Compact intelligent power module and electronic product

Abstract

The invention provides a compact intelligent power module and an electronic product. The compact intelligent power module comprises a packaging shell, a lead frame, three driving chips and three groups of half-bridge structures, the driving chips are sequentially arranged along the first side edge; the half-bridge structures and the driving chips are arranged in a one-to-one correspondence mode, and the high-side power devices and the low-side power devices are sequentially arranged at intervals. The low-voltage pin and the high-voltage pin are respectively arranged on the first side edge and the second side edge and meet the requirement of creepage distance; the first driving chip is led out through a first floating power supply base island arranged between the high-side power device and the low-side power device of the first group of half-bridge structures; the second driving chip is led out through a second floating power supply base island arranged between the first group of half-bridge structures and the second group of half-bridge structures; and the third driving chip is led out through a third floating power supply base island arranged between the high-side power device and the low-side power device of the third group of half-bridge structures. According to the invention, the requirement of outer pin arrangement is met, the chip design and tape-out complexity is reduced, and the peripheral PCB wiring design is more flexible, simpler and more convenient.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a compact intelligent power module and an electronic product. Background Art

[0002] The compact intelligent power module (CI-IPM) is an upgraded form factor of the traditional intelligent power module. Through highly integrated design, advanced packaging technology, and intelligent control, it significantly reduces size and weight while maintaining or even improving power handling capabilities. It is suitable for space-constrained applications with high efficiency and reliability requirements. For example, the size of a compact intelligent power module is 30 mm x 15 mm or less. Due to its small package size, compact intelligent power modules have difficulty meeting creepage distance requirements between high-voltage and low-voltage pins.

[0003] To meet the requirements of pin configuration, the power device arrangement sequence often needs to be specially designed. Accordingly, the three gate driver chips need to be designed into two structures with different functions and areas to meet the requirements of internal wiring and external pin arrangement. This design increases the variety of components in the product. The differences between different chips will also reduce the consistency of product parameters, increase the complexity of tape-out and packaging, and increase the number of materials in the packaging BOM (Bill of Materials), which brings difficulties to supply and production and increases management costs.

[0004] Therefore, how to realize a compact intelligent functional module with reasonable pin arrangement and meeting creepage distance requirements and heat dissipation requirements has become one of the problems that need to be solved urgently by those skilled in the art.

[0005] It should be noted that the above technical background is merely provided to provide a clear and complete description of the technical solutions of the present invention and to facilitate understanding by those skilled in the art. Simply because these solutions are described in the technical background section of the present invention, it should not be assumed that the above technical solutions are well known to those skilled in the art. Summary of the Invention

[0006] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a compact intelligent power module and electronic product to solve the problems in the prior art that the pin arrangement of the compact intelligent function module is unreasonable and does not meet the heat dissipation requirements.

[0007] To achieve the above-mentioned and other related objectives, the present invention provides a compact intelligent power module, which comprises at least: A packaging housing, a first driving chip, a second driving chip, a third driving chip, a first half-bridge structure, a second half-bridge structure, and a third half-bridge structure disposed on a lead frame within the packaging housing, each half-bridge structure including a high-side power device and a low-side power device; Each driving chip is disposed on one side close to a first side of the packaging housing and is arranged in sequence along the first side; each half-bridge structure is disposed on one side close to a second side of the packaging housing and is arranged in one-to-one correspondence with each driving chip, and the high-side power devices and the low-side power devices in the three half-bridge structures are spaced at intervals in sequence; the low-voltage pins and the high-voltage pins of the compact intelligent power module are respectively disposed on the first side and the second side and meet the creepage distance requirement; the first side and the second side are oppositely disposed; Wherein, the positive terminal of the floating power supply of the first driving chip is led out to the corresponding pin through a first floating power supply base island, and the first floating power supply base island is disposed between the high-side power device and the low-side power device of the first half-bridge structure; the positive terminal of the floating power supply of the second driving chip is led out to the corresponding pin through a second floating power supply base island, and the second floating power supply base island is disposed between the high-side power device of the first half-bridge structure and the low-side power device of the second half-bridge structure; the positive terminal of the floating power supply of the third driving chip is led out to the corresponding pin through a third floating power supply base island, and the third floating power supply base island is disposed between the high-side power device and the low-side power device of the third half-bridge structure.

[0008] Optionally, the second floating power supply base island includes a first part and a second part coupled to each other, the first part is disposed between the high-side power device of the first half-bridge structure and the low-side power device of the second half-bridge structure, and the second part is disposed between the second driving chip and the low-side power device of the second half-bridge structure.

[0009] More optionally, the second part passes through a lead between the low-side driving signal output terminal of the second driving chip and the reference ground of the low-side power device of the second half-bridge structure, and realizes electrical connection with the positive terminal of the floating power supply of the second driving chip through the end of the second part.

[0010] Optionally, the low-voltage pins of each driving chip and the DC negative terminal pin of the first half-bridge structure are disposed on the first side of the packaging housing; the DC bus positive terminals of each half-bridge structure are connected to the same DC positive terminal pin, and the DC positive terminal pin, the positive terminal pins of the floating power supplies of each driving chip, the output pins of each half-bridge structure, and the DC negative terminal pins of the second half-bridge structure and the third half-bridge structure are disposed on the second side of the packaging housing; The DC positive terminal pins are grouped together. The output pins of each half-bridge structure and the positive terminal pins of the floating power supply of the corresponding driver chips are grouped together. The DC negative terminal pins of the second half-bridge structure and the third half-bridge structure are grouped together; the distance between each group meets the requirements of high-voltage creepage distance, and the distance between the pins within the same group meets the requirements of low-voltage creepage distance.

[0011] Optionally, the positive terminal of the power supply for the first driver chip and the second driver chip is led out to the same pin; or the positive terminal of the power supply for the second driver chip and the third driver chip is led out to the same pin.

[0012] Optionally, the lead frame further includes a common ground island, a DC positive terminal island, a DC negative terminal island and three output islands; Each driver chip is disposed on the common ground island. The grounding end of each driver chip is connected to the common ground island through a lead and led out to the corresponding pin; Each high-side power device in the three groups of half-bridge structures is disposed on the DC positive terminal island, and each low-side power device is disposed on the corresponding output island. The DC positive terminal island and each output island are led out to the corresponding pins; The DC negative terminal island is disposed between the common ground island and the DC positive terminal island. The DC negative terminal of the first group of half-bridge structures is connected to the DC negative terminal island through a lead and led out to the corresponding pin.

[0013] More optionally, the compact intelligent power module further includes a bootstrap diode disposed between the positive terminal of the power supply for each driver chip and the positive terminal of the floating power supply. Each bootstrap diode is integrated in the corresponding driver chip.

[0014] Optionally, the same chips are used for each driver chip.

[0015] More optionally, each driver chip includes a driving unit, a fault output shutdown function unit, a temperature detection unit and an overcurrent detection unit.

[0016] More optionally, the output end of the fault output shutdown function unit of each driver chip is connected to the same fault reporting / enabling shutdown pin; the output end of the temperature detection unit of one driver chip is led out to the corresponding pin; the input end of the overcurrent detection unit of one driver chip is led out to the corresponding pin, and the input ends of the overcurrent detection units of the other two driver chips are grounded.

[0017] More optionally, each driving chip includes, in clockwise order, an overcurrent detection terminal, a temperature sensing output terminal, a first positive power supply terminal, a low-side driving signal input terminal, a high-side driving signal input terminal, a ground terminal, a second positive power supply terminal, a first fault signal output / enable shutdown control terminal, a low-side driving signal output terminal, a reference ground terminal, a floating power positive terminal, a high-side driving signal output terminal, a floating ground terminal, and a second fault signal output / enable shutdown control terminal; Among them, the overcurrent detection terminal, the temperature sensing output terminal, the first positive power supply terminal, and the low-side driving signal input terminal are located at the first end of the driving chip; the high-side driving signal input terminal, the ground terminal, the second positive power supply terminal, and the first fault signal output / enable shutdown control terminal are located at the second end of the driving chip; the low-side driving signal output terminal, the reference ground terminal, the floating power positive terminal, the high-side driving signal output terminal, and the floating ground terminal are located at the third end of the driving chip; the second fault signal output / enable shutdown control terminal is located at the fourth end of the driving chip.

[0018] More optionally, the first side of the package housing includes, in order along the direction from the first driving chip to the third driving chip, a first U-phase DC negative terminal pin, a first common ground pin, a U-phase high-side driving signal input pin, a U-phase low-side driving signal input pin, a first positive power supply terminal pin, a V-phase high-side driving signal input pin, a V-phase low-side driving signal input pin, a temperature sensing output pin, an overcurrent detection pin, a fault reporting / enable shutdown pin, a W-phase high-side driving signal input pin, a W-phase low-side driving signal input pin, a second positive power supply terminal pin, a second common ground pin, and a second U-phase DC negative terminal pin; The second side of the package housing includes, in order along the direction from the third half-bridge structure to the first half-bridge structure, a DC positive terminal pin, a W-phase floating power positive terminal pin, a W-phase output pin, a W-phase DC negative terminal pin, a V-phase DC negative terminal pin, a V-phase output pin, a V-phase floating power positive terminal pin, a U-phase floating power positive terminal pin, and a U-phase output pin; Among them, each pin is correspondingly arranged with the ports of the corresponding driving chip and half-bridge structure.

[0019] Optionally, a pair of screw mounting holes are further provided on the third side and / or the fourth side of the compact intelligent power module, and the third side and the fourth side are oppositely arranged.

[0020] To achieve the above and other related purposes, the present invention provides an electronic product, which at least includes the above-mentioned compact intelligent power module.

[0021] As described above, the compact intelligent power module and the electronic product of the present invention have the following beneficial effects: 1. The compact intelligent power module and electronic product of the present invention arrange six power devices with three half - bridge structures on the lead frame in the order of "high - low" interval, and lead out the positive terminal (VB) of the floating power supply of the driving chip to the high - voltage side pin through the base island. On the premise of meeting the electrical connection requirements, the low - voltage and high - voltage working pins are respectively arranged on both sides of the package housing to achieve high - voltage and low - voltage isolation, and at the same time improve the space utilization rate of the high - voltage side pins.

[0022] 2. The arrangement of each pin in the compact intelligent power module and electronic product of the present invention meets the creepage distance requirements and complies with safety regulations.

[0023] 3. The compact intelligent power module and electronic product of the present invention rationally utilize the pins, adding functions such as over - current protection, fault report output, shutdown enable control, over - temperature protection, etc. The overall performance and reliability are greatly improved; further using the same driving chip, the product parameter consistency is high, which also reduces the complexity of wafer processing and packaging, and does not cause trouble to supply and production.

[0024] 4. In the compact intelligent power module and electronic product of the present invention, the positive terminals of the power supplies for the two - phase driving chips share one pin, reducing the number of pins at the power supply end, making the PCB wiring more flexible and simple.

[0025] 5. The compact intelligent power module and electronic product of the present invention integrate the bootstrap diode onto the driving chip, reducing the package wire bonding, saving the internal space, and further improving the reliability.

[0026] 6. The compact intelligent power module and electronic product of the present invention have a compact external structure, small size, and are provided with screw mounting holes for fixing the radiator. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 It shows a schematic diagram of the pins of the compact intelligent power module of the present invention.

[0028] Figure 2 It shows a schematic diagram of the circuit structure of the compact intelligent power module of the present invention.

[0029] Figure 3 It shows a schematic diagram of the internal frame and wire bonding of the compact intelligent power module of the present invention.

[0030] Figure 4 It shows a schematic diagram of the port definition and distribution of the driving chip of the present invention.

[0031] DESCRIPTION OF REFERENCE NUMERALS 100 - Compact intelligent power module; 110 - Encapsulation housing; 11a - First floating power supply base island; 11b - Second floating power supply base island; 11c - Third floating power supply base island; 120 - Common ground base island; 130 - DC positive terminal base island; 14a - First output base island; 14b - Second output base island; 14c - Third output base island; 150 - DC negative terminal base island; 160 - Screw mounting hole. Detailed implementation manners

[0032] The following uses specific specific examples to illustrate the implementation manners of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation manners. Various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0033] Please refer to Figures 1 to 4 It should be noted that the diagrams provided in this embodiment only illustrate the basic concept of the present invention in a schematic manner. Therefore, only the components related to the present invention are shown in the diagrams, rather than being drawn according to the number, shape, and size of the components in actual implementation. The types, quantities, and proportions of the components in actual implementation can be arbitrarily changed, and the component layout type may also be more complex.

[0034] As Figures 1 to 4 shown, the present invention provides a compact intelligent power module 100, and the compact intelligent power module 100 includes: An encapsulation housing 110, a lead frame (multiple base islands) disposed in the encapsulation housing 110, and three drive chips and three half - bridge structures disposed on the lead frame.

[0035] As Figure 2 shown, each drive chip is respectively the first drive chip IC1 corresponding to U, the second drive chip IC2 corresponding to V, and the third drive chip IC3 corresponding to W, and each drives a half - bridge structure in one - to - one correspondence. Each half - bridge structure includes a high - side power device and a low - side power device; the high - side power device corresponding to U is denoted as H1, and the low - side power device is denoted as L1; the high - side power device corresponding to V is denoted as H2, and the low - side power device is denoted as L2; the high - side power device corresponding to W is denoted as H3, and the low - side power device is denoted as L3; each power device can be implemented by including but not limited to devices such as IGBT, MOSFET, etc., and will not be elaborated here one by one.

[0036] As Figures 1 to 3As shown in the figure, each driving chip is arranged on one side close to the first side edge of the packaging housing 110 and arranged in sequence along the first side edge; each group of half-bridge structures is arranged on one side close to the second side edge of the packaging housing 110 and arranged in one-to-one correspondence with each driving chip, and the high-side power devices and low-side power devices in the three groups of half-bridge structures are spaced at intervals in sequence. By setting the floating power supply base island, the positive end of the floating power supply of the driving chip is led out to the second side edge of the packaging housing 110, so that the low-voltage pins and high-voltage pins of the compact intelligent power module 100 are respectively arranged on the first side edge and the second side edge of the packaging housing 110, and the creepage distance requirement is met; the first side edge and the second side edge are arranged opposite to each other, and the first side edge and the second side edge are the long sides of the packaging housing 110.

[0037] Exemplarily, as Figure 3 shown in the figure, in this embodiment, the first side edge of the packaging housing 110 is the left long side; in actual use, the direction of the first side edge is different according to different placement directions, and this embodiment is not limiting. The first driving chip IC1, the second driving chip IC2 and the third driving chip IC3 are arranged on the left side of the packaging housing 110 and arranged in sequence along the extension direction of the long side. The first group of half-bridge structures, the second group of half-bridge structures and the third group of half-bridge structures are arranged on the right side of the packaging housing 110 and arranged in sequence along the extension direction of the long side; that is, the high-side power device H1 and the low-side power device L1 are the first group of half-bridge structures, corresponding to the first driving chip IC1, and located at the upper end on the right side inside the packaging housing 110; the high-side power device H2 and the low-side power device L2 are the second group of half-bridge structures, corresponding to the second driving chip IC2, and located below the first group of half-bridge structures; the high-side power device H3 and the low-side power device L3 are the third group of half-bridge structures, corresponding to the third driving chip IC3, and located below the second group of half-bridge structures. Further, the six power devices are arranged in a high-power - low-power spaced manner in sequence; that is, the low-side power device L1, the high-side power device H1, the low-side power device L2, the high-side power device H2, the low-side power device L3 and the high-side power device H3 are arranged from top to bottom in sequence, so as to facilitate wire bonding from the power device to the driving chip.

[0038] More specifically, as an example, each drive chip uses the same chip (i.e., the parameters such as the functions, ports, and sizes of each drive chip are the same), and all include a drive unit, a fault output shutdown function unit, a temperature detection unit, and an overcurrent detection unit; Exemplarily, each drive chip uses the same BOM (Bill of Materials). Each drive chip has undervoltage protection, overtemperature protection, and overcurrent protection functions, realizing the shutdown protection of the global module in abnormal situations and preventing the power device from working under abnormal conditions. Among them, the drive unit generates the high-side drive signal and the low-side drive signal corresponding to the half-bridge structure based on the externally provided high-side drive input signal and low-side drive input signal; the temperature detection unit detects the working environment temperature at a preset position and generates a corresponding temperature detection signal; the overcurrent detection unit detects the current flowing through each group of half-bridge structures and generates a corresponding overcurrent detection signal; when overtemperature or overcurrent is detected, the fault output shutdown function unit triggers the protection state and reports the fault state outward through the corresponding port (SD / FO). The external controller can also give a low-level signal to this port (SD / FO) to put the drive chip in the reset state and stop working. As Figure 4As shown, in this embodiment, the port distribution and definition of the driving chip include, in clockwise order, an overcurrent detection terminal CSC, a temperature sensing output terminal VOT, a positive terminal VCC of the first power supply, a low-side drive signal input terminal INL, a high-side drive signal input terminal INH, a ground terminal GND, a positive terminal VCC of the second power supply, a first fault signal output / enable shutdown control terminal SD / FO, a low-side drive signal output terminal LO, a reference ground terminal VSesd, a floating power supply positive terminal VB, a high-side drive signal output terminal HO, a floating ground terminal VS, and a second fault signal output / enable shutdown control terminal SD / FO. Among them, the overcurrent detection terminal CSC, the temperature sensing output terminal VOT, the positive terminal VCC of the first power supply, and the low-side drive signal input terminal INL are located at the first end of the driving chip; the high-side drive signal input terminal INH, the ground terminal GND, the positive terminal VCC of the second power supply, and the first fault signal output / enable shutdown control terminal SD / FO are located at the second end of the driving chip; the low-side drive signal output terminal LO, the reference ground terminal VSesd, the floating power supply positive terminal VB, the high-side drive signal output terminal HO, and the floating ground terminal VS are located at the third end of the driving chip; the second fault signal output / enable shutdown control terminal SD / FO is located at the fourth end of the driving chip. Further, the distance between the temperature sensing output terminal VOT and the positive terminal VCC of the first power supply, and the distance between the positive terminal VCC of the first power supply and the low-side drive signal input terminal INL are relatively large (greater than the distances between other adjacent ports at the same end), and the distance between the first fault signal output / enable shutdown control terminal SD / FO and the low-side drive signal output terminal LO, and the distance between the low-side drive signal output terminal LO and the reference ground terminal VSesd are also relatively large (greater than the distances between other adjacent ports at the same end), so as to facilitate wire bonding.

[0039] Among them, the functions of temperature detection and overcurrent detection only need to be implemented by one chip. At this time, the corresponding ports (VOT and CSC) on the driving chip that need to implement the temperature detection function and the overcurrent detection function are led out, and the corresponding ports on the driving chip that do not need to implement the temperature detection function and the overcurrent detection function may not be led out. As Figure 2 shown, in this embodiment, the ports VOT and CSC of the second driving chip IC2 are led out to implement the temperature detection function and the overcurrent detection function; the ports VOT of the first driving chip IC1 and the third driving chip IC3 are left floating, and the port CSC is grounded. In actual use, the first driving chip IC1 or the third driving chip IC3 can also be used to implement the temperature detection function and the overcurrent detection function; the temperature detection function and the overcurrent detection function can also be completed by two driving chips respectively, which will not be elaborated one by one here. As another example, each driving chip can also be set as different types of chips according to needs, which will not be elaborated one by one here.

[0040] More specifically, the compact intelligent power module 100 further includes a bootstrap diode disposed between the positive power supply terminal VCC and the floating power supply positive terminal VB of each drive chip. As an example, each bootstrap diode is integrated into the corresponding drive chip, thereby reducing internal packaging wire bonding, saving internal space, and further improving reliability. As another example, each bootstrap diode is disposed in the package housing 110 and is electrically connected to the corresponding drive chip through leads, which will not be elaborated here one by one.

[0041] As Figure 3 shown, the floating power supply positive terminal VB of the first drive chip IC1 is connected to the first floating power supply base island 11a of the lead frame through a lead, and then led out to the U-phase floating power supply positive terminal pin VBU through the first floating power supply base island 11a. The first floating power supply base island 11a is disposed between the high-side power device H1 and the low-side power device L1 of the first set of half-bridge structures. The floating power supply positive terminal VB of the second drive chip IC2 is connected to the second floating power supply base island 11b of the lead frame through a lead, and then led out to the V-phase floating power supply positive terminal pin VBV through the second floating power supply base island 11b. The second floating power supply base island 11b is disposed between the first set of half-bridge structures and the second set of half-bridge structures. The floating power supply positive terminal VB of the third drive chip IC3 is connected to the third floating power supply base island 11c of the lead frame through a lead, and then led out to the W-phase floating power supply positive terminal pin VBW through the third floating power supply base island 11c. The third floating power supply base island 11c is disposed between the high-side power device H3 and the low-side power device L3 of the third set of half-bridge structures. By means of the floating power supply base island, the pins corresponding to the floating power supply positive terminals of each drive chip are set to the second side of the package housing 110 to improve the space utilization rate of the second side on the basis of meeting the creepage distance; at the same time, the internal wire bonding difficulty is reduced based on the setting of the positions of the floating power supply base islands. Other ports of each drive chip and each power device are led out to the corresponding pins according to actual needs.

[0042] Specifically, as an implementation manner, the second floating power supply base island 11b includes a first part and a second part that are coupled; wherein, the first part is disposed between the high-side power device H1 of the first set of half-bridge structures and the low-side power device L2 of the second set of half-bridge structures, and the second part is disposed between the second drive chip IC2 and the low-side power device L2 of the second set of half-bridge structures to facilitate internal wire bonding in the package housing; it should be noted that the first part and the second part can be integrated together after being separately formed, or the two parts can be integrally formed. As Figure 3As shown, one end of the first part extends to the positive terminal pin VBV of the floating power supply of phase V, and the other end is connected to the second part; the second part extends towards the high-side power device H2 of the second group of half-bridge structures and makes its end close to the high-side power device H2 of the second group of half-bridge structures. In this embodiment, the second part passes through the lead between the low-side drive signal output terminal LO and the reference ground terminal VSesd of the low-side power device L2 of the second group of half-bridge structures and the second drive chip IC2, extends and approaches the high-side power device H2 of the second group of half-bridge structures, and realizes the electrical connection between the second floating power supply base island 11b and the positive terminal VB of the floating power supply of the second drive chip through the end of the second part; in actual use, the number and definition of the leads passed through by the second part are determined based on the port design of the drive chip, and are not limited to this embodiment.

[0043] In this embodiment, the first side of the encapsulation housing 110 includes a first U-phase DC negative terminal pin NU, a first common ground pin COM, a U-phase high-side drive signal input pin INUH, a U-phase low-side drive signal input pin INUL, a first power supply positive terminal pin VCCU / V, a V-phase high-side drive signal input pin INVH, a V-phase low-side drive signal input pin INVL, a temperature sensing output pin VOT, an overcurrent detection pin CSC, a fault reporting / enable shutdown pin VFO / SD, a W-phase high-side drive signal input pin INWH, a W-phase low-side drive signal input pin INWL, a second power supply positive terminal pin VCCW, a second common ground pin COM, and a second U-phase DC negative terminal pin NU, which are arranged in sequence along the direction from the first drive chip IC1 to the third drive chip IC3; the second side of the encapsulation housing 110 includes a DC positive terminal pin P, a W-phase floating power supply positive terminal pin VBW, a W-phase output pin VSW, a W-phase DC negative terminal pin NW, a V-phase DC negative terminal pin NV, a V-phase output pin VSV, a V-phase floating power supply positive terminal pin VBV, a U-phase floating power supply positive terminal pin VBU, and a U-phase output pin VSU, which are arranged in sequence along the direction from the third half-bridge structure to the first half-bridge structure; wherein, each pin is correspondingly arranged with the ports of the corresponding drive chip and the half-bridge structure. The high-side drive signal input terminals INH and low-side drive signal input terminals INL of each drive chip, the temperature sensing output terminal VOT and overcurrent detection terminal CSC of the second drive chip IC2 are led out to the pins at the corresponding positions; the ground terminals GND of each drive chip and the overcurrent detection terminals CSC of the first drive chip IC1 and the second drive chip IC2 are led out to the corresponding pins through a common ground island; the first power supply positive terminal VCC of the first drive chip IC1 and the second power supply positive terminal VCC of the second drive chip IC2 are led out to the same pin at the corresponding position; the second fault signal output / enable shutdown control terminal SD / FO of the first drive chip IC1 is electrically connected to the first fault signal output / enable shutdown control terminal SD / FO of the second drive chip IC2 through a lead wire, and the first fault signal output / enable shutdown control terminal SD / FO of the second drive chip IC2 and the first fault signal output / enable shutdown control terminal SD / FO of the third drive chip IC3 are led out to the same pin at the corresponding position; wherein, the corresponding position means that the arrangement order of each lead-out port and each pin is designed such that the lead wires between them will not cross, that is, the above-mentioned each pin is correspondingly arranged with the port of the corresponding drive chip.

[0044] Specifically, as Figure 3As shown, each driving chip is arranged on the same common ground base island 120 of the lead frame. The ground terminal GND of each driving chip is connected to the common ground base island 120 through a lead, and is led out to the common ground pin COM through the common ground base island 120. The second fault signal output terminal / enable shutdown control terminal SD / FO of the second driving chip IC2 and the first fault signal output terminal / enable shutdown control terminal SD / FO of the third driving chip IC3 are connected to the same fault reporting / enable shutdown pin VFO / SD through a lead; the second fault signal output terminal / enable shutdown control terminal SD / FO of the first driving chip IC1 is wire-bonded to the first fault signal output terminal / enable shutdown control terminal SD / FO of the second driving chip IC2, and then connected to the fault reporting / enable shutdown pin VFO / SD through the internal trace of the second driving chip IC2; the temperature sensing output terminal VOT of the second driving chip IC2 is connected to the temperature sensing output pin VOT through a lead, and the overcurrent detection terminal CSC of the second driving chip IC2 is connected to the overcurrent detection pin CSC through a lead; the positive terminal VCC of the first power supply of the first driving chip IC1 and the positive terminal VCC of the second power supply of the second driving chip IC2 are connected to the positive terminal pin VCCU / V of the first power supply through a lead, and the positive terminal VCC of the first power supply of the third driving chip IC3 is connected to the positive terminal pin VCCW of the second power supply through a lead (the positive terminals of the power supplies of the second driving chip and the third driving chip can also be led out to the same pin); the high-side driving signal input terminal INH of the first driving chip IC1 is connected to the U-phase high-side driving signal input pin INUH through a lead, and the low-side driving signal input terminal INL is connected to the U-phase low-side driving signal input pin INUL through a lead; the high-side driving signal input terminal INH of the second driving chip IC2 is connected to the V-phase high-side driving signal input pin INVH through a lead, and the low-side driving signal input terminal INL is connected to the V-phase low-side driving signal input pin INVL through a lead; the high-side driving signal input terminal INH of the third driving chip IC3 is connected to the W-phase high-side driving signal input pin INWH through a lead, and the low-side driving signal input terminal INL is connected to the W-phase low-side driving signal input pin INWL through a lead.

[0045] Further, in this example, to simplify the wire bonding difficulty and complexity, the common ground pin COM is set as pin 2 (i.e., the first common ground pin) and pin 14 (i.e., the second common ground pin) on both sides of the other low-voltage pins of the driving chip; the U-phase high-side drive signal input pin INUH, the U-phase low-side drive signal input pin INUL, and the positive terminal pin VCCU / V of the first power supply are respectively set as pins 3, 4, and 5 near the left side of the first driving chip IC1 (the order of pins 2, 3, 4, and 5 is the same as the order of the corresponding ports on the first driving chip IC1). Similarly, the V-phase high-side drive signal input pin INVH, the V-phase low-side drive signal input pin INVL, the temperature sensing output pin VOT, the overcurrent detection pin CSC, and the fault reporting / enable shutdown pin VFO / SD are respectively set as pins 6, 7, 8, 9, and 10 near the left side of the second driving chip IC2 (the same as the order of the corresponding ports on the second driving chip IC2). The W-phase high-side drive signal input pin INWH, the W-phase low-side drive signal input pin INWL, and the positive terminal pin VCCW of the second power supply are respectively set as pins 11, 12, and 13 near the left side of the third driving chip IC3 (the same as the order of the corresponding ports on the third driving chip IC3). In actual use, the pin order of the compact intelligent power module 100 can also be adjusted according to the arrangement order of the ports on the driving chip, not limited to this embodiment.

[0046] Specifically, as Figure 3As shown, in this embodiment, the high-side power devices in the three half-bridge structures are arranged on the same DC positive terminal base island 130 of the lead frame. The bottom drain is electrically connected to the DC positive terminal base island 130 through conductive adhesive, and the DC positive terminal base island 130 is led out to the DC positive terminal pin P. The low-side power device L1 is arranged on the first output base island 14a of the lead frame. The bottom drain is electrically connected to the first output base island 14a through conductive adhesive, and the first output base island 14a is led out to the U-phase output pin VSU; the low-side power device L2 is arranged on the second output base island 14b of the lead frame. The bottom drain is electrically connected to the second output base island 14b through conductive adhesive, and the second output base island 14b is led out to the V-phase output pin VSV; the low-side power device L3 is arranged on the third output base island 14c of the lead frame. The bottom drain is electrically connected to the third output base island 14c through conductive adhesive, and the third output base island 14c is led out to the W-phase output pin VSW. The source electrodes at the tops of the high-side power devices are respectively connected to the floating ground terminal VS of the corresponding driving chip and the output base island of the corresponding low-side power device through leads, and the gate electrodes at the tops are connected to the high-side driving signal output terminal HO of the corresponding driving chip through leads; the source electrodes at the tops of the low-side power devices are respectively connected to the reference ground terminal VSesd of the corresponding driving chip and the corresponding DC negative terminal pin through leads, and the gate electrodes at the tops are connected to the low-side driving signal output terminal LO of the corresponding driving chip through leads. It should be noted that each power device can be implemented by a single chip internally provided with parallel power transistors and freewheeling diodes. Among them, the cathode of the freewheeling diode is connected to the high-voltage end of the corresponding power transistor, and the anode is connected to the low-voltage end of the corresponding power transistor; it can also be implemented by a parallel combination of a power transistor chip and a freewheeling diode chip (the specific connection relationships of each port are not elaborated here one by one). At this time, as an example, each freewheeling diode chip can be arranged on the same base island as the corresponding power transistor chip and is connected in parallel through leads.

[0047] Further, in this example, the DC positive terminal pin P, the positive terminal pin VBW of the floating power supply of the W phase, the output pin VSW of the W phase, the DC negative terminal pin NW of the W phase, the DC negative terminal pin NV of the V phase, the output pin VSV of the V phase, the positive terminal pin VBV of the floating power supply of the V phase, the positive terminal pin VBU of the floating power supply of the U phase, and the output pin VSU of the U phase are respectively set as pin 16, pin 17, pin 18, pin 19, pin 20, pin 21, pin 22, pin 23, and pin 24 in sequence from the lower end to the upper end along the second side; at this time, the above-mentioned pins are respectively set corresponding to the ports of the corresponding half-bridge structure (the leads do not cross). The lead frame further includes a DC negative terminal base island 150 disposed between the common ground base island 120 and the DC positive terminal base island 130. The DC negative terminal (the source electrode of the low-side power device L1) of the first group of half-bridge structures is connected to the DC negative terminal base island 150 through a lead, and is led out to the DC negative terminal pin NU of the U phase through the DC negative terminal base island 150. The DC negative terminal pin NU of the U phase is set as pin 1 (i.e., the first DC negative terminal pin of the U phase) and pin 15 (i.e., the second DC negative terminal pin of the U phase) on the first side, and is respectively located above pin 2 and below pin 14.

[0048] As Figure 3 shown, the low-voltage pins of each drive chip and the DC negative terminal pin NU of the first group of half-bridge structures are disposed on the first side of the package housing 110. The pins on the first side are all low-voltage working pins, and the distance between each pin meets the requirements of the low-voltage creepage distance. As an example, the center distance between adjacent two pins is set to 1.778 mm.

[0049] As Figure 3 shown, the DC positive terminal pin P, the positive terminal pins of the floating power supply of each drive chip, the output pins of each half-bridge structure, and the DC negative terminal pins of the second group and the third group of half-bridge structures are disposed on the second side of the package housing 110; the DC positive terminal pin P is taken as a group, the output pins of each half-bridge structure and the positive terminal pins of the floating power supply of the corresponding drive chips are taken as a group (i.e., the positive terminal pin VBW of the floating power supply of the W phase and the output pin VSW of the W phase are taken as a group, the output pin VSV of the V phase and the positive terminal pin VBV of the floating power supply of the V phase are taken as a group, the positive terminal pin VBU of the floating power supply of the U phase and the output pin VSU of the U phase are taken as a group), the DC negative terminal pin NW of the W phase and the DC negative terminal pin NV of the V phase are taken as a group, a total of five groups; the working voltages of the pins within each group are relatively small (for example, within 15V), the distance between each pin meets the requirements of the low-voltage creepage distance. As an example, the center distance between adjacent two pins is set to 1.778 mm; the working voltages between each group are relatively large (for example, exceeding 300V), and the distance between each group meets the requirements of the high-voltage creepage distance. As an example, the distance between groups is designed to be 3.8 mm. As an example, the long side dimension of this compact intelligent power module 100 is set to 29 ± 0.2 mm, and the short side dimension is set to 12 ± 0.2 mm.

[0050] Exemplarily, a pair of screw mounting holes 160 are further provided on the third side and the fourth side of the compact intelligent power module 100 for fixing the radiator; in actual use, the screw mounting holes 160 may also be provided only on the third side or the fourth side, not limited to this embodiment. Among them, the third side and the fourth side are oppositely arranged; in this example, the encapsulation housing 110 is a rectangular structure, the first side and the second side are the long sides oppositely arranged, and the third side and the fourth side are the short sides oppositely arranged.

[0051] In the present invention, the floating power supply positive terminal and the floating ground terminal are led out to adjacent pins through the design of the lead frame, and the high and low interval arrangement order of the power devices is not affected; the DC negative terminals of the V phase and the W phase are also led out to adjacent pins to meet the creepage distance requirements.

[0052] The present invention also provides an electronic product, which includes the compact intelligent power module 100 of the present invention. It may also include components such as a three-phase motor and a motor control module; the electronic product includes but is not limited to white goods, which will not be elaborated here one by one.

[0053] In summary, the present invention provides a compact intelligent power module and an electronic product, including an encapsulation housing, three driving chips and three half-bridge structures arranged on a lead frame within the encapsulation housing; each driving chip is arranged on one side close to the first side of the encapsulation housing and is arranged in sequence along the first side; each half-bridge structure is arranged on one side close to the second side of the encapsulation housing and is arranged in one-to-one correspondence with each driving chip, and the high-side power devices and the low-side power devices in the three half-bridge structures are spaced at intervals in sequence; the low-voltage pins and the high-voltage pins of the compact intelligent power module are respectively arranged on the first side and the second side and meet the creepage distance requirements; the first side and the second side are oppositely arranged; among them, the floating power supply positive terminal of the first driving chip is led out to the corresponding pin through the first floating power supply base island, and the first floating power supply base island is arranged between the high-side power device and the low-side power device of the first half-bridge structure; the floating power supply positive terminal of the second driving chip is led out to the corresponding pin through the second floating power supply base island, and the second floating power supply base island is arranged between the first half-bridge structure and the second half-bridge structure; the floating power supply positive terminal of the third driving chip is led out to the corresponding pin through the third floating power supply base island, and the third floating power supply base island is arranged between the high-side power device and the low-side power device of the third half-bridge structure. The present invention meets the high and low interval arrangement order of the transistors and also meets the requirements of the external pin arrangement; uses reusable and completely identical driving chips to reduce the chip design and tape-out complexity; also reduces the power supply positive terminal pins, making the peripheral PCB wiring design more flexible and simple. Therefore, the present invention effectively overcomes various shortcomings in the prior art and has high industrial utilization value.

[0054] The above embodiments are only illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical idea disclosed by the present invention should still be covered by the claims of the present invention.

Claims

1. A compact intelligent power module, characterized in that, The described compact intelligent power module at least includes: A packaging housing, a first driving chip, a second driving chip, a third driving chip, a first half-bridge structure, a second half-bridge structure, and a third half-bridge structure arranged on a lead frame within the packaging housing. Each half-bridge structure includes a high-side power device and a low-side power device. Each driving chip is arranged on one side close to the first side edge of the packaging housing and is arranged in sequence along the first side edge. Each half-bridge structure is arranged on one side close to the second side edge of the packaging housing and is arranged in one-to-one correspondence with each driving chip. The high-side power devices and low-side power devices in the three half-bridge structures are spaced at intervals in sequence. The low-voltage pins and high-voltage pins of the compact intelligent power module are respectively arranged on the first side edge and the second side edge and meet the creepage distance requirements. The first side edge and the second side edge are arranged opposite to each other. Among them, the positive end of the floating power supply of the first driving chip is led out to the corresponding pin through a first floating power supply base island, and the first floating power supply base island is arranged between the high-side power device and the low-side power device of the first half-bridge structure. The positive end of the floating power supply of the second driving chip is led out to the corresponding pin through a second floating power supply base island, and the second floating power supply base island is arranged between the high-side power device of the first half-bridge structure and the low-side power device of the second half-bridge structure. The positive end of the floating power supply of the third driving chip is led out to the corresponding pin through a third floating power supply base island, and the third floating power supply base island is arranged between the high-side power device and the low-side power device of the third half-bridge structure.

2. The compact intelligent power module according to claim 1, characterized in that: The second floating power supply base island includes a coupled first part and a second part. The first part is arranged between the high-side power device of the first half-bridge structure and the low-side power device of the second half-bridge structure, and the second part is arranged between the second driving chip and the low-side power device of the second half-bridge structure.

3. The compact intelligent power module according to claim 2, wherein: The second part passes through the lead between the low-side driving signal output terminal of the second driving chip and the reference ground of the low-side power device of the second half-bridge structure, and realizes electrical connection with the positive end of the floating power supply of the second driving chip through the end of the second part.

4. The compact intelligent power module according to claim 1, characterized in that: The low-voltage pins of each driving chip and the DC negative terminal pin of the first half-bridge structure are arranged on the first side edge of the packaging housing. The DC bus positive ends of each half-bridge structure are connected to the same DC positive terminal pin. The DC positive terminal pin, the positive end pins of the floating power supplies of each driving chip, the output pins of each half-bridge structure, and the DC negative terminal pins of the second half-bridge structure and the third half-bridge structure are arranged on the second side edge of the packaging housing. The DC positive terminal pin is taken as one group, the output pins of each half-bridge structure and the positive end pins of the floating power supplies of the corresponding driving chips are taken as one group, and the DC negative terminal pins of the second half-bridge structure and the third half-bridge structure are taken as one group. The spacing between each group meets the high-voltage creepage distance requirements, and the spacing between the pins within the same group meets the low-voltage creepage distance requirements.

5. The compact intelligent power module according to claim 1, wherein: The positive power supply terminals of the first driving chip and the second driving chip are led out to the same pin; or the positive power supply terminals of the second driving chip and the third driving chip are led out to the same pin.

6. The compact intelligent power module according to claim 1, characterized in that: The lead frame further includes a common ground island, a DC positive terminal island, a DC negative terminal island, and three output islands; Each driving chip is disposed on the common ground island, and the grounding terminals of each driving chip are connected to the common ground island through leads and led out to corresponding pins; Each high-side power device in the three half-bridge structures is disposed on the DC positive terminal island, and each low-side power device is disposed on the corresponding output island. The DC positive terminal island and each output island are led out to corresponding pins; The DC negative terminal island is disposed between the common ground island and the DC positive terminal island. The DC negative terminal of the first half-bridge structure is connected to the DC negative terminal island through a lead and led out to a corresponding pin.

7. The compact intelligent power module according to any one of claims 1-6, characterized in that: The compact intelligent power module further includes bootstrap diodes disposed between the positive power supply terminals and the floating positive power supply terminals of each driving chip, and each bootstrap diode is integrated in the corresponding driving chip.

8. The compact intelligent power module according to claim 1, wherein: Each driving chip uses the same chip.

9. The compact intelligent power module according to claim 8, characterized in that: Each driving chip includes a driving unit, a fault output shutdown function unit, a temperature detection unit, and an overcurrent detection unit.

10. The compact intelligent power module according to claim 9, characterized in that: The output terminals of the fault output shutdown function units of each driving chip are connected to the same fault reporting / enable shutdown pin; the output terminal of the temperature detection unit of one driving chip is led out to a corresponding pin; the input terminal of the overcurrent detection unit of one driving chip is led out to a corresponding pin, and the input terminals of the overcurrent detection units of the other two driving chips are grounded.

11. The compact intelligent power module according to any one of claims 8-10, characterized in that: Each driving chip includes, in clockwise order, an overcurrent detection terminal, a temperature sensing output terminal, a first positive power supply terminal, a low-side driving signal input terminal, a high-side driving signal input terminal, a grounding terminal, a second positive power supply terminal, a first fault signal output / enable shutdown control terminal, a low-side driving signal output terminal, a reference ground terminal, a floating positive power supply terminal, a high-side driving signal output terminal, a floating ground terminal, and a second fault signal output / enable shutdown control terminal; Among them, the overcurrent detection terminal, the temperature sensing output terminal, the first positive power supply terminal, and the low-side driving signal input terminal are located at the first end of the driving chip; the high-side driving signal input terminal, the grounding terminal, the second positive power supply terminal, and the first fault signal output / enable shutdown control terminal are located at the second end of the driving chip; the low-side driving signal output terminal, the reference ground terminal, the floating positive power supply terminal, the high-side driving signal output terminal, and the floating ground terminal are located at the third end of the driving chip; the second fault signal output / enable shutdown control terminal is located at the fourth end of the driving chip.

12. The compact intelligent power module according to claim 11, characterized in that: The first side of the encapsulation housing includes, arranged in sequence along the direction from the first driving chip to the third driving chip, a first U-phase DC negative terminal pin, a first common ground pin, a U-phase high-side driving signal input pin, a U-phase low-side driving signal input pin, a first power supply positive terminal pin, a V-phase high-side driving signal input pin, a V-phase low-side driving signal input pin, a temperature sensing output pin, an overcurrent detection pin, a fault reporting / enable shutdown pin, a W-phase high-side driving signal input pin, a W-phase low-side driving signal input pin, a second power supply positive terminal pin, a second common ground pin, and a second U-phase DC negative terminal pin; The second side of the encapsulation housing includes, arranged in sequence along the direction from the third half-bridge structure to the first half-bridge structure, a DC positive terminal pin, a W-phase floating power supply positive terminal pin, a W-phase output pin, a W-phase DC negative terminal pin, a V-phase DC negative terminal pin, a V-phase output pin, a V-phase floating power supply positive terminal pin, a U-phase floating power supply positive terminal pin, and a U-phase output pin; Among them, each pin is correspondingly arranged with the ports of the corresponding driving chip and half-bridge structure.

13. The compact intelligent power module according to claim 1, wherein: A pair of screw mounting holes are further provided on the third side and / or the fourth side of the compact intelligent power module, and the third side and the fourth side are oppositely arranged.

14. An electronic product, characterized in that, The electronic product at least includes the compact intelligent power module according to any one of claims 1-13.

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