Semiconductor device and vehicle

Abstract

This semiconductor device is provided with: a first conductive layer; a first semiconductor element bonded to one side of the first conductive layer in the first direction; a first power terminal electrically connected to the first conductive layer and the first semiconductor element; a first sealing resin covering the first conductive layer and the first semiconductor element; and a first expansion terminal in conductive engagement with the first power terminal. The first power terminal has a first exposed portion exposed from the first sealing resin. The first expansion terminal is conductively engaged with the first exposed portion.

Description

Technical Field

[0001] The present disclosure relates to a semiconductor device and a vehicle equipped with the semiconductor device. Background Art

[0002] Semiconductor devices equipped with switching semiconductor elements (such as MOSFETs and IGBTs) are widely known and are primarily used for power conversion. Patent Document 1 discloses an example of such a semiconductor device. The semiconductor device disclosed in this document includes: a first wiring layer; a first semiconductor element conductively bonded to the first wiring layer; a second terminal conductively connected to the first wiring layer; and a sealing resin covering the first wiring layer and the first semiconductor element. The second terminal is exposed from the sealing resin.

[0003] In the semiconductor device disclosed in Patent Document 1, the portion of the second terminal exposed from the sealing resin is used for external connection to a DC power supply, etc. Preferably, the size and shape of the portion of the second terminal exposed from the sealing resin can be freely set according to the usage of the semiconductor device.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Laid-Open No. 2022-53801 Summary of the Invention

[0007] Problems to be solved by the invention

[0008] One object of the present disclosure is to provide a semiconductor device that is improved over conventional semiconductor devices and a vehicle equipped with the semiconductor device. In particular, in view of the above-mentioned circumstances, one object of the present disclosure is to provide a semiconductor device that can increase the degree of freedom of external connection of power terminals and a vehicle equipped with the semiconductor device.

[0009] Solutions to Problems

[0010] A semiconductor device provided by a first aspect of the present disclosure includes: a first conductive layer; a first semiconductor element bonded to one side of the first conductive layer in a first direction; a first power terminal electrically connected to the first conductive layer and the first semiconductor element; a first sealing resin covering the first semiconductor element and the first conductive layer; and a first extension terminal electrically conductively bonded to the first power terminal. The first power terminal has a first exposed portion exposed to the outside from the first sealing resin. The first extension terminal is electrically conductively bonded to the first exposed portion.

[0011] A semiconductor device provided by a second aspect of the present disclosure includes: a first conductive layer; a first semiconductor element bonded to one side of the first conductive layer in a first direction; a first power terminal electrically connected to the first conductive layer and the first semiconductor element; and a first sealing resin covering the first semiconductor element and the first conductive layer. The first power terminal has a first exposed portion exposed to the outside from the first sealing resin. A first engaging portion is provided on the first exposed portion.

[0012] The vehicle provided by the third embodiment of the present disclosure includes a drive source and a semiconductor device. Compared to the semiconductor device provided by the first embodiment of the present disclosure, the semiconductor device includes: a second power terminal; a second extension terminal conductively bonded to the second power terminal; a third power terminal; and a third extension terminal conductively bonded to the third power terminal. The semiconductor device further includes: a second semiconductor element; and a second conductive layer conductively bonded to the second semiconductor element. The first semiconductor element is conductively bonded to the first conductive layer. The second power terminal is conductively connected to the second semiconductor element. The third power terminal is conductively connected to the second conductive layer. The first sealing resin covers the second semiconductor element and the second conductive layer.

[0013] Effects of the Invention

[0014] According to the above structure, it is possible to increase the degree of freedom of external connection of the power terminal.

[0015] Other features and advantages of the present disclosure will become more apparent from the following detailed description based on the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a perspective view of the semiconductor device according to the first embodiment of the present disclosure.

[0017] Figure 2 yes Figure 1 A top view of the semiconductor device is shown.

[0018] Figure 3 is with Figure 2 The corresponding top view shows the first sealing resin through the lens.

[0019] Figure 4 yes Figure 3 A partial enlarged view of .

[0020] Figure 5 is with Figure 2 In the corresponding top view, the first conductive member is shown through, and the first extended terminal, the two second extended terminals 72 , the third extended terminal, the first sealing resin, and the second conductive member are omitted from illustration.

[0021] Figure 6 yes Figure 1 Right side view of the semiconductor device shown.

[0022] Figure 7 yes Figure 1 A bottom view of the semiconductor device is shown.

[0023] Figure 8 It is along Figure 3 A cross-sectional view taken along line VIII-VIII.

[0024] Figure 9 It is along Figure 3 A cross-sectional view taken along line IX-IX.

[0025] Figure 10 yes Figure 9 A partial enlarged view of the first element and its surroundings is shown.

[0026] Figure 11 yes Figure 9 A partial enlarged view of the second element and its surroundings is shown.

[0027] Figure 12 It is along Figure 3 A cross-sectional view taken along line XII-XII.

[0028] Figure 13 It is along Figure 3 A cross-sectional view taken along line XIII-XIII.

[0029] Figure 14 yes Figure 2 A partial enlarged view of .

[0030] Figure 15 It is along Figure 14 Cross-sectional view along line XV-XV.

[0031] Figure 16 It is along Figure 14 Cross-sectional view along line XVI-XVI.

[0032] Figure 17 This is a partially enlarged plan view of a semiconductor device according to a first modification of the first embodiment of the present disclosure.

[0033] Figure 18 It is along Figure 17 A cross-sectional view taken along line XVIII-XVIII.

[0034] Figure 19 This is a partially enlarged plan view of a semiconductor device according to a second modified example of the first embodiment of the present disclosure.

[0035] Figure 20 It is along Figure 19 Cross-sectional view of line XX-XX.

[0036] Figure 21 It is along Figure 19 Cross-sectional view of line XXI-XXI.

[0037] Figure 22 This is a partially enlarged plan view of a semiconductor device according to a third modified example of the first embodiment of the present disclosure.

[0038] Figure 23 It is along Figure 22 A cross-sectional view taken along line XXIII-XXIII.

[0039] Figure 24 It is equipped with Figure 1 A schematic diagram of a vehicle showing a semiconductor device.

[0040] Figure 25 It is a top view of a semiconductor device according to a second embodiment of the present disclosure.

[0041] Figure 26 yes Figure 25 Right side view of the semiconductor device shown.

[0042] Figure 27 It is a top view of a semiconductor device according to a third embodiment of the present disclosure.

[0043] Figure 28 yes Figure 27 Right side view of the semiconductor device shown.

[0044] Figure 29 It is along Figure 27 Cross-sectional view of line XXIX-XXIX.

[0045] Figure 30 It is a top view of a semiconductor device according to a fourth embodiment of the present disclosure.

[0046] Figure 31 yes Figure 30 Right side view of the semiconductor device shown.

[0047] Figure 32 It is along Figure 30 A cross-sectional view of line XXXII-XXXII.

[0048] Figure 33 It is a top view of a semiconductor device according to a fifth embodiment of the present disclosure.

[0049] Figure 34 It is along Figure 33 A cross-sectional view taken along line XXXIV-XXXIV.

[0050] Figure 35 It is a top view of a semiconductor device according to a sixth embodiment of the present disclosure.

[0051] Figure 36 yes Figure 35 Right side view of the semiconductor device shown. DETAILED DESCRIPTION

[0052] Modes for implementing the present disclosure will be described based on the drawings.

[0053] First embodiment:

[0054] based on Figures 1 to 16 , a semiconductor device A10 according to the first embodiment of the present disclosure is described. The semiconductor device A10 includes a first conductive layer 121, a second conductive layer 122, a first power terminal 13, two second power terminals 14, two third power terminals 15, a plurality of semiconductor elements 20, a first conductive component 31, a second conductive component 32, a first sealing resin 50, a first extension terminal 71, two second extension terminals 72, and a third extension terminal 73. The semiconductor device A10 also includes a substrate 11, a first signal terminal 161, a second signal terminal 162, a third signal terminal 171, a fourth signal terminal 172, two fifth signal terminals 181, two sixth signal terminals 182, a seventh signal terminal 191, two thermistors 23, a first wiring 61, and a second wiring 62. Among them, in Figure 3 as well as Figure 4 In the figure, the first sealing resin 50 is shown for easier understanding. Figure 3 In FIG, the first sealing resin 50 that is transmitted is indicated by an imaginary line (two-dot chain line). Figure 5 In the figure, for easier understanding, the first conductive member 31 is shown transparently, and the first extended terminal 71 , the two second extended terminals 72 , the third extended terminal 73 , the first sealing resin 50 , and the second conductive member 32 are omitted.

[0055] In the description of semiconductor device A10, for convenience, the direction normal to first principal surface 121A of first conductive layer 121, described later, is referred to as "first direction z." An example of a direction orthogonal to first direction z is referred to as "second direction x." A direction orthogonal to first direction z and second direction x is referred to as "third direction y."

[0056] Semiconductor device A10 converts DC power input to first power terminal 13 and two second power terminals 14 into AC power using multiple semiconductor elements 20. The converted AC power is input from two third power terminals 15 to power supply targets such as motors.

[0057] like Figures 9 to 11As shown, the substrate 11 is located on the side opposite to the plurality of semiconductor elements 20 with the first conductive layer 121 and the second conductive layer 122 as reference in the first direction z. The substrate 11 supports the first conductive layer 121 and the second conductive layer 122. In the semiconductor device A10, the substrate 11 is formed of a DBC (Direct Bonded Copper) substrate. Figures 9 to 11 As shown, the base material 11 includes an insulating layer 111, two intermediate layers 112, and a heat dissipation layer 113. The base material 11 is covered with a first sealing resin 50 except for a portion of the heat dissipation layer 113.

[0058] like Figures 9 to 11 As shown, insulating layer 111 includes a portion located between intermediate layer 112 and heat dissipation layer 113 in a first direction z. Insulating layer 111 is made of a material with relatively high thermal conductivity. Insulating layer 111 is made of, for example, a ceramic including aluminum nitride (AlN). Besides ceramic, insulating layer 111 may also be made of an insulating resin sheet. The dimension of insulating layer 111 in the first direction z is smaller than the dimensions of first conductive layer 121 and second conductive layer 122 in the first direction z.

[0059] like Figures 9 to 11 As shown, the two intermediate layers 112 may be located between the insulating layer 111 and the first conductive layer 121 and the second conductive layer 122 in the first direction z. The intermediate layers 112 are separated from each other in the second direction x. The intermediate layers 112 may include copper (Cu). Figure 5 As shown, viewed in the first direction z, the intermediate layer 112 is surrounded by the periphery of the insulating layer 111 .

[0060] like Figures 9 to 11 As shown, the heat dissipation layer 113 is located on the side opposite to the two intermediate layers 112 in the first direction z with the insulating layer 111 as a reference. Figure 7 As shown, the heat dissipation layer 113 is exposed from the first sealing resin 50. The heat dissipation layer 113 is composed of copper. The dimension of the heat dissipation layer 113 in the first direction z is larger than the dimension of the insulating layer 111 in the first direction z. When viewed in the first direction z, the heat dissipation layer 113 is surrounded by the periphery of the insulating layer 111.

[0061] like Figures 9 to 11 As shown, the first conductive layer 121 and the second conductive layer 122 are bonded to the substrate 11. The first conductive layer 121 and the second conductive layer 122 are composed of copper. The first conductive layer 121 and the second conductive layer 122 are separated from each other in the second direction x. Figure 8 as well as Figure 9 As shown, the first conductive layer 121 has a first main surface 121A facing the first direction z. The first main surface 121A faces the plurality of semiconductor elements 20. Figure 10As shown, the first conductive layer 121 is bonded to one of the two intermediate layers 112 via a first bonding layer 129. The first bonding layer 129 is, for example, solder. Figure 8 as well as Figure 9 As shown, the second conductive layer 122 has a second main surface 122A facing the same side as the first main surface 121A in the first direction z. Figure 11 As shown, the second conductive layer 122 is bonded to the other of the two intermediate layers 112 via a first bonding layer 129 .

[0062] like Figure 5 as well as Figure 9 As shown, the plurality of semiconductor elements 20 are respectively mounted on either the first conductive layer 121 or the second conductive layer 122. The plurality of semiconductor elements 20 are, for example, MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors). Furthermore, the plurality of semiconductor elements 20 may also be switching elements such as IGBTs (Insulated Gate Bipolar Transistors) or diodes. In the description of the semiconductor device A10, the plurality of semiconductor elements 20 are n-channel MOSFETs with a vertical structure. The plurality of semiconductor elements 20 include a compound semiconductor substrate. The compound semiconductor substrate is composed of silicon carbide (SiC).

[0063] like Figure 5 As shown, in semiconductor device A10, the plurality of semiconductor elements 20 include a plurality of first semiconductor elements 21 and a plurality of second semiconductor elements 22. The structure of each of the plurality of second semiconductor elements 22 is the same as that of each of the plurality of first semiconductor elements 21. The plurality of first semiconductor elements 21 are mounted on the first main surface 121A of the first conductive layer 121. The plurality of first semiconductor elements 21 are arranged along the third direction y. The plurality of second semiconductor elements 22 are mounted on the second main surface 122A of the second conductive layer 122. The plurality of second semiconductor elements 22 are arranged along the third direction y.

[0064] like Figure 5 as well as Figure 10 As shown, the plurality of first semiconductor elements 21 respectively include a first electrode 211 , a second electrode 212 , a first gate electrode 213 , and a first detection electrode 214 .

[0065] like Figure 10As shown, the first electrode 211 is opposed to the first main surface 121A of the first conductive layer 121. A current corresponding to the power before conversion by the first semiconductor element 21 flows through the first electrode 211. That is, the first electrode 211 serves as the drain electrode of the first semiconductor element 21. The first electrode 211 is conductively bonded to the first main surface 121A via the conductive bonding layer 29. Thus, the first electrode 211 of each of the plurality of first semiconductor elements 21 is electrically connected to the first conductive layer 121. The conductive bonding layer 29 is a calcined metal such as silver (Ag). Alternatively, the conductive bonding layer 29 may be solder.

[0066] like Figure 10 As shown, the second electrode 212 is located on the opposite side of the first conductive layer 121 in the first direction z from the first main surface 121A. Therefore, the first electrode 211 and the second electrode 212 are located on opposite sides of each other in the first direction z. A current corresponding to the power converted by the first semiconductor element 21 flows through the second electrode 212. In other words, the second electrode 212 serves as the source electrode of the first semiconductor element 21.

[0067] like Figure 10 As shown, the first gate electrode 213 is located on the opposite side of the first main surface 121A of the first conductive layer 121 in the first direction z. Therefore, the first gate electrode 213 is located on the same side as the second electrode 212 in the first direction z. A gate voltage for driving the first semiconductor element 21 is applied to the first gate electrode 213. Figure 5 As shown, when viewed along the first direction z, the area of the first gate electrode 213 is smaller than the area of the second electrode 212 .

[0068] like Figure 5 As shown, the first detection electrode 214 is located on the same side as the second electrode 212 and the first gate electrode 213 in the first direction z. The first detection electrode 214 is located next to the first gate electrode 213 in the third direction y. A voltage equivalent to the voltage applied to the second electrode 212 is applied to the first detection electrode 214. When viewed in the first direction z, the area of the first detection electrode 214 is approximately equal to the area of the first gate electrode 213.

[0069] like Figure 5 as well as Figure 11 As shown, the plurality of second semiconductor elements 22 respectively include a third electrode 221 , a fourth electrode 222 , a second gate electrode 223 and a second detection electrode 224 .

[0070] like Figure 11As shown, the third electrode 221 faces the second main surface 122A of the second conductive layer 122. A current corresponding to the power before conversion by the second semiconductor element 22 flows through the third electrode 221. In other words, the third electrode 221 serves as the drain electrode of the second semiconductor element 22. The third electrode 221 is conductively bonded to the second main surface 122A via the conductive bonding layer 29. This ensures electrical continuity between the third electrode 221 of each of the plurality of second semiconductor elements 22 and the second conductive layer 122.

[0071] like Figure 11 As shown, the fourth electrode 222 is located on the opposite side of the second conductive layer 122 in the first direction z from the second main surface 122A. Therefore, the third electrode 221 and the fourth electrode 222 are located on opposite sides of each other in the first direction z. A current corresponding to the power converted by the second semiconductor element 22 flows through the fourth electrode 222. In other words, the fourth electrode 222 serves as the source electrode of the second semiconductor element 22.

[0072] like Figure 11 As shown, the second gate electrode 223 is located on the opposite side of the second main surface 122A of the second conductive layer 122 in the first direction z. Therefore, the second gate electrode 223 is located on the same side as the fourth electrode 222 in the first direction z. A gate voltage for driving the second semiconductor element 22 is applied to the second gate electrode 223. Figure 5 As shown, when viewed in the first direction z, the area of the second gate electrode 223 is smaller than the area of the fourth electrode 222 .

[0073] like Figure 5 As shown, the second detection electrode 224 is located on the same side as the fourth electrode 222 and the second gate electrode 223 in the first direction z. The second detection electrode 224 is located on both sides of the second gate electrode 223 in the third direction y. A voltage equivalent to the voltage applied to the fourth electrode 222 is applied to the second detection electrode 224. When viewed in the first direction z, the area of the second detection electrode 224 is approximately equal to the area of the second gate electrode 223.

[0074] like Figure 3 as well as Figure 9 As shown, the first power terminal 13 is located on the side opposite to the second conductive layer 122 with the first conductive layer 121 as a reference in the second direction x. The first power terminal 13 is conductively bonded to the first conductive layer 121. Thus, the first power terminal 13 is electrically connected to the first electrodes 211 of each of the plurality of first semiconductor elements 21 via the first conductive layer 121. The first power terminal 13 is a P-terminal (positive electrode) for inputting DC power that becomes the object of power conversion. The first power terminal 13 extends from the first conductive layer 121 along the second direction x. The first power terminal 13 has a first covering portion 131 and a first exposed portion 132. As shown Figure 9As shown, the first covering portion 131 is electrically bonded to the first conductive layer 121 and is covered by the first sealing resin 50. The first covering portion 131 is aligned with the first main surface 121A of the first conductive layer 121. The first exposed portion 132 extends from the first covering portion 131 in the second direction x and is exposed to the outside from the first sealing resin 50.

[0075] like Figure 3 as well as Figure 8 As shown, the two second power terminals 14 are respectively located on the same side as the first power terminal 13 with the first conductive layer 121 and the second conductive layer 122 as references in the second direction x, and are separated from the first conductive layer 121 and the second conductive layer 122. The two second power terminals 14 are respectively connected to the fourth electrodes 222 of the plurality of second semiconductor elements 22. The two second power terminals 14 are N terminals (negative poles) to which DC power is input as the object of power conversion. The second power terminals 14 are separated from each other in the third direction y. The first power terminal 13 is located between the two second power terminals 14 in the third direction y. The two second power terminals 14 respectively have a second covering portion 141 and a second exposed portion 142. As shown Figure 8 As shown, the second covering portion 141 is separated from the first conductive layer 121 and is covered by the first sealing resin 50. The second exposed portion 142 extends from the second covering portion 141 in the second direction x and is exposed from the first sealing resin 50 to the outside.

[0076] like Figure 3 as well as Figure 8 As shown, the two third power terminals 15 are respectively located on the side opposite to the first conductive layer 121 with the second conductive layer 122 as a reference in the second direction x. The two third power terminals 15 are respectively conductively bonded to the second conductive layer 122. Thus, the two third power terminals 15 are respectively conductively connected to the third electrodes 221 of the plurality of second semiconductor elements 22 via the second conductive layer 122. The AC power converted by the plurality of semiconductor elements 20 is respectively output from the two third power terminals 15. In the semiconductor device A10, the two third power terminals 15 are separated from each other in the third direction y. The two third power terminals 15 respectively have a third covering portion 151 and a third exposed portion 152. As shown Figure 8 As shown, the third covering portion 151 is electrically bonded to the second conductive layer 122 and is covered by the first sealing resin 50. The third covering portion 151 is aligned with the second main surface 122A of the second conductive layer 122. The third exposed portion 152 extends from the third covering portion 151 in the second direction x and is exposed to the outside from the first sealing resin 50.

[0077] like Figure 10As shown, the first wiring 61 is bonded to the first main surface 121A of the first conductive layer 121. The first wiring 61 is located on the side opposite to the second semiconductor elements 22 with respect to the first semiconductor elements 21 in the second direction x. The first wiring 61 is electrically connected to the first semiconductor elements 21 and the first conductive layer 121. Figure 5 as well as Figure 10 As shown, the first wiring 61 includes a first mounting layer 611 , a first metal layer 612 , two first gate wiring layers 613 , a first detection wiring layer 614 , a first temperature detection wiring layer 615 , and a second detection wiring layer 616 .

[0078] like Figure 5 As shown, the first carrier layer 611 carries two first gate wiring layers 613, a first detection wiring layer 614, two first temperature detection wiring layers 615, and a second detection wiring layer 616. The first carrier layer 611 is an insulator. The first carrier layer 611 is made of, for example, ceramic. Alternatively, the first carrier layer 611 may be made of an insulating resin sheet.

[0079] like Figure 10 As shown, the first metal layer 612 is located on the side of the first conductive layer 121 opposite the first main surface 121A, relative to the first mounting layer 611, in the first direction z. The first metal layer 612 is bonded to the first mounting layer 611. The first metal layer 612 is composed of copper. The first metal layer 612 is bonded to the first main surface 121A via the second bonding layer 68. The second bonding layer 68 is, for example, solder.

[0080] like Figure 5 as well as Figure 10 As shown, the two first gate wiring layers 613 are located on the opposite side of the first metal layer 612 relative to the first mounting layer 611. The two first gate wiring layers 613 are bonded to the first mounting layer 611. Multiple first wires 41 are conductively bonded to one of the two first gate wiring layers 613. The multiple first wires 41 are individually conductively bonded to the first gate electrodes 213 of each of the multiple first semiconductor elements 21. Furthermore, multiple sixth wires 46 are conductively bonded to each of the two first gate wiring layers 613. Thus, the two first gate wiring layers 613 are electrically connected to the first gate electrodes 213 of each of the multiple first semiconductor elements 21.

[0081] like Figure 5 as well as Figure 10As shown, the first detection wiring layer 614 is located on the opposite side of the first metal layer 612 relative to the first mounting layer 611. The first detection wiring layer 614 is bonded to the first mounting layer 611. A plurality of second wires 42 are conductively bonded to the first detection wiring layer 614. Furthermore, the plurality of second wires 42 are individually conductively bonded to the first detection electrodes 214 of each of the plurality of first semiconductor elements 21. As a result, the first detection wiring layer 614 is electrically connected to the first detection electrodes 214 of each of the plurality of first semiconductor elements 21.

[0082] like Figure 5 As shown, the two first temperature detection wiring layers 615 are located on the opposite side of the first metal layer 612 with respect to the first mounting layer 611. The two first temperature detection wiring layers 615 are bonded to the first mounting layer 611. The two first temperature detection wiring layers 615 are adjacent to each other in the third direction y.

[0083] like Figure 5 As shown, the second detection wiring layer 616 is located on the opposite side of the first metal layer 612 relative to the first mounting layer 611. The second detection wiring layer 616 is bonded to the first mounting layer 611. The third wire 43 is conductively bonded to the second detection wiring layer 616. Furthermore, the third wire 43 is conductively bonded to the first main surface 121A of the first conductive layer 121. Thus, the second detection wiring layer 616 is electrically connected to the first conductive layer 121.

[0084] like Figure 11 As shown, the second wiring 62 is bonded to the second main surface 122A of the second conductive layer 122. The second wiring 62 is located on the side opposite to the plurality of first semiconductor elements 21 with respect to the plurality of second semiconductor elements 22 in the second direction x. The second wiring 62 is electrically connected to the plurality of second semiconductor elements 22 and the second conductive layer 122. Figure 5 as well as Figure 11 As shown, the second wiring 62 includes a second mounting layer 621 , a second metal layer 622 , two second gate wiring layers 623 , a third detection wiring layer 624 , two second temperature detection wiring layers 625 , and a fourth detection wiring layer 626 .

[0085] like Figure 5 As shown, the second carrier layer 621 carries two second gate wiring layers 623, a third detection wiring layer 624, two second temperature detection wiring layers 625, and a fourth detection wiring layer 626. The second carrier layer 621 is an insulator. The second carrier layer 621 is made of, for example, ceramic. Alternatively, the second carrier layer 621 may be made of an insulating resin sheet.

[0086] like Figure 11As shown, the second metal layer 622 is located on the side of the second conductive layer 122 opposite the second main surface 122A with respect to the second mounting layer 621 in the first direction z. The second metal layer 622 is bonded to the second mounting layer 621. The second metal layer 622 is composed of copper. The second metal layer 622 is bonded to the second main surface 122A via the second bonding layer 68.

[0087] like Figure 5 as well as Figure 11 As shown, the two second gate wiring layers 623 are located on the opposite side of the second metal layer 622 relative to the second mounting layer 621. The two second gate wiring layers 623 are bonded to the second mounting layer 621. A plurality of fourth wires 44 are conductively bonded to one of the two second gate wiring layers 623. The plurality of fourth wires 44 are individually conductively bonded to the second gate electrodes 223 of each of the plurality of second semiconductor elements 22. Furthermore, a plurality of seventh wires 47 are conductively bonded to each of the two second gate wiring layers 623. Thus, the two second gate wiring layers 623 are electrically connected to the second gate electrodes 223 of each of the plurality of second semiconductor elements 22.

[0088] like Figure 5 as well as Figure 11 As shown, the third detection wiring layer 624 is located on the opposite side of the second metal layer 622 relative to the second mounting layer 621. The third detection wiring layer 624 is bonded to the second mounting layer 621. A plurality of fifth wires 45 are conductively bonded to the third detection wiring layer 624. Furthermore, the plurality of fifth wires 45 are individually conductively bonded to the second detection electrodes 224 of each of the plurality of second semiconductor elements 22. This provides electrical continuity between the third detection wiring layer 624 and the second detection electrodes 224 of each of the plurality of second semiconductor elements 22.

[0089] like Figure 5 As shown, the two second temperature detection wiring layers 625 are located on the opposite side of the second metal layer 622 with respect to the second mounting layer 621. The two second temperature detection wiring layers 625 are bonded to the second mounting layer 621. The two second temperature detection wiring layers 625 are adjacent to each other in the third direction y.

[0090] like Figure 5 As shown, the fourth detection wiring layer 626 is located on the opposite side of the second metal layer 622 with respect to the second mounting layer 621. The fourth detection wiring layer 626 is bonded to the second mounting layer 621.

[0091] like Figure 10 as well as Figure 11As shown, the plurality of sleeves 63 are electrically connected to any one of the first wiring 61 and the second wiring 62 via the third bonding layer 69. The third bonding layer 69 is, for example, solder. The plurality of sleeves 63 are made of conductive materials such as metal. The plurality of sleeves 63 are cylindrical and extend along the first direction z. Figure 2 as well as Figure 9 As shown, each of the plurality of sleeves 63 has an end surface 631 facing the same side as the first principal surface 121A of the first conductive layer 121 in the first direction z. The end surface 631 is exposed to the outside from the top surface 51 of the first sealing resin 50 described later. The third bonding layer 69 is, for example, solder.

[0092] like Figure 4 As shown, one of the two thermistors 23 is conductively bonded to the two first temperature detection wiring layers 615 of the first wiring 61. Figure 4 As shown, the other of the two thermistors 23 is conductively bonded to the two second temperature detection wiring layers 625 of the second wiring 62. The two thermistors 23 are used as temperature detection sensors of the semiconductor device A10.

[0093] like Figure 1 As shown, the first signal terminal 161, the second signal terminal 162, the third signal terminal 171, the fourth signal terminal 172, the two fifth signal terminals 181, the two sixth signal terminals 182, and the seventh signal terminal 191 are formed of metal pins extending in the first direction z. These terminals protrude from the top surface 51 of the first sealing resin 50, described later. Furthermore, these terminals are press-fitted into a plurality of sleeves 63. As a result, these terminals are supported by one of the plurality of sleeves 63 and are electrically connected to one of the first wiring 61 and the second wiring 62.

[0094] like Figure 5 as well as Figure 10 As shown, the first signal terminal 161 is press-fitted into a sleeve 63 that is electrically bonded to one of the two first gate wiring layers 613 of the first wiring 61 in the plurality of sleeves 63. As a result, the first signal terminal 161 is electrically connected to the first gate electrodes 213 of each of the plurality of first semiconductor elements 21 via the two first gate wiring layers 613. A gate voltage for driving the plurality of first semiconductor elements 21 is applied to the first signal terminal 161.

[0095] like Figure 5 as well as Figure 11As shown, the second signal terminal 162 is press-fitted into the sleeve 63, which is electrically bonded to one of the two second gate wiring layers 623 of the second wiring 62 in the plurality of sleeves 63. As a result, the second signal terminal 162 is electrically connected to the second gate electrode 223 of each of the plurality of second semiconductor elements 22 via the two second gate wiring layers 623. A gate voltage for driving the plurality of second semiconductor elements 22 is applied to the second signal terminal 162.

[0096] like Figure 2 As shown, the third signal terminal 171 is located next to the first signal terminal 161 in the third direction y. Figure 5 As shown, the third signal terminal 171 is press-fitted into a sleeve 63, one of the plurality of sleeves 63, that is conductively bonded to the first detection wiring layer 614 of the first wiring 61. As a result, the third signal terminal 171 is electrically connected to the first detection electrodes 214 of each of the plurality of first semiconductor elements 21 via the first detection wiring layer 614. A voltage equivalent to the voltage applied to the first detection electrodes 214 of each of the plurality of first semiconductor elements 21 is applied to the third signal terminal 171.

[0097] like Figure 2 As shown, the fourth signal terminal 172 is located next to the second signal terminal 162 in the third direction y. Figure 5 As shown, the fourth signal terminal 172 is press-fitted into a sleeve 63, one of the plurality of sleeves 63, that is conductively bonded to the third detection wiring layer 624 of the second wiring 62. As a result, the fourth signal terminal 172 is electrically connected to the second detection electrodes 224 of each of the plurality of second semiconductor elements 22 via the third detection wiring layer 624. A voltage equivalent to the voltage applied to the second detection electrodes 224 of each of the plurality of second semiconductor elements 22 is applied to the fourth signal terminal 172.

[0098] like Figure 2 As shown, the two fifth signal terminals 181 are located on the side opposite to the third signal terminal 171 with the first signal terminal 161 as a reference in the third direction y. The two fifth signal terminals 181 are adjacent to each other in the third direction y. Figure 5 As shown, the two fifth signal terminals 181 are press-fitted into two sleeves 63, respectively, among the plurality of sleeves 63, which are respectively conductively bonded to the two first temperature detection wiring layers 615 of the first wiring 61. As a result, the two fifth signal terminals 181 are electrically connected to the thermistors 23, among the two thermistors 23, which are conductively bonded to the two first temperature detection wiring layers 615.

[0099] like Figure 2 As shown, the two sixth signal terminals 182 are located on the side opposite to the fourth signal terminal 172 with the second signal terminal 162 as a reference in the third direction y. The two sixth signal terminals 182 are adjacent to each other in the third direction y. Figure 5As shown, the two sixth signal terminals 182 are press-fitted into two sleeves 63, respectively, among the plurality of sleeves 63, which are respectively conductively bonded to the two second temperature detection wiring layers 625 of the second wiring 62. As a result, the two sixth signal terminals 182 are electrically connected to the thermistors 23, among the two thermistors 23, which are conductively bonded to the two second temperature detection wiring layers 625.

[0100] like Figure 2 As shown, the seventh signal terminal 191 is located on the side opposite to the first signal terminal 161 with respect to the third signal terminal 171 in the third direction y. Figure 5 As shown, the seventh signal terminal 191 is press-fitted into a sleeve 63, one of the plurality of sleeves 63, which is conductively bonded to the second detection wiring layer 616 of the first wiring 61. As a result, the seventh signal terminal 191 is electrically connected to the first conductive layer 121 via the second detection wiring layer 616. A voltage equivalent to the DC power input to the first power terminal 13 and the two second power terminals 14 is applied to the seventh signal terminal 191.

[0101] like Figure 5 as well as Figure 10 As shown, the first conductive component 31 is electrically connected to the second electrodes 212 of the plurality of first semiconductor elements 21 and the second main surface 122A of the second conductive layer 122. As a result, the second electrodes 212 of the plurality of first semiconductor elements 21 are electrically connected to the second conductive layer 122. The first conductive component 31 is composed of copper. The first conductive component 31 is a metal clip. Figure 5 As shown, the first conductive component 31 includes a main body portion 311 , a plurality of first bonding portions 312 , a plurality of first connecting portions 313 , a second bonding portion 314 , and a second connecting portion 315 .

[0102] The main body 311 constitutes the main part of the first conductive component 31. Figure 5 As shown, the main body 311 extends in the third direction y. Figure 9 As shown, the main body portion 311 spans between the first conductive layer 121 and the second conductive layer 122 .

[0103] like Figure 10 As shown, the plurality of first bonding portions 312 are bonded to the second electrodes 212 of the plurality of first semiconductor elements 21 , respectively. The plurality of first bonding portions 312 are opposed to any one of the second electrodes 212 of the plurality of first semiconductor elements 21 .

[0104] like Figure 5 As shown, the plurality of first connecting parts 313 are connected to the main body 311 and the plurality of first joint parts 312. The plurality of first connecting parts 313 are separated from each other in the third direction y. Figure 9As shown, when viewed in the third direction y, the first connecting portions 313 are inclined in a direction away from the first main surface 121A of the first conductive layer 121 as they move from the first bonding portions 312 toward the main body 311 .

[0105] like Figure 5 as well as Figure 9 As shown, the second bonding portion 314 is bonded to the second main surface 122A of the second conductive layer 122. The second bonding portion 314 is opposite to the second main surface 122A. The second bonding portion 314 extends in the third direction y. The dimension of the second bonding portion 314 in the third direction y is equal to the dimension of the main body 311 in the third direction y.

[0106] like Figure 5 as well as Figure 9 As shown, the second connecting portion 315 is connected to the main body 311 and the second bonding portion 314. When viewed in the third direction y, the second connecting portion 315 is inclined so as to move away from the second main surface 122A of the second conductive layer 122 as it moves from the second bonding portion 314 toward the main body 311. The dimension of the second connecting portion 315 in the third direction y is equal to the dimension of the main body 311 in the third direction y.

[0107] like Figure 9 、 Figure 10 as well as Figure 13 As shown, the conductive bonding layer 29 is located between the second electrodes 212 of each of the plurality of first semiconductor elements 21 and each of the plurality of first bonding portions 312. The conductive bonding layer 29 electrically bonds each of the plurality of first bonding portions 312 to the second electrodes 212 of each of the plurality of first semiconductor elements 21. Figure 9 As shown, the conductive bonding layer 29 is located between the second main surface 122A of the second conductive layer 122 and the second bonding portion 314 . The conductive bonding layer 29 conductively bonds the second main surface 122A and the second bonding portion 314 .

[0108] like Figure 4 as well as Figure 11 As shown, the second conductive component 32 is electrically connected to the second electrodes 212 of the plurality of second semiconductor elements 22 and the second covering portion 141 of the second power terminal 14. As a result, the second electrodes 212 of the plurality of second semiconductor elements 22 are electrically connected to the second power terminal 14. The second conductive component 32 is composed of copper. The second conductive component 32 is a metal clip. Figure 4 As shown, the second conductive component 32 has two main bodies 321 , a plurality of third bonding portions 322 , a plurality of third connecting portions 323 , two fourth bonding portions 324 , two fourth connecting portions 325 , a plurality of intermediate portions 326 and a plurality of beam portions 327 .

[0109] like Figure 4As shown, the two main body parts 321 are separated from each other in the third direction y. The two main body parts 321 extend in the second direction x. Figure 8 As shown, the two main bodies 321 are arranged parallel to the first main surface 121A of the first conductive layer 121 and the second main surface 122A of the second conductive layer 122. The two main bodies 321 are farther from the first main surface 121A and the second main surface 122A than the main body 311 of the first conductive component 31.

[0110] like Figure 4 As shown, the plurality of intermediate portions 326 are separated from each other in the third direction y and are located between the two main body portions 321 in the third direction y. The plurality of intermediate portions 326 extend in the second direction x. The dimension of each of the plurality of intermediate portions 326 in the second direction x is smaller than the dimension of each of the two main body portions 321 in the second direction x.

[0111] like Figure 11 As shown, the third bonding portions 322 are bonded to the second electrodes 212 of the second semiconductor elements 22 , respectively. The third bonding portions 322 are opposed to any one of the fourth electrodes 222 of the second semiconductor elements 22 , respectively.

[0112] like Figure 4 as well as Figure 12 As shown, the plurality of third connecting portions 323 are connected to both sides of the plurality of third bonding portions 322 in the third direction y. Furthermore, the plurality of third connecting portions 323 are connected to any one of the two main portions 321 and the plurality of intermediate portions 326. When viewed in the second direction x, the plurality of third connecting portions 323 are inclined in a direction away from the second main surface 122A of the second conductive layer 122 as they move from any one of the plurality of third bonding portions 322 toward any one of the two main portions 321 and the plurality of intermediate portions 326.

[0113] like Figure 4 as well as Figure 8 As shown, the two fourth engaging portions 324 are respectively engaged with the second covering portions 141 of the two second power terminals 14. The two fourth engaging portions 324 are respectively opposite to the second covering portions 141.

[0114] like Figure 4 as well as Figure 8 As shown, the two fourth connecting portions 325 are connected to the two main bodies 321 and the two fourth bonding portions 324. When viewed in the third direction y, the two fourth connecting portions 325 are inclined away from the first main surface 121A of the first conductive layer 121 as they move from the two fourth bonding portions 324 toward the two main bodies 321.

[0115] like Figure 4 as well as Figure 13As shown, the plurality of beam portions 327 are arranged along the third direction y. When viewed along the first direction z, the plurality of beam portions 327 include regions that overlap with the plurality of first bonding portions 312 of the first conductive component 31. The beam portion 327 located at the center of the plurality of beam portions 327 in the third direction y has its two sides connected to the plurality of intermediate portions 326 in the third direction y. The remaining two beam portions 327 in the plurality of beam portions 327 have their two sides connected to either of the two main bodies 321 and either of the plurality of intermediate portions 326 in the third direction y. When viewed in the second direction x, the plurality of beam portions 327 are convex in the first direction z toward the side toward which the first principal surface 121A of the first conductive layer 121 faces.

[0116] like Figure 9 、 Figure 11 as well as Figure 12 As shown, the conductive bonding layer 29 is located between the fourth electrodes 222 of each of the plurality of second semiconductor elements 22 and each of the plurality of third bonding portions 322. The conductive bonding layer 29 electrically bonds each of the plurality of third bonding portions 322 to the fourth electrodes 222 of each of the plurality of second semiconductor elements 22. Figure 8 As shown, the conductive bonding layer 29 is located between the second covering portion 141 of each of the two second power terminals 14 and the two fourth bonding portions 324. The conductive bonding layer 29 conductively bonds the second covering portion 141 of each of the two second power terminals 14 to the two fourth bonding portions 324 individually.

[0117] like Figure 8 、 Figure 9 、 Figure 12 as well as Figure 13 As shown, the first sealing resin 50 covers the first conductive layer 121, the second conductive layer 122, the plurality of semiconductor elements 20, the first conductive component 31, and the second conductive component 32. Furthermore, the first sealing resin 50 covers a portion of each of the substrate 11, the first power terminal 13, the third power terminal 15, and the second power terminal 14. The first sealing resin 50 has electrical insulation properties. The first sealing resin 50 is made of a material including, for example, black epoxy resin. Figure 2 as well as Figures 6 to 9 As shown, the first sealing resin 50 has a top surface 51 , a bottom surface 52 , a first side surface 53 , a second side surface 54 , a third side surface 55 , a fourth side surface 56 , and two recessed portions 57 .

[0118] like Figure 8 as well as Figure 9 As shown, the top surface 51 faces the same side as the first main surface 121A of the first conductive layer 121 in the first direction z. Figure 8 as well as Figure 9 As shown, the bottom surface 52 faces the opposite side of the top surface 51 in the first direction z. Figure 7As shown, the heat dissipation layer 113 of the substrate 11 is exposed from the bottom surface 52 .

[0119] like Figure 2 as well as Figure 6 As shown, the first side surface 53 and the second side surface 54 are separated from each other in the second direction x. The first side surface 53 and the second side surface 54 face opposite sides in the second direction x. The first exposed portion 132 of the first power terminal 13 and the second exposed portions 142 of each of the two second power terminals 14 are exposed to the outside from the first side surface 53. The third exposed portions 152 of each of the two third power terminals 15 are exposed to the outside from the second side surface 54.

[0120] like Figure 2 as well as Figure 7 As shown, the third side surface 55 and the fourth side surface 56 are separated from each other in the third direction y. The third side surface 55 and the fourth side surface 56 face opposite sides in the third direction y.

[0121] like Figure 2 as well as Figure 7 As shown, the two recesses 57 are recessed from the first side surface 53 toward the second direction x. The two recesses 57 extend from the top surface 51 to the bottom surface 52 in the first direction z. The two recesses 57 are located on both sides of the first power terminal 13 in the third direction y.

[0122] Next, the first extended terminal 71 , the two second extended terminals 72 , and the third extended terminal 73 included in the semiconductor device A10 will be described.

[0123] like Figure 2 、 Figure 3 as well as Figure 7 As shown, the first extension terminal 71 is conductively connected to the first exposed portion 132 of the first power terminal 13. The first extension terminal 71 extends in the second direction x. A first engaging portion 133 is provided on the first exposed portion 132 of the first power terminal 13. A second engaging portion 714 is provided on the first extension terminal 71. Figure 9 As shown, the second engaging portion 714 contacts the first engaging portion 133 . The first engaging portion 133 and the second engaging portion 714 serve as positioning means for the first extension terminal 71 relative to the first exposed portion 132 .

[0124] like Figures 14 to 16 As shown, a protrusion 132A is provided on the first exposed portion 132 of the first power terminal 13. The protrusion 132A protrudes toward one side in the first direction z. A recess 715 is provided on the first extension terminal 71. The recess 715 is recessed toward the side where the protrusion 132A protrudes in the first direction z. The protrusion 132A is embedded in the recess 715. The first engaging portion 133 of the first power terminal 13 includes the protrusion 132A. The second engaging portion 714 of the first extension terminal 71 includes the recess 715.

[0125] like Figure 2 、 Figure 3 as well as Figure 7 As shown, the two second extension terminals 72 are individually conductively bonded to the second exposed portions 142 of the two second power terminals 14. The two second extension terminals 72 extend along the second direction x. A third engaging portion 143 is provided on the second exposed portion 142 of the two second power terminals 14. The structure of the third engaging portion 143 is the same as that of the first engaging portion 133 of the first power terminal 13. A fourth engaging portion 724 is provided on each of the two second extension terminals 72. The structure of the fourth engaging portion 724 is the same as that of the second engaging portion 714 of the first extension terminal 71. Figure 8 As shown, the fourth engaging portion 724 contacts the third engaging portion 143. The third engaging portion 143 and the fourth engaging portion 724 are positioning units for either of the two second extension terminals 72 relative to the second exposed portion 142.

[0126] like Figure 2 、 Figure 3 as well as Figure 7 As shown, the third extension terminal 73 is conductively bonded to the third exposed portion 152 of each of the two third power terminals 15. The third extension terminal 73 includes two internal connection portions 731, an external connection portion 732, and a connecting portion 733. The two internal connection portions 731 are individually conductively bonded to the third exposed portion 152 of each of the two third power terminals 15. The external connection portion 732 is located on the opposite side of the two internal connection portions 731 relative to the connecting portion 733. The connecting portion 733 connects the two internal connection portions 731 to the external connection portion 732.

[0127] like Figure 7 As shown, a fifth engaging portion 153 is provided on each of the third exposed portions 152 of the two third power terminals 15. The structure of the fifth engaging portion 153 is the same as that of the first engaging portion 133 of the first power terminal 13. A sixth engaging portion 734 is provided on each of the two internal connection portions 731 of the third extension terminal 73. The structure of the sixth engaging portion 734 is the same as that of the second engaging portion 714 of the first extension terminal 71. Figure 8 As shown, the sixth engaging portion 734 contacts the fifth engaging portion 153 . The fifth engaging portion 153 and the sixth engaging portion 734 serve as positioning means for the third extension terminal 73 relative to the third exposed portion 152 .

[0128] Then, based on Figure 17 as well as Figure 18 , a semiconductor device A11 according to a first modification example of the first embodiment of the present disclosure is described. Figure 17 Corresponding to the semiconductor device A10 Figure 14In the semiconductor device A11, the structures of the first engaging portion 133 of the first power terminal 13 and the second engaging portion 714 of the first extension terminal 71 are different from those of the semiconductor device A10.

[0129] like Figure 18 As shown, the first exposed portion 132 of the first power terminal 13 has an end face 132B, a first abutting face 132C, and an intermediate face 132D. The end face 132B faces the side opposite to the first side face 53 of the first sealing resin 50 in the second direction x. The first abutting face 132C faces the same side as the end face 132B in the second direction x. The first abutting face 132C is located between the end face 132B and the first side face 53 in the second direction x. The intermediate face 132D is located between the end face 132B and the first abutting face 132C in the first direction z. When viewed along the first direction z, the intermediate face 132D overlaps with the first extended terminal 71. The intermediate face 132D faces the first extended terminal 71.

[0130] like Figure 17 as well as Figure 18 As shown, the first extended terminal 71 has a second contact surface 716. The second contact surface 716 faces the first contact surface 132C of the first exposed portion 132 of the first power terminal 13. The first extended terminal 71 contacts the intermediate surface 132D of the first exposed portion 132 of the first power terminal 13.

[0131] In the semiconductor device A11 , the first engaging portion 133 of the first power terminal 13 includes a first abutting surface 132C. The second engaging portion 714 of the first extended terminal 71 includes a second abutting surface 716 .

[0132] Then, based on Figures 19 to 21 , a semiconductor device A12 according to a second modified example of the first embodiment of the present disclosure is described. Figure 19 Corresponding to the semiconductor device A10 Figure 14 In the semiconductor device A12, the structures of the first engaging portion 133 of the first power terminal 13 and the second engaging portion 714 of the first extension terminal 71 are different from those of the semiconductor device A10.

[0133] like Figure 20 As shown, the first exposed portion 132 of the first power terminal 13 has an end surface 132B, a first abutting surface 132C, an intermediate surface 132D, and an auxiliary recess 132E. The auxiliary recess 132E is recessed from the first abutting surface 132C. Figure 19 as well as Figure 20 As shown, the first extension terminal 71 has a second abutting surface 716 and an auxiliary protrusion 717. The auxiliary protrusion 717 protrudes from the second abutting surface 716. Figure 20As shown, the auxiliary protrusion 717 is embedded in the auxiliary recess 132E.

[0134] In the semiconductor device A12 , the first engaging portion 133 of the first power terminal 13 includes a first contact surface 132C and an auxiliary recess 132E. The second engaging portion 714 of the first extended terminal 71 includes a second contact surface 716 and an auxiliary protrusion 717 .

[0135] Then, based on Figure 22 as well as Figure 23 , a semiconductor device A13 according to a third modified example of the first embodiment of the present disclosure is described. Figure 22 Corresponding to the semiconductor device A10 Figure 14 In the semiconductor device A13, the structures of the first engaging portion 133 of the first power terminal 13 and the second engaging portion 714 of the first extension terminal 71 are different from those of the semiconductor device A10.

[0136] like Figure 22 as well as Figure 23 As shown, the first exposed portion 132 of the first power terminal 13 includes a base portion 132F and two stepped portions 132G. The base portion 132F protrudes from the first side surface 53 of the first sealing resin 50 in the second direction x. The two stepped portions 132G are located on either side of the base portion 132F in the third direction y. The two stepped portions 132G each protrude from the base portion 132F in the third direction y.

[0137] like Figure 22 as well as Figure 23 As shown, the first extended terminal 71 has a main portion 718 and two side portions 719. When viewed in the first direction z, the main portion 718 overlaps with the base portion 132F of the first exposed portion 132 of the first power terminal 13. The two side portions 719 are connected to both sides of the main portion 718 in the third direction y. The two side portions 719 are respectively opposed to the two stepped portions 132G of the first exposed portion 132. The two stepped portions 132G are independently subjected to compressive forces from the two side portions 719.

[0138] In the semiconductor device A13 , the first engaging portion 133 of the first power terminal 13 includes two step portions 132G. The second engaging portion 714 of the first extended terminal 71 includes two side portions 719 .

[0139] Then, based on Figure 24 Next, a vehicle B equipped with the semiconductor device A10 will be described. The vehicle B is, for example, an electric vehicle (EV).

[0140] like Figure 24As shown, vehicle B includes an onboard charger 81, a battery 82, and a drive system 83. Power is wirelessly supplied to the onboard charger 81 from an outdoor power supply facility (not shown). Alternatively, the power supply from the power supply facility to the onboard charger 81 may be wired. The onboard charger 81 includes a step-up DC-DC converter. The voltage of the power supplied to the onboard charger 81 is boosted by the converter and then supplied to the battery 82. The boosted voltage is, for example, 600V.

[0141] The drive system 83 drives the vehicle B. The drive system 83 includes an inverter 831 and a drive source 832. The semiconductor device A10 forms a part of the inverter 831. The power stored in the battery 82 is supplied to the inverter 831. The power supplied from the battery 82 to the inverter 831 is DC power. Figure 24 Unlike the power system shown, a step-up DC-DC converter may be further provided between the battery 82 and the inverter 831. The inverter 831 converts DC power into AC power. The inverter 831 including the semiconductor device A10 is electrically connected to the drive source 832. The drive source 832 includes an AC motor and a transmission. When the AC power converted by the inverter 831 is supplied to the drive source 832, the AC motor rotates, and the rotation is transmitted to the transmission. The transmission rotates the drive shaft of the vehicle B on the basis of appropriately reducing the rotation speed transmitted from the AC motor. In this way, the vehicle B is driven. When driving the vehicle B, it is necessary to freely operate the rotation speed of the AC motor based on information such as the amount of change in the accelerator pedal. Therefore, in order to correspond to the required rotation speed of the AC motor, the semiconductor device A10 in the inverter 831 needs to output AC power with an appropriately varying frequency.

[0142] Next, the effects of the semiconductor device A10 will be described.

[0143] Semiconductor device A10 includes a first conductive layer 121, a first semiconductor element 21, a first power terminal 13, a first sealing resin 50, and a first extended terminal 71. The first power terminal 13 has a first exposed portion 132 that is exposed to the outside from the first sealing resin 50. The first extended terminal 71 is electrically connected to the first exposed portion 132. This structure allows for greater flexibility in the size and shape of the first exposed portion 132, which is used for external connections of semiconductor device A10. Therefore, this structure increases the flexibility of the power terminal in semiconductor device A10 with respect to external connections.

[0144] The first exposed portion 132 of the first power terminal 13 is provided with a first engaging portion 133. The first extension terminal 71 is provided with a second engaging portion 714 that contacts the first engaging portion 133. With this structure, the first engaging portion 133 and the second engaging portion 714 can be used as a means for positioning the first extension terminal 71 relative to the first exposed portion 132 when the first extension terminal 71 is electrically connected to the first exposed portion 132.

[0145] In the semiconductor device A10, the first engaging portion 133 includes the protrusion 132A of the first exposed portion 132 of the first power terminal 13. The second engaging portion 714 includes the recess 715 of the first extended terminal 71. By fitting the protrusion 132A into the recess 715, displacement of the first extended terminal 71 relative to the first exposed portion 132 in a direction perpendicular to the first direction z can be restricted.

[0146] In the semiconductor device A11, the first engaging portion 133 includes a first abutting surface 132C of the first exposed portion 132 of the first power terminal 13. The second engaging portion 714 includes a second abutting surface 716 of the first extended terminal 71. The contact between the second abutting surface 716 and the first abutting surface 132C restricts displacement of the first extended terminal 71 relative to the first exposed portion 132 in the second direction x.

[0147] In the semiconductor device A12, the first engaging portion 133 includes a first abutting surface 132C and an auxiliary recess 132E for the first exposed portion 132 of the first power terminal 13. The second engaging portion 714 includes a second abutting surface 716 for the first extended terminal 71 and an auxiliary protrusion 717. With the second abutting surface 716 in contact with the first abutting surface 132C and the auxiliary protrusion 717 embedded in the auxiliary recess 132E, displacement of the first extended terminal 71 relative to the first exposed portion 132 in a direction perpendicular to the first direction z can be restricted.

[0148] In the semiconductor device A13, the first engaging portion 133 includes two stepped portions 132G of the first exposed portion 132 of the first power terminal 13. The second engaging portion 714 includes two side portions 719 of the first extended terminal 71. The two side portions 719 contact the two stepped portions 132G, respectively, thereby limiting displacement of the first extended terminal 71 relative to the first exposed portion 132 in both the second direction x and the third direction y.

[0149] Second embodiment:

[0150] based on Figure 25 as well as Figure 26 , a semiconductor device A20 according to a second embodiment of the present disclosure will be described. In these figures, elements identical or similar to those of the semiconductor device A10 described above are denoted by the same reference numerals, and duplicate descriptions are omitted.

[0151] The semiconductor device A20 differs from the semiconductor device A10 in that the semiconductor device A20 does not include the first extended terminal 71 , the two second extended terminals 72 , and the third extended terminal 73 .

[0152] like Figure 25 As shown, a first engaging portion 133 is provided on the first exposed portion 132 of the first power terminal 13. The structure of the first engaging portion 133 is the same as that of the first engaging portion 133 of the semiconductor device A10. Figure 25 as well as Figure 26 As shown, a third engaging portion 143 is provided on the second exposed portion 142 of each of the two second power terminals 14. The structure of the third engaging portion 143 is the same as that of the third engaging portion 143 of the semiconductor device A10. A fifth engaging portion 153 is provided on each of the two third power terminals 15. The structure of the fifth engaging portion 153 is the same as that of the fifth engaging portion 153 of the semiconductor device A10.

[0153] Next, the effects of the semiconductor device A20 will be described.

[0154] The semiconductor device A20 includes a first conductive layer 121, a first semiconductor element 21, a first power terminal 13, and a first sealing resin 50. The first power terminal 13 has a first exposed portion 132 that is exposed to the outside from the first sealing resin 50. A first engaging portion 133 is provided on the first exposed portion 132. By adopting this structure, when the first extended terminal 71 is conductively bonded to the first exposed portion 132, the first engaging portion 133 can be used as a positioning means for the first extended terminal 71 relative to the first exposed portion 132. This allows for more flexible setting of the size, shape, and other aspects of the first exposed portion 132 related to the external connection of the semiconductor device A20. Therefore, according to this structure, the semiconductor device A20 can also achieve increased freedom in the power terminal's external connection.

[0155] Third embodiment:

[0156] based on Figures 27 to 29 , a semiconductor device A30 according to a third embodiment of the present disclosure will be described. In these figures, elements identical or similar to those of the semiconductor device A10 described above are denoted by the same reference numerals, and duplicate descriptions are omitted.

[0157] The semiconductor device A30 differs from the semiconductor device A10 in the structure of the first extended terminal 71 and in that one second extended terminal 72 is provided instead of two second extended terminals 72 .

[0158] like Figure 27 as well as Figure 29As shown, the first extended terminal 71 includes an internal connection portion 711, two external connection portions 712, and a connecting portion 713. The internal connection portion 711 is electrically bonded to the first exposed portion 132 of the first power terminal 13. The two external connection portions 712 are located on the opposite side of the internal connection portion 711 relative to the connecting portion 713. The two external connection portions 712 are separated from each other in the third direction y. The connecting portion 713 connects the internal connection portion 711 to the two external connection portions 712.

[0159] like Figure 27 as well as Figure 28 As shown, the second extension terminal 72 has two internal connection portions 721, an external connection portion 722, and a connecting portion 723. The two internal connection portions 721 are electrically connected to the second exposed portions 142 of the two second power terminals 14, respectively. The external connection portion 722 is located on the opposite side of the two internal connection portions 721 relative to the connecting portion 723. The connecting portion 723 connects the two internal connection portions 721 to the external connection portion 722.

[0160] like Figure 27 As shown, when viewed in the first direction z, the second extended terminal 72 overlaps the first extended terminal 71. The external connection portion 722 of the second extended terminal 72 is located between the two external connection portions 712 of the first extended terminal 71 in the third direction y. In the first direction z, the two external connection portions 712 are located closer to the bottom surface 52 of the first sealing resin 50 than the external connection portion 722.

[0161] Next, the effects of the semiconductor device A30 will be described.

[0162] Semiconductor device A30 includes a first conductive layer 121, a first semiconductor element 21, a first power terminal 13, a first sealing resin 50, and a first extended terminal 71. The first power terminal 13 has a first exposed portion 132 that is exposed to the outside from the first sealing resin 50. The first extended terminal 71 is electrically bonded to the first exposed portion 132. Therefore, according to this structure, even in semiconductor device A30, the degree of freedom regarding external connection of the power terminal can be increased. Furthermore, semiconductor device A30 has a structure common to semiconductor device A10, thus achieving the same functions and effects as semiconductor device A10.

[0163] Fourth embodiment:

[0164] based on Figures 30 to 32 In these figures, the same or similar elements as those of the aforementioned semiconductor devices A10 and A30 are denoted by the same reference numerals, and duplicate descriptions are omitted.

[0165] In the semiconductor device A40 , the structures of the first extended terminals 71 and the second extended terminals 72 are different from those of the semiconductor device A30 .

[0166] like Figure 30 As shown, the first extended terminal 71 does not include the internal connection portion 711, the two external connection portions 712, and the linking portion 713, similarly to the case of the semiconductor device A10. Figures 30 to 32 As shown, the first extended terminal 71 has a first front end portion 71A located farthest from the first sealing resin 50 when viewed in the first direction z.

[0167] like Figure 31 as well as Figure 32 As shown, when viewed in the first direction z, the second extended terminal 72 has a second tip portion 72A located farthest from the first sealing resin 50. When viewed in the first direction z, the second tip portion 72A overlaps with the first tip portion 71A of the first extended terminal 71. In the first direction z, the second tip portion 72A is located closer to the bottom surface 52 of the first sealing resin 50 than the first tip portion 71A.

[0168] Next, the effects of the semiconductor device A40 will be described.

[0169] Semiconductor device A40 includes a first conductive layer 121, a first semiconductor element 21, a first power terminal 13, a first sealing resin 50, and a first extended terminal 71. The first power terminal 13 has a first exposed portion 132 that is exposed to the outside from the first sealing resin 50. The first extended terminal 71 is electrically bonded to the first exposed portion 132. Therefore, according to this structure, even in semiconductor device A40, the degree of freedom regarding external connection of the power terminal can be increased. Furthermore, semiconductor device A40 has a structure common to semiconductor device A10, thus achieving the same functions and effects as semiconductor device A10.

[0170] In semiconductor device A40, first extended terminal 71 has a first tip portion 71A. Second extended terminal 72 has a second tip portion 72A. When viewed along first direction z, second tip portion 72A overlaps first tip portion 71A. This structure allows for a more compact bus bar when connected to first and second extended terminals 71, 72.

[0171] Fifth embodiment:

[0172] based on Figure 33 as well as Figure 34In these figures, the same or similar elements as those of the aforementioned semiconductor devices A10 and A30 are denoted by the same reference numerals, and duplicate descriptions are omitted.

[0173] The semiconductor device A50 differs from the semiconductor device A30 in that the semiconductor device A50 further includes a second sealing resin 74 .

[0174] like Figure 33 as well as Figure 34 As shown, the second sealing resin 74 covers a portion of each of the first extension terminal 71 and the second extension terminal 72. The internal connection portion 711 of the first extension terminal 71 and the two external connection portions 712 of the first extension terminal 71 are exposed to the outside through the second sealing resin 74. The two internal connection portions 721 of the second extension terminal 72 and the external connection portion 722 of the second extension terminal 72 are exposed to the outside through the second sealing resin 74.

[0175] Next, the effects of the semiconductor device A50 will be described.

[0176] Semiconductor device A50 includes a first conductive layer 121, a first semiconductor element 21, a first power terminal 13, a first sealing resin 50, and a first extended terminal 71. The first power terminal 13 has a first exposed portion 132 that is exposed to the outside from the first sealing resin 50. The first extended terminal 71 is electrically bonded to the first exposed portion 132. Therefore, according to this structure, semiconductor device A50 can also achieve increased freedom in external connection of the power terminal. Furthermore, semiconductor device A50 has a structure common to semiconductor device A10, thus achieving the same functions and effects as semiconductor device A10.

[0177] The semiconductor device A50 further includes a second sealing resin 74 that covers a portion of each of the first extended terminal 71 and the second extended terminal 72. This structure allows the first extended terminal 71 and the second extended terminal 72 to be integrally formed with the second sealing resin 74. This facilitates conductive bonding between the first extended terminal 71 and the first exposed portion 132 of the first power terminal 13, and between the second extended terminal 72 and the second exposed portion 142 of the second power terminal 14.

[0178] Sixth embodiment:

[0179] based on Figure 35 as well as Figure 36In these figures, the same or similar elements as those in the aforementioned semiconductor devices A10 and A30 are denoted by the same reference numerals, and duplicate descriptions are omitted.

[0180] In the semiconductor device A60 , the structures of the first extended terminal 71 , the second extended terminal 72 , and the third extended terminal 73 are different from those of the semiconductor device A30 .

[0181] like Figure 35 As shown, the first extended terminal 71 is different from the semiconductor device A30 in that it has one external connection portion 712 instead of two external connection portions 712. Figure 35 as well as Figure 36 As shown, the external connection portion 712 of the first extended terminal 71 , the external connection portion 722 of the second extended terminal 72 , and the external connection portion 732 of the third extended terminal 73 are located on the side opposite to the fourth side 56 with respect to the third side 55 of the first sealing resin 50 .

[0182] Next, the effects of the semiconductor device A60 will be described.

[0183] Semiconductor device A60 includes a first conductive layer 121, a first semiconductor element 21, a first power terminal 13, a first sealing resin 50, and a first extended terminal 71. The first power terminal 13 has a first exposed portion 132 that is exposed to the outside from the first sealing resin 50. The first extended terminal 71 is electrically connected to the first exposed portion 132. Therefore, according to this structure, semiconductor device A60 can also achieve increased freedom in external connection of the power terminal. Furthermore, by having a structure common to semiconductor device A10, semiconductor device A60 can achieve the same functions and effects as semiconductor device A10.

[0184] The present disclosure is not limited to the above-described embodiment, and various design changes can be freely made to the specific structure of each part of the present disclosure.

[0185] The present disclosure includes the embodiments described in the following supplementary notes.

[0186] Supplementary Note 1. A semiconductor device comprising:

[0187] a first conductive layer;

[0188] a first semiconductor element bonded to one side of the first conductive layer in a first direction;

[0189] a first power terminal electrically connected to the first conductive layer and the first semiconductor element;

[0190] a first sealing resin covering the first conductive layer and the first semiconductor element; and

[0191] a first expansion terminal conductively engaged with the first power terminal;

[0192] The first power terminal has a first exposed portion exposed to the outside from the first sealing resin.

[0193] The first extension terminal is conductively bonded to the first exposed portion.

[0194] Supplementary Note 2. A semiconductor device comprising:

[0195] a first conductive layer;

[0196] a first semiconductor element bonded to one side of the first conductive layer in a first direction;

[0197] a first power terminal electrically connected to the first conductive layer and the first semiconductor element; and

[0198] a first sealing resin covering the first conductive layer and the first semiconductor element;

[0199] The first power terminal has a first exposed portion exposed to the outside from the first sealing resin.

[0200] A first engaging portion is provided on the first exposed portion.

[0201] Supplementary note 3. The semiconductor device according to Supplementary note 1, wherein

[0202] A first engaging portion is provided on the first exposed portion.

[0203] The first extension terminal is provided with a second engaging portion that contacts the first engaging portion.

[0204] Supplementary note 4. The semiconductor device according to Supplementary note 2, wherein

[0205] It also includes a first expansion terminal, the first expansion terminal being conductively connected to the first exposed portion,

[0206] The first extension terminal is provided with a second engaging portion that contacts the first engaging portion.

[0207] Supplementary note 5. The semiconductor device according to Supplementary note 3 or 4, wherein

[0208] The first exposed portion is provided with a convex portion protruding toward one side of the first direction,

[0209] The first extension terminal is provided with a recessed portion that is recessed toward a side protruding from the convex portion in the first direction.

[0210] The first engaging portion includes the convex portion,

[0211] The second engaging portion includes the recessed portion.

[0212] Supplementary note 6. The semiconductor device according to Supplementary note 3 or 4, wherein

[0213] The first exposed portion includes: an end surface facing a side opposite to a side where the first sealing resin is located in a second direction orthogonal to the first direction; a first abutting surface facing the same side as the end surface in the second direction; and an intermediate surface facing the first direction.

[0214] The first contact surface is located between the end surface and the first sealing resin in the second direction,

[0215] The intermediate surface is located between the end surface and the first abutting surface in the first direction and overlaps with the first extended terminal when viewed in the first direction.

[0216] The first extension terminal has a second abutting surface facing the first abutting surface.

[0217] The first engaging portion includes the first abutting surface,

[0218] The second engaging portion includes the second abutting surface.

[0219] Supplementary note 7. The semiconductor device according to Supplementary note 6, wherein

[0220] The first exposed portion is provided with an auxiliary recessed portion recessed from the first contact surface.

[0221] The first extension terminal is provided with an auxiliary protrusion protruding from the second contact surface.

[0222] The first engaging portion includes the auxiliary recess,

[0223] The second engaging portion includes the auxiliary protrusion.

[0224] Supplementary note 8. The semiconductor device according to Supplementary note 3 or 4, wherein

[0225] The first exposed portion includes: a base portion protruding from the first sealing resin in a second direction perpendicular to the first direction; and two step portions located on both sides of the base portion in a third direction perpendicular to the first direction and the second direction.

[0226] The first extension terminal has: a main portion overlapping the base portion when viewed in the first direction; and two side portions connected to both sides of the main portion in the third direction.

[0227] The two step portions protrude from the base portion toward the third direction respectively.

[0228] The two side portions are respectively opposite to the two step portions,

[0229] The first engaging portion includes the two step portions,

[0230] The second engaging portion includes the two side portions.

[0231] Supplementary Note 9. The semiconductor device according to Supplementary Note 3 or 4, further comprising:

[0232] a second semiconductor element that is electrically connected to the first semiconductor element and is covered by the first sealing resin;

[0233] a second power terminal electrically connected to the second semiconductor element; and

[0234] a second expansion terminal, which is conductively engaged with the second power terminal;

[0235] The second power terminal has a second exposed portion exposed to the outside from the first sealing resin.

[0236] The second extended terminal is conductively bonded to the second exposed portion.

[0237] Supplementary note 10. The semiconductor device according to Supplementary note 9, wherein

[0238] When viewed in the first direction, the second expansion terminal overlaps with the first expansion terminal.

[0239] Supplementary note 11. The semiconductor device according to Supplementary note 10, wherein

[0240] The first extension terminal has a first front end portion located farthest from the first sealing resin when viewed in the first direction.

[0241] The second extended terminal has a second front end portion located farthest from the first sealing resin when viewed in the first direction.

[0242] When viewed in the first direction, the second front end portion overlaps with the first front end portion.

[0243] Supplementary note 12. The semiconductor device according to Supplementary note 9, wherein

[0244] A second sealing resin is further provided, the second sealing resin covering a portion of each of the first extension terminal and the second extension terminal.

[0245] Supplementary note 13. The semiconductor device according to Supplementary note 9,

[0246] further comprising a second conductive layer, the second conductive layer being covered with the first sealing resin,

[0247] The first semiconductor element is conductively bonded to the first conductive layer.

[0248] The second semiconductor element is conductively bonded to the second conductive layer.

[0249] Supplementary note 14. The semiconductor device according to Supplementary note 13, further comprising:

[0250] a third power terminal electrically connected to the second conductive layer; and

[0251] a third expansion terminal, which is conductively connected to the third power terminal;

[0252] The third power terminal has a third exposed portion exposed to the outside from the first sealing resin.

[0253] The third extension terminal is conductively connected to the third exposed portion.

[0254] Supplementary note 15. The semiconductor device according to Supplementary note 14, wherein

[0255] The first sealing resin has a first side surface and a second side surface facing opposite sides in a second direction perpendicular to the first direction.

[0256] The first exposed portion and the second exposed portion are respectively exposed to the outside from the first side surface.

[0257] The third exposed portion is exposed to the outside from the second side surface.

[0258] Supplementary note 16. The semiconductor device according to Supplementary note 15, wherein

[0259] The first sealing resin has a third side surface and a fourth side surface facing opposite sides in a third direction perpendicular to the first direction and the second direction.

[0260] The first extended terminal, the second extended terminal, and the third extended terminal each include a portion located on a side opposite to the fourth side surface with respect to the third side surface.

[0261] Supplementary note 17. A vehicle comprising:

[0262] a driving source; and

[0263] The semiconductor device according to claim 14,

[0264] The semiconductor device is electrically connected to the driving source.

[0265] Explanation of symbols

[0266] A10, A20, A30, A40—semiconductor device; B—vehicle; 11—substrate; 111—insulating layer; 112—intermediate layer; 113—heat dissipation layer; 113A—base surface; 113B—recessed portion; 121—first conductive layer; 121A—first main surface; 122—second conductive layer; 122A—second main surface; 129—first bonding layer; 13—first power terminal; 131—first covering portion; 132—first exposed portion; 132A—convex portion; 132B—end surface; 132C—first contact surface; 132D—intermediate surface; 132E—auxiliary recess; 132F—base; 132G—stepped portion; 133—first engaging portion; 14—second power terminal; 141—second covering portion; 14 2—second exposed portion; 143—third engaging portion; 15—third power terminal; 151—third covering portion; 152—third exposed portion; 153—fifth engaging portion; 161—first signal terminal; 162—second signal terminal; 171—third signal terminal; 172—fourth signal terminal; 181—fifth signal terminal; 182—sixth signal terminal; 191—seventh signal terminal; 192—eighth signal terminal; 20—semiconductor element; 21—first semiconductor element; 211—first electrode; 212—second electrode; 213—first gate electrode; 214—first detection electrode; 22—second semiconductor element; 221—third electrode; 222—fourth electrode; 223—second gate electrode; 224— Second detection electrode; 23—thermistor; 29—conductive bonding layer; 31—first conductive component; 311—main body; 312—first bonding portion; 313—first connecting portion; 314—second bonding portion; 315—second connecting portion; 32—second conductive component; 321—main body; 322—third bonding portion; 323—third connecting portion; 324—fourth bonding portion; 325—fourth connecting portion; 326—intermediate portion; 327—beam portion; 41-47—first to seventh conductive wires; 50—first sealing resin; 51—top surface; 52—bottom surface; 53—first side surface; 54—second side surface; 55—third side surface; 56—fourth side surface; 57—recess; 61—first wiring; 611—first mounting layer; 612—first metal layer; 613—first gate wiring layer; 614—first detection wiring layer; 615—first temperature detection wiring layer; 616—second detection wiring layer; 62—second wiring; 621—second mounting layer; 622—second metal layer; 623—second gate wiring layer; 624—third detection wiring layer; 625—second temperature detection wiring layer; 626—fourth detection wiring layer; 63—sleeve; 631—end surface; 68—second bonding layer; 69—third bonding layer; 71—first extension terminal; 711—internal connection portion; 712—external connection portion; 713—connecting portion; 714—second engaging portion; 715—recessed portion; 716—second abutting surface; 717—auxiliary protrusion; 718—main portion;719 — side portion; 72 — second extension terminal; 721 — internal connection portion; 722 — external connection portion; 723 — connection portion; 724 — fourth engaging portion; 73 — third extension terminal; 731 — internal connection portion; 732 — external connection portion; 733 — connection portion; 734 — sixth engaging portion; 74 — second sealing resin; 80 — fast power supply facility; 81 — converter; 81 — on-board charger; 82 — battery; 83 — drive system; 831 — inverter; 832 — drive source; z — first direction; x — second direction; y — third direction.

Claims

1. A semiconductor device, characterized in that: have: a first conductive layer; a first semiconductor element bonded to one side of the first conductive layer in a first direction; a first power terminal electrically connected to the first conductive layer and the first semiconductor element; a first sealing resin covering the first conductive layer and the first semiconductor element; as well as a first expansion terminal conductively engaged with the first power terminal; The first power terminal has a first exposed portion exposed to the outside from the first sealing resin. The first extension terminal is conductively bonded to the first exposed portion.

2. A semiconductor device, characterized in that: have: a first conductive layer; a first semiconductor element bonded to one side of the first conductive layer in a first direction; a first power terminal electrically connected to the first conductive layer and the first semiconductor element; as well as a first sealing resin covering the first conductive layer and the first semiconductor element; The first power terminal has a first exposed portion exposed to the outside from the first sealing resin. A first engaging portion is provided on the first exposed portion.

3. The semiconductor device according to claim 1, wherein A first engaging portion is provided on the first exposed portion. The first extension terminal is provided with a second engaging portion that contacts the first engaging portion.

4. The semiconductor device according to claim 2, wherein It also includes a first expansion terminal, the first expansion terminal being conductively connected to the first exposed portion, The first extension terminal is provided with a second engaging portion that contacts the first engaging portion.

5. The semiconductor device according to claim 3 or 4, wherein: The first exposed portion is provided with a convex portion protruding toward one side of the first direction, The first extension terminal is provided with a recessed portion that is recessed toward a side protruding from the convex portion in the first direction. The first engaging portion includes the convex portion, The second engaging portion includes the recessed portion.

6. The semiconductor device according to claim 3 or 4, wherein: The first exposed portion includes: an end surface facing a side opposite to a side where the first sealing resin is located in a second direction orthogonal to the first direction; a first abutting surface facing the same side as the end surface in the second direction; and an intermediate surface facing the first direction. The first contact surface is located between the end surface and the first sealing resin in the second direction, The intermediate surface is located between the end surface and the first abutting surface in the first direction and overlaps with the first extended terminal when viewed in the first direction. The first extension terminal has a second abutting surface facing the first abutting surface. The first engaging portion includes the first abutting surface, The second engaging portion includes the second abutting surface.

7. The semiconductor device according to claim 6, wherein: The first exposed portion is provided with an auxiliary recessed portion recessed from the first contact surface. The first extension terminal is provided with an auxiliary protrusion protruding from the second contact surface. The first engaging portion includes the auxiliary recess, The second engaging portion includes the auxiliary protrusion.

8. The semiconductor device according to claim 3 or 4, wherein: The first exposed portion includes: a base portion protruding from the first sealing resin in a second direction perpendicular to the first direction; and two step portions located on both sides of the base portion in a third direction perpendicular to the first direction and the second direction. The first extension terminal has: a main portion overlapping the base portion when viewed in the first direction; and two side portions connected to both sides of the main portion in the third direction, The two step portions protrude from the base portion toward the third direction respectively. The two side portions are respectively opposite to the two step portions, The first engaging portion includes the two step portions, The second engaging portion includes the two side portions.

9. The semiconductor device according to claim 3 or 4, wherein: Also features: a second semiconductor element that is electrically connected to the first semiconductor element and is covered by the first sealing resin; a second power terminal electrically connected to the second semiconductor element; as well as a second expansion terminal, which is conductively engaged with the second power terminal; The second power terminal has a second exposed portion exposed to the outside from the first sealing resin. The second extended terminal is conductively bonded to the second exposed portion.

10. The semiconductor device according to claim 9, wherein When viewed in the first direction, the second expansion terminal overlaps with the first expansion terminal.

11. The semiconductor device according to claim 10, wherein The first extension terminal has a first front end portion located farthest from the first sealing resin when viewed in the first direction. The second extended terminal has a second front end portion located farthest from the first sealing resin when viewed in the first direction. When viewed in the first direction, the second front end portion overlaps with the first front end portion.

12. The semiconductor device according to claim 9, wherein A second sealing resin is further provided, the second sealing resin covering a portion of each of the first extension terminal and the second extension terminal.

13. The semiconductor device according to claim 9, wherein further comprising a second conductive layer, the second conductive layer being covered with the first sealing resin, The first semiconductor element is conductively bonded to the first conductive layer. The second semiconductor element is conductively bonded to the second conductive layer.

14. The semiconductor device according to claim 13, wherein Also features: a third power terminal electrically connected to the second conductive layer; and a third expansion terminal, which is conductively connected to the third power terminal; The third power terminal has a third exposed portion exposed to the outside from the first sealing resin. The third extension terminal is conductively connected to the third exposed portion.

15. The semiconductor device according to claim 14, wherein The first sealing resin has a first side surface and a second side surface facing opposite sides in a second direction perpendicular to the first direction. The first exposed portion and the second exposed portion are respectively exposed to the outside from the first side surface. The third exposed portion is exposed to the outside from the second side surface.

16. The semiconductor device according to claim 15, wherein The first sealing resin has a third side surface and a fourth side surface facing opposite sides in a third direction perpendicular to the first direction and the second direction. The first extended terminal, the second extended terminal, and the third extended terminal each include a portion located on a side opposite to the fourth side surface with respect to the third side surface.

17. A vehicle, characterized in that: have: a driving source; and The semiconductor device according to claim 14, The semiconductor device is electrically connected to the driving source.

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