High-energy-storage-density dielectric material, capacitor and preparation method thereof

Through the doping regulation of Bi3(AnNp)Ti3O12 dielectric material, an amorphous-crystalline biphasic structure is constructed, which solves the problems of environmental pollution and poor high temperature resistance of ferroelectric thin film capacitors, and realizes capacitor preparation with high energy storage density and low electrical loss.

CN120473336AActive Publication Date: 2025-08-12KUNSHAN QINGYUAN ELECTRONIC TECHNOLOGY CO LTD
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Patent Information

Application Number
CN202510977852.4
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-07-16
Publication Date
2025-08-12
Estimated Expiration
2045-07-16

AI Technical Summary

Technical Problem

The existing ferroelectric film capacitor materials have problems of environmental pollution and poor high temperature resistance, especially in areas such as aerospace where high temperature requirements are limited.

Method used

Bi3(AnNp)Ti3O12 is used as a high energy storage density dielectric material. Through doping of elements A and elements N, the rotation and crystallization energy of oxygen octahedral are coordinated to construct an amorphous-crystalline biphasic structure. The preparation method includes spin coating of precursor solutions, heat treatment and electrode preparation.

Benefits of technology

The energy storage density and energy storage efficiency of the capacitor are improved, the electrical loss is reduced, the overall performance of the capacitor is improved, and the preparation method is simple and efficient.

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Abstract

The invention discloses a high-energy-storage-density dielectric material, a capacitor and a preparation method thereof, and belongs to the technical field of dielectric capacitors. The chemical general formula of the high-energy-storage-density dielectric material is Bi3 (AnNp) Ti3O12, and in the formula, A is selected from at least one of Nd, La, Sm, Eu, Er and Dy elements; n is selected from at least one of Ca, Sn, Sr, Cs, Nb, Hf and Ga elements; n + p = 1, 0 < n < 1, and 0 < p < 1. The energy storage density and the energy storage efficiency of the capacitor can be improved, and the electric loss is reduced.
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Citation Information

Patent Citations

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