Pick and place for heterogeneous integration with die actuators

Abstract

A method for die placement is provided, comprising: obtaining a plurality of target locations for a plurality of donor dies; measuring a position of the plurality of donor dies, the plurality of donor dies being supported by a plurality of die actuators; adjusting a position of the plurality of donor dies to substantially correspond to the plurality of target positions using the plurality of die actuators; and placing the plurality of donor dies on the plurality of target locations.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority from European application No. 22217348.6, filed on December 30, 2022, and the entire contents of this European application are incorporated herein by reference. Technical Field

[0003] The present disclosure generally relates to systems and methods for heterogeneous integration. Background Art

[0004] During the fabrication of integrated circuits (ICs), multiple completed or unfinished ICs (e.g., complete wafers, sawn wafers, partially sawn wafers, chips, dies, etc.) may be placed into contact, stacked, bonded, or otherwise connected (e.g., into heterogeneous or homogeneous devices) at various points in the manufacturing process. Heterogeneous integration, such as the integration of different circuits or other patterned devices, may rely on connecting specific portions (e.g., conductive contact elements) of the multiple dies, where these specific portions can be aligned in three dimensions to ensure functional connectivity. Aligning these dies, which may have multiple fabrication layers, different critical dimensions, different nodes, packaging, etc., may require the use of different lithographic techniques during fabrication. As the physical size of IC components continues to shrink and their structures become more complex, integration accuracy and throughput become increasingly important. For applications such as heterogeneous integration, accurate and rapid placement of dies relative to each other may be desirable.

[0005] In the context of semiconductor manufacturing, improvements in die placement and alignment (eg, improvements in heterogeneous integration) lead to improvements in IC manufacturing and integration capabilities. Summary of the Invention

[0006] According to an embodiment, a method for die placement is provided, comprising: obtaining a plurality of target positions for a plurality of donor dies; measuring positions of the plurality of donor dies, wherein the plurality of donor dies are supported by a plurality of die actuators; adjusting the positions of the plurality of donor dies to substantially correspond to the plurality of target positions using the plurality of die actuators; and placing the plurality of donor dies on the plurality of target positions.

[0007] In an embodiment, measuring the positions of the plurality of donor dies includes: placing the plurality of donor dies onto the plurality of die actuators, wherein the plurality of die actuators are supported by a support structure; and measuring the positions of the plurality of donor dies relative to the support structure.

[0008] In an embodiment, measuring the positions of the plurality of donor dies further comprises placing the plurality of die actuators on the support structure based on a plurality of target positions for the plurality of donor dies.

[0009] In an embodiment, adjusting the positions of the plurality of donor dies using the plurality of die actuators includes adjusting the positions of the plurality of donor dies supported by the donor die chuck of the plurality of die actuators by actuation of adjustable supports supporting the donor die chuck.

[0010] In an embodiment, placing the plurality of donor dies on the plurality of target locations further comprises disengaging the plurality of donor dies from the plurality of die actuators; and bonding the plurality of donor dies to the plurality of target locations.

[0011] According to another embodiment, a die actuator is provided, comprising: a donor die chuck; and at least three adjustable supports supporting the donor die chuck, wherein a position of the donor die chuck can be controlled by actuation of the adjustable supports.

[0012] According to an embodiment, a support structure including a plurality of die actuations is provided.

[0013] According to another embodiment, an apparatus is provided that includes a plurality of die actuators, wherein the die actuators include a donor die chuck each for supporting an associated donor die. The position of each donor die chuck can be controlled by actuation of the donor die chuck. The apparatus includes a measurement system functionally coupled to the plurality of die actuators and configured to obtain a plurality of target positions for a plurality of donor dies; obtain positions of a plurality of donor dies supported by the donor die chucks; and adjust the positions of the plurality of donor dies by actuation of the donor die chucks so that the positions of the plurality of donor dies substantially correspond to the plurality of target positions.

[0014] In an embodiment, the die actuator further comprises at least three adjustable supports supporting each donor die chuck, wherein the position of each donor die chuck can be controlled by actuation of the adjustable supports.

[0015] In an embodiment, the measurement system comprises a processor configured to adjust positions of the plurality of donor dies by actuation of the supporting adjustable support such that the positions of the plurality of donor dies substantially correspond to the plurality of target positions.

[0016] According to another embodiment, one or more non-transitory machine-readable media having instructions thereon are provided, which when executed by the processor are configured to perform the method of any other embodiment. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate one or more embodiments and, together with the embodiments, explain these embodiments. Embodiments of the present invention will now be described, by way of example only, with reference to the accompanying schematic drawings, in which corresponding reference characters indicate corresponding parts, and in which:

[0018] Figures 1A to 1D is a diagram illustrating an exemplary die bonding method according to an embodiment.

[0019] Figures 2A to 2B is a schematic diagram illustrating a placement method of a die actuator according to an embodiment.

[0020] Figures 3A to 3B is a schematic diagram illustrating a method of placing a donor die on a die actuator according to an embodiment.

[0021] Figures 4A to 4B is a schematic diagram illustrating a method of obtaining multiple target positions according to an embodiment.

[0022] Figures 5A to 5B is a schematic diagram illustrating a method of adjusting a position of a donor die according to an embodiment.

[0023] 6A to 6D is a schematic diagram illustrating steps of a method of placing a donor die on a target location, according to an embodiment.

[0024] Figure 7 is a flow chart illustrating a method of die alignment according to an embodiment.

[0025] Figures 8A to 8B is a schematic diagram illustrating an example die actuator according to an embodiment.

[0026] Figure 9 is a schematic diagram illustrating the relationship between an example pick and place system and an example die actuator, according to an embodiment.

[0027] FIG. 10A to FIG. 10B is a schematic diagram illustrating an example die actuator according to an embodiment.

[0028] Figure 11 is a flow chart illustrating a method of die actuator adjustment according to an embodiment.

[0029] Figure 12 is a block diagram of an example computer system according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0030] Embodiments of the present disclosure are described in detail with reference to the accompanying drawings, which are provided as illustrative examples of the present disclosure so that those skilled in the art can practice the present disclosure. It is worth noting that the following figures and examples are not intended to limit the scope of the present disclosure to a single embodiment, but rather to make other embodiments possible by means of the interchange of some or all of the elements described or illustrated. In addition, where certain elements of the present disclosure can be implemented partially or completely using known components, only those parts of such known components that are necessary to understand the present disclosure will be described, and detailed descriptions of other parts of such known components will be omitted so as not to confuse the present disclosure. Unless otherwise specified herein, as will be understood by those skilled in the art, embodiments described as being implemented in software should not be limited thereto, but may include embodiments implemented in hardware or a combination of software and hardware, and vice versa. In this specification, embodiments showing singular components should not be considered restrictive; rather, unless otherwise expressly stated herein, the present disclosure is intended to cover other embodiments including multiple identical components, and vice versa. In addition, unless so expressly stated, the applicant does not intend to attribute any term in this specification or patent application to an uncommon or special meaning. Additionally, the present disclosure encompasses present and future known equivalents to the known components mentioned herein by way of illustration.

[0031] While specific reference may be made herein to IC fabrication, it should be clearly understood that the description herein has many other possible applications. For example, the embodiments described may be used to fabricate integrated optical systems, guidance and detection patterns for magnetic domain memories, liquid crystal display panels, thin-film magnetic heads, and the like. Those skilled in the art will appreciate that, in the context of these alternative applications, any use of the terms "wafer" or "die" herein should be considered interchangeable with the more general terms "substrate" and "target portion," respectively. The term "wafer" may generally refer to a large manufacturing unit (which may be the largest manufacturing unit), while the term "die" may be used to refer to a smaller manufacturing unit that may correspond to a lithographic pattern, a portion of a lithographic pattern, a plurality of lithographic patterns, and the like. A "die" may correspond to a portion of a "wafer," i.e., a "die" may be produced by sawing or otherwise dividing a "wafer." The term "die" should be considered interchangeable with the terms chip, chiplet, or other terms used for IC partitioning. A patterning device (e.g., a lithographic apparatus) may include or may form one or more patterns that may correspond to one or more dies. The pattern may be generated based on the pattern or design layout using a CAD (computer-aided design) process, often referred to as EDA (electronic design automation).

[0032] Reference Figures 1A to 1D, which is a schematic diagram illustrating an exemplary die bonding method consistent with an embodiment of the present disclosure. The exemplary die bonding method is depicted with respect to a reference set of axes. The reference axes are provided for ease of description only and should not be considered limiting. The included methods and apparatus are alternatively described with reference to a different set of axes (e.g., cylindrical coordinates, polar coordinates, etc.), a different origin (e.g., an origin in the donor die, an origin in the target, an origin between the donor die and the target, etc.), or a different orientation. The standard set of axes is selected so that the fabrication plane of the die (i.e., the wafer surface) is in the xy plane and wherein the fabrication direction is parallel or antiparallel to the z-axis for both the donor die and the target location.

[0033] like Figures 1A to 1D As shown in FIG, an exemplary die bonding method may involve a donor die 102 and a target die 104. The terms "donor" and "target" are used herein for ease of description. It should be understood that the terms "donor" and "donor" are provided for reference and are relative, and that an element described as corresponding to a "donor" may alternatively correspond to a "target," and vice versa. The donor die 102 may have an electrically active region 106. The electrically active region 106 may correspond to a through-hole (e.g., a through-silicon via (TSV)), an electrical contact line, a contact pad, a package pad, or other conductive region. The donor die 102 may have one or more electrically inactive regions (e.g., electrically insulating regions) outside the electrically active region 106. The electrically active region 106 may be recessed relative to other surfaces of the donor die 102 (as shown). The electrically active region 106 may correspond to a bonding contact (e.g., a source, drain, gate, etc.) with an electrical device (not shown) within the donor die 102. The target die 104 may also have an electrically active region 108 , which may have similar properties as the electrically active region 106 .

[0034] like Figure 1A , an exemplary die bonding method can involve aligning at least some of the electrically active areas 106 of the donor die 102 with at least some of the electrically active areas 108 of the target die 104. The exemplary die bonding method can involve contacting the donor die 102 with the target die 104 while maintaining alignment between the electrically active areas 106 and the electrically active areas 108. The alignment can be complicated by multiple layers of the donor die 102 or multiple layers of the target die 104, which can be optically opaque. Figures 1A to 1C A cross-sectional view depicting a portion of an exemplary die bonding method.

[0035] like Figure 1A As further shown in FIG, the donor die 102 and the target die 104 can be brought together along the z-axis, and the position of the donor die 102 or the target die 104 can be adjusted in the xy plane (eg, perpendicular to the z-axis). Figure 1B As shown in FIG, the donor die 102 and the target die 104 may be annealed after contacting. Annealing may be or include thermal annealing, electrical annealing, electrostatic process, van der Waals force process, etc. Figure 1C As shown in , annealing may cause physical or chemical changes in the electrically active region 106 of the donor die 102 or in the electrically active region 108 of the target die 104, which may cause physical or electrical contact between the electrically active regions 106 in the electrically active regions 108. Annealing may thus create electrical connectivity (e.g., integration) between the elements of the donor die 102 and the target die 104. This electrical connectivity may occur even if the electrically active region 106 is different from the electrically active region 108, e.g., has a different recess depth, is composed of a different material, has a different size, etc.

[0036] Figure 1D A plan view depicting an example die bonding method of the present disclosure. Figure 1D As shown in , the donor die 102 and the target die 104 can have alignment marks along the xy plane to facilitate overall alignment of the die. The alignment marks in the xy plane of the die (e.g., the donor die 102 or the target die 104) can reduce the area that can be used for circuitry. The photolithography alignment marks used during wafer fabrication can be placed in waste areas such as the area between chips, which can then be destroyed by sawing. Sawing in this article refers to the mechanical separation of areas of a wafer (e.g., manufacturing units) into smaller areas (e.g., dies or chips) that can include one or more operating units (e.g., logic devices, memory cells, etc.). Sawing can be performed using any appropriate method such as scribing and breaking, mechanical sawing, laser cutting, etc., and non-zero line width portions of the wafer volume may be destroyed when separating the dies (e.g., ground into powder or otherwise rendered inoperable for circuitry placement). Alternatively, the electrically active area 106 of the donor die 102 or the electrically active area 108 of the target die 104 ( Figure 1D ) or other surface features can serve as reference marks (e.g., alignment marks) for alignment of the donor die 102 and the target die 104. The donor die 102 and the target die 104 can be aligned in three dimensions before or during contact between the donor die 102 and the target die 104. For example, the donor die 102 or the target die 104 can be positioned or adjusted in the xy plane while the donor die 102 and the target die 104 are in contact. The donor die 102 or the target die 104 can be positioned or adjusted by operating a die actuator or other die-level component, such as by a piezoelectric stepper element, or by operating a wafer chuck or other wafer-level component, such as by a stepper element.

[0037] The position of the donor die 102 or the target die 104 can be adjusted with respect to up to six degrees of freedom. For example, given an origin at the center of the donor die 102, the donor die 102 can be adjusted by movement along the x-axis (e.g., in the positive x-direction or the negative x-direction), along the y-axis (e.g., in the positive y-direction or the negative y-direction), and along the z-axis (e.g., in the positive y-direction or the negative y-direction). The donor die 102 can also be rotationally adjusted with respect to each of those axes, e.g., rotation with respect to the x-axis, rotation with respect to the y-axis, and rotation with respect to the z-axis. That is, the donor die 102 can be adjusted by free rotation in a space supplemented by six different types of movement (where the movements listed above are provided as examples, but the movements can be described with respect to other axes).

[0038] Figures 2A to 2B is a schematic diagram illustrating a method of placing a die actuator. Figure 2A A cross-sectional view depicting a die actuator 202 placed on a support structure 204. The die actuator 202 may be a structure capable of supporting one or more donor dies (e.g., Figures 1A to 1D The die actuator 202 may support the donor die on one or more donor die chucks or other support structures. The die actuator 202 may electrostatically or otherwise secure the donor die to the one or more die chucks or other support structures. The die actuator 202 may have one or more adjustable elements (e.g., posts) that can be activated to adjust the position of the donor die. The die actuator 202 may be capable of adjusting the position of the donor die in up to six directions (e.g., with respect to six degrees of freedom). The die actuator 202 may be placed on the support structure 204 by a pick and place element 216. The pick and place element 216 may position the die actuator 202 at a given position on the support structure 204. The pick and place element 216 may be a chip shooter, a gravity-based placer, a suction (e.g., vacuum) or other hydraulic-based placer, etc. The pick and place element 216 may have an end effector or other element that contacts the die actuator. The end effector may include an adhesion element (e.g., an electrostatic clamp, a suction element) that allows the end effector to pick up and / or release the die actuator. The end effector may also include an adjustable or configurable clamping element (such as a gripper arm, etc.) for gripping the die actuator, such as those clamping elements that may not have a flat surface suitable for suction adhesion. The given position may be regular, i.e., with a periodicity (e.g., a periodicity P in the Y direction). Y and the periodicity P along the X direction X) occurs. The pick-and-place component 216 can also place the die actuator 202 on the support structure 204 at a given position along the Z direction (e.g., Δz). The pick-and-place component 216 can have inherent errors or inaccuracies in the size of the die actuator, the periodicity of the placement, the alignment features of the die actuator, and so on. As a result, the die actuator 202 may have irregular placement and / or inaccuracies relative to the desired position. The die actuator 202 will also be discussed further with reference to Figures 8-10.

[0039] The support structure 204 may be planar, such as a wafer, and may be considered a reconfigured wafer chuck in that it may be used to reconfigure a wafer from which a donor die is cut. The support structure 204 may be a planar structure other than a wafer or may otherwise correspond to the arrangement of the target die ( Figures 2A to 2B 204 ). The support structure 204 may be non-planar. For example, the support structure 204 may have one or more recessed or raised areas corresponding to the die actuators 202 . The support structure 204 may have one or more alignment marks 206 . The alignment marks 206 corresponding to the gratings are merely example alignment marks, as the alignment marks may alternatively have different or additional features. The alignment marks 206 may appear in areas not occupied by the die actuators 202 . The alignment marks 206 may be detectable optically or otherwise (such as via UV light, via X-ray inspection, via physical interlocking elements, etc.) from the top or bottom of the support structure 204 . For example, the support structure 204 may be optically transparent so that the alignment marks 206 may be observed from the positive Z direction or the negative Z direction.

[0040] Figure 2B A plan view of a die actuator 202 placed on a support structure 204 is depicted. The position of the die actuator 202 may be described with reference to one or more origins. For ease of description, the position of the die actuator 202 is described with reference to its expected position (e.g., as determined by the periodic P X and periodic P Y The position of each of the die actuators 202 can be described in free space by six coordinates, namely, Δx and Θx along the x-axis, Δy and Θy along the y-axis, and Δz and Θz along the z-axis (e.g., Figure 2A ). Angle Θi (where i is any of x, y, or z) corresponds to the angle of rotation of the donor die about the corresponding axis. Angle Θz and angle Θy may not be complementary because out-of-plane rotation may occur (e.g., along Θz). The position of the die actuator 202 may be limited by the accuracy and reproducibility of the pick and place element 216 and by the regularity of the support structure 204. Figure 2B , an alternative alignment mark 212 is shown.

[0041] Figures 3A to 3B is a schematic diagram illustrating a method of placing a donor die on a die actuator. Figure 3A A cross-sectional view depicts a donor die 302 on a die actuator 202 placed on a support structure 204. The donor die 302 can be any die suitable for heterogeneous integration (or homogeneous integration). The donor die 302 can be supported by the die actuator 202. The donor die 302 can be placed on the die actuator 202 by the pick-and-place component 216, or alternatively, by another pick-and-place component or another method (e.g., by using a chip shooter). In one embodiment, the donor die 302 can be attached to the die actuator 202 component, such as by backside bonding, before sawing the wafer containing the donor die 302. After sawing, the donor die 302 attached to the die actuator 202 can be placed on the support structure 204. The donor die 302 can be from a single wafer, from multiple wafers of the same type, or from different wafer types. In one embodiment, the donor die 302 can have substantially the same size. Donor dies 302 can each be supported by one of die actuators 202. In some embodiments, multiple of donor dies 302 can each be supported by one of die actuators 202. In some embodiments, some of die actuators 202 can be empty or otherwise not correspond to one of donor dies 302. The size of donor die 302 can be larger or smaller than the size of die actuator 202. Donor die 302 can be secured to die actuator 202 electrostatically or otherwise.

[0042] The pick and place element 216 may place the donor die 302 at a given position on the die actuator 202. The given position may be the same or different for each of the die actuators 202. For example, the pick and place element 216 may attempt to place the donor die 302 relative to the given position (e.g., by a periodic P in the Y direction). Y and the periodicity P along the X direction X The pick and place element 216 may attempt to place the donor die 302 on the die actuator 202 relative to the support structure 204 (given). In another example, the pick and place element 216 may attempt to place the donor die 302 on the die actuator 202 only relative to the position of the die actuator 202. The pick and place element 216 may or may not attempt to compensate for irregularities in the placement of the die actuator 202 when placing the donor die 302.

[0043] exist Figure 3AAlso shown is a position measurement device 208. Position measurement device 208 can be a camera, such as a two-dimensional camera, a two- or more-dimensional camera, an optical camera, or another measurement device. Position measurement device 208 can be composed of multiple position measurement devices, such as an in-plane measurement device that can measure position in the xy plane and an out-of-plane measurement device that can measure position or distance in the z direction. In one embodiment, position measurement device 208 includes a confocal microscope that measures depth. A confocal microscope can measure depth (e.g., position in the z direction) based on detecting the depth of the focal plane when focused on an element or surface. The confocal microscope can measure depth relative to other locations on the die, for example, it can detect changes in depth in the z direction across the die surface, or it can measure absolute depth, such as the distance of the die surface from the microscope. In one embodiment, position measurement device 208 can use superimposed diffraction or other diffraction-based methods, such as based on scattering through a grating within or on the die, to measure position, i.e., relative position or absolute position. In one embodiment, the position of the die can be determined based on a two-dimensional image of the die. For example, an x-offset, a y-offset, a rotation angle relative to the x-axis, or a rotation angle relative to the y-axis can be determined based on detection of an edge or side of the die, where the offset can be determined relative to a die actuator, a position on the support structure 204, or the like. In one embodiment, the position of the die can be determined based on a one-dimensional image of the die, such as acquired by an in-line camera. For example, an x-offset, a y-offset, a rotation angle relative to the x-axis, or a rotation angle relative to the y-axis can be determined based on a one-dimensional image (or quasi-one-dimensional image) acquired at a known position. The difference between the expected position and the actual position can be determined based on the difference between the expected position in the one-dimensional image and the actual position in the one-dimensional image. The position measurement device 208 can be operated in a scanning mode or from a fixed position relative to the support structure 204.

[0044] Figure 3B A plan view of a donor die 302 placed on a die actuator 202 and placed on a support structure 204 is depicted. The position of the donor die 302 may be described with reference to one or more origins. For ease of description, the position of the donor die 302 is referred to herein with reference to its intended position (e.g., by the die from the Figures 2A to 2B The periodicity P X and periodic P Y The position of each of the donor dies 302 can be described in free space by six coordinates, namely, Δx + δx and θx along the x-axis, Δy + δy and θy along the y-axis, and Δz + δz and θz along the z-axis (e.g., Figure 3A). Angle θi (where i is any of x, y, or z) corresponds to the rotation angle of donor die 302 about the corresponding axis. Because there can be out-of-plane rotation (e.g., Figure 3A y), so angle θz and angle θy may not be complementary. The position of donor die 302 may be limited by the accuracy and reproducibility of pick and place element 216, the placement of die actuator 202, and the regularity of support structure 204.

[0045] Figures 4A to 4B is a schematic diagram illustrating a method of obtaining a plurality of target positions. Figure 4A A cross-sectional view of a target die 412 on a die actuator 402 on a support structure 404 is depicted. The target die 412 is depicted as a single die, however, the target die 412 may alternatively be one or more continuous dies. For example, the target die 412 may be a target die of an unsawn wafer, including a completely or relatively unpatterned wafer. The target die 412 may be supported by one or more die actuators 402, or may be placed directly above the support structure 404. Figures 3A to 3B Target die 412 may be the same as or different from donor die 302. Target die 412 may be the same as donor die 302, or may be different, including corresponding to different types of circuitry, different nodes, memory versus logic, etc. Die actuator 402 may have one or more features as previously described with reference to die actuator 202. Support structure 404 may have one or more features as previously described with reference to support structure 204.

[0046] The die actuator 402 may be placed on the support structure 404 by a pick and place element, such as similar to the pick and place element 216. The target die 412 may be placed on the support structure 404 or the die actuator 402 by a pick and place element, such as the pick and place element 216. The desired position (e.g., the desired position of the target die 412 or the die actuator 402) may be regular, i.e., with a periodicity (e.g., a periodicity P along the Y direction). Y ' and the periodicity P along the X direction X ') appears. The pick and place element 216 may also place the target die 412 or die actuator 402 on the support structure 404 at a given position in the Z direction (e.g., Δz' or Δz'+δz'). The expected position may differ from the actual position due to inaccuracies and reproducibility issues of the pick and place element. The pick and place element may operate in conjunction with a position measurement device such as the position measurement device 208 (e.g., iteratively). The position measurement device 208 may be coupled to Figure 3A The position measurement devices 208 are the same or different.

[0047] The support structure 404 may be planar, such as a wafer. The support structure 404 may be in a manner similar to (e.g., Figure 2A The support structure 404 may be shaped in a complementary manner to the support structure 204 or vice versa. The support structure 404 may have one or more alignment marks 406. The alignment marks 406 corresponding to the gratings are only example alignment marks. The alignment marks 406 may complement ( Figure 2A The alignment mark 406 can be formed by the support structure 404 and the alignment mark 206. Figure 2A ) alignment of the support structure 204.

[0048] Figure 4B A plan view depicting a target die 412 placed on die actuator 402 and placed on support structure 404. As an additional example, Figure 4B The die actuator 402 is depicted as corresponding to a planar die actuator 402 rather than as Figure 4A 4. For example, if the target die 412 has a known thickness (e.g., planar) and only position adjustment within a plane is required, a planar die actuator 402 may be used. The position of the target die 412 may be described with reference to one or more origins. For ease of description, the position of the target die 412 is described with reference to its expected position (e.g., by the periodic P X and periodic P Y The position of each of the target dies 412 can be described in free space by six coordinates, namely, δx' and θx' along the x-axis, δy' and θy' along the y-axis, and Δz'+δz' and θz' along the z-axis (e.g. Figure 4A ). Angles θi correspond to the rotation angles of the target die 412 about the corresponding axis. Angles θz and θy may not be complementary because out-of-plane rotations may occur (e.g., along θz). The position of the target die 412 may be limited by the accuracy and reproducibility of the pick and place element 216, the placement of the die actuator 402, and the regularity of the support structure 404. The position of the target die 412 may be more accurate for a full wafer than for a sawn wafer. Figure 4B , an alternative alignment mark 416 is shown, which supplements Figure 2B An alternative alignment mark 212 is shown in FIG.

[0049] Figures 5A to 5B is a schematic diagram illustrating a method of adjusting the position of a donor die. Figure 5AA cross-sectional view of the donor die 302 on the die actuator 202 is depicted after adjustment of the position of the donor die 302. The donor die 302 may be adjusted (e.g., in position) by any suitable action of the die actuator 202. Example actions of the die actuator will be further discussed with reference to Figures 8-10.

[0050] The die actuator 202 may operate in conjunction with the position measurement device 208. The die actuator 202 may incrementally (or iteratively) adjust the position of the donor die 302 based on or in response to position information acquired by the position measurement device 208. The die actuator 202 may also or alternatively adjust the position of the donor die 302 based on the position information acquired by the target die (e.g., Figures 4A to 4B The die actuator 202 may attempt to move the donor die 302 to the desired position (e.g., to compensate for errors in placement of the die actuator 202). In some embodiments, the die actuator 202 may be aligned with the die actuator of the target die (e.g., Figures 4A to 4B The die actuator 202 cooperates with the target die 412 to align the donor die 302 with the target die at a location that may not be the intended location. The die actuator 202 may align the donor die 302 with respect to or without respect to a location on the support structure 204 (e.g., such as with or without reference to the alignment mark 206). The die actuator 202 may additionally or alternatively adjust the position of the die actuator 202 itself in one or more directions.

[0051] Figure 4B A plan view depicts donor die 302 placed on die actuator 202 after alignment and placed on support structure 204. The positions of donor die 302 may be described with reference to one or more origins. The position of each of donor die 302 may be described in free space by six coordinates, namely, δx and θx along the x-axis (where θx indicates parallelism with the x-axis), δy and θy along the y-axis (where θy indicates parallelism with the y-axis), and Δz+δz and θz along the z-axis (e.g., Δz+δz and θz). Figure 4A ), where θz indicates the parallelism between the support structure 204 and the xy longitudinal plane of the donor die 302. The position of the donor die 302 may be limited by the accuracy and reproducibility of the die actuator 202 and may still include placement errors, which may be smaller than possible placement errors when using pick and place components.

[0052] 6A to 6D is a schematic diagram illustrating steps in a method of placing a donor die on a target location. 6A to 6D is a cross-sectional view of the various steps of die placement. Figure 6ADepicts placing donor die 302 on target die 412 by bringing support structure 204 into proximity with support structure 404. Figure 6A , support structure 404 is shown as being proximate to support structure 204, however, the direction of proximate is relative, as support structure 204 is alternatively or additionally proximate to support structure 404. Figure 6A , support structure 404 is shown rotated (e.g., about the x-axis) to complement the position of support structure 204; however, either or both support structure 204 and support structure 404 may be rotated or translated before being brought into proximity. Support structure 404 may be aligned with support structure 204 (e.g., in the x-direction, in the y-direction, in the z-direction, rotatably, etc.) based on alignment marks, such as alignment mark 406 and alignment mark 206.

[0053] Figure 6B Depicted is the fine alignment of support structure 404 with support structure 204 as target die 412 contacts donor die 302. Adjustment of support structure 404, support structure 204, die actuator 202, or die actuator 402 can be used to provide fine alignment of target die 412 within donor die 302 as target die 412 contacts donor die 302. Alignment of donor die 302 with target die 412 can be accurate to within 200 nm. Alignment of donor die 302 with target die 412 when supported by die actuator 202 or die actuator 402 can be more accurate than alignment achievable solely through pick and place. Placement of donor die 302 onto target die 412 when supported by die actuator 202 or die actuator 402 can also (or alternatively) be faster than placement by a die bonder. The placement of the donor die 302 on the target die 412 when supported by the die actuator 202 or the die actuator 402 can be various dies that are not complete wafers, such as providing die placement for sawn wafers that cannot be placed, aligned or bonded by a wafer bonder, which may require the donor die 302 to be the same size as the target die 412 (e.g., this may be best suited for homogeneous integration).

[0054] Figure 6CThe support structure 204 is depicted as being removed after the target die 412 contacts the donor die 302. The contacting of the donor die 302 with the target die 412 can include adhesion (e.g., electrostatic adhesion, van der Waals attraction, etc.) or annealing of the donor die 302 and the target die 412. After the donor die 302 adheres to the target die 412, it can be released from the die actuator 202, including electrostatically releasing the target die 412. The release can include active disengagement between the die actuator 202 and the donor die 302, such as electrostatic repulsion. After releasing the donor die 302 from the die actuator 202, the support structure 204 can be moved to separate the die actuator 202 from the donor die 302. The removal of the support structure 204 is depicted along the Z direction, but the removal of the support structure 204 can alternatively or additionally be depicted along another direction. In some embodiments, removal of support structure 204 may include deconstruction or disassembly of support structure 204 .

[0055] Figure 6D The support structure 404 is depicted after the donor die 302 is attached to the contact die 412. The donor die 302 in the contact die 412 may be supported by another support structure (not depicted), such as a collection socket, a chip feeder wire, or the like. As described with reference to the release of the donor die 302 from the die actuator 202 and the support structure 204, the target die 412 may be actively or dynamically released from the die actuator 402 and the support structure 404. The donor die 302 and the contact die 412 may be annealed or bonded electrically, physically, chemically, or the like before or after the removal of the support structure 404 (or the removal of the support structure 204). Once bonded, the donor die 302 and the target die 412 may be used as a single unit, such as in a circuit system. The donor die 302 and the target die 412 may be further processed, such as via lithography, may be further analyzed, such as via electrical testing, may be further sawn, may be further integrated, including with additional dies (e.g., such as additional donor dies 302, additional target dies 412, additional dies of different types, etc.), may be packaged, and the like.

[0056] Figure 7 7 is a flow chart illustrating a method of die alignment. Each of these operations is described in detail below. The operations of method 700 presented below are intended to be illustrative. In some embodiments, the method 700 may be implemented with one or more additional operations not described and / or without one or more of the operations discussed. Figure 7The order in which the operations of method 700 are illustrated and described below is not intended to be limiting. In some embodiments, one or more portions of method 700 may be implemented (e.g., through simulation, modeling, etc.) in one or more processing devices (e.g., one or more processors). The one or more processing devices may include one or more devices that execute some or all of the operations of method 700 in response to instructions electronically stored on an electronic storage medium. The one or more processing devices may include one or more devices configured via hardware, firmware, and / or software specifically designed to perform, for example, one or more of the operations of method 700.

[0057] At operation 710, a plurality of target locations are obtained. The target locations may correspond to locations of a plurality of target dies. The target locations may correspond to a plurality of locations on a target wafer. The target locations may be locations (e.g., in three dimensions such as along the X, Y, and Z axes, in six directions such as along the X, Y, and Z axes and relative to rotation angles about those axes, etc.). The target locations may be a set of locations of, for example, two or more locations of, or on, a target (e.g., with respect to a plurality of locations). Figure 1A The region of the donor die will be bonded to the set of locations, similar to the electrically active region 108 of the donor die.

[0058] The plurality of target locations can be obtained from a target pattern, for example, from a plane of target locations. The plurality of target locations for measurement can be obtained, for example, from a prepared target die, a target wafer, etc. The plurality of target locations can be obtained in any suitable coordinate system, such as relative to one or more alignment marks on a target wafer, on a die actuator, on a support structure, etc.

[0059] In some embodiments, the die actuator can be placed on the support structure based on the obtained multiple target positions. That is, the multiple target positions can be used to inform the pick and place component when to place the multiple die actuators. In some embodiments, the donor die can be placed on the die actuator based on the obtained multiple target positions. That is, the multiple target positions can be used to inform the pick and place component when to place the multiple donor dies.

[0060] At operation 720, multiple donor die locations are obtained. The donor die locations can be obtained by measuring one or more positions of the donor die along one or more dimensions. The positions of the multiple donor dies can be measured in a plane (e.g., in the xy plane) via a first method and out of plane (e.g., along the z-direction) via a second method. For example, the positions of the multiple donor dies can be measured in a plane based on one or more images. The positions of the multiple donor dies can be obtained from a two-dimensional image, which can show the positions of edges or corners of the donor die relative to positions on the support structure or on the die actuator. The positions of the multiple donor dies can be obtained based on features on the exposed surface of the donor die (e.g., electrically active areas). These features of the donor die can be used as alignment marks or reference marks. In some embodiments, alignment marks can be included as exposed features of the donor die. The alignment marks can be added specifically for die bonding or can be alignment marks corresponding to previous preparation steps.

[0061] At operation 730, the positions of the plurality of donor dies are adjusted. Adjustments include situations where, for example, if the measured position corresponds to a target position within a threshold, the position is adjusted very little or substantially not adjusted after measurement. The positions of the plurality of donor dies may be adjusted by the action of a die actuator. The die actuator may adjust the length, position, angle of one or more supports (e.g., pillars) or other donor die supports that support the donor die chuck. The die actuator may be controlled, including electrically controlling the die actuator. This is done by one or more measurement systems, such as a measurement system that incorporates a position measurement element. The die actuator may be controlled by a system, such as one or more measurement systems, that also controls the pick and place elements. Adjustment of the positions of the plurality of donor dies may correspond to adjustment of one or more donor die chucks. Adjustment of the positions of the plurality of donor dies may correspond to adjustment of the positions of one or more donor die actuators.

[0062] Adjustment of the positions of the plurality of donor dies may include iterative measurement of the plurality of donor die locations, including when the adjustment occurs. In one or more embodiments, the iterative measurement and adjustment steps may be used for a threshold number of iterations (e.g., 1 iteration, 2 iterations, etc.). In one or more embodiments, the iterative measurement and adjustment steps may be used until a threshold donor die placement is reached, such as a minimum offset from an expected position. In one or more embodiments, the iterative adjustment may be triggered by a difference between the donor die placement and the expected position of the donor die exceeding a threshold. For example, a plurality of donor die locations may be obtained, the positions of the plurality of donor dies may be adjusted, and a plurality of adjusted donor die locations may be obtained. Based on a determination that the adjusted donor die locations meet the expected location within a threshold, the iteration of measurement and adjustment may be exited. Based on a determination that the adjusted donor die locations do not meet the expected location within a threshold, the iteration of measurement and adjustment may be continued.

[0063] At operation 740, a plurality of donor dies are placed on a plurality of target locations. The donor dies may be placed on the target locations by moving one or more support structures or one or more die actuators. The donor dies in the target locations may undergo self-alignment when the donor dies contact the target locations. For example, the donor dies may be offset relative to the target locations so that electrically active areas of the donor dies are attracted to certain areas of the target locations, such as electrically attractive areas. The plurality of donor dies may be adhered to the plurality of target locations. The plurality of donor dies may be bonded to the plurality of target locations, such as by annealing. The plurality of donor dies may be released from the plurality of die actuators or from the support structure.

[0064] In some embodiments, additional sets of donor dies can be placed on multiple die actuators. For example, if the target locations correspond to target locations for a target wafer, the target locations acquired for one of the target wafers can be applied to additional target wafers with the same manufacturing parameters. In another example, if multiple dies are to be stacked, the target locations for the second stack can be acquired when a first stacking layer occurs, e.g., the donor die locations for the first stacking layer can be used as target locations for a second stacking layer.

[0065] As described above, the method 700 (and / or other methods and systems described herein) is configured for alignment of multiple dies.

[0066] Figures 8A to 8B is a schematic diagram illustrating an example die actuator. Figure 8ACross-sectional view of an example die actuator consisting of a body 802, a die actuator fixture 804, a shear piezoelectric element 808, a die platform 810, and a die fixture 812. A donor die 820 and a support structure 830 are also depicted. The body 802 of the die actuator may include one or more die actuator electrodes 840. The body 802 may have dimensions of approximately 10 mm x 10 mm in the xy plane. The body 802 may be made of metal, a semiconductor material such as silicon, silicon dioxide, etc. The body 802 may be manufactured by additive or subtractive manufacturing. The body 802 may be manufactured by 3D printing. The sidewalls of the body 802 may be taller or shorter than the height of the die platform 810. The die actuator fixture 804 may be an electrostatic fixture. The die actuator fixture 804 may be a capacitive fixture. The die actuator clamp can include a shear piezoelectric material between two clamps (which can be electrostatic clamps, capacitive clamps, etc.), wherein each clamp and the shear piezoelectric element can be independently operated. The die actuator clamp 804 can apply a high voltage (which can be a constant or varying signal) to the surface of the die actuator's body 802, to the surface of the shear piezoelectric element 808, and to the surface of the die platform 810 to induce attraction between the die actuator clamp 804 and the surfaces of the body 802, the die platform 810, or the shear piezoelectric element 808. When engaged, the die actuator clamp 804 can prevent the body 802, the die platform 810, or the shear piezoelectric element 808 from moving relative to each other (e.g., preventing the die platform 810 from sliding relative to the body 802). When released, the die actuator clamp 804 can slide over the surfaces of the body 802, the die platform 810, or the shear piezoelectric element 808. The die actuator fixture 804 is operable to create microstepper functionality between the shear piezoelectric element 808 , the body 802 , and the die platform 810 .

[0067] The support structure 830 may include one or more controller electrodes 842 that can operate in conjunction with the die actuator electrodes 840 to supply power to and control the die actuators. The one or more controller electrodes 842 can supply power to the die actuator electrodes, such as inductively, capacitively (e.g., via capacitive charging), or the like. Although the one or more controller electrodes 842 and the one or more die actuator electrodes 840 are shown as being separated by the depth of the body 802 and the support structure 830, it should be understood that the one or more controller electrodes can be surface electrodes and the one or more die actuator electrodes can be surface electrodes. The one or more controller electrodes can supply power, actuation signals, control signals, etc., including supplying them through different one or more controller electrodes. The signals can be wireless, impedance-based, capacitive, voltage-based, current-based, etc. For example, a given controller electrode among the one or more controller electrodes 842 can supply power, while another controller electrode among the one or more controller electrodes 842 can supply a control signal for a given die actuator fixture 804. The one or more die actuator electrodes 840 can also correspond to different elements of the die actuator. For example, a given controller electrode among the one or more die actuator electrodes 840 can correspond to clamping of a given die actuator fixture, while another controller electrode among the one or more die actuator electrodes 840 can correspond to a release effect for a given die actuator fixture. Signals that cause die actuator actuation can be provided to the die actuator electrodes 840 via the one or more controller electrodes 842. For example, the die actuator electrodes 840 corresponding to the piezoelectric element 808 and the die actuator fixture 804 can then be actuated (e.g., turned on or off) based on digital or analog signals from the one or more controller electrodes 842.

[0068] The relationship between one or more controller electrodes 842 and one or more die actuator electrodes 840 can be known (e.g., based on measured placement of the die actuator body 802 on the support structure 830) or can be determined, such as by subsequently providing a test signal to each of the one or more controller electrodes 842 and observing (e.g., experimentally) a corresponding effect on the die actuator, which can include clamping, release, piezoelectric action, etc.

[0069] Support structure 830 can be a wafer with patterned electrodes, such as silicon dioxide on a silicon wafer. Support structure 830 can be a printed circuit board (PCB), including a ceramic PCB. Support structure 830 can be a wafer chuck with embedded electrodes, such as one made of Teflon or another inert material.

[0070] The die actuator can be operated by adjusting the position of one or more supports of the die clamp 812. The die clamp 812 can be an electrostatic clamp that is used to clamp or release the donor die 820. The die clamp 812 can apply a high voltage (which can be a constant or varying signal) to the donor die 820 to induce electrostatic attraction between the die clamp 812 and the donor die 820 to provide adhesion of the donor die 820 to the die clamp 812. The die clamp 812 can be actuated by a voltage signal received at the die actuator electrode 842. The die platform 810 is depicted as being supported by at least two legs 816 (shown in a cross-sectional view), which in turn are supported by the die actuator clamp 804 and the shear piezoelectric element 818. The position of the legs 816 supporting the die platform 810 can be adjusted using shear piezoelectric elements 808, which can operate as a stepper in conjunction with two or more of the die actuator grippers 804. The stepper function, in which two or more die actuator grippers 804 corresponding to the legs 816 supporting the die platform 810 alternately grasp and release, can be used to eliminate hysteresis in the movement of the die platform 810, where shear piezoelectric elements can be susceptible to hysteresis and drift. The legs 816 can be made of a metal or other material capable of withstanding the bending and forces consistent with the placement of the donor die 820 on the die platform 810 and the placement of the donor die 820 on the target die (e.g., capable of withstanding pressure without breaking or capable of rebounding after deformation). While two legs 816 are shown supporting the die platform 810, it should be understood that more legs 816 can be used, and those legs 816 may not be coplanar with each other in the y-plane (shown for ease of illustration only). Legs 816 can also be configured to withstand forces from die placement, such as by incorporating leaf springs, other spring elements, flexures, and the like. Legs 816 can be formed by wire electrical discharge machining (wire-EDM), by laser cutting, and the like. Legs 816 can have an angle relative to the base of the die platform (e.g., a foot) or relative to the die platform (e.g., relative to the donor die). The thickness of legs 816 can be adjusted to adjust the stiffness of die platform 810.

[0071] Figure 8B yes Figure 8A FIG. 1 is a cross-sectional view of a portion of an example die actuator. Figure 8B A portion of body 802 , shear piezoelectric element 808 , and a portion of die platform 810 are depicted. Figure 8BAlso depicted are three die actuator fixtures 804A to 804C that can operate together to form a microstepper that adjusts the position of the die platform 810 by adjusting the position of the legs 816. The shear piezoelectric element 808 can be modified, such as by applying an electrical potential. The shear piezoelectric element 808 is shown as being able to bend in the y-direction, but this depiction is by way of example only and the shear piezoelectric element 808 can be modified in other ways, such as in size (e.g., by extension of contraction) or in different directions. The shear piezoelectric element 808 can experience drift or hysteresis (such as can be a property of some types of piezoelectric materials). To mitigate these factors, the shear piezoelectric element 808 can be used in conjunction with a stationary support or other portion of the body 802 to operate as a stepper.

[0072] In stepper mode, the die actuator clamps 804A-804C can clamp and release in a cycle to adjust the position of the base of the legs 816 and thus adjust the position of the donor die (e.g., Figure 8A820). For example, to move the legs 816 toward the positive y-direction, the die actuator clamp 804A can be released (e.g., receiving a signal to release the electrostatic clamp or other clamp, which can be a voltage drop from an on voltage to an off voltage), while the die actuator clamps 804A to 804C remain clamped (e.g., receiving a signal to maintain the clamps, which can be an on voltage signal or remain the same). Once the die actuator clamp 804A is released, the shear piezoelectric element 808 can be activated (e.g., receiving a voltage change signal, such as a switch from a large positive voltage to a large negative voltage), which can cause the shear piezoelectric element 808 to move from its initial position to an activated position, such as the position shown by the dashed parallelogram 850. The dashed parallelogram 850 is provided as an example only, and the activated position of the piezoelectric element 808 can be determined by the material and initial configuration of the shear piezoelectric element 808. Actuation of the shear piezoelectric element 808 can thus move the legs 816 (and the die platform 810) in the positive y-direction as illustrated by the dashed line diagram 852 (corresponding to the position of the die actuator clamp 804B) and the dashed line diagram 854 (corresponding to the position of the die platform 810). While the shear piezoelectric element 808 remains taut, the die actuator clamp 804A can clamp (e.g., can receive a signal to initiate clamping, which can be a voltage switch from an off voltage to an on voltage), which can hold the legs 816 and the die platform 810 in the new position. Once the die actuator clamp 804A clamps, the die actuator clamp 804B or 804C can release (e.g., can receive a signal to release clamping, which can be a voltage drop from an on voltage to an off voltage). This can utilize shear piezoelectric element 808 to deactivate (e.g., deactivate, which can correspond to receiving a voltage change signal, such as returning to near zero voltage or changing from a large negative voltage to a large positive voltage) and return to an initial or release confirmation. Piezoelectric element 808 can be activated and deactivated (or activated in one direction and then activated in the other direction instead of deactivating) during a cycle of clamping and releasing of die actuator clamps 804A-804C to allow legs 816, die platform 810, and donor die (e.g., Figure 8A The position of the donor die 820) is "stepped" or moved incrementally.

[0073] Multiple piezoelectric elements, such as piezoelectric element 808, may be used to provide legs 816, die platform 810, and a donor die (eg, Figure 8A820). For example, there may be one or more die actuator fixtures and additional rows of shear piezoelectric elements (not shown) that can move the base of the legs in the x-direction. In one embodiment, multiple shear piezoelectric elements can be used to move the legs 816 in multiple directions at once when the die actuator fixture 804A is disengaged, such as by activating shear piezoelectric element 808 in the y-direction and also activating a shear piezoelectric element (not shown) in the x-direction. In one embodiment, the shear piezoelectric elements can be used to move the legs 816 in multiple directions one at a time (e.g., continuously).

[0074] Figure 9 is a schematic diagram illustrating the relationship between an example pick and place system and an example die actuator. Figure 9 is a cross-sectional view of an example die actuator (e.g., die actuator of FIG. 8 ) placed on a support structure (e.g., support structure 830 of FIG. 8 ). Figure 2A The pick-and-place element 216 (of the die actuator) moves the die actuator. The die actuator can be picked up, carried, placed, or otherwise manipulated by the pick-and-place element using a dedicated end effector, such as end effector 902. End effector 902 can be configured to contact the body of the die actuator (e.g., body 802 in FIG. 8 ). End effector 902 can adhere to or attract the body of the die actuator electrostatically, by using suction, through a hydraulic effect, or the like. End effector 902 can have opening or closing elements (e.g., gripper arms or other sliding elements) that can be used to select or retain the die actuator. End effector 902 can have dimensions similar to the outer dimensions of the die actuator body 810. The die actuator body 810 can have sidewalls protruding in the z-direction to enable end effector 902 to adhere to the die actuator. End effector 902 can have one or more release mechanisms to release the die actuator body after it is placed on the support structure. As depicted, end effector 902 includes an adhesion element identified by dashed ellipse 910. The adhesion element may be an electrostatic, suction, capacitive, or other adhesion element. The adhesion element may be any suitable adhesion element, including reference Figure 2AThe pick and place elements 216 of the die actuator may be those adhesive elements described. The adhesive elements are depicted as interacting with the vertical plane of the body 810 of the die actuator, but may alternatively interact with other planes or a single plane of the die actuator. For example, the die actuator may include a horizontal plane or base with which the pick and place elements interact via suction. In another example, the die actuator may include vertical portions that surround the donor die 820 on two sides in the x-direction and on two sides in the y-direction. In this example, the end effector 902 may include sliding elements that grip each of the four surrounding planes, such as by van der Waals forces, using friction pads, etc. The sliding elements may be loosened (e.g., expanded outward) to release the die actuator.

[0075] FIG. 10A to FIG. 10B is a schematic diagram illustrating an example die actuator. Figure 10A is a plan view of an example die actuator 1000, and Figure 10Bis an orthogonal view of an example die actuator 1000. The example die actuator 1000 has a die platform 1010, which may also include a die clamp or other component for securing a donor die (or target die). The example die actuator 1000 has three supports (e.g., legs, structures, etc.) 1030A through 1030C that support the die platform 1010. The three supports 1030A through 1030C are notched springs attached to the die platform at a 45° angle (although other angles may be used). The notched springs can be relatively flat, with an example length of 3 mm and an example thickness of 0.1 mm. The notches in the springs (identified by the dashed oval 1040 in support 1030B) can be formed by a void cut into the planar surface of the springs. The notches in the springs can reduce the stiffness of the springs. The width of the unnotched portion of the spring sheet (e.g., the narrow area between the notched gaps) can be adjusted to provide the desired stiffness. The notched spring sheet can have pre-formed folds (e.g., bends) that conform to the notches. Each of the three supports 1030A-1030C is in turn supported by a foot (e.g., foot 1020A-1020B), which can be an interface with the support platform or rest on the body of the die actuator. The three supports 1030A-1030C are also connected to the foot 1020A-1020B at a 45° angle (although other angles can be used). In the example die actuator 1000, the three supports 1030A-1030C provide positioning adjustment for the die platform 1010 (and therefore the donor die supported by the die platform 1010). Each of the three supports 1030A-1030C can be adjusted by moving the corresponding leg 1020A-1020C. Each of the legs 1020A-1020C can be adjusted in at least two orthogonal directions along the xy plane (e.g., in the x-direction and in the y-direction, or along another set of two axes rotated relative to the x- and y-axes). By moving each of the legs 1020A-1020C, the die platform 1010 can also be adjusted in an out-of-plane direction (e.g., in the z-direction). For example, the die platform 1010 can be raised in the z-direction by moving each of the legs 1020A-1020C inward, and can be lowered by moving each of the legs 1020A-1020C outward. The three supports 1030A-1030C are depicted as leaf springs, but may alternatively or additionally be any other suitable supports. The three supports 1030A-1030C depicted may be the minimum number of supports required to adjust the position of the donor die, for example, with respect to six degrees of freedom. However, more supports may be used. Alternatively, fewer supports may be used if the donor die is to be adjusted with respect to only three degrees of freedom (e.g., not considering rotation, only degrees of freedom in the xy plane). The die actuator 1000 may be constructed by mechanical processing, micromachining, or the like.The die actuator 1000 may be constructed from a single material (eg, by destructive machining), from multiple materials (eg, by additive machining), or from a combination of similar and dissimilar materials.

[0076] Figure 11 1 is a flow chart illustrating a method of die actuator adjustment. Each of these operations is described in detail below. The operations of method 1100 presented below are intended to be illustrative. In some embodiments, method 1100 may be implemented with one or more additional operations not described and / or without one or more of the operations discussed. Additionally, in Figure 11 The order in which the operations of method 1100 are illustrated and described below is not intended to be limiting. In some embodiments, one or more portions of method 1100 may be implemented (e.g., through simulation, modeling, etc.) in one or more processing devices (e.g., one or more processors). The one or more processing devices may include one or more devices that execute some or all of the operations of method 1100 in response to instructions electronically stored on an electronic storage medium. The one or more processing devices may include one or more devices configured via hardware, firmware, and / or software specifically designed to perform, for example, one or more of the operations of method 1100.

[0077] At operation 1110, a donor die site is obtained. Any suitable method may be used, including the previously referenced Figure 7 The donor die sites are obtained as described in operation 720. The donor die sites may be measured or may be obtained from a storage device.

[0078] At operation 1120, a target location corresponding to the donor die site is obtained. Any suitable method may be used, including the previously described methods. Figure 7 The target location is obtained as described in operation 710. The target location can be measured or obtained from a storage device. The target location corresponding to the donor die can be identified from the plurality of target locations.

[0079] In some embodiments, the donor die position and the target position can be obtained in reverse order, and the order of operations provided herein is illustrative only and should not be considered limiting. In some embodiments, the expected donor die position is determined based on the target position. For example, the corresponding position of the donor die (i.e., the expected donor die position) can be determined based on the difference between the ideal target position and the actual target position. In some embodiments, the difference between the donor die position and the expected donor die position can be determined. The difference can be determined with respect to one or more directions, such as with respect to up to six degrees of freedom. The difference between the expected donor die position and the donor die position can be used to determine an adjustment factor in up to six degrees of freedom, where the adjustment factor can be a distance, a rotation angle, etc.

[0080] At operation 1130, the position of the donor die is adjusted. The position of the donor die can be adjusted by a piezoelectric actuator or other actuator. The position of the donor die can be adjusted by applying electrical actuation (or other actuation) to one or more supports to extend or shorten the supports. The position of the donor die can be adjusted by applying electrical actuation to the legs of one or more supports (such as via a piezoelectric microstepper) to move the base of one or more supports in one or more directions at a time. The position of the donor die can be adjusted based on the location of the donor die, the target location, the relationship between the location of the donor die and the target location, etc. Any appropriate method can be used, such as reference Figure 7 10 , the position of the donor die is adjusted. In some embodiments, the position of the donor die can be measured (or otherwise obtained) after the adjustment. The position of the donor die can be measured and adjusted iteratively. In some embodiments, the position of the donor die can be tracked following the adjustment to determine drift of one or more adjustment actuators or to improve future adjustments.

[0081] As described above, the method 1100 (and / or other methods and systems described herein) is configured for die position adjustment.

[0082] Figure 12is a diagram of one or more example computer systems CS that can be used in the operations described herein. The computer system CS includes a bus BS or other communication mechanism for communicating information, and a processor PRO (or multiple processors) coupled to the bus BS for processing information. The computer system CS also includes a main memory MM, such as random access memory (RAM) or other dynamic storage, coupled to the bus BS for storing information and instructions to be executed by the processor PRO. The main memory MM can also be used to store temporary variables or other intermediate information during execution of instructions by the processor PRO. The computer system CS also includes a read-only memory (ROM) or other static storage device coupled to the bus BS for storing static information and instructions for the processor PRO. A storage device SD, such as a magnetic disk or optical disk, is provided and coupled to the bus BS for storing information and instructions.

[0083] The computer system CS can be connected by a bus BS to a display DS, such as a cathode ray tube (CRT), or a flat-panel or touch-panel display, for displaying information to the computer user. An input device ID, including alphanumeric and other keys, is connected to the bus BS for communicating information and command selections to the processor PRO. Another type of user input device is a cursor control CC, such as a mouse, trackball, or cursor direction keys, for communicating directional information and command selections to the processor PRO and for controlling the movement of a cursor on the display DS. This input device typically has two degrees of freedom along two axes: a first axis (e.g., x) and a second axis (e.g., y), allowing the device to specify a position in a plane. A touch-panel (screen) display can also be used as an input device.

[0084] In some embodiments, portions of one or more methods described herein may be performed by a computer system CS in response to a processor PRO executing one or more sequences of one or more instructions contained in a main memory MM. These instructions may be read from another computer-readable medium (such as a storage device SD) into the main memory MM. Execution of the sequence of instructions contained in the main memory MM causes the processor PRO to perform the process steps (operations) described herein. One or more processors in a multi-processing arrangement may also be used to execute the sequence of instructions contained in the main memory MM. In some embodiments, hard-wired circuitry may be used in place of or in combination with software instructions. Therefore, the description herein is not limited to any specific combination of hardware circuitry and software.

[0085] As used herein, the terms "computer-readable medium" and / or "machine-readable medium" refer to any medium that participates in providing instructions to the processor PRO for execution. Such media can take many forms, including but not limited to non-volatile media, volatile media, and transmission media. Non-volatile media include, for example, optical or magnetic disks, such as storage devices SD. Volatile media include volatile memory, such as main memory MM. Transmission media include coaxial cables, copper wire, and optical fiber, including the wires comprising bus BS. Transmission media can also take the form of sound or light waves, such as those generated during radio frequency (RF) and infrared (IR) data communications. Computer-readable media can be non-transitory, such as floppy disks, flexible magnetic disks, hard disks, magnetic tape, any other magnetic medium, CD-ROMs, DVDs, any other optical media, punch cards, paper tape, any other physical medium with a pattern of holes, RAM, PROMs and EPROMs, FLASH-EPROMs, or any other memory chip or cartridge. Non-transitory computer-readable media can have instructions recorded thereon. The instructions, when executed by a computer, may perform any of the operations described herein.For example, a transitory computer-readable medium may include a carrier wave or other propagated electromagnetic signal.

[0086] Various forms of computer-readable media can be involved when one or more sequences of one or more instructions are carried to processor PRO for execution. For example, the instructions can initially be carried on a disk of a remote computer. The remote computer can load instructions into its volatile memory and use a modem to send instructions via a telephone line. The modem local to the computer system CS can receive the data on the telephone line and use an infrared transmitter to convert the data into infrared signals. The infrared detector connected to the bus BS can receive the data carried in the infrared signal and place the data on the bus BS. The bus BS carries the data to the main memory MM, and the processor PRO obtains and executes the instructions from the main memory. The instructions received by the main memory MM can optionally be stored on the storage device SD before or after being executed by the processor PRO.

[0087] The computer system CS may also include a communication interface CI coupled to the bus BS. The communication interface CI provides a bidirectional data communication connection to a network link NDL, which is connected to a local area network LAN. For example, the communication interface CI may be an Integrated Services Digital Network (ISDN) card or a modem to provide a data communication connection to a corresponding type of telephone line. As another example, the communication interface CI may be a local area network (LAN) card to provide a data communication connection to a compatible LAN. A wireless link may also be implemented. In any such embodiment, the communication interface CI sends and receives electrical, electromagnetic, or optical signals that carry digital data streams representing various types of information.

[0088] The network link NDL typically provides data communication with other data devices via one or more networks. For example, the network link NDL may provide a connection to the host computer HC via a local area network LAN. This may include providing data communication services via the global packet data communication network (now commonly referred to as the "Internet" INT). The local area network LAN (Internet) may use electrical, electromagnetic, or optical signals to carry digital data streams. The signals passing through the various networks and the signals on the network data link NDL and through the communication interface CI are exemplary carrier forms for conveying information, carrying digital data to and from the computer system CS.

[0089] The computer system CS can send messages and receive data (including program code) via a network, a network data link NDL, and a communication interface CI. In the example of the Internet, the host computer HC can transmit requested code for an application program via the Internet INT, the network data link NDL, the local area network LAN, and the communication interface CI. For example, such a downloaded application program can provide all or part of the methods described herein. The received code can be executed by the processor PRO upon receipt and / or stored in a storage device SD or other non-volatile storage for later execution. In this way, the computer system CS can obtain application code in the form of a carrier wave.

[0090] Embodiments of the present disclosure are defined in the following numbered aspects:

[0091] Aspect 1: A method for die placement, comprising:

[0092] obtaining a plurality of target locations for a plurality of donor dies;

[0093] measuring positions of the plurality of donor dies, the plurality of donor dies being supported by a plurality of die actuators;

[0094] adjusting positions of the plurality of donor dies to substantially correspond to the plurality of target positions using the plurality of die actuators; and

[0095] The plurality of donor dies are placed on the plurality of target locations.

[0096] Aspect 2: The method according to aspect 1, wherein measuring the positions of the plurality of donor dies comprises:

[0097] placing the plurality of donor dies onto the plurality of die actuators, the plurality of die actuators being supported by a support structure; and

[0098] The positions of the plurality of donor dies relative to the support structure are measured.

[0099] Aspect 3: The method according to aspect 2, wherein measuring the positions of the plurality of donor dies further comprises:

[0100] The plurality of die actuators are placed on the support structure based on a plurality of target positions for the plurality of donor dies.

[0101] Aspect 4: The method of aspect 2, wherein placing the plurality of die actuators on the support structure comprises placing the plurality of die actuators on the support structure using a pick and place tool, the support structure being configured to substantially correspond to the plurality of target locations.

[0102] Aspect 5: The method according to any one of aspects 2 to 4, wherein placing the plurality of donor dies further comprises:

[0103] determining values of a quality metric for a plurality of donor dies; and

[0104] Based on a determination that the value of the quality metric satisfies a threshold, the plurality of donor dies are selected from the plurality of donor dies for placement.

[0105] Aspect 6: The method according to aspect 1, wherein adjusting the positions of the plurality of donor dies using the plurality of die actuators comprises:

[0106] Positions of a plurality of donor dies supported by the donor die chucks of the plurality of die actuators are adjusted by actuating an adjustable support supporting the donor die chuck.

[0107] Aspect 7: The method of aspect 6, wherein the positions of the plurality of donor dies are adjustable with respect to six degrees of freedom.

[0108] Aspect 8: A method according to Aspect 1, wherein obtaining multiple target positions for the multiple donor tube dies includes obtaining multiple target positions for the multiple donor tube dies in up to six degrees of freedom, and wherein measuring the positions of the multiple donor tube dies includes measuring the positions of the multiple donor tube dies in up to six degrees of freedom.

[0109] Aspect 9: The method of aspect 1, wherein obtaining a plurality of target locations for the plurality of donor dies comprises:

[0110] A plurality of target locations for the plurality of donor dies are measured.

[0111] Aspect 10: The method according to aspect 1, wherein adjusting the positions of the plurality of donor dies comprises:

[0112] Determining whether the positions of the plurality of donor dies correspond to the plurality of target positions; and adjusting the positions of the plurality of donor dies by actuating adjustable supports of the plurality of die actuators based on the determination that the positions of the plurality of donor dies do not correspond to the plurality of target positions.

[0113] Aspect 11: The method according to aspect 1, wherein placing the plurality of donor dies on the plurality of target locations further comprises:

[0114] disengaging the plurality of donor dies from the plurality of die actuators; and

[0115] The plurality of donor dies are bonded to the plurality of target locations.

[0116] Aspect 12: The method according to aspect 11, further comprising:

[0117] placing a second plurality of donor dies onto the plurality of die actuators;

[0118] measuring positions of the second plurality of donor dies;

[0119] adjusting positions of the second plurality of donor dies to substantially correspond to the plurality of target positions using the plurality of die actuators; and

[0120] The second plurality of donor dies are placed on the plurality of target locations.

[0121] Aspect 13: The method according to aspect 11, further comprising:

[0122] obtaining a second plurality of target locations for a second plurality of donor dies;

[0123] placing the second plurality of donor dies onto the plurality of die actuators;

[0124] measuring positions of the second plurality of donor dies;

[0125] adjusting positions of the second plurality of donor dies to substantially correspond to the second plurality of target positions using the plurality of die actuators; and

[0126] The second plurality of donor dies are placed on the second plurality of target locations.

[0127] Aspect 14: The method according to aspect 1, further comprising:

[0128] The metal contacts of the plurality of donor dies are annealed to the metal contacts on the plurality of target locations.

[0129] Clause 15: The method of clause 1, wherein the plurality of target locations comprises a plurality of target dies.

[0130] Clause 16: The method of clause 1, wherein measuring the positions of the plurality of donor dies comprises measuring locations of contacts on the plurality of donor dies.

[0131] Aspect 17: The method according to Aspect 16, wherein measuring the location of the contact portion includes measuring the location of the contact portion based on an optical image.

[0132] Aspect 18: The method according to Aspect 16, wherein measuring the location of the contact portion comprises measuring the location of the contact portion based on confocal imaging.

[0133] Aspect 19: A die actuator comprising:

[0134] a donor die chuck; and

[0135] At least three adjustable supports support the donor die chuck, the position of the donor die chuck being controllable by actuation of the adjustable supports.

[0136] Aspect 20: The die actuator of aspect 19, wherein the adjustable support comprises a piezoelectric stepper, and wherein the position of the donor die chuck can be controlled by electrical adjustment of the piezoelectric stepper.

[0137] Aspect 21: The die actuator of aspect 19, wherein the position of the donor die chuck is controllable in up to six degrees of freedom.

[0138] Aspect 22: The die actuator of aspect 19, further comprising an electrostatic clamp, the donor die chuck being capable of holding a donor die via the electrostatic clamp.

[0139] Aspect 23: The die actuator of aspect 19, further comprising an electrode capable of receiving a signal for actuation of an element of the adjustable support.

[0140] Aspect 24: The die actuator of aspect 23, wherein the first electrode is electrically connected to the piezoelectric element, the first electrode being capable of receiving a signal corresponding to mechanical actuation of the piezoelectric element.

[0141] Aspect 25: The die actuator of aspect 23, wherein the second electrode is electrically connected to the clamping element, the second electrode being capable of receiving a signal corresponding to engagement of the clamping element or release of the clamping element.

[0142] Aspect 26: The die actuator of aspect 23, wherein the signal used to actuate the element of the adjustable support is an inductive signal.

[0143] Aspect 27: The die actuator of aspect 23, wherein the signal used to actuate the element of the adjustable support is a capacitive signal.

[0144] Aspect 28: A support structure comprising a plurality of die actuators according to aspects 19 to 27.

[0145] Aspect 29: A device comprising:

[0146] a plurality of die actuators, wherein the die actuators include donor die chucks each for supporting an associated donor die, the positioning of each donor die chuck being controllable by actuation of the donor die chucks; and

[0147] a measurement system functionally coupled to the plurality of die actuators and configured to:

[0148] obtaining a plurality of target locations for a plurality of donor dies;

[0149] obtaining positions of a plurality of donor dies supported by the donor die chuck; and

[0150] The positions of the plurality of donor dies are adjusted by actuating the donor die chuck so that the positions of the plurality of donor dies substantially correspond to the plurality of target positions.

[0151] Aspect 30: The apparatus according to aspect 29, wherein the die actuator further comprises at least three adjustable supports for supporting each donor die chuck, the position of each donor die chuck being controllable by actuating the adjustable supports.

[0152] Aspect 31: The apparatus according to Aspect 30, wherein the measurement system includes a processor configured to adjust the positions of the plurality of donor dies by actuating the adjustable support so that the positions of the plurality of donor dies substantially correspond to the plurality of target positions.

[0153] Clause 32: The apparatus of clause 29, wherein the measurement system comprises a processor configured to adjust positions of the plurality of donor dies by actuating the die actuator so that the positions of the plurality of donor dies substantially correspond to the plurality of target positions, the measurement system further comprising a camera configured to obtain an optical image of the plurality of donor dies.

[0154] Wherein positions of the plurality of donor dies are determined based on an optical image of the plurality of donor dies.

[0155] Aspect 33: The apparatus according to aspect 32, wherein the measurement system further comprises a second camera configured to obtain optical images of the plurality of target locations.

[0156] The multiple target positions are determined based on the optical images of the multiple target positions.

[0157] Clause 34: The apparatus of clause 29, wherein the measurement system comprises a processor configured to adjust positions of the plurality of donor dies by actuating the donor die chuck so that the positions of the plurality of donor dies substantially correspond to the plurality of target positions, and the measurement system further comprises a confocal microscope configured to obtain topography of the plurality of donor dies.

[0158] Wherein positions of the plurality of donor dies are determined based on topography of the plurality of donor dies.

[0159] Aspect 35: The apparatus according to aspect 34, wherein the measurement system further comprises a second confocal microscope configured to obtain the topography of the plurality of target locations.

[0160] The multiple target positions are determined based on their topography.

[0161] Aspect 36: The apparatus according to Aspect 29, further comprising:

[0162] a pick and place tool, said pick and place tool being functionally coupled to said measuring system,

[0163] The device comprises a processor; and

[0164] one or more non-transitory machine-readable media having instructions thereon that, when executed by the processor, are configured to:

[0165] The pick and place tool is controlled to place the plurality of donor dies on the plurality of die actuators.

[0166] Clause 37: The apparatus of clause 36, the instructions, when executed by the processor, further configured to control the pick and place tool to place the plurality of die actuators on a support structure.

[0167] Aspect 38: The apparatus according to Aspect 29, further comprising:

[0168] An alignment tool is functionally coupled to the measurement system, the alignment tool being configured to align a structure supporting the plurality of die actuators with a structure supporting the plurality of target locations.

[0169] Aspect 39: The apparatus according to Aspect 29, further comprising:

[0170] a wafer moving tool functionally coupled to the measurement system, the wafer moving tool being configured to:

[0171] positioning at least one of a structure supporting the plurality of die actuators and a structure supporting the plurality of target locations; and

[0172] The plurality of donor dies are brought into contact with the plurality of target locations by moving at least one of a structure supporting the plurality of die actuators and a structure supporting the plurality of target locations via the wafer movement tool.

[0173] Aspect 40: The apparatus according to Aspect 29, further comprising:

[0174] A bonding tool is configured to bond the plurality of donor dies to the plurality of target locations.

[0175] While the concepts disclosed herein may be used for wafer fabrication on substrates such as silicon wafers, it should be understood that the disclosed concepts may be used with any type of manufacturing system (eg, a manufacturing system for fabrication on substrates other than silicon wafers).

[0176] Furthermore, combinations and subcombinations of the disclosed elements may include separate embodiments. For example, one or more operations described above may be included in separate embodiments, or they may be included together in the same embodiment.

[0177] The above description is intended to be illustrative rather than restrictive. Accordingly, those skilled in the art will appreciate that modifications can be made as described without departing from the scope of the claims set forth below.

Claims

1. A device comprising: a plurality of die actuators, wherein the die actuators include donor die chucks each for supporting an associated donor die, the positioning of each donor die chuck being controllable by actuation of the donor die chucks; and a measurement system functionally coupled to the plurality of die actuators and configured to: obtaining a plurality of target locations for a plurality of donor dies; obtaining positions of a plurality of donor dies supported by the donor die chuck; and The positions of the plurality of donor dies are adjusted by actuating the donor die chuck so that the positions of the plurality of donor dies substantially correspond to the plurality of target positions.

2. The device according to claim 1, wherein The die actuator further comprises at least three adjustable supports for supporting each donor die chuck, and the positioning of each donor die chuck can be controlled by actuating the adjustable supports.

3. The device according to claim 2, wherein The measurement system includes a processor configured to adjust positions of the plurality of donor dies by actuating the supporting adjustable support so that the positions of the plurality of donor dies substantially correspond to the plurality of target positions.

4. The device according to claim 1, wherein The measurement system includes a processor configured to adjust positions of the plurality of donor dies by actuating the die actuator so that the positions of the plurality of donor dies substantially correspond to the plurality of target positions, and a camera configured to obtain an optical image of the plurality of donor dies. Wherein, positions of the plurality of donor dies are determined based on the optical images of the plurality of donor dies.

5. The apparatus of claim 4, the measurement system further comprising a second camera configured to obtain optical images of the plurality of target locations, in, The plurality of target locations are determined based on the optical images of the plurality of target locations.

6. The apparatus according to claim 1, wherein The measurement system includes a processor configured to adjust positions of the plurality of donor dies by actuating the donor die chuck so that the positions of the plurality of donor dies substantially correspond to the plurality of target positions, and the measurement system further includes a confocal microscope configured to obtain topography of the plurality of donor dies. Wherein, the positions of the plurality of donor dies are determined based on the topography of the plurality of donor dies.

7. The apparatus according to claim 6, wherein the measurement system further comprises a second confocal microscope configured to obtain the topography of the plurality of target locations. in, The plurality of target locations are determined based on their topography.

8. The apparatus according to claim 1, further comprising: a pick and place tool, said pick and place tool being functionally coupled to said measuring system, The device comprises a processor; and one or more non-transitory machine-readable media having instructions thereon that, when executed by the processor, are configured to: The pick and place tool is controlled to place the plurality of donor dies on the plurality of die actuators.

9. The apparatus of claim 8, the instructions, when executed by the processor, further configured to control the pick and place tool to place the plurality of die actuators on a support structure.

10. The apparatus according to claim 1, further comprising: An alignment tool is functionally coupled to the measurement system, the alignment tool being configured to align a structure supporting the plurality of die actuators with a structure supporting the plurality of target locations.

11. The apparatus according to claim 1 , further comprising: a wafer moving tool functionally coupled to the measurement system, the wafer moving tool being configured to: positioning at least one of a structure supporting the plurality of die actuators and a structure supporting the plurality of target locations; and The plurality of donor dies are brought into contact with the plurality of target locations by moving at least one of a structure supporting the plurality of die actuators and a structure supporting the plurality of target locations via the wafer movement tool.

12. The apparatus of claim 1 , further comprising: A bonding tool is configured to bond the plurality of donor dies to the plurality of target locations.

13. A method for die placement, comprising: obtaining a plurality of target locations for a plurality of donor dies; measuring positions of the plurality of donor dies, the plurality of donor dies being supported by a plurality of die actuators; adjusting positions of the plurality of donor dies to substantially correspond to the plurality of target positions using the plurality of die actuators; as well as The plurality of donor dies are placed on the plurality of target locations.

14. The method according to claim 13, wherein: Measuring the positions of the plurality of donor dies includes: placing the plurality of donor dies onto the plurality of die actuators, the plurality of die actuators being supported by a support structure; and The positions of the plurality of donor dies relative to the support structure are measured.

15. The method according to claim 14, wherein Measuring the positions of the plurality of donor dies further comprises: The plurality of die actuators are placed on the support structure based on a plurality of target positions for the plurality of donor dies.

Images