Thin-film resistor and manufacturing method thereof

Abstract

The invention provides a thin-film resistor and a manufacturing method thereof. The thin-film resistor comprises a substrate with a plurality of grooves, a first terminal electrode, a second terminal electrode, a resistance layer, an electrostatic protection layer and an electrostatic electrode layer arranged on the resistance layer. The first terminal electrode and the second terminal electrode are respectively arranged on two end parts of the upper surface of the substrate. The resistive layer and the electrostatic protection layer are arranged on the upper surface of the substrate, the electrostatic protection layer is arranged to be adjacent to one side of the resistive layer, the electrostatic protection layer comprises a first part and a second part which are separated from each other, and at least one of the first part and the second part is provided with a tip part. Therefore, static electricity can be prevented from flowing into the resistive layer, and moisture is prevented from permeating into the thin-film resistor.

Description

Technical Field

[0001] The present invention relates to a thin film resistor and a manufacturing method thereof, and in particular to a moisture-resistant and electrostatic discharge-resistant thin film resistor and a manufacturing method thereof. Background Art

[0002] Existing thin-film chip resistors include a protective layer made of epoxy resin to protect the resistor layer. However, epoxy resin only provides a basic barrier to moisture penetration and cannot completely block moisture intrusion. Therefore, due to the risk of electrical failure, existing thin-film chip resistors cannot be used in high-humidity environments or high-reliability electronic devices.

[0003] The Human Body Model (HBM) ESD rating of existing thin-film chip resistors is approximately 2kV. Generally, to meet higher ESD requirements, the thickness of the resistor layer or the width of the resistor pattern can be increased. However, these approaches result in a decrease in resistance, making them incapable of meeting the high resistance requirement.

[0004] In view of this, there is an urgent need to provide a thin film resistor and a manufacturing method thereof to prevent static electricity from flowing into the resistor layer and to block moisture from penetrating into the thin film resistor. Summary of the Invention

[0005] One aspect of the present invention is to provide a thin film resistor comprising an electrostatic protection layer and an electrostatic electrode layer to prevent static electricity from flowing into the resistor layer and to block moisture from penetrating into the resistor layer.

[0006] Another aspect of the present invention is to provide a method for manufacturing a thin film resistor, which simultaneously sets an electrostatic protection layer and a resistor layer, and sets an electrostatic electrode layer on the resistor layer to block moisture and allow static electricity to discharge in the electrostatic protection layer.

[0007] According to one aspect of the present invention, a thin film resistor is provided. The thin film resistor includes a substrate; a first terminal electrode disposed on one of two end portions of an upper surface of the substrate, wherein the two end portions are located at opposite ends of the substrate in a first direction; a second terminal electrode disposed on the other of the two end portions of the upper surface of the substrate; a resistor layer disposed on the upper surface of the substrate and between the first terminal electrode and the second terminal electrode; at least one electrostatic shielding layer disposed on the upper surface of the substrate, wherein one of the electrostatic shielding layers is on one side of the resistor layer, the electrostatic shielding layer including a first portion and a second portion, the first portion and the second portion being separated in the X direction, and at least one of the first portion and the second portion having a tip portion; and an electrostatic electrode layer disposed on the resistor layer.

[0008] According to an embodiment of the present invention, the first portion of the electrostatic protection layer has a first tip portion, the second portion has a second tip portion, and the first tip portion faces the second tip portion.

[0009] According to an embodiment of the present invention, the first portion of the electrostatic protection layer has a pointed portion, and the second portion has a concave corner portion, the concave corner portion faces the pointed portion, and the concave corner portion is complementary to the pointed portion.

[0010] According to an embodiment of the present invention, the width of the electrostatic protection layer along the Y direction is 7 μm to 50 μm, and the Y direction is perpendicular to the X direction.

[0011] According to an embodiment of the present invention, the distance between the first portion and the second portion of the electrostatic protection layer in the X direction is 5 μm to 30 μm.

[0012] According to an embodiment of the present invention, the angle between the acute-angled boundary of the tip portion of the electrostatic protection layer and the horizontal line is 15° to 45°.

[0013] According to an embodiment of the present invention, the electrostatic electrode layer includes a first electrode portion and a second electrode portion. The first electrode portion and the second electrode portion are separated by a distance in the X direction, and the distance is 10 μm to 150 μm.

[0014] According to an embodiment of the present invention, the width of the electrostatic electrode layer along the Y direction is 2 / 5 to 9 / 10 times the width of the substrate.

[0015] According to an embodiment of the present invention, the first electrode portion of the electrostatic electrode layer comprises a pointed electrode, and the angle between the acute angle boundary of the pointed electrode and the horizontal line is 30° to 90°.

[0016] According to another aspect of the present invention, a method for manufacturing a thin-film resistor is provided. The method includes providing a substrate; forming a first electrode pair at two ends of the substrate, wherein the two ends are located at opposite ends of the substrate in the X direction; forming a resistor layer on the substrate; forming at least one electrostatic protection layer on the substrate, wherein one of the electrostatic protection layers is disposed on one side of the resistor layer, the electrostatic protection layer comprising a first portion and a second portion, the first portion and the second portion being separated in the X direction, and at least one of the first portion and the second portion having a pointed portion; and forming an electrostatic electrode layer on the resistor layer and the electrostatic protection layer.

[0017] The thin film resistor and the manufacturing method thereof of the present invention can prevent static electricity from flowing into the resistor layer and block water vapor penetration by disposing the static protection layer and the static electrode layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The following detailed description, when read in conjunction with the accompanying drawings, will provide a better understanding of the aspects of this disclosure. It should be noted that, as is standard practice in the industry, many features are not drawn to scale. In fact, for clarity of discussion, the dimensions of many features may be arbitrarily scaled.

[0019] Figure 1 FIG2 is a schematic perspective view of a thin film resistor according to some embodiments of the present invention.

[0020] Figure 2A To draw along Figure 1 Section view along line AA.

[0021] Figure 2B To draw along Figure 1 Section view along line BB in FIG.

[0022] Figure 2C FIG. 1 is a top view of a thin film resistor according to some embodiments of the present invention.

[0023] Figure 3A and Figure 3B Schematic diagrams illustrating partial patterns of an electrostatic protection layer according to some embodiments of the present invention are respectively shown.

[0024] Figure 4 FIG. 1 is a partial top view of a thin film resistor according to some embodiments of the present invention.

[0025] Figure 5 Schematic diagram illustrating a local pattern of an electrostatic electrode layer according to some embodiments of the present invention.

[0026] Figures 6A to 6C FIG2 is a top view illustrating an intermediate stage of the manufacturing process of a thin film resistor according to some embodiments of the present invention. DETAILED DESCRIPTION

[0027] The following disclosure provides many different embodiments or illustrations for implementing different features of the invention. The specific examples of components and configurations described below are intended to simplify the disclosure. These are of course only examples and are not intended to be limiting. For example, a description of a first feature being formed on or above a second feature includes embodiments in which the first feature and the second feature are in direct contact, and also includes embodiments in which other features are formed between the first feature and the second feature so that the first feature and the second feature are not in direct contact. In addition, the present disclosure repeats component symbols and / or letters in various specific examples. The purpose of this repetition is to simplify and clarify the description and does not indicate a relationship between the various discussed embodiments and / or configurations.

[0028] Furthermore, spatially relative terms such as "beneath," "below," "lower," "above," and "upper" are used to facilitate describing the relationships of components or features to other components or features depicted in the drawings. Spatially relative terms encompass different orientations of the component in use or operation in addition to the orientation depicted in the drawings. The device may be otherwise oriented (rotated 90 degrees or at other orientations), and the spatially relative descriptors used herein may be interpreted accordingly.

[0029] As used herein, “around,” “about,” “approximately,” or “substantially” generally means within 20 percent, or within 10 percent, or within 5 percent of the stated value or range.

[0030] As described above, the present invention provides a thin-film resistor and its manufacturing method. These utilize a patterned electrostatic shielding layer to create a high voltage differential and the low dielectric constant of epoxy resin to direct static discharge directly onto the shielding layer, preventing static electricity from flowing into the resistor layer. Furthermore, the provision of an electrostatic electrode layer prevents moisture penetration.

[0031] See also Figure 1 , which is a schematic perspective view of a thin film resistor 100 according to some embodiments of the present invention. Thin film resistor 100 includes a substrate 110, a first terminal electrode 120A, and a second terminal electrode 120B, wherein first terminal electrode 120A and second terminal electrode 120B are respectively disposed on opposite ends of substrate 110. In some embodiments, substrate 110 may be made of aluminum oxide, aluminum nitride, ceramic glass, or the like. In some embodiments, first terminal electrode 120A and second terminal electrode 120B may be formed of glass, silver, an electrode paste mixed with silver and palladium, or copper.

[0032] Figure 2A To draw along Figure 1 The cross-sectional view of line AA in Figure 2B To draw along Figure 1 Section view along line BB in . Figure 2A and Figure 2B The thin film resistor 100 includes a resistor layer 130, wherein the resistor layer 130 is disposed on the upper surface 110A of the substrate 110. The resistor layer 130 is located between the first terminal electrode 120A and the second terminal electrode 120B. In some embodiments, as Figure 2AAs shown, the resistor layer 130 is partially disposed on portions of the first terminal electrode 120A and the second terminal electrode 120B. In some embodiments, the material of the resistor layer 130 may include, but is not limited to, nickel-chromium (NiCr), copper-nickel (CuNi), nickel-chromium-silicon (NiCrSi), nickel-chromium-aluminum (NiCrAl), nickel-chromium-aluminum-silicon (NiCrAlSi), nickel-chromium-aluminum-yttrium (NiCrAlY), nickel-chromium-tantalum-molybdenum (NiCrTaMo), tantalum nitride (TaN), copper-manganese-tin (CuMnSn), copper-manganese-nickel (CuMnNi), gold, or other suitable resistor materials.

[0033] The thin film resistor 100 includes an electrostatic protection layer 135, wherein the electrostatic protection layer 135 is disposed on the upper surface 110A of the substrate 110. Figure 2B As shown. The electrostatic protection layer 135 is arranged parallel to one side of the resistance layer 130. Figure 2C , which is a top view of a thin film resistor 100 according to some embodiments of the present invention. When the thin film resistor 100 includes two electrostatic protection layers 135, they can be respectively disposed on the upper and lower sides of the resistor layer 130, such as Figure 2C If only one electrostatic shielding layer 135 is provided, it can be provided on the upper side of the resistive layer 130. However, the number of electrostatic shielding layers 135 is not limited and can be adjusted according to application requirements. In some embodiments, the electrostatic shielding layer 135 is partially provided on portions of the first terminal electrode 120A and the second terminal electrode 120B.

[0034] In some embodiments, the material of the electrostatic protection layer 135 may include but is not limited to nickel chromium (NiCr), copper nickel (CuNi), nickel chromium silicon (NiCrSi), nickel chromium aluminum (NiCrAl), nickel chromium aluminum silicon (NiCrAlSi), nickel chromium aluminum yttrium (NiCrAlY), nickel chromium tantalum molybdenum (NiCrTaMo), tantalum nitride (TaN), copper manganese tin (CuMnSn), copper manganese nickel (CuMnNi), gold or other suitable resistive materials.

[0035] Figure 3A and Figure 3B Schematic diagrams illustrating patterns of an ESD protection layer 135 according to some embodiments of the present invention are shown. The ESD protection layer 135 includes a first portion 135A and a second portion 135B, separated in the X-direction. In some embodiments, at least one of the first portion 135A and the second portion 135B must have a pointed portion to achieve an ESD effect.

[0036] In some embodiments, as Figure 3A As shown, the first portion 135A of the electrostatic protection layer 135 has a first tip portion 135A. T , and the second portion 135B has a second tip portion 135BT First tip portion 135A T Facing the second tip portion 135B T , and the first tip portion 135A T With the second tip portion 135B T Separation distance W2. In some embodiments, the distance W2 is about 5 μm to about 30 μm. When the distance W2 is within the aforementioned range, the electrostatic protection layer 135 can have a tip discharge effect and is easier to complete in the process. In some embodiments, the first tip portion 135A T The angle θ between the acute angle boundary 301 and the horizontal line 303 is about 15° to about 45°, preferably about 30°. When the angle θ falls within the aforementioned range, the electrostatic protection layer 135 can have a better electrostatic discharge effect and is easier to complete in the process. T With the first tip portion 135A T Symmetrical, so with the first tip portion 135A T In some embodiments, the width W1 of the electrostatic protection layer 135 along the Y direction is about 7 μm to about 50 μm. When the width W1 falls within the aforementioned range, it will not occupy the space of the resistor layer 130 and is easier to complete in the process.

[0037] In some embodiments, as Figure 3B As shown, the first portion 135A of the electrostatic protection layer 135 has a first tip portion 135A. T , and the second portion 135B has a concave corner portion 135B R First tip portion 135A T Facing the concave corner portion 135B R , and the first tip portion 135A T With the concave corner portion 135B R Complementary. First tip portion 135A T With the concave corner portion 135B R Separation distance W2. In some embodiments, the distance W2 is about 5 μm to about 30 μm. When the distance W2 is within the aforementioned range, the electrostatic protection layer 135 can have a tip discharge effect and is easier to complete in the process. In some embodiments, the first tip portion 135A T The angle θ between one of the acute-angled edges 301 and the horizontal line 303 is approximately 15° to approximately 45°, preferably approximately 30°. When the angle θ falls within the aforementioned range, the electrostatic protection layer 135 can achieve a better electrostatic discharge effect and is easier to manufacture during the process. In some embodiments, the width W1 of the electrostatic protection layer 135 along the Y direction is approximately 7 μm to approximately 50 μm. When the width W1 falls within the aforementioned range, it does not occupy space in the resistive layer 130 and is easier to manufacture during the process.

[0038] Figure 4 FIG. 1 is a partial top view of a thin film resistor 100 according to some embodiments of the present invention. Figure 4 As shown, if the first terminal electrode 120A has a voltage V in , the second terminal electrode 120B has a voltage V out , then the voltage difference ΔV1 of the electrostatic protection layer 135 is (V in -V out The voltage difference ΔV2 between adjacent resistor lines in the resistor layer 130 is the voltage difference of the input resistor (V in -V out ) divided by the number of laser processing resistance repair times N, that is, Therefore, the voltage difference ΔV1 of the ESD protection layer 135 should be much larger than the voltage difference ΔV2 of adjacent resistor lines in the resistor layer 130. Thus, when electrostatic discharge occurs, it will start from the ESD protection layer 135, thus effectively preventing static electricity from flowing into the resistor layer 130.

[0039] Please refer again Figure 2A and Figure 2B In some embodiments, the thin film resistor 100 further includes a passivation layer 140 and a protective layer 150, wherein the passivation layer 140 completely covers the resistor layer 130, that is, the passivation layer 140 is conformally disposed on the resistor layer 130. In some embodiments, the passivation layer 140 can be formed of silicon oxide, tantalum oxide, silicon nitride, or a combination thereof. The protective layer 150 is disposed on the passivation layer 140 and completely covers the passivation layer 140. In addition, as Figure 2A As shown, the protection layer 150 also partially covers the first terminal electrode 120A and the second terminal electrode 120B. In some embodiments, the protection layer 150 is formed of epoxy resin or resin.

[0040] Thin-film resistor 100 includes an electrostatic electrode layer 160 disposed on a protective layer 150. In some embodiments, electrostatic electrode layer 160 comprises copper, a copper alloy, a nickel-chromium alloy, or a combination thereof. Electrostatic electrode layer 160 utilizes the metal-intermediate properties of these materials, resulting in a denser structure and serving as a moisture barrier, effectively preventing moisture from penetrating. Furthermore, since electrostatic electrode layer 160 comprises a metal material, it enhances the thermal conductivity of protective layer 150, thereby helping to quickly transfer heat generated by the resistor to first and second terminal electrodes 120A, 120B.

[0041] In some embodiments, as Figure 2A As shown, the electrostatic electrode layer 160 includes a first electrode portion 160A and a second electrode portion 160B separated from each other, wherein the first electrode portion 160A partially covers the first terminal electrode 120A, and the second electrode portion 160B partially covers the second terminal electrode 120B. Figure 5, which is a schematic diagram illustrating a pattern of the electrostatic electrode layer 160 according to some embodiments of the present invention. In some embodiments, similar to the electrostatic protection layer 135, the first electrode portion 160A has a tip electrode 160A T , and the second electrode portion 160B has a concave electrode 160B R , tip electrode 160A T Facing the concave electrode 160B R , and the tip electrode 160A T With concave electrode 160B R Complementary. The electrostatic electrode layer 160 having a specific pattern can serve as a second layer of electrostatic protection between the electrostatic electrode layer 160 and the protective layer 150 .

[0042] like Figure 5 As shown, in some embodiments, the width W3 of the electrostatic electrode layer 160 along the Y direction is the width W of the substrate 110 (refer to Figure 2C ) is about 2 / 5 times to about 9 / 10 times, that is, When the width W3 is within the above range, the protection effect of preventing short circuit and blocking moisture can be achieved at the same time. In some embodiments, the tip electrode 160A of the first electrode portion 160A of the electrostatic electrode layer 160 T The concave angle electrode 160B of the second electrode portion 160B R The spacing W4 in the X direction is about 10 μm to about 150 μm. When the spacing W4 is within the above range, the electrostatic electrode layer 160 can have a sharp discharge effect and is easier to complete in the process. In some embodiments, the sharp electrode 160A T The angle between one of the acute angle boundaries 501 and the horizontal line 503 Angle is about 30° to about 90°. When the thickness falls within the aforementioned range, the electrostatic electrode layer 160 can have a better electrostatic discharge effect and can be easily completed in the process.

[0043] In some embodiments, the thin film resistor 100 further includes an insulating protective layer 170, which is disposed on the electrostatic electrode layer 160 and the protective layer 150. Similar to the protective layer 150, the insulating protective layer 170 can be made of epoxy resin or resin.

[0044] The thin film resistor 100 includes a back electrode 180 and an outer electrode 190. The back electrode 180 is disposed on the lower surface 110B of the substrate 110, while the outer electrode 190 is disposed on a side surface of the substrate 110. In some embodiments, the outer electrode 190 is connected to the back electrode 180. In some embodiments, the back electrode 180 is formed from a combination of epoxy resin and silver.

[0045] Figures 6A to 6CThe following is a top view of the intermediate stage of the process of the thin film resistor 100 according to some embodiments of the present invention. Figures 6A to 6C The process flow of thin film resistor 100 is described. First, refer to Figure 6A A substrate 110 is provided, and a first electrode pair (i.e., a first end electrode 120A and a second end electrode 120B) is formed on both ends of the substrate 110. In some embodiments, when the first electrode pair is made of glass, silver, or an electrode paste mixed with silver and palladium, it is formed by printing and sintering. In other embodiments, when the first electrode pair is made of copper, it can be formed by sputtering.

[0046] Next, see Figure 6B , forming a resistor layer 130 and an electrostatic protection layer 135 on the substrate 110. In some embodiments, the resistor layer 130 and the electrostatic protection layer 135 can be formed by sputtering. In some embodiments, before sputtering, a removable barrier layer (or mask) can be formed by printing or photolithography to expose the area where the resistor layer 130 and the electrostatic protection layer 135 can be sputtered and a portion of the first terminal electrode 120A and the second terminal electrode 120B.

[0047] Next, after the resistor layer 130 and the electrostatic protection layer 135 are formed, the barrier layer is removed using a stripping solution. In some embodiments, the resistor layer 130 may be subjected to a laser trimming step, which adjusts the resistance value of the resistor using a laser or physical processing method.

[0048] In some embodiments, a barrier layer can be formed on the first and second terminal electrodes 120A, 120B using printing or photolithography. Next, a passivation layer 140 is formed on the resistor layer 130. In some embodiments, the passivation layer 140 can be formed using sputtering or chemical vapor deposition (CVD). Similarly, a stripping solution is used to remove the barrier layer.

[0049] Next, see Figure 6C, a protective layer 150 is formed on the passivation layer 140, and the protective layer 150 completely covers the passivation layer 140 and partially covers the first end electrode 120A and the second end electrode 120B. In some embodiments, the protective layer 150 can be formed by printing or yellow light photolithography. Then, an electrostatic electrode layer 160 is formed on the protective layer 150, the first end electrode 120A and the second end electrode 120B. The electrostatic electrode layer 160 includes a first electrode portion 160A and a second electrode portion 160B, wherein the first electrode portion 160A is separated from the second electrode portion 160B and a portion of the protective layer 150 is exposed. In some embodiments, the electrostatic electrode layer 160 is formed by printing, and its material can be a resin electrode composed of epoxy resin and silver. In other embodiments, the electrostatic electrode layer 160 can also be formed by sputtering, and the sputtering material can be copper, copper alloy or nickel-chromium alloy.

[0050] In some embodiments, the insulating protection layer 170 may be formed by printing or photolithography (see FIG. Figure 2A ), then, a back electrode 180 is formed on the lower surface 110B of the substrate 110 by printing (refer to Figure 2A Then, a connection layer may be formed on the side of the substrate 110 by sputtering a nickel-chromium alloy, and an outer electrode 190 of a nickel layer and a tin layer may be formed in sequence by electroplating (refer to Figure 2A ).

[0051] Based on the above, the present invention provides a thin-film resistor and its manufacturing method. These utilize a patterned electrostatic shielding layer to create a high voltage differential and the low dielectric constant of epoxy resin to direct static discharge onto the shielding layer, preventing static electricity from flowing into the resistor layer. Furthermore, the provision of an electrostatic electrode layer prevents moisture from penetrating into the resistor layer.

[0052] Although the present invention has been disclosed above with respect to several embodiments, they are not intended to limit the present invention. Those skilled in the art may make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be determined by the appended claims.

[0053]

Explanation of symbols

[0054] 100: Thin film resistor

[0055] 110:Substrate

[0056] 110A: Upper surface

[0057] 110B: bottom surface

[0058] 120A: first terminal electrode

[0059] 120B: second terminal electrode

[0060] 130:Resistor layer

[0061] 135: electrostatic protection layer

[0062] 135A: Part 1

[0063] 135A T :First tip part

[0064] 135B: Part 2

[0065] 135B T :Second tip part

[0066] 135B R :Concave corner part

[0067] 140: passivation layer

[0068] 150: Protective layer

[0069] 160: electrostatic electrode layer

[0070] 160A: first electrode portion

[0071] 160A T Tip electrode

[0072] 160B: Second electrode portion

[0073] 160B R :Concave angle electrode

[0074] 170: Insulation protective layer

[0075] 180: Back electrode

[0076] 190: External electrode

[0077] 301,501:Boundary

[0078] 303,503: horizontal line

[0079] A: Line

[0080] B: Line

[0081] N: number of times

[0082] V in ,V out :Voltage

[0083] ΔV1, ΔV2: voltage difference

[0084] W: width

[0085] W1: width

[0086] W2: Distance

[0087] W3: Width

[0088] W4: Spacing

[0089] X: direction

[0090] Y: direction

[0091] θ, Angle.

Claims

1. A thin film resistor, characterized in that: Include: substrate; a first end electrode disposed on one of two end portions of the upper surface of the substrate, wherein the two end portions are located at opposite ends of the substrate in a first direction; A second end electrode is disposed on the other of the two end portions of the upper surface of the substrate; a resistance layer, disposed on the upper surface of the substrate and between the first terminal electrode and the second terminal electrode; At least one electrostatic protection layer is disposed on the upper surface of the substrate, wherein one of the at least one electrostatic protection layer is on one side of the resistive layer, the at least one electrostatic protection layer comprises a first portion and a second portion, the first portion and the second portion are separated in the X direction, and at least one of the first portion and the second portion has a pointed portion; as well as The electrostatic electrode layer is arranged on the resistance layer.

2. The thin film resistor according to claim 1, characterized in that The first portion of the at least one electrostatic protection layer has a first tip portion, the second portion has a second tip portion, and the first tip portion faces the second tip portion.

3. The thin film resistor according to claim 1, wherein The first portion of the at least one electrostatic protection layer has the tip portion, and the second portion has a concave angle portion, the concave angle portion faces the tip portion, and the concave angle portion is complementary to the tip portion.

4. The thin film resistor according to claim 1, wherein The at least one electrostatic protection layer has a width along the Y direction of 7 μm to 50 μm, and the Y direction is perpendicular to the X direction.

5. The thin film resistor according to claim 1, wherein The first portion and the second portion of the at least one electrostatic protection layer are separated by a distance in the X direction of 5 μm to 30 μm.

6. The thin film resistor according to claim 1, wherein The angle between the acute-angled boundary of the tip portion of the at least one electrostatic protection layer and the horizontal line is 15° to 45°.

7. The thin film resistor according to claim 1, wherein The electrostatic electrode layer includes a first electrode portion and a second electrode portion. The first electrode portion and the second electrode portion are separated by a distance in the X direction, and the distance is 10 μm to 150 μm.

8. The thin film resistor according to claim 7, characterized in that The width of the electrostatic electrode layer along the Y direction is 2 / 5 to 9 / 10 times the width of the substrate.

9. The thin film resistor according to claim 7, characterized in that: The first electrode portion of the electrostatic electrode layer has a tip electrode, and an angle between an acute angle boundary of the tip electrode and a horizontal line is 30° to 90°.

10. A method for manufacturing a thin film resistor, characterized in that: Include: providing a substrate; forming a first electrode pair on two end portions of the substrate, wherein the two end portions are located at opposite ends of the substrate in the X direction; forming a resistive layer on the substrate; forming at least one electrostatic protection layer on the substrate, wherein one of the at least one electrostatic protection layer is disposed on one side of the resistive layer, the at least one electrostatic protection layer comprising a first portion and a second portion, the first portion and the second portion being separated in the X direction, and at least one of the first portion and the second portion having a pointed portion; as well as An electrostatic electrode layer is formed on the resistance layer and the at least one electrostatic protection layer.

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