Method for simulating degumming effect of silicon wafer degumming agent in laboratory

Abstract

The invention discloses a method for simulating the degumming effect of a silicon wafer degumming agent in a laboratory, which comprises the following steps of: S1, selecting a clean thick sheet, measuring the thickness h1 of the thick sheet, uniformly smearing a layer of glue on the surface of the thick sheet, simulating a diamond wire cutting process by using a knife when the glue is half-dry, uniformly and thoroughly scratching the glue layer, after the glue is completely dried after standing for two hours, the thick sheet is broken, the thickness h2 of the thick sheet and the glue layer is measured, and the thickness delta h = h2-h1 of the glue layer is obtained. According to the method for simulating the degumming effect of the silicon wafer degumming agent in the laboratory, the performance of the degumming agent can be accurately evaluated, the formula and process parameters of the degumming agent are optimized, the efficient, nontoxic, odorless and low-volatile degumming agent is developed, the research and development cost is reduced, the credibility of experimental results is enhanced, and the success rate of subsequent computer verification is remarkably increased; product research and development bending caused by simulation deviation is reduced, stable industrial production is guaranteed, the quality and productivity of silicon wafers are improved, and cost is reduced and efficiency is improved.

Description

Technical Field

[0001] The invention relates to the technical field of photovoltaic slice debonding, in particular to a method for simulating the debonding effect of a silicon wafer debonding agent in a laboratory. Background Art

[0002] Against the backdrop of the rapid development of the global solar energy and microelectronics industries, silicon wafers are evolving towards thinner wafers. This trend places extremely stringent requirements on the silicon wafer cutting process. After the silicon wafer is cut, the silicon wafer needs to be separated from the cutting carrier. The debonding process plays a key role in this process. Traditional debonding agents have many disadvantages. Their penetration ability is poor, and it is difficult to penetrate into the saw seam in a short time. They cannot effectively remove the silicon powder mixed between silicon wafers.

[0003] Some conventional degumming agents often take a long time to achieve the degumming effect when facing narrow saw seams, which greatly restricts the improvement of the overall production capacity of the silicon wafer cutting process. In addition, many traditional degumming agents need to be effective at higher temperatures. Generally, the degumming temperature is higher than 60°C. The high temperature environment not only increases the risk of silicon wafer oxidation, but may also cause changes in the physical and chemical properties of the silicon wafer, affecting its subsequent processing and application. For some temperature-sensitive silicon wafer materials, high-temperature degumming may cause irreparable damage. With the continuous growth of silicon wafer market demand and the increasing requirements for silicon wafer quality, the development of a new type of silicon wafer degumming agent with high efficiency, low temperature and good permeability is urgent.

[0004] Traditional laboratory simulation methods often find it difficult to accurately control various influencing factors, resulting in deviations between the simulation results and the degumming effects in actual production. For example, when controlling the degumming temperature, there may be large temperature fluctuations; when simulating the surface state of silicon wafers, it is difficult to completely replicate the microstructure and impurity distribution of the silicon wafer surface in actual production. These limitations make the degumming effects simulated in the laboratory inaccurate, thereby affecting the efficiency and quality of degumming agent research and development. Summary of the Invention

[0005] In view of the deficiencies of the prior art, the present invention provides a method for simulating the debonding effect of a silicon wafer debonding agent in a laboratory, which solves the problems mentioned in the above background technology.

[0006] To achieve the above objectives, the present invention is implemented through the following technical solutions: a method for simulating the debonding effect of a silicon wafer debonding agent in a laboratory, specifically comprising the following steps:

[0007] S1. Select a clean thick slice, measure its thickness h1, evenly apply a layer of glue on the surface of the thick slice. When the glue is semi-dry, use a knife to simulate the diamond wire cutting process and evenly cut through the glue layer with a scratch spacing of 1 mm. After standing for two hours until the glue is completely dry, break the thick slice and measure the thickness h2 of the thick slice and the glue layer. Obtain the glue layer thickness Δh = h2 - h1, and ensure that Δh is within the range of 200 - 300 μm;

[0008] S2. Prepare degreasers with different formulations, with a dilution ratio of 1:10. Put the prepared degreaser solution into a constant temperature water bath for heating, with a heating temperature of 60°C - 65°C. Ensure that the heating temperatures of the degreaser solutions with different components are the same. After heating to the same temperature, put the prepared fragments into the degreaser solution, with 3 - 5 fragments in each degreaser solution to ensure the same number of fragments;

[0009] S3. Start timing after adding the fragments. After 500 s, observe the degree of separation of the film from the fragments in each degreaser solution, compare the degreasing capabilities of the degreaser solutions with different formulations. For those with better degreasing capabilities, the glue layer can be completely separated from the silicon wafer;

[0010] S4. Clean and dry the degreased fragments, then observe whether there is residual glue or damage on the surface of the fragments to evaluate the performance of the degreaser;

[0011] S5. Add the cutting fluid after cutting to the degreaser solutions with different formulations in equal proportions, compare the odors generated by different degreasers, evaluate the odor level, and screen out the degreaser formulation with a lower odor level;

[0012] S6. According to the evaluation of the degreasing performance and odor level, adjust the degreaser formulation and process parameters to develop a highly efficient, non-toxic, odorless, and low-volatility degreaser;

[0013] S7. To improve the accuracy and reliability of the results, the degreaser with the same formulation can repeat the above experiment multiple times.

[0014] Preferably, in S2, prepare degreasers with different formulations and ensure that the dilution ratios of the degreasers with different formulations are the same.

[0015] Preferably, in S2, during the heating operation, ensure that the heating temperatures of the degreaser solutions with different components are the same.

[0016] Beneficial Effects

[0017] The present invention provides a method for simulating the degreasing effect of a silicon wafer degreaser in a laboratory. Compared with the prior art, it has the following beneficial effects:

[0018] The method for simulating the degumming effect of silicon wafer degumming agent in the laboratory: S1. Select a clean thick wafer, measure the thickness h1 of the thick wafer, evenly apply a layer of glue on the surface of the thick wafer. When the glue is semi-dry, simulate the diamond wire cutting process with a knife, evenly cut through the glue layer, with a scratch spacing of 1 mm. After standing for two hours until the glue is completely dry, break the thick wafer and measure the thickness h2 of the thick wafer and the glue layer, and obtain the glue layer thickness Δh = h2 - h1, ensuring that Δh is within the range of 200 - 300 μm; S2. Prepare degumming agents with different formulations, with a dilution ratio of 1:10. Put the prepared degumming agent solution into a constant temperature water bath and heat it, with a heating temperature of 60°C - 65°C, ensuring that the heating temperatures of the degumming agent solutions with different components are the same. After heating to the same temperature, put the prepared fragments into the degumming agent solution, and put 3 - 5 fragments into each degumming agent solution, ensuring that the number of fragments is the same; S3. Start timing after adding the fragments. After 500 s, observe the degree of film separation of the fragments in each degumming agent solution, compare the degumming capabilities of the degumming agent solutions with different formulations. For the one with better degumming ability, the glue layer can be completely separated from the silicon wafer; S4. After cleaning and drying the degummed fragments, observe whether there is residual glue or damage on the surface of the fragments to evaluate the performance of the degumming agent; S5. Add the cutting fluid after cutting to the degumming agent solutions with different formulations in equal proportion, compare the odors generated by different degumming agents, evaluate the odor level, and screen the degumming agent formulation with a lower odor level; S6. According to the evaluation of the degumming performance and odor level, adjust the degumming agent formulation and process parameters to develop a highly efficient, non-toxic, odorless, and low-volatility degumming agent; S7. To improve the accuracy and reliability of the results, the degumming agent with the same formulation can repeat the above experiment multiple times; By being able to accurately evaluate the performance of the degumming agent, optimize the degumming agent formulation and process parameters, develop a highly efficient, non-toxic, odorless, and low-volatility degumming agent, reduce the R & D cost, enhance the credibility of the experimental results, significantly improve the success rate of subsequent on-machine verification, reduce the detours in product R & D due to simulation deviation, ensure the stability of industrial production, improve the quality and production capacity of silicon wafers, and reduce costs and increase efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 It is a flowchart of the steps of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0020] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0021] Please refer to Figure 1 , the present invention provides three technical solutions: A method for simulating the degumming effect of silicon wafer degumming agent in the laboratory, specifically including the following embodiments:

[0022] Example 1

[0023] S1. Select a clean thick piece, measure the thickness h1 of the thick piece, evenly apply a layer of glue on the surface of the thick piece. When the glue is semi-dry, use a knife to simulate the diamond wire cutting process, evenly cut through the glue layer, with a scratch spacing of 1 mm. After standing for two hours until the glue is completely dry, break the thick piece, measure the thickness h2 of the thick piece and the glue layer, and obtain the glue layer thickness Δh = h2 - h1, ensuring that Δh is within the range of 250 μm;

[0024] S2. Prepare degreasers with different formulations, with a dilution ratio of 1:10. Put the prepared degreaser solution into a constant temperature water bath for heating, with a heating temperature of 62 °C, ensuring that the heating temperatures of the degreaser solutions with different components are the same. After heating to the same temperature, put the prepared fragments into the degreaser solution, with 4 fragments put into each degreaser solution, ensuring that the number of fragments is the same;

[0025] S3. Start timing after adding the fragments. After 500 s, observe the degree of film separation of the fragments in each degreaser solution, compare the degreasing capabilities of the degreaser solutions with different formulations. For those with better degreasing capabilities, the glue layer can be completely separated from the silicon wafer;

[0026] S4. Clean and dry the degreased fragments, and then observe whether there is residual glue or damage on the surface of the fragments to evaluate the performance of the degreaser;

[0027] S5. Add the cutting fluid after cutting to the degreaser solutions with different formulations in equal proportions, compare the odors generated by different degreasers, evaluate the odor level, and screen out the degreaser formulation with a lower odor level;

[0028] S6. According to the evaluation of the degreasing performance and odor level, adjust the degreaser formulation and process parameters to develop a highly efficient, non-toxic, odorless, and low-volatility degreaser;

[0029] S7. To improve the accuracy and reliability of the results, the above experiments can be repeated multiple times for the degreaser with the same formulation.

[0030] Example 2

[0031] S1. Select a clean thick piece, measure the thickness h1 of the thick piece, evenly apply a layer of glue on the surface of the thick piece. When the glue is semi-dry, use a knife to simulate the diamond wire cutting process, evenly cut through the glue layer, with a scratch spacing of 1 mm. After standing for two hours until the glue is completely dry, break the thick piece, measure the thickness h2 of the thick piece and the glue layer, and obtain the glue layer thickness Δh = h2 - h1, ensuring that Δh is within the range of 200 μm;

[0032] S2. Prepare degumming agents with different formulations, with a dilution ratio of 1:10. Put the prepared degumming agent solution into a constant temperature water bath and heat it to 60°C. Ensure that the heating temperatures of the degumming agent solutions with different components are the same. After heating to the same temperature, put the prepared fragments into the degumming agent solution, and put 3 fragments into each degumming agent solution to ensure the same number of fragments.

[0033] S3. Start timing after adding the fragments. After 500 s, observe the degree of separation of the film from the fragments in each degumming agent solution, and compare the degumming capabilities of the degumming agent solutions with different formulations. For those with better degumming capabilities, the adhesive layer can be completely separated from the silicon wafer.

[0034] S4. Clean and dry the degummed fragments, and then observe whether there is residual glue or damage on the surface of the fragments to evaluate the performance of the degumming agent.

[0035] S5. Add the cutting fluid after cutting to the degumming agent solutions with different formulations in equal proportions, compare the odors generated by different degumming agents, evaluate the odor level, and screen the degumming agent formulation with a lower odor level.

[0036] S6. Adjust the degumming agent formulation and process parameters according to the evaluation of the degumming performance and odor level, and develop a highly efficient, non-toxic, odorless, and low-volatility degumming agent.

[0037] S7. To improve the accuracy and reliability of the results, the degumming agent with the same formulation can repeat the above experiment multiple times.

[0038] Example 3

[0039] S1. Select a clean thick piece and measure its thickness h1. Apply a layer of glue evenly on the surface of the thick piece. When the glue is semi-dry, use a knife to simulate the diamond wire cutting process and evenly cut through the adhesive layer with a scratch spacing of 1 mm. After standing for two hours until the glue is completely dry, break the thick piece and measure the thicknesses of the thick piece and the adhesive layer h2, and obtain the adhesive layer thickness Δh = h2 - h1, ensuring that Δh is within the range of 300 μm.

[0040] S2. Prepare degumming agents with different formulations, with a dilution ratio of 1:10. Put the prepared degumming agent solution into a constant temperature water bath and heat it to 65°C. Ensure that the heating temperatures of the degumming agent solutions with different components are the same. After heating to the same temperature, put the prepared fragments into the degumming agent solution, and put 5 fragments into each degumming agent solution to ensure the same number of fragments.

[0041] S3. Start timing after adding the fragments. After 500 s, observe the degree of separation of the film from the fragments in each degumming agent solution, and compare the degumming capabilities of the degumming agent solutions with different formulations. For those with better degumming capabilities, the adhesive layer can be completely separated from the silicon wafer.

[0042] S4. Clean the degummed fragments, dry them, and then observe whether there is residual glue or damage on the surface of the fragments to evaluate the performance of the degumming agent;

[0043] S5. Add the cutting fluid after cutting into the degumming agent solutions with different formulations in equal proportions, compare the odors produced by different degumming agents, evaluate the odor levels, and screen the degumming agent formulations with lower odor levels;

[0044] S6. According to the evaluation of the degumming performance and odor levels, adjust the degumming agent formulation and process parameters to develop a highly efficient, non-toxic, odorless, and low-volatility degumming agent;

[0045] S7. To improve the accuracy and reliability of the results, the degumming agent of the same formulation can repeat the above experiments multiple times.

[0046] Meanwhile, the content not described in detail in this specification belongs to the prior art well-known to those skilled in the art.

[0047] Effect Examples

[0048] Apply the silicon wafer degumming agents prepared in the examples and comparative examples to silicon wafer degumming, and test the degumming effect of the silicon wafer degumming agent mixed with recycled water (the pressure-filtered water of the slicing wastewater). Measure 30L of the silicon wafer degumming agents prepared in the examples and comparative examples respectively, and mix and dilute them with recycled water according to a volume ratio of 1:6 to prepare a working solution. The pH value range of the working solution is 1.0 - 2.5. Add the working solution into the degumming tank of the degumming machine, set the working temperature to 55°C, and test under the same test conditions. The test silicon wafer specifications are 182mm in size and 130μm in thickness. When it is impossible to remove the glue for two consecutive cuts, it is determined as the degumming limit value.

[0049] The test results are shown in the following table:

[0050]

[0051] As can be seen from the above table, it is possible to accurately evaluate the performance of the degumming agent, optimize the degumming agent formulation and process parameters, develop a highly efficient, non-toxic, odorless, and low-volatility degumming agent, reduce the R & D cost, enhance the credibility of the experimental results, significantly improve the success rate of subsequent on-machine verification, reduce the detours in product R & D caused by simulation deviations, ensure the stability of industrial production, improve the quality and production capacity of silicon wafers, and reduce costs and increase efficiency.

[0052] It should be noted that in this text, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the term "comprising", "including" or any other variation thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device comprising a series of elements not only includes those elements, but also includes other elements not expressly listed, or elements inherent to such process, method, article or device.

[0053] Although the embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that various changes, modifications, substitutions and variations can be made to these embodiments without departing from the principles and spirit of the present invention, and the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A method for simulating the degumming effect of a silicon wafer degumming agent in a laboratory, characterized in that: Specifically, it includes the following steps: S1. Select a cleaned thick piece, measure the thickness h1 of the thick piece, evenly apply a layer of glue on the surface of the thick piece. When the glue is semi-dry, use a knife to simulate the diamond wire cutting process and evenly cut through the glue layer with a scratch spacing of 1 mm. After standing for two hours until the glue is completely dry, break the thick piece and measure the thickness h2 of the thick piece and the glue layer. Obtain the glue layer thickness Δh = h2 - h1, and ensure that Δh is within the range of 200 - 300 μm; S2. Prepare degreasers with different formulations, with a dilution ratio of 1:

10. Put the prepared degreaser solution into a constant temperature water bath for heating, with a heating temperature of 60°C - 65°C. Ensure that the heating temperatures of the degreaser solutions with different components are the same. After heating to the same temperature, put the prepared fragments into the degreaser solution, with 3 - 5 fragments put into each degreaser solution to ensure the same number of fragments; S3. Start timing after adding the fragments. After 500 s, observe the degree of separation between the film and the fragments in each degreaser solution, compare the degreasing capabilities of the degreaser solutions with different formulations. For those with better degreasing capabilities, the glue layer can be completely separated from the silicon wafer; S4. Clean and dry the degreased fragments, and then observe whether there is residual glue or damage on the surface of the fragments to evaluate the performance of the degreaser; S5. Add the cutting fluid after cutting to the degreaser solutions with different formulations in equal proportions, compare the odors generated by different degreasers, evaluate the odor level, and screen out the degreaser formulation with a lower odor level; S6. According to the evaluation of the degreasing performance and odor level, adjust the degreaser formulation and process parameters to develop a highly efficient, non-toxic, odorless, and low-volatility degreaser; S7. To improve the accuracy and reliability of the results, the degreaser with the same formulation can repeat the above experiment multiple times.

2. A method for simulating the degumming effect of a silicon wafer degumming agent in a laboratory according to claim 1, characterized in that: In S2, prepare degreasers with different formulations and ensure that the dilution ratios of the degreasers with different formulations are the same.

3. A method for simulating the degumming effect of a silicon wafer degumming agent in a laboratory according to claim 1, characterized in that: In S2, during the heating operation, ensure that the heating temperatures of the degreaser solutions with different components are the same.

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