Etching method, etching device and solar cell assembly

Abstract

Embodiments of the present invention disclose an etching method, etching device, and solar cell module. The etching method includes: controlling the spot overlap rate to be less than a preset overlap rate; generating a laser with preset performance parameters; shaping the laser into a rectangular flat-top beam; focusing the rectangular flat-top beam into a spot of preset size, and etching the perovskite functional layer in the cell to be etched according to the spot overlap rate. The technical solution of the embodiment of the present invention provides an etching method that uses point contact etching of the perovskite functional layer. The laser beam uses a rectangular flat-top beam, with each pulse acting independently on the film layer. Single-pulse etching of the perovskite functional layer in the cell to be etched is performed, avoiding heat accumulation in the area where the light pulses overlap, which is more conducive to electrode deposition.

Description

Technical Field

[0001] The present invention relates to the technical field of solar cells, and in particular to an etching method, an etching device and a solar cell assembly. Background Art

[0002] The production of perovskite solar cell modules requires three parallel laser scribing processes to divide the entire cell into several sub-cells connected in series. A final laser edge cleaning process is also required to remove the conductive deposited film at the edge of the cell. The first process, P1, uses a laser to scribe the transparent conductive bottom electrode on the glass substrate before depositing the transmission layer, making it a separate area. The second process, P2, laser scribing the perovskite light-absorbing layer on the transparent conductive bottom electrode exposes the transparent conductive bottom electrode without damage. The third process, P3, after the top electrode is fabricated, uses a laser to scribe the electrode layer, transmission layer, and perovskite light-absorbing layer above the transparent conductive bottom electrode, forming a structure in which the sub-cells are independent and connected in series through the upper and lower electrode layers. The second process, P2, can be etched using different types of lasers, using solid-state or gas lasers with different pulse widths and wavelengths, resulting in different morphologies of the grooves formed. Optimizing the second process, P2, can reduce the additional series resistance introduced by the second process, P2, etching, and improve the fill factor of large-area modules.

[0003] In the existing technology, the etching method of the second process P2 adopts a 400-600nm solid laser, and the pulse width can be nanoseconds, picoseconds or femtoseconds; setting a suitable repetition frequency (the number of pulses triggered per unit time), linear speed and single pulse energy, and etching the perovskite functional layer by Gaussian beam superposition, can achieve etching grooves with a high pulse overlap rate; ensuring the cleanliness of the etched grooves, etching and removing all functional layers above the transparent conductive bottom electrode, completely retaining the surface morphology of the bottom electrode, ensuring that the deposited top electrode is interconnected with the bottom electrode in the groove, forming a series channel between the sub-cells; the contact area of ​​the grooves formed by the bottom electrode and the top electrode through the second process P2 etching must meet the transmission of the photogenerated current inside the component, ensuring that no additional series resistance is added, preventing the loss of effective current, and affecting the performance of the component.

[0004] However, existing technologies use nanosecond, picosecond, or femtosecond lasers to generate Gaussian beams for etching. The energy density at the center of the Gaussian beam is significantly higher than that at the edge. The grooves formed by Gaussian beam etching have a certain taper. The thicker the film to be etched, the more pronounced the taper. While ensuring that the bottom electrode in the center of the groove is not damaged, the edges of the groove may have some residual material due to insufficient power density, resulting in the inability to form an effective ohmic contact. Furthermore, to ensure the smoothness of the groove edges, a relatively high pulse overlap ratio is used. However, a high pulse overlap ratio means heat accumulation, which can lead to the formation of melted and recondensed areas and micron-scale craters at the edges of the grooves. This in turn affects the uniformity of the subsequent top electrode preparation, causes local shunts, and increases additional series resistance. Summary of the Invention

[0005] The present invention provides an etching method, an etching device and a solar cell assembly to solve the problem of heat accumulation in the overlapping area of ​​light pulses, which in turn affects the subsequent preparation of electrodes and increases additional series resistance.

[0006] According to one aspect of the present invention, there is provided an etching method, the etching method comprising the steps of:

[0007] Control the spot overlap rate to be less than the preset overlap rate;

[0008] Generate laser light with preset performance parameters;

[0009] Shape the laser into a rectangular flat top light;

[0010] The rectangular flat-top light is focused into a light spot of preset size, and the perovskite functional layer in the cell to be etched is etched according to the light spot overlap rate.

[0011] Optionally, after focusing the rectangular flat-top light into a light spot of a preset size and etching the perovskite functional layer in the cell to be etched according to the light spot overlap rate, the method includes:

[0012] Grooves with preset intervals are formed in the perovskite functional layer.

[0013] Optionally, the control module controls the light spot overlap rate to be less than a preset overlap rate, including:

[0014] Determine the minimum electrode contact area based on the minimum electrode width and the length of a single sub-cell;

[0015] The number of pulses required to determine the length of a single sub-cell is determined based on the minimum electrode contact area;

[0016] Adjust the spot repetition frequency and linear speed so that the number of pulses is less than the preset number of pulses;

[0017] The spot overlap rate is determined according to the spot repetition frequency and linear speed that make the number of pulses less than the preset number of pulses.

[0018] Optionally, the cell to be etched includes a bottom electrode and a perovskite functional layer stacked in sequence; and the number of pulses required to determine the length of a single sub-cell according to the minimum electrode contact area includes:

[0019] Determine the width of the bottom electrode exposed after the light spot acts on the perovskite functional layer;

[0020] The number of pulses required for the length of a single subcell is determined by the ratio of the minimum electrode contact area to the square of the width of the exposed bottom electrode.

[0021] Optionally, after generating the laser with preset performance parameters, the method further includes:

[0022] Correct and filter the laser.

[0023] Optionally, the perovskite functional layer includes a first transmission layer, a first passivation modification layer, a perovskite absorption layer, a second transmission layer and a second passivation modification layer stacked in sequence; or, the perovskite functional layer includes a first transmission layer, a perovskite absorption layer and a second transmission layer stacked in sequence.

[0024] Optionally, the groove formed by etching is the second groove of the perovskite component; the perovskite component is provided with a plurality of first grooves, a plurality of second grooves and a plurality of third grooves along the first direction; the second groove includes a plurality of sub-grooves with preset intervals.

[0025] According to another aspect of the present invention, an etching device is provided, which is used to perform the above-mentioned etching method, and the etching device includes:

[0026] A control module, used for controlling the light spot overlap rate to be less than a preset overlap rate;

[0027] A laser generation module, used to generate lasers with preset performance parameters;

[0028] A shaping module, used to shape the laser into a rectangular flat top light;

[0029] The focusing module is used to focus the rectangular flat-top light into a light spot of preset size, and etches the perovskite functional layer in the cell to be etched according to the light spot overlap rate.

[0030] Optionally, the control module includes:

[0031] A minimum electrode contact area determination unit, used to determine the minimum electrode contact area according to the minimum electrode width and the length of a single sub-battery;

[0032] A pulse number determination unit, used to determine the number of pulses required for the length of a single sub-battery according to the minimum electrode contact area;

[0033] An adjustment unit, used for adjusting the spot repetition frequency and linear speed so that the number of pulses is less than a preset number of pulses;

[0034] The light spot overlap ratio determining unit is used to determine the light spot overlap ratio according to the light spot repetition frequency and linear speed that make the number of pulses less than the preset number of pulses.

[0035] Optionally, the etching device further includes: an optical path correction module; the optical path correction module is located between the laser generation module and the shaping module;

[0036] The optical path correction module is used to correct and filter the laser.

[0037] Optionally, the optical path correction module includes a beam expander and an aperture; the beam expander is located between the laser generating module and the aperture; the aperture is located between the beam expander and the shaping module;

[0038] The beam expander is used to correct the laser with a divergent angle generated by the laser generating module;

[0039] The aperture is used to filter the corrected laser and transmit it to the shaping module.

[0040] Optionally, the shaping module includes a shaping unit and a light spot analysis unit; the shaping unit is located between the aperture and the focusing module;

[0041] The shaping unit is used to shape the laser into a rectangular flat top light;

[0042] The light spot analysis unit is used to detect the light spot shape and energy density distribution of the rectangular flat top light.

[0043] Optionally, the focusing module includes a reflection unit and a focusing unit;

[0044] The reflecting unit is used to guide the rectangular flat top light into the focusing unit;

[0045] The focusing unit is used to focus the rectangular flat top light into a light spot of a preset size.

[0046] Optionally, the battery to be etched is provided with a plurality of first grooves along a first direction;

[0047] The etching device further includes: a visual positioning module; the visual positioning module is connected to the control module; the visual positioning module is used to determine the positioning reference line of the first groove and transmit it to the control module;

[0048] The control module is used to set a compensation amount according to the positioning reference line to control the distance from the first groove.

[0049] Optionally, the etching device further includes: a dust collection module;

[0050] The dust collection module is used to absorb the decomposition particles generated during the etching process.

[0051] According to another aspect of the present invention, a solar cell assembly is provided, which is formed by applying the above-mentioned etching method; the solar cell assembly includes a plurality of battery cells; the battery cells include a bottom electrode layer, a perovskite functional layer, and a top electrode layer stacked in sequence;

[0052] The solar cell assembly is provided with a plurality of first grooves, a plurality of second grooves and a plurality of third grooves along a first direction; the solar cell assembly is divided into a plurality of battery cells connected in series in sequence by the plurality of first grooves, the plurality of second grooves and the plurality of third grooves;

[0053] The first groove passes through the bottom electrode layer; the second groove includes a plurality of sub-grooves, and the plurality of sub-grooves are arranged along the second direction according to a preset spacing; the sub-grooves pass through the perovskite functional layer; the third groove passes through the top electrode layer and the perovskite functional layer.

[0054] The technical solution of the embodiment of the present invention is to set up an etching method, adopt point contact etching of the perovskite functional layer, and adopt rectangular flat top light as the laser beam. Each pulse acts on the film layer independently, and there is a certain spacing between the pulses. By determining the size of the line groove formed by a single pulse and the spacing between adjacent pulses, it is ensured that the top electrode has sufficient contact area with the bottom electrode through the etched line groove; a high-quality flat top light spot is applied, which has the characteristics of high uniformity, high light efficiency and steep edges. The line groove formed is discontinuous, and the line groove formed by each pulse has a certain spacing; the rectangular flat top light beam is used to act on the surface of the film layer, and the edge of the line groove formed is consistent with the effect of the middle area. When the energy of a single pulse reaches the ablation threshold of the perovskite functional layer, a rectangular line groove with steep edges can be formed, and the bottom electrode can be completely exposed. The etching method of the embodiment of the present invention is applied to point contact etching of the line groove, and there is a certain spacing between adjacent pulses. The perovskite functional layer is retained at the spacing, which is more conducive to heat conduction, avoids heat accumulation, and reduces the melting protrusion at the edge. Furthermore, compared to full grooves, this method for point-contact groove etching offers the advantage of zero pulse overlap. This allows for higher processing speeds at a fixed repetition rate, improving the efficiency of solar cell module processing. Furthermore, since there is no interaction between pulses, process optimization only requires focusing on the single-pulse energy and spot shape of the beam, reducing debugging difficulty. Furthermore, while ensuring effective contact area between the top and bottom electrodes and without adding additional series resistance, the groove size formed by a single pulse and the spacing between adjacent pulses can be determined.

[0055] It should be understood that the content described in this section is not intended to identify the key or important features of the embodiments of the present invention, nor is it intended to limit the scope of the present invention. Other features of the present invention will become readily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0056] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0057] Figure 1 is a flow chart of an etching method provided according to an embodiment of the present invention;

[0058] Figure 2 is a flow chart of another etching method provided according to an embodiment of the present invention;

[0059] Figure 3 is a schematic diagram of changes in fill factors corresponding to different wire slot widths provided according to an embodiment of the present invention;

[0060] Figure 4 is a schematic diagram of changes in photoelectric conversion efficiency corresponding to different slot widths provided by an embodiment of the present invention;

[0061] Figure 5 This is a schematic diagram of a special-shaped structure formed by discontinuous etching in the second step according to an embodiment of the present invention;

[0062] Figure 6 Schematic diagram of another special-shaped structure formed by discontinuous etching in the second step according to an embodiment of the present invention;

[0063] Figure 7 According to an embodiment of the present invention, Figure 5 Schematic diagram of electron microscopy corresponding to P3 in the structure shown;

[0064] Figure 8 According to an embodiment of the present invention, Figure 5 Schematic diagram of electron microscopy corresponding to P2 in the structure shown;

[0065] Figure 9 is a structural schematic diagram of an etching device provided according to an embodiment of the present invention;

[0066] Figure 10 is a structural diagram of a control module in an etching device provided in an embodiment of the present invention;

[0067] Figure 11is a schematic structural diagram of another etching device provided according to an embodiment of the present invention;

[0068] Figure 12 is a schematic structural diagram of a solar cell assembly provided according to an embodiment of the present invention;

[0069] Figure 13 3 is a schematic structural diagram of a solar cell assembly after the second process is completed according to an embodiment of the present invention. DETAILED DESCRIPTION

[0070] In order to enable those skilled in the art to better understand the solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts should fall within the scope of protection of the present invention.

[0071] It should be noted that the terms "first", "second", etc. in the description and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that the numbers used in this way can be interchanged where appropriate so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0072] Figure 1 This is a flow chart of an etching method provided according to an embodiment of the present invention. This embodiment is applicable to etching the perovskite functional layer in the battery to be etched. The etching method can be performed by an etching device, which can be implemented in the form of hardware and / or software. Figure 1 As shown, the etching method includes:

[0073] S110 , controlling the light spot overlap ratio to be less than a preset overlap ratio.

[0074] Specifically, during the laser scribing of the film layer, the high overlap rate of the light spots forms complete linear grooves with smooth edges. The light spot overlap rate can be expressed by the following formula: O=1-(V / F•D); wherein O represents the light spot overlap rate; V represents the processing linear speed in mm / s; F represents the repetition frequency used in KHz; and D represents the focused light spot diameter in μm. When circular Gaussian light is conventionally used for scribing, the light spot overlap rate O needs to be ≥0.6 to achieve complete linear groove scribing. However, in an embodiment of the present invention, a certain spacing is required between laser pulses, and then the light spot overlap rate O needs to be controlled to be less than zero. The preset overlap rate is a pre-set maximum value of the light spot overlap rate that meets the scribing requirements. Exemplarily, the preset overlap rate is 0. The application control module controls the light spot overlap rate to be less than zero.

[0075] S120: Generate laser light with preset performance parameters.

[0076] Specifically, a laser can be used to generate laser light. The preset performance parameters are the performance parameters of the laser generated by the laser that are preset. The performance parameters may include wavelength range, frequency range, and pulse width. For example, the embodiment of the present invention may use a picosecond laser with a wavelength of 400-800nm, a frequency range of 20-1000KHz, a pulse width of less than 10 picoseconds, and a beam quality M. 2 ≤1.3, roundness, near-field roundness and far-field roundness must all be ≥95%, and laser power must be greater than 30W&50KHz.

[0077] In an optional embodiment of the present invention, after S120, generating laser light with preset performance parameters, the method further includes: correcting and filtering the laser light.

[0078] Specifically, a collimating lens and a combination of an adjustable magnification beam expander and an aperture can be used to correct and filter the laser. The collimating lens is based on the transformation principle of the lens combination. By cooperating with lenses of different focal lengths and different types, the light beam is refracted and transformed multiple times, which can achieve precise control of parameters such as the beam waist radius or divergence angle, thereby obtaining a high-quality collimated beam. Through the above operations, the laser output with a small divergence angle can be corrected to make the laser more collimated, the divergence angle smaller, and the error reduced. It is also possible to filter stray light, optimize the spot pattern, improve the quality of the spot after shaping and focusing, and avoid the influence of non-required energy on the film layer.

[0079] S130, shaping the laser into a rectangular flat-top light.

[0080] Specifically, after correction and filtering, the laser beam quality and spot size can meet the incident requirements. A shaping lens can be used to shape the corrected and filtered laser into a rectangular flat-top beam. The angle between the shaping lens and the incident light needs to be continuously adjusted. The spot incident on the shaping lens can be shaped from a circular Gaussian beam to a rectangular flat-top beam.

[0081] S140, focusing the rectangular flat-top light into a light spot of a preset size, and etching the perovskite functional layer in the cell to be etched according to the light spot overlap rate.

[0082] Specifically, the shaped rectangular flat-top light is incident on the focusing module, which focuses the rectangular flat-top light into a light spot of a preset size, and etches the perovskite functional layer in the cell to be etched according to the light spot overlap rate.

[0083] The technical solution of the embodiment of the present invention is to set up an etching method, adopt point contact etching of the perovskite functional layer, and adopt rectangular flat top light as the laser beam. Each pulse acts on the film layer independently, and there is a certain spacing between the pulses. By determining the size of the line groove formed by a single pulse and the spacing between adjacent pulses, it is ensured that the top electrode has sufficient contact area with the bottom electrode through the etched line groove; a high-quality flat top light spot is applied, which has the characteristics of high uniformity, high light efficiency and steep edges. The line groove formed is discontinuous, and the line groove formed by each pulse has a certain spacing; the rectangular flat top light beam is used to act on the surface of the film layer, and the edge of the line groove formed is consistent with the effect of the middle area. When the energy of a single pulse reaches the ablation threshold of the perovskite functional layer, a rectangular line groove with steep edges can be formed, and the bottom electrode can be completely exposed. The etching method of the embodiment of the present invention is applied to point contact etching of the line groove, and there is a certain spacing between adjacent pulses. The perovskite functional layer is retained at the spacing, which is more conducive to heat conduction, avoids heat accumulation, and reduces the melting protrusion at the edge. Furthermore, compared to full grooves, this method for point-contact groove etching offers the advantage of zero pulse overlap. This allows for higher processing speeds at a fixed repetition rate, improving the efficiency of solar cell module processing. Furthermore, since there is no interaction between pulses, process optimization only requires focusing on the single-pulse energy and spot shape of the beam, reducing debugging difficulty. Furthermore, while ensuring effective contact area between the top and bottom electrodes and without adding additional series resistance, the groove size formed by a single pulse and the spacing between adjacent pulses can be determined.

[0084] In an optional embodiment of the present invention, after focusing the rectangular flat-top light into a light spot of a preset size and etching the perovskite functional layer in the cell to be etched according to the light spot overlap rate, it includes: forming grooves with preset intervals in the perovskite functional layer.

[0085] Specifically, point contact etching grooves are used, with a certain spacing between adjacent pulses. The perovskite functional layer is retained at the spacing to form grooves with preset intervals. Compared with complete grooves, this is more conducive to heat conduction, avoids heat accumulation, and reduces the melting protrusion at the edge.

[0086] Figure 2 This is a flow chart of another etching method provided according to an embodiment of the present invention. This embodiment is a detailed description of some technical features of the above embodiment. Figure 2 As shown, the etching method includes:

[0087] S210 : Determine a minimum electrode contact area according to the minimum electrode width and the length of a single sub-battery.

[0088] Specifically, the minimum electrode width is represented by Wmin, the length of a single subcell is represented by L, and the minimum electrode contact area is represented by Smin. The specific spacing between pulses requires simulation to determine the minimum contact area between the bottom and top electrodes that does not affect component performance. First, a complete continuous line groove engraving method is used to simulate the line width gradient of the line groove to be etched. By replacing focusing lenses of different specifications or adjusting the magnification of the beam expander, different sizes of focused light spots can be achieved. The line width is based on the width W of the completely exposed bottom electrode. The length L of a single sub-cell is set to be much lower than the conventional line groove width W1. The line groove width is increased in a gradient of 1 micron step, which can be expressed as: W1, W2, W3, W4...Wn, Wn+1, Wn+2, Wn+3 respectively; the contact area S between the bottom electrode and the top electrode of a single sub-cell is L*W1, L*W2, L*W3, L*W4...L*Wn, L*Wn+1, L*Wn+2, L*Wn+3 respectively; then, for the performance of components with different electrode contact areas, the corresponding open circuit voltage, short circuit current, fill factor (FF) and power conversion efficiency (PCE) can be paid attention to. Figure 3 2 is a schematic diagram of changes in fill factors corresponding to different slot widths provided according to an embodiment of the present invention. Figure 4 Schematic diagram of the change of photoelectric conversion efficiency corresponding to different slot widths provided by an embodiment of the present invention. Figure 3 and Figure 4 When the width W of the completely exposed bottom electrode is less than the minimum electrode width Wmin, the component performance parameters such as FF and PCE all show an upward trend with the increase of line width; when the width W of the completely exposed bottom electrode is greater than or equal to the minimum electrode width Wmin, the component performance parameters such as FF and PCE tend to be stable and fluctuate within a smaller range; the minimum electrode contact area that does not affect the component performance is Smin=L*Wmin, and the minimum electrode contact area is determined accordingly.

[0089] S220 , determining the number of pulses required for the length of a single sub-battery according to the minimum electrode contact area.

[0090] In other optional embodiments of the present invention, the battery to be etched includes a bottom electrode and a perovskite functional layer stacked in sequence; the number of pulses required for the length of a single sub-battery is determined based on the minimum electrode contact area, including: determining the width of the bottom electrode exposed after the light spot acts on the perovskite functional layer; and determining the number of pulses required for the length of a single sub-battery based on the ratio of the minimum electrode contact area to the square of the width of the exposed bottom electrode.

[0091] Specifically, based on the width w of the bottom electrode exposed by the rectangular flat-top light spot on the perovskite functional layer, the number of pulses N=Smin / w² required for the length L of a single sub-cell can be simulated.

[0092] S230 , adjusting the light spot repetition frequency and the linear speed so that the number of pulses is less than the preset number of pulses.

[0093] Specifically, when the overlap rate of the rectangular flat-top spot is 0, the slots formed by adjacent pulses are adjacent but do not overlap. The number of pulses in this case is represented by N1, which is the preset number of pulses, and N1 = L / w. To control the spot overlap rate to be less than zero, the repetition frequency F and the processing line speed V need to be adjusted to meet N < N1. The expression for the repetition frequency F is: F = N / 1000V*L; where the repetition frequency F is in kHz, N is the number of pulses required for a single sub-cell length L, V is the processing line speed, and L is the length of a single sub-cell.

[0094] S240 , determining a light spot overlap rate according to a light spot repetition frequency and a linear velocity that make the number of pulses smaller than a preset number of pulses.

[0095] Specifically, the corresponding processing line speed V and repetition frequency F were determined. The ablation threshold of the perovskite functional layer can be confirmed through the single-pulse energy gradient, and then the optimal single-pulse energy is matched according to the electron microscope effect (such as removing the perovskite functional layer to expose the bottom electrode without damaging the bottom electrode, and avoiding melting of the edge of the wire groove). In this way, a point-etched wire groove can be formed. When the top electrode is further deposited and prepared, point contact can be formed on the wire groove to ensure the overall structure of the wire groove, avoiding the formation of poor electrode contact due to uneven external force on the local wire groove during the lamination and packaging stage, introducing additional series resistance, and affecting component performance.

[0096] S250: Generate laser light with preset performance parameters.

[0097] S260, shaping the laser into a rectangular flat top light.

[0098] S270, focusing the rectangular flat-top light into a light spot of a preset size, and etching the perovskite functional layer in the cell to be etched according to the light spot overlap rate.

[0099] Figure 5 This is a schematic diagram of a special-shaped structure formed by discontinuous etching in the second step according to an embodiment of the present invention. Figure 6 Schematic diagram of another special-shaped structure formed by discontinuous etching in the second step according to an embodiment of the present invention. Figure 5 and Figure 6 , including a first linear groove 901, a second linear groove 902, and a third linear groove 903. The first linear groove 901 is formed by etching in the first process P1, the second linear groove 902 is formed by etching in the second process P2, and the third linear groove 903 is formed by etching in the third process P3. The discontinuous etching in the second process P2 can be achieved by etching in the first process P1 or the third process P3 in a special shape, further reducing the dead zone ratio, improving the geometric fill factor, and increasing the effective power generation of the solar cell module. During the second process P2 etching, discontinuous and equally spaced linear grooves are etched in the perovskite functional layer through discontinuous point etching. The linear grooves can be of different sizes and shapes, such as circular or square. The control module 10 then determines the effective contact area formed by a single laser pulse and the spacing between pulses, thereby achieving maximum power output without affecting the photoelectric conversion efficiency of the solar cell module while further improving the geometric fill factor of the solar cell module.

[0100] Figure 7 According to an embodiment of the present invention, Figure 5 Schematic diagram of the electron microscope corresponding to P3 in the structure shown. Figure 8 According to an embodiment of the present invention, Figure 5 Schematic diagram of the electron microscope corresponding to P2 in the structure shown. Figure 7 This is an image with a magnification of X200. Figure 8 This is the image when the magnification is X100. Figure 7 and Figure 8 To further improve the geometric fill factor of the special-shaped structures in the above-mentioned invention embodiments, discontinuous etching in the second process P2 can be achieved by editing line segments of different lengths to form the second process P2 line grooves, or by controlling the laser on / off light time interval by the control module to achieve line segmentation. This method requires a high degree of coordination between the mechanical and laser and software visual positioning to achieve uniform and specific length second process P2 line segments. The point etching method of the embodiment of the present invention can achieve second process P2 points or line segments of different spacing and lengths by setting the processing line speed, repetition frequency and focus spot size and utilizing the laser pulse emission characteristics.

[0101] In an optional embodiment of the present invention, the perovskite functional layer includes a first transmission layer, a first passivation modification layer, a perovskite absorption layer, a second transmission layer and a second passivation modification layer stacked in sequence; or, the perovskite functional layer includes a first transmission layer, a perovskite absorption layer and a second transmission layer stacked in sequence.

[0102] In an optional embodiment of the present invention, the groove formed by etching is the second groove of the perovskite component; the perovskite component is provided with a plurality of first grooves, a plurality of second grooves and a plurality of third grooves along the first direction; the second groove includes a plurality of sub-grooves with preset intervals.

[0103] Specifically, point contact etching grooves are used, with a certain spacing between adjacent pulses. The perovskite functional layer is retained at the spacing to form a second groove including multiple sub-grooves with preset intervals. Compared with forming a complete groove, it is more conducive to heat conduction, avoids heat accumulation, and reduces the melting protrusion at the edge.

[0104] Figure 9 FIG. 1 is a schematic structural diagram of an etching device provided according to an embodiment of the present invention. Figure 9 As shown, the etching device is used to perform the etching method of any embodiment of the present invention, and the etching device includes: a control module 10, used to control the spot overlap rate to be less than a preset overlap rate; a laser generation module 20, used to generate a laser with preset performance parameters; a shaping module 40, used to shape the laser into a rectangular flat-top light; a focusing module 50, used to focus the rectangular flat-top light into a spot of a preset size, and etch the perovskite functional layer in the battery to be etched according to the spot overlap rate.

[0105] In an optional embodiment of the present invention, reference Figure 9 The etching device further includes: an optical path correction module 30, which is located between the laser generating module 20 and the shaping module 40; the optical path correction module 30 is used to correct and filter the laser.

[0106] In the embodiment of the present invention, the laser generating module 20 includes but is not limited to a laser. The preset performance parameters are the performance parameters of the laser generated by the laser generating module 20 that are preset. The performance parameters may include wavelength range, frequency range, and pulse width, etc. For example, the embodiment of the present invention may use a picosecond laser with a wavelength of 400-800nm, a frequency range of 20-1000KHz, a pulse width of less than 10 picoseconds, and a beam quality M. 2≤1.3, the roundness, near-field roundness and far-field roundness must all be ≥95%, and the laser power must be greater than 30W&50KHz. The beam quality of the laser and the roundness of the spot affect the quality of the flat-top spot after passing through the shaping module 40. The control module 10 controls the light output of the laser generation module 20 to be incident on the optical path correction module 30. The optical path correction module 30 corrects and filters the received laser. The optical path correction module 30 can correct the laser with a small divergence angle output by the laser generation module 20, so that the collimation of the laser generation module 20 is higher, the divergence angle is smaller, and the error is reduced. The optical path correction module 30 can also filter stray light, optimize the spot pattern, improve the quality of the spot after shaping and focusing, and avoid the influence of non-required energy on the film layer. The optical path correction module 30 includes but is not limited to a combination of a collimating lens and an adjustable magnification beam expander and an aperture. Collimating lenses are based on the transformation principle of lens combination. By cooperating with lenses of different focal lengths and types to refract and transform the light beam multiple times, it can achieve precise control of parameters such as the beam waist radius or divergence angle, thereby obtaining a high-quality collimated beam.

[0107] After passing through the optical path correction module 30, the laser beam quality and spot size meet the incident requirements of the shaping module 40. The angle between the shaping module 40 and the incident light needs to be continuously adjusted, and the spot of the incident shaping module 40 can be shaped from a circular Gaussian beam to a rectangular flat-top beam. The shaped rectangular flat-top beam is then incident on the focusing module 50, which focuses the rectangular flat-top beam into a spot of a preset size. Based on the spot overlap ratio, the perovskite functional layer in the solar cell module is etched. For example, during laser scribing of the film layer, the high spot overlap ratio forms a complete, smooth-edged linear groove. The spot overlap ratio can be expressed as follows: O = 1 - (V / F·D); where O represents the spot overlap ratio; V represents the processing line speed in mm / s; F represents the repetition rate in kHz; and D represents the focused spot diameter in μm. When using conventional circular Gaussian laser scribing, the spot overlap ratio O needs to be ≥ 0.6 to achieve complete linear groove scribing. However, in the embodiment of the present invention, a certain spacing is required between laser pulses, so the spot overlap rate O needs to be controlled to be less than zero. The preset overlap rate is a preset maximum value of the spot overlap rate that meets the scribing requirements. For example, the preset overlap rate is 0. The application control module 10 controls the spot overlap rate to be less than zero. The specific process is as follows:

[0108] (1) The specific spacing between pulses requires simulating the minimum contact area between the bottom electrode and the top electrode that does not affect the performance of the component. First, a complete continuous line groove engraving method is used to simulate the line width gradient of the line groove to be etched. By replacing the focusing objective lens of different specifications or adjusting the beam expander magnification, different sizes of focused spots can be achieved. The line width is based on the width W of the completely exposed bottom electrode. The length L of the single sub-cell is set to be much lower than the conventional line groove width W1. The line groove width is increased in a gradient of 1 micron. They can be expressed as: W1, W2, W3, W4...Wn, Wn+1, Wn+2, Wn+3; then the contact area S between the bottom electrode and the top electrode of the single sub-cell is L*W1, L*W2, L*W3, L*W4...L*Wn, L*Wn+1, L*Wn+2, L*Wn+3 respectively; then for the performance of components with different electrode contact areas, we can pay attention to the corresponding open circuit voltage, short circuit current, fill factor (FF) and power conversion efficiency (PCE). Figure 3 and Figure 4 As shown in the figure, when the fully exposed bottom electrode width W is less than Wmin, module performance parameters such as FF and PCE increase with increasing line width. When the fully exposed bottom electrode width W is greater than or equal to Wmin, module performance parameters such as FF and PCE remain stable and fluctuate within a small range. The minimum electrode contact area that does not affect module performance is Smin = L*Wmin, which determines the minimum electrode contact area. Top electrode materials include but are not limited to metals or metal conductive oxides, such as copper, silver, gold, indium tin oxide, fluorine-doped tin oxide, indium zinc oxide, carbon paste, or a combination of these. Top electrode fabrication methods include but are not limited to sputtering deposition, evaporation, plasma deposition, screen printing, and atomic layer deposition. Different top electrodes have different conductive properties and interface contacts. Under the same series resistance, the minimum electrode contact area also varies. Therefore, for different top electrodes, simulating the minimum line width that meets module performance and then determining the minimum electrode contact area can minimize the dead zone ratio, increase the module's effective power generation area, and further improve the geometric fill factor.

[0109] (2) According to the width w of the bottom electrode exposed by the rectangular flat-top light spot on the perovskite functional layer, the number of pulses N=Smin / w² required for the length L of a single sub-cell can be simulated; when the overlap rate of the rectangular flat-top light spot is equal to 0, the line slots formed by adjacent pulses are just adjacent but do not overlap. In this case, the number of pulses is represented by N1, and N1=L / w; to control the spot overlap rate to be less than zero, it is necessary to adjust the repetition frequency F and the processing line speed V to meet N<N1. The expression of the repetition frequency F is: F=N / 1000V*L; where the unit of the repetition frequency F is KHz, N is the number of pulses required for a single sub-cell length L, V is the processing line speed, and L is the length of a single sub-cell; after determining the corresponding processing line speed V and repetition frequency F, the ablation threshold of the perovskite functional layer can be confirmed through the single-pulse energy gradient, and then the optimal single-pulse energy can be matched according to the electron microscope effect (such as removing the perovskite functional layer to expose the bottom electrode without damaging the bottom electrode, and avoiding melting of the edge of the wire groove). In this way, a point-etched wire groove can be formed. When the top electrode is further deposited and prepared, point contact can be formed on the wire groove to ensure the overall structure of the wire groove, avoiding the formation of poor electrode contact due to uneven external force on the local wire groove during the lamination and packaging stage, introducing additional series resistance, and affecting component performance.

[0110] The technical solution of the embodiment of the present invention is to set up an etching device, use point contact etching to etch the perovskite functional layer, and use a rectangular flat top laser beam. Each pulse acts on the film layer independently, and there is a certain spacing between the pulses. By determining the size of the line groove formed by a single pulse and the spacing between adjacent pulses, it is ensured that the top electrode has sufficient contact area with the bottom electrode through the etched line groove; a high-quality flat top spot is used, which has the characteristics of high uniformity, high light efficiency and steep edges. The line grooves formed are discontinuous, and the line grooves formed by each pulse have a certain spacing; the rectangular flat top light beam is used to act on the surface of the film layer, and the edges of the line grooves formed have the same effect as the middle area. When the energy of a single pulse reaches the ablation threshold of the perovskite functional layer, a rectangular line groove with steep edges can be formed, and the bottom electrode can be completely exposed. The etching device of the embodiment of the present invention is used to etch the line grooves in point contact. There is a certain spacing between adjacent pulses. The perovskite functional layer is retained at the spacing, which is more conducive to heat conduction, avoids heat accumulation, and reduces the melting protrusion at the edge. Compared to full grooves, point-contact groove etching using this etching device offers the advantage of zero pulse overlap. This allows for higher processing speeds at a fixed repetition rate, improving the processing efficiency of solar cell modules. Furthermore, since there is no interaction between pulses, process optimization only requires focusing on the single-pulse energy and spot shape of the beam, reducing debugging difficulty. Furthermore, while ensuring effective contact area between the top and bottom electrodes and without adding additional series resistance, the groove size formed by a single pulse and the spacing between adjacent pulses can be determined.

[0111] Figure 10FIG. 1 is a schematic diagram of the structure of the control module in the etching device provided in an embodiment of the present invention. Figure 10 As shown, in an optional embodiment of the present invention, the control module 10 includes: a minimum electrode contact area determination unit 101, which is used to determine the minimum electrode contact area according to the minimum electrode width and the length of a single sub-cell; a pulse number determination unit 102, which is used to determine the number of pulses required for the length of a single sub-cell according to the minimum electrode contact area; an adjustment unit 103, which is used to adjust the light spot repetition frequency and the linear speed so that the number of pulses is less than the preset number of pulses; and a light spot overlap rate determination unit 104, which is used to determine the light spot overlap rate according to the light spot repetition frequency and the linear speed that make the number of pulses less than the preset number of pulses.

[0112] Figure 11 FIG. 1 is a schematic diagram of another etching device according to an embodiment of the present invention. Figure 11 As shown, optionally, the optical path correction module 30 includes a beam expander 301 and an aperture 302; the beam expander 301 is located between the laser generating module 20 and the aperture 302; the aperture 302 is located between the beam expander 301 and the shaping module 40; the beam expander 301 is used to correct the laser with a divergent angle generated by the laser generating module 20; the aperture 302 is used to filter the corrected laser and transmit it to the shaping module 40.

[0113] In an embodiment of the present invention, the laser generation module 20 may be a laser 211. The optical path correction module 30 includes a combination of an adjustable-magnification beam expander 301 and an aperture 302. The beam expander 301 can correct the laser light with a slight divergence angle output by the laser 211, making the laser 211 more collimated and having a smaller divergence angle. At the same time, the aperture 302 can filter out stray light around the spot, optimize the spot pattern, improve the quality of the spot after shaping and focusing, and avoid the impact of non-required energy on the film layer. After passing through the beam expander 301 and the aperture 302, the laser beam quality and spot size can meet the incident requirements of the shaping module 40.

[0114] Based on the technical solution of the above invention embodiment, Figure 11 Optionally, the shaping module 40 includes a shaping unit 401 and a spot analysis unit 402; the shaping unit 401 is located between the aperture 302 and the focusing module 50; the shaping unit 401 is used to shape the laser into a rectangular flat top light; the spot analysis unit 402 is used to detect the spot shape and energy density distribution of the rectangular flat top light.

[0115] In an embodiment of the present invention, the shaping unit 401 includes but is not limited to a shaping lens and a homogenizing lens. The light spot analysis unit 402 includes but is not limited to a light spot analyzer. The shaping lens is based on the principles of light propagation and refraction and phase modulation. Through a special curved surface design, the circular Gaussian light is refracted and reflected inside the lens, thereby changing the propagation direction and distribution of the light. By modulating the thickness or refractive index of the lens, the light at different positions produces different phase delays after passing through the lens, and the light intensity distribution of the circular Gaussian light can be transformed from a Gaussian distribution with high center and low edge to a uniform rectangular flat-top distribution. The circular Gaussian light corrected and filtered by the optical path correction module 30 is incident on the shaping lens, and the shaping lens shapes the circular Gaussian light into a rectangular flat-top light. At the same time, a light spot analyzer is used after the shaping lens to detect the corresponding light spot shape and energy density distribution to ensure the quality of the rectangular flat-top light.

[0116] Based on the technical solution of the above invention embodiment, Figure 11 Optionally, the focusing module 50 includes a reflecting unit 501 and a focusing unit 502; the reflecting unit 501 is used to introduce the rectangular flat top light into the focusing unit 502; the focusing unit 502 is used to focus the rectangular flat top light into a light spot of a preset size.

[0117] In this embodiment of the present invention, the preset size is a pre-set spot size that meets the spot overlap requirement. Reflection unit 501 includes, but is not limited to, a reflector. Focusing unit 502 includes, but is not limited to, a focusing lens. The shaped rectangular flat-top beam passes through a 45-degree reflector lens, directing the beam into the vertical focusing lens, where it is focused to the corresponding spot size to achieve etching of the perovskite functional layer.

[0118] Based on the technical solution of the above invention embodiment, Figure 11 Optionally, the battery to be etched is provided with a plurality of first grooves 100 along the first direction X; the etching device further comprises: a visual positioning module 60; the visual positioning module 60 is connected to the control module 10; the visual positioning module 60 is used to determine the positioning reference line of the first groove 100 and transmit it to the control module 10; the control module 10 is used to set the compensation amount according to the positioning reference line to control the distance from the first groove 100.

[0119] In this embodiment of the present invention, the visual positioning module 60 includes, but is not limited to, a visual positioning system. A visual positioning system utilizes a visual sensor to acquire image information and, through image processing and analysis techniques, determines the position, posture, and motion state of a target object. The visual positioning system acquires the positioning reference line of the first groove 100 and transmits it to the control module 10. The control module 10 sets a corresponding compensation value based on the positioning reference line of the first groove 100, controls the distance between the groove to be etched and the first groove 100, and reduces the dead zone of the solar cell module.

[0120] Based on the technical solution of the above invention embodiment, Figure 10 Optionally, the etching device further includes: a dust collection module 70; the dust collection module 70 is used to absorb decomposition particles generated during the etching process.

[0121] In the embodiment of the present invention, the dust collection module 70 includes, but is not limited to, a dust collection system such as a vacuum cleaner. The dust collection module 70 employs a wrap-around side suction system, covering a square-shaped, marked area to ensure that generated dust is contained within the suction area. The side suction system also prevents backflow from the air duct, which could cause dust to fall back onto the membrane surface and contaminate the membrane surface.

[0122] The etching device provided in the embodiment of the present invention can execute the etching method provided in any embodiment of the present invention, and has the corresponding functional modules and beneficial effects of the execution method.

[0123] Figure 12 Schematic diagram of the structure of a solar cell module according to an embodiment of the present invention. The solar cell module is formed by the etching method described in any embodiment of the present invention; Figure 12 As shown, the solar cell assembly includes: a plurality of battery cells 80; the battery cell 80 includes a bottom electrode layer 801, a perovskite functional layer 802 and a top electrode layer 803 stacked in sequence; the solar cell assembly is provided with a plurality of first grooves 100, a plurality of second grooves 200 and a plurality of third grooves 300 along a first direction X; the solar cell assembly is divided into a plurality of battery cells 80 connected in series by the plurality of first grooves 100, the plurality of second grooves 200 and the plurality of third grooves 300; the first groove 100 passes through the bottom electrode layer 801; the second groove 200 includes a plurality of sub-grooves 201, and the plurality of sub-grooves 201 are arranged along the second direction Y at a preset interval; the sub-grooves 201 pass through the perovskite functional layer 802; the third groove 300 passes through the top electrode layer 803 and the perovskite functional layer 802.

[0124] In an embodiment of the present invention, the solar cell module further comprises a glass substrate 800. The bottom electrode layer 801 is located on one side of the glass substrate 800. The perovskite functional layer 802 is located on the side of the bottom electrode layer 801 away from the glass substrate 800. The perovskite functional layer 802 comprises a first transmission layer, a first passivation modification layer, a perovskite absorption layer, a second transmission layer, and a second passivation modification layer stacked in sequence. The perovskite functional layer 802 may further comprise an ultraviolet protection layer. The first transmission layer may be a hole transmission layer, and the second transmission layer may be an electron transmission layer. The perovskite functional layer 802 is the core region that absorbs sunlight and generates electron-hole pairs. The top electrode layer 803 is located on the side of the perovskite functional layer 802 away from the bottom electrode layer 801.

[0125] The solar cell module is divided into a plurality of battery cells 80 connected in series by a plurality of first grooves 100, a plurality of second grooves 200, and a plurality of third grooves 300. The formed grooves provide channels for connecting the positive and negative electrodes of adjacent battery cells 80. The first grooves 100 penetrate the bottom electrode layer 801, and the first grooves 100 are filled with the perovskite functional layer 802, which helps to optimize the electric field distribution and carrier transmission path within the battery cell 80. When sunlight irradiates the perovskite functional layer 802, the generated electron-hole pairs can be more efficiently separated and transmitted under the action of the bottom electrode layer 801 and the top electrode layer 803, thereby improving the photoelectric conversion efficiency of the solar cell module.

[0126] The second groove 200 includes multiple sub-grooves 201, and the multiple sub-grooves 201 are arranged along the second direction Y at a preset interval, avoiding heat accumulation in the overlapping area of ​​the light pulses, improving the morphology of the groove, and being more conducive to the deposition of the top electrode layer 803, avoiding the possibility of the thinned top electrode layer 803 being pierced by the crater of the second groove 200.

[0127] It should be noted that during the process of preparing a solar cell module, after the top electrode layer 803 is prepared, whether the sub-grooves 201 are visually visible depends on the preparation process of the top electrode layer 803. Specifically, the visible light transmittance of the top electrode layer 803 affects the visual clarity of the sub-grooves 201. For example, when the visible light transmittance of the top electrode layer 803 is high, the visual clarity of the sub-grooves 201 is also high; when the visible light transmittance of the top electrode layer 803 is low, the visual clarity of the corresponding sub-grooves 201 is also low. Figure 12 The sub-grooves 201 shown are only for reference and are not specifically limited herein.

[0128] Figure 13 1 is a schematic diagram of the structure of a solar cell assembly after completing the second process according to an embodiment of the present invention. Figure 13 As shown, a plurality of first grooves 100 and second grooves 200 are arranged along a first direction X. Along a second direction Y, the second grooves 200 include a plurality of spaced sub-grooves 201. The structure further includes a glass substrate 800, a bottom electrode layer 801 and a perovskite functional layer 802. Figure 13 The partially enlarged portion includes the bottom electrode layer 801 exposed after etching to form the sub-grooves 201, and the perovskite functional layer 802 that has not been etched. Figure 12 , in the formation Figure 13 After the structure shown is formed, the top electrode layer 803 can be formed and the third step can be performed to form the third groove 300, thereby forming a complete solar cell module.

[0129] It should be understood that the various forms of the processes shown above can be used to reorder, add, or delete steps. For example, the steps described in the present invention can be performed in parallel, sequentially, or in a different order, as long as the desired results of the technical solution of the present invention can be achieved. This is not limited herein.

[0130] The above specific embodiments do not limit the scope of protection of the present invention. Those skilled in the art will appreciate that various modifications, combinations, sub-combinations, and substitutions may be made based on design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention are intended to be included within the scope of protection of the present invention.

Claims

1. An etching method, characterized in that: The etching method is used to etch the perovskite functional layer of the cell to be etched; the etching method comprises the steps of: Control the spot overlap rate to be less than the preset overlap rate; Generate laser light with preset performance parameters; shaping the laser into a rectangular flat-top light; Focusing the rectangular flat-top light into a light spot of a preset size, and etching the perovskite functional layer in the cell to be etched according to the light spot overlap rate; The controlling the light spot overlap rate to be less than a preset overlap rate includes: Determine the minimum electrode contact area based on the minimum electrode width and the length of a single sub-cell; Determine the number of pulses required for the length of the single sub-battery according to the minimum electrode contact area; Adjusting the spot repetition frequency and linear speed so that the number of pulses is less than the preset number of pulses; The spot overlap rate is determined according to the spot repetition frequency and the linear speed that make the pulse number smaller than the preset pulse number.

2. The etching method according to claim 1, wherein: After focusing the rectangular flat-top light into a light spot of a preset size and etching the perovskite functional layer in the cell to be etched according to the light spot overlap rate, the method includes: Grooves with preset intervals are formed in the perovskite functional layer.

3. The etching method according to claim 1, wherein: The cell to be etched includes a bottom electrode and a perovskite functional layer stacked in sequence; and the number of pulses required to determine the length of the single sub-cell according to the minimum electrode contact area includes: Determining the width of the bottom electrode exposed after the light spot acts on the perovskite functional layer; The number of pulses required for the length of the single sub-cell is determined according to the ratio of the minimum electrode contact area to the square of the width of the exposed bottom electrode.

4. The etching method according to claim 1, wherein: After the laser with preset performance parameters is generated, the method further includes: The laser light is trimmed and filtered.

5. The etching method according to claim 1, wherein: The perovskite functional layer includes a first transmission layer, a first passivation modification layer, a perovskite absorption layer, a second transmission layer and a second passivation modification layer arranged in a stacked manner; or, the perovskite functional layer includes a first transmission layer, a perovskite absorption layer and a second transmission layer arranged in a stacked manner.

6. The etching method according to claim 1, wherein: The groove formed by etching is the second groove of the perovskite component; the perovskite component is provided with a plurality of first grooves, a plurality of second grooves and a plurality of third grooves along the first direction; the second groove includes a plurality of sub-grooves with preset intervals.

7. An etching device, characterized in that: Execute the etching method according to any one of claims 1 to 6; the etching device comprises: A control module, used for controlling the light spot overlap rate to be less than a preset overlap rate; A laser generation module, used to generate lasers with preset performance parameters; A shaping module, used for shaping the laser into a rectangular flat-top light; A focusing module, configured to focus the rectangular flat-top light into a light spot of a preset size, and etch the perovskite functional layer in the cell to be etched according to the light spot overlap rate; The control module includes: A minimum electrode contact area determination unit, used to determine the minimum electrode contact area according to the minimum electrode width and the length of a single sub-battery; a pulse number determination unit, configured to determine the number of pulses required for the length of the single sub-battery according to the minimum electrode contact area; An adjusting unit, used for adjusting the light spot repetition frequency and the linear speed so that the number of pulses is less than a preset number of pulses; The light spot overlap ratio determining unit is configured to determine the light spot overlap ratio according to a light spot repetition frequency and a linear velocity that make the number of pulses less than a preset number of pulses.

8. The etching device according to claim 7, characterized in that: Also includes: Optical path correction module; The optical path correction module is located between the laser generation module and the shaping module; The optical path correction module is used to correct and filter the laser.

9. The etching device according to claim 8, characterized in that: The optical path correction module includes a beam expander and an aperture; the beam expander is located between the laser generating module and the aperture; the aperture is located between the beam expander and the shaping module; The beam expander is used to correct the laser light with a divergence angle generated by the laser generating module; The aperture is used to filter the corrected laser and transmit it to the shaping module.

10. The etching device according to claim 9, characterized in that: The shaping module includes a shaping unit and a light spot analysis unit; the shaping unit is located between the aperture and the focusing module; The shaping unit is used to shape the laser into a rectangular flat top light; The light spot analysis unit is used to detect the light spot shape and energy density distribution of the rectangular flat top light.

11. The etching device according to claim 7, characterized in that: The focusing module includes a reflection unit and a focusing unit; The reflecting unit is used to guide the rectangular flat top light into the focusing unit; The focusing unit is used to focus the rectangular flat-top light into a light spot of a preset size.

12. The etching device according to claim 7, characterized in that: The battery to be etched is provided with a plurality of first grooves along a first direction; The etching device further includes: a visual positioning module; the visual positioning module is connected to the control module; The visual positioning module is used to determine the positioning reference line of the first groove and transmit it to the control module; The control module is used to set a compensation amount according to the positioning reference line to control the distance from the first groove.

13. The etching device according to claim 7, characterized in that: Also includes: Vacuum module; The dust collection module is used to absorb decomposition particles generated during the etching process.

14. A solar cell module, characterized in that: The etching method according to any one of claims 1 to 6 is used to form the solar cell assembly; the solar cell assembly comprises a plurality of battery cells; the battery cells comprise a bottom electrode layer, a perovskite functional layer and a top electrode layer stacked in sequence; The solar cell assembly is provided with a plurality of first grooves, a plurality of second grooves and a plurality of third grooves along a first direction; the solar cell assembly is divided into a plurality of battery cells connected in series by the plurality of first grooves, the plurality of second grooves and the plurality of third grooves; The first groove passes through the bottom electrode layer; the second groove includes a plurality of sub-grooves, and the plurality of sub-grooves are arranged along the second direction at a preset interval; the sub-grooves pass through the perovskite functional layer; the third groove passes through the top electrode layer and the perovskite functional layer.

Images