Semiconductor film performance evaluation method and electrode assembly

Abstract

The invention belongs to the technical field of field effect transistors, and particularly relates to a semiconductor film performance evaluation method and an electrode assembly. The semiconductor film performance evaluation method provided by the invention comprises the following steps of: respectively preparing MXene-based conductive ink with different work functions into electrode layers with different work functions, and respectively adsorbing the two electrode layers with the same work functions by using two probes to serve as a source electrode and a drain electrode of a bottom gate top contact thin film transistor to carry out an electrical performance test, and the electrode layers with different work functions are adopted to carry out electrical property testing, the electrical properties measured by the electrode layers with different work functions are compared, and the work function of the electrode layer corresponding to the higher electrical property is used to represent the Homo energy level of the semiconductor film. The electrode layer is prepared by using the conductive ink with the adjustable work function, the transferable design of the test electrode is realized in a probe adsorption mode, the test efficiency and accuracy are improved, and the non-destructive contact design of the electrode layer can avoid the damage of the film and improve the test reliability.

Description

Technical Field

[0001] The present invention relates to the technical field of field effect transistors, and in particular to a semiconductor thin film performance evaluation method and an electrode assembly. Background Art

[0002] As semiconductor materials develop towards diversification and functionalization (such as flexible electronics, organic semiconductors and new two-dimensional materials), higher requirements are placed on the work function matching of semiconductor films and the accurate evaluation of interface electrical properties.

[0003] Traditional testing methods involve thermally evaporating metals such as Au, Ag, Al, and Ti under vacuum and high temperature. These metals are then patterned and deposited on a semiconductor thin film layer using a mask to serve as the source and drain electrodes for thin-film transistor devices, allowing for charge injection. The thermal evaporation process involves heating the metal material until it vaporizes and then depositing it onto the semiconductor thin film surface to form the electrodes. Thermal evaporation typically uses metals such as gold, silver, and aluminum, which have good conductivity and excellent contact with the semiconductor thin film. After thermally evaporating the metal electrodes, IV (current-voltage) characteristics testing is typically performed. By applying varying voltages, the change in current is measured. By measuring the current-voltage characteristics between the source and drain electrodes, electrical parameters such as the resistivity, carrier concentration, and mobility of the semiconductor thin film can be determined, as well as the device's electrical performance, including on-state current, on / off ratio, subthreshold swing (SS), and field-effect mobility. The contact between the metal source and drain electrodes and the semiconductor thin film is crucial. Good contact reduces contact resistance, thereby improving test accuracy.

[0004] However, the traditional metal probe technology has the following limitations: (1) Work function fixity: The work function of conventional thermally evaporated metal electrodes cannot be adjusted, and it is difficult to adapt to the energy level matching requirements of different semiconductor materials. For example, the requirements for electrode work function of p-type and n-type semiconductors are significantly different. Traditional metal electrodes need to be frequently replaced or rely on complex surface treatment. In addition, traditional metal electrodes are not easy to transfer after being evaporated on semiconductor films. When the work function of the electrode and the semiconductor material do not match, in order to accurately evaluate the performance of the semiconductor film, the thin film transistor device needs to be re-prepared for electrical performance testing, resulting in low efficiency and poor repeatability of semiconductor film performance testing; (2) Interface contact problem: When the traditional thermally evaporated metal electrode contacts the semiconductor film, it is easy to It causes Fermi level pinning and high temperature damage to the semiconductor structure, easily introduces interface defects, and affects the carrier transport characteristics. In addition, in flexible substrates or organic semiconductor films, hard probes can easily cause damage to the electrodes or semiconductor films when contacting the electrodes for testing, destroying the integrity of the device; (3) Insufficient test accuracy: For applications that are sensitive to work functions (such as Schottky junctions and organic light-emitting transistors), traditional methods are difficult to dynamically control the work function to optimize the built-in electric field or contact barrier, resulting in limited device performance characterization; (4) Poor process compatibility: Existing electrode preparation technologies (such as sputtering and evaporation) are difficult to achieve preparation at normal pressure and temperature and have poor work function variability, which affects the test efficiency of the device and is extremely destructive to the semiconductor layer.

[0005] Therefore, there is an urgent need for a testing method and a testing electrode assembly that can accurately test the electrical properties of semiconductor films without causing damage to the semiconductor films. Summary of the Invention

[0006] The purpose of the present invention is to provide a semiconductor thin film performance evaluation method to solve the problems of poor test accuracy, low test efficiency and poor reliability in the prior art when testing the electrical properties of semiconductor thin films.

[0007] The second object of the present invention is to provide an electrode assembly for evaluating the performance of semiconductor thin films, so as to solve the problems of poor test accuracy, low test efficiency and poor reliability in the prior art when testing the electrical properties of semiconductor thin films.

[0008] In order to solve the above technical problems, the technical solution of the semiconductor thin film performance evaluation method of the present invention is: A method for evaluating semiconductor thin film performance comprises the following steps: preparing MXene-based conductive inks with different work functions into electrode layers with different work functions, respectively adsorbing two electrode layers with the same work function using two probes as the source electrode and drain electrode of a bottom-gate top-contact thin-film transistor for electrical performance testing, and also using electrode layers with different work functions for electrical performance testing, comparing the electrical performances measured for the electrode layers with different work functions, and characterizing the Homo energy level of the semiconductor thin film using the work function of the electrode layer corresponding to the higher electrical performance.

[0009] The present invention improves upon existing technologies by providing a method for evaluating semiconductor film performance. By utilizing the adjustable work function of conductive ink, electrode layers with different work functions are used as the source and drain electrodes of bottom-gate, top-contact thin-film transistors for on-state current testing. The on-state currents obtained from the tests of electrode layers with different work functions are compared to determine the work function of the electrode layer with the best on-state current. This is used to characterize the Homo energy level of the semiconductor film. This is because when the work function of the electrode layer matches that of the semiconductor film, it significantly improves carrier injection efficiency and forms an ohmic contact with the semiconductor film at the corresponding energy level, thereby improving electrical performance. The testing method provided by the present invention can dynamically control the work function to optimize the built-in electric field or contact barrier, enabling faster and more accurate characterization of semiconductor film performance. Furthermore, by monitoring and comparing the interface response between the electrode work function and the semiconductor film, it can provide a direct basis for the optimized design of high-performance optoelectronic devices (such as Schottky diodes and organic light-emitting transistors).

[0010] The testing method provided by the present invention achieves the transferability of the test electrode by adsorbing the electrode layer with a probe, eliminating the need for direct contact with a hard probe, avoiding scratches or structural damage to the semiconductor film caused by pressure in traditional testing, and not damaging the integrity of the device. It is particularly suitable for the precise characterization of brittle semiconductor materials such as two-dimensional materials and organic-inorganic hybrid perovskites. The transferable design enables rapid replacement of the test electrode layer, greatly improving the testing efficiency, and the non-destructive contact design between the electrode layer and the semiconductor film avoids film damage and improves the testing reliability. In addition, through the transferable electrode layer design, the probe can be rotated to test devices in different orientations and positions, expanding the testing scenarios and universality, and breaking through the traditional metal electrode processing dependence on vacuum coating equipment or high-temperature annealing processes (>300°C), and is particularly suitable for emerging fields such as heterojunction devices and flexible electronics.

[0011] To further improve the adaptability of the testing method to different semiconductor thin film materials, the work function of the MXene-based conductive ink is preferably in the range of 4.4-5.8 eV. This work function range covers the energy level range of common semiconductor materials such as DPh-BTBT, C8-BTBT, C10-DNTT, and other organic semiconductor materials.

[0012] To further improve work function adaptability, the MXene-based conductive ink preferably includes a two-dimensional MXene material and a dopant in a mass ratio of 1:(0-0.08). By varying the dopant ratio, the work function can be continuously controlled within the range of 4.4eV to 5.8eV.

[0013] In order to further improve the work function adaptability of the organic semiconductor film, preferably, the two-dimensional MXene material is titanium carbide and the dopant is PNDIT-F3N-Br.

[0014] To further improve the transferability of the electrode layer, the electrode layer is preferably prepared using a MXene-based conductive ink printing or coating method. The electrode layer provided by the present invention can be prepared by simple printing and coating methods at room temperature and pressure, eliminating the need for traditional metal electrode preparation, which requires high temperature and high pressure conditions such as sputtering and evaporation.

[0015] In order to further improve the transferability of the electrode layer and improve the adaptability of the substrate for preparing the electrode layer, preferably, when the electrode layer is prepared by a printing method or a coating method, the substrate is selected from one of a silicon substrate, an ITO substrate, and a silicon dioxide substrate.

[0016] To further improve the substrate compatibility for electrode layer preparation, the substrate is preferably coated with an organic semiconductor layer or an organic polymer layer. More preferably, the organic semiconductor layer is selected from a C10-DNTT organic semiconductor layer or a C8-BTBT organic semiconductor layer; and the organic polymer layer is a PET layer.

[0017] In order to better compare electrical performance, preferably, the electrical performance includes on-state current, on / off ratio, subthreshold swing and field effect mobility.

[0018] The technical solution of the electrode assembly for semiconductor thin film performance evaluation of the present invention is: An electrode assembly for evaluating semiconductor thin film performance includes multiple electrode layers arranged from low to high work functions. The electrode layers can be adsorbed on a probe and serve as a source electrode or a drain electrode of a bottom gate top contact thin film transistor.

[0019] The electrode assembly for evaluating the performance of semiconductor thin films provided by the present invention can switch between different work function electrode layers to test the electrical performance of bottom-gate top-contact thin-film transistors by setting multiple electrode layers with work functions from low to high, find the electrode layer that better matches the work function of the semiconductor thin film, and further more accurately characterize the Homo energy level of the semiconductor thin film; and the electrode assembly provided by the present invention can avoid scratches or structural damage to the semiconductor film, will not damage the integrity of the device, and does not need to be frequently replaced or rely on complex surface treatment like traditional metal electrodes, thereby improving test efficiency and high repeatability, and has the advantages of low cost, long life and good durability.

[0020] In order to further improve the adaptability of the test electrode assembly to different semiconductor thin film materials, preferably, the work function range of the electrode layer is 4.4~5.8eV. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 A photo of the MXene-based conductive ink used in the semiconductor thin film performance evaluation method according to Example 1 of the present invention; Figure 2 KPFM images and work function test results of conductive inks with different doping amounts according to Example 1 of the present invention; Figure 3 Electrode layer diagrams obtained for different substrates; Figure 4 This is a physical diagram of the adsorption and bonding of the gold-plated probe and the electrode layer in Example 1 of the present invention; Figure 5 Schematic diagram of a semiconductor thin film performance evaluation method according to Example 1 of the present invention; Figure 6 This is a graph showing the on-state current test results obtained by testing different work function electrode layers in Example 1 of the present invention; Figure 7 The Schottky barrier height SBH and gate voltage V when testing different work function electrode layers in Example 1 of the present invention GS curve chart; Figure 8 AFM images of the organic semiconductor film before and after the electrode layer is removed according to Example 1 of the present invention; Figure 9 This is a picture of one group of electrode layers in the electrode assembly of Example 2 of the present invention adsorbed on a probe. DETAILED DESCRIPTION

[0022] The technical concept of the semiconductor thin film performance evaluation method of the present invention is as follows: Existing technology generally requires constructing a thin-film transistor device when performing performance testing on semiconductor films. Metal is usually used as the source and drain electrodes of the thin-film transistor to test the electrical performance of the thin-film transistor. However, the work function of the metal source and drain electrodes is fixed and cannot be adjusted, which easily causes a mismatch with the energy level of the semiconductor film, resulting in inaccurate performance testing of the semiconductor film. In addition, the destructive contact design of the metal source and drain electrodes will damage the semiconductor film, reducing test reliability. In addition, the non-transfer design of the metal source and drain electrodes makes replacement complicated, greatly reducing test efficiency.

[0023] The present invention uses an electrode layer prepared with conductive ink with adjustable work function to achieve a transferable design of the test electrode by probe adsorption, which can quickly adapt to different semiconductor films, improve test efficiency and accuracy, and the non-destructive contact design of the electrode layer can avoid film damage and improve test reliability.

[0024] The semiconductor thin film performance evaluation method of the present invention comprises the following steps: (1) MXene-based conductive ink is composed of a two-dimensional MXene material and a dopant. By controlling the doping amount of the dopant, MXene-based conductive inks with different work functions are obtained, and the work function range of the MXene-based conductive inks is 4.4~5.8eV; the MXene-based conductive inks with different work functions are screen-printed on a substrate to prepare electrode layers with different work functions; (2) Use a gold-plated probe to adsorb the electrode layer to separate the electrode layer from the substrate, and use two probes to adsorb two electrode layers with the same work function as the source electrode and drain electrode of the bottom-gate top-contact thin-film transistor to perform electrical performance testing; (3) Use electrode layers with different work functions to test the electrical performance, compare the electrical performance of electrode layers with different work functions, and use the work function of the electrode layer corresponding to the higher electrical performance to characterize the Homo energy level of the semiconductor film.

[0025] It is understood that the MXene-based conductive ink can be prepared with reference to the preparation method of MXene-based conductive ink with adjustable work function disclosed in patent CN115537073A.

[0026] In a specific embodiment, the MXene-based conductive ink comprises titanium carbide and PNDIT-F3N-Br in a mass ratio of 1: (0-0.08).

[0027] In a specific embodiment, the substrate used for screen printing is any substrate for vapor-depositing a C10-DNTT semiconductor film, the thickness of the C10-DNTT semiconductor film is 10-20 nm, and the speed of vapor deposition is 0.1-0.2 Å / s.

[0028] In a specific embodiment, the thickness of the organic semiconductor layer in the bottom-gate top-contact thin film transistor is 10-20 nm.

[0029] The electrode assembly provided by the present invention for evaluating semiconductor thin film performance includes multiple electrode layers arranged from low to high work functions. The electrode layers can be adsorbed on a probe and serve as the source electrode or drain electrode of a bottom gate top contact thin film transistor.

[0030] It can be understood that more than two electrode layers with a specific work function can be provided, two of which serve as the source electrode and the drain electrode of the bottom-gate top-contact thin film transistor, respectively.

[0031] It is understandable that the electrode assembly can also include multiple probes, each probe adsorbs an electrode layer; or there can be only two probes, and the two probes respectively adsorb two electrode layers with the same work function. When the electrode layer with a different work function needs to be replaced, the adsorbed electrode layer is removed and replaced with a new electrode layer.

[0032] The embodiments of the present invention are further described below with reference to specific examples. Unless otherwise specified, the chemical reagents involved in the following examples are all commercially available conventional products.

[0033] 1. Specific embodiments of the semiconductor thin film performance evaluation method of the present invention Example 1 The semiconductor thin film performance evaluation method of this embodiment is as follows: (1) Preparation of electrode layer: MAX phase powder was etched with hydrofluoric acid for 24 hours, centrifuged at 3500r for 10 minutes, and then washed with water and centrifuged three times under the same centrifugal conditions. After washing to neutrality, the precipitate (titanium carbide) was collected as a two-dimensional MXene material; poly [[2,7-bis (2-ethylhexyl) -1,2,3,6,7,8-hexahydro-1,3,6,18-tetraoxybenzo [LMN] [3,8] phenanthroline-4,9-diyl] -2,5-thiophene diyl [9,9-bis [3- (dimethylamino) propyl] -9H-fluorene-2,7-diyl] -2,5-thiol (PNDIT-F3N-B r, CAS: 2169941-79-9, purchased from Fuan Optoelectronics) was added to a methanol solution and then shaken until it was uniformly dissolved to obtain a PNDIT-F3N-Br solution; titanium carbide and PNDIT-F3N-Br were placed in a vortex mixer at a mass ratio of 1:0 (without PNDIT-F3N-Br), 1:0.002, 1:0.006, 1:0.01, 1:0.014, and 1:0.018, respectively, and were shaken for 40 minutes to obtain MXene-based conductive inks with different PNDIT-F3N-Br doping amounts. A MXene-based conductive ink with a certain doping amount is shown in FIG. Figure 1 shown.

[0034] Conductive inks with different doping amounts have different work functions. Kelvin probe force microscopy (KPFM) was used to test the work functions of conductive inks with different doping amounts. The KPFM images and work function test results are shown in Figure 2. Figure 2 As shown, the work functions of the MXene-based conductive inks formed by titanium carbide and PNDIT-F3N-Br with mass ratios of 1:0, 1:0.002, 1:0.006, 1:0.01, 1:0.014, and 1:0.018 are 4.87 eV, 5.08 eV, 5.10 eV, 5.15 eV, 5.27 eV, and 5.43 eV, respectively.

[0035] The MXene-based conductive ink was placed in a vacuum drying pot filled with dry silica gel and allowed to stand until no obvious reflective surface was observed before screen printing. A 20 nm thick C10-DNTT semiconductor film was deposited at a rate of 0.1 Å / s onto a silicon substrate coated with a 300 nm thick silica layer. A MXene-based conductive ink with a specific work function was evenly coated on a screen printing stencil and then screen-printed onto the C10-DNTT semiconductor film. The printed layer on the C10-DNTT semiconductor film served as the electrode layer, designated M-F3N-Br. Electrode layers were prepared using the same method for MXene-based conductive inks with other work functions.

[0036] In other embodiments, MXene-based conductive ink is printed on an ITO substrate, a silicon substrate, a silicon dioxide substrate, and a silicon substrate coated with PET using a screen printing technique. The electrode layers obtained on different substrates are as follows: Figure 3 As shown, it is shown that the electrode layer of the present invention can be prepared on any substrate and has high universality.

[0037] (2) Performance test: Due to the weak van der Waals force between the electrode layer and the C10-DNTT semiconductor film, the gold-plated probe is placed on the electrode layer. The electrode layer can be adsorbed on the gold-plated probe without any treatment by lifting the gold-plated probe. The gold-plated probe adsorbs the electrode layer so that the electrode layer is separated from the C10-DNTT semiconductor film. The electrode layer will change its position as the gold-plated probe moves. The actual adsorption and bonding of the gold-plated probe and the electrode layer is shown in the figure below. Figure 4 As shown; two probes are respectively adsorbed with two electrode layers of the same work function on the semiconductor film of the thin film transistor to be tested, as the source electrode and drain electrode of the thin film transistor, and the electrical performance test can be carried out by pressing the gold-plated probe down and lightly touching the semiconductor film. The test schematic is shown in Figure 5 As shown, Figure 5 From bottom to top, the layers are Si gate, SiO2 dielectric layer, C 10 -DNTT semiconductor film, M-F3N-Br electrode layer, gold-plated probe (Electrode transfer).

[0038] The preparation method of the thin film transistor to be tested is as follows: a silicon substrate with a 300 nm thick silicon oxide coating is used as a substrate, and a 20 nm thick C10-DNTT organic semiconductor thin film layer is prepared by thermal evaporation.

[0039] (3) Four electrode layers with different work functions were used to test the electrical performance. The on-state current test results obtained from the different electrode layer tests are as follows: Figure 6 As shown, MXene indicates that the electrode layer is not doped with PNDIT-F3N-Br. The metal with energy level matching can reduce the contact barrier and shift Vth to the left; otherwise, it shifts to the right. Therefore, through Figure 6 The data can be used to obtain the doping amount corresponding to the optimal performance. Figure 6 As can be seen, the on-state current of the semiconductor increases with increasing PNDIT-F3N-Br doping ratios, reaching its maximum at a doping ratio of 1:0.006. Further increases in the doping ratio indicate a decrease in the on-state current. The highest on-state current corresponds to the closest match between the work function of the electrode layer and the Homo level of the semiconductor film, thus characterizing the Homo level of the semiconductor film. It is understood that other performance parameters of the thin-film transistor, such as on-off ratio, subthreshold swing, and field-effect mobility, can also be tested, depending on the characteristics of the semiconductor film.

[0040] By measuring the relationship between the transfer curve of thin film transistors and temperature at high and low temperatures and calculating the Schottky barrier between the two, we can prove the effect of the change in work function on device performance. The Schottky barrier height SBH-gate voltage V GS Curves such as Figure 7 As shown, ①②③④ represent the Schottky barrier calculation diagrams, E F Represents the Fermi level. Under the flat-band voltage (i.e., the gate voltage corresponding to ②, Flat-band condition), the Fermi levels are aligned. The barrier height at this time reflects the true value of the Schottky barrier. Figure 7 It can be seen that under the flat band voltage, when the doping ratio is 1:0.006, the Schottky barrier height is 0.017eV, which is the lowest Schottky barrier, further verifying the above-mentioned comparison results of the on-state current of the thin film transistor, proving that when the doping ratio is 1:0.006, the work function of the semiconductor film and the electrode layer is most matched; at the same time, Figure 7 It can be seen that with the increase of doping amount, the Schottky barrier continues to increase, which means that the gap between the humo energy level of the semiconductor film and the work function of the electrode layer is getting bigger and bigger.

[0041] AFM images of the C10-DNTT organic semiconductor film before placing the electrode layer, after completing the electrical performance test and removing the electrode layer using a gold-plated probe. Figure 8 As shown, from Figure 8 It can be seen that the RMS surface roughness of the semiconductor film does not change much before and after the electrical performance test using the electrode layer, indicating that the testing method of the present invention does not substantially damage the structure of the semiconductor film.

[0042] The semiconductor film performance evaluation method of the present invention can be used to evaluate the effect of a certain semiconductor film as a semiconductor layer in a field-effect transistor, and determine whether the material has semiconductor properties (for example: during the electrical performance test, when a voltage is applied between the gate and the source, the current does not increase by an order of magnitude when the voltage is large, and the device does not show a turn-on trend, indicating that the material does not have semiconductor properties). If it has semiconductor functions, the transfer output curves of electrode probes with different work functions can be tested to compare their performance differences, and then the Homo energy level position of the semiconductor film can be characterized based on the known electrode probe work function, and the performance of the semiconductor film can be evaluated based on the level of the Homo energy level.

[0043] 2. Specific embodiment of an electrode assembly for semiconductor thin film performance evaluation according to the present invention Example 2 The electrode assembly for semiconductor thin film performance evaluation in this embodiment includes two identically configured electrode layer groups, each electrode layer group consisting of six electrode layers arranged in ascending order of work function, the electrode layers being capable of being adsorbed on a probe, and the two electrode layers with the same work function in the two electrode layer groups being used as the source electrode and drain electrode of the bottom-gate top-contact thin film transistor, respectively. The six electrode layers are the electrode layers with six different work functions prepared in step (1) of Example 1, and the work functions of the six electrode layers are 4.87eV, 5.08eV, 5.10eV, 5.15eV, 5.27eV, and 5.43eV, respectively; a picture of a group of electrode layers with the same work function being adsorbed on a probe is shown in FIG. Figure 9 shown.

[0044] Finally, it should be noted that the above is only a preferred embodiment of the present invention and is not intended to limit the present invention. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art can still modify the technical solutions described in the aforementioned embodiments or make equivalent substitutions for some of the technical features therein. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A method for evaluating semiconductor thin film performance, characterized in that: The following steps are involved: MXene-based conductive inks with different work functions were made into electrode layers with different work functions. Two probes were used to adsorb two electrode layers with the same work function as the source electrode and drain electrode of the bottom-gate top-contact thin-film transistor for electrical performance testing. Electrode layers with different work functions were also used for electrical performance testing. The electrical performance measured by electrode layers with different work functions was compared, and the work function of the electrode layer corresponding to the higher electrical performance was used to characterize the Homo energy level of the semiconductor film.

2. The semiconductor thin film performance evaluation method according to claim 1, wherein: The work function of the MXene-based conductive ink ranges from 4.4 to 5.8 eV.

3. The semiconductor thin film performance evaluation method according to claim 2, wherein: The MXene-based conductive ink includes a two-dimensional MXene material and a dopant in a mass ratio of 1:(0-0.08).

4. The semiconductor thin film performance evaluation method according to claim 3, wherein: The two-dimensional MXene material is titanium carbide, and the dopant is PNDIT-F3N-Br.

5. The semiconductor thin film performance evaluation method according to claim 1, wherein: The electrode layer is prepared by a MXene-based conductive ink printing method or a coating method.

6. The semiconductor thin film performance evaluation method according to claim 5, wherein: When the electrode layer is prepared by a printing method or a coating method, the substrate is selected from one of a silicon substrate, an ITO substrate, and a silicon dioxide substrate.

7. The semiconductor thin film performance evaluation method according to claim 6, wherein: The substrate is coated with an organic semiconductor layer or an organic polymer layer.

8. The semiconductor thin film performance evaluation method according to claim 1, wherein: The electrical properties include on-state current, on / off ratio, subthreshold swing and field effect mobility.

9. An electrode assembly for evaluating semiconductor thin film performance, characterized in that: The invention comprises a plurality of electrode layers arranged with work functions from low to high. The electrode layers can be adsorbed on the probe and serve as the source electrode or drain electrode of the bottom gate top contact thin film transistor.

10. The electrode assembly for semiconductor thin film performance evaluation according to claim 9, wherein: The work function range of the electrode layer is 4.4-5.8 eV.

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