Resistor and manufacturing method thereof

Abstract

A resistor includes a substrate, a pair of inner electrodes, a thin-film resistive layer, a pair of back electrodes, and a thick-film resistive layer. The substrate comprises a first surface and a second surface opposite to the first surface. The pair of inner electrodes is disposed on opposite sides of the first surface. The thin-film resistive layer is disposed on the first surface, contacts the pair of inner electrodes, has a first resistance value, and includes a value correction groove. The pair of back electrodes is arranged on two opposite sides of the second surface. The thick-film resistive layer is arranged on the second surface and is in contact with the pair of back electrodes, the thick-film resistive layer has a second resistance value, and the second resistance value is more than 100 times larger than the first resistance value. The thick-film resistive layer has the dielectric property of glass, so that the thick-film resistive layer can be used as an electrostatic discharge and surge absorption layer, the effect of protecting the thin-film resistive layer is achieved, and the thin-film resistive layer has high-precision and high-stability electrical property.

Description

Technical Field

[0001] The present invention relates to a resistor and a method for manufacturing the resistor. Background Art

[0002] In the field of thin-film resistors, high-resistance circuit designs are typically achieved by increasing the thickness of the thin-film resistor layer or adding more curved circuit patterns. However, when the number of curved circuit patterns increases, the distance between the circuits becomes too close, which can easily lead to excessive electric fields between the circuits and cause electrostatic discharge (ESD), resulting in ESD damage.

[0003] In the field of thick-film resistors, laser cutting is typically used after forming the thick-film resistor layer to achieve high-resistance circuit designs. To mitigate ESD damage, the thickness of the thick-film resistor layer can be increased or the laser cutting pattern can be fine-tuned to reduce the surface current density of the thick-film resistor layer, thereby achieving ESD protection. However, because the thick-film resistor layer is made of glass and semiconductor materials, it is prone to micro-shorting when subjected to ESD.

[0004] In view of the above, there is still a need to provide a resistor and a method for manufacturing the resistor that can solve the above problems. Summary of the Invention

[0005] The thin-film and thick-film resistor layers of the resistor of the present invention are disposed on opposite sides of a substrate. Because the thick-film resistor layer has the dielectric properties of glass, it acts as an ESD and surge absorber, protecting the thin-film resistor layer and ensuring high-precision and stable electrical properties. Furthermore, the resistor structure of the present invention (a single resistor comprising both thin-film and thick-film resistor layers) simultaneously exhibits high thermal conductivity, high surge absorption, and high reliability.

[0006] At least one embodiment of the present invention provides a resistor comprising a substrate, a pair of inner electrodes, a thin film resistor layer, a pair of back electrodes, and a thick film resistor layer. The substrate comprises a first surface and a second surface opposite the first surface. The pair of inner electrodes are disposed on opposite sides of the first surface. The thin film resistor layer is disposed on the first surface and contacts the pair of inner electrodes, wherein the thin film resistor layer has a first resistance value and comprises a trimming groove. The pair of back electrodes are disposed on opposite sides of the second surface. The thick film resistor layer is disposed on the second surface and contacts the pair of back electrodes, wherein the thick film resistor layer has a second resistance value that is at least 100 times greater than the first resistance value.

[0007] In at least one embodiment of the present invention, the second resistance value is less than 10,000 times the first resistance value.

[0008] In at least one embodiment of the present invention, the material of the thin film resistor layer is NiCr, CuNi, NiCrSi, NiCrAl, NiCrAlSi, NiCrAlY, NiCrTaMo, TaN, CuMnSn, CuMnNi or Au, and the thickness of the thin film resistor layer is less than 3 microns.

[0009] In at least one embodiment of the present invention, the material of the thick film resistor layer is a mixture of ruthenium oxide, silver, and glass, and the thickness of the thick film resistor layer is greater than 10 microns.

[0010] In at least one embodiment of the present invention, the resistor further includes a passivation layer that conformally covers the thin film resistor layer and covers the sidewalls of the thin film resistor layer, wherein the thickness of the passivation layer is 0.2 microns to 3 microns.

[0011] In at least one embodiment of the present invention, the resistor further includes a first protective layer, a second protective layer, a third protective layer, and a pair of external electrodes. The first protective layer covers the thin-film resistor layer. The second protective layer covers the thick-film resistor layer. The third protective layer covers the second protective layer. The pair of external electrodes electrically connects the pair of inner electrodes and the pair of back electrodes.

[0012] The manufacturing method of the resistor provided by at least one embodiment of the present invention includes the following operations. A substrate is provided, wherein the substrate includes a first surface and a second surface opposite to the first surface. A pair of inner electrodes are formed on opposite sides of the first surface. A pair of back electrodes are formed on opposite sides of the second surface. A thick film resistor layer is formed on the second surface and contacts the pair of back electrodes. A thin film resistor layer is formed on the first surface and contacts the pair of inner electrodes. The thin film resistor layer is adjusted. A passivation layer is conformally formed on the thin film resistor layer, wherein the passivation layer also covers the sidewalls of the thin film resistor layer. A pair of outer electrodes are formed on opposite sides of the substrate and electrically connect the pair of inner electrodes and the pair of back electrodes, wherein the thin film resistor layer has a first resistance value, the thick film resistor layer has a second resistance value, and the second resistance value is more than 100 times greater than the first resistance value.

[0013] In at least one embodiment of the present invention, the method for manufacturing a resistor further includes: forming a first protection layer on the thick film resistor layer after forming the thick film resistor layer.

[0014] In at least one embodiment of the present invention, the method for manufacturing a resistor further includes: forming a second protection layer on the passivation layer after conformally forming the passivation layer; and forming a third protection layer on the first protection layer.

[0015] In at least one embodiment of the present invention, the thick film resistor layer is formed by printing and sintering, and the thin film resistor layer is formed by sputtering or chemical vapor deposition. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Various aspects of the present disclosure are best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be understood that, in accordance with standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of various features may be arbitrarily increased or reduced for clarity.

[0017] Figure 1 FIG. 1 is a cross-sectional view of a resistor according to an embodiment of the present invention.

[0018] Figure 2A 、 Figure 3A 、 Figure 4A 、 Figure 5A 、 Figure 6A and Figure 7A for Figure 1 Cross-section diagram of a resistor at various stages of the process.

[0019] Figure 2B 、 Figure 3B and Figure 7C They are Figure 2A 、 Figure 3A and Figure 7A Bottom view of .

[0020] Figure 4B 、 Figure 5B 、 Figure 6B and Figure 7B They are Figure 4A 、 Figure 5A 、 Figure 6A and Figure 7A Top view of . DETAILED DESCRIPTION

[0021] The following disclosure provides many different embodiments or examples for implementing various features of the present disclosure. Specific embodiments of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, in the subsequent description, references to a first feature being formed above or on a second feature may include embodiments in which the first and second features are formed in direct contact, or may include embodiments in which another feature may be formed between the first and second features so that the first and second features are not in direct contact.

[0022] In addition, spatially relative terms such as "below," "beneath," "below," "above," and similar terms are used herein for convenience in describing the relationship of one element or feature to another element or feature in the figures. Spatially relative terms encompass not only the orientation depicted in the figures but also other orientations of the device in use or operation. The device may be oriented in other orientations (rotated 90 degrees or at other orientations), and the spatially relative descriptors used herein should be interpreted accordingly.

[0023] It will be understood that although terms such as "first," "second," and the like may be used herein to describe various elements, these elements should not be limited by these terms. These terms are merely used to distinguish one element from another. For example, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element, without departing from the scope of the embodiments. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0024] Figure 1 FIG1 is a cross-sectional view of a resistor 100 according to one embodiment of the present invention. The resistor 100 includes a substrate 110, a pair of internal electrodes 120, and a thin film resistive layer 130. The substrate 110 includes a first surface s1 and a second surface s2, wherein the second surface s2 is opposite to the first surface s1. The pair of internal electrodes 120 are disposed on opposite sides of the first surface s1. The thin film resistive layer 130 is disposed on the first surface s1 and contacts the pair of internal electrodes 120. Specifically, the thin film resistive layer 130 also covers a portion of the internal electrodes 120, such that the thin film resistive layer 130 spans the pair of internal electrodes 120. In other words, a portion of each of the pair of internal electrodes 120 is located between the thin film resistive layer 130 and the substrate 110.

[0025] like Figure 1 As shown, the thin film resistor layer 130 includes a plurality of trimming grooves G. It is worth noting that although Figure 1 Four trimming slots are shown, but the number of trimming slots can be adjusted according to actual resistance requirements, not limited to Figure 1 Quantity plotted.

[0026] In some embodiments, the thickness of the thin film resistive layer 130 is less than 3 microns, such as 0.1 or 0.2 microns.

[0027] Still refer to Figure 1The resistor 100 further includes a pair of back electrodes 140 and a thick-film resistive layer 150. The pair of back electrodes 140 are disposed on opposite sides of the second surface s2. The thick-film resistive layer 150 is disposed on the second surface s2 and contacts the pair of back electrodes 140. Specifically, the thick-film resistive layer 150 also covers a portion of the back electrodes 140, such that the thick-film resistive layer 150 spans the pair of back electrodes 140. In other words, a portion of each of the pair of back electrodes 140 is located between the thick-film resistive layer 150 and the substrate 110. In this embodiment, the thick-film resistive layer 150 is made of glass and therefore has the dielectric properties of glass.

[0028] In some embodiments, the thickness of the thick film resistor layer 150 is greater than 10 microns, such as 10 to 20 microns.

[0029] Still refer to Figure 1 Resistor 100 further includes a passivation layer 160. Passivation layer 160 conformally covers thin-film resistor layer 130 and covers the sidewalls ss of thin-film resistor layer 130. Specifically, passivation layer 160 also covers the bottom and side surfaces of the plurality of trimming grooves G. When passivation layer 160 covers the sidewalls ss of thin-film resistor layer 130 and the bottom and side surfaces of the trimming grooves G, it prevents water from entering thin-film resistor layer 130 from outside, thereby preventing damage to resistor 100.

[0030] In some embodiments, the thickness of the passivation layer 160 is between 0.2 microns and 3 microns, such as 0.5, 1, 1.5, 2, or 2 microns. When the passivation layer 160 is less than 0.2 microns thick, it fails to protect the underlying thin-film resistor layer 130. When the passivation layer 160 is thicker than 3 microns, it provides no substantial benefit to the overall resistor 100. It is worth noting that the presence of the passivation layer 160 facilitates the subsequent formation of the side connection layer 170 and the external electrode 180, preventing short circuits.

[0031] Still refer to Figure 1 The resistor 100 further includes a protective layer P1, a protective layer P2, a protective layer P3, a side connection layer 170, and a pair of external electrodes 180, wherein the external electrodes 180 are electrically connected to the inner electrode 120 and the back electrode 140. The protective layer P1 covers the thin film resistor layer 130. The protective layer P2 covers the thick film resistor layer 150. The protective layer P3 covers the protective layer P2. The side connection layer 170 covers the inner electrode 120 and the back electrode 140. The external electrode 180 includes a nickel layer 182 and a tin layer 184, wherein the nickel layer 182 covers the side connection layer 170, and the tin layer 184 covers the nickel layer 182.

[0032] exist Figure 1In the resistor 100, the thin film resistive layer 130 has a first resistance value, and the thick film resistive layer 150 has a second resistance value, and the second resistance value is greater than 100 times the first resistance value. In some embodiments, the second resistance value is less than 10,000 times the first resistance value, for example, less than 1,000, 2,000, 5,000, or 8,000 times.

[0033] It is worth noting that the thin-film resistor layer 130 and the thick-film resistor layer 150 are disposed on opposite sides of the substrate 110, respectively. Therefore, the thin-film resistor layer 130 and the thick-film resistor layer 150 can be considered to be arranged in parallel. In this embodiment, the second resistance value is more than 100 times greater than the first resistance value. According to Ohm's law and the principle of voltage division, when an ESD or surge voltage occurs, the second resistance value of the thick-film resistor layer 150 will withstand a greater voltage difference and power surge than the first resistance value of the thin-film resistor layer 130. Based on the principle of parallel connection, when the second resistance value is damaged and changes in resistance, the overall resistance of the parallel connection is not significantly improved, so the characteristics of the thin-film resistor remain excellent. In other words, when the second resistance value is less than 100 times the first resistance value, the characteristics of the thin-film resistor are not retained. Furthermore, because the thick-film resistor layer 150 has the dielectric properties of glass and contains pores, it is more easily able to absorb ESD than the thin-film resistor layer 130.

[0034] Figure 2A 、 Figure 3A 、 Figure 4A 、 Figure 5A 、 Figure 6A and Figure 7A for Figure 1 1 is a cross-sectional view of the resistor 100 at various stages of the process. Figure 2B 、 Figure 3B and Figure 7C They are Figure 2A 、 Figure 3A and Figure 7A Bottom view of . Figure 4B 、 Figure 5B 、 Figure 6B and Figure 7B They are Figure 4A 、 Figure 5A 、 Figure 6A and Figure 7A Top view of .

[0035] Please refer to Figure 2A First, a pair of inner electrodes 120 are formed on opposite sides of the first surface s1 of the substrate 110. Figure 2A and Figure 2B A pair of back electrodes 140 are formed on opposite sides of the second surface s2 of the substrate 110. In some embodiments, the material of the inner electrode 120 and the back electrode 140 is an electrode paste including glass, silver, or silver palladium.

[0036] like Figure 2A and Figure 2B As shown in FIG, after forming the back electrode 140, a thick film resistor layer 150 is formed on the second surface s2, wherein the thick film resistor layer 150 contacts the back electrode 140. Figure 2A and Figure 2B In certain embodiments, thick-film resistor layer 150 is formed by printing and sintering, with the sintering temperature exceeding 600°C. In some embodiments, thick-film resistor layer 150 is formed from a mixture of ruthenium oxide, silver, and glass, but is not limited to the printed resistor paste material described above. The composition ratios are well-known and are not further described here.

[0037] Please refer to Figure 3A and Figure 3B After forming the thick-film resistor layer 150, a protective layer P2 is formed on the thick-film resistor layer 150, where the protective layer P2 also covers a portion of the back electrode 140. The protective layer P2 is formed by printing and sintering. In some embodiments, the material of the protective layer P2 is a glass mixture of SiO2, MgO, TiO2, and inorganic substances. The composition ratios are common knowledge and are not further described here.

[0038] Please refer to Figure 4A and Figure 4B A thin film resistor layer 130 is formed on the first surface s1 of the substrate 110, wherein the thin film resistor layer 130 contacts the inner electrode 120. The thin film resistor layer 130 is formed by sputtering or chemical vapor deposition, wherein the operating temperature is less than 200°C. In some embodiments, the material of the thin film resistor layer 130 includes NiCr, CuNi, NiCrSi, NiCrAl, NiCrAlSi, NiCrAlY, NiCrTaMo, TaN, CuMnSn, CuMnNi, Au, or any combination thereof, but is not limited thereto.

[0039] Please refer to Figure 5A and Figure 5B After forming the thin film resistor layer 130, a trimming operation is performed on the thin film resistor layer 130 to form a plurality of trimming grooves G, wherein the trimming grooves G expose the first surface s1 of the substrate 110. In some embodiments, the trimming grooves G are formed by etching.

[0040] Please refer to Figure 6A and Figure 6BA passivation layer 160 is conformally formed on the thin-film resistor layer 130, wherein the passivation layer 160 also covers the sidewalls ss of the thin-film resistor layer 130. In other words, the passivation layer 160 contacts the internal electrode 120. The passivation layer 160 is formed by sputtering or chemical vapor deposition. In some embodiments, the passivation layer 160 may be an insulating protective film including silicon oxide, tantalum oxide, or silicon nitride.

[0041] Please refer to Figure 7A and Figure 7B After forming the passivation layer 160, a protective layer P1 is formed on the passivation layer 160, where the protective layer P1 also covers a portion of the internal electrode 120. The protective layer P1 is formed by printing or photolithography. In some embodiments, the material of the protective layer P1 is epoxy resin or a general resin.

[0042] Please refer to Figure 7A and Figure 7C After forming the protective layer P2, a protective layer P3 is formed on the protective layer P2, wherein the protective layer P3 also covers a portion of the back electrode 140. The protective layer P3 is formed by printing or photolithography. In some embodiments, the material of the protective layer P3 is epoxy resin or a general resin.

[0043] Afterwards, please refer to Figure 1 , forming a side connection layer 170, a nickel layer 182, and a tin layer 184. The side connection layer 170 is formed by sputtering. The nickel layer 182 and the tin layer 184 are formed by electroplating.

[0044] It is worth noting that the resistor 100 of the present invention first forms the thick film resistor layer 150 and then forms the thin film resistor layer 130. This is because the process temperature of the thick film resistor layer 150 (greater than 600°C) is higher than the process temperature of the thin film resistor layer 130 (less than 200°C).

[0045] In summary, the thin-film and thick-film resistor layers of the resistor of the present invention are disposed on opposite sides of a substrate. Because the thick-film resistor layer has the dielectric properties of glass, it acts as an ESD and surge absorber, thereby protecting the thin-film resistor layer and ensuring high-precision and stable electrical properties. Furthermore, the resistor structure of the present invention (a single resistor comprising both thin-film and thick-film resistor layers) simultaneously exhibits high thermal conductivity, high surge absorption, and high reliability.

[0046] The above summarizes the features of multiple embodiments so that those skilled in the art can better understand the aspects of the present disclosure. Those skilled in the art will appreciate that this disclosure can be readily used as a basis for designing or modifying other processes and structures to perform the same purposes and / or achieve the same advantages of the embodiments described herein. Those skilled in the art will also recognize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that various variations, substitutions, and modifications may be made herein without departing from the spirit and scope of the present disclosure.

[0047]

Explanation of symbols

[0048] 100: Resistor

[0049] 110:Substrate

[0050] 120: Inner electrode

[0051] 130: Thin film resistance layer

[0052] 140: Back electrode

[0053] 150: Thick film resistor layer

[0054] 160: passivation layer

[0055] 170: side connection layer

[0056] 180: External electrode

[0057] 182: Nickel layer

[0058] 184:Tin layer

[0059] G: Repair value slot

[0060] P1: Protective layer

[0061] P2: Protective layer

[0062] P3: Protective layer

[0063] s1: first surface

[0064] s2: second surface

[0065] ss: side wall.

Claims

1. A resistor, characterized in that: Include: a substrate comprising a first surface and a second surface opposite to the first surface; a pair of inner electrodes disposed on opposite sides of the first surface; a thin film resistor layer disposed on the first surface and contacting the pair of inner electrodes, wherein the thin film resistor layer has a first resistance value and includes a trimming groove; a pair of back electrodes disposed on opposite sides of the second surface; and A thick film resistor layer is disposed on the second surface and contacts the pair of back electrodes, wherein the thick film resistor layer has a second resistance value, and the second resistance value is greater than 100 times the first resistance value. 2 . The resistor according to claim 1 , wherein the second resistance value is less than 10,000 times the first resistance value.

3. The resistor according to claim 1, wherein the material of the thin film resistor layer is NiCr, CuNi, NiCrSi, NiCrAl, NiCrAlSi, NiCrAlY, NiCrTaMo, TaN, CuMnSn, CuMnNi or Au, and the thickness of the thin film resistor layer is less than 3 μm. 4 . The resistor according to claim 1 , wherein the material of the thick film resistor layer is a mixture of ruthenium oxide, silver and glass, and the thickness of the thick film resistor layer is greater than 10 microns.

5. The resistor according to claim 1, wherein Also includes: The passivation layer conformally covers the thin film resistor layer and covers the sidewall of the thin film resistor layer, wherein the thickness of the passivation layer is 0.2 micrometers to 3 micrometers.

6. The resistor according to claim 1, wherein Also includes: a first protective layer covering the thin film resistor layer; a second protective layer covering the thick film resistor layer; a third protective layer covering the second protective layer; and A pair of outer electrodes electrically connects the pair of inner electrodes and the pair of back electrodes.

7. A method for manufacturing a resistor, characterized in that: Include: Providing a substrate, wherein the substrate comprises a first surface and a second surface opposite to the first surface; forming a pair of inner electrodes on opposite sides of the first surface; forming a pair of back electrodes on opposite sides of the second surface; forming a thick film resistor layer on the second surface and contacting the pair of back electrodes; forming a thin film resistor layer on the first surface and contacting the pair of inner electrodes; performing a value adjustment operation on the thin film resistance layer; Conformally forming a passivation layer on the thin film resistor layer, wherein the passivation layer also covers sidewalls of the thin film resistor layer; and A pair of external electrodes are formed on opposite sides of the substrate and electrically connect the pair of internal electrodes and the pair of back electrodes, wherein the thin film resistor layer has a first resistance value, the thick film resistor layer has a second resistance value, and the second resistance value is more than 100 times greater than the first resistance value.

8. The method for manufacturing a resistor according to claim 7, wherein: Also includes: After forming the thick film resistor layer, a first protection layer is formed on the thick film resistor layer.

9. The method for manufacturing a resistor according to claim 8, wherein: Also includes: After conformally forming the passivation layer, forming a second protection layer on the passivation layer; and A third protection layer is formed on the first protection layer. 10 . The method for manufacturing a resistor according to claim 7 , wherein the thick film resistor layer is formed by printing and sintering, and the thin film resistor layer is formed by sputtering or chemical vapor deposition.

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