A method, system, medium, and product for measuring thermal resistance of a semiconductor device

Abstract

The application discloses a kind of semiconductor device thermal resistance measurement method, system, medium and product, the method of the present application includes the following steps: utilize the rectification characteristic of ESD circuit in IO pin by measuring the relationship curve of IO pin current and junction temperature to obtain the junction temperature of each IO pin without pull-up and pull-down resistance when semiconductor device works at main frequency under stable state, and measure the cover temperature and device power consumption of semiconductor device;According to the cover temperature, device power consumption and the junction temperature of each IO pin when semiconductor device works at main frequency under stable state, the thermal resistance of semiconductor device at main frequency is calculated.The present application aims to realize a kind of without complex test equipment, suitable for a variety of semiconductor devices, can quickly and accurately calculate the semiconductor device thermal resistance semiconductor device thermal resistance measurement method, system, medium and product.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor device thermal resistance measurement, in particular to a semiconductor device thermal resistance measurement method, system, medium and product. BACKGROUND

[0002] With the rapid development of semiconductor technology, the integration and power consumption of integrated circuits are increasing, resulting in a significant increase in heat generated by semiconductor devices during operation. The thermal resistance of a semiconductor device is a key parameter for measuring the heat dissipation performance of the semiconductor device, and directly affects the reliability, performance and life of the device. Traditional thermal resistance measurement methods usually rely on complex thermal test equipment and longer test time, and it is difficult to accurately measure the device under actual working conditions. In addition, traditional thermal resistance measurement methods usually require the destruction of the device package or the use of additional temperature sensors, increasing the testing cost and complexity. SUMMARY

[0003] The technical problem to be solved by the present application is to provide a semiconductor device thermal resistance measurement method, system, medium and product that does not require complex test equipment and is suitable for a variety of semiconductor devices, which can quickly and accurately calculate the thermal resistance of a semiconductor device.

[0004] To solve the above technical problems, the technical scheme adopted by the present application is:

[0005] A semiconductor device thermal resistance measurement method, comprising the following steps:

[0006] S1, using the rectification characteristics of the ESD circuit in the IO pin to measure the relationship between the IO pin current and the junction temperature to obtain the junction temperature of each IO pin without pull-up and pull-down resistance when the semiconductor device is working at the main frequency under stable state , and measuring the cover temperature of the semiconductor device and the device power consumption ; wherein the IO pin current refers to the current of the diode in the ESD circuit corresponding to the IO pin;

[0007] S2, calculating the thermal resistance of the semiconductor device at the main frequency according to the cover temperature , the device power consumption and the junction temperature of each IO pin when the semiconductor device is working at the main frequency under stable state . .

[0008] Optionally, step S1 comprises:

[0009] S1.1, placing the semiconductor device in a temperature adjustable environment;

[0010] S1.2, set a temperature point of the adjustable temperature environment;

[0011] S1.3, judge whether the temperature point is maintained for a specified time length, if not, keep the temperature, wait for the device junction temperature to be the same as the environment temperature, and jump to step S1.3 to continue judging; otherwise, jump to step S1.4;

[0012] S1.4, measure the IO pin current of the N IO pins without pull-up and pull-down resistors of the semiconductor device;

[0013] S1.5, judge whether the set temperature point meets the requirement, if not, change the temperature point of the adjustable temperature environment and jump to step S1.3; otherwise, jump to step S1.6;

[0014] S1.6, take the set temperature point as the junction temperature, and draw a relationship curve between the IO pin current and the junction temperature;

[0015] S1.7, keep the semiconductor device at the environment temperature, and make the semiconductor device work at the main frequency;

[0016] S1.8, judge whether the semiconductor device is in a stable state, if yes, jump to step S1.9; otherwise, jump to step S1.8 to continue judging;

[0017] S1.9, measure the cover plate temperature of the semiconductor device and the device power consumption ;

[0018] S1.10, measure the IO pin current of the N IO pins without pull-up and pull-down resistors of the semiconductor device;

[0019] S1.11, obtain the corresponding N junction temperatures of the N IO pins without pull-up and pull-down resistors according to the relationship curve between the IO pin current and the junction temperature .

[0020] Optionally, the specified time length in step S1.3 is 30 minutes.

[0021] Optionally, the judgment in step S1.5 whether the set temperature point meets the requirement includes judging whether the set temperature point is greater than or equal to 5, if yes, it is determined that the temperature point meets the requirement, otherwise, it is determined that the temperature point does not meet the requirement.

[0022] Optionally, the temperature point of the adjustable temperature environment in step S1.2 is-55℃, and the changed temperature points in step S1.5 include-15℃, 25℃, 65℃, 105℃ and 125℃ respectively.

[0023] Optionally, the ambient temperature in step S1.7 is 25℃.

[0024] Optionally, step S2 comprises: measuring the junction temperature of each IO pin averaging to obtain the junction temperature of the semiconductor device at the main frequency , according to calculating the thermal resistance of the semiconductor device at the main frequency , wherein is the cover plate temperature, is the device power consumption.

[0025] In addition, the present application also provides a semiconductor device thermal resistance measurement system, comprising a microprocessor and a memory connected to each other, the microprocessor is programmed or configured to execute the semiconductor device thermal resistance measurement method.

[0026] In addition, the present application also provides a computer readable storage medium, the computer readable storage medium stores a computer program or instructions, the computer program or instructions are programmed or configured to execute the semiconductor device thermal resistance measurement method by the processor.

[0027] In addition, the present application also provides a computer program product, comprising a computer program or instructions, the computer program or instructions are programmed or configured to execute the semiconductor device thermal resistance measurement method by the processor.

[0028] Compared with the prior art, the present application mainly has the following beneficial effects: 1. The semiconductor device thermal resistance measurement method of the present application utilizes the rectification characteristics of the IO pin ESD circuit without up and down pull, and can complete thermal resistance measurement without complex equipment. 2. The semiconductor device thermal resistance measurement method of the present application ensures the accuracy of the measurement results through multi-temperature point measurement and junction temperature measurement under actual working state. 3. The semiconductor device thermal resistance measurement method of the present application is simple to operate, suitable for various semiconductor devices, and has wide applicability. 4. The semiconductor device thermal resistance measurement method of the present application does not need to damage the device package or use additional temperature sensors, which reduces the test cost and complexity. BRIEF DESCRIPTION OF DRAWINGS

[0029] Figure 1 is the basic flowchart of the embodiment method of the present application.

[0030] Figure 2 is the detailed flowchart of the embodiment method of the present application. DETAILED DESCRIPTION

[0031] The present application will be further described in detail below in conjunction with the drawings and specific embodiments of the specification.

[0032] As Figure 1As shown, the semiconductor device thermal resistance measurement method of the embodiment includes the following steps:

[0033] S1, using the rectification characteristics of the ESD (Electrostatic Discharge) circuit in the IO pin to obtain the junction temperature of each IO pin without pull-up and pull-down resistance when the semiconductor device is working at the main frequency and in a stable state by measuring the relationship curve between the IO pin current and the junction temperature , and measuring the cover temperature of the semiconductor device and the device power consumption ; wherein the IO pin current refers to the current of the diode in the ESD circuit corresponding to the IO pin;

[0034] S2, calculating the thermal resistance of the semiconductor device at the main frequency according to the cover temperature , the device power consumption and the junction temperature of each IO pin of the semiconductor device when working at the main frequency and in a stable state .

[0035] The ESD circuit (Electrostatic Discharge Circuit) is a key component in a semiconductor device for preventing damage from electrostatic discharge. The input / output port of the semiconductor device often uses a diode structure to discharge current, thereby protecting the internal circuit. The rectification characteristics of the ESD circuit refer to the nonlinear current-voltage characteristics of the diode, which is turned on when forward biased and cut off when reverse biased. The forward conduction current increases with temperature under a fixed voltage. Therefore, the forward conduction current of the diode in the ESD circuit in the IO pin changes with temperature. By measuring the current of the diode in the ESD circuit at different temperatures, a relationship curve between temperature and electrical parameters can be established, which can be used for junction temperature measurement. See Figure 2 , the step S1 in the embodiment includes:

[0036] S1.1, place the semiconductor device in a temperature adjustable environment; as an optional embodiment, the DSP device in the embodiment is a DSP device, and the temperature adjustable environment uses a ThermoStream temperature control platform. The DSP device is placed on a Verigy93000 machine DUT Loadboard, and the ThermoStream temperature control platform is used for temperature adjustment;

[0037] S1.2, set the temperature point of the temperature adjustable environment;

[0038] S1.3, determine whether the temperature point is maintained for a specified time period; if not, keep the temperature and wait for the device junction temperature to be the same as the ambient temperature, and jump to step S1.3 for further determination; otherwise, jump to step S1.4;

[0039] ​S1.4, measuring IO pin currents of N IO pins without pull-up and pull-down resistors of the semiconductor device;

[0040] S1.5, judging whether the number of set temperature points meets the requirement, if not, changing the temperature points of the adjustable temperature environment and jumping to step S1.3; otherwise, jumping to step S1.6;

[0041] S1.6, taking the set temperature points as junction temperatures, and drawing a curve of IO pin currents versus junction temperatures;

[0042] S1.7, keeping the semiconductor device at an ambient temperature, and making the semiconductor device work at a main frequency;

[0043] S1.8, judging whether the semiconductor device is in a stable state, if yes, jumping to step S1.9; otherwise, jumping to step S1.8 for continuous judgment;

[0044] S1.9, measuring a cover temperature of the semiconductor device and a device power consumption ;

[0045] S1.10, measuring IO pin currents of N IO pins without pull-up and pull-down resistors of the semiconductor device;

[0046] S1.11, obtaining corresponding N junction temperatures of the N IO pins without pull-up and pull-down resistors according to the curve of IO pin currents versus junction temperatures .

[0047] The step S1 in the embodiment obtains the junction temperatures of the N IO pins without pull-up and pull-down resistors of the semiconductor device when the semiconductor device works at the main frequency and is in the stable state by measuring the curve of IO pin currents versus junction temperatures through the rectification characteristics of the ESD circuit in the IO pin , and measures the cover temperature of the semiconductor device and the device power consumption , so that the thermal resistance measurement is completed without complex equipment, and the thermal resistance measurement cost is reduced and the thermal resistance measurement efficiency is improved.

[0048] As an optional implementation, the specified time length in step S1.3 is 30 minutes.

[0049] As an optional implementation, the judgment in step S1.5 whether the number of set temperature points meets the requirement includes judging whether the number of set temperature points is greater than or equal to 5, if yes, determining that the number of temperature points meets the requirement, otherwise, determining that the number of temperature points does not meet the requirement.

[0050] As an optional implementation, in step S1.2, the temperature point of the adjustable temperature environment is set to -55℃, and in step S1.5, the temperature point of the adjustable temperature environment is changed. The temperature points changed in different steps include -15℃, 25℃, 65℃, 105℃ and 125℃ respectively. At a temperature of -55℃, maintain the ambient temperature for 30 minutes. With the remaining pins floating, select seven I / O pins of the device without pull-up / pull-down resistors and quickly apply a 0.6V voltage between each pin and ground, then measure the pin current of each of the seven I / O pins. Similarly, at a temperature of -15℃, maintain the ambient temperature for 30 minutes. With the remaining pins floating, select seven I / O pins of the device without pull-up / pull-down resistors and quickly apply a 0.6V voltage between each pin and ground, then measure the pin current of each of the seven I / O pins. At a temperature of 25℃, maintain the ambient temperature for 30 minutes. With the remaining pins floating, select seven I / O pins of the device without pull-up / pull-down resistors and quickly apply a 0.6V voltage between each pin and ground, then measure the pin current of each of the seven I / O pins. Pin current; At a temperature of 65℃, maintaining the ambient temperature for 30 minutes, with the other pins floating, select 7 I / O pins of the device without pull-up / pull-down resistors, and quickly apply a 0.6V voltage between the pin and ground to each of the 7 I / O pins, measuring the pin current of each 7 I / O pin; At a temperature of 105℃, maintaining the ambient temperature for 30 minutes, with the other pins floating, select 7 I / O pins of the device without pull-up / pull-down resistors, and quickly apply a 0.6V voltage between the pin and ground to each of the 7 I / O pins, measuring the pin current of each 7 I / O pin; At a temperature of 125℃, maintaining the ambient temperature for 30 minutes, with the other pins floating, select 7 I / O pins of the device without pull-up / pull-down resistors, and quickly apply a 0.6V voltage between the pin and ground to each of the 7 I / O pins, measuring the pin current of each 7 I / O pin. Based on the measured pin current and temperature, plot the current-to-junction-temperature curves of the 7 I / O pins.

[0051] In this embodiment, the ambient temperature in step S1.7 is 25°C. In this embodiment, the ambient temperature is maintained at 25°C, allowing the device to operate at a 600MHz main frequency for 30 minutes; the power consumption of the device at the 600MHz main frequency is measured. The temperature of the cover plate was measured to be 1.114W. The temperature was 36.6℃. After measuring the cover plate temperature, the current of the 7 I / O pins was quickly measured: with the other pins floating, 7 I / O pins without pull-up or pull-down resistors were selected, and a voltage of 0.6V was quickly applied between the pins and ground to measure the pin current of the 7 I / O pins. Based on the measured current of the 7 I / O pins and the plotted curve of the relationship between the current and junction temperature of the 7 I / O pins, the junction temperature of the 7 I / O pins was obtained.

[0052] See Figure 2 In this embodiment, step S2 includes: controlling the junction temperature of each IO pin. averaging the junction temperatures of the semiconductor devices at the clock frequency , according to calculating the thermal resistance of the semiconductor devices at the clock frequency , wherein is the cover temperature, is the device power consumption. In this embodiment, the junction temperatures of the IO pins are averaged to obtain the junction temperature of the semiconductor devices at the clock frequency , and the obtained junction temperature is 43.08℃. The device power consumption is 1.114W, and the cover temperature is 36.6℃. The thermal resistance of the semiconductor devices at the clock frequency is calculated by substituting the above-mentioned values into the above-mentioned formula, and the calculated thermal resistance of the semiconductor devices at the clock frequency is 5.817℃ / W.

[0053] It can be seen that the semiconductor device thermal resistance measurement method of this embodiment can utilize the rectification characteristics of the ESD circuit in the IO interface without up and down pull, calculate the device thermal resistance by measuring the relationship curve between the IO pin current and the junction temperature, and quickly and accurately calculate the device thermal resistance by utilizing the rectification characteristics of the ESD circuit in the IO interface, measuring the relationship curve between the IO pin current and the junction temperature, and combining the measurement of the device power consumption and the cover temperature. The semiconductor device thermal resistance measurement method of this embodiment does not require complex test equipment, is suitable for various semiconductor devices, and has a wide application prospect.

[0054] In addition, this embodiment also provides a semiconductor device thermal resistance measurement system, which comprises a microprocessor and a memory connected to each other. The microprocessor is programmed or configured to execute the semiconductor device thermal resistance measurement method.

[0055] In addition, this embodiment also provides a computer readable storage medium, which stores a computer program or instructions. The computer program or instructions are programmed or configured to execute the semiconductor device thermal resistance measurement method by a processor.

[0056] In addition, this embodiment also provides a computer program product, which comprises a computer program or instructions. The computer program or instructions are programmed or configured to execute the semiconductor device thermal resistance measurement method by a processor.

[0057] The above-mentioned only is the preferred embodiment of the present application, the protection scope of the present application is not only limited to the above-mentioned embodiment, all technical solutions belonging to the idea of the present application are within the protection scope of the present application. It should be noted that, for ordinary skilled in the art, some improvements and decorations without departing from the principle of the present application are also regarded as the protection scope of the present application.

Claims

1. A method of measuring thermal resistance of a semiconductor device, characterized by, The method comprises the following steps: S1, obtaining the junction temperature of the IO pin of the semiconductor device without upper and lower pull resistors in a stable state at the main frequency by measuring the relationship curve between the IO pin current and the junction temperature through the rectification characteristic of the ESD circuit in the IO pin , measuring the cover temperature of the semiconductor device , and measuring the device power consumption ; wherein the IO pin current refers to the current of the diode in the ESD circuit corresponding to the IO pin S2, according to the lid temperature , device power consumption , and the junction temperature of each IO pin when the semiconductor device is in a steady state at the main frequency calculating the thermal resistance of the semiconductor device at the main frequency .

2. The method of claim 1, wherein, Step S1 comprises: S1.1, placing the semiconductor device in a temperature-adjustable environment; S1.2, setting a temperature point of the temperature-adjustable environment; S1.3, determining whether the temperature point is maintained for a specified time length, if not, maintaining the temperature and waiting for the device junction temperature to be the same as the ambient temperature, and jumping to step S1.3 for continuous determination; otherwise, jumping to step S1.4; S1.4, measuring the IO pin current of the N IO pins of the semiconductor device without pull-up and pull-down resistors; S1.5, determining whether the number of set temperature points meets the requirement, if not, changing the temperature point of the temperature-adjustable environment and jumping to step S1.3; otherwise, jumping to step S1.6; S1.6, taking the set temperature point as the junction temperature, and drawing a relationship curve between the IO pin current and the junction temperature; S1.7, maintaining the semiconductor device at the ambient temperature, and making the semiconductor device work at the main frequency; S1.8, determining whether the semiconductor device is in a stable state, if yes, jumping to step S1.9; otherwise, jumping to step S1.8 for continuous determination; S1.9, measuring a cover plate temperature of the semiconductor device and device power consumption ; S1.10, measuring the IO pin current of the N IO pins of the semiconductor device without pull-up and pull-down resistors; S1.11, obtaining the junction temperature of the N IO pins without pull-up and pull-down resistors according to the relationship curve of the IO pin current and the junction temperature .

3. The method of claim 2, wherein the step of measuring the thermal resistance of the semiconductor device is performed by: The specified time length in step S1.3 is 30 minutes.

4. The method of claim 2, wherein the step of measuring the thermal resistance of the semiconductor device is performed by a method comprising: In step S1.5, determining whether the number of set temperature points meets the requirement comprises determining whether the number of set temperature points is greater than or equal to 5, if yes, determining that the number of temperature points meets the requirement, otherwise, determining that the number of temperature points does not meet the requirement.

5. The method of claim 2, wherein, In step S1.2, the temperature point of the temperature-adjustable environment is-55℃, and in step S1.5, the temperature point of the temperature-adjustable environment is changed, and the changed temperature points in different times respectively comprise-15℃, 25℃, 65℃, 105℃ and 125℃.

6. The method of claim 2, wherein, The ambient temperature in step S1.7 is 25℃.

7. The method of claim 1, wherein Step S2 comprises calculating the junction temperature of each IO pin averaging the junction temperatures to obtain the junction temperature of the semiconductor device at the clock frequency , according to calculating the thermal resistance of the semiconductor device at the clock frequency , wherein is the lid temperature, is the device power consumption.

8. A semiconductor device thermal resistance measurement system comprising a microprocessor and a memory interconnected, characterized by, The microprocessor is programmed or configured to execute the semiconductor device thermal resistance measurement method in any one of claims 1-7.

9. A computer-readable storage medium having stored therein a computer program or instructions, characterized in that, The computer program or instructions are programmed or configured to execute the semiconductor device thermal resistance measurement method in any one of claims 1-7 by the processor.

10. A computer program product comprising computer programs or instructions, characterized in that, The computer program or instructions are programmed or configured to execute the semiconductor device thermal resistance measurement method in any one of claims 1-7 by the processor.

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