A maintenance method for improving the performance of silicon carbide cleaning brush heads

Abstract

The present invention relates to the field of semiconductor manufacturing technology, and specifically discloses a maintenance method for improving the performance of silicon carbide cleaning brush heads. The present invention utilizes deionized water immersion, ammonia immersion, and self-rotating overflow cleaning, combined with a method for bidirectional cleaning of the brush head and substrate using hydrogen peroxide and ammonia. This effectively solves the problem of excessive silicon carbide substrate particles or particle aggregation caused by the brush head's own material, effectively reduces the yield of unqualified products, and extends the service life of the brush head by at least 100%. The frequency of downtime caused by brush head replacement is reduced, production efficiency is improved, and high-purity and high-stability brush heads can be put into production. The method is suitable for industrial production applications and has broad application prospects in the fields of silicon carbide power devices and epitaxial wafer manufacturing.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to a maintenance method for improving the performance of a silicon carbide cleaning brush head. Background Art

[0002] During the manufacturing process of silicon carbide (SiC) power devices and epitaxial wafers, particulate contaminants on the substrate surface can significantly impact device yield and performance, placing extremely high demands on the cleaning process. As a core component of single-wafer cleaning equipment for SiC substrates, the cleaning brush head's cleanliness, stability, and service life directly determine cleaning effectiveness and production costs.

[0003] Currently, replacing microcontroller brush heads is generally done manually. The typical process involves placing a new brush head in a clean beaker, soaking it in deionized water for 6-12 hours, and then installing it into the brush head holder. After installation, the brush head is scrubbed with a substrate for normal process steps, and then tested for particle content using a surface defect detector. Only if the test results meet the required standards can the brush head be put into use. If the test results exceed the required standards or particle agglomeration is observed, the brush head must be re-soaked and the verification process repeated. This operation method has significant drawbacks: First, the process is cumbersome and time-consuming, and repeated verification leads to production delays, significantly impacting production efficiency. Second, during manual operation, the brush head is exposed to the environment for extended periods, creating a high risk of introducing particles or contamination, which can easily cause secondary contamination. This can lead to particle agglomeration or excessive particle content after cleaning, seriously compromising the cleaning quality of silicon carbide substrates. Third, the traditional soaking and verification method cannot accurately control brush head cleanliness, resulting in large fluctuations in cleaning results. This not only increases the incidence of defective substrates, but also leads to high downtime and equipment maintenance costs due to frequent brush head replacement.

[0004] As silicon carbide substrates develop towards larger size and higher flatness, the requirements for the performance of cleaning brush heads are becoming increasingly stringent. There is an urgent need for a brush head maintenance technology that can achieve high purification and long life to meet the growing production needs in the semiconductor manufacturing field. Summary of the Invention

[0005] In response to the problems in the maintenance method of silicon carbide substrate cleaning brush heads in the existing technology, such as complicated procedures, long time consumption, easy to cause secondary pollution, large fluctuations in cleaning effect, and increased production rate of unqualified substrates, the present invention provides a maintenance method for improving the performance of silicon carbide cleaning brush heads.

[0006] In order to solve the above technical problems, the technical solution provided by the present invention is:

[0007] A maintenance method for improving the performance of a silicon carbide cleaning brush head comprises the following steps:

[0008] S1, immersing the brush head in deionized water for a first preset time, rinsing the brush head with flowing deionized water, then immersing the brush head in an ammonia solution a for a second preset time, and then sequentially rinsing with deionized water and self-rotating overflow cleaning to obtain a pretreated brush head;

[0009] S2, sequentially scrubbing the clean silicon carbide substrate with a hydrogen peroxide solution, a first deionized water, an ammonia solution b, and a second deionized water using the pretreatment brush head, and drying the scrubbed silicon carbide substrate;

[0010] S3, detecting the number X1 of particles on the surface of the silicon carbide substrate. If X1-X0≤10, the brush head is usable; if X1-X0>10, proceeding to S4; wherein X0 is the initial number of particles on the surface of the clean silicon carbide substrate;

[0011] S4, sequentially using a hydrogen peroxide solution, a first deionized water, an ammonia solution b and a second deionized water to scrub the scrubbed silicon carbide substrate again with a brush head, and drying to obtain a clean silicon carbide substrate.

[0012] Compared with the prior art, the maintenance method provided by the present invention for improving the performance of silicon carbide cleaning brush heads first uses deionized water soaking + deionized water rinsing + ammonia soaking to remove pollutants such as metal ions, organic matter, and some particles remaining in the brush head; for tiny particles adsorbed in the gaps of the brush head and difficult to detach, the physical impact force formed by the self-rotation of the brush head and the superposition of fluids forms a dynamic scouring field, which, by virtue of the dual effects of centrifugal force and shear force, destroys the intermolecular forces between the tiny particles and the bristle surface, accelerating the particles to detach from the brush head surface; at the same time, the continuously updated fluid layer can effectively inhibit the detached particles from re-depositing on the brush head. Then, a clean silicon carbide substrate is used as a cleaning medium. During the scrubbing process, the brush head cleans the surface of the silicon carbide substrate and removes its surface impurities; at the same time, the microstructure and hardness characteristics of the substrate surface, through physical friction, reversely peel off the stubborn particles and impurities attached to the brush head surface, and the cleaned silicon carbide substrate can be directly used as the next batch of clean substrates to verify whether the brush heads meet the standards. This two-way cleaning action between the brush head and the substrate effectively improves the cleanliness and production efficiency of the brush head.

[0013] During the physical friction between the brush head and the silicon carbide substrate, the chemical reaction between hydrogen peroxide and ammonia is intensified. The micro-force generated by physical friction destroys the attachment structure between pollutants and the brush head, making it easier for the chemical to penetrate, weakening the binding force between pollutants, particles and bristles, and facilitating the detachment of tiny particles within the brush head. Furthermore, the hydroxyl radicals (·OH) produced during the decomposition of hydrogen peroxide can slightly etch the bristle surface, increasing surface roughness and enhancing the subsequent wetting effect of ammonia, which is more conducive to promoting the desorption of tiny particles from the brush head. The weak alkaline environment of ammonia neutralizes the acidic substances produced by the decomposition of hydrogen peroxide, preventing oxidative damage to the bristles. The combination of the two not only achieves efficient cleaning, but also reduces bristle damage caused by cleaning, extending the life of the brush head.

[0014] It should be noted that the brush head described in the present invention is a PVA sponge brush with a brush head diameter of 20mm~30mm.

[0015] Furthermore, in S1, the first preset time is 1.5h~3h.

[0016] Furthermore, in S1, the volume of the deionized water used to soak the brush head is 3 to 5 times the volume of the brush head.

[0017] Furthermore, in S1, the time for rinsing the brush head is 3 minutes to 5 minutes.

[0018] Furthermore, in S1, the second preset time is 0.5h~1h.

[0019] Furthermore, in S1, the volume of the ammonia solution a is 3 to 5 times the volume of the brush head.

[0020] The hydroxide ions released by the dissociation of ammonia water can make the surface of the brush head and the surface of the particles negatively charged, causing the particles and the brush head to repel each other, which is conducive to the separation of the particles from the brush head and improves the cleanliness of the brush head.

[0021] Furthermore, in S1, the ammonia solution a is a mixed solution of concentrated ammonia water with a mass concentration of 27% to 29% and deionized water, wherein the volume ratio of the concentrated ammonia water to the deionized water is 1:8 to 1:12.

[0022] It should be noted that the brush heads are soaked in a PFA bottle. Before use, the PFA bottle is rinsed with running deionized water for 3 to 5 minutes. The capacity of the PFA bottle can be selected according to the volume of the brush head, and the present invention does not make any special restrictions.

[0023] Furthermore, in S1, deionized water is used for rinsing until the washing liquid becomes neutral, and then overflow cleaning is used; wherein, during overflow cleaning, the rotation speed of the brush head is 100rpm~150rpm, the flow rate of deionized water is 100mL / min~200mL / min, and the overflow time is 5min~10min.

[0024] During overflow cleaning, the brush head spins, creating a dynamic scouring field by superimposing the physical impact of the fluid and the spin. This creates high-speed eddies during the fluid rotation process, accelerating the removal of particles from the brush head surface through the dual effects of shear and centrifugal forces. Simultaneously, the continuously renewed fluid layer effectively prevents particles from re-depositing on the brush head. Compared to traditional immersion methods, the pretreatment method of immersion + ammonia soaking + rinsing + self-spinning overflow provided by this invention maximizes brush head cleaning, minimizing the risk of excessive particles on the silicon carbide surface caused by the brush head, which increases the rate of defective substrates.

[0025] Furthermore, in S2, the number of particles (particle size ≥ 0.3 μm) on the surface of the clean silicon carbide substrate is ≤ 10, and there is no particle aggregation.

[0026] It should be noted that the above-mentioned clean silicon carbide substrate is obtained by adopting a conventional single-wafer cleaning process in the art, and the present invention does not make any special limitation thereto.

[0027] As a specific embodiment of the present invention, the preparation process of the clean silicon carbide substrate is as follows:

[0028] Step 1: Use a brush head to scrub the silicon carbide substrate that actually needs to be cleaned in production. The speed of the silicon carbide substrate is 300 rpm to 800 rpm, and the scrubbing time is 20 seconds to 40 seconds.

[0029] Step 2: Rinse with deionized water, with the silicon carbide substrate rotating at a speed of 300 rpm to 800 rpm and a scrubbing time of 10 s to 40 s;

[0030] Step 3: Rinse the silicon carbide substrate with a mixed solution of ammonia water and deionized water. The rotation speed of the silicon carbide substrate is 300 rpm to 800 rpm, and the scrubbing time is 20 s to 60 s. The mass fraction of ammonia water is 28%, and the volume ratio of ammonia water to deionized water is 1:3 to 1:8.

[0031] Step 4: Rinse with deionized water, with the silicon carbide substrate rotating at a speed of 300 rpm to 800 rpm and a scrubbing time of 10 s to 50 s;

[0032] Step 5: Rinse the silicon carbide substrate with a mixed solution of hydrochloric acid and deionized water. The rotation speed of the silicon carbide substrate is 300 rpm to 800 rpm, and the scrubbing time is 20 s to 40 s. The mass fraction of hydrochloric acid is 37%, and the volume ratio of hydrochloric acid to deionized water is 1:5 to 1:10.

[0033] Step 6: Rinse with deionized water, with the silicon carbide substrate rotating at a speed of 300 rpm to 800 rpm and a scrubbing time of 10 s to 50 s;

[0034] Step 7: Dry with nitrogen at a flow rate of 10 mL / min to 20 mL / min, a purity of 99.9%, a rotation speed of the silicon carbide substrate of 1000 rpm to 2500 rpm, and a drying time of 40 s to 60 s to obtain a clean silicon carbide substrate.

[0035] The clean silicon carbide substrate prepared as described above is qualified if the number of particles (particle size ≥ 0.3 μm) on the surface is ≤ 10 and there is no particle aggregation.

[0036] Furthermore, in S2 and S4, during the entire scrubbing process, the rotation speed of the brush head is 100 r / min to 120 r / min.

[0037] Furthermore, in S2 and S4, the hydrogen peroxide solution is a mixed solution of hydrogen peroxide with a mass concentration of 28% to 32% and deionized water, wherein the volume ratio of the hydrogen peroxide to the deionized water is 1:50 to 1:200.

[0038] Furthermore, in S2 and S4, the ammonia solution b is a mixed solution of concentrated ammonia water with a mass concentration of 27% to 29% and deionized water, wherein the volume ratio of the concentrated ammonia water to the deionized water is 1:3.5 to 1:6.

[0039] Furthermore, in S2, the scrubbing time of the hydrogen peroxide solution is 20s-40s, and the rotation speed of the clean silicon carbide substrate during the scrubbing process is 550r / min-800r / min.

[0040] Furthermore, in S2, the scrubbing time of the ammonia solution b is 20s-45s, and the rotation speed of the clean silicon carbide substrate during the scrubbing process is 300r / min-500r / min.

[0041] Furthermore, in S2 and S4, the scrubbing time of the first deionized water is 10s-30s, and the rotation speed of the clean silicon carbide substrate during the scrubbing process is 550r / min-800r / min.

[0042] Furthermore, in S2 and S4, the scrubbing time of the second deionized water is 10s-20s, and the rotation speed of the clean silicon carbide substrate during the scrubbing process is 300r / min-500r / min.

[0043] Furthermore, in S4, the scrubbing time of the hydrogen peroxide solution is 30s to 60s, and the rotation speed of the clean silicon carbide substrate during the scrubbing process is 550r / min to 800r / min.

[0044] Furthermore, in S4, the scrubbing time of the ammonia solution b is 30s-70s, and the rotation speed of the clean silicon carbide substrate during the scrubbing process is 300r / min-500r / min.

[0045] It should be noted that the rotation involved in the above steps is all horizontal rotation. Process steps without special temperature requirements are all carried out at room temperature (20-25°C).

[0046] Specifically, the drying described in S2 and S4 in the present invention refers to nitrogen drying, with a nitrogen flow rate of 10 mL / min to 20 mL / min, a purity of 99.9%, a silicon carbide substrate rotation speed of 1500 rpm to 2500 rpm, and a drying time of 25 s to 45 s.

[0047] The present invention effectively solves the problem of tiny particles remaining in the gaps of the brush head that are difficult to remove through the close coordination of multiple cleaning processes, avoids the problem of excessive silicon carbide substrate particles or particle aggregation caused by the traditional brush head soaking process, effectively reduces the generation rate of unqualified substrates, and extends the service life of the brush head. At the same time, it also avoids the risk of downtime caused by unstable or unqualified cleaning effects, and realizes the high purification and high stability of the brush head for production. It has wide applicability and promotion value, is suitable for industrial production applications, and has broad application prospects in the fields of silicon carbide power devices and epitaxial wafer manufacturing. BRIEF DESCRIPTION OF THE DRAWINGS

[0048] Figure 1 This is a process flow chart for cleaning a silicon carbide substrate using a brush head in an embodiment of the present invention;

[0049] Figure 2 : is a particle distribution diagram of the original silicon carbide substrate A in Example 1 of the present invention;

[0050] Figure 3 This is a particle distribution diagram after the silicon carbide substrate A is brushed with the cleaned brush head in Example 1 of the present invention;

[0051] Figure 4 This is a particle distribution diagram after a silicon carbide substrate is cleaned using a cleaned brush head in Example 1 of the present invention;

[0052] Figure 5 2 is a particle distribution diagram of the original silicon carbide substrate B in Example 2 of the present invention;

[0053] Figure 6 This is a particle distribution diagram after the silicon carbide substrate B is brushed with the cleaned brush head in Example 2 of the present invention;

[0054] Figure 7 This is a particle distribution diagram after a single silicon carbide substrate is cleaned using a cleaned brush head in Example 2 of the present invention;

[0055] Figure 8 3 is a particle distribution diagram of the original silicon carbide substrate C in Example 3 of the present invention;

[0056] Figure 9 This is a particle distribution diagram after the silicon carbide substrate C is brushed for the first time using the cleaned brush head in Example 3 of the present invention;

[0057] Figure 10 This is a particle distribution diagram after the silicon carbide substrate C is brushed for the second time using the cleaned brush head in Example 3 of the present invention;

[0058] Figure 11 This is a particle distribution diagram after a single silicon carbide substrate is cleaned using the brush head after the second cleaning in Example 3 of the present invention;

[0059] Figure 12 : is a particle distribution diagram of the original silicon carbide substrate D in Example 4 of the present invention;

[0060] Figure 13 This is a particle distribution diagram after the silicon carbide substrate D is brushed for the first time using the cleaned brush head in Example 4 of the present invention;

[0061] Figure 14 This is a particle distribution diagram after the silicon carbide substrate D is brushed for the second time using the cleaned brush head in Example 4 of the present invention;

[0062] Figure 15 This is a particle distribution diagram after a single silicon carbide substrate is cleaned using the brush head after the second cleaning in Example 4 of the present invention;

[0063] Figure 16 : is a particle distribution diagram of the original silicon carbide substrate in Comparative Example 1 of the present invention;

[0064] Figure 17 This is a particle distribution diagram after the silicon carbide substrate is brushed with the cleaned brush head in Comparative Example 1 of the present invention;

[0065] Figure 18 This is a particle distribution diagram after a single silicon carbide substrate is cleaned using the cleaned brush head in Comparative Example 1 of the present invention;

[0066] Figure 19 : is a particle distribution diagram of the original silicon carbide substrate E in Comparative Example 2 of the present invention;

[0067] Figure 20 This is a particle distribution diagram after the silicon carbide substrate E is brushed with the cleaned brush head in Comparative Example 2 of the present invention;

[0068] Figure 21 This is a particle distribution diagram after a single silicon carbide substrate is cleaned using a cleaned brush head in Comparative Example 2 of the present invention;

[0069] Figure 22 3 is a particle distribution diagram of the original silicon carbide substrate F in Comparative Example 3 of the present invention;

[0070] Figure 23 This is a particle distribution diagram after the silicon carbide substrate F is brushed with the cleaned brush head in Comparative Example 3 of the present invention;

[0071] Figure 24 This is a particle distribution diagram after a single silicon carbide substrate is cleaned using a cleaned brush head in Comparative Example 3 of the present invention;

[0072] Figure 25 4 is a particle distribution diagram of the original silicon carbide substrate in Comparative Example 4 of the present invention;

[0073] Figure 26 This is a particle distribution diagram after the silicon carbide substrate is brushed with the cleaned brush head in Comparative Example 4 of the present invention;

[0074] Figure 27 This is a particle distribution diagram after a single silicon carbide substrate is cleaned using a cleaned brush head in Comparative Example 4 of the present invention. DETAILED DESCRIPTION

[0075] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0076] In order to better illustrate the present invention, further examples are given below.

[0077] The preparation method of the clean silicon carbide substrate used in the following examples and comparative examples is as follows:

[0078] Step 1: Use a brush head to scrub the silicon carbide substrate at a speed of 800 rpm for 40 seconds.

[0079] Step 2: Rinse with deionized water, the silicon carbide substrate rotation speed is 800 rpm, and the scrubbing time is 40 seconds;

[0080] Step 3: Rinse the silicon carbide substrate with a mixed solution of concentrated ammonia and deionized water. The rotation speed of the silicon carbide substrate is 800 rpm and the scrubbing time is 60 seconds. The mass fraction of the concentrated ammonia is 28%, and the volume ratio of the concentrated ammonia to deionized water is 1:8.

[0081] Step 4: Rinse with deionized water, the silicon carbide substrate rotation speed is 800 rpm, and the scrubbing time is 50 seconds;

[0082] Step 5: Rinse the silicon carbide substrate with a mixed solution of hydrochloric acid and deionized water. The rotation speed of the silicon carbide substrate is 800 rpm and the scrubbing time is 40 seconds. The mass fraction of hydrochloric acid is 37%, and the volume ratio of hydrochloric acid to deionized water is 1:10.

[0083] Step 6: Rinse with deionized water, the silicon carbide substrate rotation speed is 800 rpm, and the scrubbing time is 50 seconds;

[0084] Step 7: Nitrogen drying, with a nitrogen flow rate of 20 mL / min, a purity of 99.9%, a silicon carbide substrate rotation speed of 2500 rpm, and a drying time of 60 s, to obtain a clean silicon carbide substrate.

[0085] The clean silicon carbide substrate prepared as described above is qualified if the number of particles (particle size ≥ 0.3 μm) on the surface is ≤ 10 and there is no particle aggregation.

[0086] The deionized water used in the following examples and comparative examples had a resistivity greater than 18.2 MΩ·cm. The concentration of concentrated ammonia was 28 wt %, the concentration of hydrogen peroxide was 37 wt %, and the purity of nitrogen gas was 99.9%.

[0087] Example 1

[0088] This embodiment provides a maintenance method for improving the performance of a silicon carbide cleaning brush head, comprising the following steps:

[0089] S1, rinse the PFA bottle with running deionized water for 3 minutes, fill it with deionized water, and then completely immerse the new brush head in deionized water for 1.5 hours; the volume of deionized water should be 5 times the volume of the brush head;

[0090] S2, rinse the brush head with running deionized water for 3 min;

[0091] S3, rinse the PFA bottle with running deionized water for 3 minutes, fill it with ammonia solution a, and completely immerse the brush head in ammonia solution a for 1 hour; ammonia solution a is a mixed solution of concentrated ammonia water and deionized water with a volume ratio of 1:8; the volume of ammonia solution a is 5 times the volume of the brush head;

[0092] S4, rinse the brush head with running deionized water for 5 minutes, test the pH of the washing water to 7, install the brush head in the brush card slot, and avoid direct contact with the brush head with your hands;

[0093] S5, rotating the brush head on the brush head station at a speed of 150 rpm, and performing overflow cleaning on the brush head, with a deionized water flow rate of 100 mL / min and an overflow time of 10 min;

[0094] S6, take a clean silicon carbide substrate A (the particle distribution diagram detected by the surface defect instrument is as follows Figure 2As shown, X0=0), the cleaned silicon carbide substrate was scrubbed with a mixed solution of hydrogen peroxide and deionized water using the brush head after cleaning. During the scrubbing process, the brush head rotated at 100 rpm, the silicon carbide substrate rotated at 550 rpm, and the scrubbing time was 20 s. The volume ratio of hydrogen peroxide to deionized water was 1:100.

[0095] S7, scrubbing the silicon carbide substrate with deionized water. During the scrubbing process, the speed of the brush head is 100 rpm, the speed of the silicon carbide substrate is 550 rpm, and the scrubbing time is 10 s.

[0096] S8, scrubbing the silicon carbide substrate with an ammonia solution b, with the brush head rotating at 100 rpm, the silicon carbide substrate rotating at 500 rpm, and the scrubbing time being 45 s; the ammonia solution b is a mixed solution of concentrated ammonia and deionized water in a volume ratio of 1:4;

[0097] S9, scrubbing the silicon carbide substrate with deionized water. During the scrubbing process, the speed of the brush head is 100 rpm, the speed of the silicon carbide substrate is 500 rpm, and the scrubbing time is 10 s.

[0098] S10, nitrogen drying, nitrogen flow rate 20 mL / min, silicon carbide substrate rotation speed 2500 rpm, drying time 25 s.

[0099] The surface defect instrument is used to test the particles on the cleaned substrate. The particle distribution diagram is as follows: Figure 3 As shown, the number of particles on the substrate surface after cleaning is X1 = 0. X1-X0=0<10, and the brush head can be used.

[0100] The conventional single-wafer cleaning process is performed on the silicon carbide substrate using the brush head after cleaning, and the surface defect detection of the cleaned silicon carbide substrate is performed. The specific steps are as follows:

[0101] Step 1: Use a brush head to scrub the silicon carbide substrate that actually needs to be cleaned in production. The speed of the silicon carbide substrate is 800 rpm and the scrubbing time is 40 seconds.

[0102] Step 2: Rinse with deionized water, the silicon carbide substrate rotation speed is 800 rpm, and the scrubbing time is 40 seconds;

[0103] Step 3: Rinse the silicon carbide substrate with a mixed solution of ammonia water and deionized water. The rotation speed of the silicon carbide substrate is 800 rpm and the scrubbing time is 60 s. The mass fraction of the ammonia water is 28 wt %, and the volume ratio of ammonia water to deionized water is 1:8.

[0104] Step 4: Rinse with deionized water, the silicon carbide substrate rotation speed is 800 rpm, and the scrubbing time is 50 seconds;

[0105] Step 5: Rinse the silicon carbide substrate with a mixed solution of hydrochloric acid and deionized water. The rotation speed of the silicon carbide substrate is 800 rpm and the scrubbing time is 40 seconds. The mass fraction of hydrochloric acid is 37 wt %, and the volume ratio of hydrochloric acid to deionized water is 1:10.

[0106] Step 6: Rinse with deionized water, the silicon carbide substrate rotation speed is 800 rpm, and the scrubbing time is 50 seconds;

[0107] Step 7: Nitrogen drying, with a nitrogen flow rate of 20 mL / min, a purity of 99.9%, a silicon carbide substrate rotation speed of 2500 rpm, and a drying time of 60 s, to obtain a clean silicon carbide substrate.

[0108] The surface defect detector is used to test the cleaned substrate. The particle size X2=0 is tested. The particle distribution is as follows: Figure 4 , make sure the brush head is available.

[0109] The industry standard for the substrate after cleaning requires that the number of particles with a diameter of 0.3μm or larger is ≤60, and the number of particles with an internal control diameter of 0.3μm or larger is ≤20.

[0110] Example 2

[0111] This embodiment provides a maintenance method for improving the performance of a silicon carbide cleaning brush head, comprising the following steps:

[0112] S1, rinse the PFA bottle with running deionized water for 5 minutes, fill it with deionized water, and then completely immerse the new brush head in deionized water for 3 hours; the volume of deionized water should be 3 times the volume of the brush head;

[0113] S2, rinse the brush head with running deionized water for 5 min;

[0114] S3, rinse the PFA bottle with running deionized water for 5 minutes, fill it with ammonia solution a, and completely immerse the brush head in ammonia solution a for 0.5 hours; ammonia solution a is a mixed solution of concentrated ammonia water and deionized water with a volume ratio of 1:12; the volume of ammonia solution a is 3 times the volume of the brush head;

[0115] S4, rinse the brush head with running deionized water for 8 minutes, test the pH of the washing water to 7, install the brush head in the brush card slot, and avoid direct contact with the brush head with your hands;

[0116] S5, rotating the brush head on the brush head station at a speed of 100 rpm, and overflow cleaning the brush head with deionized water at a flow rate of 200 mL / min and an overflow time of 5 min;

[0117] S6, take a clean silicon carbide substrate B (the particle distribution diagram detected by the surface defect instrument is as follows Figure 5As shown, X0=10), the cleaned silicon carbide substrate was scrubbed with a mixed solution of hydrogen peroxide and deionized water using the brush head after cleaning. During the scrubbing process, the brush head rotated at 120 rpm, the silicon carbide substrate rotated at 800 rpm, and the scrubbing time was 40 s. The volume ratio of hydrogen peroxide to deionized water was 1:200.

[0118] S7, scrubbing the silicon carbide substrate with deionized water, with the brush head rotating at 120 rpm, the silicon carbide substrate rotating at 800 rpm, and the scrubbing time being 30 s;

[0119] S8, scrubbing the silicon carbide substrate with an ammonia solution b, wherein the scrubbing head rotates at 120 rpm, the silicon carbide substrate rotates at 300 rpm, and the scrubbing time is 20 s; the ammonia solution b is a mixed solution of ammonia water and deionized water in a volume ratio of 1:3.5;

[0120] S9, scrubbing the silicon carbide substrate with deionized water. During the scrubbing process, the brush head rotates at 120 rpm, the silicon carbide substrate rotates at 300 rpm, and the scrubbing time is 20 s.

[0121] S10, nitrogen drying, nitrogen flow rate 10 mL / min, silicon carbide substrate rotation speed 1500 rpm, drying time 45 s.

[0122] The surface defect instrument is used to test the particles on the cleaned substrate. The particle distribution diagram is as follows: Figure 6 As shown, the number of particles on the substrate surface after cleaning is X1 = 0. X1-X0=0-10<10, and the brush head can be used.

[0123] The above-mentioned brush head after cleaning is used to perform a conventional single-wafer cleaning process on the silicon carbide substrate that actually needs to be cleaned in production. The single-wafer cleaning process is exactly the same as in Example 1 and will not be repeated here. The cleaned silicon carbide substrate is subjected to surface defect detection. The surface defect detector is used to test the particles X2=3 after cleaning. The distribution of the test particles is as follows: Figure 7 , make sure the brush head is available.

[0124] Example 3

[0125] This embodiment provides a maintenance method for improving the performance of a silicon carbide cleaning brush head, comprising the following steps:

[0126] S1, rinse the PFA bottle with running deionized water for 3 minutes, fill it with deionized water, and then completely immerse the new brush head in deionized water for 2 hours; the volume of deionized water should be 5 times the volume of the brush head;

[0127] S2, rinse the brush head with running deionized water for 3 min;

[0128] S3, rinse the PFA bottle with running deionized water for 3 minutes, fill it with ammonia solution a, and completely immerse the brush head in ammonia solution a for 1 hour; ammonia solution a is a mixed solution of concentrated ammonia water and deionized water with a volume ratio of 1:10; the volume of ammonia solution a is 4 times the volume of the brush head;

[0129] S4, rinse the brush head with running deionized water for 5 minutes, test the pH of the washing water to 7, install the brush head in the brush card slot, and avoid direct contact with the brush head with your hands;

[0130] S5, rotating the brush head on the brush head station at a speed of 120 rpm, and performing overflow cleaning on the brush head, with a deionized water flow rate of 100 mL / min and an overflow time of 10 min;

[0131] S6, take a clean silicon carbide substrate C (the particle distribution diagram detected by the surface defect instrument is as follows Figure 8 As shown, X0=0), the clean silicon carbide substrate was scrubbed with a mixed solution of hydrogen peroxide and deionized water using the brush head after cleaning. The brush head rotated at 100 rpm, the silicon carbide substrate rotated at 550 rpm, and the scrubbing time was 20 s. The volume ratio of hydrogen peroxide to deionized water was 1:50.

[0132] S7, scrubbing the silicon carbide substrate with deionized water. During the scrubbing process, the speed of the brush head is 100 rpm, the speed of the silicon carbide substrate is 550 rpm, and the scrubbing time is 10 s.

[0133] S8, scrubbing the silicon carbide substrate with an ammonia solution b, wherein the scrubbing head rotates at 100 rpm, the silicon carbide substrate rotates at 500 rpm, and the scrubbing time is 45 s; the ammonia solution b is a mixed solution of ammonia water and deionized water in a volume ratio of 1:6;

[0134] S9, scrubbing the silicon carbide substrate with deionized water. During the scrubbing process, the speed of the brush head is 100 rpm, the speed of the silicon carbide substrate is 500 rpm, and the scrubbing time is 10 s.

[0135] S10, nitrogen drying, nitrogen flow rate 20 mL / min, silicon carbide substrate rotation speed 2500 rpm, drying time 25 s.

[0136] The surface defect instrument is used to test the particles on the cleaned substrate. The particle distribution diagram is as follows: Figure 9 As shown, the number of particles on the substrate surface after cleaning is X1 = 11. X1-X0=11-0>10, the brush head cannot be used and needs to be cleaned a second time.

[0137] S11, using the cleaned brush head, continue to scrub the silicon carbide substrate with a mixed solution of hydrogen peroxide and deionized water. During the scrubbing process, the brush head rotates at 100 rpm, the silicon carbide substrate rotates at 550 rpm, and the scrubbing time is 30 seconds. The volume ratio of hydrogen peroxide to deionized water is 1:50.

[0138] S12, same as S7;

[0139] S13, scrubbing the silicon carbide substrate with an ammonia solution b, with the brush head rotating at 100 rpm, the silicon carbide substrate rotating at 500 rpm, and the scrubbing time being 70 s; the ammonia solution b is a mixed solution of concentrated ammonia and deionized water in a volume ratio of 1:6;

[0140] S14, same as S9;

[0141] S15, same as S10.

[0142] The surface defect instrument is used to test the particles on the cleaned substrate. The particle distribution diagram is as follows: Figure 10 As shown, the number of particles on the substrate surface after cleaning is X2 = 3. X2-X0=3-0<10, and the brush head can be used.

[0143] The above-mentioned brush head after cleaning is used to perform a conventional single-wafer cleaning process on the silicon carbide substrate that actually needs to be cleaned in production. The single-wafer cleaning process is exactly the same as in Example 1 and will not be repeated here. The cleaned silicon carbide substrate is then subjected to surface defect detection. The surface defect detector is used to test the particles X3=1. The distribution of the test particles is as follows: Figure 11 , make sure the brush head is available.

[0144] Example 4

[0145] This embodiment provides a maintenance method for improving the performance of a silicon carbide cleaning brush head, comprising the following steps:

[0146] S1, rinse the PFA bottle with running deionized water for 5 minutes, fill it with deionized water, and then completely immerse the new brush head in deionized water for 3 hours; the volume of deionized water should be 3 times the volume of the brush head;

[0147] S2, rinse the brush head with running deionized water for 5 min;

[0148] S3, rinse the PFA bottle with running deionized water for 5 minutes, fill it with ammonia solution a, and completely immerse the brush head in ammonia solution a for 0.5 hours; ammonia solution a is a mixed solution of concentrated ammonia water and deionized water with a volume ratio of 1:8; the volume of ammonia solution a is 3 times the volume of the brush head;

[0149] S4, rinse the brush head with running deionized water for 8 minutes, test the pH of the washing water to 7, install the brush head in the brush card slot, and avoid direct contact with the brush head with your hands;

[0150] S5, rotating the brush head on the brush head station at a speed of 110 rpm, and performing overflow cleaning on the brush head, with a deionized water flow rate of 200 mL / min and an overflow time of 5 min;

[0151] S6, take a clean silicon carbide substrate D (the particle distribution diagram detected by the surface defect instrument is as follows Figure 12 As shown, X0=10), the cleaned silicon carbide substrate was scrubbed with a mixed solution of hydrogen peroxide and deionized water using the brush head after cleaning. During the scrubbing process, the brush head rotated at 150 rpm, the silicon carbide substrate rotated at 800 rpm, and the scrubbing time was 40 s. The volume ratio of hydrogen peroxide to deionized water was 1:150.

[0152] S7, scrubbing the silicon carbide substrate with deionized water. During the scrubbing process, the speed of the brush head is 120 rpm, the speed of the silicon carbide substrate is 800 rpm, and the scrubbing time is 20 s.

[0153] S8, scrubbing the silicon carbide substrate with an ammonia solution b, wherein the scrubbing head rotates at 120 rpm, the silicon carbide substrate rotates at 300 rpm, and the scrubbing time is 20 s; the ammonia solution b is a mixed solution of ammonia water and deionized water in a volume ratio of 1:6;

[0154] S9, scrubbing the silicon carbide substrate with deionized water. During the scrubbing process, the brush head rotates at 120 rpm, the silicon carbide substrate rotates at 300 rpm, and the scrubbing time is 20 s.

[0155] S10, nitrogen drying, nitrogen flow rate 10 mL / min, silicon carbide substrate rotation speed 1500 rpm, drying time 45 s.

[0156] The surface defect instrument is used to test the particles on the cleaned substrate. The particle distribution diagram is as follows: Figure 13 As shown, the number of particles on the substrate surface after cleaning is X1 = 56. X1-X0=56-10>10, the brush head cannot be used and needs to be cleaned a second time.

[0157] S11, using the cleaned brush head, continue to scrub the silicon carbide substrate with a mixed solution of hydrogen peroxide and deionized water. During the scrubbing process, the brush head rotates at 150 rpm, the silicon carbide substrate rotates at 800 rpm, and the scrubbing time is 60 seconds. The volume ratio of hydrogen peroxide to deionized water is 1:150.

[0158] S12, same as S7;

[0159] S13, scrubbing the silicon carbide substrate with an ammonia solution b, wherein the scrubbing head rotates at 120 rpm, the silicon carbide substrate rotates at 300 rpm, and the scrubbing time is 30 s; the ammonia solution b is a mixed solution of ammonia water and deionized water in a volume ratio of 1:6;

[0160] S14, same as S9;

[0161] S15, same as S10.

[0162] The surface defect instrument is used to test the particles on the cleaned substrate. The particle distribution diagram is as follows: Figure 14 As shown, the number of particles on the substrate surface after cleaning is X2 = 7. X2-X0=7-10<10, and the brush head can be used.

[0163] The brush head after cleaning is used to perform conventional single-wafer cleaning process on the silicon carbide substrate that actually needs to be cleaned in production. The single-wafer cleaning process is exactly the same as that in Example 1 and will not be repeated here. The cleaned silicon carbide substrate is subjected to surface defect detection. The surface defect detector is used to test the particles X3=2 after cleaning. The distribution of the test particles is as follows: Figure 15 , make sure the brush head is available.

[0164] Comparative Example 1

[0165] This comparative example provides a traditional method for cleaning a silicon carbide brush head, comprising the following steps:

[0166] S1, rinse the PFA bottle with running deionized water for 3 minutes, fill it with deionized water, and then completely immerse the new brush head in deionized water for 6 hours; the volume of deionized water is 5 times the volume of the brush head;

[0167] S2. Rinse the brush head with running deionized water for 3 minutes, then install the brush in the brush slot to avoid direct contact with your hands.

[0168] The conventional single-wafer cleaning process is performed on the silicon carbide substrate using the brush head after cleaning. The single-wafer cleaning process is exactly the same as that in Example 1 and will not be repeated here. The cleaned silicon carbide substrate is subjected to surface defect detection. The surface defect detector is used to test the particles X1=120 after cleaning. The distribution of the test particles is as follows: Figure 17 , the particle distribution diagram of the original silicon carbide substrate is as follows Figure 16 As shown (X0=0).

[0169] After the brush head is soaked in traditional deionized water, the difference between the particle value and the initial substrate particle value is X1-X0=120-0>10, and the particle value is much larger than the standard. The particles are distributed on the surface in a relatively concentrated manner, and the brush head is unusable.

[0170] The brush head is cleaned by repeating the above steps S1 and S2 again, and the brush head after cleaning is used to perform conventional single-wafer cleaning process on the silicon carbide substrate that actually needs to be cleaned in production. The single-wafer cleaning process is exactly the same as that in Example 1 and will not be described here. The cleaned substrate is tested by surface defect detector with particles X2=59, and the distribution of test particles is as follows Figure 18 , make sure the secondary cleaning brush head is available.

[0171] Comparative Example 2

[0172] This comparative example provides a method for cleaning a silicon carbide brush head. The only difference from Example 2 is that S3 to S5 are omitted, and the rest are identical. The specific cleaning method steps are as follows:

[0173] S1, rinse the PFA bottle with running deionized water for 5 minutes, fill it with deionized water, and then completely immerse the new brush head in deionized water for 3 hours; the volume of deionized water should be 3 times the volume of the brush head;

[0174] S2, rinse the brush head with running deionized water for 5 min;

[0175] S3, take a clean silicon carbide substrate E (the particle distribution diagram of the surface defect instrument is as follows Figure 19 As shown, X0=9), the cleaned silicon carbide substrate was scrubbed with a mixed solution of hydrogen peroxide and deionized water using the brush head after cleaning. During the scrubbing process, the brush head rotated at 120 rpm, the silicon carbide substrate rotated at 800 rpm, and the scrubbing time was 40 s. The volume ratio of hydrogen peroxide to deionized water was 1:200.

[0176] S4, scrubbing the silicon carbide substrate with deionized water. During the scrubbing process, the brush head rotates at 120 rpm, the silicon carbide substrate rotates at 800 rpm, and the scrubbing time is 30 s.

[0177] S5, scrubbing the silicon carbide substrate with an ammonia solution b, with the brush head rotating at 120 rpm, the silicon carbide substrate rotating at 300 rpm, and the scrubbing time being 20 s; the ammonia solution b is a mixed solution of concentrated ammonia and deionized water in a volume ratio of 1:3.5;

[0178] S6, scrubbing the silicon carbide substrate with deionized water, with the brush head rotating at 120 rpm, the silicon carbide substrate rotating at 300 rpm, and the scrubbing time being 20 s;

[0179] S7, nitrogen drying, nitrogen flow rate 10 mL / min, silicon carbide substrate rotation speed 1500 rpm, drying time 45 s.

[0180] The surface defect instrument is used to test the particles on the cleaned substrate. The particle distribution diagram is as follows: Figure 20As shown in the figure, the number of particles on the surface of the cleaned substrate is X1 = 57. X1-X0 = 57-9>10, the particle value is much larger than the standard, and the particles are distributed more concentratedly on the surface.

[0181] The brush head after cleaning is used to perform conventional single-wafer cleaning process on the silicon carbide substrate that actually needs to be cleaned in production. The single-wafer cleaning process is exactly the same as in Example 1 and will not be repeated here. The cleaned substrate is tested by surface defect detector with particle X2=52, and the test particle distribution is as follows Figure 21 , make sure the brush head is available.

[0182] Comparative Example 3

[0183] This comparative example provides a method for cleaning a silicon carbide brush head. The only difference from Example 2 is that steps S3 to S5 are omitted, and the time for brushing the silicon carbide substrate with a hydrogen peroxide solution and an ammonia solution is extended. The specific cleaning method steps are as follows:

[0184] S1, rinse the PFA bottle with running deionized water for 5 minutes, fill it with deionized water, and then completely immerse the new brush head in deionized water for 3 hours; the volume of deionized water should be 3 times the volume of the brush head;

[0185] S2, rinse the brush head with running deionized water for 5 min;

[0186] S3, take a clean silicon carbide substrate F (the particle distribution diagram detected by the surface defect instrument is as follows Figure 22 As shown, X0=10), the cleaned silicon carbide substrate was scrubbed with a mixed solution of hydrogen peroxide and deionized water using the brush head after cleaning. During the scrubbing process, the brush head rotated at 120 rpm, the silicon carbide substrate rotated at 800 rpm, and the scrubbing time was 80 s. The volume ratio of hydrogen peroxide to deionized water was 1:200.

[0187] S4, scrubbing the silicon carbide substrate with deionized water. During the scrubbing process, the brush head rotates at 120 rpm, the silicon carbide substrate rotates at 800 rpm, and the scrubbing time is 30 s.

[0188] S5, scrubbing the silicon carbide substrate with an ammonia solution b, with the brush head rotating at 120 rpm, the silicon carbide substrate rotating at 300 rpm, and the scrubbing time being 90 s; the ammonia solution b is a mixed solution of concentrated ammonia and deionized water in a volume ratio of 1:3.5;

[0189] S6, scrubbing the silicon carbide substrate with deionized water, with the brush head rotating at 120 rpm, the silicon carbide substrate rotating at 300 rpm, and the scrubbing time being 20 s;

[0190] S7, nitrogen drying, nitrogen flow rate 10 mL / min, silicon carbide substrate rotation speed 1500 rpm, drying time 45 s.

[0191] The surface defect instrument is used to test the particles on the cleaned substrate. The particle distribution diagram is as follows: Figure 23 As shown in the figure, the number of particles on the surface of the cleaned substrate is X1 = 51. X1-X0 = 51-10>10, the particle value is much larger than the standard, and the particles are distributed more concentratedly on the surface.

[0192] The above-mentioned brush head after cleaning is used to perform a conventional single-wafer cleaning process on the silicon carbide substrate that actually needs to be cleaned in production. The single-wafer cleaning process is exactly the same as in Example 1 and will not be repeated here. The cleaned silicon carbide substrate is then subjected to surface defect detection. The surface defect detector is used to test the particles X2=42. The distribution of the test particles is as follows: Figure 24 , make sure the brush head is available.

[0193] Comparative Example 4

[0194] This comparative example provides a method for cleaning a silicon carbide brush head. The only difference from Example 1 is that S6 to S8 are omitted. The specific steps are as follows:

[0195] S1, rinse the PFA bottle with running deionized water for 3 minutes, fill it with deionized water, and then completely immerse the new brush head in deionized water for 1.5 hours; the volume of deionized water should be 5 times the volume of the brush head;

[0196] S2, rinse the brush head with running deionized water for 3 min;

[0197] S3, rinse the PFA bottle with running deionized water for 3 minutes, fill it with ammonia solution a, and completely immerse the brush head in ammonia solution a for 1 hour; ammonia solution a is a mixed solution of concentrated ammonia water and deionized water with a volume ratio of 1:8; the volume of ammonia solution a is 5 times the volume of the brush head;

[0198] S4, rinse the brush head with running deionized water for 5 minutes, test the pH of the washing water to 7, install the brush head in the brush card slot, and avoid direct contact with the brush head with your hands;

[0199] S5, rotating the brush head on the brush head station at a speed of 150 rpm, and overflow cleaning the brush head with deionized water at a flow rate of 100 mL / min and an overflow time of 10 min;

[0200] S6, scrubbing the silicon carbide substrate with deionized water, with the brush head rotating at 100 rpm, the silicon carbide substrate rotating at 500 rpm, and the scrubbing time being 10 s;

[0201] S7, nitrogen drying, nitrogen flow rate 20 mL / min, silicon carbide substrate rotation speed 2500 rpm, drying time 25 s.

[0202] The surface defect instrument is used to test the particles on the cleaned substrate. The particle distribution diagram is as follows: Figure 26 As shown, the number of particles on the surface of the cleaned substrate is X1=53; the particle distribution diagram of the initial silicon carbide substrate is as follows Figure 25 As shown in the figure, X1-X0=53-10>10, the particle value is much larger than the standard, and the particles are distributed more concentratedly.

[0203] The above-mentioned brush head after cleaning is used to perform a conventional single-wafer cleaning process on the silicon carbide substrate that actually needs to be cleaned in production. The single-wafer cleaning process is exactly the same as in Example 1 and will not be repeated here. The cleaned silicon carbide substrate is then subjected to surface defect detection. The surface defect detector is used to test particles X2=40 after cleaning. The distribution of the test particles is as follows: Figure 27 , make sure the brush head is available.

[0204] After long-term process tracking, it was confirmed that the brush head maintenance method provided by the present invention and the methods of Example 3 and Example 4 can achieve a qualified rate of more than 98% for the composite standard requirements of the particle value of the silicon carbide substrate surface.

[0205] The cleaning effects and service lives of the brush heads of Examples 1 to 4 and Comparative Examples 1 to 4 are shown in Table 1.

[0206] Table 1

[0207]

[0208] To sum up, the embodiment of the present invention adopts deionized water soaking, ammonia soaking, and self-rotating overflow cleaning, combined with the method of using hydrogen peroxide and ammonia to perform two-way cleaning on the brush head and the substrate, thereby effectively solving the problem of excessive silicon carbide substrate particles or particle aggregation caused by the material of the brush head itself, effectively reducing the unqualified yield, reducing the time for maintaining the brush head by 50% compared with the original process, and extending the service life of the brush head by at least 1 times, reducing the frequency of downtime caused by replacing the brush head, improving production efficiency, and realizing the high purification and high stability of the brush head into production, which has high practical value.

[0209] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions or improvements made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A maintenance method for improving the performance of a silicon carbide cleaning brush head, characterized in that: The following steps are involved: S1, immersing the brush head in deionized water for a first preset time, rinsing the brush head with flowing deionized water, then immersing the brush head in an ammonia solution a for a second preset time, and then sequentially rinsing with deionized water and self-rotating overflow cleaning to obtain a pretreated brush head; S2, sequentially scrubbing the clean silicon carbide substrate with a hydrogen peroxide solution, a first deionized water, an ammonia solution b, and a second deionized water using the pretreatment brush head, and drying the scrubbed silicon carbide substrate; S3, detecting the number X1 of particles on the surface of the silicon carbide substrate. If X1-X0≤10, the brush head is usable; if X1-X0>10, proceeding to S4; wherein X0 is the initial number of particles on the surface of the clean silicon carbide substrate; S4, sequentially using a hydrogen peroxide solution, a first deionized water, an ammonia solution b and a second deionized water to scrub the scrubbed silicon carbide substrate again with a brush head, and drying to obtain a clean silicon carbide substrate.

2. The maintenance method for improving the performance of a silicon carbide cleaning brush head according to claim 1, characterized in that: In S1, the first preset time is 1.5h~3h; and / or In S1, the time for rinsing the brush head is 3 minutes to 5 minutes; and / or In S1, the second preset time is 0.5h~1h; and / or In S1, the volume of the ammonia solution a is 3 to 5 times the volume of the brush head.

3. The maintenance method for improving the performance of a silicon carbide cleaning brush head according to claim 1, characterized in that: In S1, the ammonia solution a is a mixed solution of concentrated ammonia water with a mass concentration of 27% to 29% and deionized water, wherein the volume ratio of the concentrated ammonia water to the deionized water is 1:8 to 1:12; and / or In S1, deionized water is used for rinsing until the washing liquid becomes neutral, and then overflow cleaning is used; wherein, during overflow cleaning, the rotation speed of the brush head is 100rpm~150rpm, the flow rate of deionized water is 100mL / min~200mL / min, and the overflow time is 5min~10min.

4. The maintenance method for improving the performance of a silicon carbide cleaning brush head according to claim 1, characterized in that: In S2, the number of particles with a particle size of ≥0.3 μm on the surface of the clean silicon carbide substrate is ≤10, and there is no particle aggregation; and / or In S2 and S4, the rotation speed of the brush head is 100 r / min~120 r / min during the entire brushing process.

5. The maintenance method for improving the performance of a silicon carbide cleaning brush head according to claim 1, characterized in that: In S2 and S4, the hydrogen peroxide solution is a mixed solution of hydrogen peroxide with a mass concentration of 28% to 32% and deionized water, wherein the volume ratio of the hydrogen peroxide to the deionized water is 1:50 to 1:200; and / or In S2 and S4, the ammonia solution b is a mixed solution of concentrated ammonia water with a mass concentration of 27% to 29% and deionized water, wherein the volume ratio of the concentrated ammonia water to the deionized water is 1:3.5 to 1:

6.

6. The maintenance method for improving the performance of a silicon carbide cleaning brush head according to claim 1 or 5, characterized in that: In S2, the scrubbing time of the hydrogen peroxide solution is 20s-40s, and the rotation speed of the clean silicon carbide substrate during the scrubbing process is 550r / min-800r / min.

7. The maintenance method for improving the performance of a silicon carbide cleaning brush head according to claim 1 or 5, characterized in that: In S2, the scrubbing time of the ammonia solution b is 20s-45s, and the rotation speed of the clean silicon carbide substrate during the scrubbing process is 300r / min-500r / min.

8. The maintenance method for improving the performance of a silicon carbide cleaning brush head according to claim 1, characterized in that: In S2 and S4, the scrubbing time of the first deionized water is 10s to 30s, and the rotation speed of the clean silicon carbide substrate during the scrubbing process is 550r / min to 800r / min; and / or In S2 and S4, the scrubbing time of the second deionized water is 10s-20s, and the rotation speed of the clean silicon carbide substrate during the scrubbing process is 300r / min-500r / min.

9. The maintenance method for improving the performance of a silicon carbide cleaning brush head according to claim 1 or 5, characterized in that: In S4, the scrubbing time of the hydrogen peroxide solution is 30s to 60s, and the rotation speed of the clean silicon carbide substrate during the scrubbing process is 550r / min to 800r / min.

10. The maintenance method for improving the performance of a silicon carbide cleaning brush head according to claim 1 or 5, characterized in that: In S4, the scrubbing time of the ammonia solution b is 30s-70s, and the rotation speed of the clean silicon carbide substrate during the scrubbing process is 300r / min-500r / min.

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