Filter with three-dimensional capacitor structure and manufacturing method thereof

Abstract

The invention discloses a filter with a three-dimensional capacitor structure and a manufacturing method thereof. The filter comprises the three-dimensional capacitor structure and a three-dimensional inductor structure which are arranged on a glass substrate, and the three-dimensional capacitor structure and the three-dimensional inductor structure are mutually connected to form a filter circuit. The three-dimensional capacitor structure comprises a pair of electrode plates, a pair of metal bonding pads and a dielectric layer, the dielectric layer is formed after the glass through groove is manufactured, the dielectric layer is of a partial glass substrate structure between the through groove provided with the pair of electrode plates, and the electrode plates and the metal bonding pads are of an integrally formed structure; the three-dimensional inductor structure is formed by sequentially connecting a plurality of metal columns, a plurality of surface connecting pieces and a plurality of back connecting pieces end to end. According to the three-dimensional capacitor structure, the occupied area of the filter is greatly reduced, the capacitor density is improved through the three-dimensional structure, the high breakdown voltage resistance characteristic of the capacitor is enhanced through the glass dielectric layer, and the overall performance and reliability of the filter are greatly improved by combining the three-dimensional inductor structure with a high Q value.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and primarily to a filter with a three-dimensional capacitor structure and a method for manufacturing the same. Background Art

[0002] A filter is a frequency-selective device, a filtering circuit composed of capacitors, inductors, and resistors. It allows specific frequency components in a signal to pass while significantly attenuating other frequency components. With the continuous innovation of electronic technology, electronic systems are showing a trend towards miniaturization, high performance, low power consumption, and low cost. This also applies to miniaturized and integrated filters.

[0003] However, current filter designs mostly use a planar structure, using planar spiral inductors and planar capacitors to form a lumped filter. This results in a large filter area, especially when using large capacitors, such as MIM capacitors. The size of a MIM capacitor is directly related to its area, so achieving large planar capacitors requires a large area. Furthermore, MIM capacitors have low capacitance density and are prone to thin film breakdown, making them unsuitable for high-power devices.

[0004] Therefore, it is of great significance to develop a capacitor with high breakdown voltage characteristics and high capacitance density to achieve miniaturization and integration of filters. Summary of the Invention

[0005] In response to the technical problems in the prior art that MIM capacitors have low capacitance density, easy breakdown of thin films, and are not suitable for high-power devices, this application proposes a filter with a three-dimensional capacitor structure and a manufacturing method thereof.

[0006] According to one aspect of the present invention, a three-dimensional capacitor structure is proposed, which is arranged on a glass substrate; the three-dimensional capacitor structure includes a pair of electrode plates, a pair of metal pads and a dielectric layer; the glass substrate is provided with a plurality of through-slots with rectangular notches, the dielectric layer is formed after the through-slots are formed, the electrode plates are formed by filling the through-slots with metal, the dielectric layer is located between the pair of electrode plates, the dielectric layer itself is part of the glass substrate, and the dielectric layer and the glass substrate are integrally formed; the through-slot notches are machined with recessed structures relative to the edges of the dielectric layer, the metal pads are formed by filling the recessed structures with metal; the electrode plates and the metal pads are integrally formed.

[0007] This solution significantly reduces the footprint of the capacitor structure, not only increasing the capacitance density through the three-dimensional structure, but also enhancing the capacitor's high breakdown voltage resistance through the glass dielectric layer, making it suitable for high-power devices. Furthermore, the glass dielectric layer not only provides excellent insulation properties but also simplifies the manufacturing process. This three-dimensional capacitor structure not only meets the demands of modern electronic systems for miniaturization, high performance, low power consumption, and low cost, but also promotes the further development of filter technology.

[0008] Preferably, the dielectric layer is formed before the electrode plates. This dielectric layer can be formed after the through-grooves are fabricated. The glass wall between the two through-grooves serves as the dielectric layer. The dielectric layer itself is part of the glass substrate, eliminating the need for additional steps to fabricate the dielectric layer. This significantly simplifies the process and improves production efficiency. Furthermore, the dielectric layer and glass substrate are integrally molded, significantly enhancing the stability and reliability of the capacitor structure.

[0009] Preferably, the through-slots are arranged parallel to the long sides of the notches. This design makes the spacing between adjacent electrode plates uniform, further improving the stability and consistency of the capacitor. At the same time, the side-by-side through-slots also make the layout of the capacitor structure more compact, further optimizing the capacitor's footprint. In addition, by precisely controlling the side-by-side spacing of the through-slots, the electrical performance of the capacitor can be further fine-tuned to meet the needs of different application scenarios.

[0010] Preferably, the surface of the glass substrate is flat; the surfaces of the electrode plate and the metal pad are flush with the surface of the glass substrate. This design ensures that the surface of the three-dimensional capacitor structure remains flat after fabrication, preventing the protrusion of the electrode plate and metal pad from affecting subsequent processing or causing physical damage. Furthermore, the flush surface helps improve the reliability of the interconnection between the capacitor and other electronic components, reducing the risk of performance degradation or failure due to poor contact.

[0011] Preferably, the bottom of the recessed structure is flat. By ensuring the flatness of the bottom of the recessed structure, fluctuations in capacitor performance or failure caused by an uneven bottom can be effectively avoided. Furthermore, a flat bottom helps optimize contact between the capacitor and the glass substrate, further improving the overall performance and durability of the capacitor.

[0012] According to a second aspect of the present invention, a filter having a three-dimensional capacitor structure is provided.

[0013] Preferably, the filter also includes a three-dimensional inductor structure comprising metal pillars, surface connectors, and back connectors. The metal pillars extend vertically through the glass substrate, with their ends flush with the surface and back of the glass substrate, respectively. The surface connectors sequentially connect to the upper ends of the metal pillars, and the back connectors sequentially connect to the lower ends of the metal pillars, forming a spiral three-dimensional capacitor structure. This design not only further improves the filter's integration but also increases the inductance value.

[0014] Preferably, the three-dimensional capacitor structure and the three-dimensional inductor structure form a filter circuit through an interconnected circuit. The design of interconnecting the three-dimensional capacitor structure and the three-dimensional inductor structure enables the filter to simultaneously utilize the characteristics of capacitance and inductance to achieve more complex filtering functions. In addition, the integrated design of the three-dimensional capacitor structure and the three-dimensional inductor structure also greatly reduces the volume of the filter, improves its space utilization, makes the filter more compact and lightweight, and is easy to integrate and use in various electronic devices.

[0015] Further preferably, the three-dimensional capacitor structure is interconnected to the filter circuit via the metal pad. This design ensures the stability and reliability of the connection between the capacitor and the filter circuit, simplifies the connection steps between the three-dimensional capacitor structure and the filter circuit, and improves production efficiency. At the same time, this connection method does not affect the performance of the capacitor.

[0016] Further preferably, it also includes a surface insulating layer and a back insulating layer, wherein the surface insulating layer wraps the surface of the glass substrate, the interconnection circuit and the surface connector; the back insulating layer wraps the back of the glass substrate and the back connector. The design of the insulating layer further enhances the electrical performance and structural stability of the filter. The surface insulating layer effectively protects the interconnection circuit formed by the three-dimensional capacitor structure and the three-dimensional inductor structure, as well as the surface connector, to prevent interference and damage from the external environment. At the same time, it can also ensure electrical isolation between circuits and improve the safety and reliability of the filter. The back insulating layer comprehensively wraps the back of the glass substrate and the back connector, further improving the overall insulation performance of the filter. This design not only enhances the electrical performance of the filter, but also provides a solid guarantee for its application in various harsh environments.

[0017] In a specific embodiment, the filter also includes solder balls, which are connected to the filter circuit. The design of the solder balls further enhances the reliability and stability of the filter circuit. The solder balls serve as the connection points between the filter circuit and external components. Through a precise welding process, high-precision connections between the circuits are ensured. By precisely controlling the position and number of the solder balls, the coupling effect between the capacitor and the inductor can be further optimized, thereby improving the filter efficiency and frequency response characteristics of the filter. In addition, the solder balls can also make the installation and maintenance of the filter more convenient. This design not only improves the overall performance of the filter, but also provides a strong guarantee for its application in various complex environments.

[0018] According to a third aspect of the present invention, a method for manufacturing a filter having a three-dimensional capacitor structure is provided, comprising the following steps:

[0019] S1. Providing a glass substrate, and making a plurality of circular blind holes and rectangular blind grooves on the surface of the glass substrate, wherein the long sides of the blind grooves are parallel and arranged side by side, two adjacent blind grooves form a group, and the area between the two adjacent blind grooves forms the dielectric layer of the three-dimensional capacitor structure;

[0020] S2. The edge of the blind groove away from the dielectric layer is processed to have a concave structure;

[0021] S3, simultaneously depositing continuous metal in the blind groove, the recessed structure, and the blind hole, forming an electrode plate and a metal pad of the three-dimensional capacitor structure in the blind groove and the recessed structure, respectively, wherein the electrode plate and the metal pad are an integrally formed structure, and forming a metal column of the three-dimensional inductor structure in the blind hole;

[0022] S4, performing metal wiring and laying insulating materials on the surface of the glass substrate to form an interconnection circuit of the three-dimensional capacitor structure and the three-dimensional inductor structure, a surface connector of the three-dimensional inductor structure, and a surface insulating layer;

[0023] S5, performing a thinning process on the back side of the glass substrate to expose the electrode plate and the metal pillar;

[0024] S6. Conducting metal wiring on the back side of the glass substrate to connect the metal pillars and laying insulating material to form a back side connector and a back side insulating layer of the three-dimensional inductor structure.

[0025] Preferably, in S2, the recessed structure is disposed in the middle of the blind slot. This design can concentrate current and increase current density, while also optimizing the layout, making the capacitor structure more compact and improving space utilization.

[0026] Preferably, the specific step S4 includes:

[0027] S41, performing chemical mechanical polishing on the surface of the glass substrate and laying an insulating material;

[0028] S42, performing metal wiring to form an interconnection circuit between the three-dimensional capacitor structure and the three-dimensional inductor structure, as well as a surface connector of the three-dimensional inductor structure;

[0029] S43, laying an insulating material on the interconnection circuit and the surface connection member to form a surface insulating layer;

[0030] S44. The connection sites of the solder balls are exposed in the insulating layer through processes such as photolithography and development, and then a soldering device is formed by electroplating or printing.

[0031] Compared with the prior art, the present invention has the following advantages:

[0032] (1) The three-dimensional capacitor structure of the present application uses part of the glass substrate structure directly as the dielectric layer, which simplifies the preparation process and improves the capacitance and Q value of the three-dimensional capacitor, making it resistant to high breakdown voltage;

[0033] (2) The three-dimensional capacitor structure of the present application also designs the pad area of the electrode plate to achieve higher precision manufacturing of the electrode plate;

[0034] (3) The filter manufacturing process of the present application is simple, and can simultaneously form a three-dimensional capacitor structure and a three-dimensional inductor structure with a high Q value, and the internal connection circuit of the filter is stable and reliable. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] The accompanying drawings are included to provide a further understanding of the embodiments and are incorporated into and constitute a part of this specification. The accompanying drawings illustrate the embodiments and, together with the description, serve to explain the principles of the present invention. Other embodiments and many of the expected advantages of the embodiments will be readily apparent as they become better understood by reference to the following detailed description. The elements of the drawings are not necessarily to scale with respect to each other. Like reference numerals designate corresponding similar parts.

[0036] Figure 1 shows a side cross-sectional structural diagram of a filter having a three-dimensional capacitor structure according to an embodiment of the present invention;

[0037] Figure 2 FIG2 shows a planar cross-sectional structural diagram of a filter having a three-dimensional capacitor structure according to an embodiment of the present invention;

[0038] Figure 3 A schematic flow chart of a method for manufacturing a filter having a three-dimensional capacitor structure according to an embodiment of the present invention is shown;

[0039] Figure 4a-m is a schematic structural diagram showing the steps in the process of manufacturing a filter with a three-dimensional capacitor structure according to a specific embodiment of the present invention;

[0040] The reference numerals are as follows:

[0041] 1-Glass substrate; 11-Blind groove; 12-Blind hole; 13-Recessed structure; 2-Electrode plate; 3-Metal pillar; 4-Surface insulating layer; 5-Surface connector; 6-Solder ball; 7-Back connector; 8-Glass dielectric layer; 9-Metal pad; 10-Back insulating layer; 14-Interconnection circuit. DETAILED DESCRIPTION

[0042] The present application will be further described in detail below in conjunction with the accompanying drawings and examples. It will be understood that the specific embodiments described herein are merely for explaining the relevant inventions and are not intended to limit the inventions. It should also be noted that, for ease of description, only the parts related to the relevant inventions are shown in the accompanying drawings. The structures in the accompanying drawings do not fully reflect the entire structure of the actual product. The description should be used as the standard for understanding, and the embodiments and features in the embodiments of the present application can be combined with each other if there is no conflict. The present application will be described in detail below with reference to the accompanying drawings and in conjunction with the examples.

[0043] Figure 1 and Figure 2 They are respectively a side cross-sectional view and a plane cross-sectional view of the filter with a three-dimensional capacitor structure of the present invention, and Figure 1 and Figure 2 :

[0044] A three-dimensional capacitor structure is provided on a glass substrate 1; the three-dimensional capacitor structure includes a pair of electrode plates 2, a pair of metal pads 9, and a dielectric layer 8; a plurality of through-slots with rectangular openings are made on the glass substrate 1, and the dielectric layer 8 is formed after the through-slots are made; the electrode plates 2 are made by filling the through-slots with metal; the dielectric layer 8 is located between the pair of electrode plates 2; the dielectric layer 8 itself is part of the glass substrate 1, and the dielectric layer 8 and the glass substrate 1 are an integrally formed structure; a recessed structure 13 is machined at the edge of the through-slot relative to the dielectric layer 8, and the metal pad 9 is made by filling the recessed structure 13 with metal; the electrode plates 2 and the metal pad 9 are an integrally formed structure.

[0045] In a specific embodiment, the dielectric layer 8 is formed before the electrode plate 2. The dielectric layer 8 is part of the glass substrate 1 and is integrally formed with the glass substrate 1. Therefore, it can be formed directly after the through groove is formed, without the need for additional steps to form the dielectric layer.

[0046] In a specific embodiment, the through-slots are arranged parallel to the long sides of the notch, and two adjacent through-slots form a pair. Each through-slot forms an electrode plate 2, and the portion of the glass substrate structure sandwiched between them cleverly acts as the dielectric layer 8 in the three-dimensional capacitor structure. This design not only gives the capacitor three-dimensional characteristics, but also significantly improves its capacitance value and stability. In addition, the neatly arranged through-slots facilitate the integration of multiple capacitors, thereby facilitating the construction of high-density capacitor arrays.

[0047] In a specific embodiment, the surface of the glass substrate 1 is flat, and the surfaces of the electrode plate 2 and the metal pad 9 are flush with the surface of the glass substrate 1. The flush surfaces help improve the interconnection reliability between the capacitor and other electronic components, and also facilitate packaging and protection in subsequent processes.

[0048] In a specific embodiment, the bottom of the recessed structure 13 is flat. This flat bottom ensures uniform formation of the metal pad 9, avoiding uneven metal filling or voids. Furthermore, the sidewalls of the recessed structure 13 are meticulously machined to ensure verticality and smoothness, which facilitates the flow and distribution of metal during the filling process, resulting in a metal pad 9 with a regular shape and precise dimensions.

[0049] A filter having a three-dimensional capacitor structure, in a specific embodiment, also includes a three-dimensional inductor structure; the three-dimensional inductor structure includes a metal pillar 3, a surface connector 5, and a back connector 7. The metal pillar 3 vertically penetrates the glass substrate 1, with its ends flush with the surface and back of the glass substrate 1, respectively. The surface connector 5 is responsible for sequentially connecting the upper end of the metal pillar 3, and the back connector 7 is responsible for sequentially connecting the lower end of the metal pillar 3, forming a spiral three-dimensional capacitor structure. Through reasonable layout and design, the three-dimensional capacitor structure enables the filter to achieve higher performance and more functions while maintaining miniaturization, opening up possibilities for further integration and optimization of the filter.

[0050] In a specific embodiment, the three-dimensional capacitor structure and the three-dimensional inductor structure form a filter circuit via an interconnect circuit 14. Interconnect circuit 14 cleverly connects the three-dimensional capacitor structure and the three-dimensional inductor structure, ensuring a stable and efficient signal transmission path within the filter. This connection method not only simplifies the internal structure of the filter but also improves its overall performance and reliability.

[0051] In a specific embodiment, the three-dimensional capacitor structure is interconnected into the filter circuit via a metal pad 9. The metal pad 9, as a key connection component, can ensure a stable connection between the three-dimensional capacitor structure and the filter circuit.

[0052] In this specific embodiment, the filter also includes a surface insulating layer 4 and a back insulating layer 10. The surface insulating layer 4 covers the surface of the glass substrate 1, the interconnecting circuit 14, and the surface connector 5; the back insulating layer 10 covers the back of the glass substrate 1 and the back connector 7. The two insulating layers effectively isolate the circuit from other potential interference sources, enhancing the filter's anti-interference capability and stability, and making the filter's overall structure more robust and durable.

[0053] In a specific embodiment, solder balls 6 are also included, connected to the filter circuit. Solder balls 6 serve as a crucial interface between the filter circuit and external circuitry. Their design not only ensures a stable connection between the filter and external circuitry but also improves signal transmission efficiency. Through a sophisticated soldering process, solder balls 6 are securely fixed to designated locations within the filter circuit, ensuring the filter maintains excellent electrical performance under a variety of operating conditions.

[0054] Figure 3 FIG4 is a schematic diagram showing the flow of a method for manufacturing a filter having a three-dimensional capacitor structure. FIG4 is a schematic diagram showing the structure of each step in the process of manufacturing a filter having a three-dimensional capacitor structure. Figure 3 4 , the preparation of a filter having a three-dimensional capacitor structure specifically includes the following steps:

[0055] First, as Figure 4a As shown, a plurality of circular blind holes 12 and rectangular blind grooves 11 are made on a glass substrate 1 by the TGV process. The long sides of the blind grooves 11 are parallel and arranged side by side. Two adjacent blind grooves 11 form a group, and the area between the two adjacent blind grooves 11 forms a dielectric layer 8 of a three-dimensional capacitor structure.

[0056] In a specific embodiment, the simultaneous production of blind slots 11 and blind vias 12 using the TGV process avoids errors and defects that may occur when they are produced separately, thereby improving production accuracy and consistency. Furthermore, because the blind slots 11 and blind vias 12 are produced in the same process, the filter production process can be simplified, saving production time and costs, and improving production efficiency. Furthermore, the simultaneous production of blind slots 11 and blind vias 12 allows for better control of the size and position of the three-dimensional capacitor and inductor structures, ensuring precise matching between them, thereby improving the overall performance and reliability of the filter.

[0057] For example Figure 4bAs shown, a recessed structure 13 is machined on the edge of each blind groove 11 away from the dielectric layer 8 using the TGV process. Since the recessed structure 13 is connected to the blind groove 11, this process can directly eliminate the step of connecting the electrode plate 2 and the metal pad 9 of the three-dimensional capacitor structure, and realize the integral molding of the electrode plate 2 and the metal pad 9. This not only simplifies the manufacturing process, but also ensures a tighter electrical connection between the electrode plate 2 and the metal pad 9, reduces the performance degradation caused by poor connection, and further improves the durability and service life of the capacitor.

[0058] Then as Figure 4c and 4d As shown, continuous metal is deposited simultaneously in the blind groove 11, the recessed structure 13 and the blind hole 12 and annealed, and then chemical mechanical polishing is used to remove excess metal on the surface of the glass substrate 1. After metal deposition, an electrode plate 2 and a metal pad 9 of a three-dimensional capacitor structure are formed in the blind groove 11 and the recessed structure 13, respectively. The electrode plate 2 and the metal pad 9 are connected to form a metal column 3 of a three-dimensional inductor structure in the blind hole 12.

[0059] In a specific embodiment, this step directly completes the fabrication of a three-dimensional capacitor structure, while also simultaneously fabricating the metal pillars 3 of the three-dimensional inductor structure. This process is extremely simple and efficient, achieving an integrated design of capacitor and inductor structures. Each glass dielectric layer 8, along with the electrode plates 2 on either side and the metal pads 9 connecting the two electrode plates 2, together form a three-dimensional capacitor structure.

[0060] For example Figure 4e As shown, an insulating material is laid on the surface of the glass substrate 1 to form a first surface insulating layer 4; then the insulating material above the metal pads 9, metal columns 3 and the wiring routes of the surface connectors 5 is removed to expose all the metal columns 3 and partial areas of the metal pads 9, and to form the wiring routes of the surface connectors 5, as shown in FIG. Figure 4f Then perform preliminary metal wiring, forming a connection with the interconnection circuit 14 on the metal pad 9, and the surface connection member 5 of the three-dimensional inductor structure, as shown Figure 4g shown.

[0061] Then as Figure 4h As shown, the insulating material is laid again to ensure that all metal circuits are wrapped in the insulating layer 4; then, on this basis, the wiring route of the interconnection circuit 14 of the three-dimensional capacitor structure and the three-dimensional inductor structure is designed, and the insulating material of this route is removed to form the interconnection circuit 14, as shown in FIG. Figure 4i After forming the interconnect circuit 14 and then laying an insulating material on its surface to form a complete surface insulating layer 4, such as Figure 4j shown.

[0062] In a specific embodiment, by laying down insulating materials and metal wiring multiple times, a good interconnected circuit can be formed between the three-dimensional capacitor structure and the three-dimensional inductor structure, while avoiding direct contact between the metal circuits, thereby improving the insulation performance and reliability of the entire electronic device. In addition, by laying down insulating materials and metal wiring layer by layer, the layout and size of the three-dimensional capacitor structure and the three-dimensional inductor structure can be precisely controlled, thereby achieving higher integration and smaller volume. This manufacturing method not only improves the performance of the electronic device, but also reduces production costs.

[0063] Continue to refer Figure 4k , by photolithography and development, the connection sites of the solder balls 6 are specifically exposed on the insulating layer, and then the soldering device is formed by electroplating.

[0064] In a specific embodiment, the above process can ensure that a good electrical connection is formed between the solder ball 6 and the interconnection circuit 14 of the three-dimensional capacitor structure and the three-dimensional inductor structure. At the same time, the solder ball 6 serves as an interface for external connection, which is convenient for welding and assembly with other electronic components, thereby improving the integration and reliability of the entire electronic component.

[0065] Then refer to Figure 4l After the connection of the solder balls 6 is completed, the back of the glass substrate 1 can be thinned to expose the metal pillars 3.

[0066] Finally, Figure 4m As shown, insulating material is laid on the back of the glass substrate 1. The insulating material at the locations corresponding to the back connectors 7 of the three-dimensional inductor structure is then removed, and metal wiring is performed to form the back connectors 7 of the three-dimensional inductor structure. The surface connectors 5, metal pillars 3, and back connectors 7 are then connected end to end, completing the construction of the three-dimensional inductor structure. Finally, insulating material is laid over the back connectors 7 to form a back insulating layer 10. Like the surface insulating layer 4, the back insulating layer 7 not only protects the metal circuitry but also ensures the stability and durability of the electronic device.

[0067] Through a series of meticulous fabrication steps, a highly integrated design of three-dimensional capacitor and inductor structures was successfully achieved. This design not only significantly improves the stability of capacitance and inductance values, as well as high-density integration, but also significantly simplifies the manufacturing process, reduces production costs, and injects new vitality into the development of the modern electronics industry. Furthermore, this fabrication method has excellent scalability and adaptability, allowing precise adjustment of the layout and dimensions of the capacitor and inductor structures according to actual needs to meet the requirements of different application scenarios.

[0068] The above describes the specific embodiments of the present application, but the scope of protection of the present application is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in this application should be included in the scope of protection of the present application. Therefore, the scope of protection of the present application should be based on the scope of protection of the claims.

[0069] In the description of this application, it should be understood that the terms "upper", "lower", "inside", "outside", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, they cannot be understood as limiting this application. The word "comprising" does not exclude the presence of elements or steps not listed in the claims. The word "one" or "an" preceding an element does not exclude the presence of multiple such elements. The simple fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measures cannot be used for improvement. Any reference signs in the claims should not be interpreted as limiting the scope.

Claims

1. A three-dimensional capacitor structure, characterized in that: The three-dimensional capacitor structure is arranged on a glass substrate; the three-dimensional capacitor structure includes a pair of electrode plates, a pair of metal pads and a dielectric layer; a plurality of rectangular through-slots are made on the glass substrate, the dielectric layer is formed after the through-slots are made, the electrode plates are made by filling metal in the through-slots, the dielectric layer is located between the pair of electrode plates, the dielectric layer itself is part of the glass substrate, and the dielectric layer and the glass substrate are an integrally formed structure; the through-slot notches are processed with recessed structures relative to the edges of the dielectric layer, and the metal pads are made by filling metal in the recessed structures; the electrode plates and the metal pads are an integrally formed structure.

2. The three-dimensional capacitor structure according to claim 1, wherein: The dielectric layer is formed before the electrode plate.

3. The three-dimensional capacitor structure according to claim 1, wherein: The through slots are arranged in parallel and side by side with the long sides of the slot openings as parallel sides.

4. The three-dimensional capacitor structure according to claim 1, wherein: The surface of the glass substrate is flat; the surface of the electrode plate and the surface of the metal pad are both flush with the surface of the glass substrate.

5. The three-dimensional capacitor structure according to claim 1, wherein: The bottom of the concave structure is flat.

6. A filter having a three-dimensional capacitor structure, characterized in that: A three-dimensional capacitor structure according to any one of claims 1 to 5.

7. The filter having a three-dimensional capacitor structure according to claim 6, characterized in that: The filter further comprises a three-dimensional inductor structure; the three-dimensional inductor structure comprises a metal column, a surface connector and a back connector.

8. The filter having a three-dimensional capacitor structure according to claim 7, characterized in that: The three-dimensional capacitor structure and the three-dimensional inductor structure form a filter circuit through an interconnection circuit.

9. The filter having a three-dimensional capacitor structure according to claim 8, characterized in that: The three-dimensional capacitor structure is interconnected into the filter circuit through the metal pad.

10. The filter with a three-dimensional capacitor structure according to claim 8, characterized in that: It also includes a surface insulating layer and a back insulating layer. The surface insulating layer wraps the surface of the glass substrate, the interconnection circuit and the surface connector; the back insulating layer wraps the back of the glass substrate and the back connector.

11. A method for manufacturing a filter having a three-dimensional capacitor structure, characterized in that: The following steps are involved: S1. Providing a glass substrate, and making a plurality of circular blind holes and rectangular blind grooves on the surface of the glass substrate, wherein the long sides of the blind grooves are parallel and arranged side by side, two adjacent blind grooves form a group, and the area between the two adjacent blind grooves forms the dielectric layer of the three-dimensional capacitor structure; S2. The edge of the blind groove away from the dielectric layer is processed to have a concave structure; S3, simultaneously depositing continuous metal in the blind groove, the recessed structure, and the blind hole, forming an electrode plate and a metal pad of the three-dimensional capacitor structure in the blind groove and the recessed structure, respectively, wherein the electrode plate and the metal pad are an integrally formed structure, and forming a metal column of the three-dimensional inductor structure in the blind hole; S4, performing metal wiring and laying insulating materials on the surface of the glass substrate to form an interconnection circuit of the three-dimensional capacitor structure and the three-dimensional inductor structure, a surface connector of the three-dimensional inductor structure, and a surface insulating layer; S5, performing a thinning process on the back side of the glass substrate to expose the electrode plate and the metal pillar; S6. Conducting metal wiring on the back side of the glass substrate to connect the metal pillars and laying insulating material to form a back side connector and a back side insulating layer of the three-dimensional inductor structure.

12. The method for manufacturing a filter having a three-dimensional capacitor structure according to claim 11, wherein: In S2, the recessed structure is provided at a middle position of the blind groove.

13. The method for manufacturing a filter having a three-dimensional capacitor structure according to claim 11, wherein: The specific steps of S4 include: S41, performing chemical mechanical polishing on the surface of the glass substrate and laying an insulating material; S42, performing metal wiring to form an interconnection circuit between the three-dimensional capacitor structure and the three-dimensional inductor structure, as well as a surface connector of the three-dimensional inductor structure; S43, laying an insulating material on the interconnection circuit and the surface connection member to form a surface insulating layer; S44, forming a welding device by exposing the solder balls at specific connection sites on the insulating layer.

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