Wafer plasma processing device

Abstract

The invention provides a wafer plasma processing device, and relates to the technical field of semiconductor equipment, the wafer plasma processing device comprises a process cavity, the inner wall of the process cavity extends along the radial direction to form n first bearing platforms, and n is greater than or equal to 1; the lower electrode supporting seat is located in the process cavity, n second bearing platforms in one-to-one correspondence with the first bearing platforms extend on the outer wall of the lower electrode supporting seat in the radial direction, and the second bearing platforms and the corresponding first bearing platforms are oppositely arranged; the cantilever assembly comprises a supporting arm and n auxiliary arms which are uniformly distributed at intervals in the circumferential direction of the lower electrode supporting seat; wherein the lower electrode supporting seat is connected with the process cavity through the supporting arms, and each pair of the first bearing platform and the second bearing platform which are oppositely arranged are matched with each other to bear one auxiliary arm. Through the design of the symmetrical cantilevers, the solid arms, the symmetrical conductive paths and the like, the flow field uniformity, the ventilation efficiency and the electric field uniformity are improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and in particular to a wafer plasma processing device. Background Art

[0002] Dry etching equipment, such as ICP / CCP, places high demands on etch topography, mark size, etch rate, and on-wafer uniformity. The realization of these requirements is closely related to the process chamber structure and device composition.

[0003] Taking ICP etching equipment as an example, the top of the process chamber is equipped with a dielectric window, an air inlet structure, and an upper electrode assembly. The dielectric window cover is located at the top of the process chamber. The air inlet structure is used to supply process gas into the process chamber. The upper electrode assembly is located above the dielectric window and is used to feed radio frequency into the process chamber. The radio frequency excites the process gas to form a plasma, which then etches the wafer in the process chamber. In semiconductor processing, the symmetry and uniformity of the flow field and electric field in the process chamber affect the etching uniformity of the wafer.

[0004] However, in a typical ICP etching equipment, a single support arm connected to the side wall of the lower electrode support seat is provided in the process chamber. The single support arm causes asymmetry and unevenness in the flow field and electric field in the process chamber, which affects the etching uniformity and thus affects the product yield. Summary of the Invention

[0005] An object of the present invention is to provide a wafer plasma processing device for solving at least one technical problem existing in the above prior art.

[0006] In order to achieve the above objectives, the present invention is implemented through the following technical solutions:

[0007] A wafer plasma processing apparatus, comprising:

[0008] The process chamber has an inner wall with n first supports extending radially, where n≥1;

[0009] The lower electrode support seat is located inside the process chamber, and its outer wall is radially extended with n second support platforms corresponding to each first support platform, and each second support platform is arranged opposite to the corresponding first support platform;

[0010] A cantilever assembly comprising one support arm and n auxiliary arms uniformly spaced circumferentially around the lower electrode support seat;

[0011] The lower electrode support seat is connected to the process chamber through a support arm, and each pair of the first support platform and the second support platform arranged opposite to each other cooperates to support an auxiliary arm.

[0012] In some embodiments, each auxiliary arm is a solid arm;

[0013] The supporting arm comprises a solid part and a channel part. The solid part is arranged around the channel part, and the channel part is a line channel.

[0014] In some embodiments, a conductive path is formed between the lower electrode support and the process chamber, and the conductive path sequentially includes:

[0015] The second support platform, the second inductive coil disposed between the auxiliary arm and the second support platform, the auxiliary arm, the first inductive coil disposed between the auxiliary arm and the first support platform, and the first support platform.

[0016] In some embodiments, the auxiliary arm is fixedly connected to the first support platform by at least one first fastener; the auxiliary arm is fixedly connected to the second support platform by at least one second fastener.

[0017] In some embodiments, the second fastener passes through the auxiliary arm in the height direction and is then threadedly connected to the second support platform. The second fastener is configured to adjust the horizontality of the lower electrode support seat by adjusting the depth of the second fastener screwed into the second support platform.

[0018] In some embodiments, the process chamber includes a chamber body and a door assembly, wherein:

[0019] The chamber body has an opening,

[0020] The door assembly is used to cover the opening, and the lower electrode support seat is connected to the door assembly through a support arm.

[0021] In some embodiments, the door assembly includes a door plate and a chamber matching block, wherein the chamber matching block is mounted on a side of the door plate facing the lower electrode support seat, and the chamber matching block can be inserted into the opening of the chamber body;

[0022] The inner surface of the chamber matching block and the inner wall surface of the chamber body are arc surfaces with the same diameter and are concentric. When the chamber matching block is embedded in the chamber body, the inner surface of the chamber matching block and the inner wall surface of the chamber body form a complementary continuous transition curved surface.

[0023] In some embodiments, a third inductive coil is provided between the chamber matching block and the door panel.

[0024] In some embodiments, a first channel is opened in the middle of the chamber matching block, and the support arm passes through the first channel and is connected to the door panel.

[0025] In some embodiments, a fourth inductive coil is provided between the support arm and the door panel, and at least one first sealing ring is provided at the joint surface between the support arm and the door panel.

[0026] In some embodiments, the door assembly includes two guide rods, and the chamber body is provided with guide holes corresponding to the guide rods one by one, and each guide rod can be slidably engaged in the corresponding guide hole.

[0027] In some embodiments, the wafer plasma processing apparatus further includes an adjustment base;

[0028] The adjustment base is installed on the top of the process chamber, and a second sealing ring is provided between the bottom surface of the adjustment base and the top surface of the process chamber.

[0029] In some embodiments, the wafer plasma processing apparatus further includes an annular liner installed in the process chamber;

[0030] An annular sink extending in the radial direction is provided on the inner side of the top wall of the process chamber;

[0031] The top of the annular liner is provided with an inner liner flange extending in the radial direction, and the inner liner flange is embedded in the annular sink;

[0032] A plasma shielding ring is provided between the top surface of the lining flange and the bottom surface of the adjustment base.

[0033] In some embodiments, the wafer plasma processing apparatus further comprises a dielectric window mounted on the adjustment base, wherein a third sealing ring is provided at the junction between the dielectric window and the adjustment base;

[0034] The adjustment base has a truncated cone-shaped inner cavity, and the cross-sectional area of ​​the truncated cone-shaped inner cavity gradually increases from top to bottom.

[0035] In some embodiments, a liner grounding ring is provided between the annular liner and the lower electrode support seat, and the annular liner is grounded to the lower electrode support seat through the liner grounding ring.

[0036] In some embodiments, the support arm and the n auxiliary arms are located at the same height, and the support arm and the n auxiliary arms are all located below the annular liner.

[0037] In some embodiments, the wafer plasma processing apparatus further includes an insulating ring and an electrostatic chuck;

[0038] The insulating ring is installed on the top of the lower electrode support, and the electrostatic chuck is installed on the insulating ring

[0039] Compared with the prior art, the present invention has the following advantages:

[0040] 1. The present invention provides a highly symmetrical cantilever assembly, which includes one support arm and n auxiliary arms, evenly distributed between the process chamber and the lower electrode support base, effectively avoiding the flow field and electric field asymmetry problems caused by the traditional single-arm structure. This symmetrical layout improves plasma uniformity, enhances wafer etching uniformity, and improves product yield.

[0041] 2. In the present invention, both the support arm and the auxiliary arm are designed as solid arms. Compared with the hollow arms in the prior art, the solid arms can occupy more space inside the process chamber, reducing the surplus space, improving the ventilation efficiency, and shortening the process cycle;

[0042] 3. The present invention adjusts the horizontality of the lower electrode support seat by the depth of the second fastener screwed into the second support platform. Compared with the traditional single-arm structure, this design can more conveniently adjust the horizontality of the lower electrode support seat;

[0043] 4. The present invention forms n+1 evenly distributed conductive paths between the lower electrode support and the process chamber through the cooperation of the first and second inductive coils, thereby improving the uniformity of the plasma electric field around the lower electrode support.

[0044] 5. In the present invention, the door assembly forms a drawer-type matching structure with the chamber body through the guide rod. The lower electrode support seat, the support arm, and the door assembly can be moved out of or into the chamber body as a whole, which facilitates the maintenance of the lower electrode support seat;

[0045] 6. In the present invention, the inner surface of the chamber matching block and the inner wall surface of the process chamber form a closed and complementary continuous transition surface when the chamber matching block is embedded in the chamber body, thereby ensuring the uniformity of the flow field in the process chamber;

[0046] 7. In the present invention, only one sealing ring needs to be set between the adjustment base and the process chamber, and the lining flange of the annular lining does not need to participate in the sealing, which simplifies the sealing structure, reduces the original two leakage points to one, reduces the leakage risk, and improves the sealing reliability of the equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] In order to more clearly illustrate the technical solution of the present invention, the following briefly introduces the drawings required for the description. Obviously, the drawings described below are one embodiment of the present invention. Those skilled in the art can also derive other drawings based on these drawings without inventive effort:

[0048] Figure 1 Schematic diagram of the cross-sectional structure of a wafer plasma processing device in an embodiment of the present application;

[0049] Figure 2 Schematic diagram of a top view of the wafer plasma processing apparatus in an embodiment of the present application when the adjustment base, dielectric window and annular liner are not installed;

[0050] Figure 3 This is a schematic diagram of the three-dimensional structure of the wafer plasma processing apparatus in an embodiment of the present application when the adjustment base, dielectric window and annular liner are not installed;

[0051] Figure 4 Schematic diagram of the installation of the auxiliary arm and the first platform / second platform in the wafer plasma processing apparatus in an embodiment of the present application;

[0052] Figure 5 Schematic diagram of the structure of the auxiliary arm in the wafer plasma processing device in the embodiment of the present application;

[0053] Figure 6 Schematic diagram of the three-dimensional structure of the wafer plasma processing apparatus in the embodiment of the present application when the adjustment base and the dielectric window are not installed;

[0054] Figure 7 Schematic diagram of a top view of the wafer plasma processing apparatus in an embodiment of the present application when the adjustment base and the dielectric window are not installed;

[0055] Figure 8 A schematic diagram of the lower electrode support seat being moved out of the chamber body in an embodiment of the present application;

[0056] Figure 9 Schematic diagram of the structure of the door plate and chamber matching block in the wafer plasma processing device in the embodiment of the present application;

[0057] Figure 10 Schematic diagram of the installation of the support arm and door assembly in the wafer plasma processing apparatus in an embodiment of the present application;

[0058] Figure 11 Schematic diagram of the three-dimensional structure of the door assembly in the wafer plasma processing apparatus in the embodiment of the present application;

[0059] Figure 12 is a partial cross-sectional schematic diagram of a wafer plasma processing apparatus in an embodiment of the present application;

[0060] Figures 1 to 12 Included are:

[0061] Process chamber 1: first support 101, first locating pin 1011, annular sink 102, chamber body 11, opening 111, guide hole 112, door assembly 12, door plate 121, third locating pin 1211, chamber matching block 122, first channel 1221, guide rod 123;

[0062] Lower electrode support 2: second support platform 201, second positioning pin 2011;

[0063] Cantilever assembly 3: support arm 31, auxiliary arm 32, first positioning slot 321, second positioning slot 322, first mounting hole 323, second mounting hole 324, first positioning hole 325, second positioning hole 326;

[0064] First induction coil 4; second induction coil 5; first fastener 6; second fastener 7; third induction coil 8; fourth induction coil 9; first sealing ring 10; adjustment base 11; second sealing ring 12;

[0065] Annular lining 13: lining flange 131, gas uniforming ring 132, gas channel 1321;

[0066] Plasma shielding ring 14; dielectric window 15; third sealing ring 16; liner grounding ring 17; insulating ring 18; electrostatic chuck 19. DETAILED DESCRIPTION

[0067] The scheme proposed in the present invention is further described in detail below in conjunction with the accompanying drawings and specific implementation methods. According to the following description, the advantages and features of the present invention will be clearer. It should be noted that the drawings are in a very simplified form and use non-precise proportions, which are only used to conveniently and clearly assist in explaining the purpose of the implementation methods of the present invention. In order to make the purposes, features and advantages of the present invention more obvious and easy to understand, please refer to the accompanying drawings. It should be noted that the structures, proportions, sizes, etc. illustrated in the drawings of this specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the limiting conditions for the implementation of the present invention, so they have no technical substantive significance. Any structural modification, change in proportional relationship or adjustment of size, without affecting the efficacy and purpose that can be achieved by the present invention, should still fall within the scope of the technical content disclosed by the present invention.

[0068] like Figure 1-3 As shown, a wafer plasma processing device comprises:

[0069] The process chamber 1 has n first platforms 101 extending radially from its inner wall, where n≥1;

[0070] The lower electrode support 2 is located inside the process chamber 1. The outer wall of the lower electrode support 2 has n second platforms 201 extending radially therefrom, corresponding one to one with each first platform 101. Each second platform 201 is arranged opposite to the corresponding first platform 101.

[0071] The cantilever assembly 3 includes a support arm 31 and n auxiliary arms 32 that are evenly spaced around the lower electrode support seat 2;

[0072] The lower electrode support seat 2 is connected to the process chamber 1 through a support arm 31 , and each pair of the first support platform 101 and the second support platform 201 arranged opposite to each other cooperates to support an auxiliary arm 32 .

[0073] By evenly arranging n auxiliary arms 32 and one support arm 31 between the inner wall of the process chamber 1 and the outer wall of the lower electrode support 2, the cantilever assembly 3 of the present invention forms a highly symmetrical structure. Compared to the traditional single support arm design, this symmetrical layout has the following significant advantages:

[0074] The highly symmetrical cantilever assembly 3 effectively avoids the flow and electric field asymmetry problems caused by traditional single-arm structures, ensuring a more uniform distribution of airflow within the chamber. The symmetrical flow field distribution improves plasma uniformity, thereby significantly improving wafer etching uniformity, reducing etching depth deviation, and improving product yield.

[0075] In addition, the first supporting platform 101 and the second supporting platform 201 serve as the supporting structure of the cantilever assembly 3. Each pair of relatively arranged first supporting platforms 101 and second supporting platforms 201 cooperate to support an auxiliary arm 32, making the positioning and installation of the auxiliary arm 32 more convenient, and ensuring that the position of each auxiliary arm 32 is accurate and stably supported, thereby improving the overall structural stability of the cantilever assembly 3.

[0076] Optional, such as Figure 2 As shown, there are three auxiliary arms 32 and one support arm 31 , and the three auxiliary arms 32 and one support arm 31 form a centrally symmetrical cantilever assembly 3 .

[0077] Optionally, the shape of the portion of the support arm 31 located in the inner cavity of the process chamber 1 is the same as or similar to the shape of each auxiliary arm 32 .

[0078] Optionally, each auxiliary arm 32 is a solid structure (solid arm);

[0079] The support arm 31 includes a solid portion and a channel portion. The solid portion is arranged around the channel portion, and the channel portion is a line channel.

[0080] The support arm 31 and the auxiliary arm 32 of the present application are both solid structures, which have at least the following two beneficial effects:

[0081] 1. Compared with the hollow arms made of thin-walled materials in the prior art, the support arm 31 and the auxiliary arm 32 of the present application are both solid structures, which can better guide the airflow, reduce airflow disturbances, ensure a more uniform plasma distribution, and thus improve the accuracy and consistency of the etching process.

[0082] 2. When the ICP Bosch process is used for deep silicon etching, its core lies in forming a deep silicon structure with a high aspect ratio and vertical sidewalls through repeated and alternating etching and passivation cycles; the specific process involves: in the etching stage, the etching gas is introduced and the plasma is excited to etch the silicon; in the passivation stage, the passivation gas is introduced to deposit a protective layer on the surface of the etching groove to inhibit the lateral etching of the sidewall of the etching groove; therefore, the rapid switching of the etching gas and the passivation gas is very important in this process; and the support arm 31 and the auxiliary arm 32 of the solid arm in this application are both solid structures, which can occupy more internal space of the process chamber 1 compared to the hollow arm, thereby reducing the volume of the process gas in the process chamber 1, thereby improving the switching efficiency of the etching gas and the passivation gas, and shortening the process cycle.

[0083] Optional, see Figure 4 A conductive path is formed between the lower electrode support 2 and the process chamber 1, and the conductive path sequentially includes:

[0084] The second support 201 , the second inductive coil 5 provided between the auxiliary arm 32 and the second support 201 , the auxiliary arm 32 , the first inductive coil 4 provided between the auxiliary arm 32 and the first support 101 , and the first support 101 .

[0085] Among them, the second inductive coil 5 makes the auxiliary arm 32 conductively contact with the second support platform 201 of the lower electrode support seat 2; the first inductive coil 4 makes the auxiliary arm 32 conductively contact with the first support platform 101 of the process chamber 1; through the cooperation of the first inductive coil 4 and the second inductive coil 5, the lower electrode support seat 2 and the process chamber 1 are conductively connected, thereby forming n+1 uniformly distributed conductive paths between the lower electrode support seat 2 and the process chamber 1 as a whole, which helps to improve the uniformity of the plasma electric field circumferentially of the lower electrode support seat 2.

[0086] Optionally, a first positioning groove 321 and a second positioning groove 322 are provided on the bottom surface of the auxiliary arm 32 at intervals along the radial direction.

[0087] The first positioning groove 321 faces the first support platform 101 , and the second positioning groove 322 faces the second support platform 201 ;

[0088] The first induction coil 4 is disposed in the first positioning groove 321 , and the shape of the first induction coil 4 is adapted to the shape of the first positioning groove 321 ;

[0089] The second inductive coil 5 is disposed in the second positioning groove 322 , and the shape of the second inductive coil 5 is adapted to the shape of the second positioning groove 322 .

[0090] Optionally, the first inductive coil 4 is arc-shaped, and the distances between each circumferential position of the arc-shaped first inductive coil 4 and the outer peripheral wall of the lower electrode support seat 2 are equal, and the center of curvature of the first inductive coil 4 coincides with the center of curvature of the outer peripheral wall of the lower electrode support seat 2;

[0091] The second inductive coil 5 is arc-shaped. The distances between each circumferential position of the arc-shaped second inductive coil 5 and the outer peripheral wall of the lower electrode support 2 are equal. The center of curvature of the second inductive coil 5 coincides with the center of curvature of the outer peripheral wall of the lower electrode support 2.

[0092] By arranging the first inductive coil 4 and the second inductive coil 5 with the same curvature and arranging them in parallel and spaced apart, the uniformity of the conductive path is ensured and the uniformity of the plasma electric field around the lower electrode support 2 is improved.

[0093] Optional, please continue to Figure 4 The auxiliary arm 32 is fixedly connected to the first support platform 101 through at least one first fastener 6; the auxiliary arm 32 is fixedly connected to the second support platform 201 through at least one second fastener 7.

[0094] In the present application, the fastening connection between the auxiliary arm 32 and the first support 101 / the second support 201 is achieved by a first fastener 6 and a second fastener 7. The first fastener 6 and the second fastener 7 can be selected by those skilled in the art according to production needs, for example, screws, bolts and other fasteners can be selected;

[0095] The auxiliary arm 32 is fixed to the first support 101 by the first fastener 6, and is fixed to the second support 201 by the second fastener 7, forming a bidirectional anchoring structure, thereby enhancing the stability of the cantilever assembly 3;

[0096] In addition, the first fastener 6 and the second fastener 7 can provide a stable crimping force for the first inductive coil 4 and the second inductive coil 5, ensuring conductive contact between the auxiliary arm 32 and the second support 201 of the lower electrode support seat 2, and between the auxiliary arm 32 and the first support 101 of the process chamber 1.

[0097] Optional, please continue to Figure 4 The second fastener 7 passes through the auxiliary arm 32 along the height direction and is threadedly connected to the second support platform 201. The second fastener 7 is configured to adjust the horizontality of the lower electrode support seat 2 by adjusting the depth of the second fastener 7 screwed into the second support platform 201.

[0098] It is difficult to effectively adjust the levelness of the lower electrode support 2 in the existing technology;

[0099] Different from the prior art, the present application realizes convenient horizontal adjustment through the cooperation between the second fastener 7 and the second support 201: by adjusting the screwing depth of the second fastener 7 in the second support 201, the horizontal adjustment of the lower electrode support seat 2 can be achieved.

[0100] Optionally, at least one first mounting hole 323 and at least one second mounting hole 324 are provided on the auxiliary arm 32 along the height direction. The auxiliary arm 32 is fixed to the first support platform 101 via a first fastener 6 passing through the first mounting hole 323, and the auxiliary arm 32 is fixed to the second support platform 201 via a second fastener 7 passing through the second mounting hole 324.

[0101] Optionally, a first pin hole positioning structure is provided between the first support platform 101 and the auxiliary arm 32;

[0102] The first pin hole positioning structure includes a first positioning pin 1011 and a first positioning hole 325;

[0103] In one embodiment, if Figure 4-5 As shown, a first positioning pin 1011 is provided on the top of the first support platform 101, and a first positioning hole 325 adapted to the first positioning pin 1011 is provided on the bottom of the auxiliary arm 32;

[0104] In another embodiment, a first positioning hole 325 is provided on the top of the first support platform 101 , and a first positioning pin 1011 (not shown) adapted to the first positioning hole 325 is provided on the bottom of the auxiliary arm 32 .

[0105] Optionally, a second pin hole positioning structure is provided between the second support platform 201 and the auxiliary arm 32;

[0106] The second pin hole positioning structure includes a second positioning pin 2011 and a second positioning hole 326;

[0107] In one embodiment, if Figure 4-5 As shown, a second positioning pin 2011 is provided on the top of the second support platform 201, and a second positioning hole 326 adapted to the first positioning pin 1011 is provided on the bottom of the auxiliary arm 32;

[0108] In another embodiment, a second positioning hole 326 is provided on the top of the second support platform 201 , and a second positioning pin 2011 (not shown) adapted to the second positioning hole 326 is provided on the bottom of the auxiliary arm 32 .

[0109] Through the first pin hole positioning structure, the assembly accuracy of the auxiliary arm 32 and the first support 101 can be improved, and through the second pin hole positioning structure, the assembly accuracy of the auxiliary arm 32 and the second support 201 can be improved; through the cooperation of the first pin hole positioning structure and the second pin hole positioning structure, it can be ensured that the lower electrode support seat 2 is collinear with the central axis of the process chamber 1.

[0110] Optionally, the lower electrode support seat 2 further includes a sealing cover plate arranged at the bottom thereof.

[0111] After the sealing cover at the bottom of the lower electrode support seat 2 is removed, the internal components of the lower electrode support seat 2 can be maintained from the bottom, such as the wafer lifting mechanism, helium pipeline, coolant pipeline, temperature measurement component, heating component, RF introduction component, DC introduction component, etc.

[0112] Optional, such as Figure 6 and Figure 8 As shown, the process chamber 1 includes a chamber body 11 and a door assembly 12 , wherein: the chamber body 11 has an opening 111 , and the door assembly 12 is used to cover the opening 111 ;

[0113] like Figure 1 As shown, the lower electrode support 2 is connected to the door assembly 12 via a support arm 31 .

[0114] Since the chamber body 11 has an opening 111 and the lower electrode support 2 is connected to the door assembly 12 via the support arm 31, the lower electrode support 2, the support arm 31, and the door assembly 12 can be moved out of or into the chamber body 11 as a whole, allowing maintenance operations on the lower electrode support 2.

[0115] Furthermore, after the lower electrode support 2 is pulled out of the chamber body 11 , the space above and below the lower electrode support 2 is unobstructed, which facilitates inspection and maintenance of the interior of the lower electrode support 2 .

[0116] Optional, such as Figure 9 As shown, the door assembly 12 includes a door plate 121 and a chamber matching block 122. The chamber matching block 122 is installed on the side of the door plate 121 facing the lower electrode support seat 2. The chamber matching block 122 can be embedded in the opening 111 of the chamber body 11.

[0117] The inner surface of the chamber matching block 122 and the inner wall surface of the chamber body 11 are arc surfaces with the same diameter and are concentric. When the chamber matching block 122 is embedded in the chamber body 11, the inner surface of the chamber matching block 122 and the inner wall surface of the chamber body 11 form a complementary continuous transition surface.

[0118] By forming a complementary continuous transition surface between the inner surface of the chamber matching block 122 and the inner wall surface of the chamber body 11 when the chamber matching block 122 is embedded in the chamber body 11, the uniformity of the flow field in the process chamber 1 can be ensured, thereby improving the uniformity of plasma distribution and the stability of the etching process.

[0119] Optional, please continue to Figure 2 , the number of auxiliary arms 32 is three, and the number of support arms 31 is one;

[0120] One of the auxiliary arms 32 and the support arm 31 extends along a first direction, and the first direction is perpendicular to the door panel 121;

[0121] The other two auxiliary arms 32 extend along a second direction, which is perpendicular to the first direction.

[0122] Optional, please continue to Figure 9 A third inductive coil 8 is provided between the chamber matching block 122 and the door panel 121 , and the chamber matching block 122 is in conductive contact with the door panel 121 through the third inductive coil 8 .

[0123] Optionally, a third pin hole positioning structure is provided between the door plate 121 and the chamber matching block 122;

[0124] The third pin hole positioning structure includes a third positioning pin 1211 and a third positioning hole;

[0125] In one embodiment, if Figure 9 As shown, a third positioning pin 1211 is provided on the side wall of the door panel 121, and a third positioning hole adapted to the third positioning pin 1211 is provided on the side wall of the chamber matching block 122;

[0126] In another embodiment, a third positioning hole is provided on the side wall of the door panel 121 , and a third positioning pin 1211 (not shown) adapted to the third positioning hole is provided on the side wall of the chamber matching block 122 .

[0127] By providing a third pin hole positioning structure between the door panel 121 and the chamber matching block 122 , a minimum fitting clearance can be achieved between the chamber body 11 and the chamber matching block 122 , thereby improving the conformal accuracy and integrity of the chamber surface.

[0128] Optional, such as Figure 9-10 As shown, a first channel 1221 is opened in the middle of the chamber matching block 122 , and the support arm 31 passes through the first channel 1221 and is connected to the door panel 121 .

[0129] Optional, such as Figure 9 As shown, an outer ring sealing ring is provided between the outer edge of the wall of the chamber matching block 122 opposite to the door panel 121 and the door panel 121, and an inner ring sealing ring is provided between the inner edge of the wall of the chamber matching block 122 opposite to the door panel 121 (the inner edge of the chamber matching block 122 is close to the first channel 1221) and the door panel 121.

[0130] Optional, please continue to Figure 10 A fourth inductive coil 9 is provided between the support arm 31 and the door panel 121 , and at least one first sealing ring 10 is provided at the joint surface between the support arm 31 and the door panel 121 .

[0131] By disposing the fourth inductive coil 9 between the support arm 31 and the door panel 121 , the door panel 121 can be conductively connected to the lower electrode support base 2 through the support arm 31 .

[0132] Optionally, a fourth pin hole positioning structure is provided between the door panel 121 and the support arm 31;

[0133] The fourth pin hole positioning structure includes a fourth positioning pin and a fourth positioning hole;

[0134] In one embodiment, a fourth positioning pin is provided on the side wall of the door panel 121, and a fourth positioning hole adapted to the fourth positioning pin is provided at the end of the support arm 31;

[0135] In another embodiment, a fourth positioning hole is provided on the side wall of the door panel 121 , and a fourth positioning pin adapted to the fourth positioning hole is provided on the end of the support arm 31 .

[0136] Optional, such as Figure 8 and Figure 11 As shown, the door assembly 12 includes two guide rods 123 , and the chamber body 11 is provided with guide holes 112 corresponding to the guide rods 123 . Each guide rod 123 is slidably engaged in the corresponding guide hole 112 .

[0137] The sliding interlocking design of the guide rod 123 and the guide hole 112 enables the door assembly 12 to form a drawer-type matching structure with the chamber body 11 through the guide rod 123, ensuring the stability of the movement trajectory of the door assembly 12 during the opening and closing process, avoiding the door assembly 12 from offsetting or shaking during movement, and improving the operating accuracy and reliability of the equipment.

[0138] Optionally, two guide rods 123 are spaced apart and arranged on the door panel 121 , and the two guide rods 123 are parallel to each other.

[0139] Optional, such as Figure 12 As shown, the wafer plasma processing apparatus further includes an adjustment base 11;

[0140] The adjustment base 11 is installed on the top of the process chamber 1 , and a second sealing ring 12 is provided between the bottom surface of the adjustment base 11 and the top surface of the process chamber 1 .

[0141] Optional, please continue to Figure 12 , the wafer plasma processing apparatus further includes an annular liner 13 installed in the process chamber 1 , the annular liner 13 is grounded to the adjustment base 11 ;

[0142] An annular sink 102 extending radially is provided on the inner side of the top wall of the process chamber 1;

[0143] The top of the annular liner 13 is provided with an inner liner flange 131 extending in the radial direction, and the inner liner flange 131 is embedded in the annular sink 102;

[0144] A plasma shielding ring 14 is provided between the top surface of the lining flange 131 and the bottom surface of the adjustment base 11 .

[0145] In the prior art, the bottom surface of the adjustment base 11 abuts against the top surface of the lining flange 131, and the top surface of the process chamber 1 abuts against the bottom surface of the lining flange 131, resulting in two leakage points. Therefore, it is necessary to provide sealing rings between the adjustment base 11 and the lining flange 131, and between the process chamber 1 and the lining flange 131, respectively.

[0146] In the present application, a radially extending annular platform 102 is provided on the inner side of the top cavity wall of the process chamber 1, and the radial extension depth of the annular platform 102 is less than the radial width of the bottom surface of the adjustment base 11, so that the inner side of the bottom surface of the adjustment base 11 is covered on the annular platform 102, and the outer side of the bottom surface of the adjustment base 11 is in contact with the process chamber 1. At this time, only a second sealing ring 12 needs to be set between the adjustment base 11 and the process chamber 1. The lining flange 131 of the annular lining 13 does not need to participate in the sealing, but only participates in the RF grounding. There is no need to set a sealing ring between the lining flange 131 of the annular lining 13 and the process chamber 1, thereby simplifying the sealing structure, reducing the original two leakage points to one, reducing the leakage risk, and improving the sealing reliability of the equipment.

[0147] Optional, please continue to Figure 12 A lining grounding ring 17 is provided between the annular lining 13 and the lower electrode support seat 2 , and the annular lining 13 is grounded to the lower electrode support seat 2 through the lining grounding ring 17 .

[0148] Optional, please continue to Figure 2-3 and Figure 12 The support arm 31 and the n auxiliary arms 32 are located at the same height, and both the support arm 31 and the n auxiliary arms 32 are located below the annular liner 13 .

[0149] Below the annular liner 13 are evenly distributed support arms 31 and auxiliary arms 32, which compensate for the asymmetric structure caused by a single support arm 31; a distance is reserved between the top of the support arm 31 and the auxiliary arm 32 and the annular liner 13, which can reduce the impact of the support arm 31 and the auxiliary arm 32 on the uniformity of the airflow.

[0150] Optional, please continue to Figure 12 An insulating ring 18 is installed on the top of the lower electrode support seat 2, and an electrostatic chuck 19 is installed on the insulating ring 18.

[0151] Optional, please continue to Figure 12, a first step matching structure is provided between the insulating ring 18 and the lower electrode support seat 2;

[0152] The first step matching structure includes an annular groove provided on the inner side of the top of the lower electrode support seat 2, and an annular protrusion provided on the bottom of the insulating ring 18; the annular groove matches the shape of the annular protrusion;

[0153] A second step matching structure is provided between the electrostatic chuck 19 and the insulating ring 18;

[0154] The second step matching structure includes a supporting step, which is provided along the inner peripheral wall of the insulating ring 18 and is annular in shape. The bottom edge of the electrostatic chuck 19 is supported on the supporting step.

[0155] The center of the electrostatic chuck 19 is located on the extension line of the central axis of the lower electrode support seat 2.

[0156] Optionally, the annular liner 13 is a centrosymmetrical radial structure, with grid-like gas channels 1321 evenly distributed along the circumference.

[0157] Optional, please continue to Figure 6-7 and Figure 12 The annular liner 13 includes an air-distributing ring 132.

[0158] The gas uniforming ring 132 is located between the inner peripheral wall of the process chamber 1 and the outer peripheral wall of the insulating ring 18.

[0159] A plurality of radially extending gas channels 1321 are uniformly distributed along the circumference of the gas uniformizing ring 132 .

[0160] In the present application, the uniform air ring 132 is evenly distributed with radial gas channels 1321, and the gas flows into the space below the uniform air ring 132 in the process chamber 11 through each gas channel 1321; the densely distributed gas channels 1321 on the annular lining 13 can block the airflow, buffer and average the pressure difference at various locations, and improve the uniformity of the airflow at various locations in the circumference of the process chamber 11.

[0161] Optional, please continue to Figure 12 A dielectric window 15 is mounted on the adjustment base 11, and a third sealing ring 16 is provided at the junction between the dielectric window 15 and the adjustment base 11;

[0162] The adjustment base 11 has a truncated cone-shaped inner cavity, the cross-sectional area of ​​which gradually increases from top to bottom. The truncated cone-shaped inner cavity has a buffering and amplifying effect, which can guide the airflow to flow smoothly into the process cavity 11, avoid the generation of vortexes in dead corners, and enhance the smoothness of gas flow.

[0163] Optionally, the bottom of the process chamber 1 is designed as a tapered conical structure, with the inner wall surface of the bottom gradually converging toward the central axis from top to bottom, forming a tapered transition surface. The cone angle of this tapered transition surface can be optimized according to process requirements to ensure uniform distribution of airflow in the bottom area. In addition, the arc-shaped conical surface at the bottom of the process chamber 1 cooperates with the sealing cover at the bottom of the lower electrode support 2 to form a homogenized gas channel, optimizing the flow of gas within the process chamber 1.

[0164] It should be noted that, in this document, relational terms such as first and second are used solely to distinguish one entity or operation from another, and do not necessarily require or imply any actual relationship or order between these entities or operations. Furthermore, the terms "comprise," "include," or any other variations thereof are intended to encompass non-exclusive inclusion, such that a process, method, article, or device comprising a series of elements includes not only those elements but also other elements not explicitly listed, or elements inherent to such process, method, article, or device. Without further limitation, an element defined by the phrase "comprising a..." does not preclude the presence of other identical elements in the process, method, article, or device comprising the element. Furthermore, the term "connected" herein refers to a direct connection between A and B, or an indirect connection between A and B, such as through C, or even through more components such as C and D. The connection between A and B can be integral or separate, removable, or fixed. The term "optional" herein refers to a technical feature that can be combined or not combined with any other feature herein.

[0165] Although the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description is not intended to limit the present invention. After reading the above description, various modifications and substitutions of the present invention will become apparent to those skilled in the art. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A wafer plasma processing device, characterized in that: include: The process chamber has an inner wall with n first supports extending radially, where n≥1; A lower electrode support seat is located inside the process chamber, and its outer wall is radially extended with n second support platforms corresponding to each of the first support platforms, and each of the second support platforms is arranged opposite to the corresponding first support platform; A cantilever assembly comprising one support arm and n auxiliary arms uniformly spaced circumferentially around the lower electrode support seat; The lower electrode support seat is connected to the process chamber through the support arm, and each pair of the first support platform and the second support platform arranged opposite to each other cooperates to support an auxiliary arm.

2. The wafer plasma processing apparatus according to claim 1, wherein: Each of the auxiliary arms is a solid arm; The support arm includes a solid portion and a channel portion, the solid portion is arranged around the channel portion, and the channel portion is a line channel.

3. The wafer plasma processing apparatus according to claim 1, wherein: A conductive path is formed between the lower electrode support and the process chamber, and the conductive path sequentially includes: The second support platform, a second inductive coil provided between the auxiliary arm and the second support platform, the auxiliary arm, a first inductive coil provided between the auxiliary arm and the first support platform, and the first support platform.

4. The wafer plasma processing apparatus according to claim 1, wherein: The auxiliary arm is fixedly connected to the first support platform through at least one first fastener; The auxiliary arm is fixedly connected to the second support platform through at least one second fastener.

5. The wafer plasma processing apparatus according to claim 4, wherein: The second fastener passes through the auxiliary arm in the height direction and is then threadedly connected to the second support platform. The second fastener is configured to adjust the levelness of the lower electrode support seat by adjusting the depth of the second fastener screwed into the second platform.

6. The wafer plasma processing apparatus according to claim 1, wherein: The process chamber comprises a chamber body and a door assembly, wherein: The chamber body has an opening, The door assembly is used to cover the opening, and the lower electrode support seat is connected to the door assembly through the support arm.

7. The wafer plasma processing apparatus according to claim 6, wherein: The door assembly includes a door plate and a chamber matching block, wherein the chamber matching block is installed on a side of the door plate facing the lower electrode support seat, and the chamber matching block can be embedded in the opening of the chamber body; The inner surface of the chamber matching block and the inner wall surface of the chamber body are arc surfaces with the same diameter and are concentric. When the chamber matching block is embedded in the chamber body, the inner surface of the chamber matching block and the inner wall surface of the chamber body form a complementary continuous transition curved surface.

8. The wafer plasma processing apparatus according to claim 7, wherein: A third inductive coil is provided between the chamber matching block and the door panel.

9. The wafer plasma processing apparatus according to claim 7, wherein: A first channel is opened in the middle of the chamber matching block, and the support arm passes through the first channel and is connected to the door panel.

10. The wafer plasma processing apparatus according to claim 7, wherein: A fourth inductive coil is provided between the support arm and the door panel, and at least one first sealing ring is provided at the joint surface between the support arm and the door panel.

11. The wafer plasma processing apparatus according to claim 6, wherein: The door assembly includes two guide rods. The chamber body is provided with guide holes corresponding to the guide rods one by one. Each guide rod can be slidably engaged in the corresponding guide hole.

12. The wafer plasma processing apparatus according to claim 1, wherein: The wafer plasma processing device further includes an adjustment base; The adjustment base is mounted on the top of the process chamber, and a second sealing ring is provided between the bottom surface of the adjustment base and the top surface of the process chamber.

13. The wafer plasma processing apparatus according to claim 12, wherein: The wafer plasma processing apparatus further includes an annular liner installed in the process chamber; An annular sink extending in the radial direction is provided on the inner side of the top cavity wall of the process cavity; The top end of the annular liner is provided with an inner liner flange extending in the radial direction, and the inner liner flange is embedded in the annular sink; A plasma shielding ring is provided between the top surface of the lining flange and the bottom surface of the adjustment base.

14. The wafer plasma processing apparatus according to claim 13, wherein: The wafer plasma processing device further includes a dielectric window mounted on the adjustment base; A third sealing ring is provided at the junction between the medium window and the adjustment base; The adjustment base has a truncated cone-shaped inner cavity, and the cross-sectional area of ​​the truncated cone-shaped inner cavity gradually increases from top to bottom.

15. The wafer plasma processing apparatus according to claim 13, wherein: A lining grounding ring is provided between the annular lining and the lower electrode support seat, and the annular lining is grounded to the lower electrode support seat through the lining grounding ring.

16. The wafer plasma processing apparatus according to claim 13, wherein: The support arm and the n auxiliary arms are located at the same height, and the support arm and the n auxiliary arms are all located below the annular liner.

17. The wafer plasma processing apparatus according to claim 1, wherein: The wafer plasma processing apparatus further includes an insulating ring and an electrostatic chuck; The insulating ring is mounted on the top of the lower electrode support seat, and the electrostatic chuck is mounted on the insulating ring.

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