Radiation-proof receiver chip design based on two-dimensional wafer-level material

Abstract

The invention belongs to the technical field of integrated circuits, and particularly relates to an anti-radiation receiver chip design based on a two-dimensional wafer-level material. The receiver chip is composed of an antenna array element, a radio frequency switch, an N-path filter based on a time modulation array, a frequency mixer and an intermediate frequency amplifier, and N channel signal input is achieved. The antenna array receives a radio frequency signal, a specific signal is selected based on a differential structure N-path filter of a time modulation array, and other frequency components and noise mixed into an effective input signal are suppressed. According to the radiation-proof receiver chip based on the two-dimensional wafer-level material, a wafer-level two-dimensional semiconductor material is used as a channel, and a high-impedance radiation material is used as a substrate. By virtue of a unique single-layer or few-layer structure and inherent stable chemical bonding, the two-dimensional material shows remarkable tolerance when being irradiated by high-energy particles, so that the formation of radiation-induced defects is effectively inhibited. The long-time stability of the electrical performance of the chip is ensured, and the anti-radiation capability of the circuit is effectively improved. The radiation-proof receiver chip based on the two-dimensional wafer-level material can be widely applied to w satellite communication and manned spaceflight, and has positive influence on exploration of space full of high-energy particle radiation. Due to the excellent radiation resistance, the two-dimensional material has huge potential in application in an extreme environment.

Description

Technical Field

[0001] The present invention belongs to the technical field of integrated circuits, and particularly relates to a receiver chip. Background Art

[0002] With the increasingly wide application of space exploration and electronic devices in some special high-radiation environments, the requirements for the stable operation of receiver chips in complex irradiation environments are constantly increasing. Once the traditional receiver chip is exposed to the irradiation environment, the semiconductor devices inside the chip will suffer from ionization damage, resulting in problems such as the drift of the transistor threshold voltage, leading to a sharp deterioration in the performance of the receiver. As a new type of material that has attracted much attention in recent years, two-dimensional materials show unique potential in the field of radiation resistance. Its atomic-level thickness and unique crystal structure endow the material with excellent radiation resistance. It can not only effectively absorb and scatter high-energy particles, thereby reducing the damage to the material itself by these particles, but also significantly reduce the direct damage of irradiation to sensitive components inside the chip.

[0003] As a new emerging signal processing technology, the N-path filter shows significant advantages in improving the signal spectrum purity and suppressing spurious signals with its unique polyphase filtering structure. It can finely process different frequency components by cleverly switching multiple parallel paths, providing a new idea for improving the filtering performance of the receiver front end. Combining the N-path filter technology with the radiation resistance characteristics of two-dimensional materials and integrating them into the design of radiation-resistant receiver chips is expected to meet the urgent needs of receivers with high reliability and radiation resistance capabilities such as satellite communication and deep space exploration. Summary of the Invention

[0004] The purpose of the present invention is to propose a design of a radiation-resistant receiver chip based on two-dimensional wafer-level materials.

[0005] The design of the radiation-resistant receiver chip based on two-dimensional wafer-level materials proposed by the present invention is composed of N antenna elements, N differential structure N-path filters based on time modulation arrays, a low-noise amplifier, and a mixer.

[0006] The N-path filter has signal inputs of N channels, and its output frequency is determined by the frequency of the clock signal. When the filter network on the channel presents a low-pass characteristic, the N-path filter circuit will present a band-pass characteristic; on the contrary, when the filter network on the channel presents a high-pass characteristic, the N-path filter circuit will present a comb band-stop characteristic. At the same time, the filter adopts a differential structure, and each N-path filter on each branch is a single-switch structure. The output results of the two branches are differentially calculated as the final output to achieve an improved out-of-band rejection effect.

[0007] In the present invention, the transistors of the receiver chip use anti-radiation high-resistance sapphire material as the substrate to reduce the radiation dose reaching the active region of the device and improve the anti-radiation ability of the chip; anti-radiation two-dimensional materials are used as the channel, and hafnium oxide is used as the oxide layer to prepare active transistors, which have intrinsic anti-radiation ability. The two-dimensional semiconductor materials include materials such as molybdenum disulfide, molybdenum diselenide, tungsten disulfide, and tungsten diselenide. Description of the Drawings

[0008] Figure 1 It is a schematic structural diagram of the anti-radiation receiver chip based on two-dimensional wafer-level materials of the present invention. Detailed Embodiments

[0009] The present invention will be described in more detail below with reference to the drawings. In each of the drawings, the same elements are denoted by similar reference numerals. For the sake of clarity, the various parts in the drawings are not drawn to scale. In addition, some well-known parts may not be shown in the figures.

[0010] Many specific details of the present invention are described below, such as the structure, materials, dimensions, processing techniques, and technologies of the device, in order to understand the present invention more clearly. However, as those skilled in the art can understand, the present invention can be implemented without these specific details.

[0011] Figure 1 It shows a schematic design diagram of the anti-radiation receiver chip based on two-dimensional wafer-level materials of the present invention.

[0012] As Figure 1 shown, the anti-radiation receiver chip design 200 based on two-dimensional wafer-level materials in the present invention includes an antenna array 201, a radio frequency switch 202, a differential structure 4-path filter 203 based on a time modulation array, a mixer 204, and an intermediate frequency amplifier 205. The differential structure N-path filter 202 based on the time modulation array has signal inputs of N channels, adopts a differential structure, and each N-path filter on each branch is a single-switch structure. The output results of the two branches are subjected to differential calculation as the final output. The conduction of the switches on different signal paths of the N-path filter is controlled by a pulsed clock signal. At each moment, only one signal path will be connected, and the remaining paths at this moment are all in an open state.

[0013] The receiver chip of the present invention uses anti-radiation high-resistance sapphire material as the substrate and anti-radiation two-dimensional materials as the channel to prepare active transistors, improving the anti-radiation ability of the chip. The two-dimensional semiconductor materials include materials such as molybdenum disulfide, molybdenum diselenide, tungsten disulfide, and tungsten diselenide.

[0014] In this document, the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, such that a series of elements (such as a process, method, article or device) including those elements not only includes those elements but also includes other elements not explicitly listed. Without further limitation, an element defined by the statement "comprising an..." does not exclude the existence of additional identical elements outside the elements including the said element.

[0015] In the present invention, the embodiments do not elaborate all the details, nor limit the invention to the specific embodiments described. According to the above description, many variations can be made. These embodiments are selected and specifically described in this specification to better explain the principles and practical applications of the present invention, so that those skilled in the art can make good use of the present invention and its modifications based on the present invention. The present invention is only limited by the claims and their full scope and equivalents.

Claims

1. A design of an anti-radiation receiver chip based on two-dimensional wafer-level materials, characterized in that, The receiver chip is composed of N antenna elements, N differential structure N-path filters based on time-modulated arrays, a low-noise amplifier, and a mixer.

2. The anti-radiation receiver chip design based on two-dimensional wafer-level materials according to claim 1, characterized in that, The receiver chip uses sapphire material with high resistivity against radiation as the substrate to improve the radiation resistance of transistors.

3. The anti-radiation receiver chip design based on two-dimensional wafer-level materials according to claim 1, characterized in that, In the receiver chip, the transistors use radiation-resistant wafer-level two-dimensional semiconductor materials as the channel and hafnium oxide as the oxide layer, having intrinsic radiation resistance.

4. The two-dimensional material according to claim 3, wherein The two-dimensional semiconductor materials include materials such as molybdenum disulfide, molybdenum diselenide, tungsten disulfide, and tungsten diselenide.

5. The anti-radiation receiver chip design based on two-dimensional wafer-level materials according to claim 1, characterized in that, The filter adopts a differential structure N-path filter based on a time-modulated array, having N signal channels. By modulating the clock signal, the passband frequency of the filter is changed, having reconfigurability.

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