Semiconductor device

Abstract

The semiconductor device includes a second die pad, a first suspension lead, a second suspension lead, a first die pad, and a sealing resin. The first suspension lead and the second suspension lead are separated from a pair of first side surfaces of the sealing resin, respectively, and are exposed to the outside from a second side surface of the sealing resin. The first suspension lead has a first inner portion covered by the sealing resin and a first outer portion connected to the first inner portion. When viewed in a third direction, the first inner portion includes a first portion from a boundary with an extension line of a first edge of the first die pad to the first die pad. A cross-sectional area of the first portion with respect to a direction in which the first portion extends is larger than any cross-sectional area of the first outer portion with respect to a direction in which the first outer portion extends.

Description

Technical Field

[0001] The present disclosure relates to a semiconductor device. Background Art

[0002] The semiconductor device disclosed in Patent Document 1 includes two die pads, a control element (controller), and a drive element (gate driver) mounted on each of the two die pads. This semiconductor device drives switching elements such as IGBTs and MOSFETs. This semiconductor device is used in inverter circuits, etc.

[0003] In this semiconductor device, the power supply voltage supplied to the driver element is higher than the voltage applied to the switching element. Therefore, the power supply voltage supplied to the control element differs from the power supply voltage supplied to the driver element. Consequently, a difference occurs between the voltage applied to the control element and its conductive path and the voltage applied to the driver element and its conductive path. Consequently, in this semiconductor device, the control element and its conductive path are insulated from the driver element and its conductive path by interposing an insulating element in the transmission path of the electrical signal between the control element and the driver element. This prevents insulation breakdown in the control element and the driver element.

[0004] This semiconductor device includes: two suspension leads connected to the chip pads on which the control element and the insulating element are mounted; an intermediate lead electrically connected to the control element; and a sealing resin covering the two chip pads, the control element, the drive element, and the insulating element. The two suspension leads are exposed to the outside from the same side as the side of the sealing resin on which the plurality of intermediate leads are exposed to the outside. During the manufacture of this semiconductor device, a load from a bonding tool or the like acts on the chip pad connected to the two suspension leads. As a result, bending acts on each of the two suspension leads, and deflection occurs in the same direction as the load. When the deflection generated by each of the two suspension leads is greater, the inclination of the chip pad connected to the two suspension leads becomes greater. As a result, there is a possibility that the bonding strength of the control element and the insulating element relative to the chip pad will be reduced, or that the bonding of the wires electrically connected to these elements will be poor.

[0005] Prior art literature

[0006] Patent Literature

[0007] Patent Document 1: Japanese Patent Application Laid-Open No. 2016-207714 Summary of the Invention

[0008] Problems to be solved by the invention

[0009] One object of the present disclosure is to provide a semiconductor device that is improved compared to conventional semiconductor devices. In particular, in view of the above-mentioned circumstances, one object of the present disclosure is to provide a semiconductor device that can stabilize the posture of a die pad during manufacturing.

[0010] Solutions to Problems

[0011] A semiconductor device provided by a first aspect of the present disclosure includes: a first die pad; a first suspension lead connected to one side of the first die pad in a first direction; a second suspension lead located on the opposite side of the first suspension lead relative to the first die pad and connected to the first die pad; a first semiconductor element mounted on the first die pad; and a sealing resin covering the first die pad and the first semiconductor element. The sealing resin has two first side surfaces facing opposite sides in the first direction and a second side surface facing a second direction perpendicular to the first direction. The first and second suspension leads are separated from the two first side surfaces and exposed to the outside from the second side surfaces. The first suspension lead has a first inner portion covered by the sealing resin and a first outer portion connected to the first inner portion and exposed to the outside. The first die pad has a first edge extending along the first direction and located closest to the second side surface. When viewed in a third direction perpendicular to the first and second directions, the first inner portion includes a first portion extending from a boundary with an extension of the first edge to the first die pad. A cross-sectional area of the first portion relative to the direction in which the first portion extends is larger than any cross-sectional area of the first outer portion relative to the direction in which the first portion extends.

[0012] Effects of the Invention

[0013] According to the above configuration, the posture of the die pad can be stabilized during manufacture of a semiconductor device.

[0014] Other features and advantages of the present disclosure will become more apparent from the following detailed description based on the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a top view of the semiconductor device according to the first embodiment of the present disclosure.

[0016] Figure 2 is with Figure 1 The corresponding top view is shown through the sealing resin.

[0017] Figure 3 yes Figure 1 A front view of the semiconductor device shown.

[0018] Figure 4 yes Figure 1 Left side view of the semiconductor device shown.

[0019] Figure 5 yes Figure 1 Right side view of the semiconductor device shown.

[0020] Figure 6 It is along Figure 2 A cross-sectional view taken along line VI-VI.

[0021] Figure 7 It is along Figure 2 A cross-sectional view taken along line VII-VII.

[0022] Figure 8 It is along Figure 2 A cross-sectional view taken along line VIII-VIII.

[0023] Figure 9 yes Figure 2 A partial enlarged view of .

[0024] Figure 10A It is along Figure 9 Cross-sectional view of the XA-XA line.

[0025] Figure 10B It is along Figure 9 Cross-sectional view of the XB-XB line.

[0026] Figure 10C It is along Figure 9 A cross-sectional view of the XC-XC line.

[0027] Figure 11A FIG. 4 is a cross-sectional view of the second inner portion of the second suspension lead relative to its extending direction.

[0028] Figure 11B FIG. 4 is a cross-sectional view of the second outer portion of the second suspending lead relative to its extending direction.

[0029] Figure 12A FIG. 4 is a cross-sectional view of the third inner portion of the third suspension lead relative to its extending direction.

[0030] Figure 12B FIG. 4 is a cross-sectional view of the third outer portion of the third suspending lead relative to its extending direction.

[0031] Figure 13 It is a top view of a semiconductor device according to a second embodiment of the present disclosure.

[0032] Figure 14 is with Figure 13 The corresponding top view is shown through the sealing resin.

[0033] Figure 15 yes Figure 13 A rear view of the semiconductor device is shown.

[0034] Figure 16 yes Figure 13 Left side view of the semiconductor device shown.

[0035] Figure 17 It is used for manufacturing Figure 13 A top view of a lead frame of a semiconductor device is shown.

[0036] Figure 18 yes Figure 14 A partial enlarged view of .

[0037] Figure 19A It is along Figure 18 Cross-sectional view of the XIXA-XIXA line.

[0038] Figure 19B It is along Figure 18 A cross-sectional view of the XIXB-XIXB line.

[0039] Figure 19C It is along Figure 18 Cross-sectional view of the XIXC-XIXC line.

[0040] Figure 20 It is a top view of a semiconductor device according to a third embodiment of the present disclosure.

[0041] Figure 21 is with Figure 20 The corresponding top view is shown through the sealing resin.

[0042] Figure 22 yes Figure 20 Left side view of the semiconductor device shown.

[0043] Figure 23 yes Figure 20 Right side view of the semiconductor device shown.

[0044] Figure 24 yes Figure 21 A partial enlarged view of .

[0045] Figure 25A It is along Figure 24 Cross-sectional view of the XXVA-XXVA line.

[0046] Figure 25B It is along Figure 24 Cross-sectional view of the XXVB-XXVB line.

[0047] Figure 25C It is along Figure 24 Cross-sectional view of the XXVC-XXVC line. DETAILED DESCRIPTION

[0048] Modes for implementing the present disclosure will be described based on the drawings.

[0049] First embodiment:

[0050] based on Figures 1 to 12B , a semiconductor device A10 of the first embodiment of the present disclosure is described. The semiconductor device A10 includes a first semiconductor element 11, a second semiconductor element 12, an insulating element 13, a first chip pad 21, a second chip pad 22, a first suspension lead 23, a second suspension lead 24, a third suspension lead 25, a fourth suspension lead 26, a plurality of first intermediate leads 31, a plurality of second intermediate leads 32 and a sealing resin 50. The semiconductor device A10 also includes two side leads 27, a plurality of first wires 41, a plurality of second wires 42, a plurality of third wires 43 and a plurality of fourth wires 44. The semiconductor device A10 is surface-mounted on a wiring substrate of an inverter device such as an electric vehicle or a hybrid vehicle. The packaging form of the semiconductor device A10 is SOP (Small Outline Package). However, the packaging form of the semiconductor device A10 is not limited to SOP. For ease of understanding, Figure 2 Through the sealing resin 50. Figure 2 In FIG. 1 , the outer shape of the sealing resin 50 is indicated by an imaginary line (two-dot chain line).

[0051] In the description of the semiconductor device A10, for convenience, a direction perpendicular to the normal direction of the first mounting surface 21A of the first die pad 21, described later, is referred to as the "first direction x." A direction perpendicular to the first direction x is referred to as the "second direction y." A direction perpendicular to both the first direction x and the second direction y is referred to as the "third direction z." The third direction z corresponds to the normal direction to the first mounting surface 21A of the first die pad 21.

[0052] In semiconductor device A10, the first semiconductor element 11, the second semiconductor element 12, and the insulating element 13 are each formed of separate elements. The second semiconductor element 12 is located on the opposite side of the first semiconductor element 11 relative to the insulating element 13 in the second direction y. The insulating element 13 is located adjacent to the first semiconductor element 11 in the first direction x. When viewed in the third direction z, the first semiconductor element 11, the second semiconductor element 12, and the insulating element 13 each have a rectangular shape with the long side in the first direction x being the long side.

[0053] The first semiconductor element 11 controls the second semiconductor element 12. The first semiconductor element 11 includes a circuit for converting an electrical signal input from another semiconductor device into a PWM control signal, a transmitting circuit for transmitting the PWM control signal to the second semiconductor element 12, and a receiving circuit for receiving the electrical signal from the second semiconductor element 12.

[0054] The second semiconductor element 12 drives a switching element located outside the semiconductor device A10. The switching element is, for example, an IGBT (Insulated Gate Bipolar Transistor) or a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). The second semiconductor element 12 includes a receiving circuit for receiving a PWM control signal; a circuit for driving the switching element based on the PWM control signal; and a transmitting circuit for transmitting an electrical signal to the first semiconductor element 11. This electrical signal can be, for example, the output signal from a temperature sensor located near the motor.

[0055] The insulating element 13 transmits electrical signals such as PWM (Pulse Width Modulation) control signals in an insulating state. The insulating element 13 is of an inductive coupling type. As an example of an inductive coupling type insulating element 13, an insulating transformer can be cited. The insulating transformer transmits electrical signals based on an insulating state by inductively coupling two inductors (coils). The two inductors include a sending-side inductor and a receiving-side inductor. The two inductors are stacked in a third direction z. A dielectric layer composed of silicon dioxide (SiO2) or the like is located between the sending-side inductor and the receiving-side inductor. The sending-side inductor and the receiving-side inductor are electrically insulated by the dielectric layer. In addition, the insulating element 13 can also be of a capacitive type. As an example of a capacitive type insulating element 13, a capacitor can be cited.

[0056] The voltages applied to the first semiconductor element 11 and the second semiconductor element 12 are different from each other. Therefore, a potential difference is generated between the first semiconductor element 11 and the second semiconductor element 12. In semiconductor device A10, the voltage applied to the second semiconductor element 12 is higher than the voltage applied to the first semiconductor element 11. Furthermore, in semiconductor device A10, the power supply voltage supplied to the second semiconductor element 12 is higher than the power supply voltage supplied to the first semiconductor element 11.

[0057] Therefore, in semiconductor device A10, a first circuit including a first semiconductor element 11 and a second circuit including a second semiconductor element 12 are insulated from each other by an insulating element 13. The insulating element 13 is electrically conductive to the first and second circuits. The first circuit includes, in addition to the first semiconductor element 11, a first suspension lead 23, a second suspension lead 24, and a plurality of first intermediate leads 31. The second circuit includes, in addition to the second die pad 22, a third suspension lead 25, a fourth suspension lead 26, and a plurality of second intermediate leads 32. The first and second circuits have relatively different potentials. In semiconductor device A10, the potential of the first circuit is higher than that of the second circuit. Furthermore, the insulating element 13 relays signals between the first and second circuits. For example, in the inverter device of an electric vehicle or hybrid vehicle, the voltage applied to the ground (GND) of the first semiconductor element 11 is approximately 0V, while the voltage applied to the ground of the second semiconductor element 12 sometimes transiently rises to 600V or above.

[0058] like Figure 2 as well as Figure 6 As shown, the first semiconductor element 11 has a plurality of first electrodes 111. The plurality of first electrodes 111 are provided on the upper surface of the first semiconductor element 11 (the surface facing the same side as the first mounting surface 21A of the first die pad 21, described later). The plurality of first electrodes 111 are made of, for example, aluminum (Al). The plurality of first electrodes 111 are electrically connected to the circuit formed in the first semiconductor element 11.

[0059] like Figure 2 as well as Figure 6 As shown, the second semiconductor element 12 has a plurality of second electrodes 121. The plurality of second electrodes 121 are provided on the upper surface of the second semiconductor element 12 (the surface facing the same side as the second mounting surface 22A of the second die pad 22, described later). The plurality of second electrodes 121 are made of, for example, aluminum. The plurality of second electrodes 121 are electrically connected to the circuit formed in the second semiconductor element 12.

[0060] like Figure 2 as well as Figure 6As shown, the insulating element 13 is located between the second semiconductor element 12 and the first semiconductor element 11 in the third direction z. Therefore, the first semiconductor element 11 is located on the opposite side of the second semiconductor element 12 relative to the insulating element 13 in the second direction y. A plurality of third electrodes 131 and a plurality of fourth electrodes 132 are provided on the upper surface of the insulating element 13 (the surface facing the same side as the first mounting surface 21A of the first die pad 21, described later). The plurality of third electrodes 131 and the plurality of fourth electrodes 132 are electrically connected to either the transmitting-side inductor or the receiving-side inductor, respectively. The plurality of third electrodes 131 are arranged along the first direction x and are located between the first semiconductor element 11 and the second semiconductor element 12 in the second direction y. The plurality of fourth electrodes 132 are arranged along the first direction x and are located on the opposite side of the first semiconductor element 11 relative to the plurality of third electrodes 131 in the second direction y. The plurality of third electrodes 131 and the plurality of fourth electrodes 132 are made of, for example, aluminum.

[0061] like Figure 1 As shown, the sealing resin 50 covers the first semiconductor element 11, the second semiconductor element 12, the insulating element 13, the first die pad 21, and the second die pad 22. Figure 6 As shown, the sealing resin 50 also covers the plurality of first conductive wires 41, the plurality of second conductive wires 42, the plurality of third conductive wires 43, and the plurality of fourth conductive wires 44. The sealing resin 50 is an insulator. The sealing resin 50 is made of a material including, for example, epoxy resin. When viewed in the third direction z, the sealing resin 50 has a rectangular shape.

[0062] like Figures 3 to 5 As shown, the sealing resin 50 has a top surface 51 , a bottom surface 52 , two first side surfaces 53 , a second side surface 54 , and a third side surface 55 .

[0063] like Figures 3 to 5 As shown, the top surface 51 and the bottom surface 52 face opposite sides in the third direction z. The top surface 51 and the bottom surface 52 are flat (or substantially flat).

[0064] like Figures 3 to 5As shown, the two first side surfaces 53 are connected to the top surface 51 and the bottom surface 52 and face opposite sides in the first direction x. The two first side surfaces 53 respectively include a first upper portion 531, a first lower portion 532, and a first intermediate portion 533. One side of the first upper portion 531 in the third direction z is connected to the top surface 51, and the other side in the third direction z is connected to the first intermediate portion 533. The first upper portion 531 is inclined relative to the top surface 51. One side of the first lower portion 532 in the third direction z is connected to the bottom surface 52, and the other side in the third direction z is connected to the first intermediate portion 533. The first lower portion 532 is inclined relative to the bottom surface 52. The first intermediate portion 533 is located between the first upper portion 531 and the first lower portion 532 in the third direction z. The in-plane direction of the first intermediate portion 533 includes the third direction z. When viewed in the third direction z, the first intermediate portion 533 is located outboard of the top surface 51 and the bottom surface 52.

[0065] like Figure 3 as well as Figure 4 As shown, the second side surface 54 is connected to the top surface 51 and the bottom surface 52 and faces one side in the second direction y. The second side surface 54 is located closer to the first die pad 21 than the third side surface 55. The second side surface 54 includes a second upper portion 541, a second lower portion 542, and a second intermediate portion 543. One side of the second upper portion 541 in the third direction z is connected to the top surface 51, and the other side in the third direction z is connected to the second intermediate portion 543. The second upper portion 541 is inclined relative to the top surface 51. One side of the second lower portion 542 in the third direction z is connected to the bottom surface 52, and the other side in the third direction z is connected to the second intermediate portion 543. The second lower portion 542 is inclined relative to the bottom surface 52. The second intermediate portion 543 is located between the second upper portion 541 and the second lower portion 542 in the third direction z. The in-plane direction of the second intermediate portion 543 includes the third direction z. When viewed in the third direction z, the second intermediate portion 543 is located further outboard of the top surface 51 and the bottom surface 52.

[0066] like Figure 3 as well as Figure 5As shown, the third side surface 55 is connected to the top surface 51 and the bottom surface 52 and faces the side opposite to the second side surface 54 in the second direction y. The third side surface 55 is located closer to the second die pad 22 than the second side surface 54. The third side surface 55 includes a third upper portion 551, a third lower portion 552, and a third intermediate portion 553. One side of the third upper portion 551 in the third direction z is connected to the top surface 51, and the other side in the third direction z is connected to the third intermediate portion 553. The third upper portion 551 is inclined relative to the top surface 51. One side of the third lower portion 552 in the third direction z is connected to the bottom surface 52, and the other side in the third direction z is connected to the third intermediate portion 553. The third lower portion 552 is inclined relative to the bottom surface 52. The third intermediate portion 553 is located between the third upper portion 551 and the third lower portion 552 in the third direction z. The in-plane direction of the third intermediate portion 553 includes the third direction z. When viewed in the third direction z, the third intermediate portion 553 is located outboard of the top surface 51 and the bottom surface 52.

[0067] The first die pad 21 , the second die pad 22 , the first suspending lead 23 , the second suspending lead 24 , the third suspending lead 25 , the fourth suspending lead 26 , the two side leads 27 , the plurality of first intermediate leads 31 , and the plurality of second intermediate leads 32 all include copper (Cu).

[0068] like Figure 1 as well as Figure 2 As shown, the first die pad 21 and the second die pad 22 are separated from each other in the second direction y. In the semiconductor device A10, the first semiconductor element 11 and the insulating element 13 are mounted on the first die pad 21, and the second semiconductor element 12 is mounted on the second die pad 22. In this case, when viewed in the third direction z, the area of the first die pad 21 is larger than the area of the second die pad 22. Alternatively, the first semiconductor element 11 may be mounted on the first die pad 21, and the second semiconductor element 12 and the insulating element 13 may be mounted on the second die pad 22.

[0069] like Figure 6 as well as Figure 7 As shown, the first die pad 21 has a first mounting surface 21A facing one side in the third direction z. The first semiconductor element 11 and the insulating element 13 are respectively bonded to the first mounting surface 21A via a bonding layer 29. The bonding layer 29 is composed of a paste containing metal particles. The metal particles are, for example, silver (Ag). Therefore, the bonding layer 29 is a conductor. Alternatively, the bonding layer 29 may be solder. The first die pad 21 is covered with a sealing resin 50.

[0070] like Figure 2 、 Figure 6 as well as Figure 7As shown, the first die pad 21 is provided with two first holes 211, a plurality of second holes 212, and two third holes 213. The two first holes 211, the plurality of second holes 212, and the two third holes 213 extend through the first die pad 21 in the third direction z. The two first holes 211 are located on either side of the first semiconductor element 11 in the first direction x. The two first holes 211 extend in the second direction y. The plurality of second holes 212 are located between the first semiconductor element 11 and the insulating element 13 in the second direction y. The plurality of second holes 212 extend along the first direction x. The plurality of second holes 212 are arranged along the first direction x. The two third holes 213 are located on either side of the insulating element 13 in the first direction x. The two third holes 213 extend in the second direction y.

[0071] like Figure 1 as well as Figure 2 As shown, the first suspension lead 23 is connected to one side of the first chip pad 21 in the first direction x. The first suspension lead 23 is separated from the two first side surfaces 53 of the sealing resin 50. The first suspension lead 23 is exposed to the outside from the second side surface 54 of the sealing resin 50. The first suspension lead 23 has a first inner portion 231 and a first outer portion 232. The first inner portion 231 is connected to the first chip pad 21 and is covered by the sealing resin 50. The first outer portion 232 is connected to the first inner portion 231 and is exposed to the outside. When viewed in the third direction z, the first outer portion 232 extends in the second direction y. The first outer portion 232 is curved in a gull-wing shape when viewed along the first direction x. Tin plating, for example, is applied to the surface of the first outer portion 232.

[0072] like Figure 9 As shown, the first die pad 21 has a first edge 21B extending along the first direction x and located closest to the second side surface 54 of the sealing resin 50. When viewed in the third direction z, the first inner portion 231 includes a first portion 231A extending from the boundary of the extension line EL of the first edge 21B to the first die pad 21. The first portion 231A is separated from the second side surface 54. Figure 9 In FIG, the portion corresponding to the first portion 231A is indicated by shading. Figure 10A as well as Figure 10C As shown, the cross-sectional area of the first portion 231A relative to its own extension direction is larger than any cross-sectional area of the first outer portion 232 relative to its own extension direction. The "cross-sectional area relative to the extension direction" refers to the area of a cross section perpendicular to the extension direction.

[0073] like Figure 9 As shown, the first inner portion 231 includes a second portion 231B connecting the first portion 231A and the first outer portion 232. Figure 9 In FIG, the portion corresponding to the second portion 231B is indicated by shading. Figure 10Bas well as Figure 10C As shown, the cross-sectional area of the second portion 231B relative to the direction in which it extends is larger than any cross-sectional area of the first outer portion 232 relative to the direction in which it extends.

[0074] like Figure 1 as well as Figure 2 As shown, the second suspension lead 24 is located on the side opposite to the first suspension lead 23 with the first chip pad 21 as a reference, and is connected to the first chip pad 21. The second suspension lead 24 is separated from the two first side surfaces 53 of the sealing resin 50. The second suspension lead 24 is exposed to the outside from the second side surface 54 of the sealing resin 50. The second suspension lead 24 has a second inner portion 241 and a second outer portion 242. The second inner portion 241 is connected to the first chip pad 21 and is covered by the sealing resin 50. The second outer portion 242 is connected to the second inner portion 241 and is exposed to the outside. When viewed along the third direction z, the second outer portion 242 extends along the second direction y. As shown Figure 3 As shown, the second outer portion 242 is curved in a gull-wing shape when viewed along the first direction x. The surface of the second outer portion 242 is plated with tin, for example. Figure 11A as well as Figure 11B As shown, similarly to the first suspending lead 23 , the cross-sectional area of the second inner portion 241 relative to the direction in which it extends is larger than any cross-sectional area of the second outer portion 242 relative to the direction in which it extends.

[0075] like Figure 7 As shown, when viewed in the first direction x, the first inner portion 231 of the first suspension lead 23 and the second inner portion 241 of the second suspension lead 24 overlap with the first chip pad 21. Figure 2 As shown, when viewed in the third direction z, the first inner portion 231 , the second inner portion 241 , and the plurality of second holes 212 of the first die pad 21 respectively overlap with an imaginary line VL extending along the first direction x.

[0076] like Figure 6 as well as Figure 8 As shown, the second die pad 22 has a second mounting surface 22A facing the same side as the first mounting surface 21A of the first die pad 21 in the third direction z. The second semiconductor element 12 is bonded to the second mounting surface 22A via the bonding layer 29. The second die pad 22 is covered with a sealing resin 50.

[0077] like Figure 1 as well as Figure 2As shown, the third suspension lead 25 is located on the side where the first suspension lead 23 is located with the first chip pad 21 as a reference, and is connected to the second chip pad 22. The third suspension lead 25 is separated from the two first side surfaces 53 of the sealing resin 50. The third suspension lead 25 is exposed to the outside from the third side surface 55 of the sealing resin 50. The third suspension lead 25 has a third inner portion 251 and a third outer portion 252. The third inner portion 251 is connected to the second chip pad 22 and is covered by the sealing resin 50. The third outer portion 252 is connected to the third inner portion 251 and is exposed to the outside. When viewed in the third direction z, the third outer portion 252 extends in the second direction y. The third outer portion 252 is bent in a gull-wing shape when viewed in the first direction x. Tin plating, for example, is implemented on the surface of the third outer portion 252. As shown in FIG. Figure 12A as well as Figure 12B As shown, similarly to the first suspending lead 23 , the cross-sectional area of the third inner portion 251 relative to the direction in which it extends is larger than any cross-sectional area of the third outer portion 252 relative to the direction in which it extends.

[0078] like Figure 1 as well as Figure 2 As shown, the fourth suspension lead 26 is located on the side opposite to the third suspension lead 25 relative to the second die pad 22 and is connected to the second die pad 22. The fourth suspension lead 26 is separated from both first side surfaces 53 of the encapsulation resin 50. The fourth suspension lead 26 is exposed to the outside from the third side surface 55 of the encapsulation resin 50. The fourth suspension lead 26 has a fourth inner portion 261 and a fourth outer portion 262. The fourth inner portion 261 is connected to the second die pad 22 and covered by the encapsulation resin 50. The fourth outer portion 262 is connected to the fourth inner portion 261 and is exposed to the outside. When viewed in the third direction z, the fourth outer portion 262 extends in the second direction y. When viewed in the first direction x, the fourth outer portion 262 is curved in a gull-wing shape. The surface of the fourth outer portion 262 is, for example, tin-plated. Similar to the first suspension lead 23, the cross-sectional area of the fourth inner portion 261 relative to the direction in which it extends is greater than any cross-sectional area of the fourth outer portion 262 relative to the direction in which it extends.

[0079] like Figure 1 as well as Figure 2 As shown, the two side leads 27 sandwich the third suspending lead 25 and the fourth suspending lead 26 in the first direction x. The two side leads 27 are separated from the second die pad 22 and the two first side surfaces 53 of the sealing resin 50. The two side leads 27 are exposed to the outside from the third side surfaces 55 of the sealing resin 50. The two side leads 27 are electrically connected to the second semiconductor element 12 via any one of the plurality of fourth conductive wires 44.

[0080] like Figure 2As shown, the two side leads 27 each have an inner portion 271 and an outer portion 272. The inner portion 271 is covered by the sealing resin 50. The outer portion 272 is connected to the inner portion 271 and is exposed to the outside. When viewed along the third direction z, the outer portion 272 extends along the second direction y. Figure 3 As shown, the outer portion 272 is curved into a gull-wing shape when viewed in the first direction x. Tin plating, for example, is performed on the surface of the outer portion 272 .

[0081] like Figure 8 As shown, when viewed in the first direction x, the third inner portion 251 of the third suspending lead 25 , the fourth inner portion 261 of the fourth suspending lead 26 , and the inner portions 271 of the two side leads 27 overlap with the second die pad 22 .

[0082] like Figure 1 as well as Figure 2 As shown, the plurality of first intermediate leads 31 are located between the first suspension lead 23 and the second suspension lead 24 in the first direction x. The plurality of first intermediate leads 31 are located on the opposite side of the second die pad 22 relative to the first die pad 21 in the second direction y. The plurality of first intermediate leads 31 are arranged along the first direction x. At least one of the plurality of first intermediate leads 31 is electrically connected to the first semiconductor element 11 via any of the plurality of second conductive wires 42.

[0083] like Figure 2 as well as Figure 6 As shown, the plurality of first intermediate leads 31 each have an inner portion 311 and an outer portion 312. The inner portion 311 is covered by the sealing resin 50. The outer portion 312 is connected to the inner portion 311 and is exposed to the outside from the second side surface 54 of the sealing resin 50. When viewed along the third direction z, the outer portion 312 extends along the second direction y. When viewed from the first direction x, the outer portion 312 is bent into a gull-wing shape. The shape of the outer portion 312 is similar to Figure 3 The second outer portion 242 of the second suspension lead 24 shown has the same shape. The surface of the outer portion 312 is plated with tin, for example.

[0084] like Figure 1 as well as Figure 2 As shown, the plurality of second intermediate leads 32 are located between the third suspension lead 25 and the fourth suspension lead 26 in the first direction x. The plurality of second intermediate leads 32 are located on the opposite side of the first die pad 21 relative to the second die pad 22 in the second direction y. The plurality of second intermediate leads 32 are arranged along the first direction x. At least one of the plurality of second intermediate leads 32 is electrically connected to the second semiconductor element 12 via any one of the plurality of fourth conductive lines 44.

[0085] like Figure 2 as well as Figure 6As shown, the plurality of second intermediate leads 32 each have an inner portion 321 and an outer portion 322. The inner portion 321 is covered by the sealing resin 50. The outer portion 322 is connected to the inner portion 321 and is exposed to the outside from the third side surface 55 of the sealing resin 50. When viewed along the third direction z, the outer portion 322 extends along the second direction y. When viewed from the first direction x, the outer portion 322 is bent into a gull-wing shape. The shape of the outer portion 322 is similar to Figure 3 The shape of the outer portion 272 of each of the two side leads 27 shown is the same. The surface of the outer portion 322 is plated with tin, for example.

[0086] like Figure 2 as well as Figure 6 As shown, the plurality of first conductive wires 41 are electrically bonded to any one of the plurality of third electrodes 131 of the insulating element 13 and any one of the plurality of first electrodes 111 of the first semiconductor element 11. This creates electrical continuity between the first semiconductor element 11 and the insulating element 13. The plurality of first conductive wires 41 are arranged along the first direction x. Each of the plurality of first conductive wires 41 spans any one of the plurality of second holes 212 provided in the first die pad 21. The plurality of first conductive wires 41 are made of, for example, gold.

[0087] like Figure 2 as well as Figure 6 As shown, the plurality of second wires 42 are electrically bonded to each of the plurality of first electrodes 111 of the first semiconductor element 11 and the inner portion 311 of each of the plurality of first intermediate leads 31. This provides electrical continuity between at least one of the plurality of first intermediate leads 31 and the first semiconductor element 11. At least one of the plurality of second wires 42 is electrically bonded to each of the plurality of first electrodes 111 and the first inner portion 231 of the first suspension lead 23. This provides electrical continuity between the first suspension lead 23 and the first semiconductor element 11. Furthermore, at least one of the plurality of second wires 42 is electrically bonded to each of the plurality of first electrodes 111 and the second inner portion 241 of the second suspension lead 24. This provides electrical continuity between the second suspension lead 24 and the first semiconductor element 11. At least one of the first suspension lead 23 and the second suspension lead 24 serves as a ground for the first semiconductor element 11. The plurality of second wires 42 are made of, for example, gold. Alternatively, each of the plurality of second wires 42 may include a core material made of copper and a covering made of palladium that covers the core material.

[0088] like Figure 2 as well as Figure 6As shown, the plurality of third wires 43 are electrically bonded to any one of the plurality of fourth electrodes 132 of the insulating element 13 and any one of the plurality of second electrodes 121 of the second semiconductor element 12. This creates electrical continuity between the second semiconductor element 12 and the insulating element 13. The plurality of third wires 43 are arranged along the first direction x. The plurality of third wires 43 span between the first die pad 21 and the second die pad 22. The plurality of third wires 43 are comprised of, for example, gold.

[0089] like Figure 2 as well as Figure 6 As shown, the plurality of fourth wires 44 are electrically bonded to any one of the plurality of second electrodes 121 of the second semiconductor element 12 and to the inner portion 321 of any one of the plurality of second intermediate leads 32. This provides electrical continuity between at least one of the plurality of second intermediate leads 32 and the second semiconductor element 12. At least one of the plurality of fourth wires 44 is electrically bonded to any one of the plurality of second electrodes 121 and to the third inner portion 251 of the third suspension lead 25. This provides electrical continuity between the third suspension lead 25 and the second semiconductor element 12. At least one of the plurality of fourth wires 44 is electrically bonded to any one of the plurality of second electrodes 121 and to the fourth inner portion 261 of the fourth suspension lead 26. This provides electrical continuity between the fourth suspension lead 26 and the second semiconductor element 12. At least one of the third and fourth suspension leads 25 and 26 serves as a ground for the second semiconductor element 12. Furthermore, at least one of the plurality of fourth wires 44 is electrically bonded to any one of the plurality of second electrodes 121 and to the inner portion 271 of any one of the two side leads 27. Thus, at least one of the two side leads 27 is electrically connected to the second semiconductor element 12. The fourth wires 44 are made of, for example, gold. Alternatively, the fourth wires 44 may each include a core material made of copper and a coating material made of palladium covering the core material.

[0090] In the motor drive circuit in the inverter device, a half-bridge circuit is generally constructed including a low-side (low potential side) switching element and a high-side (high potential side) switching element. In the following description, the case where these switching elements are MOSFETs is taken as the object. In the low-side switching element, the source of the switching element and the reference potential of the gate driver that drives the switching element are both grounded. On the other hand, in the high-side switching element, the source of the switching element and the reference potential of the gate driver that drives the switching element are both equivalent to the potential at the output node of the half-bridge circuit. The potential at the output node changes according to the drive of the high-side switching element and the low-side switching element, so the reference potential of the gate driver that drives the high-side switching element changes. When the high-side switching element is turned on, the reference potential is equivalent to the voltage applied to the drain of the high-side switching element (for example, above 600V). In the semiconductor device A10, the grounding of the first semiconductor element 11 and the grounding of the second semiconductor element 12 are separate structures. Therefore, when the semiconductor device A10 is used as a gate driver for driving the high-side switching element, a voltage equivalent to the voltage applied to the drain of the high-side switching element is transiently applied to the ground of the second semiconductor element 12 .

[0091] Next, the effects of the semiconductor device A10 will be described.

[0092] The semiconductor device A10 includes a first die pad 21, a first suspension lead 23, a second suspension lead 24, a first semiconductor element 11, and an encapsulating resin 50. The first suspension lead 23 has a first inner portion 231 covered by the encapsulating resin 50 and a first outer portion 232 connected to the first inner portion 231 and exposed to the outside. When viewed in the third direction z, the first inner portion 231 includes a first portion 231A extending from the boundary with the extension line EL of the first edge 21B of the first die pad 21 to the first die pad 21. The cross-sectional area of the first portion 231A relative to its own extension direction is larger than any cross-sectional area of the first outer portion 232 relative to its own extension direction. This structure increases the bending stiffness of the cross section of the first inner portion 231 perpendicular to its own extension direction compared to the bending stiffness of the cross section of the first outer portion 232 perpendicular to its own extension direction. Consequently, when a load in the third direction z acts on the first die pad 21 from a bonding tool or the like, deflection of the first suspension lead 23 in the third direction z is reduced compared to conventional methods. Therefore, according to this configuration, in the semiconductor device A10 , it is possible to stabilize the posture of the die pad during the manufacture of the semiconductor device A10 .

[0093] The first inner portion 231 of the first suspension lead 23 includes a second portion 231B connecting the first portion 231A and the first outer portion 232. The cross-sectional area of the second portion 231B relative to its extension direction is greater than any cross-sectional area of the first outer portion 232 relative to its extension direction. This structure increases the bending stiffness of the cross section of the first inner portion 231 perpendicular to its extension direction compared to the bending stiffness of the cross section of the first outer portion 232 perpendicular to its extension direction. This further reduces deflection of the first suspension lead 23 in the third direction z when a load in the third direction z acts on the first die pad 21.

[0094] The second suspension lead 24 has a second inner portion 241 covered by the sealing resin 50 and a second outer portion 242 connected to the second inner portion 241 and exposed to the outside. The cross-sectional area of the second inner portion 241 relative to the direction in which it extends is greater than any cross-sectional area of the second outer portion 242 relative to the direction in which it extends. By adopting this structure, the bending rigidity of the cross section of the second inner portion 241 perpendicular to the direction in which it extends is greater than the bending rigidity of the cross section of the second outer portion 242 perpendicular to the direction in which it extends. As a result, when a load in the third direction z acts on the first die pad 21, the deflection of the second suspension lead 24 in the third direction z is reduced compared to conventional methods. As a result, the posture of the first die pad 21 can be further stabilized.

[0095] The semiconductor device A10 further includes an insulating element 13 mounted on a first die pad 21. The first die pad 21 is provided with two first holes 211 and a second hole 212, each extending through the first die pad 21 in the third direction z. The two first holes 211 are located on either side of the first semiconductor element 11 in the first direction x. The second hole 212 is located between the first semiconductor element 11 and the insulating element 13 in the second direction y. By adopting this structure, when the sealing resin 50 is formed during the manufacture of the semiconductor device A10, the fluidized sealing resin 50 passes through the two first holes 211 and the second hole 212, thereby preventing poor filling of the sealing resin 50. Consequently, the formation of voids in the sealing resin 50 can be suppressed.

[0096] When viewed in the third direction z, the first inner portion 231 of the first suspension lead 23, the second inner portion 241 of the second suspension lead 24, and the second hole 212 of the first die pad 21 each overlap with an imaginary line VL extending along the first direction x. This structure prevents rotation of the first die pad 21 about the first direction x, which could occur due to contact between the fluidized sealing resin 50 and the first die pad 21, during the formation of the sealing resin 50 during the manufacture of the semiconductor device A10. This ensures a more uniform coverage thickness of the sealing resin 50 on the first die pad 21. In this case, by adopting a shape in which the second hole 212 extends along the first direction x, rotation of the first die pad 21 about the first direction x can be more effectively prevented.

[0097] When viewed in the first direction x, the first inner portion 231 of the first suspension lead 23 and the second inner portion 241 of the second suspension lead 24 overlap with the first die pad 21. This structure can suppress expansion of the dimension of the semiconductor device A10 in the third direction z.

[0098] Second embodiment:

[0099] based on Figures 13 to 19C , a semiconductor device A20 according to a second embodiment of the present disclosure is described. In these figures, the same reference numerals are used for the same or similar elements as those of the semiconductor device A10 described above, and repeated descriptions are omitted. For ease of understanding, Figure 14 Through the sealing resin 50. Figure 14 In FIG. 1 , the outer shape of the sealing resin 50 is indicated by an imaginary line.

[0100] In the semiconductor device A20 , the structures of the first suspending leads 23 , the second suspending leads 24 , the third suspending leads 25 , and the fourth suspending leads 26 are different from those of the semiconductor device A10 .

[0101] like Figure 15 As shown, a cutting mark 232A is formed on the first outer portion 232 of the first suspension lead 23 in the first direction x. The cutting mark 232A is formed by Figure 17 The two connecting rods 82 shown are cut away to form traces on the first outer portion 232 .

[0102] like Figure 17As shown, during the manufacture of semiconductor device A20, the first suspension lead 23 is obtained from a lead frame 80 along with the first and second die pads 21 and 22. The lead frame 80 includes a frame portion 81 and two connecting bars 82. The frame portion 81 surrounds the first and second die pads 21 and 22. The first die pad 21, the second die pad 22, the first suspension lead 23, the second suspension lead 24, the third suspension lead 25, the fourth suspension lead 26, the two side leads 27, the plurality of first intermediate leads 31, and the plurality of second intermediate leads 32 are connected to the frame portion 81. The two connecting bars 82 are separated from each other in the second direction y. The two connecting bars 82 are connected to the frame portion 81 on either side of the first direction x. The first suspension lead 23, the second suspension lead 24, and the plurality of first intermediate leads 31 are each connected to one of the two connecting bars 82. The third suspending lead 25 , the fourth suspending lead 26 , the two side leads 27 , and the plurality of second intermediate leads 32 are connected to the other of the two connecting bars 82 .

[0103] In manufacturing the semiconductor device A20, after forming the sealing resin 50, the two tie bars 82 are cut. In the first suspending lead 23, the cutting marks 232A are formed in the first outer portion 232, and the first outer portion 232 is formed into a gull-wing shape.

[0104] like Figure 13 、 Figure 14 as well as Figure 16 As shown, the first outer portion 232 of the first suspension lead 23 includes a third portion 232B and a fourth portion 232C. Figure 18 As shown, the third portion 232B is located between the second side surface 54 of the sealing resin 50 and the cut mark 232A. The fourth portion 232C is located on the opposite side of the third portion 232B with respect to the cut mark 232A. Figure 18 In FIG. 2 , the portions corresponding to the third portion 232B and the fourth portion 232C are shaded. Figure 19B as well as Figure 19C As shown, the cross-sectional area of the third portion 232B relative to its own extension direction is greater than the cross-sectional area of the fourth portion 232C relative to its own extension direction.

[0105] like Figure 18 、 Figure 19A 、 Figure 19B as well as Figure 19CAs shown, in the semiconductor device A20, the cross-sectional area of the first portion 231A of the first inner portion 231 of the first suspending lead 23, relative to the direction in which the first portion 231A extends, is also larger than any cross-sectional area of the first outer portion 232 of the first suspending lead 23. The cross-sectional area of the third portion 232B of the first outer portion 232 of the first suspending lead 23, relative to the direction in which the first portion 231B extends, is equal to the cross-sectional area of the second portion 231B of the first inner portion 231.

[0106] like Figure 13 as well as Figure 14 As shown, in the semiconductor device A20, the second outer portion 242 of the second suspension lead 24, the third outer portion 252 of the third suspension lead 25, and the fourth outer portion 262 of the fourth suspension lead 26 respectively have the same structures as the cutting mark 232A, the third portion 232B, and the fourth portion 232C of the first outer portion 232 of the first suspension lead 23.

[0107] Next, the effects of the semiconductor device A20 will be described.

[0108] Semiconductor device A20 includes a first die pad 21, a first suspension lead 23, a second suspension lead 24, a first semiconductor element 11, and a sealing resin 50. The first suspension lead 23 includes a first inner portion 231 covered by the sealing resin 50 and a first outer portion 232 connected to the first inner portion 231 and exposed to the outside. When viewed in the third direction z, the first inner portion 231 includes a first portion 231A extending from the boundary with the extension line EL of the first edge 21B of the first die pad 21 to the first die pad 21. The cross-sectional area of the first portion 231A relative to its own extension direction is larger than any cross-sectional area of the first outer portion 232 relative to its own extension direction. Therefore, according to this structure, even in semiconductor device A20, the posture of the die pad can be stabilized during the manufacture of semiconductor device A20. Furthermore, semiconductor device A20 has a structure common to semiconductor device A10, thus achieving the same functions and effects as semiconductor device A10.

[0109] In semiconductor device A20, the first outer portion 232 of the first suspension lead 23 includes a third portion 232B and a fourth portion 232C. The third portion 232B is located between the second side surface 54 of the encapsulating resin 50 and the cut mark 232A. The fourth portion 232C is located on the opposite side of the third portion 232B relative to the cut mark 232A. The cross-sectional area of the third portion 232B relative to its extension direction is larger than the cross-sectional area of the fourth portion 232C relative to its extension direction. This structure increases the bending rigidity of the cross section of the first outer portion 232 perpendicular to its extension direction compared to that of semiconductor device A10. Consequently, when a load in the third direction z acts on the first die pad 21, deflection of the first suspension lead 23 in the third direction z is further reduced compared to that of semiconductor device A10, thereby further stabilizing the posture of the first die pad 21.

[0110] Third embodiment:

[0111] based on Figures 20 to 25C , a semiconductor device A30 according to a third embodiment of the present disclosure is described. In these figures, elements identical or similar to those of the semiconductor device A10 described above are denoted by the same reference numerals, and repeated descriptions are omitted. For ease of understanding, Figure 21 Through the sealing resin 50. Figure 21 In FIG. 1 , the outer shape of the sealing resin 50 is indicated by an imaginary line.

[0112] Unlike semiconductor device A10, semiconductor device A30 includes two support leads 28 instead of two side leads 27. Furthermore, semiconductor device A30 includes fewer first intermediate leads 31 and fewer second intermediate leads 32 than semiconductor device A10.

[0113] like Figure 20 as well as Figure 21 As shown, the two support leads 28 are separated from each other in the second direction y. The two support leads 28 extend in the second direction y. The two support leads 28 are connected to the first chip pad 21 and the second chip pad 22 respectively. Figure 22 as well as Figure 23 As shown, the two support leads 28 each have an end surface 28A facing the second direction y. The end surface 28A of the two support leads 28 connected to the first die pad 21 is exposed from the second side surface 54 of the sealing resin 50. The end surface 28A of the two support leads 28 connected to the second die pad 22 is exposed from the third side surface 55 of the sealing resin 50.

[0114] like Figure 24 、 Figure 25A as well as Figure 25CAs shown, in the semiconductor device A30, the cross-sectional area of the first portion 231A of the first inner portion 231 of the first suspension lead 23 relative to its own extending direction is also larger than any cross-sectional area of the first outer portion 232 relative to its own extending direction. Figure 24 、 Figure 25B as well as Figure 25C As shown, in the semiconductor device A30, the cross-sectional area of the second portion 231B of the first inner portion 231 of the first suspending lead 23 relative to its extending direction is also larger than any cross-sectional area of the first outer portion 232 relative to its extending direction.

[0115] Next, the effects of the semiconductor device A30 will be described.

[0116] Semiconductor device A30 includes a first die pad 21, a first suspension lead 23, a second suspension lead 24, a first semiconductor element 11, and a sealing resin 50. The first suspension lead 23 includes a first inner portion 231 covered by the sealing resin 50 and a first outer portion 232 connected to the first inner portion 231 and exposed to the outside. When viewed in the third direction z, the first inner portion 231 includes a first portion 231A extending from the boundary with the extension line EL of the first edge 21B of the first die pad 21 to the first die pad 21. The cross-sectional area of the first portion 231A relative to its own extension direction is larger than any cross-sectional area of the first outer portion 232 relative to its own extension direction. Therefore, according to this structure, even in semiconductor device A30, the posture of the die pad can be stabilized during the manufacture of semiconductor device A30. Furthermore, semiconductor device A30 has a structure common to semiconductor device A10, thus achieving the same functions and effects as semiconductor device A10.

[0117] Semiconductor device A30 further includes support leads 28. Support leads 28 are connected to the first die pad 21 and are exposed to the outside from the second side surface 54 of the sealing resin 50. This structure allows the support leads 28, along with the first suspension leads 23, to resist bending in the third direction z when a load in the third direction z acts on the first die pad 21. This further reduces deflection of the first suspension leads 23 in the third direction z compared to the semiconductor device A10, thereby further stabilizing the posture of the first die pad 21.

[0118] The present disclosure is not limited to the above-described embodiment, and various design changes can be freely made to the specific structure of each part of the present disclosure.

[0119] The present disclosure includes the embodiments described in the following supplementary notes.

[0120] Supplementary Note 1. A semiconductor device comprising:

[0121] a first chip pad;

[0122] a first suspension lead connected to one side of the first chip pad in a first direction;

[0123] a second suspension lead, located on a side opposite to the first suspension lead with respect to the first chip pad as a reference, and connected to the first chip pad;

[0124] a first semiconductor element mounted on the first die pad; and

[0125] a sealing resin covering the first die pad and the first semiconductor element,

[0126] The sealing resin has two first side surfaces facing opposite sides in the first direction, and a second side surface facing a second direction orthogonal to the first direction.

[0127] The first suspension lead and the second suspension lead are separated from the two first side surfaces and exposed to the outside from the second side surface.

[0128] The first suspension lead has a first inner portion covered with the sealing resin and a first outer portion connected to the first inner portion and exposed to the outside.

[0129] The first chip pad has a first edge, which extends along the first direction and is located closest to the second side surface.

[0130] When viewed in a third direction orthogonal to the first direction and the second direction, the first inner portion includes a first portion from a boundary with an extension line of the first edge to the first chip pad.

[0131] A cross-sectional area of the first portion relative to the direction in which the first portion extends is larger than any cross-sectional area of the first outer portion relative to the direction in which the first portion extends.

[0132] Supplementary note 2. The semiconductor device according to Supplementary note 1, wherein

[0133] The first inner portion includes a second portion connecting the first portion to the first outer portion,

[0134] A cross-sectional area of the second portion relative to the direction in which the second portion extends is larger than any cross-sectional area of the first outer portion relative to the direction in which the first portion extends.

[0135] Supplementary note 3. The semiconductor device according to Supplementary note 2, wherein

[0136] The second suspension lead has a second inner portion covered with the sealing resin and a second outer portion connected to the second inner portion and exposed to the outside.

[0137] A cross-sectional area of the second inner portion relative to a direction in which the second inner portion extends is larger than any cross-sectional area of the second outer portion relative to a direction in which the second inner portion extends.

[0138] Supplementary note 4. The semiconductor device according to Supplementary note 3, wherein

[0139] When viewed in the third direction, the first outer portion and the second outer portion extend in the second direction respectively.

[0140] Supplementary note 5. The semiconductor device according to Supplementary note 4, wherein

[0141] A cutting mark is formed on the first outer portion and faces the first direction.

[0142] The first outer portion includes: a third portion located between the second side surface and the cut mark; and a fourth portion located on a side opposite to the third portion with respect to the cut mark.

[0143] A cross-sectional area of the third portion relative to the direction in which the third portion extends is larger than a cross-sectional area of the fourth portion relative to the direction in which the fourth portion extends.

[0144] Supplementary Note 6. The semiconductor device according to any one of Supplementary Notes 3 to 5, further comprising:

[0145] a second chip pad located away from the first chip pad along the second direction; and

[0146] a second semiconductor element mounted on the second die pad;

[0147] The second die pad and the second semiconductor element are covered with the sealing resin.

[0148] Supplementary Note 7. The semiconductor device according to Supplementary Note 6, further comprising:

[0149] a third suspension lead, located on one side of the first suspension lead with respect to the first chip pad in the first direction and connected to the second chip pad; and

[0150] a fourth suspension lead, located on a side opposite to the third suspension lead with respect to the second chip pad as a reference, and connected to the second chip pad;

[0151] The sealing resin has a third side surface facing a side opposite to the second side surface in the second direction.

[0152] The third suspending lead and the fourth suspending lead are respectively separated from the two first side surfaces and exposed to the outside from the third side surface.

[0153] Supplementary note 8. The semiconductor device according to Supplementary note 7, wherein

[0154] The third suspension lead has a third inner portion covered with the sealing resin and a third outer portion connected to the third inner portion and exposed to the outside.

[0155] A cross-sectional area of the third inner portion relative to the direction in which the third inner portion extends is larger than any cross-sectional area of the third outer portion relative to the direction in which the third inner portion extends.

[0156] Supplementary note 9. The semiconductor device according to Supplementary note 8, wherein

[0157] When viewed in the third direction, the area of the first chip pad is larger than the area of the second chip pad.

[0158] Supplementary note 10. The semiconductor device according to Supplementary note 9,

[0159] further comprising an insulating element mounted on the first die pad,

[0160] The insulating element is of inductive coupling type,

[0161] The insulating element is electrically connected to the first semiconductor element and the second semiconductor element respectively.

[0162] Supplementary note 11. The semiconductor device according to Supplementary note 10, wherein

[0163] The insulating element is located next to the first semiconductor element in the second direction,

[0164] The first chip pad is provided with two first holes and a second hole respectively penetrating the first chip pad in the third direction.

[0165] The two first holes are located on both sides of the first semiconductor element in the first direction.

[0166] The second hole is located between the first semiconductor element and the insulating element in the second direction.

[0167] Supplementary note 12. The semiconductor device according to Supplementary note 11, wherein

[0168] The second hole extends in the first direction.

[0169] Supplementary note 13. The semiconductor device according to Supplementary note 12, wherein

[0170] When viewed in the third direction, the first inner portion, the second inner portion, and the second hole respectively overlap with an imaginary line extending along the first direction.

[0171] Supplementary note 14. The semiconductor device according to Supplementary note 13, wherein

[0172] When viewed in the first direction, the first inner portion and the second inner portion respectively overlap with the first chip pad.

[0173] Supplementary note 15. The semiconductor device according to Supplementary note 14, wherein

[0174] When viewed in the first direction, the third inner portion overlaps the second chip pad.

[0175] Supplementary note 16. The semiconductor device according to Supplementary note 15,

[0176] It also includes a plurality of first intermediate leads, the plurality of first intermediate leads being located between the first suspension lead and the second suspension lead,

[0177] At least any one of the plurality of first intermediate leads is electrically connected to the first semiconductor element.

[0178] Supplementary note 17. The semiconductor device according to Supplementary note 16,

[0179] It also includes a plurality of second intermediate leads, the plurality of second intermediate leads being located between the third suspension lead and the fourth suspension lead,

[0180] At least any one of the plurality of second intermediate leads is electrically connected to the second semiconductor element.

[0181] Explanation of symbols

[0182] A10, A20, A30—semiconductor device; 11—first semiconductor element; 111—first electrode; 12—second semiconductor element; 121—second electrode; 13—insulating element; 131—third electrode; 132—fourth electrode; 21—first chip pad; 21A—first mounting surface; 21B—first edge; 211—first hole; 212—second hole; 213—third hole; 22—second chip pad; 22A—second mounting surface; 23—first suspension lead; 231—first inner portion; 231A—first part; 231B—second part; 232—first outer portion; 232A—cut mark; 232B—third part; 232C—fourth part; 24—second suspension lead; 241—second inner portion; 242—second outer portion; 25—third suspension lead; 251—third inner portion; 252—third outer portion; 26—fourth suspension lead; 261—first inner portion; 262—second outer portion; 263—third inner portion; 264—third outer portion; 265—third inner portion; 266—third outer portion; 267—second inner portion; 268—second inner portion; 269—second inner portion; 270—second inner portion; 271—second inner portion; 272—second outer portion; 273—second inner portion; 274—second inner portion; 275—second inner portion; 276—second inner portion; 277—second outer portion; 278—second inner portion; 279—second inner portion; 280—second inner portion; 281—second inner portion; 282—second outer portion; 283—second inner portion; 284—second inner portion; 285—second inner portion; 286—second inner portion; 2 4-interior; 262-4-exterior; 27-side lead; 271-interior; 272-exterior; 28-support lead; 28A-end surface; 29-bonding layer; 31-first intermediate lead; 311-interior; 312-exterior; 32-second intermediate lead; 321-interior; 322-exterior; 41-first conductor; 42-second conductor; 43-third conductor; 44-fourth conductor; 50-sealing resin; 51-top surface; 52 —bottom surface; 53—first side surface; 531—first upper part; 532—first lower part; 533—first middle part; 54—second side surface; 541—second upper part; 542—second lower part; 543—second middle part; 55—third side surface; 551—third upper part; 552—third lower part; 553—third middle part; 80—lead frame; 81—frame part; 82—connecting rod; x—first direction; y—second direction; z—third direction.

Claims

1. A semiconductor device, characterized in that: have: a first chip pad; a first suspension lead connected to one side of the first chip pad in a first direction; a second suspension lead, located on a side opposite to the first suspension lead with respect to the first chip pad as a reference, and connected to the first chip pad; a first semiconductor element mounted on the first chip pad; as well as a sealing resin covering the first die pad and the first semiconductor element, The sealing resin has two first side surfaces facing opposite sides in the first direction, and a second side surface facing a second direction orthogonal to the first direction. The first suspension lead and the second suspension lead are separated from the two first side surfaces and exposed to the outside from the second side surface. The first suspension lead has a first inner portion covered with the sealing resin and a first outer portion connected to the first inner portion and exposed to the outside. The first chip pad has a first edge, which extends along the first direction and is located closest to the second side surface. When viewed in a third direction orthogonal to the first direction and the second direction, the first inner portion includes a first portion from a boundary with an extension line of the first edge to the first chip pad. A cross-sectional area of the first portion relative to the direction in which the first portion extends is larger than any cross-sectional area of the first outer portion relative to the direction in which the first portion extends.

2. The semiconductor device according to claim 1, wherein The first inner portion includes a second portion connecting the first portion to the first outer portion, A cross-sectional area of the second portion relative to the direction in which the second portion extends is larger than any cross-sectional area of the first outer portion relative to the direction in which the first portion extends.

3. The semiconductor device according to claim 2, wherein The second suspension lead has a second inner portion covered with the sealing resin and a second outer portion connected to the second inner portion and exposed to the outside. A cross-sectional area of the second inner portion relative to the direction in which the second inner portion extends is larger than any cross-sectional area of the second outer portion relative to the direction in which the second inner portion extends.

4. The semiconductor device according to claim 3, wherein When viewed in the third direction, the first outer portion and the second outer portion extend in the second direction respectively.

5. The semiconductor device according to claim 4, wherein A cutting mark is formed on the first outer portion and faces the first direction. The first outer portion includes: a third portion located between the second side surface and the cut mark; and a fourth portion located on a side opposite to the third portion with the cut mark as a reference. A cross-sectional area of the third portion relative to the direction in which the third portion extends is larger than a cross-sectional area of the fourth portion relative to the direction in which the fourth portion extends.

6. The semiconductor device according to any one of claims 3 to 5, wherein: Also features: a second chip pad located away from the first chip pad along the second direction; and a second semiconductor element mounted on the second die pad; The second die pad and the second semiconductor element are covered with the sealing resin.

7. The semiconductor device according to claim 6, wherein: Also features: a third suspension lead, located on one side of the first suspension lead with respect to the first chip pad in the first direction and connected to the second chip pad; and a fourth suspension lead, located on a side opposite to the third suspension lead with respect to the second chip pad as a reference, and connected to the second chip pad; The sealing resin has a third side surface facing a side opposite to the second side surface in the second direction. The third suspending lead and the fourth suspending lead are respectively separated from the two first side surfaces and exposed to the outside from the third side surface.

8. The semiconductor device according to claim 7, wherein The third suspension lead has a third inner portion covered with the sealing resin and a third outer portion connected to the third inner portion and exposed to the outside. A cross-sectional area of the third inner portion relative to the direction in which the third inner portion extends is larger than any cross-sectional area of the third outer portion relative to the direction in which the third inner portion extends.

9. The semiconductor device according to claim 8, wherein When viewed in the third direction, the area of the first chip pad is larger than the area of the second chip pad.

10. The semiconductor device according to claim 9, wherein further comprising an insulating element mounted on the first die pad, The insulating element is of inductive coupling type, The insulating element is electrically connected to the first semiconductor element and the second semiconductor element respectively.

11. The semiconductor device according to claim 10, wherein The insulating element is located next to the first semiconductor element in the second direction, The first chip pad is provided with two first holes and a second hole respectively penetrating the first chip pad in the third direction. The two first holes are located on both sides of the first semiconductor element in the first direction. The second hole is located between the first semiconductor element and the insulating element in the second direction.

12. The semiconductor device according to claim 11, wherein The second hole extends in the first direction.

13. The semiconductor device according to claim 12, wherein: When viewed in the third direction, the first inner portion, the second inner portion, and the second hole respectively overlap with an imaginary line extending along the first direction.

14. The semiconductor device according to claim 13, wherein When viewed in the first direction, the first inner portion and the second inner portion respectively overlap with the first chip pad.

15. The semiconductor device according to claim 14, wherein When viewed in the first direction, the third inner portion overlaps the second chip pad.

16. The semiconductor device according to claim 15, wherein It also includes a plurality of first intermediate leads, the plurality of first intermediate leads being located between the first suspension lead and the second suspension lead, At least any one of the plurality of first intermediate leads is electrically connected to the first semiconductor element.

17. The semiconductor device according to claim 16, wherein It also includes a plurality of second intermediate leads, the plurality of second intermediate leads being located between the third suspension lead and the fourth suspension lead, At least any one of the plurality of second intermediate leads is electrically connected to the second semiconductor element.

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