Hydrochloric acid type P-ITO etching solution as well as preparation method and application thereof

Abstract

The invention discloses a hydrochloric acid type P-ITO etching solution as well as a preparation method and application thereof, and relates to the technical field of liquid crystal panel etching solutions, the hydrochloric acid type P-ITO etching solution comprises the following components in percentage by mass: 20-24% of a first inorganic acid aqueous solution, 5-7% of a second inorganic acid, 0.1-0.5% of a metal corrosion inhibitor, 0.001-0.1% of inorganic chloride and the balance of water; the first inorganic acid at least comprises hydrochloric acid; the second inorganic acid at least comprises acetic acid; the concentration of the first inorganic acid in the first inorganic acid aqueous solution is not less than 40wt%. The method is low in cost, mild in etching reaction, uniform in etching, free of obvious edge sawteeth, free of ITO crystal residues, free of damage to metal Mo, free of pollution elements such as phosphorus and the like, and green and environment-friendly.

Description

Technical Field

[0001] The present application belongs to the technical field of liquid crystal panel etching solutions, and in particular relates to a hydrochloric acid type P-ITO etching solution, a preparation method thereof, and applications thereof. Background Art

[0002] ITO (Indium Tin Oxide) is an inorganic composite material typically composed of 90% indium oxide (In2O3) and 10% tin oxide (SnO2). ITO thin film is an n-type semiconductor material with high electrical conductivity, high visible light transmittance, high mechanical hardness, and high chemical stability. These transparent and conductive properties, which are difficult for other materials to possess simultaneously, make ITO the material of choice for transparent conductive films. It is widely used in various optoelectronic devices requiring transparent electrodes, such as display screens (LCD / OLED), touch panels, and solar cells.

[0003] With the rapid development of the display device industry, new requirements have been put forward for the product performance characteristics of ITO films. ITO films with different performance characteristics also require suitable ITO etching solutions, which also poses new challenges to the research and development of ITO etching solutions.

[0004] For widely used thin-film substrates such as α-ITO, P-ITO, Cu / ITO, and ITO-Ag-ITO, the commonly used ITO etching solutions in the prior art primarily include aqua regia, oxalic acid, and sulfonic acid systems. Aqua regia etching solutions are strong acid solutions composed of a mixture of concentrated hydrochloric acid and concentrated nitric acid in a specific ratio. They are highly corrosive, produce a violent etching reaction, and are difficult to control the etching angle, resulting in unsatisfactory etching results for various ITO films. Furthermore, the indium in ITO in oxalic acid etching solutions complexes with oxalic acid to form indium oxalate. Long-term use can lead to the deposition of indium oxalate crystals, affecting the proper operation of the equipment and subsequent etching results. Summary of the Invention

[0005] The purpose of this application is to provide a hydrochloric acid type P-ITO etching solution, a preparation method and application thereof, in order to solve the above-mentioned problems existing in the aqua regia system and the oxalic acid system of the existing ITO etching solution.

[0006] To achieve the above application objectives, the technical solutions adopted in this application are as follows:

[0007] In a first aspect, the present application provides a hydrochloric acid-based P-ITO etching solution comprising the following components in percentage by mass:

[0008] 20-24% first inorganic acid aqueous solution, 5-7% second inorganic acid, 0.1-0.5% metal corrosion inhibitor, 0.001-0.1% inorganic chloride, and the balance is water;

[0009] The first inorganic acid includes at least hydrochloric acid; the second inorganic acid includes at least acetic acid;

[0010] The concentration of the first inorganic acid in the first inorganic acid aqueous solution is ≥40 wt %.

[0011] As a possible design, the metal corrosion inhibitor is at least one of benzotriazole, 5-aminotetrazole, 1,2,4-triazole, benzopyrrole, 3-amino-1,2,4-triazole, 3,5-diamino-1,2,4-triazole, and hydroxymethylbenzotriazole.

[0012] As a possible design, the inorganic chloride is at least one of ferric chloride, ammonium chloride, and potassium chloride.

[0013] As a possible design, the first inorganic acid further includes nitric acid and / or sulfuric acid.

[0014] As a possible design, the second inorganic acid further includes at least one of carbonic acid, phosphoric acid, formic acid and acetic acid.

[0015] As a possible design, the hydrochloric acid type P-ITO etching solution includes the following components in mass percentage:

[0016] 22% hydrochloric acid, 6% acetic acid, 0.3% benzotriazole, 0.05% inorganic chloride, the balance is water;

[0017] As a possible design, the hydrochloric acid type P-ITO etching solution includes the following components in mass percentage:

[0018] 22% hydrochloric acid, 6% acetic acid, 0.3% benzotriazole, 0.05% 5-aminotetrazole, 0.05% inorganic chloride, and the balance is water.

[0019] In a second aspect, the present application provides a method for preparing a hydrochloric acid-based P-ITO etching solution, comprising the following steps:

[0020] Add a portion of the first inorganic acid aqueous solution into water for dilution, and control the temperature to be ≤40°C;

[0021] Mixing the diluted first inorganic acid solution with the metal corrosion inhibitor, and stirring to obtain a mixed solution 1;

[0022] Add the remaining first inorganic acid aqueous solution into water for dilution, and control the temperature to ≤40°C;

[0023] The diluted first inorganic acid solution is mixed evenly with the mixed solution 1, and then the second inorganic acid is added and mixed evenly, and finally the inorganic chloride is added and mixed evenly.

[0024] As a possible design, the mixing process adopts pneumatic circulation.

[0025] The beneficial effects of the present invention are:

[0026] 1. The hydrochloric acid-type P-ITO etching solution of the present invention uses hydrochloric acid and acetic acid as main components, and metal corrosion inhibitors and inorganic chlorides as additives. It has low cost, mild etching reaction, uniform etching, no obvious edge jaggedness (CD Loss is 0.15μm to 0.25μm, compatible with various film thicknesses to meet customer needs), no ITO crystal residue, no damage to metal Mo, no polluting elements such as phosphorus, and is green and environmentally friendly.

[0027] 2. Compared with the "one-step" mixing preparation method, the preparation method disclosed in the present invention produces an ITO etching solution that is uniform and stable, not prone to crystallization and stratification, and has a short total preparation time. It will not clog the mixing kettle and its accessories, thus saving manufacturing costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the embodiments or descriptions of the prior art. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0029] Figure 1 In the embodiment of the present application, Example 1 is in P-ITO Topography of the substrate after etching;

[0030] Figure 2 In the embodiment of the present application, Example 1 is in P-ITO The corrosion condition of the substrate after etching;

[0031] Figure 3 In the embodiment of the present application, Example 1 is in P-ITO SEM morphology of the substrate after etching;

[0032] Figure 4 In the embodiment of the present application, Example 1 is in α-ITO Topography of the substrate after ACT etching;

[0033] Figure 5 In the embodiment of the present application, Example 1 is in α-ITO Topography of the substrate after ACR etching;

[0034] Figure 6 In the embodiment 2 of the present application, the P-ITO SEM morphology of the substrate after etching;

[0035] Figure 7 In the embodiment of the present application, Example 3 is in P-ITO SEM morphology of the substrate after etching;

[0036] Figure 8 In the embodiment of the present application, Example 4 is in P-ITO SEM morphology of the substrate after etching;

[0037] Figure 9 In the embodiment of the present application, Example 5 is in P-ITO SEM morphology of the substrate after etching;

[0038] Figure 10 In the embodiment of the present application, Example 6 is in P-ITO SEM morphology of the substrate after etching;

[0039] Figure 11 In the embodiment of the present application, Example 7 is in P-ITO SEM morphology of the substrate after etching;

[0040] Figure 12 In the embodiment of the present application, Example 8 is in P-ITO SEM morphology of the substrate after etching;

[0041] Figure 13 The comparative example 1 in the embodiment of the present application is P-ITO SEM morphology of the substrate after etching;

[0042] Figure 14 The comparative example 2 in the embodiment of the present application is P-ITO SEM morphology of the substrate after etching;

[0043] Figure 15 The comparative example 3 in the present application embodiment is P-ITO SEM morphology of the substrate after etching;

[0044] Figure 16 The comparative example 4 in the present application embodiment is P-ITO SEM morphology of the substrate after etching;

[0045] Figure 17 The comparative example 5 in the embodiment of the present application is P-ITO SEM morphology of the substrate after etching;

[0046] Figure 18 The comparative example 6 in the present application embodiment is P-ITO SEM morphology of the substrate after etching;

[0047] Figure 19 The comparative example 7 in the present application embodiment is P-ITO SEM morphology of the substrate after etching;

[0048] Figure 20 The comparative example 8 in the present application embodiment is P-ITO SEM morphology of the substrate after etching. DETAILED DESCRIPTION

[0049] In order to make the technical problems, technical solutions and beneficial effects to be solved by this application more clearly understood, the present application is further described in detail below in conjunction with the embodiments. It should be understood that the specific embodiments described herein are only used to explain this application and are not intended to limit this application.

[0050] In this application, the term "and / or" describes the relationship between associated objects, indicating that three possible relationships exist. For example, A and / or B can represent: A exists alone, A and B exist simultaneously, and B exists alone. A and B can be singular or plural. The character " / " generally indicates that the associated objects are in an "or" relationship.

[0051] In this application, "at least one" means one or more, and "more than one" means two or more. "At least one of the following" or similar expressions refers to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b, or c", or "at least one of a, b, and c" can all mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, and c can be single or multiple.

[0052] It should be understood that in the various embodiments of the present application, the size of the serial numbers of the above-mentioned processes does not mean the order of execution. Some or all of the steps can be executed in parallel or sequentially. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present application.

[0053] The terms used in the embodiments of the present application are for the purpose of describing specific embodiments only and are not intended to limit the present application. The singular forms "a", "an", "the" and "the" used in the embodiments of the present application and the appended claims are also intended to include plural forms unless the context clearly indicates otherwise.

[0054] The terms "first" and "second" are used solely for descriptive purposes to distinguish objects, such as substances, from one another and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the technical features being referred to. For example, a first XX could also be referred to as a second XX, and similarly, a second XX could also be referred to as a first XX, without departing from the scope of the embodiments of this application. Thus, features defined as "first" or "second" may explicitly or implicitly include one or more of such features.

[0055] The following describes the details in conjunction with specific embodiments.

[0056] Example 1

[0057] This embodiment discloses a hydrochloric acid-based P-ITO etching solution, comprising the following components in percentage by mass:

[0058] 22% hydrochloric acid aqueous solution, 6% acetic acid, 0.3% benzotriazole, 0.05% ferric chloride, and the balance is water; the concentration of the hydrochloric acid aqueous solution is 40wt%.

[0059] This embodiment also discloses a method for preparing a hydrochloric acid-based P-ITO etching solution, which is a two-step method, as follows:

[0060] Step 1: Prepare the dissolving additive solution, including the following steps:

[0061] 1) First, add 7% of pure water by weight into the mixing barrel, then slowly add 5% of hydrochloric acid by weight, control the temperature to ≤40℃, and mix well;

[0062] 2) Slowly add benzotriazole and stir to mix evenly to prepare solution 1 for later use;

[0063] Step 2: Assembling the finished ITO etching solution, including the following steps:

[0064] 1) First, add the remaining amount of pure water into the mixing kettle / tank, then slowly add the remaining amount of hydrochloric acid, control the temperature ≤40℃, and mix well;

[0065] 2) adding solution 1 prepared in step 1 and pneumatically circulating evenly;

[0066] 3) Add acetic acid and circulate evenly with pneumatic force;

[0067] 4) adding ferric chloride and pneumatically circulating the mixture evenly to obtain the hydrochloric acid type P-ITO etching solution.

[0068] The hydrochloric acid type P-ITO etching solution prepared in this embodiment was stored at 2-10° C. without crystallization or stratification.

[0069] Example 2

[0070] Compared with Example 1, the main difference is the mass percentage of each substance, and the other aspects are the same, as follows:

[0071] A hydrochloric acid type P-ITO etching solution comprises the following components in percentage by mass:

[0072] 22% hydrochloric acid aqueous solution, 7% acetic acid, 0.35% benzotriazole, 0.08% ferric chloride, and the balance is water; the concentration of the hydrochloric acid aqueous solution is 40wt%.

[0073] Example 3

[0074] Compared with Example 1, the main difference is the mass percentage of each substance, and the other aspects are the same, as follows:

[0075] A hydrochloric acid type P-ITO etching solution comprises the following components in percentage by mass:

[0076] 24% hydrochloric acid aqueous solution, 7% acetic acid, 0.5% benzotriazole, 0.05% ferric chloride, and the balance is water; the concentration of the hydrochloric acid aqueous solution is 40wt%.

[0077] Example 4

[0078] Compared with Example 1, the main difference is the mass percentage of each substance, and the other aspects are the same, as follows:

[0079] A hydrochloric acid type P-ITO etching solution comprises the following components in percentage by mass:

[0080] 20% hydrochloric acid aqueous solution, 6% acetic acid, 0.20% benzotriazole, 0.03% ferric chloride, and the balance is water; the concentration of the hydrochloric acid aqueous solution is 40wt%.

[0081] Example 5

[0082] Compared with Example 1, the main difference is the mass percentage of each substance, and the other aspects are the same, as follows:

[0083] A hydrochloric acid type P-ITO etching solution comprises the following components in percentage by mass:

[0084] 21% hydrochloric acid aqueous solution, 6% acetic acid, 0.40% benzotriazole, 0.05% ferric chloride, the balance being water;

[0085] The concentration of the hydrochloric acid aqueous solution was 40 wt%.

[0086] Example 6

[0087] Compared with Example 1, the main difference is the mass percentage of each substance, and the other aspects are the same, as follows:

[0088] A hydrochloric acid type P-ITO etching solution comprises the following components in percentage by mass:

[0089] 23% aqueous hydrochloric acid, 5% acetic acid, 0.20% benzotriazole, 0.06% ferric chloride, the balance being water;

[0090] The concentration of the hydrochloric acid aqueous solution was 40 wt%.

[0091] Example 7

[0092] Compared with Example 1, the main difference is the mass percentage of each substance, and the other aspects are the same, as follows:

[0093] A hydrochloric acid type P-ITO etching solution comprises the following components in percentage by mass:

[0094] 22% hydrochloric acid aqueous solution, 6% acetic acid, 0.30% benzotriazole, 0.05% 5-aminotetrazole, 0.05% ferric chloride, and the balance is water; the concentration of the hydrochloric acid aqueous solution is 40wt%.

[0095] Example 8

[0096] A hydrochloric acid type P-ITO etching solution comprises the following components in percentage by mass:

[0097] 20% hydrochloric acid aqueous solution, 5% acetic acid, 0.30% benzotriazole, 0.11% 5-aminotetrazole, 0.001% ferric chloride, and the balance is water; the concentration of the hydrochloric acid aqueous solution is 40wt%.

[0098] Comparative Example 1

[0099] Compared with Example 1, the main difference is the mass percentage of each substance, and the others are the same, as follows:

[0100] A P-ITO etching solution comprises the following components in percentage by mass:

[0101] 35% hydrochloric acid aqueous solution, 15% acetic acid, 3% benzotriazole, 0.50% ferric chloride, and the balance is water; the concentration of the hydrochloric acid aqueous solution is 40wt%.

[0102] Comparative Example 2

[0103] Compared with Example 1, the main difference is the mass percentage of each substance, and the others are the same, as follows:

[0104] A P-ITO etching solution comprises the following components in percentage by weight: 22% hydrochloric acid aqueous solution, 6% acetic acid, and the balance water; the concentration of the hydrochloric acid aqueous solution is 40wt%.

[0105] Comparative Example 3

[0106] Compared with Example 1, the main difference is the mass percentage of each substance, and the others are the same, as follows:

[0107] A P-ITO etching solution comprises the following components in percentage by mass:

[0108] 35% hydrochloric acid aqueous solution, 6% acetic acid, 0.3% benzotriazole, and the balance is water; the concentration of the hydrochloric acid aqueous solution is 40wt%.

[0109] Comparative Example 4

[0110] Compared with Example 1, the main difference is the mass percentage of each substance, and the others are the same, as follows:

[0111] A P-ITO etching solution comprises the following components in percentage by mass:

[0112] 22% hydrochloric acid aqueous solution, 6% acetic acid, 0.30% 5-aminotetrazole, 0.05% HNO3 aqueous solution, the balance is water; the concentration of the hydrochloric acid aqueous solution is 40wt%, and the concentration of the nitric acid aqueous solution is 70wt%.

[0113] Comparative Example 5

[0114] Compared with Example 1, the main difference is the mass percentage of each substance, and the others are the same, as follows:

[0115] A P-ITO etching solution comprises the following components in percentage by mass:

[0116] 19% hydrochloric acid aqueous solution, 3% acetic acid, 0.30% benzotriazole, 0.05% ferric chloride, and the balance is water; the concentration of the hydrochloric acid aqueous solution is 40wt%.

[0117] Comparative Example 6

[0118] Compared with Example 1, the main difference is the mass percentage of each substance, and the others are the same, as follows:

[0119] A P-ITO etching solution comprises the following components in percentage by mass:

[0120] 22% hydrochloric acid aqueous solution, 6% acetic acid, 0.5% glutamic acid, 0.05% ferric chloride, and the balance is water; the concentration of the hydrochloric acid aqueous solution is 40wt%.

[0121] Comparative Example 7

[0122] Compared with Example 1, the main difference is the mass percentage of each substance, and the others are the same, as follows:

[0123] A P-ITO etching solution comprises the following components in percentage by mass:

[0124] 22% hydrochloric acid aqueous solution, 0.30% benzotriazole, 6% HNO3, 0.08% ferric chloride, the balance being water; the concentration of the hydrochloric acid aqueous solution is 40wt%.

[0125] Comparative Example 8

[0126] Compared with Example 1, the main difference is the mass percentage of each substance, and the others are the same, as follows:

[0127] A P-ITO etching solution comprises the following components in percentage by mass:

[0128] 6% acetic acid, 0.30% benzotriazole, 0.05% ferric chloride, 22% H2SO4 aqueous solution, the balance being water; the concentration of the hydrochloric acid aqueous solution is 40wt%, and the concentration of the sulfuric acid aqueous solution is 98wt%.

[0129] Comparative Example 9

[0130] Compared with Example 1, the mass percentages of the substances are the same, but the preparation methods are different, as follows:

[0131] The preparation method of hydrochloric acid type P-ITO etching solution comprises the following steps:

[0132] 1) First, add pure water into the mixing barrel, then slowly add hydrochloric acid, control the temperature ≤ 40℃, and mix well;

[0133] 2) Slowly add benzotriazole and stir to mix evenly to prepare solution 1 for later use;

[0134] 3) pneumatically circulate solution 1 evenly;

[0135] 4) Add acetic acid and circulate evenly with pneumatic force;

[0136] 5) adding ferric chloride and pneumatically circulating the mixture evenly to obtain the hydrochloric acid type P-ITO etching solution.

[0137] The hydrochloric acid type P-ITO etching solution prepared in this comparative example exhibited crystallization and stratification when stored at 2-10°C.

[0138] Comparative Example 10

[0139] Compared with Comparative Example 9, the main difference is that the mass percentages of the various substances are different, and the rest are the same, as follows:

[0140] This comparative example discloses a hydrochloric acid-based P-ITO etching solution comprising the following components in percentage by mass:

[0141] 35% hydrochloric acid aqueous solution, 15% acetic acid, 3% benzotriazole, 0.50% ferric chloride, and the balance is water; the concentration of the hydrochloric acid aqueous solution is 40wt%.

[0142] The hydrochloric acid type P-ITO etching solution prepared in this comparative example exhibited crystallization and stratification when stored at 2-10°C.

[0143] The hydrochloric acid type P-ITO etching solution obtained in Examples 1-8 and Comparative Examples 1-9 was used to etch the substrate materials shown in Table 1. The etching method can be as follows:

[0144] 1) Immerse the P-ITO filmed substrate in the etching solution (Dip mode) or spray or pour the etching solution onto the P-ITO filmed substrate (Spray mode). Adjust the etching time based on the thickness of the P-ITO film, the pressure of the spraying solution, and the conveyor speed.

[0145] 2) The P-ITO film substrate after etching is cleaned with pure water, dried with an air knife or nitrogen gun, and observed by SEM. The CD loss (critical dimension loss), taper (etching angle), residue, and surface morphology of the P-ITO film after etching are measured and recorded.

[0146] Table 1

[0147]

[0148]

[0149] As shown in Table 1, the hydrochloric acid-based P-ITO etching solution disclosed in the present invention leaves no residue after etching on various types of P-ITO substrates, does not damage the metal Mo, and has no obvious edge jaggedness (CD Loss is 0.15 μm to 0.25 μm), and also has a suitable Taper.

[0150] Example 1 in P-ITO The morphology of the substrate after etching is as follows Figure 1 As shown in the figure, the corrosion situation is as follows Figure 2 As shown in the SEM morphology Figure 3 As shown; Example 1 in α-ITO The morphology of the substrate after ACT etching is as follows Figure 4 As shown; Example 1 in α-ITO The morphology of the substrate after ACR etching is shown in the figure below. Figure 5 shown.

[0151] The SEM morphologies of Examples 2-7 and Comparative Examples 1-8 after substrate etching are as follows: Figure 6-20 shown.

[0152] Depend on Figure 1-5As shown, the hydrochloric acid type etching solution disclosed in the present invention is suitable for etching on P-ITO substrates, but not suitable for etching on α-ITO substrates. Hydrochloric acid and acetic acid in the hydrochloric acid type etching solution disclosed in the present invention are essential for the etching effect.

[0153] The above description is only a preferred embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent replacements and improvements made within the spirit and principles of the present application should be included in the scope of protection of the present application.

Claims

1. A hydrochloric acid type P-ITO etching solution, characterized in that, The following components are included in mass percentage: 20-24% first inorganic acid aqueous solution, 5-7% second inorganic acid, 0.1-0.5% metal corrosion inhibitor, 0.001-0.1% inorganic chloride, and the balance is water; The first inorganic acid includes at least hydrochloric acid; the second inorganic acid includes at least acetic acid; The concentration of the first inorganic acid in the first inorganic acid aqueous solution is ≥40 wt %.

2. The hydrochloric acid type P-ITO etching solution according to claim 1, wherein The metal corrosion inhibitor is at least one of benzotriazole, 5-aminotetrazole, 1,2,4-triazole, benzopyrrole, 3-amino-1,2,4-triazole, 3,5-diamino-1,2,4-triazole, and hydroxymethylbenzotriazole.

3. The hydrochloric acid type P-ITO etching solution according to claim 1, wherein The inorganic chloride is at least one of ferric chloride, ammonium chloride and potassium chloride.

4. The hydrochloric acid type P-ITO etching solution according to claim 1, wherein The first inorganic acid further comprises nitric acid and / or sulfuric acid.

5. The hydrochloric acid type P-ITO etching solution according to claim 1, wherein The second inorganic acid further comprises at least one of carbonic acid, phosphoric acid, formic acid and acetic acid.

6. The hydrochloric acid type P-ITO etching solution according to any one of claims 1 to 5, wherein The hydrochloric acid type P-ITO etching solution includes the following components in percentage by mass: 22% hydrochloric acid, 6% acetic acid, 0.3% benzotriazole, 0.05% inorganic chloride, and the balance is water.

7. The hydrochloric acid type P-ITO etching solution according to claim 6, wherein The hydrochloric acid type P-ITO etching solution includes the following components in percentage by mass: 22% hydrochloric acid, 6% acetic acid, 0.3% benzotriazole, 0.05% 5-aminotetrazole, 0.05% inorganic chloride, and the balance is water.

8. A method for preparing the hydrochloric acid type P-ITO etching solution according to any one of claims 1 to 7, characterized in that: The preparation method comprises: Add a portion of the first inorganic acid aqueous solution into water for dilution, and control the temperature to be ≤40°C; Mixing the diluted first inorganic acid solution with the metal corrosion inhibitor, and stirring to obtain a mixed solution 1; Add the remaining first inorganic acid aqueous solution into water for dilution, and control the temperature to ≤40°C; The diluted first inorganic acid solution is mixed evenly with the mixed solution 1, and then the second inorganic acid is added and mixed evenly, and finally the inorganic chloride is added and mixed evenly.

9. The preparation method of hydrochloric acid type P-ITO etching solution according to claim 8, wherein The mixing process adopts pneumatic circulation method.

10. Use of the hydrochloric acid type P-ITO etching solution according to any one of claims 1 to 7 or the hydrochloric acid type P-ITO etching solution prepared by the preparation method of claim 8 or 9 in optoelectronic devices, characterized in that: The optoelectronic device includes a display screen, a touch panel and / or a solar cell.

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