Plasma processing apparatus and plasma processing method

Abstract

A plasma processing apparatus includes a chamber, a substrate support, at least one antenna, and a gas supply. The chamber includes a dielectric window. The dielectric window is disposed between the substrate support and the antenna. An RF generation portion is configured to generate a first high-frequency electric power and a second high-frequency electric power. The first high-frequency electric power has a first frequency. The second high-frequency electric power has a second frequency. A dielectric loss of the dielectric window for the second frequency is greater than a dielectric loss of the dielectric window for the first frequency.

Description

Technical Field

[0001] The exemplary embodiments of the present invention relate to plasma processing apparatus and plasma processing method. Background Technology

[0002] A plasma processing apparatus is used to perform plasma processing on a substrate. The plasma processing apparatus includes a chamber, a substrate support, an antenna, a gas supply unit, and a high-frequency power supply. The chamber includes a dielectric window. The substrate support is disposed inside the chamber. The antenna is disposed outside the chamber. The dielectric window is positioned between the substrate support and the antenna. The gas supply unit is configured to supply gas into the chamber. The high-frequency power supply is electrically connected to the antenna. The high-frequency power supply supplies high-frequency electrical power to the antenna. Patent Document 1 discloses such a plasma processing apparatus.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2011-119658 Summary of the Invention

[0006] The technical problem that the invention aims to solve

[0007] This invention provides a technique for suppressing the consumption of dielectric windows.

[0008] Technical solutions for solving technical problems

[0009] In one exemplary embodiment, a plasma processing apparatus is provided. The plasma processing apparatus includes a chamber, a substrate support, at least one antenna, a gas supply section, and an RF generation section. The chamber includes a dielectric window. The substrate support is disposed within the chamber. At least one antenna is disposed outside the chamber. The dielectric window is disposed between the substrate support and the at least one antenna. The gas supply section is configured to supply gas into the chamber. The RF generation section is electrically connected to the at least one antenna. The RF generation section is configured to generate a first high-frequency electrical power and a second high-frequency electrical power. The first high-frequency electrical power has a first frequency. The second high-frequency electrical power has a second frequency. The dielectric loss of the dielectric window at the second frequency is greater than the dielectric loss of the dielectric window at the first frequency.

[0010] Invention Effects

[0011] According to an exemplary implementation, the consumption of the dielectric window can be suppressed. Attached Figure Description

[0012] Figure 1 This is a diagram illustrating a structural example of an inductively coupled plasma processing device.

[0013] Figure 2This is a diagram illustrating the structure of the power supply system and control system in a plasma processing apparatus according to an exemplary embodiment.

[0014] Figure 3 This is a timing diagram of the first and second high-frequency electrical powers of a plasma processing apparatus according to an exemplary embodiment.

[0015] Figure 4 This is a diagram illustrating the structure of the power supply system and control system in a plasma processing apparatus according to another exemplary embodiment.

[0016] Figure 5 (a) is a plan view of an antenna according to an exemplary embodiment. Figure 5 (b) is a plan view of the antenna of another exemplary embodiment. Figure 5 (c) is a plan view of the antenna in yet another exemplary embodiment.

[0017] Figure 6 (a) is a graph showing an example of the power spectrum of high-frequency electrical power with multiple frequency components. Figure 6 (b) is a representation Figure 6 A figure showing an example of multiple measurements of the coupling efficiency of the plasma for multiple frequency components of (a). Figure 6 (c) is a diagram showing an example of the power spectrum of high-frequency electrical power with multiple frequency components. Figure 6 (d) is shown as representing Figure 6 A figure showing an example of multiple measurements of the coupling efficiency of the plasma for multiple frequency components of (c).

[0018] Figure 7 (a) is a diagram showing an example of the power spectrum of a second high-frequency electrical power having multiple frequency components. Figure 7 (b) is a representation Figure 7 A figure showing an example of multiple measurements of the coupling efficiency of the plasma for multiple frequency components of (a). Figure 7 (c) is a diagram showing an example of the power spectrum of a second high-frequency electrical power having multiple frequency components.

[0019] Figure 8 This is a flowchart of a plasma processing method in an exemplary embodiment. Detailed Implementation

[0020] Hereinafter, various exemplary embodiments will be described in detail with reference to the accompanying drawings. In each drawing, the same or corresponding parts are labeled with the same reference numerals.

[0021] The following describes a structural example of a plasma processing system. Figure 1This is a diagram illustrating a structural example of an inductively coupled plasma processing device.

[0022] The plasma processing system includes an inductively coupled plasma processing apparatus 1 and a control unit 2. The inductively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing chamber 10 includes a dielectric window 101. Furthermore, the plasma processing apparatus 1 includes a substrate support 11, a gas inlet, and an antenna 14. The substrate support 11 is disposed within the plasma processing chamber 10. The antenna 14 is disposed outside the chamber 10. The antenna 14 may be constructed from a coil wound around an axis extending in the vertical direction. The antenna 14 may, for example, be disposed on or above the plasma processing chamber 10 (i.e., on or above the dielectric window 101). The dielectric window 101 is disposed between the substrate support 11 and the antenna 14. The plasma processing chamber 10 has a plasma processing space 10s defined by the dielectric window 101, the sidewall 102 of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 includes at least one gas supply port for supplying at least one processing gas to the plasma processing space 10s, and at least one gas outlet for discharging gas from the plasma processing space. The plasma processing chamber 10 is grounded.

[0023] The substrate support portion 11 includes a main body portion 111 and a ring assembly 112. The main body portion 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body portion 111 surrounds the central region 111a of the main body portion 111 when viewed from above. The substrate W is disposed on the central region 111a of the main body portion 111, and the ring assembly 112 is disposed on the annular region 111b of the main body portion 111 in such a way that it surrounds the substrate W on the central region 111a of the main body portion 111. Therefore, the central region 111a is also referred to as a substrate support surface for supporting the substrate W, and the annular region 111b is also referred to as an annular support surface for supporting the ring assembly 112.

[0024] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive component. The conductive component of the base 1110 can function as a bias electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic component 1111a and an electrostatic electrode 1111b disposed within the ceramic component 1111a. The ceramic component 1111a has a central region 111a. In one embodiment, the ceramic component 1111a also has an annular region 111b. Furthermore, other components surrounding the electrostatic chuck 1111, such as the annular electrostatic chuck and an annular insulating component, may also have an annular region 111b. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck and the annular insulating component, or it may be disposed on both the electrostatic chuck 1111 and the annular insulating component. Furthermore, at least one RF / DC electrode coupled to the RF (Radio Frequency) power supply 31 and / or DC (Direct Current) power supply 32, described later, can be disposed within the ceramic component 1111a. In this case, the at least one RF / DC electrode can function as a bias electrode. Additionally, the conductive components of the base 1110 and the at least one RF / DC electrode can also function as multiple bias electrodes. Furthermore, the electrostatic electrode 1111b can also function as a bias electrode. Therefore, the substrate support 11 includes at least one bias electrode.

[0025] The ring assembly 112 includes one or more annular components. In one embodiment, the one or more annular components include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0026] Furthermore, the substrate support 11 may include a temperature control module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or gas can flow through the flow path 1110a. In one embodiment, the flow path 1110a is formed within the base 1110, and one or more heaters are disposed within the ceramic component 1111a of the electrostatic chuck 1111. Additionally, the substrate support 11 may include a heat transfer gas supply section configured to supply heat transfer gas to the gap between the back surface of the substrate W and the central region 111a.

[0027] The gas inlet is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. In one embodiment, the gas inlet includes a central gas injector (CGI) 13. The central gas injector 13 is disposed above the substrate support 11 and can be installed in the central opening formed in the dielectric window 101. The central gas injector 13 includes at least one gas supply port 13a, at least one gas flow path 13b, and at least one gas inlet 13c. The process gas supplied to the gas supply port 13a is introduced into the plasma processing space 10s through the gas flow path 13b and the gas inlet 13c. Alternatively, the gas inlet may include one or more side gas injectors (SGIs) installed in one or more openings formed in the sidewall 102, in addition to or in place of the central gas injector 13.

[0028] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from its respective gas source 21 to the gas inlet via its respective flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may include one or more flow modulation devices for modulating or pulsed flow of the at least one process gas.

[0029] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one bias electrode and antenna 14. This generates plasma from at least one processing gas supplied to the plasma processing space 10. Therefore, the RF power supply 31 can function as at least part of a plasma generation unit configured to generate plasma from one or more processing gases within the plasma processing chamber 10. Furthermore, by supplying a bias RF signal to at least one bias electrode, a bias potential can be generated on the substrate W, introducing ions from the formed plasma into the substrate W.

[0030] In one embodiment, the RF power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a (RF generation unit) is configured to be coupled to the antenna 14 via at least one impedance matching circuit and is capable of generating a generation source RF signal (generation source RF power) for plasma generation. In one embodiment, the generation source RF signal has a frequency in the range of 10MHz to 150MHz. In one embodiment, the first RF generation unit 31a may be configured to generate multiple generation source RF signals with different frequencies. The generated one or more generation source RF signals are supplied to the antenna 14.

[0031] The second RF generation unit 31b is configured to be coupled to at least one bias electrode via at least one impedance matching circuit, and is capable of generating a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than that of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generation unit 31b may be configured to generate multiple bias RF signals with different frequencies. The generated one or more bias RF signals are supplied to at least one bias electrode. Furthermore, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0032] Furthermore, the power supply 30 may include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a bias DC generator 32a. In one embodiment, the bias DC generator 32a is configured to be connected to at least one bias electrode and is capable of generating a bias DC signal. The generated bias DC signal is applied to at least one bias electrode.

[0033] In various embodiments, the bias DC signal can be pulsed. In this case, a voltage pulse sequence is applied to at least one bias electrode. The voltage pulses can have rectangular, trapezoidal, triangular, or combinations thereof pulse waveforms. In one embodiment, a waveform generation unit for generating a sequence of voltage pulses from the DC signal is connected between the bias DC generation unit 32a and at least one bias electrode. Therefore, the bias DC generation unit 32a and the waveform generation unit constitute a voltage pulse generation unit. The voltage pulses can have positive or negative polarity. Furthermore, the voltage pulse sequence can include one or more positive voltage pulses and one or more negative voltage pulses within one cycle. Additionally, the bias DC generation unit 32a can be provided outside the RF power supply 31, or it can be provided in place of the second RF generation unit 31b.

[0034] The exhaust system 40 can be connected to a gas outlet 10e, for example, located at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve can be used to regulate the pressure within the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0035] The control unit 2 processes computer-executable instructions that enable the plasma processing apparatus 1 to perform the various steps described herein. The control unit 2 may be configured to control the various elements of the plasma processing apparatus 1 to perform the various steps described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented, for example, by a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program, thereby performing various control actions. The program may be stored in the storage unit 2a2 in advance or retrieved via a medium when needed. The retrieved program is stored in the storage unit 2a2 and read and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 can communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).

[0036] The following is for reference Figure 2 . Figure 2 This is a structural diagram illustrating the power supply and control systems in a plasma processing apparatus according to an exemplary embodiment. (Example) Figure 2 As shown, the plasma processing apparatus 1 may include a control unit 2. In the plasma processing apparatus 1, the first RF generation unit 31a can be controlled by the control unit 2. In one embodiment, the first RF generation unit 31a may be composed of a single high-frequency power supply 300. The high-frequency power supply 300 may have a signal generator and an amplifier. The signal generator outputs a signal with a frequency specified by the control unit 2 to the amplifier. The amplifier generates high-frequency electrical power by amplifying the signal input from the signal generator and outputs the high-frequency electrical power. The amplification rate of the amplifier can be specified by the control unit 2.

[0037] The first RF generation unit 31a is configured to generate a first high-frequency electrical power RF1 and a second high-frequency electrical power RF2. The first high-frequency electrical power RF1 has a first frequency. The second high-frequency electrical power has a second frequency. The first frequency and the second frequency are different from each other. For example, the second frequency may be a frequency that is more than 1% higher than the first frequency.

[0038] The first RF generation unit 31a can be electrically connected to the antenna 14 via a directional coupler 310, a sensor 33, and a matching unit 34. The directional coupler 310 measures the power level of the traveling wave of the high-frequency electrical power (each of the first high-frequency electrical power RF1 and the second high-frequency electrical power RF2) output from the first RF generation unit 31a and the power level of the reflected wave of that high-frequency electrical power. The directional coupler 310 can determine, for example, the reflection coefficient of the high-frequency electrical power (each of the first high-frequency electrical power RF1 and the second high-frequency electrical power RF2) output from the high-frequency power supply 300. The reflection coefficient is determined based on the power level of the traveling wave and the power level of the reflected wave. This reflection coefficient is communicated to the control unit 2 by the directional coupler 310. The directional coupler 310 can be integrated with the high-frequency power supply 300.

[0039] Sensor 33 is, for example, a voltage and current sensor. Sensor 33 measures the voltage and current of the high-frequency electrical power (each of the first high-frequency electrical power RF1 and the second high-frequency electrical power RF2) supplied to antenna 14. Sensor 33 can determine the reflection coefficient of the high-frequency electrical power (each of the first high-frequency electrical power RF1 and the second high-frequency electrical power RF2) based on the measured voltage and current. Sensor 33 can then inform the control unit 2 of this reflection coefficient.

[0040] Matching unit 34 includes an impedance matching circuit with variable impedance. Matching unit 34 is connected between the first RF generation unit 31a and the antenna 14. Matching unit 34 is configured to match the load impedance of the first RF generation unit 31a with the output impedance of the first RF generation unit 31a. The variable impedance of matching unit 34 can be controlled by control unit 2.

[0041] In one embodiment, the plasma processing apparatus 1 may further include a first filter 35, an impedance transformer 36, and a second filter 37. The first filter 35 is configured to selectively allow a first high-frequency electrical power RF1 to pass through. The second filter 37 is configured to allow a second high-frequency electrical power RF2 to pass through. The first filter 35 and the second filter 37 are connected in parallel between the matching unit 34 and the antenna 14, respectively. The matching unit 34, the first filter 35, and the antenna 14 constitute a first electrical path. The first high-frequency electrical power RF1 is supplied to the antenna 14 via the first electrical path. The matching unit 34, the second filter 37, and the antenna 14 constitute a second electrical path. The second high-frequency electrical power RF2 is supplied to the antenna 14 via the second electrical path.

[0042] Impedance transformer 36 is connected between one of the filters in the first filter 35 and the second filter 37 and the antenna 14. Figure 2 In the example shown, impedance transformer 36 is connected between the first filter 35 and the antenna 14.

[0043] Matching unit 34 can be configured to match the load impedance at the frequency of the high-frequency electrical power selectively passing through another filter in the first filter 35 and the second filter 37 with the output impedance of the first RF generation unit 31a. Figure 2 In the example shown, the matching unit 34 is configured to match the load impedance for the second frequency with the output impedance of the first RF generation unit 31a.

[0044] Impedance transformer 36 is configured to match the load impedance at the frequency of high-frequency electrical power selectively passing through one of the first filter 35 and the second filter 37 with the output impedance of the first RF generation unit 31a. Figure 2 In the example shown, the impedance transformer 36 is configured to match the load impedance for the frequency of the first high-frequency electrical power RF1 that selectively passes through the first filter 35 with the output impedance of the first RF generation unit 31a. The impedance transformer 36 may be constructed from a transformer.

[0045] The dielectric window 101 is made of a material whose dielectric loss at a second frequency is greater than that at a first frequency. That is, the second frequency is the frequency with a higher dielectric loss in the dielectric window 101 compared to the first frequency. Both the first and second frequencies can be set according to the material of the dielectric window 101. For example, the dielectric window 101 can be made of a material with the highest dielectric loss at the second frequency. The frequency with the highest dielectric loss of this material can be adjusted by the type and concentration of dopants contained in the material.

[0046] The first RF generation unit 31a is configured to generate a first high-frequency electrical power RF1. In one embodiment, the first RF generation unit 31a may be configured to generate the first high-frequency electrical power RF1 to ignite the plasma within the chamber 10. The first high-frequency electrical power RF1 may be supplied to the antenna 14 via a first electrical path. The first RF generation unit 31a is also configured to generate a second high-frequency electrical power RF2. In one embodiment, the first RF generation unit 31a may be configured to generate the second high-frequency electrical power RF2 to maintain the ignited plasma within the chamber 10. The second high-frequency electrical power RF2 may be supplied to the antenna 14 via a second electrical path.

[0047] When the dielectric loss in the dielectric window 101 is low, the loss of electrical energy coupled to the plasma can be suppressed. Therefore, a first high-frequency electrical power RF1 is supplied to the antenna 14 to ignite the plasma, thereby enabling efficient plasma ignition within the chamber 10.

[0048] When the dielectric loss in dielectric window 101 is large, the potential difference between the potential of the lower surface of dielectric window 101 and the potential of the plasma decreases. Therefore, when the dielectric loss in dielectric window 101 is large, the energy of ions impacting dielectric window 101 from the plasma can be suppressed to a lower level. Therefore, after plasma ignition, by using the second high-frequency electrical power RF2 to maintain the plasma, the consumption of dielectric window 101 can be suppressed.

[0049] Furthermore, in the plasma processing apparatus 1, the load impedance is matched for one of the first and second frequencies by a matching unit 34, while the load impedance is matched for the other frequency by an impedance converter 36. Therefore, the power supply system of the plasma processing apparatus 1 can have a simplified structure.

[0050] The following is for reference Figure 3 . Figure 3 This is a timing diagram of the first high-frequency electrical power and the second high-frequency electrical power in an exemplary embodiment of a plasma processing apparatus. The first RF generation unit 31a may be configured to simultaneously generate the first high-frequency electrical power RF1 and the second high-frequency electrical power RF2 after generating only the first high-frequency electrical power RF1 and before generating only the second high-frequency electrical power RF2. In one embodiment, the first RF generation unit 31a is configured to simultaneously supply the first high-frequency electrical power RF1 and the second high-frequency electrical power RF2 to the antenna 14 after supplying only the first high-frequency electrical power RF1 to the antenna 14 and before supplying only the second high-frequency electrical power RF2 to the antenna 14. After period T1 when only the first high-frequency electrical power RF1 is supplied to the antenna 14 and before period T2 when only the second high-frequency electrical power RF2 is supplied to the antenna 14, there may be a period T3 during which both the first high-frequency electrical power RF1 and the second high-frequency electrical power RF2 are simultaneously supplied to the antenna 14.

[0051] In another embodiment, the first RF generation unit 31a may supply both a first high-frequency electrical power RF1 and a second high-frequency electrical power RF2 to the antenna 14 during period T1. However, the power level of the second high-frequency electrical power RF2 during period T1 is lower than the power level of the second high-frequency electrical power RF2 during period T2. Furthermore, the first RF generation unit 31a may supply both the first high-frequency electrical power RF1 and the second high-frequency electrical power RF2 to the antenna 14 during period T2. However, the power level of the first high-frequency electrical power RF1 during period T2 is lower than the power level of the first high-frequency electrical power RF1 during period T1. Additionally, the first RF generation unit 31a may supply the antenna 14 with a first high-frequency electrical power RF1 having a higher power level than its power level during period T2 during period T3. The power level of the first high-frequency electrical power RF1 during period T3 may also be the same as the power level of the first high-frequency electrical power RF1 during period T1. Furthermore, the first RF generation unit 31a can supply the antenna 14 with a second high-frequency electrical power RF2 having a higher power level than that in period T1 during period T3. The power level of the second high-frequency electrical power RF2 in period T3 can also be the same as the power level of the second high-frequency electrical power RF2 in period T2.

[0052] The following is for reference Figure 4 . Figure 4 This is a diagram illustrating the structure of the power supply system and control system in a plasma processing apparatus according to another exemplary embodiment. The following is about... Figure 4 The plasma processing apparatus 1A shown will be explained from the perspective of the differences between the power supply system and control system of plasma processing apparatus 1A and the power supply system and control system of plasma processing apparatus 1.

[0053] The first RF generation unit 31a of the plasma processing apparatus 1A includes multiple high-frequency power supplies 301 and 302. High-frequency power supply 301 (first high-frequency power supply) is configured to generate a first high-frequency electrical power RF1. High-frequency power supply 302 (second high-frequency power supply) is configured to generate a second high-frequency electrical power RF2. The plasma processing apparatus 1A may not include a first filter 35, an impedance converter 36, and a second filter 37. The plasma processing apparatus 1A also includes a directional coupler 311, a sensor 331, a matching unit 341, a directional coupler 312, a sensor 332, and a matching unit 342.

[0054] The high-frequency power supply 301 is electrically connected to the antenna 14 via a directional coupler 311, a sensor 331, and a matching unit 341. The matching unit 341 is configured to match the load impedance for a first frequency with the output impedance of the high-frequency power supply 301.

[0055] The directional coupler 311 measures the power level of the traveling wave of the first high-frequency electrical power RF1 and the power level of the reflected wave of the first high-frequency electrical power RF1. The directional coupler 311 can determine the reflection coefficient of the first high-frequency electrical power RF1. The reflection coefficient is determined by the power level of the traveling wave and the power level of the reflected wave. This reflection coefficient is notified from the directional coupler 311 to the control unit 2. The directional coupler 311 can be integrated with the high-frequency power supply 301.

[0056] Sensor 331 is, for example, a voltage and current sensor. Sensor 331 measures the voltage and current of the first high-frequency electrical power RF1 supplied to antenna 14. Sensor 331 can determine the reflection coefficient of the first high-frequency electrical power RF1 from the measured voltage and current. Sensor 331 can then inform the control unit 2 of this reflection coefficient.

[0057] The high-frequency power supply 302 is electrically connected to the antenna 14 via a directional coupler 312, a sensor 332, and a matching unit 342. The matching unit 342 is configured to match the load impedance for the second frequency with the output impedance of the high-frequency power supply 302.

[0058] The directional coupler 312 measures the power level of the traveling wave of the second high-frequency electrical power RF2 and the power level of the reflected wave of the second high-frequency electrical power RF2. The directional coupler 312 can determine the reflection coefficient of the second high-frequency electrical power RF2. The reflection coefficient is determined by the power level of the traveling wave and the power level of the reflected wave. This reflection coefficient is notified from the directional coupler 312 to the control unit 2. The directional coupler 312 can be integrated with the high-frequency power supply 302.

[0059] Sensor 332 is, for example, a voltage and current sensor. Sensor 332 measures the voltage and current of the second high-frequency electrical power RF2 supplied to antenna 14. Sensor 332 can determine the reflection coefficient of the second high-frequency electrical power RF2 from the measured voltage and current. Sensor 332 can then inform the control unit 2 of this reflection coefficient.

[0060] The following is for reference Figure 5 (a) to (c). As shown in the figure, in the plasma processing apparatus of various exemplary embodiments, the antenna may be composed of multiple antennas.

[0061] Figure 5 (a) is a plan view of an antenna in an exemplary embodiment. Figure 5 (b) is a plan view of the antenna in another exemplary embodiment. Figure 5 (c) is a plan view of the antenna in yet another exemplary embodiment. The plasma processing apparatus of various exemplary embodiments may include... Figure 5 Antenna 14A shown in (a) Figure 5 Antenna 14B shown in (b) or Figure 5 Antenna 14C, shown in (c), is used instead of antenna 14.

[0062] Antennas 14A, 14B, and 14C each include a first antenna 141 and a second antenna 142. The first antenna 141 and the second antenna 142 can each be constructed from coils wound around an axis extending in the vertical direction. The first antenna 141 and the second antenna 142 are each circular when viewed from above. The central axis of the second antenna 142 can be located on the central axis of the chamber 10. The first antenna 141 is smaller than the second antenna 142.

[0063] In antenna 14A, the first antenna 141 and the second antenna 142 are configured in a manner that does not overlap with each other when viewed from above. In antenna 14A, the outer periphery of the first antenna 141 and the outer periphery of the second antenna 142 can be configured to be externally tangent when viewed from above.

[0064] In antenna 14B, the first antenna 141 and the second antenna 142 are configured to overlap each other when viewed from above. For example... Figure 5 As shown in (b), the first antenna 141 and the second antenna 142 can share a central axis.

[0065] In antenna 14C, the first antenna 141 and the second antenna 142 are configured to overlap each other when viewed from above. For example... Figure 5 As shown in (c), the central axis of the first antenna 141 can be positioned offset from the central axis of the second antenna 142. The outer periphery of the first antenna 141 and the inner periphery of the second antenna 142 can be configured to be tangent when viewed from above.

[0066] In each of antennas 14A, 14B, and 14C, the first high-frequency power RF1 (first high-frequency power RF1) and the second high-frequency power RF2 (second high-frequency power RF2) can be supplied to the first antenna 141. Similarly, the second antenna 142 (first high-frequency power RF1 and second high-frequency power RF2) can be supplied to the second antenna 142. Furthermore, at least one of the first antenna 141 and the second antenna 142 can be supplied with both the first high-frequency power RF1 and the second high-frequency power RF2 simultaneously.

[0067] In one embodiment, the control unit 2 may be configured to determine a first frequency and use a first high-frequency electrical power RF1 having the determined first frequency to perform plasma ignition. Hereinafter, refer to... Figure 6 (a)~ Figure 6 (d) describes the process by which the control unit 2 determines the first frequency.

[0068] Figure 6Figure (a) is an example of a power spectrum of high-frequency electrical power having multiple frequency components. The first RF generation unit 31a can be configured to generate power such as... Figure 6 (a) shows a high-frequency electrical power with multiple frequency components. Figure 6 The high-frequency electrical power shown in (a) has multiple frequency components Sa1 to San. n is an integer greater than or equal to 2. The power level of each of the multiple frequency components Sa1 to San is a predetermined power level P. The control unit 2 controls the first RF generation unit 31a to supply the high-frequency electrical power having multiple frequency components to the antenna 14. In addition, in the plasma processing apparatus 1A, the high-frequency electrical power having multiple frequency components can be generated by the high-frequency power supply 301.

[0069] Figure 6 (b) is a representation Figure 6 The diagram illustrates an example of multiple measurements of the coupling efficiency of multiple frequency components with respect to the plasma in (a). Control unit 2 uses these multiple measurements to determine a first frequency. The multiple measurements represent the coupling efficiency of each of the multiple frequency components Sa1 to San with respect to the plasma. These multiple measurements can be, for example, the reflection coefficients of each of the multiple frequency components Sa1 to San, acquired by directional coupler 310 or sensor 33, or directional coupler 311 or sensor 331. Alternatively, the multiple measurements can be the load power levels of each of the multiple frequency components Sa1 to San, acquired by sensor 33 or sensor 331. The load power level is the difference between the power level of the traveling wave and the power level of the reflected wave for each of the multiple frequency components Sa1 to San.

[0070] Control unit 2 uses multiple measurements to determine the frequency of the component with the highest coupling efficiency among multiple frequency components Sa1 to San as the first frequency. Figure 6 In the example shown in (b), the frequency component with the highest coupling efficiency among the multiple frequency components Sa1 to San is frequency component Sa2.

[0071] In one embodiment, the control unit 2 can cause the first RF generation unit 31a to generate high-frequency electrical power comprising multiple frequency components Sb1 to Sbm and update the first frequency, wherein the multiple frequency components Sb1 to Sbm have a frequency interval narrower than the frequency pitch of the multiple frequency components Sa1 to San. The control unit 2 can be configured to perform plasma ignition using the first high-frequency electrical power RF1 with the updated first frequency. In the plasma processing apparatus 1A, the high-frequency electrical power having multiple frequency components can be generated by the high-frequency power supply 301.

[0072] Figure 6 (c) is a diagram representing an example of the power spectrum of high-frequency electrical power with multiple frequency components. Figure 6 The high-frequency power shown in (c) has multiple frequency components Sb1 to Sbm. m is an integer greater than or equal to 2. The power level of each of the multiple frequency components Sb1 to Sbm is a specified power level P. The band containing the multiple frequency components Sb1 to Sbm is narrower than the band containing the multiple frequency components Sa1 to San. The band containing the multiple frequency components Sb1 to Sbm includes the frequency component among the multiple frequency components Sa1 to San that has the highest coupling efficiency (e.g., frequency component Sa2). Frequency component Sa2 may be the center frequency of the band containing the multiple frequency components Sb1 to Sbm.

[0073] Figure 6 (d) is shown as representing Figure 6 A graph illustrating an example of multiple measurements of the coupling efficiency of multiple frequency components with respect to the plasma in (c). Control unit 2 uses these multiple measurements to update the first frequency. The multiple measurements represent the coupling efficiency of each of the multiple frequency components Sb1 to Sbn with respect to the plasma. These multiple measurements can be, for example, the reflection coefficients of each of the multiple frequency components Sb1 to Sbn acquired by directional coupler 310 or sensor 33, or directional coupler 311 or sensor 331. Alternatively, the multiple measurements can be the load power levels of each of the multiple frequency components Sb1 to Sbn acquired by sensor 33 or sensor 331. The load power level is the difference between the power level of the traveling wave and the power level of the reflected wave for each of the multiple frequency components Sb1 to Sbn.

[0074] Control unit 2 uses multiple measurements to determine the frequency of the component with the maximum coupling efficiency among multiple frequency components Sb1 to Sbn, and uses the determined frequency to update the first frequency. Figure 6 In the example shown in (d), the frequency component with the highest coupling efficiency among the multiple frequency components Sb1 to Sbm is frequency component Sb4.

[0075] In one embodiment, the control unit 2 can maintain the plasma using a second high-frequency electrical power RF2 containing multiple frequency components after plasma ignition, and can also perform load power control on the multiple frequency components of the second high-frequency electrical power RF2. Hereinafter, refer to... Figure 7 (a)~ Figure 7 (c) explains the process by which the control unit 2 performs load power control on multiple frequency components of the second high-frequency electrical power RF2.

[0076] Figure 7 Figure (a) is an example of the power spectrum of a second high-frequency electrical power having multiple frequency components. The first RF generation unit 31a can be configured to generate, after plasma ignition, such as Figure 7 The second high-frequency electric power shown in (a) has multiple frequency components. Figure 7 The second high-frequency electrical power shown in (a) has multiple frequency components S1 to Sn. n is an integer greater than or equal to 2. The power level of each of the multiple frequency components S1 to Sn is a predetermined power level P. The control unit 2 controls the first RF generation unit 31a to supply the second high-frequency electrical power having multiple frequency components to the antenna 14. Furthermore, in the plasma processing apparatus 1A, the second high-frequency electrical power having multiple frequency components can be generated by the high-frequency power supply 302.

[0077] Figure 7 (b) is shown to indicate that... Figure 7 The diagram illustrates an example of multiple measurements of the coupling efficiency with respect to the plasma for the multiple frequency components of (a). Control unit 2 uses these multiple measurements to control the load power of the multiple frequency components of the second high-frequency electrical power RF2. The multiple measurements represent the coupling efficiency of each of the multiple frequency components S1 to Sn with respect to the plasma. These multiple measurements can be, for example, the reflection coefficients of each of the multiple frequency components S1 to Sn acquired by directional coupler 310 or sensor 33, or directional coupler 312 or sensor 332. Alternatively, the multiple measurements can be the load power levels of each of the multiple frequency components S1 to Sn acquired by sensor 33 or sensor 332. The load power level is the difference between the power level of the traveling wave and the power level of the reflected wave for each of the multiple frequency components S1 to Sn.

[0078] Figure 7 Figure (c) is an example of a power spectrum representing a second high-frequency electrical power having multiple frequency components. Control unit 2 uses multiple measured values, such as... Figure 7 As shown in (c), the power levels of each frequency component of the second high-frequency power RF2 are adjusted so that the load power levels of each frequency component of the second high-frequency power RF2 are close to their respective specified levels. In one example, the control unit 2 may adjust the power levels of each frequency component of the second high-frequency power RF2 so that the load power levels of each frequency component of the second high-frequency power RF2 are approximately the same.

[0079] The following is for reference Figure 8 This is an example illustrating a plasma processing method. Figure 8 This is a flowchart illustrating an exemplary embodiment of a plasma processing method. Figure 8 The plasma processing method shown (hereinafter referred to as "method MT") can be performed using plasma processing apparatus 1 or 1A. Hereinafter, as an embodiment, method MT performed using plasma processing apparatus 1 will be described.

[0080] Method MT includes steps STa and STb. In step STa, a first high-frequency electrical power RF1 is supplied from the first RF generation unit 31a to the antenna 14. In one embodiment, in step STa, the first high-frequency electrical power RF1 can be supplied from the first RF generation unit 31a to the antenna 14 to ignite the plasma within the chamber 10 of the plasma processing apparatus 1. In step STb, a second high-frequency electrical power RF2 is supplied from the first RF generation unit 31a to the antenna 14. In one embodiment, in step STb, the second high-frequency electrical power RF2 can be supplied from the first RF generation unit 31a to the antenna 14 to maintain the ignited plasma within the chamber 10.

[0081] In one embodiment, when performing method MT using plasma processing apparatus 1, in step STa, a first high-frequency electrical power RF1 can be supplied from high-frequency power supply 300. In step STb, a second high-frequency electrical power RF2 can be supplied from high-frequency power supply 300.

[0082] In one embodiment, when performing method MT using plasma processing apparatus 1, high-frequency electrical power selectively passing through the first filter 35 can be supplied in step STa. High-frequency electrical power selectively passing through the second filter 37 can be supplied in step STb.

[0083] In one embodiment, when performing method MT using plasma processing apparatus 1A, a first high-frequency power RF1 can be supplied from high-frequency power supply 301 in step STa. A second high-frequency power RF2 can be supplied from high-frequency power supply 302 in step STb.

[0084] In one embodiment, when method MT is performed using a plasma processing apparatus including any of antennas 14A, 14B, and 14C, a first high-frequency electrical power RF1 may be supplied to the first antenna 141 in step STa. A second high-frequency electrical power RF2 may be supplied to the second antenna 142 in step STb.

[0085] In one implementation, method MT may include step STc. Figure 8 In this example, step STc is performed after step STa and before step STb. In this case, in step STa, only the first high-frequency electrical power RF1 is supplied from the first RF generation unit 31a to the antenna 14. In step STc, both the first high-frequency electrical power RF1 and the second high-frequency electrical power RF2 are supplied from the first RF generation unit 31a to the antenna 14 simultaneously. In step STb, only the second high-frequency electrical power RF2 is supplied from the first RF generation unit 31a to the antenna 14.

[0086] In one implementation, method MT may include steps STd and STe. Figure 8 In the example, steps STd and STe are performed before step STa. In step STd, high-frequency electrical power having multiple frequency components Sa1 to San is supplied to antenna 14 (see...). Figure 6 (a)

[0087] In step STe, the frequency of the component with the highest coupling efficiency among the multiple frequency components Sa1 to San supplied to antenna 14 is determined as the first frequency. The first frequency is based on multiple measurements representing the coupling efficiency of the plasma for each of the multiple frequency components Sa1 to San (see [reference]). Figure 6 (b)) determines the multiple measurements. These measurements can be, for example, the reflection coefficients of each of the multiple frequency components Sa1 to San, acquired by directional coupler 310 or sensor 33, or directional coupler 311 or sensor 331. Alternatively, the multiple measurements can be the load power levels of each of the multiple frequency components Sa1 to San, acquired by sensor 33 or sensor 331. The load power level is the difference between the power level of the traveling wave of each of the multiple frequency components Sa1 to San and the power level of the reflected wave. In step STa, a first high-frequency electrical power RF1 having the first frequency determined in step STe can be supplied.

[0088] In one embodiment, steps STd and STe can be performed again. In this case, during the repeated step STd, high-frequency electrical power comprising multiple frequency components Sb1 to Sbm can be supplied to antenna 14 (see [link to STd]). Figure 6 (c) , the multiple frequency components Sb1~Sbm have a frequency spacing narrower than the frequency spacing of the multiple frequency components Sa1~San. In the next step STe, the frequency of the component with the highest coupling efficiency among the multiple frequency components Sb1~Sbm supplied to antenna 14 can be updated to a first frequency. The first frequency is based on multiple measurements representing the coupling efficiency of the plasma for each of the multiple frequency components Sb1~Sbm (see [reference]). Figure 6 (d) is used to update. In step STa, a first high-frequency electrical power RF1 having a first frequency updated in the subsequent step STe can be supplied.

[0089] While various exemplary embodiments have been described above, the implementation is not limited to these exemplary embodiments, and various additions, omissions, substitutions, and modifications can be made. Furthermore, elements from different embodiments can be combined to form other embodiments.

[0090] Various exemplary embodiments included in this invention are described below [E1] to [E16].

[0091] [E1]

[0092] A plasma processing apparatus comprising:

[0093] A chamber containing a dielectric window;

[0094] The substrate support portion is disposed within the cavity;

[0095] At least one antenna is disposed outside the chamber, and the dielectric window is disposed between the substrate support and the at least one antenna;

[0096] A gas supply unit configured to supply gas to the chamber; and

[0097] The RF generation unit electrically connected to the at least one antenna,

[0098] The RF generation unit is configured to generate a first high-frequency electrical power having a first frequency and a second high-frequency electrical power having a second frequency.

[0099] The dielectric loss of the dielectric window at the second frequency is greater than the dielectric loss of the dielectric window at the first frequency.

[0100] [E2]

[0101] According to the plasma processing apparatus described in [E1], in which,

[0102] The RF generation unit is configured as follows:

[0103] The first high-frequency electrical power is generated to ignite the plasma within the cavity.

[0104] The second high-frequency electrical power is generated to sustain the plasma after ignition within the chamber.

[0105] [E3]

[0106] According to the plasma processing apparatus described in [E1] or [E2], wherein,

[0107] The RF generation unit consists of a single high-frequency power supply.

[0108] [E4]

[0109] According to any one of [E1] to [E3], the plasma processing apparatus further includes:

[0110] A matching unit connected between the RF generation unit and the at least one antenna;

[0111] A first filter connected between the matching unit and the at least one antenna is configured to selectively allow the first high-frequency electrical power to pass through;

[0112] A second filter connected between the matching unit and the at least one antenna is configured to selectively allow the second high-frequency electrical power to pass through; and

[0113] An impedance transformer connected between one of the first and second filters and the at least one antenna.

[0114] The matching unit is configured to match the load impedance at the frequency of the high-frequency electrical power selectively passing through the first filter and the other of the second filters with the output impedance of the RF generation unit.

[0115] The impedance transformer is configured to match the load impedance for the frequency of the high-frequency electrical power selectively passing through the filter with the output impedance of the RF generation unit.

[0116] [E5]

[0117] According to the plasma processing apparatus described in [E1] or [E2], wherein,

[0118] The RF generation unit includes:

[0119] A first high-frequency power supply configured to generate the first high-frequency electrical power; and

[0120] It is configured as a second high-frequency power source to generate the second high-frequency electrical power.

[0121] [E6]

[0122] According to any one of [E1] to [E5], the plasma processing apparatus wherein,

[0123] The at least one antenna includes:

[0124] The first antenna that receives the first high-frequency electrical power; and

[0125] A second antenna that receives the second high-frequency electrical power.

[0126] [E7]

[0127] According to any one of [E1] to [E6], the plasma processing apparatus wherein,

[0128] The RF generation unit is configured to simultaneously supply the first high-frequency power and the second high-frequency power to the at least one antenna after supplying only the first high-frequency power to the at least one antenna and before supplying only the second high-frequency power to the at least one antenna.

[0129] [E8]

[0130] According to any one of [E1] to [E7], the plasma processing apparatus wherein,

[0131] It also includes the control unit,

[0132] The control unit is configured as follows:

[0133] The RF generation unit is controlled to supply high-frequency electrical power having multiple frequency components to the at least one antenna.

[0134] Based on multiple measurements obtained by sensors representing the coupling efficiency of each of the multiple frequency components with respect to the plasma, the frequency of the component with the highest coupling efficiency among the multiple frequency components is determined as the first frequency.

[0135] [E9]

[0136] A plasma processing method, comprising:

[0137] (a) A step of supplying a first high-frequency electrical power having a first frequency from an RF generation unit to at least one antenna in a plasma processing apparatus, the plasma processing apparatus comprising:

[0138] The chamber containing the dielectric window;

[0139] The substrate support portion is disposed within the cavity;

[0140] The at least one antenna disposed outside the cavity, the dielectric window being disposed between the substrate support and the at least one antenna; and

[0141] The RF generation unit electrically connected to the at least one antenna; and

[0142] (b) The step of supplying a second high-frequency electrical power having a second frequency from the RF generation unit to the at least one antenna.

[0143] The dielectric loss of the dielectric window at the second frequency is greater than the dielectric loss of the dielectric window at the first frequency.

[0144] [E10]

[0145] According to the plasma processing method described in [E9], in which,

[0146] In (a), the first high-frequency electrical power is supplied from the RF generation unit to the at least one antenna to ignite the plasma within the cavity.

[0147] In (b), the second high-frequency electrical power is supplied from the RF generation unit to the at least one antenna to maintain the plasma after ignition within the cavity.

[0148] [E11]

[0149] According to the plasma processing method described in [E9] or [E10], wherein,

[0150] The RF generation unit consists of a single high-frequency power supply.

[0151] In (a), the first high-frequency electrical power is supplied from the single high-frequency power source.

[0152] In (b), the second high-frequency electrical power is supplied from the single high-frequency power source.

[0153] [E12]

[0154] According to any one of [E9] to [E11], the plasma processing method described herein, wherein,

[0155] The plasma processing device further includes:

[0156] A matching unit connected between the RF generation unit and the at least one antenna;

[0157] A first filter connected between the matching unit and the at least one antenna is configured to selectively allow the first high-frequency electrical power to pass through;

[0158] A second filter connected between the matching unit and the at least one antenna is configured to selectively allow the second high-frequency electrical power to pass through; and

[0159] An impedance transformer connected between one of the first and second filters and the at least one antenna.

[0160] The matching unit is configured to match the load impedance at the frequency of the high-frequency electrical power selectively passing through the first filter and the other of the second filters with the output impedance of the RF generation unit.

[0161] The impedance transformer is configured to match the load impedance for the frequency of the high-frequency electrical power selectively passing through the filter with the output impedance of the RF generation unit.

[0162] In (a), the high-frequency electrical power selectively passes through the first filter.

[0163] In (b), the high-frequency electrical power is supplied selectively through the second filter.

[0164] [E13]

[0165] According to the plasma processing method described in [E9] or [E10], wherein,

[0166] The RF generation unit includes:

[0167] A first high-frequency power supply configured to generate the first high-frequency electrical power; and

[0168] This constitutes a second high-frequency power source for generating the second high-frequency electrical power.

[0169] In (a), the first high-frequency electrical power is supplied from the first high-frequency power source.

[0170] In (b), the second high-frequency electrical power is supplied from the second high-frequency power source.

[0171] [E14]

[0172] According to any one of the plasma processing methods described in [E9] to [E13], wherein,

[0173] The at least one antenna includes:

[0174] The first antenna that receives the first high-frequency electrical power; and

[0175] The second antenna that receives the second high-frequency electrical power.

[0176] In (a), the first high-frequency electrical power is supplied to the first antenna.

[0177] In (b), the second high-frequency electrical power is supplied to the second antenna.

[0178] [E15]

[0179] According to any one of [E9] to [E14], the plasma processing method includes:

[0180] (c) After supplying only the first high-frequency electrical power from the RF generation unit to the at least one antenna in (a), and before supplying only the second high-frequency electrical power from the RF generation unit to the at least one antenna in (b), the step of simultaneously supplying the first high-frequency electrical power and the second high-frequency electrical power to the at least one antenna.

[0181] [E16]

[0182] According to any one of [E9] to [E15], the plasma processing method further includes:

[0183] (d) The step of supplying high-frequency electrical power having multiple frequency components to the at least one antenna; and

[0184] (e) The step of determining the frequency of the component with the highest coupling efficiency among the plurality of frequency components as the first frequency based on multiple measurements obtained by sensors representing the coupling efficiency of each of the plurality of frequency components with respect to the plasma.

[0185] In (a), the first high-frequency electrical power having the first frequency determined in (e) is supplied to the at least one antenna.

[0186] As can be understood from the above description, the various embodiments of the present invention are described in this specification for illustrative purposes, and various modifications can be made without departing from the scope and spirit of the invention. Therefore, the various embodiments disclosed in this specification are not intended to be limiting, and the true scope and spirit are given by the scope of the invention.

[0187] Force marking instructions

[0188] 1, 1A... Plasma processing device, 2... Control unit, 10... Chamber, 11... Substrate support unit, 14, 14A, 14B, 14C... Antenna, 20... Gas supply unit, 31a... First RF generation unit, 33, 331, 332... Sensors, 34, 341, 342... Matching unit, 35... First filter, 36... Impedance converter, 37... Second filter, 101... Dielectric window, 300, 301, 302... High-frequency power supply, 310, 311, 312... Directional coupler, RF1... First high-frequency power, RF2... Second high-frequency power.

Claims

1. A plasma processing device, characterized in that, include: A chamber containing a dielectric window; The substrate support portion is disposed within the cavity; At least one antenna is disposed outside the chamber, and the dielectric window is disposed between the substrate support and the at least one antenna; It is configured as a gas supply unit that supplies gas to the chamber; and The RF generation unit electrically connected to the at least one antenna, The RF generation unit is configured to generate a first high-frequency electrical power having a first frequency and a second high-frequency electrical power having a second frequency. The dielectric loss of the dielectric window at the second frequency is greater than the dielectric loss of the dielectric window at the first frequency. The RF generation unit is configured as follows: The first high-frequency electrical power is generated to ignite the plasma within the cavity. The second high-frequency electrical power is generated to sustain the plasma after ignition within the chamber.

2. The plasma processing apparatus according to claim 1, characterized in that: The RF generation unit consists of a single high-frequency power supply.

3. The plasma processing apparatus according to claim 1 or 2, characterized in that, Also includes: A matching unit connected between the RF generation unit and the at least one antenna; A first filter connected between the matching unit and the at least one antenna is configured to selectively allow the first high-frequency electrical power to pass through; A second filter connected between the matching unit and the at least one antenna is configured to selectively allow the second high-frequency electrical power to pass through; and An impedance transformer connected between one of the first and second filters and the at least one antenna. The matching unit is configured to match the load impedance at the frequency of the high-frequency electrical power selectively passing through the first filter and the other of the second filters with the output impedance of the RF generation unit. The impedance transformer is configured to match the load impedance for the frequency of the high-frequency electrical power selectively passing through the filter with the output impedance of the RF generation unit.

4. The plasma processing apparatus according to claim 1, characterized in that: The RF generation unit includes: A first high-frequency power supply configured to generate the first high-frequency electrical power; and It is configured as a second high-frequency power source to generate the second high-frequency electrical power.

5. The plasma processing apparatus according to claim 1 or 2, characterized in that: The at least one antenna includes: The first antenna that receives the first high-frequency electrical power; and A second antenna that receives the second high-frequency electrical power.

6. The plasma processing apparatus according to claim 1 or 2, characterized in that: The RF generation unit is configured to simultaneously supply the first high-frequency power and the second high-frequency power to the at least one antenna after supplying only the first high-frequency power to the at least one antenna and before supplying only the second high-frequency power to the at least one antenna.

7. The plasma processing apparatus according to claim 1 or 2, characterized in that: It also includes the control unit, The control unit is configured as follows: The RF generation unit is controlled to supply high-frequency electrical power having multiple frequency components to the at least one antenna. Based on multiple measurements obtained by sensors representing the coupling efficiency of each of the multiple frequency components with respect to the plasma, the frequency of the component with the highest coupling efficiency among the multiple frequency components is determined as the first frequency.

8. A plasma treatment method, characterized in that, include: (a) A step of supplying a first high-frequency electrical power having a first frequency from an RF generation unit to at least one antenna in a plasma processing apparatus, the plasma processing apparatus comprising: A chamber containing a dielectric window; The substrate support portion is disposed within the cavity; The at least one antenna disposed outside the cavity, the dielectric window being disposed between the substrate support and the at least one antenna; and The RF generation unit electrically connected to the at least one antenna; and (b) The step of supplying a second high-frequency electrical power having a second frequency from the RF generation unit to the at least one antenna. The dielectric loss of the dielectric window at the second frequency is greater than the dielectric loss of the dielectric window at the first frequency. In (a), the first high-frequency electrical power is supplied from the RF generation unit to the at least one antenna to ignite the plasma within the cavity. In (b), the second high-frequency electrical power is supplied from the RF generation unit to the at least one antenna to maintain the plasma after ignition within the cavity.

9. The plasma treatment method according to claim 8, characterized in that: The RF generation unit consists of a single high-frequency power supply. In (a), the first high-frequency electrical power is supplied from the single high-frequency power source. In (b), the second high-frequency electrical power is supplied from the single high-frequency power source.

10. The plasma processing method according to claim 8 or 9, characterized in that: The plasma processing device further includes: A matching unit connected between the RF generation unit and the at least one antenna; A first filter connected between the matching unit and the at least one antenna is configured to selectively allow the first high-frequency electrical power to pass through; A second filter connected between the matching unit and the at least one antenna is configured to selectively allow the second high-frequency electrical power to pass through; and An impedance transformer connected between one of the first and second filters and the at least one antenna. The matching unit is configured to match the load impedance at the frequency of the high-frequency electrical power selectively passing through the first filter and the other of the second filters with the output impedance of the RF generation unit. The impedance transformer is configured to match the load impedance for the frequency of the high-frequency electrical power selectively passing through the filter with the output impedance of the RF generation unit. In (a), the high-frequency electrical power selectively passes through the first filter. In (b), the high-frequency electrical power is supplied selectively through the second filter.

11. The plasma processing method according to claim 8, characterized in that: The RF generation unit includes: A first high-frequency power supply configured to generate the first high-frequency electrical power; and This constitutes a second high-frequency power source for generating the second high-frequency electrical power. In (a), the first high-frequency electrical power is supplied from the first high-frequency power source. In (b), the second high-frequency electrical power is supplied from the second high-frequency power source.

12. The plasma processing method according to claim 8 or 9, characterized in that: The at least one antenna includes: The first antenna that receives the first high-frequency electrical power; and The second antenna that receives the second high-frequency electrical power. In (a), the first high-frequency electrical power is supplied to the first antenna. In (b), the second high-frequency electrical power is supplied to the second antenna.

13. The plasma processing method according to claim 8 or 9, characterized in that, include: (c) After supplying only the first high-frequency electrical power from the RF generation unit to the at least one antenna in (a), and before supplying only the second high-frequency electrical power from the RF generation unit to the at least one antenna in (b), the step of simultaneously supplying the first high-frequency electrical power and the second high-frequency electrical power to the at least one antenna.

14. The plasma processing method according to claim 8 or 9, characterized in that, Also includes: (d) The step of supplying high-frequency electrical power having multiple frequency components to the at least one antenna; and (e) The step of determining the frequency of the component with the highest coupling efficiency among the plurality of frequency components as the first frequency based on multiple measurements obtained by sensors representing the coupling efficiency of each of the plurality of frequency components with respect to the plasma. In (a), the first high-frequency electrical power having the first frequency determined in (e) is supplied to the at least one antenna.

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