Method for inducing single crystal to single crystal conversion based on material intrinsic photothermal conversion effect and application

Abstract

The invention discloses a method for inducing single crystal to single crystal transformation and application. The core of the invention lies in that the molecular intrinsic photo-thermal conversion effect is utilized, single-crystal-to-single-crystal phase conversion of the crystal material is realized in situ through photo-thermal treatment, and the structural evolution of the crystal material is tracked and monitored in real time through single-crystal X-ray diffraction. The invention provides a novel method for realizing single-crystal-to-single-crystal conversion, aiming at overcoming the defects of the existing single light or heat induction single-crystal-to-single-crystal conversion method. The method provided by the invention is suitable for most organic or inorganic single crystal material systems, breaks through the limitation of a traditional transformation method on material types, enriches methods for realizing single crystal-single crystal transformation, and provides more possibilities for material selection in different fields.

Description

Technical Field

[0001] The present invention relates to the intersecting technical fields of chemistry, physics, material science, engineering, etc., and more particularly, to a method and application of inducing single crystal to single crystal transformation. Background Art

[0002] In the development and research of materials science, the single crystal to single crystal transformation plays a vital role and is the core foundation of the optical, morphological and topological chemical properties of crystalline materials. This transformation can precisely control the microstructure and macroscopic properties of materials, opening up broad avenues for the design and development of new functional materials. Light and heat are two stimulation methods that are currently widely studied and applied, but each has obvious limitations. Light stimulation is usually limited by the penetration depth of the light source and uneven energy distribution, resulting in uneven response within the material, making it difficult to achieve deep control of the overall performance of the material; thermal stimulation response systems are usually limited by the uneven thermal conductivity of molecular crystals, which easily leads to the formation of amorphous structures, and face great challenges in precise control, making it difficult to meet the needs of fine adjustment of the material's microstructure.

[0003] Therefore, it is urgent to develop new, efficient and precise stimulation methods to innovate the SCSC (Single-Crystal to Single-Crystal Transformation) transformation method. Summary of the Invention

[0004] To address the challenges presented by the prior art, the present invention proposes methods and applications for inducing single-crystal-to-single-crystal transformation. The core of this invention is to leverage the intrinsic molecular photothermal conversion effect to achieve in-situ single-crystal-to-single-crystal phase transformation of crystalline materials through photothermal treatment, and to track and monitor the structural evolution of the crystalline materials in real time through single-crystal X-ray diffraction. This invention provides a novel method for achieving single-crystal-to-single-crystal transformation, addressing the shortcomings of existing methods for inducing single-crystal-to-single-crystal transformation using only light or heat.

[0005] One of the objects of the present invention is to provide a method for inducing single crystal to single crystal transformation, the method comprising selecting a crystal material with intrinsic photothermal conversion properties, phototreating at least a portion of the selected crystal material and utilizing the intrinsic photothermal conversion properties of the crystal material to achieve in situ induced single crystal to single crystal transformation.

[0006] The present invention uses the intrinsic photothermal conversion effect of crystal materials to illuminate the crystal materials, putting the molecules in a high-energy excited state. Heat is then generated in the process of returning to the ground state through vibrational relaxation. This heat is used to induce the crystal material to undergo a phase change in the form of a single crystal to single crystal transition. This is a property of the molecules themselves and has a certain universality and can be extended to other crystal systems with intrinsic photothermal effects.

[0007] The intrinsic photothermal conversion effect of the present invention utilizes light as a stimulus. Compared with other heating methods, it has the following advantages: (1) light has a rapid response in time and is precisely controllable in space, which can achieve rapid local heating without affecting other parts of the material, making it more suitable for scenarios requiring rapid response and precise processing; (2) light can be remotely controlled without contacting the material; and (3) compared to heating, light is a cleaner, more environmentally friendly, simpler and more convenient method.

[0008] In the method of inducing single crystal to single crystal transformation of the present invention, preferably, the following steps are included:

[0009] S00, selecting a crystal material with intrinsic light-to-heat conversion performance, and determining a target temperature for light treatment of the crystal material based on the single crystal phase transition temperature and the thermal decomposition temperature of the crystal material;

[0010] S10, selecting irradiation light based on the absorption spectrum of the crystal material, irradiating the crystal material with different irradiation powers of the irradiation light to increase the temperature of the crystal material, and determining the irradiation power that can increase the temperature to the target temperature;

[0011] S20. Irradiate at least a portion of the crystal material to a target temperature using irradiation light according to the irradiation power determined in step S10, and maintain this temperature for a certain period of time so that the crystal reaches a thermal transition equilibrium state, thereby inducing a single crystal to single crystal transformation in the light-irradiated portion of the crystal material.

[0012] In step S20, the purpose of irradiating to the target temperature and maintaining it for a certain time is to make the crystal reach a thermal transition equilibrium state, thereby achieving the transformation from induced single crystal to single crystal; wherein, the irradiation to the target temperature and the maintenance time at this temperature can be determined by the following methods: 1) in preliminary experiments, the phase transition temperature is determined by DSC and TG, and the material is treated at the phase transition temperature to determine the phase transition type, such as structural transition or guest molecule activation, etc., and then according to the expected phase transition effect, for example, if the guest molecule is activated, it is determined in the preliminary experiment how long it takes for the material phase transition to reach equilibrium at this temperature, that is, how long it takes for the guest molecules to be fully activated, and the phase transition degree is set to 100%; 2) if it is a structural transition, the phase transition dynamics can be monitored by material fluorescence, absorption changes or in situ powder X-ray diffraction, and the time is selected according to the required degree based on the characteristic peaks, or characteristics such as deformation.

[0013] In the method for inducing single crystal to single crystal transformation of the present invention, preferably, step S00:

[0014] The crystalline material itself is a crystalline material with a photothermal conversion effect, and at a specific temperature, a molecular structure change or a stacking structure transformation will occur, which meets the basic requirements of the present invention for material selection; preferably, the thermal decomposition temperature of the crystalline material is greater than the single crystal phase transition temperature of the crystalline material; preferably, the crystalline material will not undergo thermal decomposition during the phase change process.

[0015] In the method of inducing single crystal to single crystal transformation according to the present invention, preferably,

[0016] The crystalline material is selected from organic crystalline materials or inorganic crystalline materials;

[0017] Preferably,

[0018] The inorganic crystal material is selected from perovskite crystals, noble metal nanocrystals or metal oxide crystals;

[0019] The organic crystal material is selected from metal organic framework materials (MOF), covalent organic framework materials (COF), hydrogen bond organic framework materials (HOF), organic small molecule crystals or organic small molecule molecular cage materials;

[0020] Further preferably, the crystalline material is selected from POC-SQ-2-MeCN or CR-DPA-OMe crystals (CR-DPA-OMe-CHCl3).

[0021] In the method for inducing single crystal to single crystal transformation of the present invention, preferably, step S00:

[0022] The target temperature is greater than or equal to the single crystal phase transition temperature of the crystal material, and the target temperature is less than or equal to the thermal decomposition temperature of the crystal material; preferably, the target temperature is greater than or equal to the single crystal phase transition temperature of the crystal material, and the target temperature is less than the thermal decomposition temperature of the crystal material; further preferably, the target temperature is greater than or equal to the single crystal phase transition temperature of the crystal material, and the target temperature is at least 50°C less than the thermal decomposition temperature of the crystal material.

[0023] In the method for inducing single crystal to single crystal transformation of the present invention, preferably, step S00:

[0024] Performing a thermal analysis test on the crystalline material using differential scanning calorimetry (DSC), and measuring the temperature represented by the peak value of the phase transition peak as the single crystal phase transition temperature of the crystalline material; and / or,

[0025] The thermal decomposition temperature of the crystalline material is determined by thermogravimetric analysis (TGA) testing. For example, the temperature at which the mass of the crystalline material begins to decrease significantly and the mass loss of the crystalline material itself reaches 0.5% is the thermal decomposition temperature of the crystalline material.

[0026] In the method for inducing single crystal to single crystal transformation of the present invention, preferably, step S10:

[0027] Characterizing the absorption spectrum of the crystalline material using a spectrophotometer; and / or,

[0028] The irradiation light is selected based on the wavelength at the absorption peak of the absorption spectrum of the crystal material; preferably, according to the absorption spectrum characteristics of the crystal material, the irradiation light of the laser or xenon lamp close to the maximum absorption peak is selected.

[0029] In the method of inducing single crystal to single crystal transformation according to the present invention, preferably,

[0030] Step S10:

[0031] Based on the irradiation light, a photothermal temperature rise test is carried out on the crystal material under different irradiation powers to determine the relationship between different irradiation powers and the temperature rise of the crystal material, a photothermal temperature rise curve is drawn, and then the irradiation power of the irradiation light that can reach the target temperature is determined through the photothermal temperature rise curve.

[0032] Step S10 of the present invention is to determine the relationship between irradiation power and sample temperature rise by conducting photothermal heating tests at different powers; specifically, the following steps are included: placing the selected crystal material on the sample stage, applying light and adjusting the appropriate light power according to the above-measured single crystal thermal transition temperature and photothermal heating curve, and using the temperature measuring device to feedback the temperature data in real time to determine whether the sample can be heated to the target temperature under the irradiation power.

[0033] The sample stage should be made of materials with good thermal stability and low thermal conductivity, such as quartz glass, to reduce the impact of heat loss on experimental results; the temperature measuring device must have high precision and fast response characteristics, and be able to accurately monitor crystal temperature changes in real time, with an accuracy of up to ±0.1°C; the light source should be a laser or xenon lamp close to the maximum absorption peak based on the absorption spectrum characteristics of the crystal material; in step S10, the irradiation power of the light can be adjusted by controlling the light source current and the distance between the light source and the sample, and determined by an optical power density meter.

[0034] In the method of inducing single crystal to single crystal transformation according to the present invention, preferably,

[0035] Step S00 also includes the step of determining the single crystal structure of the crystalline material; and / or,

[0036] Step S20 also includes the step of determining the single crystal structure of the crystal material during and / or after the irradiation with the irradiation light.

[0037] The present invention determines the structure of a single crystal by single crystal X-ray diffraction. The above S10 and S20 collect diffraction and image data and crystal structure analysis of the single crystal after photothermal treatment to determine the molecular structure, unit cell parameters, and crystal quality after transformation, and determine whether the single crystal to single crystal transformation has been successfully achieved.

[0038] A second object of the present invention is to provide an application of the method for inducing single crystal to single crystal transformation as described in one of the objects of the present invention in the preparation of crystal materials.

[0039] The main contributions and innovations of the present invention are as follows:

[0040] The present invention proposes a new method for achieving single crystal-to-single crystal transformation of crystalline materials. Based on the intrinsic photothermal conversion effect of the material, it includes steps such as controllable photothermal heating, temperature monitoring and crystal data acquisition, overcoming the defects of traditional thermal induction methods.

[0041] The present invention utilizes the intrinsic light-heat conversion capability of material molecules, avoids energy waste caused by overall heating, and greatly improves energy utilization.

[0042] The present invention can achieve highly accurate control of the crystal transformation process by precisely adjusting parameters such as the wavelength, intensity and irradiation time of the light source.

[0043] The present invention utilizes the focusability and directionality of the irradiation beam to achieve selective heating of specific areas of the crystal, so that the transformation process has excellent spatial selectivity.

[0044] Through summarizing a large amount of literature and conducting experimental verification, it was found that the method of the present invention is applicable to most organic or inorganic single crystal material systems, breaking through the limitations of traditional transformation methods on material types, enriching the methods for achieving single crystal-to-single crystal transformation, and providing more possibilities for material selection in different fields.

[0045] During the single crystal to single crystal transformation process, the present invention can combine single crystal X-ray diffraction to obtain information on changes in crystal structure, providing direct data support for in-depth research on the transformation mechanism, and helping to further optimize the transformation process and develop new material applications.

[0046] From the perspectives of energy utilization and material selection, this invention is more environmentally friendly and sustainable than traditional thermal induction methods. It reduces energy consumption, aligning with the development of modern green technology. In large-scale crystalline material production, it is expected to reduce environmental impact, lower production costs, and improve the economic and environmental benefits of the industry.

[0047] It has opened up a new path for the innovative application of crystal materials in cutting-edge fields such as high-end manufacturing and advanced energy, and is expected to promote technological revolution in related fields and help industrial upgrading and scientific and technological progress.

[0048] The substances and parameters not limited in the present invention can be selected according to the existing technology and belong to the conventional technical means in this field.

[0049] The endpoints and any values of the ranges disclosed in the present invention are not limited to the precise ranges or values, and these ranges or values should be understood to include values close to these ranges or values. For numerical ranges, the endpoint values of each range, the endpoint values of each range and a separate point value, and the separate point values can be combined with each other to obtain one or more new numerical ranges, and these numerical ranges should be considered as specifically disclosed in this article. Hereinafter, in principle, each technical solution can be combined with each other to obtain a new technical solution, which should also be considered as specifically disclosed in this article. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] Figure 1 is a differential scanning calorimetry (DSC) and thermogravimetric analysis (TG) diagram of the crystalline material of Example 1; wherein, Figure 1 (a) is the thermogravimetric analysis (TG) diagram; Figure 1 (b) is the differential scanning calorimetry (DSC) graph;

[0051] Figure 2 is the absorption spectrum of the crystal material of Example 1;

[0052] Figure 3 1 is a temperature rise curve of the crystal material of Example 1 under different light power densities;

[0053] Figure 4 Single crystal X-ray diffraction analysis was performed on the single crystal of the crystal material of Example 1 before and after light irradiation;

[0054] Figure 5 The photothermal response effect test results of the crystal material before and after light irradiation of Example 1;

[0055] Figure 6 Taking crystal images of the crystal material of Example 1 before and after illumination and after selective illumination using a fluorescence microscope;

[0056] Figure 7 The fluorescence change curve of the single crystal transformation process of the crystal material fluorescence detection in Example 1;

[0057] Figure 8 is the absorption spectrum of the crystal material of Example 2;

[0058] Figure 9 is a differential scanning calorimetry (DSC) and thermogravimetric analysis (TG) diagram of the crystalline material of Example 2; wherein, Figure 9 (a) is the thermogravimetric analysis (TG) diagram; Figure 9 (b) is the differential scanning calorimetry (DSC) graph;

[0059] Figure 10 is a temperature rise curve of the crystal material of Example 2 under a specific light power density;

[0060] Figure 11 Single crystal X-ray diffraction analysis was performed on the single crystal of the crystal material of Example 2 before and after light irradiation;

[0061] Figure 12 The photothermal response effect test results of the crystal material before and after light irradiation of Example 2;

[0062] Figure 13 This is an analytical diagram of the single crystal structure transformation of the crystal material of Example 1 before and after light irradiation;

[0063] Figure 14 This is an analytical diagram of the single crystal structure transformation of the crystal material of Example 2 before and after light irradiation. DETAILED DESCRIPTION

[0064] The present invention will be described in detail below with reference to specific drawings and embodiments. It is necessary to point out that the following embodiments are only used to further illustrate the present invention and cannot be understood as limiting the scope of protection of the present invention. Some non-essential improvements and adjustments made by those skilled in the art to the present invention based on the contents of the present invention still fall within the scope of protection of the present invention.

[0065] It should also be noted that the various specific technical features described in the following specific embodiments can be combined in any appropriate manner without contradiction. To avoid unnecessary repetition, the present invention will not further describe various possible combinations.

[0066] In addition, the various embodiments of the present invention may be arbitrarily combined as long as they do not violate the concept of the present invention. The technical solutions thus formed belong to part of the original disclosure of this specification and also fall within the scope of protection of the present invention.

[0067] Unless otherwise specified, the raw materials used in the examples and comparative examples are all disclosed in the prior art, for example, they can be directly purchased or prepared according to the preparation methods disclosed in the prior art.

[0068] Example 1

[0069] SPOC-SQ-2 (squaric acid derivative, structural formula C 40 H 24 Cl4N2O2)

[0070] Dissolve SPOC-SQ-2 (100 mg) in MeCN (acetonitrile, 50 mL), heat for 10 minutes, sonicate for 10 minutes, and filter the resulting solution. The filtrate is divided into 10 portions and added to white-capped bottles containing the same volume of pure MeCN solution. Place the white-capped bottles at room temperature in an undisturbed environment and allow them to evaporate for approximately 1-2 weeks to yield yellow crystals (SPOC-SQ-2-MeCN).

[0071] In order to test the thermal response ability of the above-mentioned organic crystal material, thermal analysis tests of the crystal were carried out using differential scanning calorimetry (DSC) and thermogravimetric analysis (TG). A sharp endothermic peak was found at 97°C, indicating a thermal phase transition process in which the crystal released acetonitrile. The thermal decomposition temperature of the material exceeded 300°C, verifying that it had good thermal stability at the subsequent photothermal treatment temperature. The results are as follows: Figure 1 and based on the single crystal phase transition temperature of the above-mentioned crystal material and the thermal decomposition temperature of the crystal material, it is determined that the target temperature for light treatment of the crystal material is 100°C.

[0072] In order to determine the light source, the ultraviolet absorption spectrum of the crystal was characterized by an ultraviolet spectrophotometer. The results are as follows: Figure 2 As shown, it has a high molar absorption coefficient at 300-550nm, which matches the 405nm laser.

[0073] In order to test the intrinsic photothermal conversion performance of the above organic crystal material, the photothermal behavior test of the crystal was carried out under 405nm laser irradiation with different power densities. The results are as follows Figure 3 The test results show that as the optical power density increases, the maximum heating temperature of the crystal material increases linearly, and at 300mW·cm -2 Under laser irradiation, the temperature can be effectively raised to 100°C, indicating that the material has the potential to be used as a single crystal to single crystal transition material induced by photothermal conversion.

[0074] In order to verify the single crystal to single crystal transformation induced by intrinsic photothermal conversion of the organic crystal material, the single crystal to single crystal transformation was carried out under 300 mW·cm -2 The single crystal X-ray diffraction analysis was performed on the single crystal before and after irradiation with 405nm laser for 30min. The results are as follows Figure 4 and Figure 13As shown, the X-ray diffraction (XRD) patterns of the material in different states are shown, including characteristic diffraction peaks in three states: SPOC-SQ-2-MeCN single crystal simulation (Simulated), untreated initial crystal (Pristine), and crystal after photothermal activation (Photothermal activation). The occurrence of single crystal to single crystal transformation can be intuitively explained. The original single crystal of the present invention is a co-crystal (SPOC-SQ-2-MeCN) formed by SPOC-SQ-2 molecules and acetonitrile solvent molecules. Under photothermal conditions, the crystal structure undergoes an orderly transformation, which is specifically manifested in that the acetonitrile molecules are completely activated and leave, the composition of the crystal is changed, and the molecular conformation of the crystal is also changed, including the torsion of multiple benzene rings in the molecule and the fine-tuning of the intermolecular interaction force, forming a new single crystal structure (SPOC-SQ-2a). The crystal structure data are shown in Table 1.

[0075] Table 1

[0076]

[0077] In order to test the controllability of the single crystal to single crystal transformation induced by the intrinsic photothermal conversion of the above organic crystal materials, the photothermal response effect of the crystal was tested under 405nm laser irradiation with different optical power densities. The results are as follows Figure 5 Take 50 mg of crystal material and test it at 300 mW·cm -2 Under high-power light irradiation for 15 minutes, the acetonitrile molecules in the crystal can be completely released, while under low-power light irradiation and dark environment, the above crystal material shows no change.

[0078] In order to detect the spatial selectivity of the single crystal to single crystal transformation induced by intrinsic photothermal conversion of the above organic crystal materials, fluorescence microscopy was used to capture crystal images before and after illumination and after selective illumination. After photothermal treatment, the fluorescence of the crystal sample significantly red-shifted, and only the illuminated area in the single crystal changed. The results are as follows Figure 6 shown.

[0079] Furthermore, in order to monitor the fluorescence change of the organic crystal material during the process of single crystal to single crystal transformation induced by intrinsic photothermal conversion, the above crystal material was used to conduct 300mW·cm -2 The 405nm laser photothermal test was conducted, and the fluorescence spectrum was measured every 5 minutes. The fluorescence change curve of the single crystal transformation process was detected by fluorescence detection. The results are as follows Figure 7 shown.

[0080] Example 2

[0081] Slowly evaporate in chloroform solution to obtain (keto acid derivative) CR-DPA-OMe crystals (CR-DPA-OMe-CHCl3, structural formula: C33 H 28 N2O7 ). In addition, thanks to the molecular structure of DAD, CR-DPA-OMe-CHCl3 exhibits absorption of 300-1100nm in the solid state, as shown in the following results. Figure 8 As shown, it is compatible with 808nm laser.

[0082] In order to test the thermal response characteristics of the above-mentioned organic crystal material, differential scanning calorimetry (DSC) and thermogravimetric analysis (TG) were used to conduct thermal analysis tests of the crystal. During the heating process, there was a sharp endothermic peak at 118°C, indicating that the crystal released chloroform during the thermal phase transition process; the thermal decomposition temperature of the material exceeded 300°C, indicating that it had good thermal stability at the subsequent photothermal treatment temperature. The results are as follows Figure 9 As shown, based on the single crystal phase transition temperature of the above-mentioned crystal material and the thermal decomposition temperature of the crystal material, the target temperature for light treatment of the crystal material is determined to be 125°C.

[0083] In order to test the photothermal conversion ability of the organic crystal materials, the photothermal behavior of the crystals under different laser irradiation powers was characterized. It was found that under 808 nm laser (0.9 W·cm -2 ) irradiation, CR-DPA-OMe-CHCl3 (30 mg) crystals can be quickly heated to 125 ° C, the results are as follows Figure 10 shown.

[0084] In order to verify the single crystal to single crystal transformation induced by photothermal conversion of the above organic crystal materials, the single crystal to single crystal transformation was carried out by 808 nm laser (0.9 W·cm -2 ) Single crystals were irradiated for 0.5h before and after single crystal X-ray diffraction analysis, the results are as follows Figure 11 and Figure 14 As shown, the single crystal to single crystal transformation is completed.

[0085] In order to test the controllability of the single crystal to single crystal transformation induced by the photothermal conversion of the above organic crystal material, the photothermal response effect of the crystal was tested under 808nm laser irradiation. The crystal material can activate the chloroform in the crystal with a change in mass under light, but shows no change in the dark environment. The results are as follows Figure 12 shown.

[0086] Excitingly, to our knowledge, this is the first report of a molecular crystal system undergoing single-crystal-to-single-crystal transition in response to NIR photothermal stimulation.

[0087] In summary, the present invention provides a new method for achieving single crystal to single crystal transformation. Compared with the existing technology, the intrinsic photothermal conversion of the material molecules relied on by the present invention has shown extremely significant advantages. Photothermal conversion covers a variety of principles such as localized plasma heating, non-radiative relaxation, and molecular thermal vibration. In fact, most materials have a certain degree of photothermal conversion capability. Based on this photothermal conversion characteristic of the molecules themselves, energy can be accurately delivered to the material molecules through the light beam, avoiding the energy waste caused by overall heating and greatly improving the energy utilization rate. At the same time, the present invention can achieve highly precise control of the crystal transformation process by precisely adjusting parameters such as the wavelength, intensity, and irradiation time of the light source. Moreover, the present invention utilizes the focusability and directionality of light to achieve selective heating of specific areas of the crystal, giving the transformation process excellent spatial selectivity, thereby opening up a new path for the innovative application of crystal materials in cutting-edge fields such as high-end manufacturing, chemistry and chemical engineering, biomedicine, electronic devices, and advanced energy, and is expected to trigger a technological revolution in related fields.

[0088] The present invention has been described in detail above with reference to specific embodiments and exemplary examples. However, these descriptions should not be construed as limiting the present invention. Those skilled in the art will appreciate that various equivalent substitutions, modifications, or improvements may be made to the technical solutions and implementations of the present invention without departing from the spirit and scope of the present invention, all of which fall within the scope of the present invention. The scope of protection of the present invention shall be determined by the appended claims.

[0089] All publications, patent applications, patents, and other references mentioned in this specification are incorporated herein by reference. Unless otherwise defined, all technical and scientific terms used in this specification have the meanings conventionally understood by those skilled in the art. In the event of conflict, the definitions in this specification shall prevail.

[0090] When this specification uses the prefix "well known to those skilled in the art", "prior art" or similar terms to introduce materials, substances, methods, steps, devices or components, the objects introduced by the prefix include those commonly used in the art when this application is filed, but also include those that are not commonly used at present but will become generally recognized in the art to be suitable for similar purposes.

[0091] In the context of this specification, any matters or items not mentioned are directly applicable to those known in the art without any changes except those explicitly stated.

Claims

1. A method for inducing single crystal to single crystal transformation, characterized in that: The method comprises selecting a crystal material with intrinsic light-to-heat conversion performance, performing photoprocessing on at least a portion of the selected crystal material, and utilizing the intrinsic light-to-heat conversion performance of the crystal material to achieve in-situ induced single crystal to single crystal transformation.

2. The method of inducing single crystal to single crystal transformation according to claim 1, characterized in that The following steps are involved: S00, selecting a crystal material with intrinsic light-to-heat conversion performance, and determining a target temperature for light treatment of the crystal material based on the single crystal phase transition temperature and the thermal decomposition temperature of the crystal material; S10, selecting irradiation light based on the absorption spectrum of the crystal material, irradiating the crystal material with different irradiation powers of the irradiation light to increase the temperature of the crystal material, and determining the irradiation power that can increase the temperature to the target temperature; S20. Irradiate at least a portion of the crystal material to a target temperature using irradiation light according to the irradiation power determined in step S10, and maintain this temperature for a certain period of time so that the crystal reaches a thermal transition equilibrium state, thereby inducing a single crystal to single crystal transformation in the light-irradiated portion of the crystal material.

3. The method of inducing single crystal to single crystal transformation according to claim 2, characterized in that: Step S00: The crystalline material itself is a crystalline material having a light-to-heat conversion effect, and a molecular structure change or a stacking structure transition occurs at a specific temperature; Preferably, the thermal decomposition temperature of the crystalline material is greater than the single crystal phase transition temperature of the crystalline material; preferably, the crystalline material does not thermally decompose during the phase transition process.

4. The method of inducing single crystal to single crystal transformation according to claim 3, characterized in that: The crystalline material is selected from organic crystalline materials or inorganic crystalline materials; Preferably, The inorganic crystal material is selected from perovskite crystals, noble metal nanocrystals or metal oxide crystals; The organic crystal material is selected from metal organic framework materials, covalent organic framework materials, hydrogen bond organic framework materials, organic small molecule crystals or organic small molecule molecular cage materials; Further preferably, the crystalline material is selected from POC-SQ-2-MeCN or CR-DPA-OMe crystals.

5. The method of inducing single crystal to single crystal transformation according to claim 2, characterized in that: Step S00: The target temperature is greater than or equal to the single crystal phase transition temperature of the crystal material, and the target temperature is less than or equal to the thermal decomposition temperature of the crystal material; preferably, the target temperature is greater than or equal to the single crystal phase transition temperature of the crystal material, and the target temperature is less than the thermal decomposition temperature of the crystal material.

6. The method of inducing single crystal to single crystal transformation according to claim 2, characterized in that: Step S00: Performing thermal analysis on the crystal material using differential scanning calorimetry to measure the temperature represented by the peak value of the phase transition peak as the single crystal phase transition temperature of the crystal material; and / or, The thermal decomposition temperature of the crystalline material was determined by thermogravimetric analysis.

7. The method of inducing single crystal to single crystal transformation according to claim 2, characterized in that: Step S10: Characterizing the absorption spectrum of the crystalline material using a spectrophotometer; and / or, The irradiation light is selected based on the wavelength at the absorption peak of the absorption spectrum of the crystal material; preferably, according to the absorption spectrum characteristics of the crystal material, the irradiation light of the laser or xenon lamp close to the maximum absorption peak is selected.

8. The method of inducing single crystal to single crystal transformation according to claim 2, characterized in that: Step S10: Based on the irradiation light, a photothermal temperature rise test is carried out on the crystal material under different irradiation powers to determine the relationship between different irradiation powers and the temperature rise of the crystal material, a photothermal temperature rise curve is drawn, and then the irradiation power of the irradiation light that can reach the target temperature is determined through the photothermal temperature rise curve.

9. The method of inducing single crystal to single crystal transformation according to claim 2, characterized in that: Step S00 also includes the step of determining the single crystal structure of the crystalline material; and / or, Step S20 also includes the step of determining the single crystal structure of the crystal material during and / or after the irradiation with the irradiation light.

10. Use of the method for inducing single crystal to single crystal transformation according to any one of claims 1 to 9 in the preparation of crystal materials.

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