Recesse-based pickup and placement for heterogeneous integration

Abstract

An apparatus for die placement, comprising: a first stage comprising a plurality of recesses configured to receive a plurality of applying dies; a second stage comprising a support for one or more targets; and a measurement system functionally coupled to the first stage and configured to obtain sites of the plurality of applying wick in the plurality of recesses of the first stage, and to determine the plurality of applying wick based at least on the obtained sites. An output signal is provided to adjust the sites of the plurality of applicator wick supported by the first stage to correspond to the sites of the one or more targets, and to adjust the one or more targets based at least in part on the adjusted sites. An output signal is provided to place the plurality of applicator dies on the one or more targets supported by the second stage through relative movement between the first stage and the second stage.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims priority to EP application 22217347.8 filed on December 30, 2022, and the entirety of the EP application is incorporated herein by reference. Technical Field

[0002] The present disclosure generally relates to a system and method for heterogeneous integration. Background Art

[0003] During the fabrication of integrated circuits (ICs), multiple completed or unfinished ICs (e.g., whole wafers, diced wafers, partially diced wafers, chips, dies, etc.) may be contacted, stacked, bonded, or otherwise combined at various points during the fabrication process (e.g., into heterogeneous or homogeneous devices). Heterogeneous integration (e.g., the integration of different circuits or other patterned devices) may rely on the bonding of specific portions (e.g., conductive contact elements) of multiple dies—where these portions can be aligned in three dimensions to ensure functional connectivity. Aligning these dies, which may have multiple fabrication layers, different critical dimensions, different nodes, packaging, etc., may require techniques different from those used for photolithography during fabrication. As the physical dimensions of IC components continue to shrink and their structures become more complex, precision and throughput in integration become increasingly important. For applications such as heterogeneous integration, both precise and rapid placement of dies relative to one another may be desirable.

[0004] In the context of semiconductor manufacturing, improvements in die placement and alignment (eg, improvements in heterogeneous integration) lead to improvements in IC manufacturing and integration capabilities. Summary of the Invention

[0005] According to an embodiment, a device for die placement is provided, the device comprising a first carrier, the first carrier comprising a plurality of recesses, wherein the plurality of recesses are configured to receive a plurality of donor cores. The device comprises a second carrier, the second carrier comprising a support for one or more targets. The device further comprises a measurement system, the measurement system being functionally connected to the first carrier, and the measurement system being configured to obtain the positions of the plurality of donor cores in the plurality of recesses of the first carrier. The measurement system is configured to provide an output signal based at least in part on the obtained positions to adjust the positions of the plurality of donor cores supported by the first carrier to positions corresponding to the one or more targets. The measurement system is configured to provide an output signal based at least in part on the adjusted positions to place the plurality of donor cores on the one or more targets supported by the second carrier through relative movement between the first carrier and the second carrier.

[0006] In an embodiment, an adjustable stage is disposed within the plurality of recesses, wherein the adjustable stage is configured to support the plurality of donor dies. The measurement system is further configured to provide an output signal to adjust the positions of the plurality of donor dies using the adjustable stage supporting the plurality of donor dies.

[0007] In an embodiment, the measurement system further comprises an imaging device configured to obtain an image of the plurality of donor dies in the plurality of recesses. The measurement system further comprises a processor in communication with the imaging device and configured to determine the positions of the plurality of donor dies in the plurality of recesses based on the image of the plurality of donor dies in the plurality of recesses.

[0008] In an embodiment, the apparatus further comprises a voltage source, wherein the measurement system is further configured to provide an output signal to the voltage source, the voltage source being configured to facilitate alignment of the plurality of donor dies with the one or more targets when the plurality of donor dies are placed on the one or more targets by relative movement between the first stage and the second stage.

[0009] According to another embodiment, a method for die placement is provided, the method comprising placing a plurality of donor die into a plurality of recesses in a first carrier, wherein the first carrier is in a first position relative to a second carrier. The method comprises measuring the positions of the plurality of donor die in the plurality of recesses. The method comprises adjusting the positions of the plurality of donor die within the plurality of recesses to correspond to a plurality of target sites, wherein the plurality of target sites correspond to a second carrier. The method comprises placing the plurality of donor die onto the plurality of target sites, wherein the first carrier is in a second position relative to the second carrier, and wherein the first position is different from the second position.

[0010] According to an embodiment, there is provided a die placement tool configured to perform the method of any other embodiment.

[0011] According to another embodiment, one or more non-transitory machine-readable media having instructions thereon are provided that, when executed by a processor, are configured to perform the method of any other embodiment. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate one or more embodiments and, together with the description, explain these embodiments. Embodiments of the present invention will now be described, by way of example only, with reference to the accompanying schematic drawings, in which corresponding reference numerals indicate corresponding parts, and in which:

[0013] Figures 1A to 1D is a schematic diagram illustrating an exemplary die bonding method according to an embodiment.

[0014] Figure 2 is a schematic diagram illustrating a method of placing a die by a movable stage having a recess according to an embodiment.

[0015] Figure 3 is a schematic diagram illustrating a method of placing heterogeneous die integration according to an embodiment.

[0016] Figure 4 is a flow chart illustrating a die placement method according to an embodiment.

[0017] FIG5A to FIG5B is a schematic diagram illustrating a method of placing a die in a recess of a movable stage according to an embodiment.

[0018] FIG6A to FIG6B A schematic diagram illustrating a method of adjusting placement of a die in a recess of a movable stage according to an embodiment.

[0019] Figures 7A to 7C is a schematic diagram illustrating a method of placing a die onto a target by using a recess in a movable stage according to an embodiment.

[0020] Figure 8 is a flow chart illustrating a die trimming method according to an embodiment.

[0021] Figure 9 is a schematic diagram illustrating a die site measurement method using a two-dimensional image according to an embodiment.

[0022] FIG. 10A to FIG. 10B is a schematic diagram illustrating a die site measurement method using a one-dimensional image according to an embodiment.

[0023] Figure 11 is a flowchart illustrating a die site determination method according to an embodiment.

[0024] Figure 12 is a block diagram of an exemplary computer system according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0025] Embodiments of the present disclosure are described in detail with reference to the accompanying drawings, which are provided as illustrative examples of the present disclosure to enable those skilled in the art to practice the present disclosure. It is worth noting that the following figures and examples are not intended to limit the scope of the present disclosure to a single embodiment, but rather that other embodiments are possible by interchanging some or all of the elements described or illustrated. In addition, where certain elements of the present disclosure can be implemented partially or completely using known components, only those parts of such known components required for understanding the present disclosure will be described, and detailed descriptions of the other parts of such known components will be omitted so as not to obscure the present disclosure. Unless otherwise stated herein, embodiments described as being implemented in software should not be limited thereto, but may include embodiments implemented in hardware or a combination of software and hardware, and vice versa, as will be apparent to those skilled in the art. In this specification, embodiments showing a single component should not be considered restrictive; on the contrary, unless otherwise expressly stated herein, the present disclosure is intended to encompass other embodiments including multiple identical components, and vice versa. In addition, unless expressly stated otherwise, the applicant does not intend to attribute any term in the specification or claims to an uncommon or special meaning. Additionally, the present disclosure encompasses current and future known equivalents to the known components mentioned herein by way of illustration.

[0026] Although specific reference may be made herein to IC fabrication, it should be clearly understood that the description herein has many other possible applications. For example, it may be employed in the fabrication of integrated optical systems, guidance and detection patterns for magnetic domain memories, liquid crystal display panels, thin-film magnetic heads, and the like. Those skilled in the art will appreciate that, in the context of such alternative applications, any use of the terms "wafer" or "die" herein should be considered interchangeable with the more general terms "substrate" and "target portion," respectively. The term "wafer" may generally refer to a large manufacturing unit (which may be the largest manufacturing unit), while the term "die" may be used to refer to a smaller manufacturing unit, which may correspond to a lithographic pattern, a portion of a lithographic pattern, a plurality of lithographic patterns, and so on. A "die" may correspond to a portion of a "wafer"—i.e., a "die" may be produced by dicing or otherwise dividing a "wafer." The term "die" should be considered interchangeable with the terms chip, die, or other terms used to partition an IC. A patterning device (e.g., a lithographic device) may include or form one or more patterns that may correspond to one or more dies. The pattern can be generated using a CAD (computer-aided design) program based on the pattern or design layout, a process commonly referred to as EDA (electronic design automation). Unless otherwise indicated, "or" as used throughout this application is taken in a non-exclusive sense, e.g., encompassing both "and" and "or."

[0027] Now refer to Figures 1A to 1D , Figures 1A to 1D is a schematic diagram illustrating an exemplary die bonding method consistent with embodiments of the present disclosure. The exemplary die bonding method is depicted with respect to a set of reference axes. The reference axes are provided for ease of description only and should not be considered limiting. The included methods and apparatus may alternatively be described with reference to a different set of axes (e.g., cylindrical coordinates, polar coordinates, etc.), a different origin (e.g., an origin in the donor die, an origin in the target, an origin intermediate the donor die and the target, etc.), or a different orientation. A standard set of axes is selected such that the fabrication plane of the die (i.e., the wafer surface) lies in the xy plane and wherein the fabrication direction is parallel or antiparallel to the z-axis of both the donor die and the target site.

[0028] like Figures 1A to 1D As shown in , an exemplary die bonding method may involve a donor die 102 and a target die 104. For ease of description, the terms "donor" and "target" are used herein. It should be understood that the terms "donor" and "target" are provided for reference purposes and are relative, and that an element described as corresponding to a "donor" may alternatively correspond to a "target," and vice versa. The donor die 102 may have an electrically active region 106. The electrically active region 106 may correspond to a via (e.g., a through-silicon via (TSV)), an electrical contact line, a contact pad, a package pad, or other conductive area. The donor die 102 may have one or more electrically inactive regions (e.g., electrically insulating regions) outside the electrically active region 106. The electrically active region 106 may be recessed relative to other surfaces of the donor die 102 (as shown). The electrically active region 106 may correspond to a contact (e.g., a source, drain, gate, etc.) to an electrical device (not shown) within the donor die 102. Likewise, the target die 104 may have an electrically active region 108 , which may have similar properties as the electrically active region 106 .

[0029] like Figure 1A , an exemplary die bonding method can involve aligning at least some of the electrically active areas 106 of the donor die 102 with at least some of the electrically active areas 108 of the target die 104. The exemplary die bonding method can involve contacting the donor die 102 with the target die 104 while maintaining alignment between the electrically active areas 106 in the electrically active areas 108. Alignment can be complicated by multiple layers of the donor die 102 or multiple layers of the target die 104 that may be optically opaque. Figures 1A to 1C A cross-sectional view of a portion of an exemplary die bonding method is depicted.

[0030] like Figure 1AAs further shown in FIG, the donor die 102 and the target die 104 can be brought together along the z-axis, and the position of the donor die 102 or the target die 104 can be adjusted in the xy plane (eg, perpendicular to the approaching z-axis). Figure 1B As shown in FIG, the donor die 102 and the target die 104 may be annealed after contact. The annealing may be or include thermal annealing, electrical annealing, electrostatic process, van der Waals process, etc. Figure 1C As shown in , annealing can cause physical or chemical changes in the electrically active regions 106 of the donor die 102 or in the electrically active regions 108 of the target die 104, which can cause physical or electrical contact between the electrically active regions 106 in the electrically active regions 108. Thus, annealing can create electrical connectivity (e.g., integration) between the elements of the donor die 102 and the target die 104. This electrical connectivity can occur even if the electrically active regions 106 and 108 are different—for example, have different recess depths, are composed of different materials, have different sizes, etc.

[0031] Figure 1D Depicts a plan view of an exemplary die bonding method according to the present disclosure. Figure 1D As shown in , the donor die 102 and the target die 104 can have alignment marks along the xy plane to facilitate alignment of the die as a whole. The alignment marks in the xy plane of the die (e.g., alignment mark 116 on the donor die 102 or alignment mark 118 on the target die 104) can reduce the area available for circuitry. The alignment marks can be made additively or subtractively, for example, by etching or deposition in the z direction. Alignment marks used during the manufacture of the wafer (e.g., alignment marks used to align one or more production layers during lithography) can be placed in waste areas (e.g., areas between chips), which can then be destroyed (e.g., removed) during cutting. Cutting in this article refers to the mechanical separation of an area of a wafer (e.g., a manufacturing unit) into smaller areas (e.g., dies or chips) that can contain one or more operating units (e.g., logic devices, memory cells, etc.). The dicing may be performed using any suitable method, for example, scribing and breaking, mechanical sawing, laser cutting, etc., and may destroy (e.g., grind to powder or otherwise render the circuit placement inoperable) the non-zero linewidth portion of the wafer volume when separating the dies. Alternatively, the electrically active area 106 of the donor die 102 or the electrically active area 108 of the target die 104 ( Figure 1D104). The donor die 102 and the target die 104 may be aligned in three dimensions before or during contact between the donor die 102 and the target die 104. For example, upon contacting the donor die 102 within the target die 104, the donor die 102 or the target die 104 may be positioned or adjusted in the xy plane. The donor die 102 or the target die 104 may be positioned or adjusted by operation of a die actuator or other die-level element (e.g., by a piezoelectric stepper element) or by operation of a wafer chuck or other wafer-level element (e.g., by a stepper element).

[0032] The position of the donor die 102 or target die 104 can be adjusted with respect to up to six degrees of freedom. For example, assuming the origin is at the center of the donor die 102, the donor die 102 can be adjusted by movement along the x-axis (e.g., in the positive or negative x-direction), along the y-axis (e.g., in the positive or negative y-direction), and along the z-axis (e.g., in the positive or negative z-direction). The donor die 102 can also be rotationally adjusted with respect to each of those axes—e.g., rotation with respect to the x-axis, rotation with respect to the y-axis, and rotation with respect to the z-axis. That is, the donor die 102 can be adjusted by free rotation in space achieved by six different types of movement (the movements listed above are provided as examples, but the movements can be described by other axes).

[0033] Figure 2 Schematic diagram illustrating a method of placing a donor die by a movable stage having a recess. Figure 2 , the "donor die" and "target die" are relative descriptors, and a donor die may alternatively be a target die, and vice versa. Figure 2 2 is a cross-sectional view of the placement of donor dies 210A to 210E using support carrier 202. Support carrier 202 is substantially circular in the xz plane, with longitudinal axis 204 along the y direction (e.g., support carrier 202 is substantially cylindrical in three dimensions). Support carrier 202 can alternatively have a different cross-sectional shape, such as a square, hexagonal, etc. Support carrier 202 can have a symmetrical cross-section (e.g., as shown) with one or more axes of symmetry, or an asymmetrical cross-sectional area (e.g., an irregular polygon).

[0034] Support platform 202 has recesses 216A-216D having a recess depth 214 and a recess width 212. The recesses may also have a recess length in the y-direction (not shown). Recesses 216A-216D are depicted as having substantially similar dimensions, but recesses 216A-216D may alternatively have variable recess depths 214 (e.g., different recess depths 214 for recess 216A and recess 216B), variable recess widths 212 (e.g., different recess widths for recess 216C and recess 216D), or variable recess lengths (e.g., different recess lengths for recess 216B and recess 216D). The placement of recesses 216A-216D may be symmetrical or asymmetrical around the cross-sectional area of support platform 202. Support platform 202 may have a substantially symmetrical cross-section, but with an asymmetrical recess placement. For example, the support platform 202 may have a regular hexagonal cross-section, but with recesses asymmetrically placed along the longitudinal plane.

[0035] Recesses 216A to 216D are capable of receiving a donor die, such as donor die 210A to 210E. Donor die 210A to 210E have a die depth 224 and a die width 222. Donor die 210A to 210E may also have a die length in the y-direction (not shown). Donor die 210A to 210E are depicted as having substantially similar dimensions, but donor die 210A to 210E may alternatively have a variable die depth 224 (e.g., different die depths 224 for recesses 216A and 216B), a variable recess die width 222 (e.g., different die widths for recesses 216C and 216D), or a variable recess length (e.g., different die lengths for recesses 216B and 216D). Die width 222 may be less than recess width 212. Die depth 224 can be less than, greater than, or substantially the same as recess depth 214. That is, when occupying recesses 216A through 216D, donor dies 210A through 210E can be substantially recessed from the surface of support carrier 202, substantially flush with the surface of support carrier 202, or protrude from the surface of support carrier 202.

[0036] Support stage 202 can be controllably moved in a direction 206 about longitudinal axis 204. Direction 206 is provided as an example. Support stage 202 can alternatively rotate in the opposite direction or any suitable direction, translate along the x, y, or z directions, or any combination thereof. Support stage 202 can operate in both rotational and translational modes, including sequentially or simultaneously. For example, support stage 202 can move in the negative x-direction toward support structure 250 while also rotating about longitudinal axis 204. Support stage 202 can move continuously or intermittently. For example, support stage 202 can rotate in direction 206 and stop at four (or fewer or more) positions corresponding to operations in die placement. Exemplary positions and operations will now be discussed further. These positions and operations are provided as examples only, and multiple operations may be performed at a single position, a position may not correspond to an operation (e.g., may correspond to a null operation), an operation may be performed at multiple positions (e.g., an operation may be performed multiple times or in steps divided between positions), etc. These positions and operations are described as occurring in discrete positions (e.g., when movement of support stage 202 is substantially zero), but the positions may instead correspond to continuous (or quasi-continuous movement), or the operations may occur while support stage 202 is moving in one or more directions (e.g., rotationally, translationally, etc.).

[0037] For example, a first position corresponding to the position depicted for donor die 210A can correspond to placement of the die in a recess (e.g., recess 216A) of support carrier 202. Donor die 210A can be placed in recess 216A by a pick-and-place component 230. Pick-and-place component 230 can place donor die 210A on support carrier 202 in recess 216A based on alignment information (e.g., based on detecting the position of recess 216A), position information of support carrier 202 (e.g., based on detecting that support carrier 202 is in the first position), and / or the like. Pick-and-place component 230 can place donor die 210A on the support structure at a given position relative to recess 216A. For example, pick-and-place component 230 can center donor die 210A within recess 216A. Pick-and-place component 230 can have inherent errors or inaccuracies.

[0038] The placement of the donor die 210A within the recess 216A can have an intended position (for example, centered within the recess 216A) and an actual position, where the actual position can differ from the intended position based on the constraints of the pick-and-place element 230. The intended position can be a position that is not centered within the recess 216A. The intended position can be identified in two directions (for example, in the xz position of the donor die 210A, as depicted). The intended position can be identified in three directions (for example, in the xyx space of the donor die 210A, as depicted). The intended position can be identified in up to six directions (or degrees of freedom) (for example, relative to position in xyz space and relative to rotation along each of the xyz axes (in free space)). The intended position can be identified relative to any suitable dimension or orientation. The actual position (for example, of the donor die 210A) can likewise be described by any suitable dimension or orientation (for example, those described with respect to the intended position). The difference between the expected position and the actual position will be further described with reference to the second position (eg, the position of donor die 210B and recess 216B).

[0039] The difference between the expected position and the actual position can be defined by the difference between the size of recess 216A and the size of die 210A. For example, pick and place element 230 can attempt to place donor die 210A within recess 216A. If pick and place element 230 does not place donor die 210A within recess 216A, which may occur if donor die 210A is misaligned with recess 216A (e.g., if donor die 210A is connected to a portion of the non-recessed portion of support carrier 202), pick and place element 230 can detect that donor die 210A is not placed within recess 216A (e.g., based on a distance in the z-direction) or is only partially placed within recess 216A (e.g., based on an angle of donor die 210A relative to the z-direction). If the pick and place element 230 does not place the donor die 210A within the recess 216A (or detects that the donor die 210A is not placed within the recess 216A), the pick and place element 230 may remove the donor die 210A and may subsequently attempt to replace the donor die 210A (or another die) within the recess 216A. The pick and place element 230 may also or alternatively leave the recess 216A empty if the donor die 210A is not successfully placed within the recess 216A.

[0040] The pick-and-place element 230 can adhere an end effector (e.g., a conical suction end effector indicated by dashed ellipse 232) to one or more surfaces of the donor die 210A. Other end effector configurations and methods for placing the donor die 210A can be used, such as clamping, hydraulic, electrostatic, capacitive, and other types of adhesion. The pick-and-place element 230 can move the donor die 210A from a pickup location (e.g., a chip storage location) to a release location, which can be recess 216A. The pick-and-place element can move the donor die 210A in one or more directions. The pick-and-place element 230 can be a chip shooter. The pick-and-place element 230 can electrostatically adhere to the donor die 210A using suction, via a hydraulic effect, through capacitive attraction, and the like. The pick-and-place element 230 can interact with the donor die 210A via an end effector that can controllably hold and release the donor die 210A.

[0041] Once donor die 210A is placed in recess 216A, support carrier 202 can be moved (e.g., in direction 206) such that donor die 210A takes the position of donor die 210B and recess 216A takes the position of recess 216B—which can be a second position of the support structure. The second position of the support structure will now be described with reference to donor die 210B and recess 216B, it being understood that donor die 210B and recess 216B can be donor die 210A and recess 216A after the support structure has been moved from the first position to the second position.

[0042] For example, the second position corresponding to the position depicted for donor die 210B can correspond to a measurement of the position of the die within a recess of support carrier 202 (e.g., donor die 210B within recess 216B). The position (e.g., location) of donor die 210B can be measured by location measurement element 240. Location measurement element 240 can measure the actual position of donor die 210B in relative terms (e.g., relative to an edge of recess 216B) or absolute terms (e.g., distance from an origin on support carrier 202, on location measurement element 240, etc.). Location measurement element 240 can measure the desired position of donor die 210B, for example, by measuring the extension of recess 216B. Location measurement element 240 can be a camera (e.g., a two-dimensional camera, two or more one-dimensional cameras, an optical camera, etc.) or another measurement device. The position measurement element 240 can be composed of multiple position measurement elements (e.g., an in-plane measurement device that can measure position in the yz plane (relative to a reference axis) and an out-of-plane measurement device that can measure position or distance in the x direction (relative to a reference axis)). The position measurement element 240 can include one or more confocal microscopes that can measure depth (or other distances). The position measurement element 240 can use overlapping diffraction or other diffraction-based methods to measure position, relative position, or absolute position. The position measurement element 240 can operate in a scanning mode or from a fixed position relative to the support stage 202.

[0043] Once the position of donor die 210B in recess 216B is measured, support stage 202 can be moved (e.g., in direction 206) such that donor die 210B occupies the position of donor die 210C and recess 216B occupies the position of recess 216C—which position can be the third position of support stage 202. The third position of the support structure will now be described with reference to donor die 210C and recess 216C, it being understood that donor die 210C and recess 216C can be donor die 210A and recess 216A after the support structure has been moved from the first position to the third position, or similarly, can be donor die 210B and recess 216B after the support structure has been moved from the second position to the third position.

[0044] For example, the third position corresponding to the position depicted for donor die 210C can correspond to an adjustment of the position of the die in the recess of support carrier 202 (e.g., donor die 210C in recess 216C). The position of donor die 210C can be adjusted based on a measured position of donor die 210C (e.g., obtained when the support structure is in the second position). The position of donor die 210C can be adjusted based on a relationship (e.g., a difference) between the expected position and the actual position of donor die 210C. The position of donor die 210C can be adjusted by a die actuator (not shown). A die actuator is used herein to refer to a structure that includes a die chuck or other die receptacle and one or more controllable actuators that can adjust the position of the die in at least one direction. The die actuator can adjust the position of the die (e.g., donor die 210C) in one or more directions sequentially or simultaneously. The die actuator may be comprised of multiple die actuators or may operate in multiple directions (e.g., in-plane (e.g., along the xy plane for donor die 210C), out-of-plane (along the z direction for donor die 210C), with respect to three dimensions, with respect to four degrees of freedom (e.g., with respect to in-plane directions and with respect to rotational angles along in-plane axes), with respect to six degrees of freedom (e.g., with respect to xyz space and with respect to rotational angles along each of orthogonal axes), etc.). The die actuator may be integrated into the support stage 202 or may be a separate element along the bottom or side of the recesses 210A to 210D of the support structure. The die actuator may be attached to the die (e.g., donor die 210C) before it is placed into the recess 216C (e.g., at a first location). Each recess or die may have one or more die actuators.

[0045] A die actuator may be a device capable of supporting one or more dies (e.g., donor die 210C). The die actuator may support the die on one or more die chucks or other support structures. The die actuator may electrostatically or otherwise secure the die to one or more die chucks or other support structures. The die actuator may have one or more adjustable elements (e.g., struts) that can be activated to adjust the position of the die. The die actuator may be electrically controllable. The die actuator may be reusable—that is, the die actuator may attach and release the donor die 210C (e.g., attaching the donor die 210C in a first position and releasing the donor die 210C in a fourth position to be described later). The die actuator may include a piezoelectric element. The die actuator may include a spring element. The die actuator may include a dynamic element (e.g., sliding, bending, rolling, etc.) that allows the die to self-align with the target site. Other self-alignment methods may be used, including the method described in European patent application EP 22196903.3, which is incorporated herein by reference in its entirety.

[0046] The position of donor die 210C can be adjusted to correspond to a desired position. That is, the actual position of donor die 210C can be adjusted to correspond to a desired position, which can be predetermined, for example, based on the dimensions of recess 216C. The position of donor die 210C can be adjusted to correspond to a target site, for example, the site to which donor die 210C is to be adhered. The target site can be obtained from a memory based on a theoretical target (e.g., a target design), for example, obtained through measurement based on a manufactured target, etc. Adjusting the position of donor die 210C to correspond to the target site can be different from adjusting the position of donor die 210C to correspond to the desired site. For example, the desired site of donor die 210C can be the center of recess 216C. However, if the measurement results of the target site (e.g., the site to which donor die 210C is to be placed) indicate that the target site is offset, for example, in the x-direction, then adjusting the position of donor die 210C to correspond to the target site can be due to the offset in the x-direction (e.g., by a complementary amount). That is, the expected site may be a site that is not informed by information about a specific target site (eg, the same for all dies regardless of the corresponding target), or may be further informed by information about a specific target site.

[0047] Once the position of donor die 210C in recess 216C has been adjusted, support carrier 202 can be moved (e.g., in direction 206) such that donor die 210C takes the position of donor die 210D and recess 216C takes the position of recess 216D—which position can be a fourth position of support carrier 202. The fourth position of the support structure will now be described with reference to donor die 210D and recess 216D, it being understood that donor die 210D and recess 216D can be donor die 210A and recess 216A after the support structure has been moved from the first position to the fourth position, donor die 210B and recess 216B after the support structure has been moved from the second position to the fourth position, or similarly, donor die 210C and recess 216C after the support structure has been moved from the third position to the fourth position.

[0048] For example, a fourth position, corresponding to the position depicted for donor die 210D, may correspond to the placement of a die (e.g., donor die 210D in recess 216D of support carrier 202) on a corresponding target, for example, target die 220B. Target die 220B may be one of a group of target dies 220A-220B that may be sequentially contacted by donor dies (e.g., donor dies 210A-210E) during various movements of support carrier 202. Target dies 220A-220B may be the same as or different from donor dies 210A-210E. For example, target dies 220A-220B may have the same or different circuit type or orientation as donor dies 210A-210E (i.e., have the same nodes, logic-to-memory relationship, etc.). Target dies 220A-220B may have the same or different dimensions as donor dies 210A-210E. That is, donor die 210E can have the same size, larger, or smaller dimensions in the yz plane as target die 220A. Similarly, donor die 210E can have the same thickness, larger, or smaller thickness in the x-direction than target die 220A. Target dies 220A through 220C are depicted as being of the same type, but may alternatively be different types of dies.

[0049] The target dies 220A-220C are supported by the support structure 250, with each of the target dies 220A-220C being seated within a recess. The target dies 220A-220C may alternatively be seated on a non-recessed support structure. In one embodiment, the target dies 220A-220C may not be dies (i.e., may not be cut). For example, the target dies 220A-220C may alternatively be target sites in an uncut wafer (which may or may not correspond to regions intended to later become dies).

[0050] The donor die 210D can be placed on the target die 220B by moving the support carrier 202 toward the target die 220B. Alternatively or in addition, the support structure 250 can also be a movable structure that can be operated to bring the donor die 210D and the target die 220B into contact. When the donor die 210D and the target die 220B are close to each other, the donor die 210D and the target die 220B can undergo self-alignment. For example, the donor die 210D and the target die 220B can be electrically biased so that the electrically active area of the donor die 210D (e.g., Figures 1A to 1C electrically active area 106) via the electrically active area of the target die 220B (eg, Figures 1A to 1C The electrically active areas 108) are aligned by electrical attraction and repulsion.

[0051] Once donor die 210D is placed on target die 220B, support stage 202 and support structure 250 can be operated (individually or in conjunction) to place additional donor die on additional target die. For example, support structure 250 can be moved in the negative z-direction so that target die 220C approaches support stage 202, and a donor die (for example, donor die 210C after rotation of support stage 202) can be placed on target die 220C. The relative movement of support stage 202 and support structure 250 can occur in any suitable direction. The direction of gravity is not depicted, but the placement of donor die 210D on target die 220B may be subject to the effects of gravity. For example, the placement of donor die 210D on target die 220B may be facilitated by gravity (e.g., occurring in the direction of gravity) or hindered by gravity (e.g., occurring opposite to the direction of gravity). The effects of gravity can be balanced by die clamps, suction, vacuum, and other forces.

[0052] Figure 3 is a schematic diagram illustrating a method for placing heterogeneous die integration. For ease of description, reference is made to "donor die" and "target die" as described. Figure 3 Such descriptors herein are relative descriptors, and a donor die may alternatively be a target die, and vice versa, and both a donor die and a target die may alternatively be considered a "donor die." Figure 3Figure 3 is a cross-sectional view of donor dies 310A to 310F supported by a first support stage 302 and placed on target dies 360A to 360D on a second support stage 350. The first support stage 302 is substantially hexagonal in the xz plane, with the longitudinal axis 304 along the y-direction. The first support stage 302 may alternatively have a different cross-sectional shape, such as circular, square, hexagonal, etc. The second support stage 350 is substantially circular in the xz plane, with the longitudinal axis 354 along the y-direction. The second support stage 350 may alternatively have a different cross-sectional shape, such as square, hexagonal, etc. The second support stage 350 may have a symmetrical cross-section with one or more axes of symmetry (e.g., as shown), or an asymmetrical cross-sectional area (e.g., an irregular polygon). The first support stage 302 may have the same (not shown) or different (e.g., as depicted) cross-sectional area, length (e.g., in the y-direction), as the second support stage 350.

[0053] The first support platform 302 has recesses 316A to 316F, and the second support platform 350 has recesses 366A to 366D. The recesses 316A to 316F may have the same shape as that of the reference Figure 2 Recesses 216A to 216D may have the same or different recess dimensions (e.g., recess width, recess depth, recess length) as described above. Similarly, recesses 366A to 366D may have the same or different recess dimensions (e.g., recess width, recess depth, recess length) as previously described. Recesses 316A to 316F may have the same or different dimensions as recesses 366A to 366D. Recesses 316A to 316F and recesses 366A to 366D may correspond to a single die (e.g., one of donor die 310A to 310F or target die 360A to 360D, respectively). In one embodiment, recesses 316A to 316F or recesses 360A to 360D may have multiple dimensions (e.g., recess width, recess depth, recess length), for example, corresponding to multiple dies. For example, recess 316A can have a first recess depth, a first recess width, or a first recess length corresponding to a first donor core and a second recess depth, a second recess width, or a second recess length corresponding to a second donor core - that is, recess 316A can support multiple cores of the same or different sizes.

[0054] The placement of recesses 316A to 316F can be symmetrical or asymmetrical. The placement of recesses 366A to 366D can be symmetrical or asymmetrical. The spacing (e.g., angularly, in distance along the outer radius of the cross-sectional area) of recesses 316A to 316F and the spacing of recesses 360A to 360D can be the same or different.

[0055] The first support platform 302 can be controllably moved in a direction 306 about the longitudinal axis 304. The second support platform 350 can be controllably moved in a direction 356 about the longitudinal axis 354. The directions 306 and 356 are provided as examples, as previously described with reference to FIG. Figure 2 As previously described, the first support platform 302 and the second support platform 350 can move in any suitable direction and at any suitable speed (for example, continuously or intermittently). The first support platform 302 and the second support platform 350 can move in the same direction, in different directions, at the same speed, at different speeds, etc.

[0056] Based on the previous Figure 2 The exemplary positions and operations described in Figure 3 Further discussion of exemplary positions and operations. These positions and operations are provided as examples only, and multiple operations may be performed at a single position, a position may not correspond to an operation (e.g., may correspond to a null operation), an operation may be performed at multiple positions (e.g., an operation may be performed multiple times or in steps divided between positions), etc. These positions and operations are described as occurring in discrete positions (e.g., when the movement of the first support stage 302 and the second support stage 350 is substantially zero), but the positions may instead correspond to continuous (or quasi-continuous) movement, or the operations may occur while the first support stage 302 or the second support stage 350 is moving in one or more directions (e.g., rotationally, translationally, etc.).

[0057] For example, a first position of the first support carrier 302 corresponding to the position depicted for the donor die 310A can correspond to placement of a die in a recess of the first support carrier 302 (e.g., the donor die 310A in the recess 316A by the pick and place element 330A). For example, a first position of the second support carrier 350 corresponding to the position depicted for the target die 360A can correspond to placement of a die in a recess of the second support carrier 350 (e.g., the target die 360A in the recess 366A by the pick and place element 330B). The placement of the die in the recess can be performed by any suitable method (e.g., referring to FIG. Figure 2 those methods described in ).

[0058] For example, the second position of first support carrier 302 corresponding to the position depicted for donor die 310B may correspond to a measurement of the position of the die in the recess of first support carrier 302 (e.g., donor die 310B in recess 316B as measured by position measurement element 340A). For example, the second position of second support carrier 350 corresponding to the position of target die 360B may correspond to a measurement of the position of the die in the recess of second support carrier 350 (e.g., target die 360B in recess 366B as measured by position measurement element 340C). The measurement of the die in the recess may be performed by any suitable method (e.g., referring to FIG. 1 ). Figure 2 those methods described) occur.

[0059] For example, the third position of the first support carrier 302, corresponding to the position depicted for the donor die 310C, can correspond to an adjustment of the position of the die in the recess of the first support carrier 302 (e.g., the donor die 310C in the recess 316C). For example, the third position of the second support carrier 350, corresponding to the position depicted for the target die 360C, can correspond to an adjustment of the position of the die in the recess of the second support carrier 350 (e.g., the target die 360C in the recess 366C). The adjustment of the die in the recess can be performed by any suitable method, including by using a die actuator, as described with reference to FIG. Figure 2 described) occurs.

[0060] For example, the fourth position of first support stage 302, corresponding to the position depicted for donor die 310D, can correspond to a measurement of the position of the die within the recess of first support stage 302 (e.g., donor die 310D within recess 316D as measured by position measurement element 340C). One or more additional measurements of the position of the die within the recess can occur, for example, for use in iterative or incremental position adjustments. Position measurement element 340C can be the same as or different from position measurement element 340A. Position measurement element 340C can acquire the same or different position information as position measurement element 340A. For example, position measurement element 340A can acquire position information (e.g., actual position) of a die (e.g., die 310B within recess 316B) in an out-of-plane direction (e.g., an out-of-plane direction perpendicular to the longitudinal plane of recess 316B). Then, the position measurement element 340C can obtain position information (e.g., actual position) of the die (e.g., die 310D in recess 316D) in an in-plane direction (e.g., in-plane direction in the longitudinal plane of recess 316D). In another example, the position measurement element 340A can obtain coarse position information (e.g., actual position) of the die (e.g., die 310B in recess 316B), while the position measurement element 340C can obtain fine position information (e.g., actual position) of the die (e.g., die 310D in recess 316D). In yet another example, the position measurement element 340A can obtain position information (e.g., actual position) of the same die (e.g., die 310B in recess 316B) as the position measurement element 340C obtains position information (e.g., actual position) of the same die (e.g., die 310D in recess 316D). The measurement of the die in the recess can be performed by any appropriate method (e.g., reference to Figure 2 those methods described) occur.

[0061] For example, the fifth position of first support stage 302, corresponding to the position depicted for donor die 310E, can correspond to an adjustment of the position of the die within the recess of first support stage 302 (e.g., donor die 310E within recess 316E). One or more additional adjustments of the position of the die within the recess can occur, for example, as iterative or incremental position adjustments. The adjustment occurring at the fifth position can be the same as or different from the adjustment occurring at the second position described above. For example, the adjustment occurring at the fifth position can occur through operation of a die actuator, which can be the same or a different die actuator than the one used to perform the adjustment occurring at the second position. The die actuator operated at the third position (e.g., for adjusting die 310C within recess 316C) and the die actuator operated at the fifth position (e.g., for adjusting die 310E within recess 316E) can correspond to the same or different components of a die actuator (e.g., a global die actuator containing multiple subunits).

[0062] The adjustment at the fifth position can occur based on the same or different position information (e.g., the actual position acquired at the fourth position or the actual position acquired at the second position (as shown). In another example, site measurement element 340A can acquire position information (e.g., actual position) of a die (e.g., die 310B in recess 316B) in an out-of-plane direction (e.g., an out-of-plane direction perpendicular to the longitudinal plane of recess 316B) and adjust the die (e.g., die 310C in recess 316C) in the out-of-plane direction at the second position. Site measurement element 340C can then acquire position information (e.g., actual position) of a die (e.g., donor die 310D in recess 316D) in an in-plane direction (e.g., an in-plane direction within the longitudinal plane of recess 316D) and adjust the die (e.g., donor die 310E in recess 316E) in the in-plane direction at the fifth position. In yet another example, the position measurement element 340A may obtain coarse position information (e.g., actual position) of a die (e.g., die 310B in recess 316B) and may adjust a die (e.g., die 310C in recess 316C) based on the coarse position information, while the position measurement element 340C may obtain fine position information (e.g., actual position) of a die (e.g., die 310D in recess 316D) and may adjust a die (e.g., die 310E in recess 316E) based on the fine position information. In an example, position measurement element 340A may acquire position information (e.g., actual position) of a die of the same type (e.g., die 310B in recess 316B) as position measurement element 340C acquires position information (e.g., actual position) of a die (e.g., die 310D in recess 316D), and may iteratively adjust the position of the die (e.g., die 310C in recess 316C or die 310E in recess 316E). Adjustment of the die in the recess may be performed by any suitable method (e.g., referring to FIG. 1 ). Figure 2 or those methods described relative to the second position of the first support platform 302) occurs.

[0063] While the fourth and fifth positions are depicted relative to first support stage 302, multiple measurement and adjustment operations of die operations can be performed for any of the dies and support stages described herein (including at discrete locations). Multiple measurement and adjustment operations can be performed, for example, at a specific location depicted for first support stage 302. Additional measurement and adjustment operations can also be performed at a given location. Of course, additional measurement and adjustment operations can be performed as needed (e.g., if measurement results indicate that the actual position of the die falls outside a threshold). Additional measurement and adjustment operations can be performed at the same location, including by moving or returning the die to a previous measurement or adjustment location. For example, the second support stage can be reversed (e.g., rotated in a direction opposite to direction 356) to bring one or more dies back to location measurement element 340B for additional measurements.

[0064] For example, the sixth position of the first support carrier 302, corresponding to the position depicted for the donor die 310F, can correspond to the placement of a die of the first support carrier 302 (e.g., the donor die 310F in the recess 316F) on the corresponding target die (e.g., the target die 360D in the recess 366D of the second support carrier 350). For example, the fourth position of the second support carrier 350, corresponding to the position depicted for the target die 360D, can correspond to placing or bonding the die (e.g., the target die 360D in the recess 366D of the second support carrier 350) to the corresponding donor die (e.g., the donor die 310F in the recess 316F of the first support carrier 302). The placement of the dies on top of each other can be achieved by, as shown in FIG. Figure 2 The die can be placed one above the other and supported by the first support platform 302 or the second support platform 350 - for example, the bonded die can be supported by the first support platform 302, the second support platform 350, or can be released from both the first support platform 302 and the second support platform 350 (not depicted). The bonded die can be supported by a recess in the support platform and removed from the support platform at an additional position (not depicted). The bonding of the die can include a self-alignment operation. The bonding of the die can include an annealing operation. The bonding of the die can include electrical operations, including electrical testing.

[0065] Figure 4 is a flow chart illustrating a die placement method. Each of these operations is described in detail below. The operations of method 400 presented below are intended to be illustrative. In some embodiments, method 400 may be accomplished with one or more additional operations not described and / or without one or more of the operations discussed. Additionally, in Figure 4The order in which the operations of method 400 are illustrated and described below is not intended to be limiting. In some embodiments, one or more portions of method 400 may be implemented (e.g., through simulation, modeling, etc.) in one or more processing devices (e.g., one or more processors). The one or more processing devices may include one or more devices that execute some or all of the operations of method 400 in response to instructions electronically stored on an electronic storage medium. For example, the one or more processing devices may include one or more devices configured through hardware, firmware, and / or software to be specifically designed to execute one or more of the operations of method 400.

[0066] At operation 420, multiple donor die sites are obtained. The donor die sites can be obtained by measuring one or more positions of the donor die along one or more dimensions. The sites of the multiple donor die can be measured in a plane (e.g., in the xy plane) via a first method and out of a plane (e.g., in the Z direction) via a second method. For example, the sites of the multiple donor die can be measured based on one or more images in a plane. The sites of the multiple donor die can be obtained from a two-dimensional image, which can show the sites of the edges or corners of the donor die relative to the position on the support structure or on the die actuator. The sites of the multiple donor die can be obtained based on features on the exposed surface of the donor die (e.g., an electrically active area). These features of the donor die can be used as alignment marks or reference marks. In some embodiments, alignment marks can be included as exposed features of the donor die. Alignment marks can be added specifically for die bonding, or can be alignment marks corresponding to previous fabrication steps.

[0067] Multiple donor die locations can be obtained for multiple donor die, wherein the multiple donor die are located within a recess of a first carrier (e.g., a support carrier). The multiple donor die locations can be obtained relative to a feature of the recess (e.g., a sidewall, a corner, etc.). The multiple donor die locations can be obtained relative to the first carrier or an origin on the first carrier. The multiple donor die locations can be obtained relative to an intended location. The intended location can be a location at which the multiple donor die are placed within the recess of the first carrier.

[0068] Obtaining the plurality of donor die sites can occur at a given position of the first carrier (e.g., a position where a plurality of recesses containing one or more of the plurality of donor die are accessible by a site measurement element). Obtaining the plurality of donor die sites can occur after the plurality of donor die are placed within the recesses of the first carrier, for example, by a pick-and-place element. Obtaining the plurality of donor die sites can occur at a given position of the first carrier, to which the first carrier is moved, after the plurality of donor die are placed in the recesses, for example, by a pick-and-place element. Placing the plurality of donor die within the plurality of recesses can occur at a first position of the first carrier, and measuring the plurality of donor die sites can occur at a second position of the first carrier, wherein it should be understood that "first" and "second" are relative identifiers rather than absolute descriptions of positions.

[0069] At operation 430, the positions of the plurality of donor dies are adjusted. Adjustment includes situations where minimal or no position adjustment is made after measurement, for example, if the measured position corresponds to a target position within a threshold. The positions of the plurality of donor dies can be adjusted by actuation of a die actuator. The die actuator can adjust the position of the donor die in one or more directions. The die actuator can adjust the length, position, or angle of one or more supports (e.g., pillars) supporting the donor die chuck or other donor die support. The die actuator can be controlled by one or more measurement systems (e.g., measurement systems incorporating position measurement elements), including electronic control. The die actuator can be controlled by a system (e.g., one or more measurement systems) that also controls pick and place components. Adjustment of the positions of the plurality of donor dies can correspond to adjustment of one or more donor die chucks. Adjustment of the positions of the plurality of donor dies can correspond to adjustment of the positions of one or more donor die actuators. Adjustment of the positions of the plurality of donor dies can include iterative measurement of the positions of the plurality of donor dies, including as adjustments occur.

[0070] Adjustment of the locations of the plurality of donor die sites may occur at a given position of the first carrier (e.g., a position where a plurality of recesses containing one or more of the plurality of donor die are accessible by a die actuator). Adjustment of the locations of the plurality of donor die sites may occur after the locations of the plurality of donor die are obtained, for example, by a location measuring element. After the plurality of donor die sites are placed in the recesses, for example, by a pick and place element, and after the plurality of donor die sites are measured, for example, by a location measuring element, adjusting the plurality of donor die sites may occur at a given position of the first carrier, to which the first carrier is moved. Adjustment of the locations of the plurality of donor die within the plurality of recesses may occur at a third position of the first carrier, while measurement of the plurality of donor die sites may occur at a second position of the first carrier, and placement of the plurality of donor die within the recesses may occur at a first position of the first carrier, wherein "first," "second," and "third" are again relative descriptors.

[0071] Adjustment of the sites of the multiple donor dies may occur based on a target for the donor die. The target may be a target site. A target (e.g., a target site) may be obtained. The target may correspond to a site of the multiple target dies. The target may correspond to a plurality of sites on a target wafer. The target may be a position (e.g., a position in three dimensions such as along the X, Y, and Z axes, a position in six directions such as along the X, Y, and Z axes and relative to rotation angles about those axes, etc.). The target may be a plurality of sets of positions, for example, an area of the donor die to which the target is to be bonded (e.g., an electrically active area, such as a wafer). Figure 1A The present invention also provides a method for detecting an electro-active region 108 of a target or a plurality of locations on the target.

[0072] The target can be obtained from a target pattern (e.g., from a plan of the target). The target location can be obtained from measurements (e.g., from measurements of a fabricated target die, target wafer, etc.). The target can be obtained in any suitable coordinate system (e.g., relative to one or more alignment marks on a target wafer, on a die actuator, on a support structure, etc.).

[0073] In some embodiments, a target can be used to inform pick and place components when placing multiple donor dies. In some embodiments, multiple donor dies can be placed in recesses based on the multiple target sites obtained. That is, a target can be used to inform pick and place components when placing multiple donor dies.

[0074] Adjustment of the sites of multiple donor cores may include adjusting the multiple donor cores to a site corresponding to a target of the donor core, which site may be different from the site of the target core. That is, the site corresponding to the target may be a site corresponding to but not equal to the target site. For example, the site corresponding to the target of the donor core may be a site at the adjustment limit of the donor core, for example, for a target located outside the adjustment range of the donor core. Alternatively, if the target is located outside the range of adjustment of the donor core, the donor core may not be placed on the site corresponding to the target, for example, if bonding is determined to be impossible based on the target and the site corresponding to the target. The site corresponding to the target may be an approximation of the target site (for example, within the measurement accuracy). The site corresponding to the target may be an intermediate site (for example, during iterative adjustment of the sites of multiple donor cores), a placement site (for example, a site between the sites of multiple donor cores and the target site), etc.

[0075] For example, a plurality of donor dies and one or more targets can be used to determine placement locations to which both the donor die and the corresponding target can be adjusted, e.g., a placement location for each of the plurality of donor dies and the corresponding target. The donor die location and the target die location can be obtained (e.g., measured), and a placement location can be determined, wherein the placement location is the location to which both the donor die and the target can be adjusted. For example, if the donor die is offset (e.g., from a recess) by 4 μm in a first direction (e.g., from an expected position) and the target die is offset (e.g., from a recess) by 1 μm in an antiparallel direction, both the donor die and the target die can be positionally adjusted to meet at the placement location where placement of the donor die on the target can occur. For a specific example, for a final offset of 1.5 μm in the first direction, the donor die can be adjusted 2.5 μm antiparallel to its offset, while for a final offset of 1.5 μm in the first direction, the target can be adjusted 2.5 μm antiparallel to its offset. The placement site can be determined based on the location of the donor die, the location of the target, the adjustment range available to the donor die, the adjustment range available to the target, etc. The placement site can be symmetrical (e.g., equidistant between the site of the donor die and the target site) or asymmetrical (e.g., closer to one of the site of the donor die or the target site). The placement site can be symmetrical in one direction and asymmetrical in other directions. For example, the site of the donor die can be adjusted in an out-of-plane direction without adjusting the target site in an out-of-plane direction, but both the site of the donor die and the target site can be adjusted in-plane.

[0076] At operation 440, a plurality of donor dies are placed on one or more targets. The donor dies can be placed on the target by moving one or more support carriers (e.g., a first support carrier containing a plurality of recesses, a second support carrier corresponding to the target, etc.). When the donor dies are brought into contact with the target, the donor dies can undergo self-alignment. For example, the donor dies can be biased relative to the target site so that the electrically active areas of the donor dies are attracted to certain areas of the target site, e.g., electrically attractive areas. The plurality of donor dies can be adhered to the plurality of target sites. The plurality of donor dies can be bonded to the plurality of target sites, for example, by annealing. The plurality of donor dies can be released from the plurality of die actuators or from the support structure.

[0077] The placement of the plurality of donor dies on the target may occur at a given position of the first carrier (e.g., a position at which the plurality of recesses containing one or more of the plurality of donor dies are aligned with the target). The placement of the plurality of donor dies on the target may occur after adjustment of the positions of the plurality of donor dies. The placement of the plurality of donor dies on the target may occur at a given position of the first carrier, after the plurality of donor dies are placed in the recesses, e.g., by a pick-and-place element, after the positions of the plurality of donor dies are measured, e.g., by a position measurement element, and after the positions of the plurality of donor dies are adjusted, e.g., by a die actuator, the first carrier is moved to the given position. The placement of the plurality of donor dies on the target may occur at a fourth position of the first carrier, while the adjustment of the positions of the plurality of donor dies may occur at a third position of the first carrier, the measurement of the positions of the plurality of donor dies may occur at a second position of the first carrier, and the placement of the plurality of donor dies within the recesses may occur at the first position of the first carrier, where "first," "second," "third," and "fourth" are again relative descriptors.

[0078] In some embodiments, an additional set of donor die can be placed on the target. For example, if the target corresponds to the target for a target wafer, the target acquired for one of the target wafers can be applied to an additional target wafer with the same manufacturing parameters. In another example, if multiple dies are to be stacked, the target for the second layer of stacking can be acquired while the first layer of stacking is occurring—for example, the donor die sites used for the first layer of stacking can be used as the target for the second layer of stacking.

[0079] As described above, method 400 (and / or other methods and systems described herein) is configured for alignment of multiple dies.

[0080] FIG5A to FIG5B is a schematic diagram illustrating a method of placing a die in a recess of a movable stage. Figure 5AA cross-sectional view of a die 510 placed in a recess 516 on a support carrier 502 is depicted. The die 510 can be a donor die or a target die. In one embodiment, both the donor die and the target die can be placed in recesses of corresponding movable carriers (e.g., support carrier 502). For ease of description, a substantially flat surface of support carrier 502 is depicted. It should be understood that Figure 5A The recess 516 may correspond to a recess located along the longitudinal plane of the support platform 502 (eg, corresponding to Figure 2 The recess 216A in the support stage 202 or the donor die 210A corresponds to Figure 2 The target tube core 220A to 220C and the corresponding recess in the support structure 250 correspond to Figure 3 The concave portion 316A of the first support carrier 302 or the donor die 310A, or the concave portion 316A corresponding to the first support carrier 302 or the donor die 310A Figure 3 The recess 366A of the second support stage 350 or the target die 360A). Figure 5B The recesses 516 may correspond to recesses located along multiple longitudinal dimensions of the support platform 502 (e.g., corresponding to Figure 2 5. The donor die 210A-210C along the y and z directions are depicted). Multiple operations may be depicted as occurring, which may occur at different times or locations on the support stage 502. A reference frame relative to the die 510 has been chosen for descriptive purposes, but operations may also occur relative to the support stage 502, a target (not depicted), etc.

[0081] The die 510 may be any die suitable for heterogeneous integration (or homogeneous integration). The donor die 510 may be supported by a die actuator within the recess 516. The die 510 may be positioned by a pick and place element 230 (e.g., Figure 2 Die 510 may be placed in recess 516 by a pick-and-place device or another method, as described above, or alternatively, by another pick-and-place component or another method. Die 510 may be comprised of dies (e.g., donor dies or target dies) from a single wafer, from multiple wafers of the same type, or from different wafer types. Die 510 may have substantially the same dimensions or different dimensions, such as die height, die width, or die length. Die 510 may be planarized. Die 510 may each be supported by one or more die actuators. In some embodiments, multiple dies 510 may each be supported within a recess 516 or supported by one of the die actuators. In some embodiments, some of recesses 516 may be empty or otherwise not correspond to one of the dies 510. Die 510 may be smaller in size than the recess. The recesses may have the same or different recess dimensions, such as recess depth, recess width, and recess length. Die 510 may be electrostatically secured within recess 516 or otherwise secured.

[0082] The pick-and-place component 230 can place the die 510 within the recess 516 at a predetermined position. The desired position can be the same or different for each of the recesses 516. For example, the pick-and-place component 230 can attempt to place the die 510 within the recess 516 relative to a desired position relative to the support stage 502 (e.g., given by the periodicity PY in the Y direction and the periodicity PX in the X direction). In another example, the pick-and-place component 230 can attempt to place the die 510 within the recess 516 relative to the position of the recess 516 itself. When placing the die 510, the pick-and-place component 230 may or may not attempt to compensate for irregularities in the placement of the recesses 516.

[0083] It is also shown that Figure 2 The site measurement element 240 is the same as the site measurement element 240 described above. The site measurement element 240 can be a camera (e.g., a two-dimensional camera, two or more one-dimensional cameras, an optical camera, etc.) or another measurement device. The site measurement element 240 can be composed of multiple site measurement elements (e.g., an in-plane measurement device that can measure a site in the xy plane and an out-of-plane measurement device that can measure a site or distance in the z direction). The site measurement element 240 may include one or more confocal microscopes that can measure depth. The site measurement element can use overlapping diffraction or other diffraction-based methods to measure position, relative position, or absolute position. The site measurement element 240 can be operated in a scanning mode or from a fixed position relative to the support stage 502.

[0084] Figure 5B A plan view of a die 510 within a recess 516 on a support carrier 502 is depicted. The position of the die 510 may be described with reference to one or more origins. For ease of description, reference is made herein to the intended position of the die 510 (e.g., as seen from FIG5A to FIG5B The position of each of the dies 510 can be described in free space by six coordinates: Δx and θx along the x-axis, Δy and θy along the y-axis, and Δz and θz along the z-axis (as given by the periodicity PX and periodicity PY of the dies and Δz). Figure 5A ). Angle θi (where i can be x, y, or z) corresponds to the rotation angle of die 510 about the corresponding axis. Because out-of-plane rotation (e.g., along θz) is possible, angles θz and θy may not be complementary. The position of die 510 may be limited by the accuracy and reproducibility of pick and place element 230, the position of recess 516, and the regularity of support stage 502.

[0085] FIG6A to FIG6Bis a schematic diagram illustrating a method of adjusting the placement of a die in a recess of a movable stage. Figure 6A A cross-sectional view of die 510 placed in recess 516 on support stage 502 after adjusting the position of die 510 is depicted. Die 510 may be a donor die or a target die (e.g., corresponding to Figure 2 The recess 216C or the die 210C in the support stage 202 corresponds to Figure 2 The target tube core 220A to 220C and the corresponding recess in the support structure 250, corresponding to Figure 3 The concave portion 316C of the first support carrier 302 or the donor die 310C corresponds to Figure 3 The concave portion 316E of the donor die 310E of the first support carrier 302 corresponds to Figure 3 360C or recess 366C of second support platform 350). Die 510 can be adjusted (e.g., in a suitable position) by any suitable action, including by an actuator. Die adjustment will be further described with respect to a "die adjustment element," which can be an actuator, an external element such as a pick and place element, and the like.

[0086] On-die pass elements can be used with ( Figure 5A The die adjustment element may be based on or in response to the position measurement element 240 of the ( Figure 5A The die alignment element incrementally (or iteratively) adjusts the position of die 510 based on position information acquired by the target's position measurement element 240. The die alignment element may also or alternatively adjust the position of die 510 based on position information of the target (e.g., target die position, target wafer information). The die alignment element may attempt to move die 510 to a desired position (e.g., to compensate for errors in the position of recess 516, the target, etc.). In some embodiments, the die alignment element may operate in conjunction with the target's die alignment element to align die 510 with the target die at a location that may not be the desired location. The die alignment element may or may not align die 510 relative to a location on support stage 502. The die alignment element may additionally or alternatively adjust the position of the die alignment element (e.g., die actuator) itself in one or more directions.

[0087] Figure 6B A plan view of the die 510 placed within the recess 516 of the support stage 502 after alignment is depicted. The positions of the die 510 can be described with reference to one or more origins. The position of each of the die 510 can be described in free space by the following six coordinates - Δx and θx along the x-axis (where θx indicates parallelism with the x-axis), Δy and θy along the y-axis (where θy indicates parallelism with the y-axis), and Δz and θz along the z-axis (where Δz indicates parallelism with the y-axis). Figure 6A ), where θz indicates the parallelism between the die 510 and the xy longitudinal plane of the support stage 502. The position of the die 510 may be limited by the accuracy and reproducibility of the die alignment elements, the extent of the recess 516, etc., and may still include placement errors that may be smaller than possible when using pick and place elements.

[0088] Figures 7A to 7C is a schematic diagram illustrating a method of placing a donor die onto a target by using a recess in a movable stage. The descriptors "donor" and "target" are relative, and it should be understood that a target item may alternatively be placed onto a donor item. Figure 7A and Figure 7C is a cross-sectional view of the various steps of die placement, and Figure 7B It is a plan view of the die placement step. Figure 7A Donor die 710 in recess 716 is depicted being placed onto target dies 760A and 760B in recess 766 by bringing support stage 702 (having recess 716) and support stage 750 (having recess 766) into close proximity. Recess 766 is depicted as having multiple recess depths, e.g., a first recess depth corresponding to target die 760A and a second (deeper) recess depth corresponding to target die 760B. The difference between the first and second recess depths is denoted as Δz 762. Recesses 716 and 766 can have dimensions corresponding to one or more dies, where such dimensions can vary (e.g., a recess can have a portion corresponding to a first die that is deeper, wider, longer, etc., than a portion corresponding to a second die). Recesses 716 and 766 can alternatively be multiple recesses, e.g., separate recesses, contiguous recesses, non-intersecting recesses, continuous recesses, etc.

[0089] exist Figure 7A In FIG, support stage 702 is shown as being in proximity to support stage 750, however, the directions of approach are opposite, and support stage 750 may alternatively or additionally be in proximity to support stage 702. Figure 7A , the support platform 702 is shown relative to Figure 5A and Figure 6A The depiction of support stage 502 is rotated (e.g., about the y-axis) to complement the position of support stage 750, however, either or both of support stage 702 and support stage 750 may be positioned prior to approach, e.g., based on Figures 2 to 3Support stage 702 can be aligned (e.g., in the X direction, in the Y direction, in the Z direction, rotationally, etc.) with support stage 750 based on alignment marks (not depicted) (e.g., alignment marks corresponding to support stage 702, support stage 750, recess 716, recess 766, donor die 710, target die 760A, or target die 760B).

[0090] The donor die 710 can undergo self-alignment with the target die 760A or the target die 760B. The donor die 710 and the target dies 760A and 760B can undergo self-alignment due to the application of a charge (e.g., a voltage) supplied by, for example, a voltage element 730. The voltage element can supply a voltage that can oppositely charge corresponding elements of the donor die 710 and the target dies 760A and 760B. The corresponding elements can be electrically active areas, such as, Figures 1A to 1C The corresponding elements may be elements of the circuitry of the donor die 710 or the target dies 760A and 760B. For example, the corresponding elements may be TSVs to be connected. The corresponding elements may be elements that are not part of the circuitry itself (e.g., metal pads on the die edge) or top-layer features that are not integral to the die's circuitry (e.g., sacrificial features). Self-alignment of the donor die 710 and the target dies 760A and 760B may be facilitated by one or more dynamic (e.g., sliding) stages. The dynamic stages may be incorporated into one or more die actuators. The dynamic stages may include one or more rolling, bending, or otherwise adjustable elements, such as dynamic elements 720, 722, and 724. The dynamic stages may be incorporated into a die chuck or other die attach element (e.g., an electrostatic clamp). The dynamic stages may be located between the die chuck and the die or between the die chuck and the surface of the recess 716. The dynamic stage may support the donor die 720 or the target die 760A or 760B.

[0091] Figure 7B is a plan view of the placement of the donor die 710 on the target dies 760A and 760B. Figure 7B, one of the donor die 710 is depicted as solid black, corresponding to the placement of the donor die 710 on top of the target die 760A and 760B in the z-direction. The other donor die 710 are depicted as transparent rectangular shapes, illustrating the alignment of the donor die 710 with the target die 760A and 760B in the z-direction. The donor die 710 can be larger or smaller than the target die 760A and 760B in any dimension. For example, the donor die 710 is depicted as having the same width as the target die 760A, but having a larger width than the target die 760B. Likewise, if the donor die 710 or target includes multiple die (e.g., target die 760A and 760B), the multiple die can have different or the same sizes. For example, the target die 760A is depicted as having a larger width than the target die 760B (in Figure 7A (middle) smaller depth and larger width than target die 760B.

[0092] The alignment of the donor die 710 and the target dies 760A and 760B can be accurate to within 200 nm. When supported by the recess 716 or the recess 766, the alignment of the donor die 710 and the target dies 760A and 760B can be more accurate than that achievable by pick and place alone. When supported by the recess 716 and the recess 766, placement of the donor die 710 on the target dies 760A and 760B can additionally (or alternatively) be faster than placement by a die bonder. When supported by recesses 716 and recesses 766, placement of donor die 710 on target die 760A and 760B may provide die placement for various dies that are not whole wafers (e.g., diced wafers that cannot be placed, aligned, or bonded by a wafer bonder), which may require that the donor die 710 and the target die (e.g., target die 760A or target die 760B) be the same size (e.g., this may be most useful for homogeneous integration).

[0093] Figure 7CThe support carrier 702 and support carrier 750 are depicted as being removed after the donor die 710 has adhered to the target dies 760A and 760B. The contacting of the donor die 710 with the target dies 760A and 760B can include adhesion (e.g., electrostatic adhesion, van der Waals attraction, etc.) or annealing of the donor die 710 with the target dies 760A and 760B. After the donor die 710 has adhered to the target dies 760A and 760B, the donor die 710 can be released (including electrostatically) from the recess 716 of the support carrier 702. The release can include active detachment, for example, electrostatic repulsion between the recess 716 and the donor die 710. After the donor die 710 has been released from the recess 716, the support carrier 702 can be moved to separate the recess 716 and the donor die 710. The removal of the support carrier 702 can occur along the Z direction, but can alternatively or additionally occur in another direction. In some embodiments, removal of support stage 702 may include deconstruction or disassembly of support stage 702 .

[0094] Donor die 710 and target dies 760A and 760B (target dies 760A and 760B may be connected to donor die 710) may be supported by support carrier 750. As described with respect to the release of donor die 710 from recess 716 and support carrier 702, target dies 760A and 760B may be actively or passively released from recess 766 and support carrier 750. Upon release, donor die 710 and target dies 760A and 760B may be supported by another structure (not depicted) (e.g., a collection receptacle, chip feeders, etc.). Donor die 710 and target dies 760A and 760B may be annealed or otherwise bonded electrically, physically, chemically, etc., before or after removal of support carrier 702 (or removal of support carrier 750). Once bonded, donor die 710 and target dies 760A and 760B may function as a single unit, for example, in a circuit. The donor die 710 and target dies 760A and 760B may be further processed, for example, via lithography, may be further analyzed, for example, via electrical testing, may be further cut, may be further integrated (including with additional dies (e.g., additional donor dies 710, additional target dies 760A, additional target dies 760B, additional dies of different types, etc.)), may be packaged, etc.

[0095] Figure 8 is a flow chart illustrating a die adjustment method. Each of these operations is described in detail below. The operations of method 800 presented below are intended to be illustrative. In some embodiments, method 800 may be accomplished with one or more additional operations not described and / or without one or more of the operations discussed. Additionally, in Figure 8The order in which the operations of method 800 are illustrated and described below is not intended to be limiting. In some embodiments, one or more portions of method 800 may be implemented (e.g., through simulation, modeling, etc.) in one or more processing devices (e.g., one or more processors). The one or more processing devices may include one or more devices that execute some or all of the operations of method 800 in response to instructions electronically stored on an electronic storage medium. For example, the one or more processing devices may include one or more devices configured through hardware, firmware, and / or software to be specifically designed to execute one or more of the operations of method 800.

[0096] At operation 810, a donor die is placed in the recess. This can be done by picking and placing components (e.g., Figure 2 The donor die is placed in the recess by a pick and place element 230 as described above. The placement of the donor die in the recess can be monitored, for example, by the pick and place element, so that if the donor die is not completely placed in the recess, the donor die can be replaced (e.g., repositioned, discarded, etc.). The recess can be located in a movable carrier. The recess can be of the same order of magnitude as the size of the donor die, while also being larger than the donor die. The recess can have one or more recess widths, recess depths, recess lengths, etc. The donor die can be a plurality of dies, for example, previously bonded dies (e.g., two or more stacked dies) or discrete dies (e.g., for Figures 7A to 7C Target dies 760A and 760B are depicted).

[0097] At operation 820, a donor die site is obtained. Any suitable method (including the previously described Figure 4 The donor die location may be obtained using methods such as those described for operation 420 of FIG. The donor die location may be measured or may be obtained from storage.

[0098] Target sites corresponding to the target of the donor core can also be obtained. Any suitable method (including the previously referenced Figure 4 The target may be obtained by measuring the target or obtaining the target from storage. The target corresponding to the donor die may be identified from the plurality of targets.

[0099] In some embodiments, the donor die site and the target can be obtained in reverse order - the order of operations provided herein is for illustration only and should not be considered limiting. In some embodiments, the expected donor die site is determined based on the target. For example, the corresponding site for the donor die (i.e., the expected donor die site) can be determined based on the difference between the ideal target and the actual target. In some embodiments, the difference between the donor die site and the expected donor die site can be determined. The difference can be determined with respect to one or more directions (e.g., with respect to up to six degrees of freedom). The difference between the expected donor die site and the donor die site can be used to determine an adjustment factor in up to six degrees of freedom, where the adjustment factor can be a distance, a rotation angle, etc.

[0100] At operation 830, the position of the donor die is adjusted. The position of the donor die may be adjusted by a piezoelectric or other actuator. The position of the donor die may be adjusted by applying electrical actuation (or other actuation) to one or more supports to extend or shorten the supports, wherein the supports are supports for a die chuck, a die, a recess, etc. The position of the donor die may be adjusted by applying electrical actuation to the legs of one or more supports (e.g., via a piezoelectric microstepper) to move the base of one or more supports in one or more directions at a time. The position of the donor die may be adjusted based on the position of the donor die, a target, a relationship between the position of the donor die and the target, etc. Any suitable method may be used to adjust the position of the donor die. In some embodiments, the position of the donor die may be measured (or otherwise obtained) after the adjustment. The position of the donor die may be iteratively measured and adjusted (as previously described with reference to Figure 3 In some embodiments, the position of the donor die can be tracked according to the adjustment in order to determine the drift of one or more adjustment actuators or to improve future adjustments.

[0101] As described above, method 800 (and / or other methods and systems described herein) is configured for position adjustment of a die.

[0102] Figure 9 is a schematic diagram illustrating a die site measurement method using a two-dimensional image. Figure 9 is a plan view of a donor die 910 in a recess 916 of a support carrier 902 (only a portion of the support carrier 902 is shown). Figure 9, however, donor die 910 may alternatively be a target die. The locations of both donor die 910 and the corresponding target die can be determined, including relative to opposing recesses (e.g., recess 916 and the recess corresponding to the target die). The location of donor die 910 can be determined based on a two-dimensional image of recess 916 or support stage 902 including recess 916. The location of donor die 910 can be determined relative to four in-plane directions (e.g., relative to a rotation angle 920 relative to the x-axis, an x-displacement 930, a rotation angle 940 relative to the y-axis, and a y-displacement 950). X-displacement 930 and y-displacement 950 can correspond to a minimum displacement (e.g., an offset between the axis and the closest approach to the die), a maximum displacement, a displacement between two points (e.g., between the center of recess 916 along the axis and the center of donor die 910 along the side corresponding to the axis), and so forth. Rotation angles 920 and 940 may correspond to rotation angles between an axis and a one-dimensional feature of donor die 910 (e.g., a line, a side, an edge, a linear alignment mark, etc.). Rotation angles 920 and 940 may also correspond to angles given by identifying three or more points or one-dimensional features (e.g., corresponding points on the axis and points on donor die 910, such as corners, features, alignment marks, etc.). Rotation angles 920 and 940, x-displacement 930, and y-displacement 950 may be determined based on identifying one or more features of donor die 910 (e.g., corners, sides, midpoints, alignment marks, etc.). Rotation angles 920 and 940, x-displacement 930, and y-displacement 950 may be determined based on identifying one or more features of a recess within recess 916 (e.g., corners, sides, midpoints, alignment marks, etc.). Rotation angles 920 and 940, x-displacement 930, and y-displacement 950 can be determined by comparing features of donor die 910 and recess 916. Recess 916 and features of donor die 910 can be identified by any suitable image recognition method. Features of donor die 910 can include topside alignment marks (depicted as white rectangles). Features of donor die 910 can include edge alignment marks (depicted as gaps). Features of donor die 910 can include electrically active areas or other topside features.

[0103] FIG. 10A to FIG. 10B is a schematic diagram illustrating a die site measurement method using a one-dimensional image. Figure 10A is a plan view of a donor die 910 in a recess 916 of a support stage 902 (only a portion of the support stage 902 is shown). FIG. 10A to FIG. 10B , as in Figure 9In the embodiment, the donor die 910 may alternatively be the target die. The locations of both the donor die 910 and the corresponding target die may be determined, including locations relative to relative recesses (e.g., recess 916 and the recess corresponding to the target die). The location of the donor die 910 may be determined based on multiple one-dimensional images of the recess 916 or the support carrier 902 including the recess 916. The location of the donor die 910 may be determined relative to four directions in the plane (e.g., relative to a rotation angle 920 relative to the x-axis, an x-displacement 930, a rotation angle 940 relative to the y-axis, and a y-displacement 950, as Figure 9 ) to determine the location of the donor die 910. The location of the donor die 910 can be determined based on multiple one-dimensional images acquired at known or determined positions relative to the donor die 910 and the recess 916. Example orientations of the multiple one-dimensional images are shown, including horizontal directions 1025A and 1025B and vertical directions 1035A and 1035B. Horizontal directions 1025A and 1025B are provided by way of example, and it should be understood that one or more one-dimensional images can be acquired at various angles relative to the horizontal axis (e.g., substantially horizontal, at an acute angle relative to the horizontal axis, at a positive angle relative to the horizontal axis, at a negative angle relative to the horizontal axis, etc.). Similarly, vertical directions 1035A and 1035B are provided by way of example, and it should be understood that one or more one-dimensional images can be acquired at various angles relative to the vertical axis (e.g., substantially vertical, at an acute angle relative to the vertical axis, at a positive angle relative to the vertical axis, at a negative angle relative to the vertical axis, etc.), where "horizontal," "vertical," "positive," and "negative" can be relative descriptors relative to any appropriate reference frame. Horizontal directions 1025A and 1025B and vertical directions 1035A and 1035B can be purposefully angled relative to an axis (e.g., a side) of recess 916 to enhance the ability of the one-dimensional images to capture information regarding offset (e.g., offset relative to an expected position) or rotation (e.g., rotation relative to a side of recess 916) of the donor die 910. By determining the relationship between the extent of the donor die 910 and the extent of the recess 916 along multiple one-dimensional directions, the position of the donor die 910 can be determined.

[0104] Figure 10Bis a plan view of a one-dimensional (or quasi-one-dimensional) image corresponding to horizontal direction 1025A. Based on the one-dimensional image, the distance between the extent of recess 916 and the extent of donor die 910 (e.g., y distance 1060 and y distance 1064) can be determined for each side of the donor die. If donor die 910 is not detected in the one-dimensional image, the absence also provides information regarding the position of donor die 910 relative to recess 916. The distance of the donor die projection 1062 along horizontal direction 1025A can also be determined. Based on the distance along horizontal direction 1025A and the distance along at least one other direction (e.g., horizontal direction 1025B, vertical direction 1035A or 1035B, etc.), the position of donor die 910 within recess 916 can be determined. Multiple one-dimensional images can be used to better characterize the position of donor die 910, including accounting for out-of-plane rotation and displacement.

[0105] Figure 11 1 is a flow chart illustrating a method for determining a die site. Each of these operations is described in detail below. The operations of method 1100 presented below are intended to be illustrative. In some embodiments, method 1100 may be accomplished with one or more additional operations not described and / or without one or more of the operations discussed. Additionally, in Figure 11 The order in which the operations of method 1100 are illustrated in and described below is not intended to be limiting. In some embodiments, one or more portions of method 1100 may be implemented (e.g., through simulation, modeling, etc.) in one or more processing devices (e.g., one or more processors). The one or more processing devices may include one or more devices that execute some or all of the operations of method 1100 in response to instructions electronically stored on an electronic storage medium. For example, the one or more processing devices may include one or more devices configured through hardware, firmware, and / or software to be specifically designed to execute one or more of the operations of method 1100.

[0106] At operation 1110, an image of the donor die is acquired. The image may be a two-dimensional image. The image may be two or more one-dimensional images. The image may include out-of-plane measurements, such as measurements of angles or distances of displacement in an out-of-plane direction. The image of the donor die may be acquired by a camera. The image of the donor die may be acquired by a photodetector. The image of the donor die may be acquired in black and white, grayscale, full color, or the like. The image of the donor die may be acquired by illuminating the donor die with full-color light, laser light, infrared light, or the like.

[0107] At operation 1120, the image of the donor die is referenced to the corresponding recess. The image of the donor die may alternatively or additionally reference the support structure containing the recess. The image of the donor die may include an image of the corresponding recess or support structure. The image of the donor die may have a known relationship to the recess or support structure.

[0108] At operation 1130, features of the donor die are identified in the image. Features may include corners of the donor die, sides of the donor die, features of the top side of the donor die. Features may include identification of alignment marks (e.g., on the top side or edge of the donor die). Features may include identification of the rotation angle or periodicity of the feature (e.g., the period of the top side grating in one dimension). Features of recesses or support structures may also (or alternatively) be identified in the image. Features may include corners of the recess, sides of the recess, features of the recess (e.g., an engraved pattern). Features may include identification of alignment marks for the recess or support structure or other reference features.

[0109] At operation 1140, a relationship between the donor die and a feature of the corresponding recess is determined. Alternatively or additionally, a relationship between the donor die and a feature of the support structure may be determined. The relationship may be an offset (e.g., an offset in one or two dimensions), a range, a point of closest approach, a vector (e.g., a displacement vector), an angle, etc. The relationship may be determined between any two suitable points (e.g., a corner, a center point, etc.). The relationship may be determined relatively or absolutely. The relationship may be determined as a function of one or more variables (e.g., an unknown number). Multiple relationships may be determined.

[0110] At operation 1150, the position of the donor die can be determined based on one or more relationships between the donor die and features of the recess, or between the donor die and the support structure. If the relationship does not produce an absolute position, for example, instead providing a geometric relationship with two variables, another relationship can be determined. A variety of relationships can be used to solve for the absolute position of the donor die relative to the corresponding recess or support structure.

[0111] As described above, method 1100 (and / or other methods and systems described herein) is configured for position adjustment of a die.

[0112] Figure 12is a diagram of an exemplary computer system CS that can be used for one or more of the operations described herein. The computer system CS includes a bus BS or other communication mechanism for communicating information, and a processor PRO (or multiple processors) coupled to the bus BS for processing information. The computer system CS also includes a main memory MM (e.g., random access memory (RAM) or other dynamic storage device) coupled to the bus BS for storing information and instructions to be executed by the processor PRO. The main memory MM can also be used to store temporary variables or other intermediate information during the execution of instructions by the processor PRO. The computer system CS further includes a read-only memory (ROM) or other static storage device coupled to the bus BS for storing static information and instructions for the processor PRO. A storage device SD (e.g., a magnetic disk or optical disk) is provided and coupled to the bus BS for storing information and instructions.

[0113] The computer system CS can be connected via a bus BS to a display DS, such as a cathode ray tube (CRT) or a flat-panel or touch-panel display, for displaying information to the computer user. An input device ID, including alphanumeric and other keys, is connected to the bus BS for communicating information and command selections to the processor PRO. Another type of user input device is a cursor control CC, such as a mouse, trackball, or cursor direction keys, for communicating directional information and command selections to the processor PRO and for controlling cursor movement on the display DS. This input device typically has two degrees of freedom along two axes: a first axis (e.g., x) and a second axis (e.g., y), allowing the device to specify positions in a plane. Touch-panel (screen) displays can also serve as input devices.

[0114] In some embodiments, the computer system CS can perform portions of one or more methods described herein in response to the processor PRO executing one or more sequences of one or more instructions contained in the main memory MM. Such instructions can be read into the main memory MM from another computer-readable medium (e.g., a storage device SD). Execution of the sequence of instructions contained in the main memory MM causes the processor PRO to perform the processing steps (operations) described herein. One or more processors in a multi-processing arrangement can also be employed to execute the sequence of instructions contained in the main memory MM. In some embodiments, hardwired circuitry can be used in place of or in combination with software instructions. Therefore, the description herein is not limited to any specific combination of hardware circuitry and software.

[0115] As used herein, the terms "computer-readable medium" and / or "machine-readable medium" refer to any medium that participates in providing instructions to the processor PRO for execution. Such media can take many forms, including but not limited to non-volatile media, volatile media, and transmission media. Non-volatile media include, for example, optical or magnetic disks, such as storage device SD. Volatile media include dynamic memory, such as main memory MM. Transmission media include coaxial cables, copper wire, and optical fiber, including the wires comprising bus BS. Transmission media can also take the form of sound or light waves, such as those generated during radio frequency (RF) and infrared (IR) data communications. Computer-readable media can be non-transitory, such as, for example, a floppy disk, a flexible disk, a hard disk, magnetic tape, any other magnetic medium, a CD-ROM, a DVD, any other optical medium, punch cards, paper tape, any other physical medium with a pattern of holes, RAM, PROM and EPROM, FLASH-EPROM, any other memory chip, or a magnetic tape cassette. Non-transitory computer-readable media can have instructions recorded thereon. When executed by a computer, the instructions may perform any of the operations described herein.For example, a transitory computer readable medium may include a carrier wave or other propagated electromagnetic signal.

[0116] Various forms of computer-readable media may involve carrying one or more sequences of one or more instructions to the processor PRO for execution. For example, the instructions may initially be carried on a disk of a remote computer. The remote computer may load the instructions into its dynamic memory and send the instructions via a telephone line using a modem. The local modem of the computer system CS may receive data on the telephone line and convert the data into infrared signals using an infrared transmitter. An infrared detector connected to the bus BS may receive the data carried in the infrared signals and place the data on the bus BS. The bus BS carries the data to the main memory MM, from which the processor PRO retrieves and executes the instructions. The instructions received by the main memory MM may optionally be stored on a storage device SD before or after being executed by the processor PRO.

[0117] The computer system CS may also include a communication interface CI connected to the bus BS. The communication interface CI provides two-way data communication connected to a network link NDL connected to the local network LAN. For example, the communication interface CI may be an integrated services digital network (ISDN) card or a modem to provide a data communication connection to a corresponding type of telephone line. As another example, the communication interface CI may be a local area network (LAN) card to provide a data communication connection to a compatible LAN. A wireless link may also be implemented. In any such embodiment, the communication interface CI sends and receives electrical, electromagnetic, or optical signals that carry digital data streams representing various types of information.

[0118] The network link NDL typically provides data communication to other data devices through one or more networks. For example, the network link NDL can provide a connection to the host computer HC through the local network LAN. This can include data communication services provided by the global packet data communication network now commonly referred to as the "Internet" INT. The local network LAN (Internet) can use electrical, electromagnetic or optical signals that carry digital data streams. The signals through the various networks and the signals on the network data link NDL and through the communication interface CI (which carry digital data to and from the computer system CS) are exemplary forms of carrier waves that transport information.

[0119] The computer system CS can send messages and receive data including program code via (multiple) networks, network data links NDL, and communication interfaces CI. In the example of the Internet, the host computer HC can transmit the requested code for an application program via the Internet INT, the network data link NDL, the local network LAN, and the communication interface CI. For example, one such downloaded application can provide all or part of the method described herein. The received code can be executed by the processor PRO upon receipt and / or stored in a storage device SD or other non-volatile memory for later execution. In this way, the computer system CS can obtain the application code in the form of a carrier wave.

[0120] Embodiments of the present disclosure are defined in the following numbered aspects: Aspect 1: An apparatus for die placement, comprising: a first carrier comprising a plurality of recesses configured to receive a plurality of donor dies; a second stage comprising a support for one or more objects; and a measurement system functionally coupled to the first stage and configured to: obtaining locations of the plurality of donor dies in the plurality of recesses of the first stage, and Based at least on the obtained sites, an output signal is provided to adjusting the locations of the plurality of donor dies supported by the first stage to correspond to locations of the one or more targets, and Based at least in part on the adjusted position, an output signal is provided to The plurality of donor dies are placed on the one or more targets supported by the second stage through relative movement between the first stage and the second stage. Aspect 2: The device according to aspect 1, wherein an adjustable carrier is disposed within the plurality of recesses, the adjustable carrier being configured to support the plurality of donor dies; and Wherein the measurement system is further configured to provide an output signal to adjust the positions of the plurality of donor dies using the adjustable stage supporting the plurality of donor dies. Aspect 3: The apparatus of aspect 2, wherein the measurement system is further configured to provide output signals to one or more actuators to adjust the position of one or more supports of the adjustable stage. Aspect 4: The apparatus of aspect 2, wherein the output signal to adjust the positions of the plurality of donor dies comprises an output signal for piezoelectric actuation that adjusts the positions of supports of the adjustable stage. Aspect 5: The apparatus according to aspect 2, wherein the adjustable stage is adjustable with respect to at least three degrees of freedom. Aspect 6: The apparatus according to aspect 2, wherein the adjustable stage is adjustable with respect to six degrees of freedom. Aspect 7: According to the device of aspect 1, the measurement system further comprises: an imaging device configured to obtain images of the plurality of donor dies in the plurality of recesses; and A processor is in communication with the imaging device and is configured to determine the locations of the plurality of donor dies in the plurality of recesses based on the image of the plurality of donor dies in the plurality of recesses. Aspect 8: The apparatus of aspect 7, wherein the imaging device comprises at least one photodetector configured to obtain a two-dimensional image of the plurality of donor dies, The processor is further configured to cooperate with the at least one photodetector to: detecting features comprising at least one of an edge of a donor die, a corner of the donor die, an edge of a recess, a corner of a recess, a gap between the edge of the donor die and the edge of the recess, an orientation angle of an edge of a donor die, and an orientation angle of a surface of a donor die for the plurality of donor die in the two-dimensional image; and The locations of the plurality of donor dies in the plurality of recesses are determined based on the detected features. Aspect 9: The apparatus of aspect 7, wherein the imaging device comprises at least two photodetectors configured to obtain a one-dimensional image of the plurality of donor dies, The processor is further configured to cooperate with the photodetector to: detecting features comprising at least one of an edge feature of the donor die, a top feature of the donor die, an edge of a recess, an orientation angle of an edge of the donor die, and an orientation angle of a top feature of the donor die; and The locations of the plurality of donor dies in the plurality of recesses are determined based on the detected features. Aspect 10: The device according to aspect 1, wherein the measurement system is further configured to: obtaining the sites of the one or more targets, and Provides output signal to The locations of the plurality of donor dies supported by the first stage are adjusted to correspond to the obtained locations of the one or more targets. Aspect 11: The apparatus according to aspect 1, wherein outputting signals to adjust the positions of the plurality of donor dies supported by the first stage to positions corresponding to the one or more targets comprises: outputting a signal to adjust the positions of the plurality of donor dies supported by the first stage to correspond to placement positions based on the obtained positions; and outputting a signal to adjust the position of the one or more objects supported by the second stage to correspond to the placement position based on the position of the one or more objects; and Wherein, outputting signals to place the plurality of donor die on the one or more targets includes outputting signals to place the plurality of donor die on the one or more targets at the placement site. Aspect 12: The apparatus according to aspect 11, wherein the measurement system is further configured to: The placement site is determined based on the obtained sites of the plurality of donor die and the sites of the one or more targets. Aspect 13: The apparatus of aspect 1, wherein: An electrostatic chuck is disposed within the plurality of recesses and is controllable by the measurement system, the electrostatic chuck being configured to hold the plurality of donor dies within the plurality of recesses. Wherein, the measurement system is further configured to provide an output signal to at least partially release the electrostatic clamp that holds the plurality of donor dies within the plurality of recesses when the plurality of donor dies are placed on the one or more targets by relative movement between the first stage and the second stage. Aspect 14: The apparatus according to aspect 1, further comprising: voltage source, Wherein, the measurement system is further configured to provide an output signal to the voltage source to promote alignment of the plurality of donor dies with the one or more targets when the plurality of donor dies are placed on the one or more targets by relative movement between the first stage and the second stage. Aspect 15: The apparatus according to Aspect 14, wherein the measurement system is further configured to provide an output signal to the voltage source to provide multiple voltages to the multiple donor cores, and to provide a given voltage of the multiple voltages to a given donor core among the multiple donor cores to promote alignment of the given donor core with the one or more targets. Aspect 16: The apparatus according to aspect 1, further comprising: A dynamic stage is interposed between each of the plurality of recesses and each of the plurality of donor dies, the dynamic stage allowing at least one of translation and rotation of each of the plurality of donor dies during alignment of the plurality of donor dies with the one or more targets. Aspect 17: The apparatus according to aspect 16, wherein the dynamic stage comprises rollers. Aspect 18: The apparatus of aspect 1, wherein the first stage is at least one of rotatable about a longitudinal axis and translatable about a longitudinal axis. Aspect 19: The apparatus of aspect 1, wherein the second stage is at least one of translatable about a longitudinal plane and rotatable about a longitudinal axis. Aspect 20: The apparatus according to aspect 1, wherein the first stage is a movable stage and the second stage is a stationary stage. Aspect 21: The apparatus according to aspect 1, further comprising: a pick and place tool functionally coupled to the measurement system, the pick and place tool configured to place a donor die within the plurality of recesses, Wherein, the measurement system is further configured to provide an output signal to control the pick and place tool to place the plurality of donor dies within the plurality of recesses. Aspect 22: The apparatus according to aspect 1, further comprising: A bonding tool is configured to bond the plurality of donor dies to the one or more targets. Aspect 23: A method for die placement, comprising: placing a plurality of donor die into a plurality of recesses in a first stage, the first stage being in a first position relative to a second stage; measuring the locations of the plurality of donor dies in the plurality of recesses; adjusting the locations of the plurality of donor dies within the plurality of recesses to correspond to a plurality of target sites, the plurality of target sites corresponding to a second stage; and The plurality of donor die are positioned onto the plurality of target sites with the first stage in a second position relative to the second stage, the first position being different from the second position. Aspect 24: The method of aspect 23, wherein measuring the locations of the plurality of donor dies comprises measuring the locations of the plurality of donor dies by optical metrology. Aspect 25: The method according to Aspect 23, wherein adjusting the positions of the plurality of donor main dies comprises adjusting the positions of the plurality of donor main dies by adjusting an adjustable carrier within the plurality of recesses, the adjustable carrier being configured to support the plurality of donor main dies within the plurality of recesses. Aspect 26: The method of aspect 23, wherein placing the plurality of donor wicks onto the plurality of target sites comprises: applying a voltage between the plurality of donor die and the plurality of target sites using a voltage source, the voltage configured to cause alignment of the plurality of donor die with the plurality of target sites; and As the first stage and the second stage approach, an electrostatic clamping force holding the plurality of donor dies within the plurality of recesses is at least partially released. Aspect 27: The method of aspect 26, wherein the electrostatic clamping force is released such that the plurality of donor dies are aligned with the plurality of target sites due to the applied voltage. Aspect 28: A method according to Aspect 27, wherein applying the voltage includes applying multiple voltages between the multiple donor cores and the multiple target sites, and a given voltage among the multiple voltages is configured to promote alignment between a given donor core among the multiple donor cores and a given target site among the multiple target sites. Aspect 29: The method of aspect 23, wherein adjusting the locations of the plurality of donor dies within the plurality of recesses to correspond to a plurality of target sites comprises: measuring the plurality of target sites; and The sites of the plurality of donor die are adjusted to correspond to the measured plurality of target sites. Aspect 30: The method of aspect 23, wherein adjusting the locations of the plurality of donor dies within the plurality of recesses to correspond to a plurality of target sites comprises: adjusting the sites of the plurality of donor die to correspond to a plurality of placement sites; and adjusting the plurality of target sites to correspond to the plurality of placement sites, and Wherein, placing the plurality of donor main dies on the plurality of target sites includes placing the plurality of donor main dies on the adjusted plurality of target sites at the plurality of placement sites. Aspect 31: The method of aspect 30, further comprising determining the plurality of placement sites based on the locations of the plurality of donor die and the plurality of target sites. Aspect 32: The method of aspect 23, wherein placing the plurality of donor dies onto the plurality of target sites further comprises aligning the first stage with the second stage by adjusting a position of at least one of the first stage and the second stage. Aspect 33: The method of aspect 23, wherein measuring the positions of the plurality of donor dies in the plurality of recesses comprises measuring the positions of the plurality of donor dies in the plurality of recesses when the first carrier is in a third position relative to the second carrier. Aspect 34: The method of aspect 23, wherein adjusting the positions of the plurality of donor dies within the plurality of recesses comprises adjusting the positions of the plurality of donor dies when the first stage is in a fourth position relative to the second stage. Aspect 35: According to the method of Aspect 23, the first carrier includes multiple groups of recesses, wherein, when the first carrier is in the first position, the first group of recesses is configured to receive a first plurality of donor cores, and the second group of recesses is configured to allow optical measurement of the sites of the second plurality of donor cores. Aspect 36: The method of aspect 35, wherein when the first stage is in the first position, a third set of recesses is configured to place a third plurality of donor dies onto the plurality of target sites. Clause 37: A die placement tool configured to perform the method of any one of Clauses 23 to 36.

[0121] While the concepts disclosed herein may be used for manufacturing with substrates (eg, silicon wafers), it should be understood that the disclosed concepts may be used with any type of manufacturing system (eg, those used for manufacturing on substrates other than silicon wafers).

[0122] In addition, combinations and subcombinations of the disclosed elements may include separate embodiments.For example, one or more of the operations described above may be included in separate embodiments, or they may be included together in the same embodiment.

[0123] The foregoing description is intended to be illustrative rather than restrictive. It will therefore be apparent to those skilled in the art that modifications may be made as described without departing from the scope of the claims set out below.

Claims

1. An apparatus for die placement, comprising: a first carrier comprising a plurality of recesses configured to receive a plurality of donor dies; a second stage comprising a support for one or more objects; and a measurement system functionally coupled to the first stage and configured to: obtaining locations of the plurality of donor dies in the plurality of recesses of the first stage, and providing an output signal to adjust the positions of the plurality of donor dies supported by the first stage to correspond to positions of the one or more targets based at least on the obtained positions, and Based at least in part on the adjusted positions, output signals are provided to place the plurality of donor dies on the one or more targets supported by the second stage through relative movement between the first stage and the second stage.

2. The device according to claim 1, in, An adjustable stage is disposed within the plurality of recesses, the adjustable stage being configured to support the plurality of donor dies; and Wherein the measurement system is further configured to provide an output signal to adjust the positions of the plurality of donor dies using the adjustable stage supporting the plurality of donor dies.

3. The device according to claim 2, wherein The measurement system is further configured to provide output signals to one or more actuators to adjust the position of one or more supports of the adjustable stage.

4. The device according to claim 2, wherein The output signal for adjusting the position of the plurality of donor dies includes an output signal for piezoelectric actuation that adjusts the position of a support of the adjustable stage.

5. The apparatus according to claim 2, wherein The adjustable stage is capable of being adjusted with respect to six degrees of freedom.

6. The apparatus according to claim 1, wherein the measurement system further comprises: an imaging device configured to obtain images of the plurality of donor dies in the plurality of recesses; and A processor is in communication with the imaging device and is configured to determine locations of the plurality of donor dies in the plurality of recesses based on the image of the plurality of donor dies in the plurality of recesses.

7. The apparatus according to claim 6, wherein The imaging device comprises at least one photodetector configured to obtain a two-dimensional image of the plurality of donor dies, The processor is further configured to cooperate with the at least one photodetector to: detecting features about the plurality of donor die in the two-dimensional image, the features comprising at least one of an edge of a donor die, a corner of the donor die, an edge of a recess, a corner of a recess, a gap between an edge of the donor die and an edge of the recess, an orientation angle of an edge of the donor die, and an orientation angle of a surface of the donor die; and The locations of the plurality of donor dies in the plurality of recesses are determined based on the detected features.

8. The apparatus according to claim 6, wherein The imaging device comprises at least two photodetectors configured to obtain a one-dimensional image of the plurality of donor dies, The processor is further configured to cooperate with the photodetector to: detecting features, the features comprising at least one of an edge feature of the donor die, a top feature of the donor die, an edge of the recess, an orientation angle of the edge of the donor die, and an orientation angle of the top feature of the donor die; and The positions of the plurality of donor dies in the plurality of recesses are determined based on the detected features.

9. The apparatus according to claim 1 , wherein the measurement system is further configured to: obtaining the sites of the one or more targets, and Output signals are provided to adjust the positions of the plurality of donor dies supported by the first stage to correspond to the obtained positions of the one or more targets.

10. The apparatus according to claim 1, wherein Output signals for adjusting the positions of the plurality of donor dies supported by the first stage to correspond to positions of the one or more targets include: an output signal for adjusting the positions of the plurality of donor dies supported by the first stage to correspond to placement positions based on the obtained positions; and an output signal for adjusting the position of the one or more objects supported by the second stage to correspond to the placement position based on the position of the one or more objects; and Wherein, the output signal for placing the plurality of donor dies on the one or more targets includes an output signal for placing the plurality of donor dies on the one or more targets at the placement site.

11. The apparatus according to claim 10, wherein the measurement system is further configured to: The placement site is determined based on the obtained sites of the plurality of donor die and the sites of the one or more targets.

12. The apparatus of claim 1, wherein: An electrostatic chuck is disposed within the plurality of recesses, the electrostatic chuck being controllable by the measurement system, the electrostatic chuck being configured to hold the plurality of donor dies within the plurality of recesses, Wherein, the measurement system is further configured to provide an output signal to at least partially release the electrostatic clamp that holds the plurality of donor cores within the plurality of recesses when the plurality of donor cores are placed on the one or more targets by relative movement between the first stage and the second stage.

13. The apparatus of claim 1 , further comprising: A dynamic stage is interposed between each of the plurality of recesses and each of the plurality of donor dies, the dynamic stage allowing at least one of translation and rotation of each of the plurality of donor dies during alignment of the plurality of donor dies with the one or more targets.

14. The apparatus of claim 1, further comprising: a pick and place tool functionally coupled to the measurement system, the pick and place tool configured to place a donor die within the plurality of recesses, Wherein the measurement system is further configured to provide an output signal to control the pick and place tool to place the plurality of donor dies within the plurality of recesses.

15. A method for die placement, comprising: placing a plurality of donor die into a plurality of recesses in a first stage, the first stage being in a first position relative to a second stage; measuring the locations of the plurality of donor dies in the plurality of recesses; adjusting the positions of the plurality of donor dies within the plurality of recesses to correspond to a plurality of target sites, the plurality of target sites corresponding to the second stage; and The plurality of donor die are positioned onto the plurality of target sites with the first stage in a second position relative to the second stage, the first position being different from the second position.

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