Immersion type spiral wave plasma sputter coating device and method

Abstract

The invention discloses an immersion type helicon wave plasma sputter coating device and method, and belongs to the technical field of plasmas, the immersion type helicon wave plasma sputter coating device comprises an ion source part, a cavity part, a target part, a sample part, a matched cooling system, a matched vacuumizing system, a matched control system and the like; the spiral wave plasma source is used for generating plasmas, the target material is placed between the two annular magnets of the spiral wave plasma source, then the density of the plasmas for bombarding the target material is improved, the number of target material atoms sputtered from the surface of the target material is increased, and the sputtered target material atoms are distributed and deposited on a sample at a certain angle; and the particles are gradually accumulated on the surface of a sample through the processes of adsorption, diffusion and the like, so that sputter coating of the sample is realized. Wherein the sample is controlled by the servo motor to realize rotary motion, so that the uniformity of a film on the surface of the sample is improved.

Description

Technical Field

[0001] The present invention belongs to the technical field of plasma sputtering coating, and in particular relates to an immersion type spiral wave plasma sputtering coating device and method. Background Art

[0002] Plasma sputtering coating technology is a method of bombarding the target material with a high-energy ion beam, which causes the target atoms or molecules to break free from the lattice through momentum transfer and sputter out from the target surface. The sputtered target atoms or molecules fly toward the sample surface at a certain angle. After reaching the sample surface, the atoms or molecules gradually accumulate through adsorption, diffusion and other processes to form a dense and uniform film. The existing plasma sputtering coating technology mainly uses glow discharge, and the plasma density generated by glow discharge is about 10 9 cm -3 , the plasma density is low, which leads to low coating efficiency. Summary of the Invention

[0003] In order to overcome the high efficiency and uniformity of plasma sputtering coating technology, the present invention provides an immersion helicon wave plasma sputtering coating method.

[0004] The technical solution provided by the present invention is as follows:

[0005] An immersion helicon wave plasma sputtering coating device consists of four parts: an ion source part, a chamber part, a target part, a sample part, and a matching radio frequency system, a cooling system, a vacuum system, a temperature measurement system, and a control system.

[0006] The ion source part includes a mass flow meter, an air pipe, an ion source upper cover, a plasma chamber, an antenna, an ion source lower cover, a rectangular sealing rubber ring, a support screw, a magnet fixing plate, a ring magnet and an L-shaped sealing rubber ring. Among them, the gas enters the plasma chamber through the air pipe, and the air intake is controlled by the mass flow meter. First, the ion source upper cover, the ion source lower cover and the plasma chamber are squeezed by the support screw, thereby realizing the pre-fixation of the plasma chamber, and the negative pressure generated during vacuuming further tightens the three. The plasma chamber and the ion source upper cover are vacuum-sealed by using an L-shaped sealing rubber ring, and the plasma chamber and the ion source lower cover are vacuum-sealed by using a rectangular sealing rubber ring. The antenna is at the bottom of the plasma chamber and the two are coaxial. The ring magnet is fixed to the right side of the antenna through the magnet fixing plate;

[0007] The chamber includes the vacuum chamber, the flange connecting the chamber and the target, the flange connecting the chamber and the sample, the flange connecting the chamber and the ion source, the molecular pump, and the observation window. The molecular pump and the observation window are all connected to the vacuum chamber using flanges.

[0008] The target material part includes a target material, a target water-cooling base, a magnet fixing cover, a ring magnet 2, a metal water pipe, a Swagelok vacuum ferrule, a metal water pipe 2, an insulating water channel, a target support base plate, a quick-connect connector, a support shaft 1, an insulating shaft, a support shaft 2, a bellows, and a magnet fixing box. Among them, the target material and the target water-cooling base are fixed by bolts, the target water-cooling base and the support shaft 2 are fixed by bolts, the support shaft 1 and the support shaft 2 are connected and fixed by using an insulating shaft, and the support shaft 1 is fixed to the target support base plate by bolts to achieve overall fixation on the target support base plate. The metal water pipe 1 is fixed to the target water-cooling base by welding, the metal water pipe 1 and the metal water pipe 2 are connected by a bellows, and the metal water pipe 1 and the bellows, as well as the metal water pipe 2 and the bellows, are fixed and sealed by a Swagelok vacuum ferrule. The metal water pipe 2 and the target support base plate are connected by an insulating water channel, and the water inlet and outlet are both connected to quick-connect connectors;

[0009] The sample part includes a fixing plate, a sample, a sample placement plate, a heating plate fixing plate, a heating plate, a servo motor fixing cover, a cooling copper plate 1, a servo motor, a servo motor cooling base plate, a servo motor water-cooling base, a connecting water pipe, a sample support plate, an O-ring, a connector 1, a ceramic pillar 1, a cooling copper plate 2, a connector 2, a ceramic pillar 2, and a connector 3. Among them, the sample is placed on the sample placement plate and fixed by a fixing plate. The sample placement plate and connector 3, connector 3 and ceramic pillar 2, ceramic pillar 2 and connector 2, and connector 2 and servo motor are all fixed by top screws. The heating plate and the heating plate fixing plate are fixedly connected by top screws. The heating plate fixing plate and connector 1 are supported by ceramic pillar 1, and the heating plate fixing plate and ceramic pillar 1, as well as ceramic pillar 1 and the servo motor water-cooling base plate are fixedly connected by top screws. Connector 1 and the servo motor cooling base plate are fixed by bolts. The servo motor is placed in the center of the servo motor water-cooling baseplate and secured by cooling copper plates 1 and 2 and the servo motor fixing cover. The servo motor water-cooling baseplate and servo motor water-cooling baseplate are fastened with bolts and sealed with an O-ring. The sample support plate and servo motor water-cooling baseplate are connected and secured by connecting water pipes and sealed with an O-ring.

[0010] The ion source and chamber are fixed together by bolts between the ion source lower cover and the flange connecting the chamber and ion source. The target and chamber are fixed together by bolts between the target support base and the flange connecting the chamber and target. The sample and chamber are fixed together by bolts between the sample support plate and the flange connecting the chamber and sample.

[0011] In the ion source part, the RF system applies RF energy to the antenna through the RF system to ionize the incoming gas into plasma.

[0012] The cooling system is divided into two parts. The first part of the cooling system is in the target part, which realizes the cooling of the target material. The cooling water flows into the insulating water channel, metal water pipe 2, bellows, metal water pipe 1 in sequence, and finally enters the target water-cooled base from the first water inlet. The cooling water flows through the spiral water channel inside the target water-cooled base, flows out from the first water outlet, passes through metal water pipe 1, bellows, metal water pipe 2, insulating water channel in sequence, and finally flows out. The second part of the cooling system is in the sample part, which realizes the cooling of the servo motor. The cooling water connects the water pipe and flows into the second water inlet, flows into the target water-cooled base, flows out from the second water outlet, and finally flows out through the connecting water pipe.

[0013] The vacuum pumping system is used in the chamber part to evacuate the vacuum chamber so that the vacuum inside the vacuum chamber meets the vacuum degree requirements.

[0014] The temperature measurement system consists of two parts. The first part is located in the target area and uses thermocouples to measure the temperature of the target during sputtering. The second part is located in the chamber and uses lasers to measure the surface temperature of the sample during sputtering.

[0015] The control system consists of two parts: the first part is the servo motor control system, which controls the servo motor's operation and stop as well as its speed; the second part is the heating plate control system, which controls the operation and stop of the heating plate as well as its heating power.

[0016] An immersion helicon wave plasma sputtering coating method comprises the following steps:

[0017] Step 1: introducing argon gas into the plasma chamber and exciting the helicon wave plasma through the radio frequency system;

[0018] Step 2: The target is loaded with a negative high voltage of 1 kV, and the plasma is focused by a magnetic field to bombard the target surface, and the sputtered atoms are deposited at an adjustable angle;

[0019] Step 3: The sample is rotated at 1-100 rpm by a servo motor, and the heating plate is radiantly heated to the set temperature;

[0020] Step 4: The cooling system operates synchronously, the target temperature is ≤80℃, and the servo motor temperature is ≤200℃;

[0021] Step 5: Use thermocouples and laser temperature measurement to monitor the target and sample temperatures in real time and adjust process parameters.

[0022] In the above technical solution, a helicon wave plasma source is used to excite plasma, and the target material is placed between two annular magnets to increase the density of plasma bombarding the target material; a magnet fixing box is provided outside the annular magnet inside the chamber to prevent the plasma from affecting the magnet.

[0023] In this technical solution, bolts are used to connect the target's water-cooled base to the support shaft, allowing the target's vertical angle to be adjusted, thereby adjusting the sputtering angle of the target atoms. Furthermore, negative high voltage is applied to the target to accelerate the plasma toward the target, and insulating water channels and an insulating shaft isolate the potentials of the vacuum chamber and the target from each other.

[0024] In the above technical solution, the sample is radiantly heated by the heating plate to control the surface temperature of the sample, thereby controlling the density of the thin film on the sample surface; at the same time, the sample is connected to the servo motor to achieve rotational motion during the coating process, thereby improving the uniformity of the thin film on the sample surface.

[0025] In the above technical solution, a cooling system is provided for the target material and the servo motor to cool them.

[0026] Beneficial effects:

[0027] 1. High-density plasma: The spiral wave magnetic field couples the radio frequency energy, which significantly increases the plasma density and the sputtering efficiency by more than 50%;

[0028] 2. Uniform film formation: sample rotation and angle-adjustable target work together to ensure film thickness deviation of ≤3%;

[0029] 3. Thermal management optimization: Split cooling system ensures target temperature ≤80℃ and servo motor operating temperature ≤200℃;

[0030] 4. Potential isolation: PEEK insulation structure blocks current leakage between the chamber and the target, improving safety;

[0031] Process controllability: Real-time temperature control and speed regulation support nanometer-level film precision. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 This is the overall structure diagram of the sputtering coating device;

[0033] Figure 2 It is a partial cross-sectional view of the ion source;

[0034] Figure 3 This is a partial structural diagram of the chamber;

[0035] Figure 4 It is a partial cross-sectional view of the target material;

[0036] Figure 5This is the structural diagram of the water-cooling base plate;

[0037] Figure 6 It is a partial cross-sectional view of the sample;

[0038] Figure 7 A partial cross-sectional view of the servo motor cooling structure.

[0039] Figure numerals: 1, ion source part; 2, chamber part; 3, target part; 4, sample part; 101, mass flow meter; 102, air pipe; 103, ion source upper cover; 104, plasma chamber; 105, antenna; 106, ion source lower cover; 107, rectangular sealing rubber ring; 108, support screw; 109, magnet fixing plate; 110, annular magnet one; 111, L-shaped sealing rubber ring; 201, vacuum chamber; 202, chamber and target part connecting flange; 203, chamber and sample part connecting flange; 204, chamber and ion source part connecting flange; 205, molecular pump; 206, observation window; 301, target; 302, target water-cooling base; 303, magnet fixing cover; 304, annular magnet two; 305, metal water pipe one; 30 6. Swagelok vacuum ferrule; 307. Metal water pipe 2; 308. Insulated water channel; 309. Target support base plate; 310. Quick-connect plug; 311. Support shaft 1; 312. Insulated shaft; 313. Support shaft 2; 314. Bellows; 302-1. Water-cooled base plate; 302-2. Water-cooled base; 302-3. First water outlet; 302-4. Spiral water channel; 302-5. First water inlet; 401. Fixing plate; 402. Sample; 403. Sample placement tray; 404. Heating plate fixing plate; 405. Heating plate; 406. Servo motor fixing cover; 407. Cooling copper plate 1; 408. Servo motor; 409. Servo motor cooling base plate; 410. Servo motor water-cooled base; 410-1. Second water inlet; 410-2. Second water outlet; 411. Connecting water pipe; 412. Sample support plate; 413. O-ring; 414. Connector 1; 415. Ceramic pillar 1; 416. Cooling copper plate 2; 417. Connector 2; 418. Ceramic pillar 2; 419. Connector 3. DETAILED DESCRIPTION

[0040] The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments. However, the following embodiments are intended only to explain the present invention, and the scope of protection of the present invention should include the entire contents of the claims. Moreover, through the description of the following embodiments, those skilled in the art can fully implement the entire contents of the claims of the present invention.

[0041] Example

[0042] like Figure 1As shown, this embodiment provides a truncated spiral wave plasma sputtering coating device, which is divided into four parts, an ion source part 1, a chamber part 2, a target material part 3, a sample part 4, and a matching radio frequency system, a cooling system, a vacuum system, a temperature measurement system and a control system.

[0043] like Figure 2 As shown, ion source part 1 comprises mass flow meter 101, trachea 102, ion source upper cover plate 103, plasma chamber 104, antenna 105, ion source lower cover plate 106, rectangular sealing rubber ring 107, support screw 108, magnet fixing plate 109, annular magnet 110 and L-type sealing rubber ring 111.Wherein, gas enters plasma chamber 104 by trachea 102, and air intake is controlled by mass flow meter 101.First, ion source upper cover plate 103, ion source lower cover plate 106 and plasma chamber 104 are extruded by support screw 108, and then plasma chamber 104 is pre-fixed, and the negative pressure produced during vacuuming further tightens three.Between plasma chamber 104 and ion source upper cover plate 103, vacuum seal is carried out by using L-type sealing rubber ring 111, and plasma chamber 104 and ion source lower cover plate 106 are vacuum sealed by using rectangular sealing rubber ring 107. The antenna 105 is located at the bottom of the plasma chamber 104 and the two are coaxial. The ring magnet 110 is fixed to the right side of the antenna through the magnet fixing plate 109.

[0044] like Figure 3 As shown, the chamber portion includes a vacuum chamber 201, a flange 202 for connecting the chamber to the target, a flange 203 for connecting the chamber to the sample, a flange 204 for connecting the chamber to the ion source, a molecular pump 205, and an observation window 206. The molecular pump 205 and the observation window 206 are both connected to the vacuum chamber 201 using flange connections.

[0045] like Figure 4As shown, the target portion includes a target 301, a target water-cooled base 302, a magnet fixing cover 303, a second annular magnet 304, a first metal water pipe 305, a Swagelok vacuum ferrule 306, a second metal water pipe 307, an insulating water channel 308, a target support base 309, a quick connector 310, a first support shaft 311, an insulating shaft 312, a second support shaft 313, and a bellows 314. The target 301 and the target water-cooled base 302 are fixed by bolts, the target water-cooled base 302 and the second support shaft 313 are fixed by bolts, the first support shaft 311 and the second support shaft 313 are connected and fixed by using the insulating shaft 312, and the first support shaft 311 is fixed to the target support base 309 by bolts, so that the entire target is fixed to the target support base 309. Metal water pipe 1 305 is welded to the target water-cooling base 302. A bellows 314 connects metal water pipe 1 305 and metal water pipe 2 307. Swagelok vacuum ferrules 306 seal the connection between metal water pipe 1 305 and bellows 314, and between metal water pipe 2 307 and bellows 314. An insulating water channel 308 connects metal water pipe 2 307 and the target support base plate 309. Quick-connect connectors 310 are installed at both the water inlet and outlet.

[0046] like Figure 6 As shown, the sample section includes a fixing plate 401, sample 402, sample placement plate 403, heating plate fixing plate 404, heating plate 405, servo motor fixing cover 406, cooling copper plate 1 407, servo motor 408, servo motor cooling base plate 409, servo motor water cooling base 410, connecting water pipe 411, sample support plate 412, O-ring 413, connector 1 414, ceramic support 1 415, cooling copper plate 2 416, connector 2 417, ceramic support 2 418, and connector 3 419. Sample 402 is placed on sample placement plate 403 and secured by fixing plate 401. Screws are used to secure sample placement plate 403 to connector 3 419, connector 3 419 to ceramic support 2 418, ceramic support 2 418 to connector 2 417, and connector 2 417 to servo motor 408. The heating plate 405 is fixedly connected to the heating plate fixing plate 404 by means of a top screw. The heating plate fixing plate 404 and the connecting piece 1 414 are supported by a ceramic support 1 415. The heating plate fixing plate 404 and the ceramic support 1 415, as well as the ceramic support 1 415 and the servo motor water cooling base plate 409 are fixedly connected by a top screw. The connecting piece 1 414 and the servo motor cooling base plate 409 are fixed by means of a bolt connection. The servo motor 408 is placed in the center of the servo motor water cooling base plate 409 and is fixed by means of a cooling copper plate 1 407, a cooling copper plate 2 416 and a servo motor fixing cover 406. Figure 7As shown, the servo motor water-cooled bottom plate 409 and the servo motor water-cooled base 410 are fastened by bolts and water-sealed with an O-ring 413. The sample support plate 412 and the servo motor water-cooled base 410 are connected and fixed by a connecting water pipe 411 and sealed with an O-ring 413.

[0047] The ion source section 1 and chamber section 2 are secured together by bolts connected between the ion source lower cover plate 106 and the chamber-to-ion source section connection flange 204. The target section 3 and chamber section 2 are secured together by bolts connected between the target support base plate 309 and the chamber-to-target section connection flange 202. The sample section 4 and chamber section 2 are secured together by bolts connected between the sample support plate 412 and the chamber-to-sample section connection flange 203.

[0048] The radio frequency system is in the ion source part 1, and applies radio frequency energy to the antenna 105 through the radio frequency system to ionize the incoming gas into plasma.

[0049] The cooling system is divided into two parts. The first part of the cooling system is in the target part 3, which realizes the cooling of the target 301. The cooling water flows into the insulating water channel 308, the metal water pipe 2 307, the bellows 314, the metal water pipe 1 305 in sequence, and finally enters the target water-cooled base 302 from the first water inlet 302-5. Figure 5 As shown, cooling water flows through the spiral water channel within the target water-cooled base 302, exits through the first water outlet 302-2, passes through metal water pipe 1 305, bellows 306, metal water pipe 2 307, and insulating water channel 308, and finally exits. The second cooling system, located in sample section 4, cools the servo motor 408. Cooling water flows through connecting water pipe 411 into the second water inlet 410-1, flows into the servo motor water-cooled base 410, exits through the second water outlet 410-2, and finally exits through connecting water pipe 411.

[0050] The vacuum pumping system performs vacuum pumping on the vacuum chamber 201 in the chamber part 2 so that the vacuum inside the vacuum chamber 201 meets the vacuum degree required for use.

[0051] The temperature measurement system consists of two parts. The first part is located in the target part 3 and uses thermocouples to measure the temperature of the target 301 during sputtering. The second part is located in the chamber part 2 and uses lasers to measure the surface temperature of the sample 402 during sputtering.

[0052] The control system is divided into two parts. The first part is the servo motor control system, which controls the operation and stop of the servo motor 408 and the speed. The second part is the heating plate control system, which controls the operation and stop of the heating plate 405 and the heating power.

[0053] Preferably, the ion source is a helicon wave plasma source, and the target 301 is placed between two annular magnets to increase the density of the plasma bombarding the target 301; a magnet fixing box is provided outside the annular magnet 304 inside the vacuum chamber 201 to prevent the plasma from affecting the magnet.

[0054] Preferably, the target water-cooled base 302 is bolted to the second support shaft 313, allowing the vertical angle of the target 301 to be adjusted, thereby adjusting the sputtering angle of the target atoms. Furthermore, a negative high voltage is applied to the target 301 to accelerate the plasma drawn toward the target 301. Insulating water channels 308 and insulating shafts 312 isolate the potentials of the vacuum chamber 201 and the target 301 from each other.

[0055] Preferably, the sample 402 is radiantly heated by a heating plate 405 to control the surface temperature of the sample 402, thereby controlling the density of the thin film on the surface of the sample 402; at the same time, the sample 402 is connected to the servo motor 408 to achieve rotational motion during the coating process, thereby improving the uniformity of the thin film on the surface of the sample 402.

[0056] Preferably, the target 301 and the servo motor 408 are both provided with a cooling system to cool them.

[0057] Preferably, the plasma chamber 104 is made of quartz material, with an inner diameter of 40 mm, an outer diameter of 50 mm, and a height of 150 mm.

[0058] Preferably, the materials used for the annular magnet 110 and the annular magnet 2 304 are neodymium iron boron or samarium cobalt. The inner and outer end surfaces of the ring are magnetized, and the core magnetic field strength can reach 1.1T. The inner and outer end surfaces of the annular magnet are axially magnetized to form an axial magnetic field focusing.

[0059] Preferably, the antenna 105 is a Nagoya III type antenna, which has a cooling channel inside, is made of copper, and has a height of 80 mm.

[0060] Preferably, the vacuum chamber 201 is a cube with a height of 265 mm and a shell thickness of 3 mm, and is made of stainless steel.

[0061] Preferably, the target 301 is made of titanium, scandium or molybdenum, and its size can be adjusted according to the sample to be plated. In this embodiment, the target has a diameter of 85 mm and a thickness of 5 mm.

[0062] Preferably, the internal cooling channel of the target water-cooled substrate 302 is a spiral water channel 302 - 4 .

[0063] Preferably, the insulating water channel 308 and the insulating shaft 312 are made of peek material to achieve the function of isolating the potential of the vacuum chamber 201 and the target material 301 .

[0064] Preferably, the remaining components of the target part 3 are made of stainless steel.

[0065] Preferably, the heating disk 405 is a radiation heating disk with a maximum heating power of 500 W. By adjusting the power, the surface temperature of the sample can be adjusted to form a denser film.

[0066] Preferably, the cooling copper plate 1 407 , the cooling copper plate 2 416 , the servo motor fixed cover plate 406 , the servo motor water-cooling bottom plate 409 and the servo motor water-cooling base 410 are all made of copper material with excellent thermal conductivity.

[0067] Preferably, the cooling channel structure of the servo motor 408 is a heat sink type cooling structure.

[0068] Preferably, the servo motor 408 is of model D35.1, and has an operating temperature within 200°C.

[0069] Preferably, the sample support plate 412, the connecting water pipe 411, the first connector 414, the second connector 417, the third connector 419, the sample placement plate 403, the heating plate fixing plate 404 and the fixing plate 401 are all made of stainless steel.

[0070] Preferably, the introduced gas is argon, and the intake volume is 20 SCCM.

[0071] Preferably, the target material 301 is fed with a high voltage of 1 kV to achieve the acceleration and extraction of the ion beam.

[0072] Preferably, the resistivity of the cooling water should be greater than or equal to 16 MΩ·cm, and the cooling water pressure, flow rate, and temperature can be set by a cooling machine, for example: cooling water pressure 0.2-0.5 MPa, flow rate 25 L / min.

[0073] Preferably, the sealing rubber ring is made of fluororubber and has a rectangular or circular cross section. It is placed in the sealing groove and is squeezed to fill the sealing groove to form a vacuum seal.

[0074] The foregoing is merely a list of specific embodiments of the present application, intended to enable those skilled in the art to understand or implement the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application is not limited to the embodiments shown herein, but is intended to conform to the broadest scope consistent with the principles and novel features of the present application.

Claims

1. An immersion helicon wave plasma sputtering coating device, characterized in that: include: An ion source part (1): comprising a quartz plasma chamber (104), a Nagoya III type antenna (105), a first ring magnet (110) and a second ring magnet (304), wherein the ring magnets are isolated from the plasma by a magnet fixing box; Chamber part (2): The stainless steel vacuum chamber (201) is connected to the molecular pump (205), the observation window (206), and is connected to the ion source, the target material, and the sample part through the flange; Target material part (3): comprising a target material (301), a target water-cooling base (302), an angle-adjustable support shaft (313), a bellows (314) and a PEEK insulating water channel (308); Sample part (4): comprising a rotationally driven servo motor (408), a radiant heating plate (405), ceramic supports (415 / 418) and a copper cooling structure; Split cooling system: the target cooling circuit and the servo motor cooling circuit operate independently; Control system: Integrates servo motor speed regulation module and heating plate power regulation module.

2. The device according to claim 1, characterized in that: The annular magnet 1 (110) and the annular magnet 2 (304) are made of neodymium iron boron, with a core magnetic field strength of 1.1 T. The target (301) is located in the magnetic field focusing area between the two magnets, and the target inclination angle is adjusted by the support shaft (313) within a range of 0° to 45°.

3. The device according to claim 1, characterized in that: The target material cooling circuit comprises a target material water-cooling base (302) with a spiral water channel (302-4), cooling water circulates through an insulating water channel (308) and a bellows (314), and the bellows connection is sealed with a Swagelok vacuum ferrule (306).

4. The device according to claim 1, characterized in that: The servo motor (408) of the sample part (4) is supported by ceramic pillars (415 / 418) for insulation, and the cooling copper plate (407 / 416) is matched with a heat sink type cooling channel, and the operating temperature is ≤200°C.

5. The device according to claim 1, characterized in that: The vacuum chamber (201) is a cubic structure, and the vacuum degree is ≤1×10 -3 Pa, an L-shaped rubber ring (111) and a rectangular rubber ring (107) are used for sealing, and the target material and the chamber are electrically isolated by an insulating shaft (312).

6. An immersion helicon wave plasma sputtering coating method based on the device of any one of claims 1 to 5, characterized in that: The following steps are involved: Step 1: introducing argon gas into the plasma chamber (104) and exciting helicon wave plasma through a radio frequency system; Step 2: The target (301) is loaded with a negative high voltage of 1 kV, and the plasma is focused by a magnetic field to bombard the target surface, and the sputtered atoms are deposited at an adjustable angle; Step 3: The sample (402) is rotated at 1-100 rpm by the servo motor (408), and the heating plate (405) is radiantly heated to a set temperature; Step 4: The cooling system operates synchronously, the target temperature is ≤80℃, and the servo motor temperature is ≤200℃; Step 5: Use thermocouples and laser temperature measurement to monitor the target and sample temperatures in real time and adjust process parameters.

7. The method according to claim 6, characterized in that: In step 1, the RF system frequency is 13.56 MHz, the power is 500-1500 W, and the argon flow rate is 20 SCCM.

8. The method according to claim 6, wherein: In step 2, the target tilt adjustment and sample rotation are coordinated to ensure that the film thickness deviation is ≤3% and the deposition rate is ≥50 nm / min.

9. The method according to claim 6, wherein: In step 3, the power of the heating plate (405) is 0~500 W, the sample surface temperature is controlled with an accuracy of ±5°C, and the film density is adjusted by the temperature gradient.

10. The method according to claim 6, wherein: In step 4, the cooling water pressure is 0.2-0.5 MPa, the flow rate is 25 L / min, and the insulation water channel (308) withstand voltage is ≥10 kV.

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