Spraying base body, spraying head assembly and semiconductor processing equipment

Abstract

The invention discloses a spraying base body, a spraying head assembly and semiconductor processing equipment, and relates to the field of semiconductors. The spraying base body is used for forming a gas uniformizing cavity with a spraying plate and comprises a back plate, a side wall part and a sealing edge which are integrally connected in an airtight mode, a channel used for supplying gas to a gas transmission pipeline is formed in the back plate, the back plate comprises a center plate and an edge part which are fixed into a whole, and the edge part is located on the radial periphery of the center plate; the heat conductivity of the edge part is lower than that of the center plate, the edge part is connected with a side wall part, and a sealing edge is connected above the side wall part and is used for being in airtight connection with a chamber wall of a process chamber, so that the whole spraying base body is in airtight isolation from the inside and the outside of the process chamber. Therefore, outward heat conduction of the edge area of the back plate through the side wall part is inhibited, heat dissipation of the edge of the back plate to the cavity wall is inhibited, the temperature distribution gradient of the back plate is reduced, and finally the uniformity of the surface temperature of the wafer is influenced.

Description

Technical Field

[0001] The present invention relates to the field of semiconductors, and particularly to a spraying substrate, a shower head assembly and a semiconductor processing device. Background Art

[0002] In the manufacturing process of semiconductors, the temperature uniformity on the surface of a wafer is very important for the process result. In some semiconductor devices, the shower head faces the wafer directly, and the shower plate exchanges heat with the wafer by radiation. Therefore, the temperature distribution of the shower plate has a great influence on the temperature of the wafer surface.

[0003] Currently, the common practice is to use a highly thermally conductive metal, such as nickel (Ni), as the material of the shower plate to reduce the temperature gradient inside the shower plate. Moreover, a heater is provided in the shower head assembly to control its temperature distribution.

[0004] However, since the shower head assembly needs to be hermetically connected to the wall of the process chamber, when a highly thermally conductive metal is used to make the shower head assembly, the heat at the edge of the back plate will be directed to the wall of the process chamber, resulting in a lower temperature at the edge, which is not conducive to the temperature uniformity of the shower plate. Summary of the Invention

[0005] Based on the above problems, the present invention provides a spraying substrate for forming a gas equalizing chamber with a shower plate, which includes a back plate, a side wall portion and a sealing edge that are integrally and hermetically connected. A channel for supplying gas to a gas transmission pipeline is formed on the back plate. The back plate includes a central plate and an edge portion that are fixed together. The edge portion is located radially outside the central plate, and the thermal conductivity of the edge portion is lower than that of the central plate. The edge portion is connected to the side wall portion, and a sealing edge is connected above the side wall portion. The sealing edge is used for hermetically connecting with the wall of the process chamber so that the whole spraying substrate is hermetically isolated from the inside and outside of the process chamber.

[0006] Optionally, the edge portion has a support edge, the support edge is located below the inner circumference of the edge portion, and the outer circumference above the central plate has a first extension portion that is hermetically fitted with the support edge. The first extension portion is placed on the support edge and is supported and fixed via the support edge.

[0007] Optionally, an inclined transition section is provided below the support edge.

[0008] Optionally, the upper part of the edge portion has an upper flange, the side wall portion is connected to the upper flange, and there is a fitting gap between the inner side wall of the upper flange and the first extension portion.

[0009] Optionally, a gap groove is provided at the outer edge of the first extension portion.

[0010] Optionally, a stepped portion is formed on the upper flange, and the lower end of the side wall portion is embedded in the stepped portion to be hermetically fixed to the edge portion.

[0011] Optionally, a first sealing ring and a second sealing ring which are radially spaced are provided on the airtight fixing surface of the sealing edge and the chamber wall.

[0012] Optionally, a cooling channel is provided inside the sealing edge, and the cooling channel is sealed by a cooling cover plate.

[0013] Optionally, struts are also connected between the sealing edge and the edge portion.

[0014] Optionally, the thickness of the side wall portion does not exceed 2 mm.

[0015] Optionally, a heating device is provided on the back plate, and the area covered by the heating device is the area surrounded by the side wall portion.

[0016] Optionally, a heating device is provided on the back plate, the heating device is spaced from the side wall portion by a certain distance to form a spaced area, and a temperature control device is provided in the edge portion.

[0017] Optionally, the heating device includes a plurality of sub-heating devices distributed radially, and a sub-heating device that can be independently controlled is provided at the edge portion.

[0018] Optionally, a heat insulation portion is provided in the spaced area between the heating device and the side wall portion.

[0019] Optionally, the heating device includes a first layer, a second layer, and a heater sandwiched between the first layer and the second layer.

[0020] Optionally, the first layer is located on the side away from the back plate, the second layer is located on the side close to the back plate and is in close contact with the back plate, and the thermal conductivity of the first layer is lower than that of the second layer.

[0021] Optionally, a heat reflection layer is provided on the surface of the first layer in contact with the heater.

[0022] The present invention also provides a spray head assembly, including the aforementioned spray base body and a spray plate. The spray base body and the spray plate form an air distribution chamber. The peripheral edge of the spray plate has an upward second extension portion, and the second extension portion is airtightly connected to the installation portion below the edge portion.

[0023] Optionally, the spray plate and the center plate are made of nickel.

[0024] Optionally, the spray plate has a plurality of spray holes. The spray holes are located in the spray hole area on the spray plate. The second extension portion is located in the edge area on the spray plate. The center plate is at least opposite to the spray hole area.

[0025] Optionally, the second extension portion is detachably and fixedly connected to the installation portion through a mounting member.

[0026] Optionally, the outermost circumference of the edge portion has a second outer end face, and the outermost circumference of the spray plate has a first outer end face. In the vertical projection, the second outer end face does not exceed the radial range of the first outer end face.

[0027] Optionally, the outermost periphery of the central plate has a second outer edge face, and the inner circumference of the second extension portion has a first inner end face. The vertical projection of the second outer edge face is radially inside the first inner end face.

[0028] The present invention also provides a semiconductor processing apparatus, including a chamber wall of a process chamber, the aforementioned shower head assembly located inside the chamber wall, and a susceptor capable of carrying a wafer located below the shower head assembly, wherein the shower head assembly is hermetically connected to the chamber wall.

[0029] Through the arrangement of the edge portion with a lower thermal conductivity than that of the central plate, the side wall portion is connected to the edge portion instead of being connected to the central plate, suppressing the outward heat conduction of the edge region of the back plate through the side wall portion, and suppressing the heat dissipation of the edge of the back plate to the chamber wall. Thus, the temperature distribution gradient of the back plate is reduced, making the temperature more uniform, and further affecting the spray plate to make the temperature of the spray plate more uniform, so as to further make the temperature of the wafer W more uniform. Description of the Drawings

[0030] Figure 1 It is a schematic diagram of the internal structure of the process chamber of a semiconductor processing apparatus according to the present invention.

[0031] Figure 2 It is a schematic diagram of a spray substrate according to the present invention.

[0032] Figure 3 It is another schematic diagram of a spray substrate according to the present invention.

[0033] Figure 4 It is a schematic diagram of the installation of a shower head assembly according to the present invention.

[0034] Figure 5 It is a schematic diagram of the force on an edge portion according to the present invention.

[0035] Figure 6 It is a schematic diagram of an edge portion according to the present invention.

[0036] Figure 7 It is a schematic diagram of the edge structure of a back plate according to the present invention.

[0037] Figure 8 It is a partially enlarged schematic diagram of a spray substrate according to the present invention.

[0038] Figure 9 It is another schematic diagram of the internal structure of the process chamber of a semiconductor processing apparatus according to the present invention.

[0039] Figure 10Another partial enlarged schematic view of the spray matrix of the present invention.

[0040] Figure 11 Another schematic view of the internal structure of the process chamber of a semiconductor processing device of the present invention.

[0041] Figure 12 A schematic view of a heating device of the present invention.

[0042] Figure 13 Another schematic view of the spray matrix of the present invention.

[0043] Reference numerals in the drawings:

[0044] Wafer W

[0045] Spray matrix 10

[0046] Base 20

[0047] Gas transmission pipe 30 Chamber wall 40

[0048] Backplane 100

[0049] First outer edge surface 101

[0050] First extension 110

[0051] Second outer edge surface 111

[0052] Gap groove 112

[0053] Spray plate 200

[0054] First outer end surface 201

[0055] First inner end surface 202

[0056] Second extension 210

[0057] Mounting member 220

[0058] Spray hole 230

[0059] Edge portion 300

[0060] Second outer end surface 301

[0061] Mounting portion 310

[0062] First connecting surface 311

[0063] Support flange 320

[0064] Deflecting surface 321

[0065] Second connecting surface 322

[0066] Upper flange 330

[0067] The first fixing hole 331

[0068] The stepped portion 340

[0069] The side wall portion 400

[0070] The sealing edge 500

[0071] The first sealing ring 511

[0072] The second sealing ring 512

[0073] The cooling channel 521

[0074] The cooling cover plate 522

[0075] The second fixing hole 530

[0076] The support pillar 600

[0077] The heating device 700

[0078] The first layer 710

[0079] The second layer 720

[0080] The heater 730

[0081] The temperature control device 810

[0082] The heat insulation portion 820 Detailed implementation manners

[0083] Next, the technical solutions of the present invention will be clearly and completely described in conjunction with the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all of the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0084] Figure 1 The structural schematic diagram of the process chamber of a semiconductor processing device of the present invention is shown, including a shower head assembly located inside the chamber wall 40 and a wafer W located below the shower head assembly. The wafer W is carried by a pedestal 20. The shower head assembly includes a back plate 100 and a shower plate 200. The edges of the back plate 100 and the shower plate 200 are connected to form a gas distribution cavity 11. The edge of the back plate 100 is lifted by the side wall portion 400 and is hermetically connected to the chamber wall 40 through the sealing edge 500.

[0085] It can be seen that the spray head assembly is directly opposite to the wafer W, and the radiative heat transfer between the two is obvious. In particular, the spray plate 200 in the spray head assembly directly exchanges heat with the wafer W, and the temperature distribution of the spray plate 200 has a significant impact on the temperature distribution of the wafer W. Since the back plate 100 is directly opposite to the spray plate 200 and the distance between them is relatively close, the heat exchange effect is significant. Therefore, the temperature distribution of the back plate 100 has an important impact on the spray plate 200.

[0086] In order to improve the temperature distribution uniformity of the back plate 100 and the spray plate 200, it is a common practice to integrally make both of them from high thermal conductivity materials, such as nickel (Ni), to minimize the internal temperature difference as much as possible.

[0087] However, since the edge of the back plate 100 is connected to the side wall portion 400, and the outside of the sealing edge 500 is generally in an atmospheric environment with a lower temperature, due to the high thermal conductivity of nickel, a large amount of heat at its edge will be conducted outward through the side wall portion 400 and dissipated to the chamber wall through the outer edge, resulting in a relatively lower temperature in the edge region compared to the central region. Simply reducing the thermal conductivity of the side wall portion 400 is also difficult to effectively improve the above problem.

[0088] Therefore, according to one aspect of the present invention, a spray base 10 is provided, which is used to form a gas distribution cavity 11 with the spray plate 200, as Figure 1 shown, including a back plate 100, a side wall portion 400, and a sealing edge 500. A channel for supplying gas by the gas transmission pipe 30 is formed on the back plate 100. The back plate 100 includes a central plate and an edge portion 300 located radially outside the central plate. The thermal conductivity of the edge portion 300 is lower than that of the central plate. The edge portion 300 is connected to the side wall portion 400, and the sealing edge 500 is connected above the side wall portion 400 to seal and fix the spray base 10 to the chamber wall 40 through the sealing edge 500.

[0089] It can be understood that the meaning of sealed fixation is that, without considering the channel for supplying gas by the gas transmission pipe 30, the entire spray base 10 is hermetically isolated from the inside and outside of the process chamber to meet the airtight requirements of some vacuum process chambers.

[0090] Thus, through the setting of the edge portion 300 with a lower thermal conductivity than the central plate, the side wall portion 400 is connected to the edge portion 300 instead of the central plate, suppressing the outward heat conduction of the edge region of the back plate 100 through the side wall portion 400, and suppressing the heat dissipation of the edge of the back plate 100 to the chamber wall 40. Thus, the temperature distribution gradient of the back plate 100, especially the central plate, is reduced, making the temperature more uniform, and further affecting the spray plate 200 to make the temperature of the spray plate 200 more uniform, so as to make the temperature of the wafer W more uniform.

[0091] It can be understood that the edge portion 300 can be a structure where the joint of the two components with the central plate is melted into one body, or it can be a separate structure welded to the central plate to form the integrated back plate 100.

[0092] In one embodiment, the edge portion 300 has a support flange 320, as Figure 2 shown. The support flange 320 is located below the inner circumference of the edge portion 300 and above the outer circumference of the central plate. The first extension portion 110 that is in sealing fit with the support flange 320 is provided above the outer circumference of the central plate. The first extension portion 110 is placed on the support flange 320 and provides a supporting effect through the support flange 320 to improve the fixing strength of the central plate. Since the edge portion 300 and the central plate are made of materials with different heat conductivities, there are problems of thermal stress and compressive resistance. By supporting and connecting the central plate through the support flange 320, the overall mechanical strength of the backplane 100 is improved. And due to the mutual fitting and sealing connection between the first extension portion 110 and the support flange 320, the airtightness of the overall backplane 100 is ensured (without considering the air supply channels of the gas transmission pipeline 30).

[0093] In one embodiment, an inclined transition section is provided below the support flange 320, as Figure 3 shown. The lower surface of the support flange 320 is a transition inclined surface 321. The transition inclined surface 321 inclines downward from the innermost circumference of the support flange 320 to the outside, which is beneficial for the fixed installation in cooperation with the spray plate 200. At the same time, a diversion surface is formed at the edge of the formed uniform gas cavity 11, which is beneficial for the flow of process gas and avoids the formation of stagnant dead zones at the edge.

[0094] Preferably, each component of the spray base body 10 is hermetically fixed into one body by welding.

[0095] According to another aspect of the present invention, a spray head assembly is further provided, as Figure 4 shown. The spray head assembly includes a spray base body 10 and a spray plate 200, and a uniform gas cavity 11 is formed between the spray base body 10 and the spray plate 200. The circumferential edge of the spray plate 200 has an upward second extension portion 210, which is hermetically connected to the installation portion 310 below the edge portion 300.

[0096] Preferably, the spray plate 200 and the central plate are made of the same high heat conductivity material, such as nickel (Ni), to minimize the temperature difference inside the spray plate 200 as much as possible. It can be understood that when using nickel material, considering the existing metallurgical purity factors, a certain amount of impurities is allowed. The spray plate 200 has a plurality of spray holes 230. The spray holes 230 are located in the spray hole area on the spray plate 200, and the second extension portion 210 is located in the edge area on the spray plate 200. The central plate is at least opposite to the spray hole area, that is, the projection area of the central plate on the spray plate 200 at least covers the spray hole area. The spray hole area is directly opposite to the wafer W. Thus, the temperature distribution of the central plate can directly affect the temperature distribution of the spray hole area, making the temperature of the radiation heat exchange area directly opposite to the wafer W relatively uniform.

[0097] In one embodiment, the second extension portion 210 is vertically detachably and fixedly connected to the installation portion 310 through the installation member 220. The installation member 220 can be a screw, a bolt, etc., which facilitates the disassembly and assembly of the spray plate 200 and is convenient for maintenance work.

[0098] When the operating temperature of the spray head assembly exceeds 300 °C, obvious adhesion will occur between the connecting surfaces of the two connecting components of the high thermal conductivity material metal, such as nickel (Ni), making it difficult to separate the two components. The spray plate 200 and the edge portion 300 are components with different thermal conductivities, so that the back plate 100 and the spray plate 200 are not easily adhered by heat, avoiding the inability to disassemble the spray plate 200 during maintenance.

[0099] And, the thermal stress received by the edge portion 300 can be as Figure 5 shown. Since the installation portion 310 below the edge portion 300 is separately fixedly connected to the second extension portion 210, the inner side of the edge portion 300 is connected to the center plate, and the spray plate 200 and the center plate are made of the same material, and the radial thermal expansion is basically synchronous, making the horizontal thermal stress F2 almost zero. The edge portion 300 is mainly subjected to the vertical thermal stress F1 of the spray plate 200, and there is a free expansion margin above the edge portion 300. Therefore, it will not be subjected to the co-directional squeezing thermal stress jointly acting on the center plate and the spray plate 200, which can significantly improve the service life of the edge portion 300, and thus avoid vertical stress deformation and cracking, improving the airtightness of its connection.

[0100] In one embodiment, the outermost circumference of the edge portion 300 has a second outer end face 301, and the outermost circumference of the spray plate 200 has a first outer end face 201. In the vertical projection, the second outer end face 301 does not exceed the radial range of the first outer end face 201. Thus, in the projection direction facing the wafer W, only the spray plate 200 is exposed and the back plate 100 above the spray plate 200 is not exposed, so that the wafer W is directly radiatively heated only with the spray plate 200 at a short distance, which is beneficial to improving the uniformity of the surface temperature of the wafer W.

[0101] In one embodiment, the outermost periphery of the center plate has a second outer edge face 111, and the inner circumference of the second extension portion 210 has a first inner end face 202. As Figure 4 shown, the vertical projection of the second outer edge face 111 is radially inside the first inner end face 202. Thus, it is avoided that the vertical stress applied to the edge portion 300 by the gas transmission pipe 30 and the center plate coincides or partially coincides with the vertical stress applied to the edge portion 300 by the second extension portion 210 of the spray plate 200, causing vertical squeezing and pulling of the edge portion 300, thereby improving the service life of the edge portion 300, and thus avoiding vertical deformation and cracking, and improving the airtightness of its connection. At the same time, the above setting can inhibit the heat warping of the back plate 100 and the cracking at the joint, and improve the service life of the back plate 100.

[0102] Thus, the shower head assembly can reduce the heat conduction of the backplane 100 to the outside while making the shower plate 200 and the edge portion 300 easy to disassemble, ensure the service life of the edge portion 300, and ensure the airtightness of the connection. Thereby, it can effectively improve the temperature uniformity of the direct radiation heat exchange area of the shower plate 200 facing the wafer W, and improve the temperature uniformity of the wafer W.

[0103] Some embodiments of the shower substrate 10 of the present invention will be specifically described below.

[0104] In one embodiment, as Figure 6 、 7 shown, the edge portion 300 has a first connection surface 311 and a second connection surface 322. The first connection surface 311 is located at the lower end surface of the edge portion 300 and is used for fitting connection with the second extension portion 210 of the shower plate 200.

[0105] The second connection surface 322 includes the upper end surface of the support flange 320. The upper end surface of the support flange 320 is used for welding and airtight connection with the lower end surface of the first extension portion 110; the second connection surface 322 may also include the inner end surface of the support flange 320. Through the second connection surface 322, the circumferential outer wall of the center plate and the edge portion 300 are integrally welded to form an integral backplane 100, so as to improve the mechanical strength and airtightness of the backplane 100.

[0106] In one embodiment, the upper part of the edge portion 300 has an upper flange 330. The side wall portion 400 is connected to the upper flange 330. There is a fitting gap between the inner side wall of the upper flange 330 and the first extension portion 110, so as to facilitate installation and reserve an expansion margin and reduce heat conduction with the first extension portion 110, so as to reduce the heat transfer from the backplane 100 to the side wall portion 400.

[0107] Optionally, taking into account the fixing strength and airtightness of the edge portion 300 and the center plate, a gap groove 112 is provided at the outer edge of the first extension portion 110. By selecting the width and depth of the gap groove 112, the required heat conduction amount can be selected, so as to have a larger operating space relative to the fitting gap, which is conducive to the fine control of the edge heat conduction amount. At the same time, when it is not desired to leave a gap, solder can be placed in the gap groove 112. The solder has fluidity when heated to fill the fitting gap between the edge portion 300 and the center plate, so that the edge portion 300 and the center plate are integrally and seamlessly welded.

[0108] In one embodiment, as Figure 8 shown, a step portion 340 is formed on the upper flange 330. The lower end of the side wall portion 400 is embedded in the step portion 340 for airtight fixation with the edge portion 300. Thus, it is difficult for the side wall portion 400 to radiate heat exchange with the components below across the edge portion 300, suppressing the direct influence of the side wall portion 400 on the temperature distribution of the shower plate 200.

[0109] The inner side of the sealing edge 500 has a second installation groove 530, and the upper end of the side wall portion 400 is embedded in the second installation groove 530 to be hermetically fixed to the sealing edge 500.

[0110] In one embodiment, on the hermetically fixed surface between the sealing edge 500 and the chamber wall 40, a first sealing ring 511 and a second sealing ring 512 are arranged at radial intervals to enhance the airtightness between the sealing edge 500 and the chamber wall 40.

[0111] In one embodiment, considering that the sealing edge 500 directly faces the atmospheric environment and to avoid its temperature being too high to cause thermal pollution to the atmospheric environment, a cooling channel 521 is arranged in the sealing edge 500 for cooling, and the cooling channel 521 can be sealed by a cooling cover plate 522.

[0112] In one embodiment, as Figure 9 shown, a support column 600 is also connected between the sealing edge 500 and the edge portion 300 to provide a hoisting support force for the sealing edge 500 on the shower head assembly. Thus, the side wall portion 400 can only be used as an airtight wall for isolating the inside and outside of the process chamber without providing a support force. Therefore, the side wall portion 400 can be set to be thin enough and a metal with a low thermal conductivity can be used to further suppress the heat conduction of the back plate 100 to the outside through the side wall portion 400. Preferably, the thickness of the side wall portion 400 does not exceed 2 mm. The support column 600 is a hollow structure with a low thermal conductivity to reduce the heat conduction while ensuring the support strength.

[0113] In one embodiment, as Figure 10 shown, the upper flange 330 has a first fixing hole 331, the lower end of the support column 600 is inserted into the first fixing hole 331 and welded and fixed, and the sealing edge 500 has a second fixing hole 530 passing through it, and the upper end of the support column 600 is fixed in the second fixing hole 530.

[0114] In one embodiment, as Figure 11 shown, a heating device 700 is arranged on the upper surface of the back plate 100, and the heating device 700 heats and controls the temperature of the back plate 100. Preferably, the covered area of the heating device 700 is the area surrounded by the side wall portion 400 to heat and control the temperature of the entire back plate 100.

[0115] In one embodiment, the heating device 700 includes a plurality of sub-heating devices distributed radially. In particular, sub-heating devices that can be independently controlled are provided at the edge portion 300 to separately heat and control the temperature of the edge portion 300, so that after heat transfer from the edge portion 300 and the central plate to the spray plate 200, the temperature on the lower surface of the spray plate 200 can be controlled to be uniform. It can be understood that the plurality of sub-heating devices are spaced apart radially and can be annular heating devices in different radial regions, so as to facilitate different temperature control in the radial direction. Or it can be further formed by splicing a plurality of arc-shaped heating devices, and thus different heating controls can be carried out both in the radial and circumferential directions. Since the thermal conductivity of the edge portion 300 is different from that of the central plate, it is beneficial to provide sub-heating devices that can be independently controlled at the edge portion 300 to achieve uniform temperature of the entire spray plate 200.

[0116] In one embodiment, as Figure 12 shown, the heating device 700 includes a first layer 710, a second layer 720, and a heater 730 sandwiched between the first layer 710 and the second layer 720. The first layer 710 and the second layer 720 play a role in fixing and encapsulating the heater 730.

[0117] Preferably, the first layer 710 is located on the side away from the backplane 100, the second layer 720 is located on the side close to the backplane 100 and is in close contact with the backplane 100, and the thermal conductivity of the first layer 710 is lower than that of the second layer 720. So that more heat of the heater 730 is transferred downward to the backplane 100 rather than overflowing upward to cause heat pollution.

[0118] Optionally, the first layer 710 is alumina ceramic and the second layer is aluminum nitride ceramic.

[0119] In one embodiment, a heat reflection layer is provided on the surface of the first layer 710 in contact with the heater 730 to improve the heating efficiency.

[0120] Optionally, the heating device 700 can be an electric heating wire or a heat radiation device, etc.

[0121] In one embodiment, as Figure 13 shown, the heating device 700 is spaced apart from the side wall portion 400 by a certain distance to reduce the heating of the side wall portion 400. And a temperature control device 810 is provided in the edge portion 300 to directly heat the edge portion 300 and the second extension portion 210 below it through the temperature control device 810. Thus, the temperature control of the edge area of the spray plate 200 can be made more accurate and effective, and heat loss caused by heat dissipation to the outside through the side wall portion 400 and heat pollution to the atmospheric environment can be avoided.

[0122] The temperature control device 810 can be a temperature control fluid channel or an electric heating device, etc., which will not be elaborated here.

[0123] Preferably, the temperature control device 810 is arranged close to one side of the second extension portion 210, so as to further improve the temperature control effect on the edge area of the spray plate 200 and avoid heat loss caused by heat dissipation to the outside through the side wall portion 400 and heat pollution to the atmospheric environment.

[0124] Preferably, a heat insulation portion 820 is arranged in the spaced area between the heating device 700 and the side wall portion 400. The heat insulation portion 820 can be a heat insulation ring or a plurality of circumferentially arranged heat insulation pads, and can be a heat insulation material or a vacuum or hollow heat insulation structure, etc., so as to inhibit the heating effect of the heating device 700 on the side wall portion 400. Avoid heat loss caused by heat dissipation to the outside through the side wall portion 400 and heat pollution to the atmospheric environment.

[0125] In the present invention, the low thermal conductivity of the component is a relative concept, that is, it is lower than the thermal conductivity of the component made of a high thermal conductivity material (such as nickel Ni) adjacent to the component. The low thermal conductivity materials in the present invention can be Hastelloy alloy, stainless steel, heat insulation ceramics, etc. The high thermal conductivity material is preferably nickel Ni.

[0126] Preferably, the material of the edge portion 300 and / or the side wall portion 400 is Hastelloy alloy, so as to have similar metal characteristics to the central plate and the spray plate 200 while having a low thermal conductivity, which is beneficial to connection methods such as welding and avoids difficult and stable airtight jointing.

[0127] It can be understood that in the description of the present invention, the terms "vertical direction", "axial direction", and "up and down" directions are basically the same, and the "radial direction" and "horizontal direction" are basically the same. The "radial direction" emphasizes the vector direction diverging from the center and the distance from the center. The terms "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate the orientation or position relationship based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation to the present invention. In addition, the terms "first", "second", and "third" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance.

[0128] In the description of the present invention, it should be noted that unless otherwise clearly specified and limited, the terms "installation", "connection", and "connection" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection; it can be directly connected, or indirectly connected through an intermediate medium, and it can be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.

[0129] Although the content of the present invention has been described in detail through the above preferred embodiments, it should be recognized that the above description should not be construed as a limitation of the present invention. After those skilled in the art have read the above content, various modifications and alternatives to the present invention will be obvious. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A spraying substrate for forming a gas - equalizing cavity with a spraying plate, characterized in that, it includes a back plate, a side wall portion and a sealing edge which are integrally and air - tightly connected. A channel for supplying gas by a gas transmission pipeline is formed on the back plate. The back plate includes a central plate and an edge portion which are fixed together. The edge portion is located radially outside the central plate, and the thermal conductivity of the edge portion is lower than that of the central plate. The edge portion is connected with the side wall portion, and a sealing edge is connected above the side wall portion. The sealing edge is used for air - tightly connecting with the chamber wall of the process chamber, so that the whole spraying substrate is air - tightly isolated from the inside and outside of the process chamber.

2. The spray matrix according to claim 1, characterized in that, The edge portion has a supporting edge which is located below the inner circumference of the edge portion. Above the outer circumference of the central plate, there is a first extension portion which is in sealing cooperation with the supporting edge. The first extension portion is laid on the supporting edge and is supported and fixed via the supporting edge.

3. The spraying matrix according to claim 2, characterized in that, There is an inclined transition section below the supporting edge.

4. The spray matrix according to claim 2, wherein The upper part of the edge portion has an upper flange, and the side wall portion is connected to the upper flange. There is a fitting gap between the inner side wall of the upper flange and the first extension portion.

5. The spray matrix according to claim 4, characterized in that, A gap groove is formed on the outer edge of the first extension portion.

6. The spray matrix according to claim 4, wherein, A step portion is formed on the upper flange, and the lower end of the side wall portion is embedded in the step portion to be air - tightly fixed to the edge portion.

7. The spray matrix according to claim 1, characterized in that On the air - tight fixing surface between the sealing edge and the chamber wall, a first sealing ring and a second sealing ring are arranged at radial intervals.

8. The spray matrix according to claim 1, wherein, A cooling channel is arranged inside the sealing edge.

9. The spraying matrix according to claim 1, wherein, A support column is also connected between the sealing edge and the edge portion.

10. The spray matrix according to claim 9, characterized in that, The thickness of the side wall portion does not exceed 2 mm.

11. The spray matrix according to claim 1, characterized in that, A heating device is arranged on the back plate, and the covered area of the heating device is the area surrounded by the side wall portion.

12. The spray matrix according to claim 1, characterized in that, A heating device is arranged on the back plate. The heating device is spaced from the side wall portion by a certain distance to form a spaced area, and a temperature control device is arranged in the edge portion.

13. The spray matrix according to claim 11, characterized in that, The heating device includes a plurality of sub - heating devices distributed radially, and a sub - heating device which can be independently controlled is arranged at the edge portion.

14. The spray matrix according to claim 12, wherein, A heat insulation portion is arranged in the spaced area between the heating device and the side wall portion.

15. The spray matrix according to any one of claims 11-14, characterized in that, The heating device includes a first layer, a second layer and a heater sandwiched between the first layer and the second layer.

16. The spraying matrix according to claim 15, characterized in that, The first layer is located on the side far from the back plate, the second layer is located on the side close to the back plate and is in close contact with the back plate, and the thermal conductivity of the first layer is lower than that of the second layer.

17. The spray matrix according to claim 16, characterized in that, A heat - reflecting layer is arranged on the surface of the first layer in contact with the heater.

18. A spraying head assembly, characterized in that, it includes the spraying substrate according to any one of claims 1 - 17 and a spraying plate. The spraying substrate and the spraying plate form a gas - equalizing cavity. The circumferential edge of the spraying plate has an upward second extension portion, and the second extension portion is air - tightly connected with the installation portion below the edge portion.

19. The showerhead assembly according to claim 18, characterized in that, The materials of the spraying plate and the central plate are nickel.

20. The shower head assembly according to claim 18, characterized in that, The spraying plate has a plurality of spray holes. The spray holes are located in the spray hole area on the spraying plate. The second extension portion is located in the edge area on the spraying plate, and the central plate is at least opposite to the spray hole area.

21. The shower head assembly according to claim 18, wherein, The second extension portion is detachably and fixedly connected to the installation portion through a mounting member.

22. The shower head assembly according to claim 18, wherein, The outermost circumference of the central plate has a second outer edge surface, and the inner circumference of the second extension portion has a first inner end surface. The vertical projection of the second outer edge surface is radially inside the first inner end surface.

23. A semiconductor processing apparatus, including a chamber wall of a process chamber, characterized in that, It further includes a showerhead assembly as described in any one of claims 18 to 22 located within the chamber wall, and a susceptor capable of carrying a wafer located below the showerhead assembly, wherein the showerhead assembly is hermetically connected to the chamber wall.

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