Method for cleaning cavity of etching machine table

Abstract

An etching machine table cavity cleaning method comprises the steps that an etching machine table is provided, the etching machine table comprises an etching machine body and a cavity for containing the etching machine body, and etching by-product particles are attached to the inner wall of the cavity; cleaning treatment is carried out on the cavity, the cleaning treatment comprises a plurality of times of circular treatment until etching by-product particles on the inner wall are completely removed, and the single-time circular treatment comprises the following steps: a first stage, introducing cleaning gas into the cavity, converting the cleaning gas into second plasma through the etching machine main body, adsorbing the second plasma to the surface of the inner wall, and removing the etching by-product particles on the inner wall; a chemical reaction is generated between the etching byproduct particles and the etching byproduct particles to form a gaseous chemical product; and after the first stage is completed, a second stage is carried out, protective gas is introduced into the cavity, vacuumizing operation is carried out at the same time, so that the cavity is subjected to purging treatment, unreacted cleaning gas and chemical products are discharged outwards from the cavity, and the cleaning efficiency is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to a method for cleaning an etching machine cavity. Background Art

[0002] Aluminum is a common material used in modern electronic components and is widely used in the manufacture of integrated circuits and circuit boards. Aluminum etching is a crucial process step, its primary purpose being to remove the aluminum layer in predetermined areas to form the desired circuit pattern. However, byproducts produced during the etching process can adhere to the inner surface of the etching chamber. This accumulation can affect subsequent etching uniformity, resulting in poor circuit pattern formation. It can also increase equipment wear, shortening service life and increasing maintenance costs.

[0003] Therefore, an effective method for cleaning the cavity of an etching machine is urgently needed. Summary of the Invention

[0004] The technical problem solved by the present invention is to provide a method for cleaning an etching machine cavity to improve the cleaning efficiency.

[0005] To solve the above technical problems, the present invention provides a method for cleaning an etching tool chamber, comprising: providing an etching tool, the etching tool comprising an etcher body and a chamber accommodating the etcher body, the etcher body being configured to convert etching gas in the chamber into a first plasma and drive the first plasma to etch a wafer, wherein etching byproduct particles are attached to an inner wall of the chamber; performing a cleaning process on the chamber, wherein the cleaning process comprises several cycles until the etching byproduct particles on the inner wall are completely removed, wherein a single cycle comprises: a first stage, introducing a cleaning gas into the chamber, converting the cleaning gas into a second plasma through the etcher body, the second plasma being adsorbed onto the inner wall surface and chemically reacting with the etching byproduct particles to form gaseous chemical products; and a second stage, after the first stage is completed, introducing a protective gas into the chamber and simultaneously performing a vacuum operation to purge the chamber, thereby discharging unreacted cleaning gas and the chemical products from the chamber.

[0006] Optionally, the cavity has several gas inlets and at least one gas outlet; in the first stage, the cleaning gas is introduced into the cavity from the several gas inlets respectively; in the second stage, the unreacted cleaning gas and the chemical products are discharged from the gas outlet.

[0007] Optionally, the plurality of air inlets and the air outlets are located at opposite ends of the cavity.

[0008] Optionally, flow meters are respectively provided at a plurality of positions in the cavity; while introducing the cleaning gas into the cavity, it also includes: using the flow meter to obtain the gas flow at each position; and adjusting the flow of the cleaning gas entering from each of the gas inlets according to the gas flow at each position.

[0009] Optionally, an element measuring device is set in the cavity; the first stage also includes: using the element measuring device to obtain the gas composition in the cavity; based on the gas composition, determining whether the etching by-product particles on the inner wall have been completely removed, if they have been completely removed, ending the cleaning process, otherwise continuing the cleaning process.

[0010] Optionally, the element measurement equipment includes an atomic emission spectrometer.

[0011] Optionally, a temperature measuring device is provided in the cavity; the first stage further includes: using the temperature measuring device to obtain the temperature measurement value of the inner wall in real time; controlling the temperature of the inner wall according to the temperature measurement value to control the chemical reaction.

[0012] Optionally, the method for controlling the temperature of the inner wall includes: heating the inner wall by a heater; the heater includes a resistance wire, and the resistance wire is embedded in the cavity wall of the cavity.

[0013] Optionally, a cooling water pipe is provided on the outer wall of the cavity; and the method of controlling the temperature of the inner wall includes: cooling the inner wall through the cooling water pipe.

[0014] Optionally, the temperature measuring device includes a thermocouple.

[0015] Optionally, a pressure sensor is provided in the cavity; the first stage further includes: using the pressure sensor to obtain a pressure measurement value in the cavity in real time; and adjusting the flow rate of the cleaning gas according to the pressure measurement value so that the pressure in the cavity reaches a preset range.

[0016] Optionally, the cleaning gas includes one or more of nitrogen fluoride, chlorine, ammonia, hydrogen, and water vapor.

[0017] Optionally, the cleaning gas in each of the cyclic processes is a single gas, and the cleaning gases introduced in two adjacent cyclic processes are different.

[0018] Optionally, the protective gas includes nitrogen or an inert gas.

[0019] Optionally, the number of cycles ranges from 2 to 10 times.

[0020] Optionally, the etching by-product particles are also attached to the surface of the etcher main body, and the cleaning process is also used to remove the etching by-product particles on the surface of the etcher main body.

[0021] Compared with the existing technology, the technical solution of the embodiment of the present invention has the following beneficial effects:

[0022] In the etching machine cavity cleaning method provided by the technical solution of the present invention, several cycles are performed. In each cycle, in the first stage, a second plasma formed by a cleaning gas and etching by-product particles undergo a chemical reaction to form gaseous chemical products. In the second stage, the unreacted cleaning gas and the chemical products are discharged from the cavity to the outside, thereby realizing automatic cleaning of the etching by-product particles attached to the inner wall of the cavity, which is beneficial to improving the cleaning efficiency. In addition, compared with manual cleaning, the cleaning process is more thorough and avoids the health hazards caused to the workers by the by-product particles during manual cleaning.

[0023] Furthermore, the cleaning gas used in each of the cyclic processes is a single gas, and the cleaning gases used in two adjacent cyclic processes are different. Using a single cleaning gas in each of the cyclic processes can make the chemical reaction in the first stage more simple, better control the reaction conditions, and improve the efficiency of removing the etching byproduct particles. Furthermore, using different cleaning gases in two adjacent cyclic processes can remove a certain component of the etching byproduct particles in the first process, and after exposing the second component, mainly clean the second component, further improving the efficiency of removing the etching byproduct particles. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 This is a flow chart of a method for cleaning an etching tool chamber according to an embodiment of the present invention;

[0025] Figure 2 and Figure 3 It is a structural schematic diagram of an etching machine chamber according to an embodiment of the present invention. DETAILED DESCRIPTION

[0026] As described in the background art, the existing etching machine cavity cleaning method is in urgent need of improvement. Specifically, the dry etching of aluminum requires the use of some specific gases, commonly used are fluoride, chloride, bromide, etc. Among them, fluoride is the most commonly used gas because of its high reactivity, which can achieve a faster etching speed. However, by-products produced during the etching process, such as aluminum fluoride (AlF3), may accumulate inside the cavity (such as the inner wall), affecting the process stability and accelerating the aging of the equipment. For this reason, in the prior art, the cavity is usually cleaned by manually opening the cavity and wiping it.

[0027] However, as time goes by, the residue on the inner wall of the cavity will become stubborn and difficult to clean. In addition, the wiping cleaning process will have a certain degree of adverse effects on human health, and the cleaning coverage area is not comprehensive enough.

[0028] In order to solve the above problems, the present invention provides a method for cleaning the cavity of an etching machine, which is carried out through several cycles. In each cycle, in the first stage, a second plasma formed by a cleaning gas and etching by-product particles undergo a chemical reaction to form gaseous chemical products. In the second stage, the unreacted cleaning gas and the chemical products are discharged from the cavity, thereby realizing automatic cleaning of the etching by-product particles attached to the inner wall of the cavity, which is beneficial to improving the cleaning efficiency. In addition, compared with manual cleaning, the cleaning process is more thorough and avoids the health hazards caused to the workers by the by-product particles during manual cleaning.

[0029] In order to make the above-mentioned objects, features and beneficial effects of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0030] Figure 1 The figure is a flow chart of a method for cleaning an etching tool chamber according to an embodiment of the present invention.

[0031] In this embodiment, the etching machine cavity cleaning method includes the following steps:

[0032] Step S101, providing an etching machine, wherein the etching machine includes an etcher body and a chamber accommodating the etcher body, wherein the etcher body is configured to convert etching gas in the chamber into a first plasma and drive the first plasma to etch a wafer, wherein particles of etching byproducts are attached to an inner wall of the chamber;

[0033] Subsequently, the chamber is cleaned, and the cleaning process includes several cycles until the etching byproduct particles on the inner wall are completely removed. Each cycle includes:

[0034] Step S102, in the first stage, a cleaning gas is introduced into the chamber, and the cleaning gas is converted into a second plasma by the etcher body. The second plasma is adsorbed onto the inner wall surface and chemically reacts with the etching byproduct particles to form gaseous chemical products.

[0035] Step S103, after the first stage is completed, the second stage is carried out, in which a protective gas is introduced into the cavity and a vacuum operation is performed simultaneously to purge the cavity so that the unreacted cleaning gas and the chemical products are discharged from the cavity.

[0036] In step S104, when it is determined that the etching byproduct particles on the inner wall are completely removed, the process proceeds to step S105 to terminate the cleaning process; otherwise, steps S102 and S103 are repeated until the etching byproduct particles on the inner wall are completely removed.

[0037] At this point, through several cycles of treatment, in each of the cycles, in the first stage, the second plasma formed by the cleaning gas and the etching by-product particles 202 undergo a chemical reaction to form gaseous chemical products, and in the second stage, the unreacted cleaning gas and the chemical products are discharged from the cavity to the outside, and the etching by-product particles 202 attached to the inner wall of the cavity 201 are automatically cleaned, which is beneficial to improving the cleaning efficiency; in addition, compared with manual cleaning, the cleaning process is more thorough and avoids the health hazards caused to the workers by the by-product particles during manual cleaning.

[0038] The following is a detailed description with reference to the accompanying drawings.

[0039] Figure 2 and Figure 3 It is a structural schematic diagram of an etching machine chamber according to an embodiment of the present invention.

[0040] Please refer to Figure 2 and Figure 3 , and continue to refer to Figure 1 , Figure 2 is a structural diagram, Figure 3 for Figure 2 A top view of the middle cavity, executing step S101, providing an etching machine 20, the etching machine 20 includes an etcher body and a cavity 201 accommodating the etcher body, the etcher body is used to convert the etching gas in the cavity 201 into a first plasma, and drive the first plasma to etch the wafer, and the inner wall of the cavity 201 is attached with etching by-product particles 202.

[0041] The etching byproduct particles 202 are generated after etching the wafer, and their materials depend on the etching gas and the etched material layer. In this embodiment, the etching byproduct particles 202 mainly include aluminum fluoride (such as AlF3) and aluminum chloride (such as AlCl3).

[0042] It should be noted that the inner wall mentioned herein refers to the surface of the cavity wall of the cavity 201 facing the etcher body, and the outer wall mentioned later herein refers to the other surface of the cavity wall of the cavity 201 opposite to the inner wall.

[0043] In this embodiment, the etching by-product particles 202 are still attached to the surface of the etcher main body, and the subsequent cleaning process is also used to remove the etching by-product particles 202 on the surface of the etcher main body.

[0044] In this embodiment, the etcher body includes an upper electrode 203 and a lower electrode 204. In addition to being an electrode, the lower electrode 204 is also used as a support platform for the wafer to be etched.

[0045] In this embodiment, the etching machine 20 further includes an RF radio frequency unit 205 . The RF radio frequency unit 205 is placed outside the chamber 201 and is used to provide power to the etching machine body.

[0046] In this embodiment, the gas inlets 206 and the gas outlets 207 are located at opposite ends of the cavity 201 , which facilitates uniform distribution of the subsequently introduced cleaning gas in the cavity 201 (especially around the inner wall).

[0047] In this embodiment, the cavity wall of the cavity 201 includes a top wall (not shown in the figure), a bottom wall (not shown in the figure) and a side wall (not shown in the figure) located between the top wall and the bottom wall, and the lower electrode 204 is placed on the bottom wall.

[0048] Specifically, the plurality of air inlets 206 are disposed on the top wall of the cavity 201 , and the air outlets 207 are disposed on the bottom wall of the cavity 201 .

[0049] In this embodiment, the cavity 201 is provided with a plurality of air inlets 206 , which are evenly arranged along the periphery of the top wall of the cavity 201 , so as to facilitate uniform distribution of the cleaning gas subsequently introduced around the inner wall.

[0050] It should be noted here that Figure 3 Only four air inlets 206 are shown in the figure, and the number of the air inlets 206 can be adjusted according to actual needs.

[0051] In this embodiment, the distance d between the gas inlet 206 and the side wall of the chamber 201 is in the range of 15 cm to 30 cm. The purpose of limiting the above range is to generate a uniform airflow around the inner wall, which helps to evenly distribute the cleaning gas introduced subsequently around the inner wall.

[0052] In this embodiment, a heater 208 (not shown in the figure) is provided in the cavity wall of the cavity 201 .

[0053] The heater 208 includes a resistance wire embedded in the cavity wall of the cavity 201 .

[0054] In this embodiment, the heater 208 is a resistance wire, the cavity wall of the cavity 201 is a hollow shell, and the resistance wire is located inside the shell.

[0055] In this embodiment, a cooling water pipe is provided on the outer wall of the cavity 201 .

[0056] In this embodiment, an element measurement device (not shown in the figure) is disposed in the cavity 201 .

[0057] The element measurement device includes an atomic emission spectrometer. In this embodiment, the element measurement device is an atomic emission spectrometer.

[0058] In this embodiment, a temperature measuring device (not shown in the figure) is provided in the cavity 201 .

[0059] The temperature measuring device includes a thermocouple. In this embodiment, the temperature measuring device is a thermocouple.

[0060] In this embodiment, flow meters (not shown in the figure) are further provided at multiple locations within the cavity 201 .

[0061] In this embodiment, a pressure sensor (not shown in the figure) is further provided in the cavity 201 .

[0062] It should be noted here that Figure 2 The dotted line in the middle indicates the location of the wafer to be etched. After etching the wafer and removing it from the chamber 201, the chamber is cleaned. Specifically, in actual production, the cleaning process of the chamber 201 can be performed regularly or irregularly. The steps of a single cycle are described in detail below.

[0063] Continue to refer Figure 1 and Figure 2 , execute step S102, in the first stage, a cleaning gas is introduced into the chamber 201, and the cleaning gas is converted into a second plasma through the etcher body. The second plasma is adsorbed to the inner wall surface and chemically reacts with the etching by-product particles to form gaseous chemical products.

[0064] The cleaning gas includes one or more of nitrogen fluoride, chlorine, ammonia, hydrogen, and water vapor. Here, the cleaning gas can be selected based on the possible components of the etching byproduct particles 202.

[0065] In this embodiment, chlorine (Cl2) is used as the cleaning gas in the first stage of the first cycle. The etcher body converts the Cl2 into Cl2 plasma. The free radical component (Cl•) in the plasma is adsorbed onto the inner wall surface and then chemically reacts with the solid aluminum chloride (AlCl3) in the etching byproduct particles 202, thereby forming a gaseous chemical product AlCl4 free radical that is easily discharged. The chemical reaction is as follows:

[0066] AlCl3 (solid) + Cl• (free radicals in plasma) → AlCl4• (gas).

[0067] In this embodiment, in the first cycle, the process time of the first stage ranges from 30s to 90s. Here, since the AlCl4 radical is a short-lived coordination intermediate, in order to prevent it from rapidly decomposing or participating in other reactions, the process time of the first stage is limited as described above.

[0068] In this embodiment, in order to promote the chemical reaction between the second plasma and the etching by-product particles 202 , it is also necessary to control the temperature of the inner wall and the pressure in the cavity 201 .

[0069] In other embodiments, whether to control the temperature of the inner wall and the pressure in the cavity and other conditions may be determined based on the conditions generated by the chemical reaction.

[0070] In this embodiment, in the first stage, the cleaning gas is introduced into the chamber 201 from the plurality of gas inlets 206 .

[0071] In this embodiment, while the cleaning gas is introduced into the cavity 201 , the flow meter is also used to obtain the gas flow at each position; based on the gas flow at each position, the flow of the cleaning gas entering from each gas inlet 206 is adjusted respectively.

[0072] In this embodiment, the first stage also uses the element measurement equipment to obtain the gas composition in the cavity 201; based on the gas composition, it is determined whether the etching byproduct particles 202 on the inner wall have been completely removed. If they have been completely removed, the cleaning process is terminated; otherwise, the cleaning process is continued.

[0073] Specifically, the content of the Al element in the cavity 201 can be measured. When the content of the Al element is high, it means that the etching by-product particles 202 have not been completely removed, and the cleaning process needs to be continued. On the contrary, when the content of the Al element is lower than a preset value, it can be considered that the etching by-product particles 202 have been completely removed, and the cleaning process is terminated.

[0074] In other embodiments, the Cl element content in the cavity may also be measured. When the Cl element content is high, it indicates that the etching by-product particles have not been completely removed, and the cleaning process needs to be continued. Conversely, when the Cl element content is lower than a preset value, it can be considered that the etching by-product particles have been completely removed, and the cleaning process is terminated.

[0075] In this embodiment, the first stage also utilizes the temperature measurement device to obtain real-time temperature measurements of the inner wall. Based on these temperature measurements, the temperature of the inner wall is controlled to control the chemical reaction. Specifically, using chlorine (Cl2) as the cleaning gas, as an example, since the temperature of the chemical reaction is required to be above 200°C, the temperature of the inner wall can be controlled within a reasonable range above 200°C.

[0076] In this embodiment, the method for controlling the temperature of the inner wall includes: heating the inner wall by a heater.

[0077] In this embodiment, the method for controlling the temperature of the inner wall further includes: cooling the inner wall through a cooling water pipe.

[0078] In this embodiment, the first stage further utilizes the pressure sensor to obtain real-time pressure measurements within the chamber 201. Based on these pressure measurements, the flow rate of the purge gas is adjusted to maintain the pressure within the chamber 201 within a preset range. Continuing with the example of chlorine (Cl2) as the purge gas, since the pressure requirement for the chemical reaction is between 1 Pa and 10 Pa (the preset range), the pressure within the chamber 201 is maintained within the range of 1 Pa to 10 Pa by adjusting the flow rate of the purge gas introduced through each gas inlet.

[0079] Continue to refer Figure 1 and Figure 2 , execute step S103. After the first stage is completed, the second stage is carried out, in which a protective gas is introduced into the cavity 201 and a vacuum operation is performed at the same time to purge the cavity 201 so that the unreacted cleaning gas and the chemical products are discharged from the cavity 201.

[0080] Specifically, in the second stage, the unreacted cleaning gas and the chemical products are discharged from the gas outlet 207 .

[0081] The protective gas includes nitrogen or an inert gas. In this embodiment, the protective gas is nitrogen.

[0082] In this embodiment, the number of cycles is 2.

[0083] In other embodiments, the number of cycles may be one or more. More preferably, the number of cycles is two to ten, so as to remove the main components of the etching byproduct particles and reduce the adverse effects of multiple cycles on the etching machine body.

[0084] In this embodiment, during the first stage of the second cycle, nitrogen fluoride (NF3) is used as the cleaning gas. The etcher body converts the NF3 into NF3 plasma. The free radical component (NF3•) in the plasma is adsorbed onto the inner wall surface and then chemically reacts with the solid aluminum fluoride (AlF3) in the etching byproduct particles 202, thereby forming a gaseous chemical product AlF3 that is easily discharged. The chemical reaction is as follows:

[0085] AlF3 (solid) + NF3• (free radicals in plasma) → AlF3 (gas) + N2 (gas) + F•.

[0086] In this embodiment, as described above, during the second cycle, the temperature of the inner wall and the pressure within the chamber 201 can also be controlled. Specifically, the temperature of the inner wall is controlled to be greater than 400°C, and the pressure within the chamber 201 is controlled to be within a range of 100 mTorr to 500 mTorr to promote the chemical reaction between NF3 and AlF3. The specific temperature and pressure control methods are described above and are not further elaborated here.

[0087] Similarly, in the first stage of the second cycle processing, the flow rate of the cleaning gas entering from each gas inlet 206 can be adjusted according to the gas flow rate at each position, and the gas composition in the cavity 201 can be used to determine whether the etching by-product particles 202 on the inner wall are completely removed. Please refer to the previous description for details, which will not be repeated here.

[0088] In this embodiment, a single cleaning gas is used in each of the cyclic processes, and the cleaning gases introduced in two adjacent cyclic processes are different. Using a single cleaning gas in each cyclic process can simplify the chemical reaction in the first stage, better control the reaction conditions, and improve the efficiency of removing the etching byproduct particles 202. Furthermore, using different cleaning gases in two adjacent cyclic processes can remove a certain component of the etching byproduct particles 202 in the first process, exposing a second component, and then primarily remove the second component, further improving the efficiency of removing the etching byproduct particles 202.

[0089] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be based on the scope defined by the claims.

Claims

1. A method for cleaning an etching machine cavity, characterized in that: include: An etching machine is provided, comprising an etcher main body and a chamber accommodating the etcher main body, wherein the etcher main body is configured to convert etching gas in the chamber into a first plasma and drive the first plasma to etch a wafer, wherein etching byproduct particles are attached to an inner wall of the chamber; The chamber is cleaned, and the cleaning process includes several cycles of treatment until the etching byproduct particles on the inner wall are completely removed. A single cycle of treatment includes: In the first stage, a cleaning gas is introduced into the chamber and converted into a second plasma by the etcher body. The second plasma is adsorbed onto the inner wall surface and chemically reacts with the etching byproduct particles to form gaseous chemical products. After the first stage is completed, the second stage is carried out, in which a protective gas is introduced into the cavity and a vacuum operation is performed simultaneously to purge the cavity so that the unreacted cleaning gas and the chemical products are discharged from the cavity.

2. The etching machine cavity cleaning method according to claim 1, characterized in that: The chamber has several gas inlets and at least one gas outlet; in the first stage, the cleaning gas is introduced into the chamber from the several gas inlets respectively; in the second stage, the unreacted cleaning gas and the chemical products are discharged from the gas outlet.

3. The etching machine cavity cleaning method according to claim 2, wherein: The plurality of air inlets and the air outlets are located at opposite ends of the cavity.

4. The etching machine cavity cleaning method according to claim 2, wherein: Flow meters are respectively set at multiple positions in the cavity; while introducing cleaning gas into the cavity, it also includes: using the flow meter to obtain the gas flow at each position; according to the gas flow at each position, respectively adjust the flow of the cleaning gas entering from each gas inlet.

5. The etching machine chamber cleaning method according to claim 1, wherein: An element measurement device is set in the cavity; the first stage also includes: using the element measurement device to obtain the gas composition in the cavity; based on the gas composition, determining whether the etching by-product particles on the inner wall have been completely removed, if they have been completely removed, then ending the cleaning process, otherwise continuing the cleaning process.

6. The etching machine chamber cleaning method according to claim 5, wherein: The element measurement equipment includes an atomic emission spectrometer.

7. The etching machine chamber cleaning method according to claim 5, wherein: A temperature measuring device is provided in the cavity; the first stage further includes: using the temperature measuring device to obtain the temperature measurement value of the inner wall in real time; controlling the temperature of the inner wall according to the temperature measurement value to control the chemical reaction.

8. The etching machine chamber cleaning method according to claim 7, wherein: The method for controlling the temperature of the inner wall includes: heating the inner wall by a heater; the heater includes a resistance wire, and the resistance wire is embedded in the cavity wall of the cavity.

9. The etching machine chamber cleaning method according to claim 7, wherein: The outer wall of the cavity is provided with a cooling water pipeline; the method for controlling the temperature of the inner wall includes: cooling the inner wall through the cooling water pipeline.

10. The etching machine chamber cleaning method according to claim 7, wherein: The temperature measuring device includes a thermocouple.

11. The etching machine chamber cleaning method according to claim 7, wherein: A pressure sensor is arranged in the cavity; The first stage further includes: using the pressure sensor to obtain a real-time pressure measurement value in the cavity; and adjusting the flow rate of the cleaning gas according to the pressure measurement value so that the pressure in the cavity reaches a preset range.

12. The etching machine chamber cleaning method according to claim 1, wherein: The cleaning gas includes one or more of nitrogen fluoride, chlorine, ammonia, hydrogen, and water vapor.

13. The etching machine chamber cleaning method according to claim 1, wherein: The cleaning gas in each of the cycle processes is a single gas, and the cleaning gases introduced in two adjacent cycle processes are different.

14. The etching machine chamber cleaning method according to claim 1, wherein: The protective gas includes nitrogen or an inert gas.

15. The etching machine chamber cleaning method according to claim 1, wherein: The number of cycles ranges from 2 to 10 times.

16. The etching machine chamber cleaning method according to claim 1, wherein: The etching by-product particles are also attached to the surface of the etcher main body, and the cleaning process is also used to remove the etching by-product particles on the surface of the etcher main body.

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