Deposition system
By setting up independent process channels and cleaning channels in the deposition system, using radio frequency field ionization gas, the problem of difficult films on the inner walls and carrier plates of the film deposition equipment is solved, and the cleaning efficiency and production efficiency are improved.
Patent Information
- Application Number
- CN202510600612.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-05-09
- Publication Date
- 2025-08-08
AI Technical Summary
During the film deposition process, the film deposited on the inner wall of the equipment and the carrier plate is difficult to clean, especially the film at the edges and corners is difficult to clean, affecting production efficiency.
By setting up independent process channels and cleaning channels in the deposition system, process gas and cleaning gas are respectively passed through, and a deposition radio frequency module is used to generate a radio frequency field in the process cavity to ionize the gas, so as to achieve deposition and cleaning of the film.
It improves the efficiency of film cleaning, reduces mutual contamination between gases, shortens cleaning time, and improves production capacity.
Smart Images
Figure CN120443148A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of thin film deposition technology, and in particular to a deposition system. Background Art
[0002] Deposition equipment coats substrates on carriers by ionizing process gases. During the deposition process, thin films inevitably form on the inner walls of the equipment and on the carrier. These deposits can impact the process. In related technologies, cleaning gases have difficulty reaching the corners of the equipment, making them difficult to clean. Summary of the Invention
[0003] The embodiments of the present application provide a deposition system that can improve the cleaning efficiency of the deposition system.
[0004] An embodiment of the present application provides a deposition system. The deposition system includes a deposition device. The deposition device includes an equipment body, a process channel, a cleaning channel, and a deposition RF module. The equipment body has a process cavity, and the process cavity is used to accommodate a carrier and allows the carrier to enter and exit. The process channel is connected to the process cavity and is used to introduce process gas. A plurality of cleaning channels surround the process channel, and the cleaning channels are respectively connected to the process cavity. The cleaning channels are spaced apart from the process channels, and the cleaning channels are used to introduce cleaning gas. The cleaning channels are arranged corresponding to the edges of the equipment body. The deposition RF module is connected to the equipment body and is used to feed an RF field into the process cavity.
[0005] Optionally, the deposition system also includes a cleaning device for cleaning the carrier, located on one side of the deposition device. The cleaning device includes a cleaning body, an air inlet channel, and a cleaning RF module. The cleaning body includes a cleaning chamber for accommodating the carrier and allowing it to enter and exit. The air inlet channel communicates with the cleaning chamber for admitting cleaning gas. The cleaning RF module is connected to the cleaning body for feeding an RF field into the cleaning chamber.
[0006] Optionally, the deposition system further includes a transport device for transporting the carrier between the process chamber and the cleaning chamber.
[0007] Optionally, the deposition device further includes a gas outlet channel, which is connected to the device body and communicates with the process chamber. The deposition device further includes a first monitor, which is installed in the gas outlet channel and is used to detect the composition of the gas in the gas outlet channel.
[0008] Optionally, the cleaning device further includes an exhaust channel connected to the cleaning body and communicated with the cleaning cavity. The cleaning device further includes a second monitor installed in the exhaust channel for detecting the composition of the gas in the exhaust channel.
[0009] Optionally, the deposition system further includes a remote plasma gas source module, which is connected to the process channel, the cleaning channel and the gas inlet channel respectively through the gas inlet component.
[0010] Optionally, the power of the remote plasma gas source module is 5 kW to 10 kW.
[0011] Optionally, the air intake assembly includes an air intake duct, a first cooling device, a second cooling device, and a magnetic ring. The first cooling device is mounted outside the air intake duct. The second cooling device is mounted outside the air intake duct, and the first cooling device is located on a side of the second cooling device closer to the remote plasma gas source module. The length of the second cooling device relative to the air intake duct is greater than the length of the first cooling device relative to the air intake duct. The magnetic ring is mounted outside the second cooling device.
[0012] Optionally, the air intake pipe includes a first pipe and a second pipe that are interconnected, the first cooling device and the second cooling device are arranged corresponding to the first pipe, the air intake assembly also includes a first insulating member, and the first insulating member is clamped between the second pipe and the first pipe.
[0013] Optionally, a first flange is provided at one end of the first pipe close to the second pipe, a second flange is provided at one end of the second pipe close to the first pipe, a first insulating member is clamped between the first flange and the second flange, and the air intake assembly also includes a second insulating member, which is sleeved over the first flange, the second flange and the first insulating member.
[0014] The beneficial effects of this application are: unlike existing technologies, by introducing process gas and clean gas separately through the process channel and the cleaning channel, cross-contamination between the different gases can be reduced. By aligning the cleaning channel with the edge of the equipment body, the incoming cleaning gas can be quickly diffused to the edge of the process chamber, thereby cleaning thin films deposited on the corners and improving film cleaning efficiency. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] Figure 1 is a schematic diagram of an embodiment of a deposition system of the present application;
[0016] Figure 2 is a schematic diagram of an embodiment of a deposition device of the present application;
[0017] Figure 3 Schematic diagram of the distribution of process pipes and cleaning pipes in an embodiment of the deposition equipment of the present application;
[0018] Figure 4 Schematic diagram of the distribution of process pipes and cleaning pipes in another embodiment of the deposition equipment of the present application;
[0019] Figure 5 It is a schematic diagram of an embodiment of the cleaning device of the present application;
[0020] Figure 6 is a schematic diagram of another embodiment of the deposition apparatus of the present application;
[0021] Figure 7 is a schematic diagram of another embodiment of the cleaning device of the present application;
[0022] Figure 8 This is a schematic diagram of an embodiment of the air intake assembly of the present application.
[0023] Figure 9 yes Figure 8 Schematic diagram of the local structure of the intake assembly shown. DETAILED DESCRIPTION
[0024] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.
[0025] The deposition equipment can coat the substrate located on the carrier by ionizing the process gas. In the process of the deposition equipment depositing the thin film on the substrate, the inner wall of the equipment and the carrier will inevitably be deposited with a thin film. When the film reaches a certain thickness, it will peel off and slag, affecting the quality of the product coating. Therefore, after a certain operating time, it is necessary to clean the inside of the chamber and the carrier to remove the thin film layer deposited thereon. In the related art, on the one hand, the number of carriers is greater than the number of equipment, and the carriers will be continuously transferred within the equipment to achieve the purpose of transferring the substrate. In this way, the deposition time of the thin film on the carrier and the deposition time on the inner wall of the equipment are not synchronized. The cleaning of the equipment and the carrier needs to be carried out in batches, which leads to an extension of the cleaning time and affects the production capacity. On the other hand, it is difficult for the cleaning gas to diffuse to the corners of the equipment, resulting in the film at the corners being difficult to clean. In order to improve the above technical problems, the present application provides the following embodiments.
[0026] Combine Figure 1 and Figure 2 The embodiment of the present application provides a deposition system 1. The deposition system 1 includes a deposition device 10. The deposition device 10 includes a device body 11, a process channel 12, a cleaning channel 13 and a deposition radio frequency module 14.
[0027] The device body 11 includes a process chamber 111, which provides the vacuum environment required for thin film deposition. The process chamber 111 houses a carrier plate and allows for its entry and exit. The carrier plate can carry substrates and transfer them into and out of the process chamber 111.
[0028] The process channel 12 is in communication with the process chamber 111 for introducing process gas, which can react with the surface of the substrate to deposit a thin film on the surface of the substrate.
[0029] Combine Figure 3 and Figure 4 , multiple cleaning channels 13 surround the process channel 12, the cleaning channels 13 are respectively connected to the process chamber 111, the cleaning channels 13 are spaced apart from the process channels 12, and the cleaning channels 13 are used to introduce cleaning gas, and the cleaning channels 13 are arranged corresponding to the edge of the equipment body 11. The cleaning channels 13 can be specifically used to introduce cleaning gas, so as to clean the inner wall of the process chamber 111. By separately introducing the process gas and the cleaning gas through the process channel 12 and the cleaning channel 13 respectively, the mutual contamination between different gases can be reduced. By arranging the cleaning channels 13 corresponding to the edge of the equipment body 11, the cleaning gas introduced can be quickly diffused to the edge of the process chamber 111, thereby cleaning the thin film deposited on the corners and improving the efficiency of thin film cleaning.
[0030] Optionally, the cleaning channel 13 being arranged corresponding to the edge of the equipment body 11 may mean that the minimum distance between the cleaning channel 13 and the edge of the equipment body 11 is smaller than the distance between the cleaning channel 13 and the process channel 12 .
[0031] The deposition RF module 14 is connected to the device body 11 and is used to feed an RF field into the process chamber 111. On the one hand, during the deposition process, the RF field in the process chamber 111 can ionize the process gas in the process chamber 111, thereby meeting the process requirements for thin film deposition on the substrate. On the other hand, during the cleaning of the inner wall of the process chamber 111, the RF field in the process chamber 111 can ionize the cleaning gas in the process gas chamber, thereby etching the thin film on the side wall of the process chamber 111, thereby cleaning the chamber.
[0032] In some embodiments, the process gas may be introduced through a remote plasma source (RPS), and the deposition RF module 14 may then feed a radio frequency or very high frequency (RF / VHF) electric field into the process chamber 111 to assist in ionizing the process gas. The cleaning gas may also be introduced through a remote plasma source, and the deposition RF module 14 may then feed a radio frequency or very high frequency (RF / VHF) electric field into the process chamber 111 to assist in ionizing the cleaning gas.
[0033] In some embodiments, the inner surface of the process chamber 111 is roughened to increase the roughness of the inner wall of the process chamber 111 , thereby enhancing the film adsorption capacity, reducing film slagging, and extending normal operation time.
[0034] Combine Figure 1 and Figure 5 In some embodiments, the deposition system 1 further includes a cleaning device 20 for cleaning carriers. Because the number of carriers is greater than the number of deposition devices 10, it is more efficient to separate the deposition devices 10 and carriers for cleaning at separate times according to their respective cleaning cycles. By using a separate cleaning device 20 to clean the carriers, the impact of cleaning on normal production rhythm can be reduced, thereby improving production capacity.
[0035] Specifically, the cleaning apparatus 20 is disposed on one side of the deposition apparatus 10. The cleaning apparatus 20 is disposed on one side of the deposition apparatus 10 to facilitate the transport of the carrier. Alternatively, the cleaning apparatus 20 can be disposed above or below the deposition apparatus 10 to utilize the empty space left by the carrier during its circulation, thereby improving space utilization.
[0036] The cleaning equipment 20 includes a cleaning body 21, an air inlet channel 22 and a cleaning radio frequency module 23. The cleaning body 21 has a cleaning cavity 211, which is used to accommodate a carrier and allows the carrier to enter and exit. The carrier can be transferred into the cleaning cavity 211 for cleaning, and then transferred out of the cleaning cavity 211 to join the normal production transmission cycle. The air inlet channel 22 is connected to the cleaning cavity 211 for introducing cleaning gas. The cleaning gas can oxidize and remove the thin film deposited on the carrier. The cleaning radio frequency module 23 is connected to the cleaning body 21, and is used to feed a radio frequency field into the cleaning cavity 211. The radio frequency field can ionize the cleaning gas so that the cleaning gas meets the process conditions for cleaning the carrier.
[0037] In some embodiments, the deposition system 1 further includes a transfer device 30 , which is used to transfer the carrier between the process chamber 111 and the cleaning chamber 211 .
[0038] Combine Figure 1 and Figure 5 Specifically, the transfer device 30 includes a deposition lift assembly, a cleaning lift assembly 32, and a return assembly. The return assembly can cooperate with the deposition lift assembly to transfer the carrier into and out of the process chamber 111, completing the carrier transfer cycle. The return assembly can cooperate with the cleaning lift assembly 32 to transfer the carrier into the cleaning chamber 211.
[0039] For example, the cleaning apparatus 20 is disposed below the deposition apparatus 10. The deposition lift assembly can lift the carrier and transfer it to the deposition apparatus 10, or lower the carrier to the return assembly, where it is then returned and lifted again to the process chamber 111. During this process, substrates can be placed or removed, without specific limitations.
[0040] When the carrier plate needs to be cleaned, the cleaning lifting assembly 32 can transfer the carrier plate in the return assembly to the cleaning device 20, and can also transport the cleaned carrier plate from the return assembly and the deposition lifting assembly to the deposition device 10. In the cleaning process of the cleaning device 20, the cleaning lifting assembly 32 does not need to be lifted or lowered, and the return assembly can directly transfer the carrier plate carried by the deposition lifting assembly to the side that needs to be lifted. The substrate can be normally removed or placed from the carrier plate during this process. In this way, the cleaning device 20 can be operated without affecting the normal operation of the deposition device 10, which is conducive to improving the production capacity of the deposition system 1.
[0041] The cleaning device 20 can clean all carriers in rotation according to the coating status of the carrier surfaces. Since the cleaning device 20 is installed above the return assembly, the addition of a spare carrier ensures that carrier cleaning does not affect the normal operation of the deposition device 10. By adding the cleaning device 20, the cleaning lift assembly 32, and a spare carrier, regular rotational cleaning of the carriers is essentially achieved. The deposition device 10 does not need to be shut down for carrier cleaning, significantly increasing the effective operating time of the deposition device 10. In other words, by combining the cleaning device 20 with the deposition device 10 for mixed use, the deposition device 10 saves cleaning time and significantly improves its effective utilization.
[0042] Combine Figure 2 In some embodiments, the deposition apparatus 10 further includes an air outlet channel 15, which is connected to the apparatus body 11 and communicates with the process chamber 111. The air outlet channel 15 can be connected to a negative pressure pump, which can exhaust the air in the process chamber 111, thereby achieving a vacuum environment in the process chamber 111. The negative pressure pump can also exhaust the process gas in the process chamber 111, thereby achieving the flow of the process gas to achieve film coating on the substrate. The negative pressure pump can also drive the flow of cleaning gas, thereby achieving cleaning of the deposition apparatus 10.
[0043] In some embodiments, the deposition apparatus 10 further includes a first monitor 16, which is mounted on the gas outlet channel 15 and configured to detect the composition of the gas within the gas outlet channel 15. During the cleaning process of the deposition apparatus 10, the first monitor 16 detects the composition of the gas within the gas outlet channel 15, thereby determining the degree of cleanliness of the deposition apparatus 10 and, therefore, determining when cleaning is required.
[0044] Specifically, the first monitor 16 can be an online laser spectrometer, which monitors the concentration of silicon-containing substances in the outlet channel 15 in real time to determine the cleaning time. When the laser beam from the laser spectrometer is irradiated onto a substance, the substance absorbs or emits light of a specific wavelength. These light signals are received by a detector and converted into electrical signals, which are processed to produce spectral information. By analyzing this spectral information, the composition, structure, and changes of the substance can be identified.
[0045] In related art cleaning schemes, cleaning time is primarily determined based on experience or visual inspection. If the cleaning time is too short, the cleaning may be incomplete, affecting subsequent battery efficiency and stability. If the cleaning time is too long, cleaning gas is wasted and equipment uptime is shortened. By monitoring the concentration of silicon-containing substances in the exhaust gas in real time and providing timely feedback to the equipment body 11, cleaning time is determined, providing a reliable basis for time control.
[0046] The laser spectrometer can be connected to the outlet channel 15 via a KF40 interface. An automatic valve interlocks with the program to control the valve's opening and closing, extending the laser spectrometer's maintenance time. Specifically, during normal production, the valve is closed and the laser spectrometer is inoperative. During cleaning, the valve is opened, and the laser spectrometer measures the gas composition at the outlet of the outlet channel 15 in real time. If the concentration of silicon-containing gas in the exhaust is detected to be below a set value, the analysis and processing system immediately sends a feedback signal to the device body 11, which automatically stops the gas supply and power supply, thus ending the cleaning process.
[0047] Combine Figure 5 In some embodiments, the cleaning device 20 further includes an exhaust channel 24, which is connected to the cleaning body 21 and communicates with the cleaning chamber 211. The exhaust channel 24 can be connected to a negative pressure pump, which can exhaust the air in the cleaning chamber 211, thereby achieving a vacuum environment in the cleaning chamber 211. The negative pressure pump can also drive the flow of cleaning gas, thereby cleaning the carrier. The cleaning device 20 further includes a second monitor 25, which is installed in the exhaust channel 24 and is used to detect the composition of the gas in the exhaust channel 24.
[0048] During the process of cleaning the carrier board by the cleaning device 20 , the second monitor 25 detects the gas composition in the exhaust channel 24 , so as to judge the cleanliness of the carrier board and determine the time required for cleaning.
[0049] Specifically, the second monitor 25 can be an online laser spectrometer, which monitors the concentration of silicon-containing substances in the exhaust duct 24 in real time to determine the cleaning time. When the laser beam from the laser spectrometer shines on a substance, the substance absorbs or emits light of a specific wavelength. These light signals are received by a detector and converted into electrical signals, which are processed to produce spectral information. By analyzing this spectral information, the composition, structure, and changes of the substance can be identified.
[0050] In related art cleaning schemes, cleaning time is primarily determined based on experience or visual inspection. If the cleaning time is too short, the cleaning process may be incomplete, impacting subsequent battery efficiency and stability. If the cleaning time is too long, cleaning gas may be wasted and equipment uptime may be reduced. By monitoring the concentration of silicon-containing substances in the exhaust gas in real time and providing timely feedback to the cleaning body 21, cleaning time is determined, providing a reliable basis for time control.
[0051] The laser spectrometer can be connected to the exhaust channel 24 via a KF40 interface. An automatic valve, interlocked with the program, controls the valve's opening and closing, extending the laser spectrometer's maintenance time. Specifically, during normal production, the valve is closed, and the laser spectrometer is inoperative. During cleaning, the valve is opened, and the laser spectrometer measures the gas composition at the exhaust channel 24 outlet in real time. If the concentration of silicon-containing gas in the exhaust is detected to be below a set value, the analysis and processing system immediately sends a feedback signal to the cleaning body 21, which automatically stops supplying gas and power, thus concluding the cleaning process.
[0052] Combine Figure 6 and Figure 7 In some embodiments, the deposition system 1 further includes a remote plasma gas source module 40, which is connected to the process channel 12, the cleaning channel 13, and the inlet channel 22 respectively through the gas inlet assembly 50. The remote plasma gas source module 40 can introduce plasma into the process chamber 111 and the cleaning chamber 211. The plasma introduced by the remote plasma gas source module 40 can be different. The remote plasma gas source module 40 can introduce process gas into the process chamber 111 through the process channel 12, introduce cleaning gas into the process chamber 111 through the cleaning channel 13, and introduce cleaning gas into the cleaning chamber 211 through the gas inlet channel 22.
[0053] In some embodiments, the power of the remote plasma gas source module 40 is between 5 kW and 10 kW. In other words, the remote plasma gas source module 40 uses a low-power power supply. During the thin film cleaning process, plasma can also corrode the chamber walls of the device. Using a low-power remote plasma gas source module 40 can reduce corrosion on the chamber walls of the device while meeting cleaning requirements, as well as minimize the impact on other hardware systems.
[0054] Furthermore, the remote plasma gas source module 40 of the present application can use a mixture of fluorophosgene and ozone as a cleaning gas to clean the deposition apparatus 10 and the carrier. Specifically, compared to nitrogen trifluoride and other fluorine-containing gases, fluorophosgene has a weaker dissociation energy and is easier to decompose. Using ozone instead of oxygen, which has a stronger oxidizing property than oxygen, is more likely to oxidize silicon thin films, which are then quickly removed by fluorophosgene. Therefore, using fluorophosgene and ozone for cleaning is more efficient.
[0055] Combine Figure 8 and Figure 9 In some embodiments, the air intake assembly 50 includes an air intake pipe 51, a first cooling device 52, a second cooling device 53 and a magnetic ring 55. The first cooling device 52 is mounted on the outside of the air intake pipe 51. The second cooling device 53 is mounted on the outside of the air intake pipe 51, and the first cooling device 52 is located on the side of the second cooling device 53 close to the plasma source gas module 40. The length of the second cooling device 53 corresponding to the air intake pipe 51 is greater than the length of the first cooling device 52 corresponding to the air intake pipe 51. The magnetic ring 55 is mounted on the outside of the second cooling device 53. Optionally, a coolant can be introduced into the first cooling device 52 and the second cooling device 53 to cool the air intake pipe 51, so as to quickly remove the heat from the air intake pipe 51. The types of coolants in the first cooling device 52 and the second cooling device 53 can be the same or different, and are not specifically limited here.
[0056] The air inlet pipe 51 can connect the remote plasma gas source module 40 with the process channel 12, the cleaning channel 13 or the air inlet channel 22. Cooling liquid can be passed into the first cooling device 52 and the second cooling device 53 to cool the air inlet pipe 51.
[0057] Specifically, the process gas or cleaning gas generated by the remote plasma gas source module 40 has a relatively high temperature, and the first cooling device 52 can first cool the process gas or cleaning gas. The second cooling device 53 can further cool the process gas or cleaning gas. By providing the first cooling device 52 and the second cooling device 53, the air intake assembly 50 can independently control the cooling effects of the first cooling device 52 and the second cooling device 53 according to the different temperature distributions of the process gas or cleaning gas. Optionally, the air intake pipe 51 is made of a corrosion-resistant and high-temperature resistant material, such as aluminum, nickel, a nickel alloy, or a titanium alloy. To enhance corrosion resistance and reduce the recombination rate of fluorine atoms contacting the surface, the inner wall of the air intake pipe is also provided with an aluminum oxide coating or a Teflon coating.
[0058] When the remote plasma gas source module 40 and the deposition RF module 14 are operating simultaneously to feed current to the device body 11, or when the cleaning RF module 23 is operating simultaneously to feed current to the cleaning body 21, RF interference may occur between the two. The provision of a magnetic ring 55 can suppress RF interference generated between the RF module and the remote plasma gas source module 40, achieving electromagnetic shielding and helping to improve the operating stability of the remote plasma gas source module 40, the deposition RF module 14, and the cleaning RF module 23. Optionally, a shielding cover may be provided around the magnetic ring 55 to reduce the effects of radiation.
[0059] In some embodiments, the air intake pipe 51 includes a first pipe 511 and a second pipe 512 that are interconnected, and the first cooling device 52 and the second cooling device 53 are arranged corresponding to the first pipe 511. The air intake assembly 50 also includes a first insulating member 54, and the first insulating member 54 is sandwiched between the second pipe 512 and the first pipe 511. The first pipe 511 is used to connect to the remote plasma gas source module 40, and the second pipe 512 is used to connect to the process channel 12, the cleaning channel 13 or the air intake channel 22. Since the first cooling device 52 and the second cooling device 53 will be grounded during the process of passing the coolant, if the equipment body 11 or the cleaning body 21 is electrically connected to the first pipe 511, it will cause the current to be grounded, affecting the current feeding. Insulating the first pipe 511 and the second pipe 512 by providing the first insulating member 54 is conducive to maintaining the normal operation of the equipment.
[0060] In some embodiments, a first flange 5111 is provided at one end of the first pipe 511 near the second pipe 512, and a second flange 5121 is provided at one end of the second pipe 512 near the first pipe 511. A first insulating member 54 is sandwiched between the first flange 5111 and the second flange 5121. The air intake assembly 50 further includes a second insulating member 58, which is sleeved over the first flange 5111, the second flange 5121, and the first insulating member 54. By providing the second insulating member 58 to cover the first flange 5111, the second flange 5121, and the first insulating member 54, a sealing effect can be achieved at the connection between the first pipe 511 and the second pipe 512.
[0061] In some embodiments, the air intake assembly 50 includes a first fastener 56 and a third insulating member 57 that is sleeved over the first fastener 56. The first fastener 56 penetrates the first flange 5111, the second flange 5121, and the first insulating member 54, thereby applying pressure to all three to achieve a sealing effect. The third insulating member 57 penetrates at least the first flange 5111 or the second flange 5121 and sleeves over the first fastener 56, thereby insulating the first fastener 56 from the first flange 5111 or the second flange 5121.
[0062] Optionally, the air intake assembly 50 further includes a second fastener 59, which is disposed over the second insulating member 58. The second fastener 59 can apply pressure to the second insulating member 58, thereby optimizing the sealing effect of the second insulating member 58. Optionally, the second fastener 59 has a through hole, allowing the tightening pressure to be adjusted using a screw. Optionally, the second insulating member 58 can be made of a material such as polytetrafluoroethylene. Optionally, a sealing ring is provided on the surface of the second insulating member 58.
[0063] The above are merely embodiments of the present application and are not intended to limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.
Claims
1. A deposition system, characterized in that: include: Deposition equipment, including: The equipment body has a process cavity, the process cavity is used to accommodate the carrier and allows the carrier to enter and exit; a process channel, connected to the process chamber and used for introducing process gas; Cleaning channels, wherein a plurality of cleaning channels surround the process channel, the cleaning channels are respectively connected to the process chamber, the cleaning channels are spaced apart from the process channel, the cleaning channels are used to introduce cleaning gas, and the cleaning channels are arranged corresponding to the edge of the equipment body; A deposition radio frequency module is connected to the device body and is used to feed a radio frequency field into the process chamber.
2. The deposition system according to claim 1, wherein: The deposition system further comprises: A cleaning device, the cleaning device is used to clean the carrier, and the cleaning device is arranged on one side of the deposition device; The cleaning equipment comprises: A cleaning body, the cleaning body having a cleaning cavity, the cleaning cavity being used to accommodate a carrier plate and allowing the carrier plate to enter and exit; an air inlet channel, connected to the cleaning chamber, for introducing cleaning gas; A cleaning radio frequency module is connected to the cleaning body and is used to feed a radio frequency field into the cleaning cavity.
3. The deposition system according to claim 2, wherein: The deposition system further includes a transport device configured to transport the carrier between the process chamber and the cleaning chamber.
4. The deposition system according to claim 1, wherein: The deposition device also includes a gas outlet channel, which is connected to the device body and communicates with the process chamber. The deposition device also includes a first monitor, which is installed in the gas outlet channel and is used to detect the composition of the gas in the gas outlet channel.
5. The deposition system according to claim 2, wherein: The cleaning device further includes an exhaust channel connected to the cleaning body and communicated with the cleaning chamber. The cleaning device further includes a second monitor installed in the exhaust channel for detecting the composition of the gas in the exhaust channel.
6. The deposition system according to claim 2, wherein: The deposition system further includes a remote plasma gas source module, which is connected to the process channel, the cleaning channel and the gas inlet channel respectively through an air inlet component.
7. The deposition system according to claim 6, wherein: The power of the remote plasma gas source module is 5 kW to 10 kW.
8. The deposition system according to claim 6, wherein: The air intake assembly comprises: Intake duct; A first cooling device is sleeved outside the air intake pipe; a second cooling device, sleeved outside the air inlet pipe, and the first cooling device is located on a side of the second cooling device close to the remote plasma gas source module, and a length of the second cooling device relative to the air inlet pipe is greater than a length of the first cooling device relative to the air inlet pipe; The magnetic ring is sleeved outside the second cooling device.
9. The deposition system according to claim 8, wherein: The air intake pipe includes a first pipe and a second pipe that are interconnected. The first cooling device and the second cooling device are arranged corresponding to the first pipe. The air intake assembly also includes a first insulating member. The first insulating member is sandwiched between the second pipe and the first pipe.
10. The deposition system according to claim 9, wherein: A first flange is provided at one end of the first pipe close to the second pipe, and a second flange is provided at one end of the second pipe close to the first pipe. The first flange and the second flange are sandwiched between the first insulating member. The air intake assembly also includes a second insulating member, and the second insulating member is sleeved over the first flange, the second flange and the first insulating member.