Elastic wave filter and high-frequency module

Abstract

The invention provides an elastic wave filter and a high-frequency module. An elastic wave filter is provided with: a first series arm resonator disposed in a series arm path connecting a first input / output terminal and a second input / output terminal; and a first parallel arm resonator connected between the series arm path and the ground, the first series arm resonator and the first parallel arm resonator each including an elastic wave resonator, a first resonant frequency of the first series arm resonator and a second resonant frequency of the first parallel arm resonator being equal to or less than a low-frequency end of a passband of the elastic wave filter, and a second resonant frequency of the first parallel arm resonator being equal to or less than a low-frequency end of a passband of the elastic wave filter. A first anti-resonant frequency of the first series arm resonator and a second anti-resonant frequency of the first parallel arm resonator are greater than or equal to a high-frequency end of the passband, the first resonant frequency is higher than the second resonant frequency, and the first anti-resonant frequency is higher than the second anti-resonant frequency.

Description

Technical Field

[0001] The present invention relates to an elastic wave filter and a high-frequency module. Background Art

[0002] A filter module including a band-pass filter and a matching resonator is disclosed in Patent Document 1. The passband of the filter is included in the range between the resonance frequency and the anti-resonance frequency of the matching resonator, whereby the impedance of the passband of the filter module can be made inductive.

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2018-088675

[0006] In the filter module disclosed in Patent Document 1, the impedance of the passband can be made inductive by the matching resonator, and thus the matching loss in the case of connection to an external circuit having a capacitive impedance can be reduced. However, sometimes the insertion loss of the matching resonator itself cannot be reduced, and there is a problem that the low loss property of the filter module cannot be ensured. Summary of the Invention

[0007] Problems to be Solved by the Invention

[0008] Therefore, the present invention has been completed to solve the above problems, and an object thereof is to provide an elastic wave filter ensuring low loss property and a high-frequency module including the elastic wave filter.

[0009] Means for Solving the Problems

[0010] In order to achieve the above object, an elastic wave filter according to one aspect of the present invention is a band-pass elastic wave filter, including: a first series arm resonator disposed on a series arm path connecting a first input / output terminal and a second input / output terminal; and a first parallel arm resonator connected between the series arm path and ground. The first series arm resonator and the first parallel arm resonator each include an elastic wave resonator. A first resonance frequency, which is the resonance frequency of the first series arm resonator, and a second resonance frequency, which is the resonance frequency of the first parallel arm resonator, are below the low-frequency end of the passband of the elastic wave filter. A first anti-resonance frequency, which is the anti-resonance frequency of the first series arm resonator, and a second anti-resonance frequency, which is the anti-resonance frequency of the first parallel arm resonator, are above the high-frequency end of the passband. The first resonance frequency is higher than the second resonance frequency, and the first anti-resonance frequency is higher than the second anti-resonance frequency.

[0011] In addition, a high-frequency module according to one aspect of the present invention includes: a mounting substrate having a first main surface and a second main surface facing each other; the above-described surface acoustic wave filter; and a low-noise amplifier, an input terminal of which is connected to the first input / output terminal, the surface acoustic wave filter being disposed on the first main surface and the low-noise amplifier being disposed on the second main surface, and at least a part of the surface acoustic wave filter and the low-noise amplifier overlapping when the mounting substrate is viewed from above.

[0012] Advantages of the Invention

[0013] According to the present invention, it is possible to provide a surface acoustic wave filter and a high-frequency module that ensure low loss characteristics. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 FIG. is a circuit configuration diagram of the surface acoustic wave filter and the high-frequency module according to the embodiment.

[0015] Figure 2A FIG. is a plan view and a cross-sectional view schematically showing a first example of a surface acoustic wave resonator constituting the surface acoustic wave filter according to the embodiment.

[0016] Figure 2B FIG. is a cross-sectional view schematically showing a second example of a surface acoustic wave resonator constituting the surface acoustic wave filter according to the embodiment.

[0017] Figure 2C FIG. is a cross-sectional view schematically showing a third example of a surface acoustic wave resonator constituting the surface acoustic wave filter according to the embodiment.

[0018] Figure 3 FIG. is a graph showing the pass characteristics of the surface acoustic wave filter according to the embodiment and the impedance characteristics of each surface acoustic wave resonator.

[0019] Figure 4 FIG. is a diagram schematically showing the pass characteristics of the surface acoustic wave filter according to the embodiment, and the impedance characteristics of the first series arm resonator and the first parallel arm resonator.

[0020] Figure 5A FIG. is a circuit configuration diagram of the high-frequency module according to the embodiment.

[0021] Figure 5B FIG. is a circuit configuration diagram of the high-frequency module according to the comparative example.

[0022] Figure 6A FIG. is a Smith chart showing the impedance of the passband of the high-frequency modules according to the embodiment and the comparative example.

[0023] Figure 6B FIG. is a graph showing the relationship between the inductance value of the matching inductor of the high-frequency module according to the comparative example and the noise figure.

[0024] Figure 6C It is a graph showing the frequency characteristics of the noise figure related to the embodiments and the comparative examples.

[0025] Figure 7 It is a circuit structure diagram of the surface acoustic wave filter related to Modification 1 of the embodiment.

[0026] Figure 8A It is a circuit structure diagram of the surface acoustic wave filter related to Modification 2 of the embodiment.

[0027] Figure 8B It is a graph showing the pass characteristics of the frequency band near the passband of the surface acoustic wave filter related to Modification 2 and the impedance characteristics of the first parallel arm resonator.

[0028] Figure 8C It is a graph showing the impedance characteristics of the first parallel arm resonator in the wideband of the surface acoustic wave filter related to Modification 2.

[0029] Figure 9 It is a top view and a cross-sectional view of the high-frequency module related to the embodiment.

[0030] Figure 10 It is a circuit structure diagram of the high-frequency module related to Modification 3.

[0031] Figure 11A It is a top view of the high-frequency module related to Modification 3.

[0032] Figure 11B It is a cross-sectional view of the high-frequency module related to Modification 3.

[0033] Figure 12A It is a top view of the high-frequency module related to Modification 4.

[0034] Figure 12B It is a cross-sectional view of the high-frequency module related to Modification 4.

[0035] Figure 13 It is a cross-sectional view of the high-frequency module related to Modification 5.

[0036] Figure 14A It is a top view of the high-frequency module related to Modification 6.

[0037] Figure 14B It is a cross-sectional view of the high-frequency module related to Modification 6.

[0038] Figure 15A It is a circuit structure diagram of the high-frequency module related to Modification 7.

[0039] Figure 15B It is a schematic top view of the high-frequency module related to Modification 7.

[0040] Figure 15C It is a cross-sectional view of the high-frequency module related to Modification Example 7.

[0041] Figure 16A It is a top view of the filter integrated component related to Modification Example 8.

[0042] Figure 16B It is a top view of the filter integrated component related to Modification Example 9.

[0043] Figure 17A It is a circuit structure diagram of the high-frequency module related to Modification Example 10.

[0044] Figure 17B It is a top view of the filter integrated component related to Modification Example 10.

[0045] Figure 18 It is a top view and a cross-sectional view of the filter integrated component related to Modification Example 11.

[0046] Figure 19A It is a circuit structure diagram of the high-frequency module related to Modification Example 12.

[0047] Figure 19B It is a top view of the high-frequency module related to Modification Example 12.

[0048] Figure 20A It is a circuit structure diagram of the high-frequency module related to Modification Example 13.

[0049] Figure 20B It is a top view of the high-frequency module related to Modification Example 13.

[0050] Figure 21A It is a circuit structure diagram of the high-frequency module related to Modification Example 14.

[0051] Figure 21B It is a top view of the high-frequency module related to Modification Example 14.

[0052] Figure 22A It is a circuit structure diagram of the high-frequency module related to Modification Example 15.

[0053] Figure 22B It is a top view of the high-frequency module related to Modification Example 15.

[0054] Figure 23A It is a circuit structure diagram of the high-frequency module related to Modification Example 16.

[0055] Figure 23B It is a top view of the high-frequency module related to Modification Example 16.

[0056] Figure 24A It is a circuit structure diagram of the high-frequency module related to Modification Example 17.

[0057] Figure 24B It is a top view of the high-frequency module related to Modification Example 17.

[0058] Figure 25A It is a circuit structure diagram of the high-frequency module related to Modification Example 18.

[0059] Figure 25B It is a top view of the high-frequency module related to Modification Example 18.

[0060] Figure 26 It is a top view of the high-frequency module related to Modification Example 19.

[0061] Figure 27A It is a circuit structure diagram of the high-frequency module related to Modification Example 20.

[0062] Figure 27B It is a top view of the high-frequency module related to Modification Example 20.

[0063] Figure 28A It is a circuit structure diagram of the high-frequency module related to Modification Example 21.

[0064] Figure 28B It is a top view of the high-frequency module related to Modification Example 21.

[0065] Figure 29A It is a circuit structure diagram of the high-frequency module related to Modification Example 22.

[0066] Figure 29B It is a top view of the high-frequency module related to Modification Example 22.

[0067] Explanation of Reference Numerals

[0068] 1, 1A, 1B, 3A, 3B, 3C, 3D, 3E, 3F, 3G, 3H, 3J, 3K, 3L, 3M, 4A, 4B, 4C, 5A, 5B, 5C, 6A, 6B, 6C, 6D, 8A, 8B, 9A, 9B, 501, 503A, 503B, 503C, 503D, 503E, 503F, 503G, 503H, 503J, 504A, 504B, 504C, 505B: SAW filters;

[0069] 2, 2A, 2B, 2C, 2D, 2E, 2F, 2G, 2H, 2J, 2K, 2L, 2M, 7A, 7B, 7C, 7D, 7E, 7F, 502A, 502B, 502C, 502E, 502F, 502G, 502H, 502J, 507A, 507B, 507C, 507E: Low-noise amplifiers;

[0070] 11, 12, 13, 14, 16: Series-arm resonators;

[0071] 15, 24, 35, 36: Capacitors;

[0072] 16A: Series arm resonator;

[0073] 20, 25A: Shunt arm resonators;

[0074] 21, 22, 23, 25: Shunt arm resonators;

[0075] 32: Parasitic capacitance;

[0076] 41, 41A, 41B, 41C, 41D, 42, 43, 44, 45, 46, 47, 241, 242, 243, 244, 245, 246: Inductors;

[0077] 50, 70: Piezoelectric substrates;

[0078] 51: High acoustic velocity support substrate;

[0079] 52: Low acoustic velocity film;

[0080] 53: Piezoelectric film;

[0081] 54: IDT electrode;

[0082] 55, 58: Protective layers;

[0083] 57: Piezoelectric single crystal substrate;

[0084] 60: Elastic wave resonator;

[0085] 60a, 60b: Comb electrodes;

[0086] 61a, 61b: Electrode fingers;

[0087] 62a, 62b: Busbar electrodes;

[0088] 65: Support substrate;

[0089] 66: Lower electrode;

[0090] 67: Piezoelectric layer;

[0091] 68: Upper electrode;

[0092] 76, 77, 78, 221, 222, 223, 230, 235, 236, 237: Switches;

[0093] 76a, 76b, 77a, 77b: Selection terminals;

[0094] 80, 182, 184, 190, 190A, 190B, 210, 210A, 210B: Integrated circuits;

[0095] 90: Mounting substrate;

[0096] 90a, 90b, 181a, 181b, 182a, 182b, 183a, 183b, 185a, 185b, 186a, 186b, 187a, 187b, 188a, 188b, 189a, 189b, 190a, 190b, 191a, 191b, 192a, 192b, 193a, 193b, 194a, 194b, 195a, 195b, 210a, 210b, 211a, 211b, 212a, 212b, 213a, 213b, 214a, 214b, 383a, 383b, 783a, 783b: Main surface;

[0097] 100, 151, 152, 153, 154, 155, 156, 157, 158, 159, 160, 200, 202, 203, 204, 271, 272, 273, 500: High-frequency module;

[0098] 110, 113, 120, 123, 124, 125, 126, 127, 141, 142, 143, 144, 145, 146, 161, 162, 163, 164, 165, 166, 251, 252, 253, 254, 255, 256, 257, 258, 261, 262, 263, 264, 265, 266, 267, 268, 281, 282, 283, 284, 285, 286, 291, 292, 293, 294, 295, 296, 481, 482, 483, 491, 492, 493, 513, 514, 523, 524, 525, 526, 527, 551, 552, 553, 555, 561, 562, 563, 565: Input / output terminal;

[0099] 113a, 113b, 123a, 123b: Terminal;

[0100] 114, 115, 116, 117, 118: Common terminal;

[0101] 130, 220: Output terminal;

[0102] 131, 132, 133, 134, 135, 136, 137, 138, 140, 171, 172, 173, 174, 175, 176, 240, 533, 534, 571, 572, 573, 575: Input terminal;

[0103] 150, 231, 232, 233: Antenna connection terminal;

[0104] 181, 181A, 181B, 181C, 183, 185, 186, 187, 188, 189, 191, 192, 193, 194, 195, 196, 197, 198, 211, 212, 213, 214, 297, 298: Filter integrated components;

[0105] 224: Switching circuit;

[0106] 300: Via conductor;

[0107] 383, 783: Filter chips;

[0108] 540: Close contact layer;

[0109] 542: Main electrode layer;

[0110] 611, 612, 613, 614, 615, 616, 617, 618, 619, 620, 621: Ground terminals. Detailed implementation mode

[0111] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. In addition, all the embodiments described below show general or specific examples. The numerical values, shapes, materials, constituent elements, arrangements of constituent elements, connection methods, etc. shown in the following embodiments are examples, and their gist is not to limit the present invention. Among the constituent elements in the following embodiments, the constituent elements not described in the independent claims are described as optional constituent elements. In addition, the sizes or size ratios of the constituent elements shown in the drawings are not necessarily precise.

[0112] In addition, each drawing is a schematic diagram that is appropriately emphasized, omitted, or adjusted in proportion for showing the present invention, and is not necessarily precisely drawn, and may be different from the actual shape, positional relationship, and ratio. In each drawing, the same reference numerals are given to substantially the same structures, and repeated explanations may be omitted or simplified.

[0113] In the circuit structure of the present disclosure, "connection" includes not only a case of direct connection through connection terminals and / or wiring conductors, but also a case of electrical connection via matching elements or switching circuits. "Connected between A and B" means connected between A and B and connected to both A and B.

[0114] In the present invention, "terminal" means the end point of a conductor within an element. In addition, when the impedance of the conductor between elements is sufficiently low, the terminal can be interpreted not only as a single point, but also as any point (node) or the entire conductor on the conductor between elements.

[0115] In addition, in the circuit element configuration of the present disclosure, the so-called "circuit element A is serially arranged in path B" means that the signal input terminal and the signal output terminal of circuit element A are respectively connected to two wirings that form at least a part of path B. Additionally, at least one of the two wirings may also be an electrode or a terminal.

[0116] In the following figures, the x-axis and the y-axis are axes orthogonal to each other in a plane parallel to the main surface of the module substrate. Specifically, when the module substrate has a rectangular shape in a top view, the x-axis is parallel to the first side of the module substrate, and the y-axis is parallel to the second side of the module substrate that is orthogonal to the first side. In addition, the z-axis is an axis perpendicular to the main surface of the module substrate, the positive direction thereof represents the upward direction, and the negative direction thereof represents the downward direction.

[0117] In addition, terms indicating the relationality between elements such as "parallel" and "perpendicular", terms indicating the shape of elements such as "rectangular", and numerical ranges do not merely represent strict meanings, but rather mean substantially equivalent ranges, for example, they also include an error of about a few percent.

[0118] In addition, in the component configuration of the present invention, the so-called "top view of the module substrate" means observing an object by orthographically projecting it from the positive side of the z-axis onto the xy plane. The so-called "A overlaps B in a top view" means that at least a part of the region of A orthographically projected onto the xy plane overlaps at least a part of the region of B orthographically projected onto the xy plane. In addition, the so-called "A is arranged between B and C" means that at least one of the multiple line segments connecting any point in B and any point in C passes through A.

[0119] In the component configuration of the present invention, the so-called "a component is arranged on a substrate" includes a component being arranged on the main surface of the substrate and a component being arranged inside the substrate. The so-called "a component is arranged on the main surface of the substrate" includes, in addition to the component being arranged in contact with the main surface of the substrate, the component being arranged above the main surface without contacting the main surface (for example, the component is stacked on another component arranged in contact with the main surface). In addition, the so-called "a component is arranged on the main surface of the substrate" may also include a component being arranged in a recess formed in the main surface. The so-called "a component is arranged inside the substrate" includes, in addition to the component being encapsulated inside the module substrate, all of the component being arranged between the two main surfaces of the substrate but a part of the component not being covered by the substrate, and only a part of the component being arranged inside the substrate.

[0120] In addition, in the following embodiments, the passband of the filter is defined as the frequency band between two frequencies that are 3 dB greater than the minimum value of the insertion loss within the passband.

[0121] In addition, an elastic wave resonator is defined as any one of the following resonant circuits: (1) a resonant circuit (parallel connection circuit of an elastic wave resonator and a circuit (or circuit element)) constituted by an elastic wave resonator and a circuit (or circuit element) connected in parallel with the elastic wave resonator; (2) a resonant circuit (series connection circuit of an elastic wave resonator and a circuit (or circuit element)) constituted by an elastic wave resonator and a circuit (or circuit element) connected to only one of two input / output terminals of the elastic wave resonator, and having a structure in which no other circuit (and other circuit element) and ground are connected to a connection node connecting the elastic wave resonator and the circuit (or circuit element); (3) a resonant circuit (parallel connection circuit of divided resonators) constituted by a plurality of elastic wave resonators connected in parallel with each other; and (4) a resonant circuit (series connection circuit of divided resonators) constituted by a plurality of elastic wave resonators connected in series with each other, and having a structure in which no circuit (and circuit element) other than the plurality of elastic wave resonators and ground are connected to a connection node connecting between the plurality of elastic wave resonators).

[0122] In addition, in an embodiment of the present disclosure, the resonance bandwidth means the frequency difference between the anti-resonance frequency and the resonance frequency of the elastic wave resonator.

[0123] In addition, the resonance frequency and the anti-resonance frequency shown in the above embodiment and the modification example are derived, for example, by bringing an RF probe into contact with two input / output electrodes of the elastic wave resonator or the elastic wave resonator in a state where the elastic wave resonator or the elastic wave resonator is not connected to other circuit elements, and measuring the reflection characteristics (impedance characteristics) with a network analyzer or the like.

[0124] In addition, in the present disclosure, the so-called "frequency band" means at least one of the uplink operating frequency band and the downlink operating frequency band of a frequency band predefined for a communication system constructed for using a radio access technology (RAT) by a standardization organization or the like (for example, 3GPP (registered trademark), IEEE (Institute of Electrical and Electronics Engineers), etc.). In the present embodiment, as the communication system, for example, an LTE (Long Term Evolution) system, a 5G (5th Generation)-NR (New Radio) system, a WLAN (Wireless Local Area Network) system, etc. can be used, but it is not limited to these. In addition, the so-called uplink operating frequency band of the frequency band means the frequency range designated for uplink use among the frequency band. Further, the so-called downlink operating frequency band of the frequency band means the frequency range designated for downlink use among the frequency band.

[0125] (Embodiment)

[0126] [1 Circuit Structure of SAW Filter 1 and High-Frequency Module 100]

[0127] Figure 1 FIG. is a circuit structure diagram of the SAW filter 1 and the high-frequency module 100 according to the embodiment. As shown in this figure, the high-frequency module 100 includes a SAW filter 1, a low-noise amplifier 2, and an output terminal 130.

[0128] The low-noise amplifier 2 is connected between the SAW filter 1 and the output terminal 130. Specifically, the input terminal of the low-noise amplifier 2 is connected to the input / output terminal 120 of the SAW filter 1. The low-noise amplifier 2 includes, for example, an amplification transistor as a field effect transistor (FET) or a bipolar transistor. The gate (or base) of the amplification transistor is connected to the input / output terminal 120, the drain (or collector) is connected to the output terminal 130, and the source (or emitter) is connected to the ground. Further, a DC bias voltage (DC bias current) is supplied to the gate (or base) of the above amplification transistor. With the above structure, the low-noise amplifier 2 has a DC bias voltage (DC bias current) supplied to the gate (or base), thereby amplifying the high-frequency signal that has passed through the SAW filter 1 and outputting it to the output terminal 130. In addition, the input impedance of the low-noise amplifier 2 becomes capacitive and high impedance.

[0129] The elastic wave filter 1 is a band-pass filter (band-pass filter), and includes series arm resonators 11, 12, 13, and 14, shunt arm resonators 21, 22, and 23, capacitors 15 and 24, and input / output terminals 110 and 120.

[0130] The series arm resonators 11 to 14 are each an example of an elastic wave resonator including an elastic wave resonator, and are arranged in a series arm path connecting the input / output terminal 110 (second input / output terminal) and the input / output terminal 120 (first input / output terminal). The series arm resonator 11 consists of only the series arm resonator 11 to form one series arm resonator (elastic wave resonator), the series arm resonator 12 consists of only the series arm resonator 12 to form one series arm resonator (elastic wave resonator), the series arm resonator 13 consists of only the series arm resonator 13 to form one series arm resonator (elastic wave resonator), and the series arm resonator 14 consists of only the series arm resonator 14 to form one series arm resonator (elastic wave resonator). The capacitor 15 is an example of a first capacitor and is connected in series to the above series arm path.

[0131] The series arm resonators 11 to 14 and the capacitor 15 are connected in sequence from the input / output terminal 110 in the order of the series arm resonator 11, the capacitor 15, the series arm resonators 12, 13, and 14.

[0132] The shunt arm resonators 21 to 23 are each an example of an elastic wave resonator including an elastic wave resonator, and are connected between the above series arm path and the ground. The shunt arm resonator 21 is connected between the connection point of the series arm resonator 11 and the capacitor 15 and the ground. The shunt arm resonator 22 is connected between the connection point of the capacitor 15 and the series arm resonator 12 and the ground. The shunt arm resonator 21 consists of only the shunt arm resonator 21 to form one shunt arm resonator (elastic wave resonator), the shunt arm resonator 22 consists of only the shunt arm resonator 22 to form one shunt arm resonator (elastic wave resonator), and the shunt arm resonator 23 consists of only the shunt arm resonator 23 to form one shunt arm resonator (elastic wave resonator). The capacitor 24 is an example of a second capacitor and is connected in series to a shunt arm path connecting the series arm path between the series arm resonators 12 and 13 and the ground. The shunt arm resonator 23 is connected between the connection point of the series arm resonators 13 and 14 and the ground.

[0133] Among the series arm resonators 11 to 14, the series arm resonator 14 is an example of a first series arm resonator, and has a resonance frequency frs14 (first resonance frequency) and an anti-resonance frequency fas14 (first anti-resonance frequency).

[0134] Among the parallel-arm resonators 21 to 23, the parallel-arm resonator 23 is an example of the first parallel-arm resonator, having a resonance frequency frp23 (the second resonance frequency) and an anti-resonance frequency fap23 (the second anti-resonance frequency).

[0135] In addition, each of the series-arm resonators 11 to 14 and the parallel-arm resonators 21 to 23 (the elastic-wave resonators) has only one elastic-wave resonator, but each of the series-arm resonators 11 to 14 and the parallel-arm resonators 21 to 23 may also be any one of the following resonators, for example: (1) a resonator composed of an elastic-wave resonator and a circuit including at least one of a capacitor and an inductor connected in parallel with the elastic-wave resonator; (2) a resonator composed of an elastic-wave resonator and a circuit including at least one of a capacitor and an inductor connected in series with the elastic-wave resonator; (3) a resonator composed of a plurality of elastic-wave resonators connected in parallel; and (4) a resonator composed of a plurality of elastic-wave resonators connected in series.

[0136] In addition, the elastic-wave filter 1 according to the present embodiment only needs to include one or more series-arm resonators including the series-arm resonator 14 and one or more parallel-arm resonators including the parallel-arm resonator 23, and may not have other elastic-wave resonators and capacitors.

[0137] In addition, the elastic-wave filter 1 according to the present embodiment may also include a longitudinal-coupling resonator in addition to the series-arm resonator and the parallel-arm resonator constituting the ladder-type filter.

[0138] [Structure of Elastic-Wave Resonator]

[0139] Next, the structures of the elastic-wave resonators (series-arm resonators and parallel-arm resonators) constituting the elastic-wave filter 1 are illustrated.

[0140] Figure 2A are a top view and a cross-sectional view schematically showing a first example of the elastic-wave resonators constituting the elastic-wave filter 1 according to the embodiment. In this figure, the basic structures of the plurality of elastic-wave resonators constituting the elastic-wave filter 1 are illustrated. In addition, Figure 2A The shown elastic-wave resonator 60 is used to illustrate the typical structure of the surface acoustic wave resonator constituting the elastic-wave filter 1, and the number and length of the electrode fingers constituting the electrode are not limited thereto.

[0141] The elastic-wave resonator 60 is composed of a piezoelectric substrate 50 and comb-shaped electrodes 60a and 60b.

[0142] As Figure 2AAs shown in (a) of the figure, a pair of comb-shaped electrodes 60a and 60b facing each other are formed on a piezoelectric substrate 50. The comb-shaped electrode 60a is composed of a plurality of electrode fingers 61a parallel to each other and a bus bar electrode 62a connecting the plurality of electrode fingers 61a. In addition, the comb-shaped electrode 60b is composed of a plurality of electrode fingers 61b parallel to each other and a bus bar electrode 62b connecting the plurality of electrode fingers 61b. The plurality of electrode fingers 61a and 61b are formed along a direction orthogonal to the elastic wave propagation direction (X-axis direction).

[0143] In addition, as Figure 2A shown in (b) of the figure, the IDT electrode 54 composed of the plurality of electrode fingers 61a and 61b and the bus bar electrodes 62a and 62b has a laminated structure of a close contact layer 540 and a main electrode layer 542.

[0144] The close contact layer 540 is a layer for improving the close contact property between the piezoelectric substrate 50 and the main electrode layer 542, and for example, Ti is used as the material. The main electrode layer 542 uses, for example, Al containing 1% of Cu as the material. The protective layer 55 is formed to cover the comb-shaped electrodes 60a and 60b. The protective layer 55 is a layer for protecting the main electrode layer 542 from the influence of the external environment, adjusting the frequency-temperature characteristics, and improving the moisture resistance, etc. For example, it is a dielectric film mainly composed of silicon dioxide.

[0145] In addition, the materials constituting the close contact layer 540, the main electrode layer 542, and the protective layer 55 are not limited to the above-mentioned materials. Furthermore, the IDT electrode 54 may not be the above-mentioned laminated structure. The IDT electrode 54 may be composed of metals or alloys such as Ti, Al, Cu, Pt, Au, Ag, Pd, etc. In addition, it may be composed of a plurality of laminates composed of the above-mentioned metals or alloys. In addition, the protective layer 55 may not be formed.

[0146] Next, the laminated structure of the piezoelectric substrate 50 will be described.

[0147] As Figure 2A shown in (c) of the figure, the piezoelectric substrate 50 includes a high acoustic velocity support substrate 51, a low acoustic velocity film 52, and a piezoelectric film 53, and has a structure in which the high acoustic velocity support substrate 51, the low acoustic velocity film 52, and the piezoelectric film 53 are laminated in sequence.

[0148] The piezoelectric film 53 includes, for example, a θ°Y-cut X-propagating LiTaO3 piezoelectric single crystal or a piezoelectric ceramic (a lithium tantalate single crystal or ceramic cut on a plane with an axis rotated by θ° from the Y-axis around the X-axis as the normal axis, and a single crystal or ceramic in which surface acoustic waves propagate in the X-axis direction). In addition, the material and the cut angle θ of the piezoelectric single crystal used as the piezoelectric film 53 can be appropriately selected according to the required specifications of each filter.

[0149] The high acoustic velocity supporting substrate 51 is a substrate that supports the low acoustic velocity film 52, the piezoelectric film 53, and the IDT electrode 54. Furthermore, the high acoustic velocity supporting substrate 51 is a substrate in which the acoustic velocity of the bulk wave in the high acoustic velocity supporting substrate 51 is higher than that of the surface wave, the boundary wave, and other elastic waves propagating in the piezoelectric film 53, and functions to confine the surface acoustic wave in the portion where the piezoelectric film 53 and the low acoustic velocity film 52 are laminated without leaking to below the high acoustic velocity supporting substrate 51. As the material of the high acoustic velocity supporting substrate 51, for example, piezoelectric materials such as aluminum nitride, lithium tantalate, lithium niobate, and quartz, ceramics such as alumina, sapphire, magnesia, silicon nitride, silicon carbide, zirconia, cordierite, mullite, steatite, forsterite, spinel, and sialon, dielectrics such as aluminum oxide, silicon oxynitride, DLC (diamond-like carbon), and diamond, semiconductors such as silicon, or materials mainly composed of the above materials can be used. In addition, the above spinel contains an aluminum compound containing one or more elements selected from Mg, Fe, Zn, Mn, etc. and oxygen. Examples of the above spinel include MgAl2O4, FeAl2O4, ZnAl2O4, and MnAl2O4.

[0150] The low acoustic velocity film 52 is a film in which the acoustic velocity of the bulk wave in the low acoustic velocity film 52 is lower than that of the bulk wave propagating in the piezoelectric film 53, and is disposed between the piezoelectric film 53 and the high acoustic velocity supporting substrate 51. According to this structure and the property that the energy of the elastic wave is essentially concentrated in the medium with low acoustic velocity, the leakage of the surface acoustic wave energy outside the piezoelectric film 53 can be suppressed. As the material of the low acoustic velocity film 52, for example, dielectrics such as glass, silicon oxide, silicon oxynitride, lithium oxide, tantalum oxide, or a compound obtained by adding fluorine, carbon, or boron to silicon oxide, or materials mainly composed of the above materials can be used.

[0151] In addition, according to the above laminated structure of the piezoelectric substrate 50, compared with the conventional structure in which a piezoelectric substrate is used as a single layer, the Q value at the resonance frequency and the anti-resonance frequency can be significantly increased. That is, an elastic wave resonator with a high Q value can be formed, and thus a filter with a small insertion loss can be formed using this elastic wave resonator.

[0152] In addition, the high acoustic velocity supporting substrate 51 may also have a structure in which a supporting substrate and a high acoustic velocity film in which the acoustic velocity of the bulk wave propagated is higher than that of the surface wave, the boundary wave, and other elastic waves propagating in the piezoelectric film 53 are laminated. In this case, as the material of the high acoustic velocity film, the same material as that of the high acoustic velocity supporting substrate 51 can be used. In addition, as the material of the supporting substrate, for example, piezoelectric materials such as aluminum nitride, lithium tantalate, lithium niobate, and quartz, ceramics such as alumina, sapphire, magnesia, silicon nitride, silicon carbide, zirconia, cordierite, mullite, steatite, and forsterite, dielectrics such as diamond and glass, semiconductors such as silicon and gallium nitride, or resins, or materials mainly composed of the above materials can be used.

[0153] In addition, in this specification, the so-called "main component of the material" refers to a component that accounts for more than 50% by weight in the material. The above-mentioned main component can also exist in any state of single crystal, polycrystal, and amorphous, or a state in which they coexist.

[0154] Figure 2B It is a cross-sectional view schematically showing a second example of the elastic wave resonator constituting the elastic wave filter 1 according to the embodiment. In Figure 2A In the shown elastic wave resonator 60, an example is shown in which the IDT electrode 54 is formed on the piezoelectric substrate 50 having the piezoelectric film 53, but the substrate on which the IDT electrode 54 is formed can also be as Figure 2B shown as a single-layer piezoelectric single crystal substrate 57 including a piezoelectric body layer.

[0155] The piezoelectric single crystal substrate 57 is composed of a piezoelectric single crystal of LiNbO3, for example. The elastic wave resonator according to this example is composed of a piezoelectric single crystal substrate 57 of LiNbO3, an IDT electrode 54, and a protective layer 58 formed on the piezoelectric single crystal substrate 57 and the IDT electrode 54.

[0156] The above-mentioned piezoelectric film 53 and piezoelectric single crystal substrate 57 can also be appropriately changed in terms of the layer structure, material, cutting angle, and thickness according to the requirements and characteristics of the elastic wave filter device. Even for an elastic wave resonator using a LiTaO3 piezoelectric substrate or the like having a cutting angle other than the above-mentioned cutting angle, the same effect as that of the elastic wave resonator 60 using the above-mentioned piezoelectric film 53 can be obtained.

[0157] In addition, the substrate on which the IDT electrode 54 is formed can also have a structure in which a support substrate, an energy confinement layer, and a piezoelectric film are laminated in sequence. The IDT electrode 54 is formed on the piezoelectric film. The piezoelectric film uses a piezoelectric single crystal of LiTaO3 or a piezoelectric ceramic, for example. The support substrate is a substrate that supports the piezoelectric film, the energy confinement layer, and the IDT electrode 54.

[0158] The energy confinement layer includes one or more layers, and the velocity of the bulk acoustic wave propagating in at least one of its layers is greater than the velocity of the elastic wave propagating near the piezoelectric film. For example, the energy confinement layer can also have a laminated structure of a low acoustic velocity layer and a high acoustic velocity layer. The low acoustic velocity layer is a film in which the velocity of the bulk wave in the low acoustic velocity layer is lower than the acoustic velocity of the elastic wave propagating in the piezoelectric film. The high acoustic velocity layer is a film in which the velocity of the bulk wave in the high acoustic velocity layer is higher than the acoustic velocity of the elastic wave propagating in the piezoelectric film. In addition, the support substrate can also be used as the high acoustic velocity layer.

[0159] In addition, the energy confinement layer can also be an acoustic impedance layer having a structure in which a low acoustic impedance layer having a relatively low acoustic impedance and a high acoustic impedance layer having a relatively high acoustic impedance are alternately laminated.

[0160] Here, electrode parameters of IDT electrode 54 constituting elastic wave resonator 60 will be described.

[0161] The wavelength of the elastic wave resonator is composed of Figure 2A The repetition period of the multiple electrode fingers 61a or 61b of the IDT electrode 54 shown in (b) is defined by the wavelength λ. Furthermore, the electrode finger pitch is ½ the wavelength λ and is defined as (W + S), where the line width of the electrode fingers 61a and 61b that constitute the comb-shaped electrodes 60a and 60b, respectively, is W, and the spacing between adjacent electrode fingers 61a and 61b is S. Furthermore, the duty ratio of the IDT electrode 54 is the line width occupancy of the electrode fingers 61a and 61b, which is the ratio of the line width of each electrode finger 61a or 61b to the sum of the line width and spacing, and is defined as W / (W + S). Furthermore, the crossover width of the IDT electrode 54 is the length of the overlapping electrode fingers when viewing the electrode fingers 61a and 61b from the direction of elastic wave propagation (the X-axis direction).

[0162] In the case where the spacing between adjacent electrode fingers in the IDT electrode 54 is not constant, the electrode finger pitch of the IDT electrode 54 is defined by the average electrode finger pitch of the IDT electrode 54. Assuming the total number of electrode fingers 61 a and 61 b included in the IDT electrode 54 is Ni, and the center-to-center distance between an electrode finger at one end of the IDT electrode 54 and an electrode finger at the other end in the direction of elastic wave propagation is Di, the average electrode finger pitch of the IDT electrode 54 is defined as Di / (Ni-1).

[0163] also, Figure 2C : is a cross-sectional view schematically showing a third example of the elastic wave resonator constituting the elastic wave filter 1 according to the embodiment. Figure 2C , a bulk acoustic wave resonator is shown as the elastic wave resonator of the elastic wave filter 1. As shown in the figure, the bulk acoustic wave resonator includes, for example, a support substrate 65, a lower electrode 66, a piezoelectric layer 67, and an upper electrode 68. The support substrate 65, the lower electrode 66, the piezoelectric layer 67, and the upper electrode 68 are stacked in this order.

[0164] The support substrate 65 is a substrate, such as a silicon substrate, that supports the lower electrode 66, the piezoelectric layer 67, and the upper electrode 68. Furthermore, the support substrate 65 has a cavity in the region in contact with the lower electrode 66. This allows the piezoelectric layer 67 to vibrate freely.

[0165] The lower electrode 66 is formed on one surface of the support substrate 65. The upper electrode 68 is formed on one surface of the support substrate 65. The lower electrode 66 and the upper electrode 68 use, for example, Al containing 1% of Cu as the material.

[0166] The piezoelectric layer 67 is formed between the lower electrode 66 and the upper electrode 68. The piezoelectric layer 67 has, for example, at least one of ZnO (zinc oxide), AlN (aluminum nitride), PZT (lead zirconate titanate), KN (potassium niobate), LN (lithium niobate), LT (lithium tantalate), quartz, and LiBO (lithium borate) as the main component.

[0167] The bulk acoustic wave resonator constituting the above laminated structure generates resonance by applying electric energy between the lower electrode 66 and the upper electrode 68 to generate a bulk acoustic wave in the piezoelectric layer 67. The bulk acoustic wave generated by this bulk acoustic wave resonator propagates in a direction perpendicular to the film surface of the piezoelectric layer 67 between the lower electrode 66 and the upper electrode 68. That is, the bulk acoustic wave resonator is a resonator that utilizes the bulk acoustic wave.

[0168] [3 Resonant characteristics and transmission characteristics of the elastic wave filter 1]

[0169] First, the basic operating principle of a ladder bandpass filter composed of one series-arm resonator and one shunt-arm resonator will be described in advance.

[0170] The shunt-arm resonator has a resonant frequency frp and an anti-resonant frequency fap (> frp), and the series-arm resonator has a resonant frequency frs and an anti-resonant frequency fas (> frs > frp). In the series-arm resonator and the shunt-arm resonator having the above resonant characteristics, generally, the anti-resonant frequency fap of the shunt-arm resonator and the resonant frequency frs of the series-arm resonator are made close. As a result, the low-frequency side stopband is formed near the resonant frequency frp where the impedance of the shunt-arm resonator approaches 0. In addition, if the frequency increases compared to this, near the anti-resonant frequency fap, the impedance of the shunt-arm resonator becomes high, and near the resonant frequency frs, the impedance of the series-arm resonator approaches 0. As a result, in the vicinity of the anti-resonant frequency fap to the resonant frequency frs, a signal passband is formed in the signal path as the series-arm path. Thus, a passband reflecting the electrode parameters and the electromechanical coupling coefficient of the elastic wave resonator can be formed. Furthermore, if the frequency becomes high and reaches the vicinity of the anti-resonant frequency fas, the impedance of the series-arm resonator becomes high, and a high-frequency side stopband is formed.

[0171] In addition, in each of the series-arm resonators and the shunt-arm resonators, in a frequency band on the lower-frequency side than the resonance frequency, the impedance of the resonator shows capacitive (C-type), and in a frequency band on the higher-frequency side than the resonance frequency and on the lower-frequency side than the anti-resonance frequency, the impedance of the resonator shows inductive (L-type). Further, in a frequency band on the higher-frequency side than the anti-resonance frequency, the impedance of the resonator shows capacitive.

[0172] Alternatively, when the resonance bandwidth is wider than the desired passband width, the anti-resonance frequency of the shunt-arm resonator may be higher than the high-frequency end of the passband, and the resonance frequency of the series-arm resonator may be lower than the low-frequency end of the passband. A resonator in which at least a part of the frequency range from the resonance frequency to the anti-resonance frequency, i.e., the resonance band, overlaps with the passband of the surface acoustic wave filter 1 is defined as a resonator contributing to the formation of the passband of the surface acoustic wave filter 1.

[0173] Next, the impedance characteristics and the transmission characteristics of the surface acoustic wave filter 1 will be described.

[0174] Figure 3 It is a graph showing the transmission characteristics of the surface acoustic wave filter 1 according to the embodiment and the impedance characteristics of the respective surface acoustic wave resonators. As shown in this figure, the passband width (10 MHz) of the surface acoustic wave filter 1 is narrow-band compared with the resonance bandwidth (80 to 100 MHz) of each surface acoustic wave resonator. The surface acoustic wave filter 1 has, for example, a passband including a downlink operating frequency band (2350 to 2360 MHz) of frequency band B30 for LTE or frequency band n30 for 5G-NR.

[0175] The passband (2350 to 2360 MHz) of the surface acoustic wave filter 1 according to the present embodiment is located between the resonance frequency and the anti-resonance frequency of each of the series-arm resonators 12 to 14, and is also located between the resonance frequency and the anti-resonance frequency of each of the shunt-arm resonators 21 to 23.

[0176] That is, since at least a part of the resonance band of the series-arm resonators 12 to 14 and the shunt-arm resonators 21 to 23 overlaps with the passband of the surface acoustic wave filter 1, they are resonators contributing to the formation of the passband of the surface acoustic wave filter 1.

[0177] On the other hand, since both the resonance frequency and the anti-resonance frequency of the series-arm resonator 11 are higher than the high-frequency end of the passband, it is a resonator that does not contribute to the formation of the passband of the surface acoustic wave filter 1.

[0178] Alternatively, surface acoustic wave resonators can be disposed in place of capacitors 15 and 24. The resonance bandwidths of series arm resonators 12 to 14 and parallel arm resonators 21 to 23 are wider than the desired passband width of surface acoustic wave filter 1. In contrast, in surface acoustic wave filter 1 according to the present embodiment, by disposing capacitors 15 and 24, it becomes easy to form a narrow passband using surface acoustic wave resonators having a wide resonance bandwidth.

[0179] In addition, since the resonance bandwidths (80 to 100 MHz) of the respective surface acoustic wave resonators are the same, all the surface acoustic wave resonators constituting surface acoustic wave filter 1 can be formed on a single piezoelectric substrate. Thereby, surface acoustic wave filter 1 can be miniaturized.

[0180] Figure 4 FIG. is a diagram schematically showing the transmission characteristics of surface acoustic wave filter 1 according to the embodiment and the impedance characteristics of series arm resonator 14 (first series arm resonator) and parallel arm resonator 23 (first parallel arm resonator).

[0181] As shown in this figure, the resonance frequency frs14 (first resonance frequency) of series arm resonator 14 (first series arm resonator) and the resonance frequency frp23 (second resonance frequency) of parallel arm resonator 23 (first parallel arm resonator) are below the low frequency end of the passband of surface acoustic wave filter 1. In addition, the anti-resonance frequency fas14 (first anti-resonance frequency) of series arm resonator 14 (first series arm resonator) and the anti-resonance frequency fap23 (second anti-resonance frequency) of parallel arm resonator 23 (first parallel arm resonator) are above the high frequency end of the above passband.

[0182] That is, the resonance band of series arm resonator 14 comes to include the passband of surface acoustic wave filter 1, and the impedance of series arm resonator 14 becomes inductive over the passband. In addition, the resonance band of parallel arm resonator 23 comes to include the passband of surface acoustic wave filter 1, and the impedance of parallel arm resonator 23 becomes inductive over the passband.

[0183] Furthermore, the resonance frequency frs14 is higher than the resonance frequency frp23, and the anti-resonance frequency fas14 is higher than the anti-resonance frequency fap23.

[0184] That is, among the resonance frequencies frs14 and frp23 at which the impedance becomes minimum, the resonance frequency frs14 is closer to the passband, and among the anti-resonance frequencies fas14 and fap23 at which the impedance becomes maximum, the anti-resonance frequency fas14 is farther from the passband. Thereby, in the inductive impedance band of series arm resonator 14, the low impedance band overlaps with the passband, and in the inductive impedance band of parallel arm resonator 23, the high impedance band overlaps with the passband.

[0185] Figure 5A is the circuit structure diagram of the high-frequency module 100 according to the embodiment. In addition, Figure 5B is the circuit structure diagram of the high-frequency module 500 according to the comparative example. In addition, Figure 6A is a Smith chart showing the impedance of the frequency band (1800 - 2800 MHz) of the passband including the high-frequency modules according to the embodiment and the comparative example.

[0186] In addition, as Figure 5A shown, the high-frequency module 100 according to the present embodiment may also be provided with an input terminal 140 and an inductor 42 for obtaining impedance matching with an external circuit connected to the input terminal 140.

[0187] On the other hand, the high-frequency module 500 according to the comparative example includes a surface acoustic wave filter 501, a low-noise amplifier 2, inductors 41 and 43, an input terminal 140, and an output terminal 130. The surface acoustic wave filter 501 has the same circuit structure as the surface acoustic wave filter 1, and has 4 series-arm resonators, 3 parallel-arm resonators, and 2 capacitors. However, the resonance frequencies of the above 4 series-arm resonators are each within the passband of the surface acoustic wave filter 501, and the anti-resonance frequencies of the above 3 parallel-arm resonators are each within the passband of the surface acoustic wave filter 501. Due to this and the structure of the surface acoustic wave resonator (IDT electrode structure or piezoelectric film stack structure), the impedance in the passband of the surface acoustic wave filter 501 tends to be capacitive. Thus, by disposing an inductor 41 having an inductive impedance between the low-noise amplifier 2 having a capacitive input impedance and the surface acoustic wave filter 501, it is possible to achieve matching of both with a reference impedance. However, when an inductor 41 is disposed between the low-noise amplifier 2 and the surface acoustic wave filter 501, a parasitic capacitance 32 due to the wiring of the inductor 41 is generated near the input terminal of the low-noise amplifier 2.

[0188] As Figure 6A shown, the impedance of the passband of the low-noise amplifier 2 observed from node A becomes a capacitive impedance (A).

[0189] In contrast, in the high-frequency module 500 according to the comparative example, by additionally connecting the parasitic capacitance 32 in parallel, the impedance of the frequency band (1800 - 2800 MHz) of the low-noise amplifier 2 observed from node B moves clockwise on the constant conductance circle as Figure 6A shown and becomes a higher capacitive impedance (B). In addition, the impedance of the frequency band (1800 - 2800 MHz) of the surface acoustic wave filter 501, inductor 41, and low-noise amplifier 2 observed from node C2 moves clockwise with respect to the impedance (B) on the constant resistance circle (hereinafter, denoted as the constant resistance circle RB) as Figure 6A shown and becomes the impedance (C2).

[0190] On the other hand, in the high-frequency module 100 according to the present embodiment, since the inductor 41 for impedance matching is not attached, the impedance of the frequency bands (1800 to 2800 MHz) of the surface acoustic wave filter 1 and the low-noise amplifier 2 as observed from the node C1 is as Figure 6A shown to move clockwise on an equal-resistance circle having a higher resistance than the equal-resistance circle RB with respect to the impedance (A), becoming the impedance (C1).

[0191] Accordingly, as Figure 6A shown, in the high-frequency module 500 according to the comparative example, due to the parasitic capacitance 32 generated by the attachment of the inductor 41, the impedance of the passband as observed from the input side of the surface acoustic wave filter 501 becomes a low impedance as compared with the high-frequency module 100 according to the embodiment, deviating from the reference impedance.

[0192] That is to say, in the present embodiment, the impedance in the passband of the surface acoustic wave filter 1 can be made inductive, so that the impedance of the high-frequency module 100 can be made close to the reference impedance without attaching the inductor 41. Therefore, the matching loss of the surface acoustic wave filter 1 and the high-frequency module 100 can be reduced, and the high-frequency module 100 can be miniaturized.

[0193] Furthermore, as described above, the resonance frequency frs14 is higher than the resonance frequency frp23, and the anti-resonance frequency fas14 is higher than the anti-resonance frequency fap23. Accordingly, a low-impedance band in the inductive impedance band of the series-arm resonator 14 overlaps with the passband, and a high-impedance band in the inductive impedance band of the shunt-arm resonator 23 overlaps with the passband. Thereby, the insertion loss of the surface acoustic wave filter 1 can be reduced.

[0194] Therefore, it is possible to provide the surface acoustic wave filter 1 and the high-frequency module 100 that ensure low loss characteristics from the viewpoints of both the matching loss and the insertion loss.

[0195] In addition, in the surface acoustic wave filter 1 according to the present embodiment, the first series-arm resonator (series-arm resonator 14) is connected closest to the input / output terminal 120 among the plurality of series-arm resonators, and the first shunt-arm resonator (shunt-arm resonator 23) is connected closest to the input / output terminal 120 among the plurality of shunt-arm resonators.

[0196] Accordingly, the resonator having an inductive impedance in the passband is arranged closest to the input terminal of the low-noise amplifier 2 having a capacitive impedance, so that the impedance matching between the surface acoustic wave filter 1 and the low-noise amplifier 2 can be made to coincide with high efficiency and high precision.

[0197] In addition, the first series-arm resonator may not be the series-arm resonator 14, and may be any one of the series-arm resonators 11 to 13. Further, the first parallel-arm resonator may not be the parallel-arm resonator 23, and may be the parallel-arm resonator 21 or 22. That is to say, the first series-arm resonator may not be connected closest to the input / output terminal 120 among the plurality of series-arm resonators, and further, the first parallel-arm resonator may not be connected closest to the input / output terminal 120 among the plurality of parallel-arm resonators. In this case, the impedance in the passband of the surface acoustic wave filter 1 can be made inductive, so that the matching loss of the surface acoustic wave filter 1 and the high-frequency module 100 can be reduced, and the high-frequency module 100 can be miniaturized.

[0198] In addition, the surface acoustic wave filter 1 according to the present embodiment only needs to include at least one first series-arm resonator and one first parallel-arm resonator. That is to say, in the surface acoustic wave filter 1 according to the present embodiment, the resonance bands of the series-arm resonators 11 to 13 and the parallel-arm resonators 21 to 22 may not include the passband.

[0199] In addition, in the surface acoustic wave filter according to the present invention, among the plurality of surface acoustic wave resonators, it is preferable that the number of surface acoustic wave resonators whose resonance frequency is below the low-frequency end of the passband and whose anti-resonance frequency is above the high-frequency end of the passband is larger than the number of surface acoustic wave resonators whose resonance frequency is lower than the low-frequency end of the passband or whose anti-resonance frequency is lower than the high-frequency end of the passband.

[0200] As a result, the number of surface acoustic wave resonators with an inductive impedance in the passband becomes larger than the number of surface acoustic wave resonators with a capacitive impedance in the passband, so that the impedance of the entire passband of the surface acoustic wave filter 1 becomes inductive. Therefore, impedance matching between the low-noise amplifier 2 having a capacitive input impedance and the surface acoustic wave filter 1 can be achieved with higher accuracy. Therefore, the surface acoustic wave filter 1 and the high-frequency module 100 with further reduced matching loss can be provided.

[0201] Figure 6B It is a graph showing the relationship between the inductance value Lg of the inductor 41 of the high-frequency module 500 according to the comparative example and the noise figure. As shown in this figure, the smaller the inductance value Lg becomes, the smaller the resistance component of the inductor 41 becomes, and thus the noise figure of the low-noise amplifier 2 is further reduced. In addition, in the case where no inductor 41 (inductance value Lg is 0) is added as in the high-frequency module 100 according to the present embodiment, the parasitic capacitance 32 caused by the mounting electrode of the inductor 41 and the wiring from the mounting electrode to the low-noise amplifier 2 becomes smaller, and thus the noise figure of the low-noise amplifier 2 is significantly reduced.

[0202] Figure 6CIt is a graph showing the frequency characteristics of the noise figure of the low-noise amplifier 2 related to the embodiment and the comparative example. The low-noise amplifier 2 related to the embodiment has a lower noise figure throughout the frequency band (1800 to 2800 MHz) including the passband than the low-noise amplifier 2 related to the comparative example. Therefore, according to the high-frequency module 100 related to the present embodiment, the noise figure of the low-noise amplifier 2 can be reduced.

[0203] [Structure of the surface acoustic wave filter 1A related to Modification Example 1]

[0204] Figure 7 It is a circuit structure diagram of the surface acoustic wave filter 1A related to Modification Example 1 of the embodiment. As shown in this figure, the surface acoustic wave filter 1A related to Modification Example 1 is a band-pass filter (band-pass filter), and includes series-arm resonators 11, 12, 13, and 16, shunt-arm resonators 21, 22, and 25, capacitors 35 and 36, and input / output terminals 110 and 120. Compared with the surface acoustic wave filter 1 related to the embodiment, the difference in the circuit structure of the surface acoustic wave filter 1A related to this modification is that the series-arm resonator 14, the shunt-arm resonator 23, the capacitors 15 and 24 are not arranged, and the series-arm resonator 16, the shunt-arm resonator 25, the capacitors 35 and 36 are arranged. Hereinafter, regarding the surface acoustic wave filter 1A related to this modification, the description of the same structure as the surface acoustic wave filter 1 related to the embodiment will be omitted, and the description will be centered on the different structure.

[0205] The series-arm resonator 16 and the capacitor 36 connected in parallel to each other are an example of a surface acoustic wave resonator including a surface acoustic wave resonator, and constitute a series-arm resonator 16A. The series-arm resonator 16A is arranged in a series-arm path connecting the input / output terminal 110 (second input / output terminal) and the input / output terminal 120 (first input / output terminal). By connecting the capacitor 36 in parallel with the series-arm resonator 16, the resonance bandwidth of the series-arm resonator 16A becomes narrower than the resonance bandwidth of the series-arm resonator 16.

[0206] The series-arm resonators 11 to 13 and the series-arm resonator 16A are connected in sequence from the input / output terminal 110 in the order of the series-arm resonator 11, the series-arm resonator 16A, the series-arm resonators 12 and 13.

[0207] The parallel-arm resonator 25 and the capacitor 35 connected in series are an example of an elastic-wave resonator including an elastic-wave resonator, and constitute a parallel-arm resonator 25A. The parallel-arm resonator 25A is connected between the connection point of the series-arm resonators 12 and 13 and the ground. By connecting the capacitor 35 in series with the parallel-arm resonator 25, the resonance bandwidth of the parallel-arm resonator 25A becomes narrower than the resonance bandwidth of the parallel-arm resonator 25.

[0208] The series-arm resonator 13 is an example of a first series-arm resonator, and has a resonance frequency frs13 (first resonance frequency) and an anti-resonance frequency fas13 (first anti-resonance frequency).

[0209] The parallel-arm resonator 25A is an example of a first parallel-arm resonator, and has a resonance frequency frp25A (second resonance frequency) and an anti-resonance frequency fap25A (second anti-resonance frequency).

[0210] The resonance frequency frs13 (first resonance frequency) of the series-arm resonator 13 (first series-arm resonator) and the resonance frequency frp25A (second resonance frequency) of the parallel-arm resonator 25A (first parallel-arm resonator) are below the low-frequency end of the passband of the elastic-wave filter 1A. In addition, the anti-resonance frequency fas13 (first anti-resonance frequency) of the series-arm resonator 13 (first series-arm resonator) and the anti-resonance frequency fap25A (second anti-resonance frequency) of the parallel-arm resonator 25A (first parallel-arm resonator) are above the high-frequency end of the above passband.

[0211] Furthermore, the resonance frequency frs13 is higher than the resonance frequency frp25A, and the anti-resonance frequency fas13 is higher than the anti-resonance frequency fap25A.

[0212] Accordingly, by making the impedance in the passband of the elastic-wave filter 1A according to this modification example inductive, it is possible to make the impedance of the high-frequency module according to this modification example including the elastic-wave filter 1A and the low-noise amplifier 2 close to the reference impedance without adding a matching inductor. Therefore, it is possible to reduce the matching loss of the elastic-wave filter 1A and the high-frequency module according to this modification example, and it is possible to miniaturize the high-frequency module.

[0213] Furthermore, in the inductive impedance band of the series-arm resonator 13, the low-impedance band overlaps with the passband, and in the inductive impedance band of the parallel-arm resonator 25A, the high-impedance band overlaps with the passband. Thereby, it is possible to reduce the insertion loss of the elastic-wave filter 1A.

[0214] Therefore, it is possible to provide the elastic-wave filter 1A and the high-frequency module that ensure low loss from the viewpoints of both matching loss and insertion loss.

[0215] In addition, in this modified example, the first series-arm resonator is not limited to the series-arm resonator 13, and can be any one of the series-arm resonators 11, 12, and 16A. Further, the first parallel-arm resonator is not limited to the parallel-arm resonator 25A, and can be any one of the parallel-arm resonators 21 and 22.

[0216] In addition, in the surface acoustic wave filter 1A according to this modified example, the first series-arm resonator (series-arm resonator 13) is connected closest to the input / output terminal 120 among the plurality of series-arm resonators, and the first parallel-arm resonator (parallel-arm resonator 25A) is connected closest to the input / output terminal 120 among the plurality of parallel-arm resonators.

[0217] Thus, the resonator showing an inductive impedance in the passband is arranged closest to the input terminal of the low-noise amplifier 2 showing a capacitive impedance, so that the impedance matching between the surface acoustic wave filter 1A and the low-noise amplifier 2 can be made to coincide with high efficiency and high precision.

[0218] In addition, the first series-arm resonator (series-arm resonator 13) may not be connected closest to the input / output terminal 120 among the plurality of series-arm resonators. Further, the first parallel-arm resonator (parallel-arm resonator 25A) may not be connected closest to the input / output terminal 120 among the plurality of parallel-arm resonators. In this case, the impedance in the passband of the surface acoustic wave filter 1A can also be made inductive, so that the matching loss of the surface acoustic wave filter 1A and the high-frequency module can be reduced.

[0219] In addition, the resonance bandwidth of the parallel-arm resonator 25A becomes narrower than the resonance bandwidth of the parallel-arm resonator 25, and the resonance bandwidth of the series-arm resonator 16A becomes narrower than the resonance bandwidth of the series-arm resonator 16. Thus, a larger attenuation amount near the passband can be ensured.

[0220] [Structure of the surface acoustic wave filter 1B according to Modified Example 2]

[0221] Figure 8A is a circuit structure diagram of the surface acoustic wave filter 1B according to Modified Example 2 of the embodiment. Figure 8B is a graph showing the passing characteristics of the frequency band near the passband of the surface acoustic wave filter 1B according to Modified Example 2 and the impedance characteristics of the parallel-arm resonator 20. Figure 8C is a graph showing the impedance characteristics of the wideband parallel-arm resonator 20 of the surface acoustic wave filter 1B according to Modified Example 2.

[0222] As Figure 8AAs shown, the surface acoustic wave filter 1B according to Modification 2 is a bandpass filter (band-pass filter), and includes series arm resonators 11, 12, 13, and 14, shunt arm resonators 21, 22, 23, and 25, an inductor 45, and input / output terminals 110 and 120. Compared with the surface acoustic wave filter 1 according to the embodiment, the difference in the circuit structure of the surface acoustic wave filter 1B according to this modification is that capacitors 15 and 24 are not provided, and shunt arm resonators 25 and an inductor 45 are provided. Hereinafter, for the surface acoustic wave filter 1B according to this modification, the description of the same structure as that of the surface acoustic wave filter 1 according to the embodiment will be omitted, and the description will be centered on the different structure.

[0223] The series arm resonators 11 to 14 are connected in series in order of the series arm resonators 11, 12, 13, and 14 from the input / output terminal 110 in sequence.

[0224] The shunt arm resonator 21 is connected between the connection point of the series arm resonators 11 and 12 and the ground. The shunt arm resonator 22 is connected between the connection point of the series arm resonators 12 and 13 and the ground. The shunt arm resonator 23 is connected between the connection point of the series arm resonators 13 and 14 and the ground.

[0225] The shunt arm resonator 25 (first surface acoustic wave resonator) and the inductor 45 (first inductor) connected in series with each other are an example of a surface acoustic wave resonator including a surface acoustic wave resonator, and constitute a shunt arm resonator 20. The shunt arm resonator 20 is connected between the connection point of the series arm resonator 14 and the input / output terminal 120 and the ground. By connecting the inductor 45 in series with the shunt arm resonator 25, the resonance frequency frp20 of the shunt arm resonator 20 shifts to the lower frequency side with respect to the resonance frequency frp25 of the shunt arm resonator 25. That is, by connecting the inductor 45 in series with the shunt arm resonator 25, the resonance bandwidth of the shunt arm resonator 20 becomes wider than the resonance bandwidth of the shunt arm resonator 25.

[0226] Among the series arm resonators 11 to 14, the series arm resonator 14 is an example of a first series arm resonator, and has a resonance frequency frs14 (first resonance frequency) and an anti-resonance frequency fas14 (first anti-resonance frequency).

[0227] Among the shunt arm resonators 21 to 23 and the shunt arm resonator 20, the shunt arm resonator 20 is an example of a first shunt arm resonator, and has a resonance frequency frp20 (second resonance frequency) and an anti-resonance frequency fap20 (second anti-resonance frequency).

[0228] The resonance frequency frs14 (the first resonance frequency) of the series-arm resonator 14 (the first series-arm resonator) and the resonance frequency frp20 (the second resonance frequency) of the parallel-arm resonator 20 (the first parallel-arm resonator) are below the low-frequency end of the passband of the elastic-wave filter 1B. Further, the anti-resonance frequency fas14 (the first anti-resonance frequency) of the series-arm resonator 14 (the first series-arm resonator) and the anti-resonance frequency fap20 (the second anti-resonance frequency) of the parallel-arm resonator 20 (the first parallel-arm resonator) are above the high-frequency end of the above passband.

[0229] According to the above structure, by making the impedance in the passband of the elastic-wave filter 1B according to this modification example inductive, it is possible to make the impedance of the high-frequency module according to this modification example having the elastic-wave filter 1B and the low-noise amplifier 2 close to the reference impedance without adding an inductor for matching. Therefore, it is possible to reduce the matching loss of the elastic-wave filter 1B and the high-frequency module according to this modification example.

[0230] Further, the resonance frequency frs14 is higher than the resonance frequency frp20, and the anti-resonance frequency fas14 is higher than the anti-resonance frequency fap20. That is, among the resonance frequencies frs14 and frp20 where the impedance becomes minimum, the resonance frequency frs14 is closer to the passband, and among the anti-resonance frequencies fas14 and fap20 where the impedance becomes maximum, the anti-resonance frequency fas14 is farther from the passband. Further, as Figure 8B shown, the frequency difference Δfa between the anti-resonance frequency fap20 of the parallel-arm resonator 20 and the high-frequency end of the passband of the elastic-wave filter 1B is smaller than the frequency difference Δfr between the low-frequency end of the above passband and the resonance frequency frp20 of the parallel-arm resonator 20.

[0231] Thereby, in the inductive impedance frequency band of the series-arm resonator 14, the low-impedance frequency band overlaps with the passband, and in the inductive impedance frequency band of the parallel-arm resonator 20, the high-impedance frequency band overlaps with the passband. Therefore, it is possible to reduce the insertion loss of the elastic-wave filter 1B.

[0232] Further, in the elastic-wave filter 1B according to this modification example, the first series-arm resonator (the series-arm resonator 14) is connected closest to the input / output terminal 120 among the plurality of series-arm resonators, and the first parallel-arm resonator (the parallel-arm resonator 20) is connected closest to the input / output terminal 120 among the plurality of parallel-arm resonators.

[0233] Thereby, the resonator showing an inductive impedance in the passband is arranged closest to the input terminal of the low-noise amplifier 2 showing a capacitive impedance, so that the impedance matching between the elastic-wave filter 1B and the low-noise amplifier 2 can be made to coincide with high efficiency and high precision.

[0234] In addition, the first series-arm resonator (series-arm resonator 14) may not be connected closest to the input / output terminal 120 among the multiple series-arm resonators. Further, the first parallel-arm resonator (parallel-arm resonator 20) may not be connected closest to the input / output terminal 120 among the multiple parallel-arm resonators. In this case, the impedance in the passband of the surface acoustic wave filter 1B can also be made inductive, so that the matching loss of the surface acoustic wave filter 1B and the high-frequency module can be reduced.

[0235] In addition, as Figure 8C shown, the parallel-arm resonator 20 has a high impedance in the DC (direct current) region. Thereby, it is possible to prevent the DC bias current (DC bias voltage) supplied to the low-noise amplifier 2 from leaking to the surface acoustic wave filter 1B side, so that there is no need to arrange a capacitor for DC cut-off between the surface acoustic wave filter 1B and the low-noise amplifier 2.

[0236] Thereby, the high-frequency module according to this modification can be miniaturized.

[0237] In addition, in the surface acoustic wave filter 1B according to this modification, all the surface acoustic wave resonators included in the surface acoustic wave filter 1B are formed on the same piezoelectric substrate 70. Thereby, the resonance frequency bands of all the surface acoustic wave resonators forming the passband of the surface acoustic wave filter 1B can be set to the same level as the above-mentioned passband. In contrast, by connecting the inductor 45 in series with the parallel-arm resonator 25, the parallel-arm resonator 20 having a resonance frequency band that needs to be wider than the above-mentioned passband can be set. Thereby, there is no need to prepare a surface acoustic wave resonator having a wide resonance frequency band width, and all the surface acoustic wave resonators can be integrated on one piezoelectric substrate, so that the surface acoustic wave filter 1B can be miniaturized.

[0238] Therefore, it is possible to provide a small-sized surface acoustic wave filter 1B and a high-frequency module that ensure low loss from the viewpoints of both matching loss and insertion loss.

[0239] In addition, in this modification, the first series-arm resonator is not limited to the series-arm resonator 14, and may be any one of the series-arm resonators 11 to 13. Further, the first parallel-arm resonator is not limited to the parallel-arm resonator 20, and may be any one of the parallel-arm resonators 21 to 23.

[0240] In addition, in the surface acoustic wave filter 1B according to this modification, a second inductor may be connected in parallel to any one of the series-arm resonators 11 to 14 (the second surface acoustic wave resonator). In this case, the circuit in which the second surface acoustic wave resonator and the second inductor are connected in parallel may also be the first series-arm resonator.

[0241] The second inductor is connected in parallel with the second surface acoustic wave resonator, so that the first anti-resonant frequency of the first series arm resonator shifts to the high-frequency side with respect to the anti-resonant frequency of the second surface acoustic wave resonator. That is to say, by connecting the second inductor in parallel with the second surface acoustic wave resonator, the resonance bandwidth of the first series arm resonator becomes wider than the resonance bandwidth of the second surface acoustic wave resonator.

[0242] In this case, the first resonance frequency of the first series arm resonator and the second resonance frequency of the first parallel arm resonator are below the low-frequency end of the passband of the surface acoustic wave filter 1B. In addition, the first anti-resonant frequency of the first series arm resonator and the second anti-resonant frequency of the first parallel arm resonator are above the high-frequency end of the above-mentioned passband.

[0243] According to the above structure, by making the impedance in the passband of the surface acoustic wave filter 1B according to this modification inductive, the impedance of the high-frequency module according to this modification having the surface acoustic wave filter 1B and the low-noise amplifier 2 can be made close to the reference impedance without adding a matching inductor. Therefore, the matching loss of the surface acoustic wave filter 1B and the high-frequency module according to this modification can be reduced.

[0244] In addition, the first resonance frequency is higher than the second resonance frequency, and the first anti-resonant frequency is higher than the second anti-resonant frequency. That is to say, among the first resonance frequency and the second resonance frequency at which the impedance becomes minimum, the first resonance frequency is closer to the passband, and among the first anti-resonant frequency and the second anti-resonant frequency at which the impedance becomes maximum, the first anti-resonant frequency is farther from the passband. Furthermore, the frequency difference Δfr1 between the low-frequency end of the passband of the surface acoustic wave filter 1B and the first resonance frequency is smaller than the frequency difference Δfa1 between the first anti-resonant frequency and the high-frequency end of the above-mentioned passband.

[0245] Thereby, the low-impedance band overlaps with the passband in the inductive impedance band of the first series arm resonator, and the high-impedance band overlaps with the passband in the inductive impedance band of the first parallel arm resonator. Therefore, the insertion loss of the surface acoustic wave filter 1B can be reduced.

[0246] [6 Component configuration of the high-frequency module 100]

[0247] Next, the component configuration of the high-frequency module 100 according to this embodiment will be described.

[0248] Figure 9 are a top view and a cross-sectional view of the high-frequency module 100 according to the embodiment. In Figure 9 In (a) of, the configuration of the circuit components when observing the main surface 90a of the mounting substrate 90 from the positive z-axis direction side is shown. In addition, in Figure 9In (b), the configuration of the circuit components is shown when the main surface 90b of the mounting substrate 90 is viewed from the positive z-axis direction side. In addition, in Figure 9 In (c), Figure 9 A cross-sectional view at the IXC - IXC line in (a) and (b) of Figure 9 is shown. In addition, in

[0249] Figure 9 The high-frequency module 100 shown with respect to Figure 1 The high-frequency module 100 shown also has a mounting substrate 90.

[0250] The mounting substrate 90 has main surfaces 90a (first main surface) and 90b (second main surface) that face each other. In addition, in Figure 9 , the mounting substrate 90 has a rectangular shape when viewed from above, but the shape of the mounting substrate 90 is not limited to this.

[0251] As the mounting substrate 90, for example, a low-temperature co-fired ceramic (LTCC: Low Temperature Co-fired Ceramics) substrate or a high-temperature co-fired ceramic (HTCC: High Temperature Co-fired Ceramics) substrate having a laminated structure with multiple dielectric layers, a component-integrated substrate, a substrate having a redistribution layer (RDL: Redistribution Layer), or a printed circuit board, etc. can be used, but it is not limited to these.

[0252] An elastic wave filter 1 is arranged on the main surface 90a of the mounting substrate 90. A low-noise amplifier 2 is arranged on the main surface 90b of the mounting substrate 90. In addition, resin members and shielding electrode layers may be formed on the main surfaces 90a and 90b. Thus, since the elastic wave filter 1 and the low-noise amplifier 2 are separately arranged on the main surfaces 90a and 90b of the mounting substrate 90, the high-frequency module 100 can be miniaturized.

[0253] As shown in Figure 9 In (a) of, the elastic wave filter 1 is made into a single-chip form (hereinafter, referred to as a filter chip) by, for example, a piezoelectric substrate and a package, etc. On the main surface of the filter chip facing the mounting substrate 90, input / output terminals 110 (IN) and 120 (OUT), and a ground electrode (GND) are formed. In addition, the input / output terminals 110 and 120 and the ground electrode may be planar electrodes, and in addition, they may also be bump electrodes.

[0254] As shown in Figure 9As shown in FIG. (b), the low-noise amplifier 2 is formed on the integrated circuit 80. On the main surface of the integrated circuit 80 facing the mounting substrate 90, an input terminal 240 (IN) and an output terminal 220 (OUT) of the low-noise amplifier 2 are formed. In addition, the input terminal 240 and the output terminal 220 may be planar electrodes, or may be bump electrodes.

[0255] The integrated circuit 80 is constituted by using, for example, CMOS (Complementary Metal Oxide Semiconductor), and specifically, it may also be manufactured by an SOI (Silicon on Insulator) process. In addition, the integrated circuit 80 is not limited to CMOS.

[0256] As Figure 9 As shown in FIG. (c), the input / output terminal 120 and the input terminal 240 are connected by a via conductor 300 without passing through a matching circuit element.

[0257] Here, when looking down at the mounting substrate 90, at least a part of the surface acoustic wave filter 1 and the low-noise amplifier 2 overlap.

[0258] Thereby, the wiring connecting the surface acoustic wave filter 1 and the low-noise amplifier 2 can be shortened, and thus the high-frequency module 100 can be made to have lower loss.

[0259] In addition, furthermore, when looking down at the mounting substrate 90, at least a part of the input / output terminal 120 and the input terminal 240 may also overlap.

[0260] Thereby, the surface acoustic wave filter 1 and the low-noise amplifier 2 can be connected only by the via conductor 300, and thus the high-frequency module 100 can be made to have even lower loss.

[0261] [Component configuration of the high-frequency module 200 according to Modification Example 3]

[0262] Figure 10 FIG. is a circuit configuration diagram of the high-frequency module 200 according to Modification Example 3. As shown in this figure, the high-frequency module 200 according to this modification example includes surface acoustic wave filters 6A, 6B, 6C, 6D, 9A, 9B, 8A, and 8B, low-noise amplifiers 2A, 2B, 2C, 2D, 2E, 2F, 2G, and 2H, switches 221, 222, 223, and 230, inductors 241, 242, 243, 244, 245, and 246, and an antenna connection terminal 150.

[0263] The elastic wave filters 6A, 6B, 9A, and 9B are an example of the first elastic wave filter. For example, they have the same circuit structure and the same resonant characteristics of the elastic wave resonators as any one of the elastic wave filter 1 according to the embodiment, the elastic wave filter 1A according to the first modification, and the elastic wave filter 1B according to the second modification.

[0264] The elastic wave filter 6A has an input / output terminal 251 (second input / output terminal) and an input / output terminal 261 (first input / output terminal), and for example, has a passband including at least a part of a frequency band A belonging to the middle frequency band group (1427 to 2200 MHz, hereinafter referred to as MB).

[0265] The elastic wave filter 6B has an input / output terminal 252 (second input / output terminal) and an input / output terminal 262 (first input / output terminal), and for example, has a passband including at least a part of a frequency band B belonging to the MB group. The elastic wave filter 9A has an input / output terminal 255 (second input / output terminal) and an input / output terminal 265 (first input / output terminal), and for example, has a passband including at least a part of a frequency band E belonging to the high frequency band group (2300 to 2690 MHz, hereinafter referred to as HB). The elastic wave filter 9B has an input / output terminal 256 (second input / output terminal) and an input / output terminal 266 (first input / output terminal), and for example, has a passband including at least a part of a frequency band F belonging to the HB group.

[0266] The elastic wave filters 6C, 6D, 8A, and 8B are an example of the second elastic wave filter. For example, they have the same circuit structure and the same resonant characteristics of the elastic wave resonators as any one of the elastic wave filter 1 according to the embodiment, the elastic wave filter 1A according to the first modification, and the elastic wave filter 1B according to the second modification.

[0267] The elastic wave filter 6C has an input / output terminal 253 (fourth input / output terminal) and an input / output terminal 263 (third input / output terminal), and for example, has a passband including at least a part of a frequency band C belonging to the MB group. The elastic wave filter 6D has an input / output terminal 254 (fourth input / output terminal) and an input / output terminal 264 (third input / output terminal), and for example, has a passband including at least a part of a frequency band D belonging to the MB group. The elastic wave filter 8A has an input / output terminal 257 (fourth input / output terminal) and an input / output terminal 267 (third input / output terminal), and for example, has a passband including at least a part of a frequency band G belonging to the HB group. The elastic wave filter 8B has an input / output terminal 258 (fourth input / output terminal) and an input / output terminal 268 (third input / output terminal), and for example, has a passband including at least a part of a frequency band H belonging to the HB group.

[0268] The low-noise amplifiers 2A, 2B, 2E, and 2F are an example of the first low-noise amplifier and have the same circuit structure and the same amplification characteristics as the low-noise amplifier 2 according to the embodiment.

[0269] The low-noise amplifier 2A has an input terminal 131. The input terminal 131 is an example of the first input terminal and is connected to the input / output terminal 261 without passing through an inductor. The low-noise amplifier 2B has an input terminal 132. The input terminal 132 is an example of the first input terminal and is connected to the input / output terminal 262 without passing through an inductor. The low-noise amplifier 2E has an input terminal 135. The input terminal 135 is an example of the first input terminal and is connected to the input / output terminal 265 without passing through an inductor. The low-noise amplifier 2F has an input terminal 136. The input terminal 136 is an example of the first input terminal and is connected to the input / output terminal 266 without passing through an inductor.

[0270] The low-noise amplifiers 2C, 2D, 2G, and 2H are an example of the second low-noise amplifier and have the same circuit structure and the same amplification characteristics as the low-noise amplifier 2 according to the embodiment.

[0271] The low-noise amplifier 2C has an input terminal 133. The input terminal 133 is an example of the second input terminal and is connected to the input / output terminal 263 without passing through an inductor. The low-noise amplifier 2D has an input terminal 134. The input terminal 134 is an example of the second input terminal and is connected to the input / output terminal 264 without passing through an inductor. The low-noise amplifier 2G has an input terminal 137. The input terminal 137 is an example of the second input terminal and is connected to the input / output terminal 267 without passing through an inductor. The low-noise amplifier 2H has an input terminal 138. The input terminal 138 is an example of the second input terminal and is connected to the input / output terminal 268 without passing through an inductor.

[0272] The surface acoustic wave filters 6A and 6B are included in the filter integrated component 211. The filter integrated component 211 is an example of the first integrated component and has, for example, a structure in which surface acoustic wave resonators of the surface acoustic wave filters 6A and 6B are arranged on a common piezoelectric substrate. The surface acoustic wave filters 9A and 9B are included in the filter integrated component 213. The filter integrated component 213 is an example of the first integrated component and has, for example, a structure in which surface acoustic wave resonators of the surface acoustic wave filters 9A and 9B are arranged on a common piezoelectric substrate.

[0273] The elastic wave filters 6C and 6D are included in the filter integrated component 212. The filter integrated component 212 is an example of a second integrated component, and has, for example, a structure in which elastic wave resonators of the elastic wave filters 6C and 6D are arranged on a common piezoelectric substrate. The elastic wave filters 8A and 8B are included in the filter integrated component 214. The filter integrated component 214 is an example of a second integrated component, and has, for example, a structure in which elastic wave resonators of the elastic wave filters 8A and 8B are arranged on a common piezoelectric substrate.

[0274] The low noise amplifiers 2A to 2H are included in the integrated circuit 210. The integrated circuit 210 is formed, for example, using CMOS, and specifically may also be manufactured by an SOI process. In addition, the integrated circuit 210 is not limited to CMOS.

[0275] The switch 221 is an example of an antenna switch, and has a first common terminal, a first selection terminal, and a second selection terminal, and switches the connection between the first common terminal and the first selection terminal and the connection between the first common terminal and the second selection terminal. The first common terminal is connected to the antenna connection terminal 150, the first selection terminal is connected to the elastic wave filters 6A and 6C, and the second selection terminal is connected to the elastic wave filters 6B and 6D.

[0276] The switch 222 is an example of an antenna switch, and has a second common terminal, a third selection terminal, and a fourth selection terminal, and switches the connection between the second common terminal and the third selection terminal and the connection between the second common terminal and the fourth selection terminal. The second common terminal is connected to the antenna connection terminal 150, the third selection terminal is connected to the elastic wave filter 9A, and the fourth selection terminal is connected to the elastic wave filter 9B.

[0277] The switch 223 is an example of an antenna switch, and has a third common terminal, a fifth selection terminal, and a sixth selection terminal, and switches the connection between the third common terminal and the fifth selection terminal and the connection between the third common terminal and the sixth selection terminal. The third common terminal is connected to the antenna connection terminal 150, the fifth selection terminal is connected to the elastic wave filter 8A, and the sixth selection terminal is connected to the elastic wave filter 8B.

[0278] The switches 221, 222, and 223 constitute a switch circuit 224.

[0279] The switch 230 is an example of an output switch, for example, including four SPST (Single Pole Single Throw) switches. The switch 230 switches the connection and disconnection between the low-noise amplifiers 2A and 2B and the first output terminal, switches the connection and disconnection between the low-noise amplifiers 2C and 2D and the second output terminal, switches the connection and disconnection between the low-noise amplifiers 2E and 2F and the third output terminal, and switches the connection and disconnection between the low-noise amplifiers 2G and 2H and the fourth output terminal.

[0280] The inductor 241 is connected to the path connecting the switch 221 and the surface acoustic wave filters 6A and 6C. The inductor 242 is connected to the path connecting the switch 221 and the surface acoustic wave filters 6B and 6D. The inductor 243 is connected to the path connecting the switch 222 and the surface acoustic wave filter 9A. The inductor 244 is connected to the path connecting the switch 222 and the surface acoustic wave filter 9B. The inductor 245 is connected to the path connecting the switch 223 and the surface acoustic wave filter 8A. The inductor 246 is connected to the path connecting the switch 223 and the surface acoustic wave filter 8B.

[0281] According to the above structure, the high-frequency module 200 can switch and execute the simultaneous transmission of (1) signals in frequency bands A and C belonging to MB or signals in frequency bands B and D belonging to MB, signals in frequency band E or frequency band F belonging to HB, and signals in frequency band G or frequency band H belonging to HB.

[0282] Next, the component configuration of the high-frequency module 200 according to this modification example will be described. Figure 11A is a top view of the high-frequency module 200 according to Modification Example 3. Figure 11B is a cross-sectional view of the high-frequency module 200 according to Modification Example 3. In Figure 11A it shows the configuration of circuit components when the main surface 90a of the mounting substrate 90 is viewed in perspective from the positive z-axis side. In addition, in Figure 11B it shows Figure 11A a cross-sectional view taken along the XIB-XIB line of Figure 11A it shows the circuit components arranged on the main surface 90a side with solid lines and the circuit components arranged on the main surface 90b side with dashed lines.

[0283] As Figure 11A and Figure 11B shown, in addition to the circuit components shown in Figure 10 the high-frequency module 200 also includes a mounting substrate 90.

[0284] The mounting substrate 90 has opposed main surfaces 90a (first main surface) and 90b (second main surface). As the mounting substrate 90, for example, an LTCC substrate or an HTCC substrate having a stacked structure with a plurality of dielectric layers, a component-embedded substrate, a substrate having an RDL, or a printed substrate can be used, but it is not limited to these.

[0285] As Figure 11A and Figure 11B shown, the filter integrated components 211 to 214 are arranged on the main surface 90a, and the low-noise amplifiers 2A to 2H, and the switches 221, 222, 223, and 230 are arranged on the main surface 90b.

[0286] Thus, the filter integrated components 211 to 214 and the low-noise amplifiers 2A to 2H, and the switches 221, 222, 223, and 230 are separately arranged on the main surfaces 90a and 90b of the mounting substrate 90, so that the high-frequency module 200 can be miniaturized.

[0287] The main surface 90a includes a first outer peripheral region and a first central region located inside the first outer peripheral region, and the main surface 90b includes a second outer peripheral region and a second central region located inside the second outer peripheral region.

[0288] The input / output terminals 261 to 268 of the filter integrated components 211 to 214 are arranged in the first central region. In addition, the low-noise amplifiers 2A to 2H are arranged in the second central region. When the mounting substrate 90 is viewed from above, the input / output terminals 261 and 262 overlap with the low-noise amplifiers 2A or 2B, respectively, the input / output terminals 263 and 264 overlap with the low-noise amplifiers 2C or 2D, respectively, the input / output terminals 265 and 266 overlap with the low-noise amplifiers 2E or 2F, respectively, and the input / output terminals 267 and 268 overlap with the low-noise amplifiers 2G or 2H, respectively.

[0289] Thus, since the input / output terminals 261 to 268 are arranged to overlap with the low-noise amplifiers 2A to 2H in the above top view, the wirings connecting the input / output terminals 261 to 268 and the low-noise amplifiers 2A to 2H can be shortened. Thereby, the transmission loss and the stray capacitance of the above wirings can be reduced, and thus the noise figure of the low-noise amplifiers 2A to 2H can be improved.

[0290] In addition, in the above top view, the input / output terminals 251 and 252 are arranged on the outer peripheral side of the input / output terminals 261 and 262, the input / output terminals 253 and 254 are arranged on the outer peripheral side of the input / output terminals 263 and 264, the input / output terminals 255 and 256 are arranged on the outer peripheral side of the input / output terminals 265 and 266, and the input / output terminals 257 and 258 are arranged on the outer peripheral side of the input / output terminals 267 and 268. In addition, in the above top view, the switches 221 to 223 are arranged in the second outer peripheral region.

[0291] Thus, since in the above top view, the input / output terminals 251 to 258 are arranged on the outer peripheral side of the input / output terminals 261 to 268 and the switches 221 to 223 are arranged in the second outer peripheral region, the wiring connecting the input / output terminals 251 to 258 and the switches 221 to 223 can be shortened. As a result, the transmission loss and stray capacitance of the above wiring can be reduced, and thus impedance matching between the antenna and the surface acoustic wave filters 6A to 6D, 9A, 9B, 8A, and 8B can be achieved with high precision.

[0292] [Component Arrangement of High-Frequency Module 202 According to Modification Example 4]

[0293] Next, the component arrangement of the high-frequency module 202 according to Modification Example 4 will be described. Figure 12A is a top view of the high-frequency module 202 according to Modification Example 4. Figure 12B is a cross-sectional view of the high-frequency module 202 according to Modification Example 4. In Figure 12A shows the arrangement of circuit components when the main surface 90a of the mounting substrate 90 is viewed in perspective from the positive z-axis direction side. In addition, in Figure 12B shows Figure 12A a cross-sectional view taken along line XIIB - XIIB of Figure 12A In addition, in

[0294] the high-frequency module 202 according to this modification example has the same circuit connection structure as the high-frequency module 200 according to Modification Example 3, and only the component arrangement structure is different. Therefore, hereinafter, regarding the high-frequency module 202 according to this modification example, the description will focus on the component arrangement structure.

[0295] As shown in Figure 12A and Figure 12B the high-frequency module 202 includes, in addition to the circuit components shown in Figure 10 a mounting substrate 90.

[0296] The mounting substrate 90 has opposed main surfaces 90a (first main surface) and 90b (second main surface). As the mounting substrate 90, for example, an LTCC substrate, an HTCC substrate, a component-embedded substrate, a substrate with RDL, or a printed substrate having a stacked structure with a plurality of dielectric layers can be used, but it is not limited to these.

[0297] The low-noise amplifiers 2A to 2H, and the switches 221, 222, 223, and 230 are included in the integrated circuit 210A. The integrated circuit 210A is an example of a third integrated component, and is formed using, for example, CMOS, and specifically, can also be manufactured by an SOI process. In addition, the integrated circuit 210A is not limited to CMOS. Further, the switches 221, 222, 223, and 230 may not be included in the integrated circuit 210A.

[0298] As Figure 12A and Figure 12B shown, the filter integrated components 211 to 214 and the integrated circuit 210A are arranged on the main surface 90a.

[0299] The filter integrated component 211 and the integrated circuit 210A are arranged on the main surface 90a in the order of the mounting substrate 90, the integrated circuit 210A, and the filter integrated component 211. The filter integrated component 212 and the integrated circuit 210A are arranged on the main surface 90a in the order of the mounting substrate 90, the integrated circuit 210A, and the filter integrated component 212. The filter integrated component 213 and the integrated circuit 210A are arranged on the main surface 90a in the order of the mounting substrate 90, the integrated circuit 210A, and the filter integrated component 213. The filter integrated component 214 and the integrated circuit 210A are arranged on the main surface 90a in the order of the mounting substrate 90, the integrated circuit 210A, and the filter integrated component 214.

[0300] That is, the integrated circuit 210A is arranged on the main surface 90a of the mounting substrate 90, and the filter integrated components 211 to 214 are arranged on the positive z-axis side of the integrated circuit 210A.

[0301] The main surface 90a includes a first outer peripheral region and a first central region located inside the first outer peripheral region.

[0302] The input / output terminals 261 to 268 of the filter integrated components 211 to 214 are arranged in the first central region. In addition, the low-noise amplifiers 2A to 2H are arranged in the first central region. When looking down at the mounting substrate 90, the input / output terminals 261 and 262 respectively overlap with the low-noise amplifiers 2A or 2B, the input / output terminals 263 and 264 respectively overlap with the low-noise amplifiers 2C or 2D, the input / output terminals 265 and 266 respectively overlap with the low-noise amplifiers 2E or 2F, and the input / output terminals 267 and 268 respectively overlap with the low-noise amplifiers 2G or 2H.

[0303] The input / output terminals 261 to 268 are respectively connected to the low-noise amplifiers 2A to 2H via via conductors provided in the integrated circuit 210A and wirings provided in the mounting substrate 90.

[0304] Thus, since the input / output terminals 261 to 268 are arranged to overlap with the low-noise amplifiers 2A to 2H in the above-mentioned top view, the wirings connecting the input / output terminals 261 to 268 and the low-noise amplifiers 2A to 2H can be shortened. As a result, the transmission loss and stray capacitance of the above-mentioned wirings can be reduced, and thus the noise figure of the low-noise amplifiers 2A to 2H can be improved.

[0305] In addition, in the above-mentioned top view, the input / output terminals 251 and 252 are arranged on the outer peripheral side compared to the input / output terminals 261 and 262, the input / output terminals 253 and 254 are arranged on the outer peripheral side compared to the input / output terminals 263 and 264, the input / output terminals 255 and 256 are arranged on the outer peripheral side compared to the input / output terminals 265 and 266, and the input / output terminals 257 and 258 are arranged on the outer peripheral side compared to the input / output terminals 267 and 268. In addition, in the above-mentioned top view, the switches 221 to 223 are arranged in the first outer peripheral region.

[0306] Thus, since the input / output terminals 251 to 258 are arranged on the outer peripheral side compared to the input / output terminals 261 to 268 and the switches 221 to 223 are arranged in the first outer peripheral region in the above-mentioned top view, the wirings connecting the input / output terminals 251 to 258 and the switches 221 to 223 can be shortened. As a result, the transmission loss and stray capacitance of the above-mentioned wirings can be reduced, and thus the impedance matching between the antenna and the surface acoustic wave filters 6A to 6D, 7A, 7B, 8A, and 8B can be achieved with high precision.

[0307] [Component Arrangement of the High-Frequency Module 203 According to Modification Example 5]

[0308] Next, the component arrangement of the high-frequency module 203 according to Modification Example 5 will be described. Figure 13 It is a cross-sectional view of the high-frequency module 203 according to Modification Example 5.

[0309] The high-frequency module 203 according to this modification example has the same circuit connection structure as the high-frequency module 202 according to Modification Example 4, except for the connection structures of the filter integrated components 211 to 214 and the integrated circuit 210B. Therefore, hereinafter, regarding the high-frequency module 203 according to this modification example, the above connection structure will be mainly described.

[0310] The low-noise amplifiers 2A to 2H, the switches 221, 222, 223, and 230 are included in the integrated circuit 210B. The integrated circuit 210B is an example of a third integrated component, and is formed using, for example, CMOS, and can also be specifically manufactured by an SOI process. In addition, the integrated circuit 210B is not limited to CMOS. In addition, the switches 221, 222, 223, and 230 may not be included in the integrated circuit 210B.

[0311] As Figure 13 shown, the filter integrated components 211 to 214 and the integrated circuit 210B are arranged on the main surface 90a.

[0312] The filter integrated component 211 and the integrated circuit 210B are arranged on the main surface 90a in the order of the mounting substrate 90, the integrated circuit 210B, and the filter integrated component 211. The filter integrated component 212 and the integrated circuit 210B are arranged on the main surface 90a in the order of the mounting substrate 90, the integrated circuit 210B, and the filter integrated component 212. The filter integrated component 213 and the integrated circuit 210B are arranged on the main surface 90a in the order of the mounting substrate 90, the integrated circuit 210B, and the filter integrated component 213. The filter integrated component 214 and the integrated circuit 210B are arranged on the main surface 90a in the order of the mounting substrate 90, the integrated circuit 210B, and the filter integrated component 214.

[0313] That is, the integrated circuit 210B is arranged on the main surface 90a of the mounting substrate 90, and the filter integrated components 211 to 214 are arranged on the positive z-axis side of the integrated circuit 210B.

[0314] The filter integrated component 211 has opposed main surfaces 211a (third main surface) and 211b (fourth main surface). The filter integrated component 213 has opposed main surfaces 213a (third main surface) and 213b (fourth main surface). The filter integrated component 212 has opposed main surfaces 212a (fifth main surface) and 212b (sixth main surface). The filter integrated component 214 has opposed main surfaces 214a (fifth main surface) and 214b (sixth main surface). The integrated circuit 210B has opposed main surfaces 210a (seventh main surface) and 210b (eighth main surface).

[0315] The main surface 210a faces the main surface 90a, and the main surface 210b faces the main surface 211a and the main surface 212a. The input / output terminals 261 and 262 are arranged on the main surface 211a, the input / output terminals 265 and 266 are arranged on the main surface 213a, the input / output terminals 263 and 264 are arranged on the main surface 212a, and the input / output terminals 267 and 268 are arranged on the main surface 214a. The input terminals 131 to 138 are arranged on the main surface 210b.

[0316] The main surface 90a includes a first outer peripheral region and a first central region located inside the first outer peripheral region.

[0317] The input / output terminals 261 to 268 of the filter integrated components 211 to 214 are arranged in the first central region. In addition, the low-noise amplifiers 2A to 2H are arranged in the first central region. When the mounting substrate 90 is viewed from above, the input / output terminals 261 and 262 overlap with the low-noise amplifiers 2A or 2B respectively, the input / output terminals 263 and 264 overlap with the low-noise amplifiers 2C or 2D respectively, the input / output terminals 265 and 266 overlap with the low-noise amplifiers 2E or 2F respectively, and the input / output terminals 267 and 268 overlap with the low-noise amplifiers 2G or 2H respectively.

[0318] Thus, since the input / output terminals 261 to 268 of the filter integrated components 211 to 214 and the input terminals 131 to 138 of the low-noise amplifiers 2A to 2H are arranged to face each other, the input / output terminals 261 to 268 and the input terminals 131 to 138 can be directly connected without passing through the via conductors in the integrated circuit 210B. As a result, the wiring connecting the input / output terminals 261 to 268 and the low-noise amplifiers 2A to 2H can be further shortened. As a result, the transmission loss and stray capacitance of the above wiring can be reduced, so that the noise figure of the low-noise amplifiers 2A to 2H can be improved. Furthermore, since it is not necessary to form via conductors connecting the input / output terminals 261 to 268 and the input terminals 131 to 138 in the integrated circuit 210B, the integrated circuit 210B can be miniaturized.

[0319] [Component arrangement of the high-frequency module 204 according to Modification Example 6]

[0320] Next, the component arrangement of the high-frequency module 204 according to Modification Example 6 will be described. Figure 14A is a top view of the high-frequency module 204 according to Modification Example 6. Figure 14B is a cross-sectional view of the high-frequency module 204 according to Modification Example 6. In Figure 14A it shows the arrangement of circuit components when the main surface 90a of the mounting substrate 90 is viewed in perspective from the positive z-axis direction side. In addition, in Figure 14B Figure 14B it showsFigure 14A A cross-sectional view taken along line XIVB-XIVB. In addition, in Figure 14A , the circuit components arranged on the main surface 90a side are shown by solid lines, and the portions of the circuit components arranged on the main surface 90a side that overlap with the circuit components on the more positive z-axis direction side are shown by dashed lines.

[0321] When comparing the high-frequency module 204 according to this modification example with the high-frequency module 200 according to Modification Example 3, the circuit connection structure is the same, and only the component arrangement structure is different. Therefore, hereinafter, regarding the high-frequency module 204 according to this modification example, the above-described component arrangement structure will be mainly described.

[0322] When comparing the high-frequency module 204 according to this modification example with the high-frequency module 202 according to Modification Example 4, the circuit connection structure is the same, and only the component arrangement structure is different. Therefore, hereinafter, regarding the high-frequency module 204 according to this modification example, the above-described component arrangement structure will be mainly described.

[0323] Switches 221, 222, and 223 constitute a switch circuit 224. The switch circuit 224 is an example of a first switch, and switches the connection between the antenna connection terminal 150 and the input / output terminals 251 and 253, and the connection between the antenna connection terminal 150 and the input / output terminals 252 and 254, switches the connection between the antenna connection terminal 150 and the input / output terminal 255, and the connection between the antenna connection terminal 150 and the input / output terminal 256, and switches the connection between the antenna connection terminal 150 and the input / output terminal 257, and the connection between the antenna connection terminal 150 and the input / output terminal 258.

[0324] The low-noise amplifiers 2A to 2H and the switch circuit 224 are included in the integrated circuit 210B. The integrated circuit 210B is an example of a third integrated component. For example, it is formed using CMOS, and specifically, it can also be manufactured by an SOI process. In addition, the integrated circuit 210B is not limited to CMOS.

[0325] As Figure 14B shown, the filter integrated components 211 to 214 and the integrated circuit 210B are arranged on the main surface 90a.

[0326] The filter integrated component 211 and the integrated circuit 210B are arranged on the main surface 90a in the order of the mounting substrate 90, the integrated circuit 210B, and the filter integrated component 211. The filter integrated component 212 and the integrated circuit 210B are arranged on the main surface 90a in the order of the mounting substrate 90, the integrated circuit 210B, and the filter integrated component 212. The filter integrated component 213 and the integrated circuit 210B are arranged on the main surface 90a in the order of the mounting substrate 90, the integrated circuit 210B, and the filter integrated component 213. The filter integrated component 214 and the integrated circuit 210B are arranged on the main surface 90a in the order of the mounting substrate 90, the integrated circuit 210B, and the filter integrated component 214.

[0327] That is to say, the integrated circuit 210B is arranged on the main surface 90a of the mounting substrate 90, and the filter integrated components 211 to 214 are arranged on the positive z-axis side of the integrated circuit 210B.

[0328] The main surface 90a includes a first outer peripheral region and a first central region located inside the first outer peripheral region.

[0329] The input / output terminals 261 to 268 of the filter integrated components 211 to 214 are arranged in the first central region. In addition, the low-noise amplifiers 2A to 2H are arranged in the first central region. When looking down at the mounting substrate 90, the input / output terminals 261 and 262 overlap with the low-noise amplifiers 2A or 2B respectively, the input / output terminals 263 and 264 overlap with the low-noise amplifiers 2C or 2D respectively, the input / output terminals 265 and 266 overlap with the low-noise amplifiers 2E or 2F respectively, and the input / output terminals 267 and 268 overlap with the low-noise amplifiers 2G or 2H respectively.

[0330] Thus, since the input / output terminals 261 to 268 are arranged to overlap with the low-noise amplifiers 2A to 2H in the above-mentioned top view, the wiring connecting the input / output terminals 261 to 268 and the low-noise amplifiers 2A to 2H can be shortened. As a result, the transmission loss and stray capacitance of the above-mentioned wiring can be reduced, and thus the noise figure of the low-noise amplifiers 2A to 2H can be improved.

[0331] In addition, in the above-mentioned top view, the input / output terminals 251 and 252 are arranged on the outer peripheral side compared with the input / output terminals 261 and 262, the input / output terminals 253 and 254 are arranged on the outer peripheral side compared with the input / output terminals 263 and 264, the input / output terminals 255 and 256 are arranged on the outer peripheral side compared with the input / output terminals 265 and 266, and the input / output terminals 257 and 258 are arranged on the outer peripheral side compared with the input / output terminals 267 and 268. In addition, in the above-mentioned top view, the switches 221 to 223 of the switch circuit 224 are arranged close to each other in the first outer peripheral region.

[0332] Thus, since the input / output terminals 251 to 258 are arranged on the outer peripheral side of the input / output terminals 261 to 268 in the above top view and the switching circuit 224 is arranged in the first outer peripheral region, the wiring connecting the input / output terminals 251 to 258 and the switching circuit 224 can be shortened. In addition, the wiring connecting the switching circuit 224 and the antenna can be shortened. Thus, the transmission loss and stray capacitance of the above wiring can be reduced, and thus impedance matching between the antenna and the surface acoustic wave filters 6A to 6D, 7A, 7B, 8A, and 8B can be achieved with high precision.

[0333] In addition, at least one of the inductors 241 to 246 may also be formed inside the mounting substrate 90. Thus, the number of components arranged on the main surface 90a can be reduced, and thus the high-frequency module 204 can be miniaturized.

[0334] [Component arrangement of the high-frequency module 151 according to Modifications 7 to 9]

[0335] Figure 15A It is a circuit structure diagram of the high-frequency module 151 according to Modification 7. As shown in this figure, the high-frequency module 151 according to this modification includes a surface acoustic wave filter 3A and 503A, a low-noise amplifier 2A and 502A, and an inductor 41.

[0336] The surface acoustic wave filter 3A is an example of the first surface acoustic wave filter. For example, it has the same circuit structure and the same resonance characteristics of the surface acoustic wave resonator as any one of the surface acoustic wave filter 1 according to the embodiment, the surface acoustic wave filter 1A according to Modification 1, and the surface acoustic wave filter 1B according to Modification 2. The surface acoustic wave filter 3A has an input / output terminal 113 (second input / output terminal) and an input / output terminal 123 (first input / output terminal).

[0337] The surface acoustic wave filter 503A is an example of the second surface acoustic wave filter. For example, it has the same circuit structure and the same resonance characteristics of the surface acoustic wave resonator as the surface acoustic wave filter 501 according to the comparative example. The surface acoustic wave filter 503A has an input / output terminal 513 (fourth input / output terminal) and an input / output terminal 523 (third input / output terminal).

[0338] The low-noise amplifier 2A is an example of the first low-noise amplifier and has the same circuit structure and the same amplification characteristics as the low-noise amplifier 2 involved in the embodiment. The low-noise amplifier 2A has an input terminal 133. The input terminal 133 is an example of the first input terminal and is connected to the input / output terminal 123 without passing through an inductor. The low-noise amplifier 502A is an example of the second low-noise amplifier and has the same circuit structure and the same amplification characteristics as the low-noise amplifier 2 involved in the embodiment. The low-noise amplifier 502A has an input terminal 533. The input terminal 533 is an example of the second input terminal and is connected to the input / output terminal 523 via an inductor 41.

[0339] The inductor 41 is an example of the third inductor and is arranged between the low-noise amplifier 502A having a capacitive input impedance and the surface acoustic wave filter 503A. By the inductor 41 having an inductive impedance, matching of the low-noise amplifier 502A and the surface acoustic wave filter 503A can be achieved with a reference impedance.

[0340] The surface acoustic wave filters 3A and 503A are included in the filter integrated component 181. The filter integrated component 181 is an example of the first integrated component and has, for example, a structure in which surface acoustic wave resonators of the surface acoustic wave filters 3A and 503A are arranged on a common piezoelectric substrate.

[0341] The low-noise amplifiers 2A and 502A are included in the integrated circuit 182. The integrated circuit 182 is an example of the second integrated component and is formed, for example, using CMOS and can also be specifically manufactured by an SOI process. In addition, the integrated circuit 182 is not limited to CMOS.

[0342] Next, the component arrangement of the high-frequency module 151 according to this modification example will be described. Figure 15B is a top schematic view of the high-frequency module 151 according to Modification Example 7. Figure 15C is a cross-sectional view of the high-frequency module 151 according to Modification Example 7. In Figure 15B it shows the arrangement of circuit components when the main surface 90a of the mounting substrate 90 (described in Figure 15C ) is viewed in perspective from the positive z-axis side. In addition, in Figure 15C it shows Figure 15B a cross-sectional view at the XVC-XVC line of Figure 15B In addition, in

[0343] As Figure 15C shown, the high-frequency module 151 includes in addition to having Figure 15AIn addition to the circuit components shown, a mounting substrate 90 is also provided.

[0344] The mounting substrate 90 has main surfaces 90a (first main surface) and 90b (second main surface) that face each other. As the mounting substrate 90, for example, an LTCC substrate or an HTCC substrate having a stacked structure with multiple dielectric layers, a component-integrated substrate, a substrate having an RDL, or a printed substrate can be used, but it is not limited to these.

[0345] As Figure 15B and Figure 15C shown, the filter integrated component 181 and the inductor 41 are arranged on the main surface 90a, and the integrated circuit 182 is arranged on the main surface 90b. More specifically, as Figure 15C shown, the filter integrated component 181 has a main surface 181a (fourth main surface) and a main surface 181b (third main surface), and is arranged on the mounting substrate 90 such that the main surface 181b faces the main surface 90a. In addition, the integrated circuit 182 has a main surface 182a (fifth main surface) and a main surface 182b (sixth main surface), and is arranged on the mounting substrate 90 such that the main surface 182a faces the main surface 90b.

[0346] As Figure 15B shown, in the high-frequency module 151, when looking down at the mounting substrate 90, at least a part of the filter integrated component 181 and the integrated circuit 182 overlap. Thus, the surface acoustic wave filters 3A and 503A and the low-noise amplifiers 2A and 502A are separately arranged on the main surfaces 90a and 90b of the mounting substrate 90, and the filter integrated component 181 and the integrated circuit 182 are arranged to overlap, so that the high-frequency module 151 can be miniaturized.

[0347] In addition, the main surface 181b includes a peripheral region Rp1 (first peripheral region) and a central region Rc1 (first central region) located inside the peripheral region Rp1. The input / output terminal 123 is arranged in the central region Rc1, and the input / output terminal 523 is arranged in the peripheral region Rp1.

[0348] Thus, since the filter integrated component 181 and the integrated circuit 182 overlap in the above-mentioned top view, and the input / output terminal 123 is arranged in the central region Rc1, the wiring connecting the surface acoustic wave filter 3A and the low-noise amplifier 2A can be shortened. Therefore, the transmission loss and stray capacitance of the above-mentioned wiring can be reduced, and thus the noise figure of the low-noise amplifier 2A can be improved.

[0349] In addition, the input / output terminal 123 and the input terminal 133 may also overlap in the above-mentioned top view. Thus, the wiring connecting the surface acoustic wave filter 3A and the low-noise amplifier 2A can be made the shortest.

[0350] In addition, the main surface 182a includes an outer peripheral region Rp2 (second outer peripheral region) and a central region Rc2 (second central region) located inside the outer peripheral region Rp2. Alternatively, the input terminal 133 may be disposed in the central region Rc2, and the input terminal 533 may be disposed in the outer peripheral region Rp2.

[0351] Thus, since the filter integrated component 181 and the integrated circuit 182 overlap in the above top view, and the input terminal 133 is disposed in the central region Rc2, the wiring connecting the surface acoustic wave filter 3A and the low-noise amplifier 2A can be shortened.

[0352] Figure 16A It is a top view of the filter integrated component 181A according to Modification 8. The high-frequency module according to Modification 8 differs from the high-frequency module 151 according to Modification 7 only in the terminal arrangement of the filter integrated component 181A. Therefore, regarding the high-frequency module according to this modification, the terminal arrangement of the filter integrated component 181A will be mainly described.

[0353] As Figure 16A shown, when looking down at the main surface 181b, the input / output terminal 123 is surrounded by four ground terminals 611, 612, 613, and 614. Thereby, the isolation between the input and output of the surface acoustic wave filter 3A can be improved.

[0354] Figure 16B It is a top view of the filter integrated component 181B according to Modification 9. The high-frequency module according to Modification 9 differs from the high-frequency module 151 according to Modification 7 only in the terminal arrangement of the filter integrated component 181B. Therefore, regarding the high-frequency module according to this modification, the terminal arrangement of the filter integrated component 181B will be mainly described.

[0355] As Figure 16B shown, when looking down at the main surface 181b, ground terminals are arranged between the input / output terminal 123 and other signal terminals. Specifically, ground terminals 615 and 616 are arranged between the input / output terminal 123 and the input / output terminal 113. In addition, ground terminals 617 and 618 are arranged between the input / output terminal 123 and the input / output terminal 513. In addition, ground terminals 619, 620, and 621 are arranged between the input / output terminal 123 and the input / output terminal 523. Thereby, the isolation between the input and output of the surface acoustic wave filter 3A, and the isolation between the surface acoustic wave filter 3A and the surface acoustic wave filter 503A can be improved.

[0356] [12 Component Arrangement of the High-Frequency Module 152 According to Modification 10]

[0357] Figure 17AThis is the circuit structure diagram of the high-frequency module 152 related to Modification Example 10. As shown in this figure, the high-frequency module 152 related to this modification example includes the surface acoustic wave filters 3A, 503A, and 503B, the low-noise amplifiers 2A, 502A, and 502B, and the inductors 41 and 44. Compared with the high-frequency module 151 related to Modification Example 7, as for the circuit structure, the difference is that the surface acoustic wave filter 503B, the low-noise amplifier 502B, and the inductor 44 are additionally provided. Therefore, hereinafter, regarding the circuit structure of the high-frequency module 152, the circuit structures of the surface acoustic wave filter 503B, the low-noise amplifier 502B, and the inductor 44 will be mainly described.

[0358] The surface acoustic wave filter 503B is an example of the second surface acoustic wave filter. For example, it has the same circuit structure and the same resonance characteristics of the surface acoustic wave resonator as the surface acoustic wave filter 501 related to the comparative example. The surface acoustic wave filter 503B has input / output terminals 514 and 524.

[0359] The low-noise amplifier 502B is an example of the second low-noise amplifier, and has the same circuit structure and the same amplification characteristics as the low-noise amplifier 2 related to the embodiment. The low-noise amplifier 502B has an input terminal 534. The input terminal 534 is connected to the input / output terminal 524 via the inductor 44.

[0360] The inductor 44 is an example of the third inductor, and is arranged between the low-noise amplifier 502B having a capacitive input impedance and the surface acoustic wave filter 503B.

[0361] The surface acoustic wave filters 3A, 503A, and 503B are included in the filter integrated component 183. The filter integrated component 183 is an example of the first integrated component. For example, it has a structure in which the surface acoustic wave resonators of the surface acoustic wave filters 3A, 503A, and 503B are arranged on a common piezoelectric substrate.

[0362] The low-noise amplifiers 2A, 502A, and 502B are included in the integrated circuit 184. The integrated circuit 184 is an example of the second integrated component. For example, it is formed using CMOS, and specifically, it can also be manufactured by the SOI process. In addition, the integrated circuit 184 is not limited to CMOS.

[0363] Next, the component arrangement of the high-frequency module 152 related to this modification example will be described. Figure 17B This is a top view of the filter integrated component 183 related to Modification Example 10. In Figure 17B it shows the terminal arrangement when the main surface 183b of the filter integrated component 183 is viewed in perspective from the positive z-axis direction side.

[0364] In addition to having the Figure 17A circuit components shown, the high-frequency module 152 also includes a mounting substrate 90.

[0365] The filter integrated component 183, inductors 41 and 44 are disposed on the main surface 90a, and the integrated circuit 184 is disposed on the main surface 90b. More specifically, the filter integrated component 183 has a main surface 183a (the fourth main surface) and a main surface 183b (the third main surface), and is disposed on the mounting substrate 90 such that the main surface 183b faces the main surface 90a.

[0366] In the high-frequency module 152, when viewed from above the mounting substrate 90, at least a part of the filter integrated component 183 and the integrated circuit 184 overlap. Thus, since the surface acoustic wave filters 3A, 503A, and 503B and the low-noise amplifiers 2A, 502A, and 502B are separately disposed on the main surfaces 90a and 90b of the mounting substrate 90, and the filter integrated component 183 and the integrated circuit 184 are disposed to overlap, the high-frequency module 152 can be miniaturized.

[0367] In addition, as Figure 17B shown, the main surface 183b includes an outer peripheral region Rp1 (the first outer peripheral region) and a central region Rc1 (the first central region) located inside the outer peripheral region Rp1. The input / output terminal 123 is disposed in the central region Rc1, and the input / output terminals 523 and 524 are disposed in the outer peripheral region Rp1. In addition, the input / output terminals 113, 513, and 514 are disposed in the outer peripheral region Rp1.

[0368] Thus, since the filter integrated component 183 and the integrated circuit 184 overlap in the above top view, and the input / output terminal 123 is disposed in the central region Rc1, the wiring connecting the surface acoustic wave filter 3A and the low-noise amplifier 2A can be shortened. Therefore, the transmission loss and stray capacitance of the above wiring can be reduced, and thus the noise figure of the low-noise amplifier 2A can be improved. In addition, the isolation between the input and output of the surface acoustic wave filter 3A, and the isolation between the surface acoustic wave filter 3A and the surface acoustic wave filters 503A and 503B can be improved.

[0369] [Component arrangement of the filter integrated component 181C according to Modification 11]

[0370] Figure 18 are a top view and a cross-sectional view of the filter integrated component 181C according to Modification 11. In Figure 18 of (a), the terminal arrangement is shown when the main surface 383b of the filter chip 383 (surface acoustic wave filter 3A) is viewed in perspective from the positive z-axis direction side. In Figure 18In (b) thereof, a terminal configuration is shown in a perspective view of the main surface 783b of the filter chip 783 (the surface acoustic wave filter 503A) from the positive z-axis direction side. Further, in Figure 18 In (c) thereof, a cross-sectional view taken along line XVIII-XVIII in (a) and (b) of Figure 18 is shown.

[0371] Compared with the high-frequency module according to Modification Example 7, the high-frequency module according to Modification Example 11 differs only in the structure of the filter integration component 181C. Therefore, regarding the high-frequency module according to this modification example, the description will be centered on the structure of the filter integration component 181C.

[0372] The filter integration component 181C is an example of the first integration component and has a third main surface and a fourth main surface. The filter integration component 181C is arranged on the mounting substrate 90 such that the third main surface faces the main surface 90a. The filter integration component 181C has filter chips 383 and 783. The filter chip 383 is an example of the first filter chip and has a main surface 383a (the fourth main surface) and a main surface 383b, and includes a surface acoustic wave filter 3A. The filter chip 783 is an example of the second filter chip and has a main surface 783a and a main surface 783b (the third main surface), and includes a surface acoustic wave filter 503A.

[0373] As shown in Figure 18 (c) thereof, the filter chip 383 and the filter chip 783 are stacked. More specifically, the filter chips 383 and 783 are arranged on the mounting substrate 90 such that the main surface 90a faces the main surface 783b, and the main surface 783a faces the main surface 383b.

[0374] The input / output terminals 123 of the surface acoustic wave filter 3A are composed of a terminal 123a of the filter chip 383, a terminal 123b of the filter chip 783, and a via conductor connecting the terminals 123a and 123b.

[0375] Thus, since the surface acoustic wave filters 3A and 503A are housed in the filter integration component 181C having a stacked structure, the high-frequency module according to this modification example can be miniaturized.

[0376] Further, in the above top view, the filter integration component 181C and the integrated circuit 182 overlap, and the wiring connecting the input / output terminals 123 of the surface acoustic wave filter 3A and the input terminal 133 of the low-noise amplifier 2A can be shortened. Therefore, the transmission loss and stray capacitance of the above wiring can be reduced, and thus the noise figure of the low-noise amplifier 2A can be improved.

[0377] [Component Configuration of High-Frequency Module 153 Related to Modification Example 12]

[0378] Figure 19A This is the circuit structure diagram of the high-frequency module 153 related to Modification Example 12. As shown in this figure, the high-frequency module 153 related to this modification example includes a surface acoustic wave filter 3B and 503B, a low-noise amplifier 2B and 502B, and an inductor 41.

[0379] The surface acoustic wave filter 3B is an example of the first surface acoustic wave filter. For example, it has the same circuit structure and the same resonance characteristics of the surface acoustic wave resonator as any one of the surface acoustic wave filter 1 related to the embodiment, the surface acoustic wave filter 1A related to Modification Example 1, and the surface acoustic wave filter 1B related to Modification Example 2. The surface acoustic wave filter 3B has a common terminal 114 (the first common terminal) and an input / output terminal 123 (the first input / output terminal). The surface acoustic wave filter 3B has a passband including at least a part of frequency band A, for example.

[0380] The surface acoustic wave filter 503B is an example of the second surface acoustic wave filter. For example, it has the same circuit structure and the same resonance characteristics of the surface acoustic wave resonator as the surface acoustic wave filter 501 related to the comparative example. The surface acoustic wave filter 503B has a common terminal 114 (the first common terminal) and an input / output terminal 523 (the third input / output terminal). The surface acoustic wave filter 503B has a passband including at least a part of frequency band B, for example.

[0381] The surface acoustic wave filters 3B and 503B form a multiplexer in which the second input / output terminal and the fourth input / output terminal are commoned to the common terminal 114.

[0382] The low-noise amplifier 2B is an example of the first low-noise amplifier, and has the same circuit structure and the same amplification characteristics as the low-noise amplifier 2 related to the embodiment. The low-noise amplifier 2B has an input terminal 133. The input terminal 133 is an example of the first input terminal and is connected to the input / output terminal 123 without passing through an inductor. The low-noise amplifier 502B is an example of the second low-noise amplifier, and has the same circuit structure and the same amplification characteristics as the low-noise amplifier 2 related to the embodiment. The low-noise amplifier 502B has an input terminal 533. The input terminal 533 is an example of the second input terminal and is connected to the input / output terminal 523 through the inductor 41.

[0383] The inductor 41 is an example of the third inductor and is arranged between the low-noise amplifier 502B having a capacitive input impedance and the surface acoustic wave filter 503B.

[0384] According to the above structure, the high-frequency module 153 can transmit signals of frequency band A and signals of frequency band B simultaneously.

[0385] In this modification example, frequency band A is, for example, Band 25 for LTE or n25 for 5G NR, and frequency band B is, for example, Band 66 for LTE or n66 for 5G NR.

[0386] When the high-frequency module 153 transmits signals of frequency band A and signals of frequency band B simultaneously, since no inductor is arranged between the surface acoustic wave filter 3B and the low-noise amplifier 2B, it is possible to suppress the interference between the signals of frequency band A and the signals of frequency band B and the deterioration of the isolation degree between the path connecting the surface acoustic wave filter 3B and the low-noise amplifier 2B and the path connecting the surface acoustic wave filter 503B and the low-noise amplifier 502B.

[0387] The surface acoustic wave filters 3B and 503B are included in the filter integration component 185. The filter integration component 185 is an example of the first integration component. For example, it has a structure in which surface acoustic wave resonators of the surface acoustic wave filters 3B and 503B are arranged on a common piezoelectric substrate.

[0388] Next, the component arrangement of the high-frequency module 153 according to this modification example will be described. Figure 19B It is a top view of the high-frequency module 153 according to Modification Example 12. In Figure 19B It shows the arrangement of circuit components when the main surface 90a of the mounting substrate 90 is viewed in perspective from the positive z-axis direction side. In addition, in Figure 19B The circuit components arranged on the main surface 90a side are shown by solid lines, and the terminals arranged on the main surface 90b side are shown by dashed lines.

[0389] As Figure 19B shown, the high-frequency module 153 further includes a mounting substrate 90 in addition to the Figure 19A shown circuit components. The mounting substrate 90 has main surfaces 90a (the first main surface) and 90b (the second main surface) that face each other.

[0390] As Figure 19B shown, the filter integration component 185 and the inductor 41 are arranged on the main surface 90a, and the input terminal 133 of the low-noise amplifier 2B and the input terminal 533 of the low-noise amplifier 502B are arranged on the main surface 90b. In addition, although in Figure 19BAlthough not shown in the figure, the low-noise amplifiers 2B and 502B are arranged on the main surface 90b. More specifically, the filter integrated component 185 has a main surface 185a (the fourth main surface) and a main surface 185b (the third main surface), and is arranged on the mounting substrate 90 such that the main surface 185b faces the main surface 90a. The input / output terminals 123 and 523 and the common terminal 114 are arranged on the main surface 185b.

[0391] Here, as Figure 19B shown, the distance D3 between the input / output terminal 123 and the common terminal 114 is smaller than the distance D503 between the input / output terminal 523 and the common terminal 114.

[0392] Accordingly, since the distance between the input / output terminal 523 to which the inductor 41 is connected and the common terminal 114 can be ensured, it is possible to suppress the interference between the signal input to the SAW filters 3B and 503B and the signal output from the SAW filter 503B. Therefore, it is possible to suppress the deterioration of the isolation between the input and output of the multiplexer formed by the SAW filters 3B and 503B.

[0393] [Component arrangement of the high-frequency module 154 according to Modification 13]

[0394] Figure 20A is a circuit structure diagram of the high-frequency module 154 according to Modification 13. As shown in this figure, the high-frequency module 154 according to this modification includes SAW filters 3C, 3D, 503C, and 503D, low-noise amplifiers 2C and 502C, inductors 41, 44, 46, and 47, and switches 76 and 77.

[0395] The SAW filters 3C and 3D are each an example of the first SAW filter. For example, they have the same circuit structure and the same resonance characteristics of the SAW resonators as any one of the SAW filter 1 according to the embodiment, the SAW filter 1A according to Modification 1, and the SAW filter 1B according to Modification 2.

[0396] The SAW filter 3C has a common terminal 116 (the first common terminal) and an input / output terminal 124 (the first input / output terminal). The SAW filter 3C has, for example, a passband including at least a part of the frequency band A. The SAW filter 3D has a common terminal 115 and an input / output terminal 125. The SAW filter 3D has, for example, a passband including at least a part of the frequency band C.

[0397] The SAW filters 503C and 503D are each an example of the second SAW filter. For example, they have the same circuit structure and the same resonance characteristics of the SAW resonators as the SAW filter 501 according to the comparative example.

[0398] The elastic wave filter 503C has a common terminal 116 (first common terminal) and an input / output terminal 524 (third input / output terminal). The elastic wave filter 503C has, for example, a passband including at least a part of a frequency band B. The elastic wave filter 503D has a common terminal 115 and an input / output terminal 525. The elastic wave filter 503D has, for example, a passband including at least a part of a frequency band D.

[0399] The elastic wave filters 3C and 503C constitute a multiplexer in which the second input / output terminal and the fourth input / output terminal are commoned to the common terminal 116. The elastic wave filters 3D and 503D constitute a multiplexer having a common terminal 115.

[0400] The low-noise amplifier 2C is an example of a first low-noise amplifier, and has the same circuit structure and the same amplification characteristics as the low-noise amplifier 2 according to the embodiment. The low-noise amplifier 2C has an input terminal 133. The input terminal 133 is an example of a first input terminal, and is connected to the input / output terminals 124 and 125 without passing through an inductor. The low-noise amplifier 502C is an example of a second low-noise amplifier, and has the same circuit structure and the same amplification characteristics as the low-noise amplifier 2 according to the embodiment. The low-noise amplifier 502C has an input terminal 533. The input terminal 533 is an example of a second input terminal, and is connected to the input / output terminal 524 via an inductor 41 and is connected to the input / output terminal 525 via an inductor 44.

[0401] The inductor 41 is an example of a third inductor, and is disposed between the low-noise amplifier 502C having a capacitive input impedance and the elastic wave filter 503C. The inductor 44 is disposed between the low-noise amplifier 502C having a capacitive input impedance and the elastic wave filter 503D.

[0402] The inductor 46 is connected to the common terminal 115 to achieve impedance matching between the elastic wave filters 3D and 503D and an external circuit connected to the common terminal 115. The inductor 47 is connected to the common terminal 116 to achieve impedance matching between the elastic wave filters 3C and 503C and an external circuit connected to the common terminal 116.

[0403] The switch 76 has a common terminal, selection terminals 76a and 76b, and switches the connection between the common terminal and the selection terminal 76a and the connection between the common terminal and the selection terminal 76b. The common terminal is connected to the input terminal 533, the selection terminal 76a is connected to the elastic wave filter 503D via the inductor 44, and the selection terminal 76b is connected to the elastic wave filter 503C via the inductor 41.

[0404] The switch 77 has a common terminal, selection terminals 77a and 77b, and switches the connection between the common terminal and the selection terminal 77a and the connection between the common terminal and the selection terminal 77b. The common terminal is connected to the input terminal 133, the selection terminal 77a is connected to the SAW filter 3D without passing through an inductor, and the selection terminal 77b is connected to the SAW filter 3C without passing through an inductor.

[0405] According to the above structure, the high-frequency module 154 can switch and execute (1) simultaneous transmission of signals in band A and signals in band B, and (2) simultaneous transmission of signals in band C and signals in band D.

[0406] In this modification, band A is, for example, Band25 for LTE or n25 for 5G NR, band B is, for example, Band66 for LTE or n66 for 5G NR, band C is, for example, Band3 for LTE or n3 for 5G NR, and band D is, for example, Band1 for LTE or n1 for 5G NR.

[0407] When the high-frequency module 154 simultaneously transmits signals in band A and signals in band B, since no inductor is arranged between the SAW filter 3C and the low-noise amplifier 2C, it is possible to suppress the deterioration of isolation due to interference between the signals in band A and the signals in band B between the path connecting the SAW filter 3C and the low-noise amplifier 2C and the path connecting the SAW filter 503C and the low-noise amplifier 502C. In addition, when the high-frequency module 154 simultaneously transmits signals in band C and signals in band D, since no inductor is arranged between the SAW filter 3D and the low-noise amplifier 2C, it is possible to suppress the deterioration of isolation due to interference between the signals in band C and the signals in band D between the path connecting the SAW filter 3D and the low-noise amplifier 2C and the path connecting the SAW filter 503D and the low-noise amplifier 502C.

[0408] Here, band B is on the high-frequency side of band A, and band D is on the high-frequency side of band C. From the viewpoint of impedance matching between the low-noise amplifier and the SAW filter, the lower the corresponding frequency of the transmission path, the greater the inductance value of the inductor arranged in the transmission path needs to be, and the greater the resistance component of the inductor becomes. From this viewpoint, in the high-frequency module 154 according to this modification, among the two transmission paths for simultaneous transmission, no inductor is arranged in the transmission path with a lower corresponding frequency (band A and band C), and inductors 41 and 44 are respectively arranged in the transmission paths with a higher corresponding frequency (band B and band D).

[0409] Thereby, the transmission loss of the wiring connecting the SAW filter and the low-noise amplifier can be reduced, and thus the noise figure of the low-noise amplifier 2C can be improved.

[0410] In addition, frequency bands A, B, C, and D can also be arranged in the order of frequency band B, frequency band A (or frequency band C), frequency band C (or frequency band A), and frequency band D starting from the low-frequency side or the high-frequency side. The greater the frequency difference, the greater the difference in the inductance values of the inductors arranged between the surface acoustic wave filter and the low-noise amplifier, and the lower the magnetic coupling degree. Thus, since frequency bands B and D are not transmitted simultaneously and the frequency difference is the largest, deterioration of the isolation degree between different paths can be suppressed.

[0411] In this case, for example, frequency band A is Band25 for LTE or n25 for 5G NR, frequency band B is Band66 for LTE or n66 for 5G NR, frequency band C is Band1 for LTE or n1 for 5G NR, and frequency band D is Band3 for LTE or n3 for 5G NR. In addition, it is also possible that the surface acoustic wave filters 3D and 503C are connected to the low-noise amplifier 502C, and the surface acoustic wave filters 3C and 503D are connected to the low-noise amplifier 2C.

[0412] The surface acoustic wave filters 3C and 503C are included in the filter integrated component 187. The filter integrated component 187 is an example of the first integrated component and has, for example, a structure in which surface acoustic wave resonators of the surface acoustic wave filters 3C and 503C are arranged on a common piezoelectric substrate. The surface acoustic wave filters 3D and 503D are included in the filter integrated component 186. The filter integrated component 186 is an example of the first integrated component and has, for example, a structure in which surface acoustic wave resonators of the surface acoustic wave filters 3D and 503D are arranged on a common piezoelectric substrate.

[0413] Next, the component arrangement of the high-frequency module 154 according to this modification example will be described. Figure 20B is a top view of the high-frequency module 154 according to Modification Example 13. In Figure 20B is shown the arrangement of circuit components when the main surface 90a of the mounting substrate 90 is viewed in perspective from the positive z-axis direction side. In addition, in Figure 20B circuit components arranged on the main surface 90a side are shown by solid lines, and terminals arranged on the main surface 90b side are shown by dashed lines.

[0414] As Figure 20B shown, in addition to including the Figure 20A circuit components shown, the high-frequency module 154 further includes a mounting substrate 90. The mounting substrate 90 has main surfaces 90a (first main surface) and 90b (second main surface) that face each other.

[0415] As Figure 20BAs shown, filter integrated components 186, 187, inductors 41, 44, 46, and 47 are arranged on the main surface 90a, and the selection terminals 76a and 76b of switch 76 and the selection terminals 77a and 77b of switch 77 are arranged on the main surface 90b. In addition, although not shown in Figure 20B , low-noise amplifiers 2C and 502C are arranged on the main surface 90b. More specifically, filter integrated component 186 has a main surface 186a and a main surface 186b, and is arranged on the mounting substrate 90 such that the main surface 186b faces the main surface 90a. Input / output terminals 125 and 525, and a common terminal 115 are arranged on the main surface 186b. In addition, filter integrated component 187 has a main surface 187a and a main surface 187b, and is arranged on the mounting substrate 90 such that the main surface 187b faces the main surface 90a. Input / output terminals 124 and 524, and a common terminal 116 are arranged on the main surface 187b.

[0416] Here, as Figure 20B shown, the distance D3D between the input / output terminal 125 and the common terminal 115 is less than the distance D503D between the input / output terminal 525 and the common terminal 115. In addition, the distance D3C between the input / output terminal 124 and the common terminal 116 is less than the distance D503C between the input / output terminal 524 and the common terminal 116.

[0417] Accordingly, since the distance between the input / output terminal 524 connected to the inductor 41 and the common terminal 116 can be ensured, it is possible to suppress the interference between the signal input to the surface acoustic wave filters 3D and 503D and the signal output from the surface acoustic wave filter 503D. Therefore, it is possible to suppress the deterioration of the isolation between the input and output of the multiplexer constituted by the surface acoustic wave filters 3D and 503D. In addition, since the distance between the input / output terminal 525 connected to the inductor 44 and the common terminal 115 can be ensured, it is possible to suppress the interference between the signal input to the surface acoustic wave filters 3C and 503C and the signal output from the surface acoustic wave filter 503C. Therefore, it is possible to suppress the deterioration of the isolation between the input and output of the multiplexer constituted by the surface acoustic wave filters 3C and 503C.

[0418] In addition, inductors 41 and 44 are configured to face input / output terminals 125 and 525 of filter integrated component 186, and inductors 46 and 47 are configured to face common terminal 116 of filter integrated component 187. Thus, since the distance between inductor 47 connected to the input side of SAW filters 3C and 503C and inductor 41 connected to the output side can be ensured, magnetic field coupling between the inductors disposed at the input / output terminals of SAW filters 3C and 503C can be suppressed. In addition, since the distance between inductor 46 connected to the input side of SAW filters 3D and 503D and inductor 44 connected to the output side can be ensured, magnetic field coupling between the inductors disposed at the input / output terminals of SAW filters 3D and 503D can be suppressed. Therefore, deterioration of the isolation between the input and output of the SAW filter can be suppressed.

[0419] [Component arrangement of high-frequency module 155 according to Modification 14]

[0420] Figure 21A is a circuit configuration diagram of high-frequency module 155 according to Modification 14. As shown in this figure, high-frequency module 155 according to this modification includes SAW filters 3C, 503C, and 503E, low-noise amplifiers 2C, 502C, and 502E, and inductors 41 and 44.

[0421] SAW filter 3C is an example of a first SAW filter. For example, it has the same circuit configuration and the same resonance characteristics of the SAW resonator as any one of SAW filter 1 according to the embodiment, SAW filter 1A according to Modification 1, and SAW filter 1B according to Modification 2. SAW filter 3C has common terminal 117 (first common terminal) and input / output terminal 124 (first input / output terminal). SAW filter 3C has a passband including at least a part of frequency band A, for example.

[0422] SAW filters 503C and 503E are examples of second SAW filters, respectively. For example, they have the same circuit configuration and the same resonance characteristics of the SAW resonator as SAW filter 501 according to the comparative example. SAW filter 503C has common terminal 117 (first common terminal) and input / output terminal 524 (third input / output terminal). SAW filter 503C has a passband including at least a part of frequency band B, for example. SAW filter 503E has common terminal 117 and input / output terminal 526. SAW filter 503E has a passband including at least a part of frequency band C, for example.

[0423] SAW filters 3C, 503C, and 503E constitute a multiplexer commonly connected to common terminal 117.

[0424] The low-noise amplifier 2C is an example of the first low-noise amplifier, having the same circuit structure and the same amplification characteristics as the low-noise amplifier 2 related to the embodiment. The low-noise amplifier 2C has an input terminal 133. The input terminal 133 is an example of the first input terminal and is connected to the input / output terminal 124 without passing through an inductor. The low-noise amplifier 502C is an example of the second low-noise amplifier, having the same circuit structure and the same amplification characteristics as the low-noise amplifier 2 related to the embodiment. The low-noise amplifier 502C has an input terminal 533. The input terminal 533 is an example of the second input terminal and is connected to the input / output terminal 524 via an inductor 41. The low-noise amplifier 502E is an example of the second low-noise amplifier, having the same circuit structure and the same amplification characteristics as the low-noise amplifier 2 related to the embodiment. The low-noise amplifier 502E has an input terminal 534. The input terminal 534 is an example of the second input terminal and is connected to the input / output terminal 526 via an inductor 44.

[0425] The inductor 41 is an example of the third inductor and is arranged between the low-noise amplifier 502C having a capacitive input impedance and the surface acoustic wave filter 503C. The inductor 44 is an example of the third inductor and is arranged between the low-noise amplifier 502E having a capacitive input impedance and the surface acoustic wave filter 503E.

[0426] According to the above structure, the high-frequency module 155 can perform (1) simultaneous transmission of signals in frequency band A, frequency band B, and frequency band C.

[0427] In this modified example, frequency band A is, for example, Band25 for LTE or n25 for 5G NR, frequency band B is, for example, Band66 for LTE or n66 for 5G NR, and frequency band C is, for example, Band30 for LTE or n30 for 5G NR.

[0428] The surface acoustic wave filters 3C, 503C, and 503E are included in the filter integrated component 188. The filter integrated component 188 is an example of the first integrated component and has, for example, a structure in which surface acoustic wave resonators of the surface acoustic wave filters 3C, 503C, and 503E are arranged on a common piezoelectric substrate.

[0429] Next, the component arrangement of the high-frequency module 155 related to this modified example will be described. Figure 21B It is a top view of the high-frequency module 155 related to Modified Example 14. In Figure 21B it, the arrangement of circuit components is shown in the case of a perspective view of the main surface 90a of the mounting substrate 90 from the positive z-axis direction side. In addition, in Figure 21BIn [the figure], circuit components arranged on the main surface 90a side are shown by solid lines, and circuit components arranged on the main surface 90b side are shown by dashed lines.

[0430] As Figure 21B shown, in addition to the circuit components shown Figure 21A as such, the high-frequency module 155 further includes a mounting substrate 90. The mounting substrate 90 has main surfaces 90a (first main surface) and 90b (second main surface) that face each other.

[0431] As Figure 21B shown, the filter integrated component 188, inductors 41 and 44 are arranged on the main surface 90a, and the low-noise amplifiers 2C, 502C and 502E are arranged on the main surface 90b. More specifically, the filter integrated component 188 has a main surface 188a and a main surface 188b, and is arranged on the mounting substrate 90 such that the main surface 188b faces the main surface 90a. The input / output terminals 124, 524 and 526, and the common terminal 117 are arranged on the main surface 188b.

[0432] Here, as Figure 21B shown, when the mounting substrate 90 is viewed from above, the input / output terminal 124 overlaps with the low-noise amplifier 2C, the input / output terminal 524 does not overlap with the low-noise amplifier 502C, and the input / output terminal 526 does not overlap with the low-noise amplifier 502E.

[0433] Thereby, the wiring for connecting the surface acoustic wave filter 3C and the low-noise amplifier 2C without passing through the inductor can be shortened. Therefore, the transmission loss and stray capacitance of the above-mentioned wiring can be reduced, and thus the noise figure of the low-noise amplifier 2C can be improved.

[0434] [Component arrangement of the high-frequency module 156 according to Modification Example 15]

[0435] Figure 22A is a circuit structure diagram of the high-frequency module 156 according to Modification Example 15. As shown in this figure, the high-frequency module 156 according to this modification example includes surface acoustic wave filters 3E, 3F and 503F, low-noise amplifiers 2E, 2F and 502F, and an inductor 41.

[0436] The elastic wave filters 3E and 3F are examples of the first elastic wave filter. For example, they have the same circuit structure and the same resonant characteristics of the elastic wave resonator as any one of the elastic wave filter 1 according to the embodiment, the elastic wave filter 1A according to the first modification example, and the elastic wave filter 1B according to the second modification example. The elastic wave filter 3E has a common terminal 118 (the first common terminal) and an input / output terminal 126 (the first input / output terminal). The elastic wave filter 3E has, for example, a passband including at least a part of the frequency band B. The elastic wave filter 3F has a common terminal 118 (the first common terminal) and an input / output terminal 127. The elastic wave filter 3F has, for example, a passband including at least a part of the frequency band C.

[0437] The elastic wave filter 503F is an example of the second elastic wave filter. For example, it has the same circuit structure and the same resonant characteristics of the elastic wave resonator as the elastic wave filter 501 according to the comparative example. The elastic wave filter 503F has a common terminal 118 (the first common terminal) and an input / output terminal 527 (the third input / output terminal). The elastic wave filter 503F has, for example, a passband including at least a part of the frequency band A.

[0438] The elastic wave filters 3E, 3F, and 503F constitute a multiplexer commonly connected to the common terminal 118.

[0439] The low-noise amplifiers 2E and 2F are examples of the first low-noise amplifier, and have the same circuit structure and the same amplification characteristics as the low-noise amplifier 2 according to the embodiment. The low-noise amplifier 2E has an input terminal 133. The input terminal 133 is an example of the first input terminal and is connected to the input / output terminal 126 without passing through an inductor. The low-noise amplifier 2F has an input terminal 134. The input terminal 134 is not connected to the input / output terminal 127 through an inductor. The low-noise amplifier 502F is an example of the second low-noise amplifier, and has the same circuit structure and the same amplification characteristics as the low-noise amplifier 2 according to the embodiment. The low-noise amplifier 502F has an input terminal 533. The input terminal 533 is an example of the second input terminal and is connected to the input / output terminal 527 through an inductor 41.

[0440] The inductor 41 is an example of the third inductor and is arranged between the low-noise amplifier 502F having a capacitive input impedance and the elastic wave filter 503F.

[0441] According to the above structure, the high-frequency module 156 can perform (1) simultaneous transmission of signals in the frequency band A, the frequency band B, and the frequency band C.

[0442] In this modified example, frequency band A is, for example, Band 25 for LTE or n25 for 5G NR, frequency band B is, for example, Band 66 for LTE or n66 for 5G NR, and frequency band C is, for example, Band 30 for LTE or n30 for 5G NR.

[0443] The surface acoustic wave filters 3E, 3F, and 503F are included in the filter integrated component 189. The filter integrated component 189 is an example of the first integrated component and has, for example, a structure in which surface acoustic wave resonators of the surface acoustic wave filters 3E, 3F, and 503F are arranged on a common piezoelectric substrate.

[0444] Next, the component arrangement of the high-frequency module 156 according to this modified example will be described. Figure 22B is a top view of the high-frequency module 156 according to Modified Example 15. In Figure 22B , the arrangement of circuit components is shown when the main surface 90a of the mounting substrate 90 is viewed in perspective from the positive z-axis direction side. In addition, in Figure 22B , the circuit components arranged on the main surface 90a side are shown by solid lines, and the circuit components arranged on the main surface 90b side are shown by dashed lines.

[0445] As Figure 22B shows, the high-frequency module 156 includes, in addition to the Figure 22A shown circuit components, a mounting substrate 90. The mounting substrate 90 has main surfaces 90a (first main surface) and 90b (second main surface) that face each other.

[0446] As Figure 22B shows, the filter integrated component 189 and the inductor 41 are arranged on the main surface 90a, and the low-noise amplifiers 2E, 2F, and 502F are arranged on the main surface 90b. More specifically, the filter integrated component 189 has a main surface 189a and a main surface 189b and is arranged on the mounting substrate 90 such that the main surface 189b faces the main surface 90a. The input / output terminals 126, 127, and 527, and the common terminal 118 are arranged on the main surface 189b.

[0447] Here, as Figure 22B shows, when the mounting substrate 90 is viewed from above, the input / output terminal 126 overlaps with the low-noise amplifier 2E, the input / output terminal 127 overlaps with the low-noise amplifier 2F, and the input / output terminal 527 does not overlap with the low-noise amplifier 502F.

[0448] Accordingly, it is possible to shorten the wirings connecting the SAW filter 3E not connected via an inductor and the low-noise amplifier 2E, and the wirings connecting the SAW filter 3F not connected via an inductor and the low-noise amplifier 2F. Therefore, it is possible to reduce the transmission loss and stray capacitance of the above wirings, and thus improve the noise figure of the low-noise amplifiers 2E and 2F.

[0449] In addition, the main surface 189b of the filter integrated component 189 has a rectangular shape when viewed from above. The input / output terminals 126, 127, and 527, and the common terminal 118 are respectively arranged at the corners of the main surface 189b. Accordingly, it is possible to ensure the isolation between the input and output terminals of the SAW filters 3E, 3F, and 503F, and the isolation between the output terminals of the SAW filter 3E, the output terminal of the SAW filter 3F, and the output terminal of the SAW filter 503F.

[0450] In addition, the distance D503F between the input / output terminal 527 and the common terminal 118 is the largest among the distance D3E between the input / output terminal 126 and the common terminal 118, the distance D3F between the input / output terminal 127 and the common terminal 118, and the distance D503F. Accordingly, by arranging the input / output terminal 527 of the SAW filter 503F having the inductor 41 arranged on the output side farthest from the common terminal 118 among the input / output terminals 126, 127, and 527, it is possible to suppress the deterioration of the isolation caused by the magnetic field coupling between the inductor 41 and the common terminal 118.

[0451] [Component Arrangement of the High-Frequency Module 157 According to Modification Example 16]

[0452] Figure 23A is a circuit structure diagram of the high-frequency module 157 according to Modification Example 16. As shown in this figure, the high-frequency module 157 according to this modification example includes SAW filters 4A, 4B, 4C, 5A, 5B, and 5C, low-noise amplifiers 7A, 7B, 7C, 7D, 7E, and 7F, a switch 78, and an antenna connection terminal 150.

[0453] The SAW filters 4A to 4C and 5A to 5C are each an example of the first SAW filter. For example, they have the same circuit structure and the same resonance characteristics of the SAW resonators as any one of the SAW filter 1 according to the embodiment, the SAW filter 1A according to Modification Example 1, and the SAW filter 1B according to Modification Example 2.

[0454] The elastic wave filter 4A has input / output terminals 161 (first input / output terminals) and input / output terminals 141 (second input / output terminals), and has a passband including at least a part of a frequency band A belonging to a medium frequency band group (1427 to 2200 MHz, hereinafter referred to as MB), for example. The elastic wave filter 4B has input / output terminals 142 and 162, and has a passband including at least a part of a frequency band B belonging to MB, for example. The elastic wave filter 4C has input / output terminals 143 and 163, and has a passband including at least a part of a frequency band C belonging to MB, for example. In addition, the frequency band A, the frequency band B, and the frequency band C may be the same frequency band.

[0455] The elastic wave filter 5A has input / output terminals 144 and 164, and has a passband including at least a part of a frequency band D belonging to MB, for example. The elastic wave filter 5B has input / output terminals 145 and 165, and has a passband including at least a part of a frequency band E belonging to MB, for example. The elastic wave filter 5C has input / output terminals 146 and 166, and has a passband including at least a part of a frequency band F belonging to MB, for example. In addition, the frequency band D, the frequency band E, and the frequency band F may be the same frequency band.

[0456] The low-noise amplifiers 7A to 7F are each an example of a first low-noise amplifier, and have the same circuit structure and the same amplification characteristics as the low-noise amplifier 2 according to the embodiment. The low-noise amplifier 7A has an input terminal 171. The input terminal 171 is an example of a first input terminal and is connected to the input / output terminal 161 without passing through an inductor. The low-noise amplifier 7B has an input terminal 172. The input terminal 172 is connected to the input / output terminal 162 without passing through an inductor. The low-noise amplifier 7C has an input terminal 173. The input terminal 173 is connected to the input / output terminal 163 without passing through an inductor. The low-noise amplifier 7D has an input terminal 174. The input terminal 174 is connected to the input / output terminal 164 without passing through an inductor. The low-noise amplifier 7E has an input terminal 175. The input terminal 175 is connected to the input / output terminal 165 without passing through an inductor. The low-noise amplifier 7F has an input terminal 176. The input terminal 176 is connected to the input / output terminal 166 without passing through an inductor.

[0457] The switch 78 is connected between the antenna connection terminal 150 and the elastic wave filters 4A to 4C and 5A to 5C, and has a common terminal and a plurality of selection terminals. The antenna connection terminal 150 is connected to the common terminal of the switch 78 and the antenna. The plurality of selection terminals of the switch 78 are connected to the elastic wave filters 4A to 4C and 5A to 5C in a one-to-one manner.

[0458] According to the above structure, the high-frequency module 157 can perform (1) separate transmission of any one signal in frequency bands A to F, and (2) simultaneous transmission of two or more signals among frequency bands A to F.

[0459] The surface acoustic wave filters 4A and 4B are included in the filter integration component 191. The filter integration component 191 is an example of the first integration component. For example, it has a structure in which surface acoustic wave resonators of the surface acoustic wave filters 4A and 4B are arranged on a common piezoelectric substrate. The surface acoustic wave filters 4C and 5A are included in the filter integration component 192. The filter integration component 192, for example, has a structure in which surface acoustic wave resonators of the surface acoustic wave filters 4C and 5A are arranged on a common piezoelectric substrate. The surface acoustic wave filters 5B and 5C are included in the filter integration component 193. The filter integration component 193, for example, has a structure in which surface acoustic wave resonators of the surface acoustic wave filters 5B and 5C are arranged on a common piezoelectric substrate.

[0460] The low-noise amplifiers 7A to 7F are included in the integrated circuit 190. The integrated circuit 190 is an example of the second integration component. For example, it is formed using CMOS and can specifically be manufactured by an SOI process. In addition, the integrated circuit 190 is not limited to CMOS.

[0461] Next, the component arrangement of the high-frequency module 157 according to this modification example will be described. Figure 23B It is a top view of the high-frequency module 157 according to Modification Example 16. In Figure 23B it, the arrangement of circuit components is shown when the main surface 90a of the mounting substrate 90 is viewed in perspective from the positive z-axis direction side.

[0462] As Figure 23B shown, the high-frequency module 157 includes, in addition to the Figure 23A circuit components shown, a mounting substrate 90. The mounting substrate 90 has opposing main surfaces 90a (first main surface) and 90b (second main surface).

[0463] As Figure 23BAs shown, filter integrated components 191, 192, and 193, integrated circuit 190, switch 78, and antenna connection terminal 150 are arranged on the main surface 90a. More specifically, filter integrated component 191 has a main surface 191a and a main surface 191b, and is arranged on mounting substrate 90 such that main surface 191b faces main surface 90a. Input / output terminals 141, 142, 161, and 162 are arranged on main surface 191b. Filter integrated component 192 has a main surface 192a and a main surface 192b, and is arranged on mounting substrate 90 such that main surface 192b faces main surface 90a. Input / output terminals 143, 144, 163, and 164 are arranged on main surface 192b. Filter integrated component 193 has a main surface 193a and a main surface 193b, and is arranged on mounting substrate 90 such that main surface 193b faces main surface 90a. Input / output terminals 145, 146, 165, and 166 are arranged on main surface 193b.

[0464] Here, as Figure 23B shown, when looking down at mounting substrate 90, input / output terminal 161 and input terminal 171 are close, input / output terminal 162 and input terminal 172 are close, input / output terminal 163 and input terminal 173 are close, input / output terminal 164 and input terminal 174 are close, input / output terminal 165 and input terminal 175 are close, and input / output terminal 166 and input terminal 176 are close.

[0465] Thereby, the wiring connecting surface acoustic wave filters 4A to 4C and 5A to 5C and low-noise amplifiers 7A to 7F can be shortened. Therefore, the transmission loss and stray capacitance of the above-mentioned wiring can be reduced, and thus the noise figure of low-noise amplifiers 7A to 7F can be improved. In addition, overlapping of each wiring can be suppressed, so the isolation between signals passing through surface acoustic wave filters 4A to 4C and 5A to 5C can be improved.

[0466] In addition, if the arrangement relationship between surface acoustic wave filters 4A to 4C and 5A to 5C and low-noise amplifiers 7A to 7F is described in other words, it is as follows: main surfaces 191b, 192b, 193b, and 190b each have a rectangular shape, and the outer side of main surface 191b closest to input / output terminals 161 and 162 faces the outer side of main surface 190b closest to input terminals 171 and 172, the outer side of main surface 192b closest to input / output terminals 163 and 164 faces the outer side of main surface 190b closest to input terminals 173 and 174, and the outer side of main surface 193b closest to input / output terminals 165 and 166 faces the outer side of main surface 190b closest to input terminals 175 and 176. Thereby, the wiring connecting surface acoustic wave filters 4A to 4C and 5A to 5C and low-noise amplifiers 7A to 7F can be shortened.

[0467] [Component configuration of the high-frequency module 158 according to Modification Example 17]

[0468] Figure 24A This is a circuit structure diagram of the high-frequency module 158 according to Modification Example 17. As shown in this figure, the high-frequency module 158 according to this modification example includes surface acoustic wave filters 504A, 504B, 504C, 5A, 5B, and 5C, low-noise amplifiers 507A, 507B, 507C, 7D, 7E, and 7F, inductors 41A, 41B, and 41C, a switch 78, and an antenna connection terminal 150.

[0469] The surface acoustic wave filters 5A to 5C are each an example of a first surface acoustic wave filter. For example, they have the same circuit structure and the same resonance characteristics of the surface acoustic wave resonator as any one of the surface acoustic wave filter 1 according to the embodiment, the surface acoustic wave filter 1A according to Modification Example 1, and the surface acoustic wave filter 1B according to Modification Example 2. The surface acoustic wave filter 5A has an input / output terminal 164 (first input / output terminal) and an input / output terminal 144 (second input / output terminal), and for example, has a passband including at least a part of the frequency band D belonging to MB. The surface acoustic wave filter 5B has input / output terminals 145 and 165, and for example, has a passband including at least a part of the frequency band E belonging to MB. The surface acoustic wave filter 5C has input / output terminals 146 and 166, and for example, has a passband including at least a part of the frequency band F belonging to MB. In addition, the frequency band D, the frequency band E, and the frequency band F may also be the same frequency band.

[0470] The surface acoustic wave filters 504A to 504C are each an example of a second surface acoustic wave filter. For example, they have the same circuit structure and the same resonance characteristics of the surface acoustic wave resonator as the surface acoustic wave filter 501 according to the comparative example. The surface acoustic wave filter 504A has an input / output terminal 561 (third input / output terminal) and an input / output terminal 551 (fourth input / output terminal), and for example, has a passband including at least a part of the frequency band A belonging to MB. The surface acoustic wave filter 504B has input / output terminals 552 and 562, and for example, has a passband including at least a part of the frequency band B belonging to MB. The surface acoustic wave filter 504C has input / output terminals 553 and 563, and for example, has a passband including at least a part of the frequency band C belonging to MB. In addition, the frequency band A, the frequency band B, and the frequency band C may also be the same frequency band.

[0471] The low-noise amplifiers 7D to 7F are examples of the first low-noise amplifier, and have the same circuit structure and the same amplification characteristics as the low-noise amplifier 2 according to the embodiment. The low-noise amplifier 7D has an input terminal 174. The input terminal 174 is an example of the first input terminal and is connected to the input / output terminal 164 without passing through an inductor. The low-noise amplifier 7E has an input terminal 175. The input terminal 175 is connected to the input / output terminal 165 without passing through an inductor. The low-noise amplifier 7F has an input terminal 176. The input terminal 176 is connected to the input / output terminal 166 without passing through an inductor.

[0472] The low-noise amplifiers 507A to 507C are examples of the second low-noise amplifier, and have the same circuit structure and the same amplification characteristics as the low-noise amplifier 2 according to the embodiment. The low-noise amplifier 507A has an input terminal 571. The input terminal 571 is an example of the second input terminal and is connected to the input / output terminal 561 through an inductor 41A. The low-noise amplifier 507B has an input terminal 572. The input terminal 572 is connected to the input / output terminal 562 through an inductor 41B. The low-noise amplifier 507C has an input terminal 573. The input terminal 573 is connected to the input / output terminal 563 through an inductor 41C.

[0473] The inductor 41A is an example of the third inductor and is disposed between the low-noise amplifier 507A having a capacitive input impedance and the surface acoustic wave filter 504A. The inductor 41B is disposed between the low-noise amplifier 507B having a capacitive input impedance and the surface acoustic wave filter 504B. The inductor 41C is disposed between the low-noise amplifier 507C having a capacitive input impedance and the surface acoustic wave filter 504C.

[0474] The switch 78 is connected between the antenna connection terminal 150 and the surface acoustic wave filters 5A to 5C and 504A to 504C, and has a common terminal and a plurality of selection terminals. The antenna connection terminal 150 is connected to the common terminal of the switch 78 and the antenna. The plurality of selection terminals of the switch 78 are connected to the surface acoustic wave filters 5A to 5C and 504A to 504C in a one-to-one manner.

[0475] According to the above structure, the high-frequency module 158 can perform (1) separate transmission of any one signal in frequency bands A to F, and (2) simultaneous transmission of two or more signals among frequency bands A to F.

[0476] The elastic wave filters 504A and 504B are included in the filter integrated component 194. The filter integrated component 194 has, for example, a structure in which the elastic wave resonators of the elastic wave filters 504A and 504B are arranged on a common piezoelectric substrate. The elastic wave filters 504C and 5A are included in the filter integrated component 195. The filter integrated component 195 has, for example, a structure in which the elastic wave resonators of the elastic wave filters 504C and 5A are arranged on a common piezoelectric substrate. The elastic wave filters 5B and 5C are included in the filter integrated component 193. The filter integrated component 193 has, for example, a structure in which the elastic wave resonators of the elastic wave filters 5B and 5C are arranged on a common piezoelectric substrate.

[0477] The low noise amplifiers 507A to 507C and 7D to 7F are included in the integrated circuit 190. The integrated circuit 190 is an example of the second integrated component and is formed, for example, using CMOS and can be specifically manufactured by the SOI process. In addition, the integrated circuit 190 is not limited to CMOS.

[0478] Next, the component arrangement of the high-frequency module 158 according to this modified example will be described. Figure 24B is a top view of the high-frequency module 158 according to Modified Example 17. In Figure 24B it shows the arrangement of circuit components when the main surface 90a of the mounting substrate 90 is viewed in perspective from the positive z-axis direction side.

[0479] As Figure 24B shown, the high-frequency module 158 includes, in addition to the Figure 24A circuit components shown, a mounting substrate 90. The mounting substrate 90 has main surfaces 90a (first main surface) and 90b (second main surface) facing each other.

[0480] As Figure 24BAs shown, filter integrated components 193, 194, and 195, integrated circuit 190, inductors 41A, 41B, and 41C, switch 78, and antenna connection terminal 150 are disposed on main surface 90a. More specifically, filter integrated component 194 has main surface 194a and main surface 194b, and is disposed on mounting substrate 90 such that main surface 194b faces main surface 90a. Input / output terminals 551, 552, 561, and 562 are disposed on main surface 194b. Filter integrated component 195 has main surface 195a and main surface 195b, and is disposed on mounting substrate 90 such that main surface 195b faces main surface 90a. Input / output terminals 553, 144, 563, and 164 are disposed on main surface 195b. Filter integrated component 193 has main surface 193a and main surface 193b, and is disposed on mounting substrate 90 such that main surface 193b faces main surface 90a. Input / output terminals 145, 146, 165, and 166 are disposed on main surface 193b.

[0481] Here, as Figure 24B shown, when mounting substrate 90 is viewed from above, filter integrated component 193 is closer to integrated circuit 190 than filter integrated component 194. Thereby, the wiring connecting surface acoustic wave filters 5B and 5C and low noise amplifiers 7E and 7F can be shortened. Accordingly, the transmission loss and stray capacitance of the above-described wiring can be reduced, and thus the noise figures of low noise amplifiers 7E and 7F can be improved.

[0482] In addition, the distances between input / output terminal 164 and input terminal 174, input / output terminal 165 and input terminal 175, and input / output terminal 166 and input terminal 176 are smaller than the distances between input / output terminal 561 and input terminal 571, input / output terminal 562 and input terminal 572, and input / output terminal 563 and input terminal 573. Thereby, the wiring connecting surface acoustic wave filters 5A, 5B, and 5C and low noise amplifiers 7D, 7E, and 7F can be shortened. Accordingly, the transmission loss and stray capacitance of the above-described wiring can be reduced, and thus the noise figures of low noise amplifiers 7D, 7E, and 7F can be improved.

[0483] In addition, the main surface 190b has a rectangular shape, and the input terminals 174, 175, and 176 are arranged close to the first outer edge of the main surface 190b, and the input terminals 571, 572, and 573 are arranged close to the second outer edge of the main surface 190b. Thus, by facing the filter integration component 193 to the first outer edge and arranging the filter integration component 195 close to the integrated circuit 190, the wiring connecting the surface acoustic wave filters 5A, 5B, and 5C and the low-noise amplifiers 7D, 7E, and 7F can be shortened. Furthermore, by arranging the inductors 41A, 41B, and 41C between the filter integration component 194 and the second outer edge, the wiring connecting the surface acoustic wave filters 504A, 504B, and 504C and the low-noise amplifiers 507A, 507B, and 507C can be shortened. Therefore, the noise figures of the low-noise amplifiers 507A, 507B, 507C, 7D, 7E, and 7F can be improved.

[0484] [Component configurations of the high-frequency modules 159 and 160 according to Modification Examples 18 and 19]

[0485] Figure 25A It is a circuit structure diagram of the high-frequency module 159 according to Modification Example 18. As shown in this figure, the high-frequency module 159 according to this modification example includes surface acoustic wave filters 504A, 504C, 505B, 4B, 5A, and 5C, low-noise amplifiers 507A, 507C, 507E, 7B, 7D, and 7F, inductors 41A, 41C, and 41D, a switch 78, and an antenna connection terminal 150.

[0486] The surface acoustic wave filters 4B, 5A, and 5C are each an example of the first surface acoustic wave filter. For example, they have the same circuit structure and the same resonance characteristics of the surface acoustic wave resonators as any one of the surface acoustic wave filter 1 according to the embodiment, the surface acoustic wave filter 1A according to Modification Example 1, and the surface acoustic wave filter 1B according to Modification Example 2. The surface acoustic wave filter 4B has input / output terminals 162 (the first input / output terminals) and input / output terminals 142 (the second input / output terminals), and for example, has a passband including at least a part of the frequency band B belonging to MB. The surface acoustic wave filter 5A has input / output terminals 144 and 164, and for example, has a passband including at least a part of the frequency band D belonging to MB. The surface acoustic wave filter 5C has input / output terminals 146 and 166, and for example, has a passband including at least a part of the frequency band F belonging to MB.

[0487] The elastic wave filters 504A, 504C, and 505B are examples of the second elastic wave filter, respectively. For example, they have the same circuit structure and the same resonance characteristics of the elastic wave resonator as those of the elastic wave filter 501 involved in the comparative example. The elastic wave filter 504A has input / output terminals 561 (the third input / output terminal) and input / output terminals 551 (the fourth input / output terminal), and for example, has a passband including at least a part of the frequency band A belonging to MB. The elastic wave filter 504C has input / output terminals 553 and 563, and for example, has a passband including at least a part of the frequency band C belonging to MB. The elastic wave filter 505B has input / output terminals 555 and 565, and for example, has a passband including at least a part of the frequency band E belonging to MB.

[0488] In addition, the frequency band A, the frequency band B, and the frequency band C may be the same frequency band. Furthermore, the frequency band D, the frequency band E, and the frequency band F may be the same frequency band.

[0489] The low-noise amplifiers 7B, 7D, and 7F are examples of the first low-noise amplifier, respectively, and have the same circuit structure and the same amplification characteristics as those of the low-noise amplifier 2 involved in the embodiment. The low-noise amplifier 7B has an input terminal 172. The input terminal 172 is an example of the first input terminal and is connected to the input / output terminal 162 without passing through an inductor. The low-noise amplifier 7D has an input terminal 174. The input terminal 174 is connected to the input / output terminal 164 without passing through an inductor. The low-noise amplifier 7F has an input terminal 176. The input terminal 176 is connected to the input / output terminal 166 without passing through an inductor.

[0490] The low-noise amplifiers 507A, 507C, and 507E are examples of the second low-noise amplifier, respectively, and have the same circuit structure and the same amplification characteristics as those of the low-noise amplifier 2 involved in the embodiment. The low-noise amplifier 507A has an input terminal 571. The input terminal 571 is an example of the second input terminal and is connected to the input / output terminal 561 via an inductor 41A. The low-noise amplifier 507C has an input terminal 573. The input terminal 573 is connected to the input / output terminal 563 via an inductor 41C. The low-noise amplifier 507E has an input terminal 575. The input terminal 575 is connected to the input / output terminal 565 via an inductor 41D.

[0491] The inductor 41A is an example of the third inductor and is disposed between the low-noise amplifier 507A having a capacitive input impedance and the elastic wave filter 504A. The inductor 41C is disposed between the low-noise amplifier 507C having a capacitive input impedance and the elastic wave filter 504C. The inductor 41D is disposed between the low-noise amplifier 507E having a capacitive input impedance and the elastic wave filter 505B.

[0492] The switch 78 is connected between the antenna connection terminal 150 and the surface acoustic wave filters 4B, 5A, 5C, 504A, 504C, and 505B, and has a common terminal and a plurality of selection terminals. The antenna connection terminal 150 is connected to the common terminal of the switch 78 and the antenna. The plurality of selection terminals of the switch 78 are connected to the surface acoustic wave filters 4B, 5A, 5C, 504A, 504C, and 505B in a one-to-one manner.

[0493] According to the above structure, the high-frequency module 159 can perform (1) the individual transmission of any one signal in frequency bands A to F, and (2) the simultaneous transmission of two or more signals among frequency bands A to F.

[0494] The surface acoustic wave filters 504A and 4B are included in the filter integration component 196. The filter integration component 196 has, for example, a structure in which the surface acoustic wave resonators of the surface acoustic wave filters 504A and 4B are arranged on a common piezoelectric substrate. The surface acoustic wave filters 504C and 5A are included in the filter integration component 197. The filter integration component 197 has, for example, a structure in which the surface acoustic wave resonators of the surface acoustic wave filters 504C and 5A are arranged on a common piezoelectric substrate. The surface acoustic wave filters 505B and 5C are included in the filter integration component 198. The filter integration component 198 has, for example, a structure in which the surface acoustic wave resonators of the surface acoustic wave filters 505B and 5C are arranged on a common piezoelectric substrate.

[0495] The low-noise amplifiers 507A, 507C, 507E, 7B, 7D, and 7F are included in the integrated circuit 190. The integrated circuit 190 is an example of the second integration component, and is formed, for example, using CMOS, and specifically, can also be manufactured by an SOI process. In addition, the integrated circuit 190 is not limited to CMOS.

[0496] Next, the component arrangement of the high-frequency module 159 according to this modification will be described. Figure 25B It is a top view of the high-frequency module 159 according to Modification 18. In Figure 25B it, the arrangement of the circuit components is shown when the main surface 90a of the mounting substrate 90 is viewed in perspective from the positive z-axis direction side.

[0497] As Figure 25B shown, in addition to the circuit components shown in Figure 25A the high-frequency module 159 further includes a mounting substrate 90. The mounting substrate 90 has a main surface 90a (first main surface) and 90b (second main surface) that face each other.

[0498] As Figure 25BAs shown, the filter integrated components 196, 197, 198, the integrated circuit 190, the inductors 41A, 41C, and 41D, the switch 78, and the antenna connection terminal 150 are arranged on the main surface 90a. More specifically, the input / output terminals 142, 162, 551, and 561 are arranged on the main surface of the filter integrated component 196. The input / output terminals 144, 164, 553, and 563 are arranged on the main surface of the filter integrated component 197. The input / output terminals 146, 166, 555, and 565 are arranged on the main surface of the filter integrated component 198.

[0499] Here, as Figure 25B shown, when looking down at the mounting substrate 90, the input / output terminals 162, 164, 166, 561, 563, and 565 are closer to the integrated circuit 190 than the input / output terminals 142, 144, 146, 551, 553, and 555. Thereby, the wiring for connecting the surface acoustic wave filters 4B, 5A, 5C, 504A, 504C, and 505B and the low-noise amplifiers 7B, 7D, 7F, 507A, 507C, and 507E can be shortened. Therefore, the transmission loss and stray capacitance of the above wiring can be reduced, and thus the noise figure of the low-noise amplifiers 7B, 7D, 7F, 507A, 507C, and 507E can be improved.

[0500] In addition, the input terminals 172, 174, and 176 are closer to the first outer side of the integrated circuit 190 than the input terminals 571, 573, and 575. The first outer side faces the filter integrated components 197 and 198. In other words, the main surface of the integrated circuit 190 includes a first outer peripheral region and a first central region located inside the first outer peripheral region. The input terminals 172, 174, and 176 are arranged in the first outer peripheral region, and the input terminals 571, 573, and 575 are arranged in the first central region. Thereby, the wiring for connecting the surface acoustic wave filters 4B, 5A, and 5C and the low-noise amplifiers 7B, 7D, and 7F that are not connected to the inductors 41A, 41C, and 41D can be shortened. Therefore, the transmission loss and stray capacitance of the above wiring can be reduced, and thus the noise figure of the low-noise amplifiers 7B, 7D, and 7F can be improved.

[0501] In addition, the input / output terminals 162, 164, and 166 not connected to the inductor and the input / output terminals 561, 563, and 565 connected to the inductor are alternately arranged. Thus, by arranging the inductor 41A close to the input / output terminal 561, and arranging the inductors 41C and 41D between the input / output terminal 162 and the input / output terminal 563, and between the input / output terminal 164 and the input / output terminal 565, respectively, the wiring connecting the surface acoustic wave filters 504A, 504C, and 505B and the low-noise amplifiers 507A, 507C, and 507E can be shortened, and magnetic field coupling between the inductors 41A, 41C, and 41D can be suppressed. Therefore, the noise figures of the low-noise amplifiers 507A, 507C, and 507E can be improved.

[0502] Figure 26 is a top view of the high-frequency module 160 according to Modification 19. As shown in this figure, the high-frequency module 160 according to this modification includes filter integration components 196, 197, and 198, an integrated circuit 190, inductors 41A, 41C, and 41D, a switch 78, an antenna connection terminal 150, and a mounting substrate 90. The high-frequency module 160 according to this modification is different only in the configuration structure of the circuit components as compared with the high-frequency module 159 according to Modification 18. Therefore, hereinafter, for the high-frequency module 160 according to this modification, the description of the same structure as that of the high-frequency module 159 according to Modification 18 will be omitted, and the description will focus on the different structure.

[0503] As Figure 26 shown, the filter integration components 196, 197, and 198, the integrated circuit 190, the inductors 41A, 41C, and 41D, the switch 78, and the antenna connection terminal 150 are arranged on the main surface 90a. Here, as Figure 26 shown, when the mounting substrate 90 is viewed from above, the input / output terminal 162 is closer to the integrated circuit 190 than the input / output terminal 142, the input / output terminal 164 is closer to the integrated circuit 190 than the input / output terminal 144, the input / output terminal 166 is closer to the integrated circuit 190 than the input / output terminal 146, the input / output terminal 561 is closer to the integrated circuit 190 than the input / output terminal 551, the input / output terminal 563 is closer to the integrated circuit 190 than the input / output terminal 553, and the input / output terminal 565 is closer to the integrated circuit 190 than the input / output terminal 555. Thus, the wiring connecting the surface acoustic wave filters 4B, 5A, 5C, 504A, 504C, and 505B and the low-noise amplifiers 7B, 7D, 7F, 507A, 507C, and 507E can be shortened. Therefore, the transmission loss and stray capacitance of the above wiring can be reduced, and thus the noise figures of the low-noise amplifiers 7B, 7D, 7F, 507A, 507C, and 507E can be improved.

[0504] In addition, the input terminals 571, 573, and 575 are closer to the first outer side of the integrated circuit 190 than the input terminals 172, 174, and 176. The first outer side faces the filter integrated components 196, 197, and 198 across the inductors 41A, 41C, and 41D. When the wiring configuration connecting the surface acoustic wave filters 504A, 504C, and 505B and the low-noise amplifiers 507A, 507C, and 507E is used for the planar electrodes connecting the inductors 41A, 41C, and 41D, the stray capacitance increases. Thus, since the wiring connecting the surface acoustic wave filters 504A, 504C, and 505B and the low-noise amplifiers 507A, 507C, and 507E that connect the inductors 41A, 41C, and 41D can be shortened, it is possible to achieve a balance between the stray capacitance of the above wiring and the stray capacitance of the wiring connecting the surface acoustic wave filters 4B, 5A, 5C and the low-noise amplifiers 7B, 7D, and 7F.

[0505] [Component configuration of the high-frequency module 271 according to Modification 20]

[0506] Figure 27A It is a circuit structure diagram of the high-frequency module according to Modification 20.

[0507] Figure 27A It is a circuit structure diagram of the high-frequency module 271 according to Modification 20. As shown in this figure, the high-frequency module 271 according to this modification includes surface acoustic wave filters 3G and 503G, low-noise amplifiers 2G and 502G, inductors 41 and 46, and an antenna connection terminal 231.

[0508] The surface acoustic wave filter 3G is an example of the first surface acoustic wave filter. For example, it has the same circuit structure and the same resonant characteristics of the surface acoustic wave resonator as any one of the surface acoustic wave filter 1 according to the embodiment, the surface acoustic wave filter 1A according to Modification 1, and the surface acoustic wave filter 1B according to Modification 2. The surface acoustic wave filter 3G has input / output terminals 291 (first input / output terminals) and input / output terminals 281 (second input / output terminals), and for example, has a passband including at least a part of the frequency band A belonging to the high-frequency band group (2300 to 2690 MHz, hereinafter referred to as HB).

[0509] The surface acoustic wave filter 503G is an example of the second surface acoustic wave filter. For example, it has the same circuit structure and the same resonant characteristics of the surface acoustic wave resonator as the surface acoustic wave filter 501 according to the comparative example. The surface acoustic wave filter 503G has input / output terminals 491 (third input / output terminals) and input / output terminals 481 (fourth input / output terminals), and for example, has a passband including at least a part of the frequency band B belonging to the MB.

[0510] The low-noise amplifier 2G is an example of the first low-noise amplifier, having the same circuit structure and the same amplification characteristics as the low-noise amplifier 2 related to the embodiment. The low-noise amplifier 2G has an input terminal 133. The input terminal 133 is an example of the first input terminal and is connected to the input / output terminal 291 without passing through an inductor.

[0511] The low-noise amplifier 502G is an example of the second low-noise amplifier, having the same circuit structure and the same amplification characteristics as the low-noise amplifier 2 related to the embodiment. The low-noise amplifier 502G has an input terminal 533. The input terminal 533 is an example of the second input terminal and is connected to the input / output terminal 491 via an inductor 41.

[0512] The inductor 41 is an example of the third inductor and is arranged between the low-noise amplifier 502G having a capacitive input impedance and the surface acoustic wave filter 503G.

[0513] The inductor 46 is connected to the antenna connection terminal 231 to achieve impedance matching between the surface acoustic wave filter 503G and an external circuit connected to the antenna connection terminal 231.

[0514] According to the above structure, the high-frequency module 271 can simultaneously transmit signals in frequency band A and signals in frequency band B.

[0515] The higher the frequency of the signal, the greater the amount of impedance shift under the influence of the stray capacitance of the wiring. According to the above structure of this modification example, since no inductor is arranged in the surface acoustic wave filter 3G and the low-noise amplifier 2G that transmit the signal of HB on the high-frequency side, the transmission loss of the signal of HB can be reduced.

[0516] The low-noise amplifiers 2G and 502G are included in the integrated circuit 190. The integrated circuit 190 is an example of the second integrated component. For example, it is formed using CMOS and can specifically also be manufactured by the SOI process. In addition, the integrated circuit 190 is not limited to CMOS.

[0517] Next, the component arrangement of the high-frequency module 271 related to this modification example will be described. Figure 27B It is a top view of the high-frequency module 271 related to Modification Example 20. In Figure 27B it shows the arrangement of circuit components when the main surface 90a of the mounting substrate 90 is viewed in perspective from the positive z-axis direction side. In addition, in Figure 27B it shows the circuit components arranged on the main surface 90a side with solid lines and the terminals arranged on the main surface 90b side with dashed lines.

[0518] As shown in Figure 27BAs shown, in addition to the circuit components shown in Figure 27A , the high-frequency module 271 further includes a mounting substrate 90. The mounting substrate 90 has main surfaces 90a (first main surface) and 90b (second main surface) that face each other.

[0519] As Figure 27B shown, the surface acoustic wave filters 3G and 503G, inductors 41 and 46, and the antenna connection terminal 231 are arranged on the main surface 90a. In addition, the integrated circuit 190 is arranged on the main surface 90b.

[0520] Here, as Figure 27B shown, when looking down at the mounting substrate 90, the input / output terminals 291 of the surface acoustic wave filter 3G overlap with the integrated circuit 190. On the other hand, the input / output terminals 491 of the surface acoustic wave filter 503G and the antenna connection terminal 231 do not overlap with the integrated circuit 190. Thus, the input / output terminals 291 that are connected to the low-noise amplifier 2G without passing through an inductor are arranged near the low-noise amplifier 2G, and the input / output terminals 491 that are connected to the low-noise amplifier 502G through the inductor 41 are connected away from the low-noise amplifier 502G. Thereby, the wiring connecting the surface acoustic wave filter 3G that is not connected to the inductor 41 and the low-noise amplifier 2G can be shortened. Therefore, the transmission loss and stray capacitance of the above wiring can be reduced, and thus the noise figure of the low-noise amplifier 2G can be improved.

[0521] Figure 28A FIG. is a circuit structure diagram of the high-frequency module 272 according to Modification 21. Compared with the high-frequency module 271 according to Modification 20, the high-frequency module 272 according to Modification 21 is different in structure in that surface acoustic wave filters and antenna connection terminals are added. Hereinafter, the high-frequency module 272 according to Modification 21 will be described centering on the differences from the high-frequency module 271 according to Modification 20.

[0522] As Figure 28A shown, the high-frequency module 272 includes surface acoustic wave filters 3H, 3J, 503H, and 503J, low-noise amplifiers 2H, 2J, 502H, and 502J, inductors 41 and 44, switches 235 and 236, and antenna connection terminals 232 and 233.

[0523] The elastic wave filters 3H and 3J are an example of the first elastic wave filter. For example, they have the same circuit structure and the same resonant characteristics of the elastic wave resonator as any one of the elastic wave filter 1 related to the embodiment, the elastic wave filter 1A related to the modified example 1, and the elastic wave filter 1B related to the modified example 2. The elastic wave filter 3H has an input / output terminal 292 (the first input / output terminal) and an input / output terminal 282 (the second input / output terminal), and for example, has a passband including at least a part of a frequency band A belonging to the medium-high frequency band group (MHB: 1710 to 2370 MHz, hereinafter referred to as MHB). The elastic wave filter 3J has input / output terminals 293 and 283, and for example, has a passband including at least a part of a frequency band C belonging to the ultra-high frequency band group (UHB: 3.3 to 5 GHz, hereinafter referred to as UHB).

[0524] The elastic wave filters 503H and 503J are an example of the second elastic wave filter. For example, they have the same circuit structure and the same resonant characteristics of the elastic wave resonator as the elastic wave filter 501 related to the comparative example. The elastic wave filter 503H has an input / output terminal 492 (the third input / output terminal) and an input / output terminal 482 (the fourth input / output terminal), and for example, has a passband including at least a part of a frequency band B belonging to MHB. The elastic wave filter 503J has input / output terminals 493 and 483, and for example, has a passband including at least a part of a frequency band D belonging to UHB.

[0525] The low-noise amplifiers 2H and 2J are an example of the first low-noise amplifier, and have the same circuit structure and the same amplification characteristics as the low-noise amplifier 2 related to the embodiment. The low-noise amplifier 2H has an input terminal 133. The input terminal 133 is an example of the first input terminal and is connected to the input / output terminal 292 without passing through an inductor. The low-noise amplifier 2J has an input terminal 134. The input terminal 134 is connected to the input / output terminal 293 without passing through an inductor.

[0526] The low-noise amplifiers 502H and 502J are an example of the second low-noise amplifier, and have the same circuit structure and the same amplification characteristics as the low-noise amplifier 2 related to the embodiment. The low-noise amplifier 502H has an input terminal 533. The input terminal 533 is an example of the second input terminal and is connected to the input / output terminal 492 via an inductor 41. The low-noise amplifier 502J has an input terminal 534. The input terminal 534 is connected to the input / output terminal 493 via an inductor 44.

[0527] The inductor 41 is an example of the third inductor and is arranged between the low-noise amplifier 502H having a capacitive input impedance and the surface acoustic wave filter 503H. The inductor 44 is arranged between the low-noise amplifier 502J having a capacitive input impedance and the surface acoustic wave filter 503J.

[0528] The switch 235 has a common terminal, a first selection terminal, and a second selection terminal, and switches the connection between the common terminal and the first selection terminal and the connection between the common terminal and the second selection terminal. The common terminal is connected to the antenna connection terminal 232, the first selection terminal is connected to the surface acoustic wave filter 3H, and the second selection terminal is connected to the surface acoustic wave filter 503H.

[0529] The switch 236 has a common terminal, a third selection terminal, and a fourth selection terminal, and switches the connection between the common terminal and the third selection terminal and the connection between the common terminal and the fourth selection terminal. The common terminal is connected to the antenna connection terminal 233, the third selection terminal is connected to the surface acoustic wave filter 3J, and the fourth selection terminal is connected to the surface acoustic wave filter 503J.

[0530] The low-noise amplifiers 2H, 2J, 502H, and 502J are included in the integrated circuit 190. The integrated circuit 190 is an example of the second integrated component and is formed using, for example, CMOS, and specifically, it can also be manufactured by the SOI process. In addition, the integrated circuit 190 is not limited to CMOS.

[0531] Next, the component arrangement of the high-frequency module 272 according to this modification example will be described. Figure 28B is a top view of the high-frequency module 272 according to Modification Example 21. In Figure 28B it shows the arrangement of circuit components when the main surface 90a of the mounting substrate 90 is seen in perspective from the positive z-axis direction side. In addition, in Figure 28B the circuit components arranged on the main surface 90a side are shown by solid lines, and the terminals arranged on the main surface 90b side are shown by dashed lines.

[0532] As Figure 28B shown, the high-frequency module 272 includes, in addition to the Figure 28A shown circuit components, a mounting substrate 90. The mounting substrate 90 has a main surface 90a (first main surface) and 90b (second main surface) that face each other.

[0533] As Figure 28B shown, the surface acoustic wave filters 3H, 3J, 503H, and 503J, the inductors 41 and 44, and the antenna connection terminals 232 and 233 are arranged on the main surface 90a. In addition, the integrated circuit 190, the switches 235 and 236 are arranged on the main surface 90b. In addition, the switches 235 and 236 may also be included in the integrated circuit 190.

[0534] Here, as Figure 28B shown, when looking down at the mounting substrate 90, the input / output terminals 292 of the SAW filter 3H overlap with the integrated circuit 190, and the input / output terminals 293 of the SAW filter 3J overlap with the integrated circuit 190. On the other hand, the input / output terminals 492 of the SAW filter 503H and the input / output terminals 493 of the SAW filter 503J do not overlap with the integrated circuit 190. Thereby, it is possible to shorten the wirings that connect the SAW filter 3H not connected to the inductor 41 and the low-noise amplifier 2H, and the wirings that connect the SAW filter 3J not connected to the inductor 44 and the low-noise amplifier 2J. Therefore, it is possible to reduce the transmission loss and the stray capacitance of the above-mentioned wirings, and thus it is possible to improve the noise figures of the low-noise amplifiers 2H and 2J.

[0535] Figure 29A is a circuit configuration diagram of the high-frequency module 273 according to Modification 22. Compared with the high-frequency module 271 according to Modification 20, as a structure, the differences are that a SAW filter and antenna connection terminals are added, and the integrated circuit is divided. Hereinafter, regarding the high-frequency module 273 according to Modification 22, the differences from the high-frequency module 271 according to Modification 20 will be mainly described.

[0536] As Figure 29A shown, the high-frequency module 273 includes SAW filters 3H, 3J, 3K, 3L, 3M and 503J, low-noise amplifiers 2H, 2J, 2K, 2L, 2M and 502J, an inductor 44, switches 236 and 237, and antenna connection terminals 232 and 233.

[0537] The SAW filters 3H, 3J, 3K, 3L, and 3M are an example of the first SAW filter. For example, they have the same circuit structure and the same resonance characteristics of the SAW resonators as any one of the SAW filter 1 according to the embodiment, the SAW filter 1A according to Modification 1, and the SAW filter 1B according to Modification 2. The SAW filter 3K has input / output terminals 294 and 284, and for example, has a passband including at least a part of the frequency band K belonging to MHB. The SAW filter 3L has input / output terminals 295 and 285, and for example, has a passband including at least a part of the frequency band L belonging to MHB. The SAW filter 3M has input / output terminals 296 and 286, and for example, has a passband including at least a part of the frequency band M belonging to MHB.

[0538] The low-noise amplifiers 2H, 2J, 2K, 2L, 2M and 502J are an example of the first low-noise amplifier, having the same circuit structure and the same amplification characteristics as the low-noise amplifier 2 according to the embodiment. The low-noise amplifier 2K has an input terminal 135. The input terminal 135 is connected to the input / output terminal 294 without passing through an inductor. The low-noise amplifier 2L has an input terminal 136. The input terminal 136 is connected to the input / output terminal 295 without passing through an inductor. The low-noise amplifier 2M has an input terminal 137. The input terminal 137 is connected to the input / output terminal 296 without passing through an inductor.

[0539] The switch 237 has a common terminal, a first selection terminal, a second selection terminal, a third selection terminal and a fourth selection terminal, and switches the connections between the common terminal and the first selection terminal, between the common terminal and the second selection terminal, between the common terminal and the third selection terminal, and between the common terminal and the fourth selection terminal. The common terminal is connected to the antenna connection terminal 232, the first selection terminal is connected to the surface acoustic wave filter 3H, the second selection terminal is connected to the surface acoustic wave filter 3K, the third selection terminal is connected to the surface acoustic wave filter 3L, and the fourth selection terminal is connected to the surface acoustic wave filter 3M.

[0540] The surface acoustic wave filters 3H and 3K are included in the filter integrated component 297. The filter integrated component 297 has, for example, a structure in which the surface acoustic wave resonators of the surface acoustic wave filters 3H and 3K are arranged on a common piezoelectric substrate. The surface acoustic wave filters 3L and 3M are included in the filter integrated component 298. The filter integrated component 298 has, for example, a structure in which the surface acoustic wave resonators of the surface acoustic wave filters 3L and 3M are arranged on a common piezoelectric substrate.

[0541] The low-noise amplifiers 2H, 2K, 2L and 2M are included in the integrated circuit 190A. The low-noise amplifiers 2J and 502J are included in the integrated circuit 190B.

[0542] Next, the component arrangement of the high-frequency module 273 according to this modification will be described. Figure 29B is a top view of the high-frequency module 273 according to Modification 22. In Figure 29B it shows the arrangement of circuit components when the main surface 90a of the mounting substrate 90 is viewed in perspective from the positive z-axis side. In addition, in Figure 29B it shows the circuit components arranged on the main surface 90a side with solid lines and the terminals arranged on the main surface 90b side with dashed lines.

[0543] As Figure 29B shown, the high-frequency module 273 further includes Figure 29AIn addition to the circuit components shown, a mounting substrate 90 is provided. The mounting substrate 90 has main surfaces 90a (first main surface) and 90b (second main surface) that face each other.

[0544] As Figure 29B shown, filter integrated components 297 and 298, surface acoustic wave filters 3J and 503J, inductor 44, and antenna connection terminals 232 and 233 are arranged on the main surface 90a. In addition, integrated circuits 190A and 190B, and switches 236 and 237 are arranged on the main surface 90b. Alternatively, switch 236 may be included in integrated circuit 190B, and switch 237 may be included in integrated circuit 190A.

[0545] Here, as Figure 29B shown, when the mounting substrate 90 is viewed from above, input / output terminals 292, 294, 295, and 296 overlap with integrated circuit 190A, and input / output terminal 293 overlaps with integrated circuit 190B. On the other hand, input / output terminal 493 does not overlap with integrated circuits 190A and 190B. As a result, the wiring connecting the surface acoustic wave filter not connected to inductor 44 and the low-noise amplifier can be shortened. Therefore, the transmission loss and stray capacitance of the above wiring can be reduced, and thus the noise figure of low-noise amplifiers 2H, 2J, 2K, 2L, and 2M can be improved.

[0546] In addition, since integrated circuits 190A and 190B are arranged to face each other, when switches are arranged between low-noise amplifiers 2H to 2M and 502J and the output terminals of high-frequency module 273, the wiring connecting these switches and low-noise amplifiers 2H to 2M and 502J can be shortened. Therefore, the signal output from high-frequency module 273 can be made to have low loss.

[0547] [22 Effects, etc.]

[0548] As described above, the surface acoustic wave filter 1 according to this embodiment includes a series arm resonator 14 (first series arm resonator) disposed in a series arm path connecting input / output terminals 110 and 120, and a shunt arm resonator 23 (first shunt arm resonator) connected between the series arm path and ground. The series arm resonator 14 and the shunt arm resonator 23 each include a surface acoustic wave resonator. The resonance frequency frs14 (first resonance frequency) of the series arm resonator 14 and the resonance frequency frp23 (second resonance frequency) of the shunt arm resonator 23 are below the low-frequency end of the passband of the surface acoustic wave filter 1. The anti-resonance frequency fas14 (first anti-resonance frequency) of the series arm resonator 14 and the anti-resonance frequency fap23 (second anti-resonance frequency) of the shunt arm resonator 23 are above the high-frequency end of the passband. The resonance frequency frs14 is higher than the resonance frequency frp23, and the anti-resonance frequency fas14 is higher than the anti-resonance frequency fap23.

[0549] Accordingly, the impedance of the series arm resonator 14 and the shunt arm resonator 23 in the passband becomes inductive, so that the impedance of the surface acoustic wave filter 1 in the passband can be made inductive. Therefore, when connected to an external circuit having a capacitive impedance, the impedance of the combination of the surface acoustic wave filter 1 and the external circuit can be made close to the reference impedance without adding an inductor for impedance matching. Therefore, the matching loss of the surface acoustic wave filter 1 and the high-frequency module 100 can be reduced. Further, in the inductive impedance band of the series arm resonator 14, the low-impedance band overlaps with the passband, and in the inductive impedance band of the shunt arm resonator 23, the high-impedance band overlaps with the passband. Thereby, the insertion loss of the surface acoustic wave filter 1 can be reduced. Therefore, a surface acoustic wave filter 1 ensuring low loss can be provided from the viewpoints of both matching loss and insertion loss.

[0550] In addition, for example, the surface acoustic wave filter 1 includes a plurality of series arm resonators and a plurality of shunt arm resonators. The series arm resonator 14 is connected closest to the input / output terminal 120 among the plurality of series arm resonators, and the shunt arm resonator 23 is connected closest to the input / output terminal 120 among the plurality of shunt arm resonators.

[0551] Accordingly, when the external circuit connected to the input / output terminal 120 has a capacitive impedance, since the surface acoustic wave resonator showing an inductive impedance in the passband is disposed closest to the external circuit, the impedance matching of the surface acoustic wave filter 1 and the external circuit can be made to coincide with high efficiency and high precision.

[0552] In addition, for example, in the elastic wave filter 1, among the plurality of elastic wave resonators, the number of elastic wave resonators whose resonance frequency is below the low-frequency end of the above-mentioned passband and whose anti-resonance frequency is above the high-frequency end of the above-mentioned passband is larger than the number of elastic wave resonators whose resonance frequency is higher than the low-frequency end of the above-mentioned passband or whose anti-resonance frequency is lower than the high-frequency end of the above-mentioned passband.

[0553] As a result, the number of elastic wave resonators with an inductive impedance in the above-mentioned passband becomes larger than the number of elastic wave resonators with a capacitive impedance in the passband. Therefore, the impedance of the entire passband of the elastic wave filter 1 becomes inductive. Therefore, impedance matching between an external circuit having a capacitive impedance and the elastic wave filter 1 can be achieved with higher precision. Therefore, an elastic wave filter 1 with even lower matching loss can be provided.

[0554] In addition, for example, the elastic wave filter 1 further includes at least one of a capacitor 15 connected in series to the series arm path and a capacitor 24 connected in series to the parallel arm path connecting the series arm path and the ground.

[0555] As a result, it becomes easier to design an elastic wave filter with a narrow passband using an elastic wave resonator having a wide resonance bandwidth.

[0556] In addition, for example, in the elastic wave filter 1B according to the second modification, the parallel arm resonator 20 includes a parallel arm resonator 25 and an inductor 45 connected in series.

[0557] As a result, a parallel arm resonator 20 with a wide resonance bandwidth can be formed without preparing an elastic wave resonator having a resonance bandwidth wider than the above-mentioned passband.

[0558] In addition, for example, in the elastic wave filter 1B, the frequency difference Δfa between the anti-resonance frequency fap20 and the high-frequency end of the above-mentioned passband is smaller than the frequency difference Δfr between the low-frequency end of the above-mentioned passband and the resonance frequency frp20.

[0559] As a result, in the inductive impedance band of the parallel arm resonator 20, the high-impedance band overlaps with the passband. Therefore, the insertion loss of the elastic wave filter 1B can be reduced.

[0560] In addition, for example, in the elastic wave filter 1B, the first series arm resonator includes a second elastic wave resonator and a second inductor connected in parallel.

[0561] As a result, a first series arm resonator with a wide resonance bandwidth can be formed without preparing an elastic wave resonator having a resonance bandwidth wider than the above-mentioned passband.

[0562] In addition, for example, in the elastic wave filter 1B, the frequency difference between the first resonance frequency and the low-frequency end of the above-mentioned passband is smaller than the frequency difference between the high-frequency end of the above-mentioned passband and the first anti-resonance frequency.

[0563] Thereby, in the inductive impedance frequency band of the first series arm resonator, the low impedance frequency band overlaps with the passband. Therefore, the insertion loss of the elastic wave filter 1B can be reduced.

[0564] In addition, for example, in the elastic wave filter 1B, all the elastic wave resonators included in the elastic wave filter 1B are formed on the same piezoelectric substrate.

[0565] Thereby, the resonance frequency band width of all the elastic wave resonators forming the passband of the elastic wave filter 1B can be set to the same level as the above-mentioned passband width. In contrast, by serially connecting the inductor 45 to the parallel arm resonator 25, the parallel arm resonator 20 having a resonance frequency band wider than the above-mentioned passband can be set. Therefore, it is not necessary to prepare an elastic wave resonator having a wide resonance frequency band width, and all the elastic wave resonators can be integrated on one piezoelectric substrate, so that the elastic wave filter 1B can be miniaturized.

[0566] In addition, the high-frequency module 100 according to the present embodiment includes a mounting substrate 90 having main surfaces 90a and 90b facing each other, an elastic wave filter 1 (or 1A, 1B), and a low-noise amplifier 2. The low-noise amplifier 2 has an input terminal 240, and the input terminal 240 is connected to the input / output terminal 120 of the elastic wave filter 1 without passing through an inductor. The elastic wave filter 1 is disposed on the main surface 90a, and the low-noise amplifier 2 is disposed on the main surface 90b. When the mounting substrate 90 is viewed from above, at least a part of the elastic wave filter 1 and the low-noise amplifier 2 overlap.

[0567] Thereby, the wiring connecting the elastic wave filter 1 and the low-noise amplifier 2 can be shortened, so that the high-frequency module 100 can be made low-loss and miniaturized.

[0568] In addition, in the high-frequency module 100, when the mounting substrate 90 is viewed from above, at least a part of the input / output terminal 120 and the input terminal 240 overlap.

[0569] Thereby, the elastic wave filter 1 and the low-noise amplifier 2 can be connected only by the via conductor 300, so that the high-frequency module 100 can be made even lower-loss.

[0570] In addition, for example, the high-frequency module 200 according to Modification 3 includes a surface acoustic wave filter 6A having input / output terminals 251 and 261, a surface acoustic wave filter 6C having input / output terminals 253 and 263, a low-noise amplifier 2A having an input terminal 131, and a low-noise amplifier 2C having an input terminal 133. The surface acoustic wave filters 6A and 6C have the same structure as the surface acoustic wave filter 1 (or 1A, 1B). The input terminal 131 is connected to the input / output terminal 261 without passing through an inductor, and the input terminal 132 is connected to the input / output terminal 262 without passing through an inductor. The surface acoustic wave filter 6A is included in the filter integration component 211, and the surface acoustic wave filter 6C is included in the filter integration component 212. The filter integration components 211 and 212 are arranged on the main surface 90a, and the low-noise amplifiers 2A and 2C are arranged on the main surface 90b. The main surface 90a includes a first outer peripheral region and a first central region located inside the first outer peripheral region. The main surface 90b includes a second outer peripheral region and a second central region located inside the second outer peripheral region. The input / output terminals 261 and 263 are arranged in the first central region, and the low-noise amplifiers 2A and 2C are arranged in the second central region. When the mounting substrate 90 is viewed from above, the input / output terminal 261 overlaps with the low-noise amplifier 2A, and the input / output terminal 263 overlaps with the low-noise amplifier 2C. The input / output terminal 251 is arranged on the outer peripheral side of the input / output terminal 261, and the input / output terminal 253 is arranged on the outer peripheral side of the input / output terminal 263.

[0571] Accordingly, since the input / output terminals 261 and 263 are arranged to overlap with the low-noise amplifiers 2A and 2C in the above top view, the wiring connecting the input / output terminals 261 and 263 and the low-noise amplifiers 2A and 2C can be shortened. Thereby, the transmission loss and stray capacitance of the above wiring can be reduced, and thus the noise figure of the low-noise amplifiers 2A and 2C can be improved.

[0572] In addition, for example, the high-frequency module 202 (203, 204) according to Modification Example 4 (or Modification Examples 5 and 6) includes a surface acoustic wave filter 6A having input / output terminals 251 and 261, a surface acoustic wave filter 6C having input / output terminals 253 and 263, a low-noise amplifier 2A having an input terminal 131, and a low-noise amplifier 2C having an input terminal 133. The surface acoustic wave filters 6A and 6C have the same structure as the surface acoustic wave filter 1 (or 1A, 1B). The input terminal 131 is connected to the input / output terminal 261 without passing through an inductor, and the input terminal 132 is connected to the input / output terminal 262 without passing through an inductor. The surface acoustic wave filter 6A is included in the filter integrated component 211, the surface acoustic wave filter 6C is included in the filter integrated component 212, and the low-noise amplifiers 2A and 2C are included in the integrated circuit 210A (210B). The filter integrated component 211 and the integrated circuit 210A (210B) are arranged on the main surface 90a in the order of the mounting substrate 90, the integrated circuit 210A (210B), and the filter integrated component 211. The filter integrated component 213 and the integrated circuit 210A (210B) are arranged on the main surface 90a in the order of the mounting substrate 90, the integrated circuit 210A (210B), and the filter integrated component 213. The main surface 90a includes a first outer peripheral region and a first central region located inside the first outer peripheral region. The input / output terminals 261 and 263, and the low-noise amplifiers 2A and 2C are arranged in the first central region. When the mounting substrate 90 is viewed from above, the input / output terminal 261 overlaps with the low-noise amplifier 2A, and the input / output terminal 263 overlaps with the low-noise amplifier 2C. The input / output terminal 251 is arranged on the outer peripheral side of the input / output terminal 261, and the input / output terminal 253 is arranged on the outer peripheral side of the input / output terminal 263.

[0573] Accordingly, since the input / output terminals 261 and 263 are arranged to overlap with the low-noise amplifiers 2A and 2C in the above top view, the wiring connecting the input / output terminals 261 and 263 and the low-noise amplifiers 2A and 2C can be shortened. As a result, the transmission loss and the stray capacitance of the above wiring can be reduced, and thus the noise figure of the low-noise amplifiers 2A and 2C can be improved.

[0574] In addition, for example, in the high-frequency module 203 according to Modification Example 5, the filter integrated component 211 has main surfaces 211a and 211b facing each other, the filter integrated component 213 has main surfaces 213a and 213b facing each other, and the integrated circuit 210B has main surfaces 210a and 210b facing each other. The main surface 210a faces the main surface 90a, the main surfaces 211a and 213a face the main surface 210b. The input / output terminal 261 is disposed on the main surface 211a, the input / output terminal 263 is disposed on the main surface 213a, and the input terminals 131 and 133 are disposed on the main surface 210b.

[0575] Accordingly, since via conductors for connecting the input / output terminals 261 and 263 and the input terminals 131 and 133 do not need to be formed in the integrated circuit 210B, the integrated circuit 210B can be miniaturized.

[0576] In addition, for example, the high-frequency module 200 (202, 203, 204) according to Modification Example 3 (or Modification Examples 4, 5, 6) further includes an antenna connection terminal 150, and a switch 221 that switches the connection between the antenna connection terminal 150 and the input / output terminal 251 and the connection between the antenna connection terminal 150 and the input / output terminal 253. When the mounting substrate 90 is viewed from above, the switch 221 is disposed on the outer peripheral side with respect to the input / output terminals 251 and 253.

[0577] Accordingly, since the input / output terminals 251 and 253 are disposed on the outer peripheral side with respect to the input / output terminals 261 and 263 in the above top view, and the switch 221 is disposed in the second outer peripheral region, the wiring for connecting the input / output terminals 251 and 253 and the switch 221 can be shortened. As a result, the transmission loss and stray capacitance of the above wiring can be reduced, and thus impedance matching between the antenna and the surface acoustic wave filters 6A and 6C can be achieved with high precision.

[0578] In addition, for example, the high-frequency module 151 according to Modification Example 7 (or Modification Examples 8 and 9) includes a surface acoustic wave filter 3A having input / output terminals 113 and 123, a surface acoustic wave filter 503A having input / output terminals 513 and 523, a low-noise amplifier 2A having an input terminal 133, a low-noise amplifier 502A having an input terminal 533, and an inductor 41. The surface acoustic wave filter 3A has the same structure as the surface acoustic wave filter 1 (or 1A, 1B). The input terminal 133 is connected to the input / output terminal 123 without passing through the inductor, and the input terminal 533 is connected to the input / output terminal 523 via the inductor 41. The surface acoustic wave filters 3A and 503A are included in a filter integrated component 181, and the low-noise amplifiers 2A and 502A are included in an integrated circuit 182. The filter integrated component 181 has main surfaces 181a and 181b and is arranged on a mounting substrate 90 such that the main surface 181b faces the main surface 90a. The integrated circuit 182 is arranged on the main surface 90b, and at least a part of the filter integrated component 181 and the integrated circuit 182 overlap when the mounting substrate 90 is viewed from above.

[0579] Accordingly, the surface acoustic wave filters 3A and 503A and the low-noise amplifiers 2A and 502A are separately arranged on the main surfaces 90a and 90b of the mounting substrate 90, and the filter integrated component 181 and the integrated circuit 182 are arranged to overlap. Therefore, the high-frequency module 151 can be miniaturized.

[0580] In addition, for example, in the high-frequency module 151 (152) according to Modification Example 7 (or Modification Examples 8, 9, and 10), the main surface 181b includes an outer peripheral region Rp1 and a central region Rc1 located inside the outer peripheral region Rp1. The input / output terminal 123 is arranged in the central region Rc1, and the input / output terminal 523 is arranged in the outer peripheral region Rp1.

[0581] Accordingly, since the filter integrated component 181 and the integrated circuit 182 overlap in the above top view, and the input / output terminal 123 is arranged in the central region Rc1, the wiring connecting the surface acoustic wave filter 3A and the low-noise amplifier 2A can be shortened. Therefore, the transmission loss and stray capacitance of the above wiring can be reduced, and thus the noise figure of the low-noise amplifier 2A can be improved.

[0582] In addition, for example, in the high-frequency module according to Modification Example 11, the filter integrated component 181C includes a filter chip 383 including the surface acoustic wave filter 3A and having a main surface 383b, and a filter chip 783 including the surface acoustic wave filter 503A and having a main surface 783b, and the filter chip 383 and the filter chip 783 are stacked.

[0583] Thus, since the elastic wave filters 3A and 503A are accommodated in the filter integrated component 181C having a stacked structure, the high-frequency module according to this modification example can be miniaturized.

[0584] In addition, for example, in the high-frequency module 151 according to Modification Example 7, the integrated circuit 182 has main surfaces 182a and 182b, and is arranged on the mounting substrate 90 such that the main surface 182a faces the main surface 90b. The main surface 182a includes an outer peripheral region Rp2 and a central region Rc2 located inside the outer peripheral region Rp2. The input terminal 133 is arranged in the central region Rc2, and the input terminal 533 is arranged in the outer peripheral region Rp2.

[0585] Thus, since the filter integrated component 181 and the integrated circuit 182 overlap in the above top view, and the input terminal 133 is arranged in the central region Rc2, the wiring connecting the elastic wave filter 3A and the low-noise amplifier 2A can be shortened.

[0586] In addition, for example, in the high-frequency module 153 according to Modification Example 12, an elastic wave filter 3B having a common terminal 114 and input / output terminals 123, an elastic wave filter 503B having a common terminal 114 and input / output terminals 523, a low-noise amplifier 2B having an input terminal 133, a low-noise amplifier 502B having an input terminal 533, and an inductor 41 are provided. The elastic wave filter 3B has the same structure as the elastic wave filter 1 (or 1A, 1B). The input terminal 133 is connected to the input / output terminal 123 without passing through the inductor, and the input terminal 533 is connected to the input / output terminal 523 via the inductor 41. The elastic wave filters 3B and 503B are multiplexers in which the input / output terminals are commoned to the common terminal 114.

[0587] Thus, the high-frequency module 153 can simultaneously transmit signals in frequency band A and signals in frequency band B.

[0588] In addition, for example, in the high-frequency module 153 according to Modification Example 12, the input / output terminals 123, 523, and the common terminal 114 are arranged on the main surface 185b, and the distance D3 between the input / output terminal 123 and the common terminal 114 is smaller than the distance D503 between the input / output terminal 523 and the common terminal 114.

[0589] Thus, the distance between the input / output terminal 523 connected to the inductor 41 and the common terminal 114 can be ensured, so that the interference between the signal input to the elastic wave filters 3B and 503B and the signal output from the elastic wave filter 503B can be suppressed. Therefore, the deterioration of the isolation degree between the input and output of the multiplexer constituted by the elastic wave filters 3B and 503B can be suppressed.

[0590] In addition, for example, in the high-frequency module 154 according to Modification Example 13, the surface acoustic wave filter 3C has a passband including at least a part of frequency band A, and the surface acoustic wave filter 503C has a passband including at least a part of frequency band B located on the higher-frequency side than frequency band A.

[0591] From the viewpoint of impedance matching between the low-noise amplifier and the surface acoustic wave filter, the lower the corresponding frequency of the transmission path, the more necessary it is to increase the inductance value of the inductor disposed on the transmission path, and the larger the resistance component of the inductor. From this viewpoint, in the high-frequency module 154 according to this modification example, among the two transmission paths for simultaneous transmission, an inductor is not disposed on the transmission path with a low corresponding frequency (frequency band A), and an inductor 41 is disposed on the transmission path with a high corresponding frequency (frequency band B). Thereby, the transmission loss of the wiring connecting the surface acoustic wave filter and the low-noise amplifier can be reduced, and thus the noise figure of the low-noise amplifier 2C can be improved.

[0592] In addition, for example, the high-frequency module 271 according to Modification Example 20 includes a surface acoustic wave filter 3G having input / output terminals 281 and 291, a surface acoustic wave filter 503G having input / output terminals 481 and 491, a low-noise amplifier 2G having an input terminal 133, a low-noise amplifier 502G having an input terminal 533, and an inductor 41. The surface acoustic wave filter 3G has the same structure as the surface acoustic wave filter 1 (or 1A, 1B). The input terminal 133 is connected to the input / output terminal 291 without passing through an inductor, and the input terminal 533 is connected to the input / output terminal 491 via the inductor 41. The surface acoustic wave filters 3G and 503G are disposed on the main surface 90a, and the low-noise amplifiers 2G and 502G are disposed on the main surface 90b. When the mounting substrate 90 is viewed from above, the input / output terminal 291 overlaps with the low-noise amplifier 2G, and the input / output terminal 491 does not overlap with the low-noise amplifiers 2G and 502G.

[0593] Thereby, the input / output terminal 291 connected to the low-noise amplifier 2G without passing through an inductor is disposed near the low-noise amplifier 2G, and the input / output terminal 491 connected to the low-noise amplifier 502G via the inductor 41 is connected while being away from the low-noise amplifier 502G. Thereby, the wiring connecting the surface acoustic wave filter 3G not connected to the inductor 41 and the low-noise amplifier 2G can be shortened. Therefore, the transmission loss and stray capacitance of the above-mentioned wiring can be reduced, and thus the noise figure of the low-noise amplifier 2G can be improved.

[0594] In addition, for example, the high-frequency module 158 according to Modification 17 includes a mounting substrate 90 having main surfaces 90a and 90b facing each other, a SAW filter 5A having input / output terminals 144 and 164, a SAW filter 504A having input / output terminals 551 and 561, a low-noise amplifier 7D having an input terminal 174, a low-noise amplifier 507A having an input terminal 571, and an inductor 41A. The SAW filter 5A has the same structure as the SAW filter 1 (or 1A, 1B). The input terminal 174 is connected to the input / output terminal 164 without passing through the inductor, and the input terminal 571 is connected to the input / output terminal 561 via the inductor 41A. The SAW filters 5A and 504A, and the low-noise amplifiers 7D and 507A are arranged on the main surface 90a, and the distance between the input / output terminal 164 and the input terminal 174 is smaller than the distance between the input / output terminal 561 and the input terminal 571.

[0595] Thereby, the wiring for connecting the SAW filter 5A and the low-noise amplifier 7D can be shortened. Therefore, the transmission loss and stray capacitance of the above wiring can be reduced, and thus the noise figure of the low-noise amplifier 7D can be improved.

[0596] In addition, for example, in the high-frequency module 159 according to Modification 18, the low-noise amplifiers 7D and 507A are included in an integrated circuit 190. The integrated circuit 190 has main surfaces 190a and 190b, and is arranged on the mounting substrate 90 such that the main surface 190b faces the main surface 90a. The main surface 190b includes a first outer peripheral region and a first central region located inside the first outer peripheral region. The input terminal 174 is arranged in the first outer peripheral region, and the input terminal 571 is arranged in the first central region.

[0597] Thereby, the wiring for connecting the SAW filter 5A not connected to the inductor 41A and the low-noise amplifier 7D can be shortened. Therefore, the transmission loss and stray capacitance of the above wiring can be reduced, and thus the noise figure of the low-noise amplifier 7D can be improved.

[0598] (Other embodiments)

[0599] As described above, embodiments and modifications of the SAW filter and the high-frequency module according to the present invention have been described by way of examples, but the present invention is not limited to the above embodiments and modifications. Modifications obtained by making various modifications that occur to those skilled in the art to the above embodiments and modifications within the scope not departing from the gist of the present invention, and various devices incorporating the SAW filter and the high-frequency module according to the present invention are also included in the present invention.

[0600] In addition, for example, in the surface acoustic wave filter and the high-frequency module according to the above-described embodiments and modified examples, matching elements such as inductors and capacitors, and a switching circuit may be connected between the respective components.

[0601] Hereinafter, features of the surface acoustic wave filter and the high-frequency module described based on the above-described embodiments and modified examples will be described.

[0602] <1>

[0603] A surface acoustic wave filter is a band-pass surface acoustic wave filter, wherein

[0604] comprises:

[0605] a first series-arm resonator disposed in a series-arm path connecting a first input / output terminal and a second input / output terminal; and

[0606] a first shunt-arm resonator connected between the series-arm path and ground,

[0607] the first series-arm resonator and the first shunt-arm resonator each include a surface acoustic wave resonator,

[0608] a first resonance frequency that is a resonance frequency of the first series-arm resonator and a second resonance frequency that is a resonance frequency of the first shunt-arm resonator are below a low-frequency end of a passband of the surface acoustic wave filter,

[0609] a first anti-resonance frequency that is an anti-resonance frequency of the first series-arm resonator and a second anti-resonance frequency that is an anti-resonance frequency of the first shunt-arm resonator are above a high-frequency end of the passband,

[0610] the first resonance frequency is higher than the second resonance frequency, and the first anti-resonance frequency is higher than the second anti-resonance frequency.

[0611] <2>

[0612] According to the surface acoustic wave filter described in <1>, wherein

[0613] comprises:

[0614] a plurality of series-arm resonators including the first series-arm resonator; and

[0615] a plurality of shunt-arm resonators including the first shunt-arm resonator,

[0616] the first series-arm resonator is connected closest to the first input / output terminal among the plurality of series-arm resonators,

[0617] The first parallel-arm resonator is connected closest to the first input / output terminal among the plurality of parallel-arm resonators.

[0618] <3>

[0619] The surface elastic wave filter according to <1>, wherein

[0620] a plurality of surface elastic wave resonators including the first series-arm resonator and the first parallel-arm resonator are provided,

[0621] among the plurality of surface elastic wave resonators, the number of surface elastic wave resonators whose resonance frequency is below the lower end of the passband and whose anti-resonance frequency is above the upper end of the passband is larger than the number of surface elastic wave resonators whose resonance frequency is higher than the lower end of the passband or whose anti-resonance frequency is lower than the upper end of the passband.

[0622] <4>

[0623] The surface elastic wave filter according to any one of <1> to <3>, wherein

[0624] at least one of a first capacitor serially disposed in the series-arm path and a second capacitor serially disposed in a parallel-arm path connecting the series-arm path to ground is further provided.

[0625] <5>

[0626] The surface elastic wave filter according to any one of <1> to <4>, wherein

[0627] the first parallel-arm resonator includes a first surface elastic wave resonator and a first inductor connected in series.

[0628] <6>

[0629] The surface elastic wave filter according to <5>, wherein

[0630] the difference between the second anti-resonance frequency and the frequency of the upper end of the passband is smaller than the difference between the lower end of the passband and the second resonance frequency.

[0631] <7>

[0632] The surface elastic wave filter according to any one of <1> to <4>, wherein

[0633] the first series-arm resonator includes a second surface elastic wave resonator and a second inductor connected in parallel.

[0634] <8>

[0635] The surface elastic wave filter according to <7>, wherein

[0636] The frequency difference between the first resonance frequency and the low-frequency end of the passband is smaller than the frequency difference between the high-frequency end of the passband and the first anti-resonance frequency.

[0637] <9>

[0638] The elastic wave filter according to any one of <1> to <8>, wherein

[0639] A plurality of elastic wave resonators including the first series arm resonator and the first parallel arm resonator are provided,

[0640] Each of the plurality of elastic wave resonators includes an elastic wave resonator element,

[0641] All of the elastic wave resonator elements included in the elastic wave filter are formed on the same piezoelectric substrate.

[0642] <10>

[0643] A high-frequency module includes:

[0644] A mounting substrate having a first main surface and a second main surface facing each other;

[0645] The elastic wave filter according to any one of <1> to <9>; and

[0646] A low-noise amplifier having an input terminal connected to the first input / output terminal,

[0647] The elastic wave filter is disposed on the first main surface,

[0648] The low-noise amplifier is disposed on the second main surface,

[0649] When the mounting substrate is viewed from above, at least a part of the elastic wave filter and the low-noise amplifier overlap.

[0650] <11>

[0651] The high-frequency module according to <10>, wherein

[0652] When the mounting substrate is viewed from above, at least a part of the first input / output terminal and the input terminal overlap.

[0653] Industrial applicability

[0654] The present invention can be widely used in communication devices such as mobile phones as a low-loss elastic wave filter and high-frequency module that can be applied to a multi-band frequency standard.

Claims

1. An elastic wave filter is a band-pass type elastic wave filter, wherein, It includes: A first series arm resonator disposed on a series arm path connecting a first input / output terminal and a second input / output terminal; And A first parallel arm resonator connected between the series arm path and ground, The first series arm resonator and the first parallel arm resonator each include an elastic wave resonator, A first resonance frequency which is the resonance frequency of the first series arm resonator and a second resonance frequency which is the resonance frequency of the first parallel arm resonator are below the low-frequency end of the passband of the elastic wave filter, A first anti-resonance frequency which is the anti-resonance frequency of the first series arm resonator and a second anti-resonance frequency which is the anti-resonance frequency of the first parallel arm resonator are above the high-frequency end of the passband, The first resonance frequency is higher than the second resonance frequency, and the first anti-resonance frequency is higher than the second anti-resonance frequency.

2. The elastic wave filter according to claim 1, wherein, It includes: A plurality of series arm resonators including the first series arm resonator; and A plurality of parallel arm resonators including the first parallel arm resonator, The first series arm resonator is connected closest to the first input / output terminal among the plurality of series arm resonators, The first parallel arm resonator is connected closest to the first input / output terminal among the plurality of parallel arm resonators.

3. The elastic wave filter according to claim 1, wherein, It includes a plurality of elastic wave resonators including the first series arm resonator and the first parallel arm resonator, Among the plurality of elastic wave resonators, the number of elastic wave resonators whose resonance frequency is below the low-frequency end of the passband and whose anti-resonance frequency is above the high-frequency end of the passband is larger than the number of elastic wave resonators whose resonance frequency is higher than the low-frequency end of the passband or whose anti-resonance frequency is lower than the high-frequency end of the passband.

4. The elastic wave filter according to any one of claims 1 to 3, wherein, It further includes at least one of a first capacitor connected in series to the series arm path and a second capacitor connected in series to a parallel arm path connecting the series arm path and ground.

5. The elastic wave filter according to any one of claims 1 to 4, wherein, The first parallel arm resonator includes a first elastic wave resonator and a first inductor connected in series.

6. The elastic wave filter according to claim 5, wherein, The frequency difference between the second anti-resonance frequency and the high-frequency end of the passband is smaller than the frequency difference between the low-frequency end of the passband and the second resonance frequency.

7. The elastic wave filter according to any one of claims 1 to 4, wherein, The first series arm resonator includes a second elastic wave resonator and a second inductor connected in parallel.

8. The elastic wave filter according to claim 7, wherein, The frequency difference between the first resonance frequency and the low-frequency end of the passband is smaller than the frequency difference between the high-frequency end of the passband and the first anti-resonance frequency.

9. The elastic wave filter according to any one of claims 1 to 8, wherein, A plurality of surface acoustic wave resonators including the first series arm resonator and the first parallel arm resonator are provided. Each of the plurality of surface acoustic wave resonators includes a surface acoustic wave resonator element. All of the surface acoustic wave resonator elements included in the surface acoustic wave filter are formed on the same piezoelectric substrate.

10. A high-frequency module includes: A mounting substrate having a first main surface and a second main surface facing each other; A first surface acoustic wave filter; and A first low-noise amplifier, The first surface acoustic wave filter is the surface acoustic wave filter according to any one of claims 1 to 9. The first low-noise amplifier has a first input terminal. The first input terminal is connected to the first input / output terminal of the first surface acoustic wave filter without passing through an inductor. The first surface acoustic wave filter is disposed on the first main surface. The first low-noise amplifier is disposed on the second main surface. When the mounting substrate is viewed from above, at least a part of the first surface acoustic wave filter and the first low-noise amplifier overlap.

11. The high-frequency module according to claim 10, wherein When the mounting substrate is viewed from above, at least a part of the first input / output terminal and the first input terminal overlap.

12. The high-frequency module according to claim 10 or 11, wherein It further includes: A second surface acoustic wave filter having a third input / output terminal and a fourth input / output terminal; and A second low-noise amplifier having a second input terminal. The second input terminal is connected to the third input / output terminal of the second surface acoustic wave filter without passing through an inductor. The first surface acoustic wave filter is included in a first integrated component. The second surface acoustic wave filter is included in a second integrated component. The first integrated component and the second integrated component are disposed on the first main surface. The first low-noise amplifier and the second low-noise amplifier are disposed on the second main surface. The first main surface includes a first outer peripheral region and a first central region located inside the first outer peripheral region. The second main surface includes a second outer peripheral region and a second central region located inside the second outer peripheral region. The first input / output terminal and the third input / output terminal are disposed on the first central region. The first low-noise amplifier and the second low-noise amplifier are disposed on the second central region. When the mounting substrate is viewed from above, the first input / output terminal overlaps with the first low-noise amplifier, the third input / output terminal overlaps with the second low-noise amplifier, the second input / output terminal is disposed on the outer peripheral side of the first input / output terminal, and the fourth input / output terminal is disposed on the outer peripheral side of the third input / output terminal.

13. The high-frequency module according to claim 10 or 11, wherein It further includes: A second surface acoustic wave filter having a third input / output terminal and a fourth input / output terminal; and A second low-noise amplifier having a second input terminal. The second input terminal is connected to the third input / output terminal of the second surface acoustic wave filter without passing through an inductor. The first surface acoustic wave filter is included in a first integrated component. The second elastic wave filter is included in a second integrated component, The first low-noise amplifier and the second low-noise amplifier are included in a third integrated component, The first integrated component and the third integrated component are arranged on the first main surface in the order of the mounting substrate, the third integrated component, and the first integrated component, The second integrated component and the third integrated component are arranged on the first main surface in the order of the mounting substrate, the third integrated component, and the second integrated component, The first main surface includes a first outer peripheral region and a first central region located inside the first outer peripheral region, The first input / output terminal, the third input / output terminal, the first low-noise amplifier, and the second low-noise amplifier are arranged in the first central region, When looking down at the mounting substrate, the first input / output terminal overlaps with the first low-noise amplifier, the third input / output terminal overlaps with the second low-noise amplifier, the second input / output terminal is arranged on the outer peripheral side of the first input / output terminal, and the fourth input / output terminal is arranged on the outer peripheral side of the third input / output terminal.

14. The high-frequency module according to claim 13, wherein, The first integrated component has a third main surface and a fourth main surface facing each other, The second integrated component has a fifth main surface and a sixth main surface facing each other, The third integrated component has a seventh main surface and an eighth main surface facing each other, The seventh main surface faces the first main surface, The third main surface and the fifth main surface face the eighth main surface, The first input / output terminal is arranged on the third main surface, The third input / output terminal is arranged on the fifth main surface, The first input terminal and the second input terminal are arranged on the eighth main surface.

15. The high-frequency module according to any one of claims 12 to 14, wherein, It further includes: An antenna connection terminal; and A first switch that switches the connection between the antenna connection terminal and the second input / output terminal and the connection between the antenna connection terminal and the fourth input / output terminal, When looking down at the mounting substrate, the first switch is arranged on the outer peripheral side of the first input / output terminal and the third input / output terminal.

16. The high-frequency module according to claim 10 or 11, wherein, It further includes: A second elastic wave filter having a third input / output terminal and a fourth input / output terminal; A second low-noise amplifier having a second input terminal; and A third inductor, The second input terminal is connected to the third input / output terminal via the third inductor, The first elastic wave filter and the second elastic wave filter are included in the first integrated component, The first low-noise amplifier and the second low-noise amplifier are included in the second integrated component, The first integrated component has a third main surface and a fourth main surface, and is arranged on the mounting substrate such that the third main surface faces the first main surface, The second integrated component is arranged on the second main surface, When looking down at the mounting substrate, at least a part of the first integrated component and the second integrated component overlap.

17. The high-frequency module according to claim 16, wherein, the third main surface includes a first outer peripheral region and a first central region located inside the first outer peripheral region, the first input / output terminal is disposed in the first central region, the third input / output terminal is disposed in the first outer peripheral region.

18. The high-frequency module according to claim 16, wherein, the first integrated component has: a first filter chip including the first surface acoustic wave filter and having a fourth main surface; and a second filter chip including the second surface acoustic wave filter and having a third main surface, the first filter chip and the second filter chip are stacked.

19. The high-frequency module according to claim 16 or 17, wherein, the second integrated component has a fifth main surface and a sixth main surface, and is disposed on the mounting substrate such that the fifth main surface faces the second main surface, the fifth main surface includes a second outer peripheral region and a second central region located inside the second outer peripheral region, the first input terminal is disposed in the second central region, the second input terminal is disposed in the second outer peripheral region.

20. The high-frequency module according to claim 16, wherein, the first surface acoustic wave filter and the second surface acoustic wave filter are multiplexers in which the second input / output terminal and the fourth input / output terminal are commoned to a first common terminal.

21. The high-frequency module according to claim 20, wherein, the first input / output terminal, the third input / output terminal, and the first common terminal are disposed on the third main surface, the distance between the first input / output terminal and the first common terminal is smaller than the distance between the third input / output terminal and the first common terminal.

22. The high-frequency module according to claim 20 or 21, wherein, the first surface acoustic wave filter has a passband including at least a part of a first frequency band, the second surface acoustic wave filter has a passband including at least a part of a second frequency band located on the high-frequency side of the first frequency band.

23. The high-frequency module according to claim 10, wherein, further includes: a second surface acoustic wave filter having a third input / output terminal and a fourth input / output terminal; a second low-noise amplifier having a second input terminal; and a third inductor, the second input terminal is connected to the third input / output terminal via the third inductor, the first surface acoustic wave filter and the second surface acoustic wave filter are disposed on the first main surface, the first low-noise amplifier and the second low-noise amplifier are disposed on the second main surface, when looking down at the mounting substrate, the first input / output terminal overlaps with the first low-noise amplifier, the third input / output terminal does not overlap with the first low-noise amplifier and the second low-noise amplifier.

24. A high-frequency module, comprising: a mounting substrate having a first main surface and a second main surface facing each other; a first surface acoustic wave filter; The second elastic wave filter has a third input / output terminal and a fourth input / output terminal; The first low-noise amplifier has a first input terminal; The second low-noise amplifier has a second input terminal; and A third inductor, The first elastic wave filter is the elastic wave filter according to claim 1, The first input terminal is connected to the first input / output terminal of the first elastic wave filter without passing through an inductor, The second input terminal is connected to the third input / output terminal via the third inductor, The first elastic wave filter, the second elastic wave filter, the first low-noise amplifier, and the second low-noise amplifier are arranged on the first main surface, The distance between the first input / output terminal and the first input terminal is less than the distance between the third input / output terminal and the second input terminal.

25. The high-frequency module according to claim 24, wherein The first low-noise amplifier and the second low-noise amplifier are included in a second integrated component, The second integrated component has a third main surface and a fourth main surface, and is arranged on the mounting substrate such that the third main surface faces the first main surface, The third main surface includes a first outer peripheral region and a first central region located inside the first outer peripheral region, The first input terminal is arranged in the first outer peripheral region, The second input terminal is arranged in the first central region.

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