High-uniformity semiconductor heat treatment equipment heat preservation structure capable of being rapidly cooled

Abstract

The invention relates to the technical field of semiconductor process equipment, and discloses a high-uniformity semiconductor heat treatment equipment heat preservation structure capable of being rapidly cooled, the high-uniformity semiconductor heat treatment equipment heat preservation structure comprises a main body assembly and a positioning assembly, the main body assembly comprises a furnace body shell and a wafer boat arranged in the furnace body shell, and an inner layer high heat conduction layer is arranged on the outer side of the wafer boat; an outer low-heat-conduction insulating layer is arranged on the outer side of the inner high-heat-conduction layer; the positioning assembly comprises a heat dissipation piece and a fixing piece installed on the outer side of the heat dissipation piece, and the fixing piece is connected with a locking piece. The heat dissipation piece comprises a heat dissipation pipe and a heat dissipation medium channel formed in the heat dissipation pipe, and the outer side of the heat dissipation pipe is connected with a connecting pipe; the problems that in the prior art, the axial thermal field uniformity of the inner wall part of a furnace body heating chamber is poor, the constant-temperature area range is reduced, meanwhile, thermal insulation materials are pulverized and cracked due to local overheating, the service life of a furnace body is shortened, the cooling speed is low, a process cooling curve is out of control, and the product quality is affected are solved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor process equipment, in particular to a thermal insulation structure of semiconductor heat treatment equipment capable of rapid cooling and high uniformity. Background Art

[0002] High-, medium-, and low-temperature processes in semiconductor manufacturing, such as thin film growth, diffusion annealing, oxidation, and chemical vapor deposition, all rely on precise temperature control provided by heating devices. This heating device is called the vertical furnace body. A crucial component of the furnace body is the insulation structure. This structure must maintain uniformity under extreme temperatures, prevent heat loss, and ensure furnace equipment stability and process repeatability.

[0003] Currently, process equipment often uses rod-shaped, sheet-shaped, and ring-shaped heaters of varying structural shapes as heat sources within the furnace body. The axial thermal field uniformity within the inner wall of the furnace heating chamber is poor, resulting in a reduced constant temperature zone and a reduction in the WPH of the process equipment. Given the fixed internal dimensions of the heating chamber in semiconductor vertical furnaces, as wafer size continues to increase, radial temperature nonuniformity can easily lead to defects such as cracks, slippage, and poor film thickness uniformity at the wafer edge, reducing product process yield.

[0004] The heater is tightly attached to the inner side of the insulation layer, and the part in contact with the heater is locally overheated for a long time, which is prone to defects such as cracking and powdering, further leading to problems such as deterioration of the thermal field uniformity of the furnace, environmental pollution, and increased energy consumption, which have an adverse impact on the yield of the finished wafers and the service life of the equipment.

[0005] Insulation materials generally use materials with low thermal conductivity, which is beneficial to controlling the heat loss of the furnace body. Conversely, when the furnace body needs to be cooled, the current method of heat dissipation is mostly adopted by passing cooling water outside the insulation material and increasing the air flow. However, the low thermal conductivity leads to limited conduction of heat accumulated inside the heating chamber through the insulation material, and the cooling speed is slow, resulting in uncontrolled process cooling curve and affecting product quality. Summary of the Invention

[0006] In order to solve the problems in the above-mentioned prior art that the axial thermal field uniformity of the inner wall of the furnace heating chamber is poor, resulting in a reduction in the constant temperature zone, and local overheating causes pulverization and cracking of the insulation material, which reduces the service life of the furnace body. At the same time, the cooling speed is slow, resulting in a loss of control of the process cooling curve and affecting product quality, the present invention provides a high-uniformity semiconductor heat treatment equipment insulation structure that can be cooled quickly. The present invention is achieved through the following technical solutions.

[0007] A thermal insulation structure for semiconductor heat treatment equipment capable of rapid cooling and high uniformity includes a main assembly and a positioning assembly. The main assembly includes a furnace shell and a wafer boat disposed within the furnace shell. The wafer boat is provided with an inner high thermal conductivity layer on the outside, and an outer low thermal conductivity insulation layer is provided on the outside of the inner high thermal conductivity layer. The positioning assembly includes a heat sink and a fixing member installed on the outside of the heat sink. The fixing member is connected to a locking member, and a furnace wire is arranged on the inner side of the locking member.

[0008] As a preferred solution of the thermal insulation structure of the semiconductor heat treatment equipment with high uniformity capable of rapid cooling according to the present invention, the wafer boat is arranged inside the positioning assembly, with a preset gap between the wafer boat and the positioning assembly.

[0009] As a preferred solution of the thermal insulation structure of the semiconductor heat treatment equipment with high uniformity capable of rapid cooling according to the present invention, the heat dissipation element includes a heat dissipation pipe and a heat dissipation medium channel opened inside the heat dissipation pipe, and a connecting pipe is connected to the outside of the heat dissipation pipe.

[0010] As a preferred solution of the thermal insulation structure of the semiconductor heat treatment equipment capable of rapid cooling and high uniformity according to the present invention, the heat sinks are evenly distributed at equal intervals outside the inner high thermal conductivity layer.

[0011] As a preferred solution of the thermal insulation structure of the semiconductor heat treatment equipment with high uniformity and rapid cooling according to the present invention, one side of the heat dissipation pipe is attached to the outer side of the inner high thermal conductivity layer, and the other side of the heat dissipation pipe is connected to a connecting pipe.

[0012] As a preferred solution of the thermal insulation structure of the semiconductor heat treatment equipment with high uniformity capable of rapid cooling according to the present invention, the fixing member includes a fixed pressure plate and connecting plates connected to both ends of the fixed pressure plate.

[0013] As a preferred solution for the insulation structure of the semiconductor heat treatment equipment with high uniformity that can be quickly cooled according to the present invention, the cross-sectional shape of the fixed pressure plate is "U"-shaped, and the connecting plate is provided with a through-hole structure for mating and connecting with the locking piece.

[0014] As a preferred solution of the insulation structure of the semiconductor heat treatment equipment with high uniformity that can be quickly cooled as described in the present invention, the locking part includes a positioning block and a limit baffle connected to the positioning block, and a positioning pin is connected to one side of the positioning block, and a connecting screw is fixedly connected to the positioning block, and the other end of the connecting screw is connected to a connecting nut.

[0015] As a preferred solution of the insulation structure of the semiconductor heat treatment equipment with high uniformity that can be cooled quickly according to the present invention, the locking parts are symmetrically arranged on both sides of the furnace wire, and the connecting screw passes through the inner high thermal conductivity layer and is fixedly connected to the fixing part.

[0016] As a preferred solution of the thermal insulation structure of the semiconductor heat treatment equipment with high uniformity capable of rapid cooling according to the present invention, the positioning pin is fixedly connected to the inner high thermal conductivity layer, and the positioning pin is cooperatively connected to the positioning block.

[0017] The present invention has the following beneficial effects: 1. Through the arrangement of an inner high-thermal conductivity layer and an outer low-thermal conductivity insulation layer, the insulation materials are designed in layers, and the inner and outer materials play different roles. The inner high-thermal conductivity layer is made of high-thermal conductivity materials such as boron nitride ceramics. It is in contact with the furnace wire and can quickly conduct the heat generated by the furnace wire along the inner high-thermal conductivity layer. Compared with existing materials, it avoids local heat accumulation on the inner wall of the furnace body and achieves uniform temperature distribution on the inner wall of the furnace body. The heat of the furnace wire is evenly distributed to the inner wall of the furnace body, which helps to solve the problem of poor thermal field uniformity near the inner wall of the furnace body, thereby maximizing the distribution ratio of the constant temperature zone. At the same time, it helps to solve problems such as pulverization and cracking of the insulation material caused by local overheating, thereby extending the service life of the furnace body and avoiding debris contamination of the equipment, deterioration of thermal field uniformity leading to reduced wafer yield, and loss of effective heat from the furnace body leading to increased equipment energy consumption.

[0018] 2. Through the setting of the heat sink, the heat sink is arranged in the middle layer between the inner high thermal conductivity layer and the outer low thermal conductivity insulation layer, and the pipeline is close to the outside of the inner high thermal conductivity layer. Compared with the existing products that use low thermal conductivity material insulation layer and place the heat sink outside the furnace body, due to the higher thermal conductivity and smaller conduction distance, the heat can be conducted to the heat sink faster through the inner high thermal conductivity layer, thereby achieving rapid cooling. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solution of the present invention, the following is a brief introduction to the drawings required for use in the description of the specific implementation methods. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0020] Figure 1 : A schematic diagram of the overall front cross-sectional structure of the present invention; Figure 2 : The present invention Figure 1 Schematic diagram of the enlarged structure at A in the middle; Figure 3 : A schematic diagram of the overall side cross-sectional structure of the present invention; Figure 4 : A schematic structural diagram of the positioning assembly in the present invention; Figure 5 : A schematic cross-sectional view of the positioning assembly of the present invention; Figure 6: A schematic diagram of the structure of the connection between the locking member and the furnace wire in the present invention; Figure 7 : A schematic structural diagram of the connection between the positioning block and the positioning pin rod in the present invention.

[0021] The reference numerals are as follows: 10. Main assembly; 11. Furnace shell; 12. Crystal boat; 13. Inner high thermal conductivity layer; 14. Outer low thermal conductivity insulation layer; 20. Positioning assembly; 21. Heat sink; 211. Heat pipe; 212. Heat dissipation medium channel; 213. Connecting pipe; 22. Fixing member; 221. Fixed pressure plate; 222. Connecting plate; 23. Locking member; 231. Positioning block; 232. Limit baffle; 233. Connecting screw; 234. Connecting nut; 235. Positioning pin; 24. Furnace wire. DETAILED DESCRIPTION

[0022] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0023] Example Reference Figures 1 to 7 FIG. 1 is a first embodiment of the present invention, which provides a semiconductor heat treatment equipment insulation structure capable of rapid cooling and high uniformity, comprising a main assembly 10 and a positioning assembly 20. The main assembly 10 comprises a furnace shell 11 and a wafer boat 12 disposed within the furnace shell 11. An inner high thermal conductivity layer 13 is disposed on the outer side of the wafer boat 12, and an outer low thermal conductivity insulation layer 14 is disposed on the outer side of the inner high thermal conductivity layer 13. The wafer boat 12 is disposed within the positioning assembly 20, with a preset gap between the wafer boat 12 and the positioning assembly 20. The outer low-thermal-conductivity insulation layer 14 is made of a low-thermal-conductivity material such as graphite felt to provide insulation and control heat loss from the heating chamber and inner layer. Heat-resistant metal wire is used to tie the outer low-thermal-conductivity insulation layer 14 to the inner high-thermal-conductivity layer 13. The metal wire is flexible and has a certain degree of elasticity, which can prevent the insulation layer from cracking or detaching due to thermal expansion differences. Compared with bolts, clamps and other fixing methods, this method is more suitable for complex geometric structures and has less damage to the integrity of the insulation layer, which is conducive to improving thermal insulation performance. Compared with adhesives and other methods, it avoids the risk of high-temperature aging failure and chamber contamination. The inner high thermal conductivity layer 13 is made of high thermal conductivity and low electrical conductivity materials such as boron nitride ceramics, which evenly distributes the heat of the furnace wire 24 during heating and quickly conducts the heat to the heat sink 21 and out of the furnace body during cooling. At the same time, compared with existing materials such as aluminum silicate wool that are loose in texture and have low thermal conductivity, it is not easy to pulverize and crack due to local overheating for a long time.

[0024] The positioning assembly 20 includes a heat sink 21 and a fixing member 22 installed on the outside of the heat sink 21, a locking member 23 is connected to the fixing member 22, and a furnace wire 24 is arranged on the inner side of the locking member 23, wherein the heat sink 21 is evenly spaced and distributed on the inner high thermal conductivity layer 13, and the fixing member 22 is evenly angled and distributed on the outside of the heat sink 21, and the fixing member 22 and the locking member 23 are arranged one-to-one.

[0025] The heat sink 21 includes a heat pipe 211 and a heat dissipation medium channel 212 provided inside the heat pipe 211. The outer side of the heat pipe 211 is connected to a connecting pipe 213. One side of the heat pipe 211 is attached to the outer side of the inner high thermal conductivity layer 13, and the other side of the heat pipe 211 is connected to the connecting pipe 213. The heat dissipation medium is driven by a liquid or gas circulation device corresponding to the actual situation, flows through the heat dissipation medium channel 212 and the connecting pipe 213, and brings out the heat accumulated in the furnace body. The heat dissipation pipe 211 can be made of high thermal conductivity materials such as copper, and surrounds the outside of the inner high thermal conductivity layer 13. According to actual usage needs, the heat dissipation component 21 can be divided into zones to achieve precise control of the temperature of each area of the heating chamber.

[0026] The fixing part 22 includes a fixed pressure plate 221 and connecting plates 222 connected to both ends of the fixed pressure plate 221. The cross-sectional shape of the fixed pressure plate 221 is a "U" shape, and the heat sink 21 is arranged on the inner side of the "U" shape of the fixed pressure plate 221, so that the fixed pressure plate 221 can position and fix the heat sink 21 to facilitate fixing the heat sink 21 on the inner high thermal conductivity layer 13.

[0027] Preferably, the fixed pressing plate 221 and the connecting plate 222 can also be made by integral molding.

[0028] The locking member 23 includes a positioning block 231 and a limiting baffle 232 connected to the positioning block 231. A positioning pin 235 is connected to one side of the positioning block 231. A connecting screw 233 is fixedly connected to the positioning block 231, and a connecting nut 234 is connected to the other end of the connecting screw 233. Preferably, the positioning block 231 and the limiting baffle can also be made by integral molding.

[0029] The positioning pin 235 is fixedly connected to the inner high thermal conductivity layer 13, and the positioning pin 235 is set corresponding to the positioning block 231. A plug hole is opened on the positioning block 231, so that the positioning pin 235 is clamped in the plug hole on the positioning block 231, and then the positioning pin 235 is used to limit the position of the positioning block 231 to ensure that the installation position of the heat sink 21 and the furnace wire 24 will not shake.

[0030] Among them, the locking parts 23 are symmetrically arranged on both sides of the furnace wire 24. The upper and lower locking parts 23 are arranged, and the position of the furnace wire 24 is positioned and fixed by the limit baffle 232 to prevent the position of the furnace wire 24 from being offset. The connecting screw 233 passes through the inner high thermal conductivity layer 13 and is fixedly connected to the connecting plate 222. The threaded connection between the connecting screw 233 and the connecting nut 234 can be used to fix the positions of the fixing part 22 and the locking part 23 at the same time, thereby completing the position fixation of the heat sink 21 and the furnace wire 24.

[0031] The preferred embodiments of the present invention disclosed above are intended only to help illustrate the present invention. These preferred embodiments do not exhaustively describe all details, nor do they limit the present invention to specific embodiments. Obviously, many modifications and variations are possible based on the contents of this specification. These embodiments are selected and described in detail in this specification to better explain the principles and practical applications of the present invention, thereby enabling those skilled in the art to better understand and utilize the present invention. The present invention is limited only by the claims and their full scope and equivalents.

Claims

1. A thermal insulation structure for semiconductor heat treatment equipment capable of rapid cooling and high uniformity, characterized by: The invention comprises a main body component (10) and a positioning component (20), wherein the main body component (10) comprises a furnace shell (11) and a crystal boat (12) arranged inside the furnace shell (11), an inner high thermal conductivity layer (13) being arranged on the outer side of the crystal boat (12), and an outer low thermal conductivity insulation layer (14) being arranged on the outer side of the inner high thermal conductivity layer (13); The positioning assembly (20) comprises a heat sink (21) and a fixing member (22) mounted on the outside of the heat sink (21); a locking member (23) is connected to the fixing member (22), and a furnace wire (24) is provided on the inner side of the locking member (23).

2. The thermal insulation structure for semiconductor heat treatment equipment capable of rapid cooling and high uniformity according to claim 1, characterized in that: The crystal boat (12) is arranged inside the positioning assembly (20), and a preset gap exists between the crystal boat and the positioning assembly (20).

3. The thermal insulation structure for semiconductor heat treatment equipment capable of rapid cooling and high uniformity according to claim 2, characterized in that: The heat sink (21) comprises a heat dissipation pipe (211) and a heat dissipation medium channel (212) provided inside the heat dissipation pipe (211). The outer side of the heat dissipation pipe (211) is connected to a connecting pipe (213).

4. The thermal insulation structure for semiconductor heat treatment equipment capable of rapid cooling and high uniformity according to claim 3, characterized in that: The heat sinks (21) are evenly distributed at equal intervals outside the inner high thermal conductivity layer (13).

5. The thermal insulation structure for semiconductor heat treatment equipment capable of rapid cooling and high uniformity according to claim 4, characterized in that: One side of the heat dissipation pipe (211) is attached to the outside of the inner high-heat-conductivity layer (13), and the other side of the heat dissipation pipe (211) is connected to a connecting pipe (213).

6. The thermal insulation structure for semiconductor heat treatment equipment capable of rapid cooling and high uniformity according to claim 5, characterized in that: The fixing member (22) comprises a fixed pressing plate (221) and connecting plates (222) connected to both ends of the fixed pressing plate (221).

7. The thermal insulation structure for semiconductor heat treatment equipment capable of rapid cooling and high uniformity according to claim 6, characterized in that: The cross-section of the fixed pressing plate (221) is U-shaped, and the connecting plate (222) is provided with a through-hole structure for mating with the locking member (23).

8. The thermal insulation structure for semiconductor heat treatment equipment capable of rapid cooling and high uniformity according to claim 7, characterized in that: The locking member (23) comprises a positioning block (231) and a limiting baffle (232) connected to the positioning block (231), and a positioning pin (235) is connected to one side of the positioning block (231). A connecting screw (233) is fixedly connected to the positioning block (231), and a connecting nut (234) is connected to the other end of the connecting screw (233).

9. The thermal insulation structure for semiconductor heat treatment equipment capable of rapid cooling and high uniformity according to claim 8, characterized in that: The locking pieces (23) are symmetrically arranged on both sides of the furnace wire (24), and the connecting screw (233) passes through the inner high heat conductivity layer (13) and is fixedly connected to the fixing piece (22).

10. The thermal insulation structure for semiconductor heat treatment equipment capable of rapid cooling and high uniformity according to claim 9, characterized in that: The positioning pin rod (235) is fixedly connected to the inner high heat conductivity layer (13), and the positioning pin rod (235) is matched with the positioning block (231).

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