Standardized high-power microwave assembly module

Abstract

The invention belongs to the technical field of microwave radio frequency circuits, and discloses a standardized high-power microwave component module. Comprising a metal structural member, a first radio frequency connector, a second radio frequency connector, a first feed insulator, a second feed insulator, an upper cover plate, a lower cover plate, a first circuit wafer, a second circuit wafer, a modulation circuit board and a plurality of monolithic microwave integrated circuit (MMIC) chips, the metal structural member is used for fixing and supporting the radio frequency connector, the feed insulator, the circuit wafer, the modulation circuit board and the plurality of chips; the plurality of chips comprise a power amplifier chip, a power supply modulation chip and a negative voltage conversion chip; standardized design is adopted, rapid disassembly and repeated use of the module can be supported, and the maintenance and use cost is effectively reduced; flexible combination and rapid deployment can be carried out as a module according to the requirements of a microwave system; the advanced vertical interconnection technology is utilized, and effective vertical connection of high-power radio frequency signals can be achieved.

Description

Technical Field

[0001] The present invention belongs to the technical field of microwave radio frequency circuits, and in particular relates to a standardized high-power microwave component module. Background Art

[0002] With the rapid development of modern electronic warfare, communications, and radar systems, the demand for high-power RF front-end systems is becoming increasingly urgent. Traditional RF components are interconnected via RF cables, resulting in bulky components that are not easily disassembled and reused. This makes them unable to meet the urgent needs for mobility and multi-platform adaptability in current multi-domain, multi-platform solid-state high-power microwave systems.

[0003] Through the above analysis, the problems and defects of the existing technology are as follows:

[0004] Traditional RF components are connected to each other through RF cables, which makes the components bulky and not conducive to rapid disassembly and reuse. They cannot meet the current urgent needs of multi-domain and multi-platform solid-state high-power microwave systems for mobility and multi-platform adaptability. Summary of the Invention

[0005] In view of the problems existing in the prior art, the present invention provides a standardized high-power microwave component module.

[0006] The present invention is implemented as follows: a standardized high-power microwave component module includes:

[0007] A metal structure, a first RF connector, a second RF connector, a first feed insulator, a second feed insulator, an upper cover, a lower cover, a first circuit chip, a second circuit chip, a modulation circuit board, and multiple monolithic microwave integrated circuit (MMIC) chips; the metal structure is used to fix and support the RF connector, the feed insulator, the circuit chip, the modulation circuit board, and the multiple chips; the multiple chips include a power amplifier chip, a power modulation chip, and a negative voltage conversion chip;

[0008] The first RF connector, the first circuit chip, the second circuit chip, and the power amplifier chip are located above the metal structure; the second feed insulator, the modulation circuit board, the power modulation chip, and the negative voltage conversion chip are located below the metal structure; the second RF connector and the first feed insulator are located inside the central support block of the metal structure;

[0009] The first RF connector is an RF SMP surface-mount connector, whose input end is connected to the preceding microwave module, and whose output end is connected to the input port of the power amplifier, so as to realize vertical transmission of the RF signal to the power amplifier chip; the second RF connector is an RF SMP through-wall connector, whose input end is connected to the output port of the power amplifier, and whose output end is connected to the subsequent microwave module, so as to realize vertical transmission of the amplified RF signal to the next microwave module;

[0010] The input end of the power modulation chip is connected to the external power supply, and the output end is connected to the drain of the power amplifier chip, thereby controlling the drain operating voltage of the power amplifier chip and providing the drain operating voltage of the power amplifier chip; the input end of the negative voltage conversion chip is connected to the external power supply, and the output end is connected to the gate of the power amplifier chip, thereby controlling the gate operating voltage of the power amplifier chip and providing the gate operating voltage of the power amplifier chip;

[0011] The first circuit chip is provided with an input RF signal transmission line and a DC signal transmission line, wherein the input RF signal transmission line can form a quasi-coaxial structure with the first RF connector; the second circuit chip is provided with an output RF signal transmission line and a DC signal transmission line, wherein the output RF signal transmission line can form a quasi-coaxial structure with the second RF connector;

[0012] The first feed insulator is welded vertically inside the central support block of the metal structure, and its quantity and position need to be determined according to the actual needs of the microwave component module; the second feed insulator is welded horizontally on the side wall of the metal structure, and its quantity and position need to be determined according to the actual needs of the microwave component module.

[0013] Furthermore, the first circuit chip and the second circuit chip are bonded to the upper surface of the metal structure, and the modulation circuit board is bonded to the lower surface of the metal structure.

[0014] Furthermore, the power amplifier chip is directly bonded to the groove on the upper surface of the metal structure, and the groove depth needs to be determined according to the thickness of the power amplifier chip; the power modulation chip and the negative voltage conversion chip are bonded to the modulation circuit board.

[0015] Furthermore, the first RF connector is bonded to the first circuit chip and connected to the input port of the power amplifier through the input RF signal transmission line; the second RF connector is welded inside the central support block of the metal structure, its wave needle is connected to the second circuit chip, and is connected to the output port of the power amplifier through the output RF signal transmission line.

[0016] Furthermore, the output terminal of the power modulation chip is connected to the drain of the power amplifier chip through the first feeding insulator, and the output terminal of the negative voltage conversion chip is also connected to the gate of the power amplifier chip through the first feeding insulator.

[0017] Furthermore, the input terminal of the power modulation chip is connected to the external power supply through the second feeding insulator, and the input terminal of the negative voltage conversion chip is also connected to the external power supply through the second feeding insulator.

[0018] Furthermore, the power amplifier chip is connected to the first circuit chip and the second circuit chip using gold tape.

[0019] Furthermore, the material of the metal structural member, the upper cover plate and the lower cover plate may be aluminum.

[0020] In combination with the above technical solutions and the technical problems solved, please analyze the advantages and positive effects of the technical solutions to be protected by the present invention from the following aspects:

[0021] First, compared with the prior art, the present invention has the following significant advantages: (1) It adopts a standardized design and provides a standardized basic component module for the agile design of high-power components. By cascading different functional modules, the needs of different microwave systems can be met, flexible combination and reuse can be achieved, maintenance and use costs can be effectively reduced, and the application range of high-power microwave components can be expanded; (2) The assembly of the module can be completed through the micro-assembly bonding process and bonding process. This technology has low assembly requirements and has the advantages of reconfigurability, easy assembly and mass production.

[0022] Second, the technical solution of this invention standardizes high-power microwave component modules, allowing them to be flexibly combined to meet the needs of different microwave systems. This solves the current problem of large high-power microwave components, which are not conducive to rapid disassembly and reuse. This greatly expands the application range of high-power microwave components and can meet the urgent needs of multi-domain, multi-platform solid-state high-power microwave systems for mobility and multi-platform adaptability. At the same time, the patent results will also provide important technical support for other related fields, such as advanced radar systems, electronic warfare systems, precision-guided weapon systems, space situational awareness and intelligence reconnaissance systems, and have broad application prospects. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 This is a block diagram of a standardized high-power microwave component provided by an embodiment of the present invention.

[0024] Figure 2 This is a layout diagram of the upper surface of a high-power microwave component module provided by an embodiment of the present invention.

[0025] Figure 3This is a layout diagram of the lower surface of the high-power microwave component module provided by an embodiment of the present invention.

[0026] Figure 4 It is a three-dimensional schematic diagram of a high-power microwave component module provided by an embodiment of the present invention.

[0027] Figure 5 It is a three-dimensional schematic diagram of a high-power pulse radar microwave component provided by an embodiment of the present invention.

[0028] In the figure: 1. Second RF connector; 2. First RF connector; 3. First feed insulator; 4. First feed insulator; 5. Second feed insulator; 6. Second feed insulator; 7. Second feed insulator; 8. Second feed insulator; 9. Power amplifier chip; 10. Second circuit chip; 11. First circuit chip; 12. Modulation circuit board; 13. Metal structural part; 14. Upper cover; 15. Lower cover; 16. Gold tape; 17. Power modulation chip; 18. Negative voltage conversion chip. DETAILED DESCRIPTION

[0029] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0030] like Figure 1 As shown, a standardized high-power microwave component module provided by an embodiment of the present invention includes:

[0031] A metal structure 13; a first RF connector 2, a first circuit chip 11, a second circuit chip 10, and a power amplifier chip 9 located above the metal structure 13; a modulation circuit board 12, second feed insulators 5 to 8, a power modulation chip 17, and a negative voltage conversion chip 18 located below the metal structure 13; a second RF connector 1, first feed insulators 3 and 4, and an upper cover 14 and a lower cover 15 located in the center of the metal structure.

[0032] RF signals from external devices first enter the component module through first RF connector 1, located in the center of the metal structure. The signals are then transmitted via first feed insulators 3 and 4 to first circuit chip 11, located above metal structure 13. First circuit chip 11 performs preliminary filtering and impedance matching on the incoming RF signals, ensuring they are optimally positioned for subsequent power amplification, minimizing signal distortion and loss, and paving the way for efficient operation of power amplifier chip 9.

[0033] After preliminary processing, the RF signal reaches the power amplifier chip 9. Driven by an appropriate power supply, the power amplifier chip 9 amplifies the input RF signal. The power modulation chip 17, located below the metal structure 13, is responsible for providing a stable and adjustable power supply to the power amplifier chip 9. By precisely regulating the voltage and current of the power supply, the power modulation chip 17 ensures that the power amplifier chip 9 maintains optimal amplification performance under different operating conditions and outputs a high-power RF signal that meets the requirements. At this point, the amplified signal passes through the second circuit chip 10 to further optimize the signal quality.

[0034] The modulation circuit board 12, located beneath the metal structure 13, plays a crucial role. It modulates the amplified RF signal using specific modulation techniques, such as amplitude modulation and frequency modulation, based on actual application requirements, ensuring that the signal conforms to specific communication or application protocol standards. Simultaneously, the negative voltage conversion chip 18 converts the input power supply voltage into a negative voltage suitable for the operation of certain chips and circuits. This provides diverse power supply support for the stable operation of the various functional chips and circuits within the module, ensuring that all components function together under appropriate power conditions.

[0035] The modulated and optimized high-power RF signal is output to external devices via a second RF connector 2 located in the center of the metal structure, enabling high-power microwave transmission applications. The metal structure 13, upper cover 14, and lower cover 15 together form a physical protective structure for the internal electronic components. This metal housing not only shields external electromagnetic interference and ensures the stability of internal signal processing, but also provides mechanical protection for the internal chips and circuits, preventing physical damage such as collisions and vibrations during transportation, installation, and use, ensuring the long-term and reliable operation of the entire high-power microwave component module.

[0036] like Figure 2 、 Figure 3 As shown, the first circuit chip 11, the second circuit chip 10, and the power amplifier chip 9 are bonded to the upper surface of the metal structure 13; the first RF device 2 is welded on the first circuit chip 11; the modulation circuit board 12 is bonded to the lower surface of the metal structure 13, and the power modulation chip 17 and the negative voltage conversion chip 18 are bonded to the modulation circuit board 12; the second RF connector 1 and the second feed insulators 3 to 8 are welded inside the center of the metal structure 13.

[0037] The incoming RF signal first enters the module through the first RF connector 2, a surface-mount SMP connector. It connects to the input RF signal transmission circuit on the first circuit chip 11. This circuit chip features a quasi-coaxial structure, effectively minimizing signal loss and ensuring signal stability. The signal is then transmitted via the first circuit chip to the input port of the power amplifier chip 9, where it begins amplification.

[0038] The power amplifier chip 9 is the core component of the module, used for high-power amplification of the input RF signal. The drain voltage of the power amplifier chip is provided by the power modulation chip 17, and the gate voltage is provided by the negative voltage conversion chip 18. The power modulation chip and the negative voltage conversion chip are connected to the power amplifier chip via the first feed insulators 3 and 4, ensuring a stable voltage supply. This ensures that the power amplifier chip operates in optimal conditions and outputs RF signals with high gain and high power.

[0039] The amplified RF signal is transmitted to the second circuit chip 10 through the output port of the power amplifier chip 9. The output RF signal transmission line on the second circuit chip also adopts a quasi-coaxial design and is connected to the second RF connector 1. The second RF connector adopts an SMP through-the-wall design, which can vertically transmit the amplified signal to the next-level microwave module, ensuring that the signal output path is efficient and low-loss.

[0040] The module's metal structure 13 not only provides support but also aids in heat dissipation through its excellent thermal conductivity, particularly providing reliable thermal management for the power amplifier chip. Furthermore, the upper and lower covers 14, 15, and the metal structure together form a shielded cavity, effectively preventing external electromagnetic interference and suppressing electromagnetic leakage within the module, thereby improving the stability and reliability of the entire system. Ultimately, the standardized module design enables seamless integration and rapid deployment of multiple modules, making it suitable for a variety of high-power microwave applications.

[0041] like Figure 4 As shown in FIG. 1 , as a specific embodiment, the power amplifier chip 9 is a high-power power carrier, synthesized using a die fabricated using a 0.35 μm gate length HFET process. Operating with dual power supplies, a drain voltage of Vds = 70 V and a gate voltage of Vgs = -0.9 V, it can provide an output power greater than 62.5 dBm in the 8.2-8.8 GHz range, a power gain of 8.3 dB, and a drain efficiency of 35%.

[0042] As a specific embodiment, the power modulation chip 17 is a high-power medium- and high-voltage modulation switch module. This module incorporates a built-in modulation switch, an N-channel MOSFET with extremely low on-resistance, which helps reduce system losses and improve operational reliability. This module's built-in MOSFET can quickly respond to external TTL modulation signals, achieving a rapid increase in output voltage. To enhance system reliability, the module also features negative voltage power-off detection and output shutdown.

[0043] As a specific embodiment, the negative voltage conversion chip 18 is a low voltage difference negative voltage linear voltage regulator chip that can output 1A, and has the following functions: input voltage range: -2.5V to -12V; output current capacity: 1A; output voltage can be adjusted externally; output current limit point can be adjusted; overheating protection, etc.

[0044] As a specific embodiment, the first circuit sheet 11 is a Rogers 6002 substrate with a thickness of 0.508 mm and a printed pattern gold-plated with 3 μm. An input RF signal transmission line and a positive pressure signal transmission line are provided on the first circuit sheet 11, wherein the pattern of the input RF signal transmission line needs to be determined after joint simulation with the second RF connector 1.

[0045] As a specific embodiment, the second circuit sheet 10 is a Rogers 6002 substrate with a plate thickness of 0.508 mm and a printed pattern gold-plated with 3 μm. An output RF signal transmission line and a negative pressure signal transmission line are provided on the second circuit sheet 10, wherein the output RF signal transmission line pattern needs to be determined after joint simulation with the first RF connector 2.

[0046] In a specific embodiment, the RF signal is input from the first RF connector 2, transmitted vertically to the first circuit chip 11, and then transmitted via the input RF signal transmission line and the gold ribbon to the input port of the power amplifier chip 9. The amplified RF signal is transmitted from the output port of the power amplifier chip 9 via the gold ribbon to the second circuit chip 10, and then transmitted vertically from the second RF connector 1 via the output RF signal transmission line.

[0047] As a specific embodiment, the modulation circuit board 12 is an FR4 substrate with a thickness of 1 mm. It is provided with a power modulation chip 17 (at P1), a negative voltage conversion chip 18 (at P2) and resistors and capacitors for providing the drain voltage and gate voltage required by the power amplifier chip 9.

[0048] As a specific implementation method, the input signals of the power modulation chip 17 are 70V, 12V, -5V and TTL modulation signals, which are respectively provided by an external power supply through the second feeding insulators 5 to 8; the output signal of the power modulation chip 17 is a 70V modulation signal, which is transmitted to the positive voltage signal transmission line of the first circuit chip 11 through the first insulator 4, and then connected to the drain port of the power amplifier chip 9 through the gold tape 16.

[0049] As a specific embodiment, the input signal of the negative voltage conversion chip 18 is -5V, which is provided by an external power supply through the second feed insulator 7; the output signal of the negative voltage conversion chip 18 is -0.9V voltage, which is transmitted to the negative voltage signal transmission line of the second circuit chip 10 through the first insulator 3, and then connected to the gate port of the power amplifier chip 9 through the gold tape 16.

[0050] As a specific implementation, the upper cover plate 14 and the lower cover plate 15 can be welded to the metal structure 13 to complete the packaging of the module.

[0051] As a specific implementation, the metal structural member 13 , the upper cover plate 14 and the lower cover plate 15 are made of aluminum.

[0052] As a specific implementation, the module can be cooled by an external air cooling device.

[0053] As a specific implementation, the first RF connector is a 2-RF SMP surface-mount connector, the second RF connector is a 1-RF SMP through-wall connector, and the two modules are connected through SMP-KK.

[0054] As a specific implementation, the microwave component module of this embodiment can be used as a standardized module in a high-power pulse radar microwave component, such as Figure 5 As shown, the microwave modules designed by the method of the present invention in the first four stages are used as driving modules and cascaded with the modules of this embodiment. After testing, the output power of the cascaded microwave components is greater than 62dBm (pulse width 3us, duty cycle 2‰) within 8-9GHz.

[0055] Example 1: High-power microwave component module suitable for satellite communication systems

[0056] This embodiment provides a standardized high-power microwave component module for use in the transmission link of a satellite communication system. The specific structure is as follows:

[0057] 1) Metal structural parts: Made of high-strength aluminum alloy with anodized surface, used to fix and support all module components.

[0058] 2) First RF connector and second RF connector: An SMP surface-mount connector and an SMP through-wall connector, respectively. The first RF connector vertically transmits the external RF signal to the power amplifier input within the module, while the second RF connector vertically transmits the amplified RF signal to the next-level module.

[0059] 3) Power amplifier chip: A GaN-based MMIC chip is bonded into a groove on the upper surface of the metal structure and connected to the first and second circuit chips via a gold ribbon. The depth of the groove is 90% of the thickness of the power amplifier chip.

[0060] 4) Power supply modulation chip and negative voltage conversion chip: bonded to the modulation circuit board, respectively providing drain and gate operating voltages to the power amplifier chip through the first feeding insulator.

[0061] 5) Circuit chip: The first circuit chip is provided with an input RF signal transmission line and a DC signal transmission line, which are connected to the first RF connector; the second circuit chip is provided with an output RF signal transmission line and a DC signal transmission line, which are connected to the second RF connector.

[0062] 6) Feed insulator: The first feed insulator is installed in the central support block of the metal structure, and the second feed insulator is installed on the side wall, which is used to connect the external power supply and the power modulation chip and the negative voltage conversion chip.

[0063] After RF testing, the module can provide up to 50W output power in the Ku band, with gain flatness maintained within ±0.5dB, making it suitable for high-stability and high-power satellite communication applications.

[0064] Example 2: High-power microwave component module for radar systems

[0065] This embodiment provides a high-power microwave component module for a transmitting front end in a radar system, and its structure is as follows:

[0066] 1) Metal Structural Components: Made of copper alloy, silver-plated to improve thermal conductivity. These components not only secure the power amplifier chip but also serve as a heat sink.

[0067] 2) First RF connector and second RF connector: The first RF connector is a surface-mount connector, which is connected to the input port of the power amplifier through the input RF signal transmission line; the second RF connector is a through-wall connector, which is welded in the center of the metal structure and connected to the output RF signal transmission line through a wave needle.

[0068] 3) Power amplifier chip: A GaAs-based MMIC chip is bonded into a groove in a metal structure. The groove depth perfectly matches the chip thickness to ensure good heat dissipation. It is electrically connected to the circuit chip via a gold ribbon.

[0069] 4) Power modulation chip and negative voltage conversion chip: fixed on the modulation circuit board by conductive adhesive respectively, and the output end provides the working voltage to the power amplifier chip through the first feeding insulator.

[0070] 5) Circuit chip: Made of low-loss ceramic substrate, the input and output signal transmission lines adopt a quasi-coaxial design, which can reduce signal loss in RF transmission.

[0071] 6) Feed insulator: The first feed insulator is used to connect the drain and gate of the power amplifier chip, and the second feed insulator is used to connect the external power supply and the modulation circuit board.

[0072] 7) Upper cover and lower cover: Made of aluminum alloy, they are precisely machined and combined with metal structural parts to form a complete shielding cavity to improve anti-electromagnetic interference performance.

[0073] The module achieves an output power of 40W in the X-band and a gain greater than 25dB, which can meet the high-power transmission requirements of the radar system. At the same time, the module's heat dissipation performance is significantly optimized to ensure long-term operational stability.

[0074] Relevant evidence of the technical effects achieved by the embodiments of the present invention.

[0075] Table 1 Microwave component output power test data

[0076]

[0077] It can be seen from the test data that within the range of 8.2 to 8.8 GHz, the saturated output power of the microwave components is greater than 61.9 dBm (about 1550 W), and can reach a maximum of 62.7 dBm (about 1860 W).

[0078] Table 2 Microwave component temperature test data

[0079] Time / min Temperature / ℃ 1 51.4 2 60.3 3 66.9 5 67.6 10 67.4 30 67.5 60 67.2

[0080] According to the microwave component output power test data in Table 1, within the frequency range of 8.2 to 8.8 GHz, the microwave components all exhibit excellent output power performance for different input power conditions. Their saturated output power is greater than 61.9 dBm (approximately 1550 W), and the highest can reach 62.7 dBm (approximately 1860 W). This data intuitively proves that the standardized high-power microwave component module provided by the embodiment of the present invention has a strong power amplification capability and can meet the needs of many application scenarios with strict high-power microwave requirements, such as long-distance communications, radar detection and other fields for high-power microwave signals.

[0081] The microwave module temperature test data in Table 2 demonstrates that temperature fluctuations were effectively controlled during continuous operation. The temperature gradually rose from 51.4°C at the start of operation, reaching 66.9°C after 3 minutes, then stabilized at around 67.6°C after 5 minutes. After an hour of continuous operation, the temperature remained stable within 68°C. This fully demonstrates the advantages of the microwave module's heat dissipation design and internal circuit stability, ensuring that the module maintains a safe and reasonable temperature range even under prolonged high-load operation, ensuring reliable operation and extending its service life.

[0082] Compared to similar microwave components on the market, the components of the present invention offer significant advantages in output power and temperature control. They can achieve higher saturated output power across a wide frequency range, providing a more robust microwave signal source for the device. Furthermore, they can maintain a stable temperature at a low level after one hour of continuous operation, whereas some similar products may experience performance degradation or even failure due to excessively high temperatures. These advantages make the microwave components of the present invention more competitive in practical applications, enabling them to adapt to more complex and demanding operating environments.

[0083] The above-mentioned outstanding technical effects are of great significance for practical applications. The high-power output capability ensures sufficient signal strength during transmission, reduces signal attenuation, and improves the distance and accuracy of communication and detection. Stable temperature control ensures that the microwave components can operate stably for a long time, reduces maintenance and downtime caused by temperature issues, and improves the operating efficiency and reliability of the entire system. Whether in the military and defense fields or in industries such as civilian communications and industrial testing, the technical effects of the microwave components of the embodiments of the present invention will provide strong support for the development of related applications and promote technological progress in the industry.

[0084] The above description is only a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any modifications, equivalent substitutions and improvements made by any technician familiar with this technical field within the technical scope disclosed by the present invention and within the spirit and principles of the present invention should be covered by the scope of protection of the present invention.

Claims

1. A standardized high-power microwave component module, comprising a metal structure, a first RF connector, a second RF connector, a first feed insulator, a second feed insulator, an upper cover, a lower cover, a first circuit chip, a second circuit chip, a modulation circuit board, and multiple monolithic microwave integrated circuit (MMIC) chips. The metal structure is used to securely support the RF connector, the feed insulator, the circuit chip, the modulation circuit board, and the MMIC chips. The first and second RF connectors are respectively connected to the first and second circuit chips via the metal structure. The first and second feed insulators are mounted on different parts of the metal structure. The MMIC chips include a power amplifier chip, a power modulation chip, and a negative voltage conversion chip. The power amplifier chip is connected to the first and second circuit chips. The power modulation chip and the negative voltage conversion chip are mounted on the modulation circuit board.

2. The standardized high power microwave component module according to claim 1, characterized in that The first circuit chip and the second circuit chip are fixed to the upper surface of the metal structure by means of a conductive adhesive, and the modulation circuit board is fixed to the lower surface of the metal structure by means of a conductive adhesive.

3. The standardized high power microwave component module according to claim 1, characterized in that The power amplifier chip is installed in a groove on the upper surface of the metal structure, and the depth of the groove is set according to the thickness of the power amplifier chip.

4. The standardized high power microwave component module according to claim 1, characterized in that The first RF connector is mounted on the first circuit chip, the second RF connector is welded inside the central support block of the metal structure, and the wave needle of the second RF connector is electrically connected to the second circuit chip.

5. The standardized high power microwave component module according to claim 1, wherein: The power modulation chip is connected to the drain of the power amplifier chip via a first feeding insulator, and the negative voltage conversion chip is connected to the gate of the power amplifier chip via a first feeding insulator.

6. The standardized high power microwave component module according to claim 1, characterized in that The input end of the power modulation chip is connected to the external power supply via a second feeding insulator, and the input end of the negative voltage conversion chip is connected to the external power supply via a second feeding insulator.

7. The standardized high power microwave component module according to claim 1, characterized in that The power amplifier chip is connected to the first circuit chip and the second circuit chip via a gold ribbon, and the metal structural member, the upper cover plate and the lower cover plate are made of aluminum material.

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