Physical vapor deposition auxiliary device and using method thereof

Abstract

The invention discloses a physical vapor deposition auxiliary device and a use method thereof, and relates to the technical field of semiconductor technologies, and the technical key points are that the physical vapor deposition auxiliary device comprises a machine body, a vacuum pump, an electron generation system, basic components of a reaction gas bin and a clean gas bin, and three functional modules of a target material cleaning module, a gas distribution optimization system and a multi-axis rotating workpiece table; the target material cleaning module adopts a coaxial nested structure, an outer-layer ion gun removes macroscopic pollutants of the target material, and an inner-layer focusing gun removes microscopic oxides; the gas distribution optimization system adjusts the gas distribution through an annular porous guide plate and a dynamic feedback control module, and maintains the air pressure in the cavity to be uniform; the multi-shaft rotating workpiece table utilizes a driving motor, a bevel gear set, a sliding rail and an electromagnetic driving system to achieve revolution, rotation and inclination angle adjustment of a workpiece. The problems that in the prior art, target cleaning is insufficient, gas distribution is uneven, and coating uniformity is poor can be effectively solved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor process technology, and in particular to a physical vapor deposition auxiliary device and a method for using the same. Background Art

[0002] During the physical vapor deposition (PVD) process, factors such as target surface cleanliness, uniform gas distribution within the chamber, and workpiece position and angle adjustment significantly impact the quality and performance of the deposited thin film. Traditional PVD equipment has shortcomings in these areas, such as incomplete target surface cleaning, uneven gas distribution, and difficulty in uniformly coating complex workpieces, limiting its application in high-end thin film manufacturing.

[0003] To address the aforementioned issues, a Chinese patent (Patent Publication No.: CN 118109786B) discloses an apparatus and method for preparing thermal barrier coatings by oxygen dissociation-assisted physical vapor deposition. When preparing the thermal barrier coating using electron beam physical vapor deposition, an electron gun emits a high-energy electron beam in a deposition chamber under high-temperature, high-vacuum conditions to bombard a ceramic target, causing it to melt and evaporate before being deposited on a substrate. During the electron beam bombardment of the target, a certain amount of oxygen is simultaneously introduced into a gas ionization chamber. A gas ionization system, constituted by an external power supply, applies high voltage to the gas ionization chamber, ionizing the introduced oxygen into oxygen ions, forming an oxygen plasma, which is then released into the vacuum deposition chamber. The highly chemically active oxygen plasma generated by the ionization can better combine with ionic species generated by the electron beam bombardment of the target, thereby providing sufficient oxygen supply during the physical vapor deposition process of the thermal barrier coating.

[0004] However, the device and method for preparing thermal barrier coatings by oxygen dissociation assisted physical vapor deposition still have some defects: first, the auxiliary device usually lacks the function of online cleaning of the target surface. Dust, impurities, etc. adsorbed on the target surface will enter the film during the sputtering process, increase the impurity content of the film, and affect the film performance; second, the existing auxiliary device does not give enough consideration to the uniform distribution of the working gas, resulting in uneven distribution of the gas in the coating chamber, affecting the uniformity of target atom sputtering and thin film deposition; third, the existing auxiliary device may not be able to guarantee uniform coating in all parts of the workpiece. Due to the concave, convex or corner parts of the workpiece, and due to the "line of sight" limitation of physical vapor deposition, it is difficult for the auxiliary device to make the gaseous particles reach these areas evenly. Summary of the Invention

[0005] The purpose of the present invention is to solve the above problems and provide a physical vapor deposition auxiliary device and its use method to solve the problems of insufficient target material cleaning, uneven gas distribution and poor coating uniformity in the prior art.

[0006] To achieve the above-mentioned objectives, the technical solution of the present invention is as follows: a physical vapor deposition auxiliary device, comprising a body, a vacuum pump, an electron generation system, a reaction gas chamber and a cleaning gas chamber component, a target cleaning module, a gas distribution optimization system, and three functional modules of a multi-axis rotating workpiece stage;

[0007] A vacuum chamber is formed inside the body, and a base and legs are provided at the bottom of the body; a vacuum pump is connected to the body and is used to maintain the vacuum degree of the vacuum chamber; a control panel is provided on the surface of the body for parameter setting and status monitoring; the electron generation system includes an electron emission source, a grid, an accelerating electrode, a control unit, an interface and a housing, and is used to generate an electron beam to excite gas ionization; the reaction gas chamber and the clean gas chamber respectively store reaction gas and clean gas, and are connected to the vacuum chamber through a gas inlet;

[0008] The target cleaning module adopts a coaxial nested structure, including an outer ion gun, an inner focusing gun and a surface monitoring sensor, which is used for macro and micro cleaning of the target surface; the gas distribution optimization system includes an annular porous guide plate, an annular porous guide plate including a guide bottom plate and a number of guide members evenly distributed on the guide bottom plate to form a number of guide channels, a number of channel gas inlets and a dynamic feedback control module, which is used to adjust the gas distribution and maintain uniform air pressure in the cavity; the multi-axis rotating workpiece table includes a drive motor, a bevel gear set, a sliding track and an electromagnetic drive system, which is used to realize the revolution, rotation and inclination adjustment of the workpiece; the multi-axis rotating workpiece table includes two sets of identical components, a target table and a workbench, the target table is arranged at the bottom of the body, used to fix the target material and is located in the emission direction of the target cleaning module, and the workbench is arranged at the top of the body, used to fix the deposition substrate and is located in the sputtering particle deposition direction of the target table.

[0009] Furthermore, the outer ion gun of the target cleaning module is used to bombard the target surface to remove macro contaminants, the inner focusing gun generates a high energy density ion beam to remove microscopic oxides on the target surface, and the surface monitoring sensor feeds back cleaning data to the control unit in real time.

[0010] Furthermore, the annular porous guide plate of the gas distribution optimization system includes a guide bottom plate and evenly distributed guide members, and the dynamic feedback control module adjusts the gas flow rate and guide angle in real time according to the gas pressure and flow state in the cavity.

[0011] Furthermore, the bevel gear set of the multi-axis rotating workpiece table includes a first bevel gear and a second bevel gear, which are driven by a driving motor to realize the revolution and rotation of the workpiece; the electromagnetic drive system controls the sliding block to move along the sliding track, and combines the spring to buffer vibration to adjust the inclination angle of the workpiece.

[0012] Furthermore, the electron generation system further comprises a cooling system including a cooling pipe and a radiator for circulating a cooling liquid to maintain a stable temperature of the electron generation system.

[0013] Furthermore, the control panel is connected to the dynamic feedback control module, the target cleaning module and the multi-axis rotating workpiece stage by signal, so as to realize automatic control of process parameters.

[0014] Furthermore, the multi-axis rotating workpiece platform further includes a lifting plate and a lifting rod, and the height and tilt angle of the workpiece platform are adjusted through the linkage of the support hinge and the connecting hinge.

[0015] A method for using any of the above-mentioned physical vapor deposition auxiliary devices comprises the following steps:

[0016] Starting the vacuum pump to evacuate the vacuum chamber to a preset vacuum level;

[0017] The outer ion gun and inner focusing gun are activated in sequence through the target cleaning module to remove macro and micro contaminants on the target surface;

[0018] The reaction gas is introduced into the cavity through a multi-channel gas inlet, and the gas is evenly distributed using an annular porous guide plate;

[0019] Fix the workpiece to be coated on the multi-axis rotating workpiece table, control the drive motor and electromagnetic drive system, and adjust the revolution, rotation and inclination of the workpiece;

[0020] The electron generation system is activated to generate an electron beam, which stimulates gas ionization for physical vapor deposition. At the same time, the gas flow rate and diversion angle are adjusted in real time through the dynamic feedback control module.

[0021] Furthermore, during the deposition process, the surface monitoring sensor monitors the cleanliness of the target material in real time and feeds the data back to the control unit to dynamically adjust the operating parameters of the ion gun.

[0022] Furthermore, the multi-axis rotary workpiece table has an orbital speed of 1-10 rpm, a rotation speed of 5-20 rpm, and an inclination adjustment range of 0-90°.

[0023] Compared with the existing technology, the beneficial effects of this solution are as follows: the present invention can thoroughly remove macro and micro pollutants on the surface of the target material through the synergistic effect of the outer ion gun and the inner focusing gun of the target cleaning module. The outer ion gun first bombards to remove large particles of impurities such as dust and oil, and the inner focusing gun then generates a high-energy density ion beam to remove microscopic oxides on the surface. The surface monitoring sensor monitors and feeds back cleaning data in real time, so that the control unit can accurately adjust the working parameters of the ion gun to ensure that the target material reaches atomic-level cleaning, reduce impurities entering the film from the source, significantly improve the film performance, and effectively solve the problem of insufficient target cleaning in the existing technology.

[0024] The gas distribution optimization system of the present invention realizes uniform distribution of gas and stable air pressure in the cavity through an annular multi-porous guide plate, a multi-channel gas inlet and a dynamic feedback control module. The multi-channel gas inlet can introduce different gases according to process requirements. The annular multi-porous guide plate evenly disperses the gas into a laminar flow to cover the surface of the workpiece. The dynamic feedback control module monitors the gas flow state and air pressure changes in real time, and adjusts the gas flow rate and guide angle according to the monitoring data, controlling the air pressure fluctuation within a very small range, creating a stable gas environment for thin film deposition, overcoming the defect of uneven gas distribution in the prior art, and improving the uniformity of target atom sputtering and thin film deposition.

[0025] The multi-axis rotating workpiece table of the present invention integrates a drive motor, a bevel gear set, a sliding track and an electromagnetic drive system, which can flexibly adjust the revolution, rotation and inclination of the workpiece. The revolution speed is 1-10rpm, the rotation speed is 5-20rpm, and the inclination angle is 0-90°, which can meet the needs of complex structure workpieces to uniformly receive particle deposition in all directions; the electromagnetic drive system controls the movement of the sliding block, cooperates with the spring to buffer vibration, and accurately adjusts the height and inclination of the workpiece table, effectively solving the problem of uneven coating caused by the complex shape of the workpiece, improving the coating coverage and quality, and overcoming the problem that the existing technology is difficult to ensure the uniformity of coating. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 Schematic diagram of the overall structure of an embodiment of the present invention;

[0027] Figure 2 This is a schematic diagram of the overall left sectional structure of an embodiment of the present invention;

[0028] Figure 3 This is a schematic diagram of the target platform structure in an embodiment of the present invention;

[0029] Figure 4 This is a schematic diagram of the overall side right sectional structure of an embodiment of the present invention;

[0030] Figure 5 2. This is a schematic diagram of the structure of the curved porous guide plate in an embodiment of the present invention;

[0031] Figure 6 Schematic diagram of the enlarged structure of the electron generation system in an embodiment of the present invention.

[0032] In the figure: 1. Body; 101. Base; 102. Support leg; 2. Vacuum pump; 3. Electron generation system; 301. Electron emission source; 302. Grid; 303. Accelerating electrode; 304. Control unit; 305. Interface; 306. Housing; 307. Cooling system; 4. Reaction gas chamber; 5. Cleaning gas chamber; 6. Target cleaning module; 601. Ion gun; 602. Focusing gun; 7. Annular porous guide plate; 701. Guide member; 702. Guide channel;

[0033] 8. Multi-axis rotating workpiece table; 801. Target material; 802. Fixture fastener; 803. Base plate; 804. Connecting sleeve; 805. Rotating part; 806. Spring; 807. Fixing ring; 808. Driving sleeve; 809. First bevel gear; 810. Second bevel gear; 811. Sliding block; 812. Sliding track; 813. Driving motor; 814. Lifting rod; 815. Lifting plate; 816. Connecting hinge; 817. Support hinge; 818. Deposition substrate; 819. Rotating shaft; 9. Control panel; 10. Sputtering particles. DETAILED DESCRIPTION

[0034] In order to enable those skilled in the art to better understand the present invention, the technical solution of the present invention will be further described in detail below in conjunction with the embodiments of the present invention and the accompanying drawings. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts should fall within the scope of protection of the present invention.

[0035] It should be noted that, in the absence of conflict, the embodiments and features of the embodiments of the present invention can be combined with each other. The present invention will be described in detail below with reference to the embodiments.

[0036] Example 1: Figure 1-6 As shown, a physical vapor deposition auxiliary device includes basic components such as a body 1, a vacuum pump 2, a control panel 9, a base 101, a support leg 102, an electron generation system 3, a reaction gas chamber 4 and a cleaning gas chamber 5, as well as three functional modules including a target material 801 cleaning module 6, a gas distribution optimization system, and a multi-axis rotating workpiece table 8. The various components and modules cooperate with each other to jointly realize an efficient thin film deposition process.

[0037] The body 1 of the present invention is a rectangular metal shell 306, which serves as the main structure of the entire device and provides a mounting base and support for other components, thereby protecting the internal components and maintaining the stability of the overall structure of the device. The bottom of the body 1 is provided with a base 101, which is equipped with anti-skid pads and support feet 102 for supporting the entire device and placing it stably on the ground. The anti-skid pads also prevent the device from displacement or vibration during operation. The support feet 102 are used to adjust the height and increase stability. They are connected to the four corners of the base 101 to support the entire device.

[0038] The vacuum pump 2 of the present invention is arranged on the upper right side of the body 1, and generates centrifugal force through mechanical movement, sucking gas from the air inlet and discharging it through the exhaust port, thereby realizing the extraction of gas in the body 1 and forming a vacuum environment. It is connected to the inside of the body 1 of the present invention, and is responsible for continuously extracting gas in the cavity during the deposition process, maintaining the required vacuum degree, providing a stable vacuum environment for physical vapor deposition, and preventing impurities in the air from affecting the quality of thin film deposition. The control panel 9 is arranged on the surface of the body 1. The control panel 9 displays the operating status and parameters of the device in real time, and the indicator light is used to prompt the working status of the device, such as power status, fault alarm, etc. It is connected to the control unit 304 of the present invention as a human-computer interaction interface. The operator can set the deposition process parameters, such as gas flow, deposition time, temperature, etc. through the control panel 9, and monitor the operating status of the device in real time.

[0039] The electron generation system 3 of the present invention comprises an electron emission source 301, a grid 302, an accelerating electrode 303, a control unit 304, an interface 305 and a housing 306. The electron emission source 301 is a field emission tip structure, the anode is a metal electrode, and the accelerating electrode 303 is an electrode with a hole of a specific shape. When the electron emission source 301 is energized, electrons are generated. The electrons are accelerated under the action of the electric field formed by the anode and the accelerating electrode 303 to form an electron beam, which is used to excite gas atoms to produce glow discharge, thereby realizing evaporation or sputtering in the physical vapor deposition process. The electron generation system 3 is installed inside the device and is connected to the power supply and control unit. The panel 9 is connected to provide the energy source required for the deposition process, and its interface 305 is connected to the input end of the target material 801 cleaning module 6; the electron generation system 3 also includes a cooling system 307, which is installed at the bottom of the electron generation system 3. The cooling system 307 drives the coolant to circulate in the cooling pipe, and the radiator dissipates the heat taken away by the coolant to the surrounding environment. It is connected to the electron generation system 3 of the present invention, and the circulation of the coolant takes away the heat generated by the components during operation, maintaining the device in stable operation at an appropriate temperature, and preventing overheating from having adverse effects on the device and the coating quality.

[0040] The housing 1 of the present invention also houses a reaction gas chamber 4 and a clean gas chamber 5. These chambers have a certain volume for storing gases. The reaction gas chamber 4 stores gases involved in the deposition reaction, such as nitrogen; the clean gas chamber 5 stores gases used for cleaning, such as argon. These chambers are connected to corresponding gas inlets and pipelines, and during the deposition process, they deliver gases into the chamber according to instructions from the control unit 304.

[0041] The target 801 cleaning module 6 utilizes a coaxial nested structure, with an outer ion gun 601 and an inner focusing gun 602. The outer ion gun 601 is responsible for macroscopic cleaning of the target 801 surface, removing larger particulate contaminants such as dust and oil. The inner focusing gun 602 focuses the ion beam on the target 801 surface, generating a high-energy-density ion beam that removes microscopic oxides from the target 801 surface, achieving atomic-level cleanliness. Furthermore, a surface monitoring sensor is integrated to monitor the cleanliness of the target 801 surface in real time and feed this data back to the control unit 304.

[0042] The gas distribution optimization system is designed with an annular multi-porous guide plate 7 inside the body 1. The annular multi-porous guide plate 7 includes a guide bottom plate and a plurality of guide members 701 evenly distributed on the guide bottom plate, so that a plurality of guide channels 702 can be formed. At the same time, it is equipped with a multi-channel gas inlet and a dynamic feedback control module. The multi-channel gas inlet can introduce reaction gases of different types or different flow rates. The dynamic feedback control module monitors the gas flow state and air pressure changes in the cavity in real time, and adjusts the flow rate of the gas inlet and the guide angle of the guide plate in real time according to the monitoring data to ensure that the gas is evenly distributed in the cavity and the air pressure fluctuation is controlled within a very small range.

[0043] The multi-axis rotating workpiece table 8 includes a driving rod, a first bevel gear 809, a second bevel gear 810, a sliding block 811, a sliding track 812, a supporting hinge 817, a connecting hinge 816, a lifting plate 815, a lifting rod 814, a driving sleeve 808, a fixing ring 807, a spring 806, a rotating member 805 and a connecting sleeve 804; the multi-axis rotating workpiece table 8 is used to mount the workpiece to be coated, and the driving motor 813 drives the first bevel gear 809 and the second bevel gear 810 to rotate, thereby realizing the revolution and rotation of the workpiece table and dynamically adjusting the sputtering angle. It drives the support hinge 817 and the connecting hinge 816 to move, changes the height of the lifting plate 815 and the lifting rod 814, and thus adjusts the inclination angle of the workpiece table, so that the workpiece with complex structure can receive the deposition of sputtered particles 10 evenly in all directions; the electromagnetic drive system controls the sliding block 811 to move on the sliding track 812, supports the linear movement of the multi-axis rotating workpiece table 8, and combines with the spring 806 to buffer vibration; the revolution speed of the multi-axis rotating workpiece table 8 is 1-10rpm, the rotation speed is 5-20rpm, and the inclination adjustment range is 0-90°.

[0044] The multi-axis rotating workpiece table 8 includes two identical components, a target table and a workbench. The target table is installed at the bottom of the body 1, used to fix the target material 801 and is located in the emission direction of the target material 801 cleaning module 6. The workbench is installed at the top of the body 1, used to fix the deposition substrate 818 and is located in the deposition direction of the sputtered particles 10 of the target table; the multi-axis rotating workpiece table 8 realizes multi-directional precision adjustment and positioning of the target material 801 through a modular structure, and its core is composed of a clamp fastener 802 system, a transmission mechanism and a drive system; the clamp fastener 802 system uses the bottom plate 803 as the base, and is connected to the rotating shaft 819 through the connecting sleeve 804 to ensure the continuity of power transmission; the drive sleeve 808 transmits the motor power to the rotating shaft 819, driving the rotating part 805 and the target material 801 to rotate around the main axis. The transmission mechanism adopts a bevel gear set (the first bevel gear 809 is fixed to the rotating shaft 819, and the second bevel gear 810 is directly driven by the drive motor 813) to convert horizontal rotation into vertical movement. At the same time, the vertical lifting (Z-axis) of the target material 801 is realized through the threaded or hydraulic mechanism of the lifting plate 815 and the lifting rod 814. The multi-directional adjustment mechanism relies on the horizontal displacement of the sliding block 811 along the guide rail, the angular adjustment (pitch and yaw) of the support hinge 817 and the connecting hinge 816, combined with the elastic buffering and locking functions of the spring 806 and the fixing ring 807 to achieve multi-degree-of-freedom fine-tuning of the workpiece. The drive system is centered on the encoder motor, which accurately controls the speed and angle, and supports multi-axis linkage to complete complex trajectories such as spiral lifting or tilt rotation. This structure is suitable for fields such as precision machining and optical detection, and meets the requirements of high-precision positioning and complex paths through coordinated motion.

[0045] Working Principle and Process: Before deposition begins, the target cleaning module is activated. First, the outer ion gun is powered on, generating an ion beam that bombards the target surface, removing larger particles of macro-contaminants. Subsequently, the inner focusing gun is activated, generating a high-energy-density ion beam that removes microscopic oxides from the target surface. A surface monitoring sensor monitors the target surface cleanliness in real time and feeds this data back to the control unit. This feedback accurately adjusts the ion gun operating parameters to ensure optimal target surface cleanliness.

[0046] Reactive gases enter the chamber through a multi-channel gas inlet and are evenly distributed by an annular, porous guide plate, forming a laminar flow that covers the workpiece surface. A dynamic feedback control module monitors the gas flow and pressure changes within the chamber in real time. Based on this data, the control unit adjusts the gas inlet flow rate and the guide plate's angle of diversion to ensure uniform gas distribution within the chamber, providing a stable gas environment for thin film deposition.

[0047] The workpiece to be coated is mounted on a multi-axis rotary workpiece stage. During the deposition process, a control unit controls the drive motor, driving the first and second bevel gears to rotate, achieving both orbital and rotational motion of the multi-axis rotary workpiece stage and dynamically adjusting the workpiece's sputtering angle. Simultaneously, an electromagnetic drive system controls the movement of the sliding block on the slide rail, driving the support hinge and connecting hinge to change the height of the lifting plate and lifting rod, thereby adjusting the inclination angle of the workpiece stage. This ensures that complex workpieces receive evenly deposited sputtered particles from all directions, improving coating coverage, reducing thickness variations, and ensuring coating quality.

[0048] The above specific embodiments are merely explanations of the present invention and are not limitations of the present invention. After reading this specification, those skilled in the art may make non-creative modifications to the embodiments as needed. However, as long as they are within the scope of the claims of the present invention, they are protected by patent law.

Claims

1. A physical vapor deposition auxiliary device, characterized in that: The invention comprises three functional modules: a machine body (1), a vacuum pump (2), an electron generation system (3), a reaction gas chamber (4), a cleaning gas chamber (5), a target material (801) cleaning module (6), a gas distribution optimization system, and a multi-axis rotating workpiece table (8); A vacuum cavity is formed inside the body (1), and a base (101) and a support leg (102) are provided at the bottom of the body (1); the vacuum pump (2) is connected to the body (1) and is used to maintain the vacuum degree of the vacuum cavity; a control panel (9) is provided on the surface of the body (1) for parameter setting and status monitoring; the electron generation system (3) comprises an electron emission source (301), a grid (302), an accelerating electrode (303), a control unit (304), an interface (305) and a housing (306), and is used to generate an electron beam to excite gas ionization; the reaction gas chamber (4) and the cleaning gas chamber (5) respectively store reaction gas and cleaning gas, and are connected to the vacuum cavity through a gas inlet; The target material (801) cleaning module (6) adopts a coaxial nested structure, including an outer ion gun (601), an inner focusing gun (602) and a surface monitoring sensor, and is used for macroscopic and microscopic cleaning of the target material (801) surface; the gas distribution optimization system includes an annular porous guide plate (7), an annular porous guide plate (7) including a guide bottom plate and a plurality of guide members (701) evenly distributed on the guide bottom plate to form a plurality of guide channels (702), a plurality of channel gas inlets and a dynamic feedback control module for adjusting gas distribution and maintaining uniform gas pressure in the cavity; the multi- The multi-axis rotating workpiece table (8) comprises a driving motor (813), a bevel gear set, a sliding track (812) and an electromagnetic drive system, and is used to realize the revolution, rotation and inclination adjustment of the workpiece; the multi-axis rotating workpiece table (8) comprises two identical components, a target table and a workbench, wherein the target table is arranged at the bottom of the machine body (1) and is used to fix the target material (801) and is located in the emission direction of the target material (801) cleaning module (6); the workbench is arranged at the top of the machine body (1) and is used to fix the deposition substrate (818) and is located in the deposition direction of the sputtered particles (10) of the target table.

2. The physical vapor deposition auxiliary device according to claim 1, characterized in that: The outer ion gun (601) of the target material (801) cleaning module (6) is used to bombard the surface of the target material (801) to remove macroscopic contaminants, the inner focusing gun (602) generates a high energy density ion beam to remove microscopic oxides on the surface of the target material (801), and the surface monitoring sensor feeds back cleaning data to the control unit (304) in real time.

3. The physical vapor deposition auxiliary device according to claim 1, characterized in that: The annular porous guide plate (7) of the gas distribution optimization system comprises a guide bottom plate and evenly distributed guide members (701), and the dynamic feedback control module adjusts the gas flow rate and the guide angle in real time according to the gas pressure and flow state in the cavity.

4. The physical vapor deposition auxiliary device according to claim 1, characterized in that: The bevel gear set of the multi-axis rotating workpiece platform (8) includes a first bevel gear (809) and a second bevel gear (810), which are driven by a drive motor (813) to realize the revolution and rotation of the workpiece; the electromagnetic drive system controls the sliding block (811) to move along the sliding track (812), and is combined with a spring (806) to buffer vibration to adjust the inclination angle of the workpiece.

5. The physical vapor deposition auxiliary device according to claim 1, characterized in that: The electron generation system (3) further comprises a cooling system (307) comprising a cooling pipe and a radiator for circulating a cooling liquid to maintain a stable temperature of the electron generation system (3).

6. The physical vapor deposition auxiliary device according to claim 1, characterized in that: The control panel (9) is connected to the dynamic feedback control module, the target material (801) cleaning module (6) and the multi-axis rotating workpiece table (8) via signals to achieve automatic control of process parameters.

7. The physical vapor deposition auxiliary device according to claim 4, characterized in that: The multi-axis rotating workpiece platform (8) further comprises a lifting plate (815) and a lifting rod (814), and the height and tilt angle of the workpiece platform are adjusted by the linkage of a support hinge (817) and a connecting hinge (816).

8. A method for using the physical vapor deposition auxiliary device according to any one of claims 1 to 7, characterized in that: The following steps are involved: Starting the vacuum pump (2) to evacuate the vacuum chamber to a preset vacuum level; The outer ion gun (601) and the inner focusing gun (602) are sequentially activated through the target material (801) cleaning module (6) to remove macroscopic and microscopic contaminants on the surface of the target material (801); The reaction gas is introduced into the cavity through the multi-channel gas inlet, and the gas is evenly distributed using the annular multi-porous guide plate (7); Fixing the workpiece to be coated on a multi-axis rotating workpiece table (8), controlling the drive motor (813) and the electromagnetic drive system, and adjusting the revolution, rotation and inclination of the workpiece; The electron generation system (3) is activated to generate an electron beam, which excites gas ionization to perform physical vapor deposition, and at the same time, the gas flow rate and the guide angle are adjusted in real time through a dynamic feedback control module.

9. The method of use according to claim 8, characterized in that: During the deposition process, the surface monitoring sensor monitors the cleanliness of the target material (801) in real time and feeds the data back to the control unit (304) to dynamically adjust the operating parameters of the ion gun (601).

10. The method of use according to claim 8, characterized in that: The multi-axis rotating workpiece table (8) has a revolution speed of 1-10 rpm, a rotation speed of 5-20 rpm, and an inclination adjustment range of 0-90°.

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