Control method of power integrated device and control module thereof

Abstract

The invention provides a control method of a power integrated device and a control module thereof. According to the control method of the power integrated device, the power integrated device comprises a first power assembly and a second power assembly, the control method comprises the steps that the load requirements of the first power assembly and the second power assembly are detected, and when it is detected that the load requirement of the first power assembly exceeds a first preset range, the second power assembly is started; or reducing the temperature level of the power integrated device by adjusting the working state of the power integrated device when it is detected that the load demand of the second power assembly exceeds the second predetermined range. According to the invention, intelligent power consumption control can be carried out on the power integrated device, so that the temperature of the power integrated device during working is reduced, over-design of components of the power integrated device is avoided, and the cost is reduced.

Description

Technical Field

[0001] The present invention relates to the field of power electronics, and in particular to a control method for a power integrated device and a control module thereof. Background Art

[0002] Power electronics play a crucial role in the efficiency and performance of electric vehicles. Components such as DC / DC converters, inverters (traction inverters), and on-board chargers (OBCs) are increasingly being integrated into single devices to save space and increase power density. At the same time, all of these devices share a single cooler to further increase power density and save costs. This can also lead to overdesign of power components—in other words, higher chip area and busbar cross-sections due to increased thermal coupling, which increases temperature levels. Specifically, if an inverter's power module has 2kW losses, this will result in a 10K increase in the cooling medium's temperature. Consequently, the components arranged in a row will experience higher temperatures, which must be compensated with increased chip area to reduce losses and remain within the chip's safety range. Temperature monitoring is only used to protect components from failure, and as vehicle development demands, each component must protect itself from overheating. Furthermore, these components are not interdependent.

[0003] Therefore, there is a need to improve the existing technology.

[0004] It should be noted that the information disclosed in the above background technology section is only used to enhance the understanding of the background of the present invention, and therefore it may contain information that does not constitute the prior art known to those skilled in the art. Summary of the Invention

[0005] In order to solve one or more of the above problems existing in the prior art, the present invention provides a control method for a power integrated device and a control module thereof.

[0006] In the control method of the power integrated device of the present invention, the above-mentioned power integrated device includes a first power component and a second power component, and the above-mentioned control method includes: detecting the load requirements of the first power component and the second power component, and when it is detected that the load requirement of the above-mentioned first power component exceeds a first predetermined range, or when it is detected that the load requirement of the above-mentioned second power component exceeds a second predetermined range, lowering the temperature level of the above-mentioned power integrated device by adjusting the working state of the power integrated device.

[0007] According to one embodiment of the present invention, the temperature of the above-mentioned power integrated device can also be detected. When it is detected that the load demand of the above-mentioned first power component exceeds the first predetermined range and the temperature of the above-mentioned power integrated device exceeds the first threshold, or when it is detected that the load demand of the above-mentioned second power component exceeds the second predetermined range and the temperature of the above-mentioned power integrated device exceeds the second threshold, the temperature of the above-mentioned power integrated device can be lowered by adjusting the working state of the above-mentioned power integrated device.

[0008] According to one embodiment of the present invention, when it is detected that the load demand of the above-mentioned first power component exceeds a first predetermined range and the temperature of the above-mentioned power integrated device exceeds a first threshold value, the temperature of the above-mentioned power integrated device can be lowered by adjusting the working state of the above-mentioned second power component; when it is detected that the load demand of the above-mentioned second power component exceeds a second predetermined range and the temperature of the above-mentioned power integrated device exceeds a second threshold value, the temperature of the above-mentioned power integrated device can be lowered by adjusting the working state of the above-mentioned first power component.

[0009] According to one embodiment of the present invention, the first power component may be a DC / DC converter component, and the second power component may be an inverter component.

[0010] According to one embodiment of the present invention, when it is detected that the load demand of the first power component exceeds a first predetermined range and the temperature of the power integrated device exceeds a first threshold, the operating state of the second power component can be adjusted to include adjusting any one or more of the following: (i) increasing the temporary gate voltage of the power switching element of the second power component to reduce the on-state resistance; (ii) reducing the switching frequency of the second power component; (iii) changing the operating mode of the second power component from a space vector pulse width modulation mode to a block commutation mode; and (iv) reducing the maximum phase current of the second power component. When it is detected that the load demand of the second power component exceeds a second predetermined range and the temperature of the power integrated device exceeds a second threshold, the operating state of the first power component can be adjusted to include adjusting any one or two of the following: (v) increasing the temporary gate voltage of the power switching element of the first power component to reduce the on-state resistance; and (vi) reducing the switching frequency of the first power component.

[0011] According to an embodiment of the present invention, priorities may be assigned to the adjustment modes (i) to (vi) respectively, and an adjustment mode may be selected according to the temperature of the power integrated device and the priorities.

[0012] The present invention also provides a control module for a power integrated device, wherein the power integrated device includes a first power component and a second power component, and the control module includes: a detection unit, which is used to detect the load demand of the first power component and the load demand of the second power component; and an adjustment unit, which is used to reduce the temperature level of the power integrated device by adjusting the working state of the power integrated device when it is detected that the load demand of the first power component exceeds a first predetermined range, or when it is detected that the load demand of the second power component exceeds a second predetermined range.

[0013] According to one embodiment of the present invention, the above-mentioned detection unit can also be used to detect the temperature of the above-mentioned power integrated device. When it is detected that the load demand of the above-mentioned first power component exceeds the first predetermined range and the temperature of the above-mentioned power integrated device exceeds the first threshold, or when it is detected that the load demand of the above-mentioned second power component exceeds the second predetermined range and the temperature of the above-mentioned power integrated device exceeds the second threshold, the adjustment unit reduces the temperature of the above-mentioned power integrated device by adjusting the working state of the above-mentioned power integrated device.

[0014] According to one embodiment of the present invention, when it is detected that the load demand of the above-mentioned first power component exceeds a first predetermined range and the temperature of the above-mentioned power integrated device exceeds a first threshold value, the above-mentioned adjustment unit can reduce the temperature of the above-mentioned power integrated device by adjusting the working state of the above-mentioned second power component; when it is detected that the load demand of the above-mentioned second power component exceeds a second predetermined range and the temperature of the above-mentioned power integrated device exceeds a second threshold value, the above-mentioned adjustment unit can reduce the temperature of the above-mentioned power integrated device by adjusting the working state of the above-mentioned first power component.

[0015] According to one embodiment of the present invention, the first power component may be a DC / DC converter component, and the second power component may be an inverter component.

[0016] According to one embodiment of the present invention, when it is detected that the load demand of the above-mentioned first power component exceeds a first predetermined range and the temperature of the above-mentioned power integrated device exceeds a first threshold, the above-mentioned adjustment unit can adjust the working state of the above-mentioned second power component including adjusting any one or more of the following methods: (i) increasing the temporary gate voltage of the power switching element of the above-mentioned second power component to reduce the on-state resistance; (ii) reducing the switching frequency of the above-mentioned second power component; (iii) changing the operation mode of the above-mentioned second power component from space vector pulse width modulation to block commutation; and (iv) reducing the maximum phase current of the above-mentioned second power component. When it is detected that the load demand of the above-mentioned second power component exceeds a second predetermined range and the temperature of the above-mentioned power integrated device exceeds a second threshold, the above-mentioned adjustment unit can adjust the working state of the above-mentioned first power component including adjusting any one or two of the following methods: (v) increasing the temporary gate voltage of the power switching element of the above-mentioned first power component to reduce the on-state resistance; and (vi) reducing the switching frequency of the above-mentioned first power component.

[0017] According to one embodiment of the present invention, the control module may further include a priority determination module, which is used to assign priorities to adjustment methods (i) to (vi) respectively, and the adjustment unit selects the adjustment method according to the temperature of the power integrated device and the priority.

[0018] By utilizing the present invention, intelligent power consumption control can be performed on a power integrated device to reduce the temperature of the power integrated device during operation, avoid over-design of components of the power integrated device, and reduce costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The above and other features of the present invention will be described in detail below with reference to specific exemplary embodiments shown in the accompanying drawings, which are given below only by way of illustration and therefore do not limit the present invention, in which:

[0020] Figure 1 FIG. 1 is a block diagram showing the structure of a power integrated device according to an embodiment of the present invention.

[0021] Figure 2 FIG. 1 is a block diagram showing the structure of a control module according to an embodiment of the present invention.

[0022] Figure 3 is a flowchart illustrating a method for controlling a power integrated device according to an embodiment of the present invention.

[0023] Figure 4 FIG. 4 is a block diagram showing the structure of a power integrated device according to another embodiment of the present invention.

[0024] Figure 5is a flowchart illustrating a method for controlling a power integrated device according to yet another embodiment of the present invention.

[0025] Description of Reference Numerals

[0026] 1 Power Integrated Devices

[0027] 11 DC / DC converter components

[0028] 12 Inverter components

[0029] 121 Power Module

[0030] 100 control module

[0031] 110 Detection Unit

[0032] 120 adjustment units

[0033] 130 Priority determination unit DETAILED DESCRIPTION

[0034] The present invention is described in detail below through specific embodiments so that those skilled in the art can easily implement the present invention according to the contents disclosed in this specification. The embodiments described below are only some embodiments of the present invention, not all. Based on the embodiments described in this specification, all other embodiments obtained by those skilled in the art without paying creative work are within the scope of protection of the present invention. It should be noted that the embodiments in this specification and the features in the embodiments can be combined with each other unless there is a conflict.

[0035] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "side", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as limiting the present invention.

[0036] In view of the problems existing in the prior art, the inventors considered adopting intelligent power consumption control to achieve the effect of over-design of components.

[0037] Specifically, the power integrated device of the present invention integrates at least a first power component and a second power component. First, the load requirements of the first and second power components of the power integrated device are detected. When the load requirement of the first power component is detected to exceed a first predetermined range, or when the load requirement of the second power component is detected to exceed a second predetermined range, the operating state of the power integrated device is adjusted to reduce the temperature of the power integrated device. This reduces the operating temperature of the power integrated device, avoids over-design of the components of the power integrated device, and reduces costs.

[0038] Furthermore, it is preferred to detect the temperature of the power integrated device. When it is detected that the load demand of the first power component exceeds a predetermined range and the temperature of the power integrated device exceeds a predetermined first threshold, or when it is detected that the load demand of the second power component exceeds a predetermined range and the temperature of the power integrated device exceeds a predetermined second threshold, the operating state of the power integrated device is adjusted to reduce the temperature of the power integrated device. In this way, more intelligent adjustment can be performed based on the actual operating temperature of the power integrated device.

[0039] Specifically, when the load demand of the first power component exceeds the predetermined range, the temperature of the power integrated device is reduced by adjusting the working state (including working parameters, etc.) of the second power component until the load demand of the first power component ends. When the load demand of the second power component exceeds the predetermined range, the temperature of the power integrated device is reduced by adjusting the working state (including working parameters, etc.) of the first power component until the load demand of the second power component ends.

[0040] It should be noted that in this specification, the temperature of the power integrated device is represented by the outlet temperature of the condensate channel used to cool the first power component and the second power component. However, the present invention is not limited to this, and other temperatures may be selected as needed to represent the operating temperature of the power integrated device.

[0041] The following combination Figures 1 to 5 , compared with the temperature effect of the prior art, to illustrate the control module and control method of the power integrated device of the present invention.

[0042] Example 1

[0043] like Figure 1 As shown, the power integrated device 1 of the embodiment 1 of the present invention integrates a DC / DC converter component 11 (i.e., a first power component) and an inverter component 12 (i.e., a second power component), wherein the inverter component 12 is provided with a power module 121. Figure 1 As shown, in this embodiment, the inverter assembly 12 and the DC / DC converter assembly 11 share a condensed water channel, and the flow direction of the condensed water is as follows: Figure 1As shown by the middle arrow, inverter assembly 12 is located upstream of the condensate channel, and DC / DC converter assembly 11 is located downstream of the condensate channel. In this specification, the inlet temperature of the condensate channel where the condensate enters power integrated device 1 is defined as T0, and the outlet temperature of the condensate leaving power integrated device 1 is defined as T1.

[0044] In addition, the control module 100 of the embodiment 1 of the present invention is as follows Figure 2 As shown, the control module 100 includes a detection unit 110 and an adjustment unit 120. The detection unit 110 may include a load detection unit for respectively detecting the load requirements of the DC / DC converter assembly 11 and the load requirements of the inverter assembly 12, and a temperature detection unit for detecting the outlet temperature T1 of the power integrated device 1. The load detection unit may be a known detection mechanism such as a load detection circuit or load detection software, or may be a mechanism that is manually or automatically triggered based on actual conditions when predetermined conditions are met. In addition, the temperature detection unit may be an NTC thermistor, PTC thermistor, etc., disposed on the substrate near the chip, or may be an integrated temperature sensor built into the chip.

[0045] When the detection unit 110 detects that the DC / DC converter assembly 11 has a high load demand (when the load demand of the DC / DC converter assembly 11 is detected to be outside a predetermined range) and the outlet temperature T1 exceeds a predetermined threshold, the adjustment unit 120 may limit the heat dissipation of the power module 121 of the inverter assembly 12 by any one or a combination of the following adjustment methods (i) to (iv):

[0046] (i) reducing the on-state resistance Rdson by increasing the temporary gate voltage of the SiC MOSFET of the inverter component 12;

[0047] (ii) reducing the switching frequency of the inverter assembly 12;

[0048] (iii) changing the operating mode of the inverter assembly 12 from space vector pulse width modulation (SVPWM) to block commutation;

[0049] (iv) The maximum phase current of the inverter assembly 12 is reduced. In this embodiment, it can be reduced from 500 A RMS to 450 A RMS.

[0050] like Figure 2As shown, the control module 100 of the present invention preferably includes a priority determination unit 130 for determining the priority of the adjustment methods. In this embodiment, the priority determination unit 130 determines the priority of adjustment methods (i) to (iv) based on the impact of each adjustment method on the power integrated device 1. That is, the priority order is: adjustment method (i) > adjustment method (ii) > adjustment method (iii) > adjustment method (iv). The adjustment unit 120 selects an adjustment method based on the detected temperature level (T1) of the power integrated device 1. The lower the temperature level, the higher the priority adjustment method is selected. The higher the temperature level, the more adjustment methods, including those with lower priorities, are selected.

[0051] The following, combined Figure 3 The control method of the power integrated device 1 of this embodiment is described in detail. It should be noted that this embodiment is a case where the power integrated device 1 is specifically applied to an electric vehicle.

[0052] First, with DC / DC converter assembly 11 charging an empty 12V battery and multiple loads connected to the 12V side, detection unit 110 detects that the load demand of DC / DC converter assembly 11 exceeds a predetermined range, and the process begins at step S11. In step S11, detection unit 110 determines whether the outlet temperature T1 of the condensate channel of power integrated device 1 is less than 60°C. If so, the process proceeds to step S12.

[0053] In step S12, it is further determined whether the outlet temperature T1 is less than 58°C. If so, the adjustment ends. If not, the process proceeds to step S121, where the adjustment unit 120 selects the highest-priority adjustment method (i), which reduces the on-state resistance Rdson by increasing the temporary gate voltage of the SiC MOSFET in the inverter assembly 12 until the DC / DC converter assembly 11 experiences a high load demand. Alternatively, if the outlet temperature T1 is above 60°C, the process proceeds to step S13.

[0054] In step S13, it is further determined whether the outlet temperature T1 is less than 65°C. If the outlet temperature T1 is less than 65°C, the adjustment unit 120 selects adjustment methods (i) to (iii) according to the priority. That is, the adjustment unit 120 reduces the on-state resistance Rdson by increasing the temporary gate voltage of the SiC MOSFET of the inverter component 12; reduces the switching frequency of the inverter component 12, from 10kHz to 8kHz in this embodiment; and changes the operating mode of the inverter component 12 from space vector pulse width modulation to block commutation, thereby reducing the outlet temperature T1. If the outlet temperature T1 is at a high temperature above 65°C, step S132 is entered.

[0055] In step S132, the control module 100 determines whether the power integrated device 1 is in the transition period from ECO mode (energy-saving mode) to sports mode. If so, the process proceeds to step S131, where the adjustment unit 120 selects adjustment methods (i) to (iii) and performs adjustment for 1 minute before proceeding to step S133. If, in step S132, the control module 100 determines that the power integrated device 1 is not in the transition period from ECO mode to sports mode, the process proceeds directly to step S133, where the adjustment unit 120 continues to select all adjustment methods (i) to (iv).

[0056] According to this embodiment, by enabling the adjustment unit 120 to select an adjustment method with a higher priority according to the temperature level, the impact on the power integrated device 1 can be minimized, thereby achieving control optimization.

[0057] In addition, it should be noted that in the present invention, the load demand of the DC / DC converter component 11, the threshold of the outlet temperature T1, the temporary gate voltage of the SiC MOSFET, the switching frequency, the adjustment time, etc. are not particularly limited and can be set according to actual conditions.

[0058] It should be noted that in this embodiment, the determination in step S132 is preferably performed when the temperature level is high. This is because if the above adjustment scheme is in energy-saving mode (ECO mode) and then switches to sports mode, high phase current is prioritized, allowing the drive system to achieve higher performance by exceeding component limitations within a limited time (1 minute in this embodiment).

[0059] Using the control method of Example 1, when the condensate channel inlet temperature T0 is 55°C, the condensate channel outlet temperature T1 can be reduced to below 58°C. In contrast, for a power integrated device 1 that does not use the control method of Example 1, under the same load requirements of the DC / DC converter assembly 11, when the condensate channel inlet temperature T0 is 55°C, the condensate channel outlet temperature T1 is set as high as 65°C. Therefore, the solution of Example 1 of the present invention can intelligently and significantly reduce the operating temperature of the power integrated device.

[0060] Example 2

[0061] This embodiment 2 follows the same logic as embodiment 1, but the arrangement order of the DC / DC converter assembly 11 and the inverter assembly 12 is different. Figure 4 As shown, in embodiment 2, the DC / DC converter assembly 11 is located on the upstream side of the condensate water channel, and the inverter assembly 12 is located on the downstream side of the condensate water channel.

[0062] When the detection unit 110 detects that the inverter assembly 12 has a high load demand (the load demand of the inverter assembly 12 exceeds a predetermined range) and the outlet temperature T1 exceeds a predetermined threshold, the adjustment unit 120 causes the DC / DC converter assembly 12 to limit its power by reducing the output current (slowing down the charging speed of the 12V battery) within a limited time. In addition, the operating temperature of the power integrated device 1 can be reduced by one or both of the following adjustment methods:

[0063] (v) increasing the temporary gate voltage of the SiC MOSFET of the DC / DC converter assembly 11 to reduce the on-state resistance;

[0064] (vi) Lowering the switching frequency of the DC / DC converter assembly 11 .

[0065] In this embodiment, the priority determination unit 130 determines the priority of adjustment methods (v) and (vi) based on their impact on the power integrated device 1. Specifically, the priority order is: adjustment method (v) > adjustment method (vi). The adjustment unit 120 prioritizes the adjustment method with the higher priority based on the detected temperature level (T1) of the power integrated device 1. Specifically, when the temperature level is low, the higher-priority adjustment method (v) is selected, while when the temperature level is high, the lower-priority adjustment method (vi) is selected.

[0066] The following, combined Figure 5 The control method of the power integrated device 1 of this embodiment is described in detail.

[0067] First, while the inverter assembly 12 is in a short-term (10 seconds in this embodiment) boost state, the detection unit 110 detects that the load demand of the inverter assembly 12 exceeds a predetermined range, and the process begins at step S21. In step S21, the detection unit 110 determines whether the outlet temperature T1 of the condensate channel of the power integrated device 1 is less than 58°C. If so, the process proceeds to step S22.

[0068] In step S22, adjustment unit 120 selects the highest-priority adjustment method (v), which reduces on-state resistance Rdson by increasing the temporary gate voltage of the SiC MOSFET in DC / DC converter assembly 11. In this embodiment, the voltage is increased from 18V to 20V until the high load demand on inverter assembly 12 ends. If outlet temperature T1 is above 58°C, the process proceeds to step S23.

[0069] In step S23, the adjustment unit 120 selects adjustment methods (v) and (vi). That is, the adjustment unit 120 reduces the on-state resistance Rdson by increasing the temporary gate voltage of the SiC MOSFET of the DC / DC converter assembly 11 and reduces the switching frequency of the DC / DC converter assembly 11, from 400 kHz to 300 kHz in this embodiment.

[0070] By enabling the adjustment unit 120 to select an adjustment method with a higher priority according to the temperature level, the impact on the power integrated device 1 can be minimized, thereby achieving control optimization.

[0071] In addition, it should be noted that in the present invention, the load demand of the inverter component 12, the threshold of the outlet temperature T1, the temporary gate voltage of the SiCMOSFET, the switching frequency of the inverter component 12, the adjustment time, etc. are not particularly limited and can be set according to actual conditions.

[0072] Using the control method of Example 2, when the condensate channel inlet temperature T0 is 55°C, the condensate channel outlet temperature T1 can be reduced to below 57°C. In contrast, for a power integrated device 1 that does not use the control method of Example 2, under the same inverter assembly 12 load requirements, when the condensate channel inlet temperature T0 is 55°C, the condensate channel outlet temperature T1 can be as high as 60°C. Therefore, the solution of Example 2 of the present invention can significantly reduce the operating temperature of the power integrated device.

[0073] It should be noted that in Embodiment 1 and Embodiment 2, when the adjustment unit 120 selects multiple adjustment methods for adjustment, the order in which the adjustment methods are performed is not particularly limited and can be performed as needed.

[0074] In summary, the technical solution according to the present invention has the following technical effects:

[0075] (1) Easy to implement;

[0076] (2) High cost-effectiveness;

[0077] (3) Reduce material costs;

[0078] (4) Enable integrated devices to have higher packaging density;

[0079] (5) The present invention is not limited to electric vehicles, but is also applicable to all power electronics applications integrating different systems in various fields (for example, medical systems, home applications, etc.).

[0080] (6) The present invention is not limited to the above semiconductor technology (SiC MOSFET, Si IGBT, GaN, etc. can be widely applied).

[0081] It is understood that the structures shown in the drawings are for illustration only and may include more or fewer modules or components than shown in the drawings, or have configurations different from those shown in the drawings. It is worth noting that when implementing the present invention using embodiments not exhaustively listed in this specification, those skilled in the art may adaptively adjust the structure, position, or functional arrangement of the relevant components.

[0082] It should be understood that, where technically feasible, the technical features listed above for different embodiments may be combined with each other to form additional embodiments within the scope of the present invention. In addition, the specific examples and embodiments described above are non-limiting, and the structures, dimensions, and materials described above may be modified accordingly without departing from the scope of protection of the present invention.

[0083] In this application, the use of disjunctive conjunctions is intended to include conjunctions. The use of definite or indefinite articles is not intended to indicate cardinality. Specifically, reference to "the" object or "a" and "an" objects is intended to indicate a possible one of a plurality of such objects. In addition, the conjunction "or" may be used to convey simultaneous features, rather than mutually exclusive solutions. In other words, the conjunction "or" should be understood to include "and / or". The term "include" is inclusive and has the same scope as "comprise".

[0084] The above embodiments, particularly any "preferred" embodiments, are possible examples of implementations and are presented merely for a clear understanding of the principles of the present invention. Many changes and modifications may be made to the above embodiments without departing substantially from the spirit and principles of the technology described herein. All modifications are intended to be included within the scope of this disclosure.

[0085] All documents mentioned in this specification are incorporated herein by reference, as if each document were incorporated herein by reference in its entirety.

[0086] In addition, it should be understood that after reading the above description of the present invention, those skilled in the art may make various changes or modifications to the present invention, and these equivalent forms also fall within the scope of protection of the present invention.

Claims

1. A control method for a power integrated device, characterized in that: The power integrated device includes a first power component and a second power component, and the control method includes: detecting load demands of the first power component and the second power component, When it is detected that the load demand of the first power component exceeds a first predetermined range, or when it is detected that the load demand of the second power component exceeds a second predetermined range, the temperature level of the power integrated device is reduced by adjusting the working state of the power integrated device.

2. The control method of a power integrated device according to claim 1, wherein: Also detecting the temperature of the power integrated device, When it is detected that the load demand of the first power component exceeds a first predetermined range and the temperature of the power integrated device exceeds a first threshold, or when it is detected that the load demand of the second power component exceeds a second predetermined range and the temperature of the power integrated device exceeds a second threshold, the temperature of the power integrated device is reduced by adjusting the working state of the power integrated device.

3. The control method of a power integrated device according to claim 2, wherein: When it is detected that the load demand of the first power component exceeds a first predetermined range and the temperature of the power integrated device exceeds a first threshold, the temperature of the power integrated device is lowered by adjusting the working state of the second power component; when it is detected that the load demand of the second power component exceeds a second predetermined range and the temperature of the power integrated device exceeds a second threshold, the temperature of the power integrated device is lowered by adjusting the working state of the first power component.

4. The control method of a power integrated device according to claim 3, characterized in that: The first power component is a DC / DC converter component, and the second power component is an inverter component.

5. The control method of a power integrated device according to claim 4, characterized in that: When it is detected that the load demand of the first power component exceeds a first predetermined range and the temperature of the power integrated device exceeds a first threshold, adjusting the working state of the second power component includes adjusting any one or more of the following: (i) increasing a temporary gate voltage of a power switch element of the second power component to reduce on-state resistance; (ii) reducing the switching frequency of the second power component; (iii) changing the operation mode of the second power component from space vector pulse width modulation to block commutation; and (iv) reducing the maximum phase current of the second power component, When it is detected that the load demand of the second power component exceeds a second predetermined range and the temperature of the power integrated device exceeds a second threshold, adjusting the working state of the first power component includes adjusting any one or both of the following methods: (v) increasing a temporary gate voltage of a power switching element of the first power component to reduce on-state resistance; and (vi) reducing the switching frequency of the first power component.

6. The control method of a power integrated device according to claim 5, characterized in that: Priorities are assigned to the adjustment methods (i) to (vi), respectively, and an adjustment method is selected based on the temperature of the power integrated device and the priorities.

7. A control module for a power integrated device, characterized in that: The power integrated device includes a first power component and a second power component, and the control module includes: a detection unit configured to detect load requirements of the first power component and the second power component; and An adjustment unit is used to reduce the temperature level of the power integrated device by adjusting the working state of the power integrated device when it is detected that the load demand of the first power component exceeds a first predetermined range, or when it is detected that the load demand of the second power component exceeds a second predetermined range.

8. The control module of the power integrated device according to claim 7, characterized in that: The detection unit is also used to detect the temperature of the power integrated device. When it is detected that the load demand of the first power component exceeds a first predetermined range and the temperature of the power integrated device exceeds a first threshold, or when it is detected that the load demand of the second power component exceeds a second predetermined range and the temperature of the power integrated device exceeds a second threshold, the adjustment unit reduces the temperature of the power integrated device by adjusting the working state of the power integrated device.

9. The control module of the power integrated device according to claim 8, characterized in that: When it is detected that the load demand of the first power component exceeds a first predetermined range and the temperature of the power integrated device exceeds a first threshold, the adjustment unit reduces the temperature of the power integrated device by adjusting the working state of the second power component; when it is detected that the load demand of the second power component exceeds a second predetermined range and the temperature of the power integrated device exceeds a second threshold, the adjustment unit reduces the temperature of the power integrated device by adjusting the working state of the first power component.

10. The control module of the power integrated device according to claim 9, characterized in that: The first power component is a DC / DC converter component, and the second power component is an inverter component.

11. The control module of the power integrated device according to claim 10, characterized in that: When it is detected that the load demand of the first power component exceeds a first predetermined range and the temperature of the power integrated device exceeds a first threshold, the adjusting unit adjusts the working state of the second power component by adjusting any one or more of the following methods: (i) increasing a temporary gate voltage of a power switch element of the second power component to reduce on-state resistance; (ii) reducing the switching frequency of the second power component; (iii) changing the operation mode of the second power component from space vector pulse width modulation to block commutation; and (iv) reducing the maximum phase current of the second power component, When it is detected that the load demand of the second power component exceeds a second predetermined range and the temperature of the power integrated device exceeds a second threshold, the adjusting unit adjusts the working state of the first power component by adjusting any one or both of the following methods: (v) increasing a temporary gate voltage of a power switching element of the first power component to reduce on-state resistance; and (vi) reducing the switching frequency of the first power component.

12. The control module of the power integrated device according to claim 11, characterized in that: The control module further includes a priority determination module, which is used to assign priorities to adjustment methods (i) to (vi) respectively. The adjustment unit selects an adjustment method according to the temperature of the power integrated device and the priority.

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