Semiconductor device

Abstract

A semiconductor device is provided with: a substrate (12); a semiconductor chip (14) disposed on the base material (12); a side wall (16) disposed on the base material (12) and surrounding the semiconductor chip (14); and a cover (18) that is disposed on the side wall (16) and above the semiconductor chip (14), forms a hollow structure (22) together with the base material (12), the semiconductor chip (14), and the side wall (16), and is provided with a through-hole (20) that penetrates into the hollow structure (22).

Description

Technical Field

[0001] The present disclosure relates to a semiconductor device. Background Art

[0002] Some semiconductor devices use hollow packages, which are hollow structures. A semiconductor chip is mounted inside the hollow package. When using such packages, moisture and gas trapped in the hollow space can cause condensation inside the package.

[0003] Patent Document 1 discloses a semiconductor device in which a portion of a portion where a package lid is bonded is ventilated to prevent condensation or the like inside the package.

[0004] Some semiconductor devices use molded packages filled with resin. The resin is filled so that it covers the semiconductor chip. Because these packages use resin, they cannot maintain airtightness, allowing moisture and gas to infiltrate from the surrounding area. Furthermore, the adhesive and resin used also contain moisture and gas. These factors can contribute to moisture and gas reaching the periphery of the semiconductor chip.

[0005] Patent Document 2 discloses a semiconductor device in which through-holes are provided in resin to prevent moisture from reaching the periphery of a semiconductor chip, thereby discharging moisture and the like to the outside.

[0006] Patent Document 1: Japanese Patent Application Laid-Open No. 2002-124589

[0007] Patent Document 2: Japanese Patent Application Laid-Open No. 9-219471

[0008] However, the semiconductor device described in Patent Document 1 has a problem with a small opening area for the vent, as the vent is provided in a portion of the adhesive cover. Furthermore, in the semiconductor device described in Patent Document 2, the through-hole does not reach the semiconductor chip, but only the island portion of the lead terminal. This also results in a small opening area for the vent. A small opening area for the vent results in insufficient discharge of moisture and gas. Summary of the Invention

[0009] The present disclosure has been made to solve the above-mentioned problems, and an object thereof is to obtain a semiconductor device that can sufficiently discharge moisture and gas.

[0010] The first semiconductor device involved in the present disclosure includes: a substrate; a semiconductor chip, which is arranged on the substrate; a side wall, which is arranged on the substrate and surrounds the semiconductor chip; and a cover, which is arranged on the side wall and above the semiconductor chip, and forms a hollow structure together with the substrate, the semiconductor chip and the side wall, and a through portion is provided on the cover that penetrates into the hollow structure.

[0011] The second semiconductor device involved in the present disclosure includes: a semiconductor substrate having a semiconductor element formed on its surface; a sidewall arranged on the surface and surrounding the semiconductor element; and a cover arranged on the sidewall and above the semiconductor element, and forming a hollow structure together with the surface and the sidewall, and a through portion is provided on the sidewall to penetrate into the hollow structure.

[0012] The second semiconductor device involved in the present disclosure includes: a substrate; a semiconductor chip arranged on the substrate; and a sealing resin formed on the substrate and covering the semiconductor chip, wherein a through portion is provided in the sealing resin, which exposes the semiconductor chip and penetrates between mutually opposing side surfaces of the sealing resin.

[0013] According to the present disclosure, a semiconductor device capable of sufficiently discharging moisture and gas can be obtained. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 This is a top view of the semiconductor device according to the first embodiment.

[0015] Figure 2 This is a cross-sectional view of the semiconductor device according to the first embodiment.

[0016] Figure 3 This is a cross-sectional view of the semiconductor device according to the first embodiment.

[0017] Figure 4 This is a graph showing the increase in drain leakage current before and after the humidity resistance test.

[0018] Figure 5 It is a top view of the semiconductor device according to the second embodiment.

[0019] Figure 6 This is a cross-sectional view of a semiconductor device according to the second embodiment.

[0020] Figure 7 This is a cross-sectional view of a semiconductor device according to the second embodiment.

[0021] Figure 8 This is a cross-sectional view of a semiconductor device according to a third embodiment. DETAILED DESCRIPTION

[0022] Implementation Method 1

[0023] The semiconductor device 10 according to the first embodiment is shown in FIG. Figures 1 to 3 . Figure 1 It is a top view. Figure 2 yes Figure 1 AA cross-sectional view, Figure 3 yes Figure 1The semiconductor device 10 includes a substrate 12, a semiconductor chip 14, a side wall 16, a cover 18, a lead 24, and a lead terminal 26. The semiconductor device 10 includes a hollow structure 22. Figure 1 , the side wall 16 is shown in perspective for illustration purposes.

[0024] The base material 12 is made of, for example, resin.

[0025] A semiconductor chip 14 is disposed on the substrate 12. The semiconductor chip 14 is a chip manufactured using a semiconductor process and may be an active element or a passive element, or may be a MEMS (Micro Electro Mechanical Systems).

[0026] A side wall 16 is disposed on the substrate 12. The side wall 16 is disposed so as to surround the semiconductor chip 14. The side wall 16 is made of, for example, resin.

[0027] A lid 18 is disposed on sidewall 16 and above semiconductor chip 14. Base material 12, semiconductor chip 14, sidewall 16, and lid 18 form a hollow structure 22. Hollow structure 22 has dimensions of 8 mm x 8 mm x 1.5 mm. The surface of semiconductor chip 14 is exposed within hollow structure 22. Lid 18 is made of metal, for example.

[0028] The cover 18 is provided with a through portion 20 that penetrates the hollow structure 22. A plurality of through portions 20 are provided.

[0029] The opening of through-hole 20 is circular in shape. The diameter of the circle of the opening in through-hole 20 is preferably 0.5 mm or greater and 1 mm or less. Setting the diameter to 0.5 mm or greater improves the ability to remove moisture and gas. Setting the diameter to 1 mm or less prevents the intrusion of large foreign matter and deformation of semiconductor chip 14, leads 24, etc. Furthermore, electrical short circuits caused by the intrusion of conductive foreign matter can be prevented.

[0030] One end of the lead 24 is connected to an electrode of the semiconductor chip 14, and the other end is connected to a lead terminal 26. The lead terminal 26 is led out to the outside.

[0031] This section describes a humidity test conducted on a semiconductor device equipped with a GaN HEMT (High Electron Mobility Transistor). The humidity test conditions were 130°C and 85% humidity, with the voltages applied to the drain and gate terminals at 30V and -5V, respectively. The test lasted 300 hours. Four semiconductor devices were prepared, each with 0, 3, 10, and 20 through-holes of 0.5mm in diameter. The increase in drain leakage current after 300 hours was measured. The voltages applied to the drain and gate terminals during the drain leakage current measurement were 3V and -5V, respectively.

[0032] The increase in drain leakage current before and after the humidity test is shown in Figure 4 . According to the results, as the number of through-holes increases, the increase in drain leakage current decreases. This is because the more through-holes there are, the more moisture and gas are discharged from the package. In addition, it can be seen that as long as there are more than 10 through-holes, the increase in drain leakage current is sufficiently small. Since the area of the opening part when there are 10 through-holes is 1.96mm 2 Therefore, the opening area of the through-hole 20 is preferably 2 mm 2 above.

[0033] As described above, according to this embodiment, since the through portion 20 is provided in the cover, a semiconductor device capable of sufficiently discharging moisture and gas can be obtained.

[0034] Furthermore, the sidewall 16 may be formed integrally with the base 12 or with the cover 18. Furthermore, the shape of the opening of the through-hole 20 is not limited to a circle. For example, it may be a rectangle (including a square), a polygon, or even an ellipse.

[0035] Implementation Method 2

[0036] The semiconductor device 40 according to the second embodiment is shown in FIG. Figures 5 to 7 . Figure 5 It is a top view. Figure 6 yes Figure 5 AA cross-sectional view, Figure 7 yes Figure 5 BB cross-sectional view. The semiconductor device 40 includes a semiconductor substrate 58, a side wall 46, and a cover 48. The semiconductor device 40 has a wafer level package (WLP) structure. Figure 5 , the side wall 46 is shown in perspective for illustration purposes.

[0037] A semiconductor element 62 is formed on the surface of a semiconductor substrate 58. The semiconductor element 62 may be an active element or a passive element, or may be a MEMS (Micro Electro Mechanical Systems). The semiconductor substrate 58 is formed by laminating a GaN layer on a SiC substrate, for example.

[0038] The sidewall 46 is arranged on the surface of the semiconductor substrate 58. The sidewall 46 is arranged so as to surround the semiconductor element 62. The sidewall 46 is made of resin, for example.

[0039] A cover 48 is disposed on the sidewall 46 and above the semiconductor element 62. The surface of the semiconductor substrate 58, the sidewall 46, and the cover 48 form a hollow structure 52. The surface of the semiconductor element 62 is exposed inside the hollow structure 52. The cover 48 is made of, for example, resin.

[0040] The side wall 46 is provided with a through portion 50 that penetrates the hollow structure 52. A plurality of through portions 50 are provided.

[0041] The shape of the opening portion of the through-hole 50 is a rectangle (including a square) having sides perpendicular to the surface of the semiconductor substrate 58. The rectangle extends from the uppermost part to the lowermost part of the side wall 46. The length of the side of the rectangle parallel to the surface of the semiconductor substrate 58 is preferably not less than 0.5 mm and not more than 1 mm. By setting the length of the side to be not less than 0.5 mm, the effect of discharging moisture and gas is improved. By setting the length of the side to be not more than 1 mm, the intrusion of foreign matter larger than the side can be prevented, and the deformation of the semiconductor element 62, etc. can be prevented. In addition, electrical short circuits caused by the intrusion of conductive foreign matter can also be prevented. The combined area of the opening portions of the through-hole 50 is preferably 2 mm 2 By setting the opening area of the through-hole 50 to 2 mm 2 The above can improve the discharge effect of moisture and gas.

[0042] A patterning method is used to form sidewalls 46. Sidewalls 46 are formed by patterning resin. The mask pattern used for patterning is a pattern in which no resin is layered in the area where through-holes 50 are to be formed. Forming through-holes 50 using this patterning method eliminates the need for additional steps.

[0043] The semiconductor element 62 is connected to the through-hole 64 , and the through-hole 64 is connected to a back surface electrode 66 formed on the back surface of the semiconductor substrate 58 .

[0044] As described above, according to this embodiment, since the through portion 50 is provided in the side wall 46 , a semiconductor device capable of sufficiently discharging moisture and gas can be obtained.

[0045] Implementation 3

[0046] A cross-sectional view of a semiconductor device 70 according to the third embodiment is shown in FIG. Figure 8 The semiconductor device 70 includes a substrate 72, a semiconductor chip 14, a sealing resin 98, leads 84, and lead terminals 86. The semiconductor device 70 includes a molded package structure sealed with resin.

[0047] The base material 72 is made of, for example, resin.

[0048] A semiconductor chip 14 is disposed on the substrate 72. The semiconductor chip 14 is a chip manufactured using a semiconductor process and may be an active element or a passive element. Alternatively, it may be a MEMS (Micro Electro Mechanical Systems).

[0049] A sealing resin 98 covering the semiconductor chip 14 is disposed on the substrate 72. The sealing resin 98 is provided with a through portion 80 penetrating between mutually opposing side surfaces of the sealing resin 98. The through portion 80 extends from Figure 8 The through portion 80 penetrates the sealing resin 98 in the direction from the front of the paper. The through portion 80 exposes the surface of the semiconductor chip 14.

[0050] The height of the through-hole 80 is preferably not less than 0.5 mm and not more than 1 mm. By setting the height to be not less than 0.5 mm, the effect of discharging moisture and gas is improved. By setting the height to be not more than 1 mm, the intrusion of foreign matter larger than the height can be prevented, and the deformation of the semiconductor chip 14 and the like can be prevented. In addition, electrical short circuits caused by the intrusion of conductive foreign matter can also be prevented. The area of the opening portion of the through-hole 80 is preferably 2 mm in total. 2 By setting the opening area of the through-hole 80 to 2 mm 2 The above can improve the discharge effect of moisture and gas.

[0051] To form through-portion 80, an organic material film having chemical properties different from those of sealing resin 98 is first patterned at the portion that will become through-portion 80. Next, sealing resin 98 is formed to cover the organic material film. The organic material film is then dissolved and removed, forming through-portion 80. Alternatively, a method is also available in which a cap-shaped sealing resin 98 having a recess is attached to substrate 72 using an adhesive. In this method, the recessed portion becomes through-portion 80.

[0052] As described above, according to this embodiment, since the through portion 80 is provided in the cover, a semiconductor device capable of sufficiently discharging moisture and gas can be obtained.

[0053] Description of Reference Numerals

[0054] 10, 40, 70...semiconductor device; 12, 72...base material; 14...semiconductor chip; 16, 46, 76...sidewall; 18, 48...lid; 20, 50, 80...through portion; 22, 52...hollow structure; 58...semiconductor substrate; 62...semiconductor element; 98...sealing resin.

Claims

1. A semiconductor device, wherein: The semiconductor device comprises: substrate; a semiconductor chip, disposed on the substrate; a sidewall, disposed on the substrate and surrounding the semiconductor chip; as well as a cover, which is disposed on the side wall and above the semiconductor chip, and forms a hollow structure together with the substrate, the semiconductor chip and the side wall; The cover is provided with a through portion penetrating to the hollow structure.

2. The semiconductor device according to claim 1, wherein The opening of the through portion is in the shape of a circle.

3. The semiconductor device according to claim 2, wherein The diameter of the circle is 0.5 mm or more and 1 mm or less.

4. A semiconductor device, wherein: The semiconductor device comprises: A semiconductor substrate having semiconductor elements formed on its surface; a sidewall disposed on the surface and surrounding the semiconductor element; as well as a cover, which is arranged on the side wall and above the semiconductor element, and forms a hollow structure together with the surface and the side wall; The side wall is provided with a through portion penetrating to the hollow structure.

5. The semiconductor device according to claim 4, wherein The opening of the through portion has a rectangular shape having sides perpendicular to the surface, and the rectangle extends from the uppermost portion to the lowermost portion of the side wall. The semiconductor device according to claim 5 , wherein: The length of the side of the rectangle parallel to the surface is 0.5 mm or more and 1 mm or less.

7. A semiconductor device, wherein: The semiconductor device comprises: substrate; a semiconductor chip, disposed on the substrate; as well as A sealing resin is disposed on the substrate and covers the semiconductor chip. The sealing resin is provided with a through portion that exposes the surface of the semiconductor chip and penetrates between mutually opposing side surfaces of the sealing resin.

8. The semiconductor device according to claim 7, wherein The height of the through portion is greater than or equal to 0.5 mm and less than or equal to 1 mm.

9. The semiconductor device according to any one of claims 1 to 8, wherein The opening area of the through-hole is 2 mm 2 above.

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