to any one of claims 1 - 11, wherein the first inlet pipe and the second inlet pipe of the processing furnace are respectively connected to the gas supply system.

13. The processing device according to claim 12, characterized in that, The gas supply system includes a gas tank, and the first inlet pipe and the second inlet pipe are connected to the same gas tank.

14. An etching method, characterized in that, Applied to the processing furnace according to any one of claims 1 - 11, the etching method includes: The first inlet pipe introduces a first gas into the first cavity; The first gas etches the film layer attached to the inner wall of the first furnace tube, and flows from the first cavity to the second cavity, and etches the film layer attached to the outer wall of the first furnace tube and the film layer attached to the inner wall of the second furnace tube; The second inlet pipe introduces a second gas into the second cavity; The second gas etches the film layer attached to the outer wall of the first furnace tube and the film layer attached to the inner wall of the second furnace tube; The exhaust pipe discharges the remaining first gas and second gas after etching from the second cavity.

15. A processing method, characterized in that, Applied to the processing furnace according to any one of claims 1-11, the processing method includes: A first intake pipe introduces a third gas into the first cavity, and a wafer is fixed in the first cavity; The third gas undergoes a chemical reaction and forms a film layer on the wafer, and the remaining third gas after the chemical reaction flows from the first cavity to the second cavity; An exhaust pipe discharges the remaining third gas from the second cavity.

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