Visible light and infrared band electromagnetic modulation structure, processing device and processing method

Abstract

The invention discloses a visible light and infrared band electromagnetic modulation structure, a processing device and a processing method, and the structure comprises an infrared low-emission substrate layer, a substrate visible light wave-absorbing structure layer and an infrared light sub-structure film layer which are sequentially laminated from bottom to top. The visible light wave-absorbing dielectric layer and the dielectric leading-in film layer are arranged on the infrared light sub-structure film layer in a laminated mode, and the infrared low-emission substrate layer is made of a metal film with the infrared low-absorption and low-emission characteristics; the substrate visible light wave-absorbing structural layer is a first structural body which is periodically distributed and is convex or concave, and the visible light wave-absorbing dielectric layer is a film layer or a structural layer; the structural layer is a second structural body which is provided with a wave-transparent structure and is subjected to surface blackening treatment; and the medium lead-in film layer is one or more layers of composite infrared high-permeability films. The overall structure-material integrated improvement thought is adopted, so that the structure has visible light-infrared band electromagnetic modulation, and multi-spectrum compatibility is achieved.

Description

Technical Field

[0001] The present invention relates to the field of electromagnetic technologies, and particularly to an electromagnetic modulation structure, a processing device, and a processing method in the visible light and infrared wavebands. Background Art

[0002] Infrared electromagnetic modulation technology refers to using various infrared electromagnetic modulation means to reduce its own infrared signal, lower the contrast between the target and the background, and thus reduce the probability of being detected by the other party's infrared detection system. Specifically, it can also be divided into three categories: shape, local, and material electromagnetic modulation.

[0003] Visible light electromagnetic modulation is to reduce its own visible light signal and lower the probability of being detected by the other party's optical detection equipment. It is particularly crucial in short-range detection. The main means can still be divided into three categories: shape design, coating, and functional structure.

[0004] The above two technologies can only achieve electromagnetic modulation in a single spectrum and cannot simultaneously achieve visible light-infrared waveband electromagnetic modulation. However, with the rapid development of the detection capabilities of space target detection systems internationally, both radar detection equipment and optical imaging equipment, as well as ground-based and space-based detection systems, have superior multi-spectrum detection, identification, and tracking capabilities. This extremely easily causes the detectability of aircraft to soar. Therefore, how to simultaneously achieve high infrared emission and high visible light absorption has become an extremely urgent need. Summary of the Invention

[0005] The present invention aims to at least solve the technical problems existing in the prior art. To this end, in a first aspect of the present invention, an electromagnetic modulation structure in the visible light and infrared wavebands is proposed. The structure includes an infrared low-emission base layer, a base visible light absorption structure layer, an infrared photon structure film layer, which are stacked in sequence from bottom to top, and a visible light absorption dielectric layer and a dielectric introduction film layer stacked on the infrared photon structure film layer, wherein: The material of the infrared low-emission base layer is a metal film with infrared low-absorption and low-emission characteristics; The base visible light absorption structure layer is located on the surface of the infrared low-emission base layer and is a first structure with periodically distributed protrusions or depressions. The scale of the first structure is a sub-wavelength scale of visible light waves; The material of the infrared photon structure film layer is a dielectric film. The infrared photon structure film layer realizes the reflection of light with a specific wavelength by controlling the thickness and refractive index of the dielectric film; The visible light absorption dielectric layer is a film layer or a structure layer; the material of the film layer is metal or non-metal; the structure layer is a second structure with a wave-transmitting structure and a surface blackening treatment; the blackened part in the second structure is used to absorb visible light, and the wave-transmitting structure is used to transmit the infrared waveband to the next layer of medium; The medium introduction film layer is one or more layers of composite infrared highly transparent films.

[0006] Optionally, the medium introduction film layer is located above the visible light absorbing medium layer, or the medium introduction film layer is located above and below the visible light absorbing medium layer.

[0007] Optionally, the infrared photon structure film layer is a single-layer zinc selenide dielectric film or a double-layer dielectric film of zinc sulfide and silicon.

[0008] Optionally, the first structure body is any one of a column, a hemisphere, an ellipse, a paraboloid, a cone, a quadrangular pyramid, and a one-dimensional grating. The structural period of the first structure body ranges from nanometers to several micrometers, and the height of the first structure body is 500 nanometers to 1 micrometer; the first structure body and the infrared low-emission base layer are made of the same material or different materials.

[0009] Optionally, the composite infrared highly transparent film is a single-layer film or a multi-layer composite film. The material of the single-layer film is SiO2, and the multi-layer composite film is composed of a material with high anti-reflection performance from visible light to near-infrared and a material with high anti-reflection performance in mid-infrared and far-infrared.

[0010] In a second aspect of the present invention, a processing device for an electromagnetic modulation structure in visible light and infrared bands is proposed. The device is used for the electromagnetic modulation structure in visible light and infrared bands described in the first aspect. The device includes a laser generator, a collimating mirror, a polarization adjusting device, a beam expanding device, a beam combining mirror, an optical wedge, a standard flat plate, a focusing mirror located in the reflection optical path of the beam combining mirror, a three-dimensional adjusting mechanism for adjusting the position of the processing workpiece, and a coating machine, which are sequentially arranged along the optical path; where: The laser generator is used to generate a laser beam; The collimating mirror is used to collimate the laser beam emitted by the laser generator into a parallel light; The polarization adjusting device is used to adjust the polarization state of the laser beam; The beam expanding device is used to expand the laser beam; The beam combining mirror is used to combine the first reflected light and the second reflected light into an interference beam; the first reflected light is the first reflected light generated by the laser beam on the rear surface of the optical wedge, and the second reflected light is the second reflected light generated by the laser beam on the surface of the standard flat plate; The optical wedge and the standard flat plate are respectively used to generate the first reflected light and the second reflected light; The focusing mirror is used to focus the interference beam onto the surface of a preset infrared low-emission base layer to process the surface of the infrared low-emission base layer; The coating machine is used to deposit an infrared photon structure film layer, a visible light absorbing medium layer, and a medium introduction layer on the visible light absorbing structure layer of the substrate.

[0011] Optionally, the angle between the beam combiner and the optical path is 45 degrees.

[0012] A third aspect of the present invention provides a processing method for an electromagnetic modulation structure in the visible and infrared bands, the method comprising: Starting the laser generator, and collimating the laser beam emitted by the laser generator into a parallel light beam through a collimating mirror; According to the shape of the visible light absorbing structure layer of the substrate, adjusting the relative positions of the two triangular optical wedges of the polarization adjusting device along the Z-axis to adjust the laser beam to the required polarization state; according to the period of the visible light absorbing structure layer of the substrate, adjusting the angle and the interval between the optical wedge and the standard flat plate so that the interference fringe interval is the same as the period; After the laser beam passes through the polarization adjusting device, expanding the laser beam through an expanding device; After passing through the expanding device, the laser beam passes through the beam combiner and is transmitted to the optical wedge and the standard flat plate through the rear surface of the optical wedge; the laser beam is reflected on the rear surface of the optical wedge to obtain a first reflected light; the laser beam passing through the optical wedge is reflected on the surface of the standard flat plate to obtain a second reflected light; The first reflected light and the second reflected light meet at the beam combiner and are combined into an interference beam by the beam combiner; The interference beam enters the focusing mirror through the deflection of the beam combiner, and is focused by the focusing mirror onto the surface of a preset infrared low-emissivity base layer to process the surface of the infrared low-emissivity base layer to form a visible light absorbing structure layer of the substrate; Using a coating machine, an infrared photon structure film layer, a visible light absorbing medium layer, and a medium introduction layer are successively deposited on the visible light absorbing structure layer of the substrate to obtain an electromagnetic modulation structure in the visible and infrared bands.

[0013] Optionally, before starting the laser generator, it further includes: Selecting a metal film with infrared low absorption and low emission characteristics as the infrared low-emissivity base layer; Placing the infrared low-emissivity base layer on a three-dimensional adjustment mechanism, and facing the processing surface of the infrared low-emissivity base layer towards the focusing mirror.

[0014] Optionally, the depositing an infrared photon structure film layer, a visible light absorbing medium layer, and a medium introduction layer on the visible light absorbing structure layer of the substrate includes: Using a coating machine to successively deposit an infrared photon structure film layer and a visible light absorbing medium film; Adjust the relative positions of the two triangular optical wedges of the polarization adjustment device along the Z-axis to adjust the laser beam to left-handed circularly polarized light; Adjust the angle between the optical wedge and the standard flat plate to 0.5 degrees; Place the upper surface of the visible light absorbing dielectric film at the focal point of the focusing lens, and use a laser to draw lines on the visible light absorbing dielectric film at the focal point at a preset interval; Use a three-dimensional adjustment mechanism to adjust the position of the workpiece to be processed, so that the upper surface of the visible light absorbing dielectric film leaves the focal point. Using the scanning of the laser beam, a second structure with a wave-transmitting structure and a surface blackening treatment is processed on the upper surface of the visible light absorbing dielectric film to obtain a visible light absorbing dielectric layer composed of the visible light absorbing dielectric film and the second structure; Use a coating machine to evaporate a dielectric introduction layer on the visible light absorbing dielectric layer.

[0015] The electromagnetic modulation structure in the visible and infrared bands provided by the embodiment of the present invention includes an infrared low-emission base layer, a base visible light absorbing structure layer, an infrared photon structure film layer, which are stacked in sequence from bottom to top, and a visible light absorbing dielectric layer and a dielectric introduction film layer stacked on the infrared photon structure film layer. Among them: the material of the infrared low-emission base layer is a metal film with infrared low-absorption and low-emission characteristics; the base visible light absorbing structure layer is located on the surface of the infrared low-emission base layer and is a first structure with periodically distributed protrusions or depressions, and the scale of the first structure is the sub-wavelength scale of visible light waves; the material of the infrared photon structure film layer is a dielectric film, and the infrared photon structure film layer realizes the reflection of light with a specific wavelength by controlling the thickness and refractive index of the dielectric film; the visible light absorbing dielectric layer is a film layer or a structure layer; the material of the film layer is metal or non-metal; the structure layer is a second structure with a wave-transmitting structure and a surface blackening treatment; the blackened part in the second structure is used to absorb visible light, and the wave-transmitting structure is used to transmit the infrared band to the next layer of medium; the dielectric introduction film layer is one or more layers of composite infrared high-transmission films. The present invention as a whole adopts the idea of integrated improvement of structure and material. Through the combination of the infrared low-emission base layer, the base visible light absorbing structure layer, the infrared photon structure film layer, the visible light absorbing dielectric layer, and the dielectric introduction film layer, the structure has electromagnetic modulation in the visible-infrared band, thereby realizing multi-spectrum compatibility. Description of the Drawings

[0016] Figure 1 It is a schematic diagram of an electromagnetic modulation structure in the visible and infrared bands provided by an embodiment of the present invention; Figure 2 It is a schematic diagram of another electromagnetic modulation structure in the visible and infrared bands provided by an embodiment of the present invention; Figure 3 Schematic diagram of the processing device for the electromagnetic modulation structure in the visible and infrared bands provided by the embodiments of the present invention; Figure 4 Flowchart of the steps of a processing method for the electromagnetic modulation structure in the visible and infrared bands provided by the embodiments of the present invention; Figure 5 Schematic diagram of the electromagnetic modulation structure in the visible and infrared bands in Example 1 provided by the embodiments of the present invention; Figure 6 Schematic diagram of the electromagnetic modulation structure in the visible and infrared bands in Example 2 provided by the embodiments of the present invention. Detailed implementation manners

[0017] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without making creative efforts belong to the scope of protection of the present invention.

[0018] Hereinafter, the terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the embodiments of the present disclosure, unless otherwise stated, the meaning of "a plurality" is two or more. Additionally, the use of "based on" or "according to" is meant to be open and inclusive, because a process, step, calculation, or other action "based on" or "according to" one or more of the stated conditions or values may in practice be based on additional conditions or values beyond those stated.

[0019] Figure 1 Schematic diagram of an electromagnetic modulation structure in the visible and infrared bands provided by the embodiments of the present invention.

[0020] As Figure 1 shown, the electromagnetic modulation structure includes an infrared low-emission base layer, a base visible light absorbing structure layer, an infrared photon structure film layer, which are stacked in sequence from bottom to top, and a visible light absorbing dielectric layer and a dielectric introduction film layer stacked on the infrared photon structure film layer.

[0021] Among them, the material of the infrared low-emission base layer is a metal film with infrared low-absorption and low-emission characteristics.

[0022] Specifically, the infrared low-emission base layer achieves low absorption and low emissivity in the infrared band through material selection. Generally, metal films such as silver, gold, tungsten, etc. are selected, and the order of absorptivity and emissivity is tungsten > gold > silver. The thickness of the infrared low-emission base layer is in the order of hundreds of nanometers.

[0023] The visible light absorbing structure layer of the substrate is located on the surface of the infrared low-emission base layer and is a first structure with periodically distributed protrusions or depressions. The scale of the first structure is at the sub-wavelength scale of visible light waves.

[0024] Specifically, the visible light absorbing structure layer of the substrate is a first structure with periodically distributed protrusions. The first structure is a visible light absorbing structure of the substrate prepared on the surface of the infrared low-emission base layer. The visible light absorbing structure of the substrate and the infrared photon structure film layer of the upper layer form a cavity. Through the resonance of visible light in the cavity, The absorption ability of visible light is further improved.

[0025] The size (such as width, diameter) of the visible light absorbing structure layer of the substrate is less than the visible light wavelength (400 - 700 nm) to avoid the problem of the diffraction limit of light, thereby enhancing the absorption of specific wavelengths.

[0026] As an alternative embodiment, the first structure is any one of a pillar, a hemisphere, an ellipse, a paraboloid, a cone, a pyramid, a one-dimensional grating, etc. The structural period of the first structure is in the range of nanometers to several micrometers, and the height of the first structure is 500 nanometers to 1 micrometer; the first structure and the infrared low-emission base layer are of the same material or different materials.

[0027] Specifically, the height of the first structure is 500 nanometers to 1 micrometer, ensuring that light undergoes multiple reflections / interferences within the structure and enhancing the absorptivity.

[0028] The first structure and the infrared low-emission base layer are of the same material or different materials. The two can be processed integrally and can be of the same material. When they are of different materials, different material combinations will affect the light - heat conversion efficiency or compatibility. For example, tungsten is used for the infrared low-emission substrate and gold is used for the first structure.

[0029] The material of the infrared photon structure film layer is a dielectric film. The infrared photon structure film layer realizes the reflection of light with a specific wavelength by controlling the thickness and refractive index of the dielectric film.

[0030] Specifically, the dielectric film is a non-metallic optical thin film, which is characterized by having a specific refractive index and low optical loss. Different from the metal film, the dielectric film regulates light through the interference effect rather than free electron reflection. By adjusting the film thickness and refractive index, the film layer can efficiently reflect only specific infrared wavelengths while allowing other wavelengths to be transmitted or absorbed.

[0031] The infrared photon structure film layer realizes the reflection of light with a specific wavelength by controlling the thickness and refractive index of the film. Specifically, it follows the optical thickness nh of a λ / 4 wavelength film, where n is the refractive index of the film layer and h is the thickness of the film layer.

[0032] As an alternative embodiment, the infrared photon structure film layer is a single-layer zinc selenide dielectric film or a double-layer dielectric film of zinc sulfide and silicon.

[0033] Specifically, the infrared photon structure film layer is composed of a single layer of zinc selenide or a double-layer dielectric film of zinc sulfide + silicon.

[0034] The visible light absorbing dielectric layer is a film layer or a structural layer; the material of the film layer is metal or non-metal; the structural layer is a second structure with a wave-transmitting structure and a surface blackening treatment; the blackened part in the second structure is used to absorb visible light, and the wave-transmitting structure is used to transmit the infrared band to the next layer of medium.

[0035] Specifically, when the visible light absorbing dielectric layer is a film layer, the material of the film layer can be selected from metals and non-metals. Metals, such as gold, silver, aluminum, etc., absorb visible light through the oscillation of free electrons, and the thickness needs to be optimized to prevent the reflection of some infrared light. Non-metals, such as carbon black, graphene, transition metal oxides, etc., absorb visible light through electron transition or phonon resonance and have better infrared transmittance.

[0036] The visible light absorbing dielectric layer is a film layer, which can absorb waves through the intrinsic properties of the material, is suitable for large-area preparation, but has low flexibility in spectral regulation.

[0037] When the visible light absorbing dielectric layer is a structural layer, the second structure includes a wave-transmitting structure and a blackened part on the surface. Blackened part: The surface is chemically etched, coated, or has micro-nano structures, and the visible light absorption is enhanced through multiple scattering and material absorption. Wave-transmitting structure: Designed as a geometric shape that is infrared transparent, such as a grid, a hole array, or a specific dielectric material, allowing infrared light to penetrate to the lower layer.

[0038] The dielectric introduction film layer is one or more layers of composite infrared high-transmission films.

[0039] The infrared high-transmission film can capture the visible light to far-infrared spectrum as much as possible into the structure. The thickness of the specific film layer and the number of film layers are determined according to the spectral bandwidth that needs to be highly transmitted or absorbed. It can have low emissivity selectivity in the infrared band or can achieve all low reflection in the range of 2 to 14 microns.

[0040] As an alternative embodiment, the composite infrared high-transmission film is a single-layer film or a multi-layer composite film. The material of the single-layer film is SiO2, and the multi-layer composite film is composed of a material with high visible light to near-infrared transmittance and a material with high mid-infrared and far-infrared transmittance combined.

[0041] Specifically, materials with high visible to near-infrared transmittance include SiO2, HfO2, TiO2, Al2O3, etc., and materials with high mid-infrared and far-infrared transmittance include ZnS, ZnSe, ZrO2, HfO2, MgF2, Ta2O5, Si, Ge, etc.

[0042] As an alternative embodiment, the dielectric introduction film layer is located above the visible light absorbing dielectric layer, or the dielectric introduction film layer is located above and below the visible light absorbing dielectric layer.

[0043] As Figure 1 shown, the dielectric introduction film layer is located above the visible light absorbing dielectric layer.

[0044] Figure 2 It is a schematic diagram of another electromagnetic modulation structure in the visible and infrared bands provided by the embodiment of the present invention.

[0045] As Figure 2 shown, the dielectric introduction film layer is located above and below the visible light absorbing dielectric layer.

[0046] When the dielectric introduction film layer is located above the visible light absorbing dielectric layer, it can reduce the reflection loss of visible light at the air-absorbing layer interface, improve the absorption efficiency. It can avoid the direct exposure of the visible light absorbing material to the environment. It is suitable for systems that require maximizing visible light absorption and have clear infrared transmission requirements. When the dielectric introduction film layer is located above and below the visible light absorbing dielectric layer, the upper film layer can optimize the optical coupling from air to the visible light absorbing dielectric layer, and the lower film layer can optimize the transition from the visible light absorbing dielectric layer to the infrared photon structure layer, reducing the interface reflection in the infrared band. It is suitable for precision systems that require simultaneous regulation of visible light absorption and infrared transmission / reflection.

[0047] The electromagnetic modulation structure in the visible and infrared bands of the present invention has the following advantages: 1) The overall idea of structure-material integration is adopted. Through the combination of the dielectric introduction film layer, the visible light absorbing transparent dielectric film, the substrate visible light absorbing structure, and the infrared high-emissivity substrate structure, the structure has electromagnetic modulation in the full optical bands of visible light-infrared-laser, solving the problem of incompatibility of multiple spectra; 2) Compared with the commonly used methods in the art such as coating, nano flocking, sandblasting, etc., this structure is directly processed on the material surface, without the interface effect of different materials, will not change with the changes of the environment such as time, high and low temperature, humidity, etc., and will not fall off resulting in performance degradation or even failure; 3) Coating the medium introduction film layer can direct more incident light in the full optical band spectrum into the structure, rather than causing the spectrum to be reflected at the interface due to interface effects. In addition, these film layers can also change the surface stress state and reduce the surface roughness, thereby improving its high-temperature strength. For example, coating a silica thin film is expected to double the compressive strength and increase the transmittance by more than 98%; 4) The substrate visible light absorbing structure has excellent visible light-near infrared absorbing ability, and its structural morphology is variable. Through mechanisms such as surface plasmon resonance, microcavity resonance, and interface equivalent dielectric environment caused by subwavelength structures for light waves on its surface, the absorbing ability of visible light to near infrared is increased.

[0048] In summary, the electromagnetic modulation structure in the visible and infrared bands provided by the embodiments of the present invention includes, from bottom to top, an infrared low-emission base layer, a substrate visible light absorbing structure layer, an infrared photon structure film layer, and a visible light absorbing medium layer and a medium introduction film layer stacked on the infrared photon structure film layer, where: the material of the infrared low-emission base layer is a metal film with infrared low absorption and low emission characteristics; the substrate visible light absorbing structure layer is located on the surface of the infrared low-emission base layer and is a first structure with periodically distributed protrusions or depressions, and the scale of the first structure is the subwavelength scale of visible light waves; the material of the infrared photon structure film layer is a dielectric film, and the infrared photon structure film layer realizes the reflection of light with a specific wavelength by controlling the thickness and refractive index of the dielectric film; the visible light absorbing medium layer is a film layer or a structure layer; the material of the film layer is metal or non-metal; the structure layer is a second structure with a wave-transmitting structure and a surface blackening treatment; the blackened part in the second structure is used to absorb visible light, and the wave-transmitting structure is used to transmit the infrared band to the next layer of medium; the medium introduction film layer is a single layer or multiple layers of composite infrared high-transmission films. The present invention overall adopts the idea of integrated structure-material improvement. Through the combination of the infrared low-emission base layer, the substrate visible light absorbing structure layer, the infrared photon structure film layer, the visible light absorbing medium layer, and the medium introduction film layer, the structure has electromagnetic modulation in the visible-infrared bands, thereby achieving multi-spectrum compatibility.

[0049] Figure 3 It is a schematic diagram of a processing device for the electromagnetic modulation structure in the visible and infrared bands provided by the embodiments of the present invention.

[0050] This device is used for processing Figure 1 and Figure 2 the electromagnetic modulation structure in the visible and infrared bands, and the device includes a laser generator, a collimating mirror, a polarization adjustment device, a beam expander, a beam combiner, an optical wedge, a standard flat plate placed in sequence along the optical path, and a focusing mirror, a three-dimensional adjustment mechanism for adjusting the position of the processing workpiece, and a coating machine located in the reflection optical path of the beam combiner; where: The laser generator is used to generate a laser beam; The collimating mirror is used to collimate the laser beam emitted by the laser generator into parallel light; The polarization adjustment device is used to adjust the polarization state of the laser beam; The beam expander is used to expand the laser beam; The beam combining mirror is used to combine the first reflected light and the second reflected light into an interference beam; the first reflected light is the first reflected light generated by the laser beam on the rear surface of the optical wedge, and the second reflected light is the second reflected light generated by the laser beam on the surface of the standard flat plate; The optical wedge and the standard flat plate are respectively used to generate the first reflected light and the second reflected light; The focusing mirror is used to focus the interference beam onto the surface of a preset infrared low-emission base layer to process the surface of the infrared low-emission base layer; The coating machine is used to deposit an infrared photon structure film layer, a visible light absorbing dielectric layer, and a dielectric introduction layer on the substrate visible light absorbing structure layer.

[0051] As an optional embodiment, the angle between the beam combining mirror and the optical path is 45 degrees.

[0052] Specifically, the laser generator is a femtosecond laser.

[0053] The collimating mirror is used to convert a divergent beam (such as a laser, LED light, etc.) into parallel light (collimated light).

[0054] The polarization adjustment unit is responsible for adjusting the polarization state of the laser light source, and can respectively adjust the laser light source to a left / right linearly polarized state, a left / right circularly polarized state. A roulette-type adjustment structure is adopted to switch different polarizing plates. The positions 1, 2, 3, and 4 are respectively a ½ left linear polarizing plate, a ½ right linear polarizing plate, a ¼ right circular polarizing plate, and a ¼ left circular polarizing plate. Left linear polarization, right linear polarization, left circular polarization, and right circular polarization states are respectively generated.

[0055] The beam expander is used to increase the diameter of a laser or other beam, and at the same time reduce the divergence angle of the beam to provide a more stable collimated beam or adapt to a subsequent optical system.

[0056] The beam combining mirror is an optical element that is partially transmissive and partially reflective, and is used to combine two beams of light to form interference.

[0057] As Figure 3 shown, the first beam of the laser beam is reflected by the rear surface of the optical wedge to form the first reflected light. After the second beam of the laser beam passes through the optical wedge, it is reflected by the front surface of the standard flat plate to form the second reflected light. These two beams of light meet at the beam combining mirror, and due to the optical path difference, interference fringes are formed.

[0058] In this way, the beam combiner combines the first reflected light and the second reflected light into an interference beam.

[0059] A prism is a wedge-shaped optical element with a small angle (usually from a few minutes to a few degrees) between its two optical surfaces, and is used to control the deflection of the optical path, adjust the wavefront or polarization state.

[0060] A reference flat is a high-precision optical element with two strictly parallel optical planes, and is mainly used in the fields of optical detection, interferometric measurement, laser system calibration, etc. It is a reference tool for measuring flatness and parallelism.

[0061] In the embodiments of the present invention, the prism and the reference flat are respectively used to generate the first reflected light and the second reflected light.

[0062] After the interference beam is deflected by the beam combiner, it is focused by the focusing mirror onto the surface of the processed sample to form nanoscale periodic light spots.

[0063] A coating machine is a high-vacuum device used to deposit functional thin films on the surface of optical elements or semiconductor substrates, and forms thin films with a thickness ranging from nanometers to micrometers through physical or chemical methods to change the optical, electrical or mechanical properties of materials.

[0064] In the embodiments of the present invention, the coating machine evaporates an infrared photon structure film layer, a visible light absorbing dielectric layer and a dielectric introduction layer on the substrate visible light absorbing structure layer.

[0065] In summary, the processing device for the electromagnetic modulation structure in the visible and infrared bands provided by the embodiments of the present invention includes a laser generator, a collimating mirror, a polarization adjusting device, a beam expanding device, a beam combining mirror, an optical wedge, a standard flat plate, which are sequentially arranged along the optical path, and a focusing mirror, a three-dimensional adjusting mechanism for adjusting the position of the processed workpiece, and a coating machine located on the reflection optical path of the beam combining mirror; wherein: the laser generator is used to generate a laser beam; the collimating mirror is used to collimate the laser beam emitted by the laser generator into a parallel light; the polarization adjusting device is used to adjust the polarization state of the laser beam; the beam expanding device is used to expand the laser beam; the beam combining mirror is used to combine the first reflected light and the second reflected light into an interference beam; the first reflected light is the first reflected light generated by the laser beam on the rear surface of the optical wedge, and the second reflected light is the second reflected light generated by the laser beam on the surface of the standard flat plate; the optical wedge and the standard flat plate are respectively used to generate the first reflected light and the second reflected light; the focusing mirror is used to focus the interference beam on the surface of a preset infrared low-emission base layer to process the surface of the infrared low-emission base layer; the coating machine is used to deposit an infrared photon structure film layer, a visible light absorbing dielectric layer, and a dielectric introduction layer on the visible light absorbing structure layer of the base. Through this processing device, an electromagnetic modulation structure in the visible and infrared bands can be processed. The electromagnetic modulation structure as a whole adopts the idea of integrated improvement of structure and material. Through the combination of the infrared low-emission base layer, the visible light absorbing structure layer of the base, the infrared photon structure film layer, the visible light absorbing dielectric layer, and the dielectric introduction film layer, the structure has electromagnetic modulation in the visible-infrared band, thereby realizing multi-spectrum compatibility.

[0066] Figure 4 It is a flowchart of the steps of a method for processing an electromagnetic modulation structure in the visible and infrared bands provided by the embodiments of the present invention. As Figure 4 shown, the method includes: Step 101, start the laser generator, and collimate the laser beam emitted by the laser generator into a parallel light through the collimating mirror.

[0067] Start the laser generator, and convert the divergent laser into a parallel light through the collimating mirror, providing a parallel beam with excellent directivity to ensure the clarity of subsequent interference fringes and the processing accuracy.

[0068] Step 102, according to the shape of the visible light absorbing structure layer of the base, adjust the relative position of the two triangular optical wedges of the polarization adjusting device along the Z-axis to adjust the laser beam to the required polarization state; according to the period of the visible light absorbing structure layer of the base, adjust the angle and interval between the optical wedge and the standard flat plate so that the interference fringe interval is the same as the period.

[0069] Adjust the relative position of the two triangular optical wedges along the light propagation direction. The double optical wedge combination introduces a controllable phase delay through relative movement, changing the polarization state of the laser.

[0070] According to the period of the substrate visible light absorbing structure layer, adjust the angle θ and the interval d between the optical wedge and the standard flat plate so that the interference fringe spacing is the same as the period.

[0071] The interference fringe spacing is determined by the following formula:

[0072] where is the laser wavelength, n is the refractive index of the medium, and by adjusting θ, can be made equal to the period of the substrate visible light absorbing structure layer.

[0073] Step 103: After the laser beam passes through the polarization adjusting device, expand the laser beam through a beam expander.

[0074] By expanding the beam, the processing area can be increased, the efficiency can be improved, the energy density can be reduced, and damage to subsequent optical elements can be avoided.

[0075] Step 104: After the laser beam passes through the beam expander, it passes through the beam combiner, and is transmitted to the optical wedge and the standard flat plate through the rear surface of the optical wedge; the laser beam is reflected on the rear surface of the optical wedge to obtain a first reflected light; the laser beam passing through the optical wedge is reflected on the surface of the standard flat plate to obtain a second reflected light.

[0076] The first beam of the laser beam is reflected by the rear surface of the optical wedge to form a first reflected light. The second beam of the laser beam passes through the optical wedge and is reflected by the front surface of the standard flat plate to form a second reflected light.

[0077] Step 105: The first reflected light and the second reflected light meet at the beam combiner and are combined into an interference beam by the beam combiner.

[0078] The first reflected light and the second reflected light meet at the beam combiner. Due to the optical path difference, interference fringes are formed. In this way, the beam combiner combines the first reflected light and the second reflected light into an interference beam.

[0079] Step 106: The interference beam passes through the beam combiner and is refracted into a focusing lens, and is focused by the focusing lens onto the surface of a preset infrared low-emissivity base layer to process the surface of the infrared low-emissivity base layer to form a substrate visible light absorbing structure layer.

[0080] The interfering light beams are focused onto the surface of the infrared low-emissivity base layer by a focusing mirror. The laser energy ablates or modifies the base in the bright areas of the interference fringes to form a periodic structure, and a visible light absorbing structure layer of the base is obtained.

[0081] Step 107: Use a coating machine to successively deposit an infrared photon structure film layer, a visible light absorbing dielectric layer, and a dielectric introduction layer on the visible light absorbing structure layer of the base to obtain an electromagnetic modulation structure in the visible and infrared bands.

[0082] The coating machine deposits an infrared photon structure film layer, a visible light absorbing dielectric layer, and a dielectric introduction layer on the visible light absorbing structure layer of the base.

[0083] As an optional embodiment, before step 101, it further includes: Step 201: Select a metal film with infrared low absorption and low emission characteristics as the infrared low-emissivity base layer; Step 202: Place the infrared low-emissivity base layer on a three-dimensional adjustment mechanism, and face the processing surface of the infrared low-emissivity base layer towards the focusing mirror.

[0084] In steps 201 - 202, select a metal film with infrared low absorption and low emission characteristics as the infrared low-emissivity base layer to lay the physical foundation for infrared low emission. Then, through high-precision three-dimensional positioning, ensure the geometric accuracy of the interference processing. The two jointly guarantee the performance consistency of the finally formed visible-infrared multi-band modulation structure.

[0085] As an optional embodiment, step 107 includes: Step 1071: Use a coating machine to successively deposit an infrared photon structure film layer and a visible light absorbing dielectric film.

[0086] The material of the infrared photon structure film layer is a dielectric film. The infrared photon structure film layer realizes the reflection of light with a specific wavelength by controlling the thickness and refractive index of the dielectric film.

[0087] The visible light absorbing dielectric layer is a film layer or a structure layer; the material of the film layer is metal or non-metal; the structure layer is a second structure body with a wave-transmitting structure and a surface blackening treatment; the blackened part in the second structure body is used to absorb visible light, and the wave-transmitting structure is used to transmit the infrared band to the next layer of dielectric.

[0088] Step 1072: Adjust the relative positions of the two triangular optical wedges of the polarization adjustment device along the Z-axis to adjust the laser beam into a left-handed circularly polarized light.

[0089] The polarization adjustment device is composed of two triangular prisms made of calcite material. The optical axes of the two triangular prisms are perpendicular to each other, with an angle of 2°. When linearly polarized light is incident on the adjustment device, o-light and e-light with the same propagation direction and perpendicular vibration directions are generated. In addition, the o-light in the left prism becomes e-light when it enters the right prism. When the polarization adjustment device is in position one, the phase difference of the light beam is zero, and the polarization state of the laser emitted from the laser remains the same. When the two triangular prisms are moved to the unequal position two along the Z-axis direction, there is a certain phase difference between the two beams of light with perpendicular vibration directions emitted from the adjustment device. Because the e-light from the left prism becomes o-light in the right prism, its total optical path through the left and right prisms is n0l1+nel2. Therefore, when it comes out of the polarization device, the phase difference between the two beams of linearly polarized light with perpendicular vibration directions is: ψ=2π / λ[(nel1+nol2)-(nol1+nel2)] Where λ is the laser wavelength, ne and no are the refractive indices of the laser in the triangular prism, and l1 and l2 are the laser intervals.

[0090] When the laser is incident from different positions on the polarization adjustment device, the corresponding l2-l1 values are different, resulting in different phase values. Any phase value can be obtained by adjusting l2-l1. For example, when the phase difference is π, the beam is converted from left-linear polarization to right-linear polarization. When the phase difference is π / 2 and 3π / 2, respectively, the light is right-handed circularly polarized and left-handed circularly polarized.

[0091] The distance between the two laser beams is related to the relative position of the two triangular wedges along the Z axis. Therefore, by adjusting the relative position of the two triangular wedges of the polarization adjustment device along the Z axis, the laser beam can be adjusted to left-handed circularly polarized light.

[0092] Step 1073: Adjust the angle between the optical wedge and the standard plate to 0.5 degrees.

[0093] The wedge angle is 0.5°, which prevents the reflected light from the front surface of the wedge from participating in the formation of interference fringes.

[0094] Step 1074 : placing the upper surface of the visible light absorbing dielectric film at the focus of the focusing mirror, and using a laser to scribe lines at preset intervals on the visible light absorbing dielectric film at the focus.

[0095] The interfering light beam is refracted by the beam combiner and then focused by the focusing lens onto the surface of the processed sample, forming a nanometer-scale periodic light spot.

[0096] Step 1075: Using a three-dimensional adjustment mechanism, the position of the workpiece is adjusted so that the upper surface of the visible light absorbing dielectric film is away from the focal point. The laser beam is then scanned to form a second structure with a wave-transmitting structure and a blackened surface on the upper surface of the visible light absorbing dielectric film, thereby obtaining a visible light absorbing dielectric layer consisting of the visible light absorbing dielectric film and the second structure. When the visible light absorbing dielectric layer serves as the structural layer, the second structure includes a wave-transmitting structure and a portion with a blackened surface treatment. The blackened surface treatment involves chemical etching, coating, or micro-nanostructuring to enhance visible light absorption through multiple scattering and material absorption. The wave-transmitting structure is designed with an infrared-transparent geometry, such as a grid, hole array, or specific dielectric material, allowing infrared light to penetrate to the underlying layer.

[0097] Step 1076: using a coating machine, evaporate a medium introduction layer on the visible light absorbing medium layer.

[0098] The medium introduction film layer is a single layer or multiple layers of composite infrared high-transmittance film. A coating machine is used to evaporate the infrared high-transmittance film on the visible light absorbing medium layer.

[0099] High-transmittance infrared films capture as much light as possible from the visible to the far-infrared spectrum within the structure. The specific film thickness and number of layers are determined by the spectral bandwidth required for high transmittance or absorption. They can achieve selective low emission in the infrared band or achieve low reflection across the entire 2-14 micron range.

[0100] Specific example 1 of electromagnetic modulation structure in visible light and infrared bands: (1) Design requirements: average reflectivity 2%@380nm~1.7μm, low absorption and reflection, average emissivity 0.5@2μm~14μm.

[0101] (2) Design example: Dielectric introduction film layer: It consists of two layers of SiO2 and germanium, with a thickness of 100nm respectively; Visible light absorbing dielectric layer: The dielectric is tungsten with a thickness of 1 micron. Holes are drilled on its surface with a diameter of 30 microns and a spacing of 100 microns. Nano-stripes are induced on the tungsten surface to generate nano-ion resonance, further improving the absorption capacity of visible light. The micropores allow the remaining light waves to further transmit to the visible light absorbing structure and infrared high emission of the substrate, while ensuring that the infrared high emission light waves are emitted into the air through the micropores. Infrared photonic structure film layer: a single layer of zinc selenide with a thickness of 500nm; Substrate visible light absorbing structure layer: the structure morphology is a hemispherical convex shape, the structure height is 200nm, and the structure period is 700nm; Infrared low-emissivity base layer: For infrared high-emissivity, a substrate with infrared high reflectivity is used, and the substrate material is tungsten.

[0102] (3) Processing device The device mainly includes a femtosecond laser, a collimating mirror, a polarization adjustment device, a beam expander, a beam combiner, an optical wedge, a standard flat plate, a two-dimensional scanning galvanometer, a focusing field lens, etc. According to the period requirement of the visible light absorbing structure to be processed, the included angle between the two triangular prisms of the polarization adjustment device is determined to be 2°, the included angle of the optical wedge is 0.5°, the included angle between the optical wedge and the standard flat plate is 45°, and the focal length of the focusing lens is 100 mm.

[0103] (4) Processing steps: S1: Determine that the infrared low-emissivity substrate material is tungsten; S2: The laser source uses a femtosecond laser; S3: Since the morphology of the visible light absorbing structure is hemispherical, adjust the polarization adjustment device, and the interval between the two triangular prisms along the Z-axis is adjusted to 1 mm to ensure that the laser phase difference is π / 2, which is right-handed polarized light; S4: According to the requirement of the period of 700 nm of the visible light absorbing structure on the substrate, adjust the included angle between the optical wedge and the standard flat plate to 45°, change the interval l, so that the interference fringe interval △l of the device is equal to the absorbing structure period p, which is 700 nm; S5: Assume that the area S' required to be processed by the structure is 2 mm, and the single processing area S of the current device is 100 μm. Then, large-area preparation is achieved by moving the three-dimensional moving platform, and the scanning interval is 100 microns.

[0104] S6: Use a coating machine to successively evaporate the infrared photon structure film zinc selenide, the visible light absorbing dielectric film tungsten, and the dielectric introduction film layer SiO2 film. Figure 5 It is a schematic diagram of the electromagnetic modulation structure in visible and infrared bands in Example 1 provided by the embodiment of the present invention.

[0105] Such as Figure 5 As shown, the structure is successively stacked with an infrared low-emissivity substrate, a substrate visible light absorbing structure, an infrared photon structure film, a visible light absorbing dielectric film, and a dielectric introduction film layer from bottom to top. The substrate visible light absorbing structure is in the shape of a hemispherical protrusion.

[0106] Specific example two of the electromagnetic modulation structure in visible and infrared bands: (1) Design requirements: Average reflectivity 1% @ 380 nm ~ 1.7 μm, low reflection for absorption, average emissivity 0.2 @ 2 μm ~ 14 μm.

[0107] (2) Design example: Dielectric introduction film layer: It is a multi-layer composite infrared high-transmission film system, a SiO2 / Si3N4 / SiO2 three-layer composite film system, and the thickness of each layer is 50 nm.

[0108] Visible light absorption medium film: The material is titanium alloy, and its surface can be blackened by laser processing or other methods to improve the wave absorption ability of visible light. The film thickness is 50 nm, with titanium alloy scribing, and the line interval is 2 mm. The titanium alloy material and the infrared low-emission substrate produce a local enhancement effect, enabling further absorption in the visible light band. Secondly, the interval allows more infrared light waves to enter the dielectric guiding film layer; Infrared photon structure film: A double-layer dielectric film of zinc sulfide + silicon is used, and the film thicknesses of the thin films are 50 nm and 100 nm respectively; Substrate visible light wave absorption structure: The structure morphology is an inverted conical depression shape, with a structure height of 300 nm and a structure period of 1 μm; Infrared low-emission substrate: A dielectric guiding film SiO2 with a thickness of 50 nm is further deposited on its surface; The infrared low-emission uses a substrate with high infrared reflectivity, and the substrate material is gold; (3)Processing device: It mainly includes a femtosecond laser, a collimating mirror, a polarization adjustment device, a beam expander, a beam combiner, an optical wedge, a standard flat plate, a two-dimensional scanning galvanometer, a focusing field lens, etc. According to the period requirements of the visible light wave absorption structure to be processed, the included angle between the two triangular prisms of the polarization adjustment device is determined to be 2°, the included angle of the optical wedge is 0.5°, the included angle between the optical wedge and the standard flat plate is 30°, and the focal length of the focusing lens is 100 mm.

[0109] (4)Processing steps: S1: Determine that the infrared low-emission substrate material is gold; S2: The laser source uses a femtosecond laser; S3: According to the hemispherical shape of the visible light wave absorption structure, adjust the polarization adjustment device, and the interval between the two triangular prisms along the Z-axis is adjusted to 0 mm to ensure no phase difference, and the output is still the linearly polarized light of the laser; S4: According to the requirement of the period of 1 μm of the substrate visible light wave absorption structure, adjust the included angle between the optical wedge and the standard flat plate to 30°, change the interval l, so that the interference fringe interval △l of the device is equal to the wave absorption structure period p, which is 1 μm; S5: Assume that the required processing area S' is 2 mm, and the current single processing area S of the device is 100 μm. Then, large-area preparation is achieved by moving the three-dimensional moving platform, and the scanning interval is 100 μm.

[0110] S6: Use a coating machine to successively evaporate the infrared photon structure film of zinc sulfide + silicon and the visible light absorption medium film of titanium alloy.

[0111] S7: Adjust the laser polarization adjustment device so that the Z-axis spacing between the two prisms is 3 mm to output left-handed circularly polarized light; adjust the angle between the optical wedge and the standard flat plate to zero, i.e., no interference fringes are formed. Then place the upper surface of the titanium alloy at the laser focus, use the laser to draw lines at the focus with a line spacing of 2 mm. Finally, adjust the position of the component using a three-dimensional adjustment mechanism to defocus the upper surface of the titanium alloy, and then use the three-dimensional adjustment mechanism to scan the light beam, thereby processing a structure on the titanium alloy surface and performing blackening treatment to improve the absorption ability of visible light; S8: Finally, use a coating machine to evaporate the dielectric into the Si3N4 film layer.

[0112] Figure 6 It is a schematic diagram of the electromagnetic modulation structure in the visible and infrared bands in the second example provided by the embodiment of the present invention.

[0113] As Figure 6 shown, the structure is successively stacked with an infrared low-emission substrate, a substrate visible light absorption structure, an infrared photon structure film, a visible light absorption dielectric film, and a dielectric introduction film layer from bottom to top. The substrate visible light absorption structure is in the shape of an inverted conical depression.

[0114] In summary, for the processing method of the electromagnetic modulation structure in the visible and infrared bands provided by the embodiment of the present invention, start the laser generator, and collimate the laser beam emitted by the laser generator into a parallel light through a collimating mirror; Adjust the relative positions of the two triangular optical wedges of the polarization adjustment device along the Z-axis according to the shape of the substrate visible light absorbing structure layer, so as to adjust the laser beam to the required polarization state; adjust the angle and the interval between the optical wedge and the standard flat plate according to the period of the substrate visible light absorbing structure layer, so that the interference fringe interval is the same as the period; after the laser beam passes through the polarization adjustment device, expand the laser beam through an expanding device; after the laser beam passes through the expanding device, it passes through a beam combining mirror and is transmitted to the optical wedge and the standard flat plate through the rear surface of the optical wedge; the laser beam generates reflection on the rear surface of the optical wedge to obtain a first reflected light; the laser beam passing through the optical wedge generates reflection on the surface of the standard flat plate to obtain a second reflected light; the first reflected light and the second reflected light meet at the beam combining mirror and are combined into an interference beam by the beam combining mirror; the interference beam enters a focusing mirror through the deflection of the beam combining mirror and is focused by the focusing mirror onto the surface of a preset infrared low-emission substrate layer to process the surface of the infrared low-emission substrate layer to form a substrate visible light absorbing structure layer; use a coating machine to successively evaporate an infrared photon structure film layer, a visible light absorbing dielectric layer, and a dielectric introduction layer on the substrate visible light absorbing structure layer to obtain an electromagnetic modulation structure in the visible and infrared bands. This method generally adopts the idea of integrated improvement of structure and material. Through the combination of the infrared low-emission substrate layer, the substrate visible light absorbing structure layer, the infrared photon structure film layer, the visible light absorbing dielectric layer, and the dielectric introduction film layer, the structure has electromagnetic modulation in the visible-infrared band, so as to achieve multi-spectrum compatibility.

[0115] The technical features of the above embodiments can be combined arbitrarily. For the sake of concise description, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as the scope recorded in this specification.

[0116] The above embodiments only represent several implementation manners of the present application, and their descriptions are relatively specific and detailed, but should not be construed as limiting the scope of the invention patent. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present application, several deformations and improvements can still be made, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application should be subject to the appended claims.

Claims

1. An electromagnetic modulation structure in the visible and infrared bands, characterized in that, The structure includes an infrared low-emission base layer, a base visible light absorbing structure layer, an infrared photon structure film layer, which are stacked in sequence from bottom to top, and a visible light absorbing dielectric layer and a dielectric introduction film layer stacked on the infrared photon structure film layer, where: The material of the infrared low-emission base layer is a metal film with infrared low-absorption and low-emission characteristics; The base visible light absorbing structure layer is located on the surface of the infrared low-emission base layer and is a first structure with periodically distributed protrusions or depressions. The scale of the first structure is the sub-wavelength scale of visible light waves; The material of the infrared photon structure film layer is a dielectric film. The infrared photon structure film layer realizes the reflection of light with a specific wavelength by controlling the thickness and refractive index of the dielectric film; The visible light absorbing dielectric layer is a film layer or a structure layer; the material of the film layer is metal or non-metal; the structure layer is a second structure with a wave-transmitting structure and a surface blackening treatment; the blackened part in the second structure is used to absorb visible light, and the wave-transmitting structure is used to transmit the infrared band to the next layer of dielectric; The dielectric introduction film layer is a single-layer or multi-layer composite infrared high-transmission film.

2. The structure according to claim 1, wherein The dielectric introduction film layer is located above the visible light absorbing dielectric layer, or the dielectric introduction film layer is located above and below the visible light absorbing dielectric layer.

3. The structure according to claim 1, wherein The infrared photon structure film layer is a single-layer zinc selenide dielectric film or a double-layer dielectric film of zinc sulfide and silicon.

4. The structure according to claim 1, wherein The first structure is any one of a column, a hemisphere, an ellipse, a paraboloid, a cone, a quadrangular pyramid, and a one-dimensional grating. The structural period of the first structure ranges from nanometers to several micrometers, and the height of the first structure is 500 nanometers to 1 micrometer; the first structure and the infrared low-emission base layer are of the same material or different materials.

5. The structure according to claim 1, wherein The composite infrared high-transmission film is a single-layer film or a multi-layer composite film. The material of the single-layer film is SiO2, and the multi-layer composite film is composed of a material with high anti-reflection from visible light to near-infrared and a material with high anti-reflection in the mid-infrared and far-infrared combined.

6. A processing device for an electromagnetic modulation structure in the visible and infrared bands, characterized in that, The processing device is used to process the visible light and infrared band electromagnetic modulation structure according to any one of claims 1-5. The device includes a laser generator, a collimating mirror, a polarization adjustment device, a beam expander, a beam combiner, an optical wedge, a standard flat plate, which are placed in sequence along the optical path, and a focusing mirror located on the reflection optical path of the beam combiner, a three-dimensional adjustment mechanism for adjusting the position of the processed workpiece, and a coating machine; where: The laser generator is used to generate a laser beam; The collimating mirror is used to collimate the laser beam emitted by the laser generator into a parallel light; The polarization adjustment device is used to adjust the polarization state of the laser beam; The beam expander is used to expand the laser beam; The beam combiner is used to combine the first reflected light and the second reflected light into an interference beam; the first reflected light is the first reflected light generated by the laser beam on the rear surface of the optical wedge, and the second reflected light is the second reflected light generated by the laser beam on the surface of the standard flat plate; The optical wedge and the standard flat plate are respectively used to generate the first reflected light and the second reflected light; The focusing mirror is used to focus the interference beam onto the surface of a preset infrared low-emissivity base layer to process the surface of the infrared low-emissivity base layer; The coating machine is used to deposit an infrared photon structure film layer, a visible light absorbing dielectric layer, and a dielectric introduction layer on the substrate visible light absorbing structure layer.

7. The device according to claim 6, characterized in that, The angle between the beam combiner and the optical path is 45 degrees.

8. A processing method for an electromagnetic modulation structure in the visible and infrared bands, characterized in that, The method includes: Starting the laser generator, and collimating the laser beam emitted by the laser generator into a parallel light through a collimating mirror; According to the shape of the substrate visible light absorbing structure layer, adjusting the relative positions of the two triangular optical wedges of the polarization adjusting device along the Z-axis to adjust the laser beam to the required polarization state; according to the period of the substrate visible light absorbing structure layer, adjusting the angle and the interval between the optical wedge and the standard flat plate so that the interference fringe interval is the same as the period; After the laser beam passes through the polarization adjusting device, expanding the laser beam through an expanding device; After passing through the expanding device, the laser beam passes through the beam combiner and is transmitted to the optical wedge and the standard flat plate through the rear surface of the optical wedge; the laser beam is reflected on the rear surface of the optical wedge to obtain a first reflected light; the laser beam passing through the optical wedge is reflected on the surface of the standard flat plate to obtain a second reflected light; The first reflected light and the second reflected light meet at the beam combiner and are combined by the beam combiner into an interference beam; The interference beam enters the focusing mirror through the deflection of the beam combiner, and is focused by the focusing mirror onto the surface of a preset infrared low-emissivity base layer to process the surface of the infrared low-emissivity base layer and form a substrate visible light absorbing structure layer; Using a coating machine, an infrared photon structure film layer, a visible light absorbing dielectric layer, and a dielectric introduction layer are successively deposited on the substrate visible light absorbing structure layer to obtain an electromagnetic modulation structure in the visible and infrared bands.

9. According to the processing method described in claim 8, before starting the laser generator, it further includes: Selecting a metal film with infrared low absorption and low emission characteristics as the infrared low-emissivity base layer; Placing the infrared low-emissivity base layer on a three-dimensional adjustment mechanism, and facing the processing surface of the infrared low-emissivity base layer towards the focusing mirror.

10. The processing method according to claim 8, characterized in that, The successively depositing an infrared photon structure film layer, a visible light absorbing dielectric layer, and a dielectric introduction layer on the substrate visible light absorbing structure layer includes: Using a coating machine to successively deposit an infrared photon structure film layer and a visible light absorbing dielectric film; Adjusting the relative positions of the two triangular optical wedges of the polarization adjusting device along the Z-axis to adjust the laser beam to left-handed circularly polarized light; Adjusting the angle between the optical wedge and the standard flat plate to 0.5 degrees; Placing the upper surface of the visible light absorbing dielectric film at the focal point of the focusing mirror, and using a laser to scribe lines on the visible light absorbing dielectric film at the focal point at a preset interval; The position of the workpiece to be processed is adjusted by a three-dimensional adjustment mechanism, so that the upper surface of the visible light absorbing dielectric film is separated from the focal point. By scanning the laser beam, a second structure with a wave-transmitting structure and a surface blackening treatment is processed on the upper surface of the visible light absorbing dielectric film, and a visible light absorbing dielectric layer composed of the visible light absorbing dielectric film and the second structure is obtained; A dielectric introduction layer is evaporated on the visible light absorbing dielectric layer by using a coating machine.

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