Wafer oxide removal and degassing device, method and process equipment

Abstract

The invention discloses a wafer oxide removal and degassing device, method and process equipment, and the device comprises a processing cavity which is used for carrying out the surface metal oxide removal processing of a wafer for the first time at a first temperature and a first pressure, and carrying out the surface metal oxide removal processing of the wafer for the second time at a second temperature and a second pressure, carrying out degassing treatment of removing oxygen and water vapor on the surface of the same wafer for a second time; heating the wafer to a first temperature or a second temperature through a heating module; introducing formic acid gas through the first gas inlet to remove metal oxides on the surface of the wafer; introducing nitrogen or inert gas into the processing cavity through the second gas inlet so as to perform degassing processing on the wafer; and air exhaust control is carried out through the first air exhaust opening so as to maintain the first pressure or the second pressure. The method has the advantages of simplifying the process, saving the process time, improving the efficiency, increasing the productivity, saving the cost, reducing the plasma induced damage and the like.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular, to an apparatus, a method, and a process equipment for removing and degassing wafer oxides. Background Art

[0002] In the process of manufacturing semiconductor chips, a natural metal oxide layer is easily formed on the surface of the metal deposited on the surface of the semiconductor wafer. In the process of physical vapor deposition (PVD) equipment, in order to reduce the increase of the chip contact resistance caused by the metal oxide, in the pre-cleaning chamber before metal deposition, generally, plasma or remote plasma is used to etch off these metal oxides, and then new metal is continuously deposited on the metal surface after the metal oxide is removed to form interconnections or as a contact layer.

[0003] Above the 45nm node, the pre-cleaning chamber generally uses argon plasma generated by inductively coupled plasma (ICP) or capacitively coupled plasma (CCP) to remove the above-mentioned metal oxides. However, at the 45nm and below nodes, low dielectric constant (low K) dielectric layers are adopted, and the dielectric constant is generally lower than 3.9 to reduce the resistance-capacitance delay (RC delay). The use of low dielectric constant materials makes argon plasma not applicable to pre-cleaning because the bombardment of argon plasma will damage the structure and properties of the low dielectric constant materials, increasing the dielectric constant value (k value) of the materials. Moreover, the bombardment generates a large amount of heat, resulting in a relatively large difference in the etching uniformity of the wafer surface, affecting the performance of wafer manufacturing. At the same time, if the chamber design is not good and the plasma bombardment is uneven, the purpose of uniform oxide removal cannot be achieved, and the bombardment is also likely to cause wafer arcing problems. Therefore, at the 45nm and below nodes, the industry has started to use methods such as remote plasma of hydrogen or remote plasma of gases such as nitrogen trifluoride (NF3). By generating effective active radicals outside the chamber and transporting them into the chamber through gas transportation, the active radicals react with the oxides on the metal to remove the metal oxides. However, the disadvantage of this method is that the chamber structure is more complex, the control difficulty is greater, the cost is higher, and the speed of removing oxides is not fast enough.

[0004] In addition, in the advanced wafer-level packaging process, physical vapor deposition equipment is usually used to deposit the metal redistribution layer (RDL) and the under-bump metallization layer (UBM). Organic materials such as PI / BCB / BPO (polyimide / benzocyclobutene / dibenzoyl peroxide) are generally used as dielectric materials. When argon plasma generated by inductively coupled plasma or capacitively coupled plasma is used to remove metal oxides, carbon particles will be generated from these organic materials. These particles adhere to the inner lining components (process kit) and are extremely easy to fall off, seriously affecting the service life of the inner lining components (the service life of general inner lining components is usually equivalent to etching 25μm thickness of PI), thus seriously affecting the production capacity and cost of the equipment.

[0005] Moreover, in the existing physical vapor deposition equipment, before removing metal oxides, a degassing chamber needs to be separately set up to perform degassing treatment on the oxygen and water vapor present on the wafer surface at a certain temperature and pressure. This results in a relatively large proportion of the processing time of the pre-cleaning and degassing processes in the entire physical vapor deposition process, making the efficiency relatively low and thus limiting the production capacity. Summary of the Invention

[0006] The object of the present invention is to overcome the above-mentioned defects existing in the prior art, and provide a device, method and process equipment for wafer oxide removal and degassing.

[0007] To achieve the above object, the technical solution of the present invention is as follows:

[0008] The present invention provides a device for wafer oxide removal and degassing, including:

[0009] A processing chamber for performing surface metal oxide removal treatment on the wafer for a first time at a first temperature and a first pressure, and performing degassing treatment for removing surface oxygen and water vapor on the same wafer for a second time at a second temperature and a second pressure;

[0010] A heating module for heating the temperature of the wafer to the first temperature or the second temperature;

[0011] A first gas inlet for introducing formic acid gas into the processing chamber to remove the metal oxides on the wafer surface;

[0012] A second gas inlet for introducing nitrogen or inert gas into the processing chamber to perform degassing treatment on the wafer when the first gas inlet is closed;

[0013] A first gas extraction port for controlling the extraction to keep the pressure inside the processing chamber at the first pressure or the second pressure.

[0014] Further, the processing chamber is configured to, in one processing cycle, first perform a metal oxide removal process on the wafer, and then perform a degassing process on the same wafer; or first perform a degassing process on the wafer, and then perform a metal oxide removal process on the same wafer.

[0015] Further, the first gas inlet and the second gas inlet are provided on the side wall of the processing chamber, the first gas extraction port is provided on the bottom of the processing chamber, the first gas inlet is provided with a first gas inlet control valve, the second gas inlet is provided with a second gas inlet control valve, the first gas extraction port is provided with a first gas extraction control valve, and the second gas inlet is further configured to, while the first gas inlet control valve is open, control the introduction of nitrogen or inert gas into the interior of the processing chamber through the second gas inlet control valve to adjust the concentration or pressure of the introduced formic acid gas; or the second gas inlet is further configured to control the flow rate of the introduced nitrogen or inert gas through the second gas inlet control valve and cooperate with the gas extraction control of the first gas extraction control valve to adjust the pressure inside the processing chamber to achieve a dynamic gas flow under a stable pressure.

[0016] Further, it further includes: a second gas extraction port, which is provided on the bottom or side wall of the processing chamber and is connected to a high-vacuum cold pump; in one processing cycle, after first performing a metal oxide removal process and before performing a degassing process on the same wafer, with the first gas inlet control valve closed, the temperature of the wafer is heated to a third temperature by the heating module, gas is extracted through the first gas extraction port, when the pressure inside the processing chamber is below a third pressure, the first gas extraction control valve is closed, nitrogen or inert gas is introduced through the second gas inlet, when the pressure inside the processing chamber is above a fourth pressure, the second gas inlet control valve is closed, and gas is extracted through the first gas extraction port to make the pressure inside the processing chamber below a fifth pressure for a first exhaust process, and then a degassing process is performed on the same wafer; after sequentially completing the metal oxide removal process and the degassing process in one processing cycle, or after sequentially completing the degassing process and the metal oxide removal process in one processing cycle, with the first gas inlet control valve and the second gas inlet control valve closed, first gas is extracted through the first gas extraction port to make the pressure inside the processing chamber below a seventh pressure, and then gas is extracted through the second gas extraction port to make the pressure inside the processing chamber below an eighth pressure for a second exhaust process, and the second exhaust process is included in one processing cycle.

[0017] Further, another implementation of the first exhaust treatment is that, in the closed state of the first intake control valve, the temperature of the wafer is heated to a third temperature by the heating module, and air is pumped through the first air extraction port. When the internal pressure of the processing chamber is below the third pressure, the first air extraction control valve is closed, and the second air extraction port is opened for air extraction, so that the internal pressure of the processing chamber is below the sixth pressure to perform the first exhaust treatment, and then the same wafer is degassed.

[0018] Further, it further includes: a support platform disposed in the processing chamber, the support platform is used to support the wafer, and the heating module includes a bottom heater disposed on the support platform, and the bottom heater is used to heat the temperature of the wafer to the first temperature, the second temperature or the third temperature.

[0019] Further, the heating module further includes a top heater disposed on the top in the processing chamber, and the top heater is used to cooperate with the bottom heater to rapidly heat the wafer.

[0020] Further, the first air extraction control valve includes a first isolation valve and a butterfly valve. The first isolation valve is used to open or close the first air extraction port, and the butterfly valve is used to control the air extraction by controlling the opening degree of the first air extraction port to control the internal pressure of the processing chamber. The second air extraction port is provided with a second air extraction control valve, and the second air extraction control valve includes a second isolation valve, and the second isolation valve is used to open or close the second air extraction port.

[0021] Further, it further includes: a vacuum pressure gauge disposed on the processing chamber, and the vacuum pressure gauge is used to measure the internal pressure of the processing chamber and cooperate with the butterfly valve to control the internal pressure of the processing chamber.

[0022] Further, it further includes: a gate valve disposed on the processing chamber, the gate valve is located on the side wall of the processing chamber, and a lifting ejector pin is further disposed on the support platform; before processing, the second air extraction port is also opened for air extraction, so that the internal pressure of the processing chamber is below the ninth pressure, and the wafer to be processed is transmitted into the processing chamber through the opened gate valve, placed on the raised lifting ejector pin, and the lifting ejector pin is lowered to place the wafer on the support platform for processing. After completing a processing cycle, the second air extraction port is also opened for air extraction, so that the internal pressure of the processing chamber is below the ninth pressure, and the wafer is lifted from the support platform by raising the lifting ejector pin, and the wafer is transmitted out of the processing chamber through the opened gate valve to complete the entire wafer oxide removal and degassing process.

[0023] The present invention also provides a process equipment, comprising a transfer chamber, a plurality of process chambers surrounding the transfer chamber, and the wafer oxide removal and degassing device as described above, and at least one of the process chambers serves as a processing chamber of the device.

[0024] Further, the process equipment is used to first perform surface metal oxide removal and degassing treatment on a wafer through the processing chamber, and then perform a metal deposition process on the same wafer through a metal deposition chamber; wherein, the process equipment is provided with a transfer chamber and a plurality of process chambers surrounding the transfer chamber, and at least one of the process chambers serves as the processing chamber, and at least one of the rest serves as a metal deposition chamber. The transfer chamber is provided with a wafer inlet and a wafer outlet in parallel. The wafer to be deposited with metal is transmitted into the transfer chamber through the wafer inlet, and is sequentially transmitted between a processing chamber and a metal deposition chamber for sequential processing, and is transmitted out of the process equipment through the wafer outlet after processing; or, the process equipment is provided with a first transfer chamber and a second transfer chamber connected to each other. A plurality of first process chambers surround the first transfer chamber, and at least two of the first process chambers serve as the processing chamber. The first transfer chamber is provided with a wafer inlet and a wafer outlet in parallel. A plurality of second process chambers surround the second transfer chamber. The second process chambers do not serve as the processing chamber, and at least one of the remaining first process chambers or second process chambers serves as a metal deposition chamber. A wafer intermediate inlet and a wafer intermediate outlet are provided in parallel at the connection part of the first transfer chamber and the second transfer chamber for transmitting the wafer between the first transfer chamber and the second transfer chamber. The wafer to be deposited with metal is transmitted into the first transfer chamber through the wafer inlet, and is sequentially transmitted between a processing chamber and a metal deposition chamber for sequential processing, and is transmitted out of the process equipment through the wafer outlet after processing.

[0025] The present invention also provides a method for wafer oxide removal and degassing, comprising:

[0026] Providing a processing chamber;

[0027] Transmitting and placing the wafer to be processed in the processing chamber;

[0028] Performing surface metal oxide removal treatment on the wafer for a first period of time at a first temperature and a first pressure, and performing degassing treatment for removing surface oxygen and water vapor on the same wafer for a second period of time at a second temperature and a second pressure;

[0029] Transmitting the processed wafer out of the processing chamber.

[0030] Further, the method for removing and degassing the wafer oxide includes, in one processing cycle, first performing a metal oxide removal process on the wafer and then performing a degassing process on the same wafer, specifically including:

[0031] Transfer the wafer to be processed into the processing chamber through the opened valve, place it on the raised lifting thimble, and close the valve;

[0032] Open the first gas inlet, introduce formic acid gas into the interior of the processing chamber. During this process, lower the lifting thimble, place the wafer on the support platform, heat the wafer temperature to a first temperature of 150 - 350 °C, and control the internal pressure of the processing chamber at a first pressure of 1 - 760 Torr; wherein, heat the wafer temperature to the first temperature by turning on the bottom heater provided on the support platform, or quickly heat the wafer temperature to the first temperature by simultaneously turning on the bottom heater provided on the support platform and the top heater provided on the top inside the processing chamber; by closing the first gas extraction port, when the internal pressure of the processing chamber reaches the first pressure, close the first gas inlet; or, open the first gas inlet, continuously introduce formic acid gas, and by opening the first gas extraction port and controlling the opening degree of the first gas extraction port, make the internal pressure of the processing chamber reach the first pressure;

[0033] When the wafer temperature reaches the first temperature and the internal pressure reaches the first pressure, maintain for a first time of 5 - 120 s, so that during the heating process inside the processing chamber, the formic acid gas starts to react with the metal oxide on the wafer surface to generate a metal metastable compound, and when the temperature rises to the first temperature, decompose the metal metastable compound, thereby removing the metal oxide on the wafer surface;

[0034] After that, heat the temperature of the wafer to a third temperature of 150 to 350 °C, close the first air inlet, open the first air extraction port to extract air, evacuate the inside of the processing chamber to a pressure below a third pressure of 10 Torr, then close the first air extraction port, open the second air inlet to introduce nitrogen or an inert gas, increase the internal pressure of the processing chamber to a pressure above a fourth pressure of 100 Torr, then close the second air inlet, open the first air extraction port again to extract air, and evacuate the inside of the processing chamber to a pressure below a fifth pressure of 10 Torr to perform a first exhaust treatment; wherein, the first exhaust treatment is performed 1 to 5 times; or, heat the temperature of the wafer to a third temperature of 150 to 350 °C, close the first air inlet, open the first air extraction port to extract air, evacuate the inside of the processing chamber to a pressure below a third pressure of 10 Torr, then close the first air extraction port, open the second air extraction port connected to a high-vacuum cold pump to extract air, and evacuate the inside of the processing chamber to a pressure below a sixth pressure of 1 Torr to perform a first exhaust treatment;

[0035] After that, heat the temperature of the wafer to a second temperature of 150 to 350 °C, open the second air inlet to introduce nitrogen or an inert gas, and control the internal pressure of the processing chamber at a second pressure of 1 to 30 Torr; wherein, close the first air extraction port, and when the internal pressure of the processing chamber reaches the second pressure, close the second air inlet; or, continuously introduce nitrogen or an inert gas through the second air inlet, open the first air extraction port, and control the opening degree of the first air extraction port so that the internal pressure of the processing chamber reaches the second pressure and maintain a dynamic gas flow;

[0036] When the temperature of the wafer reaches the second temperature and the internal pressure reaches the second pressure, maintain for a second time of 15 to 120 s to perform a degassing treatment on the same wafer, so that the formic acid, oxygen, and water vapor remaining on the surface of the wafer are completely separated from the surface of the wafer;

[0037] After that, close the first air inlet and the second air inlet, first extract air through the first air extraction port, evacuate the inside of the processing chamber to a pressure below a seventh pressure of 4 Torr, close the first air extraction port, then extract air through the second air extraction port, and evacuate the inside of the processing chamber to a pressure below an eighth pressure of 1 Torr to perform a second exhaust treatment;

[0038] Finally, keep the second air extraction port in an open air extraction state, make the inside of the processing chamber at a pressure below a ninth pressure of 1 Torr, open the valve, raise the lifting thimble, lift the wafer from the support platform, and transfer the wafer out of the processing chamber to complete the entire wafer oxide removal and degassing treatment process.

[0039] Further, the method for removing oxide and degassing the wafer includes, in a processing cycle, first degassing the wafer and then removing metal oxide from the same wafer, specifically including:

[0040] Transfer the wafer to be processed into the processing chamber through the opened valve, place it on the raised lifting thimble, and close the valve;

[0041] Open the second air inlet to introduce nitrogen or inert gas. During this process, lower the lifting thimble, place the wafer on the support platform, heat the wafer temperature to a second temperature of 150 - 350 °C, and control the internal pressure of the processing chamber at a second pressure of 1 - 30 Torr. Among them, heat the wafer temperature to the second temperature by turning on the bottom heater provided on the support platform, or quickly heat the wafer temperature to the second temperature by simultaneously turning on the bottom heater provided on the support platform and the top heater provided on the top inside the processing chamber; by closing the first air extraction port, when the internal pressure of the processing chamber reaches the second pressure, close the second air inlet, or, continuously introduce nitrogen or inert gas through the second air inlet, open the first air extraction port, and control the opening degree of the first air extraction port to make the internal pressure of the processing chamber reach the second pressure and maintain a dynamic gas flow;

[0042] When the wafer temperature reaches the second temperature and the internal pressure reaches the second pressure, maintain for a second time of 15 - 120 s to degas the wafer, so that the residual oxygen and water vapor on the wafer surface are completely separated from the wafer surface, and then open the first air extraction port to pump air and evacuate the inside of the processing chamber to below a tenth pressure of 10 Torr for the first exhaust treatment;

[0043] After that, heat the wafer temperature to a first temperature of 150 - 350 °C, open the first air inlet, introduce formic acid gas into the inside of the processing chamber, and control the internal pressure of the processing chamber at a first pressure of 1 - 760 Torr. Among them, by closing the first air extraction port, when the internal pressure of the processing chamber reaches the first pressure, close the first air inlet, or, open the first air inlet, continuously introduce formic acid gas, open the first air extraction port, and control the opening degree of the first air extraction port to make the internal pressure of the processing chamber reach the first pressure;

[0044] When the temperature of the wafer reaches the first temperature and the internal pressure reaches the first pressure, maintain for a first time of 5 to 120 s, so that during the heating process inside the processing chamber, formic acid gas starts to react with the metal oxide on the same wafer surface to generate a metal metastable compound, and when the temperature rises to the first temperature, decompose the metal metastable compound, thereby removing the metal oxide on the wafer surface;

[0045] After that, close the first gas inlet and the second gas inlet, first evacuate through the first evacuation port to evacuate the inside of the processing chamber to below the seventh pressure of 4 Torr, close the first evacuation port, and then evacuate through the second evacuation port to evacuate the inside of the processing chamber to below the eighth pressure of 1 Torr for the second exhaust treatment;

[0046] Finally, keep the second evacuation port in an open evacuation state, make the inside of the processing chamber below the ninth pressure of 1 Torr, open the gate valve, raise the lifting ejector pin, lift the wafer from the support platform, and transfer the wafer out of the processing chamber to complete the entire wafer oxide removal and degassing process.

[0047] As can be seen from the above technical solutions, the present invention uses formic acid to perform metal oxide removal treatment and degassing treatment process on the wafer in the same processing chamber. Without introducing plasma to bombard the wafer surface and without generating bombardment defects on the wafer surface, by using a heat treatment method, it can effectively remove the oxide on the metal surface during wafer manufacturing, provide an oxide-free metal layer surface for subsequent metal deposition steps, reduce the series resistance of the interconnection, and effectively remove the residual oxygen and water vapor on the wafer. Thus, using one processing chamber can complete the degassing and pre-cleaning processes that originally needed to be carried out in two different chambers respectively, with the advantages of simplifying the process, saving process time, improving efficiency, increasing production capacity, saving costs, and reducing plasma-induced damage (PID). BRIEF DESCRIPTION OF THE DRAWINGS

[0048] Figure 1 It is a schematic structural diagram of a device for removing wafer oxide and degassing according to a preferred embodiment of the present invention.

[0049] Figure 2 It is a schematic plan layout structure diagram of a process equipment according to a preferred embodiment one of the present invention.

[0050] Figure 3 It is a schematic plan layout structure diagram of a process equipment according to a preferred embodiment two of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0051] To make the objectives, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be described clearly and completely below. Apparently, the described embodiments are some but not all of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein shall have the ordinary meanings understood by those of ordinary skill in the art to which the present invention pertains. The words such as "including" used herein mean that the elements or objects appearing before this word cover the elements or objects enumerated after this word and their equivalents, without excluding other elements or objects.

[0052] The following further elaborates on the specific implementation manners of the present invention with reference to the accompanying drawings.

[0053] Reference Figure 1 An apparatus for removing oxide and degassing a wafer according to the present invention includes a processing chamber 10, a heating module 14, a first gas inlet 13, a second gas inlet 12, and a first pumping port 16.

[0054] Among them, the processing chamber 10 is used to remove the surface metal oxide of the wafer 20 for a first period of time at a first temperature and a first pressure; the same processing chamber 10 is also used to remove surface oxygen and water vapor from the same wafer 20 for a second period of time at a second temperature and a second pressure for degassing treatment.

[0055] The heating module 14 is disposed in the processing chamber 10 and is used to heat the temperature of the wafer 20 to the first temperature or the second temperature, so that the wafer 20 is subjected to surface metal oxide removal treatment at the first temperature and the first pressure, and the wafer 20 is subjected to degassing treatment at the second temperature and the second pressure.

[0056] The first gas inlet 13 is disposed on a side wall (such as Figure 1 the left side in) of the processing chamber 10, and is used to introduce formic acid gas into the interior of the processing chamber 10 to react with the metal oxide on the surface of the wafer 20 at the first temperature and the first pressure, so as to remove the metal oxide on the surface of the wafer 20.

[0057] The second gas inlet 12 is disposed on the side wall of the processing chamber 10 (such as the side wall of the processing chamber 10 on the same side as the first gas inlet 13), and is used to introduce nitrogen or an inert gas (such as argon) into the interior of the processing chamber 10 when the first gas inlet 13 is closed, that is, in the processing stage of non-removing metal oxide, so as to perform degassing treatment on the wafer 20 at the second temperature and the second pressure.

[0058] The first air extraction port 16 is provided on the bottom of the processing cavity 10 and is used to control the air extraction, that is, by controlling the opening degree of the first air extraction port 16, to control the internal pressure of the processing cavity 10 to reach and maintain the first pressure or the second pressure, so as to perform metal oxide removal treatment and degassing treatment respectively.

[0059] It should be noted that in one processing cycle, the processing cavity 10 can be used to first perform metal oxide removal treatment on the wafer 20 and then perform degassing treatment on the same wafer 20, or it can also be used to first perform degassing treatment on the wafer 20 and then perform metal oxide removal treatment on the same wafer 20. That is, the sequence of the two processes of metal oxide removal treatment and degassing treatment in one processing cycle of the processing cavity 10 can be interchanged.

[0060] In some embodiments, a first intake air control valve 131 is provided on the first intake air port 13, a second intake air control valve 121 is provided on the second intake air port 12, and a first air extraction control valve 161 is provided on the first air extraction port 16. The second intake air port 12 is also used to control the flow rate of nitrogen or inert gas introduced into the interior of the processing cavity 10 through the second intake air control valve 121 while the first intake air control valve 131 is opened to introduce formic acid, so as to adjust the concentration or pressure of the introduced formic acid gas. The first intake air control valve 131 and the second intake air control valve 121 can be flow control valves.

[0061] In some embodiments, the second intake air port 12 is also used to control the flow rate of nitrogen or inert gas introduced through the second intake air control valve 121 and cooperate with the air extraction control function of the first air extraction control valve 161 to adjust the internal pressure of the processing cavity 10, so that the internal pressure of the processing cavity 10 reaches the first pressure or the second pressure, that is, to make the internal pressure of the processing cavity 10 reach a dynamic gas flow under a stable pressure.

[0062] Reference Figure 1 . In some embodiments, a second air extraction port 17 is further included. The second air extraction port 17 is provided on the bottom of the processing cavity 10 and is disposed on the left and right sides of the bottom of the processing cavity 10 with the first air extraction port 16. Alternatively, the second air extraction port 17 can also be provided on the side wall of the processing cavity 10. The second air extraction port 17 is connected to a high-vacuum cold pump; when the high-vacuum cold pump is turned on, a very high vacuum degree can be generated inside the processing cavity 10. A second air extraction control valve 171 is provided on the second air extraction port 17.

[0063] In some embodiments, in a processing cycle where the metal oxide on the wafer 20 is first removed and then the same wafer 20 is degassed, a first exhaust gas treatment process is provided between the two processes of metal oxide removal and degassing. With the first intake control valve 131 closed, the temperature of the wafer 20 is heated to a third temperature by the heating module 14, and air is exhausted through the opening of the first air extraction port 16 (first air extraction control valve 161). When the internal pressure of the processing chamber 10 is below the third pressure, the first air extraction control valve 161 is closed, and nitrogen or an inert gas is introduced through the opening of the second intake port 12 (second intake control valve 121). When the internal pressure of the processing chamber 10 is above the fourth pressure, the second intake control valve 121 is closed, and air is exhausted through the first air extraction port 16 to make the internal pressure of the processing chamber 10 below the fifth pressure, so as to perform the first exhaust gas treatment, and then the same wafer 20 is degassed.

[0064] In some embodiments, another implementation of the first exhaust gas treatment is that with the first intake control valve 131 closed, the temperature of the wafer 20 is heated to a third temperature by the heating module 14, and air is exhausted through the first air extraction port 16. When the internal pressure of the processing chamber 10 is below the third pressure, the first air extraction control valve 161 is closed, and the second air extraction port 17 is opened for air extraction to make the internal pressure of the processing chamber 10 below the sixth pressure, so as to perform the first exhaust gas treatment, and then the same wafer 20 is degassed.

[0065] In some embodiments, after the metal oxide removal process and the degassing process in a processing cycle are sequentially completed, or after the degassing process and the metal oxide removal process in a processing cycle are sequentially completed, a second exhaust gas treatment process is provided. With the first intake control valve 131 and the second intake control valve 121 closed, air is first exhausted through the first air extraction port 16 to make the internal pressure of the processing chamber 10 below the seventh pressure, and then air is exhausted through the second air extraction port 17 to make the internal pressure of the processing chamber 10 below the eighth pressure, so as to perform the second exhaust gas treatment. The first exhaust gas treatment and the second exhaust gas treatment are included in one processing cycle.

[0066] Reference Figure 1 . In some embodiments, it further includes a support platform 18 provided in the processing chamber 10; the support platform 18 is located on the bottom of the processing chamber 10 and is used to support the wafer 20. The heating module 14 includes a bottom heater 142 provided on the support platform 18; the bottom heater 142 is used to heat the temperature of the wafer 20 to the first temperature, the second temperature, or the third temperature.

[0067] Further, the heating module 14 further includes a top heater 141 disposed on the top inside the processing chamber 10; the top heater 141 is used to cooperate with the bottom heater 142 to rapidly heat the wafer 20. The bottom heater 142 may employ a resistance heater, and the top heater 141 may employ a heating lamp.

[0068] For example, a metal interconnect layer may be fabricated on the wafer 20 to be processed, or a metal redistribution layer (RDL) and an under bump metallization layer (UBM) deposited during wafer-level advanced packaging. And a natural metal oxide layer will be generated on the exposed surface of the interconnect metal on the metal interconnect layer, or on the exposed surface of the metal of the metal redistribution layer or the under bump metallization layer. In order to reduce the increase in the chip contact resistance caused by the metal oxide, before subsequent metal deposition, it is necessary to first remove this metal oxide, and then continue to deposit a new metal on the metal surface after the metal oxide is removed to form an interconnect or as a contact layer.

[0069] By using formic acid gas to heat-treat and remove the oxide on the metal surface of the wafer 20, the metal oxide on the wafer 20 can be effectively removed without introducing plasma or reactive atomic groups. This can not only simplify the device structure, improve the removal efficiency of the metal oxide, but also avoid the problems of wafer discharge and damage to the dielectric layer caused by plasma bombardment in the past. When the present invention is applied to advanced wafer-level packaging, it can also significantly reduce the generation of particles in the chamber, extend the service life of the chamber, save material costs, thereby improving production efficiency and reducing the cost of the equipment.

[0070] In some embodiments, the first air extraction control valve 161 includes a first isolation valve 1612 and a butterfly valve 1611. Among them, the first isolation valve 1612 is used to open or close the first air extraction port 16, and the butterfly valve 1611 is used to control the air extraction by controlling the opening degree of the first air extraction port 16 to control the internal pressure of the processing chamber 10 to reach a set value. The second air extraction control valve 171 provided at the second air extraction port 17 includes a second isolation valve; the second isolation valve is used to open or close the second air extraction port 17 to enable the high-vacuum cold pump to work or close.

[0071] In some embodiments, a vacuum pressure gauge 11 is further provided on the processing chamber 10; the vacuum pressure gauge 11 is used to measure the internal pressure of the processing chamber 10 and can cooperate with the butterfly valve 1611 to perform closed-loop control on the high and low of the internal pressure of the processing chamber 10.

[0072] In some embodiments, it further includes a gate valve 15 provided on the processing chamber 10; the gate valve 15 is located on the side wall of the processing chamber 10 (such as Figure 1On the right side wall). There is also a lifting ejector pin (not shown) on the support platform 18. Before processing, the processing chamber 10 also opens the second air extraction port 17 for air extraction, so that the inside of the processing chamber 10 is below the ninth pressure. The wafer 20 to be processed is transmitted into the processing chamber 10 through the opened valve 15, placed on the lifted lifting ejector pin, and the lifting ejector pin descends to place the wafer 20 on the support platform 18 for processing. After completing a processing cycle, the processing chamber 10 also opens the second air extraction port 17 for air extraction, so that the inside of the processing chamber 10 is below the ninth pressure, and by lifting the lifting ejector pin, the wafer 20 is lifted from the support platform 18, and the wafer 20 is transmitted out of the processing chamber 10 through the opened valve 15, completing the entire wafer oxide removal and degassing process.

[0073] In some embodiments, the present invention can be used to heat-treat and remove the oxides of the corresponding metals generated on the patterned surfaces of metals Sn, Cu, Pb, Ni, Au, Al, Pt, or Ag on the wafer 20, and can also be used to heat-treat and remove the oxides of alloys of at least two of the metals Sn, Cu, Pb, Ni, Au, Al, Pt, and Ag on the wafer 20.

[0074] Reference Figure 2 And in combination with reference Figure 1 A process equipment of the present invention includes a transfer chamber TM, a plurality of process chambers PC surrounding the transfer chamber TM, and the wafer oxide removal and degassing device of the present invention described above, and at least one process chamber PC serves as the processing chamber 10 of the device.

[0075] Furthermore, the process equipment is used to first perform surface metal oxide removal and degassing treatment on the wafer 20 through the processing chamber 10, and then perform a metal deposition process on the same wafer 20 through a metal deposition chamber. The process equipment can be a PVD equipment or a CVD equipment, but is not limited thereto.

[0076] In some embodiments, the process equipment is provided with a transfer chamber TM, a plurality of process chambers PC surrounding the transfer chamber TM, and at least one process chamber PC serves as the processing chamber 10, and at least one of the remaining process chambers PC serves as a metal deposition chamber. The transfer chamber TM is provided with a wafer inlet and a wafer outlet in parallel.

[0077] For example, a process chamber PC serving as a processing chamber 10 and three process chambers PC serving as metal deposition chambers are sequentially provided on the process equipment in a clockwise direction starting from the wafer inlet. Alternatively, two process chambers PC serving as processing chambers 10 are sequentially provided on the process equipment on the wafer inlet side, and two process chambers PC serving as metal deposition chambers are sequentially provided on the wafer outlet side. Different numbers of processing chambers 10 and metal deposition chambers can be configured according to production capacity requirements.

[0078] The wafer 20 to be deposited with metal is transmitted from the wafer inlet into the transfer chamber TM, and is sequentially transferred between a processing chamber 10 and a metal deposition chamber, and is sequentially processed for oxide removal and degassing and metal deposition respectively. After processing, it is transmitted out of the process equipment through the wafer outlet. Combinatorial configurations can be made between the processing chamber 10 and the metal deposition chamber according to production rhythm requirements.

[0079] Reference Figure 3 And in combination with reference Figure 1 In some embodiments, a process equipment of the present invention is provided with a connected first transfer chamber TM1 and a second transfer chamber TM2. Among them, a plurality of first process chambers PC1 are arranged around the first transfer chamber TM1, and at least two first process chambers PC1 serve as processing chambers 10. A wafer inlet A and a wafer outlet B are arranged in parallel on the first transfer chamber TM1. A plurality of second process chambers PC2 are arranged around the second transfer chamber TM2, and the second process chambers PC2 do not serve as processing chambers 10; and at least one of the remaining first process chambers PC1 or second process chambers PC2 other than the processing chamber 10 serves as a metal deposition chamber. A wafer intermediate inlet C and a wafer intermediate outlet D are arranged in parallel at the connection part of the first transfer chamber TM1 and the second transfer chamber TM2 for transferring wafers between the first transfer chamber TM1 and the second transfer chamber TM2 when required by the process.

[0080] For example, there are four first process chambers PC1 surrounding the first transfer chamber TM1 on the process equipment. One first process chamber PC1 serving as the processing chamber 10 is provided on each side of the wafer inlet A and the wafer outlet B, and the remaining two first process chambers PC1 are used as metal deposition chambers (PVD deposition chambers or CVD deposition chambers) or plasma process treatment chambers (for performing various plasma processes), or they can also be the processing chamber 10. Alternatively, on the process equipment around the first transfer chamber TM1, one first process chamber PC1 serving as the processing chamber 10 is provided on each side of the wafer inlet A and the wafer outlet B, and one of the remaining two first process chambers PC1 is used as a metal deposition chamber (PVD deposition chamber or CVD deposition chamber) or a plasma process treatment chamber, and the other is used as the processing chamber 10. There are four second process chambers PC2 surrounding the second transfer chamber TM2, and all these four second process chambers PC2 are used as metal deposition chambers (PVD deposition chambers or CVD deposition chambers).

[0081] The wafer 20 to be deposited with metal is transmitted from the wafer inlet A into the first transfer chamber TM1, and is sequentially transmitted between a processing chamber 10 and any one of the metal deposition chambers for sequential processing of oxide removal, degassing, and metal deposition respectively. After the processing, it is transmitted out of the process equipment through the wafer outlet B, or after oxide removal and degassing in a processing chamber 10, it is transmitted into the second transfer chamber TM2 through the wafer middle inlet C, and after metal deposition in one of the metal deposition chambers, it is sequentially transmitted out of the process equipment through the wafer middle outlet D and the wafer outlet B. When a plasma process treatment chamber is provided, according to the process requirements, the wafer 20 can also be transmitted into the plasma process treatment chamber for corresponding plasma processing. In this way, the time required for the wafer to be transmitted between the degassing chamber and the pre-cleaning chamber in the past, and the total time for separate processing are saved, and one of the saved chambers can be used as a metal deposition chamber or other chambers (such as a plasma process treatment chamber), thereby saving the total time of the processing process, improving the efficiency and production capacity, reducing the cost accordingly, and also reducing the equipment cost due to eliminating the pre-cleaning chamber, and multiple processes can be integrated on the same process equipment for processing.

[0082] The following further details a method for removing oxide and degassing a wafer of the present invention through specific embodiments in conjunction with the drawings.

[0083] A method for removing oxide and degassing a wafer of the present invention can be implemented using, for example Figure 1 a device for removing oxide and degassing a wafer of the present invention as shown, and can be further, for example Figure 2 or Figure 3It is implemented on a process equipment integrated with a device for removing oxide and degassing of wafers according to the present invention.

[0084] A method for removing oxide and degassing of wafers according to the present invention includes:

[0085] Providing a processing chamber;

[0086] Transferring and placing the wafer to be processed into the processing chamber;

[0087] Then, at a first temperature and a first pressure, performing a first-time surface metal oxide removal treatment on the wafer, and at a second temperature and a second pressure, performing a second-time degassing treatment for removing surface oxygen and water vapor on the same wafer;

[0088] Transferring the processed wafer out of the processing chamber.

[0089] Reference Figure 1 (Combined with reference Figure 2 or Figure 3 ). In some embodiments, the method for removing oxide and degassing of wafers includes, in one processing cycle, first performing a metal oxide removal treatment on the wafer 20 and then performing a degassing treatment on the same wafer 20, specifically including the following steps:

[0090] First, transfer the wafer 20 to be processed into the processing chamber 10 through the opened valve 15, place it on the raised lifting thimble, and close the valve 15.

[0091] Then, open the first intake control valve 131 provided on the first intake port 13 to introduce formic acid gas into the interior of the processing chamber 10. During this process, lower the lifting thimble to place the wafer 20 on the support platform 18, and heat the temperature of the wafer 20 to a first temperature of 150 - 350 °C through the heating module 14, and control the internal pressure of the processing chamber 10 at a first pressure of 1 - 760 Torr.

[0092] In some embodiments, heat the temperature of the wafer 20 to the first temperature by opening the bottom heater 142 provided on the support platform 18. Or, heat the temperature of the wafer 20 to the first temperature quickly by simultaneously opening the bottom heater 142 provided on the support platform 18 and the top heater 141 provided on the top inside the processing chamber 10.

[0093] In some embodiments, by closing the first air extraction control valve 16 provided on the first air extraction port 16, when the internal pressure of the processing chamber 10 reaches the first pressure, the first air intake control valve 131 provided on the first air intake port 13 is closed. Alternatively, the first air intake control valve 131 provided on the first air intake port 13 is opened, and formic acid gas is continuously introduced (and the concentration of formic acid can be adjusted by simultaneously opening the second air intake control valve 121 provided on the second air intake port 12 to introduce a certain amount of nitrogen or inert gas). By opening the first air extraction control valve 16 provided on the first air extraction port 16 and controlling the opening degree of the first air extraction port 16 through the butterfly valve 1611, the internal pressure of the processing chamber 10 reaches the first pressure, and a dynamic gas flow is maintained.

[0094] When the temperature of the wafer 20 reaches the first temperature and the internal pressure reaches the first pressure, maintain for a first time of 5 to 120 s, so that during the heating process inside the processing chamber 10, the formic acid gas starts to react with the metal oxide on the surface of the wafer 20 to generate a metal metastable compound, and when the temperature rises to the first temperature, the metal metastable compound decomposes, thereby removing the metal oxide on the surface of the wafer 20.

[0095] After that, a first exhaust treatment is performed. In some embodiments, the temperature of the wafer 20 is heated to a third temperature of 150 to 350 °C by the heating module 14, the first air intake port 13 is closed, the first air extraction port 16 is opened for air extraction, and the inside of the processing chamber 10 is evacuated to a pressure below a third pressure of 10 Torr. Then, the first air extraction port 16 is closed, the second air intake port 12 is opened to introduce nitrogen or inert gas, and after the internal pressure of the processing chamber 10 is increased to a pressure above a fourth pressure of 100 Torr, the second air intake port 12 is closed, and the first air extraction port 16 is opened again for air extraction, and the inside of the processing chamber 10 is evacuated to a pressure below a fifth pressure of 10 Torr to perform the first exhaust treatment. Among them, the first exhaust treatment with no more than 5 cycles can be performed by repeating the operation of closing the first air extraction port 16 again, opening the second air intake port 12 to introduce nitrogen or inert gas, increasing the internal pressure of the processing chamber 10 to a pressure above the fourth pressure of 100 Torr, closing the second air intake port 12, and opening the first air extraction port 16 again for air extraction to evacuate the inside of the processing chamber 10 to a pressure below the fifth pressure of 10 Torr.

[0096] In some embodiments, when performing the first exhaust treatment, another method can also be adopted, that is: heating the temperature of the wafer 20 to a third temperature of 150 - 350 °C, closing the first air inlet 13, opening the first air extraction port 16 for air extraction, and evacuating the inside of the processing chamber 10 to a pressure below a third pressure of 10 Torr. Then, closing the first air extraction port 16, opening the second air extraction control valve 171 provided at the second air extraction port 17 connected to the high-vacuum cold pump for air extraction, and evacuating the inside of the processing chamber 10 to a pressure below a sixth pressure of 1 Torr to perform the first exhaust treatment.

[0097] After that, heating the temperature of the wafer 20 to a second temperature of 150 - 350 °C through the heating module 14, opening the second air inlet 12 to introduce nitrogen or inert gas, and controlling the internal pressure of the processing chamber 10 at a second pressure of 1 - 30 Torr.

[0098] In some embodiments, by closing the first air extraction port 16, when the internal pressure of the processing chamber 10 reaches the second pressure, closing the second air inlet 12.

[0099] In some embodiments, continuously introducing nitrogen or inert gas through the second air inlet 12, opening the first air extraction port 16, and controlling the opening degree of the first air extraction port 16 to make the internal pressure of the processing chamber 10 reach the second pressure and maintain a dynamic gas flow.

[0100] When the temperature of the wafer 20 reaches the second temperature and the internal pressure reaches the second pressure, maintaining for a second time of 15 - 120 s to perform a degassing treatment on the same wafer 20, so that the formic acid, oxygen, and water vapor remaining on the surface of the wafer 20 are completely separated from the surface of the wafer 20.

[0101] After that, closing the first air inlet 13 and the second air inlet 12, first performing air extraction through the first air extraction port 16 to evacuate the inside of the processing chamber 10 to a pressure below a seventh pressure of 4 Torr, closing the first air extraction port 16, and then performing air extraction through the second air extraction port 17 to evacuate the inside of the processing chamber 10 to a pressure below an eighth pressure of 1 Torr to perform the second exhaust treatment.

[0102] Finally, keeping the second air extraction port 17 in an open air extraction state, making the inside of the processing chamber 10 at a pressure below a ninth pressure of 1 Torr, opening the gate valve 15, raising the lifting thimble, lifting the wafer 20 from the support platform 18, and transferring the wafer 20 out of the processing chamber 10 to complete the entire wafer oxide removal and degassing treatment process.

[0103] Reference Figure 1 (Combined with reference Figure 2 or Figure 3)). In some embodiments, a method for removing wafer oxide and degassing includes first degassing the wafer 20 and then removing metal oxide from the same wafer 20, specifically including the following steps:

[0104] First, the wafer 20 to be processed is transferred into the processing chamber 10 through the opened valve 15, placed on the raised lifting thimble, and the valve 15 is closed.

[0105] Then, nitrogen or an inert gas is introduced through the second inlet 12. During this process, the lifting thimble descends, the wafer 20 is placed on the support platform 18, and the temperature of the wafer 20 is heated to a second temperature of 150 - 350 °C, and the internal pressure of the processing chamber 10 is controlled at a second pressure of 1 - 30 Torr.

[0106] In some embodiments, the temperature of the wafer 20 is heated to the second temperature by turning on the bottom heater 142 provided on the support platform 18. Alternatively, the temperature of the wafer 20 is quickly heated to the second temperature by simultaneously turning on the bottom heater 142 provided on the support platform 18 and the top heater 141 provided on the top inside the processing chamber 10.

[0107] In some embodiments, when the internal pressure of the processing chamber 10 reaches the second pressure, the second inlet 12 is closed by closing the first exhaust port 16.

[0108] In some embodiments, nitrogen or an inert gas is continuously introduced through the second inlet 12, the first exhaust port 16 is opened, and the opening degree of the first exhaust port 16 is controlled to make the internal pressure of the processing chamber 10 reach the second pressure and maintain a dynamic gas flow.

[0109] When the temperature of the wafer 20 reaches the second temperature and the internal pressure reaches the second pressure, it is maintained for a second time of 15 - 120 s to degas the wafer 20, so that the residual oxygen and water vapor on the surface of the wafer 20 are completely separated from the surface of the wafer 20, and then the first exhaust port 16 is opened for pumping to evacuate the inside of the processing chamber 10 to a tenth pressure below 10 Torr for the first exhaust process.

[0110] After that, the temperature of the wafer 20 is heated to a first temperature of 150 - 350 °C, the first inlet 13 is opened, formic acid gas is introduced into the inside of the processing chamber 10, and the internal pressure of the processing chamber 10 is controlled at a first pressure of 1 - 760 Torr.

[0111] In some embodiments, when the internal pressure of the processing chamber 10 reaches the first pressure, the first inlet 13 is closed by closing the first exhaust port 16.

[0112] In some embodiments, the first intake port 13 is opened, and formic acid gas is continuously introduced. By opening the first exhaust port 16 and controlling the opening degree of the first exhaust port 16, the internal pressure of the processing chamber 10 is brought to a first pressure, and a dynamic gas flow is maintained.

[0113] When the temperature of the wafer 20 reaches a first temperature and the internal pressure reaches a first pressure, a first time of 5 - 120 s is maintained, so that during the heating process inside the processing chamber 10, the formic acid gas starts to react with the metal oxide on the surface of the same wafer 20 to form a metal metastable compound, and when the temperature rises to the first temperature, the metal metastable compound decomposes, thereby removing the metal oxide on the surface of the wafer 20.

[0114] After that, the first intake port 13 and the second intake port 12 are closed. First, the processing chamber 10 is evacuated through the first exhaust port 16 to a pressure below a seventh pressure of 4 Torr, the first exhaust port 16 is closed, and then the processing chamber 10 is evacuated through the second exhaust port 17 to a pressure below an eighth pressure of 1 Torr for a second exhaust treatment.

[0115] Finally, the second exhaust port 17 is kept in an open exhaust state, so that the internal pressure of the processing chamber 10 is below a ninth pressure of 1 Torr. The gate valve 15 is opened, the lifting thimble is raised, the wafer 20 is lifted from the support platform 18, and the wafer 20 is transferred out of the processing chamber 10 to complete the entire wafer oxide removal and degassing process.

[0116] In summary, in the present invention, by using formic acid to perform metal oxide removal treatment and degassing treatment process on the wafer 20 in the same processing chamber 10, without introducing plasma bombardment on the surface of the wafer 20 and without generating bombardment defects on the surface of the wafer 20, a heat treatment method can be used to effectively remove the oxide on the metal surface during the manufacture of the wafer 20, provide a metal layer surface without oxide for subsequent metal deposition steps, reduce the series resistance of the interconnection, and effectively remove the residual oxygen and water vapor on the wafer 20. Thus, by using one processing chamber 10, the degassing and pre - cleaning processes that originally needed to be carried out in two different chambers can be completed, achieving the comprehensive effects of simplifying the process, saving process time, improving efficiency, increasing production capacity, saving costs, and reducing plasma - induced damage (PID).

[0117] Although the embodiments of the present invention have been described in detail above, it is obvious to those skilled in the art that various modifications and changes can be made to these embodiments. However, it should be understood that such modifications and changes are all within the scope and spirit of the present invention described in the claims. Moreover, the present invention described herein can have other embodiments and can be implemented or realized in various ways.

Claims

1. A device for wafer oxide removal and degassing, characterized in that, Comprising: A processing chamber for removing surface metal oxides of a wafer for a first period of time at a first temperature and a first pressure, and for degassing the same wafer to remove surface oxygen and water vapor for a second period of time at a second temperature and a second pressure; A heating module for heating the temperature of the wafer to the first temperature or the second temperature; A first gas inlet for introducing formic acid gas into the interior of the processing chamber to remove the metal oxides on the surface of the wafer; A second gas inlet for introducing nitrogen or inert gas into the interior of the processing chamber to degas the wafer when the first gas inlet is closed; A first air extraction port for maintaining the interior of the processing chamber at the first pressure or the second pressure through air extraction control; 2. The device for wafer oxide removal and degassing according to claim 1, characterized in that, The processing chamber is configured to, in one processing cycle, first perform a metal oxide removal process on the wafer and then perform a degassing process on the same wafer, or first perform a degassing process on the wafer and then perform a metal oxide removal process on the same wafer.

3. The device for wafer oxide removal and degassing according to claim 2, characterized in that, The first gas inlet and the second gas inlet are provided on the side wall of the processing chamber, the first air extraction port is provided on the bottom of the processing chamber, the first gas inlet is provided with a first gas inlet control valve, the second gas inlet is provided with a second gas inlet control valve, the first air extraction port is provided with a first air extraction control valve, and the second gas inlet is further configured to, while the first gas inlet control valve is open, control the introduction of nitrogen or inert gas into the interior of the processing chamber through the second gas inlet control valve to adjust the concentration or pressure of the introduced formic acid gas; or, the second gas inlet is further configured to control the flow rate of the introduced nitrogen or inert gas through the second gas inlet control valve and cooperate with the air extraction control of the first air extraction control valve to adjust the pressure inside the processing chamber to achieve a dynamic gas flow under a stable pressure.

4. The apparatus for wafer oxide removal and degassing according to claim 3, wherein Further comprising: A second air extraction port, the second air extraction port is provided on the bottom or the side wall of the processing chamber and is connected to a high-vacuum cold pump; in one processing cycle, after first performing a metal oxide removal process and before performing a degassing process on the same wafer, with the first gas inlet control valve closed, the temperature of the wafer is heated to a third temperature by the heating module, air is extracted through the first air extraction port, when the interior of the processing chamber is below a third pressure, the first air extraction control valve is closed, nitrogen or inert gas is introduced through the second gas inlet, when the interior of the processing chamber is above a fourth pressure, the second gas inlet control valve is closed, and air is extracted through the first air extraction port to make the interior of the processing chamber below a fifth pressure for a first exhaust process, and then a degassing process is performed on the same wafer; After successively completing the metal oxide removal process and the degassing process in a processing cycle, or after successively completing the degassing process and the metal oxide removal process in a processing cycle, while the first intake control valve and the second intake control valve are in the closed state, first evacuate through the first evacuation port to make the internal pressure of the processing chamber below the seventh pressure, and then evacuate through the second evacuation port to make the internal pressure of the processing chamber below the eighth pressure, so as to perform the second exhaust process, and the second exhaust process is included in a processing cycle.

5. The device for wafer oxide removal and degassing according to claim 4, wherein, Another implementation of the first exhaust process is that with the first intake control valve in the closed state, heat the temperature of the wafer to the third temperature through the heating module, evacuate through the first evacuation port, and when the internal pressure of the processing chamber is below the third pressure, close the first evacuation control valve and open the second evacuation port to evacuate, so that the internal pressure of the processing chamber is below the sixth pressure to perform the first exhaust process, and then perform the degassing process on the same wafer.

6. The device for wafer oxide removal and degassing according to claim 5, wherein, It further includes: A support platform provided in the processing chamber, the support platform is used to support the wafer, and the heating module includes a bottom heater provided on the support platform, and the bottom heater is used to heat the temperature of the wafer to the first temperature, the second temperature or the third temperature.

7. The device for wafer oxide removal and degassing according to claim 6, characterized in that, The heating module further includes a top heater provided on the top inside the processing chamber, and the top heater is used to cooperate with the bottom heater to rapidly heat the wafer.

8. The apparatus for wafer oxide removal and degassing according to claim 5, wherein, The first evacuation control valve includes a first isolation valve and a butterfly valve. The first isolation valve is used to open or close the first evacuation port, and the butterfly valve is used to control the evacuation by controlling the opening degree of the first evacuation port to control the internal pressure of the processing chamber. The second evacuation port is provided with a second evacuation control valve, and the second evacuation control valve includes a second isolation valve, and the second isolation valve is used to open or close the second evacuation port.

9. The device for wafer oxide removal and degassing according to claim 8, characterized in that, It further includes: A vacuum pressure gauge provided on the processing chamber, and the vacuum pressure gauge is used to measure the internal pressure of the processing chamber and cooperate with the butterfly valve to control the internal pressure of the processing chamber.

10. The wafer oxide removal and degassing device according to claim 6, wherein, It further includes: A gate valve provided on the processing chamber, the gate valve is located on the side wall of the processing chamber, and a lifting ejector pin is further provided on the support platform; before processing, also open the second evacuation port to evacuate, so that the internal pressure of the processing chamber is below the ninth pressure, transfer the wafer to be processed into the processing chamber through the opened gate valve, place it on the lifted lifting ejector pin, and lower the lifting ejector pin to place the wafer on the support platform for processing. After completing a processing cycle, also open the second evacuation port to evacuate, so that the internal pressure of the processing chamber is below the ninth pressure, and lift the wafer from the support platform by raising the lifting ejector pin, and transfer the wafer out of the processing chamber through the opened gate valve to complete the entire wafer oxide removal and degassing process.

11. A process equipment, characterized in that, It includes a transfer cavity, a plurality of process cavities surrounding the transfer cavity, and the wafer oxide removal and degassing device according to any one of claims 1-10, and at least one of the process cavities serves as the processing cavity of the device.

12. The process equipment according to claim 11, characterized in that, The process equipment is used to first perform surface metal oxide removal and degassing treatment on the wafer through the processing cavity, and then perform metal deposition process treatment on the same wafer through the metal deposition cavity; wherein, the process equipment is provided with a transfer cavity and a plurality of process cavities surrounding the transfer cavity, and at least one of the process cavities serves as the processing cavity, and at least one of the rest serves as the metal deposition cavity. The transfer cavity is provided with a wafer inlet and a wafer outlet in parallel. The wafer to be deposited with metal is transmitted into the transfer cavity through the wafer inlet, and is sequentially transmitted between a processing cavity and a metal deposition cavity for sequential processing, and is transmitted out of the process equipment through the wafer outlet after processing; or, the process equipment is provided with a connected first transfer cavity and a second transfer cavity. The first transfer cavity is surrounded by a plurality of first process cavities, and at least two of the first process cavities serve as the processing cavity. The first transfer cavity is provided with a wafer inlet and a wafer outlet in parallel. The second transfer cavity is surrounded by a plurality of second process cavities. The second process cavities do not serve as the processing cavity, and at least one of the remaining first process cavities or second process cavities serves as the metal deposition cavity. The connected part of the first transfer cavity and the second transfer cavity is provided with a wafer intermediate inlet and a wafer intermediate outlet for transmitting the wafer between the first transfer cavity and the second transfer cavity. The wafer to be deposited with metal is transmitted into the first transfer cavity through the wafer inlet, and is sequentially transmitted between a processing cavity and a metal deposition cavity for sequential processing, and is transmitted out of the process equipment through the wafer outlet after processing.

13. A method for removing oxide and degassing a wafer, characterized in that, It includes: Provide a processing cavity; Transmit and place the wafer to be processed in the processing cavity; Perform surface metal oxide removal treatment on the wafer for a first time at a first temperature and a first pressure, and perform degassing treatment for removing surface oxygen and water vapor on the same wafer for a second time at a second temperature and a second pressure; Transmit the processed wafer out of the processing cavity.

14. The method for removing oxide and degassing a wafer according to claim 13, characterized in that, The method for wafer oxide removal and degassing includes, in a processing cycle, first performing metal oxide removal treatment on the wafer, and then performing degassing treatment on the same wafer, specifically including: Transmit the wafer to be processed into the processing cavity through the opened valve, place it on the raised lifting thimble, and close the valve; Open the first intake port and introduce formic acid gas into the interior of the processing chamber. During this process, lower the lifting ejector pin, place the wafer on the support platform, heat the temperature of the wafer to a first temperature of 150 - 350 °C, and control the internal pressure of the processing chamber at a first pressure of 1 - 760 Torr; wherein, heat the temperature of the wafer to the first temperature by turning on the bottom heater provided on the support platform, or quickly heat the temperature of the wafer to the first temperature by simultaneously turning on the bottom heater provided on the support platform and the top heater provided on the top inside the processing chamber; by closing the first exhaust port, when the internal pressure of the processing chamber reaches the first pressure, close the first intake port; or, open the first intake port, continuously introduce formic acid gas, open the first exhaust port, and control the opening degree of the first exhaust port to make the internal pressure of the processing chamber reach the first pressure; When the temperature of the wafer reaches the first temperature and the internal pressure reaches the first pressure, maintain for a first time of 5 - 120 s, so that during the temperature rise process inside the processing chamber, the formic acid gas starts to react with the metal oxide on the surface of the wafer to generate a metal metastable compound, and when the temperature rises to the first temperature, the metal metastable compound decomposes, thereby removing the metal oxide on the surface of the wafer; After that, heat the temperature of the wafer to a third temperature of 150 - 350 °C, close the first intake port, open the first exhaust port for pumping, evacuate the interior of the processing chamber to below a third pressure of 10 Torr, then, close the first exhaust port, open the second intake port to introduce nitrogen or inert gas, raise the internal pressure of the processing chamber to above a fourth pressure of 100 Torr, then close the second intake port, and open the first exhaust port again for pumping, evacuate the interior of the processing chamber to below a fifth pressure of 10 Torr to perform a first exhaust treatment; wherein, the first exhaust treatment is performed 1 - 5 times; or, heat the temperature of the wafer to a third temperature of 150 - 350 °C, close the first intake port, open the first exhaust port for pumping, evacuate the interior of the processing chamber to below a third pressure of 10 Torr, then, close the first exhaust port, open the second exhaust port connected to the high-vacuum cold pump for pumping, evacuate the interior of the processing chamber to below a sixth pressure of 1 Torr to perform a first exhaust treatment; After that, heat the temperature of the wafer to a second temperature of 150 - 350 °C, open the second intake port to introduce nitrogen or inert gas, and control the internal pressure of the processing chamber at a second pressure of 1 - 30 Torr; wherein, close the first exhaust port, when the internal pressure of the processing chamber reaches the second pressure, close the second intake port; or, continuously introduce nitrogen or inert gas through the second intake port, open the first exhaust port, and control the opening degree of the first exhaust port to make the internal pressure of the processing chamber reach the second pressure and maintain a dynamic gas flow; When the temperature of the wafer reaches the second temperature and the internal pressure reaches the second pressure, maintain for a second time of 15 to 120 s to perform a degassing process on the same wafer, so that the formic acid, oxygen, and water vapor remaining on the surface of the wafer are completely detached from the surface of the wafer; After that, close the first air inlet and the second air inlet. First, evacuate through the first evacuation port to evacuate the inside of the processing chamber to a seventh pressure below 4 Torr, close the first evacuation port, and then evacuate through the second evacuation port to evacuate the inside of the processing chamber to an eighth pressure below 1 Torr to perform a second exhaust process; Finally, keep the second evacuation port in an open evacuation state so that the inside of the processing chamber is below a ninth pressure of 1 Torr. Open the valve gate, raise the lifting ejector pin, lift the wafer from the support platform, and transfer the wafer out of the processing chamber to complete the entire wafer oxide removal and degassing process.

15. The method for wafer oxide removal and degassing according to claim 13, wherein, The method for removing wafer oxide and degassing includes, in one processing cycle, first performing a degassing process on the wafer, and then performing a metal oxide removal process on the same wafer, specifically including: Transfer the wafer to be processed into the processing chamber through the opened valve gate, place it on the raised lifting ejector pin, and close the valve gate; Open the second air inlet to introduce nitrogen or an inert gas. During this process, lower the lifting ejector pin to place the wafer on the support platform, heat the temperature of the wafer to a second temperature of 150 to 350 °C, and control the internal pressure of the processing chamber at a second pressure of 1 to 30 Torr; wherein, heat the temperature of the wafer to the second temperature by turning on the bottom heater provided on the support platform, or quickly heat the temperature of the wafer to the second temperature by simultaneously turning on the bottom heater provided on the support platform and the top heater provided on the top inside the processing chamber; by closing the first evacuation port, when the internal pressure of the processing chamber reaches the second pressure, close the second air inlet, or, by continuously introducing nitrogen or an inert gas through the second air inlet, open the first evacuation port, and control the opening degree of the first evacuation port to make the internal pressure of the processing chamber reach the second pressure and maintain a dynamic gas flow; When the temperature of the wafer reaches the second temperature and the internal pressure reaches the second pressure, maintain for a second time of 15 to 120 s to perform a degassing process on the wafer, so that the oxygen and water vapor remaining on the surface of the wafer are completely detached from the surface of the wafer, and then open the first evacuation port to evacuate to evacuate the inside of the processing chamber to a tenth pressure below 10 Torr to perform a first exhaust process; After that, heat the wafer temperature to a first temperature of 150 to 350 °C, open the first gas inlet, introduce formic acid gas into the interior of the processing chamber, and control the internal pressure of the processing chamber at a first pressure of 1 to 760 Torr; wherein, by closing the first air extraction port, when the internal pressure of the processing chamber reaches the first pressure, close the first gas inlet, or, open the first gas inlet, continuously introduce formic acid gas, by opening the first air extraction port, and controlling the opening degree of the first air extraction port, so that the internal pressure of the processing chamber reaches the first pressure; When the wafer temperature reaches the first temperature and the internal pressure reaches the first pressure, maintain for a first time of 5 to 120 s, so that during the heating process inside the processing chamber, the formic acid gas starts to react with the metal oxide on the same wafer surface to generate a metal metastable compound, and when the temperature rises to the first temperature, the metal metastable compound decomposes, thereby removing the metal oxide on the wafer surface; After that, close the first gas inlet and the second gas inlet, first evacuate the interior of the processing chamber to a seventh pressure below 4 Torr through the first air extraction port, close the first air extraction port, and then evacuate the interior of the processing chamber to an eighth pressure below 1 Torr through the second air extraction port to perform a second exhaust treatment; Finally, keep the second air extraction port in an open air extraction state, so that the interior of the processing chamber is below a ninth pressure of 1 Torr, open the valve gate, raise the lifting thimble, lift the wafer from the support platform, and transfer the wafer out of the processing chamber to complete the entire wafer oxide removal and degassing treatment process.

Images