Semiconductor device and power conversion device

Abstract

A semiconductor device is provided with: a semiconductor element having a main electrode and a signal electrode; a sealing resin that seals the semiconductor element; a conductive member having a protruding portion that protrudes from a lower surface facing the semiconductor element and is connected to the main electrode; a signal terminal having a main body portion and a main body portion side surface, one end of the main body portion being bonded to the signal electrode of the semiconductor element via a bonding material, the other end extending to the outside of the sealing resin and facing the lower surface of the conductive member, and the main body portion side surface facing the side surface of the protruding portion; and an insulating heat conduction member disposed between the conductive member and the signal terminal, the conductive member and the signal terminal having a recessed portion between the lower surface of the conductive member and the protruding portion and / or between the main body portion and the side surface of the main body portion.

Description

Technical Field

[0001] The present invention relates to a semiconductor device and a power conversion device. Background Art

[0002] Semiconductors inevitably generate heat during operation, and particularly when large currents flow, requiring a sufficient cooling mechanism. Patent Document 1 discloses a semiconductor device comprising: a semiconductor element having a main electrode and a signal pad; a sealing body that seals the semiconductor element; a conductive member connected to the main electrode of the semiconductor element within the sealing body and exposed on the surface of the sealing body; a signal terminal, one end of which is bonded to the signal pad of the semiconductor element via a bonding layer within the sealing body and the other end of which protrudes from the sealing body; and a supporting member disposed on the conductive member within the sealing body and supporting the signal terminal, the signal terminal being provided with a constricted portion having a locally reduced cross-sectional area along its length, the supporting member being in contact with the region from the one end of the signal terminal to the constricted portion, the supporting member being made of an insulating material having a higher thermal conductivity than the material of the sealing body. Prior art literature Patent Literature

[0003] Patent Document 1: Japanese Patent Application Publication No. 2020-096085 Summary of the Invention Problems to be solved by the invention

[0004] In the invention described in Patent Document 1, there is room for improvement in cooling of semiconductors in semiconductor devices. Technical means to solve the problem

[0005] A semiconductor device according to a first embodiment of the present invention comprises: a semiconductor element having a main electrode and a signal electrode; a sealing resin that seals the semiconductor element; a conductive member having a protrusion that protrudes from a lower surface opposite to the semiconductor element and is connected to the main electrode; a signal terminal having a main body and a main body side surface, one end of the main body being bonded to the signal electrode of the semiconductor element via a bonding material, and the other end extending to the outside of the sealing resin and facing the lower surface of the conductive member, the main body side surface facing the side surface of the protrusion; and an insulating heat-conductive member arranged between the conductive member and the signal terminal, the conductive member and the signal terminal having a recess in at least one of between the lower surface of the conductive member and the protrusion and between the main body and the main body side surface. A power conversion device according to a second aspect of the present invention includes the above-mentioned semiconductor device and a main conversion circuit that converts input power and outputs the converted power. Effects of the Invention

[0006] According to the present invention, the heat dissipation performance and insulation properties of a semiconductor device can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1 This is a circuit diagram of a semiconductor device. Figure 2 It is a perspective view of a semiconductor device. Figure 3 This is an exploded perspective view of a semiconductor device. Figure 4 yes Figure 2 Section IV-IV in . Figure 5 yes Figure 2 VV cross-section diagram in. Figure 6 yes Figure 5 Magnified view of section C in FIG. Figure 7 This is an appearance diagram of the second conductive member. Figure 8 This is an enlarged view of portion C in the first modification. Figure 9 This is an enlarged view of portion C in the second modification. Figure 10 This is a diagram showing a power conversion device in a third modification. DETAILED DESCRIPTION

[0008] ―Implementation Method― Below, refer to Figures 1 to 7 Embodiments of a semiconductor device will be described.

[0009] Figure 1 This is a circuit diagram of a semiconductor device 300. The semiconductor device 300 includes a first element 200U, a second element 200L, a third element 210U, and a fourth element 210L as semiconductor elements. The first element 200U and the second element 200L are IGBTs (insulated gate bipolar transistors). The third element 210U and the fourth element 210L are diodes. The first element 200U, the second element 200L, the third element 210U, and the fourth element 210L may alternatively be FETs (field effect transistors) or the like. When using FETs, semiconductor elements using SiC (silicon carbide) may also be used.

[0010] The semiconductor device 300 includes an upper arm 301 and a lower arm 302. The upper arm 200 includes a first element 200U, a third element 210U, a positive electrode terminal 311, and a signal terminal 340. The lower arm 210 includes a second element 200L, a fourth element 210L, a negative electrode terminal 312, and a signal terminal 340. The positive electrode terminal 311 and the negative electrode terminal 312 are connected to a capacitor or the like located outside the semiconductor device 300, thereby supplying power to the semiconductor device 300 from the outside.

[0011] The signal terminal 340 is connected to the control substrate and controls the switching operation of the first element 200U and the second element 200L. The semiconductor device 300 includes an AC terminal 313 and an intermediate connection portion 303. The intermediate connection portion 303 electrically connects the upper arm 301 and the lower arm 302. The intermediate connection portion 303 is electrically connected to the AC terminal 313. The AC terminal 313 outputs current to the outside of the semiconductor device 300. In addition, Figure 1 The semiconductor device 300 shown has a 2-in-1 structure including two sets of IGBTs and diodes, but may also have a 1-in-1 structure including only one set of IGBTs and diodes.

[0012] Figure 2 3 is a perspective view of the semiconductor device 300. Figure 2 In the following figures, mutually orthogonal X, Y, and Z axes are defined to clarify the correspondence between the figures. The upper arm 301 and lower arm 302 of the semiconductor device 300 are arranged side by side in the Y-axis direction. Specifically, the upper arm 301 is arranged on the positive side of the Y-axis, and the lower arm 302 is arranged on the negative side of the Y-axis. The majority of the structure of the semiconductor device 300 is sealed with a sealing resin 380. The positive terminal 311, the negative terminal 312, the AC terminal 313, and one end of the signal terminal 340 are exposed from the sealing resin 380.

[0013] Figure 3 is an exploded perspective view of the semiconductor device 300. Figure 3 In the figure, the sealing resin 380 covering most of the semiconductor device 300 is omitted. Figure 3 The observation angle and Figure 2 The semiconductor device 300 includes two first conductive members 320 (shown in the lower portion of the figure) and two second conductive members 330 (shown in the upper portion of the figure). A set of the first conductive member 320 and the second conductive member 330 are required as components of the upper arm 301 and the lower arm 302, respectively. If the semiconductor device 300 is a 1-in-1 system that only comprises either the upper arm 301 or the lower arm 302, the semiconductor device 300 includes only one set of the first conductive member 320 and the second conductive member 330.

[0014] The first element 200U and the third element 210U are sandwiched between the first conductive member 320 and the second conductive member 330 constituting the upper arm 301 . The second element 200L and the fourth element 210L are sandwiched between the first conductive member 320 and the second conductive member 330 constituting the lower arm 302 .

[0015] The first element 200U and the second element 200L have a first main electrode 201, a second main electrode 202, and a signal electrode 203, respectively. The third element 210U and the fourth element 210L have a third main electrode 211 and a fourth main electrode 212, respectively. The first main electrode 201 and the third main electrode 211 are bonded to the first conductive member 320 using a first bonding material 350. The second main electrode 202 and the fourth main electrode 212 are bonded to the second conductive member 330 using a second bonding material 351. The signal electrode 203 is bonded to the signal terminal 340 using a third bonding material 352.

[0016] A positive terminal 311 is connected to the first conductive member 320 constituting the upper arm 301, shown on the positive side of the Y axis. An AC terminal 313 is connected to the first conductive member 320 constituting the lower arm 302, shown on the negative side of the Y axis. A negative terminal 312 is positioned near the first conductive member 320 constituting the lower arm 302 and has a negative terminal connection portion 316 on the side closest to the first conductive member 320. The AC terminal 313 has an intermediate terminal 317.

[0017] The intermediate terminal 317 is arranged to extend toward the upper arm 301. The second conductive member 330 has a terminal connection portion 332. The negative terminal connection portion 316 is bonded to the terminal connection portion 332 of the second conductive member 330 constituting the lower arm 302 using a fourth bonding material 353. The intermediate terminal 317 is bonded to the terminal connection portion 332 of the second conductive member 330 constituting the upper arm 301 using a fifth bonding material 354.

[0018] The first bonding material 350, the second bonding material 351, the third bonding material 352, the fourth bonding material 353, and the fifth bonding material 354 are each solder or sintered material. The first bonding material 350, the second bonding material 351, the third bonding material 352, the fourth bonding material 353, and the fifth bonding material 354 can have the same composition or different compositions. The first conductive member 320 and the second conductive member 330 can be metal plates such as copper and aluminum, or can be insulating substrates having wiring layers and insulating layers.

[0019] The signal terminal 340 is bonded to the second conductive member 330 via an insulating heat-conducting member 360. The insulating heat-conducting member 360 is made of a resin with strong adhesive properties. This resin contains a heat-conducting filler, which improves thermal conductivity between the signal terminal 340 and the insulating heat-conducting member 360. The insulating heat-conducting member 360 is preferably formed into a sheet for ease of handling. The insulating heat-conducting member 360 is bonded to the signal terminal 340 and the second conductive member 330 by applying pressure while in close contact. Applying pressure reduces gaps at the bonding interface, improving insulation and heat dissipation performance.

[0020] Figure 4 yes Figure 2 However, in Figure 4 In the figure, the scale of the Z axis is different from that of other figures. Figure 4 In the figure, the near end is the positive direction of the X axis, the right side is the positive direction of the Y axis, and the top is the positive direction of the Z axis. Since the first element 200U and the third element 210U constituting the upper arm 301 are arranged in parallel in the X axis direction, Figure 4 Similarly, since the second element 200L and the fourth element 210L constituting the lower arm 302 are arranged side by side in the X-axis direction, Figure 4 Overlapping at different viewing angles.

[0021] The first conductive member 320 is bonded to the first bonding material 350 on the positive side of the Z axis. The surface of the first conductive member 320 opposite to the first bonding material 350, that is, the surface on the negative side of the Z axis, is referred to as the first heat dissipation surface 321. The first heat dissipation surface 321 is exposed from the sealing resin 380. The second conductive member 330 is bonded to the second bonding material 351 on the negative side of the Z axis. The surface of the second conductive member 330 opposite to the second bonding material 351, that is, the surface on the positive side of the Z axis, is referred to as the second heat dissipation surface 331. The second heat dissipation surface 331 is exposed from the sealing resin 380.

[0022] The first and second heat dissipation surfaces 321 and 331 are thermally connected to a cooler (not shown) via an insulating member, thereby dissipating heat generated by the first, second, third, and fourth elements 200U, 200L, 210U, and 210L. For example, an insulating heat-conductive material and a cooler may be attached to the surfaces of the first and second heat dissipation surfaces 321 and 331. Alternatively, an insulating heat-conductive material may be attached to the surfaces of the first and second heat dissipation surfaces 321 and 331, and thermally connected to the cooler via a heat-conductive material such as grease.

[0023] Figure 5 yes Figure 2 VV cross-section diagram in. Figure 5In the figure, the right side is the positive direction of the X-axis, the inner side is the positive direction of the Y-axis, and the top is the positive direction of the Z-axis. The portion of the second conductive member 330 that protrudes in the negative direction of the Z-axis is referred to as the protrusion 338, and the structure after removing the protrusion 338 from the second conductive member 330 is referred to as the base portion 330B. The side surface of the protrusion 338 is referred to as the protrusion side surface 337, and the end surface of the base portion 330B on the negative side of the Z-axis is referred to as the base portion lower surface 333. The center position of the protrusion 338 on the X-axis is referred to as the base center 335. The protrusion side surface 337 is parallel to the Z-axis.

[0024] The second conductive member 330 has a recess 334 as the root of the protrusion 338, and the recess 334 is recessed at the position where the signal terminal 340 is configured and at a symmetrical position relative to the center 335 of the base. The root of the protrusion 338 refers to the position where the side surface 337 of the protrusion intersects with the lower surface 333 of the base. The second conductive member 330 can be manufactured by various methods, but in order to improve productivity, it is preferably formed by drawing or extrusion. In this case, as described above, by providing the recess 334 at a symmetrical position with the center 335 of the base as the center line, the uneven force on the second conductive member 330 can be eliminated, thereby making production easier. In addition, it is not a necessary configuration for the recess 334 to exist at a symmetrical position with the center 335 of the base as the center line. The recess 334 facing the side where the signal terminal 340 is present is necessary, but the opposite side, that is, Figure 5 The recess 334 on the right side may not exist.

[0025] Figure 5 The box shown below is an enlarged view of the vicinity of the end portion of the base portion 330B on the negative side of the X axis. The insulating heat conduction member 360 is bonded to the base portion lower surface 333. The end portion 362 of the insulating heat conduction member 360 on the negative side of the X axis is bonded to a position that does not protrude from the side surface 336 of the conductive member. In other words, when the semiconductor device 300 is viewed from the positive side of the Z axis, the insulating heat conduction member 360 cannot be seen even when the sealing resin 380 is not present. By eliminating any overflow of the insulating heat conduction member 360, damage to the insulating heat conduction member 360 can be suppressed, making handling during the manufacture of the semiconductor device 300 easier and improving the productivity of the semiconductor device 300.

[0026] The signal terminal 340 includes a terminal body 344, a first bent portion 342, a second bent portion 343, a low rigidity portion 341, and a terminal portion 345. The terminal body 344 is bonded to the insulating heat conducting member 360. The second bent portion 343 is located inside the end portion 362 of the insulating heat conducting member 360. Figure 5If the end portion 362 and the second bent portion 343 are positioned in the same X-axis direction, it is difficult to reliably ensure insulation. Therefore, the second bent portion 343 is arranged inside the end portion 362 to improve insulation performance.

[0027] The terminal portion 345 is exposed from the sealing resin 380. The first bent portion 342 is located between the terminal portion 345 and the second bent portion 343. The first bent portion 342 is bent so that the terminal portion 345 is arranged on a substantially flush plane with the positive terminal 311, the negative terminal 312, and the AC terminal 313. Hereinafter, the portion of the signal terminal 340 on the left side of the first bent portion 342 in the figure and inside the sealing resin 380 is referred to as the first region 340X, and the portion of the signal terminal 340 outside the sealing resin 380 is referred to as the second region 340Y. By locating the terminal portion 345 on a substantially flush plane with the positive terminal 311, the negative terminal 312, and the AC terminal 313, the mold used for sealing with the sealing resin 380 can be simplified, thereby improving productivity. The low-rigidity portion 341 is located between the first bent portion 342 and the terminal portion 345. The low-rigidity portion 341 is sealed with the sealing resin 380. The low-rigidity portion 341 has lower rigidity than the terminal portion 345 and the second bent portion 343 .

[0028] When the terminal portion 345 is pressed with a mold for sealing with the sealing resin 380, stress is applied to the low-rigidity portion 341. This reduces the stress applied to the portion of the second bent portion 343 where the insulating heat-conductive member 360 is bonded, thereby improving the reliability of the semiconductor device 300. Sealing the low-rigidity portion 341 with the sealing resin 380 reduces the stress applied to the low-rigidity portion 341 when an external force is applied to the terminal portion 345, thereby improving the reliability of the semiconductor device 300.

[0029] Figure 6 yes Figure 5 Magnified view of section C in FIG. Figure 6 The observation angle and Figure 5 The terminal body 344 has a protrusion 347 at a position facing the signal electrode 203. The protrusion 347 is bonded to the signal electrode 203 using a third bonding material 352. Heat generated by the first element 200U and the second element 200L is transferred from the lower portion of the diagram to the upper portion of the diagram as described below. Specifically, heat is transferred from the signal electrodes 203 of the first element 200U and the second element 200L to the protrusion 347, the terminal body 344 of the signal terminal 340, the insulating heat-conducting member 360, and the base lower surface 333.

[0030] The protrusion 347 has a protrusion side surface 348. The protrusion side surface 348 is inclined, extending toward the base portion lower surface 333. The inclination of the protrusion side surface 348 facilitates heat dissipation, improving heat dissipation. The following describes the shape of the protrusion 347 without the protrusion side surface 348. Specifically, the protrusion 347 protruding toward the signal electrode 203 in the signal terminal 340 has a shape that tapers toward the tip of the signal electrode 203.

[0031] If the position of the protrusion 347 deviates from the signal electrode 203, it can cause unintentional short circuits, which is undesirable. However, if the position of the protrusion 347 is too precise, the productivity of the semiconductor device 300 will be reduced. Therefore, by reducing the area of the tip of the protrusion 347 on the signal electrode 203 side, the required positional accuracy of the protrusion 347 is relaxed, thereby improving the productivity of the semiconductor device 300. However, if the protrusion 347 is elongated, the thermal resistance increases. Therefore, by increasing the cross-sectional area of the positive Z-axis side in the XY plane, this increase in thermal resistance is prevented, achieving smoother transfer of thermal energy.

[0032] The insulating heat-conducting member 360 includes a base heat transfer portion 365 extending along the X-axis as shown, a side heat transfer portion 364 extending along the Z-axis as shown, and a bent heat-conducting member portion 363 at a corner. The bent heat-conducting member portion 363 can be considered a region sandwiched between the base heat transfer portion 365 and the side heat transfer portion 364. The bent heat-conducting member portion 363, the side heat transfer portion 364, and the base heat transfer portion 365 are integrally formed. The protruding side surface 337 is bonded to the right side surface 344R of the main body via the side heat transfer portion 364. The bonding of the protruding side surface 337 to the right side surface 344R of the main body improves heat dissipation. The abutment of the right side surface 344R of the main body facilitates positioning of the signal terminal 340.

[0033] The length of the side heat transfer portion 364 in the Z-axis direction is set so as not to contact the second bonding material 351. A load of σy is applied to the base heat transfer portion 365 of the insulating heat conductive member 360 so as to be bonded to the base portion lower surface 333. A load of σx is applied to the side heat transfer portion 364 of the insulating heat conductive member 360 so as to be bonded to the protrusion side surface 337.

[0034] Because the bent heat conduction member portion 363 is bent, it is more susceptible to external forces than the side heat conduction portion 364 and the base heat conduction portion 365. If the bent heat conduction member portion 363 is subjected to external forces, its insulation performance may be reduced. As a countermeasure, the recess 334 is provided to prevent contact between the second conductive member 330 and the bent heat conduction member portion 363, ensuring insulation performance.

[0035] Figure 7 is an external view of the second conductive member 330. However, Figure 7 and Figure 3 The different observation angles show that Figure 3 The negative Z-axis surface is hidden in the center of the second conductive member 330. The protrusions 338 protruding toward the negative Z-axis are arranged in the X-axis direction. The recesses 334 extend along the entire width of the second conductive member 330 in the Y-axis direction, at both the positive X-axis end and the negative X-axis end of the protrusion 338. Therefore, the recesses 334 can be easily processed by drawing or extrusion. Because the Y-axis direction in which the recesses 334 extend is perpendicular to the X-axis direction in which the signal terminals 340 extend, it is easy to create a flat surface on the base lower surface 333, making it easier to attach the insulating heat-conductive member 360 to the base lower surface 333.

[0036] According to the above-described embodiment, the following effects can be obtained. (1) The semiconductor device 300 includes: a first element 200U having a first main electrode 201, a second main electrode 202, and a signal electrode 203; a sealing resin 380 that seals the first element 200U; a second conductive member 330 having a protrusion 338 that protrudes from a base portion 330B that faces the first element 200U and is connected to the first main electrode 201; a signal terminal 340 having a terminal main portion 344 and a main portion right side surface 344R, wherein one end of the terminal main portion 344 is bonded to the signal electrode 203 of the semiconductor element via a bonding material, and the other end extends to the outside of the sealing resin 380 and faces the base portion lower surface 333 that is the lower surface of the second conductive member 330, and the main portion right side surface 344R faces the protrusion side surface 337 that is the side surface of the protrusion 338; and an insulating heat conducting member 360 that is arranged between the second conductive member 330 and the signal terminal 340. The second conductive member 330 and the signal terminal 340 have a recess 334 between the base lower surface 333 and the protrusion 338. This improves heat dissipation and insulation. Specifically, the signal electrode 203 and the signal terminal 340 are thermally connected to the second conductive member 330 via the insulating heat-conducting member 360. Heat is dissipated from the signal terminal 340 to the second conductive member 330, providing a heat dissipation path and improving heat dissipation. Furthermore, the recess 334 provided at the curved portion of the insulating heat-conducting member 360 enhances insulation.

[0037] (2) The signal terminal 340 includes a first region 340X sealed with a sealing resin 380 and a second region 340Y extending outward from the sealing resin 380. The first region 340X of the signal terminal 340 is formed with a low-rigidity portion 341 having lower rigidity than the remaining portion of the first region 340X. Therefore, when sealing with the sealing resin 380, stress is less likely to be applied to the bonding interface between the insulating heat-conducting member 360 and the signal terminal 340, thereby suppressing delamination and improving productivity.

[0038] (3) When viewed from the protruding direction of the protruding portion 338, that is, the Z-axis direction, the insulating heat conductive member 360 is disposed within the second conductive member 330. This prevents the insulating heat conductive member 360 from being broken during the manufacture of the semiconductor device 300, thereby improving the productivity of the semiconductor device 300.

[0039] (4) The second conductive member 330 includes the terminal portion 345 extending outside the sealing resin 380. The terminal portion 345 and the second region 340Y are arranged on the same plane. This simplifies the mold for the sealing resin 380 and improves the productivity of the semiconductor device 300.

[0040] (5) The recessed portion 334 is formed symmetrically with respect to the protruding portion 338. Therefore, the recessed portion 334 can be easily formed by press forming, thereby improving the productivity of the semiconductor device 300.

[0041] (6) The recessed portion 334 extends in a direction perpendicular to the extending direction of the signal terminal 340. Therefore, the recessed portion 334 can be formed by extrusion molding or drawing, thereby improving the productivity of the semiconductor device 300.

[0042] (7) The terminal main body 344 has the protrusion 347 facing the signal electrode 203, and the protrusion 347 is provided with an inclination extending from the signal electrode 203 toward the terminal main body 344. Therefore, heat dissipation is improved.

[0043] (Variation 1) Figure 8 This is an enlarged view of portion C in the first modification. Figure 8 Corresponding to the embodiment Figure 6 In the first modification, the right side surface 344R of the main body and the side surface 337 of the protrusion are inclined. In other words, in the above-described embodiment, the right side surface 344R of the main body and the side surface 337 of the protrusion are parallel to the Z axis. However, in this modification, the right side surface 344R of the main body and the side surface 337 of the protrusion are not parallel to the Z axis. In this modification, since the protrusion side surface 337 is inclined, when a load σ0 is applied, a load σ1 for bonding the insulating heat conduction member 360 can also be generated on the protrusion side surface 337A, thereby improving productivity. The inclination angle θ is preferably greater than 135°. If the inclination angle θ is large, σ1 increases, making bonding of the insulating heat conduction member 360 easier.

[0044] The recess 334A in this modified example has a recess side 392A. The recess side 392A is inclined. By being inclined, it can be easily processed during drawing and extrusion, improving productivity. The other shapes are the same as those in the embodiment.

[0045] In this modification, in addition to the above-described embodiment, the following effects can be obtained. (8) The side surface of the main body is inclined so as to approach the main electrode from the main body. Therefore, the heat from the signal electrode 203 is easily diffused, and the heat dissipation performance is improved.

[0046] (9) The angle of the side surface of the main body relative to the main body is 135 degrees or more. Therefore, the load for bonding the insulating heat conduction member 360 is increased, and bonding of the insulating heat conduction member 360 is facilitated.

[0047] (Variation 2) Figure 9 This is an enlarged view of portion C in the second modification. Figure 9 Corresponding to the embodiment Figure 6 . In the above embodiment, a recess 334 is provided at the intersection of the protrusion 338 and the lower surface 333 of the base. However, in this modified example, the terminal main body 344 has a terminal recess 346B. The terminal recess 346B is arranged at a position where the heat conduction member bent portion 363 avoids the terminal main body 344. That is, the terminal recess 346B is provided on the side opposite to the recess 334, sandwiching the heat conduction member bent portion 363. Therefore, by providing the terminal recess 346B instead of the recess 334, the insulation performance can be improved in the same manner as in the embodiment. The other structures are the same as in the embodiment.

[0048] Furthermore, while the embodiment includes recess 334 and this second modification includes terminal recess 346B, semiconductor device 300 only needs to include at least one of recess 334 and terminal recess 346B. In other words, semiconductor device 300 may include both recess 334 and terminal recess 346B.

[0049] (Variation 3) Figure 10 This diagram shows a power conversion device 1 according to a third variation. The power conversion device 1 includes three semiconductor devices 300, a thin-film capacitor bank 3G for voltage conversion, and a control substrate 7. This is a circuit diagram of the power conversion device 1. The power conversion device 1 converts DC power into AC power and vice versa. The power conversion device 1 can convert DC power supplied from a high-voltage battery 2 into AC power and supply it to the motor generator MG, or it can convert AC power supplied from the motor generator MG into DC power and supply it to the high-voltage battery 2. The high-voltage battery 2 is a secondary battery such as a lithium-ion battery or a nickel-metal hydride battery.

[0050] The motor generator MG uses AC power to output the power of the HEV or EV. In addition, the motor generator MG also functions as a generator that regenerates the AC power generated by the motor rotation due to external force to the high voltage battery 2. The motor generator MG has, for example, Figure 1A three-phase motor with Y connection is shown.

[0051] The film capacitor group 3G is constructed by placing multiple film capacitors 3 in a resin case, sealing them with resin, and then modularizing them. The film capacitor group 3G smoothes the DC power when converting it to AC power. Each semiconductor device 300 converts the DC power from the high-voltage battery 2 into three-phase AC power by controlling the on / off timing of the switching elements that constitute the U-phase arm, V-phase arm, and W-phase arm. The control board 7 includes a microcomputer that performs computational processing. Based on input from the host controller 10, the control board 7 generates gate pulse signals and outputs them to each semiconductor device 300.

[0052] According to this modification, the following effects can be obtained. (10) The power conversion device 1 includes a semiconductor device 300 and a control substrate 7 for controlling the semiconductor device 300. Therefore, it is possible to provide a power conversion device 1 having a built-in semiconductor device 300 with excellent heat dissipation and insulation properties. Alternatively, the power conversion device 1 may include only one semiconductor device 300, corresponding to a single phase.

[0053] The above embodiments and modifications may also be combined. In the above, various embodiments and modifications are described, but the present invention is not limited to these contents. Other modes that can be thought of within the scope of the technical idea of the present invention are also included in the scope of the present invention. Explanation of symbols

[0054] 1: Power conversion device, 7: Control substrate, 200U: First element, 201: First main electrode, 203: Signal electrode, 300: Semiconductor device, 330: Second conductive member, 330B: Base, 331: Second heat dissipation surface, 332: Terminal connection portion, 333: Base lower surface, 334, 334A: Recess, 335: Base center, 336: Conductor member side, 337, 337A: Protrusion Side surface, 338: Protrusion, 340: Signal terminal, 341: Low-rigidity portion, 342: First bent portion, 343: Second bent portion, 344: Terminal main body, 344R: Right side of the main body, 345: Terminal portion, 346B: Terminal recess, 347: Protrusion, 348: Side surface of the protrusion, 360: Insulating heat-conducting member, 363: Heat-conducting member bent portion, 380: Sealing resin, 392A: Side surface of the recess.

Claims

1. A semiconductor device, characterized in that: have: a semiconductor element having a main electrode and a signal electrode; a sealing resin that seals the semiconductor element; a conductive member having a protrusion protruding from a lower surface opposite to the semiconductor element and connected to the main electrode; a signal terminal having a main body portion and a main body side surface, wherein one end of the main body portion is bonded to the signal electrode of the semiconductor element via a bonding material, and the other end extends to the outside of the sealing resin and faces the lower surface of the conductive member, and the main body side surface faces the side surface of the protrusion; as well as an insulating heat-conductive member disposed between the conductive member and the signal terminal; The conductive member and the signal terminal include a recessed portion in at least one of a portion between a lower surface of the conductive member and the protruding portion and a portion between the main body and a side surface of the main body.

2. The semiconductor device according to claim 1, wherein The signal terminal includes a first region sealed by the sealing resin and a second region extending outside the sealing resin. The first region has a low-rigidity portion formed therein, the low-rigidity portion having lower rigidity than other portions of the first region.

3. The semiconductor device according to claim 1, wherein The insulating heat-conductive member is arranged within the range of the electrically conductive member when viewed from a protruding direction of the protruding portion.

4. The semiconductor device according to claim 2, wherein The conductive member has a main terminal portion extending outside the sealing resin. The main terminal portion and the second region are arranged on the same plane.

5. The semiconductor device according to claim 1, wherein The recessed portion is formed symmetrically with respect to the protruding portion.

6. The semiconductor device according to claim 1, wherein The recess extends in a direction perpendicular to an extending direction of the signal terminal.

7. The semiconductor device according to claim 1, wherein The main body has a convex portion facing the signal electrode. The convex portion is provided with an inclination extending from the signal electrode toward the main body portion.

8. The semiconductor device according to claim 1, wherein The side surface of the main body is inclined so as to approach the main electrode from the main body.

9. The semiconductor device according to claim 1, wherein The angle of the side surface of the main body relative to the main body is greater than 135 degrees.

10. A power conversion device, characterized in that: A device comprising the semiconductor device according to claim 1 and a main conversion circuit for converting input power and outputting the converted power.

Images