A high temperature reaction equipment

Abstract

The present invention discloses high-temperature reaction equipment, comprising: a reaction chamber; a base, the base is arranged at the bottom of the reaction chamber for carrying a substrate, the base comprising a central area, a base plate area and an edge area arranged in sequence along the radial direction close to the side wall of the reaction chamber; at least one first thermal insulation plate, the first thermal insulation plate is arranged on the top surface of the reaction chamber, a baffle, the baffle is opposite to the base, the first thermal insulation plate is arranged on the side of the baffle away from the base, an air flow gap is provided between the first thermal insulation plate and the baffle, the first thermal insulation plate comprises a plurality of sub-thermal insulation plates, the comprehensive thermal conductivity of the sub-thermal insulation plates corresponding to the base plate area is greater than the comprehensive thermal conductivity of the sub-thermal insulation plates corresponding to the central area and the edge area.

Description

Technical Field

[0001] The present invention relates to the field of semiconductors and pan-semiconductor equipment, and in particular to a high-temperature reaction device. Background Art

[0002] High-temperature reaction equipment typically requires heating components in a high-temperature environment to meet the process requirements of highly uniform temperatures. To ensure optimal process results, uniform temperature distribution across the surface of the heated object is crucial. However, due to complex internal heat transfer pathways and uneven heat dissipation conditions, the surface temperature distribution often remains uneven, resulting in less-than-ideal process results.

[0003] Therefore, the need to develop a high-temperature reaction equipment with a new structure to improve the uniformity of temperature distribution is a technical problem that needs to be solved urgently in this field. Summary of the Invention

[0004] The present invention aims to solve one of the technical problems in the related art to a certain extent. To this end, the present invention provides a high-temperature reaction device.

[0005] In order to achieve the above-mentioned object, as a first aspect of the present invention, a high-temperature reaction device is disclosed, comprising:

[0006] reaction chamber;

[0007] A susceptor, the susceptor being arranged at the bottom of the reaction chamber for supporting the substrate, the susceptor comprising a central region, a base plate region, and an edge region sequentially arranged radially close to the sidewall of the reaction chamber;

[0008] at least one first heat insulation plate, which is provided on the top surface of the reaction chamber,

[0009] The baffle is opposite to the base, the first thermal insulation board is arranged on a side of the baffle away from the base, an airflow gap is formed between the first thermal insulation board and the baffle, the first thermal insulation board includes a plurality of sub-thermal insulation boards, the comprehensive thermal conductivity of the sub-thermal insulation boards corresponding to the base plate area is greater than the comprehensive thermal conductivity of the sub-thermal insulation boards corresponding to the central area and the edge area, wherein,

[0010] The comprehensive thermal conductivity of the sub-insulation board satisfies the following formula:

[0011] k eff =(t1*k1 / t3)+(t2*k2 / t3)

[0012] Among them, k effis the comprehensive thermal conductivity, t1 is the thickness of the sub-insulation board, k1 is the thermal conductivity of the sub-insulation board, t2 is the thickness of the airflow gap, k2 is the thermal conductivity of the airflow in the airflow gap, and t3 is the total thickness of the sub-insulation board and the airflow gap.

[0013] Further, the thickness of the sub-insulation board corresponding to the base plate area is greater than the thickness of the sub-insulation board corresponding to the central area and the edge area.

[0014] Furthermore, the material of the sub-insulation plate includes at least one of graphite felt, ceramic and metal; the thermal conductivity of the material of the sub-insulation plate corresponding to the base plate area is greater than the thermal conductivity of the material of the sub-insulation plate corresponding to the central area and the edge area; and the material of the baffle includes graphite felt and / or quartz.

[0015] Furthermore, a second heat insulation plate is provided on the side wall of the reaction chamber, and the second heat insulation plate is arranged around the base, so that the heat emitted from the base to the side wall is blocked by the second heat insulation plate.

[0016] Furthermore, the second heat insulation board includes a longitudinal heat insulation board and a transverse heat insulation board, and the longitudinal heat insulation board and the transverse heat insulation board are connected to form a whole.

[0017] The longitudinal heat insulation board extends around the base and is spaced apart from the side wall of the reaction chamber so as to separate the base from the side wall.

[0018] The transverse insulation plate is arranged in a ring shape at the top of the reaction chamber, so that the second insulation plate has a cavity opening at the top, and the first insulation plate covers the cavity opening, so that an insulation space is formed between the first insulation plate, the second insulation plate and the base.

[0019] Furthermore, the surface roughness of the sub-heat insulation board corresponding to the base plate area is greater than the surface roughness of the sub-heat insulation board corresponding to the central area and the edge area.

[0020] Furthermore, in the radial direction of the first heat insulation board, the plurality of sub-heat insulation boards are arranged in a ring shape with the central area as the center, and a first interval is provided between adjacent sub-heat insulation boards;

[0021] In the circumferential direction of the first heat insulation panel, at least one of the sub-heat insulation panels includes a plurality of annular sub-panels, and adjacent annular sub-panels have a second interval in the circumferential direction of the first heat insulation panel.

[0022] Furthermore, the first interval satisfies the following formula:

[0023]

[0024] Wherein, d is the first interval,

[0025] α is the thermal expansion coefficient of the material of the sub-insulation board,

[0026] L is the radial dimension of the sub-insulation board along the first insulation board,

[0027] ∆T is the difference between the operating temperature and the installation temperature

[0028] δ is the safety margin, and the range of δ is between 0.1 mm and 0.5 mm;

[0029] The second interval satisfies the following formula:

[0030]

[0031] Wherein, d2 is the second interval

[0032] L2 is the dimension of the sub-insulation board along the circumference of the first insulation board.

[0033] Furthermore, a deformable heat conducting member is provided in the first interval and the second interval.

[0034] Furthermore, the annular partition plate is provided with a plurality of first mounting holes for installing screws, and the plurality of first mounting holes are arranged at a third interval along the circumference of the first heat insulation plate, so that the plurality of annular partition plates are detachably fixed to the cavity wall of the reaction chamber through the screws and the first mounting holes.

[0035] Furthermore, the third intervals of the plurality of first mounting holes along the circumference of the first heat insulation board are consistent, and the third intervals satisfy the following formula:

[0036] d3 ≥ 3×t4+D1

[0037] Wherein, d3 is the third interval, t4 is the thickness of the annular partition plate, and D1 is the diameter of the first mounting hole.

[0038] Furthermore, at least one second mounting hole is formed on the annular partition plate so that a detection probe of a temperature sensor passes through the second mounting hole to detect the temperature inside the reaction chamber.

[0039] Furthermore, the second mounting holes are located at intervals between the plurality of annular sub-plates and correspond to the base plate area;

[0040] The second mounting hole comprises a tapered hole, and / or an inner wall of the second mounting hole has a polished surface to increase reflectivity, and / or a heat insulating sleeve is nested in the second mounting hole;

[0041] The surface roughness of the annular split plate with the second mounting hole is greater than the surface roughness of the annular split plate without the second mounting hole.

[0042] Furthermore, the high-temperature reaction equipment further includes a spray module, the spray module including an air inlet pipe body and a spray head, the air inlet pipe body being connected to the spray head, the air inlet pipe body having at least one air inlet channel, the spray head having a spray surface, the spray surface having a plurality of spray holes, the air inlet channel being connected to the spray holes, so that the gas in the air inlet channel is sprayed toward the reaction chamber through the spray surface;

[0043] The first heat insulation board is provided with a spray installation hole, and the air inlet pipe body passes through the cavity wall of the reaction cavity and the corresponding spray installation hole, so that the spray head is arranged on a side of the first heat insulation board close to the base.

[0044] Furthermore, the reaction chamber includes a first chamber cover arranged at the top, the first chamber cover has an outer surface and an inner surface arranged opposite to each other, the first heat insulation plate is arranged on the inner surface, and a plurality of first liquid-cooling channels are arranged in the first chamber cover, and the plurality of first liquid-cooling channels are arranged along the radial direction of the base, the inner surface corresponds to the front side of the base, and the number of the first liquid-cooling channels corresponding to the base plate area is greater than the number of the first liquid-cooling channels corresponding to the central area and the edge area.

[0045] The high-temperature reaction equipment provided in the present application effectively reduces heat loss by providing first thermal insulation plates with different thermal conductivities according to the temperature differences between the central area, base plate area and edge area of ​​the base, so that the surface of the processed object on the base has a more uniform temperature distribution during the heating process, thereby making the process reaction more uniform and consistent on the surface of the object; through the structural design between the first thermal insulation plate and the baffle, the air flow gap generated can further regulate the thermal conductivity of different positions of the cavity, and the first thermal insulation plate is divided into sub-thermal insulation plates in different temperature zones, further increasing the fine control of the temperature of a single area, ensuring that the temperature gradients in different areas are more consistent, promoting the reactants to react at the optimal temperature, reducing the occurrence of side reactions, and thus improving the uniformity and consistency of the product.

[0046] These features and advantages of the present invention will be further disclosed in the following detailed description and accompanying drawings. The preferred embodiments and means of the present invention will be fully illustrated in conjunction with the accompanying drawings, but are not intended to limit the technical solutions of the present invention. Furthermore, although multiple features, elements, and components may be present in each of the following text and accompanying drawings, they may be labeled with different symbols or numbers for convenience, but all represent components with the same or similar structure or function. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] The present invention will be further described below in conjunction with the accompanying drawings:

[0048] Figure 1 This is a schematic structural diagram of an embodiment of the high-temperature processing equipment provided by the present invention;

[0049] Figure 2 This is a schematic structural diagram of an embodiment of the high-temperature processing equipment provided by the present invention;

[0050] Figure 3 This is a schematic structural diagram of an embodiment of the high-temperature processing equipment provided by the present invention;

[0051] Figure 4 This is a schematic structural diagram of an embodiment of the high-temperature processing equipment provided by the present invention;

[0052] Figure 5 This is a schematic structural diagram of an embodiment of the high-temperature processing equipment provided by the present invention;

[0053] Figure 6 is a cross-sectional schematic diagram of an embodiment of the corresponding relationship between the first heat insulation board and the base provided by the present invention;

[0054] Figure 7 is a top view of an embodiment of the first heat insulation board provided by the present invention;

[0055] Figure 8 This is a temperature simulation data analysis diagram of an embodiment of the reaction chamber provided by the present invention;

[0056] Figure 9 This is a temperature simulation data analysis diagram of another embodiment of the reaction chamber provided by the present invention.

[0057] Description of Reference Numerals

[0058] 1: High-temperature reaction equipment; 2: First chamber cover; 3: Reaction chamber; 4: Second chamber cover; 5: First thermal insulation board; 6: Baffle; 7: Spray module; 8: Base; 9: Heating source; 11: Support cylinder;

[0059] 20: first liquid cooling channel; 30: side wall; 31: thermal insulation bottom plate; 32: second thermal insulation plate; 33: thermal insulation space; 301: side cooling channel; d: first interval; d2: second interval;

[0060] 50: Sub-insulation board; 51: Annular sub-board; 52: First mounting hole; 53: Screw; 511: Second mounting hole; 70: Sprinkler head; 71: Inlet pipe body; 710: Inlet channel;

[0061] 80: base plate area; 81: center area; 82: edge area; 810: spray installation hole;

[0062] 500: high temperature zone; 501: first low temperature zone; 502: second low temperature zone; 91: support seat. DETAILED DESCRIPTION

[0063] The following describes embodiments of the present invention in detail, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described in the embodiments are intended to explain the present invention and are not to be construed as limiting the present invention.

[0064] References in this specification to "one embodiment," "an example," or "an example" mean that a particular feature, structure, or characteristic described in connection with the embodiment itself can be included in at least one embodiment disclosed herein. The appearances of the phrase "in one embodiment" in various places in the specification are not necessarily all referring to the same embodiment.

[0065] The inventors of this application have discovered that high-temperature reaction equipment (such as high-temperature reactors, vacuum furnaces, etching equipment in semiconductor manufacturing equipment, CVD equipment, PVD equipment, etc.) is widely used in industrial production, especially in the fields of semiconductor manufacturing and material synthesis. These devices usually need to heat the heating components in a high-temperature environment to meet the requirements of high-precision processes. To ensure the excellent process results, the uniformity of the temperature distribution on the surface of the object to be heated is crucial. However, due to factors such as the complex heat transfer paths within the equipment and uneven heat dissipation conditions, the temperature distribution on the surface of the object to be heated is often uneven, resulting in less than ideal process results.

[0066] At present, the commonly used temperature uniformity control methods in high-temperature reaction equipment include: (1) improving temperature uniformity by optimizing the layout and power distribution of the heating source (such as resistance heating, infrared heating, electromagnetic induction heating, etc.); (2) setting water cooling channels on the cavity wall and end cover, controlling the temperature of the cavity wall and end cover through the cooling medium, and then controlling the heat transfer effect from the inside of the cavity to the outside, improving temperature uniformity; (3) setting gas guide plates inside the cavity to guide the gas flow to enhance and improve the heat transfer effect. Although the existing technology has improved the temperature uniformity to a certain extent, the following problems still exist: (1) Uneven heat transfer path. The heat radiated by the heating source is transferred outward through the object to be heated, the air flow, and the end cover, but due to the complex heat transfer path, the surface temperature distribution of the object to be heated is uneven. (2) Uneven heat dissipation conditions. The water cooling channel on the side wall of the cavity may cause the temperature in the middle of the object to be heated to be high and the temperature on both sides to be low, further exacerbating the uneven temperature distribution. (3) Limitations of the insulation board design. Most existing thermal insulation panels are integral structures, making it difficult to perform local optimization to meet the heat dissipation needs of different areas, and are inconvenient to install and maintain.

[0067] The present invention aims to solve the problem of uneven surface temperature distribution of the object to be heated in high-temperature reaction equipment. By providing a detachable heat insulation plate and a corresponding heat transfer optimization method, the heat transfer uniformity inside the equipment is improved, thereby improving the quality of the process effect.

[0068] To this end, as a first aspect of the present application, a high temperature reaction device 1 is disclosed, such as Figures 1 to 6 As shown, the high temperature reaction equipment 1 includes:

[0069] Reaction chamber 3;

[0070] The base 8 is disposed at the bottom of the reaction chamber 3 for supporting the substrate. The base 8 includes a central area 81, a base plate area 80, and an edge area 82, which are sequentially arranged radially close to the sidewall 30 of the reaction chamber 3.

[0071] At least one first heat insulation board 5 is provided on the top surface of the reaction chamber 3.

[0072] The baffle 6 is opposite to the base 8. The first heat insulation board 5 is arranged on the side of the baffle 6 away from the base 8. There is an airflow gap between the first heat insulation board 5 and the baffle 6. The first heat insulation board 5 includes a plurality of sub-heat insulation boards 50. The comprehensive thermal conductivity of the sub-heat insulation board 50 corresponding to the base plate area 80 is greater than the comprehensive thermal conductivity of the sub-heat insulation board 50 corresponding to the central area 81 and the edge area 82.

[0073] The comprehensive thermal conductivity of the sub-insulation board 50 satisfies the following formula:

[0074] k eff =(t1*k1 / t3)+(t2*k2 / t3)

[0075] Among them, k eff is the comprehensive thermal conductivity, t1 is the thickness of the sub-insulation board, k1 is the thermal conductivity of the sub-insulation board, t2 is the thickness of the airflow gap, k2 is the thermal conductivity of the airflow in the airflow gap, and t3 is the total thickness of the sub-insulation board 50 and the airflow gap.

[0076] The present invention first performs a temperature simulation analysis on the base 8 and finds that its actual temperature distribution is different. The base 8 is divided into different temperature zones, and the heat conduction of the heating device and the insulation device are adjusted accordingly, so that different zones can be heated to the same degree according to the regional temperature differences. For example, the base plate area 80 has a higher temperature, while the temperatures of the central area 81 and the edge area 82 are relatively low. Different areas have different requirements for heat conduction, which requires the process space above the base plate area 80 to improve its heat dissipation capacity to balance the temperature difference between the center and edge areas 82 of the base 8. Therefore, the first thermal insulation board 5 is also divided into multiple sub-insulation boards 50 to facilitate targeted heat adjustment of the process space in different areas of the base 8. Combined with the existence of the first thermal insulation board 5 and the airflow gap, the absorption and heat dissipation can be adjusted by adjusting the comprehensive thermal conductivity of the sub-insulation board 50. For example, the thickness of the airflow gap at the corresponding position of the sub-insulation board 50, the airflow thermal conductivity at the corresponding position of the sub-insulation board 50, the difference in material thermal conductivity between different sub-insulation boards 50, the thickness of the sub-insulation board 50, etc. Various methods can accurately control the local temperature gradient, thereby improving the temperature uniformity and stability during the reaction process. The comprehensive thermal conductivity of the sub-insulation panels 50 is designed using a formula to ensure that the sub-insulation panels 50 corresponding to the base plate area 80 have higher thermal conductivity, thereby achieving more efficient heat transfer and meeting the requirements of high-temperature reactions. This design ensures efficient thermal conductivity of the sub-insulation panels 50 in the base plate area 80 while reducing the thermal conductivity of the sub-insulation panels 50 in the central area 81 and edge areas 82, thereby enhancing temperature distribution control.

[0077] The provision of the first thermal insulation board 5 improves the heat exchange between the base 8 and the external environment, maintains uniform high temperature conditions, and ensures reaction efficiency. It can also protect other parts of the equipment from high temperature and extend the life of the equipment. The design of the airflow gap allows air or other gases to flow between the thermal insulation board and the baffle 6, which helps to further reduce the conduction of heat and improve the thermal insulation effect. Reasonable airflow can effectively reduce heat loss while providing the necessary cooling effect to prevent overheating. Combined with the presence of the first thermal insulation board 5 and the airflow gap, efficient and highly selective thermal management can be achieved during the reaction process, promoting the reaction rate and improving the synthesis efficiency of the product. Due to the targeted temperature design of different areas, a reasonable distribution of heat can be achieved, ensuring that the reactants react at the optimal temperature, thereby reducing side reactions and improving the quality of the product.

[0078] It should be emphasized that the present application introduces a baffle 6 and the first thermal insulation board 5 to form an airflow gap. This is because the first thermal insulation board 5 of the present application is an arrangement of multiple sub-insulation boards 50. The regional arrangement may cause problems of high thermal resistance or thermal short circuit at the junction of the regions. In order to reduce the heat dissipation effect of the partitions of the first thermal insulation board 5, a baffle 6 is installed underneath it so that the heat emitted by the base 8 is first absorbed by the baffle 6 and then transferred to the first thermal insulation board 5 through the airflow gap, thereby reducing thermal resistance and thermal short circuit effects. Secondly, the design of the baffle also takes into account the actual process conditions of the first thermal insulation board 5. For example, in some high-temperature heating processes, due to the multiple sub-insulation boards 50 of the first thermal insulation board 5, Different materials may be set to achieve different thermal conductivity effects, but multiple materials may produce pollutants on the surface in a high-temperature environment, which may fall on the base 8 or in the cavity and cause pollution. In addition, high-temperature process gases are more likely to react with the surfaces of sub-insulation boards 50 made of multiple materials. Taking into account the above-mentioned actual usage conditions, the present application installs a baffle 6 between the first insulation board 5 and the base 8, which can not only form an airflow gap with the first insulation board 5 for adjusting the thermal conductivity, but also reduce the thermal resistance and thermal short-circuit effect at the junction of multiple sub-insulation boards 50, and prevent sub-insulation boards 50 of different materials from polluting the base 8, and avoid process gas from forming on the surface of the sub-insulation board 50.

[0079] The present application can also be configured without the baffle 6, that is, the first thermal insulation board 5 can be directly aligned with the base 8, and the air flow layer between the first thermal insulation board 5 and the base 8 can be used to form an adjustable air flow thermal conductivity. The first thermal insulation board 5 can also be spaced apart from the top surface of the reaction chamber 3, thereby forming an air flow gap between the first thermal insulation board 5 and the top surface.

[0080] It is worth noting that this application utilizes a combination of the first thermal insulation board 5 and the airflow gap for comprehensive heat conduction, both of which are indispensable. This is because the thermal conductivity of gases is generally much lower than that of solids. Heat dissipated from the base 8 first passes through the airflow gap with a low thermal conductivity. The airflow gap allows for initial, rough adjustment of heat distribution at different base 8 locations. Further, heat is transferred to the first thermal insulation board 5 with a higher thermal conductivity, accelerating heat transfer and increasing heat flow, allowing for further fine-tuned heat dissipation by the various sub-insulation boards 50.

[0081] The present application does not impose any special restrictions on the shape of the first heat insulation board 5, and the shape can be designed to be non-circular as required. In order to facilitate installation and maintenance, and to meet the heat transfer optimization requirements of the reaction chamber 3, the first heat insulation board 5 is not limited to a circular or square shape. In some embodiments, since the first heat insulation board 5 corresponds to the base 8, the base 8 structure is as follows: Figure 3 、 Figure 4 and Figure 7 As shown, the first heat insulation board 5 is preferably circular, which can have a better heat dissipation response.

[0082] The present application does not impose any particular restrictions on how the first heat insulation board 5 is divided into multiple sub-heat insulation boards 50. They can be arranged in multiple rows and columns at equal intervals, or in multiple circular arrangements, or arranged in multiple fan-shaped arrangements with the center of the first heat insulation board 5 as the center. Since the temperature difference of the base 8 is mainly reflected in the radial direction of the base 8, it is preferred that the multiple sub-heat insulation boards 50 are arranged in a ring with the central area 81 as the center along the radial direction of the first heat insulation board 5, such as Figure 4 and Figure 7 As shown, there is a first interval d between adjacent sub-insulation panels 50; in the circumferential direction of the first insulation panel 5, at least one sub-insulation panel 50 includes a plurality of annular sub-panels 51, and adjacent annular sub-panels 51 have a second interval d2 along the circumferential direction of the first insulation panel 5.

[0083] The spacing between the sub-insulation panels 50 is designed to offset the thermal expansion effect between the sub-insulation panels 50 when the panels are segmented. Sub-insulation panels 50 made of different materials will experience different thermal expansion at high temperatures. The spacing offsets this thermal expansion, preventing the sub-insulation panels 50 from squeezing against each other due to thermal expansion, which could lead to thermal stress.

[0084] The gap is used to relieve thermal expansion stress and avoid local temperature differences caused by interruption of the heat flow path. Preferably, the first gap satisfies the following formula:

[0085]

[0086] Where d is the first interval,

[0087] α is the thermal expansion coefficient of the material of the sub-insulation board 50,

[0088] L is the width of the sub-insulation board 50 along the radial direction of the first insulation board 5,

[0089] ∆T is the difference between the operating temperature and the installation temperature

[0090] δ is a safety margin, and the range of δ is between 0.1 mm and 0.5 mm.

[0091] The second interval satisfies the following formula:

[0092]

[0093] Wherein, d2 is the second interval

[0094] L2 is the dimension of the sub-insulation board along the circumference of the first insulation board.

[0095] In some embodiments, if the material of the sub-insulation board 50 corresponding to the base plate area 80 is copper, the thermal expansion coefficient of copper is 17×10-6 / °C, the material of the adjacent sub-insulation board 50 is aluminum (corresponding to the central area 81 or the edge area 82), and the thermal expansion coefficient of aluminum is 23×10 -6 / °C, assuming that the outer diameter of the first thermal insulation board 5 is 800 mm and the inner diameter is 100 mm, and the sub-thermal insulation boards 50 are arranged in an annular shape with 5 rings, the radial dimension of the annular sub-board 51 on one side is 70 mm. The first spacing of the sub-thermal insulation boards 50 is calculated based on the material with the maximum thermal expansion coefficient. The thermal expansion temperature difference is considered based on the maximum difference between the operating temperature and the installation temperature (i.e., the process temperature of the cavity and the overall temperature of the cavity at room temperature, assuming 500°C). Based on the thermal expansion coefficient of aluminum alloy, the first spacing between any sub-thermal insulation boards 50 satisfies:

[0096] d≥23×10 -6 ×70×500+0.1=0.905 mm, that is, the radial first interval between any sub-insulation boards 50 should be greater than or equal to 0.905 mm to meet the thermal deformation compensation requirement of the sub-insulation boards 50.

[0097] In some embodiments, because adjacent sub-heat shield panels 50 with high thermal expansion coefficients (copper / aluminum) require a larger spacing, which results in a disruption of the radial heat flow path, the spacing should be as small as possible while still meeting deformation requirements. Based on the formula satisfied by the first spacing, the radial dimension (L) of a single sub-heat shield panel 50 can be reduced by increasing the number of sub-heat shield panels 50, thereby reducing the radial temperature difference and, thus, reducing the first spacing d.

[0098] In other embodiments, the first gap can be reduced by using a material with a low thermal expansion coefficient as the sub-insulation board 50, such as graphite felt. In other embodiments, the sub-insulation board 50 is made of a mixed material, and the materials of adjacent sub-insulation boards 50 are different (such as copper and graphite felt spliced ​​together). In this case, the first gap is calculated based on the material with a higher thermal expansion coefficient. Since a larger first gap increases the impact of heat flow path interruption, a deformable thermal conductive member is provided in the first gap. The deformable thermal conductive member can act as a buffer material to prevent expansion and deformation when the sub-insulation board 50 expands due to heat, and prevent mutual squeezing. At the same time, the thermal conductivity of the material of the deformable thermal conductive member is higher than that of gas, which can transfer heat faster and reduce interruption of the heat flow path. The gap can be compensated for thermal resistance. Preferably, a flexible thermal conductive pad (such as graphite foil) can be filled in the first gap to compensate for thermal resistance. For another example, a metal corrugated strip can be filled in the first gap to cover the gap between the gaps, allowing deformation while maintaining the heat conduction path.

[0099] The present application does not impose any special restrictions on the number of annular sub-insulation panels 50 and the number of annular sub-panels 51. In some embodiments, in the radial direction, the annular sub-insulation panel 50 can be divided into 5 to 10 circles, more preferably 3 to 6 circles. In the circumferential direction, each sub-insulation panel 50 can include 3 to 6 annular sub-panels 51, and each annular sub-panel 51 is evenly spaced. Figure 4 and Figure 7 In other embodiments, for the load-bearing area of ​​the first thermal insulation board 5, that is, the fixed connection between the first thermal insulation board 5 and the top of the reaction chamber 3, a plurality of first mounting holes 52 are generally provided on the surface of the first thermal insulation board 5. Screws 53 are passed through the first mounting holes 52 and the chamber wall to achieve fixation. In this case, the sub-thermal insulation board 50 with the first mounting holes 52 can reduce the number of annular sub-plates 51 to enhance the regional rigidity of the structure. For example, the sub-thermal insulation board 50 corresponding to the central area 81 of the first thermal insulation board 5 is evenly divided into 3 to 6 annular sub-plates 51 in the circumferential direction. The sub-thermal insulation board 50 near the edge area 82 has a larger annular area and is heavier. Therefore, more first mounting holes 52 are required to be provided to fix it to the chamber wall. Therefore, each circle of thermal insulation boards 50 is evenly divided into 1 to 3 annular sub-plates 51 in the circumferential direction.

[0100] As an optional embodiment, the annular plate 51 is provided with a plurality of first mounting holes 52 for mounting screws 53. Figures 1 to 5 As shown, multiple first mounting holes 52 are arranged at a third interval along the circumference of the first thermal insulation plate 5, so that the multiple annular sub-plates 51 are removably fixed to the wall of the reaction chamber 3 through screws 53 and the first mounting holes 52. In some embodiments, the first mounting holes 52 can be arranged in a circular pattern (e.g., six screws evenly spaced at 60° or eight screws evenly spaced at 45°) to balance local thermal resistance differences. While ensuring structural strength, the number of screws can be reduced (preferably 6 to 12) to minimize thermal short-circuiting effects.

[0101] Preferably, the third intervals of the plurality of first mounting holes 52 along the circumference of the first heat insulation board 5 are consistent, and the third intervals satisfy the following formula:

[0102] d3 ≥ 3×t4+D1

[0103] Wherein, d3 is the third interval, t4 is the thickness of the annular dividing plate 51, and D1 is the diameter of the first mounting hole 52;

[0104] Screws 53 use small diameter screws (e.g., M4 or M5 screws 53) to reduce the cross-sectional area of ​​metal heat conduction and minimize thermal short-circuiting. The thermal conductivity of the material of screws 53 is close to that of the annular plate 51 (e.g., titanium alloy), minimizing excess heat conduction. The length of screws 53 is preferably sufficient for thread engagement (e.g., 1.5 times the screw diameter) to minimize excess metal heat conduction paths.

[0105] As one of the key points of the present invention, the present application does not impose any special restrictions on how to set the thermal conductivity of the first thermal insulation board 5. It only needs to satisfy the thermal conductivity relationship corresponding to different positions of the base 8. The comprehensive thermal conductivity can be determined by the sub-insulation board 50 and the airflow layer. For example, in some embodiments, the comprehensive thermal conductivity of the first thermal insulation board 5 can be adjusted by adjusting the thickness of the sub-insulation board 50. Specifically, the thickness of the sub-insulation board 50 corresponding to the base plate area 80 is greater than the thickness of the sub-insulation board 50 corresponding to the central area 81 and the edge area 82. This structure greatly increases the thermal conductivity of the sub-insulation board 50 corresponding to the base plate area 80, that is, t1 increases. At the same time, due to the increase in its thickness, the airflow gap at the corresponding position becomes thinner, that is, t2. The airflow path becomes shorter, which reduces the insulation effect formed by the airflow gap, further enhancing the heat transfer at this position. Figure 6 As shown, in a specific embodiment, the base 8 is divided into a central area 81, a base plate area 80 and an edge area 82, and the corresponding first thermal insulation board 5 is divided into a first low-temperature area 501, a high-temperature area 500 and a second low-temperature area 502. The high-temperature area 500 can thicken the sub-thermal insulation board 50 (to 15 mm), and the first low-temperature area 501 and the second low-temperature area 502 can thin the sub-thermal insulation board 50 (to 5 mm). Alternatively, the high-temperature area 500 can use a convex sub-thermal insulation board 50 to increase thermal conductivity, and the first low-temperature area 501 and the second low-temperature area 502 can use a flat sub-thermal insulation board 50 to increase thermal resistance.

[0106] In other embodiments, the material of the sub-insulation plate 50 includes at least one of graphite felt, ceramic, and metal. The thermal conductivity of the material of the sub-insulation plate 50 corresponding to the base plate region 80 is greater than that of the material of the sub-insulation plate 50 corresponding to the central region 81 and the edge region 82. Metal has a relatively high thermal conductivity, while ceramic and graphite felt have relatively low thermal conductivity, providing better insulation. These materials can be used according to specific process requirements. For example, if the reaction chamber 3 is a cold-walled type, where the temperature difference between the interior and the wall is greater during heating, ceramic, which has a better insulation effect, can be selected as the first insulation plate 5. This allows internal heat to be retained within the chamber and not quickly dissipated outward through the first insulation plate 5. In one specific embodiment, the high-temperature zone 500 uses a high-thermal conductivity material (e.g., copper or aluminum) to accelerate heat dissipation, while the first and second low-temperature zones 501, 502 use a low-thermal conductivity material (e.g., graphite felt) to suppress heat dissipation.

[0107] According to the heat conduction formula Q1=-k△T / L (where Q1 is the heat flux density, k is the thermal conductivity, △T is the temperature difference between two points, and L is the distance between the two points), materials with different thermal conductivities are used as the sub-insulation board 50 (such as copper, aluminum, graphite felt, etc., with thermal conductivity of copper>aluminum>graphite felt) for temperature differences in different areas. This can compensate for the heat dissipation differences in different areas and improve the temperature uniformity of the substrate to be heated.

[0108] As a specific embodiment, the material of the baffle 6 includes graphite felt and / or quartz. In addition to forming an airflow gap with the first thermal insulation plate 5, the graphite felt and quartz have lower reactivity (chemical reaction passivity), that is, it is more difficult for process active gases to react or deposit on the surface of the baffle 6.

[0109] The present invention can also improve the heat transfer effect by combining the spacing, thickness, material, and block structure of the aforementioned sub-insulation panels 50. Specifically, by controlling the surface absorptivity, material, structure, assembly method, and installation location of the sub-insulation panels 50, the heat transfer effect can be optimized, thereby improving the temperature distribution uniformity of the high-temperature reaction apparatus 1.

[0110] A key aspect of the present invention also involves surface treatment of the sub-insulation panels 50. Based on the fundamental radiation absorption formula Q2 = βG (where Q2 is the absorbed radiation heat flux per unit area, β is the surface absorptivity, and G is the incident radiation intensity), the surface absorptivity of the sub-insulation panels 50 can be controlled by zoning, thereby varying the heat absorption capacity of different regions of the sub-insulation panels 50 and optimizing overall thermal conductivity, thereby achieving a uniform temperature across the entire substrate being heated. The surface absorptivity of the sub-insulation panels 50 can be adjusted by controlling the surface roughness, i.e., by applying various surface treatments, including polishing, oxidation, and sandblasting. Surface polishing can also be further controlled by applying various surface polishing methods, such as mechanical polishing from coarse to fine to achieve progressively finer surface roughness and corresponding surface absorptivity. For the entire first insulation panel 5, surface treatment can be performed on the sub-insulation panels 50 in either the radial or circumferential directions. For the sub-insulation panels 50, surface treatment can be applied directly to each sub-insulation panel 50. Preferably, the surface roughness of the sub-insulation panels 50 corresponding to the base plate area 80 is greater than that of the sub-insulation panels 50 corresponding to the central area 81 and the edge area 82. This results in a higher surface absorptivity for the sub-insulation panels 50 in the high-temperature area 500, making it easier to absorb heat. The first and second low-temperature areas 501, 502 have lower surface absorptivity, making them less likely to absorb heat, with more heat being reflected. In a specific embodiment, the first and second low-temperature areas 501, 502 are mirror-polished, with a surface roughness between 0.01 μm and 0.1 μm and an absorptivity between 0.1 and 0.3. The high-temperature area 500 is sandblasted, with a surface roughness between 5 μm and 10 μm and an absorptivity between 0.7 and 0.9.

[0111] In other embodiments, the present invention optimizes the temperature uniformity of the substrate to be heated within the high-temperature reaction apparatus 1 by synergistically regulating the overall thermal conductivity (coarse adjustment) and the surface absorptivity (fine adjustment). The following provides specific steps for coarsely adjusting the thermal conductivity of the sub-insulation plate 50 using the overall thermal conductivity and then fine-tuning the thermal conductivity using the surface absorptivity.

[0112] First, the first heat insulation plate 5 is divided into multiple sub-heat conducting plates in the radial and circumferential directions according to the areas of the base 8 corresponding to different temperatures. The shapes and spacing of the sub-heat conducting plates are as described above, and the sub-heat conducting plates are divided into a high temperature area 500, a first low temperature area 501, and a second low temperature area 502.

[0113] The second step is to select the material of the sub-insulation board 50. The high temperature zone 500 uses a high thermal conductivity material, and the first low temperature zone 501 and the second low temperature zone 502 use a low thermal conductivity material;

[0114] The third step is to set the thickness of the sub-insulation board 50. The sub-insulation board 50 in the high temperature zone 500 is thickened or set to a convex shape, and the sub-insulation board 50 in the first low temperature zone 501 and the second low temperature zone 502 is thinned or set to a flat shape.

[0115] After completing the above settings, the heat dissipation effect of the first heat shield 5 can be roughly adjusted. The distribution effect can be verified through simulation or experiment, preferably simulation to verify the temperature difference distribution effect. If the effect is higher than expected (e.g., temperature difference > ±10°C), the material or block ratio needs to be readjusted. Experimentation requires actual manufacturing and measurement of the substrate temperature distribution using an infrared thermal imager or thermocouple.

[0116] Step 4: Based on the above temperature distribution, the surface absorptivity of the sub-insulation board 50 is fine-tuned (micro-radiation optimization). According to the radiation absorption formula q = βG, the absorptivity β is adjusted to balance the amount of heat absorbed. The high-temperature zone 500 is treated with a roughened surface to increase the surface absorptivity and heat absorption. The first and second low-temperature zones 501, 502 are treated with a smoothed surface to reduce the surface absorptivity and heat absorption.

[0117] Step 5: Further adjust the surface absorption rate value of the sub-insulation board 50 and perform simulation verification to ensure that the temperature difference further meets the requirements;

[0118] Step 6: Based on the simulation results, the actual sub-insulation panels 50 are partitioned and processed. The entire first insulation panel 5 is divided into different areas in the radial / circumferential direction and processed to different roughness levels. Alternatively, a single sub-insulation panel 50 is directly processed to achieve different surface roughness levels.

[0119] The seventh step is to verify the effect or make further fine adjustments. After the actual production and installation is completed, the base plate temperature is measured again. If there is still a temperature difference that needs to be avoided locally, the specific sub-insulation board 50 can be subjected to secondary surface treatment (such as local sandblasting).

[0120] In addition, in order to further improve the heat insulation or heat dissipation effect, the present application can also install a second heat insulation plate 32 on the side wall 30 or bottom of the reaction chamber 3. As a specific implementation method, a second heat insulation plate 32 is provided on the side wall of the reaction chamber 3, and the second heat insulation plate 32 is arranged around the base 8 so that the heat dissipated from the base 8 to the side wall is blocked by the second heat insulation plate 32.

[0121] The present application does not specifically limit the structure of the second thermal insulation board 32. In some embodiments, the second thermal insulation board 32 includes a longitudinal thermal insulation board and a transverse thermal insulation board, which are connected to form an integral body. The longitudinal thermal insulation board extends around the base 8 and is spaced apart from the sidewalls of the reaction chamber 3 to separate the base 8 from the sidewalls. The transverse thermal insulation board is arranged in an annular shape at the top of the reaction chamber 3, so that the second thermal insulation board 32 has a cavity opening at the top. The first thermal insulation board 5 covers the cavity opening, so that an insulating space 33 is formed between the first thermal insulation board 5, the second thermal insulation board 32, and the base 8. The material of the second thermal insulation board can be the same as or different from that of the first thermal insulation board.

[0122] The first and second insulation boards 5 and 32 do not need to completely cover the cavity wall surface. Depending on actual heat transfer requirements, the overall outer diameter of the first insulation board 5 can be reduced, or the middle portion can be removed to allow direct contact between the airflow gap and the cavity wall. This reduces heat dissipation in areas without insulation boards by leveraging the fluid's low thermal conductivity. The overall height of the second insulation board 32 can be reduced so that it does not completely cover the cavity sidewalls, thus modifying its insulation effect on the base disk area.

[0123] As a specific embodiment, at least one second mounting hole 511 is further provided on the annular partition plate 51 , so that a detection probe of a temperature sensor passes through the second mounting hole 511 to detect the temperature inside the reaction chamber 3 .

[0124] The second mounting holes 511 are located in the intervals between the multiple annular sub-plates 51 and correspond to the base plate area 80 on the base. The arrangement of the second mounting holes 511 in the intervals can utilize the existing structural spacing to reduce the need for additional openings. The diameter of the second mounting holes 511 is preferably 3 mm to 6 mm to meet the field of view of the infrared probe. The second mounting holes 511 are tapered, and / or the inner walls of the second mounting holes 511 are polished to increase reflectivity and reduce interference from thermal radiation reflection, thereby avoiding the formation of local hot spots. The second mounting holes 511 can also be nested with thermal insulation sleeves (such as ceramic bushings) to block additional heat dissipation caused by air convection. To offset the local heat dissipation differences caused by the openings, the surface roughness of the annular sub-plates 51 with the second mounting holes 511 is greater than the surface roughness of the annular sub-plates 51 without the second mounting holes 511. Alternatively, the surface absorptivity of the sub-insulation plate 50 is increased (e.g., from 0.3 to 0.5) within 3 mm to 5 mm around the second mounting holes 511 to compensate for heat loss through enhanced radiation absorption.

[0125] The high-temperature reaction equipment 1 also includes a spray module 7, which includes an air inlet pipe body 71 and a spray head 70. The air inlet pipe body 71 is connected to the spray head 70. The air inlet pipe body 71 has at least one air inlet channel 710. The spray head 70 has a spray surface with multiple spray holes on the spray surface. The air inlet channel 710 is connected to the spray holes, so that the gas in the air inlet channel 710 is sprayed onto the reaction chamber 3 through the spray surface; the first insulation board 5 is provided with a spray mounting hole 810, and the air inlet pipe body 71 passes through the cavity wall of the reaction chamber 3 and the corresponding spray mounting hole, so that the spray head 70 is arranged on the side of the first insulation board 5 close to the base 8.

[0126] In a specific embodiment, the reaction chamber 3 includes a first chamber cover 2 disposed at the top. The first chamber cover 2 has an outer surface and an inner surface disposed opposite each other. A first thermal insulation board 5 is disposed on the inner surface. A plurality of first liquid-cooling channels 20 are disposed within the first chamber cover 2. The plurality of first liquid-cooling channels 20 are arranged radially along the base 8, with the inner surface corresponding to the front surface of the base 8. For situations where the base plate has low temperatures at the center and edges and high internal temperatures from the center to the edges, the first thermal insulation board 5 is designed to match the low heat transfer capacity at the center and edges and high internal heat transfer capacity from the center to the edges. Therefore, the water-cooling channels are required to have low heat dissipation capacity at the center and edges and high internal heat dissipation capacity from the center to the edges. Preferably, the number of first liquid-cooling channels 20 corresponding to the base plate area 80 is greater than the number of first liquid-cooling channels 20 corresponding to the center area 81 and the edge area 82. In some embodiments, the reaction chamber 3 includes a second chamber cover 4 disposed at the bottom. The second chamber cover 4 is provided with a plurality of second liquid-cooling channels for cooling the bottom area of ​​the reaction chamber. The side walls of the reaction chamber are further provided with side cooling channels 301 for cooling the side walls. The first chamber cover 2 , the second chamber cover 4 and the side walls 30 together form the reaction chamber 3 .

[0127] A plurality of base plates are provided on the base 8 for carrying a plurality of substrates. The base plates are driven by the base 8 to rotate around the center of the base 8 , and the base plates rotate around their own centers.

[0128] The high-temperature reaction apparatus 1 further includes a heating source 9, which is disposed on the back of the base 8. The heating source 9 heats the base 8, thereby heating the substrate. In some embodiments, the high-temperature reaction apparatus 1 further includes a support base 91, which is disposed within the reaction chamber 3 and is used to support the heating source 9.

[0129] In some embodiments, the high-temperature reaction equipment 1 further includes a heat-insulating bottom plate 31 , and the heat-insulating bottom plate 31 , the first heat-insulating plate, and the second heat-insulating plate are enclosed to form a closed cavity.

[0130] The high-temperature reaction equipment further includes a support tube 11 , and the support tube 11 is used to drive the base 8 to rotate.

[0131] The high-temperature reaction equipment provided by the present application also has the following beneficial effects: Improved temperature uniformity: By optimizing the surface treatment, material selection and structural design of the heat insulation board, the uniformity of the surface temperature of the object to be heated is significantly improved. Improved process effect: The improvement of temperature uniformity directly improves the excellence of the process effect, which is particularly suitable for the fields of high-precision semiconductor manufacturing and material synthesis. Enhanced equipment flexibility: The detachable heat insulation board design makes the equipment easier to install, maintain and locally optimize, and adapt to different process requirements. Reduced risk of thermal deformation: By reasonably designing the minimum thickness of the heat insulation board, the thermal deformation caused by the working environment temperature is effectively reduced, and the stability and service life of the equipment are improved. Energy saving and consumption reduction: The optimized heat transfer path and heat dissipation conditions reduce energy loss and reduce the operating cost of the equipment. The present invention effectively solves the problem of uneven temperature distribution on the surface of the object to be heated in the prior art by providing a high-temperature reaction equipment with a detachable heat insulation board and a heat transfer optimization method based on the heat insulation board, significantly improves the excellence of the process effect and the flexibility of the equipment, and has broad application prospects.

[0132] The present application will be further described below with reference to the embodiments.

[0133] Example

[0134] Example 1

[0135] Step 1: Divide the first insulation board into seven circular sub-insulation boards from the inside out (areas A, B, C, D, E, F, and G from the inside out). The sub-insulation board in area A is made of aluminum alloy with a thickness of 5mm; the sub-insulation boards in areas B, C, and D are made of copper with a thickness of 8mm and the sub-insulation board in area C is 10mm; the sub-insulation boards in areas E, F, and G are made of stainless steel with a thickness of 5mm.

[0136] Step 2: Set the surface of the first heat shield set in the previous step to a rough polished state, set the absorption rate to 0.4, and simulate the temperature difference to be 16°C. Figure 8 Medium corresponds to coarse adjustment.

[0137] Example 2

[0138] Based on Example 1, fine-tuning is performed:

[0139] The surface absorption rate of the sub-insulation board is further set. The surface of the sub-insulation board in areas B, C, and D is sandblasted and the absorption rate is set to 0.7. The surface of the sub-insulation board in areas E, F, and G is polished and the absorption rate is changed to 0.1. The temperature difference obtained by simulation is 11°C. Figure 8 Medium corresponds to fine adjustment.

[0140] Example 3

[0141] Based on Examples 1 and 2, a second heat shield is added to the side wall for further fine-tuning:

[0142] The side wall is made of 2.5mm thick 316 stainless steel with a polished surface and an absorption rate of 0.1. The temperature difference obtained by simulation is 9°C. Figure 8 The middle corresponds to fine tuning.

[0143] Comparative Example

[0144] Comparative Example 1

[0145] The first heat shield is made of the same material (aluminum alloy) with a thickness of 5 mm, a rough polished surface, and an absorption rate of 0.4. The simulation results show a temperature difference of 19°C on the base plate. Figure 8 The middle corresponds to the original state.

[0146] Here, yes Figure 8 For corresponding explanation, the horizontal axis in the figure refers to the selection Figure 3 Any base plate on the base and the edge area of ​​the base plate are used as the radial distance range of the simulation. It can be seen that the temperature is lower at the minimum and maximum radial distances, which correspond to the edge areas on both sides of the radial direction with the base plate as the center, while the temperature is higher between the minimum and maximum radial distances, which corresponds to the base plate area.

[0147] Example 4

[0148] The first heat shield is set as an integral structure, the material is aluminum alloy 6061-T6, the overall lower surface absorption rate is about 0.3, the average temperature of the heat source is 1000℃, the water cooling temperature of the cavity wall is 20℃, the inner diameter of the cavity is 110mm, the distance between the upper and lower covers inside the cavity is 30mm, the thickness of the first heat shield is 5mm, and the outer diameter is 110mm. The simulation results show that the radial temperature distribution of the substrate to be heated is as follows Figure 9As shown in the figure ("before modification"), the radial temperature difference is 8°C, and it shows a distribution trend of high temperature in the middle and low temperature at the edge.

[0149] Example 5

[0150] On the basis of Example 4, the surface treatment method of the first insulation board from the inside to the outside was adjusted, and the surface absorption rate of the first insulation board was modified. The absorption rate of the first insulation board within the range of 0-85 mm was kept at 0.3, and the absorption rate of the lower surface of the first insulation board within the range of 85-110 mm was changed to 0.05. Further simulation analysis was performed, and the simulation results were as follows: Figure 9 (After modification) As shown, the radial temperature difference of the substrate to be heated is reduced to 6°C, the temperature difference is reduced, and its surface temperature is increased by 10°C as a whole, reducing the energy transmission loss.

[0151] These are only specific embodiments of the present invention, but the scope of protection of the present invention is not limited thereto. Those skilled in the art should understand that the present invention includes but is not limited to the contents described in the drawings and the above specific embodiments. Any modifications that do not deviate from the functional and structural principles of the present invention are included within the scope of the claims.

Claims

1. A high temperature reaction equipment, characterized in that: The high temperature reaction equipment (1) comprises: reaction chamber (3); A base (8), the base (8) being arranged at the bottom of the reaction chamber (3) for supporting a substrate, the base (8) comprising a central area (81), a base plate area (80), and an edge area sequentially arranged radially close to a side wall of the reaction chamber; at least one first heat insulation board (5), the first heat insulation board (5) being arranged on the top surface of the reaction chamber (3), A baffle (6), the baffle (6) is opposite to the base, the first heat insulation board (5) is arranged on a side of the baffle (6) away from the base, an air flow gap is provided between the first heat insulation board (5) and the baffle (6), the first heat insulation board (5) includes a plurality of sub-heat insulation boards (50), the comprehensive thermal conductivity of the sub-heat insulation boards corresponding to the base plate area (80) is greater than the comprehensive thermal conductivity of the sub-heat insulation boards corresponding to the central area (81) and the edge area, wherein, The comprehensive thermal conductivity of the sub-insulation board (50) satisfies the following formula: <h2 style=";text-align:left;direction:ltr">k<h2 style=";text-align:left;direction:ltr"> eff <h2 style=";text-align:left;direction:ltr"> =(t1*k1 / t3)+(t2*k2 / t3) Among them, k eff is the comprehensive thermal conductivity, t1 is the thickness of the sub-insulation board, k1 is the thermal conductivity of the sub-insulation board, t2 is the thickness of the airflow gap, k2 is the thermal conductivity of the airflow in the airflow gap, and t3 is the total thickness of the sub-insulation board and the airflow gap.

2. The high temperature reaction equipment according to claim 1, characterized in that: The thickness of the sub-insulation board (50) corresponding to the base plate area (80) is greater than the thickness of the sub-insulation board (50) corresponding to the central area (81) and the edge area.

3. The high temperature reaction equipment according to claim 1, characterized in that: The material of the sub-insulation plate (50) includes at least one of graphite felt, ceramics and metal, the thermal conductivity of the material of the sub-insulation plate (50) corresponding to the base plate area (80) is greater than the thermal conductivity of the material of the sub-insulation plate (50) corresponding to the central area (81) and the edge area, and the material of the baffle (6) includes graphite felt and / or quartz.

4. The high temperature reaction equipment according to claim 1, characterized in that A second heat insulation plate (32) is provided on the side wall of the reaction chamber (3), and the second heat insulation plate (32) is provided around the base (8), so that the heat emitted from the base (8) to the side wall is blocked by the second heat insulation plate (32).

5. The high temperature reaction equipment according to claim 4, characterized in that: The second heat insulation board (32) comprises a longitudinal heat insulation board and a transverse heat insulation board, wherein the longitudinal heat insulation board and the transverse heat insulation board are connected to form a whole. The longitudinal heat insulation plate is extended around the base (8) and is spaced apart from the side wall of the reaction chamber so as to separate the base (8) from the side wall; The transverse heat insulation plate is arranged in a ring shape at the top of the reaction chamber, so that the second heat insulation plate has a chamber opening at the top, and the first heat insulation plate (5) covers the chamber opening, so that a heat insulation space (33) is formed between the first heat insulation plate, the second heat insulation plate and the base.

6. The high temperature reaction equipment according to claim 1, characterized in that: The surface roughness of the sub-insulation board (50) corresponding to the base plate area (80) is greater than the surface roughness of the sub-insulation board (50) corresponding to the central area (81) and the edge area.

7. The high temperature reaction equipment according to claim 1, characterized in that: In a radial direction of the first heat insulation board (5), a plurality of the sub-heat insulation boards (50) are arranged in a ring shape with the central area (81) as the center, and a first interval is provided between adjacent sub-heat insulation boards (50); In the circumferential direction of the first heat insulation plate (5), at least one of the sub-heat insulation plates (50) comprises a plurality of annular sub-plates, and adjacent annular sub-plates have a second interval in the circumferential direction of the first heat insulation plate (5).

8. The high temperature reaction equipment according to claim 7, characterized in that: The first interval satisfies the following formula: Wherein, d is the first interval, α is the thermal expansion coefficient of the material of the sub-insulation board, L is the radial dimension of the sub-insulation board along the first insulation board, ∆T is the difference between the operating temperature and the installation temperature δ is the safety margin, and the range of δ is between 0.1 mm and 0.5 mm; The second interval satisfies the following formula: Wherein, d2 is the second interval L2 is the dimension of the sub-insulation board along the circumference of the first insulation board.

9. The high temperature reaction equipment according to claim 7, characterized in that: A deformable heat conducting member is disposed in the first and second spaces.

10. The high temperature reaction equipment according to claim 7, characterized in that: The annular split plate is provided with a plurality of first mounting holes (52) for mounting screws, and the plurality of first mounting holes (52) are arranged at a third interval along the circumference of the first heat insulation plate (5), so that the plurality of annular split plates are detachably fixedly connected to the cavity wall of the reaction cavity (3) through the screws and the first mounting holes (52).

11. The high temperature reaction equipment according to claim 10, characterized in that: The third intervals of the plurality of first mounting holes (52) along the circumference of the first heat insulation board (5) are consistent, and the third intervals satisfy the following formula: d3 ≥ 3×t4+D1 Wherein, d3 is the third interval, t4 is the thickness of the annular partition plate, and D1 is the diameter of the first mounting hole.

12. The high temperature reaction equipment according to claim 7, characterized in that: At least one second mounting hole (511) is provided on the annular partition plate for allowing a detection probe of a temperature sensor to pass through the second mounting hole (511) to detect the temperature inside the reaction chamber.

13. The high temperature reaction equipment according to claim 12, characterized in that: The second mounting hole (511) is located at the intervals between the plurality of annular sub-plates and corresponds to the base plate area; The second mounting hole comprises a tapered hole, and / or an inner wall of the second mounting hole has a polished surface to increase reflectivity, and / or a heat insulating sleeve is nested in the second mounting hole; The surface roughness of the annular split plate with the second mounting hole is greater than the surface roughness of the annular split plate without the second mounting hole.

14. The high temperature reaction equipment according to any one of claims 1 to 13, characterized in that: The high-temperature reaction equipment further comprises a spray module (7), the spray module comprising an air inlet pipe body (71) and a spray head (70), the air inlet pipe body (71) being connected to the spray head (70), the air inlet pipe body having at least one air inlet channel (710), the spray head having a spray surface, the spray surface having a plurality of spray holes, the air inlet channel (710) being connected to the spray holes, so that the gas in the air inlet channel is sprayed toward the reaction chamber (3) through the spray surface; The first heat insulation plate (5) is provided with a spray mounting hole (810), and the air inlet pipe (71) passes through the cavity wall of the reaction cavity (3) and the corresponding spray mounting hole, so that the spray head is arranged on a side of the first heat insulation plate (5) close to the base.

15. The high temperature reaction equipment according to any one of claims 1 to 13, characterized in that: The reaction chamber (3) includes a first chamber cover (2) arranged on the top, the first chamber cover (2) having an outer surface and an inner surface arranged opposite to each other, the first heat insulation plate (5) being arranged on the inner surface, and a plurality of first liquid cooling channels (20) being arranged in the first chamber cover (2), the plurality of first liquid cooling channels (20) being arranged along the radial direction of the base, the inner surface corresponding to the front side of the base, and the number of the first liquid cooling channels at positions corresponding to the base plate area (80) being greater than the number of the first liquid cooling channels at positions corresponding to the central area (81) and the edge area.

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