A pressure-adjustable dual-frequency ultrasonic-assisted semiconductor chemical mechanical polishing device

Abstract

The present invention relates to the field of semiconductor chemical mechanical polishing technology, specifically a pressure-adjustable dual-frequency ultrasonic-assisted semiconductor chemical mechanical polishing device. The device comprises a turntable, on the upper surface of which a tray, a lower vibration plate, an upper vibration plate, a magnetic sheet, and a polishing pad are stacked and fixed in sequence from bottom to top. A piezoelectric ceramic sheet is fixed in the middle of the lower surface of the upper vibration plate. A retaining sleeve is eccentrically positioned on the upper surface of the polishing pad. A threaded sleeve is threadedly connected to the upper end of the outer surface of the retaining sleeve. A shock-absorbing spring is fixed to the outer top surface of the threaded sleeve. A support sheet is fixed to the upper end of the shock-absorbing spring. The inner ring of a second electric slip ring is fixed to the upper surface of the support sheet. A transmission shaft is fixedly mounted within the inner ring of the second electric slip ring. A clamping sleeve is fixed to the lower end of the transmission shaft. An ultrasonic vibrator is fixedly mounted within the clamping sleeve. The device solves the problems of existing semiconductor chemical mechanical polishing technologies, such as slow polishing speed, poor surface quality after polishing, and low polishing pass rate, and is suitable for semiconductor chemical mechanical polishing.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor chemical mechanical polishing, in particular to a pressure-adjustable dual-frequency ultrasonic assisted semiconductor chemical mechanical polishing device. Background Art

[0002] Semiconductor chemical mechanical polishing is widely used in the field of integrated circuits and is an indispensable and important link in the chip manufacturing process. However, in actual applications, the existing semiconductor chemical mechanical polishing technology has the following problems due to the structural limitations of the polishing device: First, in the existing semiconductor chemical mechanical polishing technology, the polishing device can only perform single-frequency ultrasonic vibration, which leads to a slow polishing speed and poor surface quality after polishing. Second, in the existing semiconductor chemical mechanical polishing technology, the polishing device cannot adjust the polishing pressure, which easily causes over-polishing due to excessive polishing pressure, or under-polishing due to insufficient polishing pressure, resulting in a low polishing pass rate. Based on this, it is necessary to invent a pressure-adjustable dual-frequency ultrasonic-assisted semiconductor chemical mechanical polishing device to solve the problems of slow polishing speed, poor surface quality after polishing, and low polishing pass rate in the existing semiconductor chemical mechanical polishing technology. Summary of the Invention

[0003] In order to solve the problems of slow polishing speed, poor surface quality after polishing and low polishing qualification rate in existing semiconductor chemical mechanical polishing technology, the present invention provides a pressure-adjustable dual-frequency ultrasonic assisted semiconductor chemical mechanical polishing device.

[0004] The present invention is achieved by adopting the following technical solutions:

[0005] A pressure-adjustable dual-frequency ultrasonic-assisted semiconductor chemical mechanical polishing device comprises a turntable; the turntable plate faces upward, and a tray, a lower vibration plate, an upper vibration plate, a magnetic sheet, and a polishing pad are stacked and fixed to the upper surface of the turntable plate in order from bottom to top; the upper surface of the lower vibration plate and the lower surface of the upper vibration plate are both annular stepped surfaces with a lower center and higher edges, and a piezoelectric ceramic sheet is fixed to the center of the lower surface of the upper vibration plate; a positioning clamping frame is fixed to the upper surface of the turntable housing; a cylindrical retaining sleeve is eccentrically placed on the upper surface of the polishing pad, and the retaining sleeve is rotatably clamped in the positioning clamping frame; a threaded sleeve with a cup-shaped structure and a cup opening facing downward is threadedly connected to the upper end of the outer surface of the retaining sleeve; a shock-absorbing spring is fixed to the outer top surface of the threaded sleeve; and a support sheet is fixed to the upper end of the shock-absorbing spring.

[0006] The device further comprises a support frame, a first electric slip ring, a second electric slip ring, a first wire, a second wire, a third wire, a fourth wire, a high-frequency ultrasonic generator, and a low-frequency ultrasonic generator; the outer ring of the first electric slip ring is fixed to the support frame and electrically connected to the high-frequency ultrasonic generator via the first wire; the inner ring of the first electric slip ring is electrically connected to the piezoelectric ceramic sheet via the second wire, and the second wire simultaneously passes through the polishing pad, the magnetic sheet, and the upper vibration plate; the outer ring of the second electric slip ring is electrically connected to the low-frequency ultrasonic generator via the third wire; the inner ring of the second electric slip ring is fixed to the upper surface of the support sheet; a transmission shaft is fixedly mounted within the inner ring of the second electric slip ring, and the lower end of the transmission shaft passes through the support sheet, the shock-absorbing spring, and the threaded sleeve in sequence and extends into the retaining sleeve; a cup-shaped clamping sleeve with a cup opening facing downward is fixed to the lower end of the transmission shaft; an ultrasonic vibrator is fixedly mounted within the clamping sleeve with a downwardly facing vibration surface; a carrier plate is fixed to the vibration surface of the ultrasonic vibrator; the inner ring of the second electric slip ring is electrically connected to the ultrasonic vibrator via a fourth wire, and the fourth wire passes through the retaining sleeve.

[0007] Furthermore, the high-frequency ultrasonic generator is a megahertz ultrasonic generator; and the low-frequency ultrasonic generator is a kilohertz ultrasonic generator.

[0008] Furthermore, a threading hole is provided through the surface of the upper vibration plate; a threading convex tube is extended from the edge of the upper end of the threading hole; a first adapter hole is provided through the surface of the magnetic sheet for the threading convex tube to pass through; a second adapter hole is provided through the surface of the polishing pad for the threading convex tube to pass through; and the second wire passes through the threading convex tube and the threading hole at the same time.

[0009] Furthermore, a third adapter hole is provided through the top wall of the threaded sleeve; a fourth adapter hole is provided through the surface of the support plate; a positioning convex tube is extended from the lower surface of the support plate, and the positioning convex tube is passed through the shock-absorbing spring; the lower end of the transmission shaft passes through the fourth adapter hole, the positioning convex tube, and the third adapter hole in sequence and extends into the retaining sleeve.

[0010] Furthermore, a hollow hole is provided through the middle of the side wall of the retaining sleeve; the fourth wire passes through the hollow hole; and a notch is provided through the lower end of the side wall of the retaining sleeve.

[0011] Furthermore, a blind screw hole is provided on the vibration surface of the ultrasonic vibrator; a threaded boss is extended from the upper surface of the carrier plate, and the threaded boss is screwed into the blind screw hole.

[0012] Furthermore, the positioning clamping frame includes a vertical shaft fixed to the upper surface of the turntable shell; a positioning arm is fixedly installed on the side of the vertical shaft; a positioning wheel shaft is fixedly passed through the tail end of the positioning arm; a positioning roller is rotatably installed on the side of the positioning wheel shaft; a hinge shaft is fixedly passed through the middle of the positioning arm; a clamping arm is fixedly installed on the side of the hinge shaft; a clamping wheel shaft is fixedly passed through the tail end of the clamping arm; a clamping roller is rotatably installed on the side of the clamping wheel shaft; and the retaining sleeve is rotatably clamped between the positioning roller and the clamping roller.

[0013] Furthermore, the hinge shaft is a bolt; a strip hole is opened through the surface of the clamping arm, and the clamping arm is assembled on the side of the bolt through the strip hole; the head of the bolt presses the clamping arm tightly.

[0014] Furthermore, the support frame includes a base plate located next to the turntable; a column is fixed on the upper surface of the base plate; a beam is fixed on the side of the column; the outer ring of the first electric slip ring is fixed to the tail end of the beam; four anchor bolts are screwed through the four corners of the base plate in a one-to-one correspondence.

[0015] Furthermore, there are multiple piezoelectric ceramic sheets, and the piezoelectric ceramic sheets are arranged in an array.

[0016] Compared to existing semiconductor chemical mechanical polishing technologies, the pressure-adjustable dual-frequency ultrasonic-assisted semiconductor chemical mechanical polishing device described in the present invention, through its novel structure, offers the following advantages: First, the device is capable of dual-frequency ultrasonic composite vibration (high-frequency ultrasonic vibration and low-frequency ultrasonic vibration). This utilizes the high-frequency acoustic streaming effect induced by the high-frequency ultrasonic vibration to significantly improve the mass transfer efficiency and chemical reaction rate of the polishing liquid. Furthermore, it utilizes the intense cavitation effect induced by the low-frequency ultrasonic vibration to significantly increase the mechanical removal rate, thereby significantly improving the polishing speed and post-polishing surface quality. Second, by adjusting the polishing pressure (i.e., the contact pressure between the semiconductor material and the polishing pad), the device effectively avoids over-polishing due to excessive polishing pressure and under-polishing due to insufficient polishing pressure, thereby effectively improving the polishing yield.

[0017] The invention effectively solves the problems of slow polishing speed, poor surface quality after polishing and low polishing qualification rate in the existing semiconductor chemical mechanical polishing technology, and is suitable for semiconductor chemical mechanical polishing. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a structural schematic diagram of the present invention.

[0019] Figure 2 yes Figure 1 Partial structure diagram Figure 1 .

[0020] Figure 3 yes Figure 2 Partial structure diagram Figure 1 .

[0021] Figure 4 yes Figure 2 Partial structure diagram Figure 2 .

[0022] Figure 5 yes Figure 4 Partial structure diagram Figure 1 .

[0023] Figure 6 yes Figure 5 Partial structure diagram Figure 1 .

[0024] Figure 7 yes Figure 5 Partial structure diagram Figure 2 .

[0025] Figure 8 yes Figure 7 Schematic diagram of the structure from another angle.

[0026] Figure 9 yes Figure 4 Partial structure diagram Figure 2 .

[0027] Figure 10 yes Figure 9 Schematic diagram of the structure from another angle.

[0028] Figure 11 yes Figure 2 Partial structure diagram Figure 3 .

[0029] Figure 12 yes Figure 11 Partial structure diagram Figure 1 .

[0030] Figure 13 yes Figure 12 Partial structure diagram Figure 1 .

[0031] Figure 14 yes Figure 13 Schematic diagram of the structure from another angle.

[0032] Figure 15 yes Figure 12 Partial structure diagram Figure 2 .

[0033] Figure 16 yes Figure 15 Schematic diagram of the structure from another angle.

[0034] Figure 17 yes Figure 12 Partial structure diagram Figure 3 .

[0035] Figure 18 yes Figure 17 Schematic diagram of the structure from another angle.

[0036] Figure 19 yes Figure 11 Partial structure diagram Figure 2 .

[0037] Figure 20 yes Figure 19 Schematic diagram of the structure from another angle.

[0038] Figure 21 yes Figure 19 Partial structure diagram Figure 1 .

[0039] Figure 22 yes Figure 21 Schematic diagram of the structure from another angle.

[0040] Figure 23 yes Figure 19 Partial structure diagram Figure 2 .

[0041] Figure 24 yes Figure 23 Schematic diagram of the structure from another angle.

[0042] Figure 25 yes Figure 19 Partial structure diagram Figure 3 .

[0043] Figure 26 yes Figure 25 Schematic diagram of the structure from another angle.

[0044] Figure 27 yes Figure 2 Partial structure diagram Figure 4 .

[0045] Figure 28 yes Figure 1 Partial structure diagram Figure 2 .

[0046] In the figure: 1-turntable plate, 2-tray, 3-lower vibration plate, 3.1-lower pin hole, 4-upper vibration plate, 4.1-threading hole, 4.2-threading convex tube, 4.3-upper pin hole, 5-magnetic sheet, 5.1-first adapter hole, 6-polishing pad, 6.1-second adapter hole, 7-piezoelectric ceramic sheet, 8-turntable housing, 9-holding sleeve, 9.1-hollow hole, 9.2-notch, 10-threaded sleeve, 10.1-third adapter hole, 10.2-limiting convex ring, 11-shock-absorbing spring, 12-support sheet, 12.1-fourth adapter hole, 12.2-positioning convex tube, 13-first wire, 14-second wire, 15-third wire, 16-fourth wire, 17-high-frequency ultrasonic generator Generator, 18-low-frequency ultrasonic generator, 19-outer ring of the first electric slip ring, 20-inner ring of the first electric slip ring, 21-outer ring of the second electric slip ring, 22-inner ring of the second electric slip ring, 23-transmission shaft, 24-clamping sleeve, 24.1-through screw hole, 25-ultrasonic vibrator, 25.1-blind screw hole, 26-carrying plate, 26.1-threaded boss, 27-vertical shaft, 28-positioning arm, 29-positioning wheel shaft, 30-positioning roller, 31-hinge shaft, 32-clamping arm, 32.1-bar hole, 33-clamping wheel shaft, 34-clamping roller, 35-bottom plate, 36-vertical column, 37-crossbeam, 38-anchor bolt, 39-first clamp, 40-second clamp, 41-hoist. DETAILED DESCRIPTION

[0047] A pressure-adjustable dual-frequency ultrasonic-assisted semiconductor chemical mechanical polishing device comprises a turntable; a turntable plate 1 faces upward, and a tray 2, a lower vibration plate 3, an upper vibration plate 4, a magnetic sheet 5, and a polishing pad 6 are stacked and fixed to the upper surface of the turntable plate 1 in order from bottom to top; the upper surface of the lower vibration plate 3 and the lower surface of the upper vibration plate 4 are both annular stepped surfaces with a lower center and higher sides, and a piezoelectric ceramic sheet 7 is fixed to the middle of the lower surface of the upper vibration plate 4; a positioning clamping frame is fixed to the upper surface of the turntable housing 8; a cylindrical retaining sleeve 9 is eccentrically placed on the upper surface of the polishing pad 6, and the retaining sleeve 9 is rotatably clamped in the positioning clamping frame; a threaded sleeve 10 with a cup-shaped structure and a cup mouth facing downward is threadedly connected to the upper end of the outer surface of the retaining sleeve 9; a shock-absorbing spring 11 is fixed to the outer top surface of the threaded sleeve 10; and a support sheet 12 is fixed to the upper end of the shock-absorbing spring 11;

[0048] The device further includes a support frame, a first electric slip ring, a second electric slip ring, a first wire 13, a second wire 14, a third wire 15, a fourth wire 16, a high-frequency ultrasonic generator 17, and a low-frequency ultrasonic generator 18; an outer ring 19 of the first electric slip ring is fixed to the support frame, and the outer ring 19 of the first electric slip ring is electrically connected to the high-frequency ultrasonic generator 17 through the first wire 13; an inner ring 20 of the first electric slip ring is electrically connected to the piezoelectric ceramic piece 7 through the second wire 14, and the second wire 14 simultaneously passes through the polishing pad 6, the magnetic piece 5, and the upper vibration plate 4; an outer ring 21 of the second electric slip ring is electrically connected to the low-frequency ultrasonic generator 18 through the third wire 15 Electrical connection; the inner ring 22 of the second electric slip ring is fixed to the upper surface of the support plate 12; a transmission shaft 23 is fixedly installed in the inner ring 22 of the second electric slip ring, and the lower end of the transmission shaft 23 passes through the support plate 12, the shock-absorbing spring 11, and the threaded sleeve 10 in sequence and extends into the retaining sleeve 9; a clamping sleeve 24 with a cup-shaped structure and the cup mouth facing downward is fixed to the lower end of the transmission shaft 23; an ultrasonic vibrator 25 with its vibrating surface facing downward is fixedly installed in the clamping sleeve 24; a carrier plate 26 is fixed to the vibrating surface of the ultrasonic vibrator 25; the inner ring 22 of the second electric slip ring is electrically connected to the ultrasonic vibrator 25 through a fourth wire 16, and the fourth wire 16 passes through the retaining sleeve 9.

[0049] During operation, polishing liquid is applied to the upper surface of the polishing pad 6. Semiconductor material is adhered to the lower surface of the carrier plate 26, and the semiconductor material contacts the upper surface of the polishing pad 6.

[0050] The specific operating process is as follows: First, the turntable is activated, causing its platen 1 to rotate, driving the tray 2, lower vibration plate 3, upper vibration plate 4, magnetic sheet 5, polishing pad 6, piezoelectric ceramic sheet 7, second conductor 14, and the inner ring 20 of the first electric slip ring to rotate. Due to the friction between the retaining sleeve 9 and the polishing pad 6, the polishing pad 6 drives the retaining sleeve 9 to rotate within the positioning clamping frame. The retaining sleeve 9 then drives the threaded sleeve 10, shock-absorbing spring 11, support sheet 12, the inner ring 22 of the second electric slip ring, transmission shaft 23, clamping sleeve 24, ultrasonic vibrator 25, carrier plate 26, and semiconductor material to rotate, thereby causing the semiconductor material to rub against the polishing pad 6. Then, the high-frequency ultrasonic generator 17 and the low-frequency ultrasonic generator 18 are activated. The high-frequency ultrasonic generator 17 converts the mains power into an ultrasonic-frequency alternating current signal, which is then transmitted to the piezoelectric ceramic 7 via the first conductor 13, the outer ring 19 of the first electric slip ring, the inner ring 20 of the first electric slip ring, and the second conductor 14. The piezoelectric ceramic 7 converts the ultrasonic-frequency alternating current signal into high-frequency ultrasonic vibration, thereby causing the upper vibration plate 4, the magnetic plate 5, the polishing pad 6, and the lower vibration plate 3 to vibrate at high frequency ultrasonically. The low-frequency ultrasonic generator 18 converts the mains power into an ultrasonic-frequency alternating current signal, which is then transmitted to the ultrasonic vibrator 25 via the third conductor 15, the outer ring 21 of the second electric slip ring, the inner ring 22 of the second electric slip ring, and the fourth conductor 16. The ultrasonic vibrator 25 converts the ultrasonic-frequency alternating current signal into low-frequency ultrasonic vibration, thereby causing the carrier plate 26, the semiconductor material, the clamping sleeve 24, the transmission shaft 23, the inner ring 22 of the second electric slip ring, the support plate 12, and the shock-absorbing spring 11 to vibrate at low frequency ultrasonically.

[0051] Based on the friction between the semiconductor material and the polishing pad 6, and in conjunction with the polishing slurry, chemical mechanical polishing of the semiconductor material is achieved. During the polishing process, high-frequency ultrasonic vibrations induce a high-frequency acoustic streaming effect in the polishing slurry, while low-frequency ultrasonic vibrations induce a violent cavitation effect in the polishing slurry. The high-frequency acoustic streaming effect significantly improves the mass transfer efficiency and chemical reaction rate of the polishing slurry. The high-energy shock waves and microjets generated by the violent cavitation effect significantly increase the mechanical removal rate. This significant improvement in the polishing slurry's mass transfer efficiency, chemical reaction rate, and mechanical removal rate significantly improves the polishing speed and surface quality after polishing.

[0052] During the above process, the polishing pressure (i.e., the contact pressure between the semiconductor material and the polishing pad 6) can be adjusted by rotating the threaded sleeve 10. The specific adjustment process is as follows: When the threaded sleeve 10 is rotated in the forward direction, it descends, driving the damping spring 11, support plate 12, inner ring 22 of the second electric slip ring, transmission shaft 23, clamping sleeve 24, ultrasonic vibrator 25, carrier plate 26, and semiconductor material downward, thereby increasing the polishing pressure. When the threaded sleeve 10 is rotated in the reverse direction, it ascends, driving the damping spring 11, support plate 12, inner ring 22 of the second electric slip ring, transmission shaft 23, clamping sleeve 24, ultrasonic vibrator 25, carrier plate 26, and semiconductor material upward, thereby decreasing the polishing pressure.

[0053] The high-frequency ultrasonic generator 17 is a megahertz ultrasonic generator; the low-frequency ultrasonic generator 18 is a kilohertz ultrasonic generator.

[0054] A threading hole 4.1 is formed through the surface of the upper vibration plate 4; a threading convex tube 4.2 is extended from the upper end edge of the threading hole 4.1; a first adapter hole 5.1 for the threading convex tube 4.2 to pass through is formed through the surface of the magnetic sheet 5; a second adapter hole 6.1 for the threading convex tube 4.2 to pass through is formed through the surface of the polishing pad 6; and the second wire 14 passes through both the threading convex tube 4.2 and the threading hole 4.1.

[0055] A third adapter hole 10.1 is formed through the top wall of the threaded sleeve 10; a fourth adapter hole 12.1 is formed through the surface of the support plate 12; a positioning protrusion 12.2 is extended from the lower surface of the support plate 12, and the positioning protrusion 12.2 is inserted into the shock-absorbing spring 11; the lower end of the transmission shaft 23 passes through the fourth adapter hole 12.1, the positioning protrusion 12.2, and the third adapter hole 10.1 in sequence and extends into the retaining sleeve 9.

[0056] A hollow hole 9.1 is formed through the middle of the side wall of the retaining sleeve 9, through which the fourth conductor 16 passes, and a notch 9.2 is formed through the lower end of the side wall of the retaining sleeve 9. During operation, polishing liquid can be added to the retaining sleeve 9 through the notch 9.2.

[0057] The vibration surface of the ultrasonic vibrator 25 is provided with a blind screw hole 25.1; the upper surface of the loading plate 26 is provided with a threaded boss 26.1, and the threaded boss 26.1 is screwed into the blind screw hole 25.1. During operation, this design allows for quick replacement of the loading plate 26.

[0058] The positioning clamping frame includes a vertical shaft 27 fixed to the upper surface of the turntable housing 8; a positioning arm 28 is fixedly mounted on the side of the vertical shaft 27; a positioning axle 29 is fixedly inserted through the tail end of the positioning arm 28; a positioning roller 30 is rotatably mounted on the side of the positioning axle 29; a hinge shaft 31 is fixedly inserted through the middle of the positioning arm 28; a clamping arm 32 is fixedly mounted on the side of the hinge shaft 31; a clamping axle 33 is fixedly inserted through the tail end of the clamping arm 32; a clamping roller 34 is rotatably mounted on the side of the clamping axle 33; a retaining sleeve 9 is rotatably clamped between the positioning roller 30 and the clamping roller 34. During operation, the retaining sleeve 9 drives the positioning roller 30 and the clamping roller 34 to rotate together.

[0059] The hinge shaft 31 is a bolt; a slot 32.1 is formed through the surface of the clamping arm 32, which is assembled onto the side of the bolt through the slot 32.1; the head of the bolt presses against the clamping arm 32. This design allows the distance between the positioning roller 30 and the clamping roller 34 to be adjusted during operation, thereby adapting to retaining sleeves 9 of different diameters.

[0060] The support frame includes a base plate 35 located next to the turntable; a column 36 is fixed to the top surface of the base plate 35; a crossbeam 37 is fixed to the side of the column 36; the outer ring 19 of the first electric slip ring is fixed to the end of the crossbeam 37; and four anchor bolts 38 are screwed through the four corners of the base plate 35. During operation, the anchor bolts 38 can be used to adjust the position of the base plate 35.

[0061] There are multiple piezoelectric ceramic sheets 7, and each piezoelectric ceramic sheet 7 is arranged in an array. During operation, this design can ensure uniform energy distribution during high-frequency ultrasonic vibration and avoid material damage caused by local energy concentration.

[0062] In specific implementation, the tray 2 and the lower vibration plate 3 are fixed by multiple first clamps 39; the surface of the lower vibration plate 3 is provided with multiple lower pin holes 3.1, and the surface of the upper vibration plate 4 is provided with multiple upper pin holes 4.3. The lower vibration plate 3 and the upper vibration plate 4 are fixed by multiple pins inserted into the multiple lower pin holes 3.1 and the multiple upper pin holes 4.3; the retaining sleeve 9 is a three-level stepped cylindrical structure; the number of hollow holes 9.1 and the number of notches 9.2 are both multiple; the outer surface of the threaded sleeve 10 A limiting convex ring 10.2 is extended from the edge of the top surface; a plurality of through screw holes 24.1 are formed through the side wall of the clamping sleeve 24, and the ultrasonic vibrator 25 is fixedly assembled in the clamping sleeve 24 by a plurality of fastening bolts screwed into the plurality of through screw holes 24.1; the number of positioning clamps is two; the beam 37 is fixed to the side of the column 36 in a liftable manner by a second clamp 40; the outer ring 19 of the first electric slip ring is detachably fixed to the tail end of the beam 37 by a hanger 41.

[0063] Although specific embodiments of the present invention have been described above, those skilled in the art will appreciate that these are merely illustrative and that the scope of the present invention is defined by the appended claims. Those skilled in the art may make various changes or modifications to these embodiments without departing from the principles and essence of the present invention, and such changes and modifications are intended to fall within the scope of the present invention.

Claims

1. A pressure-adjustable dual-frequency ultrasonic-assisted semiconductor chemical mechanical polishing device, characterized by: The invention comprises a turntable; the turntable plate (1) faces upward, and the upper surface of the turntable plate (1) is stacked and fixed with a tray (2), a lower vibration plate (3), an upper vibration plate (4), a magnetic sheet (5), and a polishing pad (6) in sequence from bottom to top; the upper surface of the lower vibration plate (3) and the lower surface of the upper vibration plate (4) are both annular stepped surfaces with a lower middle and higher sides, and a piezoelectric ceramic sheet (7) is fixed in the middle of the lower surface of the upper vibration plate (4); a positioning clamping frame is fixed on the upper surface of the outer shell (8); a holding sleeve (9) with a cylindrical structure is eccentrically placed on the upper surface of the polishing pad (6), and the holding sleeve (9) is rotatably clamped in the positioning clamping frame; the upper end of the outer surface of the holding sleeve (9) is threadedly connected to a threaded sleeve (10) with a cup-shaped structure and a cup mouth facing downward; a shock-absorbing spring (11) is fixed to the outer top surface of the threaded sleeve (10); and a support sheet (12) is fixed to the upper end of the shock-absorbing spring (11); The invention also includes a support frame, a first electric slip ring, a second electric slip ring, a first wire (13), a second wire (14), a third wire (15), a fourth wire (16), a high-frequency ultrasonic generator (17), and a low-frequency ultrasonic generator (18); the outer ring (19) of the first electric slip ring is fixed on the support frame, and the outer ring (19) of the first electric slip ring is electrically connected to the high-frequency ultrasonic generator (17) through the first wire (13); the inner ring (20) of the first electric slip ring is electrically connected to the piezoelectric ceramic sheet (7) through the second wire (14), and the second wire (14) simultaneously passes through the polishing pad (6), the magnetic sheet (5), and the upper vibration plate (4); the outer ring (21) of the second electric slip ring is electrically connected to the low-frequency ultrasonic generator (18) through the third wire (15) Electrical connection; the inner ring (22) of the second electric slip ring is fixed to the upper surface of the support plate (12); a transmission shaft (23) is fixedly assembled in the inner ring (22) of the second electric slip ring, and the lower end of the transmission shaft (23) passes through the support plate (12), the shock-absorbing spring (11), and the threaded sleeve (10) in sequence and extends into the retaining sleeve (9); a clamping sleeve (24) with a cup-shaped structure and a cup opening facing downward is fixed at the lower end of the transmission shaft (23); an ultrasonic vibrator (25) with a vibration surface facing downward is fixedly assembled in the clamping sleeve (24); a carrier plate (26) is fixed to the vibration surface of the ultrasonic vibrator (25); the inner ring (22) of the second electric slip ring is electrically connected to the ultrasonic vibrator (25) through a fourth wire (16), and the fourth wire (16) passes through the retaining sleeve (9).

2. The pressure-adjustable dual-frequency ultrasonic-assisted semiconductor chemical mechanical polishing device according to claim 1, characterized in that: The high-frequency ultrasonic generator (17) is a megahertz ultrasonic generator; the low-frequency ultrasonic generator (18) is a kilohertz ultrasonic generator.

3. The pressure-adjustable dual-frequency ultrasonic-assisted semiconductor chemical mechanical polishing device according to claim 1, characterized in that: A threading hole (4.1) is provided through the surface of the upper vibration plate (4); a threading convex tube (4.2) is provided extending from the upper end opening edge of the threading hole (4.1); a first adapting hole (5.1) for the threading convex tube (4.2) to pass through is provided through the surface of the magnetic sheet (5); a second adapting hole (6.1) for the threading convex tube (4.2) to pass through is provided through the surface of the polishing pad (6); and a second wire (14) passes through both the threading convex tube (4.2) and the threading hole (4.1).

4. The pressure-adjustable dual-frequency ultrasonic-assisted semiconductor chemical mechanical polishing device according to claim 1, characterized in that: A third adapter hole (10.1) is formed through the top wall of the threaded sleeve (10); a fourth adapter hole (12.1) is formed through the surface of the support plate (12); a positioning convex tube (12.2) is extended from the lower surface of the support plate (12), and the positioning convex tube (12.2) is inserted into the shock-absorbing spring (11); and the lower end of the transmission shaft (23) passes through the fourth adapter hole (12.1), the positioning convex tube (12.2), and the third adapter hole (10.1) in sequence and extends into the retaining sleeve (9).

5. The pressure-adjustable dual-frequency ultrasonic-assisted semiconductor chemical mechanical polishing device according to claim 1, characterized in that: A hollow hole (9.1) is provided through the middle of the side wall of the retaining sleeve (9); the fourth wire (16) passes through the hollow hole (9.1); and a notch (9.2) is provided through the lower end of the side wall of the retaining sleeve (9).

6. The pressure-adjustable dual-frequency ultrasonic-assisted semiconductor chemical mechanical polishing device according to claim 1, characterized in that: A blind screw hole (25.1) is provided on the vibration surface of the ultrasonic vibrator (25); a threaded boss (26.1) is extended from the upper surface of the loading plate (26), and the threaded boss (26.1) is screwed into the blind screw hole (25.1).

7. The pressure-adjustable dual-frequency ultrasonic-assisted semiconductor chemical mechanical polishing device according to claim 1, characterized in that: The positioning clamping frame comprises a vertical shaft (27) fixed to the upper surface of the housing (8) of the turntable; a positioning arm (28) is fixedly mounted on the side of the vertical shaft (27); a positioning wheel shaft (29) is fixedly passed through the tail end of the positioning arm (28); a positioning roller (30) is rotatably mounted on the side of the positioning wheel shaft (29); a hinge shaft (31) is fixedly passed through the middle of the positioning arm (28); a clamping arm (32) is fixedly mounted on the side of the hinge shaft (31); a clamping wheel shaft (33) is fixedly passed through the tail end of the clamping arm (32); a clamping roller (34) is rotatably mounted on the side of the clamping wheel shaft (33); and a retaining sleeve (9) is rotatably clamped between the positioning roller (30) and the clamping roller (34).

8. The pressure-adjustable dual-frequency ultrasonic-assisted semiconductor chemical mechanical polishing device according to claim 7, characterized in that: The hinge shaft (31) is a bolt; a strip hole (32.1) is provided through the surface of the clamping arm (32), and the clamping arm (32) is assembled on the side of the bolt through the strip hole (32.1); the head of the bolt presses the clamping arm (32).

9. The pressure-adjustable dual-frequency ultrasonic-assisted semiconductor chemical mechanical polishing device according to claim 1, characterized in that: The support frame includes a base plate (35) located beside the turntable; a column (36) is fixed on the upper surface of the base plate (35); a beam (37) is fixed on the side of the column (36); the outer ring (19) of the first electric slip ring is fixed to the tail end of the beam (37); and four anchor bolts (38) are screwed through the four corners of the base plate (35) in a one-to-one correspondence.

10. The pressure-adjustable dual-frequency ultrasonic-assisted semiconductor chemical mechanical polishing device according to claim 1, characterized in that: There are a plurality of piezoelectric ceramic sheets (7), and the piezoelectric ceramic sheets (7) are arranged in an array.

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