Control method, device, equipment, vehicle and storage medium of power supply system

Abstract

The present application relates to a control method, apparatus, device, vehicle, and storage medium for a power supply system, which is applied to a vehicle. The control method includes: obtaining the current state of the power supply system, which includes the current operating mode of the power supply system and the current temperature of the gallium nitride (GaN) device; determining the target operating state of the power supply system based on the current operating mode and the current temperature; the target operating state includes one of the following: a first operating state, a second operating state, and a shutdown state; the first operating state indicates that the power supply system operates at maximum output power; the second operating state indicates that the power supply system operates at target output power, and the target output power is less than the maximum output power; and switching the operating state of the power supply system to the target operating state. The present application controls the operating state of the power supply system so that the GaN device can operate safely even when the temperature is too high, thereby reducing the risk of pipe explosion and improving system stability.

Description

Technical Field

[0001] The present application relates to the field of automotive technology, and in particular to a control method and device, equipment, vehicle, and storage medium for a power supply system. Background Art

[0002] The rapid development of electric vehicle technology is placing higher demands on efficient, high-power-density power supply systems. Due to their excellent switching performance and low conduction losses, GaN devices are widely used in electric vehicle power supply systems to improve overall energy efficiency and system response speed. However, when operating at high power, GaN devices exhibit issues such as dynamic on-resistance (Rdson) and Rdson degradation. This can cause GaN device temperatures to rise, posing a risk of tube explosion and compromising the reliability and safety of power supply systems. Summary of the Invention

[0003] One of the objectives of the present application is to provide a control method for a power supply system to address the problems of dynamic on-resistance (Rdson) and Rdson attenuation in GaN devices during high-power operation in the prior art, which lead to increased temperature of the GaN devices and the risk of tube explosion; a second objective is to provide a control device for a power supply system; a third objective is to provide a computer device; a fourth objective is to provide a vehicle; a fifth objective is to provide a computer-readable storage medium; and a sixth objective is to provide a computer program product.

[0004] In order to achieve the above objectives, the technical solutions adopted in this application are as follows:

[0005] The present invention provides a method for controlling a power supply system, including:

[0006] Obtaining a current state of the power supply system; wherein the current state of the power supply system includes a current operating mode of the power supply system and a current temperature of the gallium nitride (GaN) device;

[0007] Determining a target operating state of the power supply system based on a current operating mode of the power supply system and a current temperature of the GaN device; wherein the target operating state of the power supply system includes one of the following: a first operating state, a second operating state, and a shutdown state, wherein the first operating state indicates that the power supply system operates at a maximum output power, and the second operating state indicates that the power supply system operates at a target output power, and the target output power is less than the maximum output power;

[0008] Switch the working state of the power supply system to the target working state.

[0009] According to the above technical means, the working state of the power supply system is controlled according to the current working mode of the power supply system and the current temperature of the GaN device. That is, the power supply system is dynamically controlled to operate according to the maximum output power, operate according to the target output power, or shut down. Therefore, even if the temperature of the GaN device is too high, it can work safely, thereby reducing the risk of GaN device tube explosion and improving the stability of the power supply system. Moreover, by accurately controlling the working state of the power supply system in different working modes, the power supply system can work safely in different working modes.

[0010] Furthermore, when the current working mode of the power supply system is the driving mode, the working state of the power supply system includes one of the following: a first working state, a shutdown state; based on the current working mode of the power supply system and the current temperature of the GaN device, the target working state of the power supply system is determined, including: when the current temperature of the GaN device is greater than the first temperature threshold and the current temperature of the GaN device is less than the second temperature threshold, the first working state is used as the target working state; wherein the first temperature threshold is the highest temperature at which the GaN device undergoes a target degree of aging in the driving mode, and the second temperature threshold is the highest temperature after the maximum aging of the GaN device in the driving mode; when the current temperature of the GaN device is not less than the second temperature threshold, the shutdown state is used as the target working state.

[0011] According to the above technical means, when the current working mode of the power supply system is the driving mode, the working state of the power supply system is dynamically determined according to the current temperature of the GaN device, the maximum temperature at which the target aging degree of the GaN device occurs in the driving mode, and the maximum temperature after the maximum aging of the GaN device in the driving mode, thereby improving the accuracy of the working state of the power supply system in the driving mode, and controlling the power supply system to shut down when the temperature of the GaN device is too high, which can reduce the damage of the GaN device due to overheating, thereby extending the service life of the device.

[0012] Furthermore, when the current operating mode of the power supply system is a charging mode or a discharging mode, the operating state of the power supply system includes one of the following: a second operating state, a shutdown state; based on the current operating mode of the power supply system and the current temperature of the GaN device, the target operating state of the power supply system is determined, including: when the current temperature of the GaN device is greater than a third temperature threshold and the current temperature of the GaN device is less than a fourth temperature threshold, the second operating state is used as the target operating state; wherein the third temperature threshold is the highest temperature at which the GaN device undergoes a target degree of aging in the target mode, the second temperature threshold is the highest temperature after the maximum aging of the GaN device in the target mode, and the target mode includes a charging mode or a discharging mode; when the current temperature of the GaN device is not less than the fourth temperature threshold, the shutdown state is used as the target operating state.

[0013] According to the above technical means, when the current working mode of the power supply system is the charging mode or the discharging mode, the working state of the power supply system is dynamically determined based on the current temperature of the GaN device, the maximum temperature at which the target aging degree of the GaN device occurs in the target mode, and the maximum temperature after the maximum aging of the GaN device in the target mode, thereby improving the accuracy of the working state of the power supply system in the target mode, thereby improving the overall performance of the power supply system.

[0014] Furthermore, the control method further includes: determining a target derating factor in a target mode based on a current temperature of the GaN device; and determining a target output power of the power supply system based on the target derating factor in the target mode.

[0015] The above technical approach uses the current temperature to determine the target derating factor, thereby determining the output power of the power supply system. This reduces the temperature rise and aging rate of GaN devices, thereby extending their service life.

[0016] Furthermore, the control method also includes: determining a fault detection result of the power supply system based on the current state of the power supply system; wherein the current state of the power supply system also includes the current water temperature of the water inlet of the power supply system and the current flow rate of the coolant at the water inlet, and the fault detection result of the power supply system indicates whether a fault occurs in the power supply system.

[0017] According to the above technical means, the power supply system is detected for faults based on the current water temperature at the water inlet and the current flow rate of the coolant at the water inlet, which can more accurately analyze whether the power supply system has a fault, thereby effectively improving the operating safety and stability of the system. According to the fault detection results, for non-product hardware problems, the fault can be reported to support engineers to conduct system fault troubleshooting; for product hardware problems, the power supply system can be replaced by reporting the fault, avoiding safety problems such as vehicle breakdown.

[0018] Further, in the case where the current working mode of the power supply system includes the driving mode, based on the current state of the power supply system, the fault detection result of the power supply system is determined, including at least one of the following: when the current temperature of the GaN device is greater than the first temperature threshold, the current temperature of the GaN device is less than the second temperature threshold, the current water temperature of the water inlet is less than or equal to the maximum water temperature of the power supply system, and the current flow rate of the coolant at the water inlet is equal to the maximum flow rate of the coolant at the water inlet, the first fault detection result is used as the fault detection result of the power supply system; wherein, the first fault detection result indicates that the power supply system has not failed; when the current temperature of the GaN device is greater than the first temperature threshold, the current temperature of the GaN device is less than the second temperature threshold, the current water temperature of the water inlet is greater than the maximum water temperature of the power supply system, and the current flow rate of the coolant at the water inlet is equal to the maximum flow rate of the coolant at the water inlet, the second fault detection result is used as the fault detection result of the power supply system; wherein, the second fault detection result indicates that the power supply system has failed and the type of the fault is the first fault type; when the current temperature of the GaN device is not less than the second temperature threshold, the current water temperature of the water inlet is greater than the maximum water temperature of the power supply system, and the current flow rate of the coolant at the water inlet is equal to the maximum flow rate of the coolant at the water inlet When the current water temperature of the device is less than or equal to the maximum water temperature of the power supply system and the current flow rate of the coolant at the water inlet is equal to the maximum flow rate of the coolant at the water inlet, the third fault detection result is used as the fault detection result of the power supply system; wherein, the third fault detection result indicates that a fault occurs in the power supply system and the type of the fault is the second fault type; when the current temperature of the GaN device is not less than the second temperature threshold, the current water temperature of the water inlet is less than or equal to the maximum water temperature of the power supply system, and the current flow rate of the coolant at the water inlet is less than the maximum flow rate of the coolant at the water inlet, the fourth fault detection result is used as the fault detection result of the power supply system; wherein, the fourth fault detection result indicates that a fault occurs in the power supply system and the type of the fault is the third fault type; when the current temperature of the GaN device is not less than the second temperature threshold, the current water temperature of the water inlet is greater than the maximum water temperature of the power supply system, and the current flow rate of the coolant at the water inlet is equal to the maximum flow rate of the coolant at the water inlet, the fifth fault detection result is used as the fault detection result of the power supply system; wherein, the fifth fault detection result indicates that a fault occurs in the power supply system and the type of the fault is the fourth fault type.

[0019] The above-mentioned technical approach uses the GaN device temperature, water inlet temperature, coolant flow rate at the water inlet, and various thresholds to determine the power supply system's fault detection results during driving mode. This allows for accurate identification of the power supply system's fault type during driving mode, enabling appropriate action to be taken, thereby improving the reliability and safety of the power supply system.

[0020] Further, when the current working mode of the power supply system includes a charging mode or a discharging mode, based on the current state of the power supply system, a fault detection result of the power supply system is determined, including at least one of the following: when the current temperature of the GaN device is greater than the third temperature threshold, the current temperature of the GaN device is less than the fourth temperature threshold, the current water temperature of the water inlet is less than or equal to the maximum water temperature of the power supply system, and the current flow rate of the coolant at the water inlet is equal to the maximum flow rate of the coolant at the water inlet, the sixth fault detection result is used as the fault detection result of the power supply system; wherein the sixth fault detection result indicates that a fault occurs in the power supply system and the fault type is the fifth fault type; when the current temperature of the GaN device is greater than the third temperature threshold, the current temperature of the GaN device is less than the fourth temperature threshold, the current water temperature of the water inlet is greater than the maximum water temperature of the power supply system, and the current flow rate of the coolant at the water inlet is equal to the maximum flow rate of the coolant at the water inlet, the seventh fault detection result is used as the fault detection result of the power supply system. Results; wherein, the seventh fault detection result indicates that a fault occurs in the power supply system and the fault type is the sixth fault type; when the current temperature of the GaN device is not less than the fourth temperature threshold, the current water temperature of the water inlet is less than or equal to the maximum water temperature of the power supply system, and the current flow rate of the coolant at the water inlet is equal to the maximum flow rate of the coolant at the water inlet, the third fault detection result is used as the fault detection result of the power supply system; when the current temperature of the GaN device is not less than the fourth temperature threshold, the current water temperature of the water inlet is less than or equal to the maximum water temperature of the power supply system, and the current flow rate of the coolant at the water inlet is less than the maximum flow rate of the coolant at the water inlet, the fourth fault detection result is used as the fault detection result of the power supply system; when the current temperature of the GaN device is not less than the fourth temperature threshold, the current water temperature of the water inlet is greater than the maximum water temperature of the power supply system, and the current flow rate of the coolant at the water inlet is equal to the maximum flow rate of the coolant at the water inlet, the fifth fault detection result is used as the fault detection result of the power supply system.

[0021] The above-mentioned technical means determine the power supply system fault detection results in charging or discharging mode based on the temperature of the GaN device, the water temperature at the water inlet, the coolant flow rate, and various thresholds. This allows the precise identification of the power supply system fault type in charging or discharging mode and the implementation of appropriate treatment measures, thereby improving the reliability and safety of the power supply system in either charging or discharging mode, and thus ensuring the stability and safety of the entire vehicle during driving.

[0022] Furthermore, when the current operating mode of the power supply system includes a charging mode, the control method also includes: determining a current cooling demand flow rate of the coolant at the water inlet of the power supply system based on the current state of the power supply system; wherein the current state of the power supply system also includes current operating parameters of the power supply system, and the current operating parameters of the power supply system include the current output voltage and the current water temperature at the water inlet; and requesting the current cooling demand flow rate from the vehicle's thermal management system to ensure that the power supply system is in a high charging efficiency state.

[0023] According to the above technical means, by determining the cooling demand flow based on the current output voltage and water inlet water temperature, and requesting the corresponding flow from the thermal management system, the coolant flow can be dynamically adjusted to adapt to the operating status of the power supply system, thereby ensuring that the power supply system operates in a high charging efficiency state, thereby improving the charging efficiency and reliability of the entire vehicle.

[0024] Furthermore, the control method also includes: determining a current charging efficiency of the power supply system based on current operating parameters of the power supply system; wherein the current operating parameters also include a current input voltage of the power supply system, a current input current of the power supply system, and a current output current of the power supply system; determining a target flow rate of the coolant at the water inlet based on the current charging efficiency of the power supply system and a current cooling demand flow rate of the coolant at the water inlet; when the target flow rate is greater than the current cooling demand flow rate, requesting the target flow rate from the vehicle's thermal management system, and determining a next charging efficiency of the power supply system based on the next operating parameters of the power supply system.

[0025] The above technical approach determines the current charging efficiency based on the current operating parameters of the power supply system and the target flow rate based on the current cooling demand flow rate of the coolant at the water inlet. If the target flow rate exceeds the current cooling demand flow rate, the thermal management system requests the target flow rate and determines the next charging efficiency based on the next operating parameters. This allows for real-time adjustment of the coolant flow rate, ensuring that the power supply system receives sufficient coolant flow under different operating conditions, thereby preventing overheating and damage.

[0026] Furthermore, based on the current charging efficiency of the power supply system and the current cooling demand flow of the coolant at the water inlet, the target flow of the coolant at the water inlet is determined, including: when the current charging efficiency of the power supply system is equal to the target charging efficiency, using the current cooling demand flow as the target flow; when the current charging efficiency is not greater than the target charging efficiency, determining the target flow based on the current cooling demand flow and the maximum flow of the coolant at the water inlet.

[0027] The above technical approach dynamically determines the target flow rate based on the current charging efficiency and the target charging efficiency. This improves the accuracy of the target flow rate, ensuring that the power supply system operates in the high-efficiency range, thereby maintaining high charging efficiency. This, in turn, avoids the risk of GaN device overheating or tube explosion due to insufficient cooling, thereby improving the reliability and safety of the power supply system.

[0028] Furthermore, based on the current cooling demand flow and the maximum flow of the coolant at the water inlet, the target flow is determined, including: when the current cooling demand flow is equal to the maximum flow of the coolant at the water inlet, the maximum flow of the coolant at the water inlet is used as the target flow; when the current cooling demand flow is less than the maximum flow of the coolant at the water inlet, the target flow is determined based on the current cooling demand flow and the flow adjustment step.

[0029] The above technical approach dynamically determines the target flow rate based on the current cooling demand flow rate and the maximum coolant flow rate at the water inlet. This allows the target flow rate to be gradually adjusted to meet the cooling needs of the power supply system, ensuring that the power supply system operates in the high-efficiency range and maintaining high charging efficiency, provided that the current cooling demand flow rate does not exceed the maximum coolant flow rate.

[0030] An embodiment of the present application provides a control device for a power supply system, comprising:

[0031] An acquisition module is used to acquire the current state of the power supply system; wherein the current state of the power supply system includes the current operating mode of the power supply system and the current temperature of the GaN device;

[0032] a first determining module, configured to determine a target operating state of the power supply system based on a current operating mode of the power supply system and a current temperature of the GaN device; wherein the target operating state of the power supply system includes one of the following: a first operating state, a second operating state, and a shutdown state, wherein the first operating state indicates that the power supply system operates at a maximum output power, and the second operating state indicates that the power supply system operates at a target output power, and the target output power is less than the maximum output power;

[0033] The switching module is used to switch the working state of the power supply system to the target working state.

[0034] An embodiment of the present application provides a computer device including a memory and a processor, wherein the memory stores a computer program that can be run on the processor, and when the processor executes the program, some or all of the steps in the above method are implemented.

[0035] An embodiment of the present application provides a vehicle, comprising the above-mentioned computer device.

[0036] An embodiment of the present application provides a computer-readable storage medium having a computer program stored thereon, which implements some or all of the steps in the above method when executed by a processor.

[0037] An embodiment of the present application provides a computer program product, including a computer program or instructions. When the computer program or instructions are executed by a processor, some or all of the steps in the above method are implemented.

[0038] Beneficial effects of this application:

[0039] (1) By dynamically controlling the working state of the power supply system, the GaN device can work safely even if the temperature is too high, thereby reducing the risk of GaN device explosion and improving the stability of the power supply system; and by accurately controlling the working state of the power supply system in different working modes, the power supply system can work safely in different working modes;

[0040] (2) For GaN devices with high temperature and high aging degree, by derating the output power of the power supply system, the temperature rise rate and aging rate of the GaN device can be reduced, thereby increasing the service life of the GaN device;

[0041] (3) Based on the current water temperature at the water inlet and the current flow rate of the coolant at the water inlet, the power supply system is detected for faults, which can more accurately analyze whether the power supply system has failed, thereby effectively improving the operational safety and stability of the system;

[0042] (4) Based on the fault detection results, for non-product hardware issues, the fault can be reported to support engineers for system troubleshooting; for product hardware issues, the power supply system can be replaced by reporting the fault to avoid safety issues such as vehicle breakdown;

[0043] (5) By dynamically adjusting the coolant flow rate to adapt to the operating state of the power supply system under different output voltages of the power supply system and the temperature of the coolant at different water inlets, the power supply system can be ensured to operate at a high charging efficiency, thereby improving the charging efficiency and reliability of the entire vehicle;

[0044] (6) By dynamically determining the target flow rate based on the current charging efficiency and the target charging efficiency, the accuracy of the target flow rate can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] Figure 1 A schematic diagram of the implementation process of a control method for a power supply system proposed in an embodiment of the present application Figure 1 ;

[0046] Figure 2 A schematic diagram of the hardware structure of a power supply system provided in an embodiment of the present application and its connection with other hardware;

[0047] Figure 3 A schematic diagram of the implementation process of a control method for a power supply system provided in an embodiment of the present application Figure 2 ;

[0048] Figure 4 A schematic diagram of the implementation process of a control method for a power supply system provided in an embodiment of the present application Figure 3 ;

[0049] Figure 5 A schematic diagram of the structure of a control device for a power supply system proposed in an embodiment of the present application;

[0050] Figure 6 A hardware entity diagram of a computer device proposed in an embodiment of the present application. DETAILED DESCRIPTION

[0051] The following will describe the embodiments of the present application with reference to the accompanying drawings and preferred embodiments. Those skilled in the art can easily understand the other advantages and effects of the present application from the contents disclosed in this specification. The present application can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present application. It should be understood that the preferred embodiments are only for the purpose of illustrating the present application and are not intended to limit the scope of protection of the present application.

[0052] It should be noted that the illustrations provided in the following embodiments are only schematic illustrations of the basic concept of the present application. Therefore, the illustrations only show components related to the present application and are not drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component can be changed at will, and the component layout type may also be more complicated.

[0053] In the following description, reference is made to “some embodiments”, which describes a subset of all possible embodiments, but it will be understood that “some embodiments” may be the same subset or different subsets of all possible embodiments and may be combined with each other without conflict.

[0054] In the following description, the terms "first\second\third" involved are merely used to distinguish similar objects and do not represent a specific ordering of the objects. It can be understood that "first\second\third" can be interchanged with a specific order or sequence where permitted, so that the embodiments of the present application described herein can be implemented in an order other than that illustrated or described herein.

[0055] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art to which this application pertains. The terms used herein are for the purpose of describing the embodiments of this application only and are not intended to limit this application.

[0056] The present application embodiment proposes a control method for a power supply system, which is applied to a vehicle. The power supply system includes a GaN device, such as Figure 1 As shown, the control method includes the following steps S101 to S103, wherein:

[0057] Step S101: Acquire the current state of the power supply system; wherein the current state of the power supply system includes the current operating mode of the power supply system and the current temperature of the GaN device;

[0058] Here, the power supply system, also known as the Direct Current On-Board Charger (DC-OBC), has the main function of charging the power battery, supplying power to the low-voltage system, and discharging external loads through plug-ins and cables.

[0059] The power supply system includes GaN (gallium nitride) devices. GaN devices are semiconductor devices based on gallium nitride materials. They have the advantages of low conduction loss, high switching frequency, and high power density. They are used to achieve high-efficiency, high-frequency, and high-power density power conversion and control.

[0060] The current working mode is the operating state of the power supply system in different application scenarios, including driving mode, charging mode and discharging mode.

[0061] In some embodiments, the power supply system supports monitoring via dedicated software to obtain the operating mode of the power supply system.

[0062] In some implementations, a temperature sensor is used to collect the temperature of the GaN device at a set temperature sampling point to obtain the current temperature of the GaN device. After collecting the device temperature, the temperature of the GaN device is reported to the microcontroller unit (MCU) for subsequent logic determination.

[0063] In some implementations, the placement of temperature sampling points can be adjusted based on the power board layout. In one example, for a single-board, single-stage full-bridge solution, one temperature sampling point can be deployed to monitor the GaN device temperature. In another example, for a single-board, two-stage full-bridge solution, at least two temperature sampling points should be deployed to monitor the GaN device temperature. This application does not limit the specific local locations of the temperature sampling points.

[0064] In some embodiments, the MCU is located on the main control board and communicates with the power board's digital signal processor (DSP) chip via the main control board's Controller Area Network (CAN) transceiver. The DSP chip samples voltage, current, and temperature and reports them to the MCU.

[0065] In some embodiments, temperature measurement is achieved by integrating a temperature sensor into the spot pyrometer, wherein the temperature sensor may be a thermocouple, a thermal resistor, a thermistor, a semiconductor temperature sensor, etc. The present application does not limit the type of the temperature sensor.

[0066] Step S102: Determining a target operating state of the power supply system based on a current operating mode of the power supply system and a current temperature of the GaN device; wherein the target operating state of the power supply system includes one of the following: a first operating state, a second operating state, and a shutdown state, wherein the first operating state indicates that the power supply system operates at a maximum output power, and the second operating state indicates that the power supply system operates at a target output power, wherein the target output power is less than the maximum output power.

[0067] Here, the working state includes a first working state, a second working state, a shutdown state, and the like.

[0068] The first working state is that the power supply system operates at maximum output power, where the maximum output power refers to the highest power value that the power supply system can continuously output under the premise of safe and stable operation, reflecting the upper limit of the power supply system's capacity.

[0069] The second working state is that the power supply system operates according to the target output power, wherein the target output power refers to the power after the output power of the power supply system is derated according to the current state of the power supply system, and the target output power is less than the maximum output power.

[0070] The shutdown state means that the power supply system stops running completely and no longer provides power to the load.

[0071] In some embodiments, the target operating state of the power supply system is dynamically adjusted based on the correspondence between the temperature of the GaN device in the current operating mode and the operating state of the power supply system, that is, the power supply system is controlled to operate in the first operating state, the second operating state or the shutdown state.

[0072] In some embodiments, when the current operating mode is the driving mode, when the current temperature of the GaN device is greater than the first temperature threshold and the current temperature of the GaN device is less than the second temperature threshold, the power supply system maintains the maximum output power unchanged and continues to operate; when the current temperature of the GaN device is not less than the second temperature threshold, the power supply system shuts down; wherein the first temperature threshold is the highest temperature at which the GaN device undergoes a target aging degree in the driving mode, and the second temperature threshold is the highest temperature after the maximum aging of the GaN device in the driving mode.

[0073] In some embodiments, when the current operating mode is the target mode, when the current temperature of the GaN device is greater than the third temperature threshold and the current temperature of the GaN device is less than the fourth temperature threshold, the output power of the power supply system is derated so that the power supply system operates according to the target output power; when the current temperature of the GaN device is not less than the fourth temperature threshold, the power supply system is shut down, wherein the third temperature threshold is the highest temperature at which the GaN device undergoes a target degree of aging in the target mode, and the fourth temperature threshold is the highest temperature after maximum aging of the GaN device in the target mode, and the target mode includes a charging mode or a discharging mode.

[0074] Step S103: Switching the working state of the power supply system to the target working state.

[0075] In some embodiments, the power supply system operates in a target operating state, so that the power supply system can operate normally even when the GaN device ages, thereby improving the stability of the power supply system.

[0076] In some embodiments, if the operating state of the power supply system is inconsistent with the target operating state, the operating state of the power supply system is switched to the target operating state for operation. If the operating state of the power supply system is consistent with the target operating state, the power supply system continues to operate in the target operating state.

[0077] In the embodiment of the present application, the working state of the power supply system is controlled according to the current working mode of the power supply system and the current temperature of the GaN device, that is, the power supply system is dynamically controlled to operate according to the maximum output power, operate according to the target output power, or shut down, so that even if the temperature of the GaN device is too high, it can work safely, thereby reducing the risk of GaN device tube explosion and improving the stability of the power supply system; and by accurately controlling the working state of the power supply system in different working modes, the power supply system can work safely in different working modes.

[0078] In some embodiments, when the current working mode of the power supply system is the driving mode, the working state of the power supply system includes one of the following: a first working state and a shutdown state; the above step S102 may include the following steps S1021 to S1022:

[0079] Step S1021: When the current temperature of the GaN device is greater than a first temperature threshold and less than a second temperature threshold, setting the first operating state as the target operating state; wherein the first temperature threshold is the maximum temperature at which the GaN device undergoes a target aging degree in the driving mode, and the second temperature threshold is the maximum temperature after maximum aging of the GaN device in the driving mode;

[0080] Here, the first temperature threshold is the maximum temperature that the GaN device can withstand when a target aging degree occurs in the driving mode.

[0081] The second temperature threshold is the maximum temperature that the GaN device can withstand under the maximum aging degree in the driving mode, and the second temperature threshold is higher than the first temperature threshold.

[0082] The maximum temperature after maximum aging of a GaN device refers to the temperature at which the GaN device reaches its maximum preset aging level (i.e., fully aged). The maximum aging level can be any suitable aging level, such as 80% aging, 90% aging, or 100% aging.

[0083] The aging degree of GaN devices refers to the gradual degradation of device performance (such as on-resistance Rdson) during long-term use due to factors such as thermal stress and electrical stress.

[0084] In some embodiments, the degree of aging is typically assessed through dynamic high-temperature operating life (DHTOL) testing. The resulting value, after full-lifecycle thermal aging verification, is strongly correlated with device specifications, process, and design. DHTOL refers to the time a material or device maintains its performance and structural integrity after undergoing a series of thermal cycling tests under high-temperature conditions. This test is often used to assess the durability and reliability of materials or components under extreme temperature conditions.

[0085] GaN device aging refers to the degradation of device performance parameters during the DHTOL test.

[0086] Aging can be categorized into multiple levels, such as 10%, 20%, and 30%, corresponding to varying performance degradation rates. Determining the aging level helps determine the remaining life of a device and provides a basis for subsequent power adjustments and fault prediction.

[0087] In some embodiments, the target aging degree can be determined as follows: during the DHTOL test, when the temperature of the GaN device reaches the target temperature, the corresponding test duration is used as the target aging degree. For example, when the test cycle of the GaN device is 15% and the temperature of the GaN device reaches the target temperature, 15% of the test cycle is determined as the target aging degree. For another example, when the test cycle of the GaN device is 25% and the temperature of the GaN device reaches the target temperature, 25% of the test cycle is determined as the target aging degree. It can be understood that the target aging degree is related to the target temperature, and the target aging degree is different for different target temperatures.

[0088] The target temperature is determined based on the maximum temperature defined for the GaN device product. For example, the target temperature could be 70% or 50% of the product's maximum temperature. It's understood that when the GaN device temperature is lower than the target temperature, the device can operate normally, and generally, there's no risk of tube explosion. However, when the GaN device temperature is higher than the target temperature, there may be a risk of tube explosion, requiring derating or shutdown.

[0089] In some embodiments, the first temperature threshold is obtained by experimental calibration in a driving mode. The GaN device can be tested under first test conditions corresponding to the driving mode to collect the temperature of the GaN device and obtain the first temperature threshold. The first test conditions include testing under conditions where the direct current-direct current (DCDC) converter of the power supply system is fully loaded, the water temperature at the water inlet of the power supply system is at its highest, and the coolant flow rate at the water inlet is at its maximum.

[0090] In some embodiments, the first temperature threshold can be obtained by establishing a simulation model to predict the temperature of the GaN device at which the target aging level occurs. The simulation model can be any model capable of predicting the temperature of the GaN device, and this application is not limited thereto. In one example, a finite element analysis (FEA) model is used for modeling and simulation to predict the temperature of the GaN device at which the target aging level occurs, thereby obtaining the first temperature threshold.

[0091] In some embodiments, the second temperature threshold is obtained by performing experimental calibration in a driving mode. The GaN device can be tested under the first test conditions corresponding to the driving mode to collect the temperature of the GaN device and obtain the second temperature threshold.

[0092] In some embodiments, the second temperature threshold can be obtained by establishing a simulation model to predict the temperature of the GaN device at the maximum level of aging. The simulation model can be any model capable of predicting the temperature of a GaN device, and this application is not limited thereto. In one example, a finite element analysis (FEA) model is used for modeling and simulation to predict the temperature of the GaN device at the maximum level of aging to obtain the second temperature threshold.

[0093] In some embodiments, when the current temperature of the GaN device is greater than the first temperature threshold and the current temperature of the GaN device is less than the second temperature threshold, the first operating state is used as the target operating state, that is, in driving mode, when the GaN device is not completely aged, the power supply system operates at maximum output power.

[0094] Step S1022: When the current temperature of the GaN device is not less than the second temperature threshold, the shutdown state is used as the target operating state.

[0095] In some embodiments, when the current temperature of the GaN device is not less than the second temperature threshold, the GaN device is completely aged, and the power supply system should be shut down to prevent the GaN device from exploding.

[0096] In an embodiment of the present application, when the current working mode of the power supply system is the driving mode, the working state of the power supply system is dynamically determined based on the current temperature of the GaN device, the maximum temperature at which the target aging degree of the GaN device occurs in the driving mode, and the maximum temperature after the maximum aging of the GaN device in the driving mode, thereby improving the accuracy of the working state of the power supply system in the driving mode, and controlling the power supply system to shut down when the temperature of the GaN device is too high, which can reduce damage to the GaN device due to overheating, thereby extending the service life of the device.

[0097] In some embodiments, when the current working mode of the power supply system is the charging mode or the discharging mode, the working state of the power supply system includes one of the following: the second working state and the shutdown state; the above step S102 may include the following steps S1023 to S1024:

[0098] Step S1023: When the current temperature of the GaN device is greater than a third temperature threshold and the current temperature of the GaN device is less than a fourth temperature threshold, setting the second operating state as the target operating state; wherein the third temperature threshold is the maximum temperature at which the GaN device experiences a target degree of aging in the target mode, and the fourth temperature threshold is the maximum temperature after maximum aging of the GaN device in the target mode, and the target mode includes the charging mode or the discharging mode;

[0099] Here, the third temperature threshold is the maximum temperature that the GaN device can withstand when a target aging degree occurs in the target mode.

[0100] The fourth temperature threshold is the maximum temperature that the GaN device can withstand under the maximum aging degree in the target mode. The fourth temperature threshold is higher than the second temperature threshold to reflect the performance degradation of the GaN device after aging.

[0101] The target mode refers to the current operating mode of the power supply system, including charging mode or discharging mode. The temperature threshold of the GaN device may vary in different target modes. The power supply system determines whether to enter the second operating state or shutdown state based on the current operating mode and the temperature of the GaN device.

[0102] In some embodiments, the third temperature threshold may be obtained by performing experimental calibration in a target mode. The GaN device may be tested under test conditions corresponding to the target mode, and the temperature of the GaN device may be collected to obtain the third temperature threshold.

[0103] Among them, when the target mode is the charging mode, the corresponding second test condition is to test under the conditions of full charging load of the power supply system (that is, the maximum power output of the power supply system), half load of DCDC, the maximum water temperature of the water inlet of the power supply system, and the maximum flow rate of the coolant at the water inlet.

[0104] When the target mode is the discharge mode, the corresponding third test condition is to test under the conditions of full discharge load of the power supply system (i.e., the maximum power output of the power supply system), half load of DCDC, the maximum water temperature of the water inlet of the power supply system, and the maximum flow rate of the coolant at the water inlet.

[0105] In some embodiments, the third temperature threshold can be obtained by establishing a simulation model to predict the temperature of the GaN device at a target aging level. The simulation model can be any model capable of predicting the temperature of the GaN device, and this application is not limited thereto. In one example, a finite element analysis (FEA) model is used for modeling and simulation to predict the temperature of the GaN device at a target aging level to obtain the third temperature threshold.

[0106] In some embodiments, the fourth temperature threshold may be obtained by performing experimental calibration in a target mode. The GaN device may be tested under test conditions corresponding to the target mode, and the temperature of the GaN device may be collected to obtain the fourth temperature threshold.

[0107] In some embodiments, the fourth temperature threshold can be obtained by establishing a simulation model to predict the temperature of the GaN device at the maximum age. The simulation model can be any model capable of predicting the temperature of a GaN device, and this application is not limited thereto. In one example, a finite element analysis (FEA) model is used for modeling and simulation to predict the temperature of the GaN device at the maximum age to obtain the fourth temperature threshold.

[0108] In some embodiments, the second operating state reduces output power to protect the GaN device and extend its service life when the device temperature is high but has not yet reached a shutdown threshold. For example, when the GaN device temperature is high but has not yet reached a shutdown threshold, the power supply system may enter the second operating state to reduce power output, thereby preventing damage to the device from overheating.

[0109] In some embodiments, the shutdown state refers to a state in which the power supply system ceases operation to protect the power supply system when it detects excessive device temperature or other abnormal conditions. This state is typically used to automatically shut down the power supply system when device temperature exceeds a safety threshold to prevent device damage or failure. For example, when the GaN device temperature exceeds the fourth temperature threshold, the power supply system enters the shutdown state to prevent device overheating, which could lead to pipe explosion or other safety issues.

[0110] In actual applications, the power supply system determines whether to enter the second operating state or the shutdown state based on the current operating mode (charging mode or discharging mode) and the current temperature of the GaN device. For example, in charging mode, if the GaN device temperature is high but has not reached the shutdown threshold, the power supply system enters the second operating state and reduces output power. If the temperature continues to rise and exceeds the shutdown threshold, the power supply system enters the shutdown state and stops operating to protect the device. This ensures that the power supply system dynamically adjusts its operating state based on the temperature changes of the GaN device in different operating modes, thereby ensuring system safety while improving system reliability and service life.

[0111] Step S1024: when the current temperature of the GaN device is not less than the fourth temperature threshold, use the shutdown state as the target operating state.

[0112] In an embodiment of the present application, when the current operating mode of the power supply system is the charging mode or the discharging mode, the operating state of the power supply system is dynamically determined based on the current temperature of the GaN device, the maximum temperature at which the target aging degree of the GaN device occurs in the target mode, and the maximum temperature after maximum aging of the GaN device in the target mode, thereby improving the accuracy of the operating state of the power supply system in the target mode, thereby improving the overall performance of the power supply system.

[0113] In some embodiments, the control method further includes the following steps S104 to S105:

[0114] Step S104: determining a target derating factor in the target mode based on the current temperature of the GaN device;

[0115] In some embodiments, a target derating factor refers to a factor used to adjust the output power of the power supply system to ensure the normal operation of the GaN device in the target operating mode. The determination of the target derating factor requires comprehensive consideration of the current aging level and current temperature of the GaN device. The higher the aging level, the lower the temperature tolerance of the GaN device, necessitating a larger derating factor to reduce the output power of the power supply system to prevent the GaN device from overheating. Furthermore, the higher the current temperature, the lower the heat dissipation capability of the GaN device, requiring a larger derating factor.

[0116] In some embodiments, a correspondence between the temperature of the GaN device and the derating factor of the output power under target operating conditions is predetermined, and the target derating factor is determined based on the current temperature of the GaN device under the target operating conditions and the correspondence between the temperature of the GaN device under the target operating conditions and the derating factor. In one example, based on the correspondence between the temperature of the GaN device under the target operating conditions and the target derating factor, it can be determined that when the current temperature is 60 degrees Celsius, the corresponding target derating factor is 0.8.

[0117] In some embodiments, the target derating factor can be determined in the following manner: first, calibrate the correspondence between the aging degree and temperature of the GaN device in the target operating mode; second, calibrate the correspondence between the aging degree of the GaN device in the target operating mode and the derating factor of the output power of the power supply system; third, determine the correspondence between the temperature of the GaN device in the target operating mode and the derating factor of the output power of the power supply system based on the correspondence between the aging degree and temperature of the GaN device in the target operating mode and the correspondence between the aging degree of the GaN device in the target operating mode and the output power of the power supply system; finally, determine the target derating factor in the target mode based on the current temperature of the target GaN device and the correspondence between the temperature of the GaN device in the target operating mode and the derating factor of the output power of the power supply system.

[0118] In some embodiments, under test conditions corresponding to the target operating mode, GaN devices with different aging degrees are tested to obtain the temperatures of the GaN devices at different aging degrees, thereby obtaining the corresponding relationship between the aging degree and temperature of the GaN device under the target operating mode.

[0119] In some embodiments, the correspondence between the aging degree of the GaN device in the target operating mode and the derating factor of the output power of the power supply system can be calibrated according to the following method: (1) obtaining the real-time input voltage, input current, output voltage, output current and surface temperature of the GaN device of the power supply system; (2) reducing the output power of the power supply system according to the power step frequency, wherein the power step frequency can be any power, for example, 0.1 kilowatt (kW), 0.2 kW, etc.; (3) when the current temperature of the GaN device is consistent with the highest temperature at which the target aging degree occurs, calculating the derating factor of the output power according to the following formula:

[0120] (1-1);

[0121] Where K represents the derating factor of the output power. For the charging mode, Indicates the real-time output voltage of the DC terminal of the power supply system before power reduction. Indicates the real-time output voltage of the DC terminal of the power supply system after power reduction. Indicates the real-time output current of the DC end of the power supply system before power reduction. Indicates the real-time output current of the DC terminal of the power supply system after power reduction; for the discharge mode, Indicates the real-time output voltage of the AC end of the power supply system before power reduction. Indicates the real-time output voltage of the AC end of the power supply system after power reduction. Indicates the real-time output current of the AC end of the power supply system before power reduction. Indicates the real-time output current of the AC end of the power supply system after power reduction.

[0122] In some embodiments, the derating factors of GaN devices with different aging degrees are calibrated to obtain a mapping relationship between the aging degree of the GaN device and the derating factor of the output power of the power supply system in the target working mode.

[0123] By determining the target derating factor based on the GaN device's temperature, the output power of the power supply system can be dynamically adjusted to keep the GaN device operating within a safe temperature range. This effectively prevents performance degradation or damage caused by device overheating, thereby improving system stability and reliability.

[0124] Step S105: determining the target output power of the power supply system based on the target derating factor in the target mode.

[0125] Here, the target output power refers to the output power of the power supply system adjusted according to the target derating factor in the target operating mode.

[0126] In some implementations, the target output power may be determined based on the maximum output power in the current operating mode and the target derating factor. In one example, when the maximum output power is 100 kW and the target derating factor is 0.8, the target output power is 80 kW.

[0127] In some embodiments, the target output power can be adjusted by controlling parameters such as the switching frequency and duty cycle of the power supply system.

[0128] In some implementations, by adjusting the output power of the power supply system, the power supply system can operate safely under different operating conditions, thereby effectively extending the service life of the GaN device and improving the overall efficiency and reliability of the system.

[0129] In the embodiments of the present application, the target derating factor is determined by the current temperature, thereby determining the output power of the power supply system. Thus, for high-temperature GaN devices, by derating the output power of the power supply system, the temperature rise rate and aging rate of the GaN devices can be reduced, thereby increasing the service life of the GaN devices.

[0130] In some embodiments, the control method further includes the following step S106:

[0131] Step S106: Based on the current state of the power supply system, determine the fault detection result of the power supply system; wherein the current state of the power supply system also includes the current water temperature of the water inlet of the power supply system and the current flow rate of the coolant at the water inlet, and the fault detection result of the power supply system indicates whether the power supply system has a fault.

[0132] Here, the current water temperature at the water inlet refers to the temperature of the coolant entering the cooling circuit of the power supply system. This temperature directly affects the heat dissipation efficiency of the power supply system's internal components and is a key parameter for determining whether the power supply system is overheating. Water temperature is typically collected using a temperature sensor placed at the water inlet. The sensor transmits real-time temperature data to the main control unit for processing and analysis.

[0133] The current coolant flow rate refers to the volume of coolant flowing through the power supply system's cooling circuit per unit time. This flow rate determines the cooling system's heat dissipation capacity and is a key factor affecting the temperature of components within the power supply system. Flow rate is typically collected using a flow sensor, which transmits real-time flow data to the main control unit, which is used to determine whether the cooling system is functioning properly.

[0134] The fault detection result indicates whether a fault has occurred in the power supply system, based on its current status. This result can be "Normal" or "Fault," further categorized by fault type, such as "Product Overtemperature Fault," "Water Overtemperature Fault," or "Water Pump Abnormal Fault."

[0135] In some implementations, the current state of the power supply system is acquired in real time, and a fault detection result of the power supply system is determined based on the current state of the power supply system.

[0136] In some embodiments, the fault detection result of the power supply system is determined based on the current state of the power supply system, combined with the pre-calibrated maximum temperature of the GaN device at the target aging level, and the maximum temperature of the GaN device after maximum aging.

[0137] In some embodiments, a machine learning algorithm (such as a neural network) is used to train historical fault data to establish a fault classification model; and based on the current state of the power supply system, the fault classification model is used to determine the fault detection result of the power supply system.

[0138] In an embodiment of the present application, fault detection of the power supply system is performed based on the current water temperature of the water inlet and the current flow rate of the coolant at the water inlet, which can more accurately analyze whether a fault has occurred in the power supply system, thereby effectively improving the operational safety and stability of the system.

[0139] In some embodiments, when the current operating mode of the power supply system includes the driving mode, step S106 includes at least one of the following steps S1061 to S1065:

[0140] Step S1061: When the current temperature of the GaN device is greater than a first temperature threshold, the current temperature of the GaN device is less than a second temperature threshold, the current water temperature of the water inlet is less than or equal to the maximum water temperature of the power supply system, and the current flow rate of the coolant at the water inlet is equal to the maximum flow rate of the coolant at the water inlet, taking the first fault detection result as the fault detection result of the power supply system; wherein the first fault detection result indicates that the power supply system has not failed;

[0141] In some embodiments, in driving mode, when the temperature of the GaN device is between a first temperature threshold and a second temperature threshold, the water temperature at the water inlet is less than or equal to the maximum water temperature, and the coolant flow rate reaches its maximum value, the power supply system determines that no fault has occurred and can continue normal operation. The fault detection result is determined to be a first fault detection result, indicating that no fault has occurred in the power supply system. This judgment mechanism ensures that the system can maintain maximum output power when the device temperature is within a safe range, thereby improving overall efficiency.

[0142] Step S1062: When the current temperature of the GaN device is greater than a first temperature threshold, the current temperature of the GaN device is less than a second temperature threshold, the current water temperature of the water inlet is greater than the maximum water temperature of the power supply system, and the current flow rate of the coolant at the water inlet is equal to the maximum flow rate of the coolant at the water inlet, taking the second fault detection result as the fault detection result of the power supply system; wherein the second fault detection result indicates that a fault has occurred in the power supply system and the type of the fault is the first fault type;

[0143] In some embodiments, in driving mode, when the water temperature at the water inlet exceeds the maximum water temperature of the power supply system, this indicates that the cooling system may be unable to effectively dissipate heat, resulting in an increase in the temperature of the GaN device. In this case, even if the temperature of the GaN device remains between the first temperature threshold and the second temperature threshold, the power supply system may determine that a fault has occurred due to the excessively high coolant temperature. In this case, the fault detection result may be determined to be the second fault detection result, indicating that a fault has occurred in the power supply system and that the fault type is the first fault type, namely, a water overtemperature fault.

[0144] Step S1063: When the current temperature of the GaN device is not less than the second temperature threshold, the current water temperature of the water inlet is less than or equal to the maximum water temperature of the power supply system, and the current flow rate of the coolant at the water inlet is equal to the maximum flow rate of the coolant at the water inlet, taking the third fault detection result as the fault detection result of the power supply system; wherein the third fault detection result indicates that a fault has occurred in the power supply system and the type of the fault is the second fault type;

[0145] In some embodiments, in driving mode, when the temperature of the GaN device reaches or exceeds the second temperature threshold, it indicates that the temperature of the GaN device has entered a dangerous zone. Even if the water temperature at the water inlet is normal and the flow rate of the coolant reaches the maximum value, the power supply system is still judged to be faulty. At this time, the fault detection result can be determined to be the third fault detection result. The third fault detection result indicates that a fault has occurred in the power supply system and the type of the fault is the second fault type, i.e., a product overtemperature shutdown fault.

[0146] Step S1064: When the current temperature of the GaN device is not less than the second temperature threshold, the current water temperature of the water inlet is less than or equal to the maximum water temperature of the power supply system, and the current flow rate of the coolant at the water inlet is less than the maximum flow rate of the coolant at the water inlet, taking the fourth fault detection result as the fault detection result of the power supply system; wherein the fourth fault detection result indicates that a fault has occurred in the power supply system and the type of the fault is the third fault type;

[0147] In some embodiments, in driving mode, when the temperature of the GaN device reaches or exceeds the second temperature threshold and the water temperature at the water inlet is normal, but the coolant flow rate does not reach the maximum value, this indicates a possible cooling system anomaly, such as a water pump failure or flow control anomaly. In this case, the fault detection result may be determined to be the fourth fault detection result, indicating a fault in the power supply system and the third fault type, namely, an abnormal water pump shutdown.

[0148] Step S1065: When the current temperature of the GaN device is not less than the second temperature threshold, the current water temperature of the water inlet is greater than the maximum water temperature of the power supply system, and the current flow rate of the coolant at the water inlet is equal to the maximum flow rate of the coolant at the water inlet, the fifth fault detection result is used as the fault detection result of the power supply system; wherein, the fifth fault detection result indicates that a fault has occurred in the power supply system and the type of the fault is the fourth fault type.

[0149] In some embodiments, in driving mode, when the temperature of the GaN device reaches or exceeds the second temperature threshold, the water temperature at the water inlet exceeds the maximum water temperature, and the coolant flow rate reaches the maximum value, it indicates that the cooling system is unable to effectively dissipate heat, resulting in excessive GaN device temperature. In this case, the fault detection result can be determined to be the fifth fault detection result, which indicates a fault in the power supply system and the fault type is the fourth fault type, namely, a water overtemperature shutdown fault.

[0150] In the embodiment of the present application, the power supply system fault detection results are determined by combining the temperature of the GaN device, the water temperature at the water inlet, and the flow rate of the coolant at the water inlet in the driving mode. This allows the power supply system fault type to be accurately identified in the driving mode, allowing appropriate treatment measures to be taken, thereby improving the reliability and safety of the power supply system.

[0151] In some embodiments, when the current operating mode of the power supply system includes a charging mode or a discharging mode, step S106 includes at least one of the following steps S1071 to S1075:

[0152] Step S1071: When the current temperature of the GaN device is greater than a third temperature threshold, the current temperature of the GaN device is less than a fourth temperature threshold, the current water temperature of the water inlet is less than or equal to the maximum water temperature of the power supply system, and the current flow rate of the coolant at the water inlet is equal to the maximum flow rate of the coolant at the water inlet, taking the sixth fault detection result as the fault detection result of the power supply system; wherein the sixth fault detection result indicates that a fault has occurred in the power supply system and the fault type is the fifth fault type;

[0153] In some embodiments, in charging mode or discharging mode, when the temperature of the GaN device is between the third temperature threshold and the fourth temperature threshold, and the water temperature at the water inlet is less than or equal to the maximum water temperature, and the flow rate of the coolant is equal to the maximum flow rate, the power supply system determines that the fault detection result is the sixth fault detection result and reports a product overtemperature derating fault.

[0154] Step S1072: When the current temperature of the GaN device is greater than a third temperature threshold, the current temperature of the GaN device is less than the fourth temperature threshold, the current water temperature of the water inlet is greater than the maximum water temperature of the power supply system, and the current flow rate of the coolant at the water inlet is equal to the maximum flow rate of the coolant at the water inlet, taking the seventh fault detection result as the fault detection result of the power supply system; wherein the seventh fault detection result indicates that a fault has occurred in the power supply system and the fault type is the sixth fault type;

[0155] In some embodiments, in charging mode or discharging mode, when the temperature of the GaN device is between the third temperature threshold and the fourth temperature threshold, and the water temperature at the water inlet is higher than the maximum water temperature, and the flow rate of the coolant is equal to the maximum flow rate, the power supply system determines that the fault detection result is the seventh fault detection result and reports a water temperature overtemperature derating fault.

[0156] Step S1073: When the current temperature of the GaN device is not less than the fourth temperature threshold, the current water temperature of the water inlet is less than or equal to the maximum water temperature of the power supply system, and the current flow rate of the coolant at the water inlet is equal to the maximum flow rate of the coolant at the water inlet, taking the third fault detection result as the fault detection result of the power supply system;

[0157] In some embodiments, in charging mode or discharging mode, when the temperature of the GaN device is not less than the fourth temperature threshold, and the water temperature at the water inlet is less than or equal to the maximum water temperature, and the flow rate of the coolant is equal to the maximum flow rate, the power supply system determines that the fault detection result is the third fault detection result, and reports the product overtemperature shutdown fault.

[0158] Step S1074: When the current temperature of the GaN device is not less than the fourth temperature threshold, the current water temperature of the water inlet is less than or equal to the maximum water temperature of the power supply system, and the current flow rate of the coolant at the water inlet is less than the maximum flow rate of the coolant at the water inlet, taking the fourth fault detection result as the fault detection result of the power supply system;

[0159] In some embodiments, in charging mode or discharging mode, when the temperature of the GaN device is not less than the fourth temperature threshold, and the water temperature at the water inlet is less than or equal to the maximum water temperature, and the flow rate of the coolant is less than the maximum flow rate, the power supply system determines that the fault detection result is the fourth fault detection result and reports the abnormal shutdown fault of the water pump.

[0160] Step S1075: When the current temperature of the GaN device is not less than the fourth temperature threshold, the current water temperature of the water inlet is greater than the maximum water temperature of the power supply system, and the current flow rate of the coolant at the water inlet is equal to the maximum flow rate of the coolant at the water inlet, the fifth fault detection result is used as the fault detection result of the power supply system.

[0161] In some embodiments, in charging mode or discharging mode, when the temperature of the GaN device is not less than the fourth temperature threshold, and the water temperature at the water inlet is higher than the maximum water temperature, and the flow rate of the coolant is equal to the maximum flow rate, the power supply system determines that the fault detection result is the fifth fault detection result and reports a water temperature overtemperature shutdown fault.

[0162] In the embodiment of the present application, the power supply system fault detection result is determined based on the temperature of the GaN device, the water temperature at the water inlet, the coolant flow rate, and various thresholds in either charging or discharging mode. This allows the precise identification of the type of fault in the power supply system in either charging or discharging mode, and the implementation of appropriate treatment measures, thereby improving the reliability and safety of the power supply system in either charging or discharging mode, and thereby ensuring the stability and safety of the vehicle during driving.

[0163] In some embodiments, when the current operating mode of the power supply system includes a charging mode, the control method further includes the following steps S108 to S109:

[0164] Step S108: Determining a current cooling demand flow rate of the coolant at the water inlet of the power supply system based on the current state of the power supply system; wherein the current state of the power supply system also includes current operating parameters of the power supply system, and the current operating parameters of the power supply system include a current output voltage and a current water temperature at the water inlet;

[0165] Here, the cooling demand flow rate refers to the minimum coolant flow rate required to maintain the normal operation of the GaN device in the current operating mode.

[0166] The current operating parameters include the current output voltage and the current water temperature at the water inlet.

[0167] In some embodiments, the current output voltage is the voltage value output by the power supply system in charging mode, which reflects the load status and energy transmission efficiency of the power supply system. The current water temperature at the water inlet is the temperature of the coolant when it enters the power supply system, which directly affects the cooling effect and heat dissipation capacity. Therefore, the load status and energy transmission efficiency of the power supply system, as well as the cooling effect and heat dissipation capacity, can be comprehensively considered to determine the cooling demand flow currently required by the power supply system.

[0168] In some embodiments, the current cooling demand flow corresponding to the current output voltage and the current water temperature at the water inlet can be determined based on a predetermined correspondence between the output voltage of the power supply system, the water temperature at the water inlet, and the cooling demand flow.

[0169] In some embodiments, the correspondence between the output voltage of the power supply system, the temperature of the water inlet, and the flow rate of the coolant can be obtained through multiple experiments.

[0170] In some embodiments, the correspondence between the output voltage of the power supply system, the temperature of the water inlet, and the flow rate of the coolant can be obtained by the following calibration method: (1) Establishing the target charging efficiency ; (2) According to the product-defined water inlet coolant temperature range, increase the temperature from the lowest temperature to the highest temperature at a temperature step frequency; wherein, the water inlet coolant temperature range is pre-set, for example, it can be -45 degrees (°C) to 65 degrees; the temperature step frequency can be any temperature, for example, it can be 5 degrees, 8 degrees, etc.; (3) Under the conditions of different water inlet coolant temperatures, according to the full-load output voltage range of the power supply system, adjust the output voltage and increase it from the lowest full-load voltage to the highest full-load voltage at a voltage step frequency; wherein, the voltage step frequency can be any voltage, for example, it can be 5 volts (V), 10V, etc.; the full-load output voltage range is product-specific, for example, 320V to 480V; (4) During the test, obtain the real-time input voltage, input current, output voltage, and output current of the power supply system; (5) Refer to formula (1-2) to calculate the charging efficiency of the power supply system, and when the charging efficiency reaches the target charging efficiency, record the cooling flow value under the current conditions.

[0171] (1-2);

[0172] in, Indicates the real-time output voltage of the DC terminal of the power supply system. Indicates the real-time output current of the DC end of the power supply system. Indicates the real-time input voltage of the AC end of the power supply system. Indicates the real-time input current of the AC end of the power supply system.

[0173] Step S109: Requesting the current cooling demand flow from the vehicle's thermal management system to ensure that the power supply system is in a high charging efficiency state.

[0174] Here, the thermal management system is the system in the vehicle responsible for regulating and controlling the coolant flow. It adjusts the working status of the water pump or other cooling equipment by receiving cooling demand flow requests from the power supply system to meet the system's heat dissipation needs.

[0175] In some embodiments, the power supply system requests the current cooling demand flow from the thermal management system so that the power supply system can operate at a high charging efficiency state, thereby reducing over-temperature shutdown or efficiency degradation caused by insufficient cooling.

[0176] In an embodiment of the present application, by determining the cooling demand flow based on the current output voltage and the water temperature at the water inlet, and requesting the corresponding flow from the thermal management system, the coolant flow can be dynamically adjusted to adapt to the operating state of the power supply system, thereby ensuring that the power supply system operates in a high charging efficiency state, thereby improving the charging efficiency and reliability of the entire vehicle.

[0177] In some embodiments, the control method further includes the following steps S1010 to S1012:

[0178] Step S1010: Determining a current charging efficiency of the power supply system based on current operating parameters of the power supply system; wherein the current operating parameters further include a current input voltage of the power supply system, a current input current of the power supply system, and a current output current of the power supply system;

[0179] Here, the current operating parameters also include input voltage, input current, and output current.

[0180] The current charging efficiency of the power supply system is the ratio of the output power to the input power of the power supply system.

[0181] In some embodiments, the current charging efficiency of the power supply system can be calculated using the current operating parameters, as shown in Formula (1-2).

[0182] Step S1011: determining a target flow rate of the coolant at the water inlet based on the current charging efficiency of the power supply system and the current required cooling flow rate of the coolant at the water inlet;

[0183] Here, the target flow rate refers to the coolant flow rate value obtained based on the current charging efficiency of the power supply system and the current cooling flow rate required for the coolant at the water inlet. The target flow rate is the required flow rate of the coolant at the water inlet of the power supply system at the current charging efficiency.

[0184] In some implementations, the coolant flow rate corresponding to the current charging efficiency may be determined as the target flow rate.

[0185] In some implementations, the coolant flow rate corresponding to when the current charging efficiency meets the target charging efficiency may be determined as the target flow rate.

[0186] Step S1012: When the target flow rate is greater than the current cooling demand flow rate, request the target flow rate from the vehicle's thermal management system, and determine the next charging efficiency of the power supply system based on the next operating parameters of the power supply system.

[0187] In some embodiments, when the target flow rate is greater than the current cooling demand flow rate, the power supply system needs to request the target flow rate from the vehicle's thermal management system so that the power supply system obtains sufficient coolant flow rate.

[0188] In some embodiments, the next operating parameter refers to the operating parameter obtained after adjusting the water temperature at the water inlet or the output voltage of the power supply system, and the next charging efficiency is calculated based on the re-acquired operating parameter to obtain the target flow rate when the current charging efficiency reaches the target charging efficiency.

[0189] In this embodiment, the current charging efficiency is determined based on the current operating parameters of the power supply system, and the target flow rate is determined in combination with the current cooling demand flow rate of the coolant at the water inlet. If the target flow rate exceeds the current cooling demand flow rate, the thermal management system is requested to set the target flow rate, and the next charging efficiency is determined based on the next operating parameters. This allows for real-time adjustment of the coolant flow rate, ensuring that the power supply system receives sufficient coolant flow under different operating conditions, thereby preventing overheating and damage.

[0190] In some embodiments, the above step S1011 includes the following steps S10111 to S10112:

[0191] Step S10111: When the current charging efficiency of the power supply system is equal to the target charging efficiency, the current cooling demand flow rate is used as the target flow rate;

[0192] Here, the target charging efficiency is a preset expected efficiency value used to measure whether the power supply system is in an efficient working state.

[0193] In some embodiments, when the current charging efficiency equals the target charging efficiency, the power supply system is operating within its optimal efficiency range. At this point, the required cooling flow rate already meets the system's heat dissipation requirements, and no additional adjustment is required. Therefore, using the current required cooling flow rate as the target flow rate can avoid unnecessary cooling system adjustments, thereby saving energy and improving system stability.

[0194] Step S10112: When the current charging efficiency is not greater than the target charging efficiency, the target flow rate is determined based on the current cooling demand flow rate and the maximum flow rate of the coolant at the water inlet.

[0195] Here, the maximum flow rate of coolant is the maximum cooling capacity that the cooling system can provide, which is usually determined by the water pump performance and the coolant circulation system.

[0196] In some embodiments, when the current charging efficiency is not greater than the target charging efficiency, it indicates that the power supply system may be operating in an inefficient state. In this case, the target flow rate needs to be adjusted based on the current cooling demand flow rate and the maximum flow rate of the coolant.

[0197] In some embodiments, under the condition that the current cooling demand flow is not greater than the maximum flow of the coolant, the flow is increased based on the current cooling demand flow according to the flow adjustment step to obtain the target flow, wherein the flow adjustment step is an arbitrary step and this application does not limit it.

[0198] In the embodiment of the present application, the target flow rate is dynamically determined based on the current charging efficiency and the target charging efficiency. This improves the accuracy of the target flow rate, ensuring that the power supply system operates in the high-efficiency range, thereby maintaining a high charging efficiency. This in turn avoids the risk of GaN device overheating or tube explosion due to insufficient cooling, thereby improving the reliability and safety of the power supply system.

[0199] In some embodiments, the above step S10112 includes the following steps S1013 to S1014:

[0200] Step S1013: when the current cooling demand flow rate is equal to the maximum flow rate of the coolant at the water inlet, the maximum flow rate of the coolant at the water inlet is used as the target flow rate;

[0201] In some embodiments, when the current cooling demand flow rate is equal to the maximum flow rate of the coolant, it indicates that the power supply system is already at its maximum cooling capacity and the cooling flow rate cannot be further increased. Therefore, the maximum flow rate is used as the target flow rate to ensure that the power supply system can still maintain the temperature of the GaN device within a safe range under extreme operating conditions.

[0202] Step S1014: when the current cooling demand flow rate is less than the maximum flow rate of the coolant at the water inlet, the target flow rate is determined based on the current cooling demand flow rate and the flow rate adjustment step size.

[0203] Here, the flow adjustment step size refers to the incremental or decremental adjustment of the cooling flow rate. The setting of this step size needs to take into account factors such as the system's response speed, temperature stability, and energy consumption.

[0204] In some embodiments, when the current cooling demand flow rate is less than the maximum flow rate of the coolant at the water inlet, it means that the power supply system is not yet at the maximum cooling capacity. Therefore, the current cooling demand flow rate can be adjusted according to the flow adjustment step to obtain the target flow rate.

[0205] In this embodiment of the present application, the target flow rate is dynamically determined based on the current cooling demand flow rate and the maximum coolant flow rate at the water inlet. This allows the target flow rate to be gradually adjusted to meet the cooling needs of the power supply system, ensuring that the power supply system operates in a high-efficiency range and maintaining high charging efficiency, provided that the current cooling demand flow rate does not exceed the maximum coolant flow rate.

[0206] The following describes the application of the embodiments of the present application in actual scenarios.

[0207] As energy consumption indicators for new energy vehicles (NEVs) under the Worldwide Harmonized Light Vehicles Test Cycle (WLTC) are gradually increasing, OEMs are increasingly demanding cost-effectiveness and efficiency improvements in power supply systems. Low cost, high efficiency, light weight, and compact size have become key requirements for these systems. However, silicon metal-oxide-semiconductor (SiMOS) power solutions struggle to achieve the high charging efficiency and power density requirements due to switching frequency and inherent device losses. Furthermore, silicon carbide (SiC) MOS power solutions struggle to achieve low-cost designs due to their high device costs. This has led to GaNMOS becoming an effective solution.

[0208] As a third-generation semiconductor, GaN MOS has low turn-off losses. Combined with the power supply's soft-turn-on technology, it can significantly reduce the switching losses of the power supply system, thereby achieving higher charging efficiency and low-voltage power supply efficiency. At the same time, GaN MOS has a higher switching frequency, which can further reduce the device's size, thereby achieving higher power density and lower overall weight. In terms of cost, GaN MOS uses the same substrate as Si MOS, and its raw materials and manufacturing equipment can leverage Si MOS production capacity, making its manufacturing cost far lower than SiC MOS. Therefore, the application of GaN MOS in power supply systems can effectively meet the OEM's design requirements for "low cost, high efficiency, light weight, and small size."

[0209] However, GaN MOS also has significant shortcomings in its application in high-power power supplies. Issues with its "dynamic Rdson" and "Rdson attenuation over its lifetime" make it difficult to achieve high performance under all operating conditions. Under extreme conditions, there is also the risk of tube explosion. Therefore, how to solve the reliability issues of GaN MOS and how to ensure that the power supply system can continuously operate in the high-performance range have become common challenges facing the new energy vehicle industry.

[0210] A related technology, a GaN charger for electric vehicles, focuses on the hardware and structure of the GaN charger, but does not provide effective solutions to the problems faced by GaN MOS in high-power chargers for new energy vehicles, such as dynamic Rdson and Rdson attenuation.

[0211] A related technology for a high-power charging module for electric vehicles focuses on the power topology solution, drive control solution, and double-sided PCB layout solution for GaN MOS matching applications to improve product reliability. It does not provide effective solutions to the problems faced by GaN MOS in high-power chargers for new energy vehicles, such as dynamic Rdson and Rdson attenuation. It only describes the high-efficiency performance of the product itself, and does not elaborate on the impact of temperature on GaN power supply efficiency and provide solutions.

[0212] Based on the above description, the present application provides a control scheme for a high-reliability power supply system, focusing on the reliability and safety risks brought by "dynamic Rdson" and "Rdson attenuation during the life cycle" to the application of GaN power supplies in new energy vehicles, as well as the impact of temperature on the efficiency of GaN devices, and provides solutions from the vehicle end; and the present application provides a fault triggering and reporting strategy, by determining the root cause of the over-temperature failure of the GaN device, to achieve the improvement of the reliability of the power supply system in all scenarios from product control to fault identification, and avoid the risk of driving safety caused by abnormal breakdown of the vehicle during driving.

[0213] The present application provides a control scheme for a highly reliable power supply system. By calibrating the device temperature after GaN MOS attenuation, obtaining in real time the temperature of the GaN devices of the power supply system (primarily GaN MOS), the temperature of the coolant at the water inlet, the current operating mode, and the real-time input voltage, input current, output voltage, and output current in the current operating mode, combined with the power correction mapping relationship (i.e., power correction map) of devices with different aging levels, the operating state of the power supply system is controlled, thereby improving the reliability of the GaN MOS and ensuring that the power supply system can operate normally throughout its entire life cycle.

[0214] In the embodiment of the present application, the device temperature after aging of the GaN device is calibrated. The calibration method here is consistent with the attenuation degree of the GaN MOS and the maximum water temperature T of the water inlet coolant of the power supply system constrained by the host factory. max , Maximum flow rate of coolant at the water inlet Q max The design boundaries are related to the topology of the power supply system (the topology is related to the number of temperature sampling points). The maximum water temperature of the water inlet coolant can be any suitable temperature, such as 70°C, 75°C, or 80°C, and the maximum flow rate of the water inlet coolant can be any suitable flow rate, such as 7 liters / minute (L / min) or 8 L / min. The device temperature after attenuation of the GaN MOS should be matched and calibrated based on the operating conditions of the entire vehicle and a certain degree of strictness should be applied. The specific calibration conditions are as follows:

[0215] Charging mode: On-Board Charger + DC-to-DC Converter Mode (OBC+DCDC Mode), when the power supply system is fully charged (P max )、DCDC half load(1 / 2P max ), the highest water inlet temperature (T max ) and the maximum coolant flow (Q max ) under the conditions of testing;

[0216] Driving mode: Pure DC-to-DC Converter Mode (Pure DCDC Mode). When the DCDC of the power supply system is fully loaded (P max ), the highest water inlet temperature (T max ) and the maximum coolant flow (Q max ) under the conditions of testing;

[0217] Discharge mode: DC-to-AC Converter + DC-to-DC Converter Mode (DCAC+DCDC mode) in which the power supply system is fully discharged (P max )、DCDC half load(1 / 2P max ), the highest water inlet temperature (T max ) and the maximum coolant flow (Q max ) under the conditions of testing;

[0218] Under the test conditions corresponding to different operating modes, GaN devices with different aging degrees were tested to obtain the relationship between the aging degree of the power supply system devices and the device temperature of the GaN devices, which can be seen in Table 1.

[0219] Table 1 Relationship between the aging degree of power supply system components and the temperature of GaN devices

[0220]

[0221] In Table 1, the aging degree is expressed as the aging degree step frequency from the lowest aging degree X1% to the maximum aging degree X m %, determines the corresponding device temperature, wherein the aging degree step frequency can be any aging degree, for example, 5%, 10%, etc. The minimum aging degree X1% can be any appropriate aging degree, for example, 1%, 10%, 20%, etc. The maximum aging degree X m % can be any suitable degree of aging, for example, it can be 80%, 90%, 100%, etc.

[0222] The aging degree can be the value corresponding to the GaN device after DHTOL full life cycle thermal aging verification. This value is strongly related to the device specifications, process, design, etc., which will not be elaborated here. The device temperature obtained by using the aged device according to the above test conditions is the maximum temperature allowed for the GaN device to operate. If this temperature is exceeded, the GaN device is at risk of damage.

[0223] In implementation, according to Table 1, it can be determined that in OBC+DCDC mode, the maximum temperature at which the GaN device experiences the target aging degree is T 1rate In pure DCDC mode, the maximum temperature at which the GaN device experiences target aging is T 2rate In DCAC+DCDC mode, the maximum temperature at which the GaN device experiences target aging is T 3rate .

[0224] In an embodiment of the present application, a power correction map is formulated for GaN devices with different aging degrees, and the correction coefficients of the charging power and discharging power of the power supply system under different working conditions are calibrated according to the corresponding calibration method. The calibration method has been described in the aforementioned embodiment and will not be repeated here.

[0225] Through the above calibration, the mapping relationship between the aging degree of the GaN device and the derating factor of the output power (i.e., the power correction map of the power supply system) is obtained, see Table 2.

[0226] Table 2 Power correction mapping table of power supply system

[0227]

[0228] In Table 2, the aging degree is expressed as the aging degree step frequency from the lowest aging degree X1% to the maximum aging degree X m %, and determine the corresponding derating factor.

[0229] In the embodiment of the present application, based on the corresponding relationship between the aging degree of the GaN device and the temperature in Table 1, and the corresponding relationship between the aging degree of the GaN device and the derating factor of the output power in Table 2, a derating factor table at different temperatures is obtained, see Table 3.

[0230] Table 3 Derating coefficients at different device temperatures

[0231]

[0232] After obtaining the derating coefficient table shown in Table 3, when the current temperature of the GaN device is determined, the derating coefficient corresponding to the current temperature of the GaN device in this working mode (i.e., the aforementioned target derating coefficient) can be found by searching Table 3. Based on this derating coefficient, the target output power of the power supply system can be determined so that the power supply system can operate according to the target output power. For example, in the case of the working mode of OBC+DCDC mode, if the current temperature of the GaN device is greater than T 1(X1%) and not greater than T 1(X2%) , then the target derating factor is K 1(X2%) , according to K 1(X2%) As well as the maximum output power of the power supply system, the target output power is determined, and the power supply system works according to the target output power.

[0233] In an embodiment of the present application, the working state of the power supply system is controlled according to the device temperature under different working modes of the power supply system; the control strategy of the working state of the power supply system has been described in the previous embodiment and will not be repeated here.

[0234] The present application provides a fault triggering and reporting strategy, which reports the cause of the power supply system failure by obtaining the temperature of the GaN device of the power supply system, the temperature of the coolant at the water inlet, and the temperature of the calibrated GaN device after aging in real time, accurately identifying the fault triggering mechanism of the power supply system and improving the application reliability of the power supply system.

[0235] By obtaining the current temperature T of the GaN device of the power supply system and the current temperature T of the coolant at the water inlet in real time water The flow rate Q of the coolant at the water inlet and the maximum water temperature T of the coolant at the water inlet combined with the power supply system max (Maximum water temperature T max Including T in OBC+DCDC mode 1max , T in DCDC mode 2max And T in DCAC+DCDC mode 3max ) and the maximum flow rate Q of the coolant at the water inlet max (Maximum flow Q max Including Q in OBC+DCDC mode 1max , Q in DCDC mode 2max And Q in DCAC+DCDC mode 3max ), report the fault according to the following scheme:

[0236] For OBC+DCDC mode:

[0237] (1) When T>T 1rate &T<T 1（Xm%） 、T water ≤T 1max 、Q=Q 1max When the product is over-temperature and de-rated, it will report the fault;

[0238] (2) When T>T 1rate &T<T 1（Xm%） 、T water >T 1max 、Q=Q 1max When the water temperature is too high, a derating fault is reported;

[0239] (3) When T ≥ T 1（Xm%） 、T water ≤T 1max 、Q=Q 1max When the product is overheated, it will report the shutdown fault;

[0240] (4) When T ≥ T 1（Xm%） 、T water ≤T 1max 、Q<Q 1max When the water pump stops abnormally, it will report the fault;

[0241] (5) When T ≥ T 1（Xm%） 、T water >T 1max 、Q=Q 1max When the water temperature is too high, the shutdown fault is reported.

[0242] For DCDC mode:

[0243] (1) When T>T 2rate &T<T 2（Xm%） 、T water ≤T 2max 、Q=Q 2max When the system is running, it will continue to work without reporting any faults;

[0244] (2) When T>T 2rate &T<T 2（Xm%） 、T water >T 2max 、Q=Q 2max When the water temperature is too high, it will report a fault;

[0245] (3) When T ≥ T 2（Xm%） 、T water ≤T 2max 、Q=Q 2max When the product is overheated, it will report the shutdown fault;

[0246] (4) When T ≥ T 2（Xm%） 、T water ≤T 2max 、Q<Q 2max When the water pump stops abnormally, it will report the fault;

[0247] (5) When T ≥ T 2（Xm%） 、T water >T 2max 、Q=Q 2max When the water temperature is too high, the shutdown fault is reported.

[0248] For DCAC+DCDC mode:

[0249] (1) When T>T 3rate &T<T 3（Xm%） 、T water ≤T 3max 、Q=Q 3max When the product is over-temperature and de-rated, it will report the fault;

[0250] (2) When T>T 3rate &T<T 3（Xm%） 、T water >T 3max 、Q=Q 3max When the water temperature is too high, a derating fault is reported;

[0251] (3) When T ≥ T 3（Xm%） 、T water ≤T 3max 、Q=Q 3max When the product is overheated, it will report the shutdown fault;

[0252] (4) When T ≥ T 3（Xm%） 、T water ≤T 3max 、Q<Q 3max When the water pump stops abnormally, it will report the fault;

[0253] (5) When T ≥ T 3（Xm%） 、T water >T 3max , Q = Q 3max When the water temperature is too high, the shutdown fault is reported.

[0254] The present application provides a cooling control solution for a power supply system with high charging efficiency. By calibrating the mapping relationship between the output voltage, water inlet temperature and cooling flow of the power supply system (i.e., the high-efficiency flow map), combined with the current working mode and working parameters (input voltage, input current, output voltage, output current) of the power supply system obtained in real time, the cooling flow request of the power supply system is controlled, so that the power supply system can continue to operate in the high-efficiency zone.

[0255] In charging mode, different output voltages U out , the temperature of the coolant at different water inlets T water The high-efficiency flow map under the conditions of different output voltages and different water inlet coolant temperatures of the power supply system is calibrated to investigate the high-efficiency zone flow rate to obtain the cooling flow required for high charging efficiency under different working conditions. The calibration process has been described in the previous embodiment and will not be repeated here.

[0256] Through the above calibration process, the test data of the efficient flow mapping table of the power supply system (i.e., the efficient flow map of the power supply system) is obtained, see Table 4.

[0257] Table 4 High efficiency flow mapping table of power supply system

[0258]

[0259] In Table 4, the voltage is stepped from U min Increase to U max The water inlet temperature changes from T min Increase to T max, determine the corresponding flow rate, where the voltage step frequency can be any suitable voltage, for example, 5V, 10V, etc., a1 and a2 are determined according to the voltage step frequency, the water inlet temperature step frequency can be any suitable temperature, for example, 5 degrees, 10 degrees, etc., and b is determined according to the water inlet temperature step frequency.

[0260] After calibrating the high-efficiency flow map, the current operating mode and operating parameters (water inlet temperature, flow, input voltage, output voltage, input current, and output current) of the power supply system obtained in real time are combined to request the corresponding flow from the vehicle thermal management system by looking up Table 4. At the same time, considering the attenuation of the device Rdson, the power supply system should calculate whether the current charging efficiency of the power supply system meets the target charging efficiency based on the current operating state and operating parameters, combined with the errors in the sampling and reporting process of the reported output voltage and output current. If the current charging efficiency does not meet the target charging efficiency and the flow rate of the coolant at the water inlet does not reach the maximum flow rate of the coolant, the flow request should be increased according to the flow step frequency to meet the design requirements of high-efficiency charging. The flow step frequency can be any flow rate, for example, it can be 0.5L / min, 1L / min, etc.

[0261] Figure 2 A schematic diagram of the hardware structure of a power supply system and its connection with other hardware provided in an embodiment of the present application is shown as follows: Figure 2 As shown, the power supply system 1 includes a GaN MOS 2 and a thermocouple 3, among which the GaN MOS 2 has problems such as dynamic Rdson and Rdson attenuation. When the output power of the power supply system is different and the aging degree of the GaN device itself is different, the heat generated is different and the temperature of the GaN device is different.

[0262] The current sampling device 5 and the voltage sampling device 6 are arranged on the AC side (alternating current side) and the HV side (high voltage side) of the power supply system. They are mainly used to obtain the input voltage, input current, output voltage and output current of the power supply system, and in conjunction with the power analyzer 7, monitor the operating mode and output efficiency of the power supply system.

[0263] The thermocouple 3 is mainly arranged on the device surface of the GaN MOS 2 and is combined with the point temperature meter 4 to monitor the device temperature of the GaN MOS 2 .

[0264] The water transport thermostat 8 controls the water temperature and flow at the water inlet of the power supply system to meet the calibration requirements of the high-efficiency flow map.

[0265] Figure 3 A schematic diagram of the implementation process of a control method for a power supply system provided in an embodiment of the present application Figure 2,like Figure 3 As shown, the specific process may include the following steps S301 to S326:

[0266] Step S301: Is there a fault in the power supply system? If so, report the corresponding shutdown fault; if not, proceed to step S302;

[0267] Determine the fault status of the power supply system; such as CAN communication abnormality, low voltage power supply abnormality, power load abnormality, etc. If the power supply system has a fault, report the corresponding fault; if not, conduct subsequent determination;

[0268] Step S302: acquiring operating parameters, device temperature, and operating mode in real time;

[0269] The power supply system should obtain the input voltage and input current, output voltage and output current, water inlet coolant temperature and water inlet coolant flow in the current working mode in real time to make subsequent process judgments.

[0270] Step S303: Is it in pure DCDC mode? If so, go to step S316; if not, go to step S304;

[0271] For OBC+DCDC mode and DCAC+DCDC mode, when the GaN device temperature exceeds T rate In the DCDC mode, the power should be reduced, while in the current power output mode, the current power will be maintained.

[0272] Step S304: Is it in OBC+DCDC mode? If so, go to step S313; if not, go to step S305;

[0273] For the OBC+DCDC mode and DCAC+DCDC mode, the calibration temperatures of their GaN devices are different, and the corresponding derating temperature points (i.e., the maximum temperature corresponding to the target aging degree, such as aging starting at 65 degrees) and shutdown temperature points (i.e., the maximum temperature corresponding to maximum aging) are different.

[0274] Step S305: Is the device temperature T higher than T 3（Xm%） ; If yes, go to step S306; if no, go to step S311;

[0275] Step S306: Is the temperature of the coolant at the water inlet greater than T max ; If yes, go to step S307; if no, go to step S308;

[0276] Step S307: reporting a water temperature over-temperature shutdown fault;

[0277] Step S308: Is the flow rate of the coolant at the water inlet Q? max; If yes, go to step S309; ​​if no, go to step S310;

[0278] Determine the cooling flow of the power supply system. When the flow of the coolant at the water inlet has reached the maximum flow Q max When the power supply system is overheated, it should be caused by the product itself, and the process goes to step S309 to report the product overheating shutdown fault; when the flow rate of the coolant at the water inlet does not reach the maximum flow rate Q max At this time, the overheating of the power supply system should be caused by the water pump of the cooling system, and the process goes to step S310 to report the abnormal shutdown fault of the water pump.

[0279] Step S309: reporting a product over-temperature shutdown fault;

[0280] Step S310: reporting abnormal shutdown of the water pump;

[0281] Step S311: Is the device temperature T higher than T 3rate ; If yes, go to step S315; if no, go to step S312;

[0282] Following S305, the power supply system is in the DCAC+DCDC mode. If the temperature of the GaN device T<T 3rate When the power supply system has an over-temperature fault, the process proceeds to step S312. If the power supply system has an over-temperature fault, the fault is cleared. If not, the cycle ends. If the temperature of the power supply system device T>T 3rate , go to the next step S315.

[0283] Step S312: End / recover the fault;

[0284] Step S313: Is the device temperature T higher than T 1（Xm%） ; If yes, go to step S306; if no, go to step S314;

[0285] Step S314: Is the device temperature T higher than T 1rate ; If yes, go to step S315; if no, go to step S312;

[0286] In the OBC+DCDC mode, if the device temperature is less than the upper temperature limit T of the "aged GaN device" 1（Xm%） , while the device temperature <T 1rate When the device temperature is greater than T 1rate , go to the next step S315.

[0287] Step S315: derate the output power of OBC+DCDC / DCAC+DCDC, and proceed to step S318;

[0288] According to the derating factor table under different device temperatures, the output power of the power supply system is derated according to different device temperatures to reduce the device temperature of the GaN MOS.

[0289] Step S316: Is the device temperature higher than T 2（Xm%） ; If yes, go to step S306; if no, go to step S317;

[0290] Step S317: Is the device temperature higher than T 2rate ; If yes, go to step S318; if no, go to step S312;

[0291] Step S318: Is the flow rate of the coolant at the water inlet Q? max ; If yes, go to step S320; if no, go to step S319;

[0292] Step S319: Send a flow request Q to the vehicle thermal management system max ; and proceed to step S304;

[0293] Step S320: Is the temperature of the coolant at the water inlet greater than T max ; If yes, go to step S321; if no, go to step S322;

[0294] It is worth noting that the pure DCDC mode and the OBC+DCDC mode / DCAC+DCDC mode handle and report derating faults differently.

[0295] Step S321: Is it in DCDC mode? If yes, go to step S323; if no, go to step S324;

[0296] Step S322: Is it in DCDC mode? If so, go to step S326; if not, go to step S325;

[0297] Step S323: reporting a water overtemperature fault;

[0298] Step S324: reporting a water temperature over-temperature derating fault;

[0299] Step S325: reporting a product over-temperature derating fault;

[0300] Step S326: Maintain output.

[0301] Figure 4 A schematic diagram of the implementation process of a control method for a power supply system provided in an embodiment of the present application Figure 3 ,like Figure 4 As shown, the specific process may include the following steps S401 to S408:

[0302] Step S401: Developing an efficient flow map for the power supply system based on target efficiency;

[0303] Based on the product performance design requirements of the power supply system, combined with the different output voltages U out , different water inlet coolant temperature T water The high-efficiency zone flow under different working conditions is investigated to obtain the cooling flow required for high charging efficiency under different working conditions and develop an high-efficiency flow map.

[0304] Step S402: Acquire the operating parameters, device temperature, and operating mode of the power supply system in real time;

[0305] Real-time acquisition of the input voltage U of the power supply system in 、Input current I in , output voltage U out , output current I out , device temperature T and working mode. It is worth noting that the working mode here specifically refers to the OBC+DCDC mode.

[0306] Step S403: submitting a cooling flow request to the vehicle thermal management system by checking the efficient flow map;

[0307] By obtaining the working parameters and working mode of the power supply system in real time, combined with the efficient flow map, the cooling flow required by the power supply system under the current working conditions is obtained through table lookup, and the flow demand is released to the vehicle thermal management.

[0308] Step S404: Calculating the real-time charging efficiency of the power supply system based on the current and voltage sampling and reporting errors;

[0309] The power supply system is based on the real-time input voltage U in 、Input current I in , output voltage U out , output current I out , calculate the current charging efficiency, combine the signal sampling and reporting error, and enter step S405 to evaluate whether the current charging efficiency meets the design expectations.

[0310] Step S405: Is the charging efficiency greater than η? If so, proceed to step S406; if not, proceed to step S407;

[0311] When the real-time charging efficiency of the power supply system meets the design expectation, that is, the charging efficiency reaches the target charging efficiency, the process proceeds to step S406 to maintain the current working state. When the performance of the power supply system components degrades and the real-time charging efficiency does not meet the design expectation, the process proceeds to step S407.

[0312] Step S406: Maintain the current working state;

[0313] Step S407: Is the flow rate of the coolant at the water inlet Q? max ; If yes, go to step S406; if no, go to step S408;

[0314] Determine whether the water inlet flow of the power supply system is Q max If the condition is not satisfied, the process goes to step S408 to increase the cooling flow rate to improve the heat dissipation efficiency of the device. When the water inlet flow rate of the power supply system is Q max When , enter step S406 to maintain the current working state.

[0315] Step S408: The cooling flow rate request is increased by 0.5 L / min, and the process proceeds to step S404.

[0316] Based on the above embodiments, the present invention provides a control device for a power supply system. Figure 5 This is a schematic diagram of the structure of a control device for a power supply system proposed in an embodiment of the present application, as shown in FIG. Figure 5 As shown, the control device 500 of the power supply system includes: an acquisition module 501, used to obtain the current state of the power supply system; wherein the current state of the power supply system includes the current operating mode of the power supply system and the current temperature of the GaN device; a first determination module 502, used to determine the target operating state of the power supply system based on the current operating mode of the power supply system and the current temperature of the GaN device; wherein the target operating state of the power supply system includes one of the following: a first operating state, a second operating state, and a shutdown state, wherein the first operating state indicates that the power supply system operates according to the maximum output power, and the second operating state indicates that the power supply system operates according to the target output power, and the target output power is less than the maximum output power; a switching module 503, used to switch the operating state of the power supply system to the target operating state.

[0317] In some embodiments, when the current operating mode of the power supply system is the driving mode, the operating state of the power supply system includes one of the following: a first operating state and a shutdown state; the above-mentioned first determination module includes: a first determination unit, used to use the first operating state as the target operating state when the current temperature of the GaN device is greater than a first temperature threshold and the current temperature of the GaN device is less than a second temperature threshold; wherein the first temperature threshold is the maximum temperature at which the GaN device undergoes a target aging degree in the driving mode, and the second temperature threshold is the maximum temperature after maximum aging of the GaN device in the driving mode; a second determination unit, used to use the shutdown state as the target operating state when the current temperature of the GaN device is not less than the second temperature threshold.

[0318] In some embodiments, when the current operating mode of the power supply system is a charging mode or a discharging mode, the operating state of the power supply system includes one of the following: a second operating state and a shutdown state; the above-mentioned first determination module includes: a third determination unit, which is used to use the second operating state as the target operating state when the current temperature of the GaN device is greater than a third temperature threshold and the current temperature of the GaN device is less than a fourth temperature threshold; wherein the third temperature threshold is the maximum temperature at which the GaN device undergoes a target degree of aging in the target mode, and the fourth temperature threshold is the maximum temperature after maximum aging of the GaN device in the target mode, and the target mode includes the charging mode or the discharging mode; a fourth determination unit is used to use the shutdown state as the target operating state when the current temperature of the GaN device is not less than the fourth temperature threshold.

[0319] In some embodiments, the above-mentioned device also includes: a second determination module, used to determine the target derating factor in the target mode based on the current temperature of the GaN device; and a third determination module, used to determine the target output power of the power supply system based on the target derating factor in the target mode.

[0320] In some embodiments, the above-mentioned device also includes: a fourth determination module, which is used to determine the fault detection result of the power supply system based on the current state of the power supply system; wherein the current state of the power supply system also includes the current water temperature of the water inlet of the power supply system and the current flow rate of the coolant at the water inlet, and the fault detection result of the power supply system indicates whether the power supply system has a fault.

[0321] In some embodiments, when the current operating mode of the power supply system includes a driving mode, the fourth determination module includes at least one of the following: a fifth determination unit configured to use the first fault detection result as the fault detection result of the power supply system when the current temperature of the GaN device is greater than a first temperature threshold, the current temperature of the GaN device is less than a second temperature threshold, the current water temperature of the water inlet is less than or equal to the maximum water temperature of the power supply system, and the current flow rate of the coolant at the water inlet is equal to the maximum flow rate of the coolant at the water inlet; wherein the first fault detection result indicates that the power supply system has not failed; and a sixth determination unit configured to use the first fault detection result as the fault detection result of the power supply system when the current temperature of the GaN device is greater than a first temperature threshold, the current temperature of the GaN device is less than a second temperature threshold, the current water temperature of the water inlet is less than or equal to the maximum water temperature of the power supply system, and the current flow rate of the coolant at the water inlet is equal to the maximum flow rate of the coolant at the water inlet. A determining unit for, when the current temperature of the GaN device is greater than a first temperature threshold, the current temperature of the GaN device is less than a second temperature threshold, the current water temperature of the water inlet is greater than the maximum water temperature of the power supply system, and the current flow rate of the coolant at the water inlet is equal to the maximum flow rate of the coolant at the water inlet, using the second fault detection result as the fault detection result of the power supply system; wherein the second fault detection result indicates that the power supply system has a fault and the type of the fault is the first fault type; a seventh determining unit for, when the current temperature of the GaN device is not less than the second temperature threshold, the current water temperature of the water inlet is less than or equal to the maximum water temperature of the power supply system, The eighth determining unit is configured to determine the fault detection result of the power supply system when the current temperature of the GaN device is not less than the second temperature threshold, the current water temperature of the water inlet is less than or equal to the maximum water temperature of the power supply system, and the current flow rate of the coolant at the water inlet is less than the maximum flow rate of the coolant at the water inlet, and the fourth fault detection result is used as the fault detection result of the power supply system; wherein the third fault detection result indicates that the power supply system has a fault and the type of the fault is the second fault type; the eighth determining unit is configured to determine the fault detection result of the power supply system when the current temperature of the GaN device is not less than the second temperature threshold, the current water temperature of the water inlet is less than or equal to the maximum water temperature of the power supply system, and the current flow rate of the coolant at the water inlet is less than the maximum flow rate of the coolant at the water inlet. The result is used as the fault detection result of the power supply system; wherein, the fourth fault detection result indicates that the power supply system has a fault and the type of the fault is the third fault type; a ninth determination unit is used to use the fifth fault detection result as the fault detection result of the power supply system when the current temperature of the GaN device is not less than the second temperature threshold, the current water temperature of the water inlet is greater than the maximum water temperature of the power supply system, and the current flow rate of the coolant at the water inlet is equal to the maximum flow rate of the coolant at the water inlet; wherein, the fifth fault detection result indicates that the power supply system has a fault and the type of the fault is the fourth fault type.

[0322] In some embodiments, when the current operating mode of the power supply system includes a charging mode or a discharging mode, the fourth determination module includes at least one of the following: a tenth determination unit, configured to use the sixth fault detection result as the fault detection result of the power supply system when the current temperature of the GaN device is greater than a third temperature threshold, the current temperature of the GaN device is less than a fourth temperature threshold, the current water temperature of the water inlet is less than or equal to the maximum water temperature of the power supply system, and the current flow rate of the coolant at the water inlet is equal to the maximum flow rate of the coolant at the water inlet; wherein the sixth fault detection result indicates that the power supply system has a fault and the fault type is the fifth fault type; an eleventh determination unit, configured to use the seventh fault detection result as the fault detection result of the power supply system when the current temperature of the GaN device is greater than the third temperature threshold, the current temperature of the GaN device is less than the fourth temperature threshold, the current water temperature of the water inlet is greater than the maximum water temperature of the power supply system, and the current flow rate of the coolant at the water inlet is equal to the maximum flow rate of the coolant at the water inlet; wherein the seventh fault detection result indicates that the power supply system has a fault. The system fails and the fault type is the sixth fault type; the twelfth determining unit is used for the twelfth determining unit, which is used to use the third fault detection result as the fault detection result of the power supply system when the current temperature of the GaN device is not less than the fourth temperature threshold, the current water temperature of the water inlet is less than or equal to the maximum water temperature of the power supply system, and the current flow rate of the coolant at the water inlet is equal to the maximum flow rate of the coolant at the water inlet; the thirteenth determining unit is used to use the third fault detection result as the fault detection result of the power supply system when the current temperature of the GaN device is not less than the fourth temperature threshold, the current water temperature of the water inlet is less than or equal to the maximum water temperature of the power supply system, and the current flow rate of the coolant at the water inlet is less than the maximum flow rate of the coolant at the water inlet, taking the fourth fault detection result as the fault detection result of the power supply system; a fourteenth determination unit is used to take the fifth fault detection result as the fault detection result of the power supply system when the current temperature of the GaN device is not less than the fourth temperature threshold, the current water temperature of the water inlet is greater than the maximum water temperature of the power supply system, and the current flow rate of the coolant at the water inlet is equal to the maximum flow rate of the coolant at the water inlet.

[0323] In some embodiments, the above-mentioned device also includes: a fifth determination module, which is used to determine the current cooling demand flow rate of the coolant at the water inlet of the power supply system based on the current state of the power supply system; wherein the current state of the power supply system also includes the current operating parameters of the power supply system, and the current operating parameters of the power supply system include the current output voltage and the current water temperature of the water inlet; a sixth determination module, which is used to request the current cooling demand flow rate from the thermal management system of the vehicle to ensure that the power supply system is in a high charging efficiency state.

[0324] In some embodiments, the above-mentioned device also includes: a seventh determination module, used to determine the current charging efficiency of the power supply system based on the current operating parameters of the power supply system; wherein, the current operating parameters also include the current input voltage of the power supply system, the current input current of the power supply system and the current output current of the power supply system; an eighth determination module, used to determine the target flow rate of the coolant at the water inlet based on the current charging efficiency of the power supply system and the current cooling requirement flow rate of the coolant at the water inlet; a ninth determination module, used to request the target flow rate from the thermal management system of the vehicle when the target flow rate is greater than the current cooling requirement flow rate, and determine the next charging efficiency of the power supply system based on the next operating parameters of the power supply system.

[0325] In some embodiments, the above-mentioned eighth determination module includes: a fifteenth determination unit, which is used to use the current cooling demand flow as the target flow when the current charging efficiency of the power supply system is equal to the target charging efficiency; a sixteenth determination unit, which is used to determine the target flow based on the current cooling demand flow and the maximum flow of the coolant at the water inlet when the current charging efficiency is not greater than the target charging efficiency.

[0326] In some embodiments, the fifteenth determination unit includes: a first determination subunit, used to take the maximum flow rate of the coolant at the water inlet as the target flow rate when the current cooling demand flow rate is equal to the maximum flow rate of the coolant at the water inlet; a second determination subunit, used to determine the target flow rate based on the current cooling demand flow rate and the flow adjustment step when the current cooling demand flow rate is less than the maximum flow rate of the coolant at the water inlet.

[0327] An embodiment of the present application provides a computer device including a memory and a processor, wherein the memory stores a computer program that can be run on the processor, and when the processor executes the program, some or all of the steps in the above method are implemented.

[0328] An embodiment of the present application also provides a vehicle, comprising the above-mentioned computer device.

[0329] The present application also provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a vehicle control device, implements some or all of the steps in the above method. The computer-readable storage medium may be transient or non-transient.

[0330] An embodiment of the present application also proposes a computer program, including a computer-readable code. When the computer-readable code runs in an electronic device, a control device in a vehicle executes some or all of the steps for implementing the above method.

[0331] The present application also provides a computer program product comprising a computer program or instructions. When executed by a vehicle control device, the computer program or instructions implement some or all of the steps in the above-described method. The computer program product may be implemented through hardware, software, or a combination thereof. In some embodiments, the computer program product is embodied as a computer storage medium. In other embodiments, the computer program product is embodied as a software product, such as a software development kit (SDK).

[0332] It should be noted that the embodiment of the present application provides a hardware entity of a computer device, such as Figure 6 As shown, the hardware components of computer device 600 include a processor 601, which generally controls the overall operation of computer device 600. A communication interface 602 enables the computer device to communicate with other terminals or servers via a network. A memory 603 is configured to store instructions and applications executable by processor 601 and to cache data (e.g., image data, audio data, voice communication data, and video communication data) to be processed or already processed by processor 601 and various modules within computer device 600. This can be implemented using flash memory (FLASH) or random access memory (RAM). Data can be transmitted between processor 601, communication interface 602, and memory 603 via bus 604.

[0333] The above embodiments are only preferred embodiments for fully illustrating the present application, and the protection scope of the present application is not limited thereto. Any equivalent substitutions or modifications made by those skilled in the art based on the present application are within the protection scope of the present application.

Claims

1. A control method for a power supply system, characterized in that: Applied in a vehicle, the power supply system includes a gallium nitride (GaN) device, including: Acquiring a current state of the power supply system; wherein the current state of the power supply system includes a current operating mode of the power supply system and a current temperature of the GaN device; Determining a target operating state of the power supply system based on a current operating mode of the power supply system and a current temperature of the GaN device; wherein the target operating state of the power supply system includes one of the following: a first operating state, a second operating state, and a shutdown state, wherein the first operating state indicates that the power supply system operates at a maximum output power, and the second operating state indicates that the power supply system operates at a target output power, wherein the target output power is less than the maximum output power; The operating state of the power supply system is switched to the target operating state.

2. The method according to claim 1, characterized in that In the case where the current working mode of the power supply system is the driving mode, the working state of the power supply system includes one of the following: a first working state, a shutdown state; The determining a target operating state of the power supply system based on a current operating mode of the power supply system and a current temperature of the GaN device includes: When the current temperature of the GaN device is greater than a first temperature threshold and the current temperature of the GaN device is less than a second temperature threshold, the first operating state is used as the target operating state; wherein the first temperature threshold is the maximum temperature at which the GaN device undergoes a target aging degree in the driving mode, and the second temperature threshold is the maximum temperature after maximum aging of the GaN device in the driving mode; When the current temperature of the GaN device is not less than the second temperature threshold, the shutdown state is used as the target operating state.

3. The method according to claim 1, characterized in that In the case where the current working mode of the power supply system is the charging mode or the discharging mode, the working state of the power supply system includes one of the following: a second working state, a shutdown state; The determining a target operating state of the power supply system based on a current operating mode of the power supply system and a current temperature of the GaN device includes: When the current temperature of the GaN device is greater than a third temperature threshold and the current temperature of the GaN device is less than a fourth temperature threshold, the second operating state is used as the target operating state; wherein the third temperature threshold is the maximum temperature at which the GaN device experiences a target degree of aging in the target mode, and the fourth temperature threshold is the maximum temperature after maximum aging of the GaN device in the target mode, and the target mode includes the charging mode or the discharging mode; When the current temperature of the GaN device is not less than the fourth temperature threshold, the shutdown state is used as the target operating state.

4. The method according to claim 3, characterized in that The control method further includes: determining a target derating factor in the target mode based on a current temperature of the GaN device; The target output power of the power supply system is determined based on the target derating factor in the target mode.

5. The method according to claim 1, wherein The control method further includes: Based on the current state of the power supply system, a fault detection result of the power supply system is determined; wherein the current state of the power supply system also includes the current water temperature of the water inlet of the power supply system and the current flow rate of the coolant at the water inlet, and the fault detection result of the power supply system indicates whether the power supply system has a fault.

6. The method according to claim 5, characterized in that When the current operating mode of the power supply system includes the driving mode, determining the fault detection result of the power supply system based on the current state of the power supply system includes at least one of the following: When the current temperature of the GaN device is greater than a first temperature threshold, the current temperature of the GaN device is less than a second temperature threshold, the current water temperature of the water inlet is less than or equal to the maximum water temperature of the power supply system, and the current flow rate of the coolant at the water inlet is equal to the maximum flow rate of the coolant at the water inlet, taking the first fault detection result as the fault detection result of the power supply system; wherein the first fault detection result indicates that the power supply system has not failed; When the current temperature of the GaN device is greater than a first temperature threshold, the current temperature of the GaN device is less than a second temperature threshold, the current water temperature of the water inlet is greater than a maximum water temperature of the power supply system, and the current flow rate of the coolant at the water inlet is equal to the maximum flow rate of the coolant at the water inlet, taking the second fault detection result as the fault detection result of the power supply system; wherein the second fault detection result indicates that a fault has occurred in the power supply system and the type of the fault is the first fault type; When the current temperature of the GaN device is not less than the second temperature threshold, the current water temperature of the water inlet is less than or equal to the maximum water temperature of the power supply system, and the current flow rate of the coolant at the water inlet is equal to the maximum flow rate of the coolant at the water inlet, taking the third fault detection result as the fault detection result of the power supply system; wherein the third fault detection result indicates that a fault has occurred in the power supply system and the type of the fault is the second fault type; When the current temperature of the GaN device is not less than the second temperature threshold, the current water temperature of the water inlet is less than or equal to the maximum water temperature of the power supply system, and the current flow rate of the coolant at the water inlet is less than the maximum flow rate of the coolant at the water inlet, taking the fourth fault detection result as the fault detection result of the power supply system; wherein the fourth fault detection result indicates that a fault has occurred in the power supply system and the type of the fault is the third fault type; When the current temperature of the GaN device is not less than the second temperature threshold, the current water temperature of the water inlet is greater than the maximum water temperature of the power supply system, and the current flow rate of the coolant at the water inlet is equal to the maximum flow rate of the coolant at the water inlet, the fifth fault detection result is used as the fault detection result of the power supply system; wherein, the fifth fault detection result indicates that a fault has occurred in the power supply system and the type of the fault is the fourth fault type.

7. The method according to claim 5, characterized in that In a case where the current operating mode of the power supply system includes a charging mode or a discharging mode, determining the fault detection result of the power supply system based on the current state of the power supply system includes at least one of the following: When the current temperature of the GaN device is greater than a third temperature threshold, the current temperature of the GaN device is less than a fourth temperature threshold, the current water temperature of the water inlet is less than or equal to the maximum water temperature of the power supply system, and the current flow rate of the coolant at the water inlet is equal to the maximum flow rate of the coolant at the water inlet, taking the sixth fault detection result as the fault detection result of the power supply system; wherein the sixth fault detection result indicates that a fault has occurred in the power supply system and the fault type is the fifth fault type; When the current temperature of the GaN device is greater than the third temperature threshold, the current temperature of the GaN device is less than the fourth temperature threshold, the current water temperature of the water inlet is greater than the maximum water temperature of the power supply system, and the current flow rate of the coolant at the water inlet is equal to the maximum flow rate of the coolant at the water inlet, taking the seventh fault detection result as the fault detection result of the power supply system; wherein the seventh fault detection result indicates that a fault has occurred in the power supply system and the fault type is the sixth fault type; When the current temperature of the GaN device is not less than the fourth temperature threshold, the current water temperature of the water inlet is less than or equal to the maximum water temperature of the power supply system, and the current flow rate of the coolant at the water inlet is equal to the maximum flow rate of the coolant at the water inlet, taking the third fault detection result as the fault detection result of the power supply system; When the current temperature of the GaN device is not less than the fourth temperature threshold, the current water temperature of the water inlet is less than or equal to the maximum water temperature of the power supply system, and the current flow rate of the coolant at the water inlet is less than the maximum flow rate of the coolant at the water inlet, taking the fourth fault detection result as the fault detection result of the power supply system; When the current temperature of the GaN device is not less than the fourth temperature threshold, the current water temperature of the water inlet is greater than the maximum water temperature of the power supply system, and the current flow rate of the coolant at the water inlet is equal to the maximum flow rate of the coolant at the water inlet, the fifth fault detection result is used as the fault detection result of the power supply system.

8. The method according to any one of claims 1 to 7, characterized in that In a case where the current operating mode of the power supply system includes a charging mode, the control method further includes: Determining a current cooling demand flow rate of the coolant at the water inlet of the power supply system based on the current state of the power supply system; wherein the current state of the power supply system also includes current operating parameters of the power supply system, and the current operating parameters of the power supply system include a current output voltage and a current water temperature at the water inlet; The current cooling demand flow is requested from the thermal management system of the vehicle to ensure that the power supply system is in a high charging efficiency state.

9. The method according to claim 8, characterized in that The control method further includes: determining a current charging efficiency of the power supply system based on current operating parameters of the power supply system, wherein the current operating parameters further include a current input voltage of the power supply system, a current input current of the power supply system, and a current output current of the power supply system; determining a target flow rate of the coolant at the water inlet based on a current charging efficiency of the power supply system and a current cooling demand flow rate of the coolant at the water inlet; When the target flow rate is greater than the current cooling demand flow rate, the target flow rate is requested from the vehicle thermal management system, and a next charging efficiency of the power supply system is determined based on a next operating parameter of the power supply system.

10. The method according to claim 9, characterized in that The determining of a target flow rate of the coolant at the water inlet based on a current charging efficiency of the power supply system and a current cooling demand flow rate of the coolant at the water inlet includes: When the current charging efficiency of the power supply system is equal to the target charging efficiency, the current cooling demand flow rate is used as the target flow rate; When the current charging efficiency is not greater than the target charging efficiency, the target flow rate is determined based on the current cooling demand flow rate and the maximum flow rate of the coolant at the water inlet.

11. The method according to claim 10, characterized in that The determining the target flow rate based on the current cooling demand flow rate and the maximum flow rate of the coolant at the water inlet includes: When the current cooling demand flow rate is equal to the maximum flow rate of the coolant at the water inlet, the maximum flow rate of the coolant at the water inlet is used as the target flow rate; When the current cooling demand flow rate is less than the maximum flow rate of the coolant at the water inlet, the target flow rate is determined based on the current cooling demand flow rate and a flow rate adjustment step.

12. A control device for a power supply system, characterized in that: include: An acquisition module, configured to acquire a current state of the power supply system; wherein the current state of the power supply system includes a current operating mode of the power supply system and a current temperature of the GaN device; a first determining module, configured to determine a target operating state of the power supply system based on a current operating mode of the power supply system and a current temperature of the GaN device; wherein the target operating state of the power supply system includes one of the following: a first operating state, a second operating state, and a shutdown state, wherein the first operating state indicates that the power supply system operates at a maximum output power, and the second operating state indicates that the power supply system operates at a target output power, wherein the target output power is less than the maximum output power; The switching module is used to switch the working state of the power supply system to the target working state.

13. A computer device comprising a memory and a processor, wherein the memory stores a computer program that can be run on the processor, wherein: When the processor executes the program, the steps of the method according to any one of claims 1 to 11 are implemented.

14. A vehicle, characterized in that: Comprising the computer device of claim 13.

15. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 11 are implemented.

16. A computer program product comprising a computer program or instructions, characterized in that When the computer program or instruction is executed by a processor, the steps of the method according to any one of claims 1 to 11 are implemented.

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