Machine control method and device, electronic equipment, medium and product
By adjusting the parameters of the electron beam to control the carbon deposition level, the problem of excessive carbon deposition on the machine is solved, ensuring that the wafers after measurement or photolithography meet product requirements and improving yield.
Patent Information
- Application Number
- CN202510481950.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-16
- Publication Date
- 2025-07-29
AI Technical Summary
The existing technology cannot adjust the integrated or equipped machines in a targeted manner, resulting in excessive carbon deposition, affecting the measurement or lithography effect of wafers, and failing to meet product requirements.
By obtaining the calibrated carbon deposition level, adjusting the irradiation time, energy density and scanning method of the electron beam, controlling the operating parameters of the target machine to ensure that the carbon deposition level is within an acceptable range.
The carbon deposition level of the wafer after measurement or photolithography is achieved, which is lower than or equal to the set threshold, and the yield of the wafer is improved.
Smart Images
Figure CN120388906A_ABST
Abstract
Description
Technical Field
[0001] This application belongs to the technical field of semiconductor integrated circuits, and particularly relates to a machine control method, device, electronic device, medium and product. Background Art
[0002] During the measurement and lithography processes of semiconductor devices, the problem of carbon deposition is a major focus in environmental control. Carbon deposition can cause changes in wafer patterns, line widths, etc., resulting in defects in the wafer, thereby rendering part or even all of the wafer unusable. For carbon deposition in the processes of mask use, measurement, and manufacturing, it may lead to mask failure, causing greater losses.
[0003] During the electron beam measurement and electron beam lithography processes, in order to avoid carbon deposition during the measurement process and the electro-etching process from contaminating the wafer and causing process failure, it is mainly achieved by controlling the hydrocarbon content in the vacuum chamber or the process chamber. For example, by strictly controlling the outgassing of materials in the chamber to release less hydrocarbon, or using special hydrocarbon removal means to remove hydrocarbons.
[0004] However, the above methods can only reduce the hydrocarbons in the chamber in limited ways. For a machine that has been integrated or equipped, it cannot be adjusted specifically, resulting in excessive carbon deposition during the measurement or lithography process of the machine on the wafer, that is, excessive carbon deposition during the measurement or lithography process of the machine on the wafer causes the processed wafer not to meet the product requirements. Summary of the Invention
[0005] Embodiments of this application provide a machine control method, device, electronic device, medium and product, which are used to solve the problem that excessive carbon deposition occurs during the measurement or lithography process of a machine on a wafer, resulting in defects in the wafer.
[0006] In the first aspect of the embodiments of this application, a machine control method is provided, including:
[0007] Obtain a calibrated carbon deposition level, where the calibrated carbon deposition level is used to indicate the carbon deposition level generated by a standard wafer under the electron beam scanning of a target machine;
[0008] When the calibrated carbon deposition level is higher than the carbon deposition level threshold corresponding to the target machine, determine the target working parameters of the target machine according to the calibrated carbon deposition level, where the target working parameters include at least one of the electron beam irradiation time, the energy density of the electron beam, the electron beam irradiation range, and the electron beam scanning method;
[0009] Control the electron beam in the target machine tool to measure or lithograph the target wafer according to the target working parameters, wherein the target carbon deposition level of the target wafer after measurement or lithography is lower than or equal to the carbon deposition level threshold.
[0010] In a second aspect of the embodiments of the present application, a machine tool control device is provided, including:
[0011] An acquisition module, configured to acquire a calibrated carbon deposition level, where the calibrated carbon deposition level is used to indicate the carbon deposition level generated by a standard wafer under the electron beam scanning of the target machine tool;
[0012] A determination module, configured to determine the target working parameters of the target machine tool according to the calibrated carbon deposition level when the calibrated carbon deposition level is higher than the carbon deposition level threshold corresponding to the target machine tool, where the target working parameters include at least one of the electron beam irradiation time, the energy density of the electron beam, the electron beam irradiation range, and the electron beam scanning mode;
[0013] A control module, configured to control the electron beam in the target machine tool to measure or lithograph the target wafer according to the target working parameters, wherein the target carbon deposition level of the target wafer after measurement or lithography is lower than or equal to the carbon deposition level threshold.
[0014] In a third aspect of the embodiments of the present application, an electronic device is provided, and the device includes: a memory and a program or instruction stored on the memory and executable on a processor, and when the program or instruction is executed by the processor, it implements the machine tool control method provided in any one of the above aspects of the embodiments of the present application.
[0015] In a fourth aspect of the embodiments of the present application, a readable storage medium is provided, and a program or instruction is stored on the readable storage medium, and when the program or instruction is executed by a processor, it implements the machine tool control method provided in any one of the above aspects of the embodiments of the present application.
[0016] In a fifth aspect of the embodiments of the present application, a computer program product is provided, and when the instructions in the computer program product are executed by the processor of the electronic device, the electronic device is caused to execute the machine tool control method provided in any one of the above aspects of the embodiments of the present application.
[0017] In the machine tool control method provided by the embodiments of the present application, the calibrated carbon deposition level generated by the standard wafer under the electron beam scanning of the machine tool is obtained. If the calibrated carbon deposition level is higher than the carbon deposition level threshold, the target scanning mode of the electron beam in the target machine tool is determined based on the calibrated carbon deposition level, and then the electron beam in the target machine tool is controlled to measure or lithograph the target wafer according to the target scanning mode, so that the carbon deposition level of the target wafer after measurement or lithography is lower than or equal to the carbon deposition level threshold. In the present application, the irradiation time and energy density of the electron beam in the machine tool are adjusted by calibrating the carbon deposition level of the standard wafer under the machine tool, so as to optimize the working parameters of the machine tool specifically, so that the carbon deposition level of the machine tool after lithography or measurement of other wafers is lower than or equal to the set carbon deposition level, ensuring that the carbon deposition level of the machine tool after lithography or measurement of the wafer is within an acceptable range, thereby ensuring that the wafer after lithography or measurement meets the product requirements and improving the yield rate of the wafer. Description of the Drawings
[0018] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings required to be used in the embodiments of the present application. For those of ordinary skill in the art, other drawings can also be obtained based on these drawings without creative efforts.
[0019] Figure 1 It is a schematic diagram of carbon deposition in the exemplary technology;
[0020] Figure 2 It is one of the schematic flowcharts of the machine tool control method provided by an embodiment of the present application;
[0021] Figure 3 It is a schematic diagram of carbon deposition on the wafer provided by an embodiment of the present application;
[0022] Figure 4 It is two of the schematic flowcharts of the machine tool control method provided by an embodiment of the present application;
[0023] Figure 5 It is three of the schematic flowcharts of the machine tool control method provided by an embodiment of the present application;
[0024] Figure 6 It is four of the schematic flowcharts of the machine tool control method provided by an embodiment of the present application;
[0025] Figure 7 It is five of the schematic flowcharts of the machine tool control method provided by an embodiment of the present application;
[0026] Figure 8 It is a schematic structural diagram of the machine tool control device provided by an embodiment of the present application;
[0027] Figure 9It is a schematic diagram of an electronic device provided by an embodiment of the present application. Detailed implementation manners
[0028] The features and exemplary embodiments of various aspects of the present application will be described in detail below. To make the purpose, technical solutions and advantages of the present application clearer, the present application will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only intended to explain the present application, rather than limiting the present application. For those skilled in the art, the present application can be implemented without some of these specific details. The following description of the embodiments is only to provide a better understanding of the present application by showing examples of the present application.
[0029] It should be noted that in this document, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the term "comprising", "including" or any other variation thereof is intended to cover a non-exclusive inclusion, so that a process, method, article or device including a series of elements not only includes those elements, but also includes other elements not expressly listed, or elements inherent to such process, method, article or device. Without further limitation, an element defined by the statement "including..." does not exclude the existence of additional identical elements in the process, method, article or device including the said element.
[0030] It should be noted that the acquisition, storage, use, processing, etc. of data in the technical solution of the present application all comply with the relevant regulations of national laws and regulations.
[0031] It should be noted that in the embodiments of the present application, some industry-existing solutions such as certain software, components, models, etc. may be mentioned. They should be considered exemplary, and their purpose is only to illustrate the feasibility in the implementation of the technical solution of the present application, but it does not mean that the applicant has already or necessarily used this solution.
[0032] In the measurement and lithography processes of semiconductor devices, the problem of carbon deposition is a major focus in environmental control. Carbon deposition can cause changes in wafer patterns, line widths, etc., resulting in defects in the wafer, thereby rendering part or even all of the wafer unusable. For carbon deposition in the mask use, measurement, and manufacturing processes, it may lead to mask failure, causing greater losses.
[0033] During the electron beam measurement and electron beam lithography processes, to avoid contamination of the wafer caused by carbon deposition during the measurement and etching processes, which may lead to process failure, it is mainly achieved by controlling the hydrocarbon content in the vacuum chamber or process chamber. For example, by strictly controlling the outgassing of materials in the chamber to release less hydrocarbons, or by using special hydrocarbon removal means to remove hydrocarbons.
[0034] To reduce the partial pressure or content of hydrocarbons in the chamber, strict control is exerted over the processes and outgassing of photoresist or etch resist, which are important sources of hydrocarbons, and higher requirements are also placed on the previous process to avoid the influence of hydrocarbons introduced by photoresist, etch resist, or the previous process on the measurement or etching process. For the etching process, there are also cases where a residual gas analyzer is used for real-time measurement of hydrocarbons. When the hydrocarbons exceed the threshold that affects the process, the process is terminated or an alarm is issued to prompt the user that the process is abnormal.
[0035] However, the above methods can only reduce the hydrocarbons in the chamber in limited ways. For the integrated or assembled machine tool, it cannot be adjusted specifically, resulting in excessive carbon deposition during the measurement or lithography of the wafer by the machine tool. That is, excessive carbon deposition during the measurement or lithography of the wafer by the machine tool causes the processed wafer to not meet the product requirements.
[0036] As can be seen from the above, the existing solutions have the following disadvantages:
[0037] 1. It can only reduce the hydrocarbons in the vacuum chamber or process chamber in limited ways and cannot be adjusted according to the changes in equipment performance after the equipment is integrated or assembled;
[0038] 2. It is unable to monitor the relevant performance changes, or a relatively costly residual gas analyzer is required to monitor the hydrocarbons, and the carbon deposition situation of the current process cannot be directly obtained from the hydrocarbon partial pressure;
[0039] 3. In a few processes, such as for thick photoresist wafers required, the measurement or etching process cannot optimize the process specifically, and the carbon deposition during the measurement or etching process is more serious.
[0040] In view of this, the present application provides a machine tool control method, device, electronic device, medium and product. In the machine tool control method provided by the embodiments of the present application, the calibrated carbon deposition level generated by the standard wafer under the electron beam scanning of the machine tool is obtained. If the calibrated carbon deposition level is higher than the carbon deposition level threshold, the target scanning mode of the electron beam in the target machine tool is determined based on the calibrated carbon deposition level, and then the electron beam in the target machine tool is controlled to measure or lithograph the target wafer according to the target scanning mode, so that the carbon deposition level of the target wafer after measurement or lithography is lower than or equal to the carbon deposition level threshold. In the present application, the irradiation time and energy density of the electron beam in the machine tool are adjusted by calibrating the carbon deposition level of the standard wafer under the machine tool, so as to optimize the working parameters of the machine tool specifically, so that the carbon deposition level of the machine tool after lithography or measurement of other wafers is lower than or equal to the set carbon deposition level, ensuring that the carbon deposition level of the machine tool after lithography or measurement of the wafer is within an acceptable range, thereby ensuring that the wafer after lithography or measurement meets the product requirements and improving the yield of the wafer.
[0041] It should be noted that the application scenarios described in the embodiments of the present application above are for more clearly explaining the technical solutions of the embodiments of the present application, and do not constitute a limitation on the technical solutions provided by the embodiments of the present application. Those of ordinary skill in the art know that with the emergence of new application scenarios, the technical solutions provided by the embodiments of the present application are equally applicable to similar technical problems. The machine tool control method provided by the embodiments of the present application can be applied to application scenarios such as wafer measurement or wafer lithography.
[0042] The inventive concept of the present application and the solutions of the present application are briefly described below.
[0043] The inventors of the present application found that the formation factor of carbon deposition is that under the irradiation of an electron beam or an energy beam, the chemical bonds in CxHy (hydrocarbon) in the gas component are broken, and amorphous carbon is formed on the surface. With the continuous irradiation of the electron beam or energy beam, the amorphous carbon gradually increases, resulting in carbon deposition. Depending on the irradiation conditions, the generation rate and generation morphology of carbon deposition are different, so there are also some applications that utilize this deposition for coating activities. The formation process of carbon deposition is as Figure 1 shown, and the deposition rate of carbon deposition is mainly related to the partial pressure of CxHy, electron beam density, etc.
[0044] Furthermore, the inventors' tests yielded several conclusions. The first is that under certain electron beam parameters (including beam energy, beam intensity, beam density, and beam active area), the carbon deposition rate is proportional to the hydrocarbon concentration or partial pressure in the main chamber. Another conclusion is that under varying electron beam energies and energy densities, the carbon deposition process is a dynamic equilibrium process. When the beam energy and energy density reach certain thresholds, the carbon deposition process shifts between states favoring either deposition or removal. This suggests that controlling carbon deposition can be achieved through several approaches. In addition to controlling hydrocarbon concentration or partial pressure, other approaches include controlling relevant electron beam parameters and scanning or electrolithography strategies (including beam exposure time, beam energy density, beam active area, and beam scanning method).
[0045] Based on the above conclusions, a machine control device is provided for the current electron beam measurement and electrolithography processes, which can quantitatively test the carbon deposition conditions of the current measurement machine or electrolithography machine. In addition, a method is provided for dynamically adjusting the electron beam measurement scanning mode and the electrolithography scanning mode of the measurement machine or electrolithography machine according to the measurement conditions obtained by the aforementioned measurement method, thereby reducing the impact of carbon deposition on the process.
[0046] The machine control device provided in this application has the function of quantitatively measuring carbon deposition. The machine control device needs to be coordinated with an electron beam measurement machine or an electrolithography machine. Wafers or wafer segments with standard line widths or standard patterns are placed in the main process chamber of the electron beam measurement machine or electrolithography machine. The carbon deposition measurement process is performed using a standard scanning method with standard electron beam parameters (including beam energy, beam intensity, beam density, beam active area, etc.). The scanning method includes parameters such as the electron beam active time and the scanning speed.
[0047] Since both electron beam measurement systems and electrolithography systems are capable of measuring line width or pattern, combined with appropriate testing methods and techniques, it is possible to measure changes in line width under standard electron beam parameters and standard scanning modes. By comparing line width or pattern changes under different test environments, including standard test environments and those with different process specifications, the carbon deposition rate can be quantified. The system control device can be installed within the electron beam's reach, such as on a moving stage or in a fixed position.
[0048] The following describes specific embodiments of the machine control method, device, equipment, medium, and product provided by the embodiments of the present application. First, the machine control method is introduced.
[0049] Reference Figure 2 , Figure 2 FIG1 shows one of the flow charts of the machine control method of the present application, which includes the following steps:
[0050] Step S201: Obtain the calibrated carbon deposition level, which is used to indicate the carbon deposition level generated under the electron beam scanning of the target machine tool.
[0051] In this embodiment, the execution entity is the machine tool control device, which is a device for controlling the machine tool. The machine tool can be a metrology machine tool or a lithography machine tool. The metrology machine tool is used to measure the wafer, while the lithography machine tool is used to perform lithography on the wafer.
[0052] The machine tool control device stores the carbon deposition level generated under the electron beam scanning of the standard wafer on the target machine tool. This carbon deposition level defines the calibrated carbon deposition level, and the unit of the calibrated carbon deposition level is nanometer, that is, the calibrated carbon deposition level refers to the thickness of the carbon deposition. The calibrated carbon deposition level is obtained by scanning the standard wafer with the electron beam of the target machine tool under standard working conditions, and the calibrated carbon deposition level is stored in association with the equipment identifier of the target machine tool in the machine tool control device. The machine tool control device obtains the equipment identifier of the target machine tool, so as to obtain the calibrated carbon deposition level associated with the equipment identifier. The target machine tool refers to the metrology machine tool or lithography machine tool that needs to adjust the working parameters.
[0053] Step S202: When the calibrated carbon deposition level is higher than the carbon deposition level threshold corresponding to the target machine tool, determine the target working parameters of the target machine tool according to the calibrated carbon deposition level. The target working parameters include at least one of the electron beam irradiation time, the energy density of the electron beam, the electron beam irradiation range, and the electron beam scanning mode.
[0054] The target machine tool is set with a carbon deposition level threshold, which refers to the acceptable thickness of the carbon deposition and can be set manually. The machine tool control device obtains the carbon deposition level threshold corresponding to the target machine tool. The machine tool control device obtains the calibrated carbon deposition level and then compares the calibrated carbon deposition level with the carbon deposition level threshold. When the calibrated carbon deposition level is higher than the carbon deposition level threshold, it can be determined that the carbon deposition generated by scanning the wafer with the target machine tool is too high and the working parameters of the target machine tool need to be optimized. If the calibrated carbon deposition level is lower than or equal to the carbon deposition level threshold, there is no need to adjust the working parameters of the target machine tool, that is, the target machine tool uses the existing working parameters to perform lithography or measurement on the target wafer to obtain a qualified product.
[0055] In this regard, the machine tool control device determines the target working parameters of the target machine tool based on the calibrated carbon deposition level. The target working parameters include at least one of the electron beam irradiation time, the energy density of the electron beam, the electron beam irradiation range, and the electron beam scanning mode.
[0056] In one example, electron beam parameters such as electron beam irradiation time, energy density of the electron beam, electron beam irradiation range, and electron beam scanning mode are such that the carbon deposition rate is proportional to the concentration or composition of hydrocarbons in the chamber under certain electron beam parameters. Therefore, changing the electron beam parameters can reduce the carbon deposition rate, and a reduced carbon deposition rate will lower the carbon deposition level. The machine control device obtains the calibrated working parameters of the target machine under the scanning of a standard wafer, and the calibrated working parameters are stored in association with the calibrated carbon deposition level. The machine control device reduces the calibrated working parameters to obtain the target working parameters.
[0057] In another example, under different electron beam parameters, the carbon deposition process is a dynamic equilibrium process. If the electron beam parameters reach a certain threshold, the carbon deposition process will tend to deposition and removal. Based on the initial carbon deposition level of the machine under the electron beam scanning of the wafer and the above discovery (when the electron beam parameters reach a certain threshold, the carbon deposition process will tend to deposition and removal), the machine's electron beam parameters are changed so that the carbon deposition level decreases, and the improved electron beam parameters and the initial carbon deposition level are stored in the database. The machine control device obtains the improved electron beam parameters associated with the calibrated carbon deposition level in the database as the target working parameters.
[0058] Step S203, controlling the electron beam in the target machine to measure or lithograph the target wafer according to the target working parameters, wherein the target carbon deposition level of the target wafer after measurement or lithography is lower than or equal to the carbon deposition level threshold.
[0059] After obtaining the target working parameters, the machine control device controls the electron beam in the target machine to measure or lithograph the target wafer according to the target working parameters. If the target machine is a measuring machine, the target wafer is measured based on the target working parameters; if the target machine is a lithography machine, the target wafer is lithographed based on the target working parameters. Since the target wafer is measured or lithographed using the target working parameters, the carbon deposition level on the target wafer after measurement or lithography is lower than or equal to the carbon deposition level threshold.
[0060] Refer to Figure 3 , Figure 3 in which Image a is an image of Wafer 1 scanned by the target machine without using the solution provided in this embodiment, Figure 3 in which Image b is an image of Wafer 1 scanned by the target machine using the solution provided in this embodiment. Compared with Image a, the carbon deposition on Wafer 1 in Image b is more uniform and the carbon deposition level is lower. Figure 3 in which Image c is an image of Wafer 2 scanned by the target machine without using the solution provided in this embodiment, Figure 3Image d is an image of the wafer 2 scanned by the target machine using the solution provided in this embodiment. Compared with image c, the carbon deposition on the wafer 2 in image d is more uniform and the carbon deposition level is lower.
[0061] In addition, compared with reducing the carbon deposition level of the wafer by using a carbon removal machine control device in the exemplary technology, and the carbon removal machine control device requires the machine to be configured with high-specification materials, while in this embodiment, by changing the working parameters of the electron beam in the machine, the reduction of the carbon deposition level can be achieved, and the cost required to improve the yield rate of the wafer is reduced.
[0062] If there are high requirements for the carbon deposition level, that is, the carbon deposition level threshold of the target machine is small, then a carbon deposition removal machine control device and optimizing the working parameters of the target machine based on the calibrated carbon deposition level can be used to make the carbon deposition level on the wafer meet the requirements. It can be understood that if the calibrated carbon deposition level is higher than the carbon deposition level threshold, and the difference between the calibrated carbon deposition level and the carbon deposition level threshold is greater than the preset difference, then control the carbon removal machine control device of the target machine to operate, and control the electron beam of the target machine to operate according to the target working parameters. If the calibrated carbon deposition level is higher than the carbon deposition level threshold, and the difference between the calibrated carbon deposition level and the carbon deposition level threshold is less than or equal to the preset difference, control the electron beam of the target machine to operate according to the target working parameters.
[0063] In this embodiment, the calibrated carbon deposition level generated by the standard wafer under the electron beam scanning of the machine is obtained. If the calibrated carbon deposition level is higher than the carbon deposition level threshold, then determine the target scanning method of the electron beam in the target machine based on the calibrated carbon deposition level, and then control the electron beam in the target machine to measure or lithograph the target wafer according to the target scanning method, so that the carbon deposition level of the target wafer after measurement or lithography is lower than or equal to the carbon deposition level threshold. In this application, by calibrating the carbon deposition level of the standard wafer under the machine, the irradiation time and energy density of the electron beam in the machine are adjusted, so as to optimize the working parameters of the machine specifically, so that the carbon deposition level of the machine after lithography or measurement of other wafers is lower than or equal to the set carbon deposition level, ensuring that the carbon deposition level of the machine after lithography or measurement of the wafer is within an acceptable range, thereby ensuring that the wafer after lithography or measurement meets the product requirements and improving the yield rate of the wafer.
[0064] Refer to Figure 4 , Figure 4 shows the second schematic flow chart of the machine control method of this application. Based on Figure 2 the embodiment shown, step S201 includes:
[0065] Step S401, determining the blank area of the standard wafer.
[0066] In this embodiment, the machine first calibrates the carbon deposition level of the standard wafer. Specifically, the machine control device determines the blank area on the standard wafer. The blank area refers to the area on the standard wafer available for carbon deposition. The area available for carbon deposition can be the area on the standard wafer without chips, or it can be the grains on the standard wafer available for carbon deposition. Therefore, the area available for carbon deposition includes the blank standard line width and the blank standard pattern.
[0067] The blank standard line width refers to the standard width of the scribing lines and sawing lines on the standard wafer. The standard width refers to the set width of the scribing lines and sawing lines. The scribing lines are a series of slender blank areas on the wafer surface used to separate different chip areas on the wafer, while the sawing lines are the actual paths used to mechanically cut the wafer into individual chips, and the actual path is the area on the wafer where physical division will be performed.
[0068] The blank standard pattern refers to the grains on the standard wafer with set dimensions and without etched electronic components or circuits. The original data of the standard wafer is stored in the machine control device. The machine control device measures the standard wafer under standard measurement conditions, and compares the measurement results with the original data to ensure that the line width or pattern in the standard wafer is usable. Exemplarily, when the width of the line width in the measurement result is greater than the width of the line width in the original data, the line width in the standard wafer is usable; when the size of the pattern (the size of the grain) in the measurement result is greater than the size of the pattern in the original data, the pattern in the standard wafer is usable.
[0069] In one example, the blank area is known, that is, the blank area has a known range in the coordinate system, and the blank area is determined on the standard wafer based on the known coordinates.
[0070] In another example, the machine control device determines the target object in the standard wafer, that is, determines the blank standard line width or the blank standard pattern as the target object. The machine control device determines the blank area in the standard wafer based on the target object. Exemplarily, after determining the target object, determine the size of the target object. If the size is greater than the preset size, then determine the area with the preset size in the target object as the blank area. For example, the preset size is A (length) × B (width). If the length of the target object is C and the width is D, and C is greater than A and D is greater than B, then the size of the target object is greater than the preset size, and the area divided into A (length) × B (width) in the target object is taken as the blank area. The area of A (length) × B (width) is taken as the blank area, so that the area for carbon deposition is large enough to accurately measure the carbon deposition level in the blank area.
[0071] Step S402: Control the target machine to perform electron beam scanning on the blank area to obtain a carbon deposition area by carbon deposition on the blank area.
[0072] After the machine tool control device determines the blank area on the standard wafer, it controls the target machine tool to scan the blank area using the standard parameters and standard scanning method of the electron beam to deposit carbon in the blank area, and the blank area where carbon deposition is performed is defined as the carbon deposition area. And the carbon deposition level in the carbon deposition area is used as the calibrated carbon deposition level.
[0073] Step S403: Measure the carbon deposition level of the carbon deposition area to obtain the calibrated carbon deposition level generated by the standard wafer under the electron beam scanning of the target machine tool.
[0074] After determining the measurement of the carbon deposition level in the carbon deposition area, the carbon deposition level generated by the standard wafer under the electron beam scanning of the target machine tool can be obtained to be used as the calibrated carbon deposition level. Exemplarily, a measurement tool can be used to measure the carbon deposition area to obtain the calibrated carbon deposition level. For example, laser is emitted at a set angle to the blank area, and the reflected laser is received to determine the first interval duration between the reflected laser and the received laser; after carbon deposition in the blank area, laser is emitted at the set angle to the blank area again and the reflected laser is received to obtain the second interval duration between the reflected laser and the received laser, calculate the difference between the second interval duration and the first interval duration, and the product of the difference and the speed of the laser divided by 2 is used as the distance, which is used as the calibrated carbon deposition level.
[0075] It should be noted that after the target machine tool calibrates the carbon deposition level of the standard wafer, if the target machine tool will not be put into use immediately, the calibrated carbon deposition level and the equipment identifier of the target machine tool can be stored in the database. If the target machine tool needs to be put into use immediately, the target working parameters of the target machine tool are determined based on the calibrated carbon deposition level, so that the target performs electroetching or measurement on the target wafer based on the target working parameters.
[0076] In this embodiment, through the measurement and control of the carbon deposition level during the electron beam measurement process and / or the measurement and control of the carbon deposition level during the electroetching process, targeted process parameter adjustment can be performed on wafers of different processes, reducing the overall carbon deposition level, and monitoring the overall chamber pollution level and process carbon deposition level at a low cost, realizing process monitoring and quantitative calibration of the carbon deposition degree. Finally, the efficiency of the electron beam measurement process is improved and the impact of the measurement on the wafer is reduced, the adaptability of the machine tool to different wafers during the electroetching process is improved, and the measurement and optimization results (the optimized result is the target working parameter) and the electroetching dose correction, etc. can act together to improve the yield of the electroetching process.
[0077] In this embodiment, the target machine tool scans the blank area of the standard wafer with an electron beam to obtain a carbon deposition area, and measures the carbon deposition level of the carbon deposition area, so as to accurately obtain the calibrated carbon deposition level generated by the standard wafer under the electron beam scanning of the target machine tool.
[0078] Referring to Figure 5 , Figure 5 FIG. 3 shows a third schematic flow chart of the machine tool control method of the present application. Based on Figure 4 the embodiment shown, step S403 includes:
[0079] Step S501, measure the carbon deposition level of the carbon deposition area to obtain the total carbon deposition level.
[0080] In this embodiment, the machine tool control device measures the carbon deposition level of the carbon deposition area by controlling the electron beam of the target machine tool. When the electron beam of the target machine tool measures the carbon deposition area, carbon deposition will also be generated. Therefore, the measured value is the total carbon deposition level. Total carbon deposition level = scanned carbon deposition level + measured carbon deposition level. The measured carbon deposition level refers to the carbon deposition level generated by the target machine tool when measuring the carbon deposition level of the carbon deposition area, and the scanned carbon deposition level refers to the carbon deposition level obtained by scanning the blank area with the electron beam of the target machine tool.
[0081] Step S502, determine the scanned carbon deposition level generated by scanning the blank area with the electron beam as the calibrated carbon deposition level according to the measured carbon deposition level generated by the measurement, the total carbon deposition level, and the mapping relationship, where the mapping relationship is used to indicate the mapping relationship between the measured carbon deposition level, the scanned carbon deposition level, and the total carbon deposition level.
[0082] The mapping relationship is stored in the machine tool control device, and the mapping relationship refers to the mapping relationship between the measured carbon deposition level, the scanned carbon deposition level, and the total carbon deposition level. After the machine tool control device determines the total carbon deposition level, it can calculate the scanned carbon deposition level based on the total carbon deposition level and the mapping relationship as the calibrated carbon deposition level.
[0083] Exemplarily, the electron beam of the target machine scans the blank area and measures the carbon deposition area under the same working conditions. Therefore, there is a functional relationship between the measured carbon deposition level and the scanned carbon deposition level. The relational expressions characterized by the functional relationship and the mapping relationship are both binary linear relational expressions, and two unknowns, namely the measured carbon deposition level and the scanned carbon deposition level, can be solved. For example, cA + dB = C, B = nA, where A is the measured carbon deposition level, B is the scanned carbon deposition level, C is the total carbon deposition level, and c, d, and n are constants; the two relational expressions cA + dB = C and B = nA are both binary linear relational expressions. Since c, d, and n are constants and C is known, the measured carbon deposition level A and the scanned carbon deposition level B can be determined.
[0084] In this embodiment, the total carbon deposition level is obtained by measuring the carbon deposition area, and thus the calibrated carbon deposition level is accurately determined through the total carbon deposition level.
[0085] Referring to Figure 6 , Figure 6 FIG. shows the fourth flow schematic diagram of the machine control method of the present application. Based on Figure 4 or Figure 5 the embodiments shown in, step S202 includes:
[0086] Step S601, obtaining the measured carbon deposition level generated by measuring the carbon deposition area.
[0087] In this embodiment, the machine control device controls the electron beam of the target machine to measure the carbon deposition area. During the measurement process, carbon deposition will be generated, and the generated carbon deposition is defined as the measured carbon deposition level. The measured carbon deposition level can be determined through the mapping relationship and the functional relationship. For specific reference, see the above description and details will not be repeated here.
[0088] Step S602, determining the target working parameters of the target machine according to the measured carbon deposition level and the calibrated carbon deposition level.
[0089] After obtaining the measured carbon deposition level, based on the measured carbon deposition level and the calibrated carbon deposition level, the target working parameters of the target machine are determined.
[0090] Exemplarily, based on the calibrated carbon deposition level, the first carbon deposition rate in the chamber of the target machine can be determined, and based on the measured carbon deposition level, the second carbon deposition rate in the chamber can be determined. An empirical formula is obtained for reducing the carbon deposition rate. By using the first carbon deposition rate, the second carbon deposition rate, and the empirical formula, the target working parameters can be calculated.
[0091] In this embodiment, the target working parameters of the target machine are accurately determined by measuring the carbon deposition level and the calibrated carbon deposition level.
[0092] Refer to Figure 7 , Figure 7 which shows the fifth schematic flow diagram of the machine tool control method of the present application. Based on Figures 2 to 5 any of the embodiments shown in
[0093] Step S701: Obtain reference parameters, where the reference parameters include at least one of the application environment parameters of the target wafer and the process parameters of the target wafer.
[0094] In this embodiment, for wafers under different application environments and different processes, the carbon deposition rate is different. Therefore, in the improvement test of the carbon deposition rate in the wafer, the application environment parameters and process parameters need to be considered. For this purpose, a mapping table can be formed with the calibrated carbon deposition level, application environment parameters, process parameters, and the working parameters optimized by the machine tool. The application environment parameters are, for example, the highest temperature and highest humidity corresponding to the application scenario of the target wafer; the process parameters are, for example, the type of process for manufacturing the wafer, etc.
[0095] After the machine tool control device obtains the calibrated carbon deposition level of the standard wafer, it then obtains the reference parameters, where the reference parameters include at least one of the application environment parameters of the target wafer and the process parameters of the target wafer. The reference parameters are stored in the database, and the machine tool control device obtains the reference parameters from the database through the generation record of the target wafer.
[0096] Step S702: Determine the target working parameters of the target machine tool in the database according to the reference parameters and the calibrated carbon deposition level.
[0097] After obtaining the reference parameters, based on the reference parameters and the calibrated carbon deposition level, determine the target working parameters of the target machine tool in the database. Exemplarily, based on the reference parameters and the calibrated carbon deposition level, in the mapping table in the database, find the working parameters as the target working parameters.
[0098] In this embodiment, the machine tool control device accurately determines the target working parameters in the database through the application environment parameters, process parameters, and calibrated carbon deposition level of the target wafer
[0099] Based on the machine tool control method. Correspondingly, the present application also provides a specific embodiment of the machine tool control device.
[0100] As Figure 8 shown, the machine tool control device 800 provided by the embodiment of the present application includes:
[0101] An acquisition module 810, configured to acquire a calibrated carbon deposition level, where the calibrated carbon deposition level is used to indicate the carbon deposition level generated by the standard wafer under the electron beam scanning of the target machine tool;
[0102] A determination module 820, configured to determine, when a calibrated carbon deposition level is higher than a carbon deposition level threshold corresponding to a target machine, target operating parameters of the target machine according to the calibrated carbon deposition level, where the target operating parameters include at least one of an electron beam irradiation time, an energy density of the electron beam, an electron beam irradiation range, and an electron beam scanning mode;
[0103] A control module 830, configured to control an electron beam in the target machine to measure or lithograph a target wafer according to the target operating parameters, where a target carbon deposition level of the target wafer after measurement or lithography is lower than or equal to the carbon deposition level threshold.
[0104] As an optional embodiment, the machine tool control device 800 is configured to:
[0105] Determine a blank area of a standard wafer;
[0106] Control the target machine to perform electron beam scanning on the blank area to deposit carbon on the blank area to obtain a carbon deposition area;
[0107] Measure a carbon deposition level of the carbon deposition area to obtain a calibrated carbon deposition level generated by electron beam scanning of the standard wafer on the target machine.
[0108] As an optional embodiment, the machine tool control device 800 is configured to:
[0109] Measure a carbon deposition level of the carbon deposition area to obtain a total carbon deposition level;
[0110] Determine a scanned carbon deposition level generated by electron beam scanning of the blank area according to the measured carbon deposition level, the total carbon deposition level, and a mapping relationship, so as to use the scanned carbon deposition level as the calibrated carbon deposition level, where the mapping relationship is used to indicate a mapping relationship among the measured carbon deposition level, the scanned carbon deposition level, and the total carbon deposition level.
[0111] As an optional embodiment, the machine tool control device 800 is configured to:
[0112] Determine a target object in the standard wafer, where the target object is a blank standard line width or a blank standard pattern;
[0113] Determine a blank area in the standard wafer according to the target object.
[0114] As an optional embodiment, the machine tool control device 800 is configured to:
[0115] Obtain a measured carbon deposition level generated by measuring a carbon deposition area;
[0116] Determine target operating parameters of the target machine according to the measured carbon deposition level and the calibrated carbon deposition level.
[0117] As an alternative embodiment, the machine tool control device 800 is configured to:
[0118] Obtain reference parameters, where the reference parameters include at least one of the application environment parameters of the target wafer and the process parameters of the target wafer;
[0119] Determine the target operating parameters of the target machine tool in the database according to the reference parameters and the calibrated carbon deposition level.
[0120] Based on the machine tool control method. Correspondingly, the present application also provides a specific embodiment of an electronic device for machine tool control.
[0121] Figure 9 FIG. shows a schematic hardware structure diagram of an electronic device for a machine tool control method provided by an embodiment of the present application.
[0122] The electronic device may include a processor 901 and a memory 902 storing computer program instructions.
[0123] Specifically, the above-mentioned processor 901 may include a central processing unit (CPU), or an application specific integrated circuit (ASIC), or one or more integrated circuits configured to implement the embodiments of the present application.
[0124] The memory 902 may include a mass memory for data or instructions. By way of example and not limitation, the memory 902 may include a hard disk drive (HDD), a floppy disk drive, a flash memory, an optical disk, a magneto-optical disk, a magnetic tape, or a universal serial bus (USB) drive, or a combination of two or more of these. In a suitable case, the memory 902 may include a removable or non-removable (or fixed) medium. In a suitable case, the memory 902 may be inside or outside the integrated gateway disaster recovery device. In a specific embodiment, the memory 902 is a non-volatile solid-state memory.
[0125] The processor 901 reads and executes the computer program instructions stored in the memory 902 to implement any one of the machine tool control methods in the above embodiments.
[0126] In one example, the electronic device may further include a communication interface 903 and a bus 910. Among them, as Figure 9 shown, the processor 901, the memory 902, and the communication interface 903 are connected through the bus 910 and complete communication with each other.
[0127] The communication interface 903 is mainly used to implement the communication between various modules, devices, units, and / or equipment in the embodiments of the present application.
[0128] The bus 910 includes hardware, software, or both, and couples the components of the electronic device to each other. By way of example and not limitation, the bus may include an Accelerated Graphics Port (AGP) or other graphics bus, an Enhanced Industry Standard Architecture (EISA) bus, a Front Side Bus (FSB), a HyperTransport (HT) interconnect, an Industry Standard Architecture (ISA) bus, an InfiniBand interconnect, a Low Pin Count (LPC) bus, a memory bus, a MicroChannel Architecture (MCA) bus, a Peripheral Component Interconnect (PCI) bus, a PCI-Express (PCI-X) bus, a Serial Advanced Technology Attachment (SATA) bus, a Video Electronics Standards Association Local (VLB) bus, or other suitable buses or a combination of two or more of these. In suitable cases, the bus 910 may include one or more buses. Although the embodiments of the present application describe and illustrate specific buses, the present application contemplates any suitable bus or interconnect.
[0129] In addition, in combination with the machine control method in the above embodiments, the embodiments of the present application can be implemented by providing a computer storage medium. Computer program instructions are stored on the computer storage medium; when the computer program instructions are executed by a processor, any one of the machine control methods in the above embodiments is implemented.
[0130] In addition, in combination with the machine control method in the above embodiments, the embodiments of the present application can be implemented by providing a computer program product. When the instructions in the computer program product are executed by the processor of the electronic device, the electronic device is caused to execute the machine control method provided in any aspect of the above embodiments of the present application.
[0131] It should be clear that the present application is not limited to the specific configurations and processes described above and illustrated in the figures. For the sake of brevity, the detailed description of known methods is omitted here. In the above embodiments, several specific steps are described and illustrated as examples. However, the method process of the present application is not limited to the specific steps described and illustrated, and those skilled in the art can make various changes, modifications, and additions, or change the order between steps after understanding the spirit of the present application.
[0132] The functional blocks shown in the above structural block diagram can be implemented as hardware, software, firmware, or a combination thereof. When implemented in hardware, it can be, for example, an electronic circuit, an application specific integrated circuit (ASIC), appropriate firmware, a plug-in, a functional card, and so on. When implemented in software, the elements of the present application are programs or code segments used to perform the required tasks. The program or code segment can be stored in a machine-readable medium or transmitted via a data signal carried in a carrier wave over a transmission medium or a communication link. A "machine-readable medium" can include any medium capable of storing or transmitting information. Examples of machine-readable media include electronic circuits, semiconductor memory devices, ROM, flash memory, erasable ROM (EROM), floppy disks, CD-ROMs, optical discs, hard disks, fiber optic media, radio frequency (RF) links, and so on. The code segment can be downloaded via a computer network such as the Internet, an intranet, and so on.
[0133] It should also be noted that the exemplary embodiments mentioned in the present application describe some methods or systems based on a series of steps or devices. However, the present application is not limited to the order of the above steps, that is, the steps can be executed in the order mentioned in the embodiments, can be different from the order in the embodiments, or several steps can be executed simultaneously.
[0134] As described above with reference to the flowcharts and / or block diagrams of methods, apparatuses (systems), and computer program products according to embodiments of the present disclosure. It should be understood that each block in the flowcharts and / or block diagrams, and the combinations of blocks in the flowcharts and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, or other programmable data processing device to produce a machine such that the instructions executed by the processor of the computer or other programmable data processing device enable the implementation of the functions / actions specified in one or more blocks of the flowchart and / or block diagram. Such a processor can be, but is not limited to, a general-purpose processor, a special-purpose processor, a special application processor, or a field programmable logic circuit. It can also be understood that each block in the block diagram and / or flowchart, and the combinations of blocks in the block diagram and / or flowchart, can also be implemented by dedicated hardware that performs the specified functions or actions, or can be implemented by a combination of dedicated hardware and computer instructions.
[0135] The above is only the specific implementation manner of the present application. Those skilled in the art can clearly understand that for the convenience and brevity of description, the specific working processes of the systems, modules, and units described above can refer to the corresponding processes in the foregoing method embodiments and will not be elaborated herein. It should be understood that the protection scope of the present application is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present application can easily think of various equivalent modifications or substitutions, and these modifications or substitutions should all be covered within the protection scope of the present application.
Claims
1. A machine control method, characterized in that, Including: Obtain a calibrated carbon deposition level, which is used to indicate the carbon deposition level generated by a standard wafer under the electron beam scanning of a target machine; When the calibrated carbon deposition level is higher than the carbon deposition level threshold corresponding to the target machine, determine the target working parameters of the target machine according to the calibrated carbon deposition level, where the target working parameters include at least one of the electron beam irradiation time, the energy density of the electron beam, the electron beam irradiation range, and the electron beam scanning mode; Control the electron beam in the target machine to measure or lithograph a target wafer according to the target working parameters, where the target carbon deposition level of the target wafer after measurement or lithography is lower than or equal to the carbon deposition level threshold.
2. The method according to claim 1, wherein The obtaining of the calibrated carbon deposition level includes: Determine a blank area of the standard wafer; Control the target machine to perform electron beam scanning on the blank area to deposit carbon on the blank area to obtain a carbon deposition area; Measure the carbon deposition level of the carbon deposition area to obtain the calibrated carbon deposition level generated by the standard wafer under the electron beam scanning of the target machine.
3. The method according to claim 2, characterized in that, The measuring of the carbon deposition level of the carbon deposition area to obtain the calibrated carbon deposition level generated by the standard wafer under the electron beam scanning of the target machine includes: Measure the carbon deposition level of the carbon deposition area to obtain the total carbon deposition level; According to the measured carbon deposition level, the total carbon deposition level, and the mapping relationship, determine the scanning carbon deposition level generated by the electron beam scanning of the blank area as the calibrated carbon deposition level, where the mapping relationship is used to indicate the mapping relationship between the measured carbon deposition level, the scanning carbon deposition level, and the total carbon deposition level.
4. The method according to claim 2, wherein The determining of the blank area of the standard wafer includes: Determine a target object in the standard wafer, where the target object is a blank standard line width or a blank standard pattern; Determine a blank area in the standard wafer according to the target object.
5. The method according to claim 2, wherein The determining of the target working parameters of the target machine according to the calibrated carbon deposition level includes: Obtain the measured carbon deposition level generated by measuring the carbon deposition area; Determine the target working parameters of the target machine according to the measured carbon deposition level and the calibrated carbon deposition level.
6. The method according to claim 1, wherein The determining of the target working parameters of the target machine according to the calibrated carbon deposition level includes: Obtain a reference parameter, where the reference parameter includes at least one of the application environment parameters of the target wafer and the process parameters of the target wafer; Determine the target working parameters of the target machine in a database according to the reference parameter and the calibrated carbon deposition level.
7. A machine control device, characterized in that, Including: An obtaining module, which is used to obtain a calibrated carbon deposition level, and the calibrated carbon deposition level is used to indicate the carbon deposition level generated by a standard wafer under the electron beam scanning of a target machine; A determination module, configured to determine, when the calibrated carbon deposition level is higher than the carbon deposition level threshold corresponding to the target machine, target operating parameters of the target machine according to the calibrated carbon deposition level, where the target operating parameters include at least one of an electron beam irradiation time, an energy density of the electron beam, an electron beam irradiation range, and an electron beam scanning mode; A control module, configured to control the electron beam in the target machine to measure or lithograph a target wafer according to the target operating parameters, where a target carbon deposition level of the target wafer after measurement or lithography is lower than or equal to the carbon deposition level threshold.
8. An electronic device, characterized in that, The apparatus includes: a processor and a memory storing computer program instructions; When the processor executes the computer program instructions, the method for controlling a machine as described in any one of claims 1-6 is implemented.
9. A computer-readable storage medium, characterized in that, Computer program instructions are stored on the computer-readable storage medium, and when the computer program instructions are executed by a processor, the method for controlling a machine as described in any one of claims 1-6 is implemented.
10. A computer program product, characterized in that, When the instructions in the computer program product are executed by a processor of an electronic device, the electronic device is caused to execute the method for controlling a machine as described in any one of claims 1-6.