Plasma etching cleaning method and phase change memory

Abstract

The invention provides a plasma etching cleaning method, which comprises the following steps of: performing plasma etching on a semi-finished semiconductor device, soaking the semi-finished semiconductor device in an ammonia water diluent for the first time, and soaking the semi-finished semiconductor device in a citric acid cleaning solution for the second time; the semiconductor device semi-finished product comprises at least one layer of thin film containing a carbon element and at least one layer of thin film containing an OTS gating material. Compared with the prior art, under the condition that etching cannot meet size correction, ammonia water has the etching capability on a film containing an OTS gating material and does not have the etching capability on a film containing a carbon element, one step of dilute ammonia water is added in the subsequent wet process to carry out OTS morphology correction, then citric acid is connected to carry out conventional cleaning, and the etching quality of the OTS is improved. The cleaning capacity can be enhanced, and meanwhile, the electrical size requirement can be met, so that the electrical parameters of the device and the wafer yield are improved.

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