Optical waveguide and heterojunction two-dimensional material integrated nonvolatile storage structure and application method thereof

Abstract

The invention provides an optical waveguide and heterojunction two-dimensional material integrated nonvolatile storage structure and an application method, and relates to the technical field of photoelectron integration. A heterojunction two-dimensional material layer is arranged in an evanescent field area of an optical waveguide layer, so that when an electric field pulse is applied to the heterojunction two-dimensional material layer through a positive electrode layer and a negative electrode layer, the heterojunction two-dimensional material layer is not subjected to evanescent field pulse; the heterojunction two-dimensional material layer can generate various non-volatile heterojunction polarization states, so that the optical constant and the optical state of the non-volatile storage structure are changed, the optical state can be stored by utilizing the non-volatility, and the optical memory function is realized. Even under the condition of power failure, the stored optical state cannot be lost, and ultra-low static power consumption can be realized. The overturning of the polarization state of the heterojunction is realized by the overturning of the heterojunction domain, so that the power consumption of the nonvolatile storage structure is far lower than the heat power consumption required by a phase change memory or a thermo-optic device.

Description

Technical Field

[0001] This invention relates to the field of optoelectronic integration technology, and in particular to a non-volatile storage structure and application method integrating an optical waveguide and a heterojunction two-dimensional material. Background Technology

[0002] With the surge in bandwidth demands of optical communication networks and the rise of optical computing and artificial intelligence hardware, on-chip optoelectronic integrated circuits (PICs) are developing towards higher density and lower power consumption. In optical network and optical computing systems, optical buffers and non-volatile storage units are key bottlenecks in realizing signal processing, routing switching, and weight storage.

[0003] Currently, achieving on-chip optical signal "storage" or "retention" mainly relies on two technological approaches. The first is volatile electro-optic modulators, such as Mach-Zehnder interferometers (MZI) or microring resonators (MRR) based on silicon (Si) or lithium niobate (LN). These can rapidly switch optical signals on and off, but their state depends on a continuously applied bias voltage; once power is off, the information is immediately lost, resulting in high static power consumption. The second is non-volatile phase-change memories, such as integrating phase-change materials onto waveguides. These utilize electrical or optical pulses to induce material transitions between crystalline and amorphous states, thereby achieving non-volatile optical memory, but this approach has higher power consumption and slower speed. Summary of the Invention

[0004] This invention provides a non-volatile storage structure and application method integrating optical waveguides and heterojunction two-dimensional materials to overcome the defects existing in related technologies.

[0005] This invention provides a non-volatile storage structure integrating an optical waveguide and a heterojunction two-dimensional material, comprising: an optical waveguide layer, a heterojunction two-dimensional material layer, a positive electrode layer, and a negative electrode layer; The optical waveguide layer is used to transmit optical signals; The heterojunction two-dimensional material layer is disposed in the evanescent field region of the optical waveguide layer; Both the positive electrode layer and the negative electrode layer are disposed on the heterojunction two-dimensional material layer, and are used to apply electric field pulses to the heterojunction two-dimensional material layer; The electric field pulse is used to drive the heterojunction two-dimensional material layer to generate at least two non-volatile heterojunction polarization states; the optical constants and optical states of the non-volatile storage structure are different under different heterojunction polarization states.

[0006] According to the present invention, a non-volatile storage structure integrating an optical waveguide and a heterojunction two-dimensional material is provided, wherein the optical state includes transmittance and / or phase.

[0007] According to the present invention, a non-volatile storage structure integrating an optical waveguide and a heterojunction two-dimensional material is provided, wherein the electric field pulse is specifically used for: Based on the interface electric dipole band modulation effect and the electric field-induced interlayer coupling modulation effect, the heterojunction two-dimensional material layer is driven to generate the heterojunction polarization state.

[0008] According to the present invention, a non-volatile storage structure integrating an optical waveguide and a heterojunction two-dimensional material is provided, wherein the number of polarization states of the heterojunction is determined based on at least one of the parameters of the amplitude, width, and number of the electric field pulse.

[0009] According to the present invention, a non-volatile memory structure integrating an optical waveguide and a heterojunction two-dimensional material is provided, wherein the application location of the non-volatile memory structure includes at least one of the following locations: On the optical resonant cavity; On one of the interference arms of the interferometer; Within each optical device in an optical neural network; On the optical waveguide connecting various optical devices in an optical neural network.

[0010] According to the present invention, a non-volatile storage structure integrating an optical waveguide and a heterojunction two-dimensional material is provided, wherein the optical resonant cavity includes at least one of a micro-ring resonant cavity and a photonic crystal cavity.

[0011] According to the present invention, a non-volatile storage structure integrating an optical waveguide and a heterojunction two-dimensional material is provided, wherein the heterojunction two-dimensional material layer includes a WSe2 material layer and a WS2 material layer; The overlapping region of the WSe2 material layer and the WS2 material layer constitutes a heterojunction.

[0012] According to the present invention, a non-volatile storage structure integrating an optical waveguide and a heterojunction two-dimensional material is provided, wherein the optical waveguide layer is integrated on a silicon photonics platform, a silicon nitride photonics platform, or a thin-film lithium niobate photonics platform.

[0013] According to the present invention, a non-volatile storage structure integrating an optical waveguide and a heterojunction two-dimensional material further includes a substrate; the optical waveguide layer is disposed on the substrate.

[0014] This invention also provides an application method for a non-volatile storage structure integrating an optical waveguide and a heterojunction two-dimensional material, comprising: An electric field pulse is applied to the heterojunction two-dimensional material layer of the non-volatile memory structure based on the positive electrode layer and negative electrode layer of the non-volatile memory structure. After the electric field pulse is removed, the heterojunction two-dimensional material layer triggers a power-off optical memory to store the optical state, and after injecting an optical signal into the optical waveguide layer of the non-volatile storage structure, the optical signal output by the optical waveguide layer is detected. The optical state is read based on the optical signal injected into and output from the optical waveguide layer.

[0015] The present invention provides a non-volatile memory structure and application method integrating optical waveguides and heterojunction two-dimensional materials. By placing a heterojunction two-dimensional material layer in the evanescent field region of the optical waveguide layer, when an electric field pulse is applied to the heterojunction two-dimensional material layer through the positive and negative electrode layers, the heterojunction two-dimensional material layer can generate various non-volatile heterojunction polarization states. This leads to changes in the optical constants and optical states of the non-volatile memory structure, which can be stored using non-volatility to achieve optical memory function. Even in the event of power failure, the stored optical states are not lost, achieving ultra-low static power consumption. Since the reversal of the heterojunction polarization state is achieved by heterojunction domain reversal, the power consumption of this non-volatile memory structure is far lower than the thermal power consumption required by phase-change memories or thermo-optical devices. Because the potential barrier changes between heterojunction layers can reach the nanosecond level, far faster than the millisecond speed of phase-change memories (PCMs), non-volatile memory structures possess high response speeds. This solves the problems of traditional optical modulators, such as the need for continuous bias voltage, high power consumption, and susceptibility to loss upon power failure, as well as the problems of high power consumption and slow response speed of PCMs. This is of great significance to the field of optoelectronic integration. Furthermore, the combination of non-volatile memory structures with optical waveguides and two-dimensional heterojunction material layers enables electrically controlled writing and optical readout, making them suitable for optoelectronic hybrid computing systems. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in this invention or related technologies, the accompanying drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of this invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 This is a schematic diagram of the non-volatile storage structure integrating optical waveguides and heterojunction two-dimensional materials provided by the present invention. Figure 2 This is a schematic diagram illustrating the physical mechanism of electric field polarization of the heterojunction two-dimensional material layer in the non-volatile storage structure integrating optical waveguide and heterojunction two-dimensional material provided by the present invention.

[0018] Figure 3 This is a schematic diagram illustrating the physical mechanism by which the heterojunction two-dimensional material layer is polarized by another electric field in the non-volatile storage structure integrating optical waveguide and heterojunction two-dimensional material provided by the present invention.

[0019] Figure 4 This is a schematic diagram illustrating the multistable programmable optical storage characteristics achieved by the non-volatile storage structure integrating optical waveguides and heterojunction two-dimensional materials provided by this invention.

[0020] Figure 5 This is a schematic diagram showing that the interlayer conductivity of the non-volatile storage structure integrating optical waveguide and heterojunction two-dimensional material provided by the present invention increases over a long period of time with the number of electric field pulses in the on state.

[0021] Figure 6 This is a schematic diagram showing how the interlayer conductivity of the heterojunction is suppressed over a long period of time in the off-state by the number of electric field pulses in the non-volatile storage structure integrating optical waveguide and heterojunction two-dimensional material provided by the present invention.

[0022] Figure 7 This is a schematic diagram of the non-volatile storage structure integrating optical waveguide and heterojunction two-dimensional material provided by the present invention on one of the interferometer arms of a Mach-Zehnder interferometer.

[0023] Figure 8 This is a schematic diagram of the structure provided by the present invention, which integrates a non-volatile storage structure of optical waveguide and heterojunction two-dimensional material on a microring resonant cavity.

[0024] Figure 9 This is a flowchart illustrating the application method of the non-volatile storage structure integrating optical waveguides and heterojunction two-dimensional materials provided by the present invention. Detailed Implementation

[0025] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are within the scope of protection of this invention.

[0026] The present invention provides a non-volatile storage structure integrating an optical waveguide and a heterojunction two-dimensional material, comprising: an optical waveguide layer, a heterojunction two-dimensional material layer, a positive electrode layer, and a negative electrode layer; The optical waveguide layer is used to transmit optical signals; The heterojunction two-dimensional material layer is disposed in the evanescent field region of the optical waveguide layer; Both the positive electrode layer and the negative electrode layer are disposed on the heterojunction two-dimensional material layer, and are used to apply electric field pulses to the heterojunction two-dimensional material layer; The electric field pulse is used to drive the heterojunction two-dimensional material layer to generate at least two non-volatile heterojunction polarization states; the optical constants and optical states of the non-volatile storage structure are different under different heterojunction polarization states.

[0027] Specifically, such as Figure 1 As shown, the heterojunction two-dimensional material layer in the non-volatile memory structure may include a first two-dimensional material layer 1 and a second two-dimensional material layer 2. The first two-dimensional material layer 1 is covered on the upper surface of the optical waveguide layer 3 by processes such as mechanical peeling. The second two-dimensional material layer 2 can cover the first two-dimensional material layer 1, and the overlapping region of the first two-dimensional material layer 1 and the second two-dimensional material layer 2 constitutes a heterojunction. The overlapping region of the first two-dimensional material layer 1 and the second two-dimensional material layer 2 can be set in the evanescent field region of the optical waveguide layer 3, that is, the heterojunction is located in the evanescent field region of the optical waveguide layer 3, which is used for coupling with the optical field to achieve strong optical field-material interaction.

[0028] Here, the optical waveguide layer 3 is used to transmit optical signals, which can be laser signals. For example... Figure 1 As shown, the optical waveguide layer 3 can be formed on the substrate 6. At the same time, a first two-dimensional material layer 1 can be first covered on the substrate 6 and the optical waveguide layer 3, and then a second two-dimensional material layer 2 can be covered on the first material layer 1 and the substrate 6, thereby forming a heterojunction two-dimensional material layer on the upper surface of the optical waveguide layer 3.

[0029] In the non-volatile storage structure, the positive electrode layer 4 and the negative electrode layer 5 constitute an electrode pair, used to apply electric field pulses to the heterojunction two-dimensional material layer. The positive electrode layer 4 and the negative electrode layer 5 can be disposed on the heterojunction two-dimensional material layer, such as... Figure 1 As shown, the positive electrode layer 4 and the negative electrode layer 5 can be disposed on the first two-dimensional material layer 1 and the second two-dimensional material layer 2 respectively; or they can be disposed on both sides of the heterojunction two-dimensional material layer, for example, they can be disposed at both ends of the first two-dimensional material layer 1 in the extension direction of the optical waveguide layer 3, or they can be disposed at both ends of the second two-dimensional material layer 2 in the extension direction of the optical waveguide layer 3, without specific limitations here.

[0030] Since the two-dimensional heterojunction material layer has intrinsic non-volatile polarization characteristics that can be reversed under an electric field, this embodiment of the invention employs an electric field-driven band modulation type non-volatile optical modulation mechanism. By applying an electric field pulse to the two-dimensional heterojunction material layer, polarization reversal and charge redistribution between the heterojunction layers are induced, thereby changing the band barrier height and carrier concentration between the heterojunction layers. This drives the two-dimensional heterojunction material layer to generate at least two non-volatile heterojunction polarization states, thereby causing a stable change in the optical constants of the non-volatile storage structure, thus realizing the non-volatile modulation and storage of the optical state of the non-volatile storage structure.

[0031] Therefore, it can be seen that the implementation principle of non-volatile memory structure is based on the modulation and storage of optical states by the non-volatile property of heterojunction polarization.

[0032] Here, the optical constants of a nonvolatile memory structure can include the refractive index and extinction coefficient of the optical waveguide layer, as well as the refractive index and extinction coefficient of the heterojunction two-dimensional material layer. The optical state of a nonvolatile memory structure refers to its optical response, which can be characterized by the transmittance and / or phase of the optical signal.

[0033] The polarization states of a heterojunction can include two limiting states: a high-resistance state and a low-resistance state. For example... Figure 2 As shown, in the high-resistivity state, the interlayer barrier field of the heterojunction causes the carriers in the two-dimensional material layer of the heterojunction to be deplete, and the energy band bends. At this time, the two-dimensional material layer of the heterojunction exhibits strong absorption of the wavelength of the optical signal transmitted by the optical waveguide, and has a high extinction coefficient and a specific refractive index n1. The corresponding optical state can be called the "low transmission state" or the "0" state.

[0034] like Figure 3 As shown, in the low-resistivity state, the reverse interlayer barrier field of the heterojunction leads to carrier accumulation and different band bending. At this time, the two-dimensional material layer of the heterojunction exhibits weak absorption of the wavelength of the optical signal transmitted by the optical waveguide, with a low extinction coefficient and different refractive indices n2. This corresponds to another optical state, which can be called the "high-transmission state" or the "1" state.

[0035] It should be noted that, Figure 2 and Figure 3 In the diagram, the arrow points to the direction E of the electric field applied through the positive and negative electrode layers. Figure 2 and Figure 3 The electric field in them is in the opposite direction.

[0036] Since the bistable nature of the refractive index and absorption coefficient depends on the non-volatile heterojunction polarization, the non-volatile storage structure can realize the transformation from electrical bistable to optical bistable, thus forming an optical storage state.

[0037] The non-volatile memory structure integrating an optical waveguide and a heterojunction two-dimensional material provided in this embodiment of the invention includes: an optical waveguide layer, a heterojunction two-dimensional material layer, a positive electrode layer, and a negative electrode layer. By placing the heterojunction two-dimensional material layer within the evanescent field region of the optical waveguide layer, when an electric field pulse is applied to the heterojunction two-dimensional material layer through the positive and negative electrode layers, the heterojunction two-dimensional material layer can generate various non-volatile heterojunction polarization states, thereby causing changes in the optical constants and optical states of the non-volatile memory structure. The optical states can be stored using non-volatility, achieving optical memory functionality. Even in the event of power failure, the stored optical states are not lost, achieving ultra-low static power consumption. Since the reversal of the heterojunction polarization state is achieved by heterojunction domain reversal, the power consumption of this non-volatile memory structure is far lower than the thermal power consumption required by phase-change memories or thermo-optical devices. Because the potential barrier changes between heterojunction layers can reach the nanosecond level, far faster than the millisecond speed of phase-change memories (PCMs), non-volatile memory structures possess high response speeds. This solves the problems of traditional optical modulators, such as the need for continuous bias voltage, high power consumption, and susceptibility to loss upon power failure, as well as the problems of high power consumption and slow response speed of PCMs. This is of great significance to the field of optoelectronic integration. Moreover, the combination of non-volatile memory structures with optical waveguides and two-dimensional heterojunction material layers enables electrically controlled writing and optical state readout, making them suitable for optoelectronic hybrid computing systems.

[0038] Based on the above embodiments, the electric field pulse is specifically used for: Based on the interface electric dipole band modulation effect and the electric field-induced interlayer coupling modulation effect, the heterojunction two-dimensional material layer is driven to generate the heterojunction polarization state.

[0039] Specifically, after applying an electric field pulse to the heterojunction two-dimensional material layer, it can trigger the modulation of the interface electric dipole band and the modulation of interlayer coupling induced by the electric field, thereby achieving a stable change in the band barrier height and carrier concentration, and driving the heterojunction two-dimensional material layer to generate different heterojunction polarization states.

[0040] Based on the above embodiments, the number of heterojunction polarization states is determined based on at least one of the parameters of the amplitude, width, and number of the electric field pulses.

[0041] Specifically, the number of polarization states of a heterojunction can be determined by at least one of the parameters of the amplitude, width, and number of electric field pulses applied to the two-dimensional material layer of the heterojunction.

[0042] By changing the parameters of the electric field pulse, the barrier height between heterojunction layers can be controlled, thereby achieving incomplete state changes and obtaining multiple stable intermediate states.

[0043] Here, each intermediate state corresponds to a different optical constant, which makes the transmittance of the optical waveguide layer exhibit a stepped, non-volatile stable level, enabling the non-volatile storage structure to store not only binary optical states, but also multi-level intermediate states.

[0044] like Figure 4 As shown, the horizontal axis represents the number of electric field pulses, and the vertical axis represents the interlayer conductance of the heterojunction in the two-dimensional heterojunction material layer. Different amplitude voltages are applied to the two-dimensional heterojunction material layer through the positive and negative electrode layers to apply electric field pulses of different amplitudes. Here, the different amplitude voltages can include low voltage, medium voltage, and high voltage.

[0045] from Figure 4 It can be seen that for the same voltage amplitude, the interlayer conductance of the heterojunction continuously increases with the increase of the number of electric field pulses. Furthermore, for the same number of electric field pulses, the interlayer conductance of the heterojunction continuously increases with the increase of the voltage amplitude. Further, if the interlayer conductance of the heterojunction is proportional to the dielectric constant, the refractive index increases, and the phase of the optical signal lags; if the interlayer conductance of the heterojunction is inversely proportional to the dielectric constant, the refractive index decreases, and the phase of the optical signal advances. Simultaneously, due to the change in the interlayer conductance of the heterojunction, the extinction coefficient also changes, and the transmittance of the optical signal also changes.

[0046] like Figure 5 The diagram illustrates the long-term potentiation (LTP) of interlayer conductance in a heterojunction under open-state conditions, which increases with the number of electric field pulses. Figure 5 It can be seen that in the open state, as the number of electric field pulses increases, the interlayer conductivity of the heterojunction increases and then tends to reach equilibrium.

[0047] like Figure 6 The diagram illustrates the long-term depression of interlayer conductance in a heterojunction under off-state conditions, which is influenced by the number of electric field pulses. Figure 6 It can be seen that in the off state, as the number of electric field pulses increases, the interlayer conductivity of the heterojunction decreases and then tends to reach equilibrium.

[0048] In this embodiment of the invention, by changing the parameters of the electric field pulse, the non-volatile memory structure is made to have multistable programming characteristics.

[0049] Based on the above embodiments, the application locations of the non-volatile memory structure include at least one of the following locations: On the optical resonant cavity; On one of the interference arms of the interferometer; Within each optical device in an optical neural network; On the optical waveguide connecting various optical devices in an optical neural network.

[0050] Specifically, the non-volatile storage structure provided in this embodiment of the invention can be applied to various scenarios. Its application location can include at least one of the following: an optical resonant cavity, an interferometer arm of an interferometer, optical devices in an optical neural network, and optical waveguides connecting the optical devices in the optical neural network. Here, the optical resonant cavity can include at least one of a micro-ring resonant cavity and a photonic crystal cavity. The interferometer can be a Mach-Zehnder interferometer (MZI). Figure 7 As shown, the non-volatile memory structure is located on one of the interferometer arms of the MZI, and the optical waveguide layer 3 in the non-volatile memory structure serves as one of the interferometer arms of the MZI to transmit optical signals.

[0051] By applying an electric field pulse to the two-dimensional material layer of the heterojunction in the non-volatile storage structure, the effective refractive index of the interferometer arm can be changed non-volatilely, thereby adjusting the phase difference between the two interferometer arms and thus changing the output light intensity of the MZI.

[0052] like Figure 8 As shown, the non-volatile storage structure is located on the microring resonator (MRR), and the optical waveguide layer 3 in the non-volatile storage structure completely covers the microring of the MRR for transmitting optical signals.

[0053] By applying an electric field pulse to the two-dimensional material layer of the heterojunction in a non-volatile memory structure, the effective refractive index of the microring in the MRR can be non-volatilely changed, causing a shift in the resonant wavelength of the microring. For a fixed-wavelength optical signal transmitted through the optical waveguide layer in the non-volatile memory structure, the shift in the resonant peak will change its transmittance and / or phase, and this change can be amplified by the cavity enhancement effect of the microring resonator.

[0054] An optical neural network (ONN) includes multiple optical devices and optical waveguides connecting these devices. At least one location in each optical device and in the optical waveguides connecting them can be integrated with a non-volatile memory structure. The optical devices in the ONN can include microring resonators, Mach-Zehnder interferometers, and spatial light modulators (SLMs), etc., without specific limitations here.

[0055] For example, non-volatile memory structures can be integrated into the optical waveguides connecting various optical devices. Each non-volatile memory structure can simulate the photosynaptic weights in an optical neural network.

[0056] During computation, optical neural networks transmit optical signals through an input waveguide. Weighting modulation is achieved at each non-volatile memory structure by altering the transmittance and / or phase. These modulated signals are then coherently or incoherently superimposed on the output waveguide to perform matrix operations. Due to the non-volatile nature of the non-volatile memory structures, high-speed optical parallel computation can be performed with zero static power consumption.

[0057] Based on the above embodiments, the heterojunction two-dimensional material layer includes a WSe2 material layer and a WS2 material layer; The overlapping region of the WSe2 material layer and the WS2 material layer constitutes a heterojunction.

[0058] Specifically, the first two-dimensional material layer 1 can be a WS2 material layer, and the second two-dimensional material layer 2 can be a WSe2 material layer. The heterojunction two-dimensional material layer formed therefrom is a ferroelectric heterojunction two-dimensional material, and the heterojunction formed by the overlapping area of ​​the first two-dimensional material layer 1 and the second two-dimensional material layer 2 is a two-dimensional ferroelectric heterojunction.

[0059] Based on the above embodiments, the optical waveguide layer is integrated into a silicon photonics platform, a silicon nitride photonics platform, or a thin-film lithium niobate photonics platform.

[0060] Specifically, the optical waveguide layer 3 can be integrated into a silicon (Si) photonic platform, a silicon nitride (SiN) photonic platform, or a thin-film lithium niobate (TFLN) photonic platform, enabling the non-volatile memory structure to have high integration.

[0061] like Figure 9 As shown, based on the above embodiments, this invention also provides an application method for a non-volatile storage structure integrating an optical waveguide and a heterojunction two-dimensional material, the method comprising: S91, based on the positive electrode layer and negative electrode layer of the non-volatile memory structure, an electric field pulse is applied to the heterojunction two-dimensional material layer of the non-volatile memory structure; S92, after the electric field pulse is removed, the heterojunction two-dimensional material layer triggers power-off optical memory to store the optical state, and after injecting an optical signal into the optical waveguide layer of the non-volatile storage structure, the optical signal output by the optical waveguide layer is detected. S93, based on the optical signal injected and the optical signal output from the optical waveguide layer, read the optical state.

[0062] Specifically, when applying the non-volatile memory structure integrating optical waveguides and heterojunction two-dimensional materials provided in the above embodiments, step S91 can be executed first, using the positive and negative electrode layers of the non-volatile memory structure to apply an electric field pulse to the heterojunction two-dimensional material layer of the non-volatile memory structure. This electric field pulse is a write electric field used to write the optical state. Therefore, step S91 is a write step.

[0063] The electric field pulse can be a positive or negative electric pulse that exceeds the coercive electric field of the heterojunction two-dimensional material layer. For example, applying a positive electric field pulse can cause the polarization of the heterojunction two-dimensional material layer to be upward, while applying a negative electric field pulse can cause the polarization of the heterojunction two-dimensional material layer to be downward.

[0064] Then, step S92 is executed. After the electric field pulse is removed, i.e., the power is turned off, the heterojunction two-dimensional material layer triggers power-off optical memory. Under zero bias conditions, the polarization state and corresponding optical constants of the heterojunction are maintained for a long time, realizing power-off optical memory and storing the optical state. This process is the holding process.

[0065] Subsequently, after injecting an optical signal into the optical waveguide layer of the non-volatile memory structure, the optical signal output by the optical waveguide layer is detected. This optical signal is the readout signal, used to read the stored optical state.

[0066] Finally, step S93 is executed, and the optical state is obtained by comparing the intensity difference and phase difference between the optical signal injected into the optical waveguide layer and the optical signal output.

[0067] The application method of the non-volatile storage structure integrating optical waveguide and heterojunction two-dimensional material provided in the embodiments of the present invention utilizes the non-volatility of heterojunction polarization to realize electronically controlled writing and optical state readout, and can be used in optoelectronic hybrid computing systems.

[0068] In summary, the non-volatile memory structure and application method integrating optical waveguides and heterojunction two-dimensional materials provided in this invention are the first to apply the interlayer coupling-band modulation-optical bistable mechanism to optical state storage, realizing purely electrically controlled optical non-volatile memory driven by a heterojunction. By utilizing the interaction between the non-volatile polarization characteristics of the heterojunction two-dimensional material and the optical field, ultra-low static power consumption, fast response, and multistable programmable optical memory functions are achieved, providing a novel and efficient device solution for on-chip optical caches, optically programmable filters, and optical neural network synaptic units.

[0069] The device embodiments described above are merely illustrative. The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the modules can be selected to achieve the purpose of this embodiment according to actual needs. Those skilled in the art can understand and implement this without any creative effort.

[0070] Through the above description of the embodiments, those skilled in the art can clearly understand that each embodiment can be implemented by means of software plus necessary general-purpose hardware platforms, and of course, it can also be implemented by hardware. Based on this understanding, the above technical solutions, in essence or the parts that contribute to the related technology, can be embodied in the form of software products. This computer software product can be stored in a computer-readable storage medium, such as ROM / RAM, magnetic disk, optical disk, etc., and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute the methods described in the various embodiments or some parts of the embodiments.

[0071] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A non-volatile storage structure integrating an optical waveguide and a heterojunction two-dimensional material, characterized in that, include: Optical waveguide layer, heterojunction two-dimensional material layer, positive electrode layer and negative electrode layer; The optical waveguide layer is used to transmit optical signals; The heterojunction two-dimensional material layer is disposed in the evanescent field region of the optical waveguide layer; Both the positive electrode layer and the negative electrode layer are disposed on the heterojunction two-dimensional material layer, and are used to apply electric field pulses to the heterojunction two-dimensional material layer; The electric field pulse is used to drive the heterojunction two-dimensional material layer to generate at least two non-volatile heterojunction polarization states. The optical constants and optical states of the non-volatile memory structure are different under different heterojunction polarization states.

2. The non-volatile storage structure integrating optical waveguides and heterojunction two-dimensional materials according to claim 1, characterized in that, The optical state includes transmittance and / or phase.

3. The non-volatile storage structure integrating optical waveguides and heterojunction two-dimensional materials according to claim 1, characterized in that, The electric field pulse is specifically used for: Based on the interface electric dipole band modulation effect and the electric field-induced interlayer coupling modulation effect, the heterojunction two-dimensional material layer is driven to generate the heterojunction polarization state.

4. The non-volatile storage structure integrating optical waveguides and heterojunction two-dimensional materials according to claim 1, characterized in that, The number of heterojunction polarization states is determined based on at least one of the parameters of the amplitude, width, and number of electric field pulses.

5. The non-volatile storage structure integrating optical waveguides and heterojunction two-dimensional materials according to claim 1, characterized in that, The application locations of the non-volatile memory structure include at least one of the following locations: On the optical resonant cavity; On one of the interference arms of the interferometer; Within each optical device in an optical neural network; On the optical waveguide connecting various optical devices in an optical neural network.

6. The non-volatile storage structure integrating optical waveguides and heterojunction two-dimensional materials according to claim 5, characterized in that, The optical resonant cavity includes at least one of a micro-ring resonant cavity and a photonic crystal cavity.

7. The non-volatile storage structure integrating optical waveguides and heterojunction two-dimensional materials according to any one of claims 1-6, characterized in that, The heterojunction two-dimensional material layer includes a WSe2 material layer and a WS2 material layer; The overlapping region of the WSe2 material layer and the WS2 material layer constitutes a heterojunction.

8. The non-volatile storage structure integrating optical waveguides and heterojunction two-dimensional materials according to any one of claims 1-6, characterized in that, The optical waveguide layer is integrated into a silicon photonics platform, a silicon nitride photonics platform, or a thin-film lithium niobate photonics platform.

9. The non-volatile storage structure integrating an optical waveguide and a heterojunction two-dimensional material according to any one of claims 1-6, characterized in that, It also includes the substrate; The optical waveguide layer is disposed on the substrate.

10. An application method for a non-volatile storage structure integrating an optical waveguide and a heterojunction two-dimensional material as described in any one of claims 1-9, characterized in that, include: An electric field pulse is applied to the heterojunction two-dimensional material layer of the non-volatile memory structure based on the positive electrode layer and negative electrode layer of the non-volatile memory structure. After the electric field pulse is removed, the heterojunction two-dimensional material layer triggers a power-off optical memory to store the optical state, and after injecting an optical signal into the optical waveguide layer of the non-volatile storage structure, the optical signal output by the optical waveguide layer is detected. The optical state is read based on the optical signal injected into and output from the optical waveguide layer.

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