Detector electrode manufacturing method and detector

Abstract

The invention provides a detector electrode manufacturing method and a detector, and relates to the technical field of semiconductor devices.The method comprises the steps that firstly, a seed metal layer is evaporated on the surface of a wafer, then photoetching is conducted after photoresist is evenly coated on the seed metal layer, an electrode area to be electroplated is exposed, and an electroplating point area is determined; and then performing plasma cleaning on the photoetched electrode region, performing electroplating thickening on the electrode region based on the electroplating point region, and stripping the photoresist to form an electrode after electroplating thickening is completed. According to the method, on the basis that the efficiency of the electroplating process is improved, the stability of the gold plating process is guaranteed, and the finally manufactured electrode is uniform in thickness, free of precipitates and good in appearance.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor devices, and particularly relates to a method for fabricating a detector electrode and a detector. Background Art

[0002] The electroless plating process is a self-catalytic gold plating process, and there are obvious defects in its core reaction mechanism, that is, the reaction process of gold plating with gold itself as a catalyst is extremely unstable, and macroscopic gold precipitation often occurs, that is, large particles of gold precipitate, resulting in abnormal appearance of the electrode. At the same time, the reaction rate cannot be effectively controlled, and the deposition of large particle gold precipitates also makes it difficult to ensure the uniformity of the electrode thickness.

[0003] Currently, almost all detectors on the market use the electroless plating process to thicken the electrodes. The chemicals required for the electroless plating process, such as metal complexing agents and ion supplements, have a long procurement cycle and a short shelf life, and are extremely easy to cause waste during use. Considering that the electroless plating solution is easily decomposed and discolored when exposed to light, it further increases the difficulty of storing the electroless plating solution during use and storage.

[0004] Therefore, an electrode manufacturing process that can ensure a stable gold plating process, improve the gold plating efficiency, and maintain a good appearance of the electrode needs to be studied urgently. Summary of the Invention

[0005] In view of the above-mentioned deficiencies in the prior art, the present invention provides a method for fabricating a detector electrode and a detector, which solves the technical problems of unstable gold plating process and uneven electrode appearance in the prior art.

[0006] On the one hand, the present invention provides a method for fabricating a detector electrode, including:

[0007] Evaporating a seed metal layer on the surface of a wafer;

[0008] Spin-coating a photoresist on the seed metal layer and then performing photolithography to expose the electrode area to be electroplated and determine the electroplating point area;

[0009] Performing plasma cleaning on the electrode area after photolithography, electroplating and thickening the electrode area based on the electroplating point area, and stripping the photoresist after completing the electroplating and thickening to form an electrode.

[0010] Optionally, the evaporating a seed metal layer on the surface of a wafer includes: spin-coating a first photoresist layer on the surface of the wafer and then performing photolithography to form an electrode window above the surface of the wafer, and retaining the first photoresist layer except for the electrode window and the electroplating point area, wherein the electrode window is used to determine the position and shape of the electrode area; evaporating a seed metal layer on the surface of the retained first photoresist layer and the area exposed by the electrode window.

[0011] Optionally, the lithography is performed after spin-coating the first photoresist layer on the wafer surface, including: the first photoresist layer of the electrode window is trapezoidal after development.

[0012] Optionally, the lithography is performed after spin-coating the photoresist on the seed metal layer to expose the electrode area to be electroplated and determine the electroplating point area, including: spin-coating the second photoresist layer on the seed metal layer and then performing lithography. After exposing and developing the second photoresist layer, the electrode area to be electroplated and the electroplating point area are exposed to the external environment, and a protective layer is formed above the non-electroplating area except the electrode area and the electroplating point area by using the second photoresist layer.

[0013] Optionally, the number of the electroplating point areas is multiple, and the multiple electroplating point areas are distributed in the arc or flat edge area of the wafer edge.

[0014] Optionally, the electroplating thickening of the electrode area based on the electroplating point area includes: applying an electroplating current based on the electroplating point area, and electroplating and thickening the electrode area on the seed metal layer through the seed metal layer.

[0015] Optionally, the current value of the electroplating current is the product of the effective area of the electrode area and the preset current density of the electroplating solution.

[0016] Optionally, after the electroplating thickening is completed, the photoresist is stripped to form an electrode, including: retaining the seed metal layer in the electrode area and the thickened electroplating on the seed metal layer, and stripping the seed metal layer and the photoresist on the wafer except the electrode area after the electroplating thickening is completed to form an electrode.

[0017] On the other hand, the present invention provides a detector, and the electrode of the detector is prepared by the method for manufacturing the detector electrode described in any one of the above.

[0018] Optionally, the detector includes: a substrate and the electrode; the substrate is prepared from the wafer, and the substrate is made of InP and InGaAs materials; the electrode is disposed on the surface of the substrate and includes the seed metal layer and the thickened electroplating disposed on the seed metal layer.

[0019] The method for fabricating a detector electrode and the detector provided by the present invention deposit a seed metal layer on the surface of a wafer. The seed metal layer serves as a continuous conductive layer to ensure that during the subsequent electroplating process, current can be evenly distributed to the area to be electroplated, guaranteeing the uniformity of electroplating in the area to be electroplated. The photolithography technique is used to expose the electrode area to be electroplated and determine the electroplating point area, enabling the electroplating process to be carried out at precise positions, improving the efficiency of the electroplating process. Combining with plasma cleaning further enhances the quality and uniformity of metal deposition during the electroplating process, preventing uneven thickness of the fabricated electrodes. On the basis of improving the efficiency of the electroplating process, the above method ensures the stability of the gold plating process, resulting in electrodes with uniform thickness, no precipitation, and good appearance.

[0020] Other features and advantages of the present invention will be described in the subsequent specification, and, in part, will be obvious from the specification, or can be understood by implementing the present invention. The objectives and other advantages of the present invention can be achieved and obtained by the structures specifically pointed out in the written specification, claims, and drawings.

[0021] The technical solution of the present invention will be further described in detail below through the drawings and embodiments. Description of the Drawings

[0022] The drawings are used to provide a further understanding of the present invention and constitute a part of the specification. They are used together with the embodiments of the present invention to explain the present invention and do not constitute a limitation to the present invention. In the drawings:

[0023] Figure 1 It is a schematic flowchart of the method for fabricating a detector electrode in an embodiment provided by the present application;

[0024] Figure 2 It is a cross-sectional view of a wafer and its surface before depositing the seed metal layer during the fabrication process in an embodiment provided by the present application;

[0025] Figure 3 It is a cross-sectional view of a wafer and its surface after depositing the seed metal layer during the fabrication process in an embodiment provided by the present application;

[0026] Figure 4 It is a cross-sectional view of a wafer and its surface after photolithography of the seed metal layer during the fabrication process in an embodiment provided by the present application;

[0027] Figure 5 It is a cross-sectional view of a wafer and its surface after electroplating during the fabrication process in an embodiment provided by the present application;

[0028] Figure 6 It is a cross-sectional view of a wafer and its surface after stripping the photoresist during the fabrication process in an embodiment provided by the present application.

[0029] In the figure:

[0030] 1. Wafer; 101. Wafer epitaxial layer; 102. Thin film layer; 2. Photoresist; 201. First photoresist layer; 202. Second photoresist layer; 3. Electrode window; 4. Seed metal layer; 5. Thickening electroplating; 6. Electrode. Detailed implementation manners

[0031] Hereinafter, exemplary embodiments of the present application will be described in more detail with reference to the accompanying drawings. Although the exemplary embodiments of the present application are shown in the drawings, it should be understood that the present application can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided so that the present application can be more thoroughly understood and the scope of the present application can be fully conveyed to those skilled in the art.

[0032] An embodiment of the present application provides a method for fabricating a detector electrode, as Figure 1 shown, the method includes the following steps:

[0033] First, a seed metal layer is evaporated on the surface of the wafer, and then photoresist is spin-coated on the seed metal layer and lithography is performed to expose the electrode area to be electroplated and determine the electroplating point area. After that, the electrode area after lithography is subjected to plasma cleaning, electroplating thickening is performed on the electrode area based on the electroplating point area, and the photoresist is stripped after the electroplating thickening is completed to form an electrode.

[0034] In the method for fabricating a detector electrode provided by the present application, a seed metal layer is evaporated on the surface of the wafer. The seed metal layer serves as a continuous conductive layer to ensure that in the subsequent electroplating process, current can be evenly distributed to the area to be electroplated, ensuring the uniformity of electroplating in the area to be electroplated; lithography technology is used to expose the electrode area to be electroplated and determine the electroplating point area, enabling the electroplating process to be carried out at precise positions, improving the efficiency of the electroplating process. Combined with plasma cleaning, the quality and uniformity of metal deposition in the electroplating process are further improved, preventing uneven thickness of the fabricated electrode. The above method ensures the stability of the gold plating process on the basis of improving the efficiency of the electroplating process, making the finally fabricated electrode have a uniform thickness, no precipitates generated, and a good appearance.

[0035] Specifically, in the above embodiment, evaporating the seed metal layer 4 on the surface of the wafer 1 includes: spin-coating the first photoresist layer 201 on the surface of the wafer 1 and then performing lithography to form an electrode window 3 above the surface of the wafer 1, and retaining the first photoresist layer 201 except for the electrode window 3 and the electroplating point area. Among them, the electrode window 3 is used to determine the position and shape of the electrode area; the seed metal layer 4 is evaporated on the surface of the retained first photoresist layer 201 and the area exposed by the electrode window 3.

[0036] Among them, evaporation coating is a physical vapor deposition technology widely used in fields such as semiconductor manufacturing, optical coating, and surface engineering. By heating materials in a vacuum environment to make them evaporate or sublimate, and condensing the vapor on the surface of a cold substrate to form a thin film. Since the whole process is carried out under high vacuum conditions, the introduction of impurities is reduced, and a very high-purity thin film can be obtained.

[0037] In this application, the seed metal layer 4 of evaporation coating needs to have good conductivity, and is preferably a multi-layer structure composed of titanium-platinum-gold materials.

[0038] Specifically, the wafer 1 specifically includes a thin film layer 102 and a wafer epitaxial layer 101 from top to bottom. Specifically, after a first photoresist layer 201 is spin-coated on the thin film layer 102 and then lithographed, the structure as shown in Figure 2 is formed. Among them, the first photoresist layer 201 laid above the thin film layer 102 forms an electrode window 3 after lithography, and as shown in Figure 3 the seed metal layer 4 of evaporation coating is laid on the surface of the remaining first photoresist layer 201 and the area exposed by the electrode window 3 to form a continuous conductive layer.

[0039] In this embodiment, the electrode window 3 is formed above the surface of the wafer 1 through lithography technology, which is convenient for accurately determining the position and shape of the electrode area in the subsequent process. Compared with the traditional process, lithography technology can achieve higher resolution and a smaller error range, ensuring that the electrode area meets the design requirements; the seed metal layer 4 is evaporated and deposited simultaneously in the remaining first photoresist layer 201 and the exposed area, ensuring that the entire surface of the wafer 1, including the area within the electrode window 3, is covered with a uniform conductive layer, ensuring the uniform distribution of the current density during the subsequent electroplating process, thereby improving the electroplating quality. The seed metal layer 4 continuously exists on the entire surface of the wafer 1, avoiding problems such as uneven electroplating or failure caused by local poor conductivity; the preparation of the seed metal layer 4 can be completed through one lithography and one evaporation coating operation, reducing the complexity and potential errors brought by multiple operations and improving production efficiency; and in this step, the first photoresist layer 201 is not stripped after lithography, intending to be stripped after the final electroplating with gold, so that the seed metal layer 4 in the non-electroplated area can be completely stripped off, and the second lithography makes the first photoresist layer 201 remain in the area except the electrode window 3, ensuring that the area covered by the first photoresist layer 201 will not be plated with gold during the subsequent electroplating process, ensuring that only the electrode area can be plated with gold, and improving the accuracy of the electroplating process.

[0040] Furthermore, after a first photoresist layer 201 is spin-coated on the surface of the wafer 1 and then lithographed, the first photoresist layer 201 including the electrode window 3 is trapezoidal after development.

[0041] Specifically, as shown in Figure 2As shown, after the first photoresist layer 201 of the electrode window 3 is developed, it is in an inverted trapezoidal shape, specifically presenting a form that is narrower at the top and wider at the bottom on the surface of the wafer 1.

[0042] In this embodiment, the electrode window 3 with a trapezoidal cross-section can reduce stress concentration at the edges, avoiding stress concentration that is likely to occur at the edges of the electrode window 3 with a right-angled rectangular cross-section, which may cause the photoresist 2 to crack or peel unevenly during the stripping process. Moreover, the trapezoidal cross-section provides a gradual transition from the area covered by the photoresist 2 to the exposed area, helping to evenly distribute stress, thereby reducing cracks and defects during the stripping process. Further, the design of the trapezoidal window makes it easier for the stripping tool to enter along the inclined plane and strip the photoresist 2, and the photoresist 2 is more likely to be completely removed during the stripping process, reducing the possibility of residues, which is very important for subsequent cleaning or further processing steps.

[0043] Specifically, in the above embodiment, after spin-coating the photoresist 2 on the seed metal layer 4, photolithography is performed to expose the electrode area to be electroplated and determine the electroplating point area 3, including: spin-coating the second photoresist layer 202 on the seed metal layer 4 and then performing photolithography. After exposing and developing the second photoresist layer 202, the electrode area to be electroplated and the electroplating point area 3 are exposed to the external environment, and a protective layer is formed above the non-electroplating area except for the electrode area and the electroplating point area 3 using the second photoresist layer 202.

[0044] Among them, the thickness of the second photoresist layer 202 is preferably 1.5 um - 2 um.

[0045] Specifically, first ensure that the surface of the seed metal layer 4 is clean and dust-free. Spin-coat the second photoresist layer 202 evenly on the surface of the seed metal layer 4, continuously adjust the thickness of the second photoresist layer 202, and then perform soft baking to remove impurities in the second photoresist layer 202 and improve adhesion. After that, the process of photolithography is required. Place the pre-designed mask plate in the lithography machine. There are pre-made patterns on the mask plate for corresponding to the electrode area and the contact points to be determined. Then, the exposure process is carried out, that is, irradiate the mask plate with ultraviolet light or deep ultraviolet light. The light passes through the transparent part of the mask plate and irradiates the second photoresist layer 202, causing a chemical change in the irradiated part. After exposure, immerse the wafer 1 in the developer or spray the developer, so that the second photoresist layer 202 dissolves or remains according to the chemical changes generated during exposure. For the technical solution provided in this application, the second photoresist layer 202 in the electrode area dissolves, forming a cross-sectional view as Figure 4 shown. After development is completed, thoroughly clean the wafer 1 with deionized water to remove the residual developer, and then place the wafer 1 on a hot plate for hard baking to further cure the second photoresist layer 202 and enhance its chemical resistance and mechanical stability.

[0046] In this embodiment, an accurate electrode window 3 is formed on the seed metal layer 4, and at the same time, the second photoresist layer 202 is used as a protective layer to cover the non-electroplating area, so as to ensure that the subsequent electroplating process only occurs in the predetermined electrode area and the electroplating point area 3, improving the accuracy of the electroplating process.

[0047] Specifically, in the above embodiment, the number of electroplating point areas is multiple, and the multiple electroplating point areas are distributed in the arc edge or flat edge area of the wafer 1 edge.

[0048] In this embodiment, by setting multiple electroplating point areas 3 at the edge of the wafer 1, the current can be more evenly distributed to the entire electroplating area, ensuring the consistency of the electroplating layer thickness, avoiding problems such as over-thick or over-thin local plating layers caused by uneven current density. The multiple electroplating point areas 3 reduce the current load on a single electroplating point area 3, thereby reducing the contact resistance and Joule heat effect, which helps to improve the electroplating efficiency and quality; the multiple electroplating point areas 3 increase the fault tolerance of the manufacturing method, preventing poor contact of a single electroplating point area 3 from affecting the electroplating effect, and at the same time facilitating the adjustment of the current distribution during the electroplating process; when it is necessary to form a complex pattern in the electrode area by electroplating, or when the electrode areas are scattered on the entire surface of the wafer 1, the multiple electroplating point areas 3 at the edge can better serve the electroplating requirements in all directions, ensuring the electroplating consistency at different positions. The electroplating point areas 3 located at the edge of the wafer 1 are easier to connect to external power supplies or test equipment, facilitating actual operation.

[0049] Specifically, in the above embodiment, electroplating thickening is performed on the electrode area based on the electroplating point area 3 to form the electrode 6, including: applying an electroplating current based on the electroplating point area, and electroplating and thickening the electrode area on the seed metal layer 4 through the seed metal layer 4 to form the electrode 6.

[0050] Among them, the electroplating rate is 0.2 um / min - 0.3 um / min.

[0051] In this embodiment, by applying an electroplating current to the electroplating point area 3 and using the seed metal layer 4 as a conductive layer, the electrode area not covered by the photoresist 2 is continuously electroplated, so that the thickness of the electrode area continuously increases, and finally the electrode 6 is formed. The thickness of the seed layer metal in the non-electrode area does not change because the surface is covered with the photoresist 2. The cross-sectional view of the wafer 1 surface after the electroplating process is as Figure 5 shown, and a thickened electroplating 5 is formed on the electrode area; in this application, controlling the electroplating rate helps to reduce possible defects such as bubbles and pinholes during the electroplating process, which is beneficial to forming a more delicate and flat surface microstructure, improving the mechanical strength and adhesion of the electrode 6, and further enhancing its durability and stability.

[0052] Furthermore, the current value of the electroplating current is the product of the effective area of the electrode region and the preset current density of the electroplating solution.

[0053] Among them, the preset current density of the electroplating solution is the optimal current density of the electroplating solution. Specifically, it refers to the current density value that can obtain the best electroplating effect under specific electroplating conditions. Its influencing factors include electroplating solution composition, substrate properties, temperature, stirring conditions, and requirements of the deposit, etc.

[0054] Specifically, taking the effective area of the electrode region obtained as 0.00017648 cm 2 as an example, the optimal current density of the electroplating solution obtained is 0.21 A / dm 2 , and based on this, the calculated current value of the electroplating current is 15 mA.

[0055] In this embodiment, by adjusting the current value according to the actual effective area of the electrode region, it can ensure that the current density remains consistent at each position, which helps to achieve a uniform electroplating rate and thickness distribution, avoids the problems of local over-thickness or under-thickness, and avoids equipment damage caused by excessive current or incomplete electroplating caused by too small current, improving the reliability and stability of the entire electroplating process; and a suitable current density can promote the formation of a dense and defect-free electroplating layer. An excessively high current density may cause problems such as surface roughness, bubbles or pinholes, while an excessively low current density may prolong the electroplating time and affect production efficiency. Therefore, by accurately calculating the current value, the best electroplating effect can be achieved while ensuring quality.

[0056] Specifically, in the above embodiment, after electroplating thickening, the photoresist 2 is peeled off to form an electrode, including: retaining the seed metal layer 4 in the electrode region and the thickened electroplating 5 on the seed metal layer 4, and peeling off the seed metal layer 4 and the photoresist 2 on the wafer 1 except the electrode region after electroplating thickening is completed to form an electrode.

[0057] In this embodiment, after electroplating is completed, the photoresist 2 needs to be removed to expose the non-electroplated area on the surface of the wafer 1. At this time, the photoresist 2 needs to be peeled off. Specifically, chemical solvents or plasma etching techniques are required to ensure that only the photoresist 2 is removed without damaging the formed electrode region. Finally, the electrode 6 formed by electroplating thickening is as Figure 6 shown.

[0058] The embodiments of the present application provide a detector, and the electrode of the detector is prepared by the detector electrode manufacturing method of any one of the above.

[0059] The detector provided by this application, in which the electrodes are prepared by the electrode manufacturing method described above. The detector can achieve very precise electrode patterning on the wafer through photoresist and electroplating techniques, ensuring consistent electrode thickness, enhancing the sensitivity and response characteristics of the detector; the high-quality electroplated layer provides excellent electrical conductivity, reduces the resistance of the electrodes, and improves the signal transmission efficiency and response speed of the detector; the electrodes formed by the seed metal layer and electroplating process have good adhesion, can maintain a stable structure during use, and are not easily detached or damaged; the uniformity and quality of the electrode electroplated layer help to improve heat conduction, enabling the heat generated during the operation of the detector to be dissipated more effectively, ensuring the stability and reliability of the device.

[0060] Specifically, in the above embodiment, the detector includes a substrate and electrodes; the substrate is prepared from a wafer, and the substrate is made of InP and InGaAs materials; the electrodes are disposed on the surface of the substrate and include a seed metal layer 4 and a thickened electroplating disposed on the seed metal layer.

[0061] In this embodiment, the substrate made of InP (indium phosphide) and InGaAs (indium gallium arsenide) materials is combined with the electrodes formed by the seed metal layer and electroplating for the design of the detector. Considering that InP and InGaAs materials have excellent optoelectronic properties in the infrared and near-infrared bands, can efficiently absorb photons and generate electron-hole pairs, enabling the detector to exhibit extremely high sensitivity in multiple bands and being suitable for various applications such as optical fiber communication, lidar, and night vision devices; the selective deposition of the seed metal layer and thickened electroplating ensures the formation of high-quality ohmic contacts between the electrodes and the substrate, reduces the contact resistance, and improves the charge transfer efficiency; the seed metal layer, as a transition layer, enhances the adhesion between the thickened electroplating and the substrate, prevents the electrodes from detaching or being damaged during use, and improves the long-term stability and reliability of the detector; the high-quality thickened electroplating and seed metal layer can improve heat conduction, enabling the heat generated during the operation of the detector to be dissipated more effectively, preventing local overheating, and ensuring the stability and reliability of the device.

[0062] In the present invention, the terms "first", "second", and "third" are used only for descriptive purposes and cannot be construed as indicating or implying relative importance; the term "plurality" refers to two or more, unless otherwise clearly defined. Terms such as "mounted", "connected", "connected to", and "fixed" should all be understood in a broad sense. For example, "connected" can be a fixed connection, a detachable connection, or an integral connection; "connected" can be a direct connection or an indirect connection through an intermediate medium. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0063] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "upper", "lower", "left", "right", "front", "rear", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or unit referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation to the present invention.

[0064] In the description of this specification, the description of terms such as "one embodiment", "some embodiments", "specific embodiments", etc. means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or instance. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0065] Obviously, those skilled in the art can make various modifications and variations to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalent technologies, the present invention also intends to include these modifications and variations.

Claims

1. A method for fabricating a detector electrode, characterized in that Comprising: Evaporating a seed metal layer on the wafer surface; After spin-coating a photoresist on the seed metal layer, performing photolithography to expose the electrode area to be electroplated and determine the electroplating point area; Performing plasma cleaning on the electrode area after photolithography, electroplating and thickening the electrode area based on the electroplating point area, and stripping the photoresist after completing the electroplating and thickening to form an electrode.

2. The method according to claim 1, wherein The evaporating a seed metal layer on the wafer surface comprises: After spin-coating a first photoresist layer on the wafer surface, performing photolithography to form an electrode window above the wafer surface, and retaining the first photoresist layer except for the electrode window and the electroplating point area, wherein the electrode window is used to determine the position and shape of the electrode area; Evaporating a seed metal layer on the surface of the retained first photoresist layer and the area exposed by the electrode window.

3. The method according to claim 2, wherein The performing photolithography after spin-coating the first photoresist layer on the wafer surface comprises: The first photoresist layer of the electrode window is trapezoidal after development.

4. The method according to claim 1, wherein The performing photolithography after spin-coating a photoresist on the seed metal layer to expose the electrode area to be electroplated and determine the electroplating point area comprises: After spin-coating a second photoresist layer on the seed metal layer, performing photolithography. After exposing and developing the second photoresist layer, the electrode area to be electroplated and the electroplating point area are exposed to the external environment, and a protective layer is formed on the non-electroplating area except for the electrode area and the electroplating point area by using the second photoresist layer.

5. The method according to claim 1, characterized in that, The number of the electroplating point areas is multiple, and the multiple electroplating point areas are distributed in the arc or flat edge area of the wafer edge.

6. The method according to claim 1, wherein The electroplating and thickening the electrode area based on the electroplating point area comprises: Applying an electroplating current based on the electroplating point area, and electroplating and thickening the electrode area on the seed metal layer through the seed metal layer.

7. The method according to claim 6, wherein The current value of the electroplating current is the product of the effective area of the electrode area and the preset current density of the electroplating solution.

8. The method according to claim 1, characterized in that The stripping the photoresist after completing the electroplating and thickening to form an electrode comprises: Retaining the seed metal layer in the electrode area and the thickened electroplating on the seed metal layer, and stripping the seed metal layer and the photoresist on the wafer except for the electrode area after completing the electroplating and thickening to form an electrode.

9. A detector, characterized in that, The electrode of the detector is prepared by the method for manufacturing a detector electrode according to any one of claims 1 to 8.

10. The detector according to claim 9, characterized in that, Comprising: a substrate and the electrode; The substrate is prepared from the wafer, and the substrate is made of InP and InGaAs materials; The electrode is disposed on the surface of the substrate, and comprises the seed metal layer and the thickened electroplating disposed on the seed metal layer.

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