A flash etching cleaning solution for IC substrates, its preparation method and application method

Abstract

This invention discloses a flash etching cleaning solution for IC substrates, its preparation method, and its application method, relating to the field of IC substrate flash etching technology. The cleaning solution comprises the following components in the indicated mass concentrations: 0.5-3.5% cleaning agent, 0.5-2.5% complexing agent, 0.5-2.5% colloidal dispersant, 0.5-2.5% corrosion inhibitor, 0.5-2.5% wetting agent, with the balance being water. The cleaning agent is an ammonium fluoroborate compound, the complexing agent is a benzyl ether compound, the colloidal dispersant is a piperidine carboxylic acid compound, the corrosion inhibitor is a tin alkyl pyridine compound, and the wetting agent is a fluoroester compound. This invention provides an IC substrate flash etching cleaning solution that features highly efficient impurity removal, zero equipment corrosion, and environmental friendliness, making it suitable for the cleaning process of IC substrate flash etching.

Description

Technical Field

[0001] This invention relates to the field of IC substrate flash etching technology, and in particular to an IC substrate flash etching cleaning solution and its preparation and application methods. Background Technology

[0002] With the rapid development of the semiconductor industry, integrated circuits (ICs) are constantly evolving towards higher integration and smaller sizes, which places unprecedentedly stringent requirements on the manufacturing process of IC substrates. As a key interconnect component between chips and printed circuit boards (PCBs), the accuracy and reliability of the IC substrate directly affect chip performance and the overall quality of electronic products. Flash etching is indispensable in IC substrate manufacturing; it can precisely process circuit details and achieve extremely fine line widths and spacings, which is of great significance for improving the electrical performance and signal transmission stability of IC substrates.

[0003] However, during the continuous operation of the flash etching process for IC substrates, a large amount of impurities gradually accumulate in the flash etching tank. Currently, the industry generally uses an acidic copper chloride flash etching system, where impurities continuously accumulate in the tank solution during processing. Suspended copper / tin particles can cause jagged / notched defects in the circuits; organic residues such as photoresist stripping residue and additive decomposition products; and silicides such as substrate grinding debris and silane coupling agent reactants can precipitate in the tank. These impurities not only interfere with the chemical balance of the flash etching solution, reducing the flash etching rate and uniformity, leading to problems such as circuit size deviations and surface roughness, but may also cause serious defects such as short circuits and open circuits, greatly affecting the yield and production efficiency of IC substrates. Therefore, developing a highly efficient, environmentally friendly, low-corrosion, and economical cleaning solution for IC substrate flash etching tanks, as well as its preparation and application methods, is key to solving the current bottlenecks in IC substrate manufacturing processes and has significant industrial value and market prospects.

[0004] Currently, there are many mature technical solutions for cleaning tank solutions. Chinese patent CN111019430A discloses an acidic developing cleaning tank solution, whose main components include phosphoric acid, acetic acid and alkylbenzene sulfonic acid, ethylene glycol, polytrifluoropropylmethylsiloxane, EDTA, OP-10, etc., which provides good protection for rollers and tank walls, is easy to operate, and has high removal efficiency. Chinese patent CN110042018A discloses an alkaline developing cleaning tank solution, whose main components include inorganic alkali, ethanolamine, sodium phosphate salt or similar substances. This cleaning tank solution has low production cost, good cleaning effect, and low chemical odor. Chinese patent CN114437876A discloses a circuit board dry film developing cleaning tank solution, which includes polyacrylamide / methylene polyacrylamide, aminotriacetic acid / diethylenetriaminepentaacetic acid, 3-propanolamine / N,N-dimethylethanolamine, and polyoxypropylene glycerol ether / polyoxypropylene polyoxyethylene glycerol ether. Through the coordinated action of its components, it offers advantages such as safety, environmental friendliness, high efficiency, and a superior operating environment, effectively solving problems such as residues after cleaning and long cleaning times.

[0005] However, existing cleaning solutions on the market currently exhibit significant limitations when dealing with the complex impurities in IC substrate flash etching tanks. Some cleaning solutions lack the ability to dissolve and remove stubborn impurities, making it difficult to thoroughly clean the tank; others are highly corrosive, easily damaging the special materials and precision structures of the flash etching tanks, affecting equipment lifespan; furthermore, some cleaning solutions are unsatisfactory in terms of environmental friendliness and cost control, failing to meet the urgent needs of the semiconductor industry for green production and cost reduction and efficiency improvement. Therefore, developing specialized cleaning solutions and intelligent maintenance methods that combine high-efficiency impurity removal, zero equipment corrosion, environmental friendliness, and outstanding economics has become a crucial technological direction urgently needed to overcome the bottlenecks in IC substrate manufacturing. Summary of the Invention

[0006] To address the shortcomings of existing technologies, this invention provides an IC substrate flash etching cleaning solution, its preparation method, and its application method, which is mainly used in the cleaning process of IC substrate flash etching.

[0007] Specifically, the following technical solutions are included:

[0008] In a first aspect, an IC substrate flash etching cleaning solution is provided, comprising the following components in mass concentrations: 0.5-3.5% cleaning agent, 0.5-2.5% complexing agent, 0.5-2.5% colloidal dispersant, 0.5-2.5% corrosion inhibitor, 0.5-2.5% wetting agent, and the balance being water; wherein the cleaning agent is an ammonium fluoroborate compound, the complexing agent is a benzyl ether compound, the colloidal dispersant is a piperidine carboxylic acid compound, the corrosion inhibitor is a tin alkyl pyridine compound, and the wetting agent is a fluoroester compound.

[0009] Furthermore, the IC carrier flash etching cleaning solution is composed of the following components in terms of mass concentration: 1.0-2.0% cleaning agent, 0.5-1.5% complexing agent, 0.5-1.5% colloidal dispersant, 0.5-1.5% corrosion inhibitor, 0.5-1.5% wetting agent, and the balance being water.

[0010] Furthermore, the cleaning agent is selected from one or more of tetramethylammonium tetrafluoroborate (CAS No.: 661-36-9), tetraethylammonium tetrafluoroborate (CAS No.: 429-06-1), and tetrabutylammonium tetrafluoroborate (CAS No.: 429-42-5).

[0011] Furthermore, the complexing agent is selected from one or more of the following: veratrol ether (CAS No.: 23702-54-7), 2-naphthylbenzyl ether (CAS No.: 613-62-7), and benzylpropynyl ether (CAS No.: 4039-82-1).

[0012] Furthermore, the colloidal dispersant is selected from one or more of 1-[(tert-butoxy)carbonyl]-4-methylpiperidine-4-carboxylic acid (CAS No.: 189321-63-9), 1-[(tert-butoxy)carbonyl]-2-methylpiperidine-2-carboxylic acid (CAS No.: 746658-74-2), and (S)-1-((benzyloxy)carbonyl)piperidine-3-carboxylic acid (CAS No.: 88466-74-4).

[0013] Furthermore, the corrosion inhibitor is selected from one or more of 2-tri-n-butyltinylpyridine (CAS No.: 17997-47-6), 2-methoxy-4-(tributyltinyl)pyridine (CAS No.: 1204580-72-2), and 2-methyl-6-(tributyltinyl)pyridine (CAS No.: 259807-95-9).

[0014] Furthermore, the wetting agent is selected from one or more of the following: ethyl 3-amino-4,4,4-trifluorobutenoate (CAS No.: 372-29-2), ethyl 4,4,4-trifluorocrotonate (CAS No.: 25597-16-4), and diethyl 2,2,3,3,4,4-hexafluoropentanoate (CAS No.: 424-40-8).

[0015] Secondly, a method for preparing the IC substrate flash etching cleaning solution as described in the first aspect is provided, comprising the following steps: weighing the cleaning agent, complexing agent, colloidal dispersant, corrosion inhibitor, wetting agent and the remaining water in sequence and adding them to a reaction vessel, and stirring and mixing at room temperature of 25-28℃ for 30-35 minutes to obtain the IC substrate flash etching cleaning solution.

[0016] Thirdly, a method for using the IC substrate flash etching cleaning solution as described in the first aspect is provided, characterized by comprising the following steps: cleaning the flash etching tank using the IC substrate flash etching cleaning solution as described in the first aspect.

[0017] Furthermore, the temperature inside the flash etching tank is 30±1℃, and the cleaning time is 20-25 minutes.

[0018] The beneficial effects of this invention are as follows:

[0019] A flash etching cleaning solution for IC substrates, its preparation method, and its application method are disclosed. The cleaning solution contains a cleaning agent, a complexing agent, a colloidal dispersant, a corrosion inhibitor, and a wetting agent as active ingredients. The cleaning agent adsorbs harmful ions and organic contaminants in the solution while dissolving Si / SiO2 precipitates. The complexing agent selectively chelates Cu. 2+ / Sn 2+ Colloidal dispersants inhibit colloid formation. They break down submicron particle clusters in solution, maintaining dispersion stability through electrostatic repulsion or steric hindrance. Corrosion inhibitors form adsorption or passivation films on metal surfaces, protecting titanium alloy / PTFE equipment. Wetting agents reduce surface tension, enhance the spreading and penetration of the bath solution, and accelerate the cleaning process.

[0020] The IC substrate flash etching cleaning solution of the present invention has the characteristics of efficient impurity removal, zero equipment corrosion, and environmental friendliness. After cleaning, the colloidal copper removal rate in the flash etching tank is ≥99.5%, the organic residue decomposition rate is ≥98.2%, and the silicide turbidity is ≤0.45NTU, which meets the usage requirements of IC substrate cleaning solution and can be used in the cleaning process of IC substrate flash etching. Attached Figure Description

[0021] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the following description of the embodiments will be briefly introduced. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0022] Figure 1 A filter diagram of the flash etching tank after cleaning with the flash etching cleaning solution of IC carrier board according to Embodiment 1 of the present invention;

[0023] Figure 2 A filter diagram of the flash etching tank after cleaning with the flash etching cleaning solution of IC carrier board according to Embodiment 2 of the present invention;

[0024] Figure 3 A filter diagram of the flash etching tank after cleaning with the flash etching cleaning solution of Comparative Example 1 of the present invention;

[0025] Figure 4A filter diagram of the flash etching tank after cleaning with the flash etching cleaning solution of Comparative Example 4 of the present invention.

[0026] Figure 5 A filter diagram of the flash etch tank after cleaning with the cleaning solution of Comparative Example 11 of the present invention;

[0027] Figure 6 An optical microscope image of the IC substrate after flash etching and cleaning with the IC substrate flash etching cleaning solution of Example 1 of the present invention.

[0028] Figure 7 An optical microscope image of the flash etching of an IC substrate after cleaning with the cleaning solution of Comparative Example 11 of the present invention. Detailed Implementation

[0029] The technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0030] It should be understood that, when used in this specification and the appended claims, the terms "comprising" and "including" indicate the presence of the described features, integrals, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components and / or collections thereof.

[0031] It should also be understood that the terminology used in this specification is for the purpose of describing particular embodiments only and is not intended to limit the invention. As used in this specification and the appended claims, the singular forms “a,” “an,” and “the” are intended to include the plural forms unless the context clearly indicates otherwise.

[0032] It should also be further understood that the term "and / or" as used in this specification and the appended claims refers to any combination of one or more of the associated listed items and all possible combinations, and includes such combinations.

[0033] To better understand the technical content of the present invention, the technical solution of the present invention will be further introduced and explained below with reference to specific embodiments.

[0034] Example 1:

[0035] An IC substrate flash etching cleaning solution comprises the following components by mass concentration:

[0036] The cleaning agent is 1.5%, specifically tetramethylammonium tetrafluoroborate;

[0037] The complexing agent is 1.0%, specifically veratrol ether;

[0038] The colloidal dispersant is 1.0%, specifically 1-[(tert-butoxy)carbonyl]-4-methylpiperidine-4-carboxylic acid;

[0039] Corrosion inhibitor 1.0%, specifically 2-tri-n-butyltinylpyridine;

[0040] The wetting agent is 1.0%, specifically ethyl 3-amino-4,4,4-trifluorobutenoate;

[0041] The remainder is water.

[0042] The preparation method of the IC substrate flash etching cleaning solution includes the following steps: weighing the cleaning agent, complexing agent, colloidal dispersant, corrosion inhibitor, wetting agent and the remaining water in sequence and adding them to the reaction vessel, stirring and mixing at room temperature of 25°C for 30 minutes to obtain the IC substrate flash etching cleaning solution.

[0043] Example 2:

[0044] An IC substrate flash etching cleaning solution comprises the following components by mass concentration:

[0045] The cleaning agent is 1.5%, specifically tetraethylammonium tetrafluoroborate;

[0046] The complexing agent is 1.0%, specifically 2-naphthylbenzyl ether;

[0047] The colloidal dispersant is 1.0%, specifically 1-[(tert-butoxy)carbonyl]-2-methylpiperidine-2-carboxylic acid;

[0048] The corrosion inhibitor is 1.0%, specifically 2-methoxy-4-(tributyltinalkyl)pyridine;

[0049] The wetting agent is 1.0%, specifically ethyl 4,4,4-trifluorocrotonate;

[0050] The remainder is water.

[0051] Example 3:

[0052] An IC substrate flash etching cleaning solution comprises the following components by mass concentration:

[0053] The cleaning agent is 1.5%, specifically tetrabutylammonium tetrafluoroborate;

[0054] The complexing agent is 1.0%, specifically benzylpropynyl ether;

[0055] The colloidal dispersant is 1.0%, specifically (S)-1-((benzyloxy)carbonyl)piperidine-3-carboxylic acid;

[0056] Corrosion inhibitor 1.0%, specifically 2-methyl-6-(tributyltinalkyl)pyridine;

[0057] The wetting agent is 1.0%, specifically diethyl 2,2,3,3,4,4-hexafluoropentanoate;

[0058] The remainder is water.

[0059] Example 4:

[0060] An IC substrate flash etching cleaning solution comprises the following components by mass concentration:

[0061] The cleaning agent is 1.0%, specifically tetramethylammonium tetrafluoroborate;

[0062] The complexing agent is 0.5%, specifically veratrol ether;

[0063] The colloidal dispersant is 0.5%, specifically 1-[(tert-butoxy)carbonyl]-4-methylpiperidine-4-carboxylic acid;

[0064] Corrosion inhibitor 0.5%, specifically 2-tri-n-butyltinylpyridine;

[0065] The wetting agent is 0.5%, specifically ethyl 3-amino-4,4,4-trifluorobutenoate;

[0066] The remainder is water.

[0067] Example 5:

[0068] An IC substrate flash etching cleaning solution comprises the following components by mass concentration:

[0069] The cleaning agent is 2.0%, specifically tetramethylammonium tetrafluoroborate;

[0070] The complexing agent is 1.5%, specifically veratrol ether;

[0071] The colloidal dispersant is 1.5%, specifically 1-[(tert-butoxy)carbonyl]-4-methylpiperidine-4-carboxylic acid;

[0072] Corrosion inhibitor 1.5%, specifically 2-tri-n-butyltinylpyridine;

[0073] The wetting agent is 1.5%, specifically ethyl 3-amino-4,4,4-trifluorobutenoate;

[0074] The remainder is water.

[0075] Comparative Example 1

[0076] Comparative Example 1 provides a flash etching cleaning solution for an IC carrier. The only difference between Comparative Example 1 and Example 1 is that Comparative Example 1 does not contain any cleaning agent in its components.

[0077] Comparative Example 2

[0078] Comparative Example 2 provides a flash etching cleaning solution for an IC substrate. The only difference between Comparative Example 2 and Example 1 is that the components do not contain a complexing agent.

[0079] Comparative Example 3

[0080] Comparative Example 3 provides a flash etching cleaning solution for an IC carrier. The only difference between Comparative Example 3 and Example 1 is that the components do not contain colloidal dispersants.

[0081] Comparative Example 4

[0082] Comparative Example 4 provides a flash etching cleaning solution for an IC carrier. The only difference between Comparative Example 4 and Example 1 is that Comparative Example 4 does not contain corrosion inhibitors.

[0083] Comparative Example 5

[0084] Comparative Example 5 provides a flash etching cleaning solution for an IC substrate. The only difference between Comparative Example 5 and Example 1 is that Comparative Example 5 does not contain a wetting agent.

[0085] Comparative Example 6

[0086] Comparative Example 6 provides a flash etching cleaning solution for an IC carrier. The only difference between Comparative Example 6 and Example 1 is that the mass concentration of the cleaning agent in the components is 4.0%.

[0087] Comparative Example 7

[0088] Comparative Example 7 provides a flash etching cleaning solution for an IC substrate. The only difference between Comparative Example 7 and Example 1 is that the mass concentration of the complexing agent in the components is 3.0%.

[0089] Comparative Example 8

[0090] Comparative Example 8 provides a flash etching cleaning solution for an IC carrier. The only difference between Comparative Example 8 and Example 1 is that the mass concentration of the colloidal dispersant in the components is 3.0%.

[0091] Comparative Example 9

[0092] Comparative Example 9 provides a flash etching cleaning solution for an IC carrier. The only difference between Comparative Example 9 and Example 1 is that the mass concentration of the corrosion inhibitor in the components is 3.0%.

[0093] Comparative Example 10

[0094] Comparative Example 10 provides a flash etching cleaning solution for an IC substrate. The only difference between Comparative Example 10 and Example 1 is that the mass concentration of the wetting agent in the components is 3.0%.

[0095] Comparative Example 11

[0096] Comparative Example 11 provides a cleaning solution. Compared with Example 1, Comparative Example 11 uses a prior art cleaning solution (Chinese Patent CN114437876A) and compares it with the cleaning solution of the present invention. Specifically, it is composed of the following weight percentage components: 5% 3-propanolamine, 2.5% polyacrylamide, 8% aminotriacetic acid, 5% polyoxypropylene glycerol ether, and the balance is tap water.

[0097] The preparation methods of the cleaning solutions in Examples 2-5 and Comparative Examples 1-11 are the same as those in Example 1.

[0098] Performance testing

[0099] This invention discloses a method for using a flash etching cleaning solution for IC substrates, comprising the following steps: S1 alkaline washing; S2 water washing; S3 acid washing; S4 water washing; S5 cleaning solution washing; S6 water washing; S7 secondary water washing.

[0100] The S1 alkaline wash involves using an inorganic alkali to clean the flash etching tank after production, removing hard scale or ink residue and other impurities. The alkaline wash parameters are: the solution in the tank is 5% NaOH (mass concentration), with the remainder being tap water; the operating mode is to circulate the cleaning process, and then drain the solution from the tank after the cleaning time is completed; the tank temperature is 30±1℃, and the cleaning time is 20 minutes.

[0101] The S2 water wash involves rinsing the flashover tank after the S1 alkaline washing step with tap water to remove the alkali from the tank. The parameters for the water wash are as follows: the solution in the tank is tap water; the operating mode is to start the equipment for circulation cleaning, and drain the solution in the tank after the cleaning time is completed; the temperature in the tank is 30±1℃, and the cleaning time is 10 minutes.

[0102] The S3 acid pickling involves cleaning the flash etching tank with acid after the S2 water washing step to remove the deposited dirt at the bottom of the tank. The acid pickling parameters are as follows: the solution in the tank is 5% hydrochloric acid (mass concentration), with the remainder being tap water; the operating mode is to start the equipment for circulation cleaning, and then drain the solution from the tank after the cleaning time is completed; the tank temperature is 30±1℃, and the cleaning time is 20 minutes.

[0103] The S4 water wash involves rinsing the flash etching tank after the S3 acid washing step with tap water to remove the acid from the tank. The parameters for the water wash are as follows: the solution in the tank is tap water; the operating mode is to start the equipment for circulation cleaning, and drain the solution in the tank after the cleaning time is completed; the temperature in the tank is 30±1℃, and the cleaning time is 10 minutes.

[0104] The S5 cleaning solution is the IC substrate flash etching cleaning solution of the embodiment / comparative example of the present invention or the cleaning solution of the prior art, used to clean the flash etching tank after the S4 water washing step. The parameters of the cleaning solution are as follows: the solution in the tank is 50% by mass of the cleaning solution of the embodiment or comparative example of the present invention (or the cleaning solution of the prior art), and the remainder is tap water; the working mode is to start the equipment for circulation cleaning, and drain the solution in the tank after the cleaning time is completed; the tank temperature is 30±1℃, and the cleaning time is 20 minutes.

[0105] The S6 water wash involves rinsing the flash erosion tank after the S5 cleaning solution wash with tap water. The parameters for the water wash are as follows: the solution in the tank is tap water; the operating mode is to start the equipment for circulation cleaning, and drain the solution in the tank after the cleaning time is completed; the temperature in the tank is 30±1℃, and the cleaning time is 10 minutes.

[0106] The S7 secondary water wash involves rinsing the flashover tank after the S6 water wash with deionized water. The parameters for the water wash are as follows: the solution in the tank is deionized water; the operating mode is to start the equipment for circulation cleaning; after the cleaning time is completed, the solution in the tank is drained; the temperature in the tank is 30±1℃; and the cleaning time is 10 minutes.

[0107] The performance of the cleaning solution of this invention is mainly reflected in three aspects:

[0108] The first test was to determine the removal rate of colloidal copper in the flash etching tank after cleaning. The test method was as follows: a solution sample was collected from the flash etching tank before cleaning, denoted as A; after cleaning, deionized water was added to the flash etching tank to the liquid level line, and circulation was initiated for 10 minutes. Another solution sample was then collected, denoted as B. The copper concentrations of samples A and B were detected using a SUPEC 7000 inductively coupled plasma mass spectrometer (ICP-MS), denoted as C. A and C B Calculate the colloidal copper removal rate. Colloidal copper removal rate (%) = [(C A -C B ) / C A ×100%. Colloidal copper removal rate is required to be ≥99.2%.

[0109] The second test was to detect the decomposition rate of organic residues in the flash etching tank after cleaning. The test method was as follows: a solution sample was collected from the flash etching tank before cleaning, denoted as A; after cleaning, deionized water was added to the flash etching tank to the liquid level line, and circulation was started in the tank for 10 minutes. Another solution sample was then collected, denoted as B. The absorbance of samples A and B at UV254 was measured using a UN-600 UV-Vis-NIR spectrophotometer, and the results were denoted as X. A and X B Calculate the organic residue decomposition rate. Organic residue decomposition rate (%) = [(X A -X B ) / XA ×100%. The organic residue decomposition rate must be ≥90.0%.

[0110] The third step is to test the silicide turbidity in the flash etching tank after cleaning. The test method is as follows: After cleaning, add deionized water to the flash etching tank to the liquid level line, circulate the solution in the tank for 10 minutes, collect a solution sample, and use a HACH 2100AN portable turbidity meter to test the turbidity. The required silicide turbidity is ≤2.00 NTU.

[0111] Performance tests were conducted on the IC substrate flash etching cleaning solutions from Examples 1 to 5. The test results are shown in Table 1 below:

[0112] Table 1. Performance test results of the IC substrate flash etching cleaning solution in Examples 1-5

[0113]

[0114] Figure 1 A filter diagram of the flash etching tank after cleaning with the flash etching cleaning solution of IC carrier board according to Embodiment 1 of the present invention; Figure 2 This is a filter diagram of the flash etching tank after cleaning with the IC carrier flash etching cleaning solution of Embodiment 2 of the present invention. Figures 1-2 As shown in Table 1, the cleaning solution of this invention, compared with commercially available conventional products (which generally require a 1-2 hour cleaning cycle), can complete the cleaning step in only 20 minutes, significantly reducing labor and time costs. Specifically, after cleaning the IC substrate flash etching tank, the colloidal copper removal rate reaches over 99.5%, the organic residue decomposition rate exceeds 98.2%, and the silicide dispersion turbidity is controlled below 0.45 NTU. It is evident that this cleaning solution possesses advantages such as high-efficiency impurity removal capability, zero corrosion to equipment, and environmental friendliness. All indicators meet the requirements of the IC substrate manufacturing process and can be directly applied to the cleaning stage of the flash etching process.

[0115] The performance of the flash etching cleaning solutions for IC carriers in Comparative Examples 1-4 was tested, and the results are shown in Table 2 below.

[0116] Table 2. Performance test results of the flash etching cleaning solution for IC carrier boards in Comparative Examples 1-4

[0117]

[0118] Figure 3 A filter diagram of the flash etching tank after cleaning with the flash etching cleaning solution of Comparative Example 1 of the present invention; Figure 4 This is a filter diagram of the flash etching tank after cleaning with the flash etching cleaning solution of Comparative Example 4 of this invention. Figures 3-4As shown in Table 2, comparative examples 1-4 involved removing the cleaning agent, complexing agent, colloidal dispersant, and corrosion inhibitor one by one from the IC substrate flash etching cleaning solution formulation of Example 1 of this invention. Test data shows that each component plays an irreplaceable role in the cleaning process. The cleaning agent, as the core functional component, achieves deep purification by adsorbing harmful ions, decomposing organic pollutants, and dissolving silicon-based precipitates. Its absence significantly reduces the removal rate of colloidal copper and the decomposition rate of organic residues, causes excessive silicide turbidity, and drastically reduces the cleaning effect. The complexing agent, through its ability to react with Cu… 2+ Sn 2+ The selective chelating ability of the cleaning agent effectively inhibits colloid formation and accelerates the removal of metal ions and particulate matter; its absence directly weakens the cleaning efficiency. The colloidal dispersant, by disrupting submicron-sized particle aggregates and utilizing electrostatic repulsion or steric hindrance effects to maintain dispersion stability, is indispensable for improving cleaning performance. The corrosion inhibitor constructs an adsorption or passivation protective film on the equipment surface, ensuring that titanium alloys and PTFE materials are not corroded. Although its performance fluctuation is small when missing alone, it works synergistically with other components to optimize the cleaning effect. The wetting agent enhances the penetration of the cleaning solution by reducing surface tension, accelerates the cleaning rate, and helps improve overall cleaning efficiency. Experimental results show that the absence of any functional component leads to varying degrees of deterioration in the cleaning solution's performance, fully demonstrating that the excellent performance of this cleaning solution stems from the synergistic effect of its components.

[0119] The performance of the flash etching cleaning solutions for IC substrates in Comparative Examples 6-10 and the cleaning solution in Comparative Example 11 were tested. The test results are shown in Table 3 below:

[0120] Table 3 Performance test results of the flash etching cleaning solutions for IC substrates in Comparative Examples 6-10 and the cleaning solution in Comparative Example 11

[0121]

[0122] As shown in Table 3, comparative examples 6-10 were conducted by increasing the concentrations of the cleaning agent, complexing agent, colloidal dispersant, corrosion inhibitor, and wetting agent in the IC substrate flash etching cleaning solution of the present invention to exceed the upper limit of the concentration in Example 1, forming a concentration gradient control experiment with Examples 1-5. The data shows that when the concentrations of each functional component exceeded the threshold limits of the examples, the cleaned flash etching tank did not show a significant improvement in key indicators such as colloidal copper removal rate, organic residue decomposition rate, and silicide turbidity compared to the examples with the standard concentration formulation. This result confirms that simply increasing the component concentration cannot enhance the cleaning efficiency of the cleaning solution; on the contrary, it leads to a significant increase in raw material costs. Therefore, accurately controlling the concentration of each component within the range specified in the embodiments of the present invention is key to achieving a balance between the performance and economy of the cleaning solution—ensuring efficient cleaning while avoiding resource waste caused by excessive addition.

[0123] in addition, Figure 5 A filter diagram of the flash erosion tank after cleaning with the cleaning solution of Comparative Example 11 of the present invention. Figure 6 This is an optical microscope image of the IC substrate after flash etching and cleaning with the IC substrate flash etching cleaning solution of Example 1 of the present invention. Figure 7 This is an optical microscope image of the flash etching of an IC substrate after cleaning with the cleaning solution of Comparative Example 11 of the present invention. The difference between Comparative Example 11 and Example 1 is that a cleaning solution from the prior art is used for comparison. Experimental data shows that the IC substrate flash etching cleaning solution of the present invention has significant advantages in key performance indicators: higher colloidal copper removal rate, more thorough decomposition of organic residues, and lower silicide turbidity. This fully demonstrates that the cleaning solution possesses highly efficient impurity removal capabilities and environmentally friendly characteristics, and its overall performance is superior to traditional technical solutions.

[0124] In summary, this invention provides an IC substrate flash etching cleaning solution, its preparation method, and its application method. This cleaning solution is specifically designed for the IC substrate flash etching cleaning process, offering multiple advantages including high-efficiency cleaning, equipment protection, and environmental friendliness. Experimental data verifies that it can achieve a colloidal copper removal rate exceeding 99.5% and an organic residue decomposition rate exceeding 98.2%, while strictly controlling silicide turbidity below 0.45 NTU. The entire cleaning process ensures zero equipment corrosion, meeting stringent industry standards and providing a reliable and efficient cleaning solution for the IC substrate flash etching process.

[0125] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in the present invention, and these modifications or substitutions should all be covered within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. A flash etching cleaning solution for IC carrier boards, characterized in that, It is composed of the following components in the indicated mass concentrations: 0.5-3.5% scavenger, 0.5-2.5% complexing agent, 0.5-2.5% colloidal dispersant, 0.5-2.5% corrosion inhibitor, 0.5-2.5% wetting agent, and the balance being water; wherein the scavenger is an ammonium fluoroborate compound, the complexing agent is a benzyl ether compound, the colloidal dispersant is a piperidine carboxylic acid compound, the corrosion inhibitor is a tin alkyl pyridine compound, and the wetting agent is a fluoroester compound; The cleaning agent is selected from one or more of tetramethylammonium tetrafluoroborate, tetraethylammonium tetrafluoroborate, and tetrabutylammonium tetrafluoroborate; The complexing agent is selected from one or more of veratrol ether, 2-naphthylbenzyl ether, and benzylpropynyl ether; The colloidal dispersant is selected from one or more of 1-[(tert-butoxy)carbonyl]-4-methylpiperidine-4-carboxylic acid, 1-[(tert-butoxy)carbonyl]-2-methylpiperidine-2-carboxylic acid, and (S)-1-((benzyloxy)carbonyl)piperidine-3-carboxylic acid; The corrosion inhibitor is selected from one or more of 2-tri-n-butyltinylpyridine, 2-methoxy-4-(tributyltinyl)pyridine, and 2-methyl-6-(tributyltinyl)pyridine; The wetting agent is selected from one or more of ethyl 3-amino-4,4,4-trifluorobutenoate, ethyl 4,4,4-trifluorocrotonate, and diethyl 2,2,3,3,4,4-hexafluoropentanoate.

2. The IC carrier flash etching cleaning solution as described in claim 1, characterized in that, It consists of the following components in the indicated mass concentrations: 1.0-2.0% cleaning agent, 0.5-1.5% complexing agent, 0.5-1.5% colloidal dispersant, 0.5-1.5% corrosion inhibitor, 0.5-1.5% wetting agent, and the balance being water.

3. The method for preparing the IC substrate flash etching cleaning solution as described in any one of claims 1-2, characterized in that, The process includes the following steps: Weigh out the cleaning agent, complexing agent, colloidal dispersant, corrosion inhibitor, wetting agent, and the remaining water in sequence and add them to the reaction vessel. Stir and mix at room temperature of 25-28℃ for 30-35 minutes to obtain the IC substrate flash etching cleaning solution.

4. The method of using the IC carrier flash etching cleaning solution as described in any one of claims 1-2, characterized in that, Includes the following steps: The flash etching tank is cleaned using the IC substrate flash etching cleaning solution according to any one of claims 1-2.

5. The method of using the IC carrier flash etching cleaning solution as described in claim 4, characterized in that, The temperature inside the flash etching tank is 30±1℃, and the cleaning time is 20-25 minutes.

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