Method for testing crystallization rate of microcrystalline silicon of solar cell
By depositing an intrinsic amorphous silicon layer and doped microcrystalline silicon film layer on a single crystal silicon substrate and plating metal nanoparticles, the problems of weak test signals and substrate impact are solved, and a more accurate microcrystalline silicon crystallinity test is achieved.
Patent Information
- Application Number
- CN202410134809.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-01-30
- Publication Date
- 2025-08-01
AI Technical Summary
When testing the crystallization rate of microcrystalline silicon on a single crystal silicon substrate, the Raman spectrometer's signal is weak and inaccurate. The glass substrate affects the growth of the microcrystalline silicon thin film, resulting in the test results that do not represent the actual battery performance.
After depositing the intrinsic amorphous silicon layer and doped microcrystalline silicon film layer on a single crystal silicon substrate, metal nanoparticles are plated to form a metal nanothin film layer, which uses the surface enhancement of the metal nanoparticles to improve signal strength.
The impact of single crystal silicon substrate is reduced, the accuracy of the crystallization rate of microcrystalline silicon is improved, and the test results are more accurately reflected in the actual battery performance.
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Abstract
Description
Technical Field
[0001] This application relates to the field of photovoltaic technology, and particularly to a method for testing the crystallization rate of microcrystalline silicon in a solar cell. Background Art
[0002] The crystallization rate of doped microcrystalline silicon in a solar cell directly affects the cell performance. Therefore, it is necessary to test the crystallization rate of microcrystalline silicon during the process optimization. Currently, a Raman spectrometer is usually used to test the crystallization rate of microcrystalline silicon. During the test, if a microcrystalline silicon film layer is directly deposited on a single-crystalline silicon substrate for testing, since the microcrystalline silicon film layer is very thin, with a thickness of only 5 nm to 40 nm, the laser will penetrate the microcrystalline silicon thin film during the Raman spectrometer test to obtain a strong signal of the substrate silicon, resulting in a weak Raman signal of the surface microcrystalline silicon, large data analysis errors, and inaccurate test results. If a microcrystalline silicon film layer is deposited on glass for testing, because the Raman peak positions of glass and microcrystalline silicon are quite different, there is no substrate signal interference. However, the substrate material will affect the growth of the microcrystalline silicon thin film, and there will be differences in the structures of the microcrystalline silicon film layers grown and deposited on glass and on silicon wafers. The crystallization rate of microcrystalline silicon tested by this method does not fully represent the performance of microcrystalline silicon in an actual cell. Summary of the Invention
[0003] Based on this, it is necessary to provide a method for testing the crystallization rate of microcrystalline silicon in a solar cell. The method for testing the crystallization rate of microcrystalline silicon in a solar cell according to the present invention coats a metal nanoparticle structure on the surface of a sample, and uses the surface-enhanced Raman effect of the metal nanoparticles to improve the Raman signal of the surface microcrystalline silicon, so as to more accurately analyze the crystallization rate of the surface microcrystalline silicon.
[0004] An embodiment of the present application provides a method for testing the crystallization rate of microcrystalline silicon in a solar cell.
[0005] A method for testing the crystallization rate of microcrystalline silicon in a solar cell includes the following steps:
[0006] Sequentially deposit an intrinsic amorphous silicon layer and a doped microcrystalline silicon film layer on a single-crystalline silicon substrate;
[0007] Deposit metal nanoparticles on the doped microcrystalline silicon film layer to form a metal nanometer thin film layer; and
[0008] Test the crystallization rate of the doped microcrystalline silicon film layer.
[0009] In some embodiments, the metal nanoparticles include one or more of Au, Ag, and Cu.
[0010] In some embodiments, when depositing metal nanoparticles on the doped microcrystalline silicon film layer, the deposition time is 10 s to 100 s.
[0011] In some of these embodiments, the coverage rate of the metal nano-thin film layer covering the doped microcrystalline silicon film layer is greater than 50%.
[0012] In some of these embodiments, the particle size of the metal nanoparticles in the metal nano-thin film layer is 2 nm to 10 nm.
[0013] In some of these embodiments, the thickness of the metal nano-thin film layer is 2 nm to 25 nm.
[0014] In some of these embodiments, the thickness of the single-crystalline silicon substrate is 90 μm to 150 μm.
[0015] In some of these embodiments, the thickness of the intrinsic amorphous silicon layer is 3 nm to 8 nm.
[0016] In some of these embodiments, the thickness of the doped microcrystalline silicon film layer is 5 nm to 40 nm.
[0017] In some of these embodiments, when performing the crystallization rate test on the doped microcrystalline silicon film layer, a Raman spectrometer is used for the test.
[0018] In the above method for testing the crystallization rate of microcrystalline silicon in a solar cell, the film is coated and tested on a single-crystalline silicon substrate, which solves the influence of different substrates on film growth. By depositing a metal nanoparticle structure on the sample surface and utilizing the surface-enhanced Raman effect of the metal nanoparticles, the Raman signal of the microcrystalline silicon in the doped microcrystalline silicon film layer is enhanced, the influence of the single-crystalline silicon substrate is reduced, and the crystallization rate of the surface microcrystalline silicon can be analyzed more accurately, improving the test accuracy. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of the present application, and those skilled in the art can obtain other drawings based on these drawings without creative efforts.
[0020] In order to more fully understand the present application and its beneficial effects, the following will be described in conjunction with the drawings. Among them, the same reference numerals in the following description represent the same parts.
[0021] Figure 1 It is a flowchart of the method for testing the crystallization rate of microcrystalline silicon in a solar cell according to an embodiment of the present invention;
[0022] Figure 2 It is a schematic diagram when depositing metal nanoparticles on the doped microcrystalline silicon film layer for 10 s in Embodiment 1 of the present invention;
[0023] Figure 3Schematic cross-sectional view when depositing metal nanoparticles on the doped microcrystalline silicon film layer of Embodiment 1 of the present invention for 10 s;
[0024] Figure 4 Schematic diagram when depositing metal nanoparticles on the doped microcrystalline silicon film layer of Embodiment 1 of the present invention for 100 s;
[0025] Figures 5(a) to 5(c) are schematic diagrams of the Raman spectrum test results obtained by using a Raman spectrometer in Embodiment 1;
[0026] Figures 6(a) to 6(j) are schematic diagrams of the intensity normalization process of the Raman spectrum test obtained by using a Raman spectrometer in Embodiment 1. Detailed implementation manners
[0027] To make the above objects, features, and advantages of the present invention more obvious and understandable, the following describes the detailed implementation manners of the present invention with reference to the accompanying drawings. Many specific details are set forth in the following description to fully understand the present invention. However, the present invention can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without departing from the connotation of the present invention. Therefore, the present invention is not limited by the specific embodiments disclosed below.
[0028] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation of the present invention.
[0029] In the present invention, unless otherwise clearly defined and limited, the terms "mounted", "connected", "connected to", "fixed", etc. should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or integrated; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the internal communication of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0030] In the present invention, unless otherwise clearly specified or limited, the first feature being "on" or "under" the second feature may be that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, the first feature being "above", "over" and "on top of" the second feature may be that the first feature is directly above or obliquely above the second feature, or merely indicates that the first feature has a higher horizontal height than the second feature. The first feature being "under", "below" and "beneath" the second feature may be that the first feature is directly below or obliquely below the second feature, or merely indicates that the first feature has a lower horizontal height than the second feature.
[0031] In the description of the present invention, the meaning of "several" is more than one, the meaning of "multiple" is more than two, and understandings such as "greater than", "less than", "exceeding", etc. do not include the corresponding number, while understandings such as "above", "below", "within", etc. include the corresponding number. If there is a description of "first" and "second", it is only for the purpose of distinguishing technical features, and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of the indicated technical features or implicitly indicating the sequence relationship of the indicated technical features.
[0032] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those of ordinary skill in the technical field to which the present invention belongs. The terms used in the description of the present invention herein are only for the purpose of describing specific embodiments, and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.
[0033] The embodiments of the present application provide a method for testing the crystallization rate of microcrystalline silicon in a solar cell, so as to solve the problems in the traditional technology that when depositing a microcrystalline silicon film layer on a single-crystalline silicon substrate for testing, the surface microcrystalline silicon Raman signal is weak, the data analysis error is large, and the test result is inaccurate; and when depositing a microcrystalline silicon film layer on glass for testing, the substrate material will affect the growth of the microcrystalline silicon thin film, and there will be differences in the microcrystalline silicon film layer structures grown and deposited on glass and on a silicon wafer, and the tested crystallization rate of microcrystalline silicon cannot fully represent the performance of microcrystalline silicon in an actual battery. The method for testing the crystallization rate of microcrystalline silicon in a solar cell will be described below with reference to the accompanying drawings.
[0034] The method for testing the crystallization rate of microcrystalline silicon in a solar cell provided by the embodiments of the present application, for example, please refer to Figure 1 as shown Figure 1 is a flowchart of the method for testing the crystallization rate of microcrystalline silicon in a solar cell provided by the embodiments of the present application. The method for testing the crystallization rate of microcrystalline silicon in a solar cell of the present application can be used for testing the crystallization rate of microcrystalline silicon in a solar cell.
[0035] In order to more clearly illustrate the structure of the method for testing the crystallization rate of microcrystalline silicon in a solar cell, the method for testing the crystallization rate of microcrystalline silicon in a solar cell will be introduced below with reference to the accompanying drawings.
[0036] Exemplarily, refer to Figure 1 as shown, a method for testing the crystallization rate of microcrystalline silicon in a solar cell, comprising the following steps:
[0037] Deposit an intrinsic amorphous silicon layer and a doped microcrystalline silicon film layer sequentially on a single crystal silicon substrate.
[0038] Deposit metal nanoparticles on the doped microcrystalline silicon film layer to form a metal nano-thin film layer. And
[0039] Test the crystallization rate of the doped microcrystalline silicon film layer.
[0040] The above method for testing the crystallization rate of microcrystalline silicon in a solar cell deposits an intrinsic amorphous silicon layer and a doped microcrystalline silicon film layer sequentially, and then deposits metal nanoparticles on the doped microcrystalline silicon film layer to form a metal nano-thin film layer, solving the problem of inaccurate testing caused by the influence of different substrates on film growth in traditional technologies. By plating a metal nanoparticle structure on the sample surface and utilizing the surface-enhanced Raman effect of metal nanoparticles, the Raman signal of the microcrystalline silicon in the doped microcrystalline silicon film layer is enhanced, the influence of the single crystal silicon substrate is reduced, and the crystallization rate of the surface microcrystalline silicon can be analyzed more accurately, improving the testing accuracy.
[0041] In some embodiments, the metal nanoparticles include one or more of Au, Ag, and Cu.
[0042] In some embodiments, when depositing metal nanoparticles on the doped microcrystalline silicon film layer, the deposition time is 10 s to 100 s. For example, in one specific instance, the deposition time when depositing metal nanoparticles on the doped microcrystalline silicon film layer is 10 s; in another specific instance, the deposition time when depositing metal nanoparticles on the doped microcrystalline silicon film layer is 100 s; it is not difficult to understand that in other specific instances, the deposition time when depositing metal nanoparticles on the doped microcrystalline silicon film layer can also be 20 s, 30 s, 40 s, 50 s, 60 s, 70 s, 80 s, 90 s or other values.
[0043] In some embodiments, the coverage rate of the metal nano-thin film layer covering the doped microcrystalline silicon film layer is greater than 50%. If the coverage area of the metal nano-thin film layer covering the doped microcrystalline silicon film layer is too small, the proportion of the surface microcrystalline silicon in contact with the metal is small, and the proportion of the microcrystalline silicon obtaining the surface-enhanced Raman effect is small, and the signal of the substrate crystalline silicon is still strong.
[0044] In some of these embodiments, the particle size of the metal nanoparticles in the metal nano-thin film layer is 2 nm to 10 nm. For example, in one specific instance, the particle size of the metal nanoparticles in the metal nano-thin film layer is 2 nm; in another specific instance, the particle size of the metal nanoparticles in the metal nano-thin film layer is 10 nm; it is not difficult to understand that in other specific instances, the particle size of the metal nanoparticles in the metal nano-thin film layer can also be 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm or other values.
[0045] In some of these embodiments, the thickness of the metal nano-thin film layer is 2 nm to 25 nm. For example, in one specific instance, the thickness of the metal nano-thin film layer is 2 nm; in another specific instance, the thickness of the metal nano-thin film layer is 25 nm; it is not difficult to understand that in other specific instances, the thickness of the metal nano-thin film layer can also be 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, 13 nm, 15 nm, 16 nm, 17 nm, 18 nm, 19 nm, 20 nm, 23 nm, 24 nm or other values. If the metal nano-thin film layer is too thick, due to the interaction between the metal and the laser, the laser energy reaching the sample to be measured under the metal will be reduced, and the overall Raman signal of the sample to be measured will be reduced.
[0046] In some of these embodiments, the thickness of the single-crystalline silicon substrate is 90 μm to 150 μm. For example, in one specific instance, the thickness of the single-crystalline silicon substrate is 90 μm; in another specific instance, the thickness of the single-crystalline silicon substrate is 150 μm; it is not difficult to understand that in other specific instances, the thickness of the single-crystalline silicon substrate can also be 100 μm, 110 μm, 120 μm, 130 μm, 140 μm or other values.
[0047] In some of these embodiments, the thickness of the intrinsic amorphous silicon layer is 3 nm to 8 nm. For example, in one specific instance, the thickness of the metal intrinsic amorphous silicon layer is 3 nm; in another specific instance, the thickness of the intrinsic amorphous silicon layer is 8 nm; it is not difficult to understand that in other specific instances, the thickness of the intrinsic amorphous silicon layer can also be 34 nm, 5 nm, 6 nm, 7 nm or other values.
[0048] In some of these embodiments, the thickness of the doped microcrystalline silicon film layer is 5 nm to 40 nm. For example, in one specific instance, the thickness of the doped microcrystalline silicon film layer is 5 nm; in another specific instance, the thickness of the doped microcrystalline silicon film layer is 40 nm; it is not difficult to understand that in other specific instances, in one specific instance, the thickness of the doped microcrystalline silicon film layer can also be 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, 13 nm, 15 nm, 16 nm, 17 nm, 18 nm, 19 nm, 20 nm, 23 nm, 24 nm, 25 nm, 28 nm, 30 nm, 33 nm, 35 nm, 36 nm, 38 nm, 39 nm or other values. For example, in one specific embodiment, the thickness of the doped microcrystalline silicon film layer is about 30 nm and the crystallization rate is about 25%.
[0049] In some of these embodiments, when testing the crystallization rate of the doped microcrystalline silicon film layer, a Raman spectrometer is used for testing.
[0050] Among them, the technical principle of the Raman spectrometer test is as follows: When a monochromatic light beam with a frequency of v0 irradiates the sample, the molecule can cause the incident light to scatter. Most of the light only changes the propagation direction of the light and thus scatters, while the frequency of the transmitted light passing through the molecule is still the same as that of the incident light. At this time, this kind of scattering is called Rayleigh scattering. There is also another kind of scattered light. This scattered light not only changes the propagation direction but also changes its frequency, so it is different from the frequency of the incident light. Therefore, this scattered light is called Raman scattering. In Raman scattering, when the frequency of the scattered light is reduced relative to the frequency of the incident light, it is called Stokes scattering. Therefore, in the opposite case, the scattering with an increased frequency is called anti-Stokes scattering. Stokes scattering is usually much stronger than anti-Stokes scattering. Raman spectrometers usually measure mostly Stokes scattering, which is also collectively called Raman scattering. The frequency difference v between the scattered light and the incident light is called the Raman shift. The Raman shift is independent of the frequency of the incident light and only related to the structure of the scattering molecule itself. Raman scattering is caused by the change of the molecular polarizability. The Raman shift depends on the change of the molecular vibration energy level. Different chemical bonds or groups have characteristic molecular vibrations. ΔE reflects the change of the specified energy level. Therefore, the corresponding Raman shift is also characteristic.
[0051] In some of these embodiments, coating processes such as magnetron sputtering or electron beam evaporation are used to deposit the above-mentioned metal nanoparticles.
[0052] Example 1
[0053] This embodiment provides a method for testing the crystallization rate of microcrystalline silicon in a solar cell.
[0054] A method for testing the crystallization rate of microcrystalline silicon in a solar cell includes the following steps:
[0055] (1) An intrinsic amorphous silicon layer and a doped microcrystalline silicon film layer are sequentially deposited on a single-crystalline silicon substrate. The thickness of the intrinsic amorphous silicon layer is 3 nm to 8 nm. The thickness of the single-crystalline silicon substrate is 90 μm to 150 μm. The thickness of the doped microcrystalline silicon film layer is 5 nm to 40 nm.
[0056] (2) Metal nanoparticles Au are deposited on the doped microcrystalline silicon film layer by magnetron sputtering. The particle size of the metal nanoparticles is 2 nm to 8 nm, and the deposition times are 10 s, 20 s, 30 s, 40 s, 50 s, 60 s, 70 s, 80 s, 90 s, and 100 s respectively. See Figures 2 - 3 as shown in Figure 2 which is a schematic diagram of Example 1 of the present invention when depositing metal nanoparticles on the doped microcrystalline silicon film layer for 10 s. Figure 3 which is a cross-sectional schematic diagram of Example 1 of the present invention when depositing metal nanoparticles on the doped microcrystalline silicon film layer for 10 s. At a deposition time of 10 s, the Au nanoparticles are dispersed on the surface, with a size of 2 - 8 nm and a surface coverage area of about 50%. As the deposition time increases, the surface Au particle coverage area increases, gradually forming an Au film, and the thickness of the Au film gradually increases. At a deposition time of 100 s, the thickness of the surface Au film is about 20 - 25 nm. See Figure 4 as shown in Figure 4 which is a schematic diagram of Example 1 of the present invention when depositing metal nanoparticles on the doped microcrystalline silicon film layer for 100 s. After deposition, a metal nano-thin film layer is formed. The thickness of the metal nano-thin film layer is 2 nm to 25 nm, and the coverage rate of the metal nano-thin film layer covering the doped microcrystalline silicon film layer is about 50%. A Raman spectrometer is used to test the crystallization rate of the doped microcrystalline silicon film layer.
[0057] (3)The samples in step (2) are respectively subjected to Raman spectroscopy tests using a Raman spectrometer. The test results are shown in Figures 5(a) - 5(c) and Figures 6(a) - 6(j). Figures 5(a) - 5(c) are schematic diagrams of the Raman spectroscopy test results of Example 1 using a Raman spectrometer. The times 0s, 10s, 20s, 30s, 40s, 50s, 60s, 70s, 80s, 90s, and 100s in Figures 5(a) - 5(c) respectively represent the deposition times of metal nanoparticles. Figures 6(a) - 6(j) are schematic diagrams of the intensity normalization processing of the Raman spectroscopy test of Example 1 using a Raman spectrometer. The times 0s, 10s, 20s, 30s, 40s, 50s, 60s, 70s, 80s, 90s, and 100s in Figures 6(a) - 6(j) respectively represent the deposition times of metal nanoparticles. Among them, in Figures 5(a) - 5(c), the abscissa is the Raman shift and the ordinate is the intensity. In Figures 6(a) - 6(j), the abscissa is the Raman shift and the ordinate is the normalization parameter.
[0058] The Raman peak position of crystalline silicon is at 510 cm -1 and 520 cm -1 , and the Raman peak position of amorphous silicon is at 480 cm -1 . As shown in Figures 6(a) - 6(j), for the sample without Au plating on the surface (0s), there is a strong signal of the substrate crystalline silicon at the position of 520 cm -1 , and the signal of amorphous silicon at the position of 480 cm -1 is very weak. After Au plating on the surface, the signal of amorphous silicon at the position of 480 cm -1 is significantly enhanced, and the surface-enhanced Raman effect of Au is obvious. As shown in Figures 5(a) - 5(c), with the increase of the Au plating time, the thickness of the metal nanofilmlayer increases. Due to the interaction between the metal and the laser, the laser energy reaching the sample under the metal decreases, and the overall Raman signal decreases. At the deposition time of 100s, the overall Raman signal is very weak.
[0059] According to the above Raman spectra, the crystallization rate of microcrystalline silicon in the doped microcrystalline silicon film layer is calculated respectively. The calculation of the microcrystalline silicon crystallization rate is the sum of the crystalline silicon peak areas divided by the sum of all peak areas: c = (S510 + S520) / (S480 + S510 + S520). The calculation results are shown in Table 1.
[0060] Table 1
[0061]
[0062] As can be seen from the results in Table 1, sample No. 1 is the sample without Au plating (0 s). Due to the detection of a strong signal from the substrate crystalline silicon, the calculated crystallization rate is significantly higher, far greater than the actual crystallization rate of the surface microcrystalline silicon (about 25% or so). Sample No. 2 is the sample with a Au plating time of 10 s. The surface Raman enhancement effect enhances the signal of the microcrystalline silicon. However, the Au particles are dispersed on the sample surface and do not completely cover the sample. The proportion of the surface microcrystalline silicon in contact with the metal is limited, and the proportion of the microcrystalline silicon obtaining the surface-enhanced Raman effect is limited. The signal of the substrate crystalline silicon is still slightly stronger, and the calculated crystallization rate of 39% is still on the high side. However, the calculated result of the crystallization rate is significantly lower than that of the sample without gold plating. As the Au plating time increases, when the deposition time is 50 s to 100 s, the measured results of the crystallization rate of samples No. 6 to No. 11 are stable at 24% - 26%, which is consistent with the actual crystallization rate of the samples.
[0063] In actual operation, the applicant of this application has conducted a large number of experiments. For example, directly depositing a microcrystalline silicon film layer on glass for testing, the substrate material will affect the growth of the microcrystalline silicon thin film. There will be differences in the structure of the microcrystalline silicon film layer grown and deposited on glass and on a silicon wafer, resulting in inconsistent test results. Further, the applicant has tried to directly deposit an intrinsic amorphous silicon layer and a doped microcrystalline silicon film layer on a single-crystalline silicon substrate, and there are also problems with inconsistent test results. After directly depositing an intrinsic amorphous silicon layer and a doped microcrystalline silicon film layer on a single-crystalline silicon substrate and directly testing the crystallization rate, the signal of the amorphous silicon is weak, the overall Raman signal is weak, and after multiple experiments, there is a situation of unstable signal. Based on this, the applicant creatively deposits a metal nano-film layer on the microcrystalline silicon film layer, and by controlling the deposition time and the thickness of the metal nano-film layer, controls the laser energy reaching the sample under the metal, so as to achieve the purpose of stable Raman signal.
[0064] In summary, for the method for testing the crystallization rate of microcrystalline silicon in the solar cell of the present invention, when coating and testing on a single-crystalline silicon substrate, by sequentially depositing an intrinsic amorphous silicon layer and a doped microcrystalline silicon film layer, and then depositing metal nanoparticles on the doped microcrystalline silicon film layer to form a metal nano-film layer, it solves the problem in the traditional technology that inaccurate testing is caused by the influence of different substrates on the film growth. By coating a metal nano-particle structure on the sample surface and using the surface-enhanced Raman effect of the metal nanoparticles, the Raman signal of the microcrystalline silicon in the doped microcrystalline silicon film layer is enhanced, the influence of the single-crystalline silicon substrate is reduced, and the crystallization rate of the surface microcrystalline silicon can be analyzed more accurately, improving the testing accuracy.
[0065] In the above embodiments, the descriptions of each embodiment have their own emphases. For the parts not detailed in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.
[0066] The technical features of the above-described embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as the scope described in this specification.
[0067] The above-described embodiments only represent several implementation manners of the present invention, and the description thereof is relatively specific and detailed. However, it should not be construed as a limitation of the scope of the patent for the present invention. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present invention, several variations and improvements can be made, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent for the present invention shall be subject to the appended claims.
Claims
1. A method for testing the crystallization rate of microcrystalline silicon in a solar cell, characterized in that, It includes the following steps: Deposit an intrinsic amorphous silicon layer and a doped microcrystalline silicon film layer in sequence on a single-crystalline silicon substrate; Deposit metal nanoparticles on the doped microcrystalline silicon film layer to form a metal nano-thin film layer; and Perform a crystallization rate test on the doped microcrystalline silicon film layer.
2. The method for testing the crystallization rate of microcrystalline silicon in a solar cell according to claim 1, wherein The metal nanoparticles include one or more of Au, Ag, and Cu.
3. The method for testing the crystallization rate of microcrystalline silicon in a solar cell according to claim 1, characterized in that, When depositing the metal nanoparticles on the doped microcrystalline silicon film layer, the deposition time is 10 s to 100 s.
4. The method for testing the crystallization rate of microcrystalline silicon in a solar cell according to claim 1, characterized in that, The coverage rate of the metal nano-thin film layer covering the doped microcrystalline silicon film layer is greater than 50%.
5. The method for testing the crystallization rate of microcrystalline silicon in a solar cell according to any one of claims 1 to 4, characterized in that, The particle size of the metal nanoparticles in the metal nano-thin film layer is 2 nm to 10 nm.
6. The method for testing the crystallization rate of microcrystalline silicon in a solar cell according to any one of claims 1 to 4, characterized in that, The thickness of the metal nano-thin film layer is 2 nm to 25 nm.
7. The method for testing the crystallization rate of microcrystalline silicon in a solar cell according to any one of claims 1 to 4, characterized in that, The thickness of the single-crystalline silicon substrate is 90 μm to 150 μm.
8. The method for testing the crystallization rate of microcrystalline silicon in a solar cell according to any one of claims 1 to 4, characterized in that, The thickness of the intrinsic amorphous silicon layer is 3 nm to 8 nm.
9. The method for testing the crystallization rate of microcrystalline silicon in a solar cell according to any one of claims 1 to 4, characterized in that, The thickness of the doped microcrystalline silicon film layer is 5 nm to 40 nm.
10. The method for testing the crystallization rate of microcrystalline silicon in a solar cell according to any one of claims 1 to 4, characterized in that, When performing the crystallization rate test on the doped microcrystalline silicon film layer, a Raman spectrometer is used for the test.