Chain type silicon wafer PSG layer removing equipment

Abstract

The invention discloses chain type silicon wafer PSG layer removing equipment, and relates to the technical field of silicon wafers. Comprising a machine body, and a first cavity and a second cavity are formed in the machine body; the first partition plate is mounted in the machine body; the removing mechanism is arranged outside the first partition plate, the removing mechanism comprises a box body, a working cavity is formed in the box body, and the box body is installed outside the first partition plate; the feeding mechanism is arranged outside the first partition plate, the feeding mechanism comprises a clamping assembly and a supporting assembly, and the clamping assembly and the supporting assembly are used for surrounding the silicon wafer and controlling the upper surface and the lower surface of the silicon wafer to be located inside the liquid and outside the liquid respectively. The fixing groove is formed in the machine body, a first push rod is installed in the fixing groove, and a push plate is installed outside the first push rod; the chain type equipment for removing the PSG layer of the silicon wafer achieves the purpose of improving the use efficiency of the equipment.

Description

Technical Field

[0001] The invention relates to the technical field of silicon wafers, in particular to a chain-type silicon wafer PSG layer removal device. Background Art

[0002] Silicon wafer is a semiconductor material used to produce solar cells. Solar cell silicon wafers usually go through processes such as cleaning, texturing, diffusion, and etching. After the solar cell undergoes the diffusion process, a PSG layer will form on the surface of the silicon wafer. The presence of the PSG layer will affect the appearance and electrical performance, so the PSG layer needs to be removed.

[0003] Patent publication number CN114899125B discloses a chain-type device for removing the PSG layer from silicon wafers. Liquid supply pipes are evenly distributed across the bottom of the process area, aligned with the orientation of the silicon wafers and tilted in the vertical direction to minimize liquid disturbance within the process tanks. This minimizes the consistency of the liquid level and flow direction within the tanks, ensuring uniform etching results. However, during transport, the rollers driving the silicon wafers can easily contaminate the upper surface of the wafers with a large amount of etching liquid, causing damage to the upper surface. Summary of the Invention

[0004] In order to overcome the problem that during the transportation of silicon wafers, the upper surface of the silicon wafers is easily contaminated with a large amount of corrosive liquid due to the movement of the silicon wafers by rollers, resulting in damage to the upper surface of the silicon wafers, the present invention provides a chain-type silicon wafer PSG layer removal device, comprising a body, wherein a first chamber and a second chamber are formed inside the body;

[0005] a first partition plate installed inside the body;

[0006] a removal mechanism, the removal mechanism being disposed outside the first partition, the removal mechanism comprising a box body having a working chamber defined therein, the box body being mounted outside the first partition;

[0007] The feeding mechanism is arranged outside the first partition and includes a clamping assembly and a supporting assembly. The clamping assembly and the supporting assembly are used to surround the silicon wafer and control the upper and lower surfaces of the silicon wafer to be separated into and outside the liquid.

[0008] Preferably, it also includes:

[0009] A fixing groove is provided inside the body, a first push rod is installed inside the fixing groove, and a push plate is installed outside the first push rod;

[0010] a spraying mechanism connected to the removal mechanism;

[0011] The feeding window is provided inside the machine body.

[0012] Preferably, the removing mechanism further includes:

[0013] Circulation pipes, which are connected to the outside of the box body, communicate with the machine body, and a plurality of circulation pipes are provided;

[0014] Overflow pipes, which are connected to the outside of the box body, communicate with the machine body, and a plurality of overflow pipes are provided.

[0015] Preferably, the removing mechanism further includes:

[0016] A fixed box, which is installed on the top of the box body, and a fan is arranged inside the fixed box;

[0017] The first slideway is arranged outside the first partition board and is connected to the spraying mechanism;

[0018] The first connecting plate is installed outside the first partition board, and a moving component is installed outside the first connecting plate.

[0019] Preferably, the moving component includes:

[0020] The second push rod is installed outside the first connecting plate, and an adjusting column is installed at the bottom of the second push rod;

[0021] The second connecting plate is installed at the bottom of the adjusting column, and a third push rod and a fourth push rod are installed at the bottom of the second connecting plate;

[0022] Connectors, there are two connectors, and the two connectors are respectively installed at the bottoms of the third push rod and the fourth push rod;

[0023] The bottom plate is connected to the connectors, and a clamping clip is installed outside the bottom plate. There are two clamping clips, which are symmetrically arranged, and the clamping clips are made of magnetic materials.

[0024] Preferably, the spraying mechanism includes:

[0025] The first slider is slidably connected inside the first slideway, and a fifth push rod is installed at the bottom of the first slider;

[0026] The storage box is installed at the bottom of the fifth push rod, and a plurality of spray pipes are installed at the bottom of the storage box.

[0027] Preferably, the feeding mechanism includes:

[0028] Second slideway, the second slideway is arranged outside the first partition board, and a sliding member is slidably connected inside the second slideway;

[0029] Sixth push rod, the sixth push rod is installed outside the sliding member, a seventh push rod is installed at the bottom of the sixth push rod, a feeding frame is connected to the bottom of the seventh push rod, and a clamping component is arranged inside the feeding frame;

[0030] Channel, the channel is opened inside the first partition board.

[0031] Preferably, the clamping component includes:

[0032] Round grooves, the round grooves are opened inside the feeding frame, a plurality of round grooves are opened and are evenly arranged;

[0033] Through grooves, the through grooves are opened inside the feeding frame;

[0034] Grooves, the grooves are opened inside the feeding frame, an eighth push rod is installed inside the grooves, and an annular plate is installed outside the eighth push rod;

[0035] Second chute, the second chute is opened on the side surface of the feeding frame, a second slider is slidably connected inside the second chute, and a connecting rod is installed outside the second slider.

[0036] Preferably, the support component includes:

[0037] First chute, the first chute is opened on the side surface of the feeding frame, and a clamping block is installed outside the feeding frame;

[0038] Moving plate, the moving plate is slidably connected inside the first chute, and a dial rod is installed at the top of the moving plate.

[0039] The present invention provides a chain-type silicon wafer PSG layer removing device. It has the following beneficial effects:

[0040] 1. For this chain-type silicon wafer PSG layer removing device, by setting the feeding mechanism, the clamping component and the support component, the position of the silicon wafer is fixed and the position where the silicon wafer is located is controlled. By opening a plurality of round grooves in the feeding frame, the PSG layer removal work can be carried out on a plurality of silicon wafers simultaneously. By setting a movable moving plate, it plays a role in supporting the silicon wafer to avoid the situation that the silicon wafer drops or tilts during fixation. By symmetrically setting the annular plates and sleeving a water-proof film outside the annular plates, it is convenient to protect the upper surface of the silicon wafer to avoid the liquid flowing upward from the round grooves, resulting in the corrosion of the upper surface of the silicon wafer. And by setting a movable second slider and a connecting rod, the liquid flow in the feeding frame is promoted, thereby promoting the contact between the liquid and the lower surface of the silicon wafer.

[0041] 2. The chain-type silicon wafer PSG layer removing device completes the work of removing the PSG layer of the silicon wafer in three working chambers and a fixed box by setting a removing mechanism and a moving component, reducing the mixing of liquids in multiple processes. By setting the moving component, it is convenient to clamp and drive the feeding frame to move, so that the feeding frame is respectively located in the three working chambers and a fixed box to complete the work of removing the PSG layer. A deformable joint is set on the bottom plate, which is convenient to control the bottom plate and the feeding frame to be in an inclined state, facilitating the separation of the feeding frame from the suction strip outside the push plate. At the same time, during the drying process, the strokes of the third push rod and the fourth push rod can be adjusted alternately to deflect the feeding frame and promote the feeding frame to shake off water.

[0042] 3. The chain-type silicon wafer PSG layer removing device is provided with a spraying mechanism to facilitate the spraying treatment of two chambers. In the work of removing the PSG layer, a water film is formed on the upper surface of the silicon wafer and the spraying mechanism is required during the process of cleaning the silicon wafer. Therefore, a spraying mechanism that can slide and lift is set to facilitate the spraying treatment of the silicon wafer in two processes.

[0043] 4. The chain-type silicon wafer PSG layer removing device removes the PSG layer of the silicon wafer by setting a feeding mechanism, a removing mechanism and a spraying mechanism. In the process of transporting the silicon wafer by the existing device, the silicon wafer is driven by rollers, which easily causes a large amount of corrosive liquid to contaminate the upper surface of the silicon wafer, resulting in damage to the upper surface of the silicon wafer. Therefore, a feeding mechanism, a removing mechanism and a spraying mechanism are set. The feeding frame is used to fix the position of the silicon wafer, and the upper surface and the lower surface of the silicon wafer are separated, so that the upper surface of the silicon wafer is away from the liquid and the lower surface of the silicon wafer is in the liquid. Driven by the removing mechanism, the silicon wafer is controlled to be successively located in three working chambers and a fixed box, thereby completing the work of removing the PSG layer. Description of the Drawings

[0044] Figure 1 It is a schematic diagram of the overall structure of the present invention;

[0045] Figure 2 It is a schematic side view structure of the present invention;

[0046] Figure 3 It is a schematic diagram of the structure of the removing mechanism of the present invention;

[0047] Figure 4 It is a schematic side view structure of the removing mechanism of the present invention;

[0048] Figure 5 It is a schematic diagram of the structure of the moving component of the present invention;

[0049] Figure 6 It is a schematic diagram of the structure of the spraying mechanism of the present invention;

[0050] Figure 7Schematic diagram of the feeding mechanism of the present invention;

[0051] Figure 8 Schematic diagram of the clamping component of the present invention;

[0052] Figure 9 For the present invention Figure 8 Schematic diagram of the structure at position A in;

[0053] Figure 10 Schematic diagram of the internal structure of the feeding frame of the present invention;

[0054] Figure 11 For the present invention Figure 10 Schematic diagram of the structure at position B in.

[0055] In the figure: 1, body; 2, first chamber; 3, second chamber; 4, first partition; 5, removing mechanism; 501, box body; 502, circulation pipeline; 503, overflow pipeline; 504, fixed box; 505, first slideway; 506, first connecting plate; 507, moving component; 5071, second push rod; 5072, adjusting column; 5073, second connecting plate; 5074, third push rod; 5075, fourth push rod; 5076, bottom plate; 5077, clamping clip; 5078, joint; 6, spraying mechanism; 601, first slider; 602, fifth push rod; 603, storage box; 604, spray pipe; 7, feeding mechanism; 701, second slideway; 702, sliding part; 703, sixth push rod; 704, seventh push rod; 705, feeding frame; 706, clamping component; 7061, circular groove; 7062, through groove; 7063, groove; 7064, eighth push rod; 7065, annular plate; 7066, second chute; 7067, second slider; 7068, connecting rod; 707, channel; 708, supporting component; 7081, first chute; 7082, clamping block; 7083, moving plate; 7084, lever; 8, fixed groove; 9, first push rod; 10, push plate; 11, feeding window. Detailed implementation manners

[0056] The present invention will be further described in detail below in conjunction with the drawings and specific implementation manners. The embodiments of the present invention are given for purposes of illustration and description, and are not exhaustive or limit the present invention to the disclosed form. Many modifications and variations are obvious to those of ordinary skill in the art. The embodiments are selected and described to better illustrate the principles and practical applications of the present invention, and enable those of ordinary skill in the art to understand the present invention and thus design various embodiments with various modifications suitable for specific purposes.

[0057] As Figures 1-11As shown in the figure, the present invention provides a technical solution, which includes a body 1. Inside the body 1, a first chamber 2, a second chamber 3 and a feeding window 11 are provided. The feeding window 11 is communicated with the first chamber 2. Transparent door panels are arranged outside both the first chamber 2 and the second chamber 3. Inside the body 1, two circulating water tanks, a circulating liquid tank and a waste liquid tank are provided. The circulating liquid tank is used to hold the etching solution;

[0058] A first partition 4, and the first partition 4 is installed inside the body 1;

[0059] A removing mechanism 5, and the removing mechanism 5 is arranged outside the first partition 4. The removing mechanism 5 includes a box body 501. The box body 501 is installed outside the first partition 4. Inside the box body 501, a working chamber is provided. There are three working chambers, and the three working chambers are respectively used for cleaning the silicon wafer to form a water film, removing the PDG layer and cleaning the silicon wafer;

[0060] A feeding mechanism 7, and the feeding mechanism 7 is arranged outside the first partition 4. The feeding mechanism 7 includes a clamping component 706 and a supporting component 708. The clamping component 706 and the supporting component 708 are used to surround the silicon wafer and control the upper and lower surfaces of the silicon wafer to be separated inside and outside the liquid;

[0061] A fixing groove 8, and the fixing groove 8 is opened inside the body 1. A first push rod 9 is installed inside the fixing groove 8. A push plate 10 is installed outside the first push rod 9. A suction strip is installed outside the push plate 10;

[0062] [[ID=1S]]A spraying mechanism 6, and the spraying mechanism 6 is connected to the removing mechanism 5.

[0063] Before using the equipment, manually place the silicon wafer into the feeding mechanism 7 through the feeding window 11. Then adjust the position of the feeding mechanism 7 and cooperate with adjusting the stroke of the first push rod 9 to make the silicon wafer gradually enter the second chamber 3 through the first chamber 2. Adjust the removing mechanism 5 and the spraying mechanism 6 to perform the work of removing the PSG layer on the silicon wafer. After the work is completed, manually disassemble the silicon wafer.

[0064] The feeding mechanism 7 includes:

[0065] A second slideway 701, and the second slideway 701 is arranged outside the first partition 4. A sliding member 702 is slidably connected inside the second slideway 701. A first power system is arranged inside the sliding member 702;

[0066] A sixth push rod 703, and the sixth push rod 703 is installed outside the sliding member 702. A seventh push rod 704 is installed at the bottom of the sixth push rod 703. The bottom of the seventh push rod 704 is connected to a feeding frame 705. The clamping component 706 is arranged inside the feeding frame 705;

[0067] A channel 707, and the channel 707 is opened inside the first partition 4.

[0068] Before using the device, turn on the first power system in the slider 702. The slider 702 moves downward inside the second slideway 701 until the feeding frame 705 is at the feeding window 11, and then manually place the silicon wafer into the positioning component 706.

[0069] Subsequently, turn on the seventh push rod 704 to its maximum stroke. The seventh push rod 704 drives the feeding frame 705 to move downward. Turn on the first push rod 9. The first push rod 9 drives the push plate 10 to move towards the feeding frame 705 until the suction strip outside the push plate 10 is suction-fixed to the feeding frame 705. Adjust the seventh push rod 704 to its initial state. The seventh push rod 704 gradually separates from the feeding frame 705. At this time, another feeding frame 705 can be manually installed at the bottom of the seventh push rod 704.

[0070] Adjust the first push rod 9 to its maximum stroke. The first push rod 9 drives the feeding frame 705 through the channel 707. The feeding frame 705 is gradually clamped into the removing mechanism 5. Adjust the removing mechanism 5 to perform the PSG layer removing treatment on the lower surface of the silicon wafer.

[0071] The positioning component 706 includes:

[0072] Round grooves 7061 are opened inside the feeding frame 705. There are multiple round grooves 7061, and they are evenly arranged.

[0073] Through grooves 7062 are opened inside the feeding frame 705.

[0074] Grooves 7063 are opened inside the feeding frame 705. An eighth push rod 7064 is installed inside the groove 7063. An annular plate 7065 is installed outside the eighth push rod 7064. There are multiple groups of the eighth push rod 7064 and the annular plate 7065. Each group has two eighth push rods 7064 and two annular plates 7065. The two eighth push rods 7064 and the two annular plates 7065 in each group are symmetrically arranged. A water-proof film is sleeved outside the annular plate 7065.

[0075] Second slideways 7066 are opened on the side of the feeding frame 705. A second slider 7067 is slidably connected inside the second slideway 7066. The second slider 7067 slides in the second slideway 7066 through a telescopic rod. The telescopic rod is installed inside the second slideway 7066. A connecting rod 7068 is installed outside the second slider 7067. The connecting rod 7068 is a welded part of a cylindrical rod and two inclined rods. There are two second sliders 7067, and the two second sliders 7067 are connected by an adjusting rod.

[0076] The support component 708 includes:

[0077] The first chute 7081 is provided on the side of the feed frame 705. A positioning block 7082 is installed on the outside of the feed frame 705. The positioning block 7082 is made of rubber.

[0078] The movable plate 7083 is slidably connected to the inside of the first sliding groove 7081 , and a shifting rod 7084 is installed on the top of the movable plate 7083 .

[0079] Before placing the silicon wafer, manually move the lever 7084, which drives the movable plate 7083 to move. The movable plate 7083 squeezes the rubber blocking block 7082 until the movable plate 7083 is at the bottom of the circular groove 7061. Manually place the silicon wafer in the circular groove 7061. At this time, the bottom of the silicon wafer contacts the upper surface of the movable plate 7083, and at the same time, multiple groups of eighth push rods 7064 are opened. The eighth push rods 7064 drive the annular plate 7065 to move toward the direction close to the silicon wafer until the annular plate 7065 fixes the position of the silicon wafer.

[0080] The lever 7084 is manually toggled, and the lever 7084 drives the movable plate 7083 to return to its original position. At this time, the movable plate 7083 is at a position away from the silicon wafer.

[0081] As the removal mechanism 5 drives the feed frame 705 into the working chamber, the lower surface of the silicon wafer is immersed in the liquid, and the upper surface of the silicon wafer is above the liquid. The telescopic rod is opened, and the telescopic rod drives the second slider 7067 to reciprocate within the second chute 7066. The second slider 7067 drives the connecting rod 7068 to move, promoting the flow of liquid in the feed frame 705 and promoting contact between the liquid and the lower surface of the silicon wafer.

[0082] By setting the feeding mechanism 7, the positioning assembly 706 and the supporting assembly 708, the position of the silicon wafer is fixed and the position of the silicon wafer is controlled. By providing multiple circular grooves 7061 in the feeding frame 705, the PSG layer of multiple silicon wafers can be removed at the same time. By providing a movable movable plate 7083, a supporting effect is played on the silicon wafer to prevent the silicon wafer from falling or tilting when fixed. By symmetrically arranging the annular plates 7065 and arranging a water-proof membrane on the outer surface of the annular plates 7065, it is convenient to protect the upper surface of the silicon wafer and prevent the liquid from flowing upward from the circular grooves 7061, causing the upper surface of the silicon wafer to be corroded. A movable second slider 7067 and a connecting rod 7068 are provided to promote the flow of liquid in the feeding frame 705, thereby promoting the contact between the liquid and the lower surface of the silicon wafer.

[0083] The removal mechanism 5 also includes:

[0084] The circulation pipeline 502 is connected to the outside of the box body 501. The circulation pipeline 502 communicates with the body 1. There are multiple circulation pipelines 502. The circulation pipeline 502 connected to the working chamber close to the first chamber 2 is connected to the circulation water tank. The circulation pipeline 502 connected to the middle working chamber is connected to the circulation liquid tank. The circulation pipeline 502 connected to the working chamber far from the first chamber 2 is connected to the circulation water tank;

[0085] The overflow pipeline 503 is connected to the outside of the box body 501. The overflow pipeline 503 communicates with the body 1. There are multiple overflow pipelines 503. The overflow pipeline 503 is connected to the waste liquid tank;

[0086] The fixed box 504 is installed on the top of the box body 501. A fan is arranged inside the fixed box 504;

[0087] The first slideway 505 is arranged outside the first partition plate 4. The first slideway 505 is connected to the spraying mechanism 6;

[0088] The first connecting plate 506 is installed outside the first partition plate 4. A moving component 507 is installed outside the first connecting plate 506.

[0089] Before using the equipment, turn on the circulation water tank and the circulation liquid tank. The water in the circulation water tank gradually enters the two working chambers through the circulation pipeline 502. The corrosive liquid in the circulation liquid tank enters the middle working chamber through the circulation pipeline 502.

[0090] Driven by the moving component 507, the silicon wafer successively enters the three working chambers, completing the cleaning, water film covering, PSG layer removal and cleaning work of the silicon wafer. Subsequently, the silicon wafer is in the fixed box 504, and the fan is turned on to promote the drying work of the silicon wafer.

[0091] The moving component 507 includes:

[0092] The second push rod 5071 is installed outside the first connecting plate 506. An adjusting column 5072 is installed at the bottom of the second push rod 5071;

[0093] The second connecting plate 5073 is installed at the bottom of the adjusting column 5072. A third push rod 5074 and a fourth push rod 5075 are installed at the bottom of the second connecting plate 5073;

[0094] There are two connectors 5078. The connectors 5078 are made of rubber. The two connectors 5078 are respectively installed at the bottoms of the third push rod 5074 and the fourth push rod 5075;

[0095] The bottom plate 5076 is connected to the joint 5078. There are two clamping clips 5077 installed outside the bottom plate 5076, and they are symmetrically arranged. The clamping clips 5077 are made of magnetic materials.

[0096] Before using the device, adjust the second push rod 5071 to its initial state. At the same time, turn on the third push rod 5074 and the fourth push rod 5075. The third push rod 5074 and the fourth push rod 5075 drive the bottom plate 5076 and the two clamping clips 5077 to move downward. As the push plate 10 pushes the feeding frame 705, the feeding frame 705 gradually gets stuck in the clamping clips 5077. Adjust the stroke of the third push rod 5074. The third push rod 5074 drives the joint 5078 to deform. At this time, one side of the bottom plate 5076 connected to the third push rod 5074 starts to deflect upward, thereby driving the feeding frame 705 to deflect and promoting the separation of the feeding frame 705 from the suction strip outside the push plate 10. Adjust the first push rod 9 to its initial state. Then, adjust the stroke of the third push rod 5074 to make the bottom plate 5076 and the feeding frame 705 in a horizontal state.

[0097] Adjust the strokes of the second push rod 5071, the third push rod 5074, and the fourth push rod 5075 so that the feeding frame 705 enters the three working chambers in sequence.

[0098] When the feeding frame 705 enters the working chamber close to the channel 707, turn on the spraying mechanism 6 to form a water film on the upper surface of the silicon wafer.

[0099] When the feeding frame 705 enters the middle working chamber, the etching solution starts to remove the PSG layer on the lower surface of the silicon wafer.

[0100] When the feeding frame 705 enters the working chamber far from the channel 707, turn on the spraying mechanism 6 to rinse the silicon wafer, and the liquid in the working chamber soaks the lower surface of the silicon wafer.

[0101] By setting the removing mechanism 5 and the moving component 507, the work of removing the PSG layer of the silicon wafer is completed in three working chambers and a fixed box 504, reducing the mixing of liquids in multiple processes. By setting the moving component 507, it is convenient to clamp and drive the feeding frame 705 to move, so that the feeding frame 705 is respectively in three working chambers and a fixed box 504 to complete the work of removing the PSG layer. A deformable joint 5078 is set on the bottom plate 5076, which is convenient to control the bottom plate 5076 and the feeding frame 705 to be in an inclined state, facilitating the separation of the feeding frame 705 from the suction strip outside the push plate 10. At the same time, during the drying process, the strokes of the third push rod 5074 and the fourth push rod 5075 can be adjusted alternately to make the feeding frame 705 deflect and promote the feeding frame 705 to shake off the moisture.

[0102] The spraying mechanism 6 includes:

[0103] A first slider 601 is slidably connected to the inside of the first slideway 505. A fifth push rod 602 is installed at the bottom of the first slider 601. A second power system is provided inside the first slider 601.

[0104] The storage box 603 is installed at the bottom of the fifth push rod 602. A spray pipe 604 is installed at the bottom of the storage box 603, and a plurality of spray pipes 604 are provided.

[0105] Based on the spraying position, the second power system in the first slider 601 is adjusted to position the spray mechanism 6 directly above the corresponding working chamber. The fifth push rod 602 is activated, driving the storage box 603 and the spray pipe 604 downward, opening the spray pipe 604, which begins spraying the upper surface of the silicon wafer.

[0106] The provision of a spray mechanism 6 facilitates spraying of both chambers. This mechanism is required for both the removal of the PSG layer, the formation of a water film on the silicon wafer surface, and the cleaning of the silicon wafer. Therefore, a slidable and elevating spray mechanism 6 is provided to facilitate spraying of the silicon wafer during both steps.

[0107] Working principle: Before using the equipment, open the circulating water tank and the circulating liquid tank. The water in the circulating water tank gradually enters the two working chambers through the circulating pipe 502, and the corrosive liquid in the circulating liquid tank enters the working chamber in the middle through the circulating pipe 502.

[0108] Then, the first power system in the slide 702 is started, and the slide 702 moves downward inside the second slide 701 until the feed frame 705 is at the feed window 11, and the silicon wafer is manually placed in the clamping assembly 706.

[0109] Before placing the silicon wafer, manually move the lever 7084, which drives the movable plate 7083 to move. The movable plate 7083 squeezes the rubber blocking block 7082 until the movable plate 7083 is at the bottom of the circular groove 7061. Manually place the silicon wafer in the circular groove 7061. At this time, the bottom of the silicon wafer contacts the upper surface of the movable plate 7083, and at the same time, multiple groups of eighth push rods 7064 are opened. The eighth push rods 7064 drive the annular plate 7065 to move toward the direction close to the silicon wafer until the annular plate 7065 fixes the position of the silicon wafer.

[0110] The lever 7084 is manually toggled, and the lever 7084 drives the movable plate 7083 to return to its original position. At this time, the movable plate 7083 is at a position away from the silicon wafer.

[0111] Open the seventh push rod 704 to its maximum stroke. The seventh push rod 704 drives the feeding frame 705 to move downward. Open the first push rod 9. The first push rod 9 drives the push plate 10 to move in the direction of the feeding frame 705 until the suction strip outside the push plate 10 is suction-fixed to the feeding frame 705. Adjust the seventh push rod 704 to its initial state. The seventh push rod 704 gradually separates from the feeding frame 705. At this time, another feeding frame 705 can be manually installed at the bottom of the seventh push rod 704.

[0112] Adjust the first push rod 9 to its maximum stroke. The first push rod 9 drives the feeding frame 705 through the channel 707. The feeding frame 705 gradually snaps into the removal mechanism 5. Adjust the removal mechanism 5 to perform the PSG layer removal treatment on the lower surface of the silicon wafer.

[0113] Adjust the removal mechanism 5 and the spraying mechanism 6 to perform the PSG layer removal work on the silicon wafer. Before using the equipment, adjust the second push rod 5071 to its initial state. At the same time, turn on the third push rod 5074 and the fourth push rod 5075. The third push rod 5074 and the fourth push rod 5075 drive the bottom plate 5076 and the two clamping clips 5077 to move downward. As the push plate 10 pushes the feeding frame 705, the feeding frame 705 gradually snaps into the clamping clip 5077. Adjust the stroke of the third push rod 5074. The third push rod 5074 drives the joint 5078 to deform. At this time, one side of the bottom plate 5076 connected to the third push rod 5074 starts to deflect upward, thereby driving the feeding frame 705 to deflect and promoting the separation of the feeding frame 705 from the suction strip outside the push plate 10. Adjust the first push rod 9 to its initial state. Then adjust the stroke of the third push rod 5074 to make the bottom plate 5076 and the feeding frame 705 in a horizontal state.

[0114] Adjust the strokes of the second push rod 5071, the third push rod 5074, and the fourth push rod 5075 so that the feeding frame 705 enters the three working chambers in sequence.

[0115] When the feeding frame 705 enters the working chamber close to the channel 707, the lower surface of the silicon wafer is in the liquid, and the upper surface of the silicon wafer is above the liquid. Turn on the telescopic rod. The telescopic rod drives the second slider 7067 to reciprocate in the second chute 7066. The second slider 7067 drives the connecting rod 7068 to move, promoting the flow of the liquid in the feeding frame 705 and promoting the contact between the liquid and the lower surface of the silicon wafer. Turn on the spraying mechanism 6 to form a water film on the upper surface of the silicon wafer.

[0116] According to the spraying position, adjust the second power system in the first slider 601 so that the spraying mechanism 6 is directly above the corresponding working chamber. Turn on the fifth push rod 602. The fifth push rod 602 drives the storage tank 603 and the spray pipe 604 to move downward. Turn on the spray pipe 604. The spray pipe 604 starts to spray the upper surface of the silicon wafer.

[0117] When the feed frame 705 enters the middle working chamber, the etching solution starts to remove the PSG layer on the lower surface of the silicon wafer.

[0118] When the feed frame 705 enters the working chamber far from the channel 707, the spraying mechanism 6 is turned on to rinse the silicon wafer, and the liquid in the working chamber soaks the lower surface of the silicon wafer.

[0119] Subsequently, the silicon wafer is placed in the fixing box 504, and the fan is turned on to facilitate the drying of the silicon wafer. After the drying operation, the user manually opens the transparent door panel, takes out the feed frame 705, and manually disassembles the silicon wafer.

[0120] Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of them. All other embodiments obtained by those of ordinary skill in the art and related fields based on the embodiments of the present invention without creative efforts shall fall within the scope of protection of the present invention. The structures, devices, and operation methods not specifically described and explained in the present invention, unless otherwise specified and limited, are implemented according to the conventional means in the art.

Claims

1. A chain-type silicon wafer PSG layer removing device, comprising a machine body (1), characterized in that: A first chamber (2) and a second chamber (3) are provided inside the machine body (1); A first partition board (4), and the first partition board (4) is installed inside the machine body (1); A removing mechanism (5), the removing mechanism (5) is arranged outside the first partition board (4), the removing mechanism (5) includes a box body (501), a working chamber is provided inside the box body (501), and the box body (501) is installed outside the first partition board (4); A feeding mechanism (7), the feeding mechanism (7) is arranged outside the first partition board (4), the feeding mechanism (7) includes a clamping component (706) and a supporting component (708), and the clamping component (706) and the supporting component (708) are used for surrounding the silicon wafer and controlling the upper and lower surfaces of the silicon wafer to be separated inside and outside the liquid.

2. The chain-type silicon wafer PSG layer removing device according to claim 1, wherein: It further includes: A fixing groove (8), the fixing groove (8) is provided inside the machine body (1), a first push rod (9) is installed inside the fixing groove (8), and a push plate (10) is installed outside the first push rod (9); A spraying mechanism (6), and the spraying mechanism (6) is connected to the removing mechanism (5); A feeding window (11), and the feeding window (11) is provided inside the machine body (1).

3. The chain-type silicon wafer PSG layer removing device according to claim 1, wherein: The removing mechanism (5) further includes: Circulation pipelines (502), the circulation pipelines (502) are connected to the outside of the box body (501), the circulation pipelines (502) are communicated with the machine body (1), and a plurality of circulation pipelines (502) are provided; Overflow pipelines (503), the overflow pipelines (503) are connected to the outside of the box body (501), the overflow pipelines (503) are communicated with the machine body (1), and a plurality of overflow pipelines (503) are provided.

4. The chain-type silicon wafer PSG layer removing device according to claim 3, wherein: The removing mechanism (5) further includes: A fixing box (504), the fixing box (504) is installed on the top of the box body (501), and a fan is arranged inside the fixing box (504); A first slideway (505), the first slideway (505) is arranged outside the first partition board (4), and the first slideway (505) is connected to the spraying mechanism (6); A first connecting plate (506), the first connecting plate (506) is installed outside the first partition board (4), and a moving component (507) is installed outside the first connecting plate (506).

5. The chain-type silicon wafer PSG layer removing device according to claim 4, wherein: The moving component (507) includes: A second push rod (5071), the second push rod (5071) is installed outside the first connecting plate (506), and an adjusting column (5072) is installed at the bottom of the second push rod (5071); Second connecting plate (5073), the second connecting plate (5073) is installed at the bottom of the adjusting column (5072), and a third push rod (5074) and a fourth push rod (5075) are installed at the bottom of the second connecting plate (5073); Joints (5078), there are two joints (5078), and the two joints (5078) are respectively installed at the bottoms of the third push rod (5074) and the fourth push rod (5075); Bottom plate (5076), the bottom plate (5076) is connected to the joint (5078), a clamping clip (5077) is installed outside the bottom plate (5076), there are two clamping clips (5077), and they are symmetrically arranged, and the clamping clip (5077) is made of magnetic material.

6. The chain-type silicon wafer PSG layer removing device according to claim 4, wherein: The spraying mechanism (6) includes: First slider (601), the first slider (601) is slidably connected inside the first slideway (505), and a fifth push rod (602) is installed at the bottom of the first slider (601); Storage box (603), the storage box (603) is installed at the bottom of the fifth push rod (602), and a spraying pipe (604) is installed at the bottom of the storage box (603), and a plurality of spraying pipes (604) are provided.

7. The chain-type silicon wafer PSG layer removing device according to claim 1, wherein: The feeding mechanism (7) includes: Second slideway (701), the second slideway (701) is arranged outside the first partition plate (4), and a sliding member (702) is slidably connected inside the second slideway (701); Sixth push rod (703), the sixth push rod (703) is installed outside the sliding member (702), a seventh push rod (704) is installed at the bottom of the sixth push rod (703), and the bottom of the seventh push rod (704) is connected to a feeding frame (705), and a clamping component (706) is arranged inside the feeding frame (705); Channel (707), the channel (707) is opened inside the first partition plate (4).

8. The chain-type silicon wafer PSG layer removing device according to claim 1, wherein: The clamping component (706) includes: Round grooves (7061), the round grooves (7061) are opened inside the feeding frame (705), there are a plurality of round grooves (7061), and they are evenly arranged; Through grooves (7062), the through grooves (7062) are opened inside the feeding frame (705); Grooves (7063), the grooves (7063) are opened inside the feeding frame (705), an eighth push rod (7064) is installed inside the grooves (7063), and an annular plate (7065) is installed outside the eighth push rod (7064); The second sliding groove (7066) is opened on the side surface of the feeding frame (705). A second sliding block (7067) is slidably connected inside the second sliding groove (7066), and a connecting rod (7068) is installed outside the second sliding block (7067).

9. The chain-type silicon wafer PSG layer removing device according to claim 8, wherein: The support assembly (708) includes: The first sliding groove (7081) is opened on the side surface of the feeding frame (705), and a clamping block (7082) is installed outside the feeding frame (705); The moving plate (7083) is slidably connected inside the first sliding groove (7081), and a dial rod (7084) is installed on the top of the moving plate (7083).

Images