Semiconductor nanoparticles, method for producing semiconductor nanoparticles, ink composition, semiconductor nanoparticle composite, color conversion structure, and electronic device

Abstract

Disclosed are a semiconductor nanoparticle, a method of preparing the semiconductor nanoparticle, and an ink composition, a semiconductor nanoparticle composite, a color conversion structure, and an electronic device including the semiconductor nanoparticle. The semiconductor nanoparticles include silver, indium, gallium, and sulfur, and a molar ratio of gallium to indium (Ga / In) is greater than or equal to about 0.8: 1 and less than or equal to about 20: 1. The semiconductor nanoparticles are substantially free of copper and configured to emit red light. The emission peak wavelength of the red light is greater than or equal to about 600 nm and less than or equal to about 650 nm, and the full width at half maximum (FWHM) is greater than or equal to about 5 nm and less than or equal to about 90 nm.

Description

[0001] This application is based upon and claims the benefit of priority from Korean Patent Application No. 10-2024-0019937 filed on February 8, 2024, in the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference. Technical Field

[0002] Disclosed are semiconductor nanoparticles, a method for preparing the semiconductor nanoparticles, and an ink composition, a semiconductor nanoparticle composite, a color conversion structure, and an electronic device comprising the semiconductor nanoparticles. Background Art

[0003] Semiconductor nanoparticles can exhibit different aspects, characteristics, or properties compared to corresponding bulk materials having substantially the same composition. For example, semiconductor nanoparticles can have different physical properties (e.g., energy band gap, luminescence properties, etc.) based on their nanostructure. Semiconductor nanoparticles can be configured to emit light when excited by incident light or an applied voltage. Luminescent nanostructures can be suitable for use in various devices (e.g., display panels or electronic devices including display panels). From an environmental perspective, it is desirable to develop luminescent nanoparticles that do not contain harmful heavy metals (such as cadmium) and that also achieve improvements in one or more luminescent or optical properties. Summary of the Invention

[0004] Aspects relate to red-emitting, cadmium-free semiconductor nanoparticles that exhibit enhanced absorption.

[0005] Aspects relate to a method for manufacturing semiconductor nanoparticles.

[0006] Aspects relate to a composition (eg, an ink composition) including semiconductor nanoparticles.

[0007] Aspects relate to a color conversion panel including semiconductor nanoparticles.

[0008] Aspects relate to an electronic device (eg, a display device) including semiconductor nanoparticles or a color conversion panel.

[0009] In an embodiment, the semiconductor nanoparticles include silver, indium, gallium, and sulfur. The semiconductor nanoparticles are substantially free of copper. The molar ratio of gallium to indium is greater than or equal to approximately 0.8:1 (e.g., greater than 1:1) and less than or equal to approximately 20:1. The semiconductor nanoparticles are configured to emit red light. The peak emission wavelength of the red light is greater than or equal to approximately 600 nm and less than or equal to approximately 650 nm. The full width at half maximum (FWHM) of the red light is greater than or equal to approximately 5 nm and less than or equal to approximately 90 nm, or less than or equal to approximately 84 nm. The FWHM of the red light may be greater than or equal to approximately 10 nm and less than or equal to approximately 50 nm. In the semiconductor nanoparticles, the molar ratio of gallium to indium (Ga:In) may be greater than or equal to approximately 0.8:1, or greater than or equal to approximately 1:1 and less than or equal to approximately 3.5:1. In the semiconductor nanoparticles, a molar ratio of gallium to indium (Ga:In) may be greater than or equal to about 1.1:1, greater than or equal to about 1.3:1, greater than or equal to about 1.5:1, or greater than or equal to about 2:1 and less than or equal to about 15:1 or less than or equal to about 10:1.

[0010] The semiconductor nanoparticles may include an 11-13-16 group compound containing silver, indium, gallium, and sulfur. The semiconductor nanoparticles may include a first semiconductor nanocrystal containing silver, indium, gallium, and sulfur, and a second semiconductor nanocrystal containing gallium and sulfur. The semiconductor nanoparticles may include a first semiconductor nanocrystal containing silver, indium, sulfur, and optionally selenium, and a second semiconductor nanocrystal containing gallium, sulfur, and optionally silver. The semiconductor nanoparticles have a core-shell structure having: a core comprising the first semiconductor nanocrystal; and a shell comprising the second semiconductor nanocrystal and disposed on the core. The shell or the second semiconductor nanocrystal may also include selenium.

[0011] In embodiments, the semiconductor nanoparticles may or may not also include zinc, copper, or a combination thereof.

[0012] In an embodiment, the semiconductor nanoparticles may further include a semiconductor nanocrystal (eg, an additional semiconductor nanocrystal) (eg, a third semiconductor nanocrystal or a fourth semiconductor nanocrystal) containing zinc, sulfur, and optionally gallium.

[0013] In the semiconductor nanoparticles, a molar ratio of silver to indium (Ag:In) may be greater than or equal to about 0.5:1, greater than or equal to about 1:1, greater than or equal to about 1.1:1, or greater than or equal to about 1.5:1 and less than or equal to about 2.8:1, less than or equal to about 2.5:1, or less than or equal to about 2:1.

[0014] In the semiconductor nanoparticles, the molar ratio of the sum of indium and gallium to silver [(In+Ga):Ag] may be greater than or equal to about 1.5:1, greater than or equal to about 1.7:1, or greater than or equal to about 2:1 and less than or equal to about 3.5:1, less than or equal to about 3:1, less than or equal to about 2.7:1, or less than or equal to about 2.2:1.

[0015] In the semiconductor nanoparticles, a molar ratio of indium to sulfur (In:S) may be greater than or equal to about 0.13:1 or greater than or equal to about 0.19:1 and less than or equal to about 0.5:1 or less than or equal to about 0.25:1.

[0016] In the semiconductor nanoparticles, a molar ratio of sulfur to indium (S:In) may be greater than or equal to about 2:1 or greater than or equal to about 3.2:1 and less than or equal to about 10:1 or less than or equal to about 7.7:1.

[0017] In the semiconductor nanoparticles, a molar ratio of gallium to sulfur (Ga:S) may be greater than or equal to about 0.29:1, greater than or equal to about 0.48:1, or greater than or equal to about 0.5:1 and less than or equal to about 0.9:1 or less than or equal to about 0.8:1.

[0018] In the semiconductor nanoparticles, the molar ratio of the sum of indium and gallium to sulfur [(In+Ga):S] may be greater than or equal to about 0.54:1, greater than or equal to about 0.56:1, greater than or equal to about 0.7:1, or greater than or equal to about 0.9:1 and less than or equal to about 1.5:1, less than or equal to about 1.1:1, or less than or equal to about 1:1.

[0019] In the semiconductor nanoparticles, a molar ratio of silver to sulfur (Ag:S) may be greater than or equal to about 0.25:1 or greater than or equal to about 0.3:1 and less than or equal to about 0.5:1 or less than or equal to about 0.45:1.

[0020] In the semiconductor nanoparticles, a molar ratio of silver to the sum of silver, indium, and gallium [Ag:(Ag+In+Ga)] may be greater than or equal to about 0.2:1 or greater than or equal to about 0.3:1 and less than or equal to about 0.45:1 or less than or equal to about 0.40:1.

[0021] In the semiconductor nanoparticles, the molar ratio of gallium to the sum of silver, indium and gallium [Ga:(Ag+In+Ga)] may be greater than or equal to about 0.32:1 or greater than or equal to about 0.33:1 and less than or equal to about 0.6:1, less than or equal to about 0.55:1, or less than or equal to about 0.49:1.

[0022] In the semiconductor nanoparticles, a molar ratio of sulfur to the sum of silver, indium, and gallium [S:(Ag+In+Ga)] may be greater than or equal to about 0.7:1 or greater than or equal to about 0.9:1 and less than or equal to about 1.2:1 or less than or equal to about 1.14:1.

[0023] The semiconductor nanoparticles, the first semiconductor nanocrystals, or the second semiconductor nanocrystals may further include selenium. If present, the molar ratio of selenium to indium in the semiconductor nanoparticles may be greater than or equal to about 0.001:1, greater than or equal to about 0.005:1, greater than or equal to about 0.01:1, greater than or equal to about 0.05:1, greater than or equal to about 0.08:1, greater than or equal to about 0.09:1, or greater than or equal to about 0.1:1. The molar ratio of selenium to indium in the semiconductor nanoparticles may be less than or equal to about 0.5:1, less than or equal to about 0.2:1, or less than or equal to about 0.15:1.

[0024] The semiconductor nanoparticles may have a quantum yield of greater than or equal to about 10% or greater than or equal to about 30%.The peak emission wavelength of the first light or semiconductor nanoparticles may be greater than or equal to about 602 nm and less than or equal to about 645 nm.

[0025] The full width at half maximum (FWHM) of the optical or semiconductor nanoparticles may be greater than or equal to about 15 nm and less than or equal to about 84 nm, less than or equal to about 70 nm, less than or equal to about 49 nm, or less than or equal to about 48 nm.

[0026] In the ultraviolet-visible (UV-Vis) absorption spectrum, the semiconductor nanoparticles may have an optical density per weight (unit: per centimeter per gram liter (L)) greater than or equal to about 0.8 and less than or equal to about 4 (for example, at 450 nm). g -1 cm -1 ) or per centimeter per milliliter (mL) mg -1 cm -1 )).

[0027] In the UV-Vis absorption spectrum, the semiconductor nanoparticles may have an optical density per weight (unit: L) greater than or equal to about 2 and less than or equal to about 3.5 (for example, at 450 nm). g -1 cm -1 or mL mg -1 cm -1 ).

[0028] In a UV-Vis absorption spectrum, the semiconductor nanoparticles may have a ratio of absorption at 550 nanometers (nm) to absorption at 350 nm of greater than or equal to about 0.05:1 and less than or equal to about 0.5:1.

[0029] In an embodiment, a method of manufacturing semiconductor nanoparticles comprises the following steps: A silver precursor, a first sulfur precursor, and an indium precursor are contacted in a first reaction medium comprising a first organic solvent, and the first reaction medium is heated to a reaction temperature to produce a first semiconductor nanocrystal comprising silver, indium, and sulfur, wherein the amount of the first sulfur precursor is greater than or equal to about 2.5 moles and less than or equal to about 20 moles per mole of indium precursor; and a second sulfur precursor, the first semiconductor nanocrystal, and a gallium precursor are contacted (e.g., reacted) in a second reaction medium comprising a second organic solvent.

[0030] In the method, the amount of the first sulfur precursor may be greater than or equal to about 4 moles and less than or equal to about 8 moles per mole of the indium precursor.

[0031] The predetermined temperature may be greater than about 210°C or greater than or equal to about 230°C and less than or equal to about 300°C or less than or equal to about 260°C.

[0032] In this method, the first reaction medium may further include an organic ligand.

[0033] In an embodiment, the ink composition may include semiconductor nanoparticles and a liquid carrier. The liquid carrier may include a polymerizable monomer, an organic solvent, or a combination thereof. The ink composition may also include or may be substantially free of a volatile organic solvent. The ink composition may also include fine metal oxide particles.

[0034] In an embodiment, the semiconductor nanoparticle composite may include a polymer matrix and semiconductor nanoparticles dispersed within the polymer matrix.

[0035] A color conversion layer or color conversion structure (hereinafter referred to as a color conversion layer) including a color conversion region containing the aforementioned semiconductor nanoparticles is provided. In an embodiment, a color conversion panel may include a color conversion layer including the color conversion region and, optionally, partition walls defining each region of the color conversion layer. The color conversion region (e.g., a black matrix, a bank, a pixel-defining layer) may include a first region corresponding to a first pixel. The first region may include a first composite, and the first composite may include a matrix and semiconductor nanoparticles dispersed in the matrix, wherein the first region is configured to emit a first light.

[0036] Embodiments relate to a display device (or display panel) including a light source and semiconductor nanoparticles (or a composite including semiconductor nanoparticles, a color conversion layer, a color conversion panel, etc.). In embodiments, the display panel may include a light emitting panel (or light source), a color conversion panel, and optionally a light-transmitting layer positioned between the light emitting panel and the color conversion panel.

[0037] The light emitting panel (or light source) can be configured to provide incident light to the color conversion layer (or color conversion panel). The incident light can include blue light and optionally green light. The blue light can have a peak emission wavelength in the range of 440 nm to 460 nm or 450 nm to 455 nm.

[0038] The light source may include an organic light emitting diode, a micro-LED, a mini-LED, an LED containing nanorods, or a combination thereof.

[0039] In an embodiment, an electronic device (or a display device) may include a color conversion panel or a display panel.

[0040] In embodiments, the display device may include a display device for an augmented reality / virtual reality device, a mobile terminal device, a monitor, a laptop computer, a television, an electronic billboard, a camera, an automotive electronic component, and the like.

[0041] The semiconductor nanoparticles of the embodiments can be used as light-emitting materials in color conversion pixels due to their ability to emit red light while achieving enhanced light absorption and narrow full width at half maximum (FWHM). BRIEF DESCRIPTION OF THE DRAWINGS

[0042] The above and other aspects, features and advantages of certain exemplary embodiments will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0043] Figure 1A : is a flowchart showing a pattern forming process (photolithography) using the ink composition of the example.

[0044] Figure 1B : is a flowchart showing a pattern forming process (inkjet method) using the ink composition of the example.

[0045] Figure 2A is a schematic cross-sectional view of a color conversion panel according to an embodiment.

[0046] Figure 2B is a cross-sectional view of an electronic device (display device) including a color conversion panel according to an embodiment.

[0047] Figure 3A is a perspective view illustrating an example of a display panel including a color conversion panel according to an embodiment.

[0048] Figure 3B is an exploded view of a display device according to an embodiment.

[0049] Figure 3C yes Figure 3A A cross-sectional view of a display panel.

[0050] Figure 4 is an exploded view of a display device according to an embodiment.

[0051] Figure 5A It shows Figure 3A A plan view of an example of a pixel arrangement of a display panel.

[0052] Figure 5B 、 Figure 5C 、 Figure 5D and Figure 5E Each is a cross-sectional view showing an example of a light emitting device according to the embodiment.

[0053] Figure 6 It is taken along line IV-IV Figure 5A A cross-sectional view of a display panel.

[0054] Figure 7A is a schematic cross-sectional view of a display device (eg, a liquid crystal display device) according to an embodiment.

[0055] Figure 7B is a schematic cross-sectional view of an electronic device (eg, a light emitting device) according to an embodiment.

[0056] Figure 8 Graphs of absorbance (arbitrary unit, au) and wavelength (nanometers, nm) of the UV-Vis absorption spectra of the semiconductor nanoparticles prepared in Examples 1, 2, and 3 are shown.

[0057] Figure 9 is a transmission electron microscope (TEM) analysis image of the semiconductor nanoparticles synthesized in Example 1.

[0058] Figure 10 is a TEM analysis image of the semiconductor nanoparticles synthesized in Example 2. DETAILED DESCRIPTION

[0059] The advantages and features of the technology described below and the methods for implementing them will become apparent with reference to the exemplary embodiments described in further detail below in conjunction with the accompanying drawings. However, the embodiments should not be interpreted as being limited to the exemplary embodiments set forth herein. Unless otherwise defined, all terms (including technical and scientific terms) as used herein may be defined as commonly understood by those of ordinary skill in the art. Unless explicitly defined, terms defined in general dictionaries may not be interpreted in an idealized or exaggerated manner. In addition, unless explicitly described to the contrary, the word "include" and variations such as "comprise" or "comprising" will be understood to imply the inclusion of the stated elements but not to exclude any other elements.

[0060] In the drawings, the thickness of layers, films, panels, regions, etc. are exaggerated for clarity. Like reference numerals refer to like elements throughout the specification.

[0061] It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" another element, there are no intervening elements present.

[0062] As used herein, the singular forms "a," "an," and "the" are intended to include plural forms including "at least one," unless the context clearly indicates otherwise. For example, the term "semiconductor nanoparticle" may refer to a single semiconductor nanoparticle or may refer to a plurality of semiconductor nanoparticles. "At least one" is not to be construed as limited to "one" or "an." "Or" means "and / or." As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0063] It will be understood that although the terms "first," "second," "third," etc. may be used herein to describe various elements, components, regions, layers, and / or parts, these elements, components, regions, layers, and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, or part from another element, component, region, layer, or part. Thus, a first element, component, region, layer, or part discussed below may be referred to as a second element, component, region, layer, or part without departing from the teachings of the given embodiments.

[0064] Exemplary embodiments are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments. As such, variations from the illustrated shapes due to, for example, manufacturing techniques and / or tolerances are to be expected. Therefore, the embodiments described herein should not be construed as limited to the specific shapes of the regions as shown herein, but are to include deviations in shape due to, for example, manufacturing. For example, a region shown or described as flat may typically have rough and / or nonlinear features. Furthermore, sharp angles shown may be rounded. Therefore, the regions shown in the figures are schematic in nature, and their shapes are not intended to illustrate the precise shape of the regions and are not intended to limit the scope of the present claims.

[0065] As used herein, "about" or "approximately" is inclusive of the stated value and means within an acceptable range of deviation from the particular value as determined by one of ordinary skill in the art taking into account the measurements in question and errors associated with measurement of the particular quantity (i.e., limitations of the measurement system). For example, "about" can mean within one or more standard deviations, or within ±10%, ±5%, or ±3% of the stated value.

[0066] As used herein, the expression "does not include cadmium (or other hazardous heavy metals)" or "cadmium-free" may refer to a situation in which the concentration of cadmium (or other hazardous heavy metals) may be less than or equal to about 1000 parts per million by weight (ppmw), less than or equal to about 100 ppmw, less than or equal to about 50 ppmw, less than or equal to about 10 ppmw, less than or equal to about 1 ppmw, less than or equal to about 0.1 ppmw, less than or equal to about 0.01 ppmw, or zero. In embodiments, a certain amount of cadmium (or other hazardous heavy metals) may be substantially absent, or, if present, the amount of cadmium (or other hazardous heavy metals) may be less than or equal to the detection limit or as an impurity level for a given analytical tool.

[0067] As used herein, the expression "substantially free" of a substance (e.g., copper, other metals, or solvents) means that the concentration of the substance may be less than or equal to about 1000 parts per million by weight (ppmw), less than or equal to about 100 ppmw, less than or equal to about 50 ppmw, less than or equal to about 10 ppmw, less than or equal to about 1 ppmw, less than or equal to about 0.1 ppmw, less than or equal to about 0.01 ppmw, or zero. In embodiments, substantially free of a substance means that the substance may not be present in an amount, or, if present, the amount of the substance may be less than or equal to the detection limit or impurity level for a given analytical tool.

[0068] Hereinafter, as used herein, when no definition is otherwise provided, "substituted" refers to a compound or moiety in which at least one hydrogen is replaced by a member selected from the group consisting of C1 to C30 alkyl, C2 to C30 alkenyl, C2 to C30 alkynyl, C6 to C30 aryl, C7 to C30 alkylaryl, C7 to C30 arylalkyl, C6 to C30 aryloxy, C6 to C30 arylthio, C1 to C30 alkoxy, C1 to C30 alkylthio ... C3 to C30 heteroalkyl, C3 to C30 heteroalkylaryl, C2 to C30 alkylheteroaryl, C2 to C30 heteroarylalkyl, C1 to C30 heteroaryloxy, C1 to C30 heteroarylthio, C3 to C30 cycloalkyl, C3 to C15 cycloalkenyl, C6 to C30 cycloalkynyl, C2 to C30 heterocycloalkyl, halogen (-F, -Cl, -Br or -I), hydroxyl (-OH), nitro (-NO2), cyano The alkyl group may be substituted with a substituent selected from the group consisting of: a hydroxyl group (-CN), an amino group or an amine group (-NRR', wherein R and R' are independently hydrogen or a C1 to C6 alkyl group), an azido group (-N3), an amidine group (-C(=NH)NH2), a hydrazine group (-NHNH2), a hydrazone group (=N(NH2)), an aldehyde group (-C(=O)H), a carbamoyl group (-C(O)NH2), a thiol group (-SH), an ester group (-C(=O)OR, wherein R is a C1 to C6 alkyl group or a C6 to C12 aryl group), a carboxylic acid group (-COOH) or a salt thereof (-C(=O)OM, wherein M is an organic or inorganic cation), a sulfonic acid group (-SO3H) or a salt thereof (-SO3M, wherein M is an organic or inorganic cation), a phosphate group (-PO3H2) or a salt thereof (-PO3MH or -PO3M2, wherein M is an organic or inorganic cation), or a combination thereof.

[0069] In addition, when no definition is otherwise provided below, “hetero” means a case where 1 to 3 hetero atoms selected from N, O, P, Si, S, Se, Ge, and B are included.

[0070] In addition, the term "aliphatic hydrocarbon group" as used herein refers to a C1 to C30 straight chain or branched alkyl group, a C2 to C30 straight chain or branched alkenyl group, or a C2 to C30 straight chain or branched alkynyl group, and the term "aromatic organic group" as used herein refers to a C6 to C30 aryl group or a C2 to C30 heteroaryl group.

[0071] As used herein, the term "(meth)acrylate" refers to acrylate and / or methacrylate.

[0072] As used herein, the term "group" refers to a group in the periodic table of elements.

[0073] As used herein, the terms "nanoparticle" and "nanostructure" refer to structures having at least one region or characteristic dimension that is nanoscale in size. In an embodiment, the size of the nanoparticle or nanostructure can be less than about 500nm, less than about 300nm, less than about 250nm, less than about 150nm, less than about 100nm, less than about 50nm or less than about 30nm. The nanoparticle or nanostructure can have any shape, such as nanowires, nanorods, nanotubes, multi-arm shapes with two or more arms, nanodots, etc., but embodiments are not limited thereto. The nanoparticle or nanostructure can be, for example, substantially crystalline, substantially monocrystalline, polycrystalline, amorphous or a combination thereof.

[0074] Quantum dots can be, for example, semiconductor-containing nanocrystalline particles that can exhibit quantum confinement effects or exciton confinement effects, and are a type of light-emitting nanostructure (e.g., capable of emitting light through energy excitation). Here, unless otherwise specifically defined, the shape of a "quantum dot" or nanoparticle is not limited.

[0075] As used herein, the term "dispersion" refers to a dispersion in which the dispersed phase is a solid and the continuous medium comprises a liquid or solid different from the dispersed phase. It will be understood that a "dispersion" can be a colloidal dispersion in which the dispersed phase has a size greater than or equal to about 1 nm (e.g., greater than or equal to about 2 nm, greater than or equal to about 3 nm, or greater than or equal to about 4 nm) and a few micrometers (μm) or less (e.g., less than or equal to about 2 μm, less than or equal to about 1 μm, less than or equal to about 900 nm, less than or equal to about 800 nm, less than or equal to about 700 nm, less than or equal to about 600 nm, or less than or equal to about 500 nm).

[0076] Here, a dimension (size, diameter, thickness, etc.) can be a value for a single entity or an average value for a plurality of nanoparticles. As used herein, the term "average" (e.g., the average size of a quantum dot) can be an average value or a median value. In embodiments, the average value can be a mean value.

[0077] As used herein, the term "peak emission wavelength (or emission peak wavelength)" is the wavelength at which a given emission spectrum of light reaches its maximum.

[0078] In embodiments, quantum efficiency can be readily and reproducibly determined using commercially available equipment (e.g., from Hitachi or Hamamatsu, etc.) and referring to instructions provided by, for example, the respective equipment manufacturers. Quantum efficiency (which may be used interchangeably with the term "quantum yield" (QY)) can be measured in liquid or solid state (in a composite). In embodiments, quantum efficiency (or quantum yield) is the ratio of photons emitted by a nanostructure or a population of nanostructures to photons absorbed. In embodiments, quantum efficiency can be measured by any method. For example, there are two methods for measuring fluorescence quantum yield or efficiency: absolute and relative. Quantum efficiency measured by an absolute method may be referred to as absolute quantum efficiency.

[0079] In the absolute method, quantum efficiency can be obtained by detecting the fluorescence of all samples using an integrating sphere. In the relative method, the quantum efficiency of an unknown sample can be calculated by comparing the fluorescence intensity of a standard dye (standard sample) with the fluorescence intensity of the unknown sample. Coumarin 153, coumarin 545, rhodamine 101 inner salt, anthracene, and rhodamine 6G can be used as standard dyes based on their photoluminescence (PL) wavelengths, but the embodiment is not limited thereto.

[0080] For example, the full width at half maximum (FWHM) and the maximum emission (eg, PL: photoluminescence, or EL: electroluminescence) wavelength can be measured by a luminescence spectrum (eg, photoluminescence spectrum or electroluminescence spectrum) obtained by a spectrophotometer such as a fluorescence spectrophotometer.

[0081] As used herein, the term "first absorption peak wavelength" refers to a wavelength at which a main peak first appears in the lowest energy region in an ultraviolet-visible (UV-Vis) absorption spectrum.

[0082] Semiconductor nanoparticles can be included in various electronic devices. The electrical properties and / or optical properties of semiconductor nanoparticles can be controlled, for example, by the elemental composition of the semiconductor nanoparticles, the size of the semiconductor nanoparticles, and / or the shape of the semiconductor nanoparticles. In an embodiment, the semiconductor nanoparticles can be semiconductor nanocrystal particles. Semiconductor nanoparticles such as quantum dots can have a relatively large surface area per unit volume and can therefore exhibit quantum confinement effects, exhibiting physical properties and / or optical properties that are different from those of corresponding bulk materials having the same composition. Therefore, semiconductor nanoparticles such as quantum dots can absorb energy supplied from an excitation source (e.g., incident light) to form an excited state that can emit energy corresponding to its band gap when relaxed.

[0083] Semiconductor nanoparticles can be used in various electronic devices, such as color conversion panels (or emissive color filters). These can include a white-light-emitting backlight unit and an absorptive color filter for a liquid crystal display device, and the backlight unit can include a quantum dot sheet. In a display device including a quantum dot-based color conversion panel or emissive color filter, a quantum dot layer, which serves as a luminescent material, can be positioned at the front of the display device, and blue light (excitation light) provided by a light source can be converted into green or red light by the quantum dot layer. In the color conversion panel, color conversion of incident light can occur relatively in front of the display device, and a wide viewing angle can be achieved through omnidirectional scattering of light. Emissive color filters can achieve reduced light loss. A color conversion panel can be an electronic device that includes a color conversion layer or color conversion structure.

[0084] In a display device including a color conversion panel, the properties of the luminescent material (e.g., optical properties, stability, etc.) can have a direct impact on the display quality of the display device. The luminescent material included in the color conversion panel, positioned relatively forward of the display device, can be expected to exhibit not only relatively high luminous efficiency but also relatively high absorbance relative to incident light. When a patterned film (e.g., a color filter) is used in the display device, reduced absorbance of incident light can directly cause blue light leakage, adversely affecting the display device's color reproducibility (e.g., DCI matching). Using an absorptive color filter to prevent blue light leakage can further reduce luminous efficiency. This reduced absorbance of the semiconductor nanoparticles can lead to reduced brightness in the display device incorporating them.

[0085] Semiconductor nanoparticles can exhibit properties (e.g., optical properties and / or stability) that can be suitable for display devices, but most of them may include cadmium-based compounds (e.g., cadmium chalcogenides). Cadmium causes serious environmental / health problems and is therefore one of the restricted elements in many countries. Therefore, in order to develop cadmium-free, environmentally friendly nanoparticles, nanocrystals based on III-V compounds have been intensively studied. However, cadmium-free nanoparticles including III-V compounds (e.g., indium phosphide) may cross technical limitations in terms of incident light absorbance and full width at half maximum. Therefore, there is still a need to develop environmentally friendly nanoparticles that can exhibit higher absorbance, narrower full width at half maximum, and higher luminous efficiency than cadmium-free nanoparticles based on III-V compounds (such as indium phosphide).

[0086] In an embodiment, the semiconductor nanoparticles may not contain cadmium. The semiconductor nanoparticles may not contain mercury, lead, or a combination thereof. In an embodiment, the semiconductor nanoparticles may include (contain) silver, indium, gallium, and sulfur (Group 11-13-16 compounds). The semiconductor nanoparticles may have a size or average size (hereinafter, referred to as size) greater than or equal to approximately 5 nm, or greater than or equal to approximately 10 nm, and less than or equal to approximately 50 nm, less than or equal to approximately 25 nm, or less than or equal to approximately 20 nm.

[0087] In an embodiment, the semiconductor nanoparticles may include silver, indium, sulfur, and gallium. The semiconductor nanoparticles may include a first semiconductor nanocrystal containing silver, indium, and sulfur (including Group Il-I3-I6 compounds). The first semiconductor nanocrystal may or may not further include zinc. The first semiconductor nanocrystal may or may not further include copper. The first semiconductor nanocrystal may or may not further include gallium. The first semiconductor nanocrystal may or may not further include selenium. In an embodiment, the first semiconductor nanocrystal may further include selenium.

[0088] The semiconductor nanoparticles can include: a second semiconductor nanocrystal having a composition different from that of the first semiconductor nanocrystal, including gallium, sulfur, and optionally silver; additional semiconductor nanocrystals (eg, a third semiconductor nanocrystal and / or a fourth semiconductor nanocrystal); or combinations thereof.

[0089] In an embodiment, the second semiconductor nanocrystal may include gallium and a chalcogenide (sulfur and optionally selenium). The second semiconductor nanocrystal may include a Group 13-16 compound, a Group 11-13-16 compound, or a combination thereof. The Group 13-16 compound may include gallium sulfide, gallium selenide, gallium selenide sulfide, indium sulfide, indium selenide, indium gallium sulfide, indium gallium selenide, indium gallium selenide sulfide, or a combination thereof. The Group 11-13-16 compound may include silver gallium sulfide, silver gallium selenide, silver gallium selenide sulfide, or a combination thereof. The second semiconductor nanocrystal may include gallium, sulfur, and selenium. The second semiconductor nanocrystal may include: a ternary alloy semiconductor material including silver, gallium, and sulfur; a ternary alloy semiconductor material including indium, gallium, and sulfur; a ternary alloy semiconductor material including gallium, sulfur, and selenium; a ternary alloy semiconductor material including zinc, gallium, and sulfur; a quaternary alloy semiconductor material including silver, gallium, zinc, and sulfur; or a combination thereof.

[0090] The additional semiconductor nanocrystals may include zinc, sulfur, and optionally gallium. In an embodiment, the third semiconductor nanocrystal may include zinc, gallium, and sulfur. The fourth semiconductor nanocrystal may include zinc and sulfur. The third semiconductor nanocrystal may include zinc gallium sulfide. The fourth semiconductor nanocrystal may include zinc sulfide.

[0091] The second semiconductor nanocrystal may cover at least a portion of the first semiconductor nanocrystal. The energy band gap of the second semiconductor nanocrystal may be different from the energy band gap of the first semiconductor nanocrystal. The energy band gap of the second semiconductor nanocrystal may be greater than the energy band gap of the first semiconductor nanocrystal. The energy band gap of the second semiconductor nanocrystal may be less than the energy band gap of the first semiconductor nanocrystal. The energy band gap of the additional semiconductor nanocrystal (e.g., the third semiconductor nanocrystal or the fourth semiconductor nanocrystal) may be greater than the energy band gap of the second semiconductor nanocrystal. The energy band gap of the additional semiconductor nanocrystal (e.g., the third semiconductor nanocrystal or the fourth semiconductor nanocrystal) may be greater than the energy band gap of the first semiconductor nanocrystal. The layer including the third semiconductor nanocrystal or the fourth semiconductor nanocrystal may be the outermost layer of the semiconductor nanoparticle.

[0092] The semiconductor nanoparticles may have a core-shell structure having a core and a shell disposed on the core. The core may include a first semiconductor nanocrystal, and the shell may include a second semiconductor nanocrystal. The shell may be a multilayer shell, and the multilayer shell may include a first shell layer disposed on the core, a second shell layer disposed on the first shell layer, and a third shell layer disposed on the second shell layer. The first shell layer may include a third semiconductor nanocrystal. The second shell layer may include a second semiconductor nanocrystal. The third shell layer may include additional semiconductor nanocrystals (e.g., a third semiconductor nanocrystal and / or a fourth semiconductor nanocrystal) containing (including) zinc, sulfur, and optionally gallium (a zinc chalcogenide or a zinc gallium chalcogenide).

[0093] In an embodiment, the semiconductor nanoparticles may include a core-multilayer shell structure, such as AgInS / GaS, AgInS / GaSSe, AgInS / AgGaS, AgInS / AgGaSSe, AgInS / GaS / ZnGaS, AgInS / GaSSe / ZnGaS, AgInS / AgGaS / ZnGaS, AgInS / AgGaS / ZnGaS, AgInS / AgGaSSe / ZnGaS, AgInS / GaS / Z nS, AgInS / GaSSe / ZnS, AgInS / AgGaS / ZnS, AgInS / AgGaSSe / ZnS, AgInS / GaS / ZnGaS / ZnS, AgInS / GaSSe / ZnGaS / ZnS, AgInS / AgGaS / ZnGaS / ZnS, AgInS / AgGaS / ZnS, AgInGaS / AgGaS / ZnGaS / ZnS, etc.

[0094] In semiconductor nanoparticles, the concentration of indium may vary radially. In semiconductor nanoparticles, the amount or concentration of indium in the interior of the semiconductor nanoparticle may differ from the amount or concentration of indium in the exterior of the particle. In embodiments, the amount or concentration of indium in the portion adjacent to the surface (e.g., the outermost layer or shell) may be lower than the amount or concentration of indium in the interior (or core) of the particle. In embodiments, the amount or concentration of zinc in the portion adjacent to the surface (e.g., in the outermost layer) may be higher than the amount or concentration of zinc in the interior (or core) of the particle. In semiconductor nanoparticles, the concentration of zinc may be higher in the exterior of the particle than in its interior. The core or first semiconductor nanocrystal may not include zinc. Gallium may exhibit a radial concentration gradient (e.g., increasing or decreasing) in the shell. In the shell, the concentration of gallium in the portion adjacent to the particle surface may be higher than the concentration of gallium in the portion adjacent to the core.

[0095] When incident light (e.g., blue light) is provided to a pixel and dispersed within a color conversion device (such as a color conversion panel) that includes a luminescent material, the incident light absorbed by the semiconductor nanoparticles dispersed within the pixel can be converted to light of a desired color (e.g., red light). Optical density is a parameter related to absorbance and can be used as a method to quantify the concentration of solutes or semiconductor nanoparticles. According to the Beer-Lambert law, absorbance is proportional to the concentration of semiconductor nanoparticles and the absorption coefficient in a given sample solution. Optical density can be measured as the optical attenuation per centimeter of material using, for example, a standard spectrometer with a 1-centimeter path length. The optical density of a solution containing nanoparticles can be easily and reproducibly measured using, for example, a commercially available UV-Vis spectrometer.

[0096] The optical density per unit weight of semiconductor nanoparticles can represent the absorption properties of the semiconductor nanoparticles. For example, to achieve a color conversion pixel, a given weight of semiconductor nanoparticles is added. Therefore, an increased number of semiconductor nanoparticles per weight (e.g., an increased concentration) is associated with an increased absorption of the semiconductor nanoparticles, which can result in improved absorption in the pixel.

[0097] In the field of eco-friendly, cadmium-free quantum dots, the development of semiconductor nanoparticles that can emit red light while exhibiting an increased absorption coefficient is desirable for applications in electronic devices with red pixels (e.g., display devices). If the semiconductor nanoparticles have an increased optical density per weight, the concentration of the semiconductor nanoparticles in the color-converting pixel can be increased, which can also contribute to increased absorption in the pixel.

[0098] For high absorption efficiency, the core-shell structure of semiconductor nanoparticles can be considered to increase the ratio of the core volume within the total volume of the core-shell semiconductor nanoparticle (which contributes to the actual absorption of blue light), while minimizing the volume of the shell, which does not contribute to absorption but plays an important role in physically separating excitons and surface defects, to enhance quantum efficiency. In addition, having a core with a composition having a high absorption coefficient can be desirable for increasing the light absorption efficiency of semiconductor nanoparticles.

[0099] Semiconductor nanoparticles of embodiments having the composition / structure described herein can be included in red pixels to achieve significantly increased absorption efficiency compared to conventional technologies.Semiconductor nanoparticles of embodiments can exhibit optical properties at levels suitable for use as red emitting materials within pixels.

[0100] The semiconductor nanoparticles of an embodiment may include silver, indium, gallium, and sulfur, and in the semiconductor nanoparticles, a molar ratio of gallium to indium is greater than about 1:1, or greater than or equal to about 1.5:1 and less than or equal to about 20:1. The semiconductor nanoparticles are configured to emit red light, and the red light may have a full width at half maximum (FWHM) greater than or equal to about 5 nm and less than or equal to about 90 nm, or greater than or equal to about 10 nm and less than or equal to about 50 nm.

[0101] The semiconductor nanoparticles may include an 11-13-16 group compound containing silver, indium, and sulfur. The semiconductor nanoparticles may include: a first semiconductor nanocrystal including (including) silver, indium, and sulfur (an 11-13-16 group compound); and a second semiconductor nanocrystal including (including) gallium and sulfur and optionally silver (an 13-16 group compound or an 11-13-16 group compound). The semiconductor nanoparticles may also include or may not include zinc. In an embodiment, the semiconductor nanoparticles may also include a third semiconductor nanocrystal including zinc, sulfur, and optionally gallium, a fourth semiconductor nanocrystal including zinc and sulfur, or a combination thereof. The semiconductor nanoparticles may have a core-shell structure. Details of the structures of the first semiconductor nanocrystal, the second semiconductor nanocrystal, the third semiconductor nanocrystal, the fourth semiconductor nanocrystal, and the semiconductor nanoparticles are as described herein.

[0102] The first semiconductor nanocrystal may have a size or average size (hereinafter referred to as "size") greater than or equal to about 3 nm, greater than or equal to about 3.3 nm, greater than or equal to about 3.4 nm, greater than or equal to about 3.5 nm, greater than or equal to about 4 nm, or greater than or equal to about 5 nm and less than or equal to about 20 nm, less than or equal to about 18 nm, less than or equal to about 16 nm, less than or equal to about 15 nm, less than or equal to about 13 nm, less than or equal to about 12 nm, less than or equal to about 11 nm, less than or equal to about 10 nm, less than or equal to about 7 nm, or less than or equal to about 4 nm. In an embodiment, the size of the first semiconductor nanocrystal or core may be in the range of about 3.5 nm to about 20 nm, about 4 nm to about 18 nm, about 4.2 nm to about 15 nm, about 4.5 nm to about 12 nm, about 5 nm to about 10 nm, about 7 nm to about 9 nm, or a combination thereof. Here, the size of the semiconductor nanoparticles or semiconductor nanocrystals may be an (average) diameter or an (average) equivalent diameter. The size of semiconductor nanoparticles or semiconductor nanocrystals can be determined by appropriate means (eg, electron microscopy analysis, ICP-AES and optical properties or X-ray diffraction (XRD) analysis, etc.).

[0103] In this specification, unless otherwise specified, ratios between elements are molar ratios.

[0104] In the first semiconductor nanocrystal, a molar ratio of indium to silver (In:Ag) may be greater than or equal to about 2:1, greater than or equal to about 2.2:1, greater than or equal to about 2.4:1, or greater than or equal to about 2.8:1 and less than or equal to about 4:1, less than or equal to about 3.7:1, or less than or equal to about 2.6:1.

[0105] In the first semiconductor nanocrystal, a molar ratio of sulfur to silver (S:Ag) may be greater than or equal to about 3:1, greater than or equal to about 3.8:1, greater than or equal to about 4:1, or greater than or equal to about 4.5:1 and less than or equal to about 7:1, less than or equal to about 4.7:1, or less than or equal to about 4.5:1.

[0106] In the first semiconductor nanocrystal, the molar ratio of indium to sulfur (In:S) may be greater than or equal to about 0.5:1, greater than or equal to about 0.55:1, greater than or equal to about 0.58:1, greater than or equal to about 0.59:1, or greater than or equal to about 0.6:1 and less than or equal to about 1.5:1, less than or equal to about 1:1, less than or equal to about 0.9:1, less than or equal to about 0.8:1, less than or equal to about 0.7:1, or less than or equal to about 0.65:1.

[0107] In the first semiconductor nanocrystal, the molar ratio of the sum of indium and silver to sulfur ((In+Ag):S) may be greater than or equal to about 0.4:1, greater than or equal to about 0.6:1, greater than or equal to about 0.79:1, greater than or equal to about 0.8:1, greater than or equal to about 0.82:1, greater than or equal to about 0.83:1, greater than or equal to about 0.84:1, or greater than or equal to about 0.85:1 and less than or equal to about 1.5:1, less than or equal to about 1.3:1, less than or equal to about 1:1, less than or equal to about 0.95:1, less than or equal to about 0.91:1, or less than or equal to about 0.89:1.

[0108] In the first semiconductor nanocrystal, the molar ratio of the sum of indium and sulfur to silver ((In+S):Ag) may be greater than or equal to about 3.8:1, greater than or equal to about 4:1, greater than or equal to about 4.5:1, greater than or equal to about 5:1, greater than or equal to about 5.5:1, greater than or equal to about 6:1, greater than or equal to about 6.2:1, greater than or equal to about 6.4:1, greater than or equal to about 6.5:1, or greater than or equal to about 6.8:1 and less than or equal to about 8:1, less than or equal to about 7.4:1, less than or equal to about 7.2:1, less than or equal to about 7.1:1, or less than or equal to about 6.9:1.

[0109] The first semiconductor nanocrystal or semiconductor nanoparticle may or may not further include zinc.The first semiconductor nanocrystal may or may not further include selenium.

[0110] The semiconductor nanoparticles or first semiconductor nanocrystals may or may not further include lithium. The semiconductor nanoparticles or first semiconductor nanocrystals may or may not further include an alkali metal (eg, lithium, sodium, potassium, etc.).

[0111] In the semiconductor nanoparticles, the molar ratio of gallium to indium (Ga:In) may be greater than or equal to about 0.8:1, greater than or equal to about 0.85:1, greater than or equal to about 0.9:1, greater than or equal to about 0.95:1, greater than or equal to about 1:1, greater than or equal to about 1.1:1, greater than or equal to about 1.2:1, greater than or equal to about 1.3:1, greater than or equal to about 1.5:1, greater than or equal to about 1.7:1, greater than or equal to about 1.9:1, greater than or equal to about 2:1, greater than or equal to about 2.1:1, greater than or equal to about 2.3:1, greater than or equal to about 2.4:1, greater than or equal to about 2.5:1, greater than or equal to about : 1, less than or equal to about 2.9: 1, less than or equal to about 2.8: 1, less than or equal to about 2.6: 1, less than or equal to about 2.65: 1, less than or equal to about 2.7: 1, less than or equal to about 2.8: 1, less than or equal to about 2.85: 1, less than or equal to about 2.9: 1, or greater than or equal to about 3: 1 and less than or equal to about 20: 1, less than or equal to about 10: 1, less than or equal to about 5: 1, less than or equal to about 4.5: 1, less than or equal to about 3.8: 1, less than or equal to about 3.5: 1, less than or equal to about 3.3: 1, less than or equal to about 3.1: 1, less than or equal to about 2.9: 1, less than or equal to about 2.88: 1, less than or equal to about 2.69: 1, or less than or equal to about 2.47: 1.

[0112] In the semiconductor nanoparticles, the molar ratio of gallium to the sum of indium and gallium (Ga:(In+Ga)) may be greater than or equal to about 0.5:1, greater than or equal to about 0.51:1, greater than or equal to about 0.52:1, greater than or equal to about 0.54:1, greater than or equal to about 0.545:1, greater than or equal to about 0.55:1, greater than or equal to about 0.56:1, greater than or equal to about 0.57:1, greater than or equal to about 0.59:1, greater than or equal to about 0.6:1, greater than or equal to about 0.63:1, or greater than or equal to about 0.65:1. :1, greater than or equal to about 0.68:1, greater than or equal to about 0.7:1, greater than or equal to about 0.71:1, greater than or equal to about 0.72:1 or greater than or equal to about 0.74:1 and less than or equal to about 0.99:1, less than or equal to about 0.9:1, less than or equal to about 0.85:1, less than or equal to about 0.8:1, less than or equal to about 0.75:1, less than or equal to about 0.745:1, less than or equal to about 0.741:1, less than or equal to about 0.728:1 or less than or equal to about 0.712:1.

[0113] In the semiconductor nanoparticles, the molar ratio of silver to indium (Ag:In) may be greater than or equal to about 0.5:1, greater than or equal to about 0.7:1, greater than or equal to about 0.8:1, greater than or equal to about 0.9:1, greater than or equal to about 0.94:1, greater than or equal to about 1:1, greater than or equal to about 1.2:1, greater than or equal to about 1.3:1, greater than or equal to about 1.4:1, greater than or equal to about 1.46:1, greater than or equal to about 1.48:1, greater than or equal to about 1.5:1, greater than or equal to about 1.55:1, greater than or equal to about 1.7:1, greater than or equal to about 1.75:1, or greater than or equal to about 1. 8:1 and less than or equal to about 5:1, less than or equal to about 4:1, less than or equal to about 3:1, less than or equal to about 2.7:1, less than or equal to about 2.6:1, less than or equal to about 2.5:1, less than or equal to about 2.4:1, less than or equal to about 2.3:1, less than or equal to about 2.1:1, less than or equal to about 2:1, less than or equal to about 1.9:1, less than or equal to about 1.85:1, less than or equal to about 1.7:1, less than or equal to about 1.65:1, less than or equal to about 1.57:1, less than or equal to about 1.47:1, less than or equal to about 1.35:1, or less than or equal to about 1.25:1.

[0114] In the semiconductor nanoparticles, the molar ratio of gallium to silver (Ga:Ag) may be greater than or equal to about 0.8:1, greater than or equal to about 0.85:1, greater than or equal to about 0.9:1, greater than or equal to about 0.94:1, greater than or equal to about 0.99:1, greater than or equal to about 1:1, greater than or equal to about 1.1:1, greater than or equal to about 1.15:1, greater than or equal to about 1.2:1, greater than or equal to about 1.22:1, greater than or equal to about 1.29:1, greater than or equal to about 1.3:1, greater than or equal to about 1.33:1, greater than or equal to about 1.34:1, greater than or equal to about 1.36:1, greater than or equal to about 1.39:1, greater than or equal to about 1.4:1, greater than or equal to about 1.46:1, greater than or equal to about 1.48:1, greater than or equal to about 1.5:1, or greater than or equal to about 1.54:1. :1, greater than or equal to about 1.57:1, greater than or equal to about 1.6:1 or greater than or equal to about 1.65:1 and less than or equal to about 3:1, less than or equal to about 2.9:1, less than or equal to about 2.8:1, less than or equal to about 2.75:1, less than or equal to about 2.6:1, less than or equal to about 2.5:1, less than or equal to about 2.2:1, less than or equal to about 2:1, less than or equal to about 1.9:1, less than or equal to about 1.8:1, less than or equal to about 1.75:1, less than or equal to about 1.7:1, less than or equal to about 1.65:1, less than or equal to about 1.6:1, less than or equal to about 1.58:1, less than or equal to about 1.55:1, less than or equal to about 1.5:1, less than or equal to about 1.45:1, less than or equal to about 1.4:1, or less than or equal to about 1.35:1.

[0115] In the semiconductor nanoparticles, a molar ratio of the sum of indium and gallium to silver ((In+Ga):Ag) may be greater than or equal to about 1.4:1, greater than or equal to about 1.41:1, greater than or equal to about 1.43:1, greater than or equal to about 1.45:1, greater than or equal to about 1.46:1, greater than or equal to about 1.48:1, greater than or equal to about 1.5:1, greater than or equal to about 1.56:1, greater than or equal to about 1.68:1, greater than or equal to about 1.7:1. 1, greater than or equal to about 1.74:1, greater than or equal to about 1.81:1, greater than or equal to about 1.9:1, greater than or equal to about 1.94:1, greater than or equal to about 2.1:1, or greater than or equal to about 2.3:1 and less than or equal to about 3.5:1, less than or equal to about 3:1, less than or equal to about 2.2:1, less than or equal to about 2:1, less than or equal to about 1.96:1, less than or equal to about 1.95:1, or less than or equal to about 1.9:1.

[0116] In the semiconductor nanoparticles, the molar ratio of indium to sulfur (In:S) may be greater than or equal to about 0.18:1, greater than or equal to about 0.19:1, greater than or equal to about 0.22:1, greater than or equal to about 0.23:1, greater than or equal to about 0.25:1, greater than or equal to about 0.26:1, greater than or equal to about 0.27:1, greater than or equal to about 0.28:1, greater than or equal to about 0.29:1, greater than or equal to about 0.3:1, or greater than or equal to about 0. .31:1 and less than or equal to about 0.5:1, less than or equal to about 0.35:1, less than or equal to about 0.3:1, less than or equal to about 0.295:1, less than or equal to about 0.29:1, less than or equal to about 0.28:1, less than or equal to about 0.275:1, less than or equal to about 0.25:1, less than or equal to about 0.24:1, less than or equal to about 0.21:1, less than or equal to about 0.2:1 or less than or equal to about 0.195:1.

[0117] In the semiconductor nanoparticles, the molar ratio of sulfur to indium (S:In) may be greater than or equal to about 3.2:1, greater than or equal to about 3.3:1, greater than or equal to about 3.4:1, greater than or equal to about 3.43:1, greater than or equal to about 3.5:1, greater than or equal to about 3.6:1, greater than or equal to about 3.7:1, greater than or equal to about 3.8:1, greater than or equal to about 3.82:1, greater than or equal to about 3.9:1, greater than or equal to about 4:1, greater than or equal to about 4.1:1, greater than or equal to about 4.2:1, greater than or equal to about 4.3:1, greater than or equal to about 4.4:1, greater than or equal to about 4.5:1, or greater than or equal to about 4.6:1. 6:1, greater than or equal to about 4.7:1, greater than or equal to about 4.8:1, greater than or equal to about 4.9:1, greater than or equal to about 5:1, or greater than or equal to about 5.2:1 and less than or equal to about 10.5:1, less than or equal to about 10:1, less than or equal to about 9.5:1, less than or equal to about 9:1, less than or equal to about 8.5:1, less than or equal to about 8:1, less than or equal to about 7.5:1, less than or equal to about 7:1, less than or equal to about 6.5:1, less than or equal to about 6:1, less than or equal to about 5.5:1, less than or equal to about 5.3:1, less than or equal to about 5.2:1, or less than or equal to about 4.55:1.

[0118] In the semiconductor nanoparticles, the molar ratio of gallium to sulfur (Ga:S) may be greater than or equal to about 0.25:1, greater than or equal to about 0.27:1, greater than or equal to about 0.29:1, greater than or equal to about 0.3:1, greater than or equal to about 0.31:1, greater than or equal to about 0.33:1, greater than or equal to about 0.34:1, greater than or equal to about 0.35:1, greater than or equal to about 0.36:1, greater than or equal to about 0.37:1, greater than or equal to about 0.38:1, greater than or equal to about 0.4:1, greater than or equal to about 0.45:1, greater than or equal to about 0.48:1, greater than or equal to about 0.49:1, Greater than or equal to about 0.5:1, greater than or equal to about 0.51:1, greater than or equal to about 0.52:1, greater than or equal to about 0.53:1, greater than or equal to about 0.54:1, greater than or equal to about 0.55:1, greater than or equal to about 0.56:1, greater than or equal to about 0.57:1, greater than or equal to about 0.58:1, greater than or equal to about 0.59:1, greater than or equal to about 0.6:1, greater than or equal to about 0.63:1, greater than or equal to about 0.65:1, greater than or equal to about 0.67:1, greater than or equal to about 0.69:1, greater than or equal to about 0.7:1, or greater than or equal to about 0.72:1. In the semiconductor nanoparticles, the molar ratio of gallium to sulfur (Ga:S) may be less than or equal to about 1.2:1, less than or equal to about 1.1:1, less than or equal to about 1:1, less than or equal to about 0.95:1, less than or equal to about 0.9:1, less than or equal to about 0.85:1, less than or equal to about 0.8:1, less than or equal to about 0.79:1, less than or equal to about 0.75:1, less than or equal to about 0.77:1, less than or equal to about 0.7 3:1, less than or equal to about 0.71:1, less than or equal to about 0.7:1, less than or equal to about 0.69:1, less than or equal to about 0.68:1, less than or equal to about 0.65:1, less than or equal to about 0.64:1, less than or equal to about 0.61:1, less than or equal to about 0.6:1, less than or equal to about 0.56:1, less than or equal to about 0.54:1, less than or equal to about 0.52:1, or less than or equal to about 0.5:1.

[0119] In the semiconductor nanoparticles, the molar ratio of the sum of indium and gallium to sulfur [(In+Ga):S] may be greater than or equal to about 0.4:1, greater than or equal to about 0.45:1, greater than or equal to about 0.5:1, greater than or equal to about 0.52:1, greater than or equal to about 0.53:1, greater than or equal to about 0.54:1, greater than or equal to about 0.55:1, greater than or equal to about 0.57:1, greater than or equal to about 0.58:1, greater than or equal to about 0.59:1, greater than or equal to about 0.6:1, greater than or equal to about 0.61:1, greater than or equal to about 0.62:1, greater than or equal to about 0.63:1, greater than or equal to about 0.64:1, greater than or equal to about 0.65:1, greater than or equal to about 0.66:1, greater than or equal to about 0.68:1, greater than or equal to about 0.7:1, greater than or equal to about 0.7:1, or greater than or equal to about 0.8:1. or less than about 0.72:1, or less than or equal to about 0.73:1, or less than or equal to about 0.74:1, or less than or equal to about 0.75:1, or less than or equal to about 0.77:1, or less than or equal to about 0.79:1, or less than or equal to about 0.81:1 and less than or equal to about 1.5:1, or less than or equal to about 1.3:1, or less than or equal to about 1.1:1, or less than or equal to about 1.05:1, or less than or equal to about 1:1, or less than or equal to about 0.9:1, or less than or equal to about 0.88:1, or less than or equal to about 0.86:1, or less than or equal to about 0.84:1, or less than or equal to about 0.82:1, or less than or equal to about 0.78:1, or less than or equal to about 0.73:1, or less than or equal to about 0.71:1, or less than or equal to about 0.69:1, or less than or equal to about 0.67:1.

[0120] In the semiconductor nanoparticles, the molar ratio of silver to sulfur (Ag:S) may be greater than or equal to about 0.2:1, greater than or equal to about 0.25:1, greater than or equal to about 0.27:1, greater than or equal to about 0.28:1, greater than or equal to about 0.3:1, greater than or equal to about 0.31:1, greater than or equal to about 0.32:1, greater than or equal to about 0.33:1, greater than or equal to about 0.34:1, greater than or equal to about 0.35:1, greater than or equal to about 0.36:1, greater than or equal to about 0.38:1, greater than or equal to about 0.39:1, Greater than or equal to about 0.4:1 or greater than or equal to about 0.41:1 and less than or equal to about 0.65:1, less than or equal to about 0.6:1, less than or equal to about 0.5:1, less than or equal to about 0.45:1, less than or equal to about 0.44:1, less than or equal to about 0.43:1, less than or equal to about 0.42:1, less than or equal to about 0.41:1, less than or equal to about 0.4:1, less than or equal to about 0.39:1, less than or equal to about 0.37:1, less than or equal to about 0.36:1 or less than or equal to about 0.34:1.

[0121] In the semiconductor nanoparticles, the molar ratio of silver to the sum of silver, indium, and gallium [Ag:(Ag+In+Ga)] may be greater than or equal to about 0.15:1, greater than or equal to about 0.2:1, greater than or equal to about 0.25:1, greater than or equal to about 0.3:1, greater than or equal to about 0.31:1, greater than or equal to about 0.32:1, greater than or equal to about 0.33:1, greater than or equal to about 0.34:1, greater than or equal to about 0.35:1, greater than or equal to about 0.36:1, greater than or equal to about 0.01:1, or greater than or equal to about 0.02:1. .37:1, greater than or equal to about 0.38:1, greater than or equal to about 0.39:1, greater than or equal to about 0.4:1, greater than or equal to about 0.41:1, greater than or equal to about 0.43:1, or greater than or equal to about 0.44:1 and less than or equal to about 0.45:1, less than or equal to about 0.42:1, less than or equal to about 0.40:1, less than or equal to about 0.36:1, less than or equal to about 0.33:1, less than or equal to about 0.32:1, or less than or equal to about 0.28:1.

[0122] In the semiconductor nanoparticles, the molar ratio of gallium to the sum of gallium, indium, and silver (Ga:(Ga+In+Ag)) can be greater than or equal to about 0.25:1, greater than or equal to about 0.3:1, greater than or equal to about 0.31:1, greater than or equal to about 0.33:1, greater than or equal to about 0.35:1, greater than or equal to about 0.4:1, greater than or equal to about 0.45:1, greater than or equal to about 0.46:1, greater than or equal to about 0.47:1, greater than or equal to about 0.48:1, greater than or equal to about 0.49:1, greater than or equal to about 0.5:1, greater than or equal to about 0.51:1, greater than or equal to about 0.52:1, greater than or equal to about 0.53:1, or greater than or equal to about 0. .54:1 and less than or equal to about 0.85:1, less than or equal to about 0.8:1, less than or equal to about 0.77:1, less than or equal to about 0.74:1, less than or equal to about 0.73:1, less than or equal to about 0.72:1, less than or equal to about 0.71:1, less than or equal to about 0.69:1, less than or equal to about 0.65:1, less than or equal to about 0.64:1, less than or equal to about 0.62:1, less than or equal to about 0.61:1, less than or equal to about 0.59:1, less than or equal to about 0.56:1, less than or equal to about 0.54:1, less than or equal to about 0.53:1, less than or equal to about 0.49:1, or less than or equal to about 0.485:1.

[0123] In the semiconductor nanoparticles, the molar ratio of sulfur to the sum of silver, indium, and gallium [S:(Ag+In+Ga)] can be greater than or equal to about 0.6:1, greater than or equal to about 0.7:1, greater than or equal to about 0.75:1, greater than or equal to about 0.8:1, greater than or equal to about 0.9:1, greater than or equal to about 0.91:1, greater than or equal to about 0.92:1, greater than or equal to about 1:1, greater than or equal to about 1.05:1, greater than or equal to about 1.12:1, or greater than or equal to about 1:1. less than or equal to about 1.3:1 and less than or equal to about 1.5:1, less than or equal to about 1.45:1, less than or equal to about 1.35:1, less than or equal to about 1.15:1, less than or equal to about 1.13:1, less than or equal to about 1.12:1, less than or equal to about 1.1:1, less than or equal to about 1.09:1, less than or equal to about 1.08:1, less than or equal to about 1.06:1, less than or equal to about 0.99:1, or less than or equal to about 0.95:1.

[0124] The semiconductor nanoparticles have a charge balance value greater than or equal to about 0.95, greater than or equal to about 0.98, greater than or equal to about 1, greater than or equal to about 1.05, or greater than or equal to about 1.1 and less than or equal to about 1.35, less than or equal to about 1.3, less than or equal to about 1.25, less than or equal to about 1.2, or less than or equal to about 1.1, as defined by the following equation: Charge balance value = {[Ag] + 3([In] + [Ga])} / 2[S] where [Ag], [In], [Ga], and [S] are the molar numbers of silver, indium, gallium, and sulfur in the semiconductor nanoparticles, respectively.

[0125] The semiconductor nanoparticle, the first semiconductor nanocrystal, or the second semiconductor nanocrystal may further include selenium.

[0126] If present, the molar ratio of selenium to indium in the semiconductor nanoparticles can be greater than or equal to about 0.001, greater than or equal to about 0.003, greater than or equal to about 0.005, greater than or equal to about 0.007, greater than or equal to about 0.009, greater than or equal to about 0.01, greater than or equal to about 0.02, greater than or equal to about 0.025, greater than or equal to about 0.03, greater than or equal to about 0.035, greater than or equal to about 0.04, greater than or equal to about 0.045, greater than or equal to about 0.05, greater than or equal to about 0.055, greater than or equal to about 0.06, greater than or equal to about 0.07, greater than or equal to about 0.08, greater than or equal to about 0.09, greater than or equal to about 0.1, or greater than or equal to about 0.12. The molar ratio of selenium to indium in the semiconductor nanoparticles may be less than or equal to about 0.5, less than or equal to about 0.4, less than or equal to about 0.3, less than or equal to about 0.2, less than or equal to about 0.15, or less than or equal to about 0.12.

[0127] If present, the molar ratio of selenium to sulfur (Se:S) in the semiconductor nanoparticles can be greater than or equal to about 0.0001, greater than or equal to about 0.0003, greater than or equal to about 0.0005, greater than or equal to about 0.0007, greater than or equal to about 0.0009, greater than or equal to about 0.001, greater than or equal to about 0.002, greater than or equal to about 0.0025, greater than or equal to about 0.003, greater than or equal to about 0.0035, greater than or equal to about 0.004, greater than or equal to about 0.0045, greater than or equal to about 0.0050, greater than or equal to about 0.0051, greater than or equal to about 0.0052, greater than or equal to about 0.0053, greater than or equal to about 0.0054, greater than or equal to about 0.0056, greater than or equal to about 0.0057, greater than or equal to about 0.0058, greater than or equal to about 0.0059, greater than or equal to about 0.0100, greater than or equal to about 0.0110, greater than or equal to about 0.0125, greater than or equal to about 0.0130, greater than or equal to about 0.0141, greater than or equal to about 0.0157, greater than or equal to about 0.0160, greater than or equal to about 0.0171, greater than or equal to about 0.0180, greater than or equal to about 0.0191, greater than or equal to about 0.0192, greater than or equal to about 0.0193, greater than or equal to about 0.0194, greater than or equal to about 0.019 The molar ratio of selenium to sulfur (Se:S) in the semiconductor nanoparticles may be less than or equal to about 0.5, less than or equal to about 0.4, less than or equal to about 0.3, less than or equal to about 0.2, less than or equal to about 0.15, less than or equal to about 0.13, less than or equal to about 0.11, or less than or equal to about 0.06.

[0128] If present, the molar ratio of selenium to silver (Se:Ag) in the semiconductor nanoparticles may be greater than or equal to about 0.001, greater than or equal to about 0.003, greater than or equal to about 0.005, greater than or equal to about 0.007, greater than or equal to about 0.008, greater than or equal to about 0.009, greater than or equal to about 0.01, greater than or equal to about 0.012, greater than or equal to about 0.02, greater than or equal to about 0.03, greater than or equal to about 0.04, or greater than or equal to about 0.05. The molar ratio of selenium to silver (Se:Ag) in the semiconductor nanoparticles may be less than or equal to about 0.5, less than or equal to about 0.4, less than or equal to about 0.3, less than or equal to about 0.2, less than or equal to about 0.15, less than or equal to about 0.13, less than or equal to about 0.11, or less than or equal to about 0.06.

[0129] The size or average size (hereinafter referred to as size) of the first semiconductor nanocrystals may be greater than or equal to about 3 nm, greater than or equal to about 3.1 nm, greater than or equal to about 3.3 nm, greater than or equal to about 3.5 nm, greater than or equal to about 3.7 nm, greater than or equal to about 3.9 nm, greater than or equal to about 4 nm, greater than or equal to about 4.2 nm, greater than or equal to about 4.5 nm, greater than or equal to about 4.7 nm, greater than or equal to about 5 nm, greater than or equal to about 5.5 nm, or greater than or equal to about 6 nm. The size of the first semiconductor nanocrystals may be less than or equal to about 15 nm, less than or equal to about 13 nm, less than or equal to about 12 nm, less than or equal to about 11 nm, less than or equal to about 10 nm, less than or equal to about 8 nm, less than or equal to about 7 nm, less than or equal to about 6.5 nm, less than or equal to about 6.2 nm, less than or equal to about 5.5 nm, less than or equal to about 5 nm, less than or equal to about 4.5 nm, less than or equal to about 4 nm, or less than or equal to about 3.5 nm.

[0130] The thickness of the second semiconductor nanocrystal or the layer including the second semiconductor nanocrystal can be greater than or equal to about 0.1 nm, greater than or equal to about 0.2 nm, greater than or equal to about 0.3 nm, greater than or equal to about 0.5 nm, greater than or equal to about 0.7 nm, greater than or equal to about 0.9 nm, greater than or equal to about 1 nm, greater than or equal to about 1.2 nm, greater than or equal to about 1.5 nm, greater than or equal to about 1.8 nm, greater than or equal to about 2 nm, greater than or equal to about 2.3 nm, greater than or equal to about 2.5 nm, greater than or equal to about 2.8 nm, greater than or equal to about 3 nm, greater than or equal to about 3.2 nm, greater than or equal to about 3.5 nm, greater than or equal to about 3.8 nm, or greater than or equal to about 4 nm. The thickness of the second semiconductor nanocrystal or the layer including the second semiconductor nanocrystal can be less than or equal to about 10 nm, less than or equal to about 8 nm, less than or equal to about 6 nm, less than or equal to about 5 nm, less than or equal to about 4.5 nm, less than or equal to about 4.3 nm, less than or equal to about 4.1 nm, less than or equal to about 3.9 nm, less than or equal to about 3.3 nm, less than or equal to about 3 nm, less than or equal to about 2.5 nm, less than or equal to about 2 nm, less than or equal to about 1.5 nm, less than or equal to about 1 nm, or less than or equal to about 0.8 nm.

[0131] If present, the thickness of the third semiconductor nanocrystal, the fourth semiconductor nanocrystal, or the layer comprising them can be greater than or equal to about 0.1 nm, greater than or equal to about 0.3 nm, greater than or equal to about 0.5 nm, greater than or equal to about 0.7 nm, or greater than or equal to about 1 nm. The thickness of the third semiconductor nanocrystal, the fourth semiconductor nanocrystal, or the layer comprising them can be less than or equal to about 2 nm, less than or equal to about 1.5 nm, less than or equal to about 1 nm, or less than or equal to about 0.8 nm. The thickness of the third semiconductor nanocrystal, the fourth semiconductor nanocrystal, or the layer comprising them can be in the range of about 0.1 nm to about 5 nm, about 0.2 nm to about 4 nm, about 0.3 nm to about 3.5 nm, about 0.4 nm to about 3 nm, about 0.5 nm to about 2.5 nm, about 0.6 nm to about 2 nm, about 0.7 nm to about 1.5 nm, about 0.8 nm to about 1.2 nm, about 0.9 nm to about 1 nm, or a combination thereof.

[0132] In an embodiment, the size (or average particle size, hereinafter referred to as "size") of the semiconductor nanoparticles may be greater than or equal to about 3.5 nm, greater than or equal to about 4 nm, greater than or equal to about 4.5 nm, greater than or equal to about 5 nm, greater than or equal to about 5.5 nm, greater than or equal to about 6 nm, greater than or equal to about 6.5 nm, greater than or equal to about 7 nm, greater than or equal to about 7.5 nm, greater than or equal to about 8 nm, greater than or equal to about 8.5 nm, greater than or equal to about 9 nm, greater than or equal to about 9.5 nm, greater than or equal to about 10 nm, greater than or equal to about 10.5 nm, or greater than or equal to about 11 nm. The size of the semiconductor nanoparticles may be less than or equal to about 50 nm, less than or equal to about 48 nm, less than or equal to about 46 nm, less than or equal to about 44 nm, less than or equal to about 42 nm, less than or equal to about 40 nm, less than or equal to about 35 nm, less than or equal to about 30 nm, less than or equal to about 25 nm, less than or equal to about 20 nm, less than or equal to about 18 nm, less than or equal to about 16 nm, less than or equal to about 14 nm, less than or equal to about 12 nm, less than or equal to about 11 nm, less than or equal to about 10 nm, less than or equal to about 8 nm, less than or equal to about 7 nm, less than or equal to about 6 nm, or less than or equal to about 4 nm.

[0133] In this specification, the size of the semiconductor nanoparticles may be a particle size (e.g., an equivalent diameter). The size of the semiconductor nanoparticles can be obtained from an image confirmed by an electron microscope (e.g., a transmission electron microscope). The size of the semiconductor nanoparticles may be an equivalent diameter obtained by a calculation involving converting the two-dimensional area of the particles obtained from the electron microscope image into a circular shape. The particle size can be reproducibly and easily obtained from the microscope image using various image processing programs (e.g., ImageJ or an in-house program that can be created using a coding language). The particle size may be a value calculated from the composition and emission peak wavelength of the semiconductor nanoparticles (e.g., a nominal particle size).

[0134] The semiconductor nanoparticles may have an average size of about 5 nm or more, about 5.1 nm or more, or about 5.2 nm or more and about 10 nm or less, about 7 nm or less, about 6.5 nm or less, about 6 nm or less, or about 5.4 nm or less. The semiconductor nanoparticles may have a size distribution represented by a standard deviation of about 30%, about 28%, about 26%, about 25%, about 24%, about 22%, about 21%, about 20%, about 19%, about 18%, about 17%, about 16%, about 15%, about 14%, about 13%, about 12%, about 11%, or about 10% of the average size. The standard deviation may be about 5%, about 10%, or about 12%.

[0135] The semiconductor nanoparticles can be configured to emit red light. The peak emission wavelength of red light may be greater than or equal to about 596 nm, greater than or equal to about 597 nm, greater than or equal to about 599 nm, greater than or equal to about 600 nm, greater than or equal to about 601 nm, greater than or equal to about 602 nm, greater than or equal to about 603 nm, greater than or equal to about 604 nm, greater than or equal to about 605 nm, greater than or equal to about 606 nm, greater than or equal to about 607 nm, greater than or equal to about 608 nm, greater than or equal to about 609 nm, greater than or equal to about 610 nm, greater than or equal to about 615 nm, greater than or equal to about 620 nm, or greater than or equal to about 625 nm and less than or equal to about 650 nm, less than or equal to about 645 nm, less than or equal to about 640 nm, less than or equal to about 638 nm, less than or equal to about 635 nm, less than or equal to about 633 nm, less than or equal to about 630 nm, less than or equal to about 628 nm, or less than or equal to about 624 nm.

[0136] Semiconductor nanoparticles can exhibit increased quantum yield levels. The quantum yield can be an absolute quantum yield. The quantum yield can be greater than or equal to about 10%, greater than or equal to about 15%, greater than or equal to about 20%, greater than or equal to about 25%, greater than or equal to about 30%, greater than or equal to about 35%, greater than or equal to about 40%, greater than or equal to about 45%, greater than or equal to about 50%, greater than or equal to about 55%, greater than or equal to about 60%, greater than or equal to about 65%, greater than or equal to about 70%, greater than or equal to about 75%, greater than or equal to about 80%, greater than or equal to about 85%, greater than or equal to about 90%, or greater than or equal to about 95%. The quantum yield can be less than or equal to about 100%, less than or equal to about 99.5%, less than or equal to about 99%, less than or equal to about 98%, or less than or equal to about 97%.

[0137] The semiconductor nanoparticles or red light may have a full width at half maximum (FWHM) of about 5 nm or more, about 10 nm or more, about 15 nm or more, about 20 nm or more, about 25 nm or more, or about 30 nm or more. The FWHM may be about 55 nm or less, about 50 nm or less, about 49 nm or less, about 48 nm or less, about 47 nm or less, about 46 nm or less, about 45 nm or less, about 40 nm or less, about 38 nm or less, about 36 nm or less, about 35 nm or less, about 34 nm or less, about 33 nm or less, about 32 nm or less, about 31 nm or less, about 30 nm or less, about 29 nm or less, about 28 nm or less, about 27 nm or less, about 26 nm or less, or about 25 nm or less.

[0138] Red light may be band-edge emission. In embodiments, the semiconductor nanoparticles may primarily exhibit band-edge emission. In the photoluminescence spectrum of the semiconductor nanoparticles of embodiments, the relative band-edge emission intensity defined by the following equation may be greater than or equal to about 1.5, greater than or equal to about 2, greater than or equal to about 3, greater than or equal to about 4, greater than or equal to about 5, or greater than or equal to about 10: Relative band edge emission intensity = A1 / A2 A1: spectral intensity at peak emission wavelength A2: Maximum intensity within the tail emission range of +50nm or greater from the peak emission wavelength The semiconductor nanoparticles of the embodiments may exhibit enhanced absorption efficiency.

[0139] In an embodiment, the semiconductor nanoparticles may have a weight-based optical density (in L) of greater than or equal to about 0.8, greater than or equal to about 1, greater than or equal to about 1.2, greater than or equal to about 1.5, greater than or equal to about 1.8, greater than or equal to about 2, greater than or equal to about 2.1, greater than or equal to about 2.2, greater than or equal to about 2.3, or greater than or equal to about 2.4 in a UV-Vis absorption spectrum (e.g., at 450 nm). g -1 cm -1 In the UV-Vis absorption spectrum, the semiconductor nanoparticles may have a weight-based optical density (unit: L) of less than or equal to about 4, less than or equal to about 3.5, less than or equal to about 3, or less than or equal to about 2.8 (for example, at 450 nm). g -1 cm -1 In the UV-Vis absorption spectrum, the semiconductor nanoparticles may have a weight-based optical density (unit: L) of greater than or equal to about 1.3, greater than or equal to about 1.4, greater than or equal to about 1.6, greater than or equal to about 1.9, or greater than or equal to about 2 and less than or equal to about 3.5 (for example, at 450 nm). g -1 cm -1 ).

[0140] In the UV-Vis absorption spectrum, the semiconductor nanoparticles can have a ratio of absorption at 550 nm to absorption at 350 nm of greater than or equal to about 0.05:1, greater than or equal to about 0.08:1, greater than or equal to about 0.1:1, greater than or equal to about 0.12:1, greater than or equal to about 0.13:1, greater than or equal to about 0.14:1, greater than or equal to about 0.15:1, greater than or equal to about 0.18:1, greater than or equal to about 0.2:1, greater than or equal to about 0.23:1, greater than or equal to about 0.25:1, greater than or equal to about 0.3:1, greater than or equal to about 0.35:1, or greater than or equal to about 0.4:1. In the UV-Vis absorption spectrum, the semiconductor nanoparticles can have a ratio of absorption at 550 nm to absorption at 350 nm of less than or equal to about 0.8:1, less than or equal to about 0.5:1, less than or equal to about 0.45:1, less than or equal to about 0.4:1, less than or equal to about 0.35:1, less than or equal to about 0.3:1, less than or equal to about 0.28:1, or less than or equal to about 0.2:1.

[0141] The shape of the semiconductor nanoparticles is not particularly limited and may include, for example, spheres, polyhedrons, pyramids, multi-arm shapes, cubes, nanotubes, nanowires, nanofibers, nanosheets, or combinations thereof, but is not limited thereto.

[0142] The semiconductor nanoparticles may include organic ligands and / or organic solvents on their surfaces. In embodiments, the organic ligands and / or organic solvents may be bound to the surfaces of the semiconductor nanoparticles. The organic ligands and organic solvents are as described herein.

[0143] Semiconductor nanoparticles can be manufactured according to the methods described herein. In embodiments, the semiconductor nanoparticles manufactured can exhibit the atomic molar ratios described herein and can emit red light with increased absorption efficiency and a desired full width at half maximum (FWHM). The manufactured semiconductor nanoparticles can be used, for example, as a wavelength conversion material in a color conversion layer.

[0144] In an embodiment, a method of manufacturing semiconductor nanoparticles may include the following steps: preparing a first semiconductor nanocrystal including silver, indium and sulfur; and contacting (e.g., reacting) a second sulfur precursor, the first semiconductor nanocrystal and a gallium precursor in a second reaction medium including a second organic solvent (e.g., at a shell formation reaction temperature).

[0145] Details of the first semiconductor nanocrystal are as described herein.

[0146] In an embodiment, the step of preparing the first semiconductor nanocrystal may include: contacting (reacting) a silver precursor, a first sulfur precursor, and an indium precursor in a first reaction medium including a first organic solvent; and heating the first reaction medium to a nucleation reaction temperature, wherein the amount of the first sulfur precursor per mole of indium precursor is greater than or equal to about 2 moles, greater than or equal to about 2.1 moles, greater than or equal to about 2.2 moles, or greater than or equal to about 2.5 moles and less than or equal to about 20 moles. In this method, the first reaction medium may further include an organic ligand.

[0147] In the method of the embodiment, the amount of the first sulfur precursor per mole of indium precursor can be greater than or equal to about 2 moles, greater than or equal to about 2.5 moles, greater than or equal to about 2.6 moles, greater than or equal to about 2.7 moles, greater than or equal to about 2.8 moles, greater than or equal to about 2.9 moles, greater than or equal to about 3 moles, greater than or equal to about 3.2 moles, greater than or equal to about 3.4 moles, greater than or equal to about 3.6 moles, greater than or equal to about 3.8 moles, greater than or equal to about 4 moles, greater than or equal to about 4.2 moles, greater than or equal to about 4.3 moles, or greater than or equal to about 4.4 moles. In the method of an embodiment, the amount of the first sulfur precursor per mole of the indium precursor may be less than or equal to about 19 moles, less than or equal to about 16 moles, less than or equal to about 14 moles, less than or equal to about 12 moles, less than or equal to about 10 moles, less than or equal to about 8 moles, less than or equal to about 6 moles, less than or equal to about 5.5 moles, less than or equal to about 5.3 moles, less than or equal to about 5 moles, or less than or equal to about 4.5 moles. In this method, the amount of the first sulfur precursor per mole of the indium precursor may be greater than or equal to about 4 moles and less than or equal to about 8 moles.

[0148] In the method, the amount of the indium precursor per mole of the silver precursor may be greater than or equal to about 0.6 moles, greater than or equal to about 0.8 moles, greater than or equal to about 1 mole, greater than or equal to about 1.1 moles, greater than or equal to about 1.2 moles, greater than or equal to about 1.3 moles, greater than or equal to about 1.4 moles, or greater than or equal to about 1.5 moles. The amount of the indium precursor per mole of the silver precursor may be less than or equal to about 5 moles, less than or equal to about 4.5 moles, less than or equal to about 4 moles, less than or equal to about 3.5 moles, less than or equal to about 3 moles, less than or equal to about 2.5 moles, less than or equal to about 2 moles, less than or equal to about 1.9 moles, less than or equal to about 1.8 moles, less than or equal to about 1.7 moles, less than or equal to about 1.6 moles, less than or equal to about 1.55 moles, or less than or equal to about 1.5 moles.

[0149] The amount of the first sulfur precursor may be greater than or equal to about 2 moles, greater than or equal to about 2.5 moles, greater than or equal to about 3 moles, greater than or equal to about 3.6 moles, greater than or equal to about 4 moles, greater than or equal to about 4.5 moles, greater than or equal to about 5 moles, greater than or equal to about 5.6 moles, greater than or equal to about 6 moles, greater than or equal to about 6.3 moles, greater than or equal to about 6.5 moles, greater than or equal to about 6.6 moles, greater than or equal to about 6.7 moles, greater than or equal to about 7 moles, greater than or equal to about 7.1 moles, greater than or equal to about 7.14 moles, greater than or equal to about 7.2 moles, greater than or equal to about 7.3 moles, or greater than or equal to about 8 moles per mole of silver precursor. The amount of the first sulfur precursor may be less than or equal to about 15 moles, less than or equal to about 14 moles, less than or equal to about 12 moles, less than or equal to about 10 moles, less than or equal to about 8.5 moles, less than or equal to about 7.5 moles, less than or equal to about 7 moles, or less than or equal to about 6.5 moles per mole of silver precursor.

[0150] The nucleation reaction temperature may be greater than or equal to about 100° C., greater than or equal to about 150° C., greater than or equal to about 180° C., greater than or equal to about 200° C., greater than or equal to about 210° C., greater than or equal to about 215° C., greater than or equal to about 220° C., greater than or equal to about 225° C., greater than or equal to about 230° C., or greater than or equal to about 240° C. The nucleation reaction temperature may be less than or equal to about 300° C., less than or equal to about 280° C., less than or equal to about 260° C., less than or equal to about 240° C., less than or equal to about 230° C., less than or equal to about 220° C., less than or equal to about 210° C., or less than or equal to about 200° C.

[0151] The core formation reaction time may be appropriately selected taking into account the type of precursor and the reaction temperature. In an embodiment, the core formation reaction time may be greater than or equal to about 1 minute, greater than or equal to about 5 minutes, greater than or equal to about 10 minutes, greater than or equal to about 15 minutes, greater than or equal to about 20 minutes, greater than or equal to about 25 minutes, greater than or equal to about 30 minutes, greater than or equal to about 40 minutes, greater than or equal to about 50 minutes, greater than or equal to about 1 hour, or greater than or equal to about 2 hours. In an embodiment, the core formation reaction time may be greater than or equal to about 10 minutes and less than or equal to about 4 hours, or greater than or equal to about 30 minutes and less than or equal to about 3 hours.

[0152] The step of preparing the first semiconductor nanocrystal may include: dissolving a silver precursor and an indium precursor in a first organic solvent to prepare a first reaction medium; vacuum-treating the first reaction medium at a predetermined temperature (e.g., about 20° C. to about 100° C., about 30° C. to about 60° C., or room temperature); and adding a first sulfur precursor and an optional organic ligand to the vacuum-treated first reaction medium.

[0153] The step of preparing the first semiconductor nanocrystals may include maintaining a first reaction medium including a silver precursor, an indium precursor, a first sulfur precursor, and an optional selenium precursor at a temperature greater than or equal to about 30° C. and less than or equal to about 100° C., or greater than or equal to about 35° C. and less than or equal to about 60° C., for a predetermined time (e.g., greater than or equal to about 1 minute and less than or equal to about 100 minutes, greater than or equal to about 3 minutes and less than or equal to about 90 minutes, greater than or equal to about 5 minutes and less than or equal to about 75 minutes, or greater than or equal to about 10 minutes and less than or equal to about 50 minutes).

[0154] The first reaction medium may also include or may not include a gallium precursor, a copper precursor, a zinc precursor, a selenium precursor or a combination thereof. In the core formation of the embodiment, additional organic ligands may be added to the first reaction medium. The first semiconductor nanocrystal manufactured may be separated and optionally washed. Addition, separation and washing of organic ligands may be carried out by the method described herein.

[0155] In some embodiments, the method may include contacting (e.g., reacting) a second sulfur precursor, a first semiconductor nanocrystal, and a gallium precursor in a second reaction medium including a second organic solvent (e.g., at a shell-forming reaction temperature). The second reaction medium may be heated to a predetermined temperature or a shell-forming reaction temperature. The second semiconductor nanocrystal may be formed on the first semiconductor nanocrystal by the contacting or reaction.

[0156] In an embodiment, the gallium precursor may include a gallium halide (e.g., gallium chloride, gallium bromide, gallium iodide, gallium fluoride, etc.). The predetermined temperature or shell formation reaction temperature may be greater than or equal to about 120° C. and less than or equal to about 380° C. The predetermined temperature or shell formation reaction temperature may be greater than or equal to about 220° C. and less than or equal to about 280° C.

[0157] In an embodiment, the method may include adding a second sulfur precursor to a second reaction medium (e.g., comprising an organic solvent and optionally an organic ligand). The second reaction medium may be vacuum treated as described herein. In an embodiment, the method may include adding a gallium precursor to the second reaction medium. In an embodiment, the method may include adding a first semiconductor nanocrystal to the second reaction medium. The method of an embodiment may also or may not include adding a selenium precursor to the first reaction medium or the second reaction medium (e.g., comprising an organic solvent and optionally an organic ligand). The second reaction medium may also or may not include an indium precursor.

[0158] The method may include heating the second reaction medium (e.g., comprising a second sulfur precursor, a gallium precursor, the first semiconductor nanocrystal, or a combination thereof) to a predetermined temperature (e.g., the reaction temperature or lower). The method may also include adding a non-solvent or a non-solvent mixture to the final reaction solution (e.g., after heating) to promote precipitation of semiconductor nanoparticles (e.g., coordinated with organic ligands).

[0159] The method may further comprise adding a silver compound to the reaction medium.

[0160] There is no particular limitation on the manner in which the silver compound is added to the reaction medium (e.g., the order of addition or the form of addition). The silver compound can be added in a state dissolved in a suitable organic solvent (e.g., an organic solvent described herein, such as an amine solvent (e.g., oleylamine) or a phosphine solvent (e.g., trioctylphosphine)). The timing of adding the silver compound is not particularly limited and can be appropriately selected. The silver compound can be added to the reaction medium before or after the addition of the first semiconductor nanocrystals, the gallium precursor, the sulfur precursor, or a combination thereof. In an embodiment, the silver compound can be added to the reaction medium after pretreatment. The silver compound may be added to the reaction medium in an amount of greater than or equal to about 0.01 mol%, greater than or equal to about 0.03 mol%, greater than or equal to about 0.04 mol%, greater than or equal to about 0.05 mol%, greater than or equal to about 0.052 mol%, greater than or equal to about 0.07 mol%, greater than or equal to about 0.09 mol%, greater than or equal to about 0.1 mol%, or greater than or equal to about 0.2 mol% (e.g., greater than or equal to about 0.5 mol%) and less than or equal to about 50 mol% (e.g., less than or equal to about 25 mol%) relative to the gallium precursor.

[0161] The amount of the silver compound relative to the gallium precursor may be greater than or equal to about 0.01 mol, greater than or equal to about 0.02 mol, greater than or equal to about 0.03 mol, greater than or equal to about 0.04 mol, greater than or equal to about 0.045 mol, greater than or equal to about 0.05 mol, greater than or equal to about 0.052 mol, greater than or equal to about 0.06 mol, greater than or equal to about 0.07 mol, greater than or equal to about 0.09 mol, greater than or equal to about 0.1 mol, greater than or equal to about 0.3 mol, greater than or equal to about 0.5 mol, greater than or equal to about 0.6 mol, greater than or equal to about 0.7 mol, greater than or equal to about 0.8 mol, greater than or equal to about 0.9 mol, greater than or equal to about 0.10 mol, greater than or equal to about 0.11 mol, greater than or equal to about 0.12 mol, greater than or equal to about 0.13 mol, greater than or equal to about 0.14 mol, greater than or equal to about 0.16 mol, greater than or equal to about 0.17 mol, greater than or equal to about 0.18 mol, greater than or equal to about 0.19 mol, greater than or equal to about 0.20 mol, greater than or equal to about 0.21 mol, greater than or equal to about 0.22 mol, greater than or equal to about 0.23 mol, greater than or equal to about 0.24 mol, greater than or equal to about 0.26 mol, greater than or equal to about 0.27 mol, greater than or equal to about 0.28 mol, greater than or equal to about 0.29 mol, greater than or equal to about 0.31 Greater than or equal to about 0.7 mol%, greater than or equal to about 0.8 mol%, greater than or equal to about 0.9 mol%, greater than or equal to about 1 mol%, greater than or equal to about 2 mol%, greater than or equal to about 3 mol%, greater than or equal to about 4 mol%, greater than or equal to about 5 mol%, greater than or equal to about 6 mol%, greater than or equal to about 7 mol%, greater than or equal to about 8 mol%, greater than or equal to about 9 mol%, greater than or equal to about 10 mol%, greater than or equal to about 11 mol%, greater than or equal to about 12 mol%, greater than or equal to about 13 mol%, greater than or equal to about 14 mol%, or greater than or equal to about 15 mol%. The amount of the silver compound relative to the gallium precursor may be less than or equal to about 50 mol%, less than or equal to about 30 mol%, less than or equal to about 25 mol%, less than or equal to about 20 mol%, less than or equal to about 18 mol%, less than or equal to about 17 mol%, less than or equal to about 16 mol%, less than or equal to about 15 mol%, less than or equal to about 14 mol%, less than or equal to about 13 mol%, less than or equal to about 12 mol%, less than or equal to about 11 mol%, less than or equal to about 10 mol%, less than or equal to about 9 mol%, less than or equal to about 8 mol%, less than or equal to about 7 mol%, less than or equal to about 6 mol%, less than or equal to about 5 mol%, less than or equal to about 4 mol%, or less than or equal to about 3 mol%. The amount of the silver compound relative to the gallium precursor may be greater than or equal to about 1 mol% and less than or equal to about 12 mol%.

[0162] The silver compound may include silver carboxylate, silver acetylacetonate, silver halide, or a combination thereof.

[0163] In an embodiment, forming the semiconductor nanoparticles may include reacting a gallium precursor with a second sulfur precursor in the presence of a first semiconductor nanocrystal including a Group 13 element and a chalcogen element. The second reaction medium may be a reaction medium for a shell forming reaction.

[0164] Details of the semiconductor nanoparticles and the first semiconductor nanocrystals are as described herein.

[0165] The method may include pre-treating the second reaction medium.

[0166] In an embodiment, the method may include adding the first semiconductor nanocrystal and a gallium precursor, a second sulfur precursor, or both to a second reaction medium comprising an organic solvent (and optionally a second sulfur precursor). Prior to adding the first semiconductor nanocrystal or gallium precursor, the second reaction medium (e.g., comprising the second sulfur precursor) may be pretreated under vacuum at a predetermined temperature. The pretreatment temperature may be lower than the reaction temperature. For example, the pretreatment temperature may be greater than or equal to approximately 80°C, greater than or equal to approximately 100°C, or greater than or equal to approximately 120°C and less than or equal to approximately 200°C or less than or equal to approximately 180°C.

[0167] The manner of adding the first semiconductor nanocrystals, gallium precursor, and sulfur precursor (e.g., order of addition or form of addition) is not particularly limited. The first semiconductor nanocrystals can be dispersed in a suitable organic solvent and added to the second reaction medium, but is not limited thereto. The gallium precursor can be dispersed in a suitable organic solvent (e.g., toluene) and added to the second reaction medium, but is not limited thereto.

[0168] In an embodiment, the predetermined temperature may be greater than or equal to about 120°C, greater than or equal to about 180°C, greater than or equal to about 190°C, greater than or equal to about 200°C, greater than or equal to about 205°C, greater than or equal to about 210°C, greater than or equal to about 240°C, greater than or equal to about 245°C, greater than or equal to about 250°C, greater than or equal to about 255°C, greater than or equal to about 260°C, greater than or equal to about 265°C, greater than or equal to about 270°C, Greater than or equal to about 275°C, greater than or equal to about 280°C, greater than or equal to about 285°C, greater than or equal to about 290°C, greater than or equal to about 295°C, greater than or equal to about 300°C, greater than or equal to about 305°C, greater than or equal to about 310°C, greater than or equal to about 315°C, greater than or equal to about 320°C, greater than or equal to about 330°C, greater than or equal to about 335°C, greater than or equal to about 340°C, or greater than or equal to about 345°C. The predetermined temperature may be less than or equal to about 380°C, less than or equal to about 375°C, less than or equal to about 370°C, less than or equal to about 365°C, less than or equal to about 360°C, less than or equal to about 355°C, less than or equal to about 350°C, less than or equal to about 340°C, less than or equal to about 330°C, less than or equal to about 320°C, less than or equal to about 310°C, less than or equal to about 300°C, less than or equal to about 290°C, less than or equal to about 280°C, less than or equal to about 270°C, less than or equal to about 260°C, or less than or equal to about 250°C.

[0169] In an embodiment, the method may include heating a second reaction medium (optionally including a sulfur precursor) to a first temperature under vacuum or an inert atmosphere, and adding a first semiconductor nanocrystal, a gallium precursor, a sulfur precursor, or a combination thereof to the second reaction medium heated to the first temperature. In an embodiment, the method may include heating a reaction mixture including the first semiconductor nanocrystal, the gallium precursor, and the sulfur precursor to a second temperature (e.g., a reaction temperature).

[0170] The first temperature may be greater than or equal to about 120°C (e.g., greater than or equal to about 180°C, greater than or equal to about 190°C, or greater than or equal to about 200°C) and less than or equal to about 280°C (e.g., less than or equal to about 250°C). The second temperature may be greater than or equal to about 190°C or greater than or equal to about 240°C and less than or equal to about 380°C or less than or equal to about 280°C. The second temperature may be higher than the first temperature. The difference between the first and second temperatures may be greater than or equal to about 5°C, greater than or equal to about 10°C, greater than or equal to about 15°C, greater than or equal to about 20°C, greater than or equal to about 30°C, greater than or equal to about 40°C, greater than or equal to about 50°C, greater than or equal to about 60°C, greater than or equal to about 70°C, greater than or equal to about 80°C, greater than or equal to about 90°C, or greater than or equal to about 100°C. The difference between the first temperature and the second temperature may be less than or equal to about 200°C, less than or equal to about 190°C, less than or equal to about 180°C, less than or equal to about 170°C, less than or equal to about 160°C, less than or equal to about 150°C, less than or equal to about 140°C, less than or equal to about 130°C, less than or equal to about 120°C, less than or equal to about 110°C, less than or equal to about 100°C, less than or equal to about 90°C, less than or equal to about 80°C, less than or equal to about 70°C, less than or equal to about 60°C, less than or equal to about 50°C, less than or equal to about 40°C, less than or equal to about 30°C, or less than or equal to about 20°C.

[0171] The first temperature may be greater than or equal to about 120° C., greater than or equal to about 190° C., greater than or equal to about 200° C., greater than or equal to about 210° C., greater than or equal to about 220° C., greater than or equal to about 230° C., greater than or equal to about 240° C., or greater than or equal to about 250° C. The first temperature may be less than or equal to about 280° C., less than or equal to about 275° C., less than or equal to about 270° C., less than or equal to about 265° C., less than or equal to about 260° C., less than or equal to about 255° C., less than or equal to about 250° C., less than or equal to about 240° C., less than or equal to about 230° C., less than or equal to about 220° C., less than or equal to about 210° C., less than or equal to about 200° C., less than or equal to about 190° C., less than or equal to about 180° C., less than or equal to about 170° C., less than or equal to about 160° C., or less than or equal to about 150° C.

[0172] The second temperature (e.g., reaction temperature) may be greater than or equal to about 210°C, greater than or equal to about 220°C, greater than or equal to about 230°C, greater than or equal to about 240°C, greater than or equal to about 245°C, greater than or equal to about 250°C, greater than or equal to about 255°C, greater than or equal to about 260°C, greater than or equal to about 265°C, greater than or equal to about 270°C, greater than or equal to about 275°C, greater than or equal to about 280°C, greater than or equal to about 285°C, greater than or equal to about 290°C, greater than or equal to about 295°C, greater than or equal to about 300°C, greater than or equal to about 305°C, greater than or equal to about 310°C, greater than or equal to about 315°C, greater than or equal to about 320°C, greater than or equal to about 330°C, greater than or equal to about 335°C, greater than or equal to about 340°C, or greater than or equal to about 345°C. The second temperature may be less than or equal to about 380°C, less than or equal to about 375°C, less than or equal to about 370°C, less than or equal to about 365°C, less than or equal to about 360°C, less than or equal to about 355°C, less than or equal to about 350°C, less than or equal to about 340°C, less than or equal to about 330°C, less than or equal to about 320°C, less than or equal to about 310°C, less than or equal to about 300°C, less than or equal to about 290°C, less than or equal to about 280°C, less than or equal to about 270°C, less than or equal to about 260°C, or less than or equal to about 250°C.

[0173] The reaction time may be appropriately controlled in consideration of the precursor and the reaction temperature. The reaction time may be greater than or equal to about 30 minutes, greater than or equal to about 35 minutes, greater than or equal to about 40 minutes, greater than or equal to about 45 minutes, greater than or equal to about 50 minutes, greater than or equal to about 55 minutes, greater than or equal to about 60 minutes, greater than or equal to about 65 minutes, greater than or equal to about 70 minutes, greater than or equal to about 75 minutes, or greater than or equal to about 80 minutes.

[0174] In an embodiment, the method may further include the following steps: preparing an additional reaction medium comprising an organic solvent and an organic ligand; heating the additional reaction medium; and contacting (reacting) a zinc precursor, a gallium precursor, and a sulfur precursor in the additional reaction medium, for example, at a reaction temperature in the presence of first semiconductor nanocrystals comprising indium, gallium, silver, and sulfur or particles comprising these (e.g., formed semiconductor nanoparticles), to further form a third semiconductor nanocrystal on the formed semiconductor nanoparticles. The third semiconductor nanocrystal may comprise zinc gallium sulfide (ZnGaS). Details regarding the third semiconductor nanocrystal are the same as those described herein.

[0175] The method may further include the steps of: preparing an additional reaction medium containing an organic ligand in an organic solvent; heating the additional reaction medium; and contacting (e.g., reacting) a zinc precursor and a chalcogen precursor (e.g., a sulfur precursor) in the presence of the formed semiconductor nanoparticles, for example, at a reaction temperature to provide a fourth semiconductor nanocrystal or an outer layer containing zinc chalcogenide on the surface of the semiconductor nanoparticles. Details regarding the fourth semiconductor nanocrystal are the same as those described herein.

[0176] In an embodiment, the reaction temperature for forming the third semiconductor nanocrystal or the fourth semiconductor nanocrystal may be greater than or equal to about 120° C., greater than or equal to about 130° C., greater than or equal to about 150° C., greater than or equal to about 180° C., greater than or equal to about 200° C., greater than or equal to about 205° C., or greater than or equal to about 208° C. and less than or equal to about 240° C., less than or equal to about 230° C., less than or equal to about 225° C., or less than or equal to about 215° C. The reaction time for forming the third semiconductor nanocrystal or the fourth semiconductor nanocrystal may be greater than or equal to about 10 minutes, greater than or equal to about 30 minutes, greater than or equal to about 40 minutes, greater than or equal to about 1 hour, greater than or equal to about 80 minutes, or greater than or equal to about 90 minutes and less than or equal to about 5 hours, less than or equal to about 4 hours, less than or equal to about 3 hours, less than or equal to about 2 hours, less than or equal to about 90 minutes, or less than or equal to about 70 minutes.

[0177] In this method, the manner of adding the precursor to the (eg, heated) reaction medium may include injection addition (eg, syringe addition), dropwise addition, or a combination thereof.

[0178] The type of silver precursor is not particularly limited and can be appropriately selected. The silver precursor may include silver powder, an alkylated silver compound, silver alcoholate, silver carboxylate, silver acetylacetonate, silver nitrate, silver sulfate, silver halide, silver cyanide, silver hydroxide, silver oxide, silver peroxide, silver carbonate, or a combination thereof. The silver precursor may include silver nitrate, silver acetate, silver acetylacetonate, or a combination thereof.

[0179] The type of indium precursor is not particularly limited and can be appropriately selected. The indium precursor may include indium powder, an alkylated indium compound, an indium alkoxide, an indium carboxylate, an indium nitrate, an indium perchlorate, an indium sulfate, an indium acetylacetonate, an indium halide, an indium cyanide, an indium hydroxide, an indium oxide, an indium peroxide, an indium carbonate, or a combination thereof. The indium precursor may include an indium carboxylate (such as indium oleate, indium myristate, and indium acetate), an indium hydroxide, an indium chloride, an indium bromide, an indium iodide, or a combination thereof.

[0180] The type of sulfur precursor is not particularly limited and can be appropriately selected. The sulfur precursor can be an organic solvent dispersion or a reaction product of sulfur and an organic solvent (e.g., octadecene sulfide (S-ODE), trioctylphosphine-sulfide (S-TOP), tributylphosphine-sulfide (S-TBP), triphenylphosphine-sulfide (S-TPP), trioctylamine-sulfide (S-TOA)), trimethylsilylalkylsulfide, trimethylsilylsulfide, mercaptopropylsilane, ammonium sulfide, sodium sulfide, C1-C30 mercaptan, compounds (e.g., α-toluenethiol, octanethiol, dodecanethiol, octadecenethiol, etc.), isothiocyanate compounds (e.g., cyclohexyl isothiocyanate, etc.), alkylene trithiocarbonates (e.g., ethylene trithiocarbonate, etc.), allyl mercaptan, thiourea compounds (e.g., dialkylthiourea having a C1 to C40 alkyl group, such as dimethylthiourea, diethylthiourea, ethylmethylthiourea, dipropylthiourea, etc.), thioacetamide compounds, or combinations thereof.

[0181] The selenium precursor, if present, may include selenium-trioctylphosphine (Se-TOP), selenium-tributylphosphine (Se-TBP), selenium-triphenylphosphine (Se-TPP), or combinations thereof.

[0182] The type of zinc precursor is not particularly limited and can be appropriately selected. In an embodiment, the zinc precursor can include Zn metal powder, alkylated Zn compound, Zn alcohol, Zn carboxylic acid, Zn nitrate, Zn perchlorate, Zn sulfuric acid, Zn acetylacetonate, Zn halogenide, Zn cyanide, Zn hydroxide, Zn oxide, Zn peroxide or a combination thereof. The zinc precursor can be dimethyl zinc, diethyl zinc, zinc acetate, zinc acetylacetonate, zinc iodide, zinc bromide, zinc chloride, zinc fluoride, zinc carbonate, zinc cyanide, zinc nitrate, zinc oxide, zinc peroxide, zinc perchlorate, zinc sulfate or a combination thereof. In an embodiment, when forming a semiconductor nanocrystal layer comprising zinc and sulfur, the zinc precursor can include Zn halogenide, but is not limited thereto.

[0183] For example, the type of gallium precursor for preparing the first semiconductor nanocrystal or additional semiconductor nanocrystal is not particularly limited and can be appropriately selected. The gallium precursor can include gallium powder, alkylated gallium compounds, gallium alkoxide, gallium carboxylate, gallium nitrate, gallium perchlorate, gallium sulfate, gallium acetylacetonate, gallium halide, gallium cyanide, gallium hydroxide, gallium oxide, gallium peroxide, gallium carbonate or a combination thereof. The gallium precursor can include gallium chloride, gallium iodide, gallium bromide, gallium acetate, gallium acetylacetonate, gallium oleate, gallium palmitate, gallium stearate, gallium myristate, gallium hydroxide or a combination thereof.

[0184] The organic ligand may include RCOOH, RNH2, R2NH, R3N, RSH, RH2PO, R2HPO, R3PO, RH2P, R2HP, R3P, ROH, RCOOR', RPO(OH)2, RHPOOH, R2POOH (wherein R and R' are independently substituted or unsubstituted C1 to C40 (or C3 to C24) aliphatic hydrocarbon groups (e.g., alkyl, alkenyl, or alkynyl) or substituted or unsubstituted C6 to C40 (or C6 to C24) aromatic hydrocarbon groups (e.g., C6 to C20 aryl)), or a combination thereof. The organic ligand may be bound to the surface of the semiconductor nanoparticle. Examples of the organic ligand may include: methyl mercaptan, ethyl mercaptan, propyl mercaptan, butyl mercaptan, pentyl mercaptan, hexyl mercaptan, heptyl mercaptan, octyl mercaptan, 1-nonyl mercaptan, decyl mercaptan, dodecanethiol, hexyl mercaptan, octyl mercaptan, benzyl mercaptan; methylamine, ethylamine, propylamine, butylamine, pentylamine, hexylamine, octylamine, dodecylamine, hexadecylamine, octadecylamine, dimethylamine, diethylamine, dipropylamine; formic acid, acetic acid, propionic acid, butyric acid, pentyl acid, hexyl acid, heptyl acid, octyl acid, dodecyl acid, hexadecyl acid, octadecyl acid, oleic acid, benzoic acid; substituted or unsubstituted methylphosphine (e.g., trimethylphosphine, methyldiphenylphosphine, etc.), substituted or unsubstituted ethylphosphine (e.g., triethylphosphine, ethyldiphenylphosphine, etc.), substituted or unsubstituted propylphosphine, substituted or unsubstituted butylphosphine, substituted or unsubstituted pentylphosphine, Substituted or unsubstituted octylphosphine (e.g., trioctylphosphine (TOP)); phosphine oxides such as substituted or unsubstituted methylphosphine oxide (e.g., trimethylphosphine oxide, methyldiphenylphosphine oxide), substituted or unsubstituted ethylphosphine oxide (e.g., triethylphosphine oxide, ethyldiphenylphosphine oxide), substituted or unsubstituted propylphosphine oxide, substituted or unsubstituted butylphosphine oxide, substituted or unsubstituted octylphosphine oxide (e.g., trioctylphosphine oxide (TOPO)); diphenylphosphine, triphenylphosphine, or oxide compounds thereof; phosphoric acid; C5 to C20 alkylphosphonic acid; C5 to C20 alkylphosphinic acid such as hexylphosphinic acid, octylphosphinic acid, dodecaphosphinic acid, tetradecaphosphinic acid, hexadecaphosphinic acid, octadecphosphinic acid, etc., but the embodiment is not limited thereto. The organic ligand may be used alone or as a mixture of two or more.

[0185] The organic solvent may include: an amine solvent (e.g., a C1-C50 aliphatic amine); a nitrogen-containing heterocyclic compound (such as pyridine); a C6 to C40 aliphatic hydrocarbon (e.g., an alkane, an alkene, an alkyne, etc.), such as hexadecane, octadecane, octadecene, squalene, etc.; a C6 to C30 aromatic hydrocarbon, such as phenyldodecane, phenyltetradecane, phenylhexadecane, etc.; a phosphine substituted with a C6 to C22 alkyl group, such as trioctylphosphine, etc.; a phosphine oxide substituted with a C6 to C22 alkyl group, such as trioctylphosphine oxide, etc.; a C12 to C22 aromatic ether, such as phenyl ether, benzyl ether, etc.; or a combination thereof. The amine solvent may be a compound having one or more (e.g., two or three) C1-C50, C2-C45, C3-C40, C4-C35, C5-C30, C6-C25, C7-C20, C8-C15, or C6-C22 aliphatic hydrocarbon groups (e.g., alkyl, alkenyl, or alkynyl groups). In an embodiment, the amine solvent may be: a C6-C22 primary amine, such as hexadecylamine, oleylamine, etc.; a C6-C22 secondary amine, such as dioctylamine, etc.; a C6-C22 tertiary amine, such as trioctylamine, etc.; or a combination thereof.

[0186] The amount of the organic ligand and each precursor in the reaction medium can be appropriately selected, taking into account the type of solvent, the type of organic ligand and each precursor, the desired particle size and composition, etc. The molar ratio between the precursors can be appropriately selected, taking into account the desired molar ratio in the final nanoparticles, the reactivity between the precursors, etc. The manner in which each precursor is added is not particularly limited. The addition of each precursor can be carried out simultaneously or sequentially. The reaction can be carried out in an inert gas atmosphere, in air, or in a vacuum, but is not limited thereto.

[0187] After the reaction, an organic ligand (e.g., an alkylphosphine compound such as trioctylphosphine) can be added to the reaction medium. When a non-solvent is added to the final reaction medium (e.g., nanoparticles coordinated with the organic ligand) after the reaction, the nanoparticles can be isolated (e.g., precipitated). The non-solvent can be a polar solvent that is miscible with the solvent used in the reaction but cannot disperse the nanocrystals. The non-solvent can be determined based on the solvent used in the reaction and may include, for example, acetone, ethanol, butanol, isopropanol, ethylene glycol, water, tetrahydrofuran (THF), dimethyl sulfoxide (DMSO), diethyl ether, formaldehyde, acetaldehyde, solvents with solubility parameters similar to those of the aforementioned solvents, or combinations thereof. Separation can be performed using centrifugation, precipitation, chromatography, or distillation. The isolated nanocrystals can be washed with a washing solvent, if desired. The washing solvent is not particularly limited and can be a solvent with a solubility parameter similar to that of the organic solvent or ligand. Examples of non-solvents or wash solvents include, but are not limited to, alcohols; alkane solvents such as hexane, heptane, and octane; chloroform; aromatic solvents such as toluene and benzene; or combinations thereof. The non-solvent may be a mixture of an aliphatic hydrocarbon solvent (such as hexane) and an alcohol solvent (such as ethanol).

[0188] The produced semiconductor nanoparticles can be dispersed in a dispersing solvent. The produced semiconductor nanoparticles can form an organic solvent dispersion. The organic solvent dispersion may or may not include water and / or a water-miscible organic solvent. The dispersing solvent can be appropriately selected. The dispersing solvent may include the aforementioned organic solvents. The dispersing solvent may include substituted or unsubstituted C1 to C40 aliphatic hydrocarbons, substituted or unsubstituted C6 to C40 aromatic hydrocarbons, or combinations thereof.

[0189] In embodiments, a composite may include: a matrix; and semiconductor nanoparticles described herein, wherein the semiconductor nanoparticles may be dispersed in the matrix. The composite may further include metal oxide nanoparticles. The composite or the semiconductor nanoparticles may be configured to emit red light. In embodiments, the composite may be in the form of a patterned film. The composite may further include semiconductor nanoparticles configured to emit a second light different from red light. In embodiments, the composite may be in the form of a sheet. The sheet may further include semiconductor nanoparticles (e.g., additional semiconductor nanoparticles) configured to emit a second light different from red light (e.g., green light).

[0190] The semiconductor nanoparticles or composites including the semiconductor nanoparticles described herein can exhibit an increased level of blue light absorbance (e.g., improved incident light absorbance) and / or improved optical properties (e.g., increased luminous efficiency and narrower full width at half maximum), and can emit light of a desired wavelength (e.g., first light or red light).

[0191] The composite can include a semiconductor nanoparticle or a population of semiconductor nanoparticles (e.g., in a predetermined amount) and exhibit increased absorbance. The composite can have an absorbance of incident light of greater than or equal to about 70%, greater than or equal to about 73%, greater than or equal to about 75%, greater than or equal to about 77%, greater than or equal to about 80%, greater than or equal to about 83%, greater than or equal to about 85%, greater than or equal to about 87%, greater than or equal to about 90%, greater than or equal to about 93%, greater than or equal to about 94%, greater than or equal to about 95%, greater than or equal to about 96%, greater than or equal to about 97%, greater than or equal to about 98%, or greater than or equal to about 99%. The composite can have an absorbance of blue light of about 70% to about 100%, about 80% to about 98%, about 95% to about 99%, about 96% to about 98%, or combinations thereof.

[0192] The incident light absorbance of the complex can be calculated according to Equation 1: Equation 1 Incident light absorbance = [(B-B') / B] × 100% Where, in Equation 1, B is the amount of incident light provided to the composite, and B' is the amount of incident light that passes through the composite.

[0193] The composite may have a light conversion efficiency (CE) (e.g., external quantum efficiency or internal quantum efficiency) of greater than or equal to about 50%, greater than or equal to about 55%, greater than or equal to about 60%, greater than or equal to about 65%, greater than or equal to about 70%, or greater than or equal to about 75%. Equation 2 Internal quantum efficiency (%) = [A / (B-B')] × 100 Equation 3 External quantum efficiency (%) = [A / B] × 100 in: A: Amount of first light emitted from the composite B: The amount of incident light B': The amount of incident light that passes through the composite.

[0194] In an embodiment, the composite may be prepared from an ink composition. The ink composition may include: a liquid carrier; and a plurality of semiconductor nanoparticles of an embodiment. The semiconductor nanoparticles may be dispersed in the liquid carrier.

[0195] The liquid carrier may include a liquid monomer, an organic solvent, or a combination thereof. The ink composition may also include, for example, metal oxide nanoparticle(s) dispersed in the liquid carrier. The ink composition may also include a dispersant (for dispersing the nanoparticles and / or metal oxide nanoparticles). The dispersant may include an organic compound (monomer or polymer) containing a carboxylic acid group. The liquid carrier may not include (e.g., a volatile) organic solvent. The ink composition may be a solvent-free system.

[0196] The liquid monomer may comprise a (photo)polymerizable monomer comprising a carbon-carbon double bond. The composition may optionally further comprise a (thermal or photo)initiator. Polymerization of the composition may be initiated by light or heat.

[0197] The details of the semiconductor nanoparticles in the composition (or composite) are as described herein. The amount of semiconductor nanoparticles in the composition (or composite) can be appropriately adjusted taking into account the desired end use (e.g., color filter, etc.). In an embodiment, the amount of semiconductor nanoparticles in the composition (or composite) can be greater than or equal to about 1 weight percent (wt%) based on the solid content of the composition or composite (hereinafter, the solid content can be the solid content of the composition or the solid content of the composite), for example, greater than or equal to about 2 wt%, greater than or equal to about 3 wt%, greater than or equal to about 4 wt%, greater than or equal to about 5 wt%, greater than or equal to about 6 wt%, greater than or equal to about 7 wt%, greater than or equal to about 8 wt%, greater than or equal to about 9 wt%, greater than or equal to about 10 wt%, greater than or equal to about 15 wt%, greater than or equal to about 20 wt%, greater than or equal to about 25 wt%, greater than or equal to about 30 wt%, greater than or equal to about 35 wt%, or greater than or equal to about 40 wt%. Based on the solid content of the composition or composite, the amount of semiconductor nanoparticles can be less than or equal to about 70 wt %, for example, less than or equal to about 65 wt %, less than or equal to about 60 wt %, less than or equal to about 55 wt %, or less than or equal to about 50 wt %. The weight percentage of a given component relative to the total solid content of the composition can represent the amount of a given component in the composite described herein.

[0198] In embodiments, the ink composition may be a photoresist composition containing semiconductor nanoparticles suitable for photolithography. In embodiments, the ink composition may be a composition containing semiconductor nanoparticles capable of providing a pattern using a printing method (e.g., a droplet discharge method such as inkjet printing). Compositions according to embodiments may not include a conjugated (or conductive) polymer (except for the cardo binder described herein). Compositions according to embodiments may include a conjugated polymer. Here, a conjugated polymer refers to a polymer having conjugated double bonds in the main chain (e.g., polyphenylene vinylene, etc.).

[0199] In compositions according to embodiments, a dispersant can ensure the dispersibility of semiconductor nanoparticles. In embodiments, the dispersant can be a binder (or a binder polymer). The binder can include carboxylic acid groups (e.g., in a repeating unit). The binder can be an insulating polymer. The binder can be a compound (monomer or polymer) containing carboxylic acid groups.

[0200] In the composition (or composite), the amount of the dispersant can be greater than or equal to about 0.5 wt %, for example, greater than or equal to about 1 wt %, greater than or equal to about 5 wt %, greater than or equal to about 10 wt %, greater than or equal to about 15 wt %, or greater than or equal to about 20 wt %, based on the total solids content of the composition (or composite). The amount of the dispersant can be less than or equal to about 55 wt %, less than or equal to about 35 wt %, less than or equal to about 33 wt %, or less than or equal to about 30 wt %, based on the total solids content of the composition (or composite).

[0201] In the composition (or liquid vehicle), a liquid monomer or a polymerizable (e.g., photopolymerizable) monomer (hereinafter, referred to as a monomer) including a carbon-carbon double bond may include a (e.g., photopolymerizable) (meth)acryloyl group-containing monomer. The monomer may be a precursor for an insulating polymer.

[0202] The amount of the (photopolymerizable) monomer may be greater than or equal to about 0.5 wt %, for example, greater than or equal to about 1 wt %, greater than or equal to about 2 wt %, greater than or equal to about 3 wt %, greater than or equal to about 5 wt %, or greater than or equal to about 10 wt %, based on the total weight or total solids content of the composition. The amount of the (photopolymerizable) monomer may be less than or equal to about 30 wt %, for example, less than or equal to about 28 wt %, less than or equal to about 25 wt %, less than or equal to about 23 wt %, less than or equal to about 20 wt %, less than or equal to about 18 wt %, less than or equal to about 17 wt %, less than or equal to about 16 wt %, or less than or equal to about 15 wt %, based on the total weight or total solids content of the composition.

[0203] The (photo)initiator included in the composition can be used for (photo)polymerization of the aforementioned monomers. An initiator is a compound that accelerates a free radical reaction (e.g., free radical polymerization of a monomer) by generating free radical chemicals under mild conditions (e.g., heat or light). The initiator can be a thermal initiator or a photoinitiator. The initiator is not particularly limited and can be selected appropriately.

[0204] In the composition, the amount of the initiator may be appropriately adjusted in consideration of the type and amount of the polymerizable monomer. In an embodiment, the amount of the initiator may be greater than or equal to about 0.01 wt % (e.g., greater than or equal to about 1 wt %) and less than or equal to about 10 wt % (e.g., less than or equal to about 9 wt %, less than or equal to about 8 wt %, less than or equal to about 7 wt %, less than or equal to about 6 wt %, or less than or equal to about 5 wt %) based on the total weight of the composition (or the total weight of the solid content), but is not limited thereto.

[0205] The composition (or composite) may further include a (multifunctional or monofunctional) thiol compound having at least one thiol group at a terminal end (or a moiety derived therefrom, such as a moiety produced by a reaction between a thiol and a carbon-carbon double bond, for example, a sulfide group), fine metal oxide particles (e.g., metal oxide nanoparticles), or a combination thereof.

[0206] The metal oxide fine particles may include TiO2, SiO2, BaTiO3, Ba2TiO4, ZnO, or a combination thereof. In the composition (or composite), the amount of the metal oxide fine particles may be greater than or equal to about 1 wt%, greater than or equal to about 2 wt%, greater than or equal to about 3 wt%, greater than or equal to about 5 wt%, or greater than or equal to about 10 wt% and less than or equal to about 50 wt%, less than or equal to about 40 wt%, less than or equal to about 30 wt%, less than or equal to about 25 wt%, less than or equal to about 20 wt%, less than or equal to about 15 wt%, less than or equal to about 10 wt%, less than or equal to about 7 wt%, less than or equal to about 5 wt%, or less than or equal to about 3 wt%, based on the total solid content.

[0207] The diameter of the metal oxide fine particles is not particularly limited and can be appropriately selected. The diameter of the metal oxide fine particles can be greater than or equal to about 100 nm (e.g., greater than or equal to about 150 nm or greater than or equal to about 200 nm) and less than or equal to about 1000 nm or less than or equal to about 800 nm.

[0208] The polythiol compound can be a dithiol compound, a trithiol compound, a tetrathiol compound, or a combination thereof. For example, the thiol compound can be ethylene glycol bis(3-mercaptopropionate), ethylene glycol dimercaptoacetate, trimethylolpropane tris(3-mercaptopropionate), pentaerythritol tetrakis(3-mercaptopropionate), pentaerythritol tetrakis(2-mercaptoacetate), 1,6-hexanedithiol, 1,3-propanedithiol, 1,2-ethanedithiol, polyethylene glycol dithiol comprising 1 to 10 ethylene glycol repeating units, or a combination thereof.

[0209] Based on the total solids content of the composition (or composite), the amount of the thiol compound (or moiety derived therefrom) can be less than or equal to about 50 wt %, less than or equal to about 40 wt %, less than or equal to about 30 wt %, less than or equal to about 20 wt %, less than or equal to about 10 wt %, less than or equal to about 9 wt %, less than or equal to about 8 wt %, less than or equal to about 7 wt %, less than or equal to about 6 wt %, or less than or equal to about 5 wt %. Based on the total solids content of the composition (or composite), the amount of the thiol compound can be greater than or equal to about 0.1 wt %, for example, greater than or equal to about 0.5 wt %, greater than or equal to about 1 wt %, greater than or equal to about 5 wt %, greater than or equal to about 10 wt %, greater than or equal to about 15 wt %, greater than or equal to about 18 wt %, or greater than or equal to about 20 wt %.

[0210] The composition or liquid carrier may include an organic solvent. In some embodiments, the composition or liquid carrier may not include an organic solvent. If present, the type of organic solvent that can be used is not particularly limited. The type and amount of the organic solvent are appropriately determined taking into account the types and amounts of the aforementioned primary components (i.e., nanoparticles, dispersant, polymerizable monomer, initiator, thiol compound, etc., if present) and other additives described herein. In addition to the desired amount of (non-volatile) solids, the composition may include a residual amount of solvent. In an embodiment, examples of the organic solvent may be: glycol solvents such as ethylene glycol, diethylene glycol, polyethylene glycol, etc.; glycol ether solvents such as ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, diethylene glycol monomethyl ether, ethylene glycol diethyl ether, diethylene glycol dimethyl ether, etc.; glycol ether acetate solvents such as ethylene glycol acetate, ethylene glycol monoethyl ether acetate, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, etc.; propylene glycol solvents such as propylene glycol, etc.; propylene glycol ether solvents such as propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, propylene glycol dimethyl ether, dipropylene glycol dimethyl ether, propylene glycol diethyl ether, dipropylene glycol diethyl ether, etc.; propylene glycol ether acetate solvents such as propylene glycol monomethyl ether acetate, dipropylene glycol monoethyl ether acetate, etc.; amide solvents , such as N-methylpyrrolidone, dimethylformamide, dimethylacetamide, etc.; ketone solvents, such as methyl ethyl ketone (MEK), methyl isobutyl ketone (MIBK), cyclohexanone, etc.; petroleum solvents, such as toluene, xylene, solvent naphtha, etc.; ester solvents, such as ethyl acetate, butyl acetate, ethyl lactate, 3-ethoxyethyl propionate, etc.; ether solvents, such as diethyl ether, dipropyl ether, dibutyl ether, etc.; chloroform, C1 to C40 aliphatic hydrocarbon solvents (e.g., alkanes, alkenes or alkynes), halogen (e.g., chlorine) substituted C1 to C40 aliphatic hydrocarbon solvents (e.g., dichloroethane, chloroform, etc.), C6 to C40 aromatic hydrocarbon solvents (e.g., toluene, xylene, etc.), halogen (e.g., chlorine) substituted C6 to C40 aromatic hydrocarbon solvents; or combinations thereof.

[0211] In addition to the aforementioned components, the compositions (or composites) of the embodiments may further include additives such as light diffusers, leveling agents, coupling agents, or combinations thereof. The components (binder, monomer, solvent, additive, thiol compound, cardo binder, etc.) included in the compositions of the embodiments may be appropriately selected. For details, reference may be made, for example, to US-2017-0052444-A1, the entire contents of which are incorporated herein.

[0212] In the preparation of the composition according to the embodiment, each of the above components may be sequentially manufactured or mixed simultaneously, and the order thereof is not particularly limited.

[0213] The composition can provide a color conversion layer (or a patterned film of the composite) by (eg, free radical) polymerization. The color conversion layer (or a patterned film of the composite) can be prepared using a photoresist composition. Figure 1A The method may include the following steps: forming a film of the aforementioned composition on a substrate (S1); pre-baking the film according to selection (S2); exposing selected areas of the film to light (e.g., having a wavelength of less than or equal to about 400 nm) (S3); and developing the exposed film with an alkaline developing solution to obtain a pattern of quantum dot-polymer composites (also referred to as "nanoparticle-polymer composites", "semiconductor nanoparticle composites" or "complexes") (S4).

[0214] Reference Figure 1A The composition may be applied to a substrate to a predetermined thickness using a suitable method such as spin coating or slit coating to form a film. The formed film may optionally be subjected to a pre-baking (PRB) step. Pre-baking can be performed by selecting appropriate conditions from known conditions such as temperature, time, and atmosphere.

[0215] Under a mask with a predetermined pattern, the formed (or optionally pre-baked) film is exposed to light with a predetermined wavelength (EXP). The wavelength and intensity of the light can be selected taking into account the type and amount of photoinitiator, the type and amount of quantum dots, etc.

[0216] The exposed film may then be treated with an alkaline developing solution (e.g., by dipping or spraying) to dissolve the unexposed areas and obtain the desired pattern (DEV). Optionally, the obtained pattern may be post-exposed baked (POB) at a temperature of, for example, about 150° C. to about 230° C. for a predetermined time (e.g., about 10 minutes or more or about 20 minutes or more) (S5) to improve the crack resistance and solvent resistance of the pattern.

[0217] When a color conversion layer or patterned film of a semiconductor nanoparticle composite has multiple repeating subregions (i.e., color conversion regions), each repeating subregion can be formed (S6) by preparing multiple compositions including quantum dots (e.g., red-emitting quantum dots, green-emitting quantum dots, or optionally blue-emitting quantum dots) having desired luminescent properties (photoluminescence peak wavelength, etc.); and repeating the aforementioned patterning process multiple times (e.g., two or more times or three or more times) for each composition as needed, thereby obtaining a nanoparticle-polymer composite having the desired pattern. For example, the nanoparticle-polymer composite can have a pattern of at least two repeating color subregions (e.g., RGB color subregions). This pattern of nanoparticle-polymer composites can be used as a photoluminescent color filter in a display device.

[0218] The color conversion layer or patterned film of the semiconductor nanoparticle composite can be prepared using an ink composition configured to form a pattern in an inkjet manner. Figure 1B Such a method may include the following steps: preparing an ink composition according to an embodiment; providing a substrate (e.g., having a pixel region patterned with electrodes and optionally bank- or trench-type partitions); and depositing the ink composition on the substrate (or pixel region) to form, for example, a first composite layer (or first region). The method may also include depositing the ink composition on the substrate (or pixel region) to form, for example, a second composite layer (or second region). The first composite layer and the second composite layer may be a first quantum dot layer and a second quantum dot layer, respectively. Formation of the first composite layer and the second composite layer may be performed simultaneously or sequentially.

[0219] The ink composition can be deposited using a suitable droplet ejector, such as an inkjet or nozzle printing system (having an ink reservoir and at least one print head). The deposited ink composition can be removed by solvent and polymerized by heating to provide a (first or second) composite layer. This method can provide highly precise nanoparticle-polymer composite films or patterned films in a short time using a simple method.

[0220] In the nanoparticle-polymer composites of the embodiments (e.g., the first composite), the (polymer) matrix can include the components described herein with respect to the compositions. In the composite, the matrix can comprise greater than or equal to about 10 wt %, greater than or equal to about 20 wt %, greater than or equal to about 30 wt %, greater than or equal to about 40 wt %, greater than or equal to about 50 wt %, or greater than or equal to about 60 wt %, based on the total weight of the composite. The matrix can comprise less than or equal to about 95 wt %, less than or equal to about 90 wt %, less than or equal to about 80 wt %, less than or equal to about 70 wt %, less than or equal to about 60 wt %, or less than or equal to about 50 wt %, based on the total weight of the composite.

[0221] The (polymer) matrix may include a dispersant (e.g., a binder polymer containing carboxylic acid groups), a polymerization product of a polymerizable monomer containing (at least one, e.g., at least two, at least three, at least four, or at least five) carbon-carbon double bonds (e.g., an insulating polymer), a polymerization product of a polymerizable monomer and a polythiol compound having at least two thiol groups (e.g., at terminal ends), or a combination thereof. The matrix may include a linear polymer, a cross-linked polymer, or a combination thereof. The (polymer) matrix may not include a conjugated polymer (other than cardo resin). The matrix may include a conjugated polymer.

[0222] The cross-linked polymer may include a thiol-ene resin, a cross-linked poly(meth)acrylate, a cross-linked polyurethane, a cross-linked epoxy resin, a cross-linked vinyl polymer, a cross-linked silicone resin, or a combination thereof. In an embodiment, the cross-linked polymer may be a polymerization product of the aforementioned polymerizable monomer and an optional polythiol compound.

[0223] The linear polymer may include repeating units derived from carbon-carbon unsaturated bonds (e.g., carbon-carbon double bonds). The repeating units may include carboxylic acid groups. The linear polymer may include ethylene repeating units.

[0224] The repeating unit containing a carboxylic acid group may include a unit derived from a monomer including a carboxylic acid group and a carbon-carbon double bond, a unit derived from a monomer having a dianhydride moiety, or a combination thereof.

[0225] The (polymer) matrix may include a compound containing carboxylic acid groups (eg, a binder, a binder polymer, or a dispersant (eg, for dispersing semiconductor nanoparticles or a binder)).

[0226] The first composite (or a film or pattern thereof) may have a thickness of, for example, less than or equal to about 25 micrometers (μm), less than or equal to about 20 μm, less than or equal to about 15 μm, less than or equal to about 10 μm, less than or equal to about 8 μm, or less than or equal to about 7 μm and greater than about 2 μm (e.g., greater than or equal to about 3 μm, greater than or equal to about 3.5 μm, greater than or equal to about 4 μm, greater than or equal to about 5 μm, greater than or equal to about 6 μm, greater than or equal to about 7 μm, greater than or equal to about 8 μm, greater than or equal to about 9 μm, or greater than or equal to about 10 μm).

[0227] Semiconductor nanoparticle(s), composites (or patterns thereof) including semiconductor nanoparticle(s), or color conversion panels including the same may be included in electronic devices. Such electronic devices may include, but are not limited to, displays, light-emitting diodes (LEDs), organic light-emitting diodes (OLEDs), quantum dot LEDs, sensors, solar cells, imaging sensors, photodetectors, or liquid crystal displays. The aforementioned quantum dots may be included in electronic devices. Such electronic devices may include, but are not limited to, portable terminals, monitors, notebook computers, televisions, electronic signage, cameras, and automobiles. The electronic device may include, but is not limited to, portable terminals, monitors, laptop computers, or televisions that include displays (or light-emitting devices) containing quantum dots. The electronic device may include, but is not limited to, a camera or mobile terminal that includes an image sensor that includes quantum dots. The electronic device may include, but is not limited to, a camera or vehicle that includes a photodetector that includes quantum dots.

[0228] Embodiments provide a color conversion layer (e.g., a color conversion structure or color conversion panel) including a color conversion region containing semiconductor nanoparticles described herein. The color conversion panel may include a color conversion layer including a color conversion region and, optionally, partitions defining each region of the color conversion layer. The color conversion region may include a first region corresponding to a first pixel, and the first region may include semiconductor nanoparticles or a composite. In the color conversion panel of an embodiment, the composite may be in the form of a patterned film. In another embodiment, the composite may be in the form of a sheet. The first region may include a first composite, and the first composite may include a matrix and semiconductor nanoparticles dispersed in the matrix and configured to emit a first light. Embodiments provide semiconductor nanoparticles or a population of semiconductor nanoparticles.

[0229] The color conversion layer (eg, color conversion structure) may include the composite according to embodiments or a patterned film thereof. Figure 2A is a schematic cross-sectional view of a color conversion panel according to an embodiment. Figure 2A The color conversion panel may optionally further include partition walls (eg, black matrix BM, banks, or a combination thereof) that define each region of the color conversion layer (eg, color conversion structure). Figure 2B An electronic device (display device) including a color conversion panel and a light source according to another embodiment is shown. In the electronic device of the embodiment, the color conversion panel including the color conversion layer or the color conversion structure can be provided on an on-chip LED (eg, on-chip micro LED). Figure 2BA circuit configured to drive the light source (e.g., a Si driver IC) can be positioned below a light source (e.g., a blue LED) configured to emit incident light (e.g., blue light). The color conversion layer can include a first composite containing semiconductor nanoparticles (or "first semiconductor nanoparticles") that emit a first light (e.g., green light) and a second composite containing semiconductor nanoparticles (or "second semiconductor nanoparticles") that emit a second light (e.g., red light), or a third composite that emits or passes a third light (e.g., incident light or blue light). A partition wall PW (e.g., comprising an inorganic material such as silicon or silicon oxide, or based on an organic material) can be positioned between the respective composites. The partition wall can include a trench, a through-hole, or a combination thereof. A first optical element (e.g., an absorptive color filter) can be positioned on the light extraction surface of the color conversion layer. Additional optical elements, such as microlenses, may also be positioned above the first optical element.

[0230] The color conversion region may include a first region configured to emit the aforementioned first light (or red light) (e.g., upon illumination by incident light). In embodiments, the first region may correspond to a red pixel. The first region may include a first composite (e.g., a luminescent composite). The first light may be red light having a peak emission wavelength within the range of 600 nm to 650 nm (e.g., 620 nm to 650 nm). The first light or red light may have a peak emission wavelength within the wavelength range described herein. The first light or red light may be semiconductor nanoparticles.

[0231] The color-conversion region may also include (e.g., one or more) second regions configured to emit a second light (e.g., green light) different from the first light (e.g., by illumination with excitation light). The second region may include a second composite. The semiconductor nanoparticle composite of the second region may include semiconductor nanoparticles (e.g., quantum dots) that emit light of a different wavelength (e.g., a different color) than the wavelength of the semiconductor nanoparticle composite of the first region. The peak emission wavelength of the green light may be greater than or equal to approximately 500 nm, greater than or equal to approximately 501 nm, greater than or equal to approximately 504 nm, greater than or equal to approximately 505 nm, or greater than or equal to approximately 520 nm. The maximum peak emission wavelength of the green light may be less than or equal to approximately 580 nm, less than or equal to approximately 560 nm, less than or equal to approximately 550 nm, less than or equal to approximately 530 nm, less than or equal to approximately 525 nm, less than or equal to approximately 520 nm, less than or equal to approximately 515 nm, or less than or equal to approximately 510 nm.

[0232] The color conversion panel may further include (one or more) third regions that emit or transmit third light (e.g., blue light) that is different from the first and second light. The incident light may include the third light (e.g., blue light) and optionally green light. The third light may include blue light having an emission peak wavelength within a range of greater than or equal to approximately 380 nm (e.g., greater than or equal to approximately 440 nm, greater than or equal to approximately 445 nm, greater than or equal to approximately 450 nm, or greater than or equal to approximately 455 nm) and less than or equal to approximately 480 nm (less than or equal to approximately 475 nm, less than or equal to approximately 470 nm, less than or equal to approximately 465 nm, or less than or equal to approximately 460 nm).

[0233] In some embodiments, a color conversion panel or color conversion layer may include multiple first regions, and the composite may be formed into a predetermined pattern so as to be disposed in each of the first regions of the color conversion panel. The composite (or its pattern) may be fabricated from an (ink) composition using any method, such as photolithography or inkjet. Therefore, embodiments relate to a composition including semiconductor nanoparticles, which will be described in detail below.

[0234] In embodiments, an electronic device or display device (e.g., a display panel) may further include a color conversion layer (or color conversion panel) and, optionally, a light source. The light source may provide incident light to the color conversion layer or color conversion panel. In embodiments, the display panel may include a light-emitting panel (or light source), the color conversion panel, and a light-transmitting layer positioned between the light-emitting panel and the color conversion panel. The color conversion panel may include a substrate, and the color conversion layer may be disposed on the substrate.

[0235] When present, the light source or light emitting panel can provide incident light to the color conversion layer or color conversion panel. The incident light can have a peak emission wavelength greater than or equal to about 440 nm (e.g., greater than or equal to about 450 nm) and less than or equal to about 580 nm (e.g., less than or equal to about 480 nm, less than or equal to about 470 nm, or less than or equal to about 460 nm).

[0236] In embodiments, electronic devices (eg, photoluminescent devices) may also include sheets of semiconductor nanoparticle composites. Figure 3B, the device 400 may include a backlight unit 410 and a liquid crystal panel 420, optionally wherein the backlight unit 410 may include a quantum dot-polymer composite sheet (QD sheet). For example, the backlight unit 410 may have a structure in which a reflector, a light guide plate LGP, a light source (blue LED, etc.), a quantum dot-polymer composite sheet (QD sheet) and an optical film (prism, dual brightness enhancement film (DBEF)), etc.) may be stacked. The liquid crystal panel 420 may be disposed on the backlight unit 410 and have a structure including a thin film transistor TFT, a liquid crystal LC and a color filter between two polarizers Pol. The quantum dot-polymer composite sheet (QD sheet) may include semiconductor nanoparticles (e.g., quantum dots) that emit red and green light after absorbing light from the light source. The blue light provided from the light source may be combined with the red and green light emitted from the corresponding semiconductor nanoparticles while passing through the quantum dot-polymer composite sheet and converted into white light. The white light may be separated into blue light, green light and red light by the color filter in the liquid crystal panel and then emitted to the outside for each pixel. Reference Figure 4 , a backlight unit (BLU) may be a direct-type BLU without a light guide plate and may include a plurality of LEDs (eg, mini LEDs), and a light conversion sheet or a QD sheet may be disposed on the BLU.

[0237] The color conversion panel may include a substrate, and the color conversion layer may be disposed on the substrate. The color conversion layer or the color conversion panel may include a patterned film of a semiconductor nanoparticle composite. The patterned film may include repeating segments configured to emit light of a desired wavelength. The repeating segments may include a second region. The second region may be a red light emitting segment. The repeating segments may include a first region. The first region may be a green light emitting segment. The repeating segments may include a third region. The third region may include a portion that emits or transmits blue light. Details of the first, second, and third regions are as described herein.

[0238] The light-emitting panel or light source may be an element that emits incident light (e.g., excitation light). The incident light may include blue light and optionally green light. The light source may include an LED. The light source may include an organic LED (OLED). The light source may include a micro-LED. Optical elements may be provided on the front surfaces (light-emitting surfaces) of the first and second regions to block (e.g., reflect or absorb) the blue light (and optionally green light), such as a blue light (and optionally green light) blocking layer or a first optical filter as described herein. In embodiments, the light source may include an organic light-emitting diode that emits blue light and an organic light-emitting diode that emits green light, and a green light-removing filter may also be provided on the third region through which the blue light is transmitted.

[0239] The light-emitting panel or light source may include a plurality of light-emitting units corresponding to the first and second regions, respectively. The light-emitting units may include first and second electrodes facing each other, and an (organic) electroluminescent layer located between the first and second electrodes. The electroluminescent layer may include an organic light-emitting material. For example, each light-emitting unit of the light source may include an electroluminescent device (e.g., an organic light-emitting diode (OLED)) configured to emit light of a predetermined wavelength (e.g., blue light, green light, or a combination thereof). The structure and material of the electroluminescent device (specifically, the organic light-emitting diode (OLED)) are not particularly limited.

[0240] Hereinafter, the display panel and the color conversion panel will be described in further detail with reference to the accompanying drawings.

[0241] Reference Figure 3A and Figure 3C The display panel 1000 according to an embodiment may include a light-emitting panel 40 and a color conversion panel 50. The display panel or electronic device may further include a light-transmitting layer 60 disposed between the light-emitting panel 40 and the color conversion panel 50, and an adhesive material 70 for bonding the light-emitting panel 40 and the color conversion panel 50. The light-transmitting layer may include a passivation layer, a filler material, an encapsulation layer, or a combination thereof (not shown). The material used for the light-transmitting layer may be appropriately selected without particular limitation. The material used for the light-transmitting layer may be an inorganic material, an organic material, an organic / inorganic hybrid material, or a combination thereof.

[0242] Each of the light-emitting panel 40 and the color conversion panel 50 may have opposing surfaces, that is, the two panels face each other, with a light-transmitting layer (or light-transmitting panel) 60 disposed between the two panels. The color conversion panel 50 may be disposed in a direction such that, for example, light emitted from the light-emitting panel 40 illuminates the light-transmitting layer 60. An adhesive material 70, such as a sealing material, may be disposed along the edges of the light-emitting panel 40 and the color conversion panel 50.

[0243] Figure 5A FIG is a plan view of an embodiment of a pixel arrangement of a display panel. Figure 5A , the display panel 1000 may include a display area 1000D displaying an image and a non-display area 1000P positioned in a peripheral area of the display area 1000D and provided with an adhesive material.

[0244] The display area 1000D may include a plurality of pixels PX arranged along rows (e.g., in the x-direction) and columns (e.g., in the y-direction), and each representative pixel PX may include a plurality of sub-pixels PX1, PX2, and PX3 that express (e.g., display) colors different from one another. An embodiment is illustrated using a structure in which three sub-pixels PX1, PX2, and PX3 are configured to provide a pixel. Embodiments may also include additional sub-pixels (such as a white sub-pixel) and may also include, for example, at least one sub-pixel that expresses (e.g., displays) the same color. The plurality of pixels PX may be aligned, for example, in a Bayer matrix, a matrix sold under the trade name PenTile, a diamond matrix, or the like, or a combination thereof.

[0245] Subpixels PX1, PX2, and PX3 can express (e.g., display) three primary colors or a combination of three primary colors, for example, red, green, blue, or a combination thereof. For example, the first subpixel PX1 can express (e.g., display) red, the second subpixel PX2 can express (e.g., display) green, and the third subpixel PX3 can express (e.g., display) blue.

[0246] In the drawings, all sub-pixels are shown as having the same size, but this is not limited to this, and at least one of the sub-pixels may be larger or smaller than the other sub-pixels. In the drawings, all sub-pixels are shown as having the same shape, but this is not limited to this, and at least one of the sub-pixels may have a different shape from the other sub-pixels.

[0247] In the display panel or electronic device according to the embodiment, the light emitting panel may include a substrate and a TFT (eg, a TFT containing an oxide, etc.) disposed on the substrate. A light emitting device (eg, having a tandem structure, etc.) may be disposed on the TFT.

[0248] The light-emitting device may include a light-emitting layer (e.g., a blue light-emitting layer, a green light-emitting layer, or a combination thereof) positioned between a first electrode and a second electrode facing each other. A charge generation layer may be disposed between each of the light-emitting layers. Each of the first and second electrodes may be patterned into a plurality of electrode elements corresponding to pixels. The first electrode may be an anode or a cathode. The second electrode may be a cathode or an anode.

[0249] The light emitting device may include an organic LED, a nanorod LED, a mini LED, a micro LED, or a combination thereof.

[0250] Figures 5B to 5Eare cross-sectional views illustrating examples of light-emitting devices. In an embodiment, a "micro-LED" may have a size of greater than or equal to about 100 microns, greater than or equal to about 150 microns, or greater than or equal to about 200 microns and less than or equal to about 1 mm, less than or equal to about 0.5 mm, less than or equal to about 0.15 mm, or less than or equal to about 0.12 mm, but is not limited thereto. In an embodiment, a "micro-LED" may have a size of less than about 100 microns, less than or equal to about 50 microns, or less than or equal to about 10 microns. The size of a micro-LED may be greater than or equal to about 0.1 micron, greater than or equal to about 0.5 micron, greater than or equal to about 1 micron, or greater than or equal to about 5 microns, but is not limited thereto.

[0251] Reference Figure 5B The light-emitting device 180 may include: a first electrode 181 and a second electrode 182 facing each other; a light-emitting layer 183 located between the first electrode 181 and the second electrode 182; and optional auxiliary layers 184 and 185 located between the first electrode 181 and the light-emitting layer 183 and between the second electrode 182 and the light-emitting layer 183, respectively.

[0252] The first electrode 181 and the second electrode 182 can be arranged to face each other along the thickness direction (e.g., the z-direction), and either one of the first electrode 181 and the second electrode 182 can be an anode, while the other can be a cathode. The first electrode 181 can be a light-transmitting electrode, a semi-transparent electrode, or a reflective electrode, and the second electrode 182 can be a light-transmitting electrode or a semi-transparent electrode. The light-transmitting or semi-transparent electrode can be made, for example, from a thin single layer or multiple layers of a metal film, including a conductive metal oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), tin oxide (SnO), aluminum tin oxide (AlTO), fluorine-doped tin oxide (FTO), or silver (Ag), copper (Cu), aluminum (Al), magnesium (Mg), magnesium-silver (Mg-Ag), magnesium-aluminum (Mg-Al), or combinations thereof. The reflective electrode may include a metal, a metal nitride, or a combination thereof, for example, silver (Ag), copper (Cu), aluminum (Al), gold (Au), titanium (Ti), chromium (Cr), nickel (Ni), an alloy thereof, a nitride thereof (for example, TiN), or a combination thereof, but the embodiment is not limited thereto.

[0253] The light emitting layer(s) 183 may include a first light emitting body that emits light having a blue emission spectrum, a second light emitting body that emits light having a green emission spectrum, or a combination thereof.

[0254] The blue emission spectrum can have a peak emission wavelength in a wavelength region of greater than or equal to about 400 nm to less than about 500 nm (and, within this range, in a wavelength region of about 410 nm to about 490 nm, about 420 nm to about 480 nm, about 430 nm to about 470 nm, about 440 nm to about 465 nm, about 445 nm to about 460 nm, or about 450 nm to about 458 nm).

[0255] The green emission spectrum can have a peak emission wavelength in a wavelength region of greater than or equal to about 500 nm to less than about 590 nm (and, within this range, in a wavelength region of about 510 nm to about 580 nm, about 515 nm to about 570 nm, about 520 nm to about 560 nm, about 525 nm to about 555 nm, about 530 nm to about 550 nm, or about 535 nm to about 545 nm).

[0256] For example, the light-emitting layer 183 or the light-emitting body included in the light-emitting layer 183 may include a phosphorescent material, a fluorescent material, or a combination thereof. For example, the light-emitting body may include an organic light-emitting body, wherein the organic light-emitting body may be a low-molecular compound, a polymer compound, or a combination thereof. The specific types of phosphorescent and fluorescent materials are not particularly limited, but can be appropriately selected from known materials. For example, the light-emitting body may include an inorganic light-emitting body, and the inorganic light-emitting body may be an inorganic semiconductor, quantum dots, perovskite, or a combination thereof. The inorganic semiconductor may include a metal nitride, a metal oxide, or a combination thereof. The metal nitride, metal oxide, or a combination thereof may include a Group III metal (such as aluminum, gallium, indium, thallium, etc.), a Group IV metal (such as silicon, germanium, tin), or a combination thereof. In an embodiment, the light-emitting body may include an inorganic light-emitting body, and the light-emitting device 180 may be a quantum dot light-emitting diode, a perovskite light-emitting diode, or a micro light-emitting diode (μLED). The material used for the inorganic light-emitting body can be appropriately selected.

[0257] In an embodiment, the light emitting device 180 may further include auxiliary layers 184 and 185. The auxiliary layers 184 and 185 may be disposed between the first electrode 181 and the light emitting layer 183 and between the second electrode 182 and the light emitting layer 183, respectively. The auxiliary layers 184 and 185 may be charge auxiliary layers for controlling the injection and / or mobility of charges. The auxiliary layers 184 and 185 may include at least one or two layers, and for example, may include a hole injection layer, a hole transport layer, an electron blocking layer, an electron injection layer, an electron transport layer, a hole blocking layer, or a combination thereof. If desired, at least one of the auxiliary layers 184 and 185 may be omitted. The auxiliary layer may be formed of a material appropriately selected from materials known for use in organic electroluminescent devices, and the like.

[0258] The light-emitting devices 180 provided in each of the sub-pixels PX1, PX2, and PX3 may be the same as or different from each other. The light-emitting devices 180 in each of the sub-pixels PX1, PX2, and PX3 may emit light having the same or different emission spectra. The light-emitting devices 180 in each of the sub-pixels PX1, PX2, and PX3 may emit, for example, light having a blue emission spectrum, light having a green emission spectrum, or a combination thereof. The light-emitting devices 180 in each of the sub-pixels PX1, PX2, and PX3 may be separated by a pixel-defining layer (not shown).

[0259] Reference Figure 5C The light-emitting device 180 may be a light-emitting device having a series structure, and may include: a first electrode 181 and a second electrode 182 facing each other; a first light-emitting layer 183a and a second light-emitting layer 183b located between the first electrode 181 and the second electrode 182; a charge generation layer 186 located between the first light-emitting layer 183a and the second light-emitting layer 183b; and optional auxiliary layers 184 and 185 located between the first electrode 181 and the first light-emitting layer 183a and / or between the second electrode 182 and the second light-emitting layer 183b, respectively.

[0260] Details of the first electrode 181 , the second electrode 182 , and the auxiliary layers 184 and 185 are as described herein.

[0261] The first light-emitting layer 183a and the second light-emitting layer 183b can emit light having the same or different emission spectra. In an embodiment, the first light-emitting layer 183a or the second light-emitting layer 183b can emit light having a blue emission spectrum or light having a green emission spectrum, respectively. The charge generation layer 186 can inject charge into the first light-emitting layer 183a and / or the second light-emitting layer 183b, and can control the charge balance between the first light-emitting layer 183a and the second light-emitting layer 183b. The charge generation layer 186 may include, for example, an n-type layer and a p-type layer, and may include, for example, an electron transport material and / or a hole transport material including an n-type dopant and / or a p-type dopant. The charge generation layer 186 may include one layer or two or more layers.

[0262] Reference Figure 5DThe light-emitting device 180 (having a series structure) may include: a first electrode 181 and a second electrode 182, facing each other; a first light-emitting layer 183a, a second light-emitting layer 183b and a third light-emitting layer 183c, located between the first electrode 181 and the second electrode 182; a first charge generation layer 186a, located between the first light-emitting layer 183a and the second light-emitting layer 183b; a second charge generation layer 186b, located between the second light-emitting layer 183b and the third light-emitting layer 183c; and optional auxiliary layers 184 and 185, respectively located between the first electrode 181 and the first light-emitting layer 183a and / or between the second electrode 182 and the third light-emitting layer 183c.

[0263] Details of the first electrode 181 , the second electrode 182 , and the auxiliary layers 184 and 185 are as described herein.

[0264] The first light-emitting layer 183a, the second light-emitting layer 183b, and the third light-emitting layer 183c can emit light having the same or different emission spectra. The first light-emitting layer 183a, the second light-emitting layer 183b, and the third light-emitting layer 183c can emit blue light. In an embodiment, the first light-emitting layer 183a and the third light-emitting layer 183c can emit light in the blue emission spectrum, and the second light-emitting layer 183b can emit light in the green emission spectrum. In another embodiment, the first light-emitting layer 183a and the third light-emitting layer 183c can emit light in the green emission spectrum, and the second light-emitting layer 183b can emit light in the blue emission spectrum.

[0265] The first charge generation layer 186a can inject charges into the first light-emitting layer 183a and / or the second light-emitting layer 183b and can control the charge balance between the first light-emitting layer 183a and the second light-emitting layer 183b. The second charge generation layer 186b can inject charges into the second light-emitting layer 183b and / or the third light-emitting layer 183c and can control the charge balance between the second light-emitting layer 183b and the third light-emitting layer 183c. Each of the first charge generation layer 186a and the second charge generation layer 186b can include one layer or two or more layers.

[0266] Reference Figure 5E In an embodiment, the light emitting device 180 may include a light emitting layer 183 , a first electrode 181 , a second electrode 182 , and a plurality of nanostructures 187 arranged in the light emitting layer 183 .

[0267] One of the first electrode 181 and the second electrode 182 may be an anode, and the other may be a cathode. The first electrode 181 and the second electrode 182 may be electrodes patterned according to the direction in which the plurality of nanostructures 187 are arranged, and may include, for example: a conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), tin oxide (SnO), aluminum tin oxide (AlTO), fluorine-doped tin oxide (FTO), etc.; silver (Ag), copper (Cu), aluminum (Al), gold (Au), titanium (Ti), chromium (Cr), nickel (Ni), alloys thereof, nitrides thereof (e.g., TiN); or combinations thereof, but the embodiment is not limited thereto.

[0268] The light-emitting layer 183 may include a plurality of nanostructures 187, and each of the sub-pixels PX1, PX2, and PX3 may include a plurality of nanostructures 187. In an embodiment, the plurality of nanostructures 187 may be arranged in a single direction, but the embodiment is not limited thereto. The nanostructures 187 may be, for example, compound-containing semiconductors configured to emit light of a predetermined wavelength when a current is applied, and may be, for example, linear nanostructures such as nanorods or nanoneedles. The diameter or long diameter of the nanostructures 187 may be, for example, several nanometers to several hundred nanometers, and the aspect ratio of the nanostructures 187 may be greater than approximately 1, greater than or equal to approximately 1.5, greater than or equal to approximately 2.0, greater than or equal to approximately 3.0, greater than or equal to approximately 4.0, greater than or equal to approximately 4.5, or greater than or equal to approximately 5.0 to less than or equal to approximately 20, approximately 1.5 to approximately 20, approximately 2.0 to approximately 20, approximately 3.0 to approximately 20, approximately 4.0 to approximately 20, approximately 4.5 to approximately 20, or approximately 5.0 to approximately 20.

[0269] Each of the nanostructures 187 may include a p-type region 187p, an n-type region 187n, and a multi-quantum well region 187i, and may be configured to emit light from the multi-quantum well region 187i. The nanostructures 187 may include, for example, gallium nitride (GaN), indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN), or a combination thereof, and may have, for example, a core-shell structure.

[0270] The plurality of nanostructures 187 may each emit light having the same or different emission spectra. In embodiments, the nanostructures may emit light having a blue emission spectrum, for example, light having a peak emission wavelength in a wavelength region of greater than or equal to about 400 nm to less than 500 nm, about 410 nm to about 490 nm, or about 420 nm to about 480 nm.

[0271] Figure 6 is a schematic cross-sectional view of a device (or display panel) according to an embodiment. Figure 6, the light source (or light emitting panel) may include an organic light emitting diode that emits blue light B (and optionally green light G). The organic light emitting diode OLED may include: at least two pixel electrodes 90a, 90b, 90c formed on a substrate 100; pixel defining layers 150a, 150b formed between adjacent pixel electrodes 90a, 90b, 90c; organic light emitting layers 140a, 140b, 140c formed on each pixel electrode 90a, 90b, 90c; and a common electrode layer 130 formed on the organic light emitting layers 140a, 140b, 140c. A thin film transistor (TFT) and a substrate may be provided below the organic light emitting diode OLED, which is not shown. The pixel areas of the OLED may be provided to correspond to the first area, the second area, and the third area described herein. In an embodiment, the color conversion panel and the light emitting panel may be as shown. Figure 6 In an embodiment, the color conversion panel can be stacked directly on the light emitting panel.

[0272] A stacked structure including a light-emitting nanostructure composite pattern 170 (e.g., a first region 11 or R including a light-emitting nanostructure that emits red light, a second region 21 or G including a light-emitting nanostructure that emits green light, and a third region 31 or B including or not including a light-emitting nanostructure (e.g., a light-emitting nanostructure that emits blue light)) and a substrate 240 can be disposed on a light source. Blue light emitted from the light source enters the first region and the second region and can emit red light and green light, respectively. Blue light emitted from the light source can pass through the third region. If desired, an element configured to block excitation light (a first optical filter 160 or an excitation light blocking layer) can be disposed between the light-emitting nanostructure composite layers R and G and the substrate. In an embodiment, the excitation light includes blue light and green light, and a green light blocking filter (not shown) can be added to the third region. The first optical filter or the excitation light blocking layer will be described in more detail herein.

[0273] Such a (display) device can be prepared by separately preparing the aforementioned stacked structure and (for example, a blue-emitting) LED or OLED and then combining the stacked structure and the LED or OLED. A (display) device can also be prepared by directly forming a light-emitting nanostructure composite layer (pattern) on the LED or OLED.

[0274] In a color conversion panel or display device, the substrate may be a substrate comprising an insulating material. The substrate may include glass; a polymer such as polyester, polycarbonate, or polyacrylate, such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN); a polysiloxane (e.g., PDMS); an inorganic material such as Al2O3 or ZnO; or a combination thereof, but the embodiment is not limited thereto. The thickness of the substrate may be appropriately selected based on the substrate material, but is not particularly limited. The substrate may be flexible. With respect to light emitted from the semiconductor nanoparticles, the substrate may have a transmittance of greater than or equal to approximately 50%, greater than or equal to approximately 60%, greater than or equal to approximately 70%, greater than or equal to approximately 80%, or greater than or equal to approximately 90%.

[0275] A wiring layer including thin film transistors, etc., may be formed on a substrate. The wiring layer may also include a gate line, a sustaining voltage line, a gate insulating film, a data line, a source electrode, a drain electrode, a semiconductor layer, a protective layer, etc. The detailed structure of the wiring layer may vary depending on the embodiment. The gate line and the sustaining voltage line may be electrically separated from each other, and the data line may be insulated from and intersect the gate line and the sustaining voltage line. The gate electrode, the source electrode, and the drain electrode may form a control terminal, an input terminal, and an output terminal of the thin film transistor, respectively. The drain electrode may be electrically connected to the pixel electrode to be described herein.

[0276] The pixel electrode can serve as an electrode (e.g., an anode) of a display device. The pixel electrode can be formed of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO). The pixel electrode can be formed of a material having light-blocking properties, such as gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd), or titanium (Ti). The pixel electrode can have a two-layer structure in which a transparent conductive material and a material having light-blocking properties are sequentially stacked.

[0277] Between two adjacent pixel electrodes, a pixel defining layer (PDL) may overlap ends of the pixel electrodes to divide the pixel electrodes into pixel units. The pixel defining layer is an insulating layer that can electrically block at least two pixel electrodes.

[0278] The pixel defining layer may cover a portion of the upper surface of the pixel electrode, and the remaining area of the pixel electrode not covered by the pixel defining layer may provide an opening. The organic light emitting layer to be described herein may be formed on the area defined by the opening.

[0279] The organic light-emitting layer can define each pixel region by the aforementioned pixel electrode and pixel-defining layer. In other words, a pixel region can be defined as a region in which an organic light-emitting unit layer is formed, and the organic light-emitting unit layer contacts a pixel electrode divided by the pixel-defining layer. In the display device according to the embodiment, the organic light-emitting layer can be defined as a first pixel region, a second pixel region, and a third pixel region, and each pixel region can be separated from each other by the pixel-defining layer to leave a predetermined gap.

[0280] In embodiments, the organic light-emitting layer can emit a third light in the visible light region or in the ultraviolet (UV) region. Each of the first to third pixel regions of the organic light-emitting layer can emit the third light. In embodiments, the third light can be light with higher energy in the visible light region, such as blue light (and optionally green light). In embodiments, all pixel regions of the organic light-emitting layer are designed to emit the same light, and each pixel region of the organic light-emitting layer can be formed from the same or similar materials or can exhibit the same or similar properties. This simplifies the process of forming the organic light-emitting layer, and the display device can be easily applied to large-scale / large-area processes, such as those manufactured using large-scale / large-area processes. However, the organic light-emitting layer according to embodiments is not necessarily limited to this; rather, the organic light-emitting layer can be designed to emit at least two different lights, such as at least two different colors.

[0281] The organic light emitting layer may include an organic light emitting unit layer in each pixel region, and each organic light emitting unit layer may further include auxiliary layers (eg, a hole injection layer, a hole transport layer, an electron transport layer, etc.) in addition to the light emitting layer.

[0282] The common electrode can serve as the cathode of the display device. The common electrode can be formed of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO). The common electrode can be formed on the organic light-emitting layer and can be integrated with the organic light-emitting layer.

[0283] A planarization layer or a passivation layer (not shown) may be formed on the common electrode. The planarization layer may include an insulating material (eg, transparent) for ensuring electrical insulation from the common electrode.

[0284] In an embodiment, the display device may further include a lower substrate, a polarizing plate disposed below the lower substrate, and a liquid crystal layer disposed between the stacked structure and the lower substrate. In the stacked structure, the photoluminescent layer (i.e., the light-emitting layer) may be disposed facing the liquid crystal layer. The display device may further include a polarizing plate positioned between the liquid crystal layer and the light-emitting layer. The light source may further include an LED and, if desired, a light guide plate.

[0285] In the embodiments, a display device (eg, a liquid crystal display device) is illustrated with reference to the drawings. Figure 7A : is a schematic cross-sectional view showing a liquid crystal display device according to an embodiment. Figure 7A , the display device of the embodiment may include a liquid crystal panel 200 , a polarizing plate 300 disposed under the liquid crystal panel 200 , and a backlight unit disposed under the polarizing plate 300 .

[0286] The liquid crystal panel 200 may include a lower substrate 210, a stacked structure, and a liquid crystal layer 220 disposed between the stacked structure and the lower substrate. The stacked structure may include a transparent substrate 240, a first optical filter layer 310, a photoluminescent layer 230 including a pattern of a semiconductor nanoparticle composite, and a second optical filter layer 311.

[0287] The lower substrate 210, also referred to as an array substrate, may be a transparent insulating material substrate. The substrate may be as described herein. A wiring board 211 may be disposed on the upper surface of the lower substrate 210. The wiring board 211 may include a plurality of gate lines (not shown) and data lines (not shown) defining pixel regions, thin film transistors disposed adjacent to intersections of the gate and data lines, and a pixel electrode for each pixel region, but the embodiment is not limited thereto. The details of such a wiring board are not particularly limited.

[0288] The liquid crystal layer 220 may be provided on the wiring board 211. The liquid crystal panel 200 may include an alignment layer 221 above and below the liquid crystal layer 220 to initially align the liquid crystal material included in the liquid crystal layer 220. Details of the liquid crystal layer and the alignment layer (e.g., liquid crystal material, alignment layer material, method of forming the liquid crystal layer, thickness of the liquid crystal layer, etc.) are not particularly limited.

[0289] The polarizing plate 300 can be disposed beneath the lower substrate. The material and structure of the polarizing plate 300 are not particularly limited. A backlight unit (e.g., one that emits blue light) can be disposed beneath the polarizing plate 300. The upper optical element or polarizing plate 300 can be disposed between the liquid crystal layer 220 and the transparent substrate 240, but is not limited thereto. For example, the upper polarizing plate can be disposed between the liquid crystal layer 220 and the photoluminescent layer 230. The polarizing plate can be any polarizer that can be used in a liquid crystal display device. The polarizing plate can be triacetyl cellulose (TAC) having a thickness of approximately 200 μm or less, but is not limited thereto. In another embodiment, the upper optical element can be a coating that controls the refractive index without a polarizing function.

[0290] The backlight unit includes a light source 110. The light source can emit blue light or white light. The light source can include but is not limited to a blue LED, a white LED, a white OLED, or a combination thereof.

[0291] The backlight unit may further include a light guide plate 120. In an embodiment, the backlight unit may be edge-type. For example, the backlight unit may include a reflector (not shown), a light guide plate (not shown) disposed on the reflector and providing a planar light source to the liquid crystal panel 200, and / or at least one optical sheet (not shown) (e.g., a diffuser, a prism sheet, etc.) on the light guide plate, but the present disclosure is not limited thereto. The backlight unit may not include a light guide plate. In an embodiment, the backlight unit may be direct-lit. For example, the backlight unit may have a reflector (not shown) and a plurality of fluorescent lamps at regular intervals on the reflector, or may have an LED operating substrate on which a plurality of light-emitting diodes may be disposed, a diffuser plate on the plurality of light-emitting diodes, and optionally at least one optical sheet. The details of such a backlight unit (e.g., each component of the light-emitting diodes, fluorescent lamps, light guide plate, various optical sheets, and reflector) are known and are not particularly limited.

[0292] A black matrix 241 may be disposed beneath the transparent substrate 240 and may have openings that conceal the gate lines, data lines, and thin-film transistors of the wiring board on the underlying substrate. For example, the black matrix 241 may have a lattice shape. The photoluminescent layer 230 may be disposed within the openings of the black matrix 241 and include a nanoparticle-polymer composite pattern comprising a first region R configured to emit a first light (e.g., red light), a second region G configured to emit a second light (e.g., green light), and a third region B configured to emit / transmit a third light (e.g., blue light). If desired, the photoluminescent layer may further include at least one fourth region. The fourth region may include quantum dots that emit light of a different color (e.g., cyan, magenta, or yellow) than the light emitted from the first to third regions.

[0293] In the photoluminescent layer 230 , the patterned segments may be repeated corresponding to the pixel regions formed on the lower substrate. A transparent common electrode 231 may be disposed on the photoluminescent layer 230 .

[0294] The third region B, configured to emit / transmit blue light, can be a transparent color filter that does not alter the light source's emission spectrum. In this case, blue light emitted from the backlight unit can enter in a polarized state and be emitted intact through the polarizing plate and liquid crystal layer. If desired, the third region can include quantum dots that emit blue light.

[0295] As described herein, if desired, the display device or light-emitting device according to the embodiment may further include an excitation light blocking layer or a first optical filter layer (hereinafter referred to as the first optical filter layer). The first optical filter layer may be provided between the bottom surface of the first region R and the second region G and the substrate (e.g., the upper substrate 240), or on the upper surface of the substrate. The first optical filter layer may be a sheet having an opening in a portion corresponding to the pixel region (the third region) displaying blue, and thus may be formed in the portion corresponding to the first region and the second region. That is, as Figure 1A 、 Figure 1B 、 Figure 6 and / or Figure 7A As shown in , the first optical filter layer may be integrally formed at a location other than the location overlapping the third region, but is not limited thereto. Two or more first optical filter layers may be spaced apart from each other at locations overlapping the first region, the second region, and optionally the third region. When the light source includes a green light-emitting device, a green light-blocking layer may be provided on the third region.

[0296] The first optical filter layer can block light in a predetermined wavelength range, for example, within the visible light region, while transmitting light in other wavelength ranges. For example, it can block blue light (or green light) while transmitting light other than blue light (or green light). The first optical filter layer can transmit, for example, green light, red light, and / or yellow light as a mixture thereof. The first optical filter layer can transmit blue light and block green light, and can be provided on pixels that emit blue light.

[0297] The first optical filter layer can substantially block the excitation light and transmit light in the desired wavelength region. The transmittance of the first optical filter layer for light in the desired wavelength range can be greater than or equal to about 70%, greater than or equal to about 80%, greater than or equal to about 90%, or even about 100%.

[0298] A first optical filter layer configured to selectively transmit red light may be disposed at a position overlapping the red light emitting segment, and a first optical filter layer configured to selectively transmit green light may be disposed at a position overlapping the green light emitting segment. The first optical filter layer may include: a first filter region that blocks (e.g., absorbs) blue light and red light and selectively transmits light in a predetermined range (e.g., greater than or equal to approximately 500 nm, greater than or equal to approximately 510 nm, or greater than or equal to approximately 515 nm to less than or equal to approximately 550 nm, less than or equal to approximately 545 nm, less than or equal to approximately 540 nm, less than or equal to approximately 535 nm, less than or equal to approximately 530 nm, less than or equal to approximately 525 nm, or less than or equal to approximately 520 nm); and a second ... A filter region that blocks (e.g., absorbs) blue and green light and selectively transmits light in a predetermined range (e.g., from approximately 600 nm or more, approximately 610 nm or more, or approximately 615 nm or more to approximately 650 nm or less, approximately 645 nm or less, approximately 640 nm or less, approximately 635 nm or less, approximately 630 nm or less, approximately 625 nm or less, or approximately 620 nm or less); or a first filter region and a second filter region. In embodiments, the light source may emit a mixture of blue and green light, and the first optical filter layer may further include a third filter region that selectively transmits blue light and blocks green light.

[0299] The first filter region may be disposed at a position overlapping the green light emission segment. The second filter region may be disposed at a position overlapping the red light emission segment. The third filter region may be disposed at a position overlapping the blue light emission segment.

[0300] The first filter region, the second filter region and the optional third filter region may be optically isolated.Such a first optical filter layer may help to improve the color purity of the display device.

[0301] The display device may further include a second optical filter layer (e.g., a red / green / yellow light recycling layer) disposed between the photoluminescent layer and the liquid crystal layer (e.g., between the photoluminescent layer and the upper polarizer). The second optical filter layer transmits at least a portion of the third light (excitation light) and reflects at least a portion of the first light and / or the second light. The first light may be red light, the second light may be green light, and the third light may be blue light. The second optical filter layer may transmit only the third light (B) in the blue wavelength range of approximately 500 nm or less. Light in wavelengths greater than approximately 500 nm (e.g., green light (G), yellow light, red light (R), etc.) may not pass through the second optical filter layer and is reflected. The reflected green and red light may pass through the first and second regions to be emitted outside the display device.

[0302] The second optical filter layer or the first optical filter layer may be formed as an integral layer having a relatively flat surface.

[0303] The first optical filter layer may include a polymer film containing a dye and / or pigment that absorbs light at the wavelengths to be blocked. The second optical filter layer or the first optical filter layer may include a single layer having a low refractive index, and may be, for example, a transparent film having a refractive index of approximately 1.4 or less, approximately 1.3 or less, or approximately 1.2 or less. The second optical filter layer or the first optical filter layer having a low refractive index may include, for example, porous silica, a porous organic material, a porous organic-inorganic composite, or the like, or a combination thereof.

[0304] The first optical filter layer or the second optical filter layer may include a plurality of layers having different refractive indices. The first optical filter layer or the second optical filter layer may be formed by stacking two layers having different refractive indices. For example, the first optical filter layer / the second optical filter layer may be formed by alternately stacking a material having a high refractive index and a material having a low refractive index.

[0305] In an embodiment, an electronic device may include a light emitting device (eg, an electroluminescent device) including the above-described semiconductor nanoparticles. Figure 7B : is a schematic cross-sectional view of a light emitting device (electroluminescent device) according to an embodiment. Figure 7B , the light-emitting device may include: an anode 1 and a cathode 5, facing each other; a quantum dot light-emitting layer 3, including a plurality of quantum dots, arranged between the anode and the cathode; and a hole auxiliary layer 2, located between the anode and the quantum dot light-emitting layer. The hole auxiliary layer may also include a hole injection layer (HIL), a hole transport layer (HTL), an electron blocking layer (EBL), or a combination thereof. The hole auxiliary layer may include any organic / inorganic material with hole properties. The quantum dot light-emitting device may also include an electron auxiliary layer 4 located between the cathode and the quantum dot light-emitting layer. The electron auxiliary layer may include an electron injection layer (EIL), an electron transport layer (ETL), a hole blocking layer (HBL), or a combination thereof. The electron auxiliary layer may include any organic / inorganic material with electronic properties.

[0306] Hereinafter, exemplary embodiments are described in further detail with reference to Examples. However, the embodiments of the present disclosure are not limited to the Examples.

[0307] Example Analytical methods [1] Photoluminescence analysis Photoluminescence (PL) spectra of the produced semiconductor nanoparticles and composites including the semiconductor nanoparticles were obtained using a Hitachi F-7000 spectrophotometer at an excitation wavelength of 450 nm.

[0308] The absolute quantum yield was measured using Otsuka's QE-2100.

[0309] [2] Elemental analysis and preparation yield calculation Inductively coupled plasma atomic emission spectroscopy (ICP-AES) was performed using a Shimadzu ICPS-8100.

[0310] [3] Optical density measurement and UV-visible spectroscopy analysis (1) A sample dispersion solution is obtained by dispersing a predetermined amount of semiconductor nanoparticles in toluene and optionally diluting it n-fold. The sample dispersion solution is placed in a cuvette providing a 10 mm (i.e., 1 cm) optical path length, and UV spectral analysis is performed using a Shimadzu UV-2600 to obtain a UV-visible absorption spectrum.

[0311] (2) From the obtained UV-visible absorption spectrum, UV absorbance at a predetermined wavelength (e.g., 450 nm) is obtained, and optical density (OD) is calculated therefrom by taking into account the dilution factor. The calculated optical density is divided by the weight of the semiconductor nanoparticles to obtain OD per gram at 450 nm.

[0312] [4] Transmission electron microscopy (TEM) analysis Transmission electron microscopy analysis of semiconductor nanoparticles was performed using a UTF30 Tecnai electron microscope.

[0313] Example 1: A 1M sulfur precursor solution (hereinafter referred to as the first sulfur precursor) was prepared by dispersing sulfur in oleylamine. Octadecene (ODE), silver acetate, and indium acetate were added to a 100 mL reaction flask and vacuum-treated at room temperature for 10 minutes. Subsequently, nitrogen was flowed into the reaction flask, and the first sulfur precursor, oleylamine, and dodecanethiol were added. The resulting mixture was heated at 40°C for 5 minutes, then the temperature was raised to 240°C and the solution was allowed to react for approximately 50 minutes. The temperature of the reaction flask was lowered to 180°C, trioctylphosphine (TOP) was added, and the mixture was cooled to room temperature.

[0314] A non-solvent is added to the obtained mixture to promote precipitation of the first semiconductor nanocrystals. The obtained first semiconductor nanocrystals are recovered by centrifugal separation and redispersed in toluene.

[0315] The amounts of the indium precursor and the first sulfur precursor were 1.6 mol and 7.1 mol, respectively, relative to 1 mol of the silver precursor.

[0316] 2 milliliters (mL) of a 5.7 molar (M) gallium precursor solution (hereinafter, referred to as gallium precursor) was prepared by dissolving gallium chloride in toluene.

[0317] In a flask, 841 milligrams (mg) of dimethylthiourea (DMTU) (a second sulfur precursor), oleylamine, and octadecene were added and vacuum treated at 120°C for 10 minutes. After the interior of the reaction flask was replaced with N2, the mixture was heated at room temperature or at an elevated temperature (e.g., 240°C or another predetermined temperature), and then the gallium precursor and the first semiconductor nanocrystal were added. Subsequently, the reaction flask was heated to 280°C and the solution was allowed to react for 70 minutes. The temperature of the reaction solution was lowered to 180°C, trioctylphosphine was added, and the mixture was cooled to room temperature. Ethanol was added as a non-solvent to promote the precipitation of the prepared semiconductor nanoparticles, and the obtained semiconductor nanoparticles were recovered by centrifugation and redispersed in toluene.

[0318] The prepared semiconductor nanoparticles were subjected to ICP-AES analysis, UV-Vis absorption spectroscopy and photoluminescence analysis, and the results are summarized in Tables 1, 2 and Figure 8 It was confirmed that the quantum efficiency of the produced semiconductor nanoparticles was greater than or equal to about 30%.

[0319] The fabricated semiconductor nanoparticles were subjected to TEM analysis and the results are shown in Figure 9 TEM analysis confirmed that the average size of the fabricated semiconductor nanoparticles was 8.52 nm.

[0320] Example 2 Semiconductor nanoparticles were prepared in the same manner as in Example 1, except that the molar ratio of the precursors was slightly adjusted and the cores were implanted at an elevated temperature (e.g., greater than or equal to about 180° C. or 240° C.). The produced semiconductor nanoparticles were subjected to ICP-AES analysis, UV-Vis absorption spectroscopy, and photoluminescence analysis, and the results are summarized in Tables 1, 2, and Figure 8 middle.

[0321] It was confirmed that the quantum efficiency of the manufactured semiconductor nanoparticles was greater than or equal to about 30%. It was also confirmed that the relative band edge emission intensity of the manufactured semiconductor nanoparticles was about 5.2.

[0322] The fabricated semiconductor nanoparticles were subjected to TEM analysis and the results are shown in Figure 10 TEM analysis confirmed that the average size of the produced particles was 7.78 nm.

[0323] Example 3 Except for adjusting the amount of the precursor, semiconductor nanoparticles were synthesized in the same manner as in Example 1. ICP-AES analysis and photoluminescence analysis were performed on the produced semiconductor nanoparticles, and the results are summarized in Tables 1 and 2.

[0324] Example 4 Except for adjusting the amount of the precursor, semiconductor nanoparticles were synthesized in the same manner as in Example 1. ICP-AES analysis and photoluminescence analysis were performed on the produced semiconductor nanoparticles, and the results are summarized in Tables 1 and 2.

[0325] Example 5 In the same manner as in Example 1, first semiconductor nanocrystals were obtained.

[0326] Semiconductor nanoparticles were synthesized in the same manner as in Example 1, except that 6.8 mL of a 0.06 M solution obtained by dissolving silver acetate in oleylamine was added to the reaction system together with the gallium precursor.

[0327] ICP-AES analysis and photoluminescence analysis were performed on the fabricated semiconductor nanoparticles, and the results are summarized in Tables 1 and 2.

[0328] Example 6 Prepare a 2 M selenium precursor solution by dispersing selenium in trioctylphosphine (TOP).

[0329] Octadecene (ODE), silver acetate, indium acetate, and dimethylthiourea (DMTU) were added to a 100 mL reaction flask and vacuum treated at room temperature for 10 minutes. Subsequently, nitrogen was flowed into the reaction flask, and oleylamine and dodecanethiol were added. The resulting mixture was heated at 40°C for 5 minutes, then raised to 260°C. After 5 minutes, a selenium precursor was added and allowed to react for approximately 30 minutes. The temperature of the reaction flask was lowered to 180°C, TOP was added, and the mixture was cooled to room temperature. A nonsolvent was added to the resulting mixture to promote the precipitation of the first semiconductor nanocrystals. The obtained first semiconductor nanocrystals were recovered by centrifugation and redispersed in toluene. The amounts of indium precursor, dimethylthiourea, and selenium precursor were 1.3 mol, 4.6 mol, and 2.3 mol, respectively, per 1 mol of silver precursor.

[0330] Semiconductor nanoparticles were synthesized in the same manner as in Example 1, except that the first semiconductor nanocrystals synthesized in this Example 6 were used.

[0331] The as-fabricated semiconductor nanoparticles were subjected to ICP-AES analysis and UV-Vis absorption spectroscopy, and the results are summarized in Tables 1 and Figure 8 It was confirmed that the ratio of the absorption at 550 nm to the absorption at 350 nm was 0.23.

[0332] Photoluminescence analysis was performed on the fabricated semiconductor nanoparticles. The semiconductor nanoparticles were found to emit light having a peak emission wavelength of 596 nm or greater. The full width at half maximum (FWHM) of the light was found to be approximately 52 nm. The quantum efficiency of the fabricated semiconductor nanoparticles was found to be greater than or equal to approximately 30%.

[0333] Table 1

[0334] Table 2

[0335] Through Table 2 and Figure 8 From the results of the experiment, it was confirmed that the exemplary semiconductor nanoparticles can emit red light with a relatively narrow full width at half maximum (FWHM) and exhibit improved absorption characteristics with respect to incident light (eg, blue light).

[0336] While the disclosure has been described in conjunction with what are presently considered to be practical embodiments, it is to be understood that the subject matter is not limited to the disclosed exemplary embodiments, but is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.

Claims

1. A semiconductor nanoparticle comprising silver, indium, gallium and sulfur, wherein: The semiconductor nanoparticles are substantially free of copper; wherein the molar ratio of gallium to indium in the semiconductor nanoparticles is greater than or equal to 0.8:1 and less than or equal to 20:1; The semiconductor nanoparticles are configured to emit red light having a peak emission wavelength greater than or equal to 600 nanometers and less than or equal to 650 nanometers and a full width at half maximum greater than or equal to 5 nanometers and less than or equal to 90 nanometers.

2. The semiconductor nanoparticle according to claim 1, wherein The red light has a full width at half maximum (FWHM) greater than or equal to 10 nanometers and less than or equal to 50 nanometers.

3. The semiconductor nanoparticle according to claim 1, comprising: first semiconductor nanocrystals comprising silver, indium, sulfur, and optionally selenium; as well as Second semiconductor nanocrystals include gallium, sulfur, and optionally silver.

4. The semiconductor nanoparticle according to claim 3, wherein The semiconductor nanoparticle has a core-shell structure, which includes: a core including the first semiconductor nanocrystal; and a shell including the second semiconductor nanocrystal and optionally further including selenium, and disposed on the core.

5. The semiconductor nanoparticle according to claim 1, wherein In the semiconductor nanoparticles, The molar ratio of gallium to indium is greater than or equal to 1:1 and less than or equal to 10:1, and optionally, the molar ratio of the sum of indium and gallium to sulfur is greater than or equal to 0.65:1 and less than or equal to 1.5:

1. The semiconductor nanoparticle according to claim 1 , wherein In the semiconductor nanoparticles, a molar ratio of gallium to indium is greater than or equal to 2.1:1 and less than or equal to 3.5:1, or a molar ratio of silver to indium is greater than or equal to 0.5:1 and less than or equal to 2.5:

1.

7. The semiconductor nanoparticle according to claim 1, wherein In the semiconductor nanoparticles, The molar ratio of silver to indium is greater than or equal to 1:1 and less than or equal to 2:1, and Optionally, the molar ratio of gallium to silver is greater than or equal to 0.8:1 and less than or equal to 1.65:

1.

8. The semiconductor nanoparticle according to claim 1, wherein In the semiconductor nanoparticles, a molar ratio of gallium to sulfur is greater than or equal to 0.37:1 and less than or equal to 1:

1.

9. The semiconductor nanoparticle according to claim 1, wherein In the semiconductor nanoparticles, a molar ratio of sulfur to indium is greater than or equal to 3.2:1 and less than or equal to 10:

1.

10. The semiconductor nanoparticle according to claim 1, wherein In the semiconductor nanoparticles, an indium concentration inside the semiconductor nanoparticles is greater than an indium concentration outside the semiconductor nanoparticles.

11. The semiconductor nanoparticle according to claim 1, wherein The semiconductor nanoparticles exhibit a peak emission wavelength of red light greater than or equal to 603 nanometers and less than or equal to 645 nanometers and a quantum yield greater than or equal to 30%.

12. The semiconductor nanoparticle according to claim 1, wherein In the UV-visible absorption spectrum, The semiconductor nanoparticles exhibit an optical density of greater than or equal to 0.8 per centimeter per milliliter per gram at 450 nanometers, or the semiconductor nanoparticles have a ratio of absorption at 550 nanometers to absorption at 350 nanometers of greater than or equal to 0.05:

1.

13. The semiconductor nanoparticle according to claim 1, wherein In the UV-visible absorption spectrum, The semiconductor nanoparticles have a diameter greater than or equal to 1 mL at 450 nm. mg -1 cm -1 The semiconductor nanoparticles have an optical density per gram of 550 nm or a ratio of absorption at 550 nm to absorption at 350 nm of greater than or equal to 0.2:1 and less than or equal to 0.8:

1.

14. A method for preparing the semiconductor nanoparticles according to claim 1, the method comprising the following steps: contacting a silver precursor, a first sulfur precursor, and an indium precursor in a first reaction medium comprising a first organic solvent; heating the first reaction medium to a reaction temperature to produce first semiconductor nanocrystals comprising silver, indium, and sulfur; and contacting a second sulfur precursor, the first semiconductor nanocrystals, and a gallium precursor in a second reaction medium comprising a second organic solvent; Wherein, the amount of the first sulfur precursor is greater than or equal to 2.5 moles and less than or equal to 20 moles per mole of the indium precursor.

15. The method according to claim 14, wherein The amount of the first sulfur precursor is greater than or equal to 4 moles and less than or equal to 10 moles per mole of the indium precursor.

16. The method according to claim 14, wherein The reaction temperature is greater than 210°C and less than or equal to 300°C.

17. An ink composition, the ink composition include: The semiconductor nanoparticles and liquid carrier according to claim 1.

18. A semiconductor nanoparticle composite, comprising: matrix; and the semiconductor nanoparticles according to claim 1, dispersed in the matrix.

19. A color conversion structure, comprising: Color conversion layer, including color conversion area, wherein the color conversion region comprises a first region corresponding to a first pixel, the first region comprising the semiconductor nanoparticles according to claim 1; and Optional partition walls define each region of the color conversion layer.

20. An electronic device comprising the semiconductor nanoparticle according to claim 1.

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