Light-emitting device, and electronic apparatus and electronic equipment including same

Abstract

There is provided a light emitting device including an interlayer between a first electrode and a second electrode and including an emission layer, in which the emission layer includes a first emission layer, the interlayer includes m emission units and m-1 charge generation units each between adjacent emission units among the m emission units, m is an integer of 2 or more, the emission unit between the first electrode and the charge generation unit adjacent to the first electrode includes a first emission layer, the first emission layer includes a first quantum dot including cadmium (Cd), and m is an integer of 1 or more. The first quantum dot has an atomic ratio with respect to a total atom of the first quantum dot of about 0.001 to about 0.1, and the first quantum dot has a photoluminescence (PL) maintenance rate in a range of about 0.90 to about 1.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2023-0176771 filed in the Korean Intellectual Property Office on December 7, 2023, the entire contents of which are hereby incorporated by reference. Technical Field

[0003] One or more embodiments of the present disclosure relate to a light emitting device, and electronic equipment and electronic equipment including the light emitting device. Background Art

[0004] Self-emissive devices among light-emitting devices have wide viewing angles, high contrast, short response times, and excellent characteristics in terms of brightness, driving voltage, and response speed.

[0005] In a light-emitting device, a first electrode is on a substrate, and a hole transport region, an emissive layer, an electron transport region, and a second electrode are sequentially on the first electrode. Holes provided from the first electrode move toward the emissive layer through the hole transport region, and electrons provided from the second electrode move toward the emissive layer through the electron transport region. Carriers (such as holes and electrons) recombine in the emissive layer to produce excitons. These excitons transition from an excited state to a ground state, thereby generating light. Summary of the Invention

[0006] One or more embodiments of the present disclosure include a light emitting device, and electronic equipment and electronic equipment including the light emitting device.

[0007] Additional aspects of the embodiments will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the presented embodiments of the disclosure.

[0008] According to one or more embodiments, a light emitting device includes:

[0009] the first electrode,

[0010] a second electrode facing the first electrode, and

[0011] an interlayer between the first electrode and the second electrode and including an emitting layer,

[0012] The emission layer includes a first emission layer,

[0013] The interlayer includes m emission units and m-1 charge generation units, each between adjacent emission units among the m emission units.

[0014] m is an integer of 2 or greater,

[0015] an emission unit between the first electrode and a charge generation unit adjacent to the first electrode including a first emission layer,

[0016] The first emission layer includes a first quantum dot,

[0017] The first quantum dot includes cadmium (Cd) in an atomic ratio ranging from about 0.001 to about 0.1 with respect to total atoms of the first quantum dot, and

[0018] The first quantum dots have a photoluminescence (PL) maintenance ratio in a range of about 0.90 to about 1.

[0019] Another aspect of an embodiment of the present disclosure provides an electronic device including a light emitting device.

[0020] According to one or more embodiments, an electronic device includes a light emitting device. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The above and other aspects and features of certain embodiments of the present disclosure will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:

[0022] Figure 1 、 Figure 2 、 Figure 3 、 Figure 4A and Figure 4B Each is a schematic cross-sectional view of a structure of a light emitting device according to an embodiment;

[0023] Figure 5 and Figure 6 Each is a schematic cross-sectional view of a structure of an electronic device according to an embodiment;

[0024] Figure 7 、 Figure 8 、 Figures 9A to 9C each being a schematic diagram of a structure of an electronic device according to an embodiment; and

[0025] Figure 10 Graphs showing absorption spectra and PL spectra of quantum dots 1-1 to 1-3 and 2-2 used in Examples 1 and 2 and Comparative Examples 1 and 2. DETAILED DESCRIPTION

[0026] Reference will now be made in more detail to embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout. In this regard, the embodiments may have different forms and should not be construed as being limited to the description set forth herein. Accordingly, the embodiments are described below solely with reference to the figures to illustrate various aspects of the embodiments described herein. As used herein, the term "and / or" includes any and all combinations of one or more of the associated enumerated items. Throughout this disclosure, the expression "at least one of a, b, and c" refers to only a, only b, only c, both a and b, both a and c, both b and c, all of a, b, and c, or variations thereof.

[0027] Because the subject matter of the present disclosure can have various modified embodiments, example embodiments are illustrated in the drawings and described in the detailed description. When referring to the embodiments described with reference to the drawings, the effects and characteristics of the embodiments of the present disclosure and the methods for achieving these will be apparent. However, the subject matter of the present disclosure can be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein.

[0028] It will be understood that although the terms "first", "second", etc. used herein may be used to describe various components herein, these components should not be limited by these terms. These components are only used to distinguish one component from another.

[0029] Unless it has an obviously different meaning in the context, an expression used in the singular encompasses the expression in the plural.

[0030] It will be further understood that terms such as "include," "have," and "include" used herein indicate the presence of specified features or components, but do not preclude the presence or addition of one or more other features or components. For example, unless otherwise limited, terms such as "include" or "have" may refer to consisting of only the features or components described in the specification, or may further include other components.

[0031] In the following embodiments, when various components (such as layers, films, regions, plates, etc.) are referred to as being "on" another component (such as a layer, film, region, plate, etc.), this may include not only cases where the various components (such as layers, films, regions, plates, etc.) are "directly on" another component (such as a layer, film, region, plate, etc.), but also cases where other components may be placed between them. For convenience of explanation, the sizes of elements in the drawings may be exaggerated. In other words, because the sizes (such as thickness) of components may be arbitrarily illustrated in the drawings for convenience of explanation, the following embodiments are not limited thereto.

[0032] The term "Group I" as used herein may include Group IA elements and Group IB elements on the IUPAC periodic table, and the Group I elements may include, for example, silver (Ag) and copper (Cu), and the like.

[0033] The term "Group II" as used herein may include Group IIA elements and Group IIB elements on the IUPAC periodic table, and Group II elements include, for example, magnesium (Mg), calcium (Ca), zinc (Zn), cadmium (Cd), mercury (Hg), and the like.

[0034] The term "Group III" as used herein may include Group IIIA elements and Group IIIB elements on the IUPAC periodic table, and the Group III elements may include, for example, aluminum (Al), gallium (Ga), indium (In), and thallium (Tl), etc. The term "Group V" as used herein may include Group VA elements and Group VB elements on the IUPAC periodic table, and the Group V elements may include, for example, nitrogen (N), phosphorus (P), arsenic (As), and antimony (Sb), etc.

[0035] The term "Group VI" as used herein may include Group VIA elements and Group VIB elements on the IUPAC periodic table, and the Group VI elements may include, for example, oxygen (O), sulfur (S), selenium (Se), tellurium (Te), and the like.

[0036] The term "interlayer" as used herein refers to a single layer and / or multiple layers between a first electrode and a second electrode of a light emitting device.

[0037] Light-emitting device

[0038] A light emitting device according to an aspect of an embodiment includes:

[0039] a first electrode;

[0040] a second electrode facing the first electrode; and

[0041] an interlayer between the first electrode and the second electrode and including an emitting layer,

[0042] The emission layer includes a first emission layer,

[0043] The interlayer includes m emission units and m-1 charge generation units, each between adjacent emission units among the m emission units.

[0044] m is an integer of 2 or greater,

[0045] an emission unit between the first electrode and a charge generation unit adjacent to the first electrode including a first emission layer,

[0046] The first emission layer includes a first quantum dot,

[0047] The first quantum dot includes cadmium (Cd) in an atomic ratio ranging from about 0.001 to about 0.1 with respect to total atoms of the first quantum dot, and

[0048] The first quantum dots have a photoluminescence (PL) maintenance ratio in a range of about 0.90 to about 1.

[0049] In an embodiment, the light emitting device may include m-1 charge generation units, each between adjacent emission units among the m emission units.

[0050] In more detail, the (m-1)th charge generation unit may be included between the mth emission unit and the (m-1)th emission unit. Here, m may be a natural number of 2 or greater. For example, m may be a natural number selected from 2 to 10.

[0051] In an embodiment, m may be 2 or greater.

[0052] In one or more embodiments, m may be 3 or greater.

[0053] In one or more embodiments, m may be 2 or 3.

[0054] In an embodiment, when m is 2, a first electrode, a first emission unit, a first charge generation unit, a second emission unit, and a second electrode may be provided in sequence. Here, the first emission unit may emit a first color light, and the second emission unit may emit a second color light, wherein the maximum emission wavelength of the first color light and the maximum emission wavelength of the second color light may be the same as or different from each other.

[0055] In one or more embodiments, when m is 3, a first electrode, a first emission unit, a first charge generation unit, a second emission unit, a second charge generation unit, a third emission unit, and a second electrode may be provided in sequence. Here, the first emission unit may emit a first color light, the second emission unit may emit a second color light, and the third emission unit may emit a third color light, wherein the maximum emission wavelength of the first color light, the maximum emission wavelength of the second color light, and the maximum emission wavelength of the third color light may be the same as or different from each other.

[0056] In one or more embodiments, when m is 4, a first electrode, a first emission unit, a first charge generation unit, a second emission unit, a second charge generation unit, a third emission unit, a third charge generation unit, a fourth emission unit, and a second electrode may be provided in sequence. Here, the first emission unit may emit a first color light, the second emission unit may emit a second color light, the third emission unit may emit a third color light, and the fourth emission unit may emit a fourth color light, wherein the maximum emission wavelength of the first color light, the maximum emission wavelength of the second color light, the maximum emission wavelength of the third color light, and the maximum emission wavelength of the fourth color light may be the same as or different from each other.

[0057] In an embodiment, a maximum emission wavelength of light emitted from at least one selected from the m emission units may be different from a maximum emission wavelength of light emitted from at least one selected from the remaining emission units.

[0058] See also Figure 2 and Figure 3 , the m-th emission unit close to the first electrode 110 among the m emission units can be referred to as the m-th emission unit 145 (m).

[0059] Among the m emission units, the emission unit closest to the first electrode 110 is referred to as the first emission unit 145(1), and the emission unit farthest from the first electrode 110 is referred to as the mth emission unit 145(m), wherein the first emission unit 145(1) to the mth emission unit 145(m) are provided in sequence. In this regard, m-1 charge generation units 144(1) to 144(m-1) may be between the first electrode 110 and the mth emission unit 145(m).

[0060] In an embodiment, the emission layer may include a first emission layer.

[0061] In an embodiment, the first emission layer may include first quantum dots.

[0062] In an embodiment, the first quantum dot may include Cd in an atomic ratio ranging from about 0.001 to about 0.1 with respect to total atoms of the first quantum dot.

[0063] For example, the first quantum dot may include Cd in an atomic ratio relative to the total atoms of the first quantum dot in a range of about 0.001 to about 0.1, for example, in an atomic ratio relative to the total atoms of the first quantum dot in a range of about 0.002 to about 0.1, about 0.003 to about 0.1, about 0.004 to about 0.1, about 0.005 to about 0.1, about 0.006 to about 0.1, about 0.007 to about 0.1, about 0.008 to about 0.1, about 0.009 to about 0.1, about 0.01 to about 0.1, about 0.02 to about 0.1, about 0.03 to about 0.1, about 0.04 to about 0.1, about 0.05 to about 0.1, about 0.06 to about 0.1, about 0.07 to about 0.1, about 0.08 to about 0.1, about 0.09 to about 0.1, about 0.001 to about 0.09, about 0.002 to about 0.09, about 0.003 to about 0.09, about 0.004 to about 0.09, about 0.005 to about 0.09, about 0.006 to about 0.09, about 0.007 to about 0.09, about 0.008 to about 0.09, about 0.009 to about 0.09, about 0.01 to about 0.09, about 0.02 to about 0.09, about 0.03 to about 0.09, about 0.04 to about 0.09, about 0.05 to about 0.09, about 0.06 to about 0.09, about 0.07 to about 0.09, about 0.08 to about 0.09, about 0.001 to about 0.08, about 0.002 to about 0.09 .08, about 0.003 to about 0.08, about 0.004 to about 0.08, about 0.005 to about 0.08, about 0.006 to about 0.08, about 0.007 to about 0.08, about 0.008 to about 0.08, about 0.009 to about 0.08, about 0.01 to about 0.08, about 0.02 to about 0.08, about 0.03 to about 0.08, about 0.04 to about 0.08, about 0.05 to about 0.08, about 0.06 to about 0.08, about 0.07 to about 0.08, about 0.001 to about 0.07, about 0.002 to about 0.07, about 0.003 to about 0.07, about 0.004 to about 0.07, about 0.005 to about 0.07, about 0.006 to about 0.07, about 0.007 to about 0.07, about 0.008 to about 0.07, about 0.009 to about 0.07, about 0.01 to about 0.07, about 0.02 to about 0.07, about 0.03 to about 0.07, about 0.04 to about 0.07, about 0.05 to about 0.07, about 0.06 to about 0.07, about 0.001 to about 0.06, about 0.002 to about 0.06, about 0.003 to about 0.06, about 0.004 to about 0.06, about 0.005 to about 0.06, about 0.006 to about 0.06, about 0.007 to about 0.06, about 0.008 to about 0.06, about 0.009 to about 0.06, about 0.01 to about 0.06, about 0.0.05, about 0.01 to about 0.05, about 0.02 to about 0.06, about 0.03 to about 0.06, about 0.04 to about 0.06, about 0.05 to about 0.06, about 0.001 to about 0.05, about 0.002 to about 0.05, about 0.003 to about 0.05, about 0.004 to about 0.05, about 0.005 to about 0.05, about 0.006 to about 0.05, about 0.007 to about 0.05, about 0.008 to about 0.05, about 0.009 to about 0.05, about 0.01 to about 0.05, about 0.02 to about 0.05, about 0.03 to about 0.05, about 0.04 to about 0.05, about 0.001 to about 0.04, about 0.002 to about 0.04, about 0.003 to about 0.04, about 0.004 to about 0.04, about 0.005 to about 0.04, about 0.006 to about 0.04, about 0.007 to about 0.04, about 0.008 to about 0.04, about 0.009 to about 0.04, about 0.01 to about 0.04, about 0.02 to about 0.04, about 0.03 to about 0.04, about 0.001 to about 0.03, about 0.002 to about 0.03, about 0.003 to about 0.03, about 0.004 to about 0.03, about 0.005 to about 0.03, about 0.006 to about 0.03, about 0.007 to about 0.03, about 0.008 to about 0.03, about 0.009 to about 0.03, about 0.01 to about 0.03, about 0.02 to about 0.03, about 0.001 to about 0.02, about 0.002 to about 0.02, about 0.003 to about 0.02, about 0.004 to about 0.02, about 0.005 to about 0.02, about 0.006 to about 0.02, about 0.007 to about 0.02, about 0.008 to about 0.02, about 0.009 to about 0.02, about 0.01 to about 0.02, about 0.001 to about 0.01, about 0.002 to about 0.01, about 0.003 to about 0.01, about 0.004 to about 0.01, about 0.005 to about 0.01, about 0.006 to about 0.01, about 0.007 to about 0.01, about 0.008 to about 0.01, about 0.009 to about 0.0 1, about 0.001 to about 0.009, about 0.002 to about 0.009, about 0.003 to about 0.009, about 0.004 to about 0.009, about 0.005 to about 0.009, about 0.006 to about 0.009, about 0.007 to about 0.009, about 0.008 to about 0.009, about 0.001 to about 0.008, about 0.002 to about 0.008, about 0.003 to about 0.008, about 0.004 to about 0.008, about 0.005 to about 0.008, about 0.006 to about 0.008, about 0.007 to about 0.008, about 0.001 to about 0.007, about 0.002 to about 0.007, about 0.003 to about 0.00807, about 0.004 to about 0.007, about 0.005 to about 0.007, about 0.006 to about 0.007, about 0.001 to about 0.006, about 0.002 to about 0.006, about 0.003 to about 0.006, about 0.004 to about 0.006, about 0.005 to about 0.006, about 0.001 to about 0.005, about 0.002 to about 0.005, about 0.003 to about 0.005, about 0.004 to about 0.005, about 0.001 to about 0.004, about 0.002 to about 0.004, about 0.003 to about 0.004, about 0.001 to about 0.003, about 0.002 to about 0.003, or about 0.001 to about 0.002.

[0064] In an embodiment, the first quantum dot may include a Group II-VI semiconductor compound.

[0065] In an embodiment, the first quantum dot may include: a core; and a first shell covering the core.

[0066] In an embodiment, the core may include a first semiconductor compound represented by Formula 1:

[0067] Formula 1

[0068] Cd x A 1 1-x B 1 y C 1 1-y

[0069] In formula 1,

[0070] Among them, A 1 may be a Group II element other than Cd,

[0071] B 1 and C 1 may each independently be a Group VI element,

[0072] x may be greater than 0 but not greater than 0.15, and

[0073] y may be greater than 0 but not greater than 1.

[0074] In an embodiment, A 1 It can be Zn, Mg, Ca, Hg or any combination thereof.

[0075] In an embodiment, B in Formula 1 1 and C 1 They may be independently O, S, Se, Te or any combination thereof.

[0076] In an embodiment, A 1 Can be Zn or Mg, B 1 Can be S or Se, and C 1 Can be S or Se.

[0077] In an embodiment, the first shell may include a second semiconductor compound represented by Formula 2:

[0078] Formula 2

[0079] A 1 B 2 y B 3 1-y

[0080] In formula 2,

[0081] A 1 It can be a Group II element,

[0082] B 2 and B 3 may each independently be a Group VI element, and

[0083] y may be greater than or equal to 0 but less than or equal to 1.

[0084] In an embodiment, the first shell may include a second semiconductor compound, and the second semiconductor compound may be a Group II-VI semiconductor compound. For example, the second semiconductor compound may include ZnS.

[0085] In an embodiment, A included in the core 1 and A included in the first shell 1 They may be the same as or different from each other.

[0086] In an embodiment, B 1 and B 2 Can be the same as each other.

[0087] In an embodiment, Cd included in the core may be present in a uniform concentration or a non-uniform concentration.

[0088] In an embodiment, A included in the core 1 It can be present in a uniform concentration or a non-uniform concentration.

[0089] In an embodiment, B included in the core 1 and C 1 It can be present in a uniform concentration or a non-uniform concentration.

[0090] In an embodiment, the first case may not include Cd.

[0091] In an embodiment, the first shell may include a Group II-VI semiconductor compound.

[0092] In an embodiment, the first quantum dot may further include a second shell covering the first shell.

[0093] In an embodiment, the second case may not include Cd.

[0094] In an embodiment, the second shell may include a Group II-VI semiconductor compound.

[0095] In an embodiment, the first quantum dot may have a photoluminescence (PL) maintenance ratio in the range of about 0.90 to about 1.

[0096] In one or more embodiments, the PL maintenance ratio of the first quantum dots may be in a range of about 0.95 to about 1.

[0097] For example, the PL maintenance of the first quantum dot may be about 0.90 to about 1, about 0.91 to about 1, about 0.92 to about 1, about 0.93 to about 1, about 0.94 to about 1, about 0.95 to about 1, about 0.96 to about 1, about 0.97 to about 1, about 0.98 to about 1, about 0.99 to about 1, about 0.90 to about 0.99, about 0.91 to about 0.99, about 0.92 to about 0.99, about 0.93 to about 0.99, about 0.94 to about 0. .99, about 0.95 to about 0.99, about 0.96 to about 0.99, about 0.97 to about 0.99, about 0.98 to about 0.99, about 0.90 to about 0.98, about 0.91 to about 0.98, about 0.92 to about 0.98, about 0.93 to about 0.98, about 0.94 to about 0.98, about 0.95 to about 0.98, about 0.96 to about 0.98, about 0.97 to about 0.98, about 0.90 to about 0.97, about 0.98. 91 to about 0.97, about 0.92 to about 0.97, about 0.93 to about 0.97, about 0.94 to about 0.97, about 0.95 to about 0.97, about 0.96 to about 0.97, about 0.90 to about 0.96, about 0.91 to about 0.96, about 0.92 to about 0.96, about 0.93 to about 0.96, about 0.94 to about 0.96, about 0.95 to about 0.96, about 0.90 to about 0.95, about 0.91 to about 0.96. 95, about 0.92 to about 0.95, about 0.93 to about 0.95, about 0.94 to about 0.95, about 0.90 to about 0.94, about 0.91 to about 0.94, about 0.92 to about 0.94, about 0.93 to about 0.94, about 0.90 to about 0.93, about 0.91 to about 0.93, about 0.92 to about 0.93, about 0.90 to about 0.92, about 0.91 to about 0.92, or about 0.90 to about 0.91.

[0098] In an embodiment, the term "PL maintenance rate" as used herein refers to the ratio of the PL value after heat treatment to the initial PL value when the film is coated with the first quantum dots and heat-treated. For example, the "PL maintenance rate" can be calculated by measuring the PL value with a fluorescence spectrophotometer (F-7000, Hitachi) after the QD film is formed, and the QD film is formed by spin coating an ink in which the first quantum dots are dispersed in octane at a concentration of 40 mg / ml at 3,000 rpm for 20 seconds on glass and performing a baking process (i.e., heat treatment) on a hot plate at 140°C for 20 minutes.

[0099] In an embodiment, the PL maintenance rate may refer to a PL maintenance rate obtained by performing a baking process “three or more times” on a film coated with first quantum dots.

[0100] When the first emission layer according to an embodiment includes first quantum dots having a PL maintenance rate of 0.90 or greater, the first emission layer can have significantly improved thermal stability, and therefore, the light-emitting device including the first emission layer can also have improved stability, thereby enabling the manufacture of high-quality electronic devices and electronic equipment.

[0101] First embodiment

[0102] In an embodiment, the emission layer may include a first emission layer.

[0103] In one or more embodiments, the emission layer may further include a second emission layer and a third emission layer.

[0104] In an embodiment, at least one of the m emission units may include a first emission layer. For example, the m-th emission unit closest to the first electrode may include a first emission layer. For example, the first emission unit between the first electrode and the first charge generation unit adjacent to the first electrode, or the first emission unit closest to the first electrode may include a first emission layer.

[0105] In an embodiment, at least one selected from the m emission units may include a first emission layer, and at least one selected from the m emission units may include a second emission layer, and at least one selected from the m emission units may include a third emission layer.

[0106] In reference Figure 4A In an embodiment, m may be an integer of 3 or greater, and the interlayer may include a first emission unit, a first charge generating unit, a second emission unit, a second charge generating unit and a third emission unit provided in sequence, wherein the first emission unit may include a first emission layer (first EML), the second emission unit may include a second emission layer (second EML), and the third emission unit may include a third emission layer (third EML).

[0107] In an embodiment, the first emission layer may include a first quantum dot, the second emission layer may include a second quantum dot, and the third emission layer may include a third quantum dot.

[0108] In an embodiment, the second quantum dot and the third quantum dot may each independently include a Group III-V semiconductor compound.

[0109] In an embodiment, the Group III-V semiconductor compound may include GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, or any combination thereof.

[0110] In an embodiment, the second quantum dot and the third quantum dot may each independently include InN, InP, InAs, InSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, or any combination thereof.

[0111] In an embodiment, the second quantum dot and the third quantum dot may each independently further include a Group II-VI semiconductor compound.

[0112] In an embodiment, the Group II-VI semiconductor compound may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, or any combination thereof.

[0113] In an embodiment, the second quantum dot and the third quantum dot may each independently further include ZnS, ZnSe, ZnTe, ZnSeS, ZnSeTe, ZnSTe, or any combination thereof.

[0114] In an embodiment, the second quantum dot and the third quantum dot may each independently include: a core; a first shell covering the core; and a second shell covering the first shell.

[0115] The cores of the second quantum dot and the third quantum dot may each independently include a Group III-V semiconductor compound.

[0116] The first shell and the second shell of the second quantum dot and the third quantum dot may each independently include a Group II-VI semiconductor compound.

[0117] In an embodiment, a first electrode, a first emission unit, a first charge generation unit, a second emission unit, a second charge generation unit, a third emission unit, and a second electrode may be arranged in sequence. In an embodiment, the first emission unit may emit a first color light, the second emission unit may emit a second color light, and the third emission unit may emit a third color light, wherein the maximum emission wavelength of the first color light, the maximum emission wavelength of the second color light, and the maximum emission wavelength of the third color light may be different from each other.

[0118] In an embodiment, one selected from the first to third color lights may have a maximum emission wavelength in the range of about 410 nm to about 490 nm, one selected from the first to third color lights may have a maximum emission wavelength in the range of about 490 nm to about 550 nm, and one selected from the first to third color lights may have a maximum emission wavelength in the range of about 630 nm to about 700 nm.

[0119] In an embodiment, the first color light may be blue light, the second color light may be green light, and the third color light may be red light.

[0120] See also Figure 4A , a hole injection layer (HIL) and a hole transport layer (HTL) may be common layers between the first electrode (anode) 110 and the first emission layer, an electron transport layer (ETL) may be between the first emission layer and the charge generation unit (CGL) 144(1), and an additional electron transport layer (ETL) and / or electron injection layer (EIL) may be between the second emission layer and the second electrode (cathode) 150. The HIL, HTL, ETL, and EIL may be common layers.

[0121] Second embodiment

[0122] In an embodiment, the emission layer may include a first emission layer.

[0123] In one or more embodiments, the emission layer may further include a second 'emission layer'.

[0124] In an embodiment, at least one of the m emission units may include a first emission layer. For example, the m-th emission unit closest to the first electrode may include a first emission layer. For example, the first emission unit between the first electrode and the first charge generation unit adjacent to the first electrode, or the first emission unit closest to the first electrode may include a first emission layer.

[0125] In an embodiment, at least one selected from the m emission units may include a first emission layer, and at least one selected from the m emission units may include a second emission layer.

[0126] In reference Figure 4B In an embodiment, m may be an integer of 2 or greater, and the interlayer may include a first emission unit, a first charge generating unit, and a second 'emission unit' provided in sequence, wherein the first emission unit may include a first emission layer (first EML), and the second 'emission unit may include a second 'emission layer (second 'EML).

[0127] In an embodiment, the first emission layer may include first quantum dots, and the second emission layer may include second quantum dots.

[0128] In an embodiment, the second 'quantum dot' may include a Group II-VI semiconductor compound.

[0129] In an embodiment, the second 'quantum dot' may not include Cd.

[0130] In an embodiment, the Group II-VI semiconductor compound may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, or any combination thereof.

[0131] In an embodiment, the second 'quantum dot' may further include ZnS, ZnSe, ZnTe, ZnSeS, ZnSeTe, ZnSTe, or any combination thereof.

[0132] In an embodiment, the second 'quantum dot' may include a core, a first shell covering the core, and a second shell covering the first shell, wherein the core, the first shell, and the second shell may each independently include a Group II-VI semiconductor compound.

[0133] In an embodiment, a first electrode, a first emission unit, a first charge generating unit, a second emission unit, and a second electrode may be provided in sequence. In an embodiment, the first emission unit may emit a first color light, and the second emission unit may emit a second color light, wherein the maximum emission wavelength of the first color light and the maximum emission wavelength of the second color light may be the same as or different from each other.

[0134] In an embodiment, the first color light and the second color light may each independently have a maximum emission wavelength within a range of about 410 nm to about 490 nm.

[0135] In an embodiment, the first color light may be blue light, and the second color light may be blue light.

[0136] See also Figure 4B , the HIL and HTL may be common layers between the first electrode (anode) 110 and the first emission layer (first EML), the ETL may be between the first emission layer and the charge generation unit (CGL) 144 (1), and the ETL and / or EIL may be between the second emission layer (second EML) and the second electrode (cathode) 150. The HIL, HTL, ETL, and EIL may be common layers.

[0137] In one or more embodiments, the light emitting device may further include a capping layer outside the first electrode and / or outside the second electrode.

[0138] For example, the light emitting device may further include at least one selected from a first capping layer outside the first electrode and a second capping layer outside the second electrode. More details about the first capping layer and / or the second capping layer are the same as those described herein.

[0139] Another aspect of the embodiments provides an electronic device including a light-emitting device. The electronic device may further include a thin film transistor. For example, the electronic device may further include a thin film transistor including a source electrode and a drain electrode, wherein the first electrode of the light-emitting device may be electrically connected to the source electrode or the drain electrode. In embodiments, the electronic device may further include a color filter, a color conversion layer, a touch screen layer, a polarizing layer, or any combination thereof. Further details regarding the electronic device are the same as described herein.

[0140] Figure 1 、 Figure 2 、 Figure 3 、 Figure 4A and Figure 4B Description

[0141] Figure 1 、 Figure 2 、 Figure 3 、 Figure 4A and Figure 4B Each is a schematic cross-sectional view of a light emitting device 10 according to an embodiment. The light emitting device 10 includes a first electrode 110 , an interlayer 130 , and a second electrode 150 .

[0142] In the embodiments, see Figure 2 The interlayer 130 of the light-emitting device 10 may include m emission units 145(1)...145(m-1) and 145(m) and m-1 charge generation units 144(1)... and 144(m-1), each between adjacent emission units.

[0143] Figure 3 FIG. 1 shows a light emitting device 10 in the case where m is 4. Figure 3 In the light-emitting device 10, the interlayer 130 may include four emission units 145(1), 145(2), 145(3) and 145(4) and three charge generation units 144(1), 144(2) and 144(3), each between adjacent emission units.

[0144] Figure 4A : shows a light emitting device according to an embodiment in the case where m is 3. Figure 4A In the light-emitting device, the interlayer 130 may include three emission units 145(1), 145(2), and 145(3) and two charge generation units 144(1) and 144(2), respectively, between each adjacent emission unit. In an embodiment, the three emission units 145(1), 145(2), and 145(3) may each include a first emission layer (first EML), a second emission layer (second EML), and a third emission layer (third EML).

[0145] Figure 4B : shows a light emitting device according to an embodiment in the case where m is 2. Figure 4B In the light-emitting device, the interlayer 130 may include two emission units 145(1) and 145(2) and a charge generation unit 144(1) between adjacent emission units. In an embodiment, the two emission units 145(1) and 145(2) may each include a first emission layer (first EML) and a second emission layer (second EML).

[0146] First electrode 110

[0147] exist Figure 3In the embodiment, the substrate may be further below the first electrode 110 and / or on the second electrode 150. In an embodiment, a glass substrate and / or a plastic substrate may be used as the substrate. In one or more embodiments, the substrate may be a flexible substrate and may include a plastic having excellent heat resistance and durability, such as polyimide, polyethylene terephthalate (PET), polycarbonate, polyethylene naphthalate, polyarylate (PAR), polyetherimide, or any combination thereof.

[0148] The first electrode 110 may be formed, for example, by depositing and / or sputtering a material onto a substrate. When the first electrode 110 is an anode, the material may be a high work function material that facilitates hole injection.

[0149] The first electrode 110 may be a reflective electrode, a transflective electrode, or a transmissive electrode. In an embodiment, when the first electrode 110 is a transmissive electrode, the material used to form the first electrode 110 may include indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO2), zinc oxide (ZnO), or any combination thereof. In one or more embodiments, when the first electrode 110 is a transflective electrode or a reflective electrode, the material used to form the first electrode 110 may include magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), or any combination thereof.

[0150] The first electrode 110 may have a single-layer structure consisting of a single layer, or a multi-layer structure including a plurality of layers. For example, the first electrode 110 may have a three-layer structure of ITO / Ag / ITO.

[0151] Interlayer 130

[0152] The interlayer 130 is on the first electrode 110. The interlayer 130 may include an emission layer.

[0153] The interlayer 130 may further include: a hole transport region between the first electrode 110 and the emission layer; and an electron transport region between the emission layer and the second electrode 150 .

[0154] In addition to various appropriate organic materials, the interlayer 130 may further include metal-containing compounds (such as organometallic compounds) and / or inorganic materials (such as quantum dots), etc.

[0155] In an embodiment, the interlayer 130 may include i) two or more emission units sequentially stacked between the first electrode 110 and the second electrode 150, and ii) a charge generation unit between the two emission units. When the interlayer 130 includes the two or more emission units and the charge generation unit therebetween, the light-emitting device 10 may be a tandem light-emitting device.

[0156] Hole transport region in interlayer 130

[0157] The hole transport region may have i) a single-layer structure consisting of a single layer (composed of a single material), ii) a single-layer structure consisting of a single layer (composed of multiple materials different from each other), or iii) a multilayer structure including multiple layers (including multiple materials different from each other).

[0158] The hole transport region may include a hole injection layer, a hole transport layer, an emission assisting layer, an electron blocking layer, or any combination thereof.

[0159] For example, the hole transport region may have a multi-layer structure, including a hole injection layer / hole transport layer structure, a hole injection layer / hole transport layer / emission assisting layer structure, a hole injection layer / emission assisting layer structure, a hole transport layer / emission assisting layer structure or a hole injection layer / hole transport layer / emission assisting layer structure, wherein the layers in each structure are stacked sequentially starting from the first electrode 110.

[0160] The hole transport region may include a compound represented by Formula 201, a compound represented by Formula 202, or any combination thereof:

[0161] Formula 201

[0162]

[0163] Formula 202

[0164]

[0165] Among them, in Equation 201 and Equation 202,

[0166] L 201 To L 204 may be independently unsubstituted or substituted with at least one R 10a Substituted C3-C 60 Carbocyclic groups are either unsubstituted or substituted with at least one R 10a Substituted C1-C 60 heterocyclic group,

[0167] L 205 Can be *-O-*', *-S-*', *-N(Q 201 )-*', unsubstituted or replaced by at least one R 10aSubstituted C1-C 20 Alkylene, unsubstituted or substituted with at least one R 10a Substituted C2-C 20 Alkenylene, unsubstituted or substituted with at least one R 10a Substituted C3-C 60 Carbocyclic groups are either unsubstituted or substituted with at least one R 10a Substituted C1-C 60 heterocyclic group,

[0168] xa1 to xa4 may each independently be an integer selected from 0 to 5,

[0169] xa5 may be an integer selected from 1 to 10,

[0170] R 201 to R 204 and Q 201 may be independently unsubstituted or substituted with at least one R 10a Substituted C3-C 60 Carbocyclic groups are either unsubstituted or substituted with at least one R 10a Substituted C1-C 60 heterocyclic group,

[0171] R 201 and R 202 may be optionally substituted by a single bond (eg, a single covalent bond), unsubstituted or substituted by at least one R 10a Substituted C1-C5 alkylene or unsubstituted or replaced by at least one R 10a The substituted C2-C5 alkenylene groups are linked to each other to form an unsubstituted or substituted R 10a Replaced C8-C 60 Polycyclic groups (e.g., carbazolyl, etc.) (e.g., compound HT16, etc.),

[0172] R 203 and R 204 may be optionally substituted by a single bond (eg, a single covalent bond), unsubstituted or substituted by at least one R 10a Substituted C1-C5 alkylene or unsubstituted or replaced by at least one R 10a The substituted C2-C5 alkenylene groups are linked to each other to form an unsubstituted or substituted R 10a Replaced C8-C 60 polycyclic groups, and

[0173] na1 may be an integer selected from 1 to 4.

[0174] For example, each of Formula 201 and Formula 202 may include at least one selected from the groups represented by Formulas CY201 to CY217:

[0175]

[0176] Among them, in formula CY201 to formula CY217, R 10b and R 10c Can be compared with reference R 10a Same as described, CY 201 To Ring CY 204 Can be independently C3-C 20 Carbocyclic or C1-C 20 heterocyclic group, and at least one hydrogen in Formula CY201 to Formula CY217 may be unsubstituted or replaced by R 10a replace.

[0177] In an embodiment, in Formula CY201 to Formula CY217, ring CY 201 To Ring CY 204 Each independently may be phenyl, naphthyl, phenanthryl or anthracenyl.

[0178] In one or more embodiments, each of Formula 201 and Formula 202 may include at least one selected from the groups represented by Formulas CY201 to CY203.

[0179] In one or more embodiments, Formula 201 may include at least one selected from the group represented by Formulas CY201 to CY203 and at least one selected from the group represented by Formulas CY204 to CY217.

[0180] In one or more embodiments, in Formula 201, xa1 may be 1, R 201 may be one selected from the groups represented by formula CY201 to formula CY203, xa2 may be 0, and R 202 It may be one selected from the groups represented by one of Formulas CY204 to CY207.

[0181] In one or more embodiments, each of Formula 201 and Formula 202 may not include the groups represented by Formulas CY201 to CY203.

[0182] In one or more embodiments, each of Formula 201 and Formula 202 may not include the groups represented by Formula CY201 to Formula CY203, and may include at least one selected from the groups represented by Formula CY204 to Formula CY217.

[0183] In one or more embodiments, each of Formula 201 and Formula 202 may not include the groups represented by Formulas CY201 to CY217.

[0184] For example, the hole transport region may include: one selected from Compound HT1 to Compound HT46; m-MTDATA; TDATA; 2-TNATA; NPB (NPD); β-NPB; TPD; spiro-TPD; spiro-NPB; methylated NPB; TAPC; HMTPD; 4,4',4"-tris(N-carbazolyl)triphenylamine (TCTA); polyaniline / dodecylbenzenesulfonic acid (PANI / DBSA); poly(3,4-ethylenedioxythiophene) / poly(4-styrenesulfonate) (PEDOT / PSS); polyaniline / camphorsulfonic acid (PANI / CSA); polyaniline / poly(4-styrenesulfonate) (PANI / PSS); poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butyl)phenyl)diphenylamine)] (TFB) or any combination thereof:

[0185]

[0186]

[0187]

[0188]

[0189]

[0190] The thickness of the hole transport region can be about to about (For example, about to about When the hole transport region includes a hole injection layer, a hole transport layer, or any combination thereof, the thickness of the hole injection layer may be about to about (For example, about to about ), and the thickness of the hole transport layer can be in the range of about to about (For example, about to about When the thicknesses of the hole transport region, the hole injection layer, and the hole transport layer are within these ranges, appropriate or satisfactory hole transport characteristics can be obtained without significantly increasing the driving voltage.

[0191] The emission-assisting layer can increase light emission efficiency by compensating the optical resonance distance according to the wavelength of light emitted by the emission layer, and the electron blocking layer can block or reduce the leakage of electrons from the emission layer to the hole transport region. Materials that can be included in the hole transport region can be included in the emission-assisting layer and the electron blocking layer.

[0192] p-dopant

[0193] In addition to the aforementioned materials, the hole transport region may further include a charge generation material for improving conductive properties (e.g., electrical conductivity). The charge generation material may be dispersed uniformly or non-uniformly (e.g., in the form of a single layer composed of the charge generation material) in the hole transport region.

[0194] The charge generating material may be, for example, a p-dopant.

[0195] For example, the p-dopant may have a lowest unoccupied molecular orbital (LUMO) energy level of -3.5 eV or less.

[0196] In an embodiment, the p-dopant may include a quinone derivative, a cyano group-containing compound, a compound including the element EL1 and the element EL2, or any combination thereof.

[0197] Examples of the quinone derivative may include TCNQ, F4-TCNQ, and the like.

[0198] Examples of the cyano group-containing compound may include HAT-CN and a compound represented by Formula 221, and the like:

[0199]

[0200] Formula 221

[0201]

[0202] Where, in formula 221,

[0203] R 221 to R 223 may be independently unsubstituted or substituted with at least one R 10a Substituted C3-C 60 Carbocyclic groups are either unsubstituted or substituted with at least one R 10a Substituted C1-C 60 heterocyclic group, and

[0204] Selected from R 221 to R 223 At least one of them may be each independently C3-C 60 Carbocyclic or C1-C 60 Heterocyclic group: cyano; -F; -Cl; -Br; -I; C1-C ... 20 or any combination thereof.

[0205] In a compound including element EL1 and element EL2, element EL1 may be a metal, a metalloid, or any combination thereof, and element EL2 may be a nonmetal, a metalloid, or any combination thereof.

[0206] Examples of metals may include: alkali metals (e.g., lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), etc.); alkaline earth metals (e.g., beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), etc.); transition metals (e.g., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), technetium (Tc), rhenium (Re), iron (Fe), ruthenium (Ru), osmium (Os), cobalt ( Co), rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), platinum (Pt), copper (Cu), silver (Ag), gold (Au), etc.); late transition metals (e.g., zinc (Zn), indium (In), tin (Sn), etc.); and lanthanide metals (e.g., lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), etc.); etc.

[0207] Examples of metalloids may include silicon (Si), antimony (Sb), tellurium (Te), and the like.

[0208] Examples of non-metals may include oxygen (O), halogens (eg, F, Cl, Br, I, etc.), and the like.

[0209] For example, the compound including element EL1 and element EL2 may include metal oxides, metal halides (e.g., metal fluorides, metal chlorides, metal bromides, metal iodides, etc.), metalloid halides (e.g., metalloid fluorides, metalloid chlorides, metalloid bromides, metalloid iodides, etc.), metal tellurides, or any combination thereof.

[0210] Examples of metal oxides may include tungsten oxides (e.g., WO, W2O3, WO2, WO3, W2O5, etc.), vanadium oxides (e.g., VO, V2O3, VO2, V2O5, etc.), molybdenum oxides (e.g., MoO, Mo2O3, MoO2, MoO3, Mo2O5, etc.), and rhenium oxides (e.g., ReO3, etc.), etc.

[0211] Examples of the metal halide may include alkali metal halides, alkaline earth metal halides, transition metal halides, post-transition metal halides, lanthanide metal halides, and the like.

[0212] Examples of alkali metal halides may include LiF, NaF, KF, RbF, CsF, LiCl, NaCl, KCl, RbCl, CsCl, LiBr, NaBr, KBr, RbBr, CsBr, LiI, NaI, KI, RbI, CsI, and the like.

[0213] Examples of alkaline earth metal halides may include BeF2, MgF2, CaF2, SrF2, BaF2, BeCl2, MgCl2, CaCl2, SrCl2, BaCl2, BeBr2, MgBr2, CaBr2, SrBr2, BaBr2, BeI2, MgI2, CaI2, SrI2, and BaI2, etc.

[0214] Examples of transition metal halides may include titanium halides (e.g., TiF4, TiCl4, TiBr4, TiI4, etc.), zirconium halides (e.g., ZrF4, ZrCl4, ZrBr4, ZrI4, etc.), hafnium halides (e.g., HfF4, HfCl4, HfBr4, HfI4, etc.), vanadium halides (e.g., VF3, VCl3, VBr3, VI3, etc.), niobium halides (e.g., NbF3, NbCl3, NbBr3, NbI3, etc.), tantalum halides (e.g., TaF3, TaCl3, TaB r3, TaI3, etc.), chromium halides (e.g., CrF3, CrCl3, CrBr3, CrI3, etc.), molybdenum halides (e.g., MoF3, MoCl3, MoBr3, MoI3, etc.), tungsten halides (e.g., WF3, WCl3, WBr3, WI3, etc.), manganese halides (e.g., MnF2, MnCl2, MnBr2, MnI2, etc.), technetium halides (e.g., TcF2, TcCl2, TcBr2, TcI2, etc.), rhenium halides (e.g., ReF2, ReCl2, ReBr2, 2, etc.), iridium halides (e.g., IrF2, IrCl2, IrBr2, etc.), bismuth halides (e.g., CoF2, CoCl2, CoBr2, CoI2, etc.), iridium halides (e.g., IrF2, IrCl2, IrBr2, etc.), bismuth halides (e.g., IrF2, IrCl2, IrBr2, etc.), bismuth halides (e.g., IrF2, IrCl2, IrBr2, etc.), bismuth halides (e.g., IrF2, IrCl2, IrBr2, etc.), bismuth halides (e.g., IrF2, IrCl2, IrBr2, etc.), bismuth halides (e.g., IrF2, IrCl2, IrBr2, etc.), bismuth halides (e.g., IrF2, IrCl2, IrBr2, etc.), bismuth halides (e.g., Ir 2, IrI2, etc.), nickel halides (e.g., NiF2, NiCl2, NiBr2, NiI2, etc.), palladium halides (e.g., PdF2, PdCl2, PdBr2, PdI2, etc.), platinum halides (e.g., PtF2, PtCl2, PtBr2, PtI2, etc.), cuprous halides (e.g., CuF, CuCl, CuBr, CuI, etc.), silver halides (e.g., AgF, AgCl, AgBr, AgI, etc.), and gold halides (e.g., AuF, AuCl, AuBr, AuI, etc.), etc.

[0215] Examples of the late transition metal halide may include zinc halide (eg, ZnF2, ZnCl2, ZnBr2, ZnI2, etc.), indium halide (eg, InI3, etc.), tin halide (eg, SnI2, etc.), and the like.

[0216] Examples of lanthanide metal halides may include YbF, YbF2, YbF3, SmF3, YbCl, YbCl2, YbCl3, SmCl3, YbBr, YbBr2, YbBr3, SmBr3, YbI, YbI2, YbI3, and SmI3, among others.

[0217] Examples of the metalloid halide may include antimony halide (eg, SbCl 5 , etc.), and the like.

[0218] Examples of metal tellurides may include alkali metal tellurides (e.g., Li2Te, Na2Te, K2Te, Rb2Te, Cs2Te, etc.), alkaline earth metal tellurides (e.g., BeTe, MgTe, CaTe, SrTe, BaTe, etc.), transition metal tellurides (e.g., TiTe2, ZrTe2, HfTe2, V2Te3, Nb2Te3, Ta2Te3, Cr2Te3, Mo2Te3, W2Te3, MnTe, TcTe, ReTe, Fe Te, RuTe, OsTe, CoTe, RhTe, IrTe, NiTe, PdTe, PtTe, Cu2Te, CuTe, Ag2Te, AgTe, Au2Te, etc.), late transition metal tellurides (e.g., ZnTe, etc.) and lanthanide metal tellurides (e.g., LaTe, CeTe, PrTe, NdTe, PmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, etc.), etc.

[0219] Emission layer in interlayer 130

[0220] When the light-emitting device 10 is a full-color light-emitting device, the emission layer may be patterned into a red emission layer, a green emission layer, and / or a blue emission layer according to the sub-pixel. In an embodiment, the emission layer may have a stacked structure of two or more layers of a red emission layer, a green emission layer, and a blue emission layer, wherein the two or more layers are in contact with each other or separated from each other to emit white light. In one or more embodiments, the emission layer may include two or more materials of a red light-emitting material, a green light-emitting material, and a blue light-emitting material, wherein the two or more materials are mixed with each other in a single layer to emit white light.

[0221] In an embodiment, the emission layer may include a host and a dopant. The dopant may include a phosphorescent dopant, a fluorescent dopant, or any combination thereof.

[0222] The amount of the dopant in the emission layer may be in the range of about 0.01 parts by weight to about 15 parts by weight based on 100 parts by weight of the host.

[0223] In one or more embodiments, the emissive layer may include quantum dots.

[0224] In one or more embodiments, the emissive layer may include a delayed fluorescent material. The delayed fluorescent material may act as a host or a dopant in the emissive layer.

[0225] The thickness of the emission layer can be about to about (For example, about to about When the thickness of the emission layer is within these ranges, excellent light emitting characteristics can be obtained without significantly increasing the driving voltage.

[0226] main body

[0227] In an embodiment, the host may include a compound represented by Formula 301:

[0228] Formula 301

[0229] [Ar 301 ] xb11 -[(L 301 ) xb1 -R 301 ] xb21 ,

[0230] Wherein, in formula 301,

[0231] Ar 301 and L 301 may be independently unsubstituted or substituted with at least one R 10a Substituted C3-C 60 Carbocyclic groups are either unsubstituted or substituted with at least one R 10a Substituted C1-C 60 heterocyclic group,

[0232] xb11 can be 1, 2 or 3,

[0233] xb1 may be an integer selected from 0 to 5,

[0234] R 301 It can be hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, unsubstituted or replaced by at least one R 10a Substituted C1-C 60 Alkyl, unsubstituted or substituted with at least one R 10a Substituted C2-C 60 Alkenyl, unsubstituted or substituted with at least one R 10a Substituted C2-C60 Alkynyl, unsubstituted or substituted with at least one R 10a Substituted C1-C 60 Alkoxy, unsubstituted or substituted with at least one R 10a Substituted C3-C 60 Carbocyclic group, unsubstituted or substituted by at least one R 10a Substituted C1-C 60 Heterocyclic group, -Si(Q 301 )(Q 302 )(Q 303 )、-N(Q 301 )(Q 302 )、-B(Q 301 )(Q 302 ),-C(=O)(Q 301 )、-S(=O)2(Q 301 ) or -P(=O)(Q 301 )(Q 302 ),

[0235] xb21 may be an integer selected from 1 to 5, and

[0236] Q 301 To Q 303 Each and reference Q 11 Same as described.

[0237] For example, when xb11 in Formula 301 is 2 or greater, two or more Ar 301 Can be linked to each other via a single bond (eg, a single covalent bond).

[0238] In one or more embodiments, the host may include a compound represented by Formula 301-1, a compound represented by Formula 301-2, or any combination thereof:

[0239] Formula 301-1

[0240]

[0241] Formula 301-2

[0242]

[0243] In Formula 301-1 and Formula 301-2,

[0244] Ring A 301 To Ring A 304 may be independently unsubstituted or substituted with at least one R 10a Substituted C3-C 60 Carbocyclic groups are either unsubstituted or substituted with at least one R 10a Substituted C1-C 60 heterocyclic group,

[0245] X 301 Can be O, S, N[(L 304 ) xb4 -R 304 ]、C(R 304 )(R 305 ) or Si(R 304 )(R 305 ),

[0246] xb22 and xb23 can each independently be 0, 1 or 2,

[0247] L 301 , xb1 and R 301 each being the same as described herein,

[0248] L 302 To L 304 Each independently and reference L 301 Same as described,

[0249] xb2 to xb4 are each independently the same as described with reference to xb1, and

[0250] R 302 to R 305 and R 311 to R 314 Each is referred to herein as R 301 Same as described.

[0251] In one or more embodiments, the host may include an alkaline earth metal complex, a late transition metal complex, or any combination thereof. In one or more embodiments, the host may include a Be complex (e.g., compound H55), a Mg complex, a Zn complex, or any combination thereof.

[0252] In one or more embodiments, the host may include: one selected from Compound H1 to Compound H128; 9,10-di(2-naphthyl)anthracene (ADN); 2-methyl-9,10-bis(naphthalene-2-yl)anthracene (MADN); 9,10-di(2-naphthyl)-2-tert-butyl-anthracene (TBADN); 4,4'-bis(N-carbazolyl)-1,1'-biphenyl (CBP); 1,3-di(9-carbazolyl)benzene (mCP); 1,3,5-tri(carbazol-9-yl)benzene (TCP); or any combination thereof:

[0253]

[0254]

[0255]

[0256]

[0257]

[0258]

[0259]

[0260] Phosphorescent dopants

[0261] The phosphorescent dopant may include at least one transition metal as a central metal.

[0262] The phosphorescent dopant may include a monodentate ligand, a bidentate ligand, a tridentate ligand, a tetradentate ligand, a pentadentate ligand, a hexadentate ligand, or any combination thereof.

[0263] The phosphorescent dopant may be electrically neutral.

[0264] For example, the phosphorescent dopant may include an organometallic compound represented by Formula 401:

[0265] Formula 401

[0266] M(L 401 ) xc1 (L 402 ) xc2

[0267] Formula 402

[0268]

[0269] Among them, in formula 401 and formula 402,

[0270] M may be a transition metal (e.g., Ir, Pt, Pd, Os, Ti, Au, Hf, Eu, Tb, Rh, Re, or Tm),

[0271] L 401 may be a ligand represented by Formula 402, and xc1 may be 1, 2, or 3, wherein when xc1 is 2 or greater, two or more L 401 may be the same as or different from each other,

[0272] L 402 may be an organic ligand, and xc2 may be 0, 1, 2, 3 or 4, wherein when xc2 is 2 or greater, two or more L 402 may be the same as or different from each other,

[0273] X 401 and X 402 may each independently be nitrogen or carbon,

[0274] Ring A 401 and Ring A402 Can be independently C3-C 60 Carbocyclic or C1-C 60 heterocyclic group,

[0275] T 401 It can be a single bond (eg, a single covalent bond), *-O-*', *-S-*', *-C(=O)-*', *-N(Q 411 )-*'、*-C(Q 411 )(Q 412 )-*'、*-C(Q 411 )=C(Q 412 )-*'、*-C(Q 411 )=*' or *=C=*',

[0276] X 403 and X 404 Each of them can be independently a chemical bond (for example, a covalent bond or a coordinate bond, which can also be called a coordinate covalent bond or a coordinate bond), O, S, N (Q 413 )、B(Q 413 )、P(Q 413 )、C(Q 413 )(Q 414 ) or Si(Q 413 )(Q 414 ),

[0277] Q 411 To Q 414 Each and reference Q 11 Same as described,

[0278] R 401 and R 402 can be independently hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, unsubstituted or replaced by at least one R 10a Substituted C1-C 20 Alkyl, unsubstituted or substituted with at least one R 10a Substituted C1-C 20 Alkoxy, unsubstituted or substituted with at least one R 10a Substituted C3-C 60 Carbocyclic group, unsubstituted or substituted by at least one R 10a Substituted C1-C 60 Heterocyclic group, -Si(Q 401 )(Q 402 )(Q 403 )、-N(Q 401 )(Q 402 )、-B(Q 401 )(Q 402 ),-C(=O)(Q 401)、-S(=O)2(Q 401 ) or -P(=O)(Q 401 )(Q 402 ),

[0279] Q 401 To Q 403 Each and reference Q 11 Same as described,

[0280] xc11 and xc12 may each independently be an integer selected from 0 to 10, and

[0281] * and *' in Formula 402 each indicate a binding site with M in Formula 401.

[0282] For example, in Equation 402, i)X 401 Can be nitrogen and X 402 Can be carbon, or ii) X 401 and X 402 Each of may be nitrogen.

[0283] In an embodiment, when xc1 in Formula 401 is 2 or greater, two or more L 401 The two rings A 401 Optionally, T as a linker 402 connected to each other, and two or more L 401 The two rings A 402 Optionally, T as a linker 403 Connected to each other (see Compound PD1 to Compound PD4 and Compound PD7). 402 and T 403 Each with reference T 401 Same as described.

[0284] In formula 401, L 402 It can be an organic ligand. For example, L 402 It may include a halogen group, a diketone group (e.g., an acetylacetonate group), a carboxylic acid group (e.g., a picolinate group), -C(=O), an isonitrile group, a -CN group, a phosphorus-containing group (e.g., a phosphine group, a phosphite group, etc.), or any combination thereof.

[0285] The phosphorescent dopant may include, for example, one selected from Compound PD1 to Compound PD39 or any combination thereof:

[0286]

[0287]

[0288]

[0289] Fluorescent dopants

[0290] The fluorescent dopant may include an amine-containing compound, a styryl-containing compound, or any combination thereof.

[0291] For example, the fluorescent dopant may include a compound represented by Formula 501:

[0292] Formula 501

[0293]

[0294] Wherein, in formula 501,

[0295] Ar 501 、L 501 To L 503 、R 501 and R 502 may each independently include unsubstituted or substituted with at least one R 10a Substituted C3-C 60 Carbocyclic groups are either unsubstituted or substituted with at least one R 10a Substituted C1-C 60 heterocyclic group,

[0296] xd1 to xd3 may each independently be 0, 1, 2 or 3, and

[0297] xd4 can be 1, 2, 3, 4, 5 or 6.

[0298] For example, Ar in Formula 501 501 It may be a condensed ring group in which three or more monocyclic groups are condensed together (for example, anthracenyl, 1,2-triphenylenyl, pyrenyl, etc.).

[0299] For example, xd4 in equation 501 may be 2.

[0300] For example, the fluorescent dopant may include: one selected from Compound FD1 to Compound FD37; DPVBi; DPAVBi; or any combination thereof:

[0301]

[0302]

[0303]

[0304] Delayed fluorescence materials

[0305] The emissive layer may include a delayed fluorescent material.

[0306] In the present specification, the delayed fluorescent material may be selected from compounds capable of emitting delayed fluorescence based on a delayed fluorescence emission mechanism.

[0307] The delayed fluorescent material included in the emission layer may act as a host or a dopant depending on the types (or kinds) of other materials included in the emission layer.

[0308] In an embodiment, the difference between the triplet energy level (eV) of the delayed fluorescent material and the singlet energy level (eV) of the delayed fluorescent material may be in the range of about 0 eV to about 0.5 eV. When the difference between the triplet energy level (eV) of the delayed fluorescent material and the singlet energy level (eV) of the delayed fluorescent material satisfies the above range, up-conversion of the triplet state of the delayed fluorescent material to the singlet state may occur effectively, and thus, the light-emitting device 10 may have improved luminous efficiency.

[0309] For example, the delayed fluorescent material may include: i) at least one electron donor (eg, a π-electron-rich C3-C 60 Cyclic groups, such as carbazolyl, etc.) and at least one electron acceptor (e.g., sulfoxide, cyano, π-electron-deficient nitrogen-containing C1-C 60 cyclic groups, etc.), and ii) materials including C8-C8 in which two or more cyclic groups are fused together while sharing boron (B). 60 Polycyclic materials.

[0310] Examples of the delayed fluorescent material may include at least one selected from Compound DF1 to Compound DF14:

[0311]

[0312]

[0313] quantum dots

[0314] The emissive layer may include quantum dots.

[0315] As used herein, the term "quantum dot" refers to a crystal of a semiconductor compound and may include any suitable material capable of emitting light of various suitable emission wavelengths depending on the size of the crystal. Quantum dots can be made to emit light of various suitable emission wavelengths by adjusting the ratio of elements in the quantum dot compound.

[0316] The diameter of a quantum dot can be, for example, in the range of about 1 nm to about 10 nm.

[0317] Quantum dots may be synthesized by a wet chemical process, a metal organic chemical vapor deposition (MOCVD) process, a molecular beam epitaxy (MBE) process, and / or any suitable similar process.

[0318] The wet chemical process is a method that includes mixing precursor materials with an organic solvent and then growing quantum dot particle crystals. When the quantum dot particle crystals grow, the organic solvent naturally acts as a dispersant that coordinates on the surface of the quantum dot particle crystals and controls the growth of the quantum dot particle crystals. This allows the growth of the quantum dot particle crystals to be controlled by a process that is less expensive and easier than vapor deposition methods (such as metal organic chemical vapor deposition or molecular beam epitaxy).

[0319] Quantum dots may include: Group II-VI semiconductor compounds; Group III-V semiconductor compounds; Group III-VI semiconductor compounds; Group I-III-VI semiconductor compounds; Group IV-VI semiconductor compounds; Group IV elements or compounds; or any combination thereof.

[0320] Examples of II-VI semiconductor compounds may include binary compounds such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, and MgS; ternary compounds such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, Cd ZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe and MgZnS, etc.; quaternary compounds, such as CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, etc.; or any combination thereof.

[0321] Examples of Group III-V semiconductor compounds may include binary compounds such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, and / or InSb; ternary compounds such as GaNPs, GaNAs, GaNSb, GaPAs, GaPSb, AlNPs, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNPs, InAlP, InNAs, InNSb, InPAs, and / or InPSb; quaternary compounds such as GaAlNPs, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNPs, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNPs, InAlNAs, InAlNSb, InAlPAs, and / or InAlPSb; or any combination thereof. In embodiments, the Group III-V semiconductor compound may further include a Group II element. Examples of the Group III-V semiconductor compound further including a Group II element may include InZnP, InGaZnP, InAlZnP, and the like.

[0322] Examples of III-VI semiconductor compounds may include: binary compounds, such as GaS, GaSe, Ga2Se3, GaTe, InS, InSe, In2S3, In2Se3, InTe, etc.; ternary compounds, such as InGaS3, InGaSe3, etc.; or any combination thereof.

[0323] Examples of Group I-III-VI semiconductor compounds may include: ternary compounds, such as AgInS, AgInS2, AgInSe2, AgGaS, AgGaS2, AgGaSe2, CuInS, CuInS2, CuInSe2, CuGaS2, CuGaSe2, CuGaO2, AgGaO2, AgAlO2, etc.; quaternary compounds, such as AgInGaS2, AgInGaSe2, etc.; or any combination thereof.

[0324] Examples of Group IV-VI semiconductor compounds may include: binary compounds, such as SnS, SnSe, SnTe, PbS, PbSe or PbTe; ternary compounds, such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, etc.; quaternary compounds, such as SnPbSSe, SnPbSeTe, SnPbSTe, etc.; or any combination thereof.

[0325] The Group IV elements or compounds may include: single elements, such as Si, Ge, etc.; binary compounds, such as SiC, SiGe, etc.; or any combination thereof.

[0326] Each element included in a multi-element compound (such as a binary compound, a ternary compound, and a quaternary compound) may be present in a particle at a uniform concentration or a non-uniform concentration. For example, the chemical formula above refers to the type (or species) of elements included in the compound, and the ratio of elements in the compound may vary. For example, AgInGaS2 refers to AgInGaS2. x Ga 1-x S2 (where x is a real number greater than 0 and less than 1).

[0327] In one or more embodiments, the quantum dot may have a single structure in which the concentration of each element in the quantum dot is uniform (or substantially uniform), or the quantum dot may have a core-shell dual structure. For example, the material included in the core and the material included in the shell may be different from each other.

[0328] The shell of a quantum dot can act as a protective layer to prevent or reduce chemical degeneration of the core to maintain semiconductor properties, and / or as a charging layer to impart electrophoretic properties to the quantum dot. The shell can be monolayer or multilayer. The interface between the core and the first shell can have a concentration gradient, wherein the concentration of the element present in the first shell decreases toward the center of the core.

[0329] Examples of quantum dot shells may include: oxides of metals, metalloids, and / or non-metals; semiconductor compounds; or any combination thereof. Examples of metal, metalloid, and / or non-metal oxides may include: binary compounds such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, and NiO; ternary compounds such as MgAl2O4, CoFe2O4, NiFe2O4, and CoMn2O4; or any combination thereof. Examples of semiconductor compounds may include: as described above, Group II-VI semiconductor compounds; Group III-V semiconductor compounds; Group III-VI semiconductor compounds; Group I-III-VI semiconductor compounds; Group IV-VI semiconductor compounds; or any combination thereof. Examples of semiconductor compounds may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, or any combination thereof.

[0330] Each element included in the multi-element compound (such as binary compound and ternary compound) can be present in the particle with uniform or non-uniform concentration.For example, the chemical formula above refers to the type (or kind) of the element included in the compound, and the ratio of the elements in the compound can be appropriately changed.

[0331] The full width at half maximum (FWHM) of the emission wavelength spectrum of the quantum dot may be about 45 nm or less, for example, about 40 nm or less, and for example, about 30 nm or less, and within these ranges, the color purity and / or color reproducibility of the quantum dot may be improved. In embodiments, because light emitted by the quantum dot is emitted in all (or substantially all) directions, a wide viewing angle may be improved.

[0332] In embodiments, the quantum dots may be nanoparticles, nanotubes, nanowires, nanofibers, and / or nanoplates, etc., for example, in the form of spherical particles, pyramidal particles, multi-arm particles, and / or cubic particles.

[0333] By controlling the size of quantum dots, the energy band gap can be adjusted, allowing light with various suitable wavelength bands to be obtained from the emission layer including quantum dots. Accordingly, by using quantum dots of different sizes, a light-emitting device emitting light with various suitable wavelength bands can be realized. More specifically, the size of the quantum dots or the ratio of elements in the quantum dot compound can be selectively controlled to emit red, green, and / or blue light. In embodiments, the size of the quantum dots can be configured to emit white light using a combination of various suitable colors.

[0334] Electron transport region in interlayer 130

[0335] The electron transport region may have: i) a single-layer structure consisting of a single layer (composed of a single material), ii) a single-layer structure consisting of a single layer (composed of multiple materials different from each other), or iii) a multilayer structure including multiple layers (including multiple materials different from each other).

[0336] The electron transport region may include a buffer layer, a hole blocking layer, an electron control layer, an electron transport layer, an electron injection layer, or any combination thereof.

[0337] For example, the electron transport region may have an electron transport layer / electron injection layer structure, a hole blocking layer / electron transport layer / electron injection layer structure, an electron control layer / electron transport layer / electron injection layer structure, or a buffer layer / electron transport layer / electron injection layer structure, wherein the layers in each structure are stacked sequentially starting from the emission layer.

[0338] In an embodiment, the electron transport region (e.g., a buffer layer, a hole blocking layer, an electron control layer, or an electron transport layer in the electron transport region) may include a metal-free compound including at least one π-electron-deficient nitrogen-containing C1-C60 Cyclic group.

[0339] For example, the electron transport region may include a compound represented by Formula 601:

[0340] Formula 601

[0341] [Ar 601 ] xe11 -[(L 601 ) xe1 -R 601 ] xe21 ,

[0342] Wherein, in formula 601,

[0343] Ar 601 and L 601 may be independently unsubstituted or substituted with at least one R 10a Substituted C3-C 60 Carbocyclic groups are either unsubstituted or substituted with at least one R 10a Substituted C1-C 60 heterocyclic group,

[0344] xe11 can be 1, 2 or 3,

[0345] xe1 can be 0, 1, 2, 3, 4 or 5,

[0346] R 601 may be unsubstituted or substituted with at least one R 10a Substituted C3-C 60 Carbocyclic group, unsubstituted or substituted by at least one R 10a Substituted C1-C 60 Heterocyclic group, -Si(Q 601 )(Q 602 )(Q 603 ),-C(=O)(Q 601 )、-S(=O)2(Q 601 ) or -P(=O)(Q 601 )(Q 602 ),

[0347] Q 601 To Q 603 Each and reference Q 11 Same as described,

[0348] xe21 can be 1, 2, 3, 4, or 5, and

[0349] Ar 601 、L 601 and R 601 At least one of them may be independently unsubstituted or replaced by at least one R 10aSubstituted π-electron-deficient nitrogen-containing C1-C 60 Cyclic group.

[0350] For example, when xe11 in Formula 601 is 2 or greater, two or more Ar 601 Can be linked to each other via a single bond (eg, a single covalent bond).

[0351] In one or more embodiments, Ar in Formula 601 601 It may be unsubstituted or substituted with at least one R 10a substituted anthracenyl.

[0352] In one or more embodiments, the electron transport region may include a compound represented by Formula 601-1:

[0353] Formula 601-1

[0354]

[0355] Among them, in formula 601-1,

[0356] X 614 Can be N or C(R 614 ), X 615 Can be N or C(R 615 ), and X 616 Can be N or C(R 616 ), where X 614 To X 616 At least one of may be N,

[0357] L 611 To L 613 Each with reference L 601 Same as described,

[0358] xe611 to xe613 are each the same as described with reference to xe1,

[0359] R 611 to R 613 Each with reference R 601 Same as described, and

[0360] R 614 to R 616 can be independently hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C1-C 20 Alkyl, C1-C 20 Alkoxy, unsubstituted or substituted with at least one R 10a Substituted C3-C 60 Carbocyclic groups are either unsubstituted or substituted with at least one R 10a Substituted C1-C 60 Heterocyclic group.

[0361] For example, xe1 and xe611 to xe613 in Formula 601 and Formula 601-1 may each independently be 0, 1, or 2.

[0362] In one or more embodiments, the electron transport region may include: one selected from Compound ET1 to Compound ET45; 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP); 4,7-diphenyl-1,10-phenanthroline (Bphen); Alq3; BAlq; TAZ; NTAZ; or any combination thereof:

[0363]

[0364]

[0365]

[0366]

[0367] The thickness of the electron transport region can be about to about (For example, about to about When the electron transport region includes a buffer layer, a hole blocking layer, an electron control layer, an electron transport layer or any combination thereof, the thickness of the buffer layer, the hole blocking layer or the electron control layer may be independently about to about (For example, about to about ), and the thickness of the electron transport layer can be in the range of about to about (For example, about to about When the thickness of the buffer layer, the hole blocking layer, the electron control layer, the electron transport layer and / or the electron transport region is within these ranges, appropriate or satisfactory electron transport characteristics can be obtained without significantly increasing the driving voltage.

[0368] In addition to the aforementioned materials, the electron transport region (eg, an electron transport layer in the electron transport region) may further include a metal-containing material.

[0369] The metal-containing material may include undoped or metal-doped semiconductor oxide nanoparticles, alkali metal complexes, alkaline earth metal complexes, or any combination thereof. The undoped or metal-doped semiconductor oxide nanoparticles may be ZnO, TiO2, SnO2, ZnMgO, ZnAlO, and / or ZnLiO. The metal ions of the alkali metal complex may be Li ions, Na ions, K ions, Rb ions, and / or Cs ions, and the metal ions of the alkaline earth metal complex may be Be ions, Mg ions, Ca ions, Sr ions, and / or Ba ions. The ligand coordinated to the metal ions of the alkali metal complex or the alkaline earth metal complex may include hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthroline, cyclopentadiene, or any combination thereof.

[0370] For example, the metal-containing material may include a Li complex. The Li complex may include, for example, compound ET-D1(Liq) and / or compound ET-D2:

[0371]

[0372] The electron transport region may include an electron injection layer that facilitates injection of electrons from the second electrode 150. The electron injection layer may directly contact the second electrode 150.

[0373] The electron injection layer may have: i) a single-layer structure consisting of a single layer (composed of a single material), ii) a single-layer structure consisting of a single layer (composed of multiple materials different from each other), or iii) a multilayer structure including multiple layers (including multiple materials different from each other).

[0374] In an embodiment, the electron injection layer may include an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal-containing compound, an alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or any combination thereof.

[0375] Alkali metals may include Li, Na, K, Rb, Cs, or any combination thereof. Alkaline earth metals may include Mg, Ca, Sr, Ba, or any combination thereof. Rare earth metals may include Sc, Y, Ce, Tb, Yb, Gd, or any combination thereof.

[0376] The alkali metal-containing compounds, alkaline earth metal-containing compounds, and rare earth metal-containing compounds may be oxides, halides (eg, fluorides, chlorides, bromides, and / or iodides), and / or tellurides of alkali metals, alkaline earth metals, and rare earth metals, or any combination thereof.

[0377] The alkali metal compounds may include: alkali metal oxides such as Li2O, Cs2O, and / or K2O, etc.; alkali metal halides such as LiF, NaF, CsF, KF, LiI, NaI, CsI, and / or KI, etc.; or any combination thereof. The alkaline earth metal compounds may include alkaline earth metal oxides such as BaO, SrO, CaO, Ba x Sr 1-x O (where x is a real number satisfying 0 < x < 1) and / or Ba x Ca 1-x O (where x is a real number satisfying 0 < x < 1), etc. The rare earth metal compounds may include YbF3, ScF3, Sc2O3, Y2O3, Ce2O3, GdF3, TbF3, YbI3, ScI3, TbI3, or any combination thereof. In an embodiment, the rare earth metal compounds may include lanthanide metal tellurides. Examples of lanthanide metal tellurides may include LaTe, CeTe, PrTe, NdTe, PmTe, SmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, La2Te3, Ce2Te3, Pr2Te3, Nd2Te3, Pm2Te3, Sm2Te3, Eu2Te3, Gd2Te3, Tb2Te3, Dy2Te3, Ho2Te3, Er2Te3, Tm2Te3, Yb2Te3, and Lu2Te, etc.

[0378] The alkali metal complexes, alkaline earth metal complexes, and rare earth metal complexes may include i) one of alkali metal ions, alkaline earth metal ions, and rare earth metal ions, and ii) for example, hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyl oxazole, hydroxyphenyl thiazole, hydroxyphenyl oxadiazole, hydroxyphenyl thiadiazole, hydroxyphenyl pyridine, hydroxyphenyl benzimidazole, hydroxyphenyl benzothiazole, bipyridine, phenanthroline, cyclopentadiene, or any combination thereof as ligands bonded to the metal ions.

[0379] In an embodiment, the electron injection layer may be composed of: the alkali metals, alkaline earth metals, rare earth metals, alkali metal compounds, alkaline earth metal compounds, rare earth metal compounds, alkali metal complexes, alkaline earth metal complexes, rare earth metal complexes, or any combination thereof as described above. In one or more embodiments, the electron injection layer may further include an organic material (for example, a compound represented by Formula 601).

[0380] In one or more embodiments, the electron injection layer may be composed of: i) an alkali metal compound (e.g., an alkali metal halide), or ii) a) an alkali metal compound (e.g., an alkali metal halide), and b) an alkali metal, an alkaline earth metal, a rare earth metal, or any combination thereof. For example, the electron injection layer may be a KI:Yb co-deposited layer, a RbI:Yb co-deposited layer, and / or a LiF:Yb co-deposited layer.

[0381] When the electron injection layer further includes an organic material, alkali metals, alkaline earth metals, rare earth metals, alkali metal-containing compounds, alkaline earth metal-containing compounds, rare earth metal-containing compounds, alkali metal complexes, alkaline earth metal complexes, rare earth metal complexes, or any combination thereof may be uniformly or non-uniformly dispersed in the matrix including the organic material.

[0382] The thickness of the electron injection layer can be about to about (And for example, about to about When the thickness of the electron injection layer is within these ranges, appropriate or satisfactory electron injection characteristics can be obtained without significantly increasing the driving voltage.

[0383] Second electrode 150

[0384] In an embodiment, the second electrode 150 is on the interlayer 130 having the aforementioned structure. The second electrode 150 may be a cathode as an electron injection electrode, and may be formed using metals, alloys, conductive compounds, or any combination thereof each having a low work function.

[0385] The second electrode 150 may include Li, Ag, Mg, Al, Al-Li, Ca, Mg-In, Mg-Ag, Yb, Ag-Yb, ITO, IZO, or any combination thereof. The second electrode 150 may be a transmissive electrode, a semi-transmissive electrode, or a reflective electrode.

[0386] The second electrode 150 may have a single-layer structure or a multi-layer structure including a plurality of layers.

[0387] Capping layer

[0388] The first capping layer may be outside the first electrode 110 and / or the second capping layer may be outside the second electrode 150. In more detail, the light-emitting device 10 may have a structure in which the first capping layer, the first electrode 110, the interlayer 130, and the second electrode 150 are stacked sequentially in the order recited, a structure in which the first electrode 110, the interlayer 130, the second electrode 150 and the second capping layer are stacked sequentially in the order recited, or a structure in which the first capping layer, the first electrode 110, the interlayer 130, the second electrode 150 and the second capping layer are stacked sequentially in the order recited.

[0389] Light generated in the emission layer of the interlayer 130 of the light-emitting device 10 can be extracted toward the outside through the first electrode 110, which is a semi-transmissive electrode or a transmissive electrode, and the first capping layer. Light generated in the emission layer of the interlayer 130 of the light-emitting device 10 can be extracted toward the outside through the second electrode 150, which is a semi-transmissive electrode or a transmissive electrode, and the second capping layer.

[0390] The first capping layer and the second capping layer can increase external emission efficiency according to the principle of constructive interference, and accordingly, can increase light extraction efficiency of the light emitting device 10 and improve luminous efficiency of the light emitting device 10.

[0391] Each of the first capping layer and the second capping layer may include a material having a refractive index of 1.6 or greater (at a wavelength of 589 nm).

[0392] The first capping layer and the second capping layer may each independently be an organic capping layer including an organic material, an inorganic capping layer including an inorganic material, or an organic-inorganic composite capping layer including an organic material and an inorganic material.

[0393] At least one selected from the first capping layer and the second capping layer may each independently include a carbocyclic compound, a heterocyclic compound, an amino-containing compound, a porphyrin derivative, a phthalocyanine derivative, a naphthalocyanine derivative, an alkali metal complex, an alkaline earth metal complex, or any combination thereof. The carbocyclic compound, the heterocyclic compound, and the amino-containing compound may optionally be substituted with a substituent including O, N, S, Se, Si, F, Cl, Br, I, or any combination thereof. In an embodiment, at least one selected from the first capping layer and the second capping layer may each independently include an amino-containing compound.

[0394] In one or more embodiments, at least one selected from the first capping layer and the second capping layer may each independently include a compound represented by Formula 201, a compound represented by Formula 202, or any combination thereof.

[0395] In one or more embodiments, at least one selected from the first capping layer and the second capping layer may each independently include: one selected from compounds HT28 to HT33; one selected from compounds CP1 to CP6; β-NPB; or any combination thereof:

[0396]

[0397] membrane

[0398] The film may be, for example, an optical component (or light control tool) (e.g., a color filter, a color conversion component, a capping layer, a light extraction efficiency enhancing layer, a selective light absorption layer, a polarizing layer and / or a quantum dot containing layer, etc.), a light blocking component (e.g., a light reflecting layer and / or a light absorbing layer, etc.), a protective component (e.g., an insulating layer and / or a dielectric layer, etc.).

[0399] electronic devices

[0400] The light emitting device may be included in various suitable electronic devices. For example, the electronic device including the light emitting device may be a light emitting device or an authentication device.

[0401] In addition to the light-emitting device, an electronic device (e.g., a light-emitting device) may further include i) a color filter, ii) a color conversion layer, or iii) both a color filter and a color conversion layer. The color filter and / or the color conversion layer may be provided in at least one direction along which light emitted from the light-emitting device travels. For example, the light emitted from the light-emitting device may be blue light or white light. Details regarding the light-emitting device are the same as those described herein. In embodiments, the color conversion layer may include quantum dots. The quantum dots may be, for example, the aforementioned quantum dots.

[0402] The electronic device may include a first substrate, the first substrate may include a plurality of sub-pixel regions, the color filter may include a plurality of color filter regions respectively corresponding to the plurality of sub-pixel regions, and the color conversion layer may include a plurality of color conversion regions respectively corresponding to the plurality of sub-pixel regions.

[0403] A pixel defining layer may be provided between the plurality of sub-pixel regions to define each of the sub-pixel regions.

[0404] The color filter may further include a plurality of color filter regions and a light shielding pattern therebetween, and the color conversion layer may further include a plurality of color conversion regions and a light shielding pattern therebetween.

[0405] The plurality of color filter regions (or color conversion regions) may include: a first region emitting a first color of light; a second region emitting a second color of light; and / or a third region emitting a third color of light, wherein the first, second, and / or third color of light may have different maximum emission wavelengths. For example, the first color of light may be red, the second color of light may be green, and the third color of light may be blue. For example, the plurality of color filter regions (or color conversion regions) may include quantum dots. In embodiments, the first region may include red quantum dots, the second region may include green quantum dots, and the third region may not include quantum dots. Details regarding quantum dots are the same as those described herein. Each of the first, second, and third regions may further include a scattering agent (e.g., a light scatterer).

[0406] For example, in a light-emitting device that emits a first light, a first region may absorb the first light to emit a first-color light, a second region may absorb the first light to emit a second-color light, and a third region may absorb the first light to emit a third-color light. Here, the first-color light, the second-color light, and the third-color light may have different maximum emission wavelengths. In an embodiment, the first light may be blue light, the first-color light may be red light, the second-color light may be green light, and the third-color light may be blue light.

[0407] In addition to the aforementioned light-emitting device, the electronic device may further include a thin film transistor. The thin film transistor may include a source electrode, a drain electrode, and an active layer, wherein any one selected from the source electrode and the drain electrode may be electrically connected to any one selected from the first electrode and the second electrode of the light-emitting device.

[0408] The thin film transistor may further include a gate electrode and / or a gate insulating film, etc.

[0409] The active layer may include crystalline silicon, amorphous silicon, an organic semiconductor, and / or an oxide semiconductor, among others.

[0410] The electronic device may further include a sealing portion that seals the light-emitting device. The sealing portion may be between the color filter and / or color conversion layer and the light-emitting device. The sealing portion allows light from the light-emitting device to be extracted to the outside, and at the same time (e.g., simultaneously) prevents or reduces the penetration of ambient air and / or moisture into the light-emitting device. The sealing portion may be a sealing substrate including a transparent glass substrate and / or a plastic substrate. The sealing portion may be a thin-film encapsulation layer including at least one of an organic layer and an inorganic layer. When the sealing portion is a thin-film encapsulation layer, the electronic device may be flexible.

[0411] Depending on the intended use of the electronic device, various suitable functional layers may be formed on the sealing portion in addition to the color filter and / or color conversion layer. Examples of functional layers include a touch screen layer and a polarizing layer. The touch screen layer may be a pressure-sensitive touch screen layer, a capacitive touch screen layer, and / or an infrared touch screen layer. The authentication device may be, for example, a biometric authentication device that authenticates an individual using biometric information of a living being (e.g., a fingertip, pupil, etc.).

[0412] In addition to the light emitting device as described above, the authentication device may further include a biometric information collector.

[0413] The electronic device can be applied to various appropriate displays, light sources, lighting equipment, personal computers (e.g., mobile personal computers), mobile phones, digital cameras, electronic notebooks, electronic dictionaries, electronic game consoles, medical tools (e.g., electronic thermometers, blood pressure monitors, blood glucose meters, pulse measuring devices, pulse wave measuring devices, electrocardiogram displays, ultrasound diagnostic devices and / or endoscope displays), fish finders, various measuring tools, instruments (e.g., instruments for vehicles, aircraft and / or ships) and / or projectors, etc.

[0414] electronic equipment

[0415] The light emitting device may be included in various suitable types (or kinds) of electronic equipment.

[0416] For example, the electronic equipment including the light emitting device can be selected from a flat panel display, a curved display, a computer monitor, a medical monitor, a television, a billboard, an indoor light, an outdoor light, a signal light, a head-up display, a fully transparent display, a partially transparent display, a flexible display, a rollable display, a foldable display, a stretchable display, a laser printer, a telephone, a portable telephone, a tablet personal computer, a tablet phone, a personal digital assistant (PDA), a wearable device, a laptop computer, a digital camera, a video camera, a viewfinder, a microdisplay, a 3D display, a virtual reality display, an augmented reality display, a vehicle, a video wall including multiple displays tiled together, a theater screen, a stadium screen, a light therapy device and a sign.

[0417] The light emitting device may have excellent light emitting efficiency and a long lifespan, and thus electronic equipment including the light emitting device may have characteristics such as high brightness, high resolution, and low power consumption.

[0418] Figure 5 and Figure 6 Description

[0419] Figure 5 is a cross-sectional view showing an electronic device according to an embodiment.

[0420] Figure 5 The electronic device includes a substrate 100, a thin film transistor (TFT), a light emitting device, and a sealing portion 300 that seals the light emitting device.

[0421] The substrate 100 may be a flexible substrate, a glass substrate, and / or a metal substrate. A buffer layer 210 may be on the substrate 100. The buffer layer 210 may prevent or reduce the penetration of impurities through the substrate 100 and provide a flat surface on the substrate 100.

[0422] The TFT may be on the buffer layer 210. The TFT may include an active layer 220, a gate electrode 240, a source electrode 260, and a drain electrode 270.

[0423] The active layer 220 may include an inorganic semiconductor (such as silicon and / or polysilicon), an organic semiconductor, and / or an oxide semiconductor, and may include a source region, a drain region, and a channel region.

[0424] A gate insulating film 230 that insulates (eg, electrically insulates) the active layer 220 from the gate electrode 240 may be on the active layer 220 , and the gate electrode 240 may be on the gate insulating film 230 .

[0425] An interlayer insulating film 250 may be on the gate electrode 240. The interlayer insulating film 250 may be between the gate electrode 240 and the source electrode 260 and between the gate electrode 240 and the drain electrode 270 to insulate (eg, electrically insulate) these electrodes from each other.

[0426] Source and drain electrodes 260 and 270 may be on the interlayer insulating film 250. The interlayer insulating film 250 and the gate insulating film 230 may expose the source and drain regions of the active layer 220 and may contact the exposed portions of the source and drain regions of the active layer 220.

[0427] The TFT may be electrically connected to the light-emitting device to drive the light-emitting device and may be covered and protected by the passivation layer 280. The passivation layer 280 may include an inorganic insulating film (e.g., an inorganic electrical insulating film), an organic insulating film (e.g., an organic electrical insulating film), or any combination thereof. The light-emitting device may be provided on the passivation layer 280. The light-emitting device may include the first electrode 110, the interlayer 130, and the second electrode 150.

[0428] The first electrode 110 may be on the passivation layer 280. The passivation layer 280 may expose a portion of the drain electrode 270 without completely covering the drain electrode 270, and the first electrode 110 may be connected to the exposed portion of the drain electrode 270.

[0429] A pixel-defining layer 290 comprising an insulating material (e.g., an electrically insulating material) may be formed on the first electrode 110. The pixel-defining layer 290 may expose a specific region of the first electrode 110, and the interlayer 130 may be formed in the exposed region of the first electrode 110. The pixel-defining layer 290 may be a polyimide-based organic film and / or a polyacrylic-based organic film. In embodiments, at least some layers of the interlayer 130 may extend beyond the upper portion of the pixel-defining layer 290 to form a common layer.

[0430] The second electrode 150 may be on the interlayer 130, and the capping layer 170 may be additionally on the second electrode 150. The capping layer 170 may cover the second electrode 150.

[0431] The sealing portion 300 may be on the capping layer 170. The sealing portion 300 may be on the light emitting device to protect the light emitting device from moisture and / or oxygen. The sealing portion 300 may include: an inorganic film including silicon nitride (SiN x ), silicon oxide (SiO x ), indium tin oxide, indium zinc oxide or any combination thereof; organic films including polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, hexamethyldisiloxane, acrylic resins (e.g., polymethyl methacrylate, polyacrylic acid, etc.), epoxy resins (e.g., aliphatic glycidyl ether (AGE), etc.) or any combination thereof; or any combination of inorganic films and organic films.

[0432] Figure 6 is a cross-sectional view of an electronic device according to another embodiment.

[0433] Figure 6 Electronic equipment and Figure 5 The electronic device is substantially the same as the one of the embodiment, except that the light shielding pattern 500 and the functional area 400 are additionally on the sealing portion 300. The functional area 400 may be i) a color filter area, ii) a color conversion area, or iii) a combination of a color filter area and a color conversion area. Figure 6 The light-emitting device included in the electronic device may be a series light-emitting device.

[0434] Figure 7 Description

[0435] Figure 71 is a schematic perspective view of an electronic device 1 including a light-emitting device according to an embodiment. As a device for displaying moving images and / or still images, the electronic device 1 may be a portable electronic device such as a mobile phone, a smart phone, a tablet personal computer (PC), a mobile communication terminal, an electronic notebook computer, an e-book, a portable multimedia player (PMP), a navigation and / or ultra mobile PC (UMPC), as well as various suitable products such as a television, a laptop computer, a monitor, a billboard and / or an Internet of Things (IoT) device, or a part of such various suitable products. In an embodiment, the electronic device 1 may be a wearable device such as a smart watch, a watch phone, a glasses-type display and / or a head-mounted display (HMD), or a part of such a wearable device. However, the embodiment is not limited thereto. For example, the electronic equipment 1 may include a dashboard of a vehicle, a center console of a vehicle, a central information display arranged on the dashboard of a vehicle, a rearview mirror display replacing a side mirror of a vehicle, an entertainment display for a rear seat of a vehicle and / or a display on a backrest of a front seat, a head-up display (HUD) installed in front of the vehicle and / or projected onto the front windshield, and / or a computer-generated hologram augmented reality head-up display (CGH AR HUD). For convenience of description, Figure 7 Explanation is given of a case in which the electronic equipment 1 is a smartphone.

[0436] The electronic device 1 may include a display area DA and a non-display area NDA outside the display area DA. The display device may realize an image by providing a plurality of pixel arrays two-dimensionally in the display area DA.

[0437] The non-display area (NDA) is an area where no image is displayed and may completely surround the display area (DA). A driver for supplying electrical signals or power to display elements in the display area (DA) may be provided in the non-display area (NDA). Pads may also be provided in the non-display area (NDA) to electrically connect electronic components or a printed circuit board (PCB).

[0438] In the electronic device 1, the length in the x-axis direction and the length in the y-axis direction may be different from each other. Figure 7 As shown in FIG, the length in the x-axis direction may be shorter than the length in the y-axis direction. In one or more embodiments, the length in the x-axis direction may be the same as the length in the y-axis direction. In one or more embodiments, the length in the x-axis direction may be longer than the length in the y-axis direction.

[0439] Figure 8 and Figures 9A to 9C Description

[0440] Figure 8is a schematic diagram of the exterior of a vehicle 1000 as an electronic device including a light emitting device according to an embodiment. Figures 9A to 9C Each is a schematic diagram of the interior of a vehicle 1000 according to one or more embodiments.

[0441] See also Figure 8 、 Figure 9A 、 Figure 9B and Figure 9C Vehicle 1000 may refer to any suitable device for transporting objects, such as people, objects, and / or animals, from a departure point to a destination point. Vehicle 1000 may include a vehicle that travels on roads and / or tracks, a ship that travels on oceans and / or rivers, and / or an airplane that flies through the air.

[0442] Vehicle 1000 can travel on roads and / or tracks. Vehicle 1000 can move in a set or predetermined direction based on the rotation of at least one wheel. For example, vehicle 1000 may include a three-wheeled or four-wheeled vehicle, construction machinery, a two-wheeled vehicle, a prime mover, a bicycle, and / or a train traveling on tracks.

[0443] Vehicle 1000 may include a body having an interior and an exterior, and a chassis, which is a portion other than the body, on which mechanical equipment necessary for driving or useful is mounted. The exterior of the body may include a front panel, a hood, a roof panel, a rear panel, a trunk, and / or pillars provided at the boundaries between doors, etc. The chassis of vehicle 1000 may include a power generation device, a power transmission device, a drive device, a steering device, a brake device, a suspension device, a transmission device, a fuel system, front and / or rear wheels, and / or left and / or right wheels, etc.

[0444] The vehicle 1000 may include side windows 1100 , a front window 1200 , side mirrors 1300 , an instrument panel 1400 , a center console 1500 , a passenger seat instrument panel 1600 , and a display device 2 .

[0445] The side window glass 1100 and the front window glass 1200 may be divided by pillars between the side window glass 1100 and the front window glass 1200 .

[0446] A side window glass 1100 may be mounted on a side of the vehicle 1000. In an embodiment, the side window glass 1100 may be located on a door of the vehicle 1000. A plurality of side window glasses 1100 may be provided and may face each other. In an embodiment, the side window glass 1100 may include a first side window glass 1110 and a second side window glass 1120. In an embodiment, the first side window glass 1110 may be adjacent to the instrument panel 1400. The second side window glass 1120 may be adjacent to the passenger seat instrument panel 1600.

[0447] In an embodiment, the side window glasses 1100 may be spaced apart from each other in the x-axis direction or the -x-axis direction (the direction opposite to the x-axis direction). For example, the first side window glass 1110 and the second side window glass 1120 may be spaced apart from each other in the x-axis direction or the -x-axis direction. In an embodiment, the imaginary straight line L connecting the side window glasses 1100 may extend in the x-axis direction or the -x-axis direction. For example, the imaginary straight line L connecting the first side window glass 1110 and the second side window glass 1120 may extend in the x-axis direction or the -x-axis direction.

[0448] A front window glass 1200 may be installed at the front of the vehicle 1000. The front window glass 1200 may be between the side window glasses 1100 facing each other.

[0449] Side-view mirror 1300 provides a rear view of vehicle 1000. Side-view mirror 1300 may be mounted on the exterior of the vehicle body. In one embodiment, multiple side-view mirrors 1300 may be provided. Any one of multiple side-view mirrors 1300 may be positioned outside first side window glass 1110. Another one of multiple side-view mirrors 1300 may be positioned outside second side window glass 1120.

[0450] Instrument panel 1400 may be located in front of the steering wheel. Instrument panel 1400 may include a tachometer, a speedometer, a coolant temperature gauge, a fuel gauge, a turn signal indicator, a high beam indicator, warning lights, a seat belt warning light, an odometer, a speedometer, an automatic shift lever indicator light, a door open warning light, an oil warning light, and / or a low fuel warning light.

[0451] The center console 1500 may include a control panel on which a plurality of buttons for adjusting an audio device, an air conditioning device, and / or heaters of seats are provided. The center console 1500 may be on one side of the instrument panel 1400 .

[0452] Passenger seat instrument panel 1600 may be spaced apart from instrument panel 1400, with center console 1500 disposed between passenger seat instrument panel 1600 and instrument panel 1400. In an embodiment, instrument panel 1400 may correspond to the driver's seat, and passenger seat instrument panel 1600 may correspond to the passenger seat. In an embodiment, instrument panel 1400 may be adjacent to first side window glass 1110, and passenger seat instrument panel 1600 may be adjacent to second side window glass 1120.

[0453] In an embodiment, the display device 2 may include a display panel 3, and the display panel 3 may display an image. The display device 2 may be inside the vehicle 1000. In an embodiment, the display device 2 may be between the side windows 1100 facing each other. The display device 2 may be on at least one selected from the instrument panel 1400, the center console 1500, and the passenger seat instrument panel 1600.

[0454] The display device 2 may include an organic light-emitting display device, an inorganic electroluminescent display device, and / or a quantum dot display device, etc. Hereinafter, as the display device 2 according to the embodiment, an organic light-emitting display device including the aforementioned light-emitting device will be described as an example, but various appropriate types (or kinds) of the aforementioned display devices may be used in the embodiment.

[0455] See also Figure 9A , the display device 2 may be on the center console 1500. In an embodiment, the display device 2 may display navigation information. In an embodiment, the display device 2 may display audio, video and / or information about vehicle settings.

[0456] See also Figure 9B The display device 2 may be on the instrument panel 1400. When the display device 2 is on the instrument panel 1400, the instrument panel 1400 can display driving information and the like via the display device 2. In embodiments, the instrument panel 1400 may be digitally implemented. The instrument panel 1400 can digitally display vehicle and driving information as images. For example, a tachometer needle and / or gauge and / or various appropriate warning light icons may be displayed via digital signals.

[0457] See also Figure 9C , the display device 2 may be on the passenger seat instrument panel 1600. The display device 2 may be embedded in the passenger seat instrument panel 1600 or on the passenger seat instrument panel 1600. In an embodiment, the display device 2 on the passenger seat instrument panel 1600 may display images related to the information displayed on the instrument panel 1400 and / or the information displayed on the center console 1500. In one or more embodiments, the display device 2 on the passenger seat instrument panel 1600 may display information different from the information displayed on the instrument panel 1400 and / or the information displayed on the center console 1500.

[0458] Manufacturing method

[0459] The layer constituting the hole transport region, the emission layer and the layer constituting the electron transport region can be formed in a set or specific area by using various appropriate methods (such as vacuum deposition, spin coating, casting, Langmuir-Brockett (LB) deposition, inkjet printing, laser printing and / or laser induced thermal imaging, etc.).

[0460] When the layer constituting the hole transport region, the emission layer, and the layer constituting the electron transport region are formed by vacuum deposition, the deposition temperature may be within a range of about 100° C. to about 500° C. ... -8 About 10 -3 Torr in the range of vacuum and at about / second to about The deposition was performed at a deposition rate in the range of 100 Å / s.

[0461] Definition of terms

[0462] As used herein, the term "C3-C 60 "Carbocyclic group" refers to a cyclic group consisting only of carbon atoms as ring atoms and having 3 to 60 carbon atoms, for example, C3-C 50 Carbocyclic, C3-C 40 Carbocyclic, C3-C 30 Carbocyclic group, C3-C 20 Carbocyclic or C3-C 10 Carbocyclic groups, and as used herein, the term "C1-C 60 The "heterocyclic group" refers to a cyclic group having 1 to 60 carbon atoms and further having a heteroatom as a ring-forming atom in addition to carbon atoms, for example, C1-C 50 Heterocyclic group, C1-C 40 Heterocyclic group, C1-C 30 Heterocyclic group, C1-C 20 Heterocyclic or C1-C 10 Heterocyclic group. C3-C 60 Carbocyclic and C1-C 60 The heterocyclic group may be a monocyclic group consisting of one ring or a polycyclic group in which two or more rings are fused to each other. 60 The number of ring-forming atoms of the heterocyclic group can be 3 to 61.

[0463] As used herein, the term "cyclic group" may include C3-C 60 Carbocyclic and C1-C 60 Both heterocyclic groups.

[0464] As used herein, the term "π-electron-rich C3-C 60 The term "cyclic group" refers to a cyclic group having 3 to 60 carbon atoms and not including *-N=*' as a ring-forming part, and the term "π-electron-deficient nitrogen-containing C1-C 60 The term "cyclic group" refers to a heterocyclic group having 1 to 60 carbon atoms and including *-N=*' as a ring-constituting portion.

[0465] For example,

[0466] C3-C 60The carbocyclic group may be i) a group T1 or ii) a fused ring group in which two or more groups T1 are fused to each other (e.g., cyclopentadienyl, adamantyl, norbornyl, phenyl, pentalenyl, naphthyl, azulenyl, indacenyl, acenaphthenyl, phenalenyl, phenanthrenyl, anthracenyl, fluoranthenyl, triphenylene, pyrenyl, 1,2-triphenylenyl, perylenyl, pentaphenanthrenyl, heptalenyl, tetracenyl, phenanthrenyl, hexenyl, pentacenyl, rubenyl, coronenyl, ovalenyl, indenyl, fluorenyl, spirobifluorenyl, benzofluorenyl, indenophenanthrenyl, or indenoanthryl),

[0467] C1-C 60 The heterocyclic group may be i) a group T2, ii) a fused ring group in which at least two groups T2 are fused to each other, or iii) a fused ring group in which at least one group T2 and at least one group T1 are fused to each other (e.g., pyrrolyl, thienyl, furyl, indolyl, benzindolyl, naphthoindolyl, isoindolyl, benzisoindolyl, naphthoisoindolyl, benzothiorolyl, benzothiophenyl, benzofuranyl, carbazolyl, dibenzothiorolyl, dibenzothiophenyl, dibenzofuranyl, indenocarbazolyl, indolocarbazolyl, benzofuranocarbazolyl, benzothiophenocarbazolyl, benzothiorolocarbazolyl, benzindololcarbazolyl, benzocarbazolyl, benzonaphthofuranyl, benzonaphthothienyl, benzonaphthothiorolyl, benzofuranodibenzofuranyl, Benzofuranodibenzothiophene, benzothienodibenzothiophene, pyrazolyl, imidazolyl, triazolyl, oxazolyl, isoxazolyl, oxadiazolyl, thiazolyl, isothiazolyl, thiadiazolyl, benzopyrazolyl, benzimidazolyl, benzoxazolyl, benzisoxazolyl, benzothiazolyl, benzisothiazolyl, pyridinyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, quinolyl, isoquinolyl , benzoquinolinyl, benzoisoquinolinyl, quinoxalinyl, benzoquinoxalinyl, quinazolinyl, benzoquinazolinyl, phenanthrolinyl, cinnolinyl, phthalazinyl, naphthyridinyl, imidazopyridinyl, imidazopyrimidinyl, imidazotriazinyl, imidazopyrazinyl, imidazopyridazinyl, azacarbazolyl, azafluorenyl, azadibenzothiazolyl, azadibenzothiophenyl or azadibenzofuranyl, etc.),

[0468] π-electron-rich C3-C 60 The cyclic group may be i) a group T1, ii) a fused ring group in which two or more groups T1 are fused to each other, iii) a group T3, iv) a fused ring group in which two or more groups T3 are fused to each other, or v) a fused ring group in which at least one group T3 and at least one group T1 are fused to each other (e.g., C3-C 60carbocyclyl, 1H-pyrrolyl, thiolyl, borocyclopentadienyl, 2H-pyrrolyl, 3H-pyrrolyl, thienyl, furyl, indolyl, benzindolyl, naphthoindolyl, isoindolyl, benzisoindolyl, naphthoisoindolyl, benzothiolyl, benzothiophenyl, benzofuranyl, carbazolyl, dibenzothiolyl, dibenzothiophenyl, dibenzofuranyl, indenocarbazolyl, indolocarbazolyl, benzofuranocarbazolyl, benzothienocarbazolyl, benzothiololocarbazolyl, benzoindolcarbazolyl, benzocarbazolyl, benzonaphthofuranyl, benzonaphthothienyl, benzonaphthothiolyl, benzofuranodibenzofuranyl, benzofuranodibenzothienyl or benzothienodibenzothienyl, etc.),

[0469] π-electron-deficient nitrogen-containing C1-C 60 The cyclic group may be i) a group T4, ii) a fused ring group in which at least two groups T4 are fused to each other, iii) a fused ring group in which at least one group T4 and at least one group T1 are fused to each other, iv) a fused ring group in which at least one group T4 and at least one group T3 are fused to each other, or v) a fused ring group in which at least one group T4, at least one group T1 and at least one group T3 are fused to each other (e.g., pyrazolyl, imidazolyl, triazolyl, oxazolyl, isoxazolyl, oxadiazolyl, thiazolyl, isothiazolyl, thiadiazolyl , benzopyrazolyl, benzimidazolyl, benzoxazolyl, benzisoxazolyl, benzothiazolyl, benzisothiazolyl, pyridinyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, quinolyl, isoquinolyl, benzoquinolyl, benzoisoquinolyl, quinoxalinyl, benzoquinoxalinyl, quinazolinyl, benzoquinazolinyl, phenanthrolinyl, cinnolinyl, phthalazinyl, naphthyridinyl, imidazopyridinyl, imidazopyrimidinyl, imidazotriazinyl, imidazopyrazinyl, imidazopyridazinyl, azacarbazolyl, azafluorenyl, azadibenzothiazolyl, azadibenzothiophenyl and azadibenzofuranyl, etc.),

[0470] The group T1 can be cyclopropane, cyclobutane, cyclopentane, cyclohexane, cycloheptane, cyclooctane, cyclobutenyl, cyclopentenyl, cyclopentadienyl, cyclohexenyl, cyclohexadienyl, cycloheptenyl, adamantyl, norbornane (or bicyclo[2.2.1]heptane) group, norbornenyl, bicyclo[1.1.1]pentane, bicyclo[2.1.1]hexane, bicyclo[2.2.2]octane or phenyl,

[0471] The group T2 can be furyl, thienyl, 1H-pyrrolyl, thiolyl, borocyclopentyl, 2H-pyrrolyl, 3H-pyrrolyl, imidazolyl, pyrazolyl, triazolyl, tetrazolyl, oxazolyl, isoxazolyl, oxadiazolyl, thiazolyl, isothiazolyl, thiadiazolyl, azathiolyl, azaborolyl, pyridyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, tetrazinyl, pyrrolidinyl, imidazolidinyl, dihydropyrrolyl, piperidinyl, tetrahydropyridinyl, dihydropyridinyl, hexahydropyrimidinyl, tetrahydropyrimidinyl, dihydropyrimidinyl, piperazinyl, tetrahydropyrazinyl, dihydropyrazinyl, tetrahydropyridazinyl or dihydropyridazinyl,

[0472] The group T3 may be furyl, thienyl, 1H-pyrrolyl, thiolyl or borocyclopentadienyl, and

[0473] The group T4 may include a 2H-pyrrolyl group, a 3H-pyrrolyl group, an imidazolyl group, a pyrazolyl group, a triazolyl group, a tetrazolyl group, an oxazolyl group, an isoxazolyl group, an oxadiazolyl group, a thiazolyl group, an isothiazolyl group, a thiadiazolyl group, an azathiazolyl group, an azaborolyl group, a pyridyl group, a pyrimidinyl group, a pyrazinyl group, a pyridazinyl group, a triazinyl group or a tetrazinyl group.

[0474] As used herein, the terms "cyclic group", "C3-C 60 Carbocyclic group", "C1-C 60 Heterocyclic groups", "π-electron-rich C3-C 60 Cyclic group" or "π-electron-deficient nitrogen-containing C1-C 60 The term "cyclic group" refers to a monovalent or polyvalent group (e.g., a divalent group, a trivalent group, a tetravalent group, etc.) fused to (e.g., bonded together with) a cyclic group, depending on the structure of the formula using the corresponding term. For example, "phenyl" may be benzo, phenyl, or phenylene, etc., which can be easily understood by those skilled in the art based on the structure of the formula including "phenyl".

[0475] Unit price C3-C 60 Carbocyclic groups and monovalent C1-C 60 Examples of heterocyclic groups may include C3-C 10 Cycloalkyl, C1-C 10 Heterocycloalkyl, C3-C 10 Cycloalkenyl, C1-C 10 Heterocycloalkenyl, C6-C 60 Aryl, C1-C 60 heteroaryl, monovalent non-aromatic fused polycyclic group and monovalent non-aromatic fused heteropolycyclic group, and divalent C3-C 60 Carbocyclic groups and divalent C1-C 60 Examples of heterocyclic groups may include C3-C 10 Cycloalkylene, C1-C 10 Heterocycloalkylene, C3-C10 Cycloalkenylene, C1-C 10 Heterocycloalkenylene, C6-C 60 Arylene, C1-C 60 heteroarylene group, a divalent non-aromatic fused polycyclic group, and a divalent non-aromatic fused heteropolycyclic group.

[0476] As used herein, the term "C1-C 60 "Alkyl" refers to a straight or branched chain aliphatic hydrocarbon monovalent group having 1 to 60 carbon atoms, for example, C1-C 50 Alkyl, C1-C 30 Alkyl, C1-C 20 Alkyl or C1-C 10 The term "C1-C1-alkyl" may be used herein and examples thereof may include methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl, tert-butyl, n-pentyl, tert-pentyl, neopentyl, isopentyl, sec-pentyl, 3-pentyl, sec-isopentyl, n-hexyl, isohexyl, sec-hexyl, tert-hexyl, n-heptyl, isoheptyl, sec-heptyl, tert-heptyl, n-octyl, isooctyl, sec-octyl, tert-octyl, n-nonyl, isononyl, sec-nonyl, tert-nonyl, n-decyl, isodecyl, sec-decyl, and tert-decyl. As used herein, the term "C1-C1-alkyl" may be used herein. 60 "Alkylene" refers to a C1-C 60 The alkyl group has a divalent group having substantially the same structure.

[0477] As used herein, the term "C2-C 60 "Alkenyl" refers to a C2-C 60 A monovalent hydrocarbon group having at least one carbon-carbon double bond in the middle or at the end of the alkyl group, for example, C2-C 30 Alkenyl, C2-C 20 Alkenyl or C2-C 10 The term "C2-C4-alkenyl" as used herein may include vinyl, propenyl, butenyl, etc. 60 "Alkenylene" refers to a C2-C 60 Alkenyl groups are divalent groups having substantially the same structure.

[0478] As used herein, the term "C2-C 60 "Alkynyl" refers to a C2-C 60 The alkyl group is a monovalent hydrocarbon group having at least one carbon-carbon triple bond in the main chain (e.g., the middle) or at the end (e.g., the terminal) of the alkyl group, e.g., C2-C 30 Alkynyl, C2-C 20 Alkynyl or C2-C 10 Alkynyl, and examples thereof may include ethynyl and propynyl, etc. As used herein, the term "C2-C 60 "Alkynylidene" refers to a C2-C 60Alkynyl groups are divalent groups having substantially the same structure.

[0479] As used herein, the term "C1-C 60 "Alkoxy" refers to a 101 (where A 101 C1-C 60 A monovalent group represented by an alkyl group, for example, C1-C 30 Alkoxy, C1-C 20 Alkoxy or C1-C 10 Alkoxy group, and examples thereof may include methoxy group, ethoxy group, isopropoxy group, and the like.

[0480] As used herein, the term "C3-C 10 The term "cycloalkyl" refers to a monovalent saturated hydrocarbon ring group having 3 to 10 carbon atoms, and examples thereof may include cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, adamantyl, norbornyl (or bicyclo[2.2.1]heptyl), bicyclo[1.1.1]pentyl, bicyclo[2.1.1]hexyl and bicyclo[2.2.2]octyl. As used herein, the term "C3-C 10 "Cycloalkylene" refers to a C3-C 10 The cycloalkyl group has a divalent group having substantially the same structure.

[0481] As used herein, the term "C1-C 10 "Heterocycloalkyl" refers to a monovalent cyclic group of 1 to 10 carbon atoms, further including at least one heteroatom as a ring-constituting atom in addition to carbon atoms, and examples thereof may include 1,2,3,4-oxatriazolidinyl, tetrahydrofuranyl, tetrahydrothienyl, and the like. As used herein, the term "C1-C 10 "Heterocycloalkylene" refers to a C1-C 10 The heterocycloalkyl group has a divalent group having substantially the same structure.

[0482] As used herein, the term "C3-C 10 The term "cycloalkenyl" as used herein refers to a monovalent cyclic group having 3 to 10 carbon atoms, having at least one carbon-carbon double bond in its ring, and having no aromaticity (e.g., not aromatic), and examples thereof may include cyclopentenyl, cyclohexenyl, cycloheptenyl, and the like. 10 "Cycloalkenylene" refers to a C3-C 10 The cycloalkenyl group is a divalent group having substantially the same structure.

[0483] As used herein, the term "C1-C 10"Heterocycloalkenyl" refers to a monovalent cyclic group of 1 to 10 carbon atoms, further including at least one heteroatom as a ring-forming atom in addition to carbon atoms, and at least one double bond in its ring structure. 10 Examples of heterocycloalkenyl groups may include 4,5-dihydro-1,2,3,4-oxatriazolyl, 2,3-dihydrofuranyl, 2,3-dihydrothienyl, and the like. As used herein, the term "C1-C 10 "Heterocycloalkenylene" refers to a C1-C 10 The heterocycloalkenyl group is a divalent group having substantially the same structure.

[0484] As used herein, the term "C6-C 60 "Aryl" refers to a monovalent radical of a carbocyclic aromatic system having 6 to 60 carbon atoms, for example, C6-C 50 Aryl, C6-C 40 Aryl, C6-C 30 Aryl, C6-C 20 Aryl or C6-C 15 Aryl, and as used herein the term "C6-C 60 "Arylene" refers to a divalent group of a carbocyclic aromatic system having 6 to 60 carbon atoms. 60 Examples of aryl groups may include phenyl, pentalenyl, naphthyl, azulenyl, indacenyl, acenaphthenyl, phenalenyl, phenanthrenyl, anthracenyl, fluoranthenyl, triphenylene, pyrenyl, 1,2-triphenylenyl, perylenyl, pentaphenanyl, heptalenyl, tetracenyl, pyrenyl, hexenyl, pentacenyl, rubenyl, corundum, and ovalenyl. 60 Aryl and C6-C 60 When the arylene groups each include two or more rings, these rings may be fused to each other.

[0485] As used herein, the term "C1-C 60 "Heteroaryl" refers to a monovalent group of a heterocyclic aromatic system having 1 to 60 carbon atoms, which further includes at least one heteroatom as a ring-forming atom in addition to carbon atoms, for example, C1-C 50 Heteroaryl, C1-C 40 Heteroaryl, C1-C 30 Heteroaryl, C1-C 20 Heteroaryl or C1-C 10 Heteroaryl. As used herein, the term "C1-C 60 "Heteroarylene" refers to a divalent group of a heterocyclic aromatic system having 1 to 60 carbon atoms, which further includes at least one heteroatom as a ring-forming atom in addition to carbon atoms. 60Examples of heteroaryl groups may include pyridyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, quinolyl, benzoquinolyl, isoquinolyl, benzoisoquinolyl, quinoxalinyl, benzoquinoxalinyl, quinazolinyl, benzoquinazolinyl, cinnolinyl, phenanthrolinyl, phthalazinyl, and naphthyridinyl. 60 Heteroaryl and C1-C 60 When the heteroarylene groups each include two or more rings, these rings may be fused to each other.

[0486] As used herein, the term "monovalent non-aromatic fused polycyclic group" refers to a monovalent group (e.g., having 8 to 60 carbon atoms) having two or more rings fused to each other, with only carbon atoms as ring atoms, and having no aromaticity in the entire molecular structure (e.g., not aromatic when considered as a whole), for example, C8-C 60 Monovalent non-aromatic fused polycyclic group, C8-C 50 Monovalent non-aromatic fused polycyclic group, C8-C 40 Monovalent non-aromatic fused polycyclic group, C8-C 30 Monovalent non-aromatic fused polycyclic group or C8-C 20 Monovalent non-aromatic fused polycyclic group. Examples of the monovalent non-aromatic fused polycyclic group may include indenyl, fluorenyl, spirobifluorenyl, benzofluorenyl, indenophenanthryl, and indenoanthryl. As used herein, the term "divalent non-aromatic fused polycyclic group" refers to a divalent group having substantially the same structure as the above-mentioned monovalent non-aromatic fused polycyclic group.

[0487] As used herein, the term "monovalent non-aromatic fused heteropolycyclic group" refers to a monovalent group (e.g., having 1 to 60 carbon atoms) having two or more rings fused to each other, further including at least one heteroatom as a ring-constituting atom in addition to carbon atoms, and having non-aromaticity (e.g., not aromatic when considered as a whole) in its entire molecular structure, for example, C1-C 60 Monovalent non-aromatic fused heteropolycyclic group, C1-C 50 Monovalent non-aromatic fused heteropolycyclic group, C1-C 40 Monovalent non-aromatic fused heteropolycyclic group, C1-C 30 Monovalent non-aromatic fused heteropolycyclic group or C1-C 20Monovalent non-aromatic fused heteropolycyclic group. Examples of the monovalent non-aromatic fused heteropolycyclic group may include pyrrolyl, thienyl, furyl, indolyl, benzindolyl, naphthoindolyl, isoindolyl, benzisoindolyl, naphthoisoindolyl, benzothiorolyl, benzothiophenyl, benzofuranyl, carbazolyl, dibenzothiorolyl, dibenzothiophenyl, dibenzofuranyl, azacarbazolyl, azafluorenyl, azadibenzothiorolyl, azadibenzothiophenyl, azadibenzofuranyl, pyrazolyl, imidazolyl, triazolyl, tetrazolyl, oxazolyl, isoxazolyl, thiazolyl, isothiazolyl, oxadiazolyl, thiadiazolyl The term "divalent non-aromatic fused heteropolycyclic group" as used herein refers to a divalent group having substantially the same structure as a monovalent non-aromatic fused heteropolycyclic group.

[0488] As used herein, the term "C6-C 60 Aryloxy" indicates -OA 102 (where A 102 C6-C 60 Aryl), for example, C6-C 50 Aryloxy, C6-C 40 Aryloxy, C6-C 30 Aryloxy, C6-C 20 Aryloxy or C6-C 15 Aryloxy, and as used herein the term "C6-C 60 Arylthio" indicates -SA 103 (where A 103 C6-C 60 Aryl), for example, C6-C 50 Arylthio, C6-C 40 Arylthio, C6-C 30 Arylthio, C6-C 20 Arylthio or C6-C 15 Arylthio.

[0489] As used herein, the term "C7-C 60 "Aralkyl" refers to -A 104 A 105 (where A 104 C1-C 54 Alkylene, and A105 C6-C 59 aryl), for example, C7-C 50 Aralkyl, C7-C 40 Aralkyl, C7-C 30 Aralkyl, C7-C 20 Arylalkyl or C7-C 15 Aralkyl, and as used herein the term "C2-C 60 "Heteroaralkyl" refers to -A 106 A 107 (where A 106 C1-C 59 Alkylene, and A 107 C1-C 59 heteroaryl), for example, C2-C 50 Heteroarylalkyl, C2-C 40 Heteroarylalkyl, C2-C 30 Heteroarylalkyl, C2-C 20 Heteroarylalkyl or C2-C 15 Heteroaralkyl.

[0490] As used herein, the term "R 10a " can be:

[0491] deuterium, -F, -Cl, -Br, -I, hydroxy, cyano, or nitro;

[0492] Each unsubstituted or substituted C1-C 60 Alkyl, C2-C 60 Alkenyl, C2-C 60 Alkynyl or C1-C 60 Alkoxy: deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C3-C 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy, C6-C 60 Arylthio, C7-C 60 Aralkyl, C2-C 60 Heteroaralkyl, -Si(Q 11 )(Q 12 )(Q 13 )、-N(Q 11 )(Q 12 )、-B(Q 11 )(Q 12 ),-C(=O)(Q 11 )、-S(=O)2(Q 11 ),-P(=O)(Q 11 )(Q 12 ) or any combination thereof;

[0493] Each unsubstituted or substituted C3-C 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy, C6-C 60 Arylthio, C7-C 60 Arylalkyl or C2-C 60 Heteroarylalkyl: deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C1-C 60 Alkyl, C2-C 60 Alkenyl, C2-C 60 Alkynyl, C1-C 60 Alkoxy, C3-C 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy, C6-C 60 Arylthio, C7-C 60 Aralkyl, C2-C 60 Heteroaralkyl, -Si(Q 21 )(Q 22 )(Q 23 )、-N(Q 21 )(Q 22 )、-B(Q 21 )(Q 22 ),-C(=O)(Q 21 )、-S(=O)2(Q 21 ),-P(=O)(Q 21 )(Q 22 ) or any combination thereof; or

[0494] -Si(Q 31 )(Q 32 )(Q 33 )、-N(Q 31 )(Q 32 )、-B(Q 31 )(Q 32 ),-C(=O)(Q 31 )、-S(=O)2(Q 31 ) or -P(=O)(Q 31 )(Q 32 ).

[0495] In the manual, Q 11 To Q 13 , Q 21 To Q 23 and Q 31 To Q 33 Each of them can be independently: hydrogen; deuterium; -F; -Cl; -Br; -I; hydroxyl; cyano; nitro; C1-C60 Alkyl; C2-C 60 Alkenyl; C2-C 60 Alkynyl; C1-C 60 Alkoxy; each unsubstituted or deuterated, -F, cyano, C1-C 60 Alkyl, C1-C 60 C3-C substituted by alkoxy, phenyl, biphenyl or any combination thereof 60 Carbocyclic or C1-C 60 Heterocyclic group; C7-C 60 Aralkyl; or C2-C 60 Heteroaralkyl.

[0496] As used herein, the term "heteroatom" refers to any atom other than a carbon atom and a hydrogen atom. Examples of heteroatoms may include O, S, N, P, Si, B, Ge, Se, and any combination thereof.

[0497] The term "transition metal" as used herein includes Hf, Ta, W, Re, Os, Ir, Pt, Au, and the like.

[0498] In the specification, "Ph" refers to phenyl, "Me" refers to methyl, "Et" refers to ethyl, "tert-Bu" or "Bu t ” refers to tert-butyl, and “OMe” refers to methoxy.

[0499] As used herein, the term "biphenyl" refers to a "phenyl group substituted by a phenyl group". In an embodiment, the "biphenyl" may be a C6-C 60 A phenyl group substituted with an aryl group as a substituent.

[0500] As used herein, the term "terphenyl" refers to a "phenyl group substituted by a biphenyl group". In an embodiment, the "terphenyl" may be a C6-C 60 Aryl-substituted C6-C 60 A phenyl group substituted with an aryl group as a substituent.

[0501] Unless otherwise defined, * and *' as used herein each refer to a binding site to an adjacent atom in the corresponding formula or moiety.

[0502] In the specification, the x-axis, y-axis, and z-axis are not limited to the three axes in the orthogonal coordinate system and can be interpreted in a broad sense to include these axes. For example, the x-axis, y-axis, and z-axis can refer to axes that are orthogonal to each other, or axes that are not orthogonal to each other in different directions.

[0503] Hereinafter, the compound according to the embodiment and the light-emitting device according to the embodiment will be described in more detail with reference to the following synthesis examples and examples. The phrase "using B instead of A" used in describing the synthesis examples means using B instead of A in the same molar equivalent.

[0504] Synthesis example

[0505] Synthesis Example 1-1 (Synthesis of Quantum Dot 1-1)

[0506] In order to synthesize blue CdZnS / ZnS quantum dots, a 50ml three-necked flask was prepared. In the flask, 1.1mmol of cadmium acetate and 10mmol of zinc acetate were mixed with 7.5ml of oleic acid (OA), and the resulting mixed solution was kept in a vacuum at 120°C for 30 minutes. Then, the flask was filled with N2 atmosphere, 15ml of 1-octadecene (ODE) was injected into it, and the temperature was raised to 310°C. When the temperature reached 310°C, 2.4ml of 0.7M S-ODE (S mixed with ODE) solution was injected into the flask and reacted for 12 minutes to form a CdZnS core. 5ml of 0.8M S-trioctylphosphine (S-TOP) was added and reacted for 4 hours to form a ZnS shell and complete the reaction. After the temperature of the resulting reaction solution was lowered to room temperature and acetone was added, CdZnS / ZnS quantum dots were obtained by centrifugation. These quantum dots were dispersed in octane and used for analysis and device fabrication.

[0507] Synthesis Example 1-2 (Synthesis of Quantum Dots 1-2)

[0508] In order to synthesize green InP / ZnSe / ZnS quantum dots, a 50ml three-necked flask was prepared. In the flask, 0.8mmol of indium acetate and 2.4mmol of palmitic acid (PA) were mixed with 20ml of ODE, and the resulting mixed solution was kept in a vacuum at 120°C for 30 minutes. Then, the flask was filled with N2 atmosphere and the temperature was raised to 260°C, 0.4ml of tris(trimethylsilyl)phosphine (TMS3P) was injected and reacted for 40 minutes. After the InP core solution at the end of the reaction was cooled to room temperature and acetone was added, only the InP quantum dot core was separated by centrifugation. The separated InP quantum dot cores were dispersed in 2ml of toluene and used for the subsequent shelling process.

[0509] For the shelling process, 0.32mmol of zinc acetate was mixed with 0.64mmol of OA and 16ml of trioctylamine (TOA) in a 50ml three-necked flask. The resulting mixed solution was kept in a vacuum at 120°C for 30 minutes, the flask was filled with N2 atmosphere, and the temperature was raised to 180°C. After injecting 2ml of InP core solution therein, 0.04ml of HF solution (10wt%, a mixed solution of HF and acetone) was injected therein and reacted for 2 minutes. After the temperature was raised to 340°C, 8.8ml of 0.4M zinc oleate solution (a mixed solution of zinc acetate, OA and TOA) and 1.6ml of 2M Se-TOP solution were injected therein and reacted for 1 hour to form a ZnSe shell. Subsequently, 2.4ml of 0.4M zinc oleate solution and 0.64ml of 2M S-TOP solution were added thereto and reacted for 20 minutes to form a ZnS shell and complete the reaction. The synthesized InP / ZnSe / ZnS quantum dots were centrifuged by adding ethanol and then dispersed in octane for use.

[0510] Synthesis Example 1-3 (Synthesis of Quantum Dots 1-3)

[0511] In order to synthesize red InP / ZnSe / ZnS quantum dots, a 50ml three-necked flask was prepared. In the flask, 0.8mmol of indium acetate and 2.4mmol of PA were mixed with 20ml of ODE, and the resulting mixed solution was kept in a vacuum at 120°C for 30 minutes. Then, the flask was filled with N2 atmosphere and the temperature was raised to 280°C, 0.4ml of TMS3P was injected and the temperature was lowered to 260°C. After the reaction was allowed to proceed for 40 minutes at this temperature, 10.5ml of 0.2M indium solution (a mixed solution of indium acetate, PA and ODE) and 5.2ml of 0.2M TMS3P-TOP solution were slowly injected for 35 minutes. After the InP core solution at the end of the reaction was cooled to room temperature and acetone was added, only the InP quantum dot cores were separated by centrifugation. The separated InP quantum dot cores were dispersed in 2ml of toluene and used for the subsequent shelling process.

[0512] For the shelling process, 0.32mmol of zinc acetate was mixed with 0.64mmol of OA and 16ml of TOA in a 50ml three-necked flask. The resulting mixed solution was kept in a vacuum at 120°C for 30 minutes, the flask was filled with N2 atmosphere, and the temperature was raised to 180°C. After injecting 2ml of InP core solution thereinto, 0.04ml of HF solution (10wt%, a mixed solution of HF and acetone) was injected thereinto and reacted for 2 minutes. After the temperature was raised to 340°C, 8.8ml of 0.4M zinc oleate solution (a mixed solution of zinc acetate, OA and TOA) and 1.6ml of 2M Se-TOP solution were injected thereinto and reacted for 1 hour to form a ZnSe shell. Subsequently, 2.4ml of 0.4M zinc oleate solution and 0.64ml of 2M S-TOP solution were added thereto and reacted for 20 minutes to form a ZnS shell and complete the reaction. The synthesized InP / ZnSe / ZnS quantum dots were centrifuged and dispersed in octane by adding ethanol for use.

[0513] Synthesis Example 2-1 (Synthesis of Quantum Dot 2-1)

[0514] Quantum dots were synthesized in the same manner as in Synthesis Example 1-1. That is, Quantum Dot 2-1 was the same as Quantum Dot 1-1.

[0515] Synthesis Example 2-2 (Synthesis of Quantum Dot 2-2)

[0516] In order to synthesize blue ZnSeTe / ZnSe / ZnS quantum dots, a 100ml three-necked flask was prepared. In the flask, 2mmol of zinc acetate was mixed with 2ml of OA and 15ml of TOA, and the resulting mixed solution was kept in a vacuum at 120°C for 30 minutes. After the flask was filled with N2 atmosphere and the temperature was raised to 210°C, 0.5ml of 2M Se-DPP solution (a mixed solution of Se and diphenylphosphine) and 0.9ml of 0.047M Te-TOP solution were injected in sequence. Then, the resulting mixed solution was kept at 210°C for 30 minutes, and the temperature was raised to 300°C and the reaction was allowed to proceed for 1 hour. After the synthesized ZnSeTe core solution was cooled to room temperature and ethanol was added to the resulting reaction solution, the ZnSeTe quantum dot core was obtained by centrifugation. The separated ZnSeTe quantum dot core was dispersed in 3ml of hexane and used for the subsequent shelling process.

[0517] In a 500ml three-necked flask, 9mmol of zinc acetate was mixed with 6ml of OA and 45ml of TOA, and the resulting mixed solution was kept in a vacuum at 120°C for 30 minutes. After the flask was filled with N2 atmosphere, 3ml of the previously prepared ZnSeTe core solution was injected into it. Then, after the temperature was raised to 340°C, 12ml of 0.5M zinc oleate solution (a mixed solution of zinc acetate, OA and TOA) and 1.8ml of 2M Se-TOP solution were injected and reacted for 30 minutes to form a ZnSe shell. At the same time, in order to form a ZnS shell, 9ml of 0.5M zinc oleate solution and 3.6ml of 2M S-TOP solution were injected and reacted at the same temperature for 30 minutes. After the reaction was completed, the temperature was lowered to room temperature, and ethanol was added to the resulting reaction solution to obtain ZnSeTe / ZnSe / ZnS quantum dots by centrifugation. These quantum dots were dispersed in octane and used for analysis and device manufacturing.

[0518] Evaluation Example 1

[0519] To confirm the thermal stability of synthesized quantum dots 1-1 to 1-3, as well as quantum dots 2-1 and 2-2, an ink in which these quantum dots were dispersed in octane at a concentration of 40 mg / ml was spin-coated at 3,000 rpm for 20 seconds onto glass to form a film, and the film was repeatedly baked on a 140°C hot plate for 20 minutes for the following number of times. The photoluminescence (PL) values were then measured using a fluorescence spectrophotometer (F-7000, Hitachi), and the PL maintenance ratio relative to the initial PL value is shown in Table 1.

[0520] Table 1

[0521] 0 times 1 time 2 times 3 times Quantum Dot 1-1(B) 1 0.98 0.97 0.95 Quantum Dots 1-2(G) 1 0.95 0.91 0.86 Quantum Dots 1-3(R) 1 0.96 0.93 0.88 Quantum Dot 2-2(B) 1 0.76 0.61 0.39

[0522] Referring to Table 1, it can be seen that even after three baking times, the PL maintenance rate of the quantum dot 1-1 of the present disclosure is maintained at at least 0.95.

[0523] Evaluation Example 2

[0524] Inductively coupled plasma (ICP) analysis was performed on the synthesized quantum dot 1-1, and the results are shown in Table 2.

[0525] Table 2

[0526]

[0527] Referring to Table 2, it can be seen that the atomic ratios of Cd, Zn, and S in the quantum dot 1-1 are as shown in Table 2.

[0528] Evaluation Example 3

[0529] The absorption spectra and PL spectra of the synthesized quantum dots 1-1 to 1-3 and 2-2 were obtained, and the results are shown in Tables 3 and 4. Figure 10 middle.

[0530] Table 3

[0531]

[0532] X: non-absorbable O: absorbable

[0533] See Table 3 and Figure 10 , it can be seen that in the case of manufacturing a light-emitting device including quantum dots 1-1 to 1-3, when quantum dots 1-1, 1-2, and 1-3 are arranged in this order, the reduction in luminous efficiency due to light absorption is minimized.

[0534] Example

[0535] Example 1

[0536] A 15Ω / cm 2 A glass substrate (a product of Corning) with an ITO / Ag / ITO anode was cut into a size of 50 mm × 50 mm × 0.7 mm, ultrasonicated with isopropyl alcohol and pure water for 5 minutes each, and then cleaned by exposure to ultraviolet light and ozone for 15 minutes. The resulting glass substrate was loaded onto a vacuum deposition device.

[0537] The ITO / Ag / ITO anode was spin-coated on a glass substrate using poly(3,4-ethylenedioxythiophene) / poly(4-styrenesulfonate) (PEDOT / PSS) to form a The hole injection layer was spin-coated with poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butyl)phenyl)diphenylamine)] (TFB) to form a hole injection layer having a thickness of The hole transport layer was formed into a film having a thickness of 100 nm and the hole transport layer was spin-coated with the quantum dots 1-1 in Table 3. The film was then baked at 140° C. for 20 minutes to form a film having a thickness of 100 nm. The first emission layer is spin-coated with ZnMgO to form a first emission layer having a thickness of An electron transport layer with a thickness of , thereby forming a first emission unit.

[0538] BCP and Li were co-deposited on the first emission unit at a weight ratio of 99:1 to form a and depositing HAT-CN on the n-type charge generation unit to form a A p-type charge generation unit with a thickness of 1000 Å is formed, thereby forming a first charge generation unit.

[0539] The first charge generation unit was spin-coated with poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4′-(N-(4-sec-butyl)phenyl)diphenylamine)] (TFB) to form a The hole transport layer was formed into a film having a thickness of 100 nm and the hole transport layer was spin-coated with quantum dots 1-2 of Table 4. The film was then baked at 140° C. for 20 minutes to form a film having a thickness of 100 nm. The second emission layer is spin-coated with ZnMgO to form a second emission layer having a thickness of An electron transport layer with a thickness of , thereby forming a second emission unit.

[0540] BCP and Li were co-deposited on the second emission unit at a weight ratio of 99:1 to form a and depositing HAT-CN on the n-type charge generation unit to form a A p-type charge generation unit with a thickness of 100 Å is formed, thereby forming a second charge generation unit.

[0541] The second charge generation unit is spin-coated with TFB to form a The hole transport layer was formed into a film having a thickness of 100 nm and the hole transport layer was spin-coated with quantum dots 1 to 3 of Table 3. The film was then baked at 140° C. for 20 minutes to form a film having a thickness of 100 nm. The third emission layer is formed by spin coating the third emission layer with a thickness of 1000 nm and 1000 nm, and the third emission layer is spin coated with ZnMgO to form a An electron transport layer with a thickness of , thereby forming a third emission unit.

[0542] Ag and Mg were co-deposited on the third emission unit at a weight ratio of 20:1 to form a A cathode with a thickness of is formed, thereby completing the manufacture of the light-emitting device.

[0543] Example 2

[0544] A 15Ω / cm 2 A glass substrate (a product of Corning) with an ITO / Ag / ITO anode was cut into a size of 50 mm × 50 mm × 0.7 mm, ultrasonicated with isopropyl alcohol and pure water for 5 minutes each, and then cleaned by exposure to ultraviolet light and ozone for 15 minutes. The resulting glass substrate was loaded onto a vacuum deposition device.

[0545] The ITO / Ag / ITO anode on the glass substrate was spin-coated with PEDOT / PSS to form a The hole injection layer is spin-coated with TFB to form a hole injection layer having a thickness of The hole transport layer was formed into a film having a thickness of 100 nm and the hole transport layer was spin-coated with the quantum dot 2-1 of Table 5. The film was then baked at 140° C. for 20 minutes to form a film having a thickness of 100 nm. The first emission layer is spin-coated with ZnMgO to form a first emission layer having a thickness of An electron transport layer with a thickness of , thereby forming a first emission unit.

[0546] BCP and Li were co-deposited on the first emission unit at a weight ratio of 99:1 to form a and depositing HAT-CN on the n-type charge generation unit to form a A p-type charge generation unit with a thickness of 1000 Å is formed, thereby forming a first charge generation unit.

[0547] The first charge generation unit is spin-coated with TFB to form a The hole transport layer was formed into a film having a thickness of 100 nm and the hole transport layer was spin-coated with the quantum dots 2-2 of Table 4. The film was then baked at 140° C. for 20 minutes to form a film having a thickness of 100 nm. The second 'emission layer is formed by spin coating the second 'emission layer with a thickness of The electron transport layer has a thickness of , thereby forming a second 'emission unit.

[0548] Ag and Mg were co-deposited on the second 'emission unit' at a weight ratio of 20:1 to form a A cathode with a thickness of is formed, thereby completing the manufacture of the light-emitting device.

[0549] Comparative Example 1

[0550] A light-emitting device was manufactured in substantially the same manner as in Example 1, except that the quantum dots listed in Table 4 were used instead of Quantum Dot 1-1, Quantum Dot 1-2, and Quantum Dot 1-3.

[0551] Comparative Example 2

[0552] A light-emitting device was manufactured in substantially the same manner as in Example 2, except that the quantum dots listed in Table 5 were used instead of Quantum Dot 2-1 and Quantum Dot 2-2.

[0553] Table 4

[0554]

[0555] Table 5

[0556]

[0557] The composition of quantum dot 1-2 is the same as that of comparative quantum dot 1-2, the composition of quantum dot 1-3 is the same as that of comparative quantum dot 1-3, and the composition of quantum dot 2-2 is the same as that of comparative quantum dot 2-2.

[0558] Evaluation Example 4

[0559] The external quantum efficiency (EQE) of the light emitting devices of Example 1 and Example 2 and Comparative Example 1 and Comparative Example 2 was measured by using Keithley SMU 236, and the results are shown in Table 6.

[0560] Table 6

[0561] EQE (%) Example 1 9.3 Example 2 8.1 Comparative Example 1 6.7 Comparative Example 2 3.5

[0562] Referring to Table 6, it can be seen that the light-emitting devices of Examples 1 and 2 have excellent EQE compared to the light-emitting devices of Comparative Examples 1 and 2.

[0563] As such, it can be seen that the light-emitting devices of Examples 1 and 2 including the first emission layer show excellent external quantum efficiency based on high thermal stability, wherein the first emission layer includes quantum dots 1-1 and quantum dots 2-1 having excellent thermal stability by satisfying the Cd amount range and PL maintenance rate disclosed in the present invention.

[0564] According to one or more embodiments, the light emitting device has excellent light emitting efficiency, and thus, high-quality electronic devices and electronic equipment can be provided using the light emitting device.

[0565] It should be understood that the embodiments described herein should be considered in a descriptive sense only and not for the purpose of limitation. The description of features or aspects in each embodiment should generally be considered to be applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the figures, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present disclosure as defined by the appended claims and their equivalents.

Claims

1. A light-emitting device, comprising: a first electrode; a second electrode facing the first electrode; as well as an interlayer between the first electrode and the second electrode and including an emitting layer, wherein the emission layer comprises a first emission layer, The interlayer includes m emission units and m-1 charge generation units, each of which is between adjacent emission units among the m emission units. m is an integer of 2 or greater, an emission unit between the first electrode and a charge generation unit adjacent to the first electrode including a first emission layer, The first emission layer includes a first quantum dot, The first quantum dot includes Cd, an atomic ratio of which relative to the total atoms of the first quantum dot is in the range of 0.001 to 0.1, and The first quantum dots have a PL maintenance ratio in the range of 0.90 to 1. 2 . The light emitting device according to claim 1 , wherein the first quantum dot includes Cd, and an atomic ratio thereof relative to total atoms of the first quantum dot is in a range of 0.005 to 0.

1. The light emitting device according to claim 1 , wherein the first quantum dot has a PL maintenance ratio in the range of 0.95 to 0.

99.

4. The light emitting device according to claim 1, wherein: m is an integer of 3 or greater, The emission layer further includes a second emission layer and a third emission layer, The interlayer includes a first emission unit, a first charge generation unit, a second emission unit, a second charge generation unit and a third emission unit provided in sequence, The first emission unit includes the first emission layer, The second emission unit includes the second emission layer, and The third emission unit includes the third emission layer.

5. The light emitting device according to claim 4, wherein: The second emission layer includes second quantum dots, The third emission layer includes a third quantum dot, and The second quantum dot and the third quantum dot each independently include a Group III-V semiconductor compound.

6. The light-emitting device of claim 5 , wherein the Group III-V semiconductor compound comprises GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNPs, GaNAs, GaNSb, GaPAs, GaPSb, AlNPs, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, GaAlNPs, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNPs, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNPs, InAlNAs, InAlNSb, InAlPAs, InAlPSb, or any combination thereof. The light emitting device according to claim 5 , wherein the second quantum dot and the third quantum dot each independently further comprise a Group II-VI semiconductor compound.

8. The light emitting device according to claim 4, wherein: The first emission unit emits a first color light, the second emission unit emits a second color light, and the third emission unit emits a third color light, and The first color light, the second color light, and the third color light have maximum emission wavelengths different from each other.

9. The light emitting device according to claim 8, wherein: The first color light is blue light, The second color light is green light, and The third color light is red light.

10. The light emitting device according to claim 1, wherein: The emission layer further includes a second 'emission layer, The interlayer includes a first emission unit, a first charge generation unit, and a second emission unit provided in sequence, The first emission unit includes the first emission layer, and The second' emission unit includes the second' emission layer.

11. The light emitting device according to claim 10, wherein: The second 'emission layer' includes a second 'quantum dot, and The second' quantum dots include a Group II-VI semiconductor compound.

12. A light-emitting device according to claim 7 or 11, wherein the Group II-VI semiconductor compound comprises CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe or any combination thereof.

13. The light emitting device according to claim 10, wherein: The first emission unit emits a first color light, and the second emission unit emits a second color light, and The first color light and the second color light have maximum emission wavelengths that are the same as or different from each other.

14. The light emitting device according to claim 13, wherein the first color light and the second color light are each blue light.

15. The light emitting device according to claim 1, further comprising: a first capping layer outside the first electrode; a second capping layer outside the second electrode; or both the first capping layer and the second capping layer.

16. An electronic device comprising the light emitting device according to any one of claims 1 to 15.

17. The electronic device of claim 16, further comprising a color filter, a color conversion layer, a touch screen layer, a polarizing layer, or any combination thereof.

18. The electronic device according to claim 16, further comprising: A thin film transistor, wherein: The thin film transistor includes a source electrode and a drain electrode, and The first electrode of the light emitting device is electrically connected to the source electrode or the drain electrode.

19. An electronic device comprising the light emitting device according to any one of claims 1 to 15.

20. The electronic device of claim 19, wherein the electronic device is one selected from the group consisting of a flat panel display, a curved display, a computer monitor, a medical monitor, a television, a billboard, an indoor light, an outdoor light, a signal light, a head-up display, a fully transparent display, a partially transparent display, a flexible display, a rollable display, a foldable display, a stretchable display, a laser printer, a telephone, a portable telephone, a tablet personal computer, a tablet phone, a personal digital assistant, a wearable device, a laptop computer, a digital camera, a video camera, a viewfinder, a microdisplay, a three-dimensional display, a virtual reality display, an augmented reality display, a vehicle, a video wall comprising a plurality of displays tiled together, a theater screen, a stadium screen, a light therapy device, and a sign.

Images