Micro-LED with wavefront regulation and control function and preparation method thereof

Abstract

The invention provides a Micro-LED with a wavefront regulation and control function and a preparation method of the Micro-LED. According to the method, the advantage of self-assembly of the nanospheres under the action of Van der Waals' force is utilized, the assembled nanospheres are transferred to the surface of the Micro-LED through a wet method, and the size of the assembled nanospheres is controlled through a dry etching technology; and then, the nanospheres are used as a mask, a refined surface microstructure is etched on the surface of the Micro-LED, the nanospheres are removed, and therefore preparation of the Micro-LED fine surface microstructure is achieved. The method provided by the invention can effectively avoid the traditional photoetching process and the material loss caused by the photoetching process, and brings about the potential of cost reduction and batch production. The Micro-LED disclosed by the invention has a wavefront regulation and control function, and can change the emergent angle of light, so that the light extraction efficiency of the Micro-LED is greatly improved, and the purpose of regulating and controlling a light field is achieved.

Description

Technical Field

[0001] The present invention relates to the technical field of Micro-LED, and in particular to a Micro-LED with wavefront modulation function and a preparation method thereof. Background Art

[0002] Entering the 21st century, AR and VR technologies have developed vigorously, and people's demands for fields such as lighting, display, and communication are increasing day by day. Micro-LED has triggered a research wave in scientific research institutions and high-tech enterprises worldwide with its many advantages such as high brightness, high density, high efficiency, and high reliability. Micro-LED (micro light-emitting diode) is a new display technology and is considered the core direction of the next-generation display technology after LCD (liquid crystal display) and OLED (organic light-emitting diode). Its core lies in reducing the size of traditional LED devices to the micron level (usually less than 100 microns) and using tiny LED chips with high-density integration as pixel units to achieve a self-luminous display effect. After the light of the Micro-LED chip emits from the light source region, during the process of escaping to the outside world, it needs to undergo refraction and total reflection of the epitaxial structure. Due to the different refractive indices and reflectivities of the materials between the layers, most of the light is trapped inside the Micro-LED chip during the escape process and is converted into heat, reducing the efficiency and reliability of the Micro-LED. Currently, wet etching is mostly used in the market to roughen the surface to improve the light extraction efficiency. However, this method will cause damage to the Micro-LED chip itself, and with the development of science and technology, more stringent requirements for the beam angle of Micro-LED are put forward in some specific scenarios, and it is required to control the emission angle and beam quality, etc. Therefore, the method of wet etching cannot meet the requirements of multi-scenario applications of Micro-LED.

[0003] By introducing surface metasurfaces into Micro-LED, the emission angle of light can be changed, which can not only increase the light extraction efficiency but also realize the function of wavefront modulation of Micro-LED, and is regarded as a new type of light field modulation means. The realization of traditional Micro-LED surface metasurfaces requires the assistance of lithography technology. Not only large-scale equipment such as lithography machines is needed, but the photoresist used in the preparation process also has very strict environmental requirements. Therefore, the large-scale preparation of surface metasurfaces brings high costs, thus restricting its further development. If further control of the light beam is to be realized, more refined surface metasurface design and processing are required, and generally, it is required that this surface metasurface be smaller than the emission wavelength of the Micro-LED. Currently, to realize such a refined Micro-LED surface metasurface, an EUV lithography machine is needed, which is costly and cannot be prepared in large quantities.

[0004] Therefore, there is a need for a Micro-LED with wavefront control function and a method for efficiently fabricating a metasurface on the Micro-LED surface at low cost. Summary of the Invention

[0005] Aiming at the deficiencies of the existing technology, the present invention provides a Micro-LED with wavefront control function and a manufacturing method thereof. The method of the present invention utilizes the advantages of self-assembly of nanospheres under the action of van der Waals force, transfers the assembled nanospheres to the Micro-LED surface by wet transfer, and controls the size of the assembled nanospheres by dry etching technology; then uses the above-mentioned nanospheres as a mask to etch fine surface microstructures on the Micro-LED surface and removes the nanospheres, thereby realizing the preparation of fine surface microstructures of Micro-LED. The method of the present invention can effectively avoid the traditional lithography process and the material loss caused by the lithography process, bringing cost reduction and the potential for batch production. The Micro-LED of the present invention has a wavefront control function, can change the light emission angle so as to greatly increase the light extraction efficiency of the Micro-LED, achieve the purpose of light field control, and meet the application of Micro-LED under certain specific sizes.

[0006] The technical solution of the present invention is as follows: A Micro-LED with wavefront control function, characterized in that the surface of the indium tin oxide transparent conductive layer has fine microstructures, and the fine microstructures are an array structure composed of cylindrical protrusions, and the height of the cylindrical protrusions is less than the thickness of the indium tin oxide transparent conductive layer.

[0007] According to the preference of the present invention, the height of the cylindrical protrusions is 5-30 nm, the diameter is 300-800 nm, and the spacing between adjacent cylindrical protrusions is 50-200 nm.

[0008] According to the preference of the present invention, the fine microstructures are an array structure composed of cylindrical protrusions with at least two diameters.

[0009] According to the preference of the present invention, the Micro-LED sequentially includes from bottom to top: a sapphire substrate layer, a U-shaped GaN layer, an N-type GaN layer, a multi-quantum well layer, a P-type GaN layer, and an indium tin oxide transparent conductive layer; wherein the multi-quantum well layer, the P-type GaN layer, and the indium tin oxide transparent conductive layer form a light-emitting platform and are arranged at the middle position on the upper surface of the N-type GaN layer; silicon dioxide layers are arranged on both side walls of the light-emitting platform and are in contact with the upper surface of the indium tin oxide transparent conductive layer and the upper surface of the N-type GaN layer; an electrode is arranged on the surface of the silicon dioxide layer on one side of the light-emitting platform and is in contact with the upper surface of the indium tin oxide transparent conductive layer, and an electrode is arranged on the upper surface of the N-type GaN layer on the other side of the light-emitting platform.

[0010] Preferably, the thickness of the sapphire substrate layer is 600 - 650 μm; the thickness of the U-shaped GaN layer is 3 - 4 μm; the thickness of the N-type GaN layer is 105 - 200 nm, the doping element is Si, and the doping concentration is 4×E18 - 6×E18; the material of the multi-quantum well layer is a superlattice periodic structure in which GaN layers and InGaN layers are alternately arranged. The thickness of a single GaN layer is 20 - 30 nm, the thickness of a single InGaN layer is 20 - 30 nm. An adjacent GaN layer and InGaN layer form a period, and there are 14 - 18 periods in total. The emission wavelength of the multi-quantum well layer is 350 - 470 nm; the thickness of the P-type GaN layer is 105 - 200 nm, the doping element is Mg, and the doping concentration is 9×E19 - 2×E20; the thickness of the indium tin oxide transparent conductive layer is 60 - 80 nm; the thickness of the silicon dioxide layer is 200 - 350 nm; the material of the electrode is a Ti / Au composite electrode, and the thickness is 10 - 20 / 250 - 350 nm.

[0011] The preparation method of the above Micro-LED with wavefront control function includes the steps: Fully disperse the nanospheres in a mixed solvent of deionized water and ethanol, then drop them into ultrapure water, and the nanospheres self-assemble on the surface of the solution under the action of van der Waals force; use the dip-coating method to transfer the nanospheres to the upper surface of the indium tin oxide transparent conductive layer; use reactive ion etching technology (RIE) to control the size and space separation of the nanospheres; then use inductively coupled plasma etching technology (ICP) to etch with the above nanospheres as a mask to remove the nanospheres, and prepare a Micro-LED with wavefront control function.

[0012] According to the preference of the present invention, the preparation method of the Micro-LED further includes: processing the GaN-based LED epitaxial wafer to form a light-emitting platform, a silicon dioxide layer, and an electrode; the epitaxial wafer sequentially includes a sapphire substrate layer, a U-shaped GaN layer, an N-type GaN layer, a multi-quantum well layer, a P-type GaN layer, and an indium tin oxide transparent conductive layer from bottom to top; According to the present invention, the method for processing the GaN-based LED epitaxial wafer to form a light-emitting platform, a silicon dioxide layer, and an electrode can be carried out according to the prior art. Preferably, the method for processing the GaN-based LED epitaxial wafer to form a light-emitting platform, a silicon dioxide layer, and an electrode is as follows: i. Use photolithography technology to perform photolithography on the indium tin oxide transparent conductive layer, and use photoresist as the mask material. After development, remove the mask material at both ends of the upper surface of the indium tin oxide transparent conductive layer to obtain a non-mask area, and use ICP to etch the non-mask area to etch out the light-emitting platform, and then strip the mask material; ii. Apply photoresist on the middle position of the upper surface of the light-emitting platform and the upper surface of the N-type GaN layer, perform photolithography, grow a silicon dioxide layer to cover the side walls of the light-emitting platform surface, and remove the photoresist; iii. Apply photoresist on the silicon dioxide layer, the N-type GaN layer, and the surface of the indium tin oxide transparent conductive layer, perform photolithography to expose the electrode window, grow electrode materials using magnetron sputtering or evaporation processes, and remove the photoresist.

[0013] Preferably according to the present invention, the nano-microsphere material is silicon dioxide or polystyrene, and the diameter of the nano-microspheres is 300 - 500 nm.

[0014] Preferably according to the present invention, the volume ratio of deionized water : ethanol : nano-microspheres is 6 - 8 : 2 - 4 : 3 - 5. The mixed solution of deionized water and ethanol with nano-microspheres needs to be dispersed by ultrasonic for 1 hour to make it fully dispersed.

[0015] According to the present invention, based on the design of the fine surface microstructure of the Micro-LED, the reaction ion etching technology (RIE) is used to control the size and spatially separate the nano-spheres on the surface of the Micro-LED chip.

[0016] Preferably according to the present invention, BOE solution is used to remove the nano-spheres.

[0017] The present invention has at least the following beneficial effects: 1. The traditional method to increase the light extraction efficiency of Micro-LED is to use the corrosion passivation method to passivate the surface of the Micro-LED to form an irregular rough surface for the purpose of achieving diffuse scattering, thereby increasing the light extraction efficiency of the Micro-LED. However, this method is usually a pretreatment, that is, it is carried out before the completion of the Micro-LED chip process, which will affect the subsequent Micro-LED manufacturing process and cause damage to the device; moreover, the structure of the surface obtained by corrosion passivation is uncontrollable and irregular, and the increase in light extraction efficiency is relatively low. The preparation of the fine surface microstructure of the present invention is carried out after the completion of the Micro-LED chip, which will not affect the Micro-LED manufacturing process or cause damage to the device; the obtained fine surface microstructure is controllable and regular, and can greatly improve the light extraction efficiency.

[0018] 2. The traditional method for Micro-LED to achieve light field regulation is to use EUV lithography technology to lithograph the designed pattern on the surface of the Micro-LED, with high manufacturing cost and unable to be mass-produced. The method of the present invention uses nano-spheres as an etching mask, which can effectively avoid the traditional lithography process and the material loss caused by the lithography process, bringing cost reduction and the potential for mass production.

[0019] 3. The present invention selects nanospheres with different morphologies and sizes, and self-assembles under the action of van der Waals forces. By using RIE technology to further control the size, a metasurface structure with regularly arranged patterns can be prepared on the surface of Micro-LED. The Micro-LED obtained by the method of the present invention has a wavefront modulation function, which can change the light emission angle and thus greatly increase the light extraction efficiency of Micro-LED, achieve the purpose of light field modulation, and meet the application of Micro-LED at certain specific sizes.

[0020] 4. The present invention is different from other nanosphere etching methods and the formed single surface microstructure morphology. This method completes the formation process of the surface superstructure array during the liquid surface self-assembly process of the nanospheres. By using nanospheres of different sizes to first form a mixed solution and transferring it to the liquid surface of deionized water, under the action of van der Waals forces, a microstructure array with a complex morphology is directly formed. Subsequently, it is transferred to the surface of the Micro-LED chip and combined with the etching process to form a surface superstructure array, and the generated light field modulation effect is more obvious. And this method can be extended to other application fields such as solar cells and logic devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 is the process flow chart of the Micro-LED preparation of the present invention; Among them, 101, sapphire substrate layer; 102, U-shaped GaN layer; 103, N-type GaN layer; 104, multi-quantum well layer; 105, P-type GaN layer; 106, indium tin oxide transparent conductive layer; 107, silicon dioxide layer; 108, electrode; 109, nanosphere.

[0022] Figure 2 are the spectral test data of the devices in Example 1 and Comparative Example 1.

[0023] Figure 3 are the Fourier space distribution diagrams of the light fields of the devices in Example 1 and Comparative Example 1. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0024] In order to make the purpose, technical solutions and advantages of the present invention clearer and more understandable, the following further describes the embodiments of the present invention in detail with reference to specific embodiments and the accompanying drawings.

[0025] Example 1 A Micro-LED with a wavefront modulation function, such as Figure 1As shown in S8, from bottom to top, it successively includes: a sapphire substrate layer 101, a U-shaped GaN layer 102, an N-type GaN layer 103, a multi-quantum well layer 104, a P-type GaN layer 105, and an indium tin oxide transparent conductive layer 106; among them, the multi-quantum well layer 104, the P-type GaN layer 105, and the indium tin oxide transparent conductive layer 106 form a light-emitting platform, which is arranged at the middle position on the upper surface of the N-type GaN layer 103; silicon dioxide layers 107 are arranged on the side wall surfaces of both sides of the light-emitting platform and are in contact with the upper surface of the indium tin oxide transparent conductive layer 106 and the upper surface of the N-type GaN layer 103; an electrode 108 is arranged on the surface of the silicon dioxide layer 107 on one side of the light-emitting platform and is in contact with the upper surface of the indium tin oxide transparent conductive layer 106, and an electrode 108 is arranged on the upper surface of the N-type GaN layer 103 on the other side of the light-emitting platform; the surface of the indium tin oxide transparent conductive layer 106 has a refined microstructure, and the refined microstructure is an array structure composed of cylindrical protrusions. The height of the cylindrical protrusions is less than the thickness of the indium tin oxide transparent conductive layer 106. The height of the cylindrical protrusions is 50 nm, the diameters of the cylindrical protrusions are 200 nm and 700 nm respectively, and the distance between adjacent cylindrical protrusions is 100 nm.

[0026] The thickness of the sapphire substrate layer 101 is 625 μm; the thickness of the U-shaped GaN layer 102 is 3 μm; the thickness of the N-type GaN layer 103 is 150 nm, the doping element is Si, and the doping concentration is 5×E18; the material of the multi-quantum well layer 104 is a superlattice periodic structure in which GaN layers and InGaN layers are alternately arranged. The thickness of a single GaN layer is 25 nm, the thickness of a single InGaN layer is 25 nm, and adjacent GaN layers and InGaN layers form a period, with a total of 16 periods. The emission wavelength of the multi-quantum well layer 14 is 350 - 470 nm; the thickness of the P-type GaN layer 105 is 150 nm, the doping element is Mg, and the doping concentration is 1×E20; the thickness of the indium tin oxide transparent conductive layer 106 is 70 nm; the thickness of the silicon dioxide layer 107 is 300 nm; the material of the electrode 108 is a Ti / Au composite electrode, and the thickness is 15 / 300 nm.

[0027] Example 2 The preparation method of the Micro-LED with wavefront control function described in Example 1, as Figure 1 shown, includes the steps: S1 Immerse the GaN-based LED epitaxial bare chips successively in acetone and ethanol for boiling cleaning, then rinse with deionized water 30 times, and dry with a nitrogen gun to ensure that there are no any contaminants on the surface of the epitaxial wafer. Repeat the above steps every time a step is carried out to ensure the cleanliness of the experimental wafer; S2 Lithography is performed on the indium tin oxide transparent conductive layer 106 using a lithography process, with photoresist used as the mask material. After development, the mask material at both ends of the upper surface of the indium tin oxide transparent conductive layer 106 is removed to obtain the non-masked area. Inductively coupled plasma (ICP) is used to etch the non-masked area to etch out the light-emitting platform, and then the mask material is stripped off; S3 Photoresist is coated on the middle position of the upper surface of the light-emitting platform and the upper surface of the N-type GaN layer 103. Lithography is carried out, and a silicon dioxide layer 107 is grown to cover the side walls of the light-emitting platform surface. The photoresist is removed; S4 Photoresist is coated on the silicon dioxide layer 107, the N-type GaN layer 103, and the surface of the indium tin oxide transparent conductive layer 106. Lithography is carried out to expose the electrode window. The electrode material is grown using a magnetron sputtering process, and the photoresist is removed.

[0028] S5 Two different sizes of silicon dioxide nanospheres are fully dispersed in a mixed solvent of deionized water and ethanol. The volume ratio of deionized water:ethanol:nanospheres with a particle size of 300 nm:nanospheres with a particle size of 800 nm is 7:3:2:2. The above-mentioned mixture needs to be dispersed in an ultrasonic bath for 1 hour to make it fully dispersed. A clean beaker is filled with ultrapure water until the liquid level reaches 1 / 3 of the distance from the beaker mouth and placed on the loading platform of the lifting machine. The glass slide is clamped in the lifting machine fixture and slowly lowered to a position 2 mm above the liquid surface. After the liquid surface is stable, its lower surface is immersed in the liquid surface at an infiltration speed of 50 μm / s (the upper surface is above the liquid surface), and it is left stationary for 10 min. After the liquid surface is stable, a pipette is used to drop the dispersed nanosphere mixture drop by drop onto the glass slide, allowing it to slide down the glass slide into the deionized water. Under the action of the van der Waals force, self-assembly occurs on the liquid surface until a layer of nanospheres is distributed over the entire liquid surface. Then the lifting speed is set to 20 μm / s, and the glass slide is slowly pulled out of the liquid surface and left stationary for 10 min to make the liquid surface stable again. The prepared Micro-LED device is clamped in the lifting machine fixture and slowly lowered to a position 2 mm above the liquid surface. After the liquid surface is stable, it is immersed in the liquid surface at an infiltration speed of 30 μm / s and left stationary for 10 min. Then it is slowly pulled out of the liquid surface at a lifting speed of 15 μm / s, causing the nanospheres to be arranged on the surface of the Micro-LED chip under the action of capillary force and gravity.

[0029] S6 Reactive ion etching (RIE) technology is used to control the size and space separation of the nanospheres so that the nanocolumn spacing reaches 100 nm; S7 Then, using the above-mentioned nanospheres as a mask, inductively coupled plasma etching (ICP) technology is used for etching, and the BOE solution is used to remove the nanospheres to prepare a Micro-LED with wavefront modulation function.

[0030] Example 3 A Micro-LED with wavefront control function, as described in Embodiment 1, except that: the refined microstructure is an array structure composed of cylindrical protrusions, the height of the cylindrical protrusions is less than the thickness of the indium tin oxide transparent conductive layer 106, the height of the cylindrical protrusions is 50 nm, the diameters of the cylindrical protrusions are 100 nm and 300 nm respectively, and the spacing between adjacent cylindrical protrusions is 100 nm; other structures and parameters are the same as those in Embodiment 1.

[0031] The Micro-LED manufacturing method is as described in Embodiment 2, except that: in step S5, the particle sizes of the nano-microspheres are 200 nm and 400 nm; other steps and parameters are the same as those in Embodiment 2.

[0032] Embodiment 4 A Micro-LED with wavefront control function, as described in Embodiment 1, except that: the refined microstructure is an array structure composed of cylindrical protrusions, the height of the cylindrical protrusions is less than the thickness of the indium tin oxide transparent conductive layer 106, the height of the cylindrical protrusions is 60 nm, the diameters of the cylindrical protrusions are 200 nm and 700 nm respectively, and the spacing between adjacent cylindrical protrusions is 100 nm; other structures and parameters are the same as those in Embodiment 1.

[0033] The Micro-LED manufacturing method is the same as that in Embodiment 2.

[0034] Comparative Example 1 A Micro-LED, as described in Embodiment 1, except that: the surface of the indium tin oxide transparent conductive layer 106 is not treated, there is no refined microstructure, and it is a planar structure; other structures and parameters are the same as those in Embodiment 1.

[0035] The Micro-LED manufacturing method is as described in Embodiment 2, except that: steps S5 - S7 are omitted; other steps and conditions are the same as those in Embodiment 2.

[0036] Test Example The spectral test data of the devices in Embodiment 1 and Comparative Example 1 are as Figure 2 shown. It can be seen from the figure that the luminous intensity of the Micro-LED chip (Nanostructure) with a surface microstructure in Embodiment 1 is significantly improved compared with that of the planar Micro-LED (Planar) in the comparative example.

[0037] The Fourier space distribution diagrams of the light fields of the devices in Embodiment 1 (planar type) and Comparative Example 1 (with microstructures added) are as Figure 3As shown, in the absence of the metasurface, the light field is relatively dispersed and has a low intensity. After the microstructures are fabricated on the surface of the Micro-LED, the emission angle of the light field converges, and at the same time the field intensity also increases, which sufficiently demonstrates that the metasurface structure fabricated by this method has an obvious regulating effect on the light field.

[0038] The structure of the present invention is different from the existing methods. This method mainly forms an array of metasurface structures during the process of arranging nanospheres on the liquid surface, and then transfers this arrangement to the surface of the Micro-LED chip. Therefore, relatively complex metasurface structures can be realized by adjusting the structure and size of the nanoparticles.

Claims

1. A Micro-LED with wavefront modulation function, characterized in that, The surface of the indium tin oxide transparent conductive layer has a refined microstructure, which is an array structure composed of cylindrical protrusions, and the height of the cylindrical protrusions is less than the thickness of the indium tin oxide transparent conductive layer.

2. The Micro-LED with wavefront modulation function according to claim 1, characterized in that, The height of the cylindrical protrusions is 5 - 30 nm, the diameter is 300 - 800 nm, and the spacing between adjacent cylindrical protrusions is 50 - 200 nm.

3. The Micro-LED with wavefront modulation function according to claim 1, wherein The refined microstructure is an array structure composed of cylindrical protrusions with at least two diameters.

4. The Micro-LED with wavefront modulation function according to claim 1, wherein, The Micro-LED includes, from bottom to top in sequence: a sapphire substrate layer, a U-shaped GaN layer, an N-type GaN layer, a multi-quantum well layer, a P-type GaN layer, and an indium tin oxide transparent conductive layer; wherein the multi-quantum well layer, the P-type GaN layer, and the indium tin oxide transparent conductive layer form a light-emitting platform, which is arranged at the middle position of the upper surface of the N-type GaN layer; silica layers are arranged on the side walls of the light-emitting platform and are in contact with the upper surface of the indium tin oxide transparent conductive layer and the upper surface of the N-type GaN layer; an electrode is arranged on the surface of the silica layer on one side of the light-emitting platform and is in contact with the upper surface of the indium tin oxide transparent conductive layer, and an electrode is arranged on the upper surface of the N-type GaN layer on the other side of the light-emitting platform.

5. The Micro-LED with wavefront modulation function according to claim 4, characterized in that, The thickness of the sapphire substrate layer is 600 - 650 μm; the thickness of the U-shaped GaN layer is 3 - 4 μm; the thickness of the N-type GaN layer is 105 - 200 nm, the doping element is Si, and the doping concentration is 4×E18 - 6×E18; the material of the multi-quantum well layer is a superlattice periodic structure formed by alternating GaN layers and InGaN layers, the thickness of the GaN single layer is 20 - 30 nm, the thickness of the InGaN single layer is 20 - 30 nm, adjacent GaN layers and InGaN layers form a period, and there are 14 - 18 periods in total, and the emission wavelength of the multi-quantum well layer is 350 - 470 nm; the thickness of the P-type GaN layer is 105 - 200 nm, the doping element is Mg, and the doping concentration is 9×E19 - 2×E20; the thickness of the indium tin oxide transparent conductive layer is 60 - 80 nm; the thickness of the silica layer is 200 - 350 nm; the material of the electrode is a Ti / Au composite electrode, and the thickness is 10 - 20 / 250 - 350 nm.

6. The preparation method of the Micro-LED with wavefront modulation function according to any one of claims 1 - 5, comprising the steps: Fully disperse the nanospheres in a mixed solvent of deionized water and ethanol, then drop them into ultrapure water, and the nanospheres self-assemble on the surface of the solution under the action of van der Waals force; use the dip coating method to transfer the nanospheres to the upper surface of the indium tin oxide transparent conductive layer; use reactive ion etching technology (RIE) to control the size and space separation of the nanospheres; then use inductively coupled plasma etching technology (ICP) for etching with the above nanospheres as a mask to remove the nanospheres, and prepare the Micro-LED with wavefront modulation function.

7. The manufacturing method of the Micro-LED with wavefront modulation function according to claim 6, characterized in that, The method for preparing the Micro-LED further includes: processing a GaN-based LED epitaxial wafer to form a light-emitting platform, a silicon dioxide layer, and an electrode; the epitaxial wafer sequentially includes a sapphire substrate layer, a U-shaped GaN layer, an N-type GaN layer, a multi-quantum well layer, a P-type GaN layer, and an indium tin oxide transparent conductive layer from bottom to top.

8. The manufacturing method of the Micro-LED with wavefront modulation function according to claim 7, characterized in that, The method for processing a GaN-based LED epitaxial wafer to form a light-emitting platform, a silicon dioxide layer, and an electrode is as follows: i. Perform photolithography on the indium tin oxide transparent conductive layer using photolithography technology, and use photoresist as a mask material; Develop to remove the mask material at both ends of the upper surface of the indium tin oxide transparent conductive layer to obtain a non-mask area, use ICP to etch the non-mask area to etch out the light-emitting platform, and then strip the mask material; ii. Coat photoresist on the middle position of the upper surface of the light-emitting platform and the upper surface of the N-type GaN layer, perform photolithography, and grow a silicon dioxide layer to cover the side wall of the light-emitting platform surface, and remove the photoresist; iii. Coat photoresist on the silicon dioxide layer, the N-type GaN layer, and the surface of the indium tin oxide transparent conductive layer, perform photolithography to expose the electrode window, grow electrode material using magnetron sputtering or evaporation process, and remove the photoresist.

9. The manufacturing method of the Micro-LED with wavefront modulation function according to claim 6, characterized in that, The nano-microsphere material is silicon dioxide or polystyrene, and the diameter of the nano-microspheres is 300-500 nm.

10. The manufacturing method of the Micro-LED with wavefront modulation function according to claim 6, characterized in that, The volume ratio of deionized water: ethanol: nano-microspheres is 6-8: 2-4: 3-5; use BOE solution to remove the nano-spheres.

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