Test method and device of storage unit and storage medium

By acquiring multiple target working parameter ranges of the storage unit and simulating its operation in multiple jump environments, the accuracy of the existing detection methods is solved, and higher detection accuracy and practical applicability are achieved.

CN120452516APending Publication Date: 2025-08-08合肥康芯威存储技术有限公司
View PDF 6 Cites 0 Cited by

Patent Information

Application Number
CN202510479804.2
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-04-16
Publication Date
2025-08-08

AI Technical Summary

Technical Problem

The existing storage unit detection methods have low accuracy, resulting in inaccurate screening of faulty products, affecting the practical applicability of storage units.

Method used

By acquiring multiple target working parameter ranges of the storage unit, multiple jump environments that simulate driving the storage unit, control the storage unit to perform target operations in these environments, and obtain a first test result to simulate the test in the actual use environment.

Benefits of technology

The detection accuracy of the storage unit is improved, and the inapplicable storage units can be screened based on the test results, thereby improving the applicability of their actual use.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN120452516A_ABST
    Figure CN120452516A_ABST
Patent Text Reader

Abstract

The invention provides a test method and device of a storage unit and a storage medium. The method comprises the following steps: acquiring a plurality of target working parameter ranges; a first simulation environment is determined according to the multiple target working parameter ranges, and the first simulation environment is used for simulating multiple hopping environments for driving the storage unit; and controlling the storage unit to execute a target operation based on the plurality of hopping environments in the first simulation environment to obtain a first test result. According to the scheme, the test of simulating the storage unit in an actual use environment can be realized, so that the detection accuracy of the storage unit is improved, the storage unit can be screened on the basis of the obtained first test result, and the applicability of the storage unit in actual use is further improved.
Need to check novelty before this filing date? Find Prior Art

Description

Technical Field

[0001] The present invention relates to the field of data storage, and in particular to a testing method and device for a storage unit and a storage medium thereof. Background Art

[0002] With the rapid development of technology, device storage performance has become a critical aspect of device performance. This performance is primarily related to the device's storage unit. Therefore, pre-emptive testing of storage units can ensure the device's performance in real-world applications. Current methods for testing storage units can only detect issues that are easily exposed, but cannot prevent product failures. Therefore, improving the accuracy of storage unit testing to enhance its practical suitability has become a pressing issue. Summary of the Invention

[0003] The main technical problem solved by the present invention is that the accuracy of the existing method for detecting storage units is low, which in turn leads to low accuracy in screening faulty products and low applicability of the storage units in actual use.

[0004] According to the first aspect, an embodiment provides a method for testing a storage unit, the method comprising: obtaining multiple target operating parameter ranges; determining a first simulation environment based on the multiple target operating parameter ranges, wherein the first simulation environment is used to simulate multiple jump environments that drive the storage unit; in the first simulation environment, controlling the storage unit to perform a target operation based on the multiple jump environments to obtain a first test result.

[0005] According to the second aspect, an embodiment provides a testing device for a storage unit, the device comprising: an acquisition module for acquiring multiple target operating parameter temperature ranges; a first simulation environment determination module for determining a first simulation environment based on the multiple target operating parameter ranges, wherein the first simulation environment is used to simulate multiple jump environments for driving the storage unit; and a first test module for controlling the storage unit to perform a target operation based on the multiple jump environments in the first simulation environment to obtain a first test result.

[0006] According to a third aspect of an embodiment of the present application, a computer-readable storage medium is provided, on which computer-readable instructions are stored. When the computer-readable instructions are executed by a processor, the testing method of the storage unit as described above is implemented.

[0007] According to a fourth aspect of an embodiment of the present application, an electronic device is provided, comprising: a processor; and a memory, wherein the memory stores computer-readable instructions, and when the computer-readable instructions are executed by the processor, the testing method of the storage unit as described above is implemented.

[0008] According to the test method / device of the storage unit in the above embodiment, since multiple target operating parameter ranges of the storage unit are obtained, the first simulation environment corresponding to the multiple jump environments for simulating driving the storage unit can be determined according to the multiple operating parameter ranges, so that the storage unit can be controlled to perform the target operation according to the multiple jump environments in the first simulation environment to obtain a first test result, so that the test of the storage unit simulation in the actual use environment can be realized, thereby improving the detection accuracy of the storage unit, and then the storage unit can be screened based on the obtained first test result, further improving the applicability of the actual use of the storage unit. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] The accompanying drawings are incorporated into and constitute a part of the specification, illustrate embodiments consistent with the present application, and together with the specification, are used to explain the principles of the present application. Obviously, the drawings described below are only some embodiments of the present application, and those skilled in the art can derive other drawings based on these drawings without inventive effort.

[0010] Figure 1 1 is a flow chart of a method for testing a memory cell according to an embodiment of the present application.

[0011] Figure 2 1 is a flow chart of a method for testing a memory cell according to another embodiment of the present application.

[0012] Figure 3 FIG. 4 is a flow chart of a method for testing a memory cell according to another embodiment of the present application.

[0013] Figure 4 1 is a flow chart of a method for testing a storage unit according to another embodiment of the present application.

[0014] Figure 5 It is a flowchart illustrating the specific steps of step 430 according to an embodiment of the present application.

[0015] Figure 6 4 is a flow chart of a method for testing a memory cell according to yet another embodiment of the present application.

[0016] Figure 7 4 is a block diagram of a memory cell testing device according to an embodiment of the present application.

[0017] Figure 8 It is a hardware structure diagram of an electronic device according to an embodiment of the present application.

[0018] The above drawings have shown specific embodiments of the present invention, which will be described in more detail below. DETAILED DESCRIPTION

[0019] The present invention will be further described in detail below by means of specific embodiments in conjunction with the accompanying drawings. Similar elements in different embodiments are numbered with associated similar elements. In the following embodiments, many detailed descriptions are provided to enable the present application to be better understood. However, those skilled in the art will readily appreciate that some of the features may be omitted in different circumstances, or may be replaced by other elements, materials, or methods. In some cases, some operations related to the present application are not shown or described in the specification. This is to avoid the core portion of the present application being overwhelmed by excessive descriptions, and for those skilled in the art, it is not necessary to describe these related operations in detail. They will fully understand the related operations based on the description in the specification and the general technical knowledge in the art.

[0020] In addition, the features, operations, or characteristics described in the specification may be combined in any appropriate manner to form various embodiments. Furthermore, the steps or actions in the method description may be reordered or adjusted in a manner readily apparent to those skilled in the art. Therefore, the various sequences in the specification and drawings are provided solely for the purpose of clearly describing a particular embodiment and are not intended to be mandatory, unless otherwise specified.

[0021] The serial numbers assigned to components herein, such as "first," "second," etc., are used solely to distinguish the objects being described and do not convey any sequential or technical meaning. References to "connection" and "coupling" herein, unless otherwise specified, include both direct and indirect connections (couplings).

[0022] Currently, storage devices such as embedded multimedia cards (EMMCs) commonly used in electronic devices generally consist of a main controller and flash memory. SRAM (SRAM) is a key component of the main controller chip, serving as the instruction code execution medium (RAM), temporary storage for data, tables, and other data (cache), and also serving as registers for the main controller chip. Therefore, the quality of SRAM directly impacts the proper functioning of embedded applications such as EMMCs, UFSs, and SSDs. However, current SRAM testing can only detect relatively easy-to-obtain issues, failing to prevent product failures before electronic devices leave the factory. Furthermore, conventional testing methods often fail to fully cover the complex operating environments of electronic devices.

[0023] In an embodiment of the present invention, a plurality of target operating parameter ranges of the storage unit are first obtained, so that a first simulation environment corresponding to a plurality of jump environments for simulating driving the storage unit can be determined based on the plurality of operating parameter ranges. Thus, the storage unit can be controlled to perform a target operation based on the plurality of jump environments in the first simulation environment to obtain a first test result, thereby achieving a test of the storage unit simulated in an actual use environment, thereby improving the detection accuracy of the storage unit, and then the storage unit can be screened based on the obtained first test result, further improving the applicability of the storage unit for actual use.

[0024] The block diagrams shown in the accompanying drawings are merely functional entities and do not necessarily correspond to physically separate entities. That is, these functional entities may be implemented in software, in one or more hardware modules or integrated circuits, or in different networks and / or processor devices and / or microcontroller devices. The flowcharts shown in the accompanying drawings are merely illustrative and do not necessarily include all content and operations / steps, nor do they necessarily need to be executed in the order described. For example, some operations / steps may be further decomposed, while others may be combined or partially combined, so the actual execution order may vary depending on the actual situation.

[0025] See also Figure 1 , Figure 1 The present invention provides a method for testing a memory cell according to an embodiment of the present invention. In a specific embodiment, the method for testing a memory cell can be applied to Figure 7 The storage unit test device 600 and the electronic device 700 equipped with the storage unit test device 600 are shown. Figure 8 ). The specific process of this embodiment will be described below. Of course, it is understandable that the method can be executed by a computer terminal with computing and processing capabilities, or other processors, or memory chips. Figure 1 The process shown in FIG. 1 is described in detail. The test method of the storage unit may specifically include the following steps:

[0026] Step 110: Acquire multiple target operating parameter ranges.

[0027] As a way, the performance of the storage unit is mainly related to parameters such as the reading speed, writing speed, storage capacity, data reliability and energy efficiency of the storage unit, and these parameters are related to the working parameters of the storage unit when it is working, for example, the voltage, current and temperature of the storage unit when it is working. Therefore, during the testing phase of the storage unit, the working parameters of the storage unit when it is working can be adjusted to simulate the environment corresponding to when the customer uses the storage unit, so as to test the storage unit in this environment, so that the storage unit can cover most usage scenarios.

[0028] In some embodiments, the target operating parameters include voltage and / or temperature, the multiple voltage ranges are determined by a rated voltage of the memory cell, and the multiple temperature ranges are determined by a rated temperature of the memory cell.

[0029] Optionally, since the storage unit has corresponding operating parameters such as rated voltage, rated current, rated power and rated temperature, and the actual operating parameters of the storage unit may be within a preset range corresponding to the rated voltage, rated current, rated power and rated temperature, multiple voltage ranges can be determined according to the rated voltage of the storage unit and multiple temperature ranges can be determined according to the rated temperature of the storage unit.

[0030] Step 120 : determining a first simulation environment according to the multiple target operating parameter ranges, wherein the first simulation environment is used to simulate multiple transition environments for driving the storage unit.

[0031] As one approach, after obtaining a plurality of target operating parameter ranges, the operating parameters of the storage units may be respectively set to specific parameter values corresponding to the corresponding target operating parameter ranges, thereby determining the first simulation environment.

[0032] Optionally, after obtaining multiple target operating parameter ranges for the storage unit, multiple transition environments for simulating driving the storage unit to operate can be set based on the multiple target operating parameter ranges. In the transition environments, the difference in parameter ranges corresponding to different target operating parameters is greater than a preset value, so that the first simulation environment can be simulated. For example, when the target operating parameter is voltage, in the first simulation environment, the voltage difference between the first transition environment and the second transition environment is greater than a preset voltage difference, where the preset voltage difference is a pre-set difference value used to determine the corresponding transition voltage.

[0033] Optionally, in order to better test the memory cell in the first simulation environment, multiple transition environments may be determined based on multiple stepped voltage / temperature levels. Optionally, a transition environment may be determined by combining at least two stepped voltage / temperature levels into one voltage / temperature level.

[0034] Step 130 : Control the storage unit to perform a target operation based on the multiple transition environments in the first simulation environment to obtain a first test result.

[0035] As a method, after determining the first simulation environment, the storage unit can be controlled to perform read operations, write operations, and continuous read and write operations through multiple jump environments in the first simulation environment, so as to test whether the storage unit can normally perform the target operation in multiple jump environments, thereby obtaining the first test result.

[0036] Optionally, the first test result includes whether the storage unit can perform the target operation normally in the first simulation environment or cannot perform the target operation normally. If the first test result indicates that the storage unit can perform the target operation normally in the first simulation environment, it is determined that the storage unit can work normally in the jump environment; if the first test result indicates that the storage unit cannot perform the target operation normally in the first simulation environment, it is determined that the storage unit has failed the test and cannot be applied online, and the storage unit needs to be redesigned to ensure that the storage unit can perform the target operation normally in the jump environment.

[0037] Optionally, in order to further ensure the test accuracy of the storage unit, if the first test result indicates that the storage unit can work normally in the first simulation environment, it is determined whether the data written to the storage unit in the first simulation environment is the same as the data read (when no data is written, there is no other data in the storage unit). If it is determined that they are the same, it is determined that the storage unit has passed the jump environment test; if it is determined that they are not the same, it is determined that the storage unit has failed the test.

[0038] In an embodiment of the present application, multiple target operating parameter ranges of the storage unit are first obtained, so that a first simulation environment corresponding to multiple jump environments for simulating driving the storage unit can be determined based on the multiple operating parameter ranges, so that the storage unit can be controlled to perform a target operation according to the multiple jump environments in the first simulation environment to obtain a first test result. The solution of the present application can realize the test of the storage unit simulation in the actual use environment, thereby improving the detection accuracy of the storage unit, and then the storage unit can be screened based on the obtained first test result, further improving the applicability of the actual use of the storage unit.

[0039] See also Figure 2 , Figure 2 The test method of the memory cell provided by an embodiment of the present application is shown below. Figure 2 The process shown in FIG. 1 is described in detail. The test method of the storage unit may specifically include the following steps:

[0040] Step 210: Acquire multiple target operating parameter ranges.

[0041] Step 220: Determine at least one transition temperature range according to the multiple temperature ranges, and determine at least one transition temperature range according to the voltage range.

[0042] As a method, after obtaining multiple temperature ranges, at least two temperature ranges can be merged to obtain at least one transition temperature range, and after obtaining multiple voltage ranges, at least two voltage ranges can be merged to obtain at least one transition voltage range.

[0043] Optionally, in multiple transition temperature ranges, the temperature difference corresponding to the extreme temperature corresponding to each transition temperature range is greater than the temperature difference threshold, thereby determining the corresponding temperature transition environment based on each transition temperature range. Similarly, in multiple transition voltage ranges, the voltage difference corresponding to the extreme voltage corresponding to each transition voltage range is greater than the voltage difference threshold, thereby determining the corresponding voltage transition environment based on each transition voltage range.

[0044] Step 230 : determining a voltage transition environment of the memory cell according to a limit temperature corresponding to the at least one transition temperature range, and determining a temperature transition environment of the memory cell according to a limit voltage determined by the at least one transition voltage.

[0045] As a method, in a voltage jump environment, the operating voltage of the device may drop or jump due to various reasons (such as power on, power off, etc.). Therefore, in order to accurately simulate the voltage drop or jump during the operation of the storage unit, the voltage jump environment of the storage unit can be determined based on the limit voltage corresponding to at least one jump voltage range. For example, if a jump voltage range is (1.2-7.2), the voltage jump environment of the storage unit can be determined as the operating voltage of the storage unit switching between 1.2 and 7.2, thereby obtaining the voltage jump environment. Similarly, in a temperature jump environment, the operating temperature of the device may drop or jump due to various reasons (such as the device processing multiple threads simultaneously). Therefore, in order to accurately simulate the temperature drop or jump during the operation of the storage unit, the temperature jump environment of the storage unit can be determined based on the limit temperature corresponding to at least one jump temperature range.

[0046] Step 240: Control the storage unit to perform a target operation based on the multiple transition environments in the first simulation environment to obtain a first test result.

[0047] The specific step descriptions of step 210 and step 240 can refer to step 110 and step 130, which will not be repeated here.

[0048] In this embodiment, at least one transition temperature range is determined based on the multiple temperature ranges obtained, and then the temperature transition environment of the storage unit can be determined based on the extreme temperature corresponding to the at least one transition temperature range. At least one transition voltage range is determined based on the multiple voltage ranges obtained, and then the voltage transition environment of the storage unit can be determined based on the extreme voltage corresponding to the at least one transition voltage range. Then, the storage unit can be tested in the voltage transition environment and / or the temperature transition environment, thereby simulating the use of the storage unit in an extreme environment and further ensuring the accuracy of the storage unit.

[0049] See also Figure 3 , Figure 3 The test method of the memory cell provided by an embodiment of the present application is shown below. Figure 3 The process shown in FIG. 1 is described in detail. The test method of the storage unit may specifically include the following steps:

[0050] Step 310: Acquire multiple target operating parameter ranges.

[0051] The specific step description of step 310 can refer to step 110 and will not be repeated here.

[0052] Step 320: Determine a plurality of polling test voltages according to the plurality of voltage ranges, and determine a plurality of polling test temperatures according to the plurality of temperature ranges.

[0053] As a way to further ensure the availability of the storage unit, it is also possible to simulate the environment in which the storage unit operates normally within the target operating parameter range to determine whether the storage unit can operate normally. Optionally, the storage unit can only perform the corresponding target operation within the rated voltage or rated range. Therefore, a stepped polling test voltage can be determined based on multiple voltage ranges of the storage unit, so that the storage unit can be tested according to multiple polling test voltages, or a stepped polling test temperature can be determined based on multiple temperature ranges of the storage unit, so that the storage unit can be tested according to multiple polling test temperatures.

[0054] Optionally, multiple polling test voltages / multiple polling test temperatures can be an arithmetic progression or a geometric progression. Appropriate voltage values / temperature values can be selected from multiple voltage ranges / multiple temperature ranges so that the obtained multiple voltage values / temperature values form an arithmetic progression or a geometric progression, thereby obtaining multiple polling test voltages / temperatures.

[0055] Step 330 : Perform voltage tests on the storage units in sequence according to the multiple polling test voltages to obtain voltage test results.

[0056] As a method, after obtaining multiple polling test voltages, the operating voltage of the memory cell can be set according to the multiple polling test voltages, so that the memory cell performs the target operation under the corresponding multiple polling test voltages, thereby realizing voltage testing of the memory cell.

[0057] Optionally, the voltage test result includes whether the storage unit can normally perform the target operation under multiple polling test voltages and whether the storage unit cannot normally perform the target operation under certain polling test voltages. Optionally, to further ensure the accuracy of the voltage test of the storage power supply, when determining that the storage unit can normally perform the target operation under multiple polling test voltages, it is determined whether the data written and read by the storage power supply at the same polling test voltage are the same. If they are the same, it is determined that the storage unit has passed the voltage test; if they are different, it is determined that the storage unit has failed the voltage test.

[0058] Step 340 : performing temperature tests on the storage units in sequence according to the multiple polling test temperatures to obtain temperature test results.

[0059] As a method, after obtaining multiple polling test temperatures, the operating temperature of the storage unit can be set according to the multiple polling test temperatures, so that the storage unit performs target operations at the corresponding multiple polling test temperatures, thereby realizing temperature testing of the storage unit.

[0060] Optionally, the temperature test result includes whether the storage unit can normally perform the target operation at multiple polling test temperatures and whether the storage unit cannot normally perform the target operation at certain polling test temperatures. Optionally, to further ensure the accuracy of the temperature test of the storage power supply, when determining that the storage unit can normally perform the target operation at multiple polling test temperatures, it is determined whether the data written by the storage power supply is the same as the data read at the same polling test temperature. If they are the same, the storage unit is determined to have passed the temperature test; if they are different, the storage unit is determined to have failed the temperature test.

[0061] In this embodiment, by determining multiple polling test voltages based on multiple voltage ranges and determining multiple polling test temperatures based on multiple temperature ranges, the storage unit can be voltage tested according to the multiple polling test voltages, and the storage unit can be temperature tested according to the multiple polling test temperatures, thereby ensuring that the storage unit can simulate the operation in a step-type environment, enriching the test environment, and further improving the test accuracy of the storage unit.

[0062] See also Figure 4 , Figure 4 The test method of the memory cell provided by an embodiment of the present application is shown below. Figure 4The process shown in FIG. 1 is described in detail. The test method of the storage unit may specifically include the following steps:

[0063] Step 410: Acquire multiple target operating parameter ranges.

[0064] The specific step description of step 410 can refer to step 110 and will not be repeated here.

[0065] Step 420 : Determine a second simulation environment based on the multiple temperature ranges and the multiple voltage ranges, wherein the second simulation environment is used to simulate an environment in which the memory cell performs the first target operation and the second target operation under different conditions.

[0066] As a way, in order to ensure that the storage unit can continue to operate normally when the user uses the storage unit normally, after obtaining multiple temperature ranges and multiple voltage ranges, a second simulation environment can be determined based on the multiple temperature ranges and multiple voltage ranges to simulate the continuous changes in the voltage and temperature of the storage unit when the user uses the storage unit.

[0067] Optionally, in the second simulation environment, different operations may be performed under different temperature conditions and different voltage conditions, thereby performing the first target operation and the second target operation under different conditions to test the memory cell. Optionally, the first target operation and the second target operation complete the memory cell to complete the continuous read and write operations.

[0068] Step 430: Test the storage unit in the second simulation environment to obtain a second test result.

[0069] As a method, after the second simulation environment is determined, the first target operation is performed at the first temperature and second voltage in the second simulation environment, and the second target operation is performed at the second temperature and second voltage in the second simulation environment, so as to test the storage unit in the second simulation environment.

[0070] Optionally, the second test result includes that the storage unit can perform the first target operation and the second target operation under different conditions in the second environment and that the storage unit cannot perform the first target operation and / or the second target operation under different conditions in the second environment.

[0071] In some embodiments, as Figure 5 As shown, step 430 includes:

[0072] Step 431 : determining a first conditional environment based on the second simulation environment, and controlling the storage unit to perform a first target operation in the first conditional environment to obtain target data.

[0073] As a method, in order to ensure that the second test result can be accurately obtained, the first conditional environment can be first determined based on the second simulation environment. The first conditional environment can be a low-temperature, low-voltage environment determined based on multiple temperature ranges and multiple voltage ranges, so that the storage unit can be controlled to perform the first target operation in the low-temperature, low-voltage environment. Optionally, the low-temperature, low-voltage environment can refer to an environment with relatively small temperature and voltage values corresponding to the temperature range and voltage range that support the normal operation of the storage device.

[0074] Optionally, the first target operation can be a read operation or a write operation, and the first target operation can be set according to actual needs. Regardless of whether it is a read operation or a write operation, the corresponding data can be obtained after the storage unit performs the corresponding operation.

[0075] Step 432: determine a second conditional environment based on the second simulation environment, and control the storage unit to perform a second target operation in the second conditional environment to obtain reference data, wherein the first conditional environment has a different temperature range and / or voltage range from the first conditional environment.

[0076] As a method, in order to accurately simulate the situation where the environment of the storage device is constantly changing while the user is using the storage unit, a second conditional environment different from the first conditional environment can be determined through a second simulation environment. The second conditional environment can be a high-temperature and high-voltage environment determined based on multiple temperature ranges and multiple voltage ranges, so that the storage unit can be controlled to perform the second target operation in the high-temperature and high-voltage environment. Optionally, the high-temperature and high-voltage environment can refer to an environment with a larger temperature value and voltage value corresponding to the temperature range and voltage range that support the normal operation of the storage device, and the temperature range and / or voltage range corresponding to the second conditional environment are different from those of the first conditional environment.

[0077] Optionally, the second target operation is a target operation different from the first target operation. If the first target operation is a read operation, the second target operation is a write operation; if the first target operation is a write operation, the second target operation is a read operation. The order in which the first target operation and the second target operation are executed is related to the type of target operation, i.e., write first and then read, and is independent of the first and second conditional environments. The first and second target operations constitute a complete read and write operation of the storage unit, thereby ensuring the accuracy of the test of the storage unit.

[0078] In other embodiments, the storage unit can be controlled to perform the first target operation under the second condition environment and the storage unit can be controlled to perform the second target operation under the first condition environment, ensuring that the first target operation and the second target operation are completed under different condition environments, thereby ensuring the test accuracy of the storage unit.

[0079] Step 433: Determine the second test result according to the target data and the reference data.

[0080] As a way, in order to test whether the storage unit can work normally in the simulated second simulation environment, the target data after executing the first target operation and the reference data after executing the second target operation can be compared to determine the second test result of the storage unit, and then it can be determined based on the second test result whether the storage unit can perform the corresponding target operation under different conditions in the second simulation environment.

[0081] In some embodiments, step 433 includes: determining whether the target data is the same as the reference data; if they are the same, determining that the second test result indicates that the storage unit has passed the test; if they are not the same, determining that the second test result indicates that the storage unit has failed the test.

[0082] As a method, in order to determine the second test result of the storage unit, the data written to the storage unit in the second simulation environment can be compared with the data read in the second simulation environment to determine whether the target data is the same as the reference data to determine the second test result.

[0083] Alternatively, if the target data and the reference data differ, it is determined that a fault occurred during the read operation of the storage unit in the second environment, resulting in the read data being different from the written data, and the storage unit may be determined to have failed the test. If the target data and the reference data are the same, it is determined that no fault occurred during the write and read operations of the storage unit in the second environment, resulting in the read data being the same as the written data, and the storage unit may be determined to have passed the test.

[0084] In this embodiment, the second simulation environment is determined based on multiple temperature ranges and multiple voltage ranges, so that the changing environment of the simulation storage unit during actual use can be realized by controlling the storage unit to perform the first target operation under the first condition environment of the second simulation environment and controlling the storage unit to perform the second target operation under the second condition environment, thereby enriching the test environment and further improving the test accuracy of the storage unit.

[0085] See also Figure 6 , Figure 6 The test method of the memory cell provided by an embodiment of the present application is shown below. Figure 6 The process shown in FIG. 1 is described in detail. The test method of the storage unit may specifically include the following steps:

[0086] Step 510: If it is determined that the storage unit fails the test, determine the target simulation environment of the storage unit that fails the test.

[0087] As one approach, when a memory cell is determined to have failed a test, it can be determined that the memory cell will malfunction during actual use. To ensure the subsequent practicality of the memory cell, the target simulation environment in which the memory cell failed the test is determined when the test is determined to have failed, so that improvements can be made to the memory cell based on the target simulation environment. Optionally, the target simulation environment can specifically include the voltage environment and / or temperature environment in which the memory cell failed the test.

[0088] Step 520: Generate prompt information according to the target simulation environment, and provide design prompts for the storage unit based on the prompt information.

[0089] As a method, after determining the target simulation environment, prompt information can be generated based on the specific voltage value and / or temperature value, voltage range and temperature range corresponding to the target simulation environment, and the prompt information indicates that the storage unit has failed the test at a specific temperature and / or voltage.

[0090] Optionally, the prompt information may also include specific test results of the storage unit failing the test. For example, if the storage unit fails the test in the second simulation environment, the prompt information includes, in addition to specific voltage values and temperature values, specific fault types (read fault, write fault, the read data is different from the written data, and the storage unit cannot work normally, etc.). In this way, the prompt information can be sent to the test equipment to which the storage unit communicates, and then the developer can improve the storage unit by viewing the prompt information in the test equipment.

[0091] In this embodiment, when it is determined that the storage unit has failed the test, the target simulation environment in which the storage unit has failed the test is determined, so that prompt information can be generated according to the target simulation environment, and design prompts can be given to the storage unit according to the prompt information, so that developers can improve the storage unit based on the design prompts, thereby further improving the development efficiency of the storage unit.

[0092] Figure 7 FIG. 1 is a block diagram of a storage unit test device according to an embodiment of the present application. Figure 7 As shown, the storage unit testing device 600 includes: an acquisition module 610 , a first simulation environment determination module 620 and a first testing module 630 .

[0093] An acquisition module 610 is used to obtain multiple target operating parameter temperature ranges; a first simulation environment determination module 620 is used to determine a first simulation environment based on the multiple target operating parameter ranges, wherein the first simulation environment is used to simulate multiple transition environments that drive the storage unit; and a first test module 630 is used to control the storage unit to perform a target operation based on the multiple transition environments in the first simulation environment to obtain a first test result.

[0094] In some embodiments, the target operating parameters include voltage and / or temperature, the multiple voltage ranges are determined by a rated voltage of the memory cell, and the multiple temperature ranges are determined by a rated temperature of the memory cell.

[0095] In some embodiments, the first simulation environment determination module 620 includes: a first determination submodule, used to determine at least one jump temperature range based on the multiple temperature ranges, and to determine at least one jump temperature range based on the multiple voltage ranges; a second determination submodule, used to determine the voltage jump environment of the storage unit based on the extreme temperature corresponding to the at least one jump temperature range, and to determine the temperature jump environment of the storage unit based on the extreme voltage determined by the at least one jump voltage.

[0096] In some embodiments, the storage unit testing device 600 further includes: a voltage / temperature determination module, used to determine multiple polling test voltages based on the multiple voltage ranges, and to determine multiple polling test temperatures based on the multiple temperature ranges; a voltage testing module, used to perform voltage tests on the storage unit in sequence according to the multiple polling test voltages to obtain voltage test results; and a temperature testing module, used to perform temperature tests on the storage unit in sequence according to the multiple polling test temperatures to obtain temperature test results.

[0097] In some embodiments, the testing device 600 for the storage unit further includes: a second simulation environment determination module, used to determine a second simulation environment based on the multiple temperature ranges and the multiple voltage ranges, wherein the second simulation environment is used to simulate the environment in which the storage unit performs the first target operation and the second target operation under different conditions; and a second testing module, used to test the storage unit in the second simulation environment to obtain a second test result.

[0098] In some embodiments, the second test module includes: a first control submodule, used to determine a first conditional environment based on the second simulation environment, and control the storage unit to perform a first target operation in the first conditional environment to obtain target data; a second control submodule, used to determine a second conditional environment based on the second simulation environment, and control the storage unit to perform a second target operation in the second conditional environment to obtain reference data, wherein the first conditional environment has a different temperature range and / or voltage range corresponding to the first conditional environment; a test result determination submodule, used to determine the second test result based on the target data and the reference data.

[0099] In some embodiments, the test result determination submodule includes: a judgment unit for determining whether the target data is the same as the reference data; a first determination unit for determining that the second test result indicates that the storage unit has passed the test if they are the same; and a second determination unit for determining that the second test result indicates that the storage unit has failed the test if they are not the same.

[0100] In some embodiments, the testing device 600 of the storage unit also includes: a target simulation environment determination module, which is used to determine the target simulation environment of the storage unit that failed the test if it is determined that the storage unit fails the test; and a prompt module, which is used to generate prompt information according to the target simulation environment, and provide design prompts to the storage unit based on the prompt information.

[0101] According to one aspect of the embodiments of the present application, an electronic device is also provided, such as Figure 8 As shown, the electronic device 700 includes a processor 710 and one or more memories 720. The one or more memories 720 are used to store program instructions executed by the processor 710. When the processor 710 executes the program instructions, the above-mentioned storage unit testing method is implemented.

[0102] Furthermore, the processor 710 may include one or more processing cores. The processor 710 runs or executes instructions, programs, code sets or instruction sets stored in the memory 720, and calls data stored in the memory 720. Optionally, the processor 710 can be implemented in at least one hardware form of digital signal processing (DSP), field-programmable gate array (FPGA), and programmable logic array (PLA). The processor 710 can integrate one or a combination of a central processing unit (CPU), a graphics processing unit (GPU), and a modem. Among them, the CPU mainly processes the operating system, user interface, and application programs; the GPU is responsible for rendering and drawing display content; and the modem is used to handle wireless communications. It is understandable that the above-mentioned modem may not be integrated into the processor and may be implemented separately through a communication chip.

[0103] According to one aspect of the present application, a computer-readable storage medium is provided. The computer-readable storage medium may be included in the electronic device described in the above embodiments, or may exist independently without being incorporated into the electronic device. The computer-readable storage medium carries computer-readable instructions. When the computer-readable storage instructions are executed by a processor, the method of any of the above embodiments is implemented.

[0104] It should be noted that the computer-readable medium shown in the embodiments of the present application can be a computer-readable signal medium or a computer-readable storage medium or any combination of the above two. The computer-readable storage medium can be, for example, but not limited to, an electrical, magnetic, optical, electromagnetic, infrared, or semiconductor system, device or device, or any combination of the above. More specific examples of computer-readable storage media can include, but are not limited to: an electrical connection with one or more wires, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM), a flash memory, an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the above. In the present application, a computer-readable storage medium can be any tangible medium containing or storing a program that can be used by or in combination with an instruction execution system, device or device. In the present application, a computer-readable signal medium can include a data signal propagated in baseband or as part of a carrier wave, which carries a computer-readable program code. Such propagated data signals may take various forms, including but not limited to electromagnetic signals, optical signals, or any suitable combination thereof. A computer-readable signal medium may also be any computer-readable medium other than a computer-readable storage medium that can transmit, propagate, or transport a program for use by or in connection with an instruction execution system, apparatus, or device. Program code embodied on a computer-readable medium may be transmitted using any suitable medium, including but not limited to wireless, wired, or any suitable combination thereof.

[0105] The units involved in the embodiments described in this application may be implemented by software or hardware, and the units described may also be set in a processor. In some cases, the names of these units do not constitute limitations on the units themselves.

[0106] The above examples are used to illustrate the present invention, which are only used to help understand the present invention and are not intended to limit the present invention. Those skilled in the art can make several simple deductions, modifications or substitutions based on the concept of the present invention.

Claims

1. A method for testing a memory cell, characterized in that: The method comprises: Obtain multiple target operating parameter ranges; determining a first simulation environment according to the multiple target operating parameter ranges, wherein the first simulation environment is used to simulate multiple transition environments of driving the storage unit; In the first simulation environment, the storage unit is controlled to perform a target operation based on the multiple transition environments to obtain a first test result.

2. The method according to claim 1, characterized in that The target operating parameters include voltage and / or temperature. The multiple voltage ranges are determined by the rated voltage of the memory cell, and the multiple temperature ranges are determined by the rated temperature of the memory cell.

3. The method according to claim 2, characterized in that Determining a first simulation environment according to the multiple target operating parameter ranges includes: determining at least one transition temperature range based on the plurality of temperature ranges, and determining at least one transition temperature range based on the plurality of voltage ranges; The voltage jump environment of the storage unit is determined according to the limit temperature corresponding to the at least one jump temperature range, and the temperature jump environment of the storage unit is determined according to the limit voltage determined by the at least one jump voltage.

4. The method according to claim 2, characterized in that After obtaining the plurality of target operating parameter temperature ranges, the method further includes: determining a plurality of polling test voltages according to the plurality of voltage ranges, and determining a plurality of polling test temperatures according to the plurality of temperature ranges; Performing voltage tests on the storage units in sequence according to the multiple polling test voltages to obtain voltage test results; Temperature tests are performed on the storage units in sequence according to the multiple polling test temperatures to obtain temperature test results.

5. The method according to claim 1, wherein After obtaining the plurality of target operating parameter temperature ranges, the method further includes: determining a second simulation environment according to the multiple temperature ranges and the multiple voltage ranges, wherein the second simulation environment is used to simulate an environment in which the memory unit performs the first target operation and the second target operation under different conditions; The storage unit is tested in the second simulation environment to obtain a second test result.

6. The method according to claim 5, characterized in that The testing of the storage unit in the second simulation environment to obtain a second test result includes: Determine a first conditional environment based on the second simulation environment, and control the storage unit to perform a first target operation in the first conditional environment to obtain target data; determining a second conditional environment based on the second simulation environment, and controlling the storage unit to perform a second target operation in the second conditional environment to obtain reference data, wherein the first conditional environment and the first conditional environment have a different temperature range and / or voltage range; The second test result is determined according to the storage unit target data and the reference data.

7. The method according to claim 6, characterized in that The determining the second test result according to the target data and the reference data includes: determining whether the target data is identical to the reference data; If they are the same, determining that the second test result indicates that the storage unit has passed the test; If not, it is determined that the second test result indicates that the memory cell has failed the test.

8. The method according to any one of claims 1 to 7, characterized in that The method further comprises: If it is determined that the storage unit fails the test, determining a target simulation environment of the storage unit that fails the test; Prompt information is generated according to the target simulation environment, and design prompts are provided to the storage unit based on the prompt information.

9. A memory cell testing device, characterized in that: The device comprises: An acquisition module, used to obtain multiple target operating parameter temperature ranges; a first simulation environment determining module, configured to determine a first simulation environment according to the plurality of target operating parameter ranges, wherein the first simulation environment is used to simulate a plurality of transition environments for driving the storage unit; The first test module is configured to control the storage unit to perform a target operation based on the multiple transition environments in the first simulation environment to obtain a first test result.

10. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores program code, which can be called by a processor to execute the method according to any one of claims 1 to 8.

Citation Information

Patent Citations

  • Test method and device

    CN109461469A

  • Dynamic test method and device of flash memory Nand Flash, electronic equipment and storage medium

    CN111816240A

  • EMMC four-corner test method and device, readable storage medium and electronic equipment

    CN117935893A

  • Chip testing method and chip testing system

    CN118519843A

  • Solid state disk testing method and device, computer equipment and storage medium

    CN119724323A