Etching method, etching device and perovskite component

Abstract

The embodiments of the present invention disclose an etching method, an etching device, and a perovskite component. The etching method is used to etch the top electrode of a cell to be etched; the etching method includes: shaping a Gaussian beam into a square flat-top beam; adjusting a preset focal position of the square flat-top beam; controlling the cell to be etched and the square flat-top beam to relative positions, and controlling the relative movement of the cell to be etched and the square flat-top beam along a first direction and / or a second direction; etching the cell to be etched according to the preset focal position, so that the depth of the etched groove is greater than or equal to the thickness of the top electrode and less than the sum of the thickness of the top electrode and the perovskite functional layer. The technical solution of the embodiment of the present invention, by converting a Gaussian beam into a square flat-top beam, and the lower edge of the focal depth of the generated square flat-top beam only acts on the top electrode on the surface of the film layer, reduces the actual power used and can avoid the influence of the laser on other functional layers in the perovskite component, thereby improving the performance of the perovskite component.

Description

Technical Field

[0001] The present invention relates to the technical field of solar cells, and in particular to an etching method, an etching device and a perovskite component. Background Art

[0002] The production of perovskite solar cell modules requires three parallel laser scribing processes to divide the entire cell into several sub-cells connected in series. A final laser edge cleaning process is also required to remove the conductive deposited film at the edge of the cell. The first process, P1, uses a laser to separate the transparent conductive bottom electrode on the glass substrate into independent regions before depositing the transmission layer. The second process, P2, laser scribing the perovskite light-absorbing layer on the transparent conductive bottom electrode exposes the transparent conductive bottom electrode without damage. The third process, P3, completes the top electrode fabrication by laser-scribing the electrode layer, transmission layer, and perovskite light-absorbing layer above the transparent conductive bottom electrode, forming a structure in which the sub-cells are independent and connected in series via the upper and lower electrode layers.

[0003] There are two existing methods for the third step P3 scribing. One is for a rigid transparent glass substrate. Figure 1 This is a schematic diagram of the third process of the transparent substrate structure in the related art, such as Figure 1 As shown, it includes a bottom electrode 1, a perovskite layer 2 and a top electrode 3 stacked in sequence, and a green picosecond laser beam 4 with a wavelength of 400-800nm ​​is selected to be incident from the substrate surface to remove the perovskite layer 2 and the top electrode 3 above the bottom electrode 1 while maintaining the integrity of the bottom electrode 1 film layer. Another method is for a non-transparent rigid material flexible substrate, Figure 2 This is a schematic diagram of the third process of the non-transparent substrate structure in the related art, such as Figure 2 As shown, the film comprises a bottom electrode 1, a perovskite layer 2, and a top electrode 3 stacked in sequence. A 300-600nm wavelength green picosecond laser beam 5 is selected to be incident on the top electrode 3 on the film surface for scribing. Both laser etching methods use a Gaussian beam type. To ensure the required isolation resistance between the sub-cells and avoid poor contact between the sub-cells, both laser scribing methods remove all functional layers above the bottom electrode 1. Figure 3 This is a schematic diagram of the passivation structure of the perovskite solar cell structure in the related art, such as Figure 3As shown, perovskite solar cells are formed using a stacked structure. The entire cell structure includes a glass substrate 6, a bottom electrode 1, a perovskite layer 2, a top electrode 3, and a passivation layer 7. Passivation layer 7 can be an aluminum oxide passivation layer. A dense layer of aluminum oxide further isolates water and oxygen and acts as a barrier to prevent contact between the top electrode 3 and the perovskite layer 2, preventing ion diffusion and degradation reactions, and improving the stability of the perovskite module. The aluminum oxide passivation layer is prepared after the laser process is completed and before the module is packaged.

[0004] However, when the existing process is used to perform the third step P3 of engraving, melt may accumulate at the edge of the groove. Figure 4 This is a schematic diagram of the third process of applying the existing process to produce a "crater". Figure 4 As shown, when the existing process is used to perform the third step P3 etching, melt will accumulate at the edge of the groove to form a higher "crater", which affects the subsequent deposition of the aluminum oxide passivation layer. Specifically, it is manifested in the following aspects: (1) The thickness of the aluminum oxide passivation layer deposited by the existing structure is only a few nanometers to tens of nanometers, which is used to repair defects and isolate moisture and oxygen. However, when the existing process is used to perform the third step P3 etching, the edge melt accumulation (crater) formed is micron-level thick. Therefore, thicker melt accumulation requires the deposition of thicker aluminum oxide material, which increases the process cost and deposition efficiency; (2) In the subsequent lamination process, the melt accumulation may pierce the prepared aluminum oxide passivation layer, and there is a certain probability that the side wall of the groove formed along the third step P3 etching will contact the bottom electrode 1, which will cause the top electrode 3 to directly contact the bottom electrode 1 and cause leakage current. Summary of the Invention

[0005] The present invention provides an etching method, an etching device and a perovskite component to solve the problems of high process cost and low deposition efficiency, and to avoid leakage current caused by direct contact between the top electrode and the bottom electrode.

[0006] According to one aspect of the present invention, an etching method is provided, which is used to etch a top electrode of a battery to be etched; the etching method comprises:

[0007] Shape the Gaussian beam into a square flat-top beam;

[0008] Adjust the preset focus position of the square flat top beam;

[0009] Controlling the battery to be etched and the square flat top beam to relative positions, and controlling the battery to be etched and the square flat top beam to move relative to each other along a first direction and / or a second direction, wherein the first direction is different from the second direction;

[0010] The cell to be etched is etched according to a preset focus position so that the depth of the etched groove is greater than or equal to the thickness of the top electrode and less than the sum of the thicknesses of the top electrode and the perovskite functional layer.

[0011] Optionally, controlling the cell to be etched and the square flat top beam to relative positions includes:

[0012] Controlling the cell to be etched to the position of the square flat-top beam; and / or controlling the square flat-top beam to the position of the cell to be etched.

[0013] Optionally, adjust the preset focus position of the square top hat beam, including:

[0014] The preset focus position is determined by adjusting the focal length of the optical module; wherein the preset focus position is the preset focus position of the square flat-top beam.

[0015] Optionally, the preset focus position is determined by adjusting the focal length of the optical module, including:

[0016] Determining an adjustment range of the distance between the optical module outlet and the top electrode surface according to a maximum value and a minimum value of the distance between the optical module outlet and the top electrode surface;

[0017] Mark the adjustment range N times at equal preset intervals;

[0018] Obtaining the number of iterations and the initial laser power, and determining the laser power for N times of scribing according to the number of iterations and the initial laser power;

[0019] determining a power density based on the laser power and comparing the power density with the ablation threshold of the top electrode;

[0020] When the power density is equal to the ablation threshold, or the difference between the power density and the ablation threshold is less than or equal to the preset difference, the focal length of the optical module and the preset focus position are determined.

[0021] Optionally, after determining the power density according to the laser power and comparing the power density with the ablation threshold of the top electrode, the method further includes:

[0022] When the power density is less than the ablation threshold, two characteristic lines are determined in N times of scribing;

[0023] Re-determine the adjustment range of the distance between the optical module outlet and the top electrode surface according to the distance between the two characteristic lines, and at the same time increase the number of iterations by 1 for updating;

[0024] The iterative power density is calculated according to the updated number of iterations and the laser power, and the iterative power density is compared with the ablation threshold.

[0025] Optionally, the optical module includes a laser generating unit, an optical path correction unit and a shaping unit; the laser generating unit, the optical path correction unit and the shaping unit are located in the same optical path, and the optical path correction unit is located between the laser generating unit and the shaping unit;

[0026] Shape a Gaussian beam into a square top-hat beam, including:

[0027] Generate a Gaussian beam of a preset wavelength by a laser generating unit; or generate a Gaussian beam of a preset wavelength by a laser generating unit;

[0028] The Gaussian beam is received by the optical path correction unit and the Gaussian beam is corrected and filtered;

[0029] The shaping unit receives the Gaussian beam corrected and filtered by the optical path correction unit and shapes the Gaussian beam into a square flat-top beam.

[0030] Optionally, the optical module further includes a reflection unit; after the shaping unit receives the Gaussian beam corrected and filtered by the optical path correction unit and shapes the Gaussian beam into a square flat-top beam, the optical module further includes:

[0031] The propagation direction of the square flat-top beam is changed by a reflection unit so that the square flat-top beam is perpendicular to the Gaussian beam.

[0032] Optionally, the optical module further includes a focusing unit; and adjusting the focal length of the optical module to determine a preset focal position includes:

[0033] The square flat top beam is focused into a preset spot size by a focusing unit;

[0034] The preset focus position is determined by adjusting the focal length of the focusing unit.

[0035] Optionally, controlling the cell to be etched and the square flat top beam to relative positions, and controlling the cell to be etched and the square flat top beam to move relative to each other along the first direction and / or the second direction, includes:

[0036] The battery to be etched is controlled to the square flat-top beam through a vacuum adsorption platform;

[0037] The electromagnetic motion unit moves along the first direction, and controls the focusing unit to move in the second direction according to a preset step distance on one side of the battery to be etched, so as to divide the battery to be etched into sub-battery units.

[0038] Optional,

[0039] The electromagnetic motion unit moves along a first direction, and controls the focusing unit to move in a second direction according to a preset step distance on one side of the battery to be etched, so as to divide the battery to be etched into sub-battery units, including:

[0040] The positioning reference line is obtained through the visual positioning unit and transmitted to the control module;

[0041] The control module controls the electromagnetic motion unit to move along a first direction;

[0042] The control module also sets a compensation amount according to the positioning reference line to control the focusing unit to move in the second direction according to a preset step distance on one side of the battery to be etched, thereby dividing the battery to be etched into sub-battery units.

[0043] Optionally, before adjusting the preset focus position of the square flat top beam, the method further includes:

[0044] Adjust the laser frequency and processing speed according to the current spot size to obtain the preset spot overlap rate.

[0045] Optionally, the perovskite functional layer includes a first transmission layer, a first passivation modification layer, a perovskite absorption layer, a second transmission layer and a second passivation modification layer stacked in sequence; or,

[0046] The perovskite functional layer includes a first transmission layer, a perovskite absorption layer and a second transmission layer which are stacked.

[0047] Optionally, the groove formed by etching is the third groove of the perovskite component; the perovskite component is provided with a plurality of first grooves, a plurality of second grooves and a plurality of third grooves along the first direction; the depth of the third groove is greater than or equal to the thickness of the top electrode and less than the thickness of the top electrode and the perovskite functional layer.

[0048] According to another aspect of the present invention, an etching device is provided for performing the above-mentioned etching method, the etching device comprising:

[0049] An optical module for shaping a Gaussian beam into a square flat-top beam;

[0050] An adjustment module, used for adjusting a preset focus position of the square flat-top beam;

[0051] A motion module, used to control the battery to be etched and the square flat top beam to relative positions, and to control the battery to be etched and the square flat top beam to move relative to each other along a first direction and / or a second direction, where the first direction is different from the second direction;

[0052] The etching module is used to etch the cell to be etched according to a preset focus position so that the depth of the etching groove is greater than or equal to the thickness of the top electrode and less than the sum of the thicknesses of the top electrode and the perovskite functional layer.

[0053] According to another aspect of the present invention, a perovskite component is provided, which is formed by applying the above-mentioned etching method; the perovskite component includes a plurality of battery cells; the battery cells include a bottom electrode layer, a perovskite functional layer, and a top electrode layer stacked in sequence;

[0054] The perovskite component is provided with a plurality of first grooves, a plurality of second grooves and a plurality of third grooves along a first direction; the perovskite component is divided into a plurality of battery cells connected in series by the plurality of first grooves, the plurality of second grooves and the plurality of third grooves;

[0055] The first groove penetrates the bottom electrode layer; the second groove penetrates the perovskite functional layer; and the third groove penetrates the top electrode layer. The technical solution of an embodiment of the present invention provides an etching method that converts a Gaussian beam into a square flat-top beam. The bottom edge of the resulting square flat-top beam's focal depth acts only on the top electrode on the film surface. Compared to the existing third step, P3 etching process, this method selectively removes a film layer of a specified thickness, reducing actual power usage and preventing the laser from affecting other functional layers in the cell being etched. By using the square flat-top beam to etch the top electrode while retaining all or part of the perovskite functional layer, the resulting grooves are virtually free of melt-induced "craters" on either side, preventing shorting of the top electrodes on either side. The perovskite functional layer is retained as an insulating barrier between the top and bottom electrodes, preventing shorting of the upper and lower electrodes. Furthermore, by using a square flat-top beam with uniform energy distribution and using lower laser processing power to remove thinner film layers, the resulting grooves have smoother edges and a lower melting height, facilitating the subsequent preparation of water and oxygen barrier layers such as aluminum oxide. In addition, by using square flat-top light for etching, a neat morphology of the groove edges can be achieved under a process with low spot overlap rate, which can improve processing efficiency and the performance of the formed perovskite components.

[0056] It should be understood that the content described in this section is not intended to identify the key or important features of the embodiments of the present invention, nor is it intended to limit the scope of the present invention. Other features of the present invention will become readily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0057] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0058] Figure 1 This is a schematic diagram of the third process of the transparent substrate structure in the related art;

[0059] Figure 2 This is a schematic diagram of the third process of scratching the non-transparent substrate structure in the related art;

[0060] Figure 3 It is a schematic diagram of the passivation structure of the perovskite solar cell structure in the related art;

[0061] Figure 4 It is a schematic diagram of applying the existing process to carry out the third process to produce the "crater";

[0062] Figure 5 is a flow chart of an etching method provided according to an embodiment of the present invention;

[0063] Figure 6 is a schematic diagram of converting a Gaussian beam into a flat-top beam according to an embodiment of the present invention;

[0064] Figure 7 is a schematic diagram of a focus position provided according to an embodiment of the present invention;

[0065] Figure 8 is a flow chart of another etching method provided according to an embodiment of the present invention;

[0066] Figure 9 is a schematic diagram of finding the optimal focus according to an embodiment of the present invention;

[0067] Figure 10 is a flowchart of finding the optimal focus provided by an embodiment of the present invention;

[0068] Figure 11 is a schematic diagram of applying aperture filtering to correct light spots according to an embodiment of the present invention;

[0069] Figure 12 is a flow chart of another etching method provided according to an embodiment of the present invention;

[0070] Figure 13 2 is a schematic diagram of forming a third process P3 line groove by applying flat-top spot etching according to an embodiment of the present invention;

[0071] Figure 14 is a structural schematic diagram of an etching device provided according to an embodiment of the present invention;

[0072] Figure 15 2 is a schematic structural diagram of a perovskite component provided according to an embodiment of the present invention;

[0073] Figure 16 Schematic diagram of the thickness of the perovskite layer retained in the center of the third process P3 line groove formed by applying flat-top spot etching according to an embodiment of the present invention;

[0074] Figure 17 3 is a schematic diagram comparing the photoelectric conversion efficiency of perovskite components corresponding to the selective removal of the top electrode and the removal of the functional layer above the bottom electrode provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0075] In order to enable those skilled in the art to better understand the solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts should fall within the scope of protection of the present invention.

[0076] It should be noted that the terms "first", "second", etc. in the description and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that the numbers used in this way can be interchanged where appropriate so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0077] The following problems may occur when the laser beam is emitted from the back of the substrate to perform the third process P3 line drawing in the prior art: (1) The cleanliness requirements for the back of the substrate and the bottom electrode surface are relatively high. When there is dirt on the back of the substrate and the bottom electrode surface, a light shielding point will be formed, resulting in a short circuit of the top electrode of the sub-cell and serious leakage current in the sub-cell; (2) The light passes through the bottom electrode-light absorbing layer-top electrode in sequence. The green light beam is absorbed at the light absorbing layer and the bottom electrode. The stress generated by the evaporation of the light absorbing layer at the interface removes the light absorbing layer and the top electrode together in the form of an explosion, which is easy to cause interface problems; (3) The etching part of the perovskite absorption layer will destroy the local crystal structure of the perovskite and introduce more crystal defects, thereby causing abnormal carrier density; (4) The scratching method of the back-emitting light explosion mechanism will cause different degrees of lateral stratification between the functional layers, affecting the migration of carriers; (5) The light emission from the back of the substrate requires a relatively high transmittance of the transparent substrate and the bottom electrode material, otherwise the laser energy will be lost, resulting in excessive energy consumption.

[0078] The existing laser beam emitting light from the film surface for the third process P3 line engraving technology has the following problems: (1) The traditional spot energy is normally distributed. The laser energy is injected from the film surface and is absorbed by the top electrode, absorption layer and bottom electrode in sequence. However, the top electrode has a strong ability to absorb laser energy. In this way, the top electrode preferentially absorbs most of the energy and converts it into most of the heat and potential energy of the melt. The other thin film layers have weaker energy absorption and release the absorbed energy in the form of heat, which eventually forms a melt accumulation and remodeling layer at the edge of the etched line groove. After lamination and packaging, a short circuit between the top electrode and the bottom electrode will form, resulting in leakage current; (2) If you want to reduce the remodeling layer of the top electrode at the groove, you need to inject a laser with higher energy. However, since the laser used is of Gaussian type, if you want to directly evaporate the top electrode at the edge, you need more energy. In this way, the energy in the middle area of ​​the Gaussian light is enough to damage the surface structure of the bottom electrode, which is not conducive to current transmission and battery aging life.

[0079] To address the above problems, the embodiments of the present invention provide the following technical solutions: Figure 5 This is a flow chart of an etching method provided according to an embodiment of the present invention. This embodiment is applicable to the third scratching process in a perovskite component. The etching method can be performed by an etching device, which can be implemented in the form of hardware and / or software. The etching method is used to etch the top electrode of the cell to be etched. Figure 5 As shown, the etching method includes:

[0080] S110, shaping the Gaussian beam into a square flat-top beam.

[0081] Specifically, a square flat-top beam with uniform energy distribution is used for etching to avoid the problems caused by the uneven energy distribution of a Gaussian beam. Furthermore, etching from the top electrode on the film surface avoids the disadvantage of light emitting from the back of the substrate, increasing the diversity of the third step, P3 etching. Figure 6 FIG. 1 is a schematic diagram of converting a Gaussian beam into a flat-top beam according to an embodiment of the present invention. Figure 6 As shown, a short-wavelength picosecond laser paired with a beam shaping device can be used to convert a circular Gaussian beam 8 into a square flat-top beam 9. The optical module can include components such as a laser, a beam shaper, and a focusing lens. These components form a flight path, shaping the Gaussian beam emitted by the laser into a square flat-top beam for etching the top electrode of the cell to be etched. The cell to be etched is one form of the perovskite component during fabrication.

[0082] S120: Adjust the preset focus position of the square flat-top beam.

[0083] In an optional embodiment of the present invention, S120, adjusting the preset focus position of the square flat top beam, includes: determining the preset focus position by adjusting the focal length of the optical module; wherein the preset focus position is the preset focus position of the square flat top beam.

[0084] Specifically, the preset focal position is the predetermined laser focus position with the highest energy density. Forming the corresponding subcell by etching the top electrode requires a high-quality shaped beam spot, a flat-top beam with uniform energy density distribution, and precise positioning of the laser focus to ensure that the bottom edge of the focal depth range with the highest energy density at the short focus falls on the surface of the film to be processed. Figure 7 is a schematic diagram of the focus position provided by an embodiment of the present invention, such as Figure 7 As shown, the focus F of the focusing mirror 11 and the depth of focus range DOF control the distance between the focusing mirror 11 and the top electrode 3 so that the lower edge of the depth of focus range falls on the surface of the top electrode 3. Placing the lower edge of the effective focal range of the laser beam at the center of the film surface and combining it with the process can achieve selective removal of the top electrode 3 from the film surface, thereby retaining a thicker perovskite light-absorbing layer.

[0085] The method for adjusting the focal length may include the following steps: (1) determining the melting threshold value P0 of the top electrode by the effect of the laser power gradient and the spot ablation; illustratively, the laser power is increased in sequence according to the preset gradient interval, and each laser power is applied to etch the top electrode in sequence, and the laser power corresponding to the ablation of the top electrode is determined according to the effect of the spot ablation, which is the melting threshold value P0 of the top electrode. (2) discretizing the laser spot, that is, setting the spot overlap number to be greater than 1; (3) setting the focal length to fn and the initial focal length to f0; (4) setting the step distance L (L can be any real number), and the focal length becomes fn=f0+nL; illustratively, when the first line is drawn, the focal length is f1=f0+1. Record the spot diameter Dn and the pulse energy Wn, and calculate the spot area Sn based on the spot diameter Dn; spot area Sn=1 / 4*π*Dn 2 , calculate the energy density Pn=Wn / Sn based on the pulse energy Wn and the spot area Sn; (5) compare the energy density Pn with the melting threshold P0 of the top electrode. If the energy density Pn is equal to the melting threshold P0 of the top electrode, or the difference between the melting threshold P0 of the top electrode and the ratio of the energy density Pn to the melting threshold P0 of the top electrode is less than or equal to 2%, then determine the optimal focus position; if the energy density Pn is less than the melting threshold P0 of the top electrode, repeat step (4), set n=n+1 to continue the loop calculation until the energy density Pn is equal to the melting threshold P0 of the top electrode, stop the loop, and determine the optimal focus position. For example, when the first line is drawn, the focal length is f1=f0+1, the spot diameter is D1, the pulse energy is W1, and the calculated spot area is S1=1 / 4*π*D1 2, energy density P1=W1 / S1, compare the energy density P1 with the melting threshold P0 of the top electrode. If the energy density P1 is equal to the melting threshold P0 of the top electrode, or the difference between the melting threshold P0 of the top electrode and the ratio of the energy density P1 to the melting threshold P0 of the top electrode is less than or equal to 2%, then the focal length is f1; if the energy density P1 is less than the melting threshold P0 of the top electrode, adjust the focal length to f2=f0+L, repeat step (4) until the optimal focal position is found, and end the cycle.

[0086] S130, controlling the cell to be etched and the square flat top beam to relative positions, and controlling the cell to be etched and the square flat top beam to move relative to each other along a first direction and / or a second direction, where the first direction is different from the second direction.

[0087] Specifically, the vacuum electromagnetic motion platform can stably adsorb the battery to be etched, overcoming the unstable grasping shortcomings of traditional cylinder mechanical claws and enabling the maximum possible adsorption and grasping of the battery to be etched for smooth scribing. When the vacuum electromagnetic motion platform is powered on and given a signal, it controls the movement of the battery to be etched in a first direction. At this time, the focusing mirror continuously moves in a second direction at a set step distance on one side of the battery to be etched, forming a grating on the battery to be etched, thereby dividing the battery to be etched into sub-cells.

[0088] It should be noted that when the battery to be etched is a rectangular parallelepiped, the first direction may be a direction parallel to the short side of the battery to be etched, and the second direction may be a direction parallel to the long side of the battery to be etched; alternatively, the first direction may be a direction parallel to the long side of the battery to be etched, and the second direction may be a direction parallel to the short side of the battery to be etched, without specific limitation herein. The first direction and the second direction may be perpendicular to each other.

[0089] In an optional embodiment of the present invention, controlling the battery to be etched and the square flat top beam to relative positions includes: controlling the battery to be etched to the square flat top beam; and / or controlling the square flat top beam to the battery to be etched.

[0090] Specifically, before controlling the relative movement between the cell to be etched and the square flat top beam, the cell to be etched is first controlled to be at the position of the square flat top beam, or the square flat top beam is controlled to be at the position of the cell to be etched.

[0091] S140, etching the cell to be etched according to the preset focus position, so that the depth of the etched groove is greater than or equal to the thickness of the top electrode and less than the sum of the thicknesses of the top electrode and the perovskite functional layer.

[0092] Specifically, the depth of the etching groove can be represented by H, the thickness of the top electrode can be represented by H1, and the thickness of the perovskite functional layer can be represented by H2. After determining the optimal focus position according to the optimal focus position determination method, the control module controls the optical module to operate and etches the perovskite component according to the determined position, so that the depth of the etching groove H is greater than or equal to the thickness of the top electrode H1 and less than the sum of the thickness of the top electrode and the perovskite functional layer H1 + H2, that is, H1 ≤ H < H1 + H2. The top electrode of the cell to be etched is selectively removed from the surface of the film layer. While maintaining absolute isolation between the sub-cells, the perovskite light-absorbing layer in the middle of the groove is basically retained. Lower processing energy is used to achieve a better etching morphology, effectively improving the photoelectric conversion efficiency and aging stability of the perovskite component. The perovskite layer retained in the middle of the groove acts as a barrier layer between the top and bottom electrodes, reducing the possibility of the top electrode shorting to the bottom electrode along the sidewalls of the groove.

[0093] The technical solution of the present embodiment provides an etching method that converts a Gaussian beam into a square flat-top beam. The resulting square flat-top beam has a focal depth that only affects the top electrode on the film surface. Compared to the existing third-step P3 etching process, this method selectively removes a film layer of a specified thickness, reducing actual power usage and preventing the laser from affecting other functional layers in the cell being etched. The square flat-top beam is used to etch the top electrode while retaining all or part of the perovskite absorber layer. The resulting grooves are virtually free of melted "craters" on either side, preventing shorting of the top electrodes on either side of the grooves. The perovskite functional layer is retained as an insulating barrier between the top and bottom electrodes, preventing shorting of the upper and lower electrodes in the grooves. Furthermore, the use of a square flat-top beam with uniform energy distribution and the use of lower laser processing power to remove thinner film layers results in smoother groove edges and a lower melting height at the groove edges, facilitating the subsequent preparation of water and oxygen barrier layers such as aluminum oxide. Furthermore, the use of square flat-top beams for etching allows for the achievement of neat groove edge morphology with low spot overlap, improving processing efficiency and enhancing the performance of the resulting perovskite device.

[0094] Figure 8 This is a flow chart of another etching method provided according to an embodiment of the present invention. This embodiment is a detailed description of some technical features of the above embodiment. Figure 8 As shown, the etching method includes:

[0095] S210, shaping the Gaussian beam into a square flat-top beam.

[0096] S211 , determining an adjustment range of the distance between the optical module outlet and the top electrode surface according to the maximum value and the minimum value of the distance between the optical module outlet and the top electrode surface.

[0097] Specifically, the optical module may be used to focus and form a light spot by a focusing mirror. The distance between the focusing mirror outlet and the top electrode surface can be represented by H, the maximum value of the distance between the focusing mirror outlet and the top electrode surface can be represented by Hmax, and the minimum value of the distance between the focusing mirror outlet and the top electrode surface can be represented by Hmin. The distance H between the focusing mirror outlet and the top electrode surface needs to satisfy Hmin<H<Hmax. The adjustment range of the distance between the optical module outlet and the top electrode surface can be represented by H1, and the adjustment range of the distance between the optical module outlet and the top electrode surface can be represented by the difference between the maximum and minimum values ​​of the distance between the optical module outlet and the top electrode surface, that is, H1=Hmax-Hmin.

[0098] S212: Mark the adjustment range N times at equal preset intervals.

[0099] Specifically, to shorten the time required to determine the optimal solution, the scribing sequence is set from the minimum value Hmin to the maximum value Hmax. The adjustment range H1 is evenly spaced across the cell to be etched, and scribing is performed N times. The preset spacing can be represented by d, where d = H1 / N.

[0100] S213 , obtaining the number of iterations and the initial laser power, and determining the laser power for N times of scribing according to the number of iterations and the initial laser power.

[0101] Specifically, the existing Gaussian beam is used as the initial value for optimization, and after confirming the initial spot overlap number, the number of spots is 0. 初 The initial power is represented by W0. The square spot pulse energy distribution after beam shaping is more uniform than the Gaussian beam pulse energy distribution. With the same spot area and the same single pulse energy, the energy density in the central area of ​​the square flat-top beam is smaller than that in the central area of ​​the Gaussian beam. In view of this situation, the single pulse energy is expanded to make the square beam single pulse energy density value close to the Gaussian beam pulse energy density value, thereby determining the initial value of the square beam. The initial spot overlap number O is selected. 初 The initial laser power W1 and the initial power W0 of the existing stable process meet a certain relationship, that is, W1=1 / 2*W0. Set the number of iterations to n, then the laser power Wn during N times of scribing = (1 / 2) n *W0.

[0102] S214 , determining power density according to the laser power, and comparing the power density with the ablation threshold of the top electrode.

[0103] Specifically, the ablation threshold of the top electrode is expressed as P 消融 Indicates power density by ρn. Power density ρn=4Wn / (π*R 2), where R represents the diameter of the laser spot and Wn represents the laser power. The calculated power density is compared with the ablation threshold to determine whether the distance H between the focusing lens outlet and the top electrode surface is the optimal distance. If the power density and the ablation threshold are equal, the distance H between the focusing lens outlet and the top electrode surface is determined to be the optimal distance. If the power density and the ablation threshold are not equal, the distance between the focusing lens outlet and the top electrode surface is further reduced to find the optimal distance that allows complete etching of the top electrode without affecting the perovskite absorber layer.

[0104] S215 . When the power density is equal to the ablation threshold, or the difference between the power density and the ablation threshold is less than or equal to the preset difference, determine the focal length and preset focus position of the optical module.

[0105] S216 : When the power density is less than the ablation threshold, two characteristic lines are determined in N times of scribing.

[0106] Specifically, when the power density is less than the ablation threshold, two grooves with obvious features (regions with similar defocus effects at both ends) are selected to divide the axis into three regions. Figure 9 is a schematic diagram of finding the optimal focus according to an embodiment of the present invention, such as Figure 9 As shown, two characteristic lines are determined in the etching of N1 third process P3 line grooves, including characteristic line N2 and characteristic line N22. The two characteristic lines divide the initial area into three small areas: area A, area B and area C.

[0107] S217 , re-determine the adjustment range of the distance between the optical module outlet and the top electrode surface according to the distance between the two characteristic lines, and simultaneously increase the number of iterations by 1 for updating.

[0108] Specifically, the adjustment range is redefined based on the distances between the focusing lens outlet and the top electrode surface corresponding to the two characteristic lines. For example, the distance corresponding to characteristic line N2 is denoted by H2, and the distance corresponding to characteristic line N22 is denoted by H22. Then, Hmin=H2, Hmax=H22, and W2=1 / 2*W1.

[0109] In an optional embodiment of the present invention, the adjustment range of the distance between the optical module outlet and the top electrode surface can be re-determined based on the spacing between the two characteristic lines, and the number of iterations can be increased by 2 for updating. Alternatively, the adjustment range of the distance between the optical module outlet and the top electrode surface can be re-determined based on the spacing between the two characteristic lines, and the number of iterations can be increased by 2 for updating. If the power density is still less than the ablation threshold, two characteristic lines are determined during N strokes, and the adjustment range of the distance between the optical module outlet and the top electrode surface is re-determined based on the spacing between the two characteristic lines, and the number of iterations can be increased by 1 for updating. The value by which the number of iterations is increased is not specifically limited herein.

[0110] S218 , calculating the power density after iteration according to the updated number of iterations and the laser power, and comparing the power density after iteration with the ablation threshold.

[0111] Specifically, the iterative calculation is performed according to the method in S217 until the power density is equal to the ablation threshold of the top electrode, and the iteration is stopped. Figure 10 is a flow chart of finding the optimal focus according to an embodiment of the present invention. Figure 10 As shown, S11, iteration number n=1, initial power W0; S12, laser power Wn=(1 / 2) n *W0; S13, set the number of scratches N; S14, find the characteristic lines Nn, Nnn; S15, calculate the power density ρn=4Wn / (π*R 2 ); S16, determine whether the power density ρn is equal to the ablation threshold of the top electrode; if so, execute S17, determine the optimal distance between the focusing mirror outlet and the top electrode surface and the optimal laser power; if not, execute S18, the number of iterations is n=n+1, and return to S12 to recalculate.

[0112] S219, controlling the battery to be etched and the square flat-top beam to relative positions, and controlling the battery to be etched and the square flat-top beam to move relative to each other along a first direction and / or a second direction, where the first direction is different from the second direction.

[0113] S220 , etching the cell to be etched according to a preset focus position, so that the depth of the etched groove is greater than or equal to the thickness of the top electrode and less than the sum of the thicknesses of the top electrode and the perovskite functional layer.

[0114] The optical module includes a laser generating unit, an optical path correction unit and a shaping unit; the laser generating unit, the optical path correction unit and the shaping unit are in the same optical path, and the optical path correction unit is located between the laser generating unit and the shaping unit.

[0115] Specifically, the laser generation unit includes but is not limited to a laser. The selected laser type is a short-wavelength picosecond ultraviolet laser with a pulse width of less than 8 picoseconds. It can achieve high peak power and low thermal impact during the etching process. The maximum power is 30W (1000KHz), and the frequency division is directly adjusted through a separator. The stable frequency ranges from 50KHz to 1000KHz. Different frequencies can generate different numbers of pulses per unit time. The coherence, collimation, and stability of the laser emitted by the selected short-wavelength picosecond ultraviolet laser meet the etching requirements. The optical path correction unit includes but is not limited to a combination of a beam expander and an aperture. Figure 11 FIG. 1 is a schematic diagram of applying aperture filtering to correct light spots according to an embodiment of the present invention. Figure 11As shown, in order to ensure the quality of the light spot and avoid the interference of stray light, the aperture 10 is used to The stray light spot 12 is filtered and corrected into a circular light spot 13. The size of the aperture 10 is smaller than the size of the light spot, which can effectively intercept the concentrated light spot energy range. The energy of the surrounding stray light spots is weak and can be ignored. The shaping unit includes but is not limited to a beam shaping mirror.

[0116] Figure 12 is a flow chart of another etching method provided according to an embodiment of the present invention. Figure 12 As shown, the etching method includes:

[0117] S310 , generating a Gaussian beam with a preset wavelength by a laser generating unit; or generating a Gaussian beam with a preset wavelength by a laser generating unit.

[0118] In an optional embodiment of the present invention, before scribing, the process further includes adjusting the laser frequency and processing linear speed based on the current spot size to obtain a preset spot overlap ratio. Specifically, the laser frequency, single pulse energy, and platform speed are adjusted to determine the spot overlap number. The spot overlap number is represented by 0, where O = 2rf / v, where r is the spot radius, f is the laser frequency, and v is the platform speed. By adjusting the spot radius, laser frequency, and platform speed, a suitable spot overlap number can be obtained. Exemplarily, the spot overlap number is adjusted to be greater than 1 by adjusting the spot radius, laser frequency, and platform speed.

[0119] S311. Receive the Gaussian beam through the optical path correction unit, and correct and filter the Gaussian beam.

[0120] Specifically, a combination of a beam expander and an aperture is used to correct and filter the Gaussian beam generated by the laser, changing the diameter and divergence angle of the laser beam emitted from the laser to form a standard, homogenized light spot with a certain beam diameter, eliminating the interference of stray light and preparing for beam shaping.

[0121] S312. Receive the Gaussian beam corrected and filtered by the optical path correction unit through the shaping unit, and shape the Gaussian beam into a square flat-top beam.

[0122] Specifically, the beam shaper shapes the expanded Gaussian beam into a flat-top beam, and the shaped beam has concentrated and uniform energy. Figure 13 FIG. 1 is a schematic diagram of forming a third process P3 line slot by applying a flat-top spot etching according to an embodiment of the present invention, as shown in FIG. Figure 13 As shown, it includes a bottom electrode 1, a perovskite layer 2, a top electrode 3 and a flat-top light spot 14. A specially customized beam shaping mirror shapes the normally distributed Gaussian beam into a flat-top light spot with uniform energy distribution, which is used to etch the third process P3 line groove.

[0123] S313. Change the propagation direction of the square flat-top beam by using a reflection unit so that the square flat-top beam is perpendicular to the Gaussian beam.

[0124] Specifically, the optical module further includes a reflecting unit, which includes but is not limited to a reflector. The reflector is used to change the propagation path of the light path, illustratively, from a horizontal direction to a vertical direction, and guide the light beam into the focusing mirror.

[0125] S314 , focusing the square flat-top beam into a preset spot size through a focusing unit.

[0126] Specifically, the optical module also includes a focusing unit, which includes but is not limited to a focusing mirror. The focusing mirror converges the light beam into the smallest possible spot size. The focusing mirror has a shorter focal depth than conventional processes, which facilitates accurate application of the film to be etched during processing.

[0127] S315: Determine a preset focus position by adjusting the focal length of the focusing unit.

[0128] S316. Control the battery to be etched to the square flat-top beam through the vacuum adsorption platform.

[0129] Specifically, a vacuum adsorption platform can be used to control the motion of the cell being etched. This platform can stably adsorb the perovskite component, overcoming the instability of traditional cylinder mechanical grippers and enabling maximum adsorption of the perovskite component for smooth etching.

[0130] S317 , the electromagnetic motion unit moves along the first direction, and controls the focusing unit to move in the second direction according to a preset step distance on one side of the battery to be etched, so as to divide the battery to be etched into sub-battery units.

[0131] In an optional embodiment of the present invention, the electromagnetic motion unit moves along a first direction, and controls the focusing unit to move in a second direction according to a preset step distance on one side of the battery to be etched, so as to divide the battery to be etched into sub-battery units, including: obtaining a positioning reference line through a visual positioning unit and transmitting it to a control module; the control module controls the electromagnetic motion unit to move along the first direction; the control module also sets a compensation amount according to the positioning reference line to control the focusing unit to move in the second direction according to a preset step distance on one side of the battery to be etched, so as to divide the battery to be etched into sub-battery units.

[0132] Specifically, a signal is transmitted to the electromagnetic motion unit, and the electromagnetic motion unit moves in a first direction. The focusing mirror is controlled to move in a second direction according to a preset step distance on one side of the battery to be etched, thereby dividing the battery to be etched into sub-battery units. The first direction and the second direction are located in the same plane and are perpendicular to each other. The visual positioning unit includes but is not limited to a camera visual positioning system. The camera visual positioning system moves coaxially with the focusing mirror. The camera visual positioning system captures the positioning reference line and feeds back to the control module. The set parameters in the control module are modified to perform the corresponding third process P3 line groove marking operation.

[0133] In an optional embodiment of the present invention, the perovskite functional layer includes a first transmission layer, a first passivation modification layer, a perovskite absorption layer, a second transmission layer and a second passivation modification layer stacked in sequence; or, the perovskite functional layer includes a first transmission layer, a perovskite absorption layer and a second transmission layer stacked in sequence.

[0134] In an optional embodiment of the present invention, the groove formed by etching is the third groove of the perovskite component; the perovskite component is provided with a plurality of first grooves, a plurality of second grooves and a plurality of third grooves along the first direction; the depth of the third groove is greater than or equal to the thickness of the top electrode and less than the thickness of the top electrode and the perovskite functional layer.

[0135] In this embodiment of the present invention, the depth of the third groove in the perovskite module is greater than or equal to the thickness of the top electrode and less than the thickness of the top electrode and the perovskite functional layer, thereby preventing short circuits between the top electrodes on both sides of the groove. The perovskite functional layer is retained as an insulating barrier between the top and bottom electrodes to prevent short circuits between the upper and lower electrodes in the groove.

[0136] Figure 14 FIG. 1 is a schematic structural diagram of an etching device provided according to an embodiment of the present invention. Figure 14 As shown, the etching device includes: an optical module 30, used to shape the Gaussian beam into a square flat-top beam; an adjustment module 40, used to adjust the preset focusing position of the square flat-top beam; a motion module 50, used to control the battery to be etched and the square flat-top beam to a relative position, and control the battery to be etched and the square flat-top beam to move relative to each other along a first direction and / or a second direction, the first direction is different from the second direction; an etching module 60, used to etch the battery to be etched according to the preset focusing position, so that the depth of the etching groove is greater than or equal to the thickness of the top electrode and less than the sum of the thickness of the top electrode and the perovskite functional layer.

[0137] The etching device provided in the embodiment of the present invention is used to execute the etching method in the embodiment of the present invention, and has the same technical effect, which will not be described in detail here.

[0138] Figure 15 Schematic diagram of the structure of a perovskite component provided according to an embodiment of the present invention. Figure 15As shown, the perovskite assembly is formed using the etching method of an embodiment of the present invention. The perovskite assembly includes multiple battery cells 20. The battery cells 20 include a bottom electrode layer 201, a perovskite functional layer 202, and a top electrode layer 203 stacked in sequence. The perovskite assembly is provided with a plurality of first grooves 100, a plurality of second grooves 200, and a plurality of third grooves 300 along a first direction X. The first grooves 100, the second grooves 200, and the third grooves 300 divide the perovskite assembly into a plurality of battery cells 20 connected in series. The first grooves 100 penetrate the bottom electrode layer 201; the second grooves 200 penetrate the perovskite functional layer 202; and the third grooves 300 penetrate the top electrode layer 203. In an embodiment of the present invention, the perovskite assembly further includes a glass substrate 400. The first electrode layer 201 is located on one side of the glass substrate 400. The perovskite functional layer 202 includes a first transport layer, a first passivation modification layer, a perovskite absorption layer, a second transport layer, and a second passivation modification layer, stacked in sequence. The perovskite functional layer 202 may also include a UV protection layer. The perovskite functional layer 202 is the core region that absorbs sunlight and generates electron-hole pairs. The top electrode layer 203 is located on the side of the perovskite functional layer 202 away from the bottom electrode layer 201.

[0139] The perovskite module is divided into a plurality of battery cells 20 connected in series by a plurality of first grooves 100, a plurality of second grooves 200, and a plurality of third grooves 300. The formed grooves provide channels for connecting the positive and negative electrodes of adjacent battery cells 20. The first grooves 100 penetrate the first electrode layer 201, and the first grooves 100 are filled with the perovskite functional layer 202, which helps to optimize the electric field distribution and carrier transmission path within the battery cell 20. When sunlight irradiates the perovskite functional layer 202, the generated electron-hole pairs can be more efficiently separated and transmitted under the action of the bottom electrode layer 201 and the top electrode layer 203, thereby improving the photoelectric conversion efficiency of the solar cell module.

[0140] The third groove 300 penetrates the top electrode layer 203. During the third etching step P3, the top electrode is selectively removed. Figure 16 This is an electron microscope diagram of the thickness of the perovskite layer retained in the center of the third process P3 line groove formed by flat-top spot etching according to an embodiment of the present invention. Figure 16As shown, for example, the thickness of the perovskite functional layer 202 itself is set to 550.00nm. After the third process P3 is performed to etch and form the third groove, the three thickness values ​​of the perovskite functional layer 202 are obtained, which are D1=548.83nm, D2=562.35nm, and D3=505.57nm. Due to the limitations of the coating process, the uniformity of the perovskite functional layer 202 of the large-area perovskite component is about 3%. The thickness itself is obtained by taking the average value of the thickness at multiple positions, so there is a case where the measured thickness is greater than the thickness setting itself. Comparing the three thickness values ​​with the thickness of the perovskite functional layer 202 itself, it can be concluded that the retained thickness of the perovskite functional layer 202 is greater than 95%.

[0141] Figure 17 : This is a schematic diagram comparing the photoelectric conversion efficiency of the perovskite module corresponding to the selective removal of the top electrode and the removal of the functional layer above the bottom electrode provided by the embodiment of the present invention. Figure 17 As shown, the photoelectric conversion efficiency of the perovskite module corresponding to the selective removal of the top electrode is greater than that of the perovskite module corresponding to the selective removal of the functional layer above the bottom electrode. By selectively removing the second electrode layer of the perovskite module from the film surface, while maintaining absolute isolation between the battery cells, the perovskite functional layer in the middle of the third groove is largely retained, effectively improving the photoelectric conversion efficiency of the perovskite module. The perovskite functional layer in the middle of the third groove acts as a barrier, reducing the possibility of shorting between the first and second electrode layers.

[0142] It should be understood that the various forms of the processes shown above can be used to reorder, add, or delete steps. For example, the steps described in the present invention can be performed in parallel, sequentially, or in a different order, as long as the desired results of the technical solution of the present invention can be achieved. This is not limited herein.

[0143] The above specific embodiments do not limit the scope of protection of the present invention. Those skilled in the art will appreciate that various modifications, combinations, sub-combinations, and substitutions may be made based on design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention are intended to be included within the scope of protection of the present invention.

Claims

1. An etching method, characterized in that: The etching method is used to etch the top electrode of the battery to be etched; the etching method comprises: Shape the Gaussian beam into a square flat-top beam; adjusting a preset focus position of the square flat-top beam; Controlling the battery to be etched and the square flat top beam to relative positions, and controlling the battery to be etched and the square flat top beam to move relative to each other along a first direction and / or a second direction, wherein the first direction is different from the second direction; Etching the cell to be etched according to the preset focus position, so that the depth of the etched groove is greater than or equal to the thickness of the top electrode and less than the sum of the thicknesses of the top electrode and the perovskite functional layer; The adjusting the preset focus position of the square flat-top beam comprises: By adjusting the focal length of the optical module, a preset focus position is determined; wherein the preset focus position is a preset focus position of the square flat-top beam; The method of adjusting the focal length of the optical module to determine the preset focal position includes: determining an adjustment range of the distance between the optical module outlet and the top electrode surface according to a maximum value and a minimum value of the distance between the optical module outlet and the top electrode surface; Marking the adjustment range N times at equal preset intervals; Obtaining the number of iterations and the initial laser power, and determining the laser power for N times of scribing according to the number of iterations and the initial laser power; determining a power density based on the laser power and comparing the power density with an ablation threshold of the top electrode; When the power density is equal to the ablation threshold, or the difference between the power density and the ablation threshold is less than or equal to a preset difference, the focal length and the preset focus position of the optical module are determined.

2. The etching method according to claim 1, wherein: The step of controlling the cell to be etched and the square flat-top beam to relative positions comprises: Controlling the cell to be etched to the position of the square flat-top beam; and / or controlling the square flat-top beam to the position of the cell to be etched.

3. The etching method according to claim 1, wherein: After determining the power density according to the laser power and comparing the power density with the ablation threshold of the top electrode, the method further includes: When the power density is less than the ablation threshold, determining two characteristic lines in the N times of scribing; Re-determining the adjustment range of the distance between the optical module outlet and the top electrode surface according to the distance between the two characteristic lines, and simultaneously adding 1 to the number of iterations for updating; The power density after iteration is calculated according to the updated number of iterations and the laser power, and the power density after iteration is compared with the ablation threshold.

4. The etching method according to claim 1, wherein: The optical module includes a laser generating unit, an optical path correction unit and a shaping unit; the laser generating unit, the optical path correction unit and the shaping unit are located in the same optical path, and the optical path correction unit is located between the laser generating unit and the shaping unit; Shape a Gaussian beam into a square top-hat beam, including: Generating a Gaussian beam of a preset wavelength by the laser generating unit; or generating a Gaussian beam of a preset wavelength by the laser generating unit; receiving the Gaussian beam through the optical path correction unit, and correcting and filtering the Gaussian beam; The shaping unit receives the Gaussian beam corrected and filtered by the optical path correction unit, and shapes the Gaussian beam into a square flat-top beam.

5. The etching method according to claim 4, characterized in that: The optical module further includes a reflecting unit; after receiving the Gaussian beam corrected and filtered by the optical path correction unit through the shaping unit and shaping the Gaussian beam into a square flat-top beam, the optical module further includes: The propagation direction of the square flat-top beam is changed by the reflection unit so that the square flat-top beam is perpendicular to the Gaussian beam.

6. The etching method according to claim 1, wherein: The optical module further includes a focusing unit; and the step of adjusting the focal length of the optical module to determine the preset focal position includes: Focusing the square flat-top beam into a preset spot size by the focusing unit; The preset focus position is determined by adjusting the focal length of the focusing unit.

7. The etching method according to claim 6, characterized in that: The controlling the battery to be etched and the square flat top beam to relative positions, and controlling the battery to be etched and the square flat top beam to move relative to each other along a first direction and / or a second direction, comprises: Control the battery to be etched to the position of the square flat-top beam through a vacuum adsorption platform; The electromagnetic motion unit moves along the first direction and controls the focusing unit to move in the second direction according to a preset step distance on one side of the battery to be etched, so as to divide the battery to be etched into sub-battery units.

8. The etching method according to claim 7, characterized in that: The electromagnetic motion unit moves along the first direction, and controls the focusing unit to move in the second direction according to a preset step distance on one side of the cell to be etched, so as to divide the cell to be etched into sub-cell units, comprising: The positioning reference line is obtained through the visual positioning unit and transmitted to the control module; The control module controls the electromagnetic motion unit to move along the first direction; The control module further sets a compensation amount according to the positioning reference line to control the focusing unit to move in the second direction according to a preset step distance on one side of the battery to be etched, thereby dividing the battery to be etched into sub-battery units.

9. The etching method according to claim 1, wherein: Before adjusting the preset focus position of the square flat-top beam, the method further includes: Adjust the laser frequency and processing speed according to the current spot size to obtain the preset spot overlap rate.

10. The etching method according to claim 1, wherein: The perovskite functional layer includes a first transmission layer, a first passivation modification layer, a perovskite absorption layer, a second transmission layer and a second passivation modification layer which are stacked; or, The perovskite functional layer includes a first transmission layer, a perovskite absorption layer and a second transmission layer which are stacked.

11. The etching method according to claim 1, wherein: The groove formed by etching is the third groove of the perovskite component; the perovskite component is provided with a plurality of first grooves, a plurality of second grooves and a plurality of third grooves along the first direction; the depth of the third groove is greater than or equal to the thickness of the top electrode and less than the thickness of the top electrode and the perovskite functional layer.

12. An etching device, characterized in that: The etching method according to any one of claims 1 to 11 is performed, wherein the etching device comprises: An optical module for shaping a Gaussian beam into a square flat-top beam; An adjustment module, used for adjusting a preset focusing position of the square flat-top beam; a motion module, configured to control the cell to be etched and the square flat-top beam to relative positions, and to control the cell to be etched and the square flat-top beam to move relative to each other along a first direction and / or a second direction, wherein the first direction is different from the second direction; An etching module is used to etch the battery to be etched according to the preset focus position, so that the depth of the etching groove is greater than or equal to the thickness of the top electrode and less than the sum of the thickness of the top electrode and the perovskite functional layer.

13. A perovskite component, characterized in that: The perovskite component is formed by the etching method according to any one of claims 1 to 11; the perovskite component comprises a plurality of battery cells; the battery cells comprise a bottom electrode layer, a perovskite functional layer and a top electrode layer stacked in sequence; The perovskite component is provided with a plurality of first grooves, a plurality of second grooves, and a plurality of third grooves along a first direction; the perovskite component is divided into a plurality of battery cells connected in series by the plurality of first grooves, the plurality of second grooves, and the plurality of third grooves; The first groove passes through the bottom electrode layer; the second groove passes through the perovskite functional layer; and the third groove passes through the top electrode layer.

Images