Detection device and single-wafer rod detection method

Abstract

The invention provides a detection device and a single-wafer rod detection method. The detection device comprises a detection probe which is provided with a detection surface, and the detection surface is provided with a sensor center; and the number of the detection probes is at least four, the detection probes are telescopically arranged on the detection surface, and the extension direction of the detection probes and the telescopic direction of the detection probes are perpendicular to the detection surface. According to the invention, the problem of poor single-wafer rod detection effect in the prior art is solved.

Description

Technical Field

[0001] The present invention relates to the technical field of single-wafer rod detection, and more particularly, to a detection device and a single-wafer rod detection method. Background Art

[0002] In the field of semiconductor manufacturing, the quality inspection of single-crystal silicon wafers is crucial, directly affecting the performance and reliability of the final products. Traditional detection methods mainly rely on the BCT-400 minority carrier lifetime tester of Sinton Company in the United States. It is a high-precision testing device widely used in the semiconductor industry for measuring the minority carrier lifetime and resistivity of single-crystal silicon wafers. However, during the use of this tester, especially when detecting the edge resistivity, there are certain technical challenges and limitations.

[0003] Currently, when performing edge resistivity measurement, the tester needs to manually estimate and adjust the position of the probe to a specific distance from the edge (for example, 35 millimeters). This process is not only time-consuming but also easily affected by human factors. Specifically, due to the significant differences in minority carrier lifetime and resistivity in different regions of the single-crystal silicon wafer, these parameters in the edge region are usually higher than those in the central region. Therefore, accurate positioning is crucial for obtaining reliable detection results. However, due to the lack of effective auxiliary positioning tools, manual positioning is not only inefficient but also may introduce position deviations, thereby affecting the accuracy and consistency of the detection data. This method relying on manual estimation is difficult to ensure that the position of each measurement is exactly the same in actual operation. Especially in a mass production environment, frequent manual adjustment not only increases the workload of the operator but also reduces the overall efficiency of the detection.

[0004] In addition, the measurement errors caused by human operation, especially the measurement errors of edge resistivity, directly affect the evaluation of product quality and the optimization of process parameters. In the semiconductor industry, tiny resistivity changes may have a significant impact on device performance. Therefore, reducing the uncertainty in the measurement process and improving the accuracy and stability of detection are the key to enhancing the manufacturing level of semiconductor materials.

[0005] Therefore, there is a problem of poor detection effect of single-wafer rods in the prior art. Summary of the Invention

[0006] The main object of the present invention is to provide a detection device and a single-wafer rod detection method to solve the problem of poor detection effect of single-wafer rods in the prior art.

[0007] To achieve the above object, according to one aspect of the present invention, a detection device is provided, including: a detection probe, the detection probe has a detection surface, and the detection surface has a sensor center; detection probes, there are at least four detection probes, the detection probes are telescopically arranged on the detection surface, and the extending direction and the telescopic direction of the detection probes are both perpendicular to the detection surface.

[0008] Further, the distances from the four detection probes to the sensor center are equal.

[0009] Further, the four detection probes are respectively a first probe, a second probe, a third probe and a fourth probe, and the connection line between the first probe and the second probe is parallel to the connection line between the third probe and the fourth probe; and / or the connection line between the first probe and the third probe is parallel to the connection line between the second probe and the fourth probe.

[0010] Further, the distances between the four detection probes and the center line of the sensor center are equal, and are greater than or equal to 30 mm and less than or equal to 40 mm.

[0011] Further, the distance between the four detection probes and the center line of the sensor center is 35 mm.

[0012] Further, the detection device further includes at least four reset members, the number of the reset members is equal to that of the detection probes and they are in one-to-one correspondence, at least a part of the reset members is located inside the detection probe, one end of the reset member abuts against the detection probe, and the other end of the reset member abuts against the corresponding detection probe.

[0013] Further, the detection probe has a retracted position and an extended position. When the detection probe is in the retracted position, the detection probe is located inside the detection probe.

[0014] Further, when the detection probe is in the retracted position, the extended end of the detection probe is flush with the detection surface.

[0015] According to another aspect of the present invention, a method for detecting a single wafer bar is provided. The above detection device is used to detect the center of the end face of the single wafer bar. During the detection process, the four detection probes of the detection device respectively abut against the end face of the single wafer bar; press the detection device to make the detection probes contract until the detection surface of the detection probe of the detection device fits the end face of the single wafer bar.

[0016] According to another aspect of the present invention, a method for detecting a single-wafer rod is provided. The edge of the single-wafer rod is detected using the above-described detection device. During the detection process, any two adjacent detection probes among the four detection probes of the detection device are in contact with the end face of the single-wafer rod, and the other two detection probes are in contact with the peripheral edge of the single-wafer rod; the detection device is pressed to cause the detection probes in contact with the end face of the single-wafer rod to contract until the detection surface of the detection probe of the detection device fits the end face of the single-wafer rod.

[0017] Applying the technical solution of the present invention, the detection device in the present application includes a detection probe and a detection head. The detection head has a detection surface, and the detection surface has a sensor center; there are at least four detection probes, and the detection probes are telescopically arranged on the detection surface, and the extending direction and the telescopic direction of the detection probes are both perpendicular to the detection surface.

[0018] When using the detection device in the present application to detect a single-wafer rod, since the detection head of the detection device has a detection surface and the detection surface has a sensor, when the detection surface fits the end face of the single-wafer rod, the end face of the single-wafer rod can be detected through the sensor. When it is necessary to detect the edge of the end face of the single-wafer rod, two adjacent detection probes among the four detection probes can be in contact with the circumferential side wall of the single-wafer rod or the peripheral edge of the end face of the single-wafer rod, and the other two detection probes are in contact with the end face of the single-wafer rod, and the detection device is pressed to cause the two detection probes in contact with the end face of the single-wafer rod to contract until the detection surface fits the end face of the single-wafer rod, so as to be able to detect the end face of the single-wafer rod through the sensor of the detection head. Therefore, by making two adjacent detection probes among the four detection probes in contact with the circumferential side wall of the single-wafer rod or the peripheral edge of the end face of the single-wafer rod, the distance between the sensor center of the detection head and the peripheral edge of the end face of the single-wafer rod can be defined. And when using this method to repeat the detection at different positions multiple times, the connection line of the detection points corresponding to the sensor center at different positions can be circular or the distances from multiple detection points to the peripheral edge of the end face of the single-wafer rod are the same, thereby ensuring the accuracy of the detection of the single-wafer rod by the detection device and improving the detection efficiency of the single-wafer rod. Therefore, the detection device in the present application effectively solves the problem of poor detection effect of a single-wafer rod in the prior art. Description of the Drawings

[0019] The specification drawings forming a part of the present application are used to provide a further understanding of the present invention. The schematic embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0020] Figure 1 The structural schematic diagram of the detection device of a specific embodiment of the present application is shown;

[0021] Figure 2 The schematic diagram of the positional relationship between the detection probe and the detection probe head of the detection device according to a specific embodiment of the present application is shown.

[0022] Among them, the above-mentioned drawings include the following reference numerals:

[0023] 10. Detection probe head; 11. Detection surface; 12. Sensor center; 13. Center line; 20. Detection probe; 21. First probe; 22. Second probe; 23. Third probe; 24. Fourth probe. Specific embodiments

[0024] It should be noted that, without conflict, the embodiments in the present application and the features in the embodiments can be combined with each other. The present invention will be described in detail below with reference to the drawings and in combination with the embodiments.

[0025] It should be pointed out that unless otherwise specified, all technical and scientific terms used in the present application have the same meaning as commonly understood by those of ordinary skill in the technical field to which the present application belongs.

[0026] In the present invention, unless otherwise stated, the orientation words such as "upper, lower, top, bottom" are usually in the direction shown in the drawings, or in the vertical, perpendicular or gravitational direction of the component itself; similarly, for the convenience of understanding and description, "inner, outer" refer to the inner and outer of the contour of each component itself, but the above orientation words are not used to limit the present invention.

[0027] In order to solve the problem of poor detection effect of a single wafer rod in the prior art, the present application provides a detection device and a single wafer rod detection method.

[0028] As Figure 1 and Figure 2 shown, the detection device in the present application includes a detection probe head 10 and a detection probe 20. The detection probe head 10 has a detection surface 11, and the detection surface 11 has a sensor center 12; the detection probe 20 is at least four, and the detection probe 20 is telescopically arranged on the detection surface 11, and the extending direction and the telescopic direction of the detection probe 20 are both perpendicular to the detection surface 11.

[0029] When using the detection device in this application to detect a single wafer rod, since the detection probe 10 of the detection device has a detection surface 11 and the detection surface 11 has sensors, when the detection surface 11 is in contact with the end face of the single wafer rod, the end face of the single wafer rod can be detected through the sensors. When it is necessary to detect the edge of the end face of the single wafer rod, two adjacent detection probes 20 among the four detection probes 20 can be made to abut against the circumferential side wall of the single wafer rod or the periphery of the end face of the single wafer rod, and the other two detection probes 20 are in contact with the end face of the single wafer rod, and the detection device is pressed to make the two detection probes 20 in contact with the end face of the single wafer rod contract until the detection surface 11 is in contact with the end face of the single wafer rod, so as to be able to detect the end face of the single wafer rod through the sensors of the detection probe 10. Therefore, by making two adjacent detection probes 20 among the four detection probes 20 abut against the circumferential side wall of the single wafer rod or the periphery of the end face of the single wafer rod, the distance between the sensor center 12 of the detection probe 10 and the periphery of the end face of the single wafer rod can be defined. Moreover, when using this method to repeatedly detect at different positions multiple times, the connection line of the detection points corresponding to the sensor center 12 at different positions can be circular or the distances from multiple detection points to the periphery of the end face of the single wafer rod are the same, thus ensuring the accuracy of the detection of the single wafer rod by the detection device and improving the detection efficiency of the single wafer rod. Therefore, the detection device in this application effectively solves the problem of poor detection effect of single wafer rods in the prior art.

[0030] It should be noted that the detection probe 10 of this application can be the detection probe 10 of a BCT-400 minority carrier lifetime tester, and holes can be dug or other operations can be performed on the detection surface 11 of the probe to realize the installation of the detection probe 20.

[0031] It should be noted that the detection of the edge of the end face of the single wafer rod using the detection device above can be understood as detecting at a certain distance from the periphery of the end face of the single wafer rod. On the other hand, when using the detection device in this application to detect the end face of the single wafer rod, by making two adjacent detection probes 20 abut against the circumferential side wall of the single wafer rod, the distance between the sensor center 12 of the detection probe 10 and the periphery of the end face of the single wafer rod when the detection surface 11 is in contact with the end face of the single wafer rod is defined, thus solving the problem that in the prior art, when measuring the edge resistivity, the detection personnel need to manually estimate and adjust the position of the probe to a specific distance from the edge.

[0032] Optionally, the distances from the four detection probes 20 to the sensor center 12 are equal.

[0033] In a specific embodiment of the present application, the four detection probes 20 are respectively a first probe 21, a second probe 22, a third probe 23, and a fourth probe 24. The connection line between the first probe 21 and the second probe 22 is parallel to the connection line between the third probe 23 and the fourth probe 24; the connection line between the first probe 21 and the third probe 23 is parallel to the connection line between the second probe 22 and the fourth probe 24. Moreover, when using the detection device to detect the end face of a single wafer rod, the first probe 21 and the third probe 23 can be first brought into contact with the circumferential side wall of the single wafer rod. Then, during the second detection, the second probe 22 and the fourth probe 24 can be brought into contact with the circumferential side wall of the single wafer rod.

[0034] Optionally, the distances between the four detection probes 20 and the center line 13 of the sensor center 12 are equal, and are greater than or equal to 30 mm and less than or equal to 40 mm.

[0035] Preferably, the distances between the four detection probes 20 and the center line 13 of the sensor center 12 are 35 mm.

[0036] Of course, according to actual usage requirements, the distances from the four detection probes 20 to the center line 13 of the sensor detection center can be adaptively adjusted.

[0037] Optionally, the detection device further includes at least four reset members, the number of reset members is equal to and corresponds to the number of detection probes 20 one by one. At least a part of the reset member is located inside the detection probe 10, and one end of the reset member abuts against the detection probe 10, and the other end of the reset member abuts against the corresponding detection probe 20. By setting like this, after the detection device finishes the detection, the detection probe 20 can return to the position before being pressed under the action of the reset member.

[0038] Optionally, the detection probe 20 has a retracted position and an extended position. When the detection probe 20 is in the retracted position, the detection probe 20 is located inside the detection probe 10. Further optionally, when the detection probe 20 is in the retracted position, the extended end of the detection probe 20 is flush with the detection surface 11. By setting like this, the fitting effect between the detection surface 11 and the end face of the single wafer rod during the detection process can be effectively ensured.

[0039] According to another aspect of the present invention, a method for detecting a single wafer rod is provided. The above detection device is used to detect the center of the end face of the single wafer rod. During the detection process, the four detection probes 20 of the detection device are respectively brought into contact with the end face of the single wafer rod; the detection device is pressed to make the detection probe 20 contract until the detection surface 11 of the detection probe 10 of the detection device fits with the end face of the single wafer rod. Moreover, before the detection, the sensor center 12 of the detection probe 10 can be first aligned with the center of the circle of the end face of the single wafer rod.

[0040] Of course, in the present application, one of the detection probes 20 can also be aligned with the center of the end face of the single wafer rod. At this time, the distance between the sensor center 12 of the detection probe 10 and the center of the end face of the single wafer rod is defined by this detection probe 20. Thus, this method can be used for multiple detections at different positions, and the distances from multiple different detection positions to the center of the end face of the single wafer rod are the same.

[0041] Moreover, in the present application, according to the size of the single wafer rod, the distances from the first probe 21, the second probe 22, the third probe 23, and the fourth probe 24 to the sensor center 12 can be adjusted. Thus, when detecting the center of the single wafer rod, the first probe 21, the second probe 22, the third probe 23, and the fourth probe 24 can be made to abut against the circumferential line of the end face of the single wafer rod respectively first. At this time, the detection center of the sensor corresponds to the center of the end face of the single wafer rod.

[0042] According to another aspect of the present invention, a method for detecting a single wafer rod is provided. The edge of the single wafer rod is detected using the above detection device. During the detection process, any two adjacent detection probes 20 among the four detection probes 20 of the detection device abut against the end face of the single wafer rod, and the other two detection probes 20 abut against the periphery of the single wafer rod; the detection device is pressed to make the detection probes 20 abutting against the end face of the single wafer rod contract until the detection surface 11 of the detection probe 10 of the detection device fits against the end face of the single wafer rod.

[0043] From the above description, it can be seen that the above embodiments of the present invention achieve the following technical effects:

[0044] 1. Effectively solve the problem of poor detection effect of a single wafer rod in the prior art;

[0045] 2. The structure is simple and the performance is stable.

[0046] Obviously, the above-described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0047] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprise" and / or "include" are used in this specification, they indicate the presence of features, steps, operations, devices, components, and / or combinations thereof.

[0048] It should be noted that the terms "first", "second", etc. in the description, claims and the above-mentioned drawings of this application are used to distinguish similar objects, and do not necessarily have to be used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances, so that the embodiments of this application described here can be implemented in an order other than those illustrated or described here.

[0049] The above are only the preferred embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention can have various changes and modifications. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. A detection device, characterized in that, Comprising: A detection probe (10), the detection probe (10) having a detection surface (11), and the detection surface (11) having a sensor center (12); Detection probes (20), there being at least four of the detection probes (20), the detection probes (20) being telescopically arranged on the detection surface (11), and the extending direction and the telescopic direction of the detection probes (20) both being perpendicular to the detection surface (11); The detection probe (20) has a retracted position and an extended position, and when the detection probe (20) is in the retracted position, the detection probe (20) is located inside the detection probe (10).

2. The detection device according to claim 1, wherein The distances from the four detection probes (20) to the sensor center (12) are equal.

3. The detection device according to claim 1, characterized in that, The four detection probes (20) are respectively a first probe (21), a second probe (22), a third probe (23), and a fourth probe (24), The line connecting the first probe (21) and the second probe (22) is parallel to the line connecting the third probe (23) and the fourth probe (24); and / or The line connecting the first probe (21) and the third probe (23) is parallel to the line connecting the second probe (22) and the fourth probe (24).

4. The detection device according to claim 1, wherein The distances between the four detection probes (20) and the center line (13) of the sensor center (12) are equal, and are greater than or equal to 30 mm and less than or equal to 40 mm.

5. The detection device according to claim 1, characterized in that The distance between the four detection probes (20) and the center line (13) of the sensor center (12) is 35 mm.

6. The detection device according to claim 1, characterized in that, The detection device further includes at least four reset members, the number of the reset members being equal to and corresponding one by one to the number of the detection probes (20), at least a part of the reset members being located inside the detection probe (10), one end of the reset members abutting against the detection probe (10), and the other end of the reset members abutting against the corresponding detection probe (20).

7. The detection device according to any one of claims 1 to 6, characterized in that When the detection probe (20) is in the retracted position, the extended end of the detection probe (20) is flush with the detection surface (11).

8. A single wafer bar detection method, characterized in that, Using the detection device according to any one of claims 1 to 7 to detect the center of the end face of a single crystal ingot, during the detection process, The four detection probes (20) of the detection device respectively abut against the end face of the single crystal ingot; Press the detection device to make the detection probe (20) contract until the detection surface (11) of the detection probe (10) of the detection device fits against the end face of the single crystal ingot.

9. A method for detecting a single wafer rod, characterized in that, Using the detection device according to any one of claims 1 to 7 to detect the edge of a single crystal ingot, during the detection process, Any two adjacent ones of the four detection probes (20) of the detection device abut against the end face of the single crystal ingot, and the other two detection probes (20) abut against the peripheral edge of the single crystal ingot; Press the detection device so that the detection probe (20) in contact with the end face of the single-wafer rod contracts until the detection surface (11) of the detection probe (10) of the detection device fits against the end face of the single-wafer rod.

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